TW201718776A - 用於製備半導體封裝件的填料組合物及包括其之底膠組合物及模製化合物 - Google Patents

用於製備半導體封裝件的填料組合物及包括其之底膠組合物及模製化合物 Download PDF

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TW201718776A
TW201718776A TW105104135A TW105104135A TW201718776A TW 201718776 A TW201718776 A TW 201718776A TW 105104135 A TW105104135 A TW 105104135A TW 105104135 A TW105104135 A TW 105104135A TW 201718776 A TW201718776 A TW 201718776A
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TWI778936B (zh
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謝雅玉
林弘萍
陳道隆
楊秉豐
施孟鎧
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日月光半導體製造股份有限公司
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    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
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Abstract

本案係關於用於半導體封裝件的填料組合物。該填料組合物包含碳及二氧化矽。

Description

用於製備半導體封裝件的填料組合物及包括其之底膠組合物及模製化合物
本案係關於用於製備半導體封裝件的填料組合物及包括其之底膠組合物及模製化合物，該等半導體封裝件諸如覆晶型半導體封裝件或引線接合型半導體封裝件。
隨著半導體產業持續積極地對電路尺寸進行微型化，係發展出低介電常數(低K)材料以減少積體電路中金屬層之電容效應。然而，低K材料在製造及封裝上具有挑戰。半導體封裝之耐久度及可靠度可能會因在半導體元件中使用低K材料而受到損害，因為其可能會在效能上產生差異，例如在熱膨脹係數、與鄰近層之間的黏著力、機械強度、導熱率及吸濕性上。
當將具有不同熱膨脹係數之材料層結合在一起時，該等層會以不同的速率膨脹及收縮，因此會在鄰近及相鄰的層中產生應變。因此，因半導體元件包含低K材料層、底膠組合物、模製化合物或與半導體元件緊密接觸之其他材料等多種不同材料，具有低K層之半導體元件會更容易發生剝離的現象。此外，因為低K材料層之脆性，低K材料層之機械強度大體上係低的，而含有低K材料之介電層之半導體 元件因此便容易在涉及與半導體元件表面進行實體接觸之製程(諸如引線接合及晶圓探測)或導致彎曲應力之製程(諸如模製及底膠固化、焊球回焊及溫度循環)過程中斷裂或開裂。
鑒於以上，便需要一種適用於先進應用之半導體封裝材料(諸如適用於底膠組合物、模製化合物、黏著劑、或與半導體元件緊密接觸的其他材料的填料組合物)以減少晶粒應力、減少低K材料(諸如低K矽)中之內層剝離或減少晶粒焊接點上的應變。
本案一些實施例的一方面係關於用於半導體封裝的填料組合物，其中該填料組合物包括碳及二氧化矽。
本案一些實施例的另一方面係關於用於半導體封裝的底膠組合物、模製化合物及黏著劑。底膠組合物、模製化合物及黏著劑包括上述填料組合物。
本案一些實施例的另一方面係關於用於製備用於半導體封裝的填料組合物的方法，該方法包括：(a)組合植物岩與溶劑以形成分散液；(b)調節該分散液之pH值以形成酸性分散液；(c)對該酸性分散液進行熱處理；及(d)在還原環境中煅燒該酸性分散液之至少一部分以形成填料組合物。
本案一些實施例的另一方面係關於包括上述底膠組合物、模製化合物或黏著劑的半導體封裝件。
102‧‧‧底膠組合物
104‧‧‧晶粒
106‧‧‧焊料凸塊
108‧‧‧半導體結構
204‧‧‧晶粒
208‧‧‧囊封劑
210‧‧‧黏著劑
212‧‧‧襯墊
圖1係關於本案一實施例之覆晶型半導體封裝件之剖面圖。
圖2係關於本案一實施例之引線接合型半導體封裝之剖面圖。
根據本案之一些實施例，本案之填料組合物包括碳及二氧化矽。在一些實施例中，碳可呈元素形式，但在一些實施例中，其亦涵 蓋含碳化合物之情況。在一些實施例中，二氧化矽可表示為SiO2，其可為非晶形、結晶狀、或非晶相與結晶相的組合。
碳可自有機材料、無機材料或其混合物獲得。有機材料可自自然資源獲得，包括(但不限於)植物岩、煤、泥炭、石油、甲烷氣水包合物(methane clathrates)或其混合物；或自自然廢物獲得，諸如植被。無機材料可包括(但不限於)石灰石、白雲石、二氧化碳或其混合物。
二氧化矽可自有機材料、無機材料或其混合物獲得。有機材料可包括(但不限於)植物岩。在一或多個實施例中，植物岩可自穀物殼、稻桿或其混合物獲得。穀物殼可包括(但不限於)稻殼、椰子殼或其混合物。無機材料可包括(但不限於)沙、土或其混合物。
在一或多個實施例中，碳及二氧化矽係自相同來源獲得。舉例而言，碳及二氧化矽可自植物岩獲得，植物岩諸如穀物殼、稻桿或其混合物。在一或多個實施例中，碳及二氧化矽自稻殼、椰子殼或其混合物獲得。藉由自與用於提供二氧化矽之相同來源提供碳，可降低或消除用於提供碳的相關成本(諸如用於提供原材料的成本及用於處理材料的成本)。
另外，藉由自自然資源(諸如植物岩)或自自然廢物提供碳及二氧化矽，可降低或消除其相關成本(諸如開採或提供碳及二氧化矽之原材料的成本及用於處理材料的成本)。此外，由於可由自諸如植物岩之自然資源獲得的碳及二氧化矽生產填料組合物，該填料組合物之製造係對環境友善，此係因為與填料組合物之習知製造程序相比，其產生較低之碳排放量。
另外，一些實施例之填料組合物可影響被該填料組合物添加至之組合物的熱膨脹係數(CTE)及楊氏模數(Young's modulus)。已發現，藉由將填料組合物添加至底膠組合物，或晶粒與待與晶粒配對的 半導體結構(諸如基板、插入件或封裝件)之間的黏著劑，或添加至用以包覆晶粒的模製化合物，可降低該底膠組合物、黏著劑或模製化合物的CTE及楊氏模數，藉此可減少晶粒上的應力及所得到之半導體封裝件之彎曲。在一些實施例中，在低於玻璃轉移溫度Tg時，底膠組合物、黏著劑或模製化合物的CTE可為約54ppm/℃或更小、約50ppm/℃或更小、約45ppm/℃或更小、約40ppm/℃或更小、約35ppm/℃或更小或約32ppm/℃或更小，且在低於玻璃轉移溫度Tg時，底膠組合物、黏著劑或模製化合物的楊氏模數可為約6.5GPa或更小、約6.1GPa或更小、約5.5GPa或更小、約5GPa或更小、約4.5GPa或更小、約4GPa或更小、約3.8GPa或更小或約3.6GPa或更小。此外，根據一些實施例，底膠組合物、黏著劑或模製化合物可具有較高之導導熱率，諸如導熱率為約0.2W/mK或更大、約0.25W/mK或更大、約0.3W/mK或更大、約0.35W/mK或更大、約0.4W/mK或更大、約0.45W/mK或更大、約0.5W/mK或更大或約0.55W/mK或更大。
在一些實施例中，用於製備填料組合物之方法包括：(a)組合植物岩與溶劑以形成分散液；(b)調節分散液之pH值以形成酸性分散液；(c)對該酸性分散液進行熱處理；及(d)在還原環境中煅燒該酸性分散液之至少一部分以形成填料組合物。
在一些實施例中，(a)中之植物岩可自穀物殼、稻桿或其混合物獲得，且(a)中之溶劑可為無機溶劑(諸如水)或有機溶劑(諸如質子或非質子極性有機溶劑)。在一些實施例中，(b)中之酸性分散液可具有小於約7的pH值，pH值諸如約6.5或更小、約6或更小、約5.5或更小、約5或更小、約4.5或更小或約4或更小。在一些實施例中，(c)中之熱處理可包括在約50℃至約200℃或約80℃至約150℃之範圍內的溫度，利用水熱處理方法約0.5小時至約4小時或約1小時至約3小時。在一些實施例中，可在約600℃至約1000℃或約700℃至約900℃之範圍內的 溫度處施加(d)中之煅燒，且還原環境可為氮氣環境或實質上不含氧氣使得氧氣量小於約5重量%或小於約1重量%的其他環境。
在一些實施例中，填料組合物中碳的量至少約為填料組合物之5重量%，諸如為該組合物之重量的約8%或更多、約10%或更多、約15%或更多、約20%或更多、約25%或更多或約30%或更多。舉例而言，填料組合物中碳的量可為組合物之約30至約85重量%、約40至約75重量%或約48至約70重量%。
在一些實施例中，填料組合物中二氧化矽之量至少為填料組合物的約5重量%且可高達填料組合物的約95重量%，諸如高達組合物之約92重量%、高達約90重量%、高達約85重量%、高達約80重量%、高達約75重量%或高達約70重量%。舉例而言，填料組合物中二氧化矽的量可為組合物之約15至約70重量%、約25至約60重量%或約30至約52重量%。
在一或多個實施例中，填料組合物中碳與二氧化矽之量的比率(重量)為自約0.4至約5.7，諸如自約0.6至約3.0或自約0.9至約2.3。在一或多個實施例中，填料組合物中碳與二氧化矽之量的比率(重量)至少為約0.05，諸如約0.1或更多、約0.15或更多、約0.2或更多、約0.25或更多、約0.3或更多、約0.35或更多或約0.4或更多，且可高達或小於約1，或可大於約1，諸如高達約2.3或更多、高達約3或更多或高達約5.7或更多。
在一或多個實施例中，填料組合物可實質上不含氧化鋁，以使得填料組合物中氧化鋁的量小於填料組合物的約5重量%，諸如小於組合物的約1重量%。在一或多個實施例中，填料組合物可實質上不含碳化矽(SiC)，以使得填料組合物中之SiC的量小於填料組合物的約5重量%，諸如小於組合物的約1重量%.
在一或多個實施例中，填料組合物可由微粒組成或可基本上由 微粒組成，該等微粒的粒徑(例如直徑)為約50μm或更小、約40μm或更小、約30μm或更小、約1μm或更小或約0.1μm或更小，或粒徑為約0.1μm至約50μm、約0.2μm至約40μm或約0.5μm至約30μm。在一或多個實施例中，填料組合物中微粒的中間值尺寸(按體積或重量計)可為約50μm或更小、約40μm或更小、約30μm或更小、約1μm或更小或約0.1μm或更小，或可介於約0.1μm至約50μm、約0.2μm至約40μm或約0.5μm至約30μm的範圍內。在一或多個實施例中，填料組合物中之微粒可由碳與二氧化矽兩者組成，且在一或多個其他實施例中，填料組合物可包括主要由碳組成的第一微粒群體及主要由二氧化矽組成的第二微粒群體。
參照圖1之半導體封裝件的實施例，底膠組合物102係被導入以填充晶粒104、焊料凸塊106與半導體結構108之間的間隙，以防止封裝件中晶粒與半導體結構界面應力及焊料凸塊應變所導致的焊料凸塊106之裂開或錯位。在一或多個實施例中，底膠組合物102包括基底材料及根據本案實施例的填料組合物。
基底材料可包括環氧樹脂組份。在一或多個實施例中，環氧樹脂組份可包括一或多種基於雙酚之環氧樹脂。此等基於雙酚的環氧樹脂可選自雙酚A環氧樹脂、雙酚F環氧樹脂、雙酚S環氧樹脂及其組合。在一或多個實施例中，此等雙酚為主的環氧樹脂可為矽烷改質環氧樹脂。除了此等雙酚為主的環氧樹脂之外或替代此等雙酚為主的環氧樹脂，其他環氧樹脂化合物亦可被包括作為環氧樹脂組份。舉例而言，可使用環脂族環氧樹脂，諸如3,4-環氧環己基甲基-3,4-環氧環己基碳酸酯。另外，視需要，可包括用以調整黏度抑或降低Tg或調整黏度與降低Tg兩者之單官能、雙官能或多官能反應性稀釋劑，諸如選自丁基縮水甘油醚、甲苯基縮水甘油醚、聚乙二醇縮水甘油醚、聚丙二醇縮水甘油醚或其組合的醚類。
舉例而言，底膠組合物102可包括硬化劑作為基底材料的一部分。可使用氰酸酯、芳香族胺或酸酐。在一或多個實施例中，硬化劑為酸酐。
舉例而言，底膠組合物102可包括催化劑作為基底材料的一部分。取決於希望固化發生之溫度，許多不同材料可用作催化劑。舉例而言，為了在約120℃至約175℃的溫度達成固化，催化劑可為胺類。
在一或多個實施例中，底膠組合物102可進一步包括矽烷偶合劑以改良環氧樹脂組份與填料組合物之間的相容性。矽烷偶合劑可為(但不限於)3-胺基丙基三乙氧基矽烷(APTES)、3-縮水甘油氧基丙基三乙氧基矽烷(GPTES)或其組合。可藉由施加電磁輻射來處理填料組合物，以替代矽烷偶合劑或與矽烷偶合劑組合，電磁輻射諸如在約300W至約1200W或約500W至約900W之功率位準處進行一或多次的微波輻射，每一次處理的持續時間約為30秒至約150秒。
在一或多個實施例中，底膠組合物102可包括約20至約80重量%之填料組合物、約30至約70重量%之填料組合物或約45至約65重量%之填料組合物。
在一或多個實施例中，底膠組合物102中環氧樹脂組份的量可為底膠組合物102的約20至約80重量%、約30至約70重量%、約25至約50重量%或約35至約55重量%。
在一或多個實施例中，基底材料中硬化劑的量可為環氧樹脂組份的約3至約9重量%、約13至約31重量%或約16至約24重量%。在一或多個實施例中，底膠組合物102中硬化劑的量可為底膠組合物102的約10至約40重量%、約15至約35重量%或約20至約30重量%。
在一或多個實施例中，基底材料中催化劑的量可為底膠組合物102的約0.05至約1重量%。
在一或多個實施例中，矽烷偶合劑可以底膠組合物102之約1至 約5重量%的量存在於該底膠組合物102中。
參照圖2之半導體封裝件的實施例，模製化合物係用於覆蓋或囊封晶粒204以形成密封件208，以保護晶粒204免受外部環境的不利影響。在一或多個實施例中，模製化合物包括基底材料及根據本案之實施例的填料組合物。
用於模製化合物中之基底材料及填料組合物可與根據圖1之底膠組合物102所描述的彼等材料相似。在一或多個實施例中，模製化合物可包括約60至約95重量%之填料組合物、約65至約90重量%之填料組合物或約70至約85重量%之填料組合物。模製化合物中環氧樹脂組份的量可為模製化合物之約5至約40重量%、約10至約35重量%或約15至約30重量%。
在一或多個實施例中，根據本案實施例的填料組合物亦可包括於圖2所說明之用於將晶粒204安置於襯墊212上的黏著劑210中。用於黏著劑210中之填料組合物及基底材料可相似於用於圖1之底膠組合物102或圖2之模製化合物中的彼等材料。黏著劑210可包括約20至約80重量%之填料組合物、約30至約70重量%之填料組合物或約45至約65重量%之填料組合物。
實例
以下實例描述本案一些實施例的特定方面，以向一般熟習此項技術者說明且提供敘述。該等實例不應解釋為限制本案，因為該等實例僅提供用於理解且實踐本案之一些實施例的特定方法。
實例1
填料組合物係由先將植物岩(臺灣稻殼)分散於溶劑(水)中開始製備。稻殼溶液的pH值係經調節以變成酸性。接著，該溶液係藉由在烘箱中進行約2小時之水熱處理，在約100℃下加熱。在此之後，該溶液係用去離子水進行洗滌且接著在約100℃下進行脫水。該溶液接著 在約800℃且在氮氣或實質上不含氧氣之環境下進行煅燒，接著可獲得填料組合物。該填料組合物可進一步由球磨機或行星球磨研磨機進行研磨以形成微粒，該等微粒具有小於約1μm或小於約0.1μm的直徑或約0.1μm至約50μm的直徑。所得填料組合物的碳與二氧化矽的(重量)比率為約1.5至約2.0。
實例2
填料組合物係由類似於實例1中所描述之程序所製備，但係使用日本稻殼而非臺灣稻殼。所得填料組合物的碳與二氧化矽之(重量)比率為約0.9至1.0。
實例3
根據以下之程序製備底膠組合物。加熱環氧樹脂組份(諸如雙酚A)。接著，將根據實例1或實例2之填料組合物以組合物的約17重量%之量添加至經加熱之環氧樹脂組份，接著在約95℃下將其混合歷時約8小時。在此之後，將硬化劑(酸酐)添加至混合物，其在約60℃下進行混合。環氧樹脂組份與酸酐的(重量)比約為1：0.8。接著，將適合量之催化劑添加至混合物，其在約60℃下進行混合。在混合後，可獲得底膠組合物。
實例4
此實例中用於製備底膠組合物之程序類似於實例3中所描述的程序，但是將根據實例1或實例2之填料組合物以組合物之約20重量%之量添加至經加熱的環氧樹脂組份。
實例5
此實例中用於製備底膠組合物之程序類似於實例3中所描述的程序，但是將根據實例1或實例2之填料組合物以組合物之約29重量%之量添加至經加熱的環氧樹脂組份。
實例6
此實例中用於製備底膠組合物之程序類似於實例3中所描述的程序，但是將根據實例1或實例2之填料組合物以組合物之約31重量%之量添加至經加熱的環氧樹脂組份。
實例7
此實例中用於製備底膠組合物之程序類似於實例3中所描述的程序，但是將根據實例1或實例2之填料組合物以組合物之約39重量%之量添加至經加熱的環氧樹脂組份。
實例8
此實例中用於製備底膠組合物之程序類似於實例3中所描述的程序，但是將根據實例1或實例2之填料組合物以組合物之約43重量%之量添加至經加熱的環氧樹脂組份。
實例9
此實例中用於製備底膠組合物之程序類似於實例3中所描述的程序，但是將根據實例1或實例2之填料組合物以組合物之約46重量%之量添加至經加熱的環氧樹脂組份。
實例10
此實例中用於製備底膠組合物之程序類似於實例7中所描述的程序，但是在約700W下對實例1之填料組合物進行一次約90秒的微波處理。
實例11
此實例中用於製備底膠組合物之程序類似於實例7中所描述的程序，但是在約700W下對實例1之填料組合物進行兩次約90秒的微波處理。
實例12
此實例中用於製備底膠組合物之程序類似於實例7中所描述的程序，但是在約700W下對實例1之填料組合物進行三次約90秒的微波處理。
實例13
此實例中用於製備底膠組合物之程序類似於實例7中所描述的程序，但是在約700W下對實例1之填料組合物進行四次約90秒的微波處理。
實例14
此實例中用於製備底膠組合物之程序類似於實例7中所描述的程序，但是矽烷偶合劑(3-胺基丙基三乙氧基矽烷(APTES))係添加至底膠組合物。
實例15
此實例中用於製備底膠組合物之程序類似於實例7中所描述的程序，但是矽烷偶合劑(3-縮水甘油氧基丙基三乙氧基矽烷(GPTES))係添加至底膠組合物。
在以下表1及表2中闡述實例3至實例15之底膠組合物之組份細節。
在以下表3及表4中闡述實例3至實例15之底膠組合物的物理性質。在以下表中，TMA表示熱機械分析。
在以下表5中闡述比較實例1至7之底膠組合物之組份的細節及其物理性質。
在以下表6中闡述比較實例1及2與實例14及15的彎曲評估結果。
在以下表7中闡述比較實例1及3與實例14之額外低K(ELK)應力評 估結果。
根據表3及表4中所示之物理性質可觀測到，包括根據本案之實例之填料組合物的底膠組合物在低於Tg時，可具有小於約6.1GPa的楊氏模數，且可低至約3.63GPa(實例3)。另外，包括根據本案之實例之填料組合物的底膠組合物可具有至少為約0.22W/mK的導熱率(實例4)，且可高達約0.55W/mK(實例14)。此外，其可發現，包括根據本案之實例之填料組合物的底膠組合物可在達成上述之有利性質的同時，CTE1值可保持在約32.17ppm/℃至約53.05ppm/℃之範圍中。
將表5中所示之比較實例1至7的物理性質與表3及表4中所示之實例3至實例15的物理性質進行比較。根據該比較可觀察到，包括根據本案之實例的環境友善及具成本效益之填料組合物的底膠組合物將不會損害其在低於Tg時的楊氏模數及CTE 1值。相反地，一些實例(諸如實例3)在低於Tg時可產生較低楊氏模數，且同時CTE 1值可保持在約32.17ppm/℃至約53.05ppm/℃之範圍中。此外，根據該比較，一些實例(諸如實例12至實例15)可具有較高之導熱率。
根據表6中所示之比較實例1及2與實例14及15的彎曲評估結果，可觀察到，藉由根據本案之環境友善及具成本效益之填料組合物替換習知填料組合物的底膠組合物將不會損害其用於覆晶型晶圓尺寸封裝(FCCSP)及覆晶型球狀柵格陣列封裝時的彎曲表現。相反地，一些實例(諸如FCCSP之實例)展示了在減少彎曲方面的改良。
根據表7中所示之比較實例1及3與實例14的ELK評估結果，可觀察到，藉由根據本案的環境友善及具成本效益之填料組合物替換習知 填料組合物的底膠組合物將不會損害其低K應力表現，而是可實際上改良其表現。
如本文中所使用且未以其他方式定義，術語「約」用於描述且解釋較小變化。當結合數值使用時，該術語可指數值精確出現的情況以及數值非常近似地出現的情況。舉例而言，當結合數值使用時，該術語可指小於或等於彼數值之±10%的變化範圍，諸如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%。作為另一實例，若兩個數值(諸如表徵某個量)之間的差小於或等於平均值的±10%(諸如小於或等於±5%、小於或等於±4%、小於或等於±3%、小於或等於±2%、小於或等於±1%、小於或等於±0.5%、小於或等於±0.1%、或小於或等於±0.05%)，則該等數值可約相同或匹配。
如本文中所使用，術語「尺寸」指物件的特性維度。因此，例如，球形物件的尺寸可指物件的直徑。在非球形物件的情況下，物件的尺寸可指對應球形物件的直徑，其中對應的球形物件呈現或具有實質上與非球形物件之彼等特性相同的可導出或可量測特性的特定集合。替代地或相結合地，非球形物件的尺寸可指物件之各種正交維度的平均值。當將一組物件稱為具有特定尺寸，預期該等物件可具有圍繞特定尺寸的尺寸分佈。因此，如本文中所使用，一組物件的尺寸可指尺寸分佈的典型尺寸，諸如平均尺寸、中間值尺寸或峰值尺寸。
雖然已參考本案的特定實施例描述並說明本發明，但此等描述及說明並不限制本發明。熟習此項技術者應理解，在不脫離如由所附申請專利範圍界定的本發明之真實精神及範疇的情況下，可作出各種改變且可取代等效物。說明可不一定按比例繪製。歸因於製造程序及容限，本案中之藝術再現與實際裝置之間可存在區別。可存在並未特定 說明之本案的其他實施例。應將本說明書及圖式視為說明性而非限制性的。可做出修改，以使特定情形、材料、物質組成、程序(process,or process)適應於本案之目標、精神及範疇。所有此等修改意欲在所附之申請專利範圍之範疇內。雖然已參考按特定次序執行之特定操作描述本文中所揭示的程序，但應理解，在不脫離本案之教示的情況下，可組合、再分、或重新定序此等操作以形成等效程序。因此，除非本文中特定指示，否則操作的次序及分組並不限制本發明。
102‧‧‧底膠組合物
104‧‧‧晶粒
106‧‧‧焊料凸塊
108‧‧‧半導體結構

Claims (14)

  1. 一種用於半導體封裝件之填料組合物，其包含碳及二氧化矽。
  2. 如請求項1之填料組合物，其中該填料組合物中碳的量至少為該填料組合物的5重量%。
  3. 如請求項1之填料組合物，其中該填料組合物中碳的量在該填料組合物之30至85重量%的範圍內。
  4. 如請求項1之填料組合物，其中該填料組合物中二氧化矽的量至少為該填料組合物的5重量%且可高達該填料組合物的95重量%。
  5. 如請求項1之填料組合物，其中該填料組合物中碳與二氧化矽之量的重量比率為至少0.05。
  6. 如請求項1之填料組合物，其中該填料組合物包括具有按重量計，中間值尺寸在0.1μm至50μm的範圍內的微粒。
  7. 一種用於半導體封裝件之底膠組合物，其包含：基底材料；及如請求項1之填料組合物。
  8. 如請求項7之底膠組合物，其中該基底材料包括環氧樹脂組份。
  9. 如請求項7之底膠組合物，其進一步包含矽烷偶合劑。
  10. 如請求項9之底膠組合物，其中該矽烷偶合劑係選自3-胺基丙基三乙氧基矽烷及3-縮水甘油氧基丙基三乙氧基矽烷。
  11. 一種用於半導體封裝件之模製化合物，其包含：基底材料；及如請求項1之填料組合物。
  12. 一種用於半導體封裝件之黏著劑，其包含：基底材料；及 如請求項1之填料組合物。
  13. 一種用於製備用於半導體封裝的填料組合物之方法，該方法包含：(a)組合植物岩與溶劑以形成分散液；(b)調節該分散液之pH值以形成酸性分散液；(c)對該酸性分散液進行熱處理；及(d)在還原環境中煅燒該酸性分散液之至少一部分以形成該填料組合物。
  14. 如請求項13之方法，其中該植物岩係選自穀物殼、稻桿及其混合物。
TW105104135A 2015-11-17 2016-02-05 用於製備半導體封裝件的填料組合物及包括其之底膠組合物及模製化合物 TWI778936B (zh)

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