TW201717215A - Electrically conductive material, and connecting structure - Google Patents

Electrically conductive material, and connecting structure Download PDF

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Publication number
TW201717215A
TW201717215A TW105125970A TW105125970A TW201717215A TW 201717215 A TW201717215 A TW 201717215A TW 105125970 A TW105125970 A TW 105125970A TW 105125970 A TW105125970 A TW 105125970A TW 201717215 A TW201717215 A TW 201717215A
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solder
electrode
particles
conductive
conductive material
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TW105125970A
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Chinese (zh)
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Takashi Kubota
Hideyuki Takahashi
Keizo Nishioka
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Sekisui Chemical Co Ltd
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Publication of TW201717215A publication Critical patent/TW201717215A/en

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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G75/00Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
    • C08G75/02Polythioethers
    • C08G75/06Polythioethers from cyclic thioethers
    • C08G75/08Polythioethers from cyclic thioethers from thiiranes
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/16Nitrogen-containing compounds
    • C08K5/29Compounds containing one or more carbon-to-nitrogen double bonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02Soldered or welded connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Epoxy Resins (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)

Abstract

Provided is an electrically conductive material in which a hardened material has excellent transparency, and in which the hardened material has excellent heat resistance and is therefore resistant to discoloration. The electrically conductive material according to the present invention includes: a plurality of electrically conductive particles comprising solder on an outer surface part of an electrically conductive part; a thermosetting compound; and a thermosetting agent. The thermosetting compound includes thermosetting compounds comprising a thiirane group and a triazine skeleton.

Description

導電材料及連接構造體 Conductive material and connection structure

本發明係關於一種包含具有焊料之導電性粒子之導電材料。又,本發明係關於一種使用上述導電材料之連接構造體。 The present invention relates to a conductive material comprising conductive particles having solder. Further, the present invention relates to a connection structure using the above conductive material.

各向異性導電膏及各向異性導電膜等各向異性導電材料廣為人知。上述各向異性導電材料中,於黏合劑中分散有導電性粒子。 Anisotropic conductive materials such as anisotropic conductive pastes and anisotropic conductive films are widely known. In the anisotropic conductive material, conductive particles are dispersed in the binder.

為了獲得各種連接構造體,上述各向異性導電材料例如用於軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、以及軟性印刷基板與玻璃環氧基板之連接(FOB(Film on Board,鍍膜板))等。 In order to obtain various connection structures, the anisotropic conductive material is used, for example, for connection between a flexible printed substrate and a glass substrate (FOG (Film on Glass)), and connection between a semiconductor wafer and a flexible printed substrate (COF (Chip on Film) , film over-molding)), connection between a semiconductor wafer and a glass substrate (COG (Chip on Glass)), and connection between a flexible printed substrate and a glass epoxy substrate (FOB (Film on Board)) .

於利用上述各向異性導電材料例如將軟性印刷基板之電極與玻璃環氧基板之電極電性連接時,將包含導電性粒子之各向異性導電材料配置於玻璃環氧基板上。其次,積層軟性印刷基板,並進行加熱及加壓。藉此,使各向異性導電材料硬化,並經由導電性粒子將電極間電性連接而獲得連接構造體。 When the electrode of the flexible printed circuit board and the electrode of the glass epoxy substrate are electrically connected by the anisotropic conductive material, for example, the anisotropic conductive material containing the conductive particles is placed on the glass epoxy substrate. Next, a flexible printed circuit board is laminated and heated and pressurized. Thereby, the anisotropic conductive material is cured, and the electrodes are electrically connected to each other via the conductive particles to obtain a bonded structure.

作為上述各向異性導電材料之一例,於下述專利文獻1中記載有如下各向異性導電材料,其包含導電性粒子與於該導電性粒子之熔點下不會結束硬化之樹脂成分。作為上述導電性粒子,具體而言,可列舉:錫(Sn)、銦(In)、鉍(Bi)、銀(Ag)、銅(Cu)、鋅(Zn)、鉛(Pb)、鎘 (Cd)、鎵(Ga)、銀(Ag)及鉈(Tl)等金屬、或該等金屬之合金。 In the following Patent Document 1, an anisotropic conductive material containing conductive particles and a resin component that does not end harden at the melting point of the conductive particles is described in Patent Document 1 below. Specific examples of the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), and cadmium. Metals such as (Cd), gallium (Ga), silver (Ag), and tantalum (Tl), or alloys of such metals.

於專利文獻1中,記載有經過將各向異性導電樹脂加熱至高於上述導電性粒子之熔點且上述樹脂成分之硬化不會結束之溫度之樹脂加熱步驟、及使上述樹脂成分硬化之樹脂成分硬化步驟,將電極間電性連接。又,於專利文獻1中,記載有以專利文獻1之圖8所示之溫度分佈進行安裝。於專利文獻1中,於在將各向異性導電樹脂加熱之溫度下不會結束硬化之樹脂成分內,導電性粒子發生熔融。 Patent Document 1 describes a resin heating step in which an anisotropic conductive resin is heated to a temperature higher than a melting point of the conductive particles and the curing of the resin component is not completed, and a resin component which hardens the resin component is hardened. In the step, the electrodes are electrically connected. Moreover, in Patent Document 1, it is described that the temperature distribution shown in FIG. 8 of Patent Document 1 is attached. In Patent Document 1, the conductive particles are melted in the resin component which does not end the curing at the temperature at which the anisotropic conductive resin is heated.

於下述專利文獻2中揭示有如下膠帶,其包含含有熱硬化性樹脂之樹脂層、焊料粉、及硬化劑,且上述焊料粉與上述硬化劑存在於上述樹脂層中。該膠帶為膜狀而並非膏狀。 Patent Document 2 discloses an adhesive tape including a resin layer containing a thermosetting resin, a solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. The tape is in the form of a film and is not in the form of a paste.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2004-260131號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-260131

[專利文獻2]WO2008/023452A1 [Patent Document 2] WO2008/023452A1

先前之包含焊料粉、或於表面具有焊料層之導電性粒子之各向異性導電膏存在硬化物之透明性較低之情形。進而,存在硬化物之耐熱性較低,暴露於高溫下之硬化物發生變色之情形。 The anisotropic conductive paste which previously contains solder powder or conductive particles having a solder layer on the surface has a low transparency of the cured product. Further, there is a case where the heat resistance of the cured product is low, and the cured product exposed to high temperature is discolored.

本發明之目的在於提供一種導電材料,其硬化物之透明性優異,且硬化物之耐熱性優異,故而不易變色。又,本發明之目的在於提供一種使用上述導電材料之連接構造體。 An object of the present invention is to provide a conductive material which is excellent in transparency of a cured product and which is excellent in heat resistance of a cured product, so that it is not easily discolored. Further, it is an object of the invention to provide a connection structure using the above-mentioned conductive material.

根據本發明之較廣之態樣,提供一種導電材料,其包含於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性化合物、及熱硬化劑,且上述熱硬化性化合物包含具有環硫乙烷基及三骨架之 熱硬化性化合物。 According to a broader aspect of the present invention, there is provided a conductive material comprising a plurality of conductive particles having a solder on a surface portion of a conductive portion, a thermosetting compound, and a heat hardening agent, and wherein the thermosetting compound comprises Has an ethylene sulfide group and three A thermosetting compound of the skeleton.

於本發明之導電材料之某特定之態樣中,上述具有環硫乙烷基及三骨架之熱硬化性化合物之熔點為140℃以上。 In a specific aspect of the conductive material of the present invention, the above has an ethylene sulfide group and three The melting point of the thermosetting compound of the skeleton is 140 ° C or higher.

於本發明之導電材料之某特定之態樣中,上述導電材料包含不同於具有環硫乙烷基及三骨架之熱硬化性化合物之熱硬化性化合物。 In a specific aspect of the conductive material of the present invention, the conductive material comprises a different one from the group having an ethylene sulfide group and three A thermosetting compound of a thermosetting compound of a skeleton.

於本發明之導電材料之某特定之態樣中,上述導電性粒子之酸值為0.1mg/KOH以上且10mg/KOH以下。 In a specific aspect of the conductive material of the present invention, the conductive particles have an acid value of 0.1 mg/KOH or more and 10 mg/KOH or less.

於本發明之導電材料之某特定之態樣中,上述導電材料包含助焊劑。 In a particular aspect of the electrically conductive material of the present invention, the electrically conductive material comprises a flux.

於本發明之導電材料之某特定之態樣中,上述助焊劑為具有醯胺基與芳香族骨架的助焊劑,或者為具有醯胺基且作為羧酸或羧酸酐與pKa為9.5以下之含胺基之化合物之反應物的助焊劑。 In a specific aspect of the conductive material of the present invention, the flux is a flux having a mercaptoamine group and an aromatic skeleton, or has a mercaptoamine group and has a pKa of 9.5 or less as a carboxylic acid or a carboxylic acid anhydride. A flux of a reactant of an amine based compound.

於本發明之導電材料之某特定之態樣中,上述助焊劑於25℃下為固體。 In a particular aspect of the electrically conductive material of the present invention, the flux is solid at 25 °C.

於本發明之導電材料之某特定之態樣中,上述導電材料包含碳二醯亞胺化合物。 In a particular aspect of the electrically conductive material of the present invention, the electrically conductive material comprises a carbodiimide compound.

於本發明之導電材料之某特定之態樣中,上述導電性粒子為焊料粒子。 In a specific aspect of the conductive material of the present invention, the conductive particles are solder particles.

於本發明之導電材料之某特定之態樣中,上述導電材料包含未附著於上述導電性粒子表面之絕緣性粒子。 In a specific aspect of the conductive material of the present invention, the conductive material includes insulating particles that are not attached to the surface of the conductive particles.

於本發明之導電材料之某特定之態樣中,上述導電性粒子之平均粒徑為1μm以上且40μm以下。 In a specific aspect of the conductive material of the present invention, the conductive particles have an average particle diameter of 1 μm or more and 40 μm or less.

於本發明之導電材料之某特定之態樣中,於上述導電材料100重量%中,上述導電性粒子之含量為10重量%以上且80重量%以下。 In a specific aspect of the conductive material of the present invention, the conductive particles are contained in an amount of 10% by weight or more and 80% by weight or less based on 100% by weight of the conductive material.

於本發明之導電材料之某特定之態樣中,上述導電材料於25℃ 下為液狀,且為導電膏。 In a specific aspect of the conductive material of the present invention, the conductive material is at 25 ° C The bottom is liquid and is a conductive paste.

根據本發明之較廣之態樣,提供一種連接構造體,其包括:第1連接對象構件,其於表面具有至少1個第1電極;第2連接對象構件,其於表面具有至少1個第2電極;及連接部,其連接上述第1連接對象構件與上述第2連接對象構件;且上述連接部之材料為上述導電材料,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。 According to a broader aspect of the present invention, a connection structure comprising: a first connection member having at least one first electrode on a surface thereof; and a second connection member having at least one on a surface thereof a second electrode; and a connection portion that connects the first connection target member and the second connection target member; wherein the material of the connection portion is the conductive material, and the first electrode and the second electrode are in the connection portion The solder portion is electrically connected.

於本發明之連接構造體之某特定之態樣中,於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之相互對向之部分時,於上述第1電極與上述第2電極之相互對向之部分之面積100%中的50%以上配置有上述連接部中之焊料部。 In a specific aspect of the connection structure of the present invention, when the first electrode and the second electrode are opposed to each other along the laminated direction of the first electrode, the connection portion, and the second electrode A solder portion in the connection portion is disposed at 50% or more of an area of 100% of a portion of the first electrode and the second electrode facing each other.

本發明之導電材料由於包含於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性化合物、及熱硬化劑,且上述熱硬化性化合物包含具有環硫乙烷基及三骨架之熱硬化性化合物,故而硬化物之透明性優異,且硬化物之耐熱性優異,故而不易變色。 The conductive material of the present invention contains a plurality of conductive particles, a thermosetting compound, and a heat hardening agent having solder on a surface portion of the conductive portion, and the thermosetting compound contains an ethylene sulfide group and three Since the thermosetting compound of the skeleton is excellent in transparency and the heat resistance of the cured product is excellent, it is not easily discolored.

1‧‧‧連接構造體 1‧‧‧Connection structure

1X‧‧‧連接構造體 1X‧‧‧Connection structure

2‧‧‧第1連接對象構件 2‧‧‧1st connection object component

2a‧‧‧第1電極 2a‧‧‧1st electrode

3‧‧‧第2連接對象構件 3‧‧‧2nd connection object component

3a‧‧‧第2電極 3a‧‧‧2nd electrode

4‧‧‧連接部 4‧‧‧Connecting Department

4A‧‧‧焊料部 4A‧‧‧ solder department

4B‧‧‧硬化物部 4B‧‧‧ Hardened Parts

4X‧‧‧連接部 4X‧‧‧Connecting Department

4XA‧‧‧焊料部 4XA‧‧‧ solder department

4XB‧‧‧硬化物部 4XB‧‧‧ Hardened Parts Department

11‧‧‧導電材料 11‧‧‧Electrical materials

11A‧‧‧焊料粒子(導電性粒子) 11A‧‧‧ solder particles (conductive particles)

11B‧‧‧熱硬化性成分 11B‧‧‧ thermosetting ingredients

21‧‧‧導電性粒子(焊料粒子) 21‧‧‧Electrical particles (solder particles)

31‧‧‧導電性粒子 31‧‧‧Electrical particles

32‧‧‧基材粒子 32‧‧‧Substrate particles

33‧‧‧導電部(具有焊料之導電部) 33‧‧‧Electrically conductive parts (with conductive parts of solder)

33A‧‧‧第2導電部 33A‧‧‧2nd Conductive Department

33B‧‧‧焊料部 33B‧‧‧ solder department

41‧‧‧導電性粒子 41‧‧‧Electrical particles

42‧‧‧焊料部 42‧‧‧ solder department

圖1係模式性地表示使用本發明之一實施形態之導電材料所獲得之連接構造體的剖視圖。 Fig. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention.

圖2(a)~(c)係用以說明使用本發明之一實施形態之導電材料製造連接構造體之方法之一例之各步驟的剖視圖。 2(a) to 2(c) are cross-sectional views for explaining respective steps of an example of a method of manufacturing a bonded structure using a conductive material according to an embodiment of the present invention.

圖3係表示連接構造體之變化例的剖視圖。 Fig. 3 is a cross-sectional view showing a variation of the connection structure.

圖4係表示導電材料中可使用之導電性粒子之第1例的剖視圖。 Fig. 4 is a cross-sectional view showing a first example of conductive particles which can be used in a conductive material.

圖5係表示導電材料中可使用之導電性粒子之第2例的剖視圖。 Fig. 5 is a cross-sectional view showing a second example of conductive particles usable in a conductive material.

圖6係表示導電材料中可使用之導電性粒子之第3例的剖視圖。 Fig. 6 is a cross-sectional view showing a third example of conductive particles usable in a conductive material.

以下,對本發明之詳細情況進行說明。 Hereinafter, the details of the present invention will be described.

(導電材料) (conductive material)

本發明之導電材料包含複數個導電性粒子、及黏合劑。上述導電性粒子具有導電部。上述導電性粒子於導電部之外表面部分具有焊料。焊料包含於導電部,為導電部之一部分或全部。上述黏合劑係上述導電材料中所含之除導電性粒子以外之成分。 The conductive material of the present invention comprises a plurality of conductive particles and a binder. The conductive particles have a conductive portion. The conductive particles have solder on the outer surface portion of the conductive portion. The solder is included in the conductive portion and is part or all of the conductive portion. The binder is a component other than the conductive particles contained in the conductive material.

本發明之導電材料包含熱硬化性成分作為上述黏合劑。上述熱硬化性成分包含熱硬化性化合物、及熱硬化劑。 The conductive material of the present invention contains a thermosetting component as the above binder. The thermosetting component contains a thermosetting compound and a thermosetting agent.

於本發明之導電材料中,上述熱硬化性化合物包含具有環硫乙烷基及三骨架之熱硬化性化合物。 In the conductive material of the present invention, the thermosetting compound contains an episulfide group and three A thermosetting compound of the skeleton.

於本發明中,由於具備上述構成,故而可提高硬化物之透明性,進而硬化物之耐熱性優異,故而硬化物即便暴露於高溫下亦可不易變色。 In the present invention, since the above configuration is provided, the transparency of the cured product can be improved, and the heat resistance of the cured product is excellent. Therefore, the cured product is less likely to be discolored even when exposed to a high temperature.

進而,於本發明中,即便電極寬度較窄亦可將導電性粒子中之焊料有效率地配置於電極上。於電極寬度較窄之情形時,有不易使導電性粒子之焊料聚集於電極上之傾向,但於本發明中,即便電極寬度較窄亦可使焊料充分地聚集於電極上。於本發明中,由於具備上述構成,故而於將電極間電性連接之情形時,導電性粒子中之焊料容易位於上下相對向之電極間,可將導電性粒子中之焊料有效率地配置於電極(線)上。又,於本發明中,若電極寬度較寬,則導電性粒子中之焊料進一步有效率地配置於電極上。 Further, in the present invention, even if the electrode width is narrow, the solder in the conductive particles can be efficiently disposed on the electrode. In the case where the electrode width is narrow, there is a tendency that the solder of the conductive particles is less likely to accumulate on the electrode. However, in the present invention, even if the electrode width is narrow, the solder can be sufficiently concentrated on the electrode. In the present invention, since the above-described configuration is provided, when the electrodes are electrically connected to each other, the solder in the conductive particles is likely to be located between the electrodes facing up and down, and the solder in the conductive particles can be efficiently disposed. On the electrode (line). Further, in the present invention, when the electrode width is wide, the solder in the conductive particles is further efficiently disposed on the electrode.

又,導電性粒子中之焊料之一部分不易配置於未形成電極之區域(間隙),而可使配置於未形成電極之區域之焊料之量變得相當少。於本發明中,可使未位於相對向之電極間之焊料有效率地移動至相對向之電極間。因此,可提高電極間之導通可靠性。並且,可防止於不應連接之橫向上鄰接之電極間之電性連接,而可提高絕緣可靠性。 Further, one of the solders in the conductive particles is less likely to be disposed in a region (gap) where the electrode is not formed, and the amount of solder disposed in the region where the electrode is not formed can be made relatively small. In the present invention, the solder not located between the opposing electrodes can be efficiently moved to between the opposite electrodes. Therefore, the conduction reliability between the electrodes can be improved. Moreover, the electrical connection between the electrodes adjacent in the lateral direction which should not be connected can be prevented, and the insulation reliability can be improved.

進而,於本發明中,可提高導電材料之硬化物之耐熱性。尤其於光半導體裝置使用導電材料之情形時,於光照射時會發熱,導電材料之硬化物暴露於高溫下。本發明之導電材料由於硬化物之耐熱性優異,故而可較佳地用於光半導體裝置。尤其由於使用具有環硫乙烷基及三骨架之熱硬化性化合物,故而導電材料之硬化物之耐熱性增高。 Further, in the present invention, the heat resistance of the cured product of the conductive material can be improved. Particularly in the case where the optical semiconductor device uses a conductive material, it generates heat upon irradiation of light, and the cured material of the conductive material is exposed to a high temperature. Since the conductive material of the present invention is excellent in heat resistance of the cured product, it can be preferably used in an optical semiconductor device. Especially due to the use of ethylene sulfide groups and three Since the skeleton is a thermosetting compound, the heat resistance of the cured material of the conductive material is increased.

又,於本發明中,可提高導電材料之硬化物之折射率。尤其於本發明中,由於使用具有環硫乙烷基及三骨架之熱硬化性化合物,故而導電材料之硬化物之折射率增高。就進一步提高導電材料之硬化物之折射率之觀點而言,上述熱硬化性化合物較佳為包含具有三骨架之熱硬化性化合物,更佳為包含具有環硫乙烷基及三骨架之熱硬化性化合物,於本發明中,上述熱硬化性化合物包含具有環硫乙烷基及三骨架之熱硬化性化合物。上述熱硬化性化合物之折射率較佳為1.75以上,更佳為1.8以上,且較佳為1.9以下,更佳為1.85以下。若上述熱硬化性化合物之折射率為上述下限以上,則可進一步提高導電材料之硬化物之折射率。 Further, in the present invention, the refractive index of the cured product of the conductive material can be increased. Especially in the present invention, since the use has an ethylenethio group and three Since the skeleton is a thermosetting compound, the refractive index of the cured material of the conductive material is increased. In view of further increasing the refractive index of the cured product of the conductive material, the thermosetting compound preferably contains three a thermosetting compound of a skeleton, more preferably comprising an ethylene sulfide group and three a thermosetting compound of a skeleton, in the present invention, the thermosetting compound contains an episulfide group and three A thermosetting compound of the skeleton. The refractive index of the thermosetting compound is preferably 1.75 or more, more preferably 1.8 or more, and is preferably 1.9 or less, more preferably 1.85 or less. When the refractive index of the thermosetting compound is at least the above lower limit, the refractive index of the cured product of the conductive material can be further increased.

上述熱硬化性化合物之折射率可使用Kalnew精密折射計而進行測定。作為上述Kalnew精密折射計,例如可使用島津製作所公司製造之「KPR-3000」。 The refractive index of the above thermosetting compound can be measured using a Kalnew precision refractometer. As the Kalnew precision refractometer, for example, "KPR-3000" manufactured by Shimadzu Corporation can be used.

進而,於本發明中,可降低導電材料之硬化物之吸水率。尤其於本發明中,由於使用具有環硫乙烷基及三骨架之熱硬化性化合物,故而導電材料之硬化物之吸水率降低。就進一步降低導電材料之硬化物之吸水率之觀點而言,上述熱硬化性化合物較佳為包含具有三骨架之熱硬化性化合物,更佳為包含具有環硫乙烷基及三骨架之熱硬化性化合物,於本發明中,上述熱硬化性化合物包含具有環硫乙烷基及三骨架之熱硬化性化合物。上述熱硬化性化合物之吸水率較 佳為2%以下,更佳為1.5%以下。若上述熱硬化性化合物之吸水率為上述上限以下,則可進一步降低導電材料之硬化物之吸水率。上述熱硬化性化合物之吸水率之下限並無特別限定。上述熱硬化性化合物之吸水率可為0.1%以上。就進一步降低導電材料之硬化物之吸水率之觀點而言,上述熱硬化性化合物之吸水率以低為佳。 Further, in the present invention, the water absorption rate of the cured product of the conductive material can be lowered. Especially in the present invention, since the use has an ethylenethio group and three Since the skeleton is a thermosetting compound, the water absorption rate of the cured product of the conductive material is lowered. From the viewpoint of further reducing the water absorption rate of the cured product of the conductive material, the above thermosetting compound preferably contains three a thermosetting compound of a skeleton, more preferably comprising an ethylene sulfide group and three a thermosetting compound of a skeleton, in the present invention, the thermosetting compound contains an episulfide group and three A thermosetting compound of the skeleton. The water absorption rate of the above thermosetting compound is preferably 2% or less, more preferably 1.5% or less. When the water absorption of the thermosetting compound is at most the above upper limit, the water absorption of the cured product of the conductive material can be further reduced. The lower limit of the water absorption rate of the above thermosetting compound is not particularly limited. The water absorbing rate of the above thermosetting compound may be 0.1% or more. From the viewpoint of further reducing the water absorption rate of the cured product of the conductive material, the water absorbing rate of the above thermosetting compound is preferably low.

上述熱硬化性化合物之吸水率可以如下方式進行測定。 The water absorption rate of the above thermosetting compound can be measured as follows.

將熱硬化性化合物5g放入至水分計中,測定於105℃下使之乾燥5小時後之重量,藉此可算出吸水率。作為上述水分計,例如可使用島津製作所公司製造之「MOC63u」。 5 g of the thermosetting compound was placed in a moisture meter, and the weight after drying at 105 ° C for 5 hours was measured, whereby the water absorption ratio was calculated. As the moisture meter, for example, "MOC63u" manufactured by Shimadzu Corporation can be used.

進而,於本發明中,可防止電極間之位置偏移。於本發明中,於使第2連接對象構件重疊於上表面配置有導電材料之第1連接對象構件時,即便於第1連接對象構件之電極與第2連接對象構件之電極之對準偏移之狀態下,將第1連接對象構件與第2連接對象構件重疊之情形時,亦可對該偏移進行修正,將第1連接對象構件之電極與第2連接對象構件之電極連接(自對準效應)。 Further, in the present invention, the positional deviation between the electrodes can be prevented. In the present invention, when the second connection member is placed on the first connection member in which the conductive material is disposed on the upper surface, the alignment of the electrode of the first connection member and the electrode of the second connection member is shifted. In the case where the first connection target member and the second connection target member are overlapped, the offset can be corrected, and the electrode of the first connection target member and the electrode of the second connection target member can be connected (self-aligned) Quasi-effect).

為了將焊料進一步有效率地配置於電極上,上述導電材料較佳為於25℃下為液狀,且較佳為導電膏。為了將焊料進一步有效率地配置於電極上,上述導電材料於25℃下之黏度(η25)較佳為10Pa‧s以上,更佳為50Pa‧s以上,進而較佳為100Pa‧s以上,且較佳為800Pa‧s以下,更佳為600Pa‧s以下,進而較佳為500Pa‧s以下。上述黏度(η25)可藉由調配成分之種類及調配量而適當加以調整。又,藉由使用填料,可相對提高黏度。 In order to further efficiently dispose the solder on the electrode, the above conductive material is preferably liquid at 25 ° C, and is preferably a conductive paste. In order to further efficiently dispose the solder on the electrode, the viscosity (η25) of the conductive material at 25 ° C is preferably 10 Pa ‧ or more, more preferably 50 Pa ‧ s or more, further preferably 100 Pa ‧ or more, and It is preferably 800 Pa ‧ or less, more preferably 600 Pa ‧ or less, and still more preferably 500 Pa ‧ or less. The above viscosity (η25) can be appropriately adjusted by the type of the blending component and the blending amount. Moreover, by using a filler, the viscosity can be relatively increased.

上述黏度(η25)例如可使用E型黏度計(東機產業公司製造之「TVE22L」)等,於25℃及5rpm之條件下進行測定。 The viscosity (η25) can be measured, for example, at 25 ° C and 5 rpm using an E-type viscometer ("TVE22L" manufactured by Toki Sangyo Co., Ltd.).

上述導電材料可以導電膏及導電膜等之形式使用。上述導電膏較佳為各向異性導電膏,上述導電膜較佳為各向異性導電膜。就將導 電性粒子中之焊料進一步有效率地配置於電極上之觀點而言,上述導電材料較佳為導電膏。上述導電材料可較佳地用於電極之電性連接。上述導電材料較佳為電路連接材料。 The above conductive material may be used in the form of a conductive paste, a conductive film or the like. The conductive paste is preferably an anisotropic conductive paste, and the conductive film is preferably an anisotropic conductive film. Will guide From the viewpoint that the solder in the electric particles is further efficiently disposed on the electrode, the conductive material is preferably a conductive paste. The above conductive material can be preferably used for electrical connection of electrodes. The above conductive material is preferably a circuit connecting material.

以下,對上述導電材料中所含之各成分進行說明。 Hereinafter, each component contained in the above-mentioned conductive material will be described.

(導電性粒子) (conductive particles)

上述導電性粒子將連接對象構件之電極間電性連接。上述導電性粒子於導電部之外表面部分具有焊料。上述導電性粒子可為由焊料所形成之焊料粒子。上述焊料粒子於導電部之外表面部分具有焊料。上述焊料粒子之中心部分及導電部之外表面部分均由焊料所形成。上述焊料粒子係上述焊料粒子之中心部分及導電性之外表面均為焊料之粒子。上述導電性粒子可具有基材粒子、及配置於該基材粒子之表面上之導電部。於該情形時,上述導電性粒子於導電部之外表面部分具有焊料。 The conductive particles electrically connect the electrodes of the connection member. The conductive particles have solder on the outer surface portion of the conductive portion. The conductive particles may be solder particles formed of solder. The solder particles have solder on the outer surface portion of the conductive portion. The central portion of the solder particles and the outer surface portion of the conductive portion are each formed of solder. The solder particles are the central portion of the solder particles and the outer surface of the conductive particles are solder particles. The conductive particles may have substrate particles and a conductive portion disposed on a surface of the substrate particles. In this case, the conductive particles have solder on the outer surface portion of the conductive portion.

再者,與使用上述焊料粒子之情形相比,於使用具備未由焊料所形成之基材粒子、及配置於基材粒子之表面上之焊料部的導電性粒子之情形時,導電性粒子不易聚集於電極上,導電性粒子彼此之焊接性較低,故而有移動至電極上之導電性粒子容易向電極外移動之傾向,而有電極間之位置偏移之抑制效果亦降低之傾向。因此,上述導電性粒子較佳為由焊料所形成之焊料粒子。 In addition, when using the conductive particles including the substrate particles not formed of the solder and the solder portion disposed on the surface of the substrate particles, the conductive particles are less likely to be used than when the solder particles are used. Since the conductive particles are less likely to be welded to each other on the electrode, the conductive particles that have moved to the electrode tend to move outside the electrode, and the effect of suppressing the positional shift between the electrodes tends to be lowered. Therefore, the conductive particles are preferably solder particles formed of solder.

就有效地降低連接構造體中之連接電阻,而有效地抑制孔隙之產生之觀點而言,較佳為於上述導電性粒子之外表面(焊料之外表面)存在羧基或胺基,較佳為存在羧基,較佳為存在胺基。較佳為包含羧基或胺基之基經由Si-O鍵、醚鍵、酯鍵或下述式(X)所表示之基而共價鍵結於上述導電性粒子之外表面(焊料之外表面)。包含羧基或胺基之基亦可包含羧基與胺基之兩者。再者,於下述式(X)中,右端部及左端部表示鍵結部位。 From the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids, it is preferred that a carboxyl group or an amine group be present on the outer surface (the outer surface of the solder) of the conductive particles. A carboxyl group is present, preferably an amine group. Preferably, the group containing a carboxyl group or an amine group is covalently bonded to the outer surface of the above conductive particle via a Si-O bond, an ether bond, an ester bond or a group represented by the following formula (X) (outer surface of the solder) ). The group containing a carboxyl group or an amine group may also contain both a carboxyl group and an amine group. Further, in the following formula (X), the right end portion and the left end portion indicate a bonding portion.

於焊料表面存在羥基。藉由使該羥基與包含羧基之基進行共價鍵結,可形成強於利用其他配位鍵(螯合配位)等進行鍵結之情形之鍵,故而可獲得能夠降低電極間之連接電阻,且抑制孔隙之產生之導電性粒子。 A hydroxyl group is present on the surface of the solder. By covalently bonding the hydroxyl group to a group containing a carboxyl group, a bond stronger than the bonding by other coordinate bonds (chelating coordination) can be formed, so that the connection resistance between the electrodes can be reduced. And conductive particles that suppress the generation of voids.

於上述導電性粒子中,焊料表面與包含羧基之基之鍵結形態可不包含配位鍵結,亦可不包含利用螯合配位進行之鍵結。 In the above conductive particles, the bonding form of the surface of the solder and the group containing a carboxyl group may not include a coordination bond, or may not include a bond by chelate coordination.

就有效地降低連接構造體中之連接電阻,而有效地抑制孔隙之產生之觀點而言,上述導電性粒子較佳為藉由如下方式而獲得:使用具有可與羥基反應之官能基與羧基或胺基之化合物(以下,有時記載為化合物X),使焊料表面之羥基與上述可與羥基反應之官能基進行反應。於上述反應中,形成共價鍵。藉由使焊料表面之羥基與上述化合物X中之上述可與羥基反應之官能基進行反應,可容易地獲得包含羧基或胺基之基共價鍵結於焊料表面之導電性粒子,亦可獲得包含羧基或胺基之基經由醚鍵或酯鍵而共價鍵結於焊料表面之焊料粒子。藉由使上述焊料表面之羥基與上述可與羥基反應之官能基進行反應,而可以共價鍵結之形態使上述化合物X化學鍵結於焊料表面。 From the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids, the above-mentioned conductive particles are preferably obtained by using a functional group having a reactivity with a hydroxyl group and a carboxyl group or The amine group compound (hereinafter sometimes referred to as the compound X) reacts a hydroxyl group on the surface of the solder with a functional group capable of reacting with the hydroxyl group. In the above reaction, a covalent bond is formed. By reacting a hydroxyl group on the surface of the solder with a functional group reactive with a hydroxyl group in the above compound X, conductive particles having a carboxyl group or an amine group covalently bonded to the surface of the solder can be easily obtained, and can also be obtained. A solder particle comprising a carboxyl group or an amine group covalently bonded to a solder surface via an ether bond or an ester bond. By reacting the hydroxyl group on the surface of the solder with the functional group reactive with the hydroxyl group, the compound X can be chemically bonded to the surface of the solder in a covalently bonded form.

作為上述可與羥基反應之官能基,可列舉:羥基、羧基、酯基及羰基等。較佳為羥基或羧基。上述可與羥基反應之官能基可為羥 基,亦可為羧基。 Examples of the functional group reactive with a hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, and a carbonyl group. It is preferably a hydroxyl group or a carboxyl group. The above functional group reactive with a hydroxyl group may be hydroxy The base may also be a carboxyl group.

作為具有可與羥基反應之官能基之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-氧代己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六烷酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸二酸及十二烷二酸等。較佳為戊二酸或乙醇酸。上述具有可與羥基反應之官能基之化合物可僅使用一種,亦可併用兩種以上。上述具有可與羥基反應之官能基之化合物較佳為具有至少1個羧基之化合物。 Examples of the compound having a functional group reactive with a hydroxyl group include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, and 5-oxohexanoic acid. 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4 -Phenylbutyric acid, citric acid, dodecanoic acid, myristic acid, pentadecanoic acid, palmitic acid, 9-hexadecanoic acid, heptadecanoic acid, stearic acid, oleic acid, oil Acid, linoleic acid, (9,12,15)-linolenic acid, nonadecanoic acid, arachidic acid, sebacic acid and dodecanedioic acid. Preferred is glutaric acid or glycolic acid. The above-mentioned compound having a functional group reactive with a hydroxyl group may be used singly or in combination of two or more. The above compound having a functional group reactive with a hydroxyl group is preferably a compound having at least one carboxyl group.

上述化合物X較佳為具有助焊作用,上述化合物X較佳為於鍵結於焊料表面之狀態下具有助焊作用。具有助焊作用之化合物能夠去除焊料表面之氧化膜及電極表面之氧化膜。羧基具有助焊作用。 The above compound X preferably has a fluxing action, and the above compound X preferably has a fluxing action in a state of being bonded to the surface of the solder. The compound having a fluxing action can remove the oxide film on the surface of the solder and the oxide film on the surface of the electrode. The carboxyl group has a fluxing effect.

作為具有助焊作用之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、5-氧代己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸及4-苯基丁酸等。較佳為戊二酸或乙醇酸。上述具有助焊作用之化合物可僅使用一種,亦可併用兩種以上。 Examples of the compound having a fluxing action include acetonitrile, glutaric acid, glycolic acid, succinic acid, 5-oxohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, and 3-mercaptopropylidene. Acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, and the like. Preferred is glutaric acid or glycolic acid. The above-mentioned compound having a fluxing action may be used alone or in combination of two or more.

就有效地降低連接構造體中之連接電阻,而有效地抑制孔隙之產生之觀點而言,上述化合物X中之上述可與羥基反應之官能基較佳為羥基或羧基。上述化合物X中之上述可與羥基反應之官能基可為羥基,亦可為羧基。於上述可與羥基反應之官能基為羧基之情形時,上述化合物X較佳為具有至少2個羧基。藉由使具有至少2個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,可獲得包含羧基之基共價鍵結於焊料表面之導電性粒子。 The functional group reactive with a hydroxyl group in the above compound X is preferably a hydroxyl group or a carboxyl group from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of pores. The above functional group which can react with a hydroxyl group in the above compound X may be a hydroxyl group or a carboxyl group. In the case where the functional group reactive with a hydroxyl group is a carboxyl group, the compound X preferably has at least two carboxyl groups. Conductive particles having a carboxyl group-containing group covalently bonded to the surface of the solder can be obtained by reacting a part of the carboxyl group of a compound having at least two carboxyl groups with a hydroxyl group on the surface of the solder.

上述導電性粒子之製造方法例如包括如下步驟:使用導電性粒子,將該導電性粒子、具有可與羥基反應之官能基及羧基之化合物、觸媒及溶劑混合。於上述導電性粒子之製造方法中,藉由上述混合步驟,可容易地獲得包含羧基之基共價鍵結於焊料表面之導電性粒子。 The method for producing the conductive particles includes, for example, a step of mixing the conductive particles, a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, a catalyst, and a solvent using conductive particles. In the method for producing the conductive particles described above, the conductive particles in which the carboxyl group-containing group is covalently bonded to the surface of the solder can be easily obtained by the above mixing step.

又,於上述導電性粒子之製造方法中,較佳為使用導電性粒子,將該導電性粒子、上述具有可與羥基反應之官能基及羧基之化合物、上述觸媒及上述溶劑混合,並進行加熱。藉由混合及加熱步驟,可進一步容易地獲得包含羧基之基共價鍵結於焊料表面之導電性粒子。 Further, in the method for producing the conductive particles, it is preferred to use conductive particles, and to mix the conductive particles, the compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, the catalyst, and the solvent. heating. Conductive particles having a carboxyl group-containing group covalently bonded to the surface of the solder can be further easily obtained by a mixing and heating step.

作為上述溶劑,可列舉:甲醇、乙醇、丙醇、丁醇等醇溶劑、或丙酮、甲基乙基酮、乙酸乙酯、甲苯及二甲苯等。上述溶劑較佳為有機溶劑,更佳為甲苯。上述溶劑可僅使用一種,亦可併用兩種以上。 Examples of the solvent include an alcohol solvent such as methanol, ethanol, propanol or butanol, or acetone, methyl ethyl ketone, ethyl acetate, toluene or xylene. The above solvent is preferably an organic solvent, more preferably toluene. These solvents may be used alone or in combination of two or more.

作為上述觸媒,可列舉:對甲苯磺酸、苯磺酸及10-樟腦磺酸等。上述觸媒較佳為對甲苯磺酸。上述觸媒可僅使用一種,亦可併用兩種以上。 Examples of the catalyst include p-toluenesulfonic acid, benzenesulfonic acid, and 10-camphorsulfonic acid. The above catalyst is preferably p-toluenesulfonic acid. The above catalysts may be used alone or in combination of two or more.

較佳為於上述混合時進行加熱。加熱溫度較佳為90℃以上,更佳為100℃以上,且較佳為130℃以下,更佳為110℃以下。 It is preferred to carry out heating at the time of the above mixing. The heating temperature is preferably 90 ° C or higher, more preferably 100 ° C or higher, and is preferably 130 ° C or lower, more preferably 110 ° C or lower.

就有效地降低連接構造體中之連接電阻,而有效地抑制孔隙之產生之觀點而言,上述導電性粒子較佳為經過使用異氰酸酯化合物,並使焊料表面之羥基與上述異氰酸酯化合物進行反應之步驟而獲得。於上述反應中,形成共價鍵。藉由使焊料表面之羥基與上述異氰酸酯化合物進行反應,可容易地獲得源自異氰酸酯基之基之氮原子共價鍵結於焊料表面之導電性粒子。藉由使上述焊料表面之羥基與上述異氰酸酯化合物進行反應,可使源自異氰酸酯基之基以共價鍵結之形態化學鍵結於焊料表面。 The conductive particles are preferably subjected to an isocyanate compound and reacting a hydroxyl group on the surface of the solder with the isocyanate compound from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids. And get. In the above reaction, a covalent bond is formed. Conductive particles in which a nitrogen atom derived from an isocyanate group is covalently bonded to a solder surface can be easily obtained by reacting a hydroxyl group on the surface of the solder with the above isocyanate compound. By reacting the hydroxyl group on the surface of the solder with the isocyanate compound, the isocyanate group-derived group can be chemically bonded to the surface of the solder in a covalently bonded form.

又,可容易地使矽烷偶合劑與源自異氰酸酯基之基進行反應。由於可容易地獲得上述導電性粒子,故而上述包含羧基之基較佳為藉由使用具有羧基之矽烷偶合劑之反應導入;或者藉由在使用矽烷偶合劑之反應後,使源自矽烷偶合劑之基與具有至少1個羧基之化合物進行反應而導入。上述導電性粒子較佳為藉由如下方式而獲得:使用上述異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,與具有至少1個羧基之化合物進行反應。 Further, the decane coupling agent can be easily reacted with a group derived from an isocyanate group. Since the above-mentioned conductive particles can be easily obtained, the above-mentioned group containing a carboxyl group is preferably introduced by a reaction using a decane coupling agent having a carboxyl group; or by a reaction using a decane coupling agent, a decane coupling agent is derived. The group is introduced by reacting with a compound having at least one carboxyl group. The conductive particles are preferably obtained by reacting a hydroxyl group on the surface of the solder with the isocyanate compound using the isocyanate compound, and then reacting with a compound having at least one carboxyl group.

就有效地降低連接構造體中之連接電阻,而有效地抑制孔隙之產生之觀點而言,上述具有至少1個羧基之化合物較佳為具有複數個羧基。 The compound having at least one carboxyl group preferably has a plurality of carboxyl groups from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids.

作為上述異氰酸酯化合物,可列舉:二苯基甲烷-4,4'-二異氰酸酯(MDI)、六亞甲基二異氰酸酯(HDI)、甲苯二異氰酸酯(TDI)及異佛爾酮二異氰酸酯(IPDI)等。亦可使用該等以外之異氰酸酯化合物。於使該化合物與焊料表面進行反應後,使剩餘異氰酸酯基與和該剩餘異氰酸酯基具有反應性且具有羧基之化合物進行反應,藉此可經由式(X)所表示之基向焊料表面導入羧基。 Examples of the above isocyanate compound include diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI). Wait. Isocyanate compounds other than these may also be used. After reacting the compound with the surface of the solder, the remaining isocyanate group is reacted with a compound having a carboxyl group reactive with the remaining isocyanate group, whereby a carboxyl group can be introduced into the surface of the solder via the group represented by the formula (X).

作為上述異氰酸酯化合物,可使用具有不飽和雙鍵且具有異氰酸酯基之化合物。例如可列舉:異氰酸2-丙烯醯氧基乙酯及甲基丙烯酸2-異氰酸酯基乙酯。於使該化合物之異氰酸酯基與焊料表面進行反應後,使具有對所殘留之不飽和雙鍵具有反應性之官能基且具有羧基之化合物進行反應,藉此可經由式(X)所表示之基向焊料表面導入羧基。 As the above isocyanate compound, a compound having an unsaturated double bond and having an isocyanate group can be used. For example, 2-propenyloxyethyl isocyanate and 2-isocyanate ethyl methacrylate are mentioned. After reacting the isocyanate group of the compound with the surface of the solder, a compound having a functional group reactive with the remaining unsaturated double bond and having a carboxyl group is reacted, whereby the group represented by the formula (X) can be used. A carboxyl group is introduced to the surface of the solder.

作為上述矽烷偶合劑,可列舉3-異氰酸酯基丙基三乙氧基矽烷(Shin-Etsu Silicones公司製造之「KBE-9007」)、及3-異氰酸酯基丙基三甲氧基矽烷(MOMENTIVE公司製造之「Y-5187」)等。上述矽烷偶合劑可僅使用一種,亦可併用兩種以上。 Examples of the decane coupling agent include 3-isocyanatepropyltriethoxydecane ("KBE-9007" manufactured by Shin-Etsu Silicones Co., Ltd.) and 3-isocyanatepropyltrimethoxydecane (manufactured by MOMENTIVE Co., Ltd.). "Y-5187") and so on. The above decane coupling agents may be used alone or in combination of two or more.

作為上述具有至少1個羧基之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-氧代己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六烷酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸二酸及十二烷二酸等。較佳為戊二酸、己二酸或乙醇酸。上述具有至少1個羧基之化合物可僅使用一種,亦可併用兩種以上。 Examples of the compound having at least one carboxyl group include acetopropionic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-oxohexanoic acid, and 3- Hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-benzene Butyric acid, citric acid, dodecanoic acid, myristic acid, pentadecanoic acid, palmitic acid, 9-hexadecanoic acid, heptadecanoic acid, stearic acid, oleic acid, isooleic acid, Linseed acid, (9,12,15)-linolenic acid, nonadecanoic acid, arachidic acid, azelaic acid and dodecanedioic acid. Preferred is glutaric acid, adipic acid or glycolic acid. The compound having at least one carboxyl group may be used alone or in combination of two or more.

於使用上述異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,使具有複數個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,藉此可殘留包含羧基之基。 After the hydroxyl group on the surface of the solder is reacted with the isocyanate compound by using the above isocyanate compound, a part of the carboxyl group of a compound having a plurality of carboxyl groups is reacted with a hydroxyl group on the surface of the solder, whereby a group containing a carboxyl group remains.

於上述導電性粒子之製造方法中,於使用導電性粒子,且使用異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,使具有至少1個羧基之化合物進行反應,獲得包含羧基之基經由上述式(X)所表示之基而鍵結於焊料表面之導電性粒子。於上述導電性粒子之製造方法中,藉由上述步驟,可容易地獲得於焊料表面導入有包含羧基之基之導電性粒子。 In the method for producing the conductive particles, a conductive group is used, and an isocyanate compound is used to react a hydroxyl group on the surface of the solder with the isocyanate compound, and then a compound having at least one carboxyl group is reacted to obtain a carboxyl group-containing group. Conductive particles bonded to the surface of the solder via the group represented by the above formula (X). In the method for producing the conductive particles described above, the conductive particles having a carboxyl group-containing group introduced into the surface of the solder can be easily obtained by the above steps.

作為上述導電性粒子之具體之製造方法,可列舉以下之方法。使導電性粒子分散於有機溶劑中,並添加具有異氰酸酯基之矽烷偶合劑。其後,使用導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,使矽烷偶合劑共價鍵結於焊料表面。其次,藉由使鍵結於矽烷偶合劑之矽原子之烷氧基進行水解,而生成羥基。使所生成之羥基與具有至少1個羧基之化合物之羧基進行反應。 As a specific manufacturing method of the said electroconductive particle, the following methods are mentioned. The conductive particles are dispersed in an organic solvent, and a decane coupling agent having an isocyanate group is added. Thereafter, a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles is used to covalently bond the decane coupling agent to the surface of the solder. Next, a hydroxyl group is produced by hydrolyzing an alkoxy group bonded to a ruthenium atom of a decane coupling agent. The resulting hydroxyl group is reacted with a carboxyl group of a compound having at least one carboxyl group.

又,作為上述導電性粒子之具體之製造方法,可列舉以下之方法。使導電性粒子分散於有機溶劑中,並添加具有異氰酸酯基與不飽和雙鍵之化合物。其後,使用導電性粒子之焊料表面之羥基與異氰酸 酯基之反應觸媒,形成共價鍵。其後,使具有不飽和雙鍵、及羧基之化合物與所導入之不飽和雙鍵進行反應。 Moreover, as a specific manufacturing method of the said electroconductive particle, the following methods are mentioned. The conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, the hydroxyl group and isocyanic acid on the surface of the solder using conductive particles The ester-based reaction catalyst forms a covalent bond. Thereafter, a compound having an unsaturated double bond and a carboxyl group is allowed to react with the introduced unsaturated double bond.

作為導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,可列舉:錫系觸媒(二月桂酸二丁基錫等)、胺系觸媒(三乙二胺等)、羧酸鹽觸媒(環烷酸鉛、乙酸鉀等)、及三烷基膦觸媒(三乙基膦等)等。 Examples of the reaction catalyst for the hydroxyl group and the isocyanate group on the surface of the solder of the conductive particles include a tin-based catalyst (dibutyltin dilaurate), an amine-based catalyst (such as triethylenediamine), and a carboxylate catalyst. (lead naphthenate, potassium acetate, etc.), and a trialkylphosphine catalyst (such as triethylphosphine).

就有效地降低連接構造體中之連接電阻,而有效地抑制孔隙之產生之觀點而言,上述具有至少1個羧基之化合物較佳為下述式(1)所表示之化合物。下述式(1)所表示之化合物具有助焊作用。又,下述式(1)所表示之化合物於導入至焊料表面之狀態下具有助焊作用。 The compound having at least one carboxyl group is preferably a compound represented by the following formula (1) from the viewpoint of effectively reducing the connection resistance in the bonded structure and effectively suppressing the generation of voids. The compound represented by the following formula (1) has a fluxing action. Further, the compound represented by the following formula (1) has a fluxing action in a state of being introduced into the surface of the solder.

上述式(1)中,X表示可與羥基反應之官能基,R表示碳數1~5之二價有機基。該有機基可含有碳原子、氫原子及氧原子。該有機基可為碳數1~5之二價烴基。上述有機基之主鏈較佳為二價烴基。關於該有機基,羧基或羥基可鍵結於二價烴基。於上述式(1)所表示之化合物中例如包含檸檬酸。 In the above formula (1), X represents a functional group reactive with a hydroxyl group, and R represents a divalent organic group having 1 to 5 carbon atoms. The organic group may contain a carbon atom, a hydrogen atom, and an oxygen atom. The organic group may be a divalent hydrocarbon group having 1 to 5 carbon atoms. The main chain of the above organic group is preferably a divalent hydrocarbon group. Regarding the organic group, a carboxyl group or a hydroxyl group may be bonded to a divalent hydrocarbon group. The compound represented by the above formula (1) contains, for example, citric acid.

上述具有至少1個羧基之化合物較佳為下述式(1A)或下述式(1B)所表示之化合物。上述具有至少1個羧基之化合物較佳為下述式(1A)所表示之化合物,更佳為下述式(1B)所表示之化合物。 The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B). The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B).

[化3] [Chemical 3]

上述式(1A)中,R表示碳數1~5之二價有機基。上述式(1A)中之R係與上述式(1)中之R相同。 In the above formula (1A), R represents a divalent organic group having 1 to 5 carbon atoms. The R system in the above formula (1A) is the same as R in the above formula (1).

上述式(1B)中,R表示碳數1~5之二價有機基。上述式(1B)中之R係與上述式(1)中之R相同。 In the above formula (1B), R represents a divalent organic group having 1 to 5 carbon atoms. The R system in the above formula (1B) is the same as R in the above formula (1).

較佳為於焊料表面鍵結有下述式(2A)或下述式(2B)所表示之基。較佳為於焊料表面鍵結有下述式(2A)所表示之基,更佳為鍵結有下述式(2B)所表示之基。再者,於下述式(2A)及下述式(2B)中,左端部表示鍵結部位。 Preferably, a base represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder. It is preferable that the surface represented by the following formula (2A) is bonded to the surface of the solder, and it is more preferable to bond the group represented by the following formula (2B). In the following formula (2A) and the following formula (2B), the left end portion indicates a bonding portion.

上述式(2A)中,R表示碳數1~5之二價有機基。上述式(2A)中之 R係與上述式(1)中之R相同。 In the above formula (2A), R represents a divalent organic group having 1 to 5 carbon atoms. In the above formula (2A) The R system is the same as R in the above formula (1).

上述式(2B)中,R表示碳數1~5之二價有機基。上述式(2B)中之R係與上述式(1)中之R相同。 In the above formula (2B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2B) is the same as R in the above formula (1).

就提高焊料表面之潤濕性之觀點而言,上述具有至少1個羧基之化合物之分子量較佳為10000以下,更佳為1000以下,進而較佳為500以下。 The molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1,000 or less, still more preferably 500 or less from the viewpoint of improving the wettability of the solder surface.

關於上述分子量,於上述具有至少1個羧基之化合物不為聚合物之情形時,及於可特定出上述具有至少1個羧基之化合物之結構式之情形時,係指可根據該結構式而算出之分子量。又,於上述具有至少1個羧基之化合物為聚合物之情形時,係指重量平均分子量。 When the compound having at least one carboxyl group is not a polymer and the structural formula of the compound having at least one carboxyl group is specified, the molecular weight may be calculated based on the structural formula. The molecular weight. Further, in the case where the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight.

就於導電連接時可有效地提高導電性粒子之凝聚性之方面而言,上述導電性粒子較佳為具有導電性粒子本體、及配置於上述導電性粒子本體之表面上之陰離子聚合物。上述導電性粒子較佳為藉由利用陰離子聚合物或成為陰離子聚合物之化合物對導電性粒子本體進行表面處理而獲得。上述導電性粒子較佳為利用陰離子聚合物或成為陰離子聚合物之化合物之表面處理物。上述陰離子聚合物及成為上述陰離子聚合物之化合物可分別僅使用一種,亦可併用兩種以上。上述陰離子聚合物係具有酸性基之聚合物。 In order to effectively improve the cohesiveness of the conductive particles during the conductive connection, the conductive particles preferably have a conductive particle body and an anionic polymer disposed on the surface of the conductive particle body. The conductive particles are preferably obtained by subjecting the conductive particles to a surface treatment by using an anionic polymer or a compound which is an anionic polymer. The conductive particles are preferably surface treated materials using an anionic polymer or a compound which is an anionic polymer. The anionic polymer and the compound which is the above anionic polymer may be used alone or in combination of two or more. The above anionic polymer is a polymer having an acidic group.

作為利用陰離子聚合物對導電性粒子本體進行表面處理之方 法,可列舉如下方法:使用例如使(甲基)丙烯酸進行共聚合而成之(甲基)丙烯酸聚合物、由二羧酸與二醇合成且兩末端具有羧基之聚酯聚合物、藉由二羧酸之分子間脫水縮合反應而獲得且兩末端具有羧基之聚合物、由二羧酸與二胺合成且兩末端具有羧基之聚酯聚合物、以及具有羧基之改性聚乙烯醇(poval)(日本合成化學公司製造之「GOHSENX T」)等作為陰離子聚合物,並使陰離子聚合物之羧基與導電性粒子本體表面之羥基進行反應。 As a surface for treating the surface of conductive particles with an anionic polymer The method includes, for example, a (meth)acrylic polymer obtained by copolymerizing (meth)acrylic acid, a polyester polymer synthesized from a dicarboxylic acid and a diol and having a carboxyl group at both terminals, by a polymer obtained by intermolecular dehydration condensation reaction of a dicarboxylic acid and having a carboxyl group at both terminals, a polyester polymer synthesized from a dicarboxylic acid and a diamine and having a carboxyl group at both terminals, and a modified polyvinyl alcohol having a carboxyl group (poval ("GOHSENX T" manufactured by Nippon Synthetic Chemical Co., Ltd.) or the like as an anionic polymer, and reacts a carboxyl group of the anionic polymer with a hydroxyl group on the surface of the conductive particle body.

作為上述陰離子聚合物之陰離子部分,可列舉上述羧基,此外可列舉:甲苯磺醯基(p-H3CC6H4S(=O)2-)、磺酸根離子基(-SO3 -)、及磷酸根離子基(-PO4 -)等。 Examples of the anion portion of the anionic polymer include the above-mentioned carboxyl group, and examples thereof include a toluenesulfonyl group (pH 3 CC 6 H 4 S(=O) 2 -), a sulfonate ion group (-SO 3 - ), and Phosphate ion group (-PO 4 - ) and the like.

又,作為表面處理之其他方法,可列舉如下方法:使用具有與導電性粒子本體表面之羥基進行反應之官能基、進而具有可藉由加成、縮合反應而進行聚合之官能基之化合物,使該化合物於導電性粒子本體之表面上聚合物化。作為與導電性粒子本體表面之羥基進行反應之官能基,可列舉:羧基、及異氰酸酯基等,作為藉由加成、縮合反應而進行聚合之官能基,可列舉:羥基、羧基、胺基、及(甲基)丙烯醯基。 In addition, as another method of the surface treatment, a method of using a functional group having a functional group reactive with a hydroxyl group on the surface of the conductive particle and further having a functional group capable of polymerization by addition or condensation reaction is used. The compound is polymerized on the surface of the conductive particle body. Examples of the functional group that reacts with the hydroxyl group on the surface of the conductive particle body include a carboxyl group and an isocyanate group. Examples of the functional group to be polymerized by addition or condensation reaction include a hydroxyl group, a carboxyl group, and an amine group. And (meth) acrylonitrile.

上述陰離子聚合物之重量平均分子量較佳為2000以上,更佳為3000以上,且較佳為10000以下,更佳為8000以下。若上述重量平均分子量為上述下限以上及上述上限以下,則可向導電性粒子之表面導入足夠量之電荷、及助焊性。藉此,於導電連接時可有效地提高導電性粒子之凝聚性,且於連接對象構件之連接時,可有效地去除電極表面之氧化膜。 The weight average molecular weight of the above anionic polymer is preferably 2,000 or more, more preferably 3,000 or more, and is preferably 10,000 or less, more preferably 8,000 or less. When the weight average molecular weight is at least the above lower limit and not more than the above upper limit, a sufficient amount of charge and solderability can be introduced into the surface of the conductive particles. Thereby, the cohesiveness of the conductive particles can be effectively improved at the time of conductive connection, and the oxide film on the electrode surface can be effectively removed when the connection member is connected.

若上述重量平均分子量為上述下限以上及上述上限以下,則容易將陰離子聚合物配置於導電性粒子本體之表面上,於導電連接時可有效地提高導電性粒子之凝聚性,而可進一步有效率地將導電性粒子 配置於電極上。 When the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, the anionic polymer is easily disposed on the surface of the conductive particle body, and the cohesiveness of the conductive particles can be effectively improved during the conductive connection, and the efficiency can be further improved. Conductive particles Configured on the electrode.

上述重量平均分子量表示藉由凝膠滲透層析法(GPC)測定之基於聚苯乙烯換算之重量平均分子量。 The above weight average molecular weight means a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).

藉由利用成為陰離子聚合物之化合物對導電性粒子本體進行表面處理而獲得之聚合物之重量平均分子量可藉由如下方式而求出:溶解導電性粒子中之焊料,利用不會引起聚合物之分解之稀鹽酸等去除導電性粒子後,測定所殘留之聚合物之重量平均分子量。 The weight average molecular weight of the polymer obtained by surface-treating the main body of the conductive particles by using the compound which becomes an anionic polymer can be obtained by dissolving the solder in the conductive particles without utilizing the polymer. After the conductive particles are removed by decomposing dilute hydrochloric acid or the like, the weight average molecular weight of the remaining polymer is measured.

其次,一面參照圖式,一面對導電性粒子之具體例進行說明。 Next, a specific example of the conductive particles will be described with reference to the drawings.

圖4係表示導電材料中可使用之導電性粒子之第1例的剖視圖。 Fig. 4 is a cross-sectional view showing a first example of conductive particles which can be used in a conductive material.

圖4所示之導電性粒子21為焊料粒子。導電性粒子21之整體係由焊料所形成。導電性粒子21不具有基材粒子作為核而不為核殼粒子。導電性粒子21之中心部分及導電部之外表面部分均係由焊料所形成。 The conductive particles 21 shown in Fig. 4 are solder particles. The entirety of the conductive particles 21 is formed of solder. The conductive particles 21 do not have a substrate particle as a core but not a core-shell particle. The central portion of the conductive particles 21 and the outer surface portion of the conductive portion are formed of solder.

圖5係表示導電材料中可使用之導電性粒子之第2例的剖視圖。 Fig. 5 is a cross-sectional view showing a second example of conductive particles usable in a conductive material.

圖5所示之導電性粒子31包括:基材粒子32;及導電部33,其配置於基材粒子32之表面上。導電部33被覆基材粒子32之表面。導電性粒子31為基材粒子32之表面由導電部33所被覆之被覆粒子。 The conductive particles 31 shown in FIG. 5 include substrate particles 32 and a conductive portion 33 which is disposed on the surface of the substrate particles 32. The conductive portion 33 covers the surface of the substrate particles 32. The conductive particles 31 are coated particles in which the surface of the substrate particles 32 is covered with the conductive portion 33.

導電部33具有第2導電部33A與焊料部33B(第1導電部)。導電性粒子31於基材粒子32與焊料部33B之間具備第2導電部33A。因此,導電性粒子31包括:基材粒子32;第2導電部33A,其配置於基材粒子32之表面上;及焊料部33B,其配置於第2導電部33A之外表面上。 The conductive portion 33 has a second conductive portion 33A and a solder portion 33B (first conductive portion). The conductive particles 31 include a second conductive portion 33A between the substrate particles 32 and the solder portion 33B. Therefore, the conductive particles 31 include the substrate particles 32, the second conductive portion 33A disposed on the surface of the substrate particles 32, and the solder portion 33B disposed on the outer surface of the second conductive portion 33A.

圖6係表示導電材料中可使用之導電性粒子之第3例的剖視圖。 Fig. 6 is a cross-sectional view showing a third example of conductive particles usable in a conductive material.

如上所述,導電性粒子31中之導電部33具有2層構造。圖6所示之導電性粒子41具有焊料部42作為單層之導電部。導電性粒子41包括:基材粒子32;及焊料部42,其配置於基材粒子32之表面上。 As described above, the conductive portion 33 in the conductive particles 31 has a two-layer structure. The conductive particles 41 shown in FIG. 6 have a solder portion 42 as a single-layer conductive portion. The conductive particles 41 include base material particles 32 and a solder portion 42 which is disposed on the surface of the substrate particles 32.

作為上述基材粒子,可列舉:樹脂粒子、除金屬粒子以外之無機粒子、有機無機混合粒子及金屬粒子等。上述基材粒子較佳為除金 屬以外之基材粒子,且較佳為樹脂粒子、除金屬粒子以外之無機粒子或有機無機混合粒子。上述基材粒子可為銅粒子。上述基材粒子可具有核與配置於該核之表面上之殼,可為核殼粒子。上述核可為有機核,上述殼可為無機殼。 Examples of the substrate particles include resin particles, inorganic particles other than metal particles, organic-inorganic hybrid particles, and metal particles. Preferably, the substrate particles are gold removal The substrate particles other than the genus are preferably resin particles, inorganic particles other than the metal particles, or organic-inorganic hybrid particles. The substrate particles may be copper particles. The substrate particles may have a core and a shell disposed on a surface of the core, and may be core-shell particles. The above-mentioned core may be an organic core, and the above shell may be an inorganic shell.

作為用以形成上述樹脂粒子之樹脂,可較佳地使用各種有機物。作為用以形成上述樹脂粒子之樹脂,例如可列舉:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸甲酯及聚丙烯酸甲酯等丙烯酸系樹脂;聚碳酸酯、聚醯胺、苯酚甲醛樹脂、三聚氰胺甲醛樹脂、苯并胍胺甲醛樹脂、脲甲醛樹脂、酚樹脂、三聚氰胺樹脂、苯并胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚對苯二甲酸乙二酯、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、二乙烯苯聚合物、以及二乙烯苯系共聚物等。作為上述二乙烯苯系共聚物等,可列舉二乙烯苯-苯乙烯共聚物及二乙烯苯-(甲基)丙烯酸酯共聚物等。由於可容易地將上述樹脂粒子之硬度控制為適宜之範圍內,故而用以形成上述樹脂粒子之樹脂較佳為使一種或兩種以上具有乙烯性不飽和基之聚合性單體進行聚合而成之聚合物。 As the resin for forming the above resin particles, various organic materials can be preferably used. Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; and polymethacrylic acid; Acrylic resin such as methyl ester and polymethyl acrylate; polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin , urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polyfluorene, polyphenylene ether, polyacetal, polyimine, polyamidimide , polyetheretherketone, polyether oxime, divinylbenzene polymer, and divinylbenzene copolymer. Examples of the divinylbenzene-based copolymer and the like include a divinylbenzene-styrene copolymer and a divinylbenzene-(meth)acrylate copolymer. Since the hardness of the resin particles can be easily controlled to a suitable range, the resin for forming the resin particles is preferably obtained by polymerizing one or two or more kinds of polymerizable monomers having an ethylenically unsaturated group. The polymer.

於使具有乙烯性不飽和基之聚合性單體進行聚合而獲得上述樹脂粒子之情形時,作為該具有乙烯性不飽和基之聚合性單體,可列舉非交聯性之單體與交聯性之單體。 When the polymerizable monomer having an ethylenically unsaturated group is polymerized to obtain the above resin particles, examples of the polymerizable monomer having an ethylenically unsaturated group include a non-crosslinkable monomer and cross-linking. Sexual monomer.

作為上述非交聯性之單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯乙烯系單體;(甲基)丙烯酸、順丁烯二酸、順丁烯二酸酐等含羧基之單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異基酯等(甲基)丙烯酸烷基酯化合物;(甲基)丙烯 酸2-羥基乙酯、甘油(甲基)丙烯酸酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含氧原子之(甲基)丙烯酸酯化合物;(甲基)丙烯腈等含腈基之單體;甲基乙烯醚、乙基乙烯醚、丙基乙烯醚等乙烯醚化合物;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯等酸乙烯酯化合物;乙烯、丙烯、異戊二烯、丁二烯等不飽和烴;(甲基)丙烯酸三氟甲酯、(甲基)丙烯酸五氟乙酯、氯乙烯、氟乙烯、氯苯乙烯等含鹵素之單體等。 Examples of the non-crosslinkable monomer include a styrene monomer such as styrene or α-methylstyrene, and a carboxyl group such as (meth)acrylic acid, maleic acid or maleic anhydride. Monomer; methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, (a) Base) lauryl acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl (meth) acrylate, (meth) acrylate Alkyl (meth) acrylate compound such as ester; 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate a (meth) acrylate compound containing an oxygen atom; a nitrile group-containing monomer such as (meth)acrylonitrile; a vinyl ether compound such as methyl vinyl ether, ethyl vinyl ether or propyl vinyl ether; vinyl acetate; Acid vinyl ester compounds such as vinyl butyrate, vinyl laurate, vinyl stearate; unsaturated hydrocarbons such as ethylene, propylene, isoprene, butadiene; trifluoromethyl (meth)acrylate, (a) A halogen-containing monomer such as pentafluoroethyl acrylate, vinyl chloride, vinyl fluoride or chlorostyrene.

作為上述交聯性之單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、甘油三(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)四亞甲基二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯化合物;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯苯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙醚、γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含矽烷之單體等。 Examples of the crosslinkable monomer include tetramethylol methane tetra(meth)acrylate, tetramethylol methane tri(meth)acrylate, and tetramethylolmethane di(meth)acrylate. Ester, trimethylolpropane tri(meth) acrylate, dipentaerythritol hexa(meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri(meth) acrylate, glycerol di(methyl) Acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, (poly)tetramethylene glycol di(meth)acrylate, 1,4- Polyfunctional (meth) acrylate compounds such as butanediol di(meth) acrylate; triallyl (iso) cyanurate, triallyl trimellitate, divinyl benzene, diene phthalate Butane-containing, diallyl acrylamide, diallyl ether, γ-(meth) propylene methoxy propyl trimethoxy decane, trimethoxy decyl styrene, vinyl trimethoxy decane, etc. Monomers, etc.

「(甲基)丙烯酸酯」之用語表示丙烯酸酯與甲基丙烯酸酯。「(甲基)丙烯酸」之用語表示丙烯酸與甲基丙烯酸。「(甲基)丙烯醯基」之用語表示丙烯醯基與甲基丙烯醯基。 The term "(meth)acrylate" means acrylate and methacrylate. The term "(meth)acrylic" means acrylic acid and methacrylic acid. The term "(meth)acrylonitrile" means acryl fluorenyl and methacryl fluorenyl.

藉由利用公知之方法使上述具有乙烯性不飽和基之聚合性單體進行聚合,可獲得上述樹脂粒子。作為其方法,例如可列舉如下方法等:於自由基聚合起始劑之存在下進行懸浮聚合之方法;以及使用非交聯之種粒子使單體與自由基聚合起始劑一併膨潤並進行聚合之方法。 The above resin particles can be obtained by polymerizing the above polymerizable monomer having an ethylenically unsaturated group by a known method. The method may, for example, be a method in which suspension polymerization is carried out in the presence of a radical polymerization initiator; and a monomer which is swelled together with a radical polymerization initiator using non-crosslinked seed particles and The method of polymerization.

於上述基材粒子為除金屬以外之無機粒子或有機無機混合粒子 之情形時,作為用以形成基材粒子之無機物,可列舉:二氧化矽、氧化鋁、鈦酸鋇、氧化鋯及碳黑等。上述無機物較佳為不為金屬。作為由上述二氧化矽所形成之粒子,並無特別限定,例如可列舉藉由在使具有2個以上之水解性之烷氧基矽烷基之矽化合物進行水解而形成交聯聚合物粒子後,視需要進行煅燒而獲得之粒子。作為上述有機無機混合粒子,例如可列舉由交聯後之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。 The substrate particles are inorganic particles or organic-inorganic hybrid particles other than metals. In the case of the inorganic material for forming the substrate particles, examples thereof include cerium oxide, aluminum oxide, barium titanate, zirconia, and carbon black. The above inorganic substance is preferably not a metal. The particles formed of the above-mentioned cerium oxide are not particularly limited, and for example, after the crosslinked polymer particles are formed by hydrolyzing a hydrazine compound having two or more hydrolyzable alkoxyalkylene groups, The particles obtained by calcination as needed. Examples of the organic-inorganic hybrid particles include organic-inorganic hybrid particles obtained by crosslinking alkoxysilane alkyl polymer and an acrylic resin.

上述有機無機混合粒子較佳為具有核與配置於該核之表面上之殼的核殼型之有機無機混合粒子。上述核較佳為有機核。上述殼較佳為無機殼。就有效地降低電極間之連接電阻之觀點而言,上述基材粒子較佳為具有有機核與配置於上述有機核之表面上之無機殼之有機無機混合粒子。 The organic-inorganic hybrid particles are preferably core-shell type organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core. The above core is preferably an organic core. The above shell is preferably an inorganic shell. The substrate particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell disposed on the surface of the organic core, from the viewpoint of effectively reducing the connection resistance between the electrodes.

作為用以形成上述有機核之材料,可列舉用以形成上述樹脂粒子之樹脂等。 Examples of the material for forming the organic core include a resin or the like for forming the resin particles.

作為用以形成上述無機殼之材料,可列舉用以形成上述基材粒子之無機物。用以形成上述無機殼之材料較佳為二氧化矽。上述無機殼較佳為藉由如下方式而形成:於上述核之表面上,藉由溶膠凝膠法使金屬烷氧化物成為殼狀物後,將該殼狀物燒結。上述金屬烷氧化物較佳為矽烷烷氧化物。上述無機殼較佳為由矽烷烷氧化物所形成。 Examples of the material for forming the inorganic shell include inorganic materials for forming the substrate particles. The material for forming the above inorganic shell is preferably cerium oxide. The inorganic shell is preferably formed by forming a metal alkoxide into a shell on the surface of the core by a sol-gel method, and then sintering the shell. The metal alkoxide is preferably a decane alkoxide. The above inorganic shell is preferably formed of a decane alkoxide.

上述核之粒徑較佳為0.5μm以上,更佳為1μm以上,且較佳為100μm以下,更佳為50μm以下,進而較佳為40μm以下,尤佳為30μm以下,最佳為15μm以下。若上述核之粒徑為上述下限以上及上述上限以下,則可獲得更適合電極間之電性連接之導電性粒子,而可將基材粒子較佳地用於導電性粒子之用途。例如,若上述核之粒徑為上述下限以上及上述上限以下,則於使用上述導電性粒子連接電極間之情形時,導電性粒子與電極之接觸面積充分地增大,且於在基材粒子 之表面形成導電部時,不易形成凝聚之導電性粒子。又,經由導電性粒子連接之電極間之間隔不會變得過大,且導電部不易自基材粒子之表面剝離。 The particle diameter of the core is preferably 0.5 μm or more, more preferably 1 μm or more, and is preferably 100 μm or less, more preferably 50 μm or less, still more preferably 40 μm or less, still more preferably 30 μm or less, and most preferably 15 μm or less. When the particle diameter of the core is not less than the above lower limit and not more than the above upper limit, conductive particles more suitable for electrical connection between the electrodes can be obtained, and the substrate particles can be preferably used for the use of the conductive particles. For example, when the particle diameter of the core is not less than the above lower limit and not more than the above upper limit, when the conductive particles are connected between the electrodes, the contact area between the conductive particles and the electrode is sufficiently increased, and the substrate particles are grown. When the conductive portion is formed on the surface, it is difficult to form agglomerated conductive particles. Moreover, the interval between the electrodes connected via the conductive particles does not become excessively large, and the conductive portion is less likely to be peeled off from the surface of the substrate particles.

關於上述核之粒徑,於上述核為真球狀之情形時係指直徑,於上述核為真球狀以外之形狀之情形時係指最大徑。又,核之粒徑係指藉由任意粒徑測定裝置對核進行測定而得之平均粒徑。例如可利用使用雷射光散射、電阻值變化、攝像後之圖像分析等原理之粒度分佈測定機。 The particle diameter of the above-mentioned core means a diameter when the core is a true spherical shape, and refers to a maximum diameter when the core is a shape other than a true spherical shape. Further, the particle diameter of the core means an average particle diameter obtained by measuring a core by an arbitrary particle diameter measuring device. For example, a particle size distribution measuring machine using the principles of laser light scattering, resistance value change, and image analysis after imaging can be used.

上述殼之厚度較佳為100nm以上,更佳為200nm以上,且較佳為5μm以下,更佳為3μm以下。若上述殼之厚度為上述下限以上及上述上限以下,則可獲得更適合電極間之電性連接之導電性粒子,而可將基材粒子較佳地用於導電性粒子之用途。上述殼之厚度為每1個基材粒子之平均厚度。藉由溶膠凝膠法之控制,可控制上述殼之厚度。 The thickness of the above shell is preferably 100 nm or more, more preferably 200 nm or more, and is preferably 5 μm or less, more preferably 3 μm or less. When the thickness of the shell is not less than the above lower limit and not more than the above upper limit, conductive particles more suitable for electrical connection between the electrodes can be obtained, and the substrate particles can be preferably used for the use of the conductive particles. The thickness of the above shell is the average thickness of each of the substrate particles. The thickness of the above shell can be controlled by the control of the sol-gel method.

於上述基材粒子為金屬粒子之情形時,作為用以形成該金屬粒子之金屬,可列舉:銀、銅、鎳、矽、金及鈦等。於上述基材粒子為金屬粒子之情形時,該金屬粒子較佳為銅粒子。但是,較佳為上述基材粒子不為金屬粒子。 In the case where the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, rhodium, gold, and titanium. In the case where the substrate particles are metal particles, the metal particles are preferably copper particles. However, it is preferred that the substrate particles are not metal particles.

上述基材粒子之粒徑較佳為0.1μm以上,更佳為1μm以上,進而較佳為1.5μm以上,尤佳為2μm以上,且較佳為100μm以下,更佳為50μm以下,更佳為40μm以下,進而較佳為20μm以下,進而更佳為10μm以下,尤佳為5μm以下,最佳為3μm以下。若上述基材粒子之粒徑為上述下限以上,則導電性粒子與電極之接觸面積增大,故而可進一步提高電極間之導通可靠性,可進一步降低經由導電性粒子連接之電極間之連接電阻。若上述基材粒子之粒徑為上述上限以下,則容易充分地壓縮導電性粒子,可進一步降低電極間之連接電阻,進而可進一步縮小電極間之間隔。 The particle diameter of the substrate particles is preferably 0.1 μm or more, more preferably 1 μm or more, further preferably 1.5 μm or more, particularly preferably 2 μm or more, and preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 40 μm or less, more preferably 20 μm or less, still more preferably 10 μm or less, still more preferably 5 μm or less, and most preferably 3 μm or less. When the particle diameter of the substrate particles is at least the above lower limit, the contact area between the conductive particles and the electrode is increased, so that the conduction reliability between the electrodes can be further improved, and the connection resistance between the electrodes connected via the conductive particles can be further reduced. . When the particle diameter of the substrate particles is not more than the above upper limit, it is easy to sufficiently compress the conductive particles, and the connection resistance between the electrodes can be further reduced, and the interval between the electrodes can be further reduced.

關於上述基材粒子之粒徑,於基材粒子為真球狀之情形時表示直徑,於基材粒子不為真球狀之情形時表示最大徑。 The particle diameter of the substrate particles is a diameter when the substrate particles are in a true spherical shape, and indicates a maximum diameter when the substrate particles are not in a true spherical shape.

上述基材粒子之粒徑尤佳為2μm以上且5μm以下。若上述基材粒子之粒徑為2μm以上且5μm以下之範圍內,則可進一步縮小電極間之間隔,且即便增厚導電層之厚度,亦可獲得較小之導電性粒子。 The particle diameter of the substrate particles is particularly preferably 2 μm or more and 5 μm or less. When the particle diameter of the substrate particles is in the range of 2 μm or more and 5 μm or less, the interval between the electrodes can be further reduced, and even if the thickness of the conductive layer is increased, a small amount of conductive particles can be obtained.

於上述基材粒子之表面上形成導電部之方法、以及於上述基材粒子之表面上或上述第2導電部之表面上形成焊料部之方法並無特別限定。作為形成上述導電部及上述焊料部之方法,例如可列舉如下方法等:利用無電電鍍之方法、利用電鍍之方法、利用物理碰撞之方法、利用機械化學反應之方法、利用物理蒸鍍或物理吸附之方法、以及將金屬粉末或者包含金屬粉末與黏合劑之焊膏塗覆於基材粒子表面之方法。較佳為利用無電電鍍、電鍍或物理碰撞之方法。作為上述利用物理蒸鍍之方法,可列舉:真空蒸鍍、離子鍍覆及離子濺鍍等方法。又,於上述利用物理碰撞之方法中,例如可使用Theta Composer(德壽工作所公司製造)等。 A method of forming a conductive portion on the surface of the substrate particle, and a method of forming a solder portion on the surface of the substrate particle or the surface of the second conductive portion are not particularly limited. Examples of the method of forming the conductive portion and the solder portion include a method using electroless plating, a method using electroplating, a method using physical collision, a method using mechanochemical reaction, and physical vapor deposition or physical adsorption. And a method of applying a metal powder or a solder paste containing a metal powder and a binder to a surface of a substrate particle. It is preferred to use a method of electroless plating, electroplating or physical collision. Examples of the method using physical vapor deposition include vacuum deposition, ion plating, and ion sputtering. Further, in the above method of utilizing physical collision, for example, Theta Composer (manufactured by Deshou Works Co., Ltd.) or the like can be used.

上述基材粒子之熔點較佳為高於上述導電部及上述焊料部之熔點。上述基材粒子之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,尤佳為超過450℃。再者,上述基材粒子之熔點可未達400℃。上述基材粒子之熔點可為160℃以下。上述基材粒子之軟化點較佳為260℃以上。上述基材粒子之軟化點可未達260℃。 The melting point of the substrate particles is preferably higher than the melting points of the conductive portion and the solder portion. The melting point of the substrate particles is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, and even more preferably more than 450 ° C. Further, the substrate particles may have a melting point of less than 400 °C. The base material particles may have a melting point of 160 ° C or lower. The softening point of the substrate particles is preferably 260 ° C or higher. The substrate particles may have a softening point of less than 260 °C.

上述導電性粒子可具有單層之焊料部。上述導電性粒子亦可具有複數層導電部(焊料部、第2導電部)。即,於上述導電性粒子中,亦可積層2層以上之導電部。於上述導電部為2層以上之情形時,上述導電性粒子較佳為於導電部之外表面部分具有焊料。 The conductive particles may have a single layer solder portion. The conductive particles may have a plurality of layers of conductive portions (solder portions, second conductive portions). In other words, in the conductive particles, two or more conductive portions may be laminated. When the conductive portion is two or more layers, the conductive particles preferably have solder on the outer surface portion of the conductive portion.

上述焊料較佳為熔點為450℃以下之金屬(低熔點金屬)。上述焊料部較佳為熔點為450℃以下之金屬層(低熔點金屬層)。上述低熔點 金屬層係包含低熔點金屬之層。上述導電性粒子中之焊料較佳為熔點為450℃以下之金屬粒子(低熔點金屬粒子)。上述低熔點金屬粒子係包含低熔點金屬之粒子。該低熔點金屬表示熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述導電性粒子中之焊料較佳為包含錫。於上述焊料部中所含之金屬100重量%中及上述導電性粒子中之焊料中所含之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述導電性粒子中之焊料中所含之錫之含量為上述下限以上,則導電性粒子與電極之導通可靠性進一步增高。 The above solder is preferably a metal having a melting point of 450 ° C or less (low melting point metal). The solder portion is preferably a metal layer (low melting point metal layer) having a melting point of 450 ° C or lower. The above low melting point The metal layer comprises a layer of a low melting point metal. The solder in the conductive particles is preferably a metal particle (low melting point metal particle) having a melting point of 450 ° C or lower. The low melting point metal particles are particles containing a low melting point metal. The low melting point metal means a metal having a melting point of 450 ° C or less. The melting point of the low melting point metal is preferably 300 ° C or lower, more preferably 160 ° C or lower. Further, it is preferable that the solder in the conductive particles contains tin. The content of tin is preferably 30% by weight or more, and more preferably 40% by weight or more, based on 100% by weight of the metal contained in the solder portion and 100% by weight of the metal contained in the solder in the conductive particles. Further, it is preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin contained in the solder in the conductive particles is at least the above lower limit, the conduction reliability of the conductive particles and the electrode is further increased.

再者,上述錫之含量可使用高頻電感耦合電漿發光分光分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島津製作所公司製造之「EDX-800HS」)等而進行測定。 In addition, a high-frequency inductively coupled plasma-based spectroscopic spectrometer ("ICP-AES" manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer ("EDX-800HS" manufactured by Shimadzu Corporation) can be used. And the measurement is performed.

藉由使用上述於導電部之外表面部分具有焊料之導電性粒子,焊料發生熔融而與電極接合,焊料會使電極間導通。例如,由於焊料與電極容易進行面接觸而非點接觸,故而連接電阻降低。又,藉由使用於導電部之外表面部分具有焊料之導電性粒子,焊料與電極之接合強度增高,結果更不易產生焊料與電極之剝離,而使導通可靠性有效地增高。 By using the conductive particles having solder on the outer surface portion of the conductive portion, the solder is melted and bonded to the electrodes, and the solder conducts between the electrodes. For example, since the solder and the electrode are easily in surface contact instead of point contact, the connection resistance is lowered. Further, by using the conductive particles having solder on the outer surface portion of the conductive portion, the bonding strength between the solder and the electrode is increased, and as a result, peeling of the solder and the electrode is less likely to occur, and the conduction reliability is effectively increased.

構成上述焊料部及上述焊料粒子之低熔點金屬並無特別限定。該低熔點金屬較佳為錫、或包含錫之合金。該合金可列舉:錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。就對電極之潤濕性優異之方面而言,上述低熔點金屬較佳為錫、錫-銀合金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 The low melting point metal constituting the solder portion and the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. The low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy in terms of excellent wettability of the electrode. More preferably, it is a tin-bismuth alloy or a tin-indium alloy.

構成上述焊料(焊料部)之材料較佳為基於JIS Z3001:焊接用語而 液相線為450℃以下之熔填金屬(filler metal)。作為上述焊料之組成,例如可列舉包含鋅、金、銀、鉛、銅、錫、鉍、銦等之金屬組成。較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料較佳為不含鉛,且較佳為包含錫與銦之焊料、或包含錫與鉍之焊料。 The material constituting the solder (solder portion) is preferably based on JIS Z3001: welding terminology. The liquidus is a filler metal of 450 ° C or less. Examples of the composition of the solder include a metal composition containing zinc, gold, silver, lead, copper, tin, antimony, indium, or the like. A tin-indium system (117 ° C eutectic) or a tin-lanthanide (139 ° C eutectic) having a low melting point and no lead is preferable. That is, the solder is preferably free from lead, and is preferably a solder containing tin and indium or a solder containing tin and antimony.

為了進一步提高上述焊料與電極之接合強度,上述導電性粒子中之焊料可含有鎳、銅、銻、鋁、鋅、鐵、金、鈦、磷、鍺、碲、鈷、鉍、錳、鉻、鉬、鈀等金屬。又,就更進一步提高焊料與電極之接合強度之觀點而言,上述導電性粒子中之焊料較佳為包含鎳、銅、銻、鋁或鋅。就進一步提高焊料部或導電性粒子中之焊料與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於上述導電性粒子中之焊料100重量%中,較佳為0.0001重量%以上,且較佳為1重量%以下。 In order to further improve the bonding strength between the solder and the electrode, the solder in the conductive particles may contain nickel, copper, lanthanum, aluminum, zinc, iron, gold, titanium, phosphorus, lanthanum, cerium, cobalt, lanthanum, manganese, chromium, Metals such as molybdenum and palladium. Further, from the viewpoint of further improving the bonding strength between the solder and the electrode, the solder in the conductive particles preferably contains nickel, copper, ruthenium, aluminum or zinc. From the viewpoint of further increasing the bonding strength between the solder and the electrode in the solder portion or the conductive particles, the content of the metal for improving the bonding strength is preferably 0.0001% by weight of the solder in the conductive particles. It is more than weight%, and is preferably 1% by weight or less.

上述第2導電部之熔點較佳為高於上述焊料部之熔點。上述第2導電部之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,進而更佳為超過450℃,尤佳為超過500℃,最佳為超過600℃。上述焊料部由於熔點較低,故而於導電連接時會發生熔融。上述第2導電部較佳為於導電連接時不會發生熔融。上述導電性粒子較佳為使焊料熔融而使用,較佳為使上述焊料部熔融而使用,較佳為使上述焊料部熔融且不會使上述第2導電部熔融而使用。藉由使上述第2導電部之熔點高於上述焊料部之熔點,於導電連接時,可不使上述第2導電部熔融,而僅使上述焊料部熔融。 The melting point of the second conductive portion is preferably higher than the melting point of the solder portion. The melting point of the second conductive portion is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, more preferably more than 450 ° C, more preferably more than 500 ° C, and most preferably more than 600 ° C . Since the solder portion has a low melting point, it melts when electrically connected. Preferably, the second conductive portion does not melt when electrically connected. The conductive particles are preferably used by melting the solder, and it is preferable to use the solder portion by melting. It is preferable to use the solder portion while melting the second conductive portion without melting the solder portion. When the melting point of the second conductive portion is higher than the melting point of the solder portion, the solder portion can be melted without melting the second conductive portion during the conductive connection.

上述焊料部之熔點與上述第2導電部之熔點之差之絕對值超過0℃,較佳為5℃以上,更佳為10℃以上,進而較佳為30℃以上,尤佳為50℃以上,最佳為100℃以上。 The absolute value of the difference between the melting point of the solder portion and the melting point of the second conductive portion exceeds 0 ° C, preferably 5 ° C or higher, more preferably 10 ° C or higher, further preferably 30 ° C or higher, and particularly preferably 50 ° C or higher. The best is above 100 °C.

上述第2導電部較佳為包含金屬。構成上述第2導電部之金屬並 無特別限定。作為該金屬,例如可列舉:金、銀、銅、鉑、鈀、鋅、鉛、鋁、鈷、銦、鎳、鉻、鈦、銻、鉍、鍺及鎘、以及該等之合金等。又,作為上述金屬,可使用摻錫氧化銦(ITO)。上述金屬可僅使用一種,亦可併用兩種以上。 Preferably, the second conductive portion contains a metal. Forming the metal of the second conductive portion There is no special limit. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, ruthenium, osmium, iridium, and cadmium, and the like. Further, as the above metal, tin-doped indium oxide (ITO) can be used. The above metals may be used alone or in combination of two or more.

上述第2導電部較佳為鎳層、鈀層、銅層或金層,更佳為鎳層或金層,進而較佳為銅層。導電性粒子較佳為具有鎳層、鈀層、銅層或金層,更佳為具有鎳層或金層,進而較佳為具有銅層。藉由將具有該等較佳之導電部之導電性粒子用於電極間之連接,電極間之連接電阻進一步降低。又,於該等較佳之導電部之表面可更容易地形成焊料部。 The second conductive portion is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and further preferably a copper layer. The conductive particles preferably have a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably have a nickel layer or a gold layer, and further preferably have a copper layer. By using the conductive particles having the preferred conductive portions for the connection between the electrodes, the connection resistance between the electrodes is further lowered. Further, the solder portion can be formed more easily on the surface of the preferred conductive portions.

上述焊料部之厚度較佳為0.005μm以上,更佳為0.01μm以上,且較佳為10μm以下,更佳為1μm以下,進而較佳為0.3μm以下。若焊料部之厚度為上述下限以上及上述上限以下,則可獲得充分之導電性,且導電性粒子不會變得過硬,於電極間之連接時使導電性粒子充分地變形。 The thickness of the solder portion is preferably 0.005 μm or more, more preferably 0.01 μm or more, and is preferably 10 μm or less, more preferably 1 μm or less, still more preferably 0.3 μm or less. When the thickness of the solder portion is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles are not excessively hard, and the conductive particles are sufficiently deformed at the time of connection between the electrodes.

上述導電性粒子之平均粒徑較佳為0.5μm以上,更佳為1μm以上,進而較佳為3μm以上,且較佳為100μm以下,更佳為50μm以下,進而較佳為40μm以下,尤佳為30μm以下。若上述導電性粒子為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,而容易將導電性粒子中之焊料較多地配置於電極間,導通可靠性進一步增高。 The average particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, further preferably 3 μm or more, and more preferably 100 μm or less, more preferably 50 μm or less, still more preferably 40 μm or less, and particularly preferably It is 30 μm or less. When the conductive particles are at least the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently disposed on the electrode, and the solder in the conductive particles can be easily disposed between the electrodes and turned on. Reliability is further increased.

上述導電性粒子之「平均粒徑」表示數量平均粒徑。導電性粒子之平均粒徑例如係藉由利用電子顯微鏡或光學顯微鏡對任意50個導電性粒子進行觀察,並算出平均值而求出。 The "average particle diameter" of the above conductive particles means a number average particle diameter. The average particle diameter of the conductive particles is determined, for example, by observing any 50 conductive particles by an electron microscope or an optical microscope and calculating an average value.

上述導電性粒子之粒徑之變異係數較佳為5%以上,更佳為10%以上,且較佳為40%以下,更佳為30%以下。若上述粒徑之變異係數 為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上。其中,上述導電性粒子之粒徑之變異係數可未達5%。 The coefficient of variation of the particle diameter of the conductive particles is preferably 5% or more, more preferably 10% or more, and is preferably 40% or less, more preferably 30% or less. If the coefficient of variation of the above particle size When it is more than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be further efficiently disposed on the electrode. The coefficient of variation of the particle diameter of the conductive particles may be less than 5%.

上述變異係數(CV值)係由下述式所表示。 The above coefficient of variation (CV value) is represented by the following formula.

CV值(%)=(ρ/Dn)×100 CV value (%) = (ρ / Dn) × 100

ρ:導電性粒子之粒徑之標準偏差 ρ: standard deviation of the particle size of the conductive particles

Dn:導電性粒子之粒徑之平均值 Dn: average of the particle diameter of the conductive particles

上述導電性粒子之形狀並無特別限定。上述導電性粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。 The shape of the conductive particles is not particularly limited. The shape of the conductive particles may be spherical or may be a shape other than a spherical shape such as a flat shape.

上述導電性粒子之酸值較佳為0.1mg/KOH以上,更佳為1mg/KOH以上,且較佳為10mg/KOH以下,更佳為7mg/KOH以下。若上述酸值為上述下限以上及上述上限以下,則硬化物之耐熱性進一步增高,而可進一步抑制硬化物之變色。 The acid value of the conductive particles is preferably 0.1 mg/KOH or more, more preferably 1 mg/KOH or more, and is preferably 10 mg/KOH or less, more preferably 7 mg/KOH or less. When the acid value is not less than the above lower limit and not more than the above upper limit, the heat resistance of the cured product is further increased, and discoloration of the cured product can be further suppressed.

上述酸值可以如下方式進行測定。向乙醇中添加酚酞,對利用0.1N-KOH加以中和之溶液50ml,添加導電性粒子1g,並利用超音波處理使之分散,然後利用0.1N-KOH進行滴定。 The above acid value can be measured in the following manner. To the ethanol, phenolphthalein was added, and 50 ml of a solution neutralized with 0.1 N-KOH was added, and 1 g of conductive particles were added, and the mixture was dispersed by ultrasonic treatment, and then titrated with 0.1 N-KOH.

於上述導電材料100重量%中,上述導電性粒子之含量較佳為1重量%以上,更佳為2重量%以上,進而較佳為10重量%以上,尤佳為20重量%以上,最佳為30重量%以上,且較佳為80重量%以下,更佳為60重量%以下,進而較佳為50重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,而容易將導電性粒子中之焊料較多地配置於電極間,導通可靠性進一步增高。就進一步提高導通可靠性之觀點而言,上述導電性粒子之含量以多為佳。 The content of the conductive particles is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, and particularly preferably 20% by weight or more, based on 100% by weight of the conductive material. It is 30% by weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, still more preferably 50% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently disposed on the electrode, and the solder in the conductive particles can be easily disposed between the electrodes. The reliability of conduction is further increased. From the viewpoint of further improving the conduction reliability, the content of the above conductive particles is preferably as large as possible.

(熱硬化性化合物) (thermosetting compound)

上述熱硬化性化合物係可藉由加熱而硬化之化合物。作為上述 熱硬化性化合物,可列舉:氧雜環丁烷化合物、環氧化合物、環硫化物化合物、(甲基)丙烯酸系化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。就使導電材料之硬化性及黏度變得更良好,進一步提高連接可靠性之觀點而言,較佳為環氧化合物或環硫化物化合物。上述熱硬化性化合物可僅使用一種,亦可併用兩種以上。 The above thermosetting compound is a compound which can be hardened by heating. As above Examples of the thermosetting compound include an oxetane compound, an epoxy compound, an episulfide compound, a (meth)acrylic compound, a phenol compound, an amine compound, an unsaturated polyester compound, and a polyaminocarboxylic acid. An ester compound, a polyoxymethylene compound, a polyimine compound, or the like. The epoxy compound or the episulfide compound is preferred from the viewpoint of further improving the curing property and viscosity of the conductive material and further improving the connection reliability. These thermosetting compounds may be used alone or in combination of two or more.

於本發明中,上述熱硬化性化合物包含具有環硫乙烷基及三骨架之熱硬化性化合物。藉由使用該特定之熱硬化性,硬化物之透明性增高,硬化物之耐熱性增高。又,藉由上述熱硬化性化合物具有三骨架,硬化物之介電常數有效地降低。 In the present invention, the above thermosetting compound comprises an ethylene sulfide group and three A thermosetting compound of the skeleton. By using this specific thermosetting property, the transparency of the cured product is increased, and the heat resistance of the cured product is increased. Moreover, the above thermosetting compound has three The dielectric constant of the skeleton and hardened material is effectively reduced.

作為具有三骨架之熱硬化性化合物,可列舉三三縮水甘油醚等,可列舉:日產化學工業公司製造之TEPIC系列(TEPIC-G、TEPIC-S、TEPIC-SS、TEPIC-HP、TEPIC-L、TEPIC-PAS、TEPIC-VL、TEPIC-UC)等。上述具有環硫乙烷基及三骨架之熱硬化性化合物例如可藉由將上述具有三骨架之熱硬化性化合物之環氧基轉化為環硫乙烷基而獲得。將環氧基轉化為環硫乙烷基之方法眾所周知。 As having three The thermosetting compound of the skeleton, which can be cited as three Triglycidyl ether, etc., can be cited as: TEPIC series manufactured by Nissan Chemical Industries Co., Ltd. (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L, TEPIC-PAS, TEPIC-VL, TEPIC-UC) Wait. The above has an ethylenethio group and three a thermosetting compound of a skeleton, for example, by having the above three It is obtained by converting an epoxy group of a thermosetting compound of a skeleton into an ethylenethio group. Methods for converting an epoxy group to an ethylenethio group are well known.

上述具有環硫乙烷基及三骨架之熱硬化性化合物之熔點較佳為140℃以上,更佳為150℃以上。若上述熔點為上述下限以上,則進一步有效率地將導電性粒子配置於電極間。上述具有環硫乙烷基及三骨架之熱硬化性化合物之熔點較佳為上述導電性粒子中之焊料之熔點以上。 The above has an ethylenethio group and three The melting point of the thermosetting compound of the skeleton is preferably 140 ° C or higher, more preferably 150 ° C or higher. When the melting point is at least the above lower limit, the conductive particles are further efficiently disposed between the electrodes. The above has an ethylenethio group and three The melting point of the thermosetting compound of the skeleton is preferably equal to or higher than the melting point of the solder in the conductive particles.

上述熱硬化性化合物亦可含有不同於具有環硫乙烷基及三骨架之熱硬化性化合物之熱硬化性化合物。上述不同於具有環硫乙烷基及三骨架之熱硬化性化合物之熱硬化性化合物可為不具有環硫乙烷基之熱硬化性化合物,可為不具有三骨架之熱硬化性化合物,亦可為環氧化合物。 The above thermosetting compound may also contain a different from having an ethylenethio group and three A thermosetting compound of a thermosetting compound of a skeleton. The above is different from having an ethylene sulfide group and three The thermosetting compound of the thermosetting compound of the skeleton may be a thermosetting compound having no episulfide group, and may have no three The thermosetting compound of the skeleton may also be an epoxy compound.

作為上述環氧化合物,可列舉芳香族環氧化合物。較佳為間苯二酚型環氧化合物、萘型環氧化合物、聯苯型環氧化合物、二苯甲酮型環氧化合物等結晶性環氧化合物。較佳為於常溫(23℃)下為固體,且熔融溫度為焊料之熔點以下之環氧化合物。熔融溫度較佳為100℃以下,更佳為80℃以下,較佳為40℃以上。藉由使用上述較佳之環氧化合物,於貼合連接對象構件之階段,黏度較高,於藉由搬送等衝擊而被賦予加速度時,可抑制第1連接對象構件與第2連接對象構件之位置偏移,並且可藉由硬化時之熱大幅降低導電材料之黏度,而可高效率地進行焊料之凝聚。 An aromatic epoxy compound is mentioned as said epoxy compound. A crystalline epoxy compound such as a resorcinol type epoxy compound, a naphthalene type epoxy compound, a biphenyl type epoxy compound, or a benzophenone type epoxy compound is preferable. It is preferably an epoxy compound which is solid at normal temperature (23 ° C) and has a melting temperature below the melting point of the solder. The melting temperature is preferably 100 ° C or lower, more preferably 80 ° C or lower, and more preferably 40 ° C or higher. By using the above-mentioned preferred epoxy compound, the viscosity is high at the stage of bonding the member to be joined, and when the acceleration is applied by impact such as conveyance, the position of the first connection member and the second connection member can be suppressed. The offset, and the viscosity of the conductive material can be greatly reduced by the heat at the time of hardening, and the aggregation of the solder can be performed efficiently.

於上述導電材料100重量%中,上述熱硬化性化合物之整體之含量較佳為20重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,且較佳為99重量%以下,更佳為98重量%以下,進而較佳為90重量%以下,尤佳為80重量%以下。若上述熱硬化性化合物之含量為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,進一步抑制電極間之位置偏移,而進一步提高電極間之導通可靠性。就進一步提高耐衝擊性之觀點而言,上述熱硬化性化合物之含量以多為佳。 The content of the entire thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight, based on 100% by weight of the conductive material. Hereinafter, it is more preferably 98% by weight or less, further preferably 90% by weight or less, and particularly preferably 80% by weight or less. When the content of the thermosetting compound is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently disposed on the electrode, and the positional shift between the electrodes can be further suppressed, thereby further improving the interelectrode. Conduction reliability. From the viewpoint of further improving the impact resistance, the content of the above thermosetting compound is preferably as large as possible.

於上述導電材料100重量%中,上述具有環硫乙烷基及三骨架之熱硬化性化合物之含量較佳為10重量%以上,更佳為20重量%以上,且較佳為90重量%以下,更佳為80重量%以下。若上述具有環硫乙烷基及三骨架之熱硬化性化合物之含量為上述下限以上及上述上限以下,則硬化物之透明性及耐熱性有效地增高。 In the above 100% by weight of the conductive material, the above-mentioned having an ethylenethio group and three The content of the thermosetting compound of the skeleton is preferably 10% by weight or more, more preferably 20% by weight or more, and is preferably 90% by weight or less, more preferably 80% by weight or less. If the above has an ethylenethio group and three When the content of the thermosetting compound of the skeleton is not less than the above lower limit and not more than the above upper limit, the transparency and heat resistance of the cured product are effectively increased.

(熱硬化劑) (hot hardener)

上述熱硬化劑會使上述熱硬化性化合物熱硬化。作為上述熱硬化劑,有咪唑硬化劑、酚硬化劑、硫醇硬化劑、胺硬化劑、酸酐硬化劑、熱陽離子起始劑(熱陽離子硬化劑)及熱自由基產生劑等。上述熱 硬化劑可僅使用一種,亦可併用兩種以上。 The above-mentioned thermosetting agent thermally hardens the above thermosetting compound. Examples of the thermosetting agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation initiator (thermal cation curing agent), and a thermal radical generating agent. Above heat The hardener may be used singly or in combination of two or more.

就可使導電材料於低溫下進一步迅速地硬化之觀點而言,上述熱硬化劑較佳為咪唑硬化劑、硫醇硬化劑、或胺硬化劑。又,就提高將上述熱硬化性化合物與上述熱硬化劑混合時之保存穩定性之觀點而言,上述熱硬化劑較佳為潛伏性之硬化劑。潛伏性之硬化劑較佳為潛伏性咪唑硬化劑、潛伏性硫醇硬化劑或潛伏性胺硬化劑。再者,上述熱硬化劑可由聚胺基甲酸酯樹脂或聚酯樹脂等高分子物質所被覆。 The thermosetting agent is preferably an imidazole hardener, a thiol hardener, or an amine hardener from the viewpoint of allowing the conductive material to be further rapidly cured at a low temperature. Moreover, from the viewpoint of improving the storage stability when the thermosetting compound and the above-mentioned thermosetting agent are mixed, the above-mentioned thermosetting agent is preferably a latent curing agent. The latent hardener is preferably a latent imidazole hardener, a latent thiol hardener or a latent amine hardener. Further, the thermal curing agent may be coated with a polymer material such as a polyurethane resin or a polyester resin.

作為上述咪唑硬化劑,並無特別限定,可列舉:2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-苯基咪唑鎓偏苯三酸鹽、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三及2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三異三聚氰酸加成物等。 The imidazole curing agent is not particularly limited, and examples thereof include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2. -phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three And 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-all three An isocyanuric acid addition product or the like.

作為上述硫醇硬化劑,並無特別限定,可列舉:三羥甲基丙烷三-3-巰基丙酸酯、季戊四醇四-3-巰基丙酸酯及二季戊四醇六-3-巰基丙酸酯等。 The thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tri-3-mercaptopropionate, pentaerythritol tetrakis-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .

上述硫醇硬化劑之溶解度參數較佳為9.5以上,且較佳為12以下。上述溶解度參數係藉由Fedors法計算。例如,三羥甲基丙烷三-3-巰基丙酸酯之溶解度參數為9.6,二季戊四醇六-3-巰基丙酸酯之溶解度參數為11.4。 The solubility parameter of the above thiol hardener is preferably 9.5 or more, and preferably 12 or less. The above solubility parameters are calculated by the Fedors method. For example, the solubility parameter of trimethylolpropane tri-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.

作為上述胺硬化劑,並無特別限定,可列舉:六亞甲基二胺、八亞甲基二胺、十亞甲基二胺、3,9-雙(3-胺基丙基)-2,4,8,10-四螺[5.5]十一烷、雙(4-胺基環己基)甲烷、間苯二胺及二胺基二苯基碸等。 The amine curing agent is not particularly limited, and examples thereof include hexamethylenediamine, octamethylenediamine, decamethylenediamine, and 3,9-bis(3-aminopropyl)-2. 4,8,10-tetraspiro[5.5]undecane, bis(4-aminocyclohexyl)methane, m-phenylenediamine, and diaminodiphenylphosphonium.

作為上述熱陽離子起始劑(熱陽離子硬化劑),可列舉:錪系陽離子硬化劑、氧鎓系陽離子硬化劑及鋶系陽離子硬化劑等。作為上述錪系陽離子硬化劑,可列舉雙(4-第三丁基苯基)錪六氟磷酸鹽等。作為上述氧鎓系陽離子硬化劑,可列舉三甲基氧鎓四氟硼酸鹽等。作為上 述鋶系陽離子硬化劑,可列舉三對甲苯基鋶六氟磷酸鹽等。 Examples of the thermal cation initiator (thermal cation hardener) include a lanthanoid cation curing agent, an oxonium cation curing agent, and a lanthanoid cation curing agent. Examples of the ruthenium-based cation hardener include bis(4-t-butylphenyl)phosphonium hexafluorophosphate. Examples of the oxonium-based cation hardener include trimethyloxonium tetrafluoroborate. As above Examples of the ruthenium-based cationic hardener include tri-p-tolylsulfonium hexafluorophosphate.

作為上述熱自由基產生劑,並無特別限定,可列舉偶氮化合物及有機過氧化物等。作為上述偶氮化合物,可列舉偶氮雙異丁腈(AIBN)等。作為上述有機過氧化物,可列舉過氧化二第三丁基及過氧化甲基乙基酮等。 The thermal radical generating agent is not particularly limited, and examples thereof include an azo compound and an organic peroxide. Examples of the azo compound include azobisisobutyronitrile (AIBN) and the like. Examples of the organic peroxide include ditributyl peroxide and methyl ethyl ketone peroxide.

上述熱硬化劑之反應起始溫度較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為250℃以下,更佳為200℃以下,進而較佳為150℃以下,尤佳為140℃以下。若上述熱硬化劑之反應起始溫度為上述下限以上及上述上限以下,則焊料被進一步有效率地配置於電極上。上述熱硬化劑之反應起始溫度尤佳為80℃以上且140℃以下。 The reaction initiation temperature of the above-mentioned thermosetting agent is preferably 50 ° C or more, more preferably 70 ° C or more, further preferably 80 ° C or more, and preferably 250 ° C or less, more preferably 200 ° C or less, and further preferably Below 150 ° C, particularly preferably below 140 ° C. When the reaction initiation temperature of the thermal curing agent is not less than the above lower limit and not more than the above upper limit, the solder is further efficiently disposed on the electrode. The reaction initiation temperature of the above-mentioned thermosetting agent is particularly preferably 80 ° C or more and 140 ° C or less.

就將焊料進一步有效率地配置於電極上之觀點而言,上述熱硬化劑之反應起始溫度較佳為高於上述導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 The reaction initiation temperature of the thermal curing agent is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, from the viewpoint of further efficiently disposing the solder on the electrode. Jia is 10°C higher.

上述熱硬化劑之反應起始溫度係指DSC(Differential Scanning Calorimetry,示差掃描熱量測定)中之發熱波峰之上升開始的溫度。 The reaction initiation temperature of the above-mentioned thermosetting agent refers to a temperature at which the rise of the heat generation peak in DSC (Differential Scanning Calorimetry) starts.

上述熱硬化劑之含量並無特別限定。相對於上述熱硬化性化合物之整體100重量份,上述熱硬化劑之含量較佳為0.01重量份以上,更佳為1重量份以上,且較佳為200重量份以下,更佳為100重量份以下,進而較佳為75重量份以下。若熱硬化劑之含量為上述下限以上,則容易使導電材料充分地硬化。若熱硬化劑之含量為上述上限以下,則於硬化後不參與硬化之剩餘之熱硬化劑不易殘留,且硬化物之耐熱性進一步增高。 The content of the above-mentioned thermosetting agent is not particularly limited. The content of the above-mentioned thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, and preferably 200 parts by weight or less, more preferably 100 parts by weight, based on 100 parts by weight of the total of the thermosetting compound. Hereinafter, it is more preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above lower limit, the conductive material is easily sufficiently cured. When the content of the thermosetting agent is not more than the above upper limit, the remaining heat hardener which does not participate in hardening after curing hardly remains, and the heat resistance of the cured product is further increased.

(助焊劑) (flux)

上述導電膏較佳為包含助焊劑。藉由使用助焊劑,可將焊料進一步有效地配置於電極上。該助焊劑並無特別限定。作為助焊劑,可 使用焊接等通常所使用之助焊劑。 The above conductive paste preferably contains a flux. The solder can be further efficiently disposed on the electrode by using a flux. The flux is not particularly limited. As a flux, it can be Use a flux that is usually used, such as soldering.

作為上述助焊劑,例如可列舉:氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔融鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。上述助焊劑可僅使用一種,亦可併用兩種以上。 Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, a phosphoric acid, a derivative of phosphoric acid, an organic halide, an anthracene, and an organic acid. And turpentine and so on. The flux may be used singly or in combination of two or more.

作為上述熔融鹽,可列舉氯化銨等。作為上述有機酸,可列舉:乳酸、檸檬酸、硬脂酸、麩胺酸及戊二酸等。作為上述松脂,可列舉活化松脂及非活化松脂等。上述助焊劑較佳為具有2個以上羧基之有機酸、松脂。上述助焊劑可為具有2個以上羧基之有機酸,亦可為松脂。藉由使用具有2個以上羧基之有機酸、松脂,而使電極間之導通可靠性進一步增高。 Examples of the molten salt include ammonium chloride and the like. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the rosin include activated rosin and non-activated rosin. The flux is preferably an organic acid or rosin having two or more carboxyl groups. The flux may be an organic acid having two or more carboxyl groups or a rosin. By using an organic acid or rosin having two or more carboxyl groups, the conduction reliability between the electrodes is further increased.

上述松脂係以松香酸作為主成分之松香類。助焊劑較佳為松香類,更佳為松香酸。藉由使用該較佳之助焊劑,而使電極間之導通可靠性進一步增高。 The above rosin is a rosin having rosin acid as a main component. The flux is preferably rosin, more preferably rosin acid. By using the preferred flux, the conduction reliability between the electrodes is further increased.

較佳為上述助焊劑為具有醯胺基與芳香族骨架的助焊劑,或者為具有醯胺基且作為羧酸或羧酸酐與pKa為9.5以下之含胺基之化合物之反應物的助焊劑。於該情形時,導電材料之保存穩定性增高,於電極間之連接時除導電性粒子以外之成分不易過度流動,可提高接著力而提高導通可靠性。 Preferably, the flux is a flux having a mercaptoamine group and an aromatic skeleton, or a flux having a mercaptoamine group and reacting as a carboxylic acid or a carboxylic anhydride with an amine group-containing compound having a pKa of 9.5 or less. In this case, the storage stability of the conductive material is increased, and the components other than the conductive particles are less likely to excessively flow during the connection between the electrodes, and the adhesion can be improved to improve the conduction reliability.

較佳為上述助焊劑為具有醯胺基與芳香族骨架的助焊劑,亦較佳為具有醯胺基且作為羧酸或羧酸酐與pKa為9.5以下之含胺基之化合物之反應物的助焊劑。上述助焊劑可僅使用一種,亦可併用兩種以上。 Preferably, the flux is a flux having a mercaptoamine group and an aromatic skeleton, and is preferably a reactant having a mercaptoamine group and acting as a carboxylic acid or a carboxylic acid anhydride and an amine group-containing compound having a pKa of 9.5 or less. Flux. The flux may be used singly or in combination of two or more.

再者,於上述助焊劑為羧酸或羧酸酐與pKa為9.5以下之含胺基之化合物之反應物之情形時,無法藉由構造或特性直接特定出使用pKa處於特定之範圍內之含胺基之化合物之反應物之範圍。 Further, in the case where the flux is a reactant of a carboxylic acid or a carboxylic anhydride and an amine group-containing compound having a pKa of 9.5 or less, it is not possible to directly specify an amine having a pKa within a specific range by a structure or a property. The range of reactants of the base compound.

就有效地提高導電材料之保存穩定性,於電極間之連接時使除導電性粒子以外之成分進一步不易流動之觀點而言,上述助焊劑較佳為於25℃下為固體。 The flux is preferably solid at 25 ° C from the viewpoint of further preventing the components other than the conductive particles from flowing more easily during the connection between the electrodes in order to effectively improve the storage stability of the conductive material.

上述助焊劑例如可藉由使羧酸或羧酸酐與含胺基之化合物進行反應而獲得。 The above flux can be obtained, for example, by reacting a carboxylic acid or a carboxylic acid anhydride with an amine group-containing compound.

作為上述羧酸或羧酸酐,可列舉:琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、及蘋果酸等。 Examples of the carboxylic acid or carboxylic acid anhydride include succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, and malic acid.

作為上述含胺基之化合物,可列舉:苄胺、苯胺及二苯胺等。就有效地提高導電材料之保存穩定性,於電極間之連接時使除導電性粒子以外之成分進一步不易流動之觀點而言,上述含胺基之化合物較佳為芳香族胺化合物。 Examples of the amine group-containing compound include benzylamine, aniline, and diphenylamine. The amine group-containing compound is preferably an aromatic amine compound from the viewpoint of further preventing the components other than the conductive particles from flowing more easily during the connection between the electrodes in order to effectively improve the storage stability of the conductive material.

上述助焊劑之活性溫度(熔點)較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為200℃以下,更佳為190℃以下,更佳為160℃以下,進而較佳為150℃以下,進而更佳為140℃以下。若上述助焊劑之活性溫度為上述下限以上及上述上限以下,則進一步有效地發揮出助焊效果,焊料被進一步有效率地配置於電極上。上述助焊劑之活性溫度(熔點)較佳為80℃以上且190℃以下。上述助焊劑之活性溫度(熔點)尤佳為80℃以上且140℃以下。 The active temperature (melting point) of the flux is preferably 50 ° C or higher, more preferably 70 ° C or higher, further preferably 80 ° C or higher, and preferably 200 ° C or lower, more preferably 190 ° C or lower, more preferably 160. It is preferably 150 ° C or lower, and more preferably 140 ° C or lower. When the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the fluxing effect is further effectively exhibited, and the solder is further efficiently disposed on the electrode. The active temperature (melting point) of the above flux is preferably 80 ° C or more and 190 ° C or less. The active temperature (melting point) of the above flux is particularly preferably 80 ° C or more and 140 ° C or less.

作為助焊劑之活性溫度(熔點)為80℃以上且190℃以下之上述助焊劑,可列舉:琥珀酸(熔點186℃)、戊二酸(熔點96℃)、己二酸(熔點152℃)、庚二酸(熔點104℃)、辛二酸(熔點142℃)等二羧酸、苯甲酸(熔點122℃)、蘋果酸(熔點130℃)等。 Examples of the flux having a living temperature (melting point) of the flux of 80 ° C or more and 190 ° C or less include succinic acid (melting point 186 ° C), glutaric acid (melting point 96 ° C), and adipic acid (melting point 152 ° C). A dicarboxylic acid such as pimelic acid (melting point 104 ° C) or suberic acid (melting point 142 ° C), benzoic acid (melting point 122 ° C), malic acid (melting point 130 ° C), and the like.

又,上述助焊劑之沸點較佳為200℃以下。 Further, the flux has a boiling point of preferably 200 ° C or lower.

就將焊料進一步有效率地配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 The melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, and even more preferably 10, from the viewpoint of further efficiently disposing the solder on the electrode. Above °C.

就將焊料進一步有效率地配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述熱硬化劑之反應起始溫度,更佳為高5℃以上,進而較佳為高10℃以上。 The melting point of the flux is preferably higher than the reaction initiation temperature of the thermal curing agent, more preferably 5 ° C or higher, and further preferably 10 high, from the viewpoint of further efficiently disposing the solder on the electrode. Above °C.

上述助焊劑可分散於導電材料中,亦可附著於導電性粒子之表面上。 The flux may be dispersed in the conductive material or attached to the surface of the conductive particles.

藉由助焊劑之熔點高於焊料之熔點,可使焊料有效率地凝聚於電極部分。其原因在於,於在接合時賦予熱之情形時,若將形成於連接對象構件上之電極與電極周邊之連接對象構件之部分進行比較,則藉由電極部分之熱導率高於電極周邊之連接對象構件部分之熱導率,電極部分之升溫較快。於超過導電性粒子中之焊料之熔點之階段中,導電性粒子中之焊料會發生熔解,但由於形成於表面之氧化覆膜未達到助焊劑之熔點(活性溫度),故而不會被去除。於該狀態下,由於電極部分之溫度先達到助焊劑之熔點(活性溫度),故而優先地將到達電極上之導電性粒子中之焊料表面之氧化覆膜去除,或導電性粒子中之焊料表面之電荷被活化之助焊劑中和,藉此可使焊料於電極之表面上濡濕擴散。藉此,可有效率地使焊料凝聚於電極上。 By the melting point of the flux being higher than the melting point of the solder, the solder can be efficiently condensed on the electrode portion. The reason for this is that when heat is applied during bonding, if the electrode formed on the member to be connected is compared with the portion of the member to be connected around the electrode, the thermal conductivity of the electrode portion is higher than that of the electrode. The thermal conductivity of the portion of the component to be connected is increased, and the temperature of the electrode portion is increased. In the stage of exceeding the melting point of the solder in the conductive particles, the solder in the conductive particles is melted, but since the oxide film formed on the surface does not reach the melting point (active temperature) of the flux, it is not removed. In this state, since the temperature of the electrode portion first reaches the melting point (active temperature) of the flux, the oxide film on the surface of the solder in the conductive particles on the electrode is preferentially removed, or the surface of the solder in the conductive particles The charge is neutralized by the activated flux, whereby the solder is wetted and spread on the surface of the electrode. Thereby, the solder can be efficiently condensed on the electrode.

於上述導電材料100重量%中,上述助焊劑之含量較佳為0.5重量%以上,且較佳為30重量%以下,更佳為25重量%以下。上述導電材料可不含助焊劑。若助焊劑之含量為上述下限以上及上述上限以下,則於焊料及電極之表面進一步不易形成氧化覆膜,進而可進一步有效地去除形成於焊料及電極表面之氧化覆膜。 The content of the flux is preferably 0.5% by weight or more, and preferably 30% by weight or less, and more preferably 25% by weight or less, based on 100% by weight of the conductive material. The above conductive material may be free of flux. When the content of the flux is not less than the above lower limit and not more than the above upper limit, the oxide film is less likely to be formed on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode can be further effectively removed.

(絕緣性粒子) (insulating particles)

就高精度地控制利用導電材料之硬化物連接之連接對象構件間的間隔、以及利用導電性粒子中之焊料連接之連接對象構件間的間隔之觀點而言,上述導電材料較佳為包含絕緣性粒子。於上述導電材料中,上述絕緣性粒子可不附著於導電性粒子之表面。於上述導電材料 中,上述絕緣性粒子較佳為與上述導電性粒子分離而存在。 The conductive material preferably contains insulation from the viewpoint of accurately controlling the interval between the members to be connected connected by the cured material of the conductive material and the interval between the members to be connected by the solder in the conductive particles. particle. In the above conductive material, the insulating particles may not adhere to the surface of the conductive particles. In the above conductive material In the above, the insulating particles are preferably separated from the conductive particles.

上述絕緣性粒子之平均粒徑較佳為10μm以上,更佳為20μm以上,進而較佳為25μm以上,且較佳為100μm以下,更佳為75μm以下,進而較佳為50μm以下。若上述基材粒子之平均粒徑為上述下限以上及上述上限以下,則利用導電材料之硬化物連接之連接對象構件間的間隔、以及利用導電性粒子中之焊料連接之連接對象構件間的間隔變得更適度。 The average particle diameter of the insulating particles is preferably 10 μm or more, more preferably 20 μm or more, further preferably 25 μm or more, more preferably 100 μm or less, still more preferably 75 μm or less, and still more preferably 50 μm or less. When the average particle diameter of the substrate particles is not less than the lower limit and not more than the upper limit, the interval between the members to be joined connected by the cured material of the conductive material and the interval between the members to be connected by the solder in the conductive particles Become more moderate.

作為上述絕緣性粒子之材料,可列舉絕緣性之樹脂、及絕緣性之無機物等。作為上述絕緣性之樹脂,可列舉作為用以形成可用作基材粒子之樹脂粒子之樹脂而列舉之上述樹脂。作為上述絕緣性之無機物,可列舉作為用以形成可用作基材粒子之無機粒子之無機物而列舉之上述無機物。 Examples of the material of the insulating particles include an insulating resin and an insulating inorganic material. The resin which is exemplified as the resin for forming the resin particles which can be used as the substrate particles is exemplified as the insulating resin. The above-mentioned inorganic substance exemplified as an inorganic substance for forming inorganic particles which can be used as a substrate particle is exemplified as the insulating inorganic material.

作為上述絕緣性粒子之材料之絕緣性樹脂之具體例可列舉:聚烯烴類、(甲基)丙烯酸酯聚合物、(甲基)丙烯酸酯共聚物、嵌段聚合物、熱塑性樹脂、熱塑性樹脂之交聯物、熱硬化性樹脂及水溶性樹脂等。 Specific examples of the insulating resin as the material of the insulating particles include a polyolefin, a (meth) acrylate polymer, a (meth) acrylate copolymer, a block polymer, a thermoplastic resin, and a thermoplastic resin. A crosslinked product, a thermosetting resin, a water-soluble resin, or the like.

作為上述聚烯烴類,可列舉:聚乙烯、乙烯-乙酸乙烯酯共聚物及乙烯-丙烯酸酯共聚物等。作為上述(甲基)丙烯酸酯聚合物,可列舉:聚(甲基)丙烯酸甲酯、聚(甲基)丙烯酸乙酯及聚(甲基)丙烯酸丁酯等。作為上述嵌段聚合物,可列舉:聚苯乙烯、苯乙烯-丙烯酸酯共聚物、SB(Styrene Butadiene,苯乙烯-丁二烯)型苯乙烯-丁二烯嵌段共聚物、及SBS(Styrene Butadiene Styrene,苯乙烯-丁二烯-苯乙烯)型苯乙烯-丁二烯嵌段共聚物、以及該等之氫化物等。作為上述熱塑性樹脂,可列舉乙烯基聚合物及乙烯基共聚物等。作為上述熱硬化性樹脂,可列舉:環氧樹脂、酚樹脂及三聚氰胺樹脂等。作為上述水溶性樹脂,可列舉:聚乙烯醇、聚丙烯酸、聚丙烯醯胺、聚乙烯吡咯啶 酮、聚環氧乙烷及甲基纖維素等。較佳為水溶性樹脂,更佳為聚乙烯醇。 Examples of the polyolefins include polyethylene, an ethylene-vinyl acetate copolymer, and an ethylene-acrylate copolymer. Examples of the (meth) acrylate polymer include poly(methyl) acrylate, poly(ethyl) acrylate, and poly(meth) acrylate. Examples of the block polymer include polystyrene, styrene-acrylate copolymer, SB (Styrene Butadiene) type styrene-butadiene block copolymer, and SBS (Styrene). Butadiene Styrene, styrene-butadiene-styrene type styrene-butadiene block copolymer, and such hydrides and the like. Examples of the thermoplastic resin include a vinyl polymer and a vinyl copolymer. Examples of the thermosetting resin include an epoxy resin, a phenol resin, and a melamine resin. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polypropylene decylamine, and polyvinylpyrrolidine. Ketones, polyethylene oxide and methyl cellulose. It is preferably a water-soluble resin, more preferably polyvinyl alcohol.

作為上述絕緣性粒子之材料之絕緣性無機物之具體例可列舉二氧化矽及有機無機混合粒子等。作為上述由二氧化矽所形成之粒子,並無特別限定,例如可列舉藉由在使具有2個以上之水解性之烷氧基矽烷基之矽化合物進行水解而形成交聯聚合物粒子後,視需要進行煅燒而獲得之粒子。作為上述有機無機混合粒子,例如可列舉由交聯後之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。 Specific examples of the insulating inorganic material as the material of the insulating particles include cerium oxide, organic-inorganic hybrid particles, and the like. The particles formed of the cerium oxide are not particularly limited, and for example, after the crosslinked polymer particles are formed by hydrolyzing a hydrazine compound having two or more hydrolyzable alkoxyalkylene groups, The particles obtained by calcination as needed. Examples of the organic-inorganic hybrid particles include organic-inorganic hybrid particles obtained by crosslinking alkoxysilane alkyl polymer and an acrylic resin.

於上述導電材料100重量%中,上述絕緣性粒子之含量較佳為0.1重量%以上,更佳為0.5重量%以上,且較佳為10重量%以下,更佳為5重量%以下。上述導電材料可不含絕緣性粒子。若絕緣性粒子之含量為上述下限以上及上述上限以下,則利用導電材料之硬化物連接之連接對象構件間的間隔、以及利用導電性粒子中之焊料連接之連接對象構件間的間隔變得更適度。 The content of the insulating particles is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, and preferably 10% by weight or less, and more preferably 5% by weight or less based on 100% by weight of the conductive material. The above conductive material may not contain insulating particles. When the content of the insulating particles is not less than the above lower limit and not more than the above upper limit, the interval between the members to be joined connected by the cured material of the conductive material and the interval between the members to be connected connected by the solder in the conductive particles become more Moderate.

(碳二醯亞胺化合物) (carbodiimide compound)

就有效地提高硬化物之透明性及耐熱性之觀點而言,上述導電材料較佳為包含碳二醯亞胺化合物。 The conductive material preferably contains a carbodiimide compound from the viewpoint of effectively improving the transparency and heat resistance of the cured product.

作為上述碳二醯亞胺化合物,可列舉:1,3-二異丙基碳二醯亞胺、雙(2,6-二異丙基苯基)碳二醯亞胺、1-乙基-3-(3-二甲基胺基丙基)碳二醯亞胺鹽酸鹽、1-(3-(二甲基胺基)丙基)-3-乙基碳二醯亞胺、N,N'-二環己基碳二醯亞胺、N,N'-二異丙基碳二醯亞胺、N-環己基-N'-(2-嗎啉基乙基)碳二醯亞胺甲基對甲苯磺酸鹽、末端異氰酸酯基改性聚碳二醯亞胺化合物、環狀碳二醯亞胺化合物、於碳二醯亞胺化觸媒之存在下使二異氰酸酯進行聚合而獲得之聚碳二醯亞胺化合物等。就分子量較大,不易產生釋氣之方面而言,較佳為聚碳二醯亞胺化合 物。 Examples of the above carbodiimide compound include 1,3-diisopropylcarbodiimide, bis(2,6-diisopropylphenyl)carbodiimide, and 1-ethyl- 3-(3-dimethylaminopropyl)carbodiimide hydrochloride, 1-(3-(dimethylamino)propyl)-3-ethylcarbodiimide, N, N'-dicyclohexylcarbodiimide, N,N'-diisopropylcarbodiimide, N-cyclohexyl-N'-(2-morpholinoethyl)carbodiimide a p-toluenesulfonate, a terminal isocyanate-modified polycarbodiimide compound, a cyclic carbodiimide compound, a polyisocyanate obtained by polymerizing in the presence of a carbodiimide catalyst A carbodiimide compound or the like. In terms of a larger molecular weight and less prone to outgassing, a polycarbodiimide combination is preferred. Things.

作為上述聚碳二醯亞胺化合物之市售品,例如可列舉Carbodilite V02B、Carbodilite V04K、Carbodilite V05(均為日清紡公司製造)等。 As a commercial item of the above-mentioned polycarbodiimide compound, Carbodilite V02B, Carbodilite V04K, Carbodilite V05 (both manufactured by Nisshinbo Co., Ltd.), etc. are mentioned, for example.

就有效地提高硬化物之透明性及耐熱性之觀點而言,於上述導電材料100重量%中,上述碳二醯亞胺化合物之含量較佳為0.01重量%以上,更佳為0.1重量%以上,且較佳為5重量%以下,更佳為3重量%以下。 The content of the carbodiimide compound is preferably 0.01% by weight or more, and more preferably 0.1% by weight or more, based on 100% by weight of the conductive material, from the viewpoint of effectively improving the transparency and heat resistance of the cured product. It is preferably 5% by weight or less, more preferably 3% by weight or less.

(其他成分) (other ingredients)

上述導電材料視需要例如可含有偶合劑、遮光劑、反應性稀釋劑、消泡劑、調平劑、填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、防靜電劑及阻燃劑等各種添加劑。 The conductive material may contain, for example, a coupling agent, an opacifier, a reactive diluent, an antifoaming agent, a leveling agent, a filler, a bulking agent, a softening agent, a plasticizer, a polymerization catalyst, a hardening catalyst, and a coloring. Various additives such as agents, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, lubricants, antistatic agents and flame retardants.

(連接構造體及連接構造體之製造方法) (Manufacturing method of connection structure and connection structure)

本發明之連接構造體包括:第1連接對象構件,其於表面具有至少1個第1電極;第2連接對象構件,其於表面具有至少1個第2電極;及連接部,其連接上述第1連接對象構件與上述第2連接對象構件。於本發明之連接構造體中,上述連接部之材料為上述導電材料。上述連接部為上述導電材料之硬化物。上述連接部係由上述導電材料所形成。於本發明之連接構造體中,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。 The connection structure of the present invention includes: a first connection target member having at least one first electrode on a surface thereof; a second connection target member having at least one second electrode on a surface thereof; and a connection portion connecting the above 1 is to connect the target member to the second connection target member. In the connection structure of the present invention, the material of the connecting portion is the conductive material. The connecting portion is a cured product of the conductive material. The connecting portion is formed of the above conductive material. In the connection structure of the present invention, the first electrode and the second electrode are electrically connected by a solder portion of the connection portion.

上述連接構造體之製造方法包括如下步驟:使用上述導電材料,於表面具有至少1個第1電極之第1連接對象構件之表面上配置上述導電材料之步驟;於上述導電材料之與上述第1連接對象構件側相反之表面上,以上述第1電極與上述第2電極相對向之方式配置表面具有至少1個第2電極之第2連接對象構件之步驟;及藉由將上述導電材料加熱至上述導電性粒子中之焊料之熔點以上,而利用上述導電材料 形成連接上述第1連接對象構件與上述第2連接對象構件之連接部,且利用上述連接部中之焊料部而將上述第1電極與上述第2電極電性連接之步驟。較佳為將上述導電材料加熱至上述熱硬化性成分、熱硬化性化合物之硬化溫度以上。 The method for manufacturing the connection structure includes the step of disposing the conductive material on a surface of a first connection member having at least one first electrode on the surface thereof using the conductive material, and the first conductive material and the first a step of arranging a second connection member having at least one second electrode on the surface of the surface opposite to the connection target member so that the first electrode and the second electrode face each other; and heating the conductive material to The conductive material is more than the melting point of the solder in the conductive particles, and the conductive material is used. The connection portion connecting the first connection target member and the second connection target member is formed, and the first electrode and the second electrode are electrically connected by a solder portion in the connection portion. Preferably, the conductive material is heated to a temperature higher than a curing temperature of the thermosetting component or the thermosetting compound.

於本發明之連接構造體及上述連接構造體之製造方法中,由於使用特定之導電材料,故而複數個導電性粒子中之焊料容易聚集於第1電極與第2電極之間,可將焊料有效率地配置於電極(線)上。又,焊料之一部分不易配置於未形成電極之區域(間隙),而可使配置於未形成電極之區域之焊料粒子之量變得相當少。因此,可提高第1電極與第2電極之間之導通可靠性。並且,可防止於不應連接之橫向上鄰接之電極間之電性連接,而可提高絕緣可靠性。 In the connection structure of the present invention and the method of manufacturing the connection structure, since a specific conductive material is used, solder in the plurality of conductive particles is likely to be collected between the first electrode and the second electrode, and the solder can be used. Efficiently placed on the electrode (line). Further, it is difficult for one part of the solder to be disposed in a region (gap) where the electrode is not formed, and the amount of the solder particles disposed in the region where the electrode is not formed can be made relatively small. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. Moreover, the electrical connection between the electrodes adjacent in the lateral direction which should not be connected can be prevented, and the insulation reliability can be improved.

又,為了將複數個導電性粒子中之焊料有效率地配置於電極上,且使配置於未形成電極之區域之焊料之量變得相當少,作為上述導電材料,較佳為使用導電膏而非導電膜。 Further, in order to efficiently dispose the solder in the plurality of conductive particles on the electrode and to reduce the amount of solder disposed in the region where the electrode is not formed, it is preferable to use the conductive paste as the conductive material instead of Conductive film.

電極間之焊料部之厚度較佳為10μm以上,更佳為20μm以上,且較佳為100μm以下,更佳為80μm以下。電極表面上之焊料潤濕面積(電極露出之面積100%中之焊料所接觸之面積)較佳為50%以上,更佳為70%以上,且較佳為100%以下。 The thickness of the solder portion between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, and is preferably 100 μm or less, more preferably 80 μm or less. The solder wetted area on the surface of the electrode (the area in contact with the solder in the area where the electrode is exposed is 100%) is preferably 50% or more, more preferably 70% or more, and preferably 100% or less.

於本發明之連接構造體之製造方法中,較佳為於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,對上述導電材料施加上述第2連接對象構件之重量而不進行加壓,且較佳為於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,不對上述導電材料施加超過上述第2連接對象構件之重量之力的加壓壓力。於該等情形時,可於複數個焊料部,進一步提高焊料量之均一性。進而,可進一步有效地加厚焊料部之厚度,複數個導電性粒子中之焊料容易大量聚集於電極間,而可將複數個導電性粒子中之焊料進一步有效率地配置 於電極(線)上。又,複數個導電性粒子中之焊料之一部分不易配置於未形成電極之區域(間隙),而可進一步減少配置於未形成電極之區域之導電性粒子中之焊料的量。因此,可進一步提高電極間之導通可靠性。並且,可進一步防止於不應連接之橫向上鄰接之電極間之電性連接,而可進一步提高絕緣可靠性。 In the method of manufacturing the connection structure of the present invention, preferably, in the step of arranging the second connection member and the step of forming the connection portion, the weight of the second connection member is applied to the conductive material without performing It is preferable that the step of arranging the second connection member and the step of forming the connection portion do not apply a pressing force to the conductive material that exceeds the weight of the second connection member. In such cases, the uniformity of the amount of solder can be further improved in a plurality of solder portions. Further, the thickness of the solder portion can be further effectively increased, and the solder in the plurality of conductive particles can be easily accumulated in a large amount between the electrodes, and the solder in the plurality of conductive particles can be further efficiently disposed. On the electrode (line). Further, one of the plurality of conductive particles is less likely to be disposed in a region (gap) where the electrode is not formed, and the amount of solder disposed in the conductive particles in the region where the electrode is not formed can be further reduced. Therefore, the conduction reliability between the electrodes can be further improved. Moreover, the electrical connection between the electrodes adjacent in the lateral direction which should not be connected can be further prevented, and the insulation reliability can be further improved.

進而,本發明者亦發現,若於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,對上述導電材料施加上述第2連接對象構件之重量而不進行加壓,配置於在形成連接部前未形成電極之區域(間隙)之焊料更容易聚集於第1電極與第2電極之間,而可將複數個導電性粒子中之焊料進一步有效率地配置於電極(線)上。於本發明中,為了以更高之水準獲得本發明之效果,組合採用使用導電膏而非導電膜之構成與對上述導電膏施加上述第2連接對象構件之重量而不進行加壓之構成具有較大意義。 Furthermore, the inventors have found that, in the step of arranging the second connection member and the step of forming the connection portion, the weight of the second connection member is applied to the conductive material without being pressurized, and is disposed in the conductive material. The solder in which the region (gap) in which the electrode is not formed before the connection portion is formed is more likely to be collected between the first electrode and the second electrode, and the solder in the plurality of conductive particles can be more efficiently disposed on the electrode (line). . In the present invention, in order to obtain the effect of the present invention at a higher level, a combination of a conductive paste and a conductive film is used, and a weight of the second connecting member is applied to the conductive paste without applying pressure. Great sense.

再者,於WO2008/023452A1中,記載有就將焊料粉推壓流動至電極表面而使之高效率地移動之觀點而言,可於接著時以特定之壓力進行加壓,且記載有就更確實地形成焊料區域之觀點而言,加壓壓力例如設為0MPa以上,較佳為設為1MPa以上,進而記載有即便特意對膠帶施加之壓力為0MPa,亦可藉由配置於膠帶上之構件之自重,對膠帶施加特定之壓力。於WO2008/023452A1中雖然記載有特意對膠帶施加之壓力可為0MPa,但關於賦予超過0MPa之壓力之情形與設為0MPa之情形之效果的差異未作任何記載。又,於WO2008/023452A1中,關於使用膏狀之導電膏而非膜狀之導電膏之重要性亦無任何認識。 Furthermore, in WO 2008/023452 A1, it is described that the solder powder is pressed and flowed to the surface of the electrode to move it efficiently, and it is possible to pressurize at a specific pressure in the subsequent step, and it is described that it is more From the viewpoint of reliably forming the solder region, the pressurizing pressure is, for example, 0 MPa or more, preferably 1 MPa or more, and further described is a member which is disposed on the tape even if the pressure applied to the tape is 0 MPa. Its own weight, put a specific pressure on the tape. Although it is described in WO 2008/023452 A1 that the pressure applied to the tape is 0 MPa, the difference between the effect of applying a pressure exceeding 0 MPa and the case of setting 0 MPa is not described. Further, in WO 2008/023452 A1, there is no knowledge about the importance of using a paste-like conductive paste instead of a film-like conductive paste.

又,若使用導電膏而非導電膜,則容易根據導電膏之塗佈量而調整連接部及焊料部之厚度。另一方面,關於導電膜,有為了變更或調整連接部之厚度,而必須準備不同厚度之導電膜,或準備特定厚度 之導電膜之問題。又,關於導電膜,與導電膏相比,於焊料之熔融溫度下,無法充分地降低導電膜之熔融黏度,而有容易阻礙焊料之凝聚之傾向。 Moreover, when a conductive paste is used instead of a conductive film, it is easy to adjust the thickness of a connection part and a solder part according to the coating amount of a conductive paste. On the other hand, regarding the conductive film, in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film of a different thickness, or to prepare a specific thickness. The problem of the conductive film. Further, in the conductive film, the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder as compared with the conductive paste, and the solder tends to be inhibited from agglomerating.

以下,一面參照圖式,一面對本發明之具體之實施形態進行說明。 Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.

圖1係模式性地表示使用本發明之一實施形態之導電材料所獲得之連接構造體的剖視圖。 Fig. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention.

圖1所示之連接構造體1包括:第1連接對象構件2、第2連接對象構件3、及連接第1連接對象構件2與第2連接對象構件3之連接部4。連接部4係由上述導電材料所形成。於本實施形態中,上述導電材料包含導電性粒子、及黏合劑。於本實施形態中,導電材料包含焊料粒子作為導電性粒子。於本實施形態中,黏合劑包含熱硬化性化合物、及熱硬化劑。將上述熱硬化性化合物與上述熱硬化劑稱為熱硬化性成分。 The connection structure 1 shown in FIG. 1 includes a first connection object member 2, a second connection object member 3, and a connection portion 4 that connects the first connection object member 2 and the second connection object member 3. The connecting portion 4 is formed of the above-described conductive material. In the embodiment, the conductive material contains conductive particles and a binder. In the present embodiment, the conductive material contains solder particles as conductive particles. In the present embodiment, the binder contains a thermosetting compound and a heat curing agent. The thermosetting compound and the above-mentioned thermosetting agent are referred to as thermosetting components.

連接部4具有:焊料部4A,其係複數個焊料粒子聚集並相互接合而成;及硬化物部4B,其係熱硬化性成分發生熱硬化而成。 The connection portion 4 has a solder portion 4A in which a plurality of solder particles are aggregated and joined to each other, and a cured portion 4B in which a thermosetting component is thermally cured.

第1連接對象構件2於表面(上表面)具有複數個第1電極2a。第2連接對象構件3於表面(下表面)具有複數個第2電極3a。第1電極2a與第2電極3a藉由焊料部4A而電性連接。因此,第1連接對象構件2與第2連接對象構件3藉由焊料部4A而電性連接。再者,於連接部4中,於不同於聚集於第1電極2a與第2電極3a間之焊料部4A之區域(硬化物部4B部分)不存在焊料。於不同於焊料部4A之區域(硬化物部4B部分)不存在與焊料部4A分離之焊料。再者,若為少量,則亦可於不同於聚集於第1電極2a與第2電極3a間之焊料部4A之區域(硬化物部4B部分)存在焊料。 The first connection target member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the front surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A. Further, in the connection portion 4, solder is not present in a region (a portion of the cured portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a. There is no solder separated from the solder portion 4A in a region different from the solder portion 4A (the portion of the cured portion 4B). Further, in the case of a small amount, solder may be present in a region (a portion of the cured portion 4B) different from the solder portion 4A collected between the first electrode 2a and the second electrode 3a.

如圖1所示,於連接構造體1中,複數個焊料粒子聚集於第1電極 2a與第2電極3a之間,於複數個焊料粒子發生熔融後,焊料粒子之熔融物於電極之表面潤濕擴散後進行固化,而形成焊料部4A。因此,焊料部4A與第1電極2a、以及焊料部4A與第2電極3a之連接面積增大。即,藉由使用焊料粒子,與使用導電部之外表面部分為鎳、金或銅等金屬之導電性粒子之情形相比,焊料部4A與第1電極2a、以及焊料部4A與第2電極3a之接觸面積增大。因此,連接構造體1之導通可靠性及連接可靠性增高。 As shown in FIG. 1, in the connection structure 1, a plurality of solder particles are collected on the first electrode. Between 2a and the second electrode 3a, after a plurality of solder particles are melted, the melt of the solder particles is wetted and diffused on the surface of the electrode, and then solidified to form the solder portion 4A. Therefore, the connection area between the solder portion 4A and the first electrode 2a and the solder portion 4A and the second electrode 3a is increased. In other words, by using the solder particles, the solder portion 4A and the first electrode 2a, and the solder portion 4A and the second electrode are used as compared with the case where the conductive portion of the metal such as nickel, gold or copper is used. The contact area of 3a increases. Therefore, the connection reliability and connection reliability of the connection structure 1 are increased.

再者,於圖1所示之連接構造體1中,焊料部4A之全部位於第1、第2電極2a、3a間之相對向之區域。圖3所示之變化例之連接構造體1X僅連接部4X不同於圖1所示之連接構造體1。連接部4X具有焊料部4XA與硬化物部4XB。可如連接構造體1X般,焊料部4XA之大部分位於第1、第2電極2a、3a之相對向之區域,且焊料部4XA之一部分自第1、第2電極2a、3a之相對向之區域向側方伸出。自第1、第2電極2a、3a之相對向之區域向側方伸出之焊料部4XA為焊料部4XA之一部分,而並非自焊料部4XA分離之焊料。再者,於本實施形態中,可減少自焊料部分離之焊料之量,自焊料部分離之焊料亦可存在於硬化物部中。 Further, in the connection structure 1 shown in Fig. 1, all of the solder portions 4A are located in the opposing regions between the first and second electrodes 2a and 3a. The connection structure 1X of the modification shown in FIG. 3 differs from the connection structure 1 shown in FIG. 1 only in the connection portion 4X. The connecting portion 4X has a solder portion 4XA and a cured portion 4XB. As in the connection structure 1X, most of the solder portion 4XA is located in a region facing the first and second electrodes 2a and 3a, and a portion of the solder portion 4XA is opposed to the first and second electrodes 2a and 3a. The area extends to the side. The solder portion 4XA that protrudes laterally from the opposing regions of the first and second electrodes 2a and 3a is a part of the solder portion 4XA, and is not solder separated from the solder portion 4XA. Further, in the present embodiment, the amount of solder separated from the solder portion can be reduced, and the solder separated from the solder portion can be present in the cured portion.

若減少焊料粒子之使用量,則變得容易獲得連接構造體1。若增加焊料粒子之使用量,則變得容易獲得連接構造體1X。 When the amount of use of the solder particles is reduced, the connection structure 1 is easily obtained. When the amount of use of the solder particles is increased, the connection structure 1X is easily obtained.

就進一步提高導通可靠性之觀點而言,於連接構造體1、1X中,較佳為於沿第1電極2a、連接部4、4X及第2電極3a之積層方向觀察第1電極2a與第2電極3a之相互對向之部分時,於第1電極2a與第2電極3a之相互對向之部分之面積100%中的50%以上配置有連接部4、4X中之焊料部4A、4XA。 From the viewpoint of further improving the conduction reliability, it is preferable that the first electrode 2a and the first electrode 2a and the first electrode 2a, the connection portion 4, the fourth electrode 3a and the second electrode 3a are laminated in the connection structure 1 and 1X. When the two electrodes 3a are opposed to each other, the solder portions 4A and 4XA of the connecting portions 4 and 4X are disposed at 50% or more of the area of the portion where the first electrode 2a and the second electrode 3a face each other by 100% or more. .

就進一步提高導通可靠性之觀點而言,較佳為於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第 2電極之相互對向之部分時,於上述第1電極與上述第2電極之相互對向之部分之面積100%中的50%以上(更佳為60%以上,進而較佳為70%以上,尤佳為80%以上,最佳為90%以上)配置有上述連接部中之焊料部。 In view of further improving the conduction reliability, it is preferable that the first electrode and the first electrode are observed along a laminated direction of the first electrode, the connecting portion, and the second electrode. When the electrodes are opposed to each other, 50% or more (more preferably 60% or more, and still more preferably 70% or more) of the area of the portion where the first electrode and the second electrode face each other are 100% or more. More preferably, it is 80% or more, and most preferably 90% or more, and the solder portion in the above connection portion is disposed.

就進一步提高導通可靠性之觀點而言,較佳為於沿與上述第1電極、上述連接部及上述第2電極之積層方向正交之方向觀察上述第1電極與上述第2電極之相互對向之部分時,於上述第1電極與上述第2電極之相互對向之部分配置有上述連接部中之焊料部之60%以上(更佳為70%以上,進而較佳為90%以上,尤佳為95%以上,最佳為99%以上)。 From the viewpoint of further improving the conduction reliability, it is preferable that the first electrode and the second electrode are opposed to each other in a direction orthogonal to a lamination direction of the first electrode, the connection portion, and the second electrode. In a portion where the first electrode and the second electrode face each other, 60% or more (more preferably 70% or more, further preferably 90% or more) of the solder portion in the connection portion is disposed. More preferably 95% or more, and most preferably 99% or more).

其次,對使用本發明之一實施形態之導電材料,製造連接構造體1之方法之一例進行說明。 Next, an example of a method of manufacturing the bonded structure 1 using the conductive material according to an embodiment of the present invention will be described.

首先,準備於表面(上表面)具有第1電極2a之第1連接對象構件2。其次,如圖2(a)所示,於第1連接對象構件2之表面上配置包含熱硬化性成分11B與複數個焊料粒子11A之導電材料11(第1步驟)。所使用之導電材料包含熱硬化性化合物與熱硬化劑作為熱硬化性成分11B。 First, the first connection target member 2 having the first electrode 2a on the front surface (upper surface) is prepared. Next, as shown in FIG. 2(a), a conductive material 11 including a thermosetting component 11B and a plurality of solder particles 11A is placed on the surface of the first connection member 2 (first step). The conductive material used contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B.

於第1連接對象構件2之設置有第1電極2a之表面上配置導電材料11。於配置導電材料11後,焊料粒子11A係配置於第1電極2a(線)上與未形成第1電極2a之區域(間隙)上之兩者。 The conductive material 11 is disposed on the surface of the first connection object member 2 on which the first electrode 2a is provided. After the conductive material 11 is disposed, the solder particles 11A are disposed on both the first electrode 2a (line) and the region (gap) where the first electrode 2a is not formed.

作為導電材料11之配置方法,並無特別限定,可列舉:利用分注器所進行之塗佈、網版印刷、及利用噴墨裝置所進行之噴出等。 The method of disposing the conductive material 11 is not particularly limited, and examples thereof include coating by a dispenser, screen printing, and ejection by an inkjet device.

又,準備於表面(下表面)具有第2電極3a之第2連接對象構件3。其次,如圖2(b)所示,於第1連接對象構件2之表面上之導電材料11中,於導電材料11之與第1連接對象構件2側相反側之表面上配置第2連接對象構件3(第2步驟)。於導電材料11之表面上,自第2電極3a側 配置第2連接對象構件3。此時,使第1電極2a與第2電極3a相對向。 Moreover, the second connection member 3 having the second electrode 3a on the front surface (lower surface) is prepared. Next, as shown in FIG. 2(b), in the conductive material 11 on the surface of the first connection member 2, the second connection object is placed on the surface of the conductive material 11 on the side opposite to the first connection target member 2 side. Member 3 (second step). On the surface of the conductive material 11, from the side of the second electrode 3a The second connection object member 3 is arranged. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.

其次,將導電材料11加熱至焊料粒子11A之熔點以上(第3步驟)。較佳為將導電材料11加熱至熱硬化性成分11B(熱硬化性化合物)之硬化溫度以上。於該加熱時,存在於未形成電極之區域之焊料粒子11A係聚集於第1電極2a與第2電極3a之間(自凝聚效應)。於使用導電膏而非導電膜之情形時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。又,焊料粒子11A發生熔融並相互接合。又,熱硬化性成分11B進行熱硬化。其結果為,如圖2(c)所示,利用導電材料11形成連接第1連接對象構件2與第2連接對象構件3之連接部4。利用導電材料11形成連接部4,藉由使複數個焊料粒子11A接合而形成焊料部4A,藉由使熱硬化性成分11B熱硬化而形成硬化物部4B。若焊料粒子11A充分地移動,則於未位於第1電極2a與第2電極3a間之焊料粒子11A之移動開始後,至焊料粒子11A於第1電極2a與第2電極3a之間之移動結束為止,可不將溫度保持為固定。 Next, the conductive material 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A (third step). It is preferable to heat the electrically conductive material 11 to the hardening temperature of the thermosetting component 11B (thermosetting compound). At the time of this heating, the solder particles 11A existing in the region where the electrode is not formed are collected between the first electrode 2a and the second electrode 3a (self-condensation effect). In the case where a conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Further, the solder particles 11A are melted and joined to each other. Further, the thermosetting component 11B is thermally cured. As a result, as shown in FIG. 2( c ), the connecting portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed by the conductive material 11 . The connection portion 4 is formed by the conductive material 11, and the solder portion 4A is formed by bonding a plurality of solder particles 11A, and the cured portion 4B is formed by thermally curing the thermosetting component 11B. When the solder particles 11A are sufficiently moved, the movement of the solder particles 11A between the first electrode 2a and the second electrode 3a is completed after the movement of the solder particles 11A between the first electrode 2a and the second electrode 3a is started. Until then, the temperature can be kept constant.

於本實施形態中,於上述第2步驟及上述第3步驟中,較佳為不進行加壓。於該情形時,對導電材料11施加第2連接對象構件3之重量。因此,於形成連接部4時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。再者,於上述第2步驟及上述第3步驟中之至少一者中,若進行加壓,則焊料粒子11A欲聚集於第1電極2a與第2電極3a之間之作用受到阻礙之傾向變高。 In the present embodiment, in the second step and the third step, it is preferable not to pressurize. In this case, the weight of the second connection member 3 is applied to the conductive material 11. Therefore, when the connection portion 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Further, in at least one of the second step and the third step, when the pressurization is performed, the tendency of the solder particles 11A to be concentrated between the first electrode 2a and the second electrode 3a is hindered. high.

又,於本實施形態中,由於不進行加壓,故而於使第2連接對象構件重疊於塗佈有導電材料之第1連接對象構件時,即便於第1連接對象構件之電極與第2連接對象構件之電極之對準偏移之狀態下,將第1連接對象構件與第2連接對象構件重疊之情形時,亦可對該偏移進行修正,將第1連接對象構件之電極與第2連接對象構件之電極連接(自對準效應)。其原因在於,關於在第1連接對象構件之電極與第2連接 對象構件之電極之間進行自凝聚之熔融之焊料,由於第1連接對象構件之電極與第2連接對象構件之電極之間之焊料與導電材料以外之成分相接觸的面積成為最小時於能量方面變得穩定,故而形成該成為最小之面積之連接構造即經對準之連接構造之力發揮作用。此時,較理想為導電材料未硬化,及於該溫度、時間下,導電材料之導電性粒子以外之成分之黏度足夠低。 In addition, in the present embodiment, when the second connection member is superposed on the first connection member to which the conductive material is applied, the electrode of the first connection member is connected to the second connection. When the first connection target member and the second connection target member are overlapped in the state in which the electrodes of the target member are offset, the offset can be corrected, and the electrode of the first connection target member and the second electrode can be corrected. The electrode connection (self-alignment effect) of the connected object member. The reason is that the electrode and the second connection are connected to the first connection target member. In the solder which is self-aggregating between the electrodes of the target member, the area where the solder between the electrode of the first connection member and the electrode of the second connection member is in contact with a component other than the conductive material is minimized in terms of energy. Since it becomes stable, the force which forms the connection structure which becomes the smallest area, ie, the structure of the alignment connection structure acts. In this case, it is preferable that the conductive material is not hardened, and at this temperature and time, the viscosity of the components other than the conductive particles of the conductive material is sufficiently low.

以上述方式而獲得圖1所示之連接構造體1。再者,可連續進行上述第2步驟與上述第3步驟。又,亦可於進行上述第2步驟後,使所獲得之第1連接對象構件2、導電材料11及第2連接對象構件3之積層體移動至加熱部,而進行上述第3步驟。為了進行上述加熱,可於加熱構件上配置上述積層體,亦可於加熱後之空間內配置上述積層體。 The connection structure 1 shown in Fig. 1 is obtained in the above manner. Furthermore, the second step and the third step described above can be continuously performed. Further, after the second step, the obtained third connection target member 2, the conductive material 11 and the second connection target member 3 may be moved to the heating unit to perform the third step. In order to perform the above heating, the laminated body may be disposed on the heating member, or the laminated body may be disposed in the heated space.

上述第3步驟中之上述加熱溫度較佳為140℃以上,更佳為160℃以上,且較佳為450℃以下,更佳為250℃以下,進而較佳為200℃以下。 The heating temperature in the third step is preferably 140 ° C or higher, more preferably 160 ° C or higher, and is preferably 450 ° C or lower, more preferably 250 ° C or lower, and still more preferably 200 ° C or lower.

作為上述第3步驟中之加熱方法,可列舉如下方法:使用回焊爐或使用烘箱將整個連接構造體加熱至焊料之熔點以上及熱硬化性成分之硬化溫度以上之方法;或僅對連接構造體之連接部局部地進行加熱之方法。 The heating method in the third step may be a method of heating the entire bonded structure to a temperature higher than a melting point of the solder or a hardening temperature of the thermosetting component by using a reflow furnace or using an oven; or only the connection structure A method in which the connection portion of the body is locally heated.

上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉:半導體晶片、半導體封裝、LED(Light Emitting Diode,發光二極體)晶片、LED封裝、電容器及二極體等電子零件、以及樹脂膜、印刷基板、軟性印刷基板、軟性扁平電纜、剛性軟性基板、玻璃環氧基板及玻璃基板等電路基板等電子零件等。上述第1、第2連接對象構件較佳為電子零件。 The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include semiconductor wafers, semiconductor packages, LED (Light Emitting Diode) wafers, LED packages, electronic components such as capacitors and diodes, and the like. Electronic components such as a resin film, a printed circuit board, a flexible printed circuit board, a flexible flat cable, a rigid flexible substrate, a glass epoxy substrate, and a glass substrate. The first and second connection target members are preferably electronic components.

較佳為上述第1連接對象構件及上述第2連接對象構件中之至少一者為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。較佳 為上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。樹脂膜、軟性印刷基板、軟性扁平電纜及剛性軟性基板具有柔軟性較高且相對輕量之性質。於此種連接對象構件之連接使用導電膜之情形時,有焊料不易聚集於電極上之傾向。相對於此,藉由使用導電膏,即便使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板,亦可藉由將焊料有效率地集中於電極上,而充分地提高電極間之導通可靠性。於使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板之情形時,與使用半導體晶片等其他連接對象構件之情形相比,可進一步有效地獲得基於不進行加壓之電極間之導通可靠性之提高效果。 At least one of the first connection target member and the second connection target member is preferably a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. Better The second connection target member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. The resin film, the flexible printed circuit board, the flexible flat cable, and the rigid flexible substrate have high flexibility and relatively lightweight properties. When a conductive film is used for the connection of such a connection member, there is a tendency that solder does not easily collect on the electrode. On the other hand, by using a conductive paste, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, it is possible to sufficiently improve the conduction between the electrodes by efficiently concentrating the solder on the electrodes. Sex. When a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, it is possible to more effectively obtain reliable conduction between electrodes based on non-pressurization as compared with the case of using other connection target members such as semiconductor wafers. Sexual improvement effect.

作為設置於上述連接對象構件之電極,可列舉:金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極、銀電極、SUS電極、及鎢電極等金屬電極。於上述連接對象構件為軟性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極、銀電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極、銀電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁所形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻雜有3價金屬元素之氧化銦及摻雜有3價金屬元素之氧化鋅等。作為上述3價金屬元素,可列舉:Sn、Al及Ga等。 Examples of the electrode provided in the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode. In the case where the connection target member is a flexible printed substrate, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode or a copper electrode. In the case where the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode or a tungsten electrode. Further, in the case where the electrode is an aluminum electrode, it may be an electrode formed only of aluminum, or an electrode having an aluminum layer on a surface layer of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like.

以下,列舉實施例及比較例具體地說明本發明。本發明並不僅限定於以下之實施例。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.

(1)具有環硫乙烷基及三骨架之熱硬化性化合物A之合成: (1) having an ethylenethio group and three Synthesis of thermosetting compound A of skeleton:

向具備攪拌機、冷卻機及溫度計之容器內,添加甲醇1100mL、及三甲基硫脲400g,而於容器內製備第1溶液。其後,將容器內之溫度保持為60℃。 To the vessel equipped with a stirrer, a cooler, and a thermometer, 1100 mL of methanol and 400 g of trimethylthiourea were added, and the first solution was prepared in a container. Thereafter, the temperature inside the vessel was maintained at 60 °C.

其次,一面攪拌保持為60℃之第1溶液,一面向該第1溶液中添加TEPIC-VL(日產化學工業公司製造)600g與甲苯3600ml,然後進而攪拌30分鐘,而獲得含環氧化合物之溶液。 Next, while stirring and maintaining the first solution at 60 ° C, 600 g of TEPIC-VL (manufactured by Nissan Chemical Industries, Ltd.) and 3,600 ml of toluene were added to the first solution, and further stirred for 30 minutes to obtain a solution containing an epoxy compound. .

其次,一面攪拌上述含環氧化合物之溶液,一面於氮氣流下,於60℃下使之反應5小時。其後,將容器內之溶液轉移至分液漏斗,靜置2小時,並將溶液分離。排出分液漏斗內之下方之溶液,並提取上清液。向所提取之上清液中添加甲苯950mL,進行攪拌,並靜置2小時。 Next, the solution containing the epoxy compound was stirred while reacting at 60 ° C for 5 hours under a nitrogen stream. Thereafter, the solution in the vessel was transferred to a separatory funnel, allowed to stand for 2 hours, and the solution was separated. The solution below the separatory funnel was drained and the supernatant was extracted. To the extracted supernatant was added 950 mL of toluene, stirred, and allowed to stand for 2 hours.

其次,向添加有甲苯之上清液中添加純水,重複進行攪拌、下方之溶液之排出,藉此進行洗淨。 Next, pure water was added to the supernatant containing toluene, and the mixture was repeatedly stirred and discharged to wash the solution.

其後,向上清液中添加硫酸鎂200g,並攪拌5分鐘。攪拌後,利用濾紙去除硫酸鎂,並將溶液分離。使用真空乾燥機,進行減壓乾燥,藉此去除所殘留之溶劑。以如上方式獲得具有環硫乙烷基及三骨架之熱硬化性化合物A。 Thereafter, 200 g of magnesium sulfate was added to the supernatant, and the mixture was stirred for 5 minutes. After stirring, magnesium sulfate was removed using a filter paper, and the solution was separated. The solvent remaining was removed by vacuum drying using a vacuum dryer. Obtained with an ethylenethio group and three in the above manner Thermosetting compound A of the skeleton.

將氯仿作為溶劑,進行所獲得之熱硬化性化合物A之1H-NMR(Nuclear Magnetic Resonance,核磁共振)之測定。其結果為,確認到環氧基轉化為環硫化物基。 The 1 H-NMR (Nuclear Magnetic Resonance) measurement of the obtained thermosetting compound A was carried out using chloroform as a solvent. As a result, it was confirmed that the epoxy group was converted into an episulfide group.

(2)具有環硫乙烷基及三骨架之熱硬化性化合物B之合成: (2) having an ethylene sulfide group and three Synthesis of thermosetting compound B of skeleton:

將TEPIC-VL(日產化學工業公司製造)變更為TEPIC-HP(日產化學工業公司製造),將容器內溫度變更為80℃,除此以外,以與熱硬化性化合物A同樣之方式獲得具有環硫乙烷基及三骨架之熱硬化性化合物B。 A TEPIC-VL (manufactured by Nissan Chemical Industries, Ltd.) was changed to TEPIC-HP (manufactured by Nissan Chemical Industries, Ltd.), and the temperature in the vessel was changed to 80 ° C, and a ring was obtained in the same manner as in the thermosetting compound A. Thioethane group and three Thermosetting compound B of the skeleton.

將氯仿作為溶劑,進行所獲得之熱硬化性化合物B之1H-NMR之測定。其結果為,確認到環氧基轉化為環硫化物基。所獲得之熱硬化性化合物B之熔點為150℃。 The 1 H-NMR measurement of the obtained thermosetting compound B was carried out using chloroform as a solvent. As a result, it was confirmed that the epoxy group was converted into an episulfide group. The obtained thermosetting compound B had a melting point of 150 °C.

熱硬化性化合物1:環氧化合物、ADEKA公司製造之「EP- 3300」、環氧當量160g/eq Thermosetting compound 1: epoxy compound, "EP-" manufactured by ADEKA 3300", epoxy equivalent 160g/eq

熱硬化性化合物2:環氧化合物、日產化學工業公司製造之「TEPIC-SS」、環氧當量100g/eq Thermosetting compound 2: epoxy compound, "TEPIC-SS" manufactured by Nissan Chemical Industries, Inc., epoxy equivalent 100g/eq

熱硬化性化合物3:環氧化合物、日產化學工業公司製造之「TEPIC-VL」、環氧當量135g/eq Thermosetting compound 3: epoxy compound, "TEPIC-VL" manufactured by Nissan Chemical Industries, Inc., epoxy equivalent 135 g/eq

熱硬化劑1:三羥甲基丙烷三(3-巰基丙酸酯)、SC有機化學公司製造之「TMMP」 Thermosetting agent 1: Trimethylolpropane tris(3-mercaptopropionate), "TMMP" manufactured by SC Organic Chemical Co., Ltd.

潛伏性環氧熱硬化劑1:T & K TOKA公司製造之「Fujicure 7000」 Latent epoxy heat hardener 1: "Fujicure 7000" manufactured by T & K TOKA

潛伏性環氧熱硬化劑2:Asahi Kasei E-Materials公司製造之「HXA-3922HP」 Latent epoxy heat hardener 2: "HXA-3922HP" manufactured by Asahi Kasei E-Materials

助焊劑1之合成: Synthesis of flux 1:

將戊二酸25重量份、戊二酸單甲酯25重量份放入至3口燒瓶中,於氮氣流下,於80℃下使之溶解。其後,添加苄胺57重量份,於150℃下於減壓下使之反應2小時,藉此獲得於25℃下為固體且具有醯胺基之助焊劑1。 25 parts by weight of glutaric acid and 25 parts by weight of monomethyl glutarate were placed in a 3-neck flask, and dissolved at 80 ° C under a nitrogen stream. Thereafter, 57 parts by weight of benzylamine was added, and the mixture was reacted at 150 ° C for 2 hours under reduced pressure, whereby a flux 1 which was solid at 25 ° C and had a mercapto group was obtained.

助焊劑2:戊二酸單甲酯、和光純藥工業公司製造 Flux 2: Monomethyl glutarate, manufactured by Wako Pure Chemical Industries, Ltd.

絕緣性粒子:平均粒徑30μm、CV值5%、軟化點330℃、積水化學工業公司製造之二乙烯苯交聯粒子 Insulating particles: an average particle diameter of 30 μm, a CV value of 5%, a softening point of 330 ° C, and a crosslinked particle of divinylbenzene produced by Sekisui Chemical Co., Ltd.

碳二醯亞胺化合物1:Carbodilite V02B(日清紡公司製造) Carbodilium imine compound 1: Carbodilite V02B (manufactured by Nisshinbo Co., Ltd.)

焊料粒子1之製作方法: How to make solder particles 1:

稱量SnBi焊料粒子(三井金屬公司製造之「DS-10」、平均粒徑(中值徑12μm))200g、具有異氰酸酯基之矽烷偶合劑(Shin-Etsu Silicones公司製造之「KBE-9007」)20g、及丙酮70g置於3口燒瓶中。一面於室溫下進行攪拌,一面添加作為焊料粒子表面之羥基與異氰酸酯基之反應觸媒之月桂酸二丁基錫0.25g,於攪拌下,於氮氣環境下於100℃ 下加熱2小時。其後,添加甲醇120g、及乙酸0.05g,於攪拌下,於氮氣環境下,於60℃下加熱1小時。 Weighed SnBi solder particles ("DS-10" manufactured by Mitsui Metals Co., Ltd., average particle diameter (median diameter: 12 μm)), 200 g, and a cyanide coupling agent having an isocyanate group ("KBE-9007" manufactured by Shin-Etsu Silicones Co., Ltd.) 20 g and 70 g of acetone were placed in a 3-neck flask. While stirring at room temperature, 0.25 g of dibutyltin laurate as a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder particles was added, and the mixture was stirred at 100 ° C under a nitrogen atmosphere. Heat for 2 hours. Thereafter, 120 g of methanol and 0.05 g of acetic acid were added, and the mixture was heated at 60 ° C for 1 hour under stirring in a nitrogen atmosphere.

其後,冷卻至室溫,利用濾紙對焊料粒子進行過濾,利用真空乾燥於室溫下進行脫溶劑1小時,而獲得焊料粒子。 Thereafter, the mixture was cooled to room temperature, and the solder particles were filtered by a filter paper, and desolventized by vacuum drying at room temperature for 1 hour to obtain solder particles.

將上述焊料粒子放入至3口燒瓶中,添加丙酮45g、己二酸單乙酯40g、及五氟苯磺酸二基銨0.2g,於攪拌下,於氮氣環境下於65℃下使之反應1小時後,進行真空乾燥,藉此進行脫溶劑。 The above solder particles were placed in a 3-necked flask, and 45 g of acetone, 40 g of monoethyl adipate, and pentafluorobenzenesulfonic acid were added. 0.2 g of the ammonium chloride was reacted under stirring at 65 ° C for 1 hour under a nitrogen atmosphere, and then vacuum-dried to carry out solvent removal.

其後,將上述焊料粒子放入至3口燒瓶中,添加丙酮85g、己二酸40g、及異丙醇鑭0.5g,於65℃下使之反應1小時後,冷卻至室溫,利用濾紙對焊料粒子進行過濾,並於濾紙上將焊料粒子利用丙酮洗淨2次,利用己烷洗淨1次後,利用真空乾燥於室溫下進行脫溶劑1小時。 Thereafter, the solder particles were placed in a 3-necked flask, and 85 g of acetone, 40 g of adipic acid, and 0.5 g of isopropyl isopropoxide were added, and the mixture was reacted at 65 ° C for 1 hour, and then cooled to room temperature to obtain a filter paper. The solder particles were filtered, and the solder particles were washed twice with acetone on a filter paper, washed once with hexane, and then desolventized by vacuum drying at room temperature for 1 hour.

利用球磨機將所獲得之焊料粒子壓碎後,以成為特定之CV值之方式選擇篩。 After the obtained solder particles are crushed by a ball mill, the sieve is selected so as to have a specific CV value.

藉此,獲得焊料粒子1。關於所獲得之焊料粒子1,為CV值20%、酸值:0.5mg/KOH。 Thereby, the solder particles 1 are obtained. Regarding the obtained solder particles 1, the CV value was 20%, and the acid value was 0.5 mg/KOH.

焊料粒子2之製作方法: How to make solder particles 2:

於濾紙上將焊料粒子利用己烷洗淨1次,除此以外,以與焊料粒子1同樣之方式,製作焊料粒子2。關於所獲得之焊料粒子2,為CV值20%、酸值:13mg/KOH。 The solder particles 2 were produced in the same manner as the solder particles 1 except that the solder particles were washed once with hexane on the filter paper. Regarding the obtained solder particles 2, the CV value was 20%, and the acid value was 13 mg/KOH.

焊料粒子A(SnBi焊料粒子、熔點139℃、三井金屬公司製造之「DS-10」、平均粒徑(中值徑12μm))、酸值:0.2mg/KOH Solder particles A (SnBi solder particles, melting point 139 ° C, "DS-10" manufactured by Mitsui Metals Co., Ltd., average particle diameter (median diameter: 12 μm)), acid value: 0.2 mg / KOH

(焊料粒子之CV值) (CV value of solder particles)

藉由雷射繞射式粒度分佈測定裝置(堀場製作所公司製造之「LA-920」)對CV值進行測定。 The CV value was measured by a laser diffraction type particle size distribution measuring apparatus ("LA-920" manufactured by Horiba, Ltd.).

(焊料粒子之酸值) (acid value of solder particles)

向乙醇中添加酚酞,相對於利用0.1N-KOH加以中和之溶液50ml,添加導電性粒子(焊料粒子)1g,利用超音波處理使之分散後,利用0.1N-KOH進行滴定,藉此求出酸值。 To the ethanol, phenolphthalein was added, and 50 g of a solution neutralized with 0.1 N-KOH was added, and 1 g of conductive particles (solder particles) was added, and the mixture was dispersed by ultrasonic treatment, and then titrated with 0.1 N-KOH. Acid value.

(實施例1~5及比較例1~3) (Examples 1 to 5 and Comparative Examples 1 to 3)

(1)各向異性導電膏之製作 (1) Production of anisotropic conductive paste

以下述表1所示之調配量調配下述表1所示之成分,而獲得各向異性導電膏。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste.

以如下方式製作連接構造體。 The connection structure was produced in the following manner.

(2)連接構造體(L/S=75μm/75μm)之製作 (2) Production of connection structure (L/S = 75 μm / 75 μm)

準備於上表面具有L/S為75μm/75μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之玻璃環氧基板(FR-4基板、厚度0.6mm)(第1連接對象構件)。又,準備於下表面具有L/S為75μm/75μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之軟性印刷基板(利用聚醯亞胺而形成之第2連接對象構件、厚度0.1mm)。 A glass epoxy substrate (FR-4 substrate, thickness: 0.6 mm) having a copper electrode pattern (having a thickness of 12 μm of a copper electrode) having an L/S of 75 μm/75 μm and an electrode length of 3 mm was prepared on the upper surface (first connection target member). Further, a flexible printed circuit board having a copper electrode pattern (thickness of a copper electrode of 12 μm) having an L/S of 75 μm/75 μm and an electrode length of 3 mm on the lower surface (a second connection member formed of polyimine) and having a thickness of 0.1 is prepared. Mm).

玻璃環氧基板與軟性印刷基板之重疊面積係設為1.5em×3mm,連接之電極數係設為75對。 The overlapping area of the glass epoxy substrate and the flexible printed substrate was set to 1.5 cm × 3 mm, and the number of connected electrodes was set to 75 pairs.

於上述玻璃環氧基板之上表面,於玻璃環氧基板之電極上以成為厚度100μm之方式塗敷剛製作後之各向異性導電膏,而形成各向異性導電膏層。其次,於各向異性導電膏層之上表面,以電極彼此相對向之方式積層上述軟性印刷基板,於軟性印刷基板之上表面載置加熱頭,於自室溫升溫至180℃之期間,使橫向之電極間之焊料粒子凝聚,進而於上下之電極間使焊料粒子凝聚、熔融後,進而於180℃下加熱10秒,使各向異性導電膏層硬化,而獲得連接構造體。此時,對各向異性導電膏層施加上述軟性印刷基板之重量與軟性印刷基板不會翹曲之程度之壓力。 On the upper surface of the glass epoxy substrate, the anisotropic conductive paste immediately after the application was applied to the electrode of the glass epoxy substrate so as to have a thickness of 100 μm to form an anisotropic conductive paste layer. Next, the flexible printed circuit board is laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other, and the heating head is placed on the upper surface of the flexible printed circuit board, and the temperature is raised from room temperature to 180 ° C to make the lateral direction. The solder particles between the electrodes are agglomerated, and the solder particles are agglomerated and melted between the upper and lower electrodes, and further heated at 180 ° C for 10 seconds to cure the anisotropic conductive paste layer to obtain a bonded structure. At this time, the pressure of the above-mentioned flexible printed circuit board and the degree to which the flexible printed circuit board does not warp are applied to the anisotropic conductive paste layer.

(評價) (Evaluation)

(1)黏度 (1) Viscosity

使用E型黏度計(東機產業公司製造之「TVE22L」),於25℃及5rpm之條件下對剛製作後之各向異性導電膏於25℃下之黏度(η25)進行測定。 The viscosity (η25) of the anisotropic conductive paste immediately after the production at 25 ° C was measured at 25 ° C and 5 rpm using an E-type viscometer ("TVE22L" manufactured by Toki Sangyo Co., Ltd.).

(2)保存穩定性 (2) preservation stability

將各向異性導電膏於23℃下保管24小時。保管後,使用E型黏度計(東機產業公司製造之「TVE22L」),於25℃及5rpm之條件下對各向異性導電膏於25℃下之黏度(η25)進行測定。藉由下述基準對保存穩定性進行判定。 The anisotropic conductive paste was stored at 23 ° C for 24 hours. After storage, the viscosity (η25) of the anisotropic conductive paste at 25 ° C was measured at 25 ° C and 5 rpm using an E-type viscometer ("TVE22L" manufactured by Toki Sangyo Co., Ltd.). The storage stability was determined by the following criteria.

[保存穩定性之判定基準] [Criteria for the determination of preservation stability]

○○:保管後之黏度/保管前之黏度未達1.2倍 ○○: Viscosity after storage/viscosity before storage is less than 1.2 times

○:保管後之黏度/保管前之黏度為1.2倍以上且未達1.5倍 ○: Viscosity after storage/viscosity before storage is 1.2 times or more and less than 1.5 times

△:保管後之黏度/保管前之黏度為1.5倍以上且未達2倍 △: viscosity after storage/viscosity before storage is 1.5 times or more and less than 2 times

×:保管後之黏度/保管前之黏度為2倍以上 ×: viscosity after storage/viscosity before storage is 2 times or more

(3)除導電性粒子以外之成分之流出防止性 (3) Outflow prevention of components other than conductive particles

於所獲得之連接構造體中,利用顯微鏡對自電極伸出之部分之長度進行觀察、測定,藉此評價除導電性粒子以外之成分之流出防止性。藉由下述基準對除導電性粒子以外之成分之流出防止性進行判定。 In the obtained connection structure, the length of the portion protruding from the electrode was observed and measured by a microscope, and the outflow prevention property of the components other than the conductive particles was evaluated. The outflow prevention property of the components other than the conductive particles was determined by the following criteria.

[除導電性粒子以外之成分之流出防止性之判定基準] [Criteria for determining the outflow prevention of components other than conductive particles]

○○:自電極伸出之部分之長度未達150μm ○○: The length of the portion protruding from the electrode is less than 150 μm.

○:自電極伸出之部分之長度為150μm以上且未達200μm ○: The length of the portion protruding from the electrode is 150 μm or more and less than 200 μm.

△:自電極伸出之部分之長度為200μm以上且未達300μm △: The length of the portion protruding from the electrode is 200 μm or more and less than 300 μm.

×:自電極伸出之部分之長度為300μm以上 ×: The length of the portion protruding from the electrode is 300 μm or more

(4)焊料部之厚度 (4) Thickness of the solder portion

藉由對所獲得之連接構造體進行剖面觀察,而對位於上下之電 極間之焊料部之厚度進行評價。 By taking a cross-sectional view of the obtained connected structure, the electricity is located above and below The thickness of the solder portion between the electrodes was evaluated.

(5)電極上之焊料之配置精度1 (5) Configuration accuracy of the solder on the electrode 1

於所獲得之連接構造體中,於沿第1電極、連接部及第2電極之積層方向觀察第1電極與第2電極之相互對向之部分時,對第1電極與第2電極之相互對向之部分之面積100%中之配置有連接部中之焊料部之面積的比率X進行評價。藉由下述基準對電極上之焊料之配置精度1進行判定。 In the obtained connection structure, when the first electrode and the second electrode face each other in the direction of lamination of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode are mutually The ratio X of the area of the solder portion in the connection portion among the 100% of the area of the portion was evaluated. The arrangement accuracy 1 of the solder on the electrode was determined by the following reference.

[電極上之焊料之配置精度1之判定基準] [Criteria for determining the placement accuracy of solder on the electrode 1]

○○:比率X為70%以上 ○○: ratio X is 70% or more

○:比率X為60%以上且未達70% ○: The ratio X is 60% or more and less than 70%

△:比率X為50%以上且未達60% △: the ratio X is 50% or more and less than 60%

×:比率X未達50% ×: The ratio X is less than 50%

(6)電極上之焊料之配置精度2 (6) Placement accuracy of the solder on the electrode 2

於所獲得之連接構造體中,於沿與第1電極、連接部及第2電極之積層方向正交之方向觀察第1電極與第2電極之相互對向之部分時,對在連接部中之焊料部100%中配置於第1電極與第2電極之相互對向之部分之連接部中之焊料部的比率Y進行評價。藉由下述基準對電極上之焊料之配置精度2進行判定。 In the connection structure obtained, when the first electrode and the second electrode face each other in a direction orthogonal to the lamination direction of the first electrode, the connection portion, and the second electrode, the connection portion is formed in the connection portion. In the solder portion 100%, the ratio Y of the solder portions in the connection portions of the first electrode and the second electrode facing each other is evaluated. The arrangement accuracy 2 of the solder on the electrode is determined by the following reference.

[電極上之焊料之配置精度2之判定基準] [Criteria for determining the placement accuracy of solder on the electrode 2]

○○:比率Y為99%以上 ○○: ratio Y is 99% or more

○:比率Y為90%以上且未達99% ○: The ratio Y is 90% or more and less than 99%

△:比率Y為70%以上且未達90% △: the ratio Y is 70% or more and less than 90%

×:比率Y未達70% ×: The ratio Y is less than 70%

(7)上下之電極間之導通可靠性 (7) Continuity reliability between the upper and lower electrodes

於所獲得之連接構造體(n=15個)中,分別藉由4端子法對上下之電極間之每1個連接部位之連接電阻進行測定。算出連接電阻之平均 值。再者,可藉由根據電壓=電流×電阻之關係,測定流通固定電流時之電壓而求出連接電阻。藉由下述基準對導通可靠性進行判定。 In the obtained connection structures (n = 15), the connection resistance of each connection portion between the upper and lower electrodes was measured by a 4-terminal method. Calculate the average of the connection resistance value. Furthermore, the connection resistance can be obtained by measuring the voltage at the time of flowing a fixed current based on the relationship of voltage=current×resistance. The conduction reliability is determined by the following criteria.

[導通可靠性之判定基準] [Determination of Conductivity Reliability]

○○:連接電阻之平均值為50mΩ以下 ○○: The average value of the connection resistance is 50mΩ or less

○:連接電阻之平均值超過50mΩ且為70mΩ以下 ○: The average value of the connection resistance exceeds 50 mΩ and is 70 mΩ or less.

△:連接電阻之平均值超過70mΩ且為100mΩ以下 △: The average value of the connection resistance exceeds 70 mΩ and is 100 mΩ or less.

×:連接電阻之平均值超過100mΩ,或產生連接不良 ×: The average value of the connection resistance exceeds 100mΩ, or a connection failure occurs.

(8)於橫向鄰接之電極間之絕緣可靠性 (8) Insulation reliability between electrodes adjacent in the lateral direction

於所獲得之連接構造體(n=15個)中,於85℃、濕度85%之環境中放置100小時後,對於橫向鄰接之電極間施加15V,並於25處測定電阻值。藉由下述基準對絕緣可靠性進行判定。 After allowing to stand in an environment of 85 ° C and a humidity of 85% for 100 hours in the obtained connection structure (n = 15 pieces), 15 V was applied between the electrodes adjacent in the lateral direction, and the resistance value was measured at 25 points. The insulation reliability was determined by the following criteria.

[絕緣可靠性之判定基準] [Determination of insulation reliability]

○○○:連接電阻之平均值為1014Ω以上 ○○○: The average value of the connection resistance is 10 14 Ω or more.

○○:連接電阻之平均值為108Ω以上且未達1014Ω ○○: The average value of the connection resistance is 10 8 Ω or more and less than 10 14 Ω

○:連接電阻之平均值為106Ω以上且未達108Ω ○: The average value of the connection resistance is 10 6 Ω or more and less than 10 8 Ω

△:連接電阻之平均值為105Ω以上且未達106Ω △: The average value of the connection resistance is 10 5 Ω or more and less than 10 6 Ω.

×:連接電阻之平均值未達105Ω ×: The average value of the connection resistance is less than 10 5 Ω

(9)上下之電極間之位置偏移 (9) Positional shift between the upper and lower electrodes

於所獲得之連接構造體中,於沿第1電極、連接部及第2電極之積層方向觀察第1電極與第2電極之相互對向之部分時,評價第1電極之中心線與第2電極之中心線是否一致、以及位置偏移之距離。藉由下述基準對上下之電極間之位置偏移進行判定。 In the obtained connection structure, when the first electrode and the second electrode are opposed to each other along the laminated direction of the first electrode, the connection portion, and the second electrode, the center line and the second electrode of the first electrode are evaluated. Whether the center line of the electrode is consistent and the distance of the positional offset. The positional shift between the upper and lower electrodes is determined by the following reference.

[上下之電極間之位置偏移之判定基準] [Criteria for determining the positional shift between the upper and lower electrodes]

○○:位置偏移未達15μm ○○: Position offset is less than 15μm

○:位置偏移為15μm以上且未達25μm ○: The positional shift is 15 μm or more and less than 25 μm.

△:位置偏移為25μm以上且未達40μm △: The positional shift is 25 μm or more and less than 40 μm.

×:位置偏移為40μm以上 ×: The positional shift is 40 μm or more

(10)耐熱性(耐熱黃變性) (10) Heat resistance (heat resistant yellowing)

於下述表1所示之調配成分中,準備調配有導電膏中之除焊料粒子以外之成分之調配物,而製作厚度0.6mm之硬化物之片材。於150℃下保管2000小時後,對測定波長400nm下之透過率進行測定,藉此評價耐熱性(耐熱黃變性)。藉由下述基準對耐熱性進行判定。 Among the blending components shown in the following Table 1, a formulation in which a component other than the solder particles in the conductive paste was prepared was prepared to prepare a cured sheet having a thickness of 0.6 mm. After storage at 150 ° C for 2,000 hours, the transmittance at a measurement wavelength of 400 nm was measured to evaluate heat resistance (heat-resistant yellowing). The heat resistance was determined by the following criteria.

[耐熱性之判定基準] [Criteria for determination of heat resistance]

○○:高溫保管後之透過率為93%以上 ○○: The transmittance after storage at high temperature is 93% or more

○:高溫保管後之透過率為90%以上且未達93% ○: The transmittance after storage at high temperature is 90% or more and less than 93%.

△:高溫保管後之透過率為87%以上且未達90% △: The transmittance after storage at high temperature is 87% or more and less than 90%.

×:不符合○○、○及△之基準 ×: does not meet the criteria of ○○, ○, and △

將結果示於下述表1。 The results are shown in Table 1 below.

於使用樹脂膜、軟性扁平電纜及剛性軟性基板代替軟性印刷基板之情形時,亦可見同樣之傾向。 The same tendency can be seen when a resin film, a flexible flat cable, and a rigid flexible substrate are used instead of the flexible printed substrate.

1‧‧‧連接構造體 1‧‧‧Connection structure

2‧‧‧第1連接對象構件 2‧‧‧1st connection object component

2a‧‧‧第1電極 2a‧‧‧1st electrode

3‧‧‧第2連接對象構件 3‧‧‧2nd connection object component

3a‧‧‧第2電極 3a‧‧‧2nd electrode

4‧‧‧連接部 4‧‧‧Connecting Department

4A‧‧‧焊料部 4A‧‧‧ solder department

4B‧‧‧硬化物部 4B‧‧‧ Hardened Parts

Claims (15)

一種導電材料,其包含:於導電部之外表面部分具有焊料之複數個導電性粒子、熱硬化性化合物、及熱硬化劑,且上述熱硬化性化合物包含具有環硫乙烷基及三骨架之熱硬化性化合物。 A conductive material comprising: a plurality of conductive particles having a solder on a surface portion of a conductive portion, a thermosetting compound, and a heat hardening agent, wherein the thermosetting compound comprises an ethylene sulfide group and three A thermosetting compound of the skeleton. 如請求項1之導電材料,其中上述具有環硫乙烷基及三骨架之熱硬化性化合物之熔點為140℃以上。 The conductive material of claim 1, wherein the above has an ethylene sulfide group and three The melting point of the thermosetting compound of the skeleton is 140 ° C or higher. 如請求項1或2之導電材料,其包含不同於具有環硫乙烷基及三骨架之熱硬化性化合物之熱硬化性化合物。 The conductive material of claim 1 or 2, which comprises a different from the group having an ethylene sulfide group and three A thermosetting compound of a thermosetting compound of a skeleton. 如請求項1或2之導電材料,其中上述導電性粒子之酸值為0.1mg/KOH以上且10mg/KOH以下。 The conductive material according to claim 1 or 2, wherein the conductive particles have an acid value of 0.1 mg/KOH or more and 10 mg/KOH or less. 如請求項1或2之導電材料,其包含助焊劑。 A conductive material according to claim 1 or 2, which comprises a flux. 如請求項5之導電材料,其中上述助焊劑為具有醯胺基與芳香族骨架的助焊劑,或者為具有醯胺基且為羧酸或羧酸酐與pKa為9.5以下之含胺基之化合物之反應物的助焊劑。 The conductive material of claim 5, wherein the flux is a flux having a mercaptoamine group and an aromatic skeleton, or a compound having a mercaptoamine group and being a carboxylic acid or a carboxylic acid anhydride and an amine group having a pKa of 9.5 or less. The flux of the reactants. 如請求項5之導電材料,其中上述助焊劑於25℃下為固體。 The conductive material of claim 5, wherein the flux is solid at 25 °C. 如請求項1或2之導電材料,其包含碳二醯亞胺化合物。 A conductive material according to claim 1 or 2, which comprises a carbodiimide compound. 如請求項1或2之導電材料,其中上述導電性粒子為焊料粒子。 The conductive material of claim 1 or 2, wherein the conductive particles are solder particles. 如請求項1或2之導電材料,其包含未附著於上述導電性粒子表面之絕緣性粒子。 The conductive material according to claim 1 or 2, which comprises insulating particles not attached to the surface of the conductive particles. 如請求項1或2之導電材料,其中上述導電性粒子之平均粒徑為1μm以上且40μm以下。 The conductive material according to claim 1 or 2, wherein the conductive particles have an average particle diameter of 1 μm or more and 40 μm or less. 如請求項1或2之導電材料,其中於導電材料100重量%中,上述 導電性粒子之含量為10重量%以上且80重量%以下。 The conductive material of claim 1 or 2, wherein the conductive material is 100% by weight, the above The content of the conductive particles is 10% by weight or more and 80% by weight or less. 如請求項1或2之導電材料,其於25℃下為液狀,且為導電膏。 The conductive material of claim 1 or 2, which is liquid at 25 ° C and is a conductive paste. 一種連接構造體,其包括:第1連接對象構件,其於表面具有至少1個第1電極;第2連接對象構件,其於表面具有至少1個第2電極;及連接部,其連接上述第1連接對象構件與上述第2連接對象構件;且上述連接部之材料為如請求項1至13中任一項之導電材料,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。 A connection structure comprising: a first connection target member having at least one first electrode on a surface thereof; a second connection target member having at least one second electrode on a surface thereof; and a connection portion connecting the above a connection target member and the second connection target member; wherein the connection portion is made of a conductive material according to any one of claims 1 to 13, wherein the first electrode and the second electrode are soldered by the connection portion Department and electrical connection. 如請求項14之連接構造體,其中於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之相互對向之部分時,於上述第1電極與上述第2電極之相互對向之部分之面積100%中的50%以上配置有上述連接部中之焊料部。 The connection structure according to claim 14, wherein the first electrode and the second electrode are opposed to each other along a direction of lamination of the first electrode, the connection portion, and the second electrode, and the first The solder portion in the connection portion is disposed at 50% or more of the area of the portion where the electrode and the second electrode face each other.
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