WO2017029993A1 - Electrically conductive material, and connecting structure - Google Patents

Electrically conductive material, and connecting structure Download PDF

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Publication number
WO2017029993A1
WO2017029993A1 PCT/JP2016/072776 JP2016072776W WO2017029993A1 WO 2017029993 A1 WO2017029993 A1 WO 2017029993A1 JP 2016072776 W JP2016072776 W JP 2016072776W WO 2017029993 A1 WO2017029993 A1 WO 2017029993A1
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WO
WIPO (PCT)
Prior art keywords
solder
electrode
conductive
particles
conductive material
Prior art date
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PCT/JP2016/072776
Other languages
French (fr)
Japanese (ja)
Inventor
敬士 久保田
高橋　英之
敬三 西岡
Original Assignee
積水化学工業株式会社
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Publication date
Application filed by 積水化学工業株式会社 filed Critical 積水化学工業株式会社
Priority to JP2016551862A priority Critical patent/JPWO2017029993A1/en
Priority to CN201680010595.6A priority patent/CN107251163A/en
Priority to KR1020177021433A priority patent/KR20180043191A/en
Publication of WO2017029993A1 publication Critical patent/WO2017029993A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G75/00—Macromolecular compounds obtained by reactions forming a linkage containing sulfur with or without nitrogen, oxygen, or carbon in the main chain of the macromolecule
    • C08G75/02—Polythioethers
    • C08G75/06—Polythioethers from cyclic thioethers
    • C08G75/08—Polythioethers from cyclic thioethers from thiiranes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C08K5/29—Compounds containing one or more carbon-to-nitrogen double bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02—Soldered or welded connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector

Definitions

  • the present invention relates to a conductive material including conductive particles having solder.
  • the present invention also relates to a connection structure using the conductive material.
  • Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known.
  • anisotropic conductive material conductive particles are dispersed in a binder.
  • the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
  • FOG Glass
  • COF Chip on Film
  • an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do.
  • a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
  • the following Patent Document 1 describes an anisotropic conductive material including conductive particles and a resin component that cannot be cured at the melting point of the conductive particles.
  • the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd ), Gallium (Ga), silver (Ag), thallium (Tl), and the like, and alloys of these metals.
  • Patent Document 1 a resin heating step for heating the anisotropic conductive resin to a temperature higher than the melting point of the conductive particles and at which the curing of the resin component is not completed, and a resin component curing step for curing the resin component The electrical connection between the electrodes is described.
  • Patent Document 1 describes that mounting is performed with the temperature profile shown in FIG. In Patent Document 1, the conductive particles melt in a resin component that is not completely cured at a temperature at which the anisotropic conductive resin is heated.
  • Patent Document 2 discloses an adhesive tape that includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. Yes.
  • This adhesive tape is in the form of a film, not a paste.
  • the transparency of the cured product may be low. Furthermore, the heat resistance of the cured product is low, and the cured product exposed to high temperatures may be discolored.
  • the outer surface portion of the conductive portion includes a plurality of conductive particles having solder, a thermosetting compound, and a thermosetting agent, and the thermosetting compound includes a thiirane group and A conductive material is provided that includes a thermosetting compound having a triazine skeleton.
  • the melting point of the thermosetting compound having a thiirane group and a triazine skeleton is 140 ° C. or higher.
  • the conductive material includes a thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton.
  • the acid value of the conductive particles is 0.1 mg / KOH or more and 10 mg / KOH or less.
  • the conductive material includes a flux.
  • the flux is a flux having an amide group and an aromatic skeleton, or has an amide group, and the carboxylic acid or carboxylic anhydride and pKa are It is a flux that is a reaction product with an amino group-containing compound that is 9.5 or less.
  • the flux is solid at 25 ° C.
  • the conductive material includes a carbodiimide compound.
  • the conductive particles are solder particles.
  • the conductive material includes insulating particles that are not attached to the surface of the conductive particles.
  • the conductive particles have an average particle diameter of 1 ⁇ m or more and 40 ⁇ m or less.
  • the content of the conductive particles is 10% by weight to 80% by weight in 100% by weight of the conductive material.
  • the conductive material is liquid at 25 ° C. and is a conductive paste.
  • a first connection target member having at least one first electrode on the surface
  • a second connection target member having at least one second electrode on the surface
  • the first A connection portion connecting the second connection target member and the second connection target member, wherein the material of the connection portion is the conductive material described above, and the first electrode and the second electrode Is provided that is electrically connected by a solder part in the connection part.
  • the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode.
  • the solder portion in the connection portion is arranged in 50% or more of the area of 100% of the portion where the first electrode and the second electrode face each other.
  • the conductive material according to the present invention includes a plurality of conductive particles including solder, a thermosetting compound, and a thermosetting agent on the outer surface portion of the conductive portion, and the thermosetting compound includes a thiirane group and a triazine. Since it contains a thermosetting compound having a skeleton, the cured product is excellent in transparency, and the cured product is excellent in heat resistance, and thus hardly discolored.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
  • 2A to 2C are cross-sectional views for explaining each step of an example of a method for manufacturing a connection structure using a conductive material according to an embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing a modification of the connection structure.
  • FIG. 4 is a cross-sectional view showing a first example of conductive particles that can be used as a conductive material.
  • FIG. 5 is a cross-sectional view showing a second example of conductive particles that can be used for the conductive material.
  • FIG. 6 is a cross-sectional view showing a third example of conductive particles that can be used for the conductive material.
  • the conductive material according to the present invention includes a plurality of conductive particles and a binder.
  • the conductive particles have a conductive part.
  • the conductive particles have solder on the outer surface portion of the conductive portion.
  • Solder is contained in the conductive part and is a part or all of the conductive part.
  • the binder is a component excluding conductive particles contained in the conductive material.
  • the conductive material according to the present invention contains a thermosetting component as the binder.
  • the thermosetting component includes a thermosetting compound and a thermosetting agent.
  • the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton.
  • the transparency of the cured product can be enhanced, and the cured product is excellent in heat resistance, so that the cured product is hardly discolored even when exposed to high temperatures. can do.
  • the solder in the conductive particles can be efficiently arranged on the electrode even if the electrode width is narrow.
  • the electrode width is narrow, there is a tendency that the solder of the conductive particles is difficult to gather on the electrode, but in the present invention, the solder can be sufficiently gathered on the electrode even if the electrode width is narrow.
  • the solder in the conductive particles is easily located between the upper and lower electrodes, and the solder in the conductive particles is used as the electrode. (Line) can be arranged efficiently.
  • the solder in the conductive particles is arranged more efficiently on the electrode.
  • the solder in the conductive particles it is difficult for a part of the solder in the conductive particles to be arranged in a region (space) where no electrode is formed, and the amount of solder arranged in a region where no electrode is formed can be considerably reduced.
  • the solder that is not located between the opposing electrodes can be efficiently moved between the opposing electrodes. Therefore, the conduction reliability between the electrodes can be improved.
  • cured material of an electroconductive material can be improved.
  • a conductive material is used for the optical semiconductor device, heat is generated during light irradiation, and a cured product of the conductive material is exposed to a high temperature.
  • the conductive material according to the present invention is excellent in the heat resistance of a cured product, it can be suitably used for an optical semiconductor device.
  • a thermosetting compound having a thiirane group and a triazine skeleton is used, the heat resistance of the cured material of the conductive material is increased.
  • the refractive index of the cured material of the conductive material can be increased.
  • the thermosetting compound since a thermosetting compound having a thiirane group and a triazine skeleton is used, the refractive index of the cured material of the conductive material is increased.
  • the thermosetting compound preferably includes a thermosetting compound having a triazine skeleton, and includes a thermosetting compound having a thiirane group and a triazine skeleton. More preferably, in the present invention, the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton.
  • the refractive index of the thermosetting compound is preferably 1.75 or more, more preferably 1.8 or more, preferably 1.9 or less, more preferably 1.85 or less.
  • cured material of an electroconductive material can be further raised as the refractive index of the said thermosetting compound is more than the said minimum.
  • the refractive index of the thermosetting compound can be measured using a Karnew precision refractometer.
  • a Karnew precision refractometer for example, “KPR-3000” manufactured by Shimadzu Corporation is used.
  • the water absorption rate of the cured material of the conductive material can be lowered.
  • the thermosetting compound since a thermosetting compound having a thiirane group and a triazine skeleton is used, the water absorption rate of the cured material of the conductive material is lowered.
  • the thermosetting compound preferably includes a thermosetting compound having a triazine skeleton, and includes a thermosetting compound having a thiirane group and a triazine skeleton.
  • the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton.
  • the water absorption rate of the thermosetting compound is preferably 2% or less, more preferably 1.5% or less.
  • cured material of an electroconductive material can be made still lower that the water absorption rate of the said thermosetting compound is below the said upper limit.
  • the minimum of the water absorption rate of the said thermosetting compound is not specifically limited.
  • the water absorption of the thermosetting compound may be 0.1% or more. From the viewpoint of further reducing the water absorption rate of the cured material of the conductive material, the water absorption rate of the thermosetting compound is preferably low.
  • thermosetting compound The water absorption rate of the thermosetting compound can be measured as follows.
  • the water absorption can be calculated by putting 5 g of the thermosetting compound in a moisture meter and measuring the weight after drying at 105 ° C. for 5 hours.
  • the moisture meter for example, “MOC63u” manufactured by Shimadzu Corporation is used.
  • the present invention it is possible to prevent displacement between the electrodes.
  • the electrode of the first connection target member and the electrode of the second connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment of the first connection target member and the second connection target member are overlaid, the shift is corrected and the first connection target member electrode and the second connection target are corrected.
  • the electrode of the member can be connected (self-alignment effect).
  • the conductive material is preferably liquid at 25 ° C., and preferably a conductive paste.
  • the viscosity ( ⁇ 25) at 25 ° C. of the conductive material is preferably 10 Pa ⁇ s or more, more preferably 50 Pa ⁇ s or more, and further preferably 100 Pa ⁇ s or more. Yes, preferably 800 Pa ⁇ s or less, more preferably 600 Pa ⁇ s or less, and even more preferably 500 Pa ⁇ s or less.
  • the viscosity ( ⁇ 25) can be appropriately adjusted depending on the type and amount of the compounding component. Further, the use of a filler can make the viscosity relatively high.
  • the viscosity ( ⁇ 25) can be measured using, for example, an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.) and the like at 25 ° C. and 5 rpm.
  • E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.) and the like at 25 ° C. and 5 rpm.
  • the conductive material can be used as a conductive paste and a conductive film.
  • the conductive paste is preferably an anisotropic conductive paste, and the conductive film is preferably an anisotropic conductive film. From the viewpoint of more efficiently arranging the solder in the conductive particles on the electrode, the conductive material is preferably a conductive paste.
  • the conductive material is preferably used for electrical connection of electrodes.
  • the conductive material is preferably a circuit connection material.
  • the conductive particles electrically connect the electrodes of the connection target member.
  • the conductive particles have solder on the outer surface portion of the conductive portion.
  • the conductive particles may be solder particles formed by solder.
  • the solder particles have solder on the outer surface portion of the conductive portion.
  • both the center part and the outer surface part of an electroconductive part are formed with the solder.
  • the solder particles are particles in which both the central portion of the solder particles and the conductive outer surface are solder.
  • the said electroconductive particle may have a base material particle and the electroconductive part arrange
  • the conductive particles are less likely to collect on the surface, and the solder joint property between the conductive particles is low, so the conductive particles that have moved onto the electrodes tend to move out of the electrodes, and the effect of suppressing displacement between the electrodes Tend to be lower. Therefore, the conductive particles are preferably solder particles formed by solder.
  • a carboxyl group or an amino group is present on the outer surface of the conductive particles (the outer surface of the solder). It is preferable that a carboxyl group is present, and an amino group is preferably present.
  • a group containing a carboxyl group or an amino group is shared on the outer surface of the conductive particle (the outer surface of the solder) via a Si—O bond, an ether bond, an ester bond or a group represented by the following formula (X). Bonding is preferred.
  • the group containing a carboxyl group or an amino group may contain both a carboxyl group and an amino group. In the following formula (X), the right end and the left end represent a binding site.
  • the bond form between the solder surface and the group containing a carboxyl group may not include a coordinate bond, and may not include a bond due to a chelate coordinate.
  • the conductive particle is a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group or an amino group ( Hereinafter, it is preferably obtained by reacting a hydroxyl group on the surface of the solder with a functional group capable of reacting with the hydroxyl group using a compound X). In the above reaction, a covalent bond is formed.
  • conductive particles in which a group containing a carboxyl group or an amino group is covalently bonded to the surface of the solder are easily obtained. It is also possible to obtain solder particles in which a group containing a carboxyl group or an amino group is covalently bonded to the surface of the solder via an ether bond or an ester bond.
  • the compound X can be chemically bonded to the surface of the solder in the form of a covalent bond.
  • Examples of the functional group capable of reacting with the hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, and a carbonyl group.
  • a hydroxyl group or a carboxyl group is preferred.
  • the functional group capable of reacting with the hydroxyl group may be a hydroxyl group or a carboxyl group.
  • Examples of the compound having a functional group capable of reacting with a hydroxyl group include levulinic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4- Aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, decanoic acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, Hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, vaccenic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanoic
  • Glutaric acid or glycolic acid is preferred. Only 1 type may be used for the compound which has the functional group which can react with the said hydroxyl group, and 2 or more types may be used together.
  • the compound having a functional group capable of reacting with the hydroxyl group is preferably a compound having at least one carboxyl group.
  • the compound X preferably has a flux action, and the compound X preferably has a flux action in a state of being bonded to the solder surface.
  • the compound having a flux action can remove the oxide film on the surface of the solder and the oxide film on the surface of the electrode.
  • the carboxyl group has a flux action.
  • Examples of the compound having a flux action include levulinic acid, glutaric acid, glycolic acid, succinic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3- Examples include methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid and 4-phenylbutyric acid. Glutaric acid or glycolic acid is preferred. As for the compound which has the said flux effect
  • the functional group capable of reacting with the hydroxyl group in the compound X is preferably a hydroxyl group or a carboxyl group.
  • the functional group capable of reacting with the hydroxyl group in the compound X may be a hydroxyl group or a carboxyl group.
  • the compound X preferably has at least two carboxyl groups.
  • the method for producing conductive particles includes, for example, using conductive particles and mixing the conductive particles, a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, a catalyst, and a solvent.
  • conductive particles in which a group containing a carboxyl group is covalently bonded to the surface of the solder can be easily obtained by the mixing step.
  • this electroconductive particle using electroconductive particle, this electroconductive particle, the compound which has the functional group and carboxyl group which can react with the said hydroxyl group, the said catalyst, and the said solvent are mixed, and it heats. It is preferable.
  • conductive particles in which a group containing a carboxyl group is covalently bonded to the surface of the solder can be obtained more easily.
  • the solvent examples include alcohol solvents such as methanol, ethanol, propanol and butanol, acetone, methyl ethyl ketone, ethyl acetate, toluene and xylene.
  • the solvent is preferably an organic solvent, and more preferably toluene. As for the said solvent, only 1 type may be used and 2 or more types may be used together.
  • the catalyst examples include p-toluenesulfonic acid, benzenesulfonic acid, 10-camphorsulfonic acid, and the like.
  • the catalyst is preferably p-toluenesulfonic acid.
  • the said catalyst only 1 type may be used and 2 or more types may be used together.
  • the heating temperature is preferably 90 ° C or higher, more preferably 100 ° C or higher, preferably 130 ° C or lower, more preferably 110 ° C or lower.
  • the conductive particles react with the isocyanate compound to the hydroxyl group on the surface of the solder using the isocyanate compound. It is preferable that it is obtained through the process of making it. In the above reaction, a covalent bond is formed.
  • the hydroxyl group on the surface of the solder with the isocyanate compound it is possible to easily obtain conductive particles in which the nitrogen atom of the group derived from the isocyanate group is covalently bonded to the surface of the solder.
  • a group derived from an isocyanate group can be chemically bonded to the surface of the solder in the form of a covalent bond.
  • a silane coupling agent can be easily reacted with a group derived from an isocyanate group. Since the conductive particles can be easily obtained, the group containing a carboxyl group is introduced by a reaction using a silane coupling agent having a carboxyl group, or the reaction using a silane coupling agent is performed. It is preferably introduced later by reacting a compound derived from a silane coupling agent with a compound having at least one carboxyl group.
  • the conductive particles are preferably obtained by reacting the isocyanate compound with a hydroxyl group on the surface of the solder using the isocyanate compound and then reacting a compound having at least one carboxyl group.
  • the compound having at least one carboxyl group preferably has a plurality of carboxyl groups.
  • isocyanate compound examples include diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI). Isocyanate compounds other than these may be used. After reacting this compound on the surface of the solder, the surface of the solder is represented by the formula (X) by reacting the residual isocyanate group and a compound having reactivity with the residual isocyanate group and having a carboxyl group. A carboxyl group can be introduced through the group to be formed.
  • MDI diphenylmethane-4,4'-diisocyanate
  • HDI hexamethylene diisocyanate
  • TDI toluene diisocyanate
  • IPDI isophorone diisocyanate
  • the isocyanate compound a compound having an unsaturated double bond and having an isocyanate group may be used. Examples include 2-acryloyloxyethyl isocyanate and 2-isocyanatoethyl methacrylate. After reacting the isocyanate group of this compound on the surface of the solder, reacting the compound having a functional group having reactivity with the remaining unsaturated double bond and having a carboxyl group, A carboxyl group can be introduced to the surface via a group represented by the formula (X).
  • silane coupling agent examples include 3-isocyanatopropyltriethoxysilane (“KBE-9007” manufactured by Shin-Etsu Silicone) and 3-isocyanatepropyltrimethoxysilane (“Y-5187” manufactured by MOMENTIVE). As for the said silane coupling agent, only 1 type may be used and 2 or more types may be used together.
  • Examples of the compound having at least one carboxyl group include levulinic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-amino Butyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, decanoic acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecane Examples include acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, vaccenic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanoic acid, arachidic acid
  • the carboxyl group of the compound having a plurality of carboxyl groups is reacted with the hydroxyl group on the surface of the solder.
  • the group containing can be left.
  • the conductive particles are used and the isocyanate compound is used to react the hydroxyl group on the surface of the solder with the isocyanate compound, and then the compound having at least one carboxyl group is reacted.
  • the conductive particles in which a group containing a carboxyl group is bonded to the surface of the solder via the group represented by the above formula (X) are obtained.
  • conductive particles in which a group containing a carboxyl group is introduced on the surface of the solder can be easily obtained by the above-described steps.
  • the following method can be given as a specific method for producing the conductive particles.
  • Conductive particles are dispersed in an organic solvent, and a silane coupling agent having an isocyanate group is added. Thereafter, a silane coupling agent is covalently bonded to the surface of the solder using a reaction catalyst between a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles.
  • a hydroxyl group is produced
  • Conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, a covalent bond is formed using a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles. Thereafter, the unsaturated double bond introduced is reacted with a compound having an unsaturated double bond and a carboxyl group.
  • the reaction catalyst for hydroxyl groups and isocyanate groups on the surface of the solder of the conductive particles includes tin catalysts (dibutyltin dilaurate, etc.), amine catalysts (triethylenediamine, etc.), carboxylate catalysts (lead naphthenate, potassium acetate, etc.) And a trialkylphosphine catalyst (such as triethylphosphine).
  • the compound having at least one carboxyl group is a compound represented by the following formula (1): Is preferred.
  • the compound represented by the following formula (1) has a flux action.
  • the compound represented by following formula (1) has a flux effect
  • X represents a functional group capable of reacting with a hydroxyl group
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • the organic group may contain a carbon atom, a hydrogen atom, and an oxygen atom.
  • the organic group may be a divalent hydrocarbon group having 1 to 5 carbon atoms.
  • the main chain of the organic group is preferably a divalent hydrocarbon group.
  • a carboxyl group or a hydroxyl group may be bonded to a divalent hydrocarbon group.
  • Examples of the compound represented by the above formula (1) include citric acid.
  • the compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B).
  • the compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B).
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (1A) is the same as R in the above formula (1).
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (1B) is the same as R in the above formula (1).
  • a group represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder.
  • a group represented by the following formula (2A) is preferably bonded to the surface of the solder, and more preferably a group represented by the following formula (2B) is bonded.
  • the left end portion represents a binding site.
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (2A) is the same as R in the above formula (1).
  • R represents a divalent organic group having 1 to 5 carbon atoms.
  • R in the above formula (2B) is the same as R in the above formula (1).
  • the molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1000 or less, and even more preferably 500 or less.
  • the molecular weight means a molecular weight that can be calculated from the structural formula when the compound having at least one carboxyl group is not a polymer and when the structural formula of the compound having at least one carboxyl group can be specified. Further, when the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight.
  • the conductive particles may have a conductive particle main body and an anionic polymer disposed on the surface of the conductive particle main body.
  • the conductive particles are preferably obtained by surface-treating the conductive particle body with an anionic polymer or a compound that becomes an anionic polymer.
  • the conductive particles are preferably a surface treated product of an anionic polymer or a compound that becomes an anionic polymer.
  • the anion polymer and the compound used as the said anion polymer only 1 type may respectively be used and 2 or more types may be used together.
  • the anionic polymer is a polymer having an acidic group.
  • an anionic polymer for example, a (meth) acrylic polymer copolymerized with (meth) acrylic acid, synthesized from a dicarboxylic acid and a diol, and having carboxyl groups at both ends are used.
  • Polyester polymer having a carboxyl group at both ends obtained by intermolecular dehydration condensation reaction of dicarboxylic acid, polyester polymer synthesized from dicarboxylic acid and diamine and having carboxyl group at both ends, and modified poval having carboxyl group (Nippon Synthetic Chemical Co., Ltd. "GOHSEX T") etc., and the method of making the carboxyl group of an anionic polymer react with the hydroxyl group of the surface of an electroconductive particle main body is mentioned.
  • anion portion of the anionic polymer examples include the carboxyl group, and other than that, a tosyl group (p—H 3 CC 6 H 4 S ( ⁇ O) 2 —), a sulfonate ion group (—SO 3 —) ), And phosphate ion groups (—PO 4 ⁇ ) and the like.
  • a compound having a functional group that reacts with a hydroxyl group on the surface of the conductive particle main body and a functional group that can be polymerized by addition or condensation reaction is used as another method for the surface treatment.
  • the method of polymerizing on the surface of an electroconductive particle main body is mentioned.
  • the functional group that reacts with the hydroxyl group on the surface of the conductive particle body include a carboxyl group and an isocyanate group, and the functional group that polymerizes by addition and condensation reactions includes a hydroxyl group, a carboxyl group, an amino group, and (meta ) An acryloyl group is mentioned.
  • the weight average molecular weight of the anionic polymer is preferably 2000 or more, more preferably 3000 or more, preferably 10,000 or less, more preferably 8000 or less.
  • the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, a sufficient amount of charge and flux properties can be introduced on the surface of the conductive particles. Thereby, the cohesiveness of electroconductive particle can be effectively improved at the time of conductive connection, and the oxide film on the surface of an electrode can be effectively removed at the time of connection of the connection object member.
  • the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, it is easy to dispose an anionic polymer on the surface of the conductive particle main body, and effectively increase the cohesiveness of the conductive particles during conductive connection. And the conductive particles can be more efficiently arranged on the electrode.
  • the weight average molecular weight indicates a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
  • the weight average molecular weight of the polymer obtained by surface-treating the conductive particle main body with a compound that becomes an anionic polymer is obtained by dissolving the solder in the conductive particles, and diluting the conductive particles with dilute hydrochloric acid that does not cause decomposition of the polymer. After removal, it can be determined by measuring the weight average molecular weight of the remaining polymer.
  • FIG. 4 is a cross-sectional view showing a first example of conductive particles that can be used as a conductive material.
  • the conductive particles 21 shown in FIG. 4 are solder particles.
  • the conductive particles 21 are entirely formed of solder.
  • the conductive particles 21 do not have base particles in the core, and are not core-shell particles.
  • both the center part and the outer surface part of an electroconductive part are formed with the solder.
  • FIG. 5 is a cross-sectional view showing a second example of conductive particles that can be used as a conductive material.
  • the electroconductive particle 31 shown in FIG. 5 is equipped with the base material particle 32 and the electroconductive part 33 arrange
  • the conductive portion 33 covers the surface of the base particle 32.
  • the conductive particles 31 are coated particles in which the surface of the base particle 32 is covered with the conductive portion 33.
  • the conductive portion 33 has a second conductive portion 33A and a solder portion 33B (first conductive portion).
  • the conductive particle 31 includes a second conductive portion 33A between the base particle 32 and the solder portion 33B. Therefore, the conductive particles 31 are composed of the base particle 32, the second conductive portion 33A disposed on the surface of the base particle 32, and the solder portion 33B disposed on the outer surface of the second conductive portion 33A.
  • FIG. 6 is a cross-sectional view showing a third example of conductive particles that can be used as a conductive material.
  • the conductive portion 33 in the conductive particle 31 has a two-layer structure.
  • the conductive particle 41 shown in FIG. 6 has a solder part 42 as a single-layer conductive part.
  • the conductive particles 41 include base particles 32 and solder portions 42 disposed on the surfaces of the base particles 32.
  • the substrate particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles.
  • the substrate particles are preferably substrate particles excluding metal, and are preferably resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles.
  • the substrate particles may be copper particles.
  • the base particle may have a core and a shell disposed on the surface of the core, or may be a core-shell particle.
  • the core may be an organic core, and the shell may be an inorganic shell.
  • the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; polycarbonate , Polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polysulfone, polyphenylene oxide , Polyacetal, polyimide, polyamideimide, polyether ether Tons, polyether sulfone, divinyl benzene polymer, and divinylbenzene copolymer,
  • polyolefin resins such as polyethylene, polypropylene,
  • the divinylbenzene copolymer examples include divinylbenzene-styrene copolymer and divinylbenzene- (meth) acrylic acid ester copolymer. Since the hardness of the resin particles can be easily controlled within a suitable range, the resin for forming the resin particles is a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group. It is preferably a coalescence.
  • the polymerizable monomer having an ethylenically unsaturated group includes a non-crosslinkable monomer and And a crosslinkable monomer.
  • non-crosslinkable monomer examples include styrene monomers such as styrene and ⁇ -methylstyrene; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl ( Alkyl (meth) acrylate compounds such as meth) acrylate and isobornyl (meth) acrylate; 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate, etc.
  • Oxygen atom-containing (meth) acrylate compounds Nitrile-containing monomers such as (meth) acrylonitrile; Vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether, and propyl vinyl ether; Acids such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stearate Vinyl ester compounds; unsaturated hydrocarbons such as ethylene, propylene, isoprene, and butadiene; halogen-containing monomers such as trifluoromethyl (meth) acrylate, pentafluoroethyl (meth) acrylate, vinyl chloride, vinyl fluoride, and chlorostyrene Etc.
  • Nitrile-containing monomers such as (meth) acrylonitrile
  • Vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether, and propyl vinyl ether
  • Acids such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stea
  • crosslinkable monomer examples include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, and dipenta Erythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) Polyfunctional (meth) acrylate compounds such as acrylate, (poly) tetramethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate; triallyl (iso) sia Silane-
  • (meth) acrylate indicates acrylate and methacrylate.
  • (meth) acryl refers to acrylic and methacrylic.
  • (meth) acryloyl refers to acryloyl and methacryloyl.
  • the resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of suspension polymerization in the presence of a radical polymerization initiator, and a method of polymerizing by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles.
  • examples of inorganic substances for forming the substrate particles include silica, alumina, barium titanate, zirconia, and carbon black.
  • the inorganic substance is preferably not a metal.
  • the particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle
  • examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
  • the organic-inorganic hybrid particles are preferably core-shell type organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core.
  • the core is preferably an organic core.
  • the shell is preferably an inorganic shell.
  • the base material particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell disposed on the surface of the organic core.
  • Examples of the material for forming the organic core include the resin for forming the resin particles described above.
  • Examples of the material for forming the inorganic shell include inorganic substances for forming the above-described base material particles.
  • the material for forming the inorganic shell is preferably silica.
  • the inorganic shell is preferably formed on the surface of the core by forming a metal alkoxide into a shell by a sol-gel method and then sintering the shell.
  • the metal alkoxide is preferably a silane alkoxide.
  • the inorganic shell is preferably formed of a silane alkoxide.
  • the particle diameter of the core is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less, still more preferably 40 ⁇ m or less, particularly preferably 30 ⁇ m or less, and most preferably 15 ⁇ m or less. It is.
  • the particle diameter of the core is not less than the above lower limit and not more than the above upper limit, conductive particles more suitable for electrical connection between electrodes can be obtained, and the base particles can be suitably used for the use of conductive particles. Become.
  • the particle diameter of the core is not less than the lower limit and not more than the upper limit
  • the contact area between the conductive particles and the electrodes is sufficiently large, and
  • the conductive portion is formed on the surface of the base particle, it is difficult to form aggregated conductive particles.
  • the distance between the electrodes connected via the conductive particles does not become too large, and the conductive portion is difficult to peel from the surface of the base particle.
  • the particle diameter of the core means a diameter when the core is a true sphere, and means a maximum diameter when the core is a shape other than a true sphere.
  • the particle diameter of a core means the average particle diameter which measured the core with arbitrary particle diameter measuring apparatuses. For example, a particle size distribution measuring machine using principles such as laser light scattering, electrical resistance value change, and image analysis after imaging can be used.
  • the thickness of the shell is preferably 100 nm or more, more preferably 200 nm or more, preferably 5 ⁇ m or less, more preferably 3 ⁇ m or less.
  • the thickness of the shell is an average thickness per base particle. The thickness of the shell can be controlled by controlling the sol-gel method.
  • the substrate particles are metal particles
  • examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium.
  • the metal particles are preferably copper particles.
  • the substrate particles are preferably not metal particles.
  • the particle diameter of the substrate particles is preferably 0.1 ⁇ m or more, more preferably 1 ⁇ m or more, further preferably 1.5 ⁇ m or more, particularly preferably 2 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less, more More preferably, it is 40 ⁇ m or less, more preferably 20 ⁇ m or less, still more preferably 10 ⁇ m or less, particularly preferably 5 ⁇ m or less, and most preferably 3 ⁇ m or less.
  • the particle diameter of the base material particles is equal to or larger than the lower limit, the contact area between the conductive particles and the electrodes is increased, so that the conduction reliability between the electrodes can be further improved and the connection is made through the conductive particles.
  • connection resistance between the formed electrodes can be further reduced.
  • the particle diameter of the substrate particles is not more than the above upper limit, the conductive particles are easily compressed, the connection resistance between the electrodes can be further reduced, and the distance between the electrodes can be further reduced. it can.
  • the particle diameter of the substrate particles indicates a diameter when the substrate particles are spherical, and indicates a maximum diameter when the substrate particles are not spherical.
  • the particle diameter of the substrate particles is particularly preferably 2 ⁇ m or more and 5 ⁇ m or less.
  • the distance between the electrodes can be further reduced, and even if the thickness of the conductive layer is increased, small conductive particles can be obtained. Can do.
  • the method for forming the conductive part on the surface of the base particle and the method for forming the solder part on the surface of the base particle or the surface of the second conductive part are not particularly limited.
  • Examples of the method for forming the conductive portion and the solder portion include a method by electroless plating, a method by electroplating, a method by physical collision, a method by mechanochemical reaction, a method by physical vapor deposition or physical adsorption, And a method of coating the surface of the substrate particles with a paste containing metal powder or metal powder and a binder. Electroless plating, electroplating or physical collision methods are preferred.
  • Examples of the method by physical vapor deposition include methods such as vacuum vapor deposition, ion plating, and ion sputtering. Further, in the method based on the physical collision, for example, a sheeter composer (manufactured by Tokuju Kogakusha Co., Ltd.) or the like is used.
  • the melting point of the base material particles is preferably higher than the melting points of the conductive part and the solder part.
  • the melting point of the substrate particles is preferably higher than 160 ° C, more preferably higher than 300 ° C, still more preferably higher than 400 ° C, and particularly preferably higher than 450 ° C.
  • the melting point of the substrate particles may be less than 400 ° C.
  • the melting point of the substrate particles may be 160 ° C. or less.
  • the softening point of the substrate particles is preferably 260 ° C. or higher.
  • the softening point of the substrate particles may be less than 260 ° C.
  • the conductive particles may have a single layer solder portion.
  • the conductive particles may have a plurality of layers of conductive parts (solder part, second conductive part). That is, in the conductive particles, two or more conductive portions may be stacked. When the conductive part has two or more layers, the conductive particles preferably have solder on the outer surface portion of the conductive part.
  • the solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower.
  • the solder part is preferably a metal layer (low melting point metal layer) having a melting point of 450 ° C. or lower.
  • the low melting point metal layer is a layer containing a low melting point metal.
  • the solder in the conductive particles is preferably metal particles having a melting point of 450 ° C. or lower (low melting point metal particles).
  • the low melting point metal particles are particles containing a low melting point metal.
  • the low melting point metal is a metal having a melting point of 450 ° C. or lower.
  • the melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower.
  • the solder in the conductive particles preferably contains tin.
  • the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, and still more preferably. It is 70% by weight or more, particularly preferably 90% by weight or more.
  • the tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
  • ICP-AES high-frequency inductively coupled plasma emission spectrometer
  • EDX-800HS fluorescent X-ray analyzer
  • the solder is melted and joined to the electrodes, and the solder conducts between the electrodes. For example, since the solder and the electrode are not in point contact but in surface contact, the connection resistance is lowered.
  • the use of conductive particles having solder on the outer surface of the conductive portion increases the bonding strength between the solder and the electrode, and as a result, the solder and the electrode are more unlikely to peel off, and the conduction reliability is effective. To be high.
  • the low melting point metal constituting the solder part and the solder particles is not particularly limited.
  • the low melting point metal is preferably tin or an alloy containing tin.
  • the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy.
  • the low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy because of its excellent wettability to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
  • the material constituting the solder is preferably a filler material having a liquidus of 450 ° C. or lower based on JIS Z3001: Welding terms.
  • the composition of the solder include a metal composition containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like.
  • the solder in the conductive particles is nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese. Further, it may contain a metal such as chromium, molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder and the electrode, the solder in the conductive particles preferably contains nickel, copper, antimony, aluminum, or zinc.
  • the content of these metals for increasing the bonding strength is preferably 0% in 100% by weight of the solder in the conductive particles. 0.0001% by weight or more, preferably 1% by weight or less.
  • the melting point of the second conductive part is preferably higher than the melting point of the solder part.
  • the melting point of the second conductive part is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, still more preferably more than 450 ° C, particularly preferably more than 500 ° C, most preferably Preferably it exceeds 600 degreeC. Since the solder part has a low melting point, it melts during conductive connection. It is preferable that the second conductive portion does not melt during conductive connection.
  • the conductive particles are preferably used by melting solder, preferably used by melting the solder part, and used without melting the solder part and melting the second conductive part. It is preferred that Since the melting point of the second conductive part is higher than the melting point of the solder part, it is possible to melt only the solder part without melting the second conductive part during conductive connection.
  • the absolute value of the difference between the melting point of the solder part and the melting point of the second conductive part exceeds 0 ° C, preferably 5 ° C or more, more preferably 10 ° C or more, still more preferably 30 ° C or more, particularly preferably Is 50 ° C. or higher, most preferably 100 ° C. or higher.
  • the second conductive part preferably contains a metal.
  • the metal which comprises the said 2nd electroconductive part is not specifically limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. As for the said metal, only 1 type may be used and 2 or more types may be used together.
  • the second conductive part is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer.
  • the conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer.
  • the thickness of the solder part is preferably 0.005 ⁇ m or more, more preferably 0.01 ⁇ m or more, preferably 10 ⁇ m or less, more preferably 1 ⁇ m or less, and still more preferably 0.3 ⁇ m or less.
  • the thickness of the solder part is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles are not too hard, and the conductive particles are sufficiently deformed at the time of connection between the electrodes. .
  • the average particle diameter of the conductive particles is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, further preferably 3 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 50 ⁇ m or less, still more preferably 40 ⁇ m or less, particularly preferably. Is 30 ⁇ m or less.
  • the conductive particles are not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and a large amount of the solder in the conductive particles can be arranged between the electrodes. It is easy and the conduction reliability is further increased.
  • the “average particle size” of the conductive particles indicates a number average particle size.
  • the average particle diameter of the conductive particles is obtained, for example, by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
  • the coefficient of variation of the particle diameter of the conductive particles is preferably 5% or more, more preferably 10% or more, preferably 40% or less, more preferably 30% or less.
  • the variation coefficient of the particle diameter is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrode.
  • the coefficient of variation of the particle diameter of the conductive particles may be less than 5%.
  • CV value (%) ( ⁇ / Dn) ⁇ 100 ⁇ : Standard deviation of particle diameter of conductive particles Dn: Average value of particle diameter of conductive particles
  • the shape of the conductive particles is not particularly limited.
  • the conductive particles may have a spherical shape or a shape other than a spherical shape such as a flat shape.
  • the acid value of the conductive particles is preferably 0.1 mg / KOH or more, more preferably 1 mg / KOH or more, preferably 10 mg / KOH or less, more preferably 7 mg / KOH or less.
  • the acid value is not less than the above lower limit and not more than the above upper limit, the heat resistance of the cured product is further enhanced, and discoloration of the cured product is further suppressed.
  • the acid value can be measured as follows. 1 g of conductive particles is added to 50 ml of a solution obtained by adding phenolphthalein to ethanol and neutralizing with 0.1N-KOH, and dispersing by ultrasonication, followed by titration with 0.1N-KOH.
  • the content of the conductive particles in 100% by weight of the conductive material is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, most preferably. It is 30% by weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less.
  • the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be arranged more efficiently on the electrodes, and more solder in the conductive particles is arranged between the electrodes. It is easy to do and the conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, the content of the conductive particles is preferably large.
  • thermosetting compound is a compound that can be cured by heating.
  • examples of the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds.
  • an epoxy compound or an episulfide compound is preferable.
  • the said thermosetting compound only 1 type may be used and 2 or more types may be used together.
  • the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton.
  • thermosetting compound having a triazine skeleton examples include triazine triglycidyl ether and the like. TEPIC series (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L, TEPIC-L, manufactured by Nissan Chemical Industries, Ltd.) PAS, TEPIC-VL, TEPIC-UC) and the like.
  • the thermosetting compound having the thiirane group and the triazine skeleton can be obtained, for example, by converting the epoxy group of the thermosetting compound having the triazine skeleton into a thiirane group. Methods for converting epoxy groups to thiirane groups are known.
  • the melting point of the thermosetting compound having a thiirane group and a triazine skeleton is preferably 140 ° C. or higher, more preferably 150 ° C. or higher. When the melting point is equal to or higher than the lower limit, the conductive particles are more efficiently arranged between the electrodes.
  • the melting point of the thermosetting compound having a thiirane group and a triazine skeleton is preferably equal to or higher than the melting point of the solder in the conductive particles.
  • the thermosetting compound may contain a thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton.
  • the thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton may be a thermosetting compound having no thiirane group or a thermosetting compound having no triazine skeleton. Or an epoxy compound.
  • the above-mentioned epoxy compound includes an aromatic epoxy compound. Crystalline epoxy compounds such as resorcinol-type epoxy compounds, naphthalene-type epoxy compounds, biphenyl-type epoxy compounds, and benzophenone-type epoxy compounds are preferred.
  • An epoxy compound that is solid at normal temperature (23 ° C.) and has a melting temperature equal to or lower than the melting point of the solder is preferable. The melting temperature is preferably 100 ° C. or lower, more preferably 80 ° C. or lower, and preferably 40 ° C. or higher.
  • the total content of the thermosetting compound in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight. Hereinafter, it is more preferably 98% by weight or less, further preferably 90% by weight or less, and particularly preferably 80% by weight or less.
  • the content of the thermosetting compound is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and the displacement between the electrodes can be further suppressed, The conduction reliability can be further improved. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting compound is large.
  • the content of the thermosetting compound having the thiirane group and the triazine skeleton is preferably 10% by weight or more, more preferably 20% by weight or more, and preferably 90% by weight or less. Preferably it is 80 weight% or less.
  • the content of the thermosetting compound having the thiirane group and the triazine skeleton is not less than the above lower limit and not more than the above upper limit, the transparency and heat resistance of the cured product are effectively increased.
  • thermosetting agent thermosets the thermosetting compound.
  • examples of the thermosetting agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation initiator (thermal cation curing agent), and a thermal radical generator.
  • the said thermosetting agent only 1 type may be used and 2 or more types may be used together.
  • the thermosetting agent is preferably an imidazole curing agent, a thiol curing agent, or an amine curing agent. Further, from the viewpoint of enhancing the storage stability when the thermosetting compound and the thermosetting agent are mixed, the thermosetting agent is preferably a latent curing agent.
  • the latent curing agent is preferably a latent imidazole curing agent, a latent thiol curing agent, or a latent amine curing agent.
  • the said thermosetting agent may be coat
  • the imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
  • the thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .
  • the solubility parameter of the thiol curing agent is preferably 9.5 or more, and preferably 12 or less.
  • the solubility parameter is calculated by the Fedors method.
  • the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
  • the amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5].
  • examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
  • thermal cation initiator examples include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents.
  • examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate.
  • examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate.
  • the sulfonium-based cationic curing agent examples include tri-p-tolylsulfonium hexafluorophosphate.
  • the thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides.
  • examples of the azo compound include azobisisobutyronitrile (AIBN).
  • examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
  • the reaction initiation temperature of the thermosetting agent is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 250 ° C. or lower, more preferably 200 ° C. or lower, still more preferably 150 ° C. Hereinafter, it is particularly preferably 140 ° C. or lower.
  • the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder is more efficiently arranged on the electrode.
  • the reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • the reaction initiation temperature of the thermosetting agent is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, More preferably, it is 10 ° C. or higher.
  • the reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
  • the content of the thermosetting agent is not particularly limited.
  • the content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, based on 100 parts by weight of the whole thermosetting compound.
  • the amount is preferably 100 parts by weight or less, more preferably 75 parts by weight or less.
  • the content of the thermosetting agent is not less than the above lower limit, it is easy to sufficiently cure the conductive material.
  • the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
  • the conductive paste preferably contains a flux. By using flux, the solder can be more effectively placed on the electrode.
  • the flux is not particularly limited. As the flux, a flux generally used for soldering or the like can be used.
  • Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Etc. As for the said flux, only 1 type may be used and 2 or more types may be used together.
  • Examples of the molten salt include ammonium chloride.
  • Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid.
  • Examples of the pine resin include activated pine resin and non-activated pine resin.
  • the flux is preferably an organic acid having two or more carboxyl groups, pine resin.
  • the flux may be an organic acid having two or more carboxyl groups, or pine resin.
  • the above rosins are rosins whose main component is abietic acid.
  • the flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
  • the flux is a flux having an amide group and an aromatic skeleton, or a reaction between an amide group and a carboxylic acid or carboxylic anhydride and an amino group-containing compound having a pKa of 9.5 or less. It is preferable that the flux is a product. In this case, the storage stability of the conductive material is increased, the components excluding the conductive particles are difficult to flow excessively at the time of connection between the electrodes, and it is possible to increase the adhesive force and increase the conduction reliability.
  • the flux is preferably a flux having an amide group and an aromatic skeleton, and the reaction of an amide group-containing compound having an amide group and a carboxylic acid or carboxylic acid anhydride with a pKa of 9.5 or less. It is also preferable that the flux is a product. As for the said flux, only 1 type may be used and 2 or more types may be used together.
  • the flux is a reaction product of a carboxylic acid or a carboxylic acid anhydride and an amino group-containing compound having a pKa of 9.5 or less
  • an amino group-containing compound having a pKa in a specific range is used. It is not possible to specify the range of reactants directly by structure or property.
  • the flux is preferably solid at 25 ° C.
  • the flux can be obtained, for example, by reacting a carboxylic acid or carboxylic acid anhydride with an amino group-containing compound.
  • carboxylic acid or carboxylic acid anhydride examples include succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, and malic acid.
  • amino group-containing compound examples include benzylamine, aniline and diphenylamine.
  • the amino group-containing compound is preferably an aromatic amine compound from the viewpoint of effectively increasing the storage stability of the conductive material and making it more difficult for components other than the conductive particles to flow during connection between the electrodes. .
  • the active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower, even more preferably 160. ° C or lower, more preferably 150 ° C or lower, still more preferably 140 ° C or lower.
  • the active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower.
  • the activation temperature (melting point) of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
  • the flux having an active temperature (melting point) of 80 ° C. or higher and 190 ° C. or lower includes succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point) 104 ° C.), dicarboxylic acids such as suberic acid (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), malic acid (melting point 130 ° C.) and the like.
  • the boiling point of the flux is preferably 200 ° C. or lower.
  • the melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, and more preferably 10 ° C or higher. More preferably.
  • the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
  • the flux may be dispersed in the conductive material or may be adhered on the surface of the conductive particles.
  • the solder can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the thermal conductivity, the temperature rise of the electrode portion is fast. At the stage where the melting point of the solder in the conductive particles is exceeded, the solder in the conductive particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed.
  • the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less.
  • the conductive material may not contain flux.
  • the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
  • the conductive material is made of insulating particles. It is preferable to contain. In the conductive material, the insulating particles may not be attached to the surface of the conductive particles. In the conductive material, the insulating particles are preferably present apart from the conductive particles.
  • the average particle diameter of the insulating particles is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, further preferably 25 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 75 ⁇ m or less, and even more preferably 50 ⁇ m or less.
  • the average particle diameter of the substrate particles is not less than the above lower limit and not more than the above upper limit, the interval between the connection target members connected by the cured material of the conductive material, and the connection target members connected by the solder in the conductive particles The interval becomes even more moderate.
  • the material for the insulating particles includes an insulating resin and an insulating inorganic substance.
  • said insulating resin the said resin quoted as resin for forming the resin particle which can be used as a base particle is mentioned.
  • As said insulating inorganic substance the said inorganic substance quoted as an inorganic substance for forming the inorganic particle which can be used as a base particle is mentioned.
  • the insulating resin that is the material of the insulating particles include polyolefins, (meth) acrylate polymers, (meth) acrylate copolymers, block polymers, thermoplastic resins, crosslinked thermoplastic resins, heat Examples thereof include curable resins and water-soluble resins.
  • thermoplastic resin examples include vinyl polymers and vinyl copolymers.
  • thermosetting resin an epoxy resin, a phenol resin, a melamine resin, etc.
  • water-soluble resin examples include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinyl pyrrolidone, polyethylene oxide, and methyl cellulose.
  • a water-soluble resin is preferable, and polyvinyl alcohol is more preferable.
  • the insulating inorganic material that is the material of the insulating particles include silica and organic-inorganic hybrid particles.
  • the particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle
  • the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
  • the content of the insulating particles is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, preferably 10% by weight or less, more preferably 5% by weight. It is as follows.
  • the conductive material may not contain insulating particles. When the content of the insulating particles is not less than the above lower limit and not more than the above upper limit, the interval between the connection target members connected by the cured material of the conductive material, and the interval between the connection target members connected by the solder in the conductive particles becomes even more reasonable.
  • the conductive material preferably contains a carbodiimide compound.
  • carbodiimide compound examples include 1,3-diisopropylcarbodiimide, bis (2,6-diisopropylphenyl) carbodiimide, 1-ethyl-3- (3-dimethylaminopropyl) carbodiimide hydrochloride, 1- (3- (dimethylamino) Propyl) -3-ethylcarbodiimide, N, N'-dicyclohexylcarbodiimide, N, N'-diisopropylcarbodiimide, N-cyclohexyl-N '-(2-morpholinoethyl) carbodiimide meth-p-toluenesulfonate, terminal isocyanate group
  • examples thereof include a modified polycarbodiimide compound, a cyclic carbodiimide compound, and a polycarbodiimide compound obtained by polymerizing diisocyanate in the presence of a carbodiimidization catalyst.
  • Examples of commercially available polycarbodiimide compounds include Carbodilite V02B, Carbodilite V04K, Carbodilite V05 (all manufactured by Nisshinbo Co., Ltd.) and the like.
  • the content of the carbodiimide compound in the conductive material 100% by weight is preferably 0.01% by weight or more, more preferably 0.1% by weight. It is above, Preferably it is 5 weight% or less, More preferably, it is 3 weight% or less.
  • the conductive material may be, for example, a coupling agent, a light-shielding agent, a reactive diluent, an antifoaming agent, a leveling agent, a filler, an extender, a softening agent, a plasticizer, a polymerization catalyst, a curing catalyst, or a coloring agent.
  • Various additives such as an agent, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, a lubricant, an antistatic agent and a flame retardant may be included.
  • connection structure includes a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first The connection object member and the connection part which has connected the said 2nd connection object member are provided.
  • the material of the connection portion is the conductive material described above.
  • the connecting portion is a cured product of the conductive material described above.
  • the connecting portion is formed of the conductive material described above.
  • the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
  • the method for manufacturing the connection structure includes the step of disposing the conductive material on the surface of the first connection target member having at least one first electrode on the surface, using the conductive material described above, A second connection target member having at least one second electrode on the surface opposite to the first connection target member side of the material, the first electrode and the second electrode A step of arranging the first connection target member and the second connection target member by connecting the first connection target member and the second connection target member by heating the conductive material to a temperature equal to or higher than the melting point of the solder in the conductive particles. Forming a portion with the conductive material, and electrically connecting the first electrode and the second electrode with a solder portion in the connection portion.
  • the conductive material is heated above the curing temperature of the thermosetting component and the thermosetting compound.
  • connection structure since a specific conductive material is used, solder in a plurality of conductive particles easily collects between the first electrode and the second electrode.
  • the solder can be efficiently arranged on the electrode (line).
  • a part of the solder is difficult to be disposed in a region (space) where no electrode is formed, and the amount of solder disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved.
  • a conductive film is used as the conductive material. It is preferable to use a conductive paste.
  • the thickness of the solder part between the electrodes is preferably 10 ⁇ m or more, more preferably 20 ⁇ m or more, preferably 100 ⁇ m or less, more preferably 80 ⁇ m or less.
  • the solder wetted area on the surface of the electrode is preferably 50% or more, more preferably 70% or more, and preferably 100% or less.
  • connection target member in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive material.
  • the weight of the target member is preferably added, and in the step of arranging the second connection target member and the step of forming the connection portion, the conductive material exceeds the weight force of the second connection target member. It is preferable that no pressure is applied. In these cases, the uniformity of the amount of solder can be further enhanced in the plurality of solder portions.
  • the thickness of the solder portion can be made even more effective, and a large amount of solder in a plurality of conductive particles tends to gather between the electrodes, and the solder in the plurality of conductive particles is more efficiently distributed on the electrode (line). Can be arranged. In addition, it is difficult for a part of the solder in the plurality of conductive particles to be disposed in the region (space) where the electrode is not formed, and the amount of solder in the conductive particle disposed in the region where the electrode is not formed is further increased. Can be reduced. Therefore, the conduction reliability between the electrodes can be further enhanced. In addition, the electrical connection between the laterally adjacent electrodes that should not be connected can be further prevented, and the insulation reliability can be further improved.
  • connection portion if the weight of the second connection target member is added to the conductive material without applying pressure, the connection portion is Solder arranged in a region (space) where no electrode is formed before it is formed is more likely to gather between the first electrode and the second electrode, and solder in a plurality of conductive particles can be It has also been found that it can be arranged more efficiently on the line).
  • a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
  • WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area.
  • the pressure is set to 0 MPa or more, preferably 1 MPa or more.
  • a predetermined pressure may be applied to the adhesive tape by its own weight.
  • WO2008 / 023452A1 it is described that the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed.
  • WO2008 / 023452A1 recognizes nothing about the importance of using a paste-like conductive paste instead of a film.
  • a conductive paste is used instead of a conductive film, it becomes easy to adjust the thicknesses of the connection part and the solder part depending on the amount of the conductive paste applied.
  • the conductive film in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is.
  • the melt viscosity of the conductive film compared with the conductive paste, the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder, and the aggregation of the solder tends to be hindered.
  • FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
  • connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3.
  • Part 4 is formed of the conductive material described above.
  • the conductive material includes conductive particles and a binder.
  • the conductive material includes solder particles as conductive particles.
  • the binder includes a thermosetting compound and a thermosetting agent. The thermosetting compound and the thermosetting agent are referred to as thermosetting components.
  • the connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
  • the first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface).
  • the second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface).
  • the first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A.
  • no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
  • connection structure 1 a plurality of solder particles gather between the first electrode 2 a and the second electrode 3 a, and after the plurality of solder particles melt, After the electrode surface wets and spreads, it solidifies to form the solder portion 4A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using solder particles, the solder portion 4A, the first electrode 2a, and the solder as compared with the case where the outer surface portion of the conductive portion is made of conductive particles such as nickel, gold or copper are used. The contact area between the portion 4A and the second electrode 3a increases. For this reason, the conduction
  • connection structure 1 shown in FIG. 1 all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a.
  • the connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X.
  • the connection part 4X has the solder part 4XA and the hardened
  • most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area
  • the solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA.
  • the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
  • connection structure 1 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
  • the first electrode 2a and the second electrode 2a are arranged in the stacking direction of the first electrode 2a, the connection portions 4 and 4X, and the second electrode 3a.
  • the solder portion in the connection portions 4 and 4X is at least 50% of the area of 100% of the portion facing the first electrode 2a and the second electrode 3a.
  • 4A and 4XA are preferably arranged.
  • the portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is seen.
  • the solder portion in the connection portion is preferably disposed.
  • the first electrode and the second electrode are opposed to each other in a direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode.
  • the portion where the first electrode and the second electrode face each other is 60% or more (more preferably 70% or more, more preferably 90%) of the solder portion in the connection portion. In particular, it is preferable that 95% or more, most preferably 99% or more) is disposed.
  • connection structure 1 using the conductive material Next, an example of a method for manufacturing the connection structure 1 using the conductive material according to the embodiment of the present invention will be described.
  • the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared.
  • a conductive material 11 including a thermosetting component 11B and a plurality of solder particles 11A is disposed on the surface of the first connection target member 2 (first Process).
  • the used conductive material contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B.
  • the conductive material 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided. After the conductive material 11 is disposed, the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
  • the arrangement method of the conductive material 11 is not particularly limited, and examples thereof include application by a dispenser, screen printing, and discharge by an inkjet device.
  • the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared.
  • the 2nd connection object member 3 is arrange
  • the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
  • the conductive material 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A (third step).
  • the conductive material 11 is heated above the curing temperature of the thermosetting component 11B (thermosetting compound).
  • the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect).
  • the thermosetting component 11B is thermoset. As a result, as shown in FIG.
  • connection portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed of the conductive material 11.
  • the connection part 4 is formed of the conductive material 11
  • the solder part 4A is formed by joining a plurality of solder particles 11A
  • the cured part 4B is formed by thermosetting the thermosetting component 11B. If the solder particles 11A are sufficiently moved, the first electrode 2a and the second electrode are moved after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
  • the weight of the second connection target member 3 is added to the conductive material 11. For this reason, when the connection part 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. In addition, if pressure is applied in at least one of the second step and the third step, the solder particles 11A tend to collect between the first electrode 2a and the second electrode 3a. The tendency to be inhibited becomes high.
  • the electrode of the first connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment of the electrodes of the second connection target member is shifted, the shift is corrected and the first connection target member is corrected. Can be connected to the electrode of the second connection target member (self-alignment effect). This is because the molten solder self-aggregated between the electrode of the first connection target member and the electrode of the second connection target member is the electrode of the first connection target member and the electrode of the second connection target member.
  • connection structure with alignment As the area where the solder and the other components of the conductive material are in contact with each other is minimized, the energy becomes more stable. Therefore, the force that makes the connection structure with alignment, which is the connection structure with the smallest area, works. Because. At this time, it is desirable that the conductive material is not cured, and that the viscosity of components other than the conductive particles of the conductive material is sufficiently low at that temperature and time.
  • connection structure 1 shown in FIG. 1 is obtained.
  • the second step and the third step may be performed continuously.
  • the laminated body of the 1st connection object member 2, the electrically-conductive material 11, and the 2nd connection object member 3 which are obtained is moved to a heating part, and the said 3rd connection object is carried out.
  • You may perform a process.
  • the laminate In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
  • the heating temperature in the third step is preferably 140 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
  • a heating method in the third step a method of heating the entire connection structure using a reflow furnace or an oven above the melting point of the solder and the curing temperature of the thermosetting compound, or a connection structure The method of heating only the connection part of these is mentioned.
  • the first and second connection target members are not particularly limited. Specifically as said 1st, 2nd connection object member, electronic components, such as a semiconductor chip, a semiconductor package, LED chip, LED package, a capacitor
  • the first and second connection target members are preferably electronic components.
  • At least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board.
  • the second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder not to gather on an electrode.
  • the conductive reliability between the electrodes can be efficiently collected by collecting the solder on the electrodes. Can be sufficiently increased.
  • the electrode provided on the connection target member examples include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode.
  • the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode.
  • the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode.
  • the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated
  • the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element.
  • the trivalent metal element include Sn, Al, and Ga.
  • thermosetting compound A having thiirane group and triazine skeleton In a container equipped with a stirrer, a cooler and a thermometer, 1100 mL of methanol and 400 g of trimethylthiourea were added to prepare a first solution in the container. Thereafter, the temperature in the container was kept at 60 ° C.
  • the epoxy compound-containing solution was allowed to react at 60 ° C. for 5 hours under a nitrogen flow while stirring. Thereafter, the solution in the container was transferred to a separating funnel and allowed to stand for 2 hours to separate the solution. The lower solution in the separatory funnel was discharged, and the supernatant was taken out. 950 mL of toluene was added to the removed supernatant, stirred and allowed to stand for 2 hours.
  • washing was performed by adding pure water to the supernatant liquid to which toluene was added, repeating stirring and discharging the lower solution.
  • thermosetting compound A having a thiirane group and a triazine skeleton was obtained.
  • thermosetting compound A 1 H-NMR measurement of the obtained thermosetting compound A was performed using chloroform as a solvent. As a result, it was confirmed that the epoxy group was converted to an episulfide group.
  • thermosetting compound B having thiirane group and triazine skeleton Similar to thermosetting compound A, except that TEPIC-VL (Nissan Chemical Industry Co., Ltd.) was changed to TEPIC-HP (Nissan Chemical Industry Co., Ltd.) and the temperature in the container was changed to 80 ° C. And the thermosetting compound B which has a triazine skeleton was obtained.
  • thermosetting compound B 1 H-NMR of the obtained thermosetting compound B was measured using chloroform as a solvent. As a result, it was confirmed that the epoxy group was converted to an episulfide group. The melting point of the obtained thermosetting compound B was 150 ° C.
  • Thermosetting compound 1 Epoxy compound, “EP-3300” manufactured by ADEKA, epoxy equivalent 160 g / eq
  • Thermosetting compound 2 Epoxy compound, “TEPIC-SS” manufactured by Nissan Chemical Industries, Ltd., epoxy equivalent 100 g / eq
  • Thermosetting compound 3 Epoxy compound, “TEPIC-VL” manufactured by Nissan Chemical Industries, epoxy equivalent 135 g / eq
  • Thermosetting agent 1 Trimethylolpropane tris (3-mercaptopropinate), “TMMP” manufactured by SC Organic Chemical Co., Ltd.
  • Latent epoxy thermosetting agent 1 “Fujicure 7000” manufactured by T & K TOKA
  • Latent epoxy thermosetting agent 2 “HXA-3922HP” manufactured by Asahi Kasei E-Materials
  • Insulating particles average particle size 30 ⁇ m, CV value 5%, softening point 330 ° C., Sekisui Chemical Co., Ltd., divinylbenzene crosslinked particles
  • Carbodiimide compound 1 Carbodilite V02B (Nisshinbo Co., Ltd.)
  • solder particles 1 200 g of SnBi solder particles (“DS-10” manufactured by Mitsui Kinzoku Co., Ltd., average particle diameter (median diameter 12 ⁇ m)), 20 g of a silane coupling agent having an isocyanate group (“KBE-9007” manufactured by Shin-Etsu Silicone), and 70 g of acetone. Weighed into a three-necked flask. While stirring at room temperature, 0.25 g of dibutyltin laurate, which is a reaction catalyst for hydroxyl groups and isocyanate groups on the surface of the solder particles, was added, and the mixture was heated at 100 ° C. for 2 hours under stirring in a nitrogen atmosphere. Thereafter, 120 g of methanol and 0.05 g of acetic acid were added, and the mixture was heated at 60 ° C. for 1 hour under stirring in a nitrogen atmosphere.
  • SnBi solder particles (“DS-10” manufactured by Mitsui Kinzoku Co., Ltd., average
  • solder particles were filtered with a filter paper, and the solvent was removed by vacuum drying at room temperature for 1 hour to obtain solder particles.
  • solder particles put the solder particles in a three-necked flask, add 45 g of acetone, 40 g of monoethyl adipate, and 0.2 g of dimesityl ammonium pentafluorobenzenesulfonate, and react for 1 hour at 65 ° C. in a nitrogen atmosphere with stirring. Then, the solvent was removed by vacuum drying.
  • solder particles are put into a three-necked flask, 85 g of acetone, 40 g of adipic acid, and 0.5 g of lanthanum isopropoxide are added, reacted at 65 ° C. for 1 hour, cooled to room temperature, and filtered with paper.
  • the solder particles were filtered, and the solder particles were washed twice with acetone and once with hexane on the filter paper, and then the solvent was removed by vacuum drying at room temperature for 1 hour.
  • solder particles 1 were obtained.
  • the obtained solder particles 1 had a CV value of 20% and an acid value of 0.5 mg / KOH.
  • solder particles 2 were produced in the same manner as the solder particles 1 except that the solder particles were washed once with hexane on the filter paper.
  • the obtained solder particles 2 had a CV value of 20% and an acid value of 13 mg / KOH.
  • Solder particles A (SnBi solder particles, melting point 139 ° C., “DS-10” manufactured by Mitsui Kinzoku Co., average particle diameter (median diameter 12 ⁇ m)), acid value: 0.2 mg / KOH
  • CV value of solder particles The CV value was measured with a laser diffraction particle size distribution analyzer (“LA-920” manufactured by Horiba, Ltd.).
  • connection structure was produced as follows.
  • FR ⁇ copper electrode pattern
  • first connection object member glass epoxy substrate (FR ⁇ ) having a copper electrode pattern (copper electrode thickness 12 ⁇ m) with L / S of 75 ⁇ m / 75 ⁇ m and electrode length of 3 mm on the upper surface 4 substrates, thickness 0.6 mm) (first connection object member)
  • a flexible printed circuit board (a second connection target member formed of polyimide, having a thickness of 0.1 ⁇ m) having a copper electrode pattern (copper electrode thickness 12 ⁇ m) having an L / S of 75 ⁇ m / 75 ⁇ m and an electrode length of 3 mm on the lower surface. 1 mm) was prepared.
  • the overlapping area of the glass epoxy substrate and the flexible printed circuit board was 1.5 cm ⁇ 3 mm, and the number of connected electrodes was 75 pairs.
  • the anisotropic conductive paste immediately after fabrication was applied on the upper surface of the glass epoxy substrate so as to have a thickness of 100 ⁇ m on the electrode of the glass epoxy substrate to form an anisotropic conductive paste layer.
  • the flexible printed circuit board is laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other, a heating head is placed on the upper surface of the flexible printed circuit board, and the temperature is raised from room temperature to 180 ° C., After agglomerating solder particles between the electrodes in the horizontal direction, and further aggregating and melting the solder particles between the upper and lower electrodes, further heating at 180 ° C. for 10 seconds to cure the anisotropic conductive paste layer and connect A structure was obtained. At this time, pressure is applied to the anisotropic conductive paste layer so that the weight of the flexible printed circuit board and the flexible printed circuit board do not warp.
  • Viscosity The viscosity ( ⁇ 25) at 25 ° C. of the anisotropic conductive paste immediately after production was measured using an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.) under the conditions of 25 ° C. and 5 rpm. .
  • Viscosity after storage / viscosity before storage is less than 1.2 times
  • Viscosity after storage / viscosity before storage is 1.2 times or more and less than 1.5 times
  • Viscosity after storage / before storage Viscosity of 1.5 times or more and less than 2 times
  • Viscosity after storage / viscosity before storage is 2 times or more
  • the length of the portion protruding from the electrode is less than 150 ⁇ m ⁇ : The length of the portion protruding from the electrode is 150 ⁇ m or more and less than 200 ⁇ m ⁇ : The length of the portion protruding from the electrode is 200 ⁇ m or more and less than 300 ⁇ m ⁇ : From the electrode The length of the protruding part is 300 ⁇ m or more
  • solder placement accuracy on electrode 1 In the obtained connection structure, when the portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is viewed, The ratio X of the area where the solder part in the connection part is arranged in the area of 100% of the part facing the second electrode was evaluated.
  • the solder placement accuracy 1 on the electrode was determined according to the following criteria.
  • Ratio X is 70% or more ⁇ : Ratio X is 60% or more and less than 70% ⁇ : Ratio X is 50% or more and less than 60% X: Ratio X is less than 50%
  • solder placement accuracy on electrode 2 In the obtained connection structure, when the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, The ratio Y of the solder part in the connection part arrange
  • the solder placement accuracy 2 on the electrode was determined according to the following criteria.
  • Ratio Y is 99% or more ⁇ : Ratio Y is 90% or more and less than 99% ⁇ : Ratio Y is 70% or more and less than 90% X: Ratio Y is less than 70%
  • connection resistance The average value of connection resistance is 10 14 ⁇ or more ⁇ : The average value of connection resistance is 10 8 ⁇ or more and less than 10 14 ⁇ ⁇ : The average value of connection resistance is 10 6 ⁇ or more and less than 10 8 ⁇ : The average value of the connection resistance is 10 5 ⁇ or more and less than 10 6 ⁇ ⁇ : The average value of the connection resistance is less than 10 5 ⁇
  • Misalignment is less than 15 ⁇ m ⁇ : Misalignment is 15 ⁇ m or more and less than 25 ⁇ m ⁇ : Misalignment is 25 ⁇ m or more and less than 40 ⁇ m ⁇ : Misalignment is 40 ⁇ m or more
  • Heat resistance heat-resistant yellowing
  • Table 1 a blend in which components other than the solder particles in the conductive paste were blended was prepared, and a cured sheet having a thickness of 0.6 mm was prepared. After storage at 150 ° C. for 2000 hours, heat resistance (heat-resistant yellowing) was evaluated by measuring transmittance at a measurement wavelength of 400 nm. The heat resistance was determined according to the following criteria.

Abstract

Provided is an electrically conductive material in which a hardened material has excellent transparency, and in which the hardened material has excellent heat resistance and is therefore resistant to discoloration. The electrically conductive material according to the present invention includes: a plurality of electrically conductive particles comprising solder on an outer surface part of an electrically conductive part; a thermosetting compound; and a thermosetting agent. The thermosetting compound includes thermosetting compounds comprising a thiirane group and a triazine skeleton.

Description

導電材料及び接続構造体Conductive material and connection structure
　本発明は、はんだを有する導電性粒子を含む導電材料に関する。また、本発明は、上記導電材料を用いた接続構造体に関する。 The present invention relates to a conductive material including conductive particles having solder. The present invention also relates to a connection structure using the conductive material.
　異方性導電ペースト及び異方性導電フィルム等の異方性導電材料が広く知られている。上記異方性導電材料では、バインダー中に導電性粒子が分散されている。 Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film are widely known. In the anisotropic conductive material, conductive particles are dispersed in a binder.
　上記異方性導電材料は、各種の接続構造体を得るために、例えば、フレキシブルプリント基板とガラス基板との接続（ＦＯＧ（Ｆｉｌｍ　ｏｎ　Ｇｌａｓｓ））、半導体チップとフレキシブルプリント基板との接続（ＣＯＦ（Ｃｈｉｐ　ｏｎ　Ｆｉｌｍ））、半導体チップとガラス基板との接続（ＣＯＧ（Ｃｈｉｐ　ｏｎ　Ｇｌａｓｓ））、並びにフレキシブルプリント基板とガラスエポキシ基板との接続（ＦＯＢ（Ｆｉｌｍ　ｏｎ　Ｂｏａｒｄ））等に使用されている。 In order to obtain various connection structures, for example, the anisotropic conductive material may be connected between a flexible printed circuit board and a glass substrate (FOG (Film on Glass)), or connected between a semiconductor chip and a flexible printed circuit board (COF ( (Chip on Film)), connection between a semiconductor chip and a glass substrate (COG (Chip on Glass)), connection between a flexible printed circuit board and a glass epoxy substrate (FOB (Film on Board)), and the like.
　上記異方性導電材料により、例えば、フレキシブルプリント基板の電極とガラスエポキシ基板の電極とを電気的に接続する際には、ガラスエポキシ基板上に、導電性粒子を含む異方性導電材料を配置する。次に、フレキシブルプリント基板を積層して、加熱及び加圧する。これにより、異方性導電材料を硬化させて、導電性粒子を介して電極間を電気的に接続して、接続構造体を得る。 For example, when electrically connecting the electrode of the flexible printed circuit board and the electrode of the glass epoxy substrate by the anisotropic conductive material, an anisotropic conductive material containing conductive particles is disposed on the glass epoxy substrate. To do. Next, a flexible printed circuit board is laminated, and heated and pressurized. As a result, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connection structure.
　上記異方性導電材料の一例として、下記の特許文献１には、導電性粒子と、該導電性粒子の融点で硬化が完了しない樹脂成分とを含む異方性導電材料が記載されている。上記導電性粒子としては、具体的には、錫（Ｓｎ）、インジウム（Ｉｎ）、ビスマス（Ｂｉ）、銀（Ａｇ）、銅（Ｃｕ）、亜鉛（Ｚｎ）、鉛（Ｐｂ）、カドミウム（Ｃｄ）、ガリウム（Ｇａ）、銀（Ａｇ）及びタリウム（Ｔｌ）等の金属や、これらの金属の合金が挙げられている。 As an example of the anisotropic conductive material, the following Patent Document 1 describes an anisotropic conductive material including conductive particles and a resin component that cannot be cured at the melting point of the conductive particles. Specifically, the conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd ), Gallium (Ga), silver (Ag), thallium (Tl), and the like, and alloys of these metals.
　特許文献１では、上記導電性粒子の融点よりも高く、かつ上記樹脂成分の硬化が完了しない温度に、異方性導電樹脂を加熱する樹脂加熱ステップと、上記樹脂成分を硬化させる樹脂成分硬化ステップとを経て、電極間を電気的に接続することが記載されている。また、特許文献１には、特許文献１の図８に示された温度プロファイルで実装を行うことが記載されている。特許文献１では、異方性導電樹脂が加熱される温度にて硬化が完了しない樹脂成分内で、導電性粒子が溶融する。 In Patent Document 1, a resin heating step for heating the anisotropic conductive resin to a temperature higher than the melting point of the conductive particles and at which the curing of the resin component is not completed, and a resin component curing step for curing the resin component The electrical connection between the electrodes is described. Patent Document 1 describes that mounting is performed with the temperature profile shown in FIG. In Patent Document 1, the conductive particles melt in a resin component that is not completely cured at a temperature at which the anisotropic conductive resin is heated.
　下記の特許文献２には、熱硬化性樹脂を含む樹脂層と、はんだ粉と、硬化剤とを含み、上記はんだ粉と上記硬化剤とが上記樹脂層中に存在する接着テープが開示されている。この接着テープは、フィルム状であり、ペースト状ではない。 Patent Document 2 below discloses an adhesive tape that includes a resin layer containing a thermosetting resin, solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. Yes. This adhesive tape is in the form of a film, not a paste.
特開２００４－２６０１３１号公報JP 2004-260131 A ＷＯ２００８／０２３４５２Ａ１WO2008 / 023452A1
　従来のはんだ粉や、はんだ層を表面に有する導電性粒子を含む異方性導電ペーストでは、硬化物の透明性が低いことがある。さらに、硬化物の耐熱性が低く、高温下に晒された硬化物が変色することがある。 In conventional anisotropic conductive paste containing solder powder or conductive particles having a solder layer on the surface, the transparency of the cured product may be low. Furthermore, the heat resistance of the cured product is low, and the cured product exposed to high temperatures may be discolored.
　本発明の目的は、硬化物の透明性に優れており、硬化物が耐熱性に優れているので変色し難い導電材料を提供することである。また、本発明の目的は、上記導電材料を用いた接続構造体を提供することである。 An object of the present invention is to provide a conductive material which is excellent in transparency of a cured product and hardly changes in color because the cured product is excellent in heat resistance. Another object of the present invention is to provide a connection structure using the conductive material.
　本発明の広い局面によれば、導電部の外表面部分に、はんだを有する複数の導電性粒子と、熱硬化性化合物と、熱硬化剤とを含み、前記熱硬化性化合物が、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含む、導電材料が提供される。 According to a wide aspect of the present invention, the outer surface portion of the conductive portion includes a plurality of conductive particles having solder, a thermosetting compound, and a thermosetting agent, and the thermosetting compound includes a thiirane group and A conductive material is provided that includes a thermosetting compound having a triazine skeleton.
　本発明に係る導電材料のある特定の局面では、前記チイラン基及びトリアジン骨格を有する熱硬化性化合物の融点が１４０℃以上である。 In a specific aspect of the conductive material according to the present invention, the melting point of the thermosetting compound having a thiirane group and a triazine skeleton is 140 ° C. or higher.
　本発明に係る導電材料のある特定の局面では、前記導電材料は、チイラン基及びトリアジン骨格を有する熱硬化性化合物とは異なる熱硬化性化合物を含む。 In a specific aspect of the conductive material according to the present invention, the conductive material includes a thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton.
　本発明に係る導電材料のある特定の局面では、前記導電性粒子の酸価が０．１ｍｇ／ＫＯＨ以上、１０ｍｇ／ＫＯＨ以下である。 In a specific aspect of the conductive material according to the present invention, the acid value of the conductive particles is 0.1 mg / KOH or more and 10 mg / KOH or less.
　本発明に係る導電材料のある特定の局面では、前記導電材料は、フラックスを含む。 In a specific aspect of the conductive material according to the present invention, the conductive material includes a flux.
　本発明に係る導電材料のある特定の局面では、前記フラックスが、アミド基と芳香族骨格とを有するフラックスであるか、又は、アミド基を有し、かつカルボン酸又はカルボン酸無水物とｐＫａが９．５以下であるアミノ基含有化合物との反応物であるフラックスである。 In a specific aspect of the conductive material according to the present invention, the flux is a flux having an amide group and an aromatic skeleton, or has an amide group, and the carboxylic acid or carboxylic anhydride and pKa are It is a flux that is a reaction product with an amino group-containing compound that is 9.5 or less.
　本発明に係る導電材料のある特定の局面では、前記フラックスが、２５℃で固体である。 In a specific aspect of the conductive material according to the present invention, the flux is solid at 25 ° C.
　本発明に係る導電材料のある特定の局面では、前記導電材料は、カルボジイミド化合物を含む。 In a specific aspect of the conductive material according to the present invention, the conductive material includes a carbodiimide compound.
　本発明に係る導電材料のある特定の局面では、前記導電性粒子は、はんだ粒子である。 In a specific aspect of the conductive material according to the present invention, the conductive particles are solder particles.
　本発明に係る導電材料のある特定の局面では、前記導電材料は、前記導電性粒子の表面に付着していない絶縁性粒子を含む。 In a specific aspect of the conductive material according to the present invention, the conductive material includes insulating particles that are not attached to the surface of the conductive particles.
　本発明に係る導電材料のある特定の局面では、前記導電性粒子の平均粒子径が１μｍ以上、４０μｍ以下である。 In a specific aspect of the conductive material according to the present invention, the conductive particles have an average particle diameter of 1 μm or more and 40 μm or less.
　本発明に係る導電材料のある特定の局面では、前記導電材料１００重量％中、前記導電性粒子の含有量が１０重量％以上、８０重量％以下である。 In a specific aspect of the conductive material according to the present invention, the content of the conductive particles is 10% by weight to 80% by weight in 100% by weight of the conductive material.
　本発明に係る導電材料のある特定の局面では、前記導電材料は、２５℃で液状であり、導電ペーストである。 In a specific aspect of the conductive material according to the present invention, the conductive material is liquid at 25 ° C. and is a conductive paste.
　本発明の広い局面によれば、少なくとも１つの第１の電極を表面に有する第１の接続対象部材と、少なくとも１つの第２の電極を表面に有する第２の接続対象部材と、前記第１の接続対象部材と前記第２の接続対象部材とを接続している接続部とを備え、前記接続部の材料が、上述した導電材料であり、前記第１の電極と前記第２の電極とが前記接続部中のはんだ部により電気的に接続されている、接続構造体が提供される。 According to a wide aspect of the present invention, a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first A connection portion connecting the second connection target member and the second connection target member, wherein the material of the connection portion is the conductive material described above, and the first electrode and the second electrode Is provided that is electrically connected by a solder part in the connection part.
　本発明に係る接続構造体のある特定の局面では、前記第１の電極と前記接続部と前記第２の電極との積層方向に前記第１の電極と前記第２の電極との対向し合う部分をみたときに、前記第１の電極と前記第２の電極との対向し合う部分の面積１００％中の５０％以上に、前記接続部中のはんだ部が配置されている。 In a specific aspect of the connection structure according to the present invention, the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode. When the portion is viewed, the solder portion in the connection portion is arranged in 50% or more of the area of 100% of the portion where the first electrode and the second electrode face each other.
　本発明に係る導電材料は、導電部の外表面部分に、はんだを有する複数の導電性粒子と、熱硬化性化合物と、熱硬化剤とを含み、上記熱硬化性化合物が、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含むので、硬化物の透明性に優れており、硬化物が耐熱性に優れているので変色し難い。 The conductive material according to the present invention includes a plurality of conductive particles including solder, a thermosetting compound, and a thermosetting agent on the outer surface portion of the conductive portion, and the thermosetting compound includes a thiirane group and a triazine. Since it contains a thermosetting compound having a skeleton, the cured product is excellent in transparency, and the cured product is excellent in heat resistance, and thus hardly discolored.
図１は、本発明の一実施形態に係る導電材料を用いて得られる接続構造体を模式的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention. 図２（ａ）～（ｃ）は、本発明の一実施形態に係る導電材料を用いて、接続構造体を製造する方法の一例の各工程を説明するための断面図である。2A to 2C are cross-sectional views for explaining each step of an example of a method for manufacturing a connection structure using a conductive material according to an embodiment of the present invention. 図３は、接続構造体の変形例を示す断面図である。FIG. 3 is a cross-sectional view showing a modification of the connection structure. 図４は、導電材料に使用可能な導電性粒子の第１の例を示す断面図である。FIG. 4 is a cross-sectional view showing a first example of conductive particles that can be used as a conductive material. 図５は、導電材料に使用可能な導電性粒子の第２の例を示す断面図である。FIG. 5 is a cross-sectional view showing a second example of conductive particles that can be used for the conductive material. 図６は、導電材料に使用可能な導電性粒子の第３の例を示す断面図である。FIG. 6 is a cross-sectional view showing a third example of conductive particles that can be used for the conductive material.
　以下、本発明の詳細を説明する。 Hereinafter, the details of the present invention will be described.
　（導電材料）
　本発明に係る導電材料は、複数の導電性粒子と、バインダーとを含む。上記導電性粒子は、導電部を有する。上記導電性粒子は、導電部の外表面部分に、はんだを有する。はんだは、導電部に含まれ、導電部の一部又は全部である。上記バインダーは、上記導電材料に含まれる導電性粒子を除く成分である。 (Conductive material)
The conductive material according to the present invention includes a plurality of conductive particles and a binder. The conductive particles have a conductive part. The conductive particles have solder on the outer surface portion of the conductive portion. Solder is contained in the conductive part and is a part or all of the conductive part. The binder is a component excluding conductive particles contained in the conductive material.
　本発明に係る導電材料は、上記バインダーとして、熱硬化性成分を含む。上記熱硬化性成分は、熱硬化性化合物と、熱硬化剤とを含む。 The conductive material according to the present invention contains a thermosetting component as the binder. The thermosetting component includes a thermosetting compound and a thermosetting agent.
　本発明に係る導電材料では、上記熱硬化性化合物が、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含む。 In the conductive material according to the present invention, the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton.
　本発明では、上記の構成が備えられているので、硬化物の透明性を高めることができ、更に硬化物が耐熱性に優れているので、硬化物が高温下に晒されても変色し難くすることができる。 In the present invention, since the above-described configuration is provided, the transparency of the cured product can be enhanced, and the cured product is excellent in heat resistance, so that the cured product is hardly discolored even when exposed to high temperatures. can do.
　さらに、本発明では、電極幅が狭くても導電性粒子におけるはんだを電極上に効率的に配置することができる。電極幅が狭い場合に、電極上に導電性粒子のはんだを寄せ集めにくい傾向があるが、本発明では、電極幅が狭くても、電極上にはんだを充分に寄せ集めることができる。本発明では、上記の構成が備えられているので、電極間を電気的に接続した場合に、導電性粒子におけるはんだが、上下の対向した電極間に位置しやすく、導電性粒子におけるはんだを電極（ライン）上に効率的に配置することができる。また、本発明では、電極幅が広いと、導電性粒子におけるはんだが電極上により一層効率的に配置される。 Furthermore, in the present invention, the solder in the conductive particles can be efficiently arranged on the electrode even if the electrode width is narrow. When the electrode width is narrow, there is a tendency that the solder of the conductive particles is difficult to gather on the electrode, but in the present invention, the solder can be sufficiently gathered on the electrode even if the electrode width is narrow. In the present invention, since the above configuration is provided, when the electrodes are electrically connected, the solder in the conductive particles is easily located between the upper and lower electrodes, and the solder in the conductive particles is used as the electrode. (Line) can be arranged efficiently. In the present invention, when the electrode width is wide, the solder in the conductive particles is arranged more efficiently on the electrode.
　また、導電性粒子におけるはんだの一部が、電極が形成されていない領域（スペース）に配置され難く、電極が形成されていない領域に配置されるはんだの量をかなり少なくすることができる。本発明では、対向する電極間に位置していないはんだを、対向する電極間に効率的に移動させることができる。従って、電極間の導通信頼性を高めることができる。しかも、接続されてはならない横方向に隣接する電極間の電気的な接続を防ぐことができ、絶縁信頼性を高めることができる。 Also, it is difficult for a part of the solder in the conductive particles to be arranged in a region (space) where no electrode is formed, and the amount of solder arranged in a region where no electrode is formed can be considerably reduced. In the present invention, the solder that is not located between the opposing electrodes can be efficiently moved between the opposing electrodes. Therefore, the conduction reliability between the electrodes can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
　さらに、本発明では、導電材料の硬化物の耐熱性を高めることができる。特に、光半導体装置に導電材料を用いた場合に、光照射時に発熱し、導電材料の硬化物が高温下に晒される。本発明に係る導電材料は、硬化物の耐熱性に優れているので、光半導体装置に好適に用いることができる。特に、チイラン基及びトリアジン骨格を有する熱硬化性化合物を用いているので、導電材料の硬化物の耐熱性が高くなる。 Furthermore, in this invention, the heat resistance of the hardened | cured material of an electroconductive material can be improved. In particular, when a conductive material is used for the optical semiconductor device, heat is generated during light irradiation, and a cured product of the conductive material is exposed to a high temperature. Since the conductive material according to the present invention is excellent in the heat resistance of a cured product, it can be suitably used for an optical semiconductor device. In particular, since a thermosetting compound having a thiirane group and a triazine skeleton is used, the heat resistance of the cured material of the conductive material is increased.
　また、本発明では、導電材料の硬化物の屈折率を高めることができる。特に、本発明では、チイラン基及びトリアジン骨格を有する熱硬化性化合物を用いているので、導電材料の硬化物の屈折率が高くなる。導電材料の硬化物の屈折率をより一層高める観点からは、上記熱硬化性化合物は、トリアジン骨格を有する熱硬化性化合物を含むことが好ましく、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含むことがより好ましく、本発明では、上記熱硬化性化合物は、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含む。上記熱硬化性化合物の屈折率は、好ましくは１．７５以上、より好ましくは１．８以上であり、好ましくは１．９以下、より好ましくは１．８５以下である。上記熱硬化性化合物の屈折率が、上記下限以上であると、導電材料の硬化物の屈折率をより一層高めることができる。 In the present invention, the refractive index of the cured material of the conductive material can be increased. In particular, in the present invention, since a thermosetting compound having a thiirane group and a triazine skeleton is used, the refractive index of the cured material of the conductive material is increased. From the viewpoint of further increasing the refractive index of the cured material of the conductive material, the thermosetting compound preferably includes a thermosetting compound having a triazine skeleton, and includes a thermosetting compound having a thiirane group and a triazine skeleton. More preferably, in the present invention, the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton. The refractive index of the thermosetting compound is preferably 1.75 or more, more preferably 1.8 or more, preferably 1.9 or less, more preferably 1.85 or less. The refractive index of the hardened | cured material of an electroconductive material can be further raised as the refractive index of the said thermosetting compound is more than the said minimum.
　上記熱硬化性化合物の屈折率は、カルニュー精密屈折計を用いて測定することができる。上記カルニュー精密屈折計としては、例えば、島津製作所社製「ＫＰＲ－３０００」が用いられる。 The refractive index of the thermosetting compound can be measured using a Karnew precision refractometer. As the Kalnew precision refractometer, for example, “KPR-3000” manufactured by Shimadzu Corporation is used.
　さらに、本発明では、導電材料の硬化物の吸水率を低くすることができる。特に、本発明では、チイラン基及びトリアジン骨格を有する熱硬化性化合物を用いているので、導電材料の硬化物の吸水率が低くなる。導電材料の硬化物の吸水率をより一層低くする観点からは、上記熱硬化性化合物は、トリアジン骨格を有する熱硬化性化合物を含むことが好ましく、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含むことがより好ましく、本発明では、上記熱硬化性化合物は、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含む。上記熱硬化性化合物の吸水率は、好ましくは２％以下、より好ましくは１．５％以下である。上記熱硬化性化合物の吸水率が、上記上限以下であると、導電材料の硬化物の吸水率をより一層低くすることができる。上記熱硬化性化合物の吸水率の下限は、特に限定されない。上記熱硬化性化合物の吸水率は、０．１％以上であってもよい。導電材料の硬化物の吸水率をより一層低くする観点からは、上記熱硬化性化合物の吸水率は、低い方が好ましい。 Furthermore, in the present invention, the water absorption rate of the cured material of the conductive material can be lowered. In particular, in the present invention, since a thermosetting compound having a thiirane group and a triazine skeleton is used, the water absorption rate of the cured material of the conductive material is lowered. From the viewpoint of further reducing the water absorption rate of the cured material of the conductive material, the thermosetting compound preferably includes a thermosetting compound having a triazine skeleton, and includes a thermosetting compound having a thiirane group and a triazine skeleton. More preferably, in the present invention, the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton. The water absorption rate of the thermosetting compound is preferably 2% or less, more preferably 1.5% or less. The water absorption rate of the hardened | cured material of an electroconductive material can be made still lower that the water absorption rate of the said thermosetting compound is below the said upper limit. The minimum of the water absorption rate of the said thermosetting compound is not specifically limited. The water absorption of the thermosetting compound may be 0.1% or more. From the viewpoint of further reducing the water absorption rate of the cured material of the conductive material, the water absorption rate of the thermosetting compound is preferably low.
　上記熱硬化性化合物の吸水率は、以下のようにして測定することができる。 The water absorption rate of the thermosetting compound can be measured as follows.
　熱硬化性化合物５ｇを水分計に入れ、１０５℃で５時間乾燥させた後の重量を測定することにより、吸水率を算出することができる。上記水分計としては、例えば、島津製作所社製「ＭＯＣ６３ｕ」が用いられる。 The water absorption can be calculated by putting 5 g of the thermosetting compound in a moisture meter and measuring the weight after drying at 105 ° C. for 5 hours. As the moisture meter, for example, “MOC63u” manufactured by Shimadzu Corporation is used.
　さらに、本発明では、電極間の位置ずれを防ぐことができる。本発明では、導電材料を上面に配置した第１の接続対象部材に、第２の接続対象部材を重ね合わせた際に、第１の接続対象部材の電極と第２の接続対象部材の電極とのアライメントがずれた状態で、第１の接続対象部材と第２の接続対象部材とが重ね合わされた場合でも、そのずれを補正して、第１の接続対象部材の電極と第２の接続対象部材の電極とを接続させることができる（セルフアライメント効果）。 Furthermore, in the present invention, it is possible to prevent displacement between the electrodes. In the present invention, when the second connection target member is superimposed on the first connection target member having the conductive material disposed on the upper surface, the electrode of the first connection target member and the electrode of the second connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment of the first connection target member and the second connection target member are overlaid, the shift is corrected and the first connection target member electrode and the second connection target are corrected. The electrode of the member can be connected (self-alignment effect).
　はんだを電極上により一層効率的に配置するために、上記導電材料は、２５℃で液状であることが好ましく、導電ペーストであることが好ましい。はんだを電極上により一層効率的に配置するために、上記導電材料の２５℃での粘度（η２５）は好ましくは１０Ｐａ・ｓ以上、より好ましくは５０Ｐａ・ｓ以上、更に好ましくは１００Ｐａ・ｓ以上であり、好ましくは８００Ｐａ・ｓ以下、より好ましくは６００Ｐａ・ｓ以下、更に好ましくは５００Ｐａ・ｓ以下である。上記粘度（η２５）は、配合成分の種類及び配合量により適宜調整可能である。また、フィラーの使用により、粘度を比較的高くすることができる。 In order to arrange the solder more efficiently on the electrode, the conductive material is preferably liquid at 25 ° C., and preferably a conductive paste. In order to arrange the solder more efficiently on the electrode, the viscosity (η25) at 25 ° C. of the conductive material is preferably 10 Pa · s or more, more preferably 50 Pa · s or more, and further preferably 100 Pa · s or more. Yes, preferably 800 Pa · s or less, more preferably 600 Pa · s or less, and even more preferably 500 Pa · s or less. The viscosity (η25) can be appropriately adjusted depending on the type and amount of the compounding component. Further, the use of a filler can make the viscosity relatively high.
　上記粘度（η２５）は、例えば、Ｅ型粘度計（東機産業社製「ＴＶＥ２２Ｌ」）等を用いて、２５℃及び５ｒｐｍの条件で測定可能である。 The viscosity (η25) can be measured using, for example, an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.) and the like at 25 ° C. and 5 rpm.
　上記導電材料は、導電ペースト及び導電フィルム等として使用され得る。上記導電ペーストは異方性導電ペーストであることが好ましく、上記導電フィルムは異方性導電フィルムであることが好ましい。導電性粒子におけるはんだを電極上により一層効率的に配置する観点からは、上記導電材料は、導電ペーストであることが好ましい。上記導電材料は、電極の電気的な接続に好適に用いられる。上記導電材料は、回路接続材料であることが好ましい。 The conductive material can be used as a conductive paste and a conductive film. The conductive paste is preferably an anisotropic conductive paste, and the conductive film is preferably an anisotropic conductive film. From the viewpoint of more efficiently arranging the solder in the conductive particles on the electrode, the conductive material is preferably a conductive paste. The conductive material is preferably used for electrical connection of electrodes. The conductive material is preferably a circuit connection material.
　以下、上記導電材料に含まれる各成分を説明する。 Hereinafter, each component contained in the conductive material will be described.
　（導電性粒子）
　上記導電性粒子は、接続対象部材の電極間を電気的に接続する。上記導電性粒子は、導電部の外表面部分にはんだを有する。上記導電性粒子は、はんだにより形成されたはんだ粒子であってもよい。上記はんだ粒子は、はんだを導電部の外表面部分に有する。上記はんだ粒子は、中心部分及び導電部の外表面部分とのいずれもがはんだにより形成されている。上記はんだ粒子は、上記はんだ粒子の中心部分及び導電性の外表面のいずれもがはんだである粒子である。上記導電性粒子は、基材粒子と、該基材粒子の表面上に配置された導電部とを有していてもよい。この場合に、上記導電性粒子は、導電部の外表面部分に、はんだを有する。 (Conductive particles)
The conductive particles electrically connect the electrodes of the connection target member. The conductive particles have solder on the outer surface portion of the conductive portion. The conductive particles may be solder particles formed by solder. The solder particles have solder on the outer surface portion of the conductive portion. As for the said solder particle, both the center part and the outer surface part of an electroconductive part are formed with the solder. The solder particles are particles in which both the central portion of the solder particles and the conductive outer surface are solder. The said electroconductive particle may have a base material particle and the electroconductive part arrange | positioned on the surface of this base material particle. In this case, the conductive particles have solder on the outer surface portion of the conductive portion.
　なお、上記はんだ粒子を用いた場合と比べて、はんだにより形成されていない基材粒子と基材粒子の表面上に配置されたはんだ部とを備える導電性粒子を用いた場合には、電極上に導電性粒子が集まりにくくなり、導電性粒子同士のはんだ接合性が低いために、電極上に移動した導電性粒子が電極外に移動しやすくなる傾向があり、電極間の位置ずれの抑制効果も低くなる傾向がある。従って、上記導電性粒子は、はんだにより形成されたはんだ粒子であることが好ましい。 Compared to the case where the above solder particles are used, in the case where conductive particles including base particles not formed by solder and solder portions arranged on the surface of the base particles are used, The conductive particles are less likely to collect on the surface, and the solder joint property between the conductive particles is low, so the conductive particles that have moved onto the electrodes tend to move out of the electrodes, and the effect of suppressing displacement between the electrodes Tend to be lower. Therefore, the conductive particles are preferably solder particles formed by solder.
　接続構造体における接続抵抗を効果的に低くし、ボイドの発生を効果的に抑制する観点からは、上記導電性粒子の外表面（はんだの外表面）に、カルボキシル基又はアミノ基が存在することが好ましく、カルボキシル基が存在することが好ましく、アミノ基が存在することが好ましい。上記導電性粒子の外表面（はんだの外表面）に、Ｓｉ－Ｏ結合、エーテル結合、エステル結合又は下記式（Ｘ）で表される基を介して、カルボキシル基又はアミノ基を含む基が共有結合していることが好ましい。カルボキシル基又はアミノ基を含む基は、カルボキシル基とアミノ基との双方を含んでいてもよい。なお、下記式（Ｘ）において、右端部及び左端部は結合部位を表す。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, a carboxyl group or an amino group is present on the outer surface of the conductive particles (the outer surface of the solder). It is preferable that a carboxyl group is present, and an amino group is preferably present. A group containing a carboxyl group or an amino group is shared on the outer surface of the conductive particle (the outer surface of the solder) via a Si—O bond, an ether bond, an ester bond or a group represented by the following formula (X). Bonding is preferred. The group containing a carboxyl group or an amino group may contain both a carboxyl group and an amino group. In the following formula (X), the right end and the left end represent a binding site.
Figure JPOXMLDOC01-appb-C000001
Figure JPOXMLDOC01-appb-C000001
　はんだの表面に水酸基が存在する。この水酸基とカルボキシル基を含む基とを共有結合させることにより、他の配位結合（キレート配位）等にて結合させる場合よりも強い結合を形成できるため、電極間の接続抵抗を低くし、かつボイドの発生を抑えることが可能な導電性粒子が得られる。 There are hydroxyl groups on the solder surface. By covalently bonding this hydroxyl group and a group containing a carboxyl group, a stronger bond can be formed than in the case of bonding by other coordination bond (chelate coordination) or the like, so the connection resistance between the electrodes is reduced, And the electroconductive particle which can suppress generation | occurrence | production of a void is obtained.
　上記導電性粒子では、はんだの表面と、カルボキシル基を含む基との結合形態に、配位結合が含まれていなくてもよく、キレート配位による結合が含まれていなくてもよい。 In the conductive particles, the bond form between the solder surface and the group containing a carboxyl group may not include a coordinate bond, and may not include a bond due to a chelate coordinate.
　接続構造体における接続抵抗を効果的に低くし、ボイドの発生を効果的に抑制する観点からは、上記導電性粒子は、水酸基と反応可能な官能基とカルボキシル基又はアミノ基とを有する化合物（以下、化合物Ｘと記載することがある）を用いて、はんだの表面の水酸基に、上記水酸基と反応可能な官能基を反応させることにより得られることが好ましい。上記反応では、共有結合を形成させる。はんだの表面の水酸基と上記化合物Ｘにおける上記水酸基と反応可能な官能基とを反応させることで、はんだの表面にカルボキシル基又はアミノ基を含む基が共有結合している導電性粒子を容易に得ることができ、はんだの表面にエーテル結合又はエステル結合を介してカルボキシル基又はアミノ基を含む基が共有結合しているはんだ粒子を得ることもできる。上記はんだの表面の水酸基に上記水酸基と反応可能な官能基を反応させることで、はんだの表面に、上記化合物Ｘを共有結合の形態で化学結合させることができる。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the conductive particle is a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group or an amino group ( Hereinafter, it is preferably obtained by reacting a hydroxyl group on the surface of the solder with a functional group capable of reacting with the hydroxyl group using a compound X). In the above reaction, a covalent bond is formed. By reacting a hydroxyl group on the surface of the solder with a functional group capable of reacting with the hydroxyl group in the compound X, conductive particles in which a group containing a carboxyl group or an amino group is covalently bonded to the surface of the solder are easily obtained. It is also possible to obtain solder particles in which a group containing a carboxyl group or an amino group is covalently bonded to the surface of the solder via an ether bond or an ester bond. By reacting a hydroxyl group on the surface of the solder with a functional group capable of reacting with the hydroxyl group, the compound X can be chemically bonded to the surface of the solder in the form of a covalent bond.
　上記水酸基と反応可能な官能基としては、水酸基、カルボキシル基、エステル基及びカルボニル基等が挙げられる。水酸基又はカルボキシル基が好ましい。上記水酸基と反応可能な官能基は、水酸基であってもよく、カルボキシル基であってもよい。 Examples of the functional group capable of reacting with the hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, and a carbonyl group. A hydroxyl group or a carboxyl group is preferred. The functional group capable of reacting with the hydroxyl group may be a hydroxyl group or a carboxyl group.
　水酸基と反応可能な官能基を有する化合物としては、レブリン酸、グルタル酸、グリコール酸、コハク酸、リンゴ酸、シュウ酸、マロン酸、アジピン酸、５－ケトヘキサン酸、３－ヒドロキシプロピオン酸、４－アミノ酪酸、３－メルカプトプロピオン酸、３－メルカプトイソブチル酸、３－メチルチオプロピオン酸、３－フェニルプロピオン酸、３－フェニルイソブチル酸、４－フェニル酪酸、デカン酸、ドデカン酸、テトラデカン酸、ペンタデカン酸、ヘキサデカン酸、９－ヘキサデセン酸、ヘプタデカン酸、ステアリン酸、オレイン酸、バクセン酸、リノール酸、（９，１２，１５）－リノレン酸、ノナデカン酸、アラキジン酸、デカン二酸及びドデカン二酸等が挙げられる。グルタル酸又はグリコール酸が好ましい。上記水酸基と反応可能な官能基を有する化合物は１種のみが用いられてもよく、２種以上が併用されてもよい。上記水酸基と反応可能な官能基を有する化合物は、カルボキシル基を少なくとも１つ有する化合物であることが好ましい。 Examples of the compound having a functional group capable of reacting with a hydroxyl group include levulinic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4- Aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, decanoic acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, Hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, vaccenic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanoic acid, arachidic acid, decanedioic acid and dodecanedioic acid It is done. Glutaric acid or glycolic acid is preferred. Only 1 type may be used for the compound which has the functional group which can react with the said hydroxyl group, and 2 or more types may be used together. The compound having a functional group capable of reacting with the hydroxyl group is preferably a compound having at least one carboxyl group.
　上記化合物Ｘは、フラックス作用を有することが好ましく、上記化合物Ｘは、はんだの表面に結合した状態でフラックス作用を有することが好ましい。フラックス作用を有する化合物は、はんだの表面の酸化膜及び電極の表面の酸化膜を除去可能である。カルボキシル基はフラックス作用を有する。 The compound X preferably has a flux action, and the compound X preferably has a flux action in a state of being bonded to the solder surface. The compound having a flux action can remove the oxide film on the surface of the solder and the oxide film on the surface of the electrode. The carboxyl group has a flux action.
　フラックス作用を有する化合物としては、レブリン酸、グルタル酸、グリコール酸、コハク酸、５－ケトヘキサン酸、３－ヒドロキシプロピオン酸、４－アミノ酪酸、３－メルカプトプロピオン酸、３－メルカプトイソブチル酸、３－メチルチオプロピオン酸、３－フェニルプロピオン酸、３－フェニルイソブチル酸及び４－フェニル酪酸等が挙げられる。グルタル酸又はグリコール酸が好ましい。上記フラックス作用を有する化合物は１種のみが用いられてもよく、２種以上が併用されてもよい。 Examples of the compound having a flux action include levulinic acid, glutaric acid, glycolic acid, succinic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3- Examples include methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid and 4-phenylbutyric acid. Glutaric acid or glycolic acid is preferred. As for the compound which has the said flux effect | action, only 1 type may be used and 2 or more types may be used together.
　接続構造体における接続抵抗を効果的に低くし、ボイドの発生を効果的に抑制する観点からは、上記化合物Ｘにおける上記水酸基と反応可能な官能基が、水酸基又はカルボキシル基であることが好ましい。上記化合物Ｘにおける上記水酸基と反応可能な官能基は、水酸基であってもよく、カルボキシル基であってもよい。上記水酸基と反応可能な官能基がカルボキシル基である場合には、上記化合物Ｘは、カルボキシル基を少なくとも２個有することが好ましい。カルボキシル基を少なくとも２個有する化合物の一部のカルボキシル基を、はんだの表面の水酸基に反応させることで、はんだの表面にカルボキシル基を含む基が共有結合している導電性粒子が得られる。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the functional group capable of reacting with the hydroxyl group in the compound X is preferably a hydroxyl group or a carboxyl group. The functional group capable of reacting with the hydroxyl group in the compound X may be a hydroxyl group or a carboxyl group. When the functional group capable of reacting with the hydroxyl group is a carboxyl group, the compound X preferably has at least two carboxyl groups. By reacting a part of the carboxyl group of the compound having at least two carboxyl groups with the hydroxyl group on the surface of the solder, conductive particles in which the group containing the carboxyl group is covalently bonded to the surface of the solder can be obtained.
　上記導電性粒子の製造方法は、例えば、導電性粒子を用いて、該導電性粒子、水酸基と反応可能な官能基とカルボキシル基とを有する化合物、触媒及び溶媒を混合する工程を備える。上記導電性粒子の製造方法では、上記混合工程により、はんだの表面に、カルボキシル基を含む基が共有結合している導電性粒子を容易に得ることができる。 The method for producing conductive particles includes, for example, using conductive particles and mixing the conductive particles, a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, a catalyst, and a solvent. In the method for producing conductive particles, conductive particles in which a group containing a carboxyl group is covalently bonded to the surface of the solder can be easily obtained by the mixing step.
　また、上記導電性粒子の製造方法では、導電性粒子を用いて、該導電性粒子、上記水酸基と反応可能な官能基とカルボキシル基とを有する化合物、上記触媒及び上記溶媒を混合し、加熱することが好ましい。混合及び加熱工程により、はんだの表面に、カルボキシル基を含む基が共有結合している導電性粒子をより一層容易に得ることができる。 Moreover, in the said manufacturing method of electroconductive particle, using electroconductive particle, this electroconductive particle, the compound which has the functional group and carboxyl group which can react with the said hydroxyl group, the said catalyst, and the said solvent are mixed, and it heats. It is preferable. By the mixing and heating step, conductive particles in which a group containing a carboxyl group is covalently bonded to the surface of the solder can be obtained more easily.
　上記溶媒としては、メタノール、エタノール、プロパノール、ブタノール等のアルコール溶媒や、アセトン、メチルエチルケトン、酢酸エチル、トルエン及びキシレン等が挙げられる。上記溶媒は有機溶媒であることが好ましく、トルエンであることがより好ましい。上記溶媒は、１種のみが用いられてもよく、２種以上が併用されてもよい。 Examples of the solvent include alcohol solvents such as methanol, ethanol, propanol and butanol, acetone, methyl ethyl ketone, ethyl acetate, toluene and xylene. The solvent is preferably an organic solvent, and more preferably toluene. As for the said solvent, only 1 type may be used and 2 or more types may be used together.
　上記触媒としては、ｐ－トルエンスルホン酸、ベンゼンスルホン酸及び１０－カンファースルホン酸等が挙げられる。上記触媒は、ｐ－トルエンスルホン酸であることが好ましい。上記触媒は１種のみが用いられてもよく、２種以上が併用されてもよい。 Examples of the catalyst include p-toluenesulfonic acid, benzenesulfonic acid, 10-camphorsulfonic acid, and the like. The catalyst is preferably p-toluenesulfonic acid. As for the said catalyst, only 1 type may be used and 2 or more types may be used together.
　上記混合時に加熱することが好ましい。加熱温度は好ましくは９０℃以上、より好ましくは１００℃以上であり、好ましくは１３０℃以下、より好ましくは１１０℃以下である。 It is preferable to heat at the time of mixing. The heating temperature is preferably 90 ° C or higher, more preferably 100 ° C or higher, preferably 130 ° C or lower, more preferably 110 ° C or lower.
　接続構造体における接続抵抗を効果的に低くし、ボイドの発生を効果的に抑制する観点からは、上記導電性粒子は、イソシアネート化合物を用いて、はんだの表面の水酸基に、上記イソシアネート化合物を反応させる工程を経て得られることが好ましい。上記反応では、共有結合を形成させる。はんだの表面の水酸基と上記イソシアネート化合物とを反応させることで、はんだの表面に、イソシアネート基に由来する基の窒素原子が共有結合している導電性粒子を容易に得ることができる。上記はんだの表面の水酸基に上記イソシアネート化合物を反応させることで、はんだの表面に、イソシアネート基に由来する基を共有結合の形態で化学結合させることができる。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the conductive particles react with the isocyanate compound to the hydroxyl group on the surface of the solder using the isocyanate compound. It is preferable that it is obtained through the process of making it. In the above reaction, a covalent bond is formed. By reacting the hydroxyl group on the surface of the solder with the isocyanate compound, it is possible to easily obtain conductive particles in which the nitrogen atom of the group derived from the isocyanate group is covalently bonded to the surface of the solder. By reacting the isocyanate compound with a hydroxyl group on the surface of the solder, a group derived from an isocyanate group can be chemically bonded to the surface of the solder in the form of a covalent bond.
　また、イソシアネート基に由来する基には、シランカップリング剤を容易に反応させることができる。上記導電性粒子を容易に得ることができるので、上記カルボキシル基を含む基が、カルボキシル基を有するシランカップリング剤を用いた反応により導入されているか、又は、シランカップリング剤を用いた反応の後に、シランカップリング剤に由来する基にカルボキシル基を少なくとも１つ有する化合物を反応させることで導入されていることが好ましい。上記導電性粒子は、上記イソシアネート化合物を用いて、はんだの表面の水酸基に、上記イソシアネート化合物を反応させた後、カルボキシル基を少なくとも１つ有する化合物を反応させることにより得られることが好ましい。 In addition, a silane coupling agent can be easily reacted with a group derived from an isocyanate group. Since the conductive particles can be easily obtained, the group containing a carboxyl group is introduced by a reaction using a silane coupling agent having a carboxyl group, or the reaction using a silane coupling agent is performed. It is preferably introduced later by reacting a compound derived from a silane coupling agent with a compound having at least one carboxyl group. The conductive particles are preferably obtained by reacting the isocyanate compound with a hydroxyl group on the surface of the solder using the isocyanate compound and then reacting a compound having at least one carboxyl group.
　接続構造体における接続抵抗を効果的に低くし、ボイドの発生を効果的に抑制する観点からは、上記カルボキシル基を少なくとも１つ有する化合物が、カルボキシル基を複数有することが好ましい。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the compound having at least one carboxyl group preferably has a plurality of carboxyl groups.
　上記イソシアネート化合物としては、ジフェニルメタン－４，４’－ジイソシアネート（ＭＤＩ）、ヘキサメチレンジイソシアネート（ＨＤＩ）、トルエンジイソシアネート（ＴＤＩ）及びイソホロンジイソシアネート（ＩＰＤＩ）等が挙げられる。これら以外のイソシアネート化合物を用いてもよい。この化合物をはんだの表面に反応させた後、残イソシアネート基と、その残イソシアネート基と反応性を有し、かつカルボキシル基を有する化合物を反応させることで、はんだの表面に式（Ｘ）で表される基を介して、カルボキシル基を導入することができる。 Examples of the isocyanate compound include diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), and isophorone diisocyanate (IPDI). Isocyanate compounds other than these may be used. After reacting this compound on the surface of the solder, the surface of the solder is represented by the formula (X) by reacting the residual isocyanate group and a compound having reactivity with the residual isocyanate group and having a carboxyl group. A carboxyl group can be introduced through the group to be formed.
　上記イソシアネート化合物としては、不飽和二重結合を有し、かつイソシアネート基を有する化合物を用いてもよい。例えば、２－アクリロイルオキシエチルイソシアネート及び２－イソシアナトエチルメタクリレートが挙げられる。この化合物のイソシアネート基をはんだの表面に反応させた後、残存している不飽和二重結合に対し反応性を有する官能基を有し、かつカルボキシル基を有する化合物を反応させることで、はんだの表面に式（Ｘ）で表される基を介して、カルボキシル基を導入することができる。 As the isocyanate compound, a compound having an unsaturated double bond and having an isocyanate group may be used. Examples include 2-acryloyloxyethyl isocyanate and 2-isocyanatoethyl methacrylate. After reacting the isocyanate group of this compound on the surface of the solder, reacting the compound having a functional group having reactivity with the remaining unsaturated double bond and having a carboxyl group, A carboxyl group can be introduced to the surface via a group represented by the formula (X).
　上記シランカップリング剤としては、３－イソシアネートプロピルトリエトキシシラン（信越シリコーン社製「ＫＢＥ－９００７」）、及び３－イソシアネートプロピルトリメトキシシラン（ＭＯＭＥＮＴＩＶＥ社製「Ｙ－５１８７」）等が挙げられる。上記シランカップリング剤は、１種のみが用いられてもよく、２種以上が併用されてもよい。 Examples of the silane coupling agent include 3-isocyanatopropyltriethoxysilane (“KBE-9007” manufactured by Shin-Etsu Silicone) and 3-isocyanatepropyltrimethoxysilane (“Y-5187” manufactured by MOMENTIVE). As for the said silane coupling agent, only 1 type may be used and 2 or more types may be used together.
　上記カルボキシル基を少なくとも１つ有する化合物としては、レブリン酸、グルタル酸、グリコール酸、コハク酸、リンゴ酸、シュウ酸、マロン酸、アジピン酸、５－ケトヘキサン酸、３－ヒドロキシプロピオン酸、４－アミノ酪酸、３－メルカプトプロピオン酸、３－メルカプトイソブチル酸、３－メチルチオプロピオン酸、３－フェニルプロピオン酸、３－フェニルイソブチル酸、４－フェニル酪酸、デカン酸、ドデカン酸、テトラデカン酸、ペンタデカン酸、ヘキサデカン酸、９－ヘキサデセン酸、ヘプタデカン酸、ステアリン酸、オレイン酸、バクセン酸、リノール酸、（９，１２，１５）－リノレン酸、ノナデカン酸、アラキジン酸、デカン二酸及びドデカン二酸等が挙げられる。グルタル酸、アジピン酸又はグリコール酸が好ましい。上記カルボキシル基を少なくとも１つ有する化合物は１種のみが用いられてもよく、２種以上が併用されてもよい。 Examples of the compound having at least one carboxyl group include levulinic acid, glutaric acid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-amino Butyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, decanoic acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecane Examples include acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, vaccenic acid, linoleic acid, (9,12,15) -linolenic acid, nonadecanoic acid, arachidic acid, decanedioic acid and dodecanedioic acid. . Glutaric acid, adipic acid or glycolic acid is preferred. As for the compound which has at least 1 said carboxyl group, only 1 type may be used and 2 or more types may be used together.
　上記イソシアネート化合物を用いて、はんだの表面の水酸基に、上記イソシアネート化合物を反応させた後、カルボキシル基を複数有する化合物の一部のカルボキシル基を、はんだの表面の水酸基と反応させることで、カルボキシル基を含む基を残存させることができる。 After reacting the isocyanate compound with the hydroxyl group on the surface of the solder using the isocyanate compound, the carboxyl group of the compound having a plurality of carboxyl groups is reacted with the hydroxyl group on the surface of the solder. The group containing can be left.
　上記導電性粒子の製造方法では、導電性粒子を用いて、かつ、イソシアネート化合物を用いて、はんだの表面の水酸基に、上記イソシアネート化合物を反応させた後、カルボキシル基を少なくとも１つ有する化合物を反応させて、はんだの表面に、上記式（Ｘ）で表される基を介して、カルボキシル基を含む基が結合している導電性粒子を得る。上記導電性粒子の製造方法では、上記の工程により、はんだの表面に、カルボキシル基を含む基が導入された導電性粒子を容易に得ることができる。 In the method for producing conductive particles, the conductive particles are used and the isocyanate compound is used to react the hydroxyl group on the surface of the solder with the isocyanate compound, and then the compound having at least one carboxyl group is reacted. Thus, conductive particles in which a group containing a carboxyl group is bonded to the surface of the solder via the group represented by the above formula (X) are obtained. In the method for producing conductive particles, conductive particles in which a group containing a carboxyl group is introduced on the surface of the solder can be easily obtained by the above-described steps.
　上記導電性粒子の具体的な製造方法としては、以下の方法が挙げられる。有機溶媒に導電性粒子を分散させ、イソシアネート基を有するシランカップリング剤を添加する。その後、導電性粒子のはんだの表面の水酸基とイソシアネート基との反応触媒を用い、はんだの表面にシランカップリング剤を共有結合させる。次に、シランカップリング剤のケイ素原子に結合しているアルコキシ基を加水分解することで、水酸基を生成させる。生成した水酸基に、カルボキシル基を少なくとも１つ有する化合物のカルボキシル基を反応させる。 The following method can be given as a specific method for producing the conductive particles. Conductive particles are dispersed in an organic solvent, and a silane coupling agent having an isocyanate group is added. Thereafter, a silane coupling agent is covalently bonded to the surface of the solder using a reaction catalyst between a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles. Next, a hydroxyl group is produced | generated by hydrolyzing the alkoxy group couple | bonded with the silicon atom of a silane coupling agent. The produced hydroxyl group is reacted with a carboxyl group of a compound having at least one carboxyl group.
　また、上記導電性粒子の具体的な製造方法としては、以下の方法が挙げられる。有機溶媒に導電性粒子を分散させ、イソシアネート基と不飽和二重結合を有する化合物を添加する。その後、導電性粒子のはんだの表面の水酸基とイソシアネート基との反応触媒を用い、共有結合を形成させる。その後、導入された不飽和二重結合に対して、不飽和二重結合、及びカルボキシル基を有する化合物を反応させる。 Moreover, the following method is mentioned as a concrete manufacturing method of the said electroconductive particle. Conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, a covalent bond is formed using a reaction catalyst of a hydroxyl group and an isocyanate group on the surface of the solder of the conductive particles. Thereafter, the unsaturated double bond introduced is reacted with a compound having an unsaturated double bond and a carboxyl group.
　導電性粒子のはんだの表面の水酸基とイソシアネート基との反応触媒としては、錫系触媒（ジブチル錫ジラウレート等）、アミン系触媒（トリエチレンジアミン等）、カルボキシレート触媒（ナフテン酸鉛、酢酸カリウム等）、及びトリアルキルホスフィン触媒（トリエチルホスフィン等）等が挙げられる。 The reaction catalyst for hydroxyl groups and isocyanate groups on the surface of the solder of the conductive particles includes tin catalysts (dibutyltin dilaurate, etc.), amine catalysts (triethylenediamine, etc.), carboxylate catalysts (lead naphthenate, potassium acetate, etc.) And a trialkylphosphine catalyst (such as triethylphosphine).
　接続構造体における接続抵抗を効果的に低くし、ボイドの発生を効果的に抑制する観点からは、上記カルボキシル基を少なくとも１つ有する化合物は、下記式（１）で表される化合物であることが好ましい。下記式（１）で表される化合物は、フラックス作用を有する。また、下記式（１）で表される化合物は、はんだの表面に導入された状態でフラックス作用を有する。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the compound having at least one carboxyl group is a compound represented by the following formula (1): Is preferred. The compound represented by the following formula (1) has a flux action. Moreover, the compound represented by following formula (1) has a flux effect | action in the state introduced into the surface of solder.
Figure JPOXMLDOC01-appb-C000002
Figure JPOXMLDOC01-appb-C000002
　上記式（１）中、Ｘは、水酸基と反応可能な官能基を表し、Ｒは、炭素数１～５の２価の有機基を表す。該有機基は、炭素原子と水素原子と酸素原子とを含んでいてもよい。該有機基は炭素数１～５の２価の炭化水素基であってもよい。上記有機基の主鎖は２価の炭化水素基であることが好ましい。該有機基では、２価の炭化水素基にカルボキシル基や水酸基が結合していてもよい。上記式（１）で表される化合物には、例えばクエン酸が含まれる。 In the above formula (1), X represents a functional group capable of reacting with a hydroxyl group, and R represents a divalent organic group having 1 to 5 carbon atoms. The organic group may contain a carbon atom, a hydrogen atom, and an oxygen atom. The organic group may be a divalent hydrocarbon group having 1 to 5 carbon atoms. The main chain of the organic group is preferably a divalent hydrocarbon group. In the organic group, a carboxyl group or a hydroxyl group may be bonded to a divalent hydrocarbon group. Examples of the compound represented by the above formula (1) include citric acid.
　上記カルボキシル基を少なくとも１つ有する化合物は、下記式（１Ａ）又は下記式（１Ｂ）で表される化合物であることが好ましい。上記カルボキシル基を少なくとも１つ有する化合物は、下記式（１Ａ）で表される化合物であることが好ましく、下記式（１Ｂ）で表される化合物であることがより好ましい。 The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B). The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B).
Figure JPOXMLDOC01-appb-C000003
Figure JPOXMLDOC01-appb-C000003
　上記式（１Ａ）中、Ｒは、炭素数１～５の２価の有機基を表す。上記式（１Ａ）中のＲは上記式（１）中のＲと同様である。 In the above formula (1A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1A) is the same as R in the above formula (1).
Figure JPOXMLDOC01-appb-C000004
Figure JPOXMLDOC01-appb-C000004
　上記式（１Ｂ）中、Ｒは、炭素数１～５の２価の有機基を表す。上記式（１Ｂ）中のＲは上記式（１）中のＲと同様である。 In the above formula (1B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1B) is the same as R in the above formula (1).
　はんだの表面に、下記式（２Ａ）又は下記式（２Ｂ）で表される基が結合していることが好ましい。はんだの表面に、下記式（２Ａ）で表される基が結合していることが好ましく、下記式（２Ｂ）で表される基が結合していることがより好ましい。なお、下記式（２Ａ）及び下記式（２Ｂ）において、左端部は結合部位を表す。 It is preferable that a group represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder. A group represented by the following formula (2A) is preferably bonded to the surface of the solder, and more preferably a group represented by the following formula (2B) is bonded. In the following formula (2A) and the following formula (2B), the left end portion represents a binding site.
Figure JPOXMLDOC01-appb-C000005
Figure JPOXMLDOC01-appb-C000005
　上記式（２Ａ）中、Ｒは、炭素数１～５の２価の有機基を表す。上記式（２Ａ）中のＲは上記式（１）中のＲと同様である。 In the above formula (2A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2A) is the same as R in the above formula (1).
Figure JPOXMLDOC01-appb-C000006
Figure JPOXMLDOC01-appb-C000006
　上記式（２Ｂ）中、Ｒは、炭素数１～５の２価の有機基を表す。上記式（２Ｂ）中のＲは上記式（１）中のＲと同様である。 In the above formula (2B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2B) is the same as R in the above formula (1).
　はんだの表面の濡れ性を高める観点からは、上記カルボキシル基を少なくとも１つ有する化合物の分子量は、好ましくは１００００以下、より好ましくは１０００以下、更に好ましくは５００以下である。 From the viewpoint of enhancing the wettability of the solder surface, the molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1000 or less, and even more preferably 500 or less.
　上記分子量は、上記カルボキシル基を少なくとも１つ有する化合物が重合体ではない場合、及び上記カルボキシル基を少なくとも１つ有する化合物の構造式が特定できる場合は、当該構造式から算出できる分子量を意味する。また、上記カルボキシル基を少なくとも１つ有する化合物が重合体である場合は、重量平均分子量を意味する。 The molecular weight means a molecular weight that can be calculated from the structural formula when the compound having at least one carboxyl group is not a polymer and when the structural formula of the compound having at least one carboxyl group can be specified. Further, when the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight.
　導電接続時に導電性粒子の凝集性を効果的に高めることができることから、上記導電性粒子は、導電性粒子本体と、上記導電性粒子本体の表面上に配置されたアニオンポリマーとを有することが好ましい。上記導電性粒子は、導電性粒子本体をアニオンポリマー又はアニオンポリマーとなる化合物で表面処理することにより得られることが好ましい。上記導電性粒子は、アニオンポリマー又はアニオンポリマーとなる化合物による表面処理物であることが好ましい。上記アニオンポリマー及び上記アニオンポリマーとなる化合物はそれぞれ、１種のみが用いられてもよく、２種以上が併用されてもよい。上記アニオンポリマーは、酸性基を有するポリマーである。 Since the cohesiveness of the conductive particles can be effectively increased at the time of conductive connection, the conductive particles may have a conductive particle main body and an anionic polymer disposed on the surface of the conductive particle main body. preferable. The conductive particles are preferably obtained by surface-treating the conductive particle body with an anionic polymer or a compound that becomes an anionic polymer. The conductive particles are preferably a surface treated product of an anionic polymer or a compound that becomes an anionic polymer. As for the said anion polymer and the compound used as the said anion polymer, only 1 type may respectively be used and 2 or more types may be used together. The anionic polymer is a polymer having an acidic group.
　導電性粒子本体をアニオンポリマーで表面処理する方法としては、アニオンポリマーとして、例えば（メタ）アクリル酸を共重合した（メタ）アクリルポリマー、ジカルボン酸とジオールとから合成されかつ両末端にカルボキシル基を有するポリエステルポリマー、ジカルボン酸の分子間脱水縮合反応により得られかつ両末端にカルボキシル基を有するポリマー、ジカルボン酸とジアミンから合成されかつ両末端にカルボキシル基を有するポリエステルポリマー、並びにカルボキシル基を有する変性ポバール（日本合成化学社製「ゴーセネックスＴ」）等を用いて、アニオンポリマーのカルボキシル基と、導電性粒子本体の表面の水酸基とを反応させる方法が挙げられる。 As a method of surface-treating the conductive particle body with an anionic polymer, as an anionic polymer, for example, a (meth) acrylic polymer copolymerized with (meth) acrylic acid, synthesized from a dicarboxylic acid and a diol, and having carboxyl groups at both ends are used. Polyester polymer having a carboxyl group at both ends obtained by intermolecular dehydration condensation reaction of dicarboxylic acid, polyester polymer synthesized from dicarboxylic acid and diamine and having carboxyl group at both ends, and modified poval having carboxyl group (Nippon Synthetic Chemical Co., Ltd. "GOHSEX T") etc., and the method of making the carboxyl group of an anionic polymer react with the hydroxyl group of the surface of an electroconductive particle main body is mentioned.
　上記アニオンポリマーのアニオン部分としては、上記カルボキシル基が挙げられ、それ以外には、トシル基（ｐ－Ｈ３ＣＣ６Ｈ４Ｓ（＝Ｏ）２－）、スルホン酸イオン基（－ＳＯ３ －）、及びリン酸イオン基（－ＰＯ４ －）等が挙げられる。 Examples of the anion portion of the anionic polymer include the carboxyl group, and other than that, a tosyl group (p—H 3 CC 6 H 4 S (═O) 2 —), a sulfonate ion group (—SO 3 —) ), And phosphate ion groups (—PO 4 − ) and the like.
　また、表面処理の他の方法としては、導電性粒子本体の表面の水酸基と反応する官能基を有し、さらに、付加、縮合反応により重合可能な官能基を有する化合物を用いて、この化合物を導電性粒子本体の表面上にてポリマー化する方法が挙げられる。導電性粒子本体の表面の水酸基と反応する官能基としては、カルボキシル基、及びイソシアネート基等が挙げられ、付加、縮合反応により重合する官能基としては、水酸基、カルボキシル基、アミノ基、及び（メタ）アクリロイル基が挙げられる。 In addition, as another method for the surface treatment, a compound having a functional group that reacts with a hydroxyl group on the surface of the conductive particle main body and a functional group that can be polymerized by addition or condensation reaction is used. The method of polymerizing on the surface of an electroconductive particle main body is mentioned. Examples of the functional group that reacts with the hydroxyl group on the surface of the conductive particle body include a carboxyl group and an isocyanate group, and the functional group that polymerizes by addition and condensation reactions includes a hydroxyl group, a carboxyl group, an amino group, and (meta ) An acryloyl group is mentioned.
　上記アニオンポリマーの重量平均分子量は好ましくは２０００以上、より好ましくは３０００以上であり、好ましくは１００００以下、より好ましくは８０００以下である。上記重量平均分子量が上記下限以上及び上記上限以下であると、導電性粒子の表面に十分な量の電荷、及びフラックス性を導入することができる。これにより、導電接続時に導電性粒子の凝集性を効果的に高めることができ、かつ、接続対象部材の接続時に、電極の表面の酸化膜を効果的に除去することができる。 The weight average molecular weight of the anionic polymer is preferably 2000 or more, more preferably 3000 or more, preferably 10,000 or less, more preferably 8000 or less. When the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, a sufficient amount of charge and flux properties can be introduced on the surface of the conductive particles. Thereby, the cohesiveness of electroconductive particle can be effectively improved at the time of conductive connection, and the oxide film on the surface of an electrode can be effectively removed at the time of connection of the connection object member.
　上記重量平均分子量が上記下限以上及び上記上限以下であると、導電性粒子本体の表面上にアニオンポリマーを配置することが容易であり、導電接続時に導電性粒子の凝集性を効果的に高めることができ、電極上に導電性粒子をより一層効率的に配置することができる。 When the weight average molecular weight is not less than the above lower limit and not more than the above upper limit, it is easy to dispose an anionic polymer on the surface of the conductive particle main body, and effectively increase the cohesiveness of the conductive particles during conductive connection. And the conductive particles can be more efficiently arranged on the electrode.
　上記重量平均分子量は、ゲルパーミエーションクロマトグラフィー（ＧＰＣ）により測定されたポリスチレン換算での重量平均分子量を示す。 The weight average molecular weight indicates a weight average molecular weight in terms of polystyrene measured by gel permeation chromatography (GPC).
　導電性粒子本体をアニオンポリマーとなる化合物で表面処理することにより得られたポリマーの重量平均分子量は、導電性粒子中のはんだを溶解し、ポリマーの分解を起こさない希塩酸等により、導電性粒子を除去した後、残存しているポリマーの重量平均分子量を測定することで求めることができる。 The weight average molecular weight of the polymer obtained by surface-treating the conductive particle main body with a compound that becomes an anionic polymer is obtained by dissolving the solder in the conductive particles, and diluting the conductive particles with dilute hydrochloric acid that does not cause decomposition of the polymer. After removal, it can be determined by measuring the weight average molecular weight of the remaining polymer.
　次に、図面を参照しつつ、導電性粒子の具体例を説明する。 Next, specific examples of conductive particles will be described with reference to the drawings.
　図４は、導電材料に使用可能な導電性粒子の第１の例を示す断面図である。 FIG. 4 is a cross-sectional view showing a first example of conductive particles that can be used as a conductive material.
　図４に示す導電性粒子２１は、はんだ粒子である。導電性粒子２１は、全体がはんだにより形成されている。導電性粒子２１は、基材粒子をコアに有さず、コアシェル粒子ではない。導電性粒子２１は、中心部分及び導電部の外表面部分のいずれもがはんだにより形成されている。 The conductive particles 21 shown in FIG. 4 are solder particles. The conductive particles 21 are entirely formed of solder. The conductive particles 21 do not have base particles in the core, and are not core-shell particles. As for the electroconductive particle 21, both the center part and the outer surface part of an electroconductive part are formed with the solder.
　図５は、導電材料に使用可能な導電性粒子の第２の例を示す断面図である。 FIG. 5 is a cross-sectional view showing a second example of conductive particles that can be used as a conductive material.
　図５に示す導電性粒子３１は、基材粒子３２と、基材粒子３２の表面上に配置された導電部３３とを備える。導電部３３は、基材粒子３２の表面を被覆している。導電性粒子３１は、基材粒子３２の表面が導電部３３により被覆された被覆粒子である。 The electroconductive particle 31 shown in FIG. 5 is equipped with the base material particle 32 and the electroconductive part 33 arrange | positioned on the surface of the base material particle 32. FIG. The conductive portion 33 covers the surface of the base particle 32. The conductive particles 31 are coated particles in which the surface of the base particle 32 is covered with the conductive portion 33.
　導電部３３は、第２の導電部３３Ａと、はんだ部３３Ｂ（第１の導電部）とを有する。導電性粒子３１は、基材粒子３２と、はんだ部３３Ｂとの間に、第２の導電部３３Ａを備える。従って、導電性粒子３１は、基材粒子３２と、基材粒子３２の表面上に配置された第２の導電部３３Ａと、第２の導電部３３Ａの外表面上に配置されたはんだ部３３Ｂとを備える。 The conductive portion 33 has a second conductive portion 33A and a solder portion 33B (first conductive portion). The conductive particle 31 includes a second conductive portion 33A between the base particle 32 and the solder portion 33B. Therefore, the conductive particles 31 are composed of the base particle 32, the second conductive portion 33A disposed on the surface of the base particle 32, and the solder portion 33B disposed on the outer surface of the second conductive portion 33A. With.
　図６は、導電材料に使用可能な導電性粒子の第３の例を示す断面図である。 FIG. 6 is a cross-sectional view showing a third example of conductive particles that can be used as a conductive material.
　上記のように、導電性粒子３１における導電部３３は２層構造を有する。図６に示す導電性粒子４１は、単層の導電部として、はんだ部４２を有する。導電性粒子４１は、基材粒子３２と、基材粒子３２の表面上に配置されたはんだ部４２とを備える。 As described above, the conductive portion 33 in the conductive particle 31 has a two-layer structure. The conductive particle 41 shown in FIG. 6 has a solder part 42 as a single-layer conductive part. The conductive particles 41 include base particles 32 and solder portions 42 disposed on the surfaces of the base particles 32.
　上記基材粒子としては、樹脂粒子、金属粒子を除く無機粒子、有機無機ハイブリッド粒子及び金属粒子等が挙げられる。上記基材粒子は、金属を除く基材粒子であることが好ましく、樹脂粒子、金属粒子を除く無機粒子又は有機無機ハイブリッド粒子であることが好ましい。上記基材粒子は、銅粒子であってもよい。上記基材粒子は、コアと、該コアの表面上に配置されたシェルとを有していてもよく、コアシェル粒子であってもよい。上記コアが有機コアであってもよく、上記シェルが無機シェルであってもよい。 Examples of the substrate particles include resin particles, inorganic particles excluding metal particles, organic-inorganic hybrid particles, and metal particles. The substrate particles are preferably substrate particles excluding metal, and are preferably resin particles, inorganic particles excluding metal particles, or organic-inorganic hybrid particles. The substrate particles may be copper particles. The base particle may have a core and a shell disposed on the surface of the core, or may be a core-shell particle. The core may be an organic core, and the shell may be an inorganic shell.
　上記樹脂粒子を形成するための樹脂として、種々の有機物が好適に用いられる。上記樹脂粒子を形成するための樹脂としては、例えば、ポリエチレン、ポリプロピレン、ポリスチレン、ポリ塩化ビニル、ポリ塩化ビニリデン、ポリイソブチレン、ポリブタジエン等のポリオレフィン樹脂；ポリメチルメタクリレート及びポリメチルアクリレート等のアクリル樹脂；ポリカーボネート、ポリアミド、フェノールホルムアルデヒド樹脂、メラミンホルムアルデヒド樹脂、ベンゾグアナミンホルムアルデヒド樹脂、尿素ホルムアルデヒド樹脂、フェノール樹脂、メラミン樹脂、ベンゾグアナミン樹脂、尿素樹脂、エポキシ樹脂、不飽和ポリエステル樹脂、飽和ポリエステル樹脂、ポリエチレンテレフタレート、ポリスルホン、ポリフェニレンオキサイド、ポリアセタール、ポリイミド、ポリアミドイミド、ポリエーテルエーテルケトン、ポリエーテルスルホン、ジビニルベンゼン重合体、並びにジビニルベンゼン系共重合体等が挙げられる。上記ジビニルベンゼン系共重合体等としては、ジビニルベンゼン－スチレン共重合体及びジビニルベンゼン－（メタ）アクリル酸エステル共重合体等が挙げられる。上記樹脂粒子の硬度を好適な範囲に容易に制御できるので、上記樹脂粒子を形成するための樹脂は、エチレン性不飽和基を有する重合性単量体を１種又は２種以上重合させた重合体であることが好ましい。 Various organic substances are suitably used as the resin for forming the resin particles. Examples of the resin for forming the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; acrylic resins such as polymethyl methacrylate and polymethyl acrylate; polycarbonate , Polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polysulfone, polyphenylene oxide , Polyacetal, polyimide, polyamideimide, polyether ether Tons, polyether sulfone, divinyl benzene polymer, and divinylbenzene copolymer, and the like. Examples of the divinylbenzene copolymer include divinylbenzene-styrene copolymer and divinylbenzene- (meth) acrylic acid ester copolymer. Since the hardness of the resin particles can be easily controlled within a suitable range, the resin for forming the resin particles is a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group. It is preferably a coalescence.
　上記樹脂粒子を、エチレン性不飽和基を有する重合性単量体を重合させて得る場合には、該エチレン性不飽和基を有する重合性単量体としては、非架橋性の単量体と架橋性の単量体とが挙げられる。 When the resin particles are obtained by polymerizing a polymerizable monomer having an ethylenically unsaturated group, the polymerizable monomer having an ethylenically unsaturated group includes a non-crosslinkable monomer and And a crosslinkable monomer.
　上記非架橋性の単量体としては、例えば、スチレン、α－メチルスチレン等のスチレン系単量体；（メタ）アクリル酸、マレイン酸、無水マレイン酸等のカルボキシル基含有単量体；メチル（メタ）アクリレート、エチル（メタ）アクリレート、プロピル（メタ）アクリレート、ブチル（メタ）アクリレート、２－エチルヘキシル（メタ）アクリレート、ラウリル（メタ）アクリレート、セチル（メタ）アクリレート、ステアリル（メタ）アクリレート、シクロヘキシル（メタ）アクリレート、イソボルニル（メタ）アクリレート等のアルキル（メタ）アクリレート化合物；２－ヒドロキシエチル（メタ）アクリレート、グリセロール（メタ）アクリレート、ポリオキシエチレン（メタ）アクリレート、グリシジル（メタ）アクリレート等の酸素原子含有（メタ）アクリレート化合物；（メタ）アクリロニトリル等のニトリル含有単量体；メチルビニルエーテル、エチルビニルエーテル、プロピルビニルエーテル等のビニルエーテル化合物；酢酸ビニル、酪酸ビニル、ラウリン酸ビニル、ステアリン酸ビニル等の酸ビニルエステル化合物；エチレン、プロピレン、イソプレン、ブタジエン等の不飽和炭化水素；トリフルオロメチル（メタ）アクリレート、ペンタフルオロエチル（メタ）アクリレート、塩化ビニル、フッ化ビニル、クロルスチレン等のハロゲン含有単量体等が挙げられる。 Examples of the non-crosslinkable monomer include styrene monomers such as styrene and α-methylstyrene; carboxyl group-containing monomers such as (meth) acrylic acid, maleic acid, and maleic anhydride; (Meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, lauryl (meth) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, cyclohexyl ( Alkyl (meth) acrylate compounds such as meth) acrylate and isobornyl (meth) acrylate; 2-hydroxyethyl (meth) acrylate, glycerol (meth) acrylate, polyoxyethylene (meth) acrylate, glycidyl (meth) acrylate, etc. Oxygen atom-containing (meth) acrylate compounds; Nitrile-containing monomers such as (meth) acrylonitrile; Vinyl ether compounds such as methyl vinyl ether, ethyl vinyl ether, and propyl vinyl ether; Acids such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stearate Vinyl ester compounds; unsaturated hydrocarbons such as ethylene, propylene, isoprene, and butadiene; halogen-containing monomers such as trifluoromethyl (meth) acrylate, pentafluoroethyl (meth) acrylate, vinyl chloride, vinyl fluoride, and chlorostyrene Etc.
　上記架橋性の単量体としては、例えば、テトラメチロールメタンテトラ（メタ）アクリレート、テトラメチロールメタントリ（メタ）アクリレート、テトラメチロールメタンジ（メタ）アクリレート、トリメチロールプロパントリ（メタ）アクリレート、ジペンタエリスリトールヘキサ（メタ）アクリレート、ジペンタエリスリトールペンタ（メタ）アクリレート、グリセロールトリ（メタ）アクリレート、グリセロールジ（メタ）アクリレート、（ポリ）エチレングリコールジ（メタ）アクリレート、（ポリ）プロピレングリコールジ（メタ）アクリレート、（ポリ）テトラメチレングリコールジ（メタ）アクリレート、１，４－ブタンジオールジ（メタ）アクリレート等の多官能（メタ）アクリレート化合物；トリアリル（イソ）シアヌレート、トリアリルトリメリテート、ジビニルベンゼン、ジアリルフタレート、ジアリルアクリルアミド、ジアリルエーテル、γ－（メタ）アクリロキシプロピルトリメトキシシラン、トリメトキシシリルスチレン、ビニルトリメトキシシラン等のシラン含有単量体等が挙げられる。 Examples of the crosslinkable monomer include tetramethylolmethane tetra (meth) acrylate, tetramethylolmethane tri (meth) acrylate, tetramethylolmethane di (meth) acrylate, trimethylolpropane tri (meth) acrylate, and dipenta Erythritol hexa (meth) acrylate, dipentaerythritol penta (meth) acrylate, glycerol tri (meth) acrylate, glycerol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) Polyfunctional (meth) acrylate compounds such as acrylate, (poly) tetramethylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate; triallyl (iso) sia Silane-containing monomers such as rate, triallyl trimellitate, divinylbenzene, diallyl phthalate, diallylacrylamide, diallyl ether, γ- (meth) acryloxypropyltrimethoxysilane, trimethoxysilylstyrene, vinyltrimethoxysilane, etc. Can be mentioned.
　「（メタ）アクリレート」の用語は、アクリレートとメタクリレートとを示す。「（メタ）アクリル」の用語は、アクリルとメタクリルとを示す。「（メタ）アクリロイル」の用語は、アクリロイルとメタクリロイルとを示す。 The term “(meth) acrylate” indicates acrylate and methacrylate. The term “(meth) acryl” refers to acrylic and methacrylic. The term “(meth) acryloyl” refers to acryloyl and methacryloyl.
　上記エチレン性不飽和基を有する重合性単量体を、公知の方法により重合させることで、上記樹脂粒子を得ることができる。この方法としては、例えば、ラジカル重合開始剤の存在下で懸濁重合する方法、並びに非架橋の種粒子を用いてラジカル重合開始剤とともに単量体を膨潤させて重合する方法等が挙げられる。 The resin particles can be obtained by polymerizing the polymerizable monomer having an ethylenically unsaturated group by a known method. Examples of this method include a method of suspension polymerization in the presence of a radical polymerization initiator, and a method of polymerizing by swelling a monomer together with a radical polymerization initiator using non-crosslinked seed particles.
　上記基材粒子が金属を除く無機粒子又は有機無機ハイブリッド粒子である場合には、基材粒子を形成するための無機物としては、シリカ、アルミナ、チタン酸バリウム、ジルコニア及びカーボンブラック等が挙げられる。上記無機物は、金属ではないことが好ましい。上記シリカにより形成された粒子としては特に限定されないが、例えば、加水分解性のアルコキシシリル基を２つ以上有するケイ素化合物を加水分解して架橋重合体粒子を形成した後に、必要に応じて焼成を行うことにより得られる粒子が挙げられる。上記有機無機ハイブリッド粒子としては、例えば、架橋したアルコキシシリルポリマーとアクリル樹脂とにより形成された有機無機ハイブリッド粒子等が挙げられる。 When the substrate particles are inorganic particles or organic-inorganic hybrid particles excluding metal, examples of inorganic substances for forming the substrate particles include silica, alumina, barium titanate, zirconia, and carbon black. The inorganic substance is preferably not a metal. The particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle | grains obtained by performing are mentioned. Examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
　上記有機無機ハイブリッド粒子は、コアと、該コアの表面上に配置されたシェルとを有するコアシェル型の有機無機ハイブリッド粒子であることが好ましい。上記コアが有機コアであることが好ましい。上記シェルが無機シェルであることが好ましい。電極間の接続抵抗を効果的に低くする観点からは、上記基材粒子は、有機コアと上記有機コアの表面上に配置された無機シェルとを有する有機無機ハイブリッド粒子であることが好ましい。 The organic-inorganic hybrid particles are preferably core-shell type organic-inorganic hybrid particles having a core and a shell disposed on the surface of the core. The core is preferably an organic core. The shell is preferably an inorganic shell. From the viewpoint of effectively reducing the connection resistance between the electrodes, the base material particles are preferably organic-inorganic hybrid particles having an organic core and an inorganic shell disposed on the surface of the organic core.
　上記有機コアを形成するための材料としては、上述した樹脂粒子を形成するための樹脂等が挙げられる。 Examples of the material for forming the organic core include the resin for forming the resin particles described above.
　上記無機シェルを形成するための材料としては、上述した基材粒子を形成するための無機物が挙げられる。上記無機シェルを形成するための材料は、シリカであることが好ましい。上記無機シェルは、上記コアの表面上で、金属アルコキシドをゾルゲル法によりシェル状物とした後、該シェル状物を焼結させることにより形成されていることが好ましい。上記金属アルコキシドはシランアルコキシドであることが好ましい。上記無機シェルはシランアルコキシドにより形成されていることが好ましい。 Examples of the material for forming the inorganic shell include inorganic substances for forming the above-described base material particles. The material for forming the inorganic shell is preferably silica. The inorganic shell is preferably formed on the surface of the core by forming a metal alkoxide into a shell by a sol-gel method and then sintering the shell. The metal alkoxide is preferably a silane alkoxide. The inorganic shell is preferably formed of a silane alkoxide.
　上記コアの粒子径は、好ましくは０．５μｍ以上、より好ましくは１μｍ以上であり、好ましくは１００μｍ以下、より好ましくは５０μｍ以下、更に好ましくは４０μｍ以下、特に好ましくは３０μｍ以下、最も好ましくは１５μｍ以下である。上記コアの粒子径が上記下限以上及び上記上限以下であると、電極間の電気的な接続により一層適した導電性粒子が得られ、基材粒子を導電性粒子の用途に好適に使用可能になる。例えば、上記コアの粒子径が上記下限以上及び上記上限以下であると、上記導電性粒子を用いて電極間を接続した場合に、導電性粒子と電極との接触面積が充分に大きくなり、かつ基材粒子の表面に導電部を形成する際、凝集した導電性粒子が形成され難くなる。また、導電性粒子を介して接続された電極間の間隔が大きくなりすぎず、かつ導電部が基材粒子の表面から剥離し難くなる。 The particle diameter of the core is preferably 0.5 μm or more, more preferably 1 μm or more, preferably 100 μm or less, more preferably 50 μm or less, still more preferably 40 μm or less, particularly preferably 30 μm or less, and most preferably 15 μm or less. It is. When the particle diameter of the core is not less than the above lower limit and not more than the above upper limit, conductive particles more suitable for electrical connection between electrodes can be obtained, and the base particles can be suitably used for the use of conductive particles. Become. For example, when the particle diameter of the core is not less than the lower limit and not more than the upper limit, when the electrodes are connected using the conductive particles, the contact area between the conductive particles and the electrodes is sufficiently large, and When the conductive portion is formed on the surface of the base particle, it is difficult to form aggregated conductive particles. Further, the distance between the electrodes connected via the conductive particles does not become too large, and the conductive portion is difficult to peel from the surface of the base particle.
　上記コアの粒子径は、上記コアが真球状である場合には直径を意味し、上記コアが真球状以外の形状である場合には、最大径を意味する。また、コアの粒子径は、コアを任意の粒子径測定装置により測定した平均粒子径を意味する。例えば、レーザー光散乱、電気抵抗値変化、撮像後の画像解析などの原理を用いた粒度分布測定機が利用できる。 The particle diameter of the core means a diameter when the core is a true sphere, and means a maximum diameter when the core is a shape other than a true sphere. Moreover, the particle diameter of a core means the average particle diameter which measured the core with arbitrary particle diameter measuring apparatuses. For example, a particle size distribution measuring machine using principles such as laser light scattering, electrical resistance value change, and image analysis after imaging can be used.
　上記シェルの厚みは、好ましくは１００ｎｍ以上、より好ましくは２００ｎｍ以上であり、好ましくは５μｍ以下、より好ましくは３μｍ以下である。上記シェルの厚みが上記下限以上及び上記上限以下であると、電極間の電気的な接続により一層適した導電性粒子が得られ、基材粒子を導電性粒子の用途に好適に使用可能になる。上記シェルの厚みは、基材粒子１個あたりの平均厚みである。ゾルゲル法の制御によって、上記シェルの厚みを制御可能である。 The thickness of the shell is preferably 100 nm or more, more preferably 200 nm or more, preferably 5 μm or less, more preferably 3 μm or less. When the thickness of the shell is not less than the above lower limit and not more than the above upper limit, conductive particles more suitable for electrical connection between the electrodes can be obtained, and the base particles can be suitably used for the use of conductive particles. . The thickness of the shell is an average thickness per base particle. The thickness of the shell can be controlled by controlling the sol-gel method.
　上記基材粒子が金属粒子である場合に、該金属粒子を形成するための金属としては、銀、銅、ニッケル、ケイ素、金及びチタン等が挙げられる。上記基材粒子が金属粒子である場合に、該金属粒子は銅粒子であることが好ましい。但し、上記基材粒子は金属粒子ではないことが好ましい。 When the substrate particles are metal particles, examples of the metal for forming the metal particles include silver, copper, nickel, silicon, gold, and titanium. When the base material particles are metal particles, the metal particles are preferably copper particles. However, the substrate particles are preferably not metal particles.
　上記基材粒子の粒子径は、好ましくは０．１μｍ以上、より好ましくは１μｍ以上、更に好ましくは１．５μｍ以上、特に好ましくは２μｍ以上であり、好ましくは１００μｍ以下、より好ましくは５０μｍ以下、より一層好ましくは４０μｍ以下、更に好ましくは２０μｍ以下、更に一層好ましくは１０μｍ以下、特に好ましくは５μｍ以下、最も好ましくは３μｍ以下である。上記基材粒子の粒子径が上記下限以上であると、導電性粒子と電極との接触面積が大きくなるため、電極間の導通信頼性をより一層高めることができ、導電性粒子を介して接続された電極間の接続抵抗をより一層低くすることができる。上記基材粒子の粒子径が上記上限以下であると、導電性粒子が十分に圧縮されやすく、電極間の接続抵抗をより一層低くすることができ、更に電極間の間隔をより小さくすることができる。 The particle diameter of the substrate particles is preferably 0.1 μm or more, more preferably 1 μm or more, further preferably 1.5 μm or more, particularly preferably 2 μm or more, preferably 100 μm or less, more preferably 50 μm or less, more More preferably, it is 40 μm or less, more preferably 20 μm or less, still more preferably 10 μm or less, particularly preferably 5 μm or less, and most preferably 3 μm or less. When the particle diameter of the base material particles is equal to or larger than the lower limit, the contact area between the conductive particles and the electrodes is increased, so that the conduction reliability between the electrodes can be further improved and the connection is made through the conductive particles. The connection resistance between the formed electrodes can be further reduced. When the particle diameter of the substrate particles is not more than the above upper limit, the conductive particles are easily compressed, the connection resistance between the electrodes can be further reduced, and the distance between the electrodes can be further reduced. it can.
　上記基材粒子の粒子径は、基材粒子が真球状である場合には、直径を示し、基材粒子が真球状ではない場合には、最大径を示す。 The particle diameter of the substrate particles indicates a diameter when the substrate particles are spherical, and indicates a maximum diameter when the substrate particles are not spherical.
　上記基材粒子の粒子径は、２μｍ以上、５μｍ以下であることが特に好ましい。上記基材粒子の粒子径が２μｍ以上、５μｍ以下の範囲内であると、電極間の間隔をより小さくすることができ、かつ導電層の厚みを厚くしても、小さい導電性粒子を得ることができる。 The particle diameter of the substrate particles is particularly preferably 2 μm or more and 5 μm or less. When the particle diameter of the substrate particles is in the range of 2 μm or more and 5 μm or less, the distance between the electrodes can be further reduced, and even if the thickness of the conductive layer is increased, small conductive particles can be obtained. Can do.
　上記基材粒子の表面上に導電部を形成する方法、並びに上記基材粒子の表面上又は上記第２の導電部の表面上にはんだ部を形成する方法は特に限定されない。上記導電部及び上記はんだ部を形成する方法としては、例えば、無電解めっきによる方法、電気めっきによる方法、物理的な衝突による方法、メカノケミカル反応による方法、物理的蒸着又は物理的吸着による方法、並びに金属粉末もしくは金属粉末とバインダーとを含むペーストを基材粒子の表面にコーティングする方法等が挙げられる。無電解めっき、電気めっき又は物理的な衝突による方法が好適である。上記物理的蒸着による方法としては、真空蒸着、イオンプレーティング及びイオンスパッタリング等の方法が挙げられる。また、上記物理的な衝突による方法では、例えば、シーターコンポーザ（徳寿工作所社製）等が用いられる。 The method for forming the conductive part on the surface of the base particle and the method for forming the solder part on the surface of the base particle or the surface of the second conductive part are not particularly limited. Examples of the method for forming the conductive portion and the solder portion include a method by electroless plating, a method by electroplating, a method by physical collision, a method by mechanochemical reaction, a method by physical vapor deposition or physical adsorption, And a method of coating the surface of the substrate particles with a paste containing metal powder or metal powder and a binder. Electroless plating, electroplating or physical collision methods are preferred. Examples of the method by physical vapor deposition include methods such as vacuum vapor deposition, ion plating, and ion sputtering. Further, in the method based on the physical collision, for example, a sheeter composer (manufactured by Tokuju Kogakusha Co., Ltd.) or the like is used.
　上記基材粒子の融点は、上記導電部及び上記はんだ部の融点よりも高いことが好ましい。上記基材粒子の融点は、好ましくは１６０℃を超え、より好ましくは３００℃を超え、更に好ましくは４００℃を超え、特に好ましくは４５０℃を超える。なお、上記基材粒子の融点は、４００℃未満であってもよい。上記基材粒子の融点は、１６０℃以下であってもよい。上記基材粒子の軟化点は２６０℃以上であることが好ましい。上記基材粒子の軟化点は２６０℃未満であってもよい。 The melting point of the base material particles is preferably higher than the melting points of the conductive part and the solder part. The melting point of the substrate particles is preferably higher than 160 ° C, more preferably higher than 300 ° C, still more preferably higher than 400 ° C, and particularly preferably higher than 450 ° C. The melting point of the substrate particles may be less than 400 ° C. The melting point of the substrate particles may be 160 ° C. or less. The softening point of the substrate particles is preferably 260 ° C. or higher. The softening point of the substrate particles may be less than 260 ° C.
　上記導電性粒子は、単層のはんだ部を有していてもよい。上記導電性粒子は、複数の層の導電部（はんだ部，第２の導電部）を有していてもよい。すなわち、上記導電性粒子では、導電部を２層以上積層してもよい。上記導電部が２層以上の場合、上記導電性粒子は、導電部の外表面部分にはんだを有することが好ましい。 The conductive particles may have a single layer solder portion. The conductive particles may have a plurality of layers of conductive parts (solder part, second conductive part). That is, in the conductive particles, two or more conductive portions may be stacked. When the conductive part has two or more layers, the conductive particles preferably have solder on the outer surface portion of the conductive part.
　上記はんだは、融点が４５０℃以下である金属（低融点金属）であることが好ましい。上記はんだ部は、融点が４５０℃以下である金属層（低融点金属層）であることが好ましい。上記低融点金属層は、低融点金属を含む層である。上記導電性粒子におけるはんだは、融点が４５０℃以下である金属粒子（低融点金属粒子）であることが好ましい。上記低融点金属粒子は、低融点金属を含む粒子である。該低融点金属とは、融点が４５０℃以下の金属を示す。低融点金属の融点は好ましくは３００℃以下、より好ましくは１６０℃以下である。また、上記導電性粒子におけるはんだは錫を含むことが好ましい。上記はんだ部に含まれる金属１００重量％中及び上記導電性粒子におけるはんだに含まれる金属１００重量％中、錫の含有量は好ましくは３０重量％以上、より好ましくは４０重量％以上、更に好ましくは７０重量％以上、特に好ましくは９０重量％以上である。上記導電性粒子におけるはんだに含まれる錫の含有量が上記下限以上であると、導電性粒子と電極との導通信頼性がより一層高くなる。 The solder is preferably a metal (low melting point metal) having a melting point of 450 ° C. or lower. The solder part is preferably a metal layer (low melting point metal layer) having a melting point of 450 ° C. or lower. The low melting point metal layer is a layer containing a low melting point metal. The solder in the conductive particles is preferably metal particles having a melting point of 450 ° C. or lower (low melting point metal particles). The low melting point metal particles are particles containing a low melting point metal. The low melting point metal is a metal having a melting point of 450 ° C. or lower. The melting point of the low melting point metal is preferably 300 ° C. or lower, more preferably 160 ° C. or lower. The solder in the conductive particles preferably contains tin. In 100% by weight of the metal contained in the solder part and 100% by weight of the metal contained in the solder in the conductive particles, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, and still more preferably. It is 70% by weight or more, particularly preferably 90% by weight or more. When the content of tin contained in the solder in the conductive particles is not less than the above lower limit, the conduction reliability between the conductive particles and the electrode is further enhanced.
　なお、上記錫の含有量は、高周波誘導結合プラズマ発光分光分析装置（堀場製作所社製「ＩＣＰ－ＡＥＳ」）、又は蛍光Ｘ線分析装置（島津製作所社製「ＥＤＸ－８００ＨＳ」）等を用いて測定可能である。 The tin content is determined using a high-frequency inductively coupled plasma emission spectrometer (“ICP-AES” manufactured by Horiba, Ltd.) or a fluorescent X-ray analyzer (“EDX-800HS” manufactured by Shimadzu). It can be measured.
　上記はんだを導電部の外表面部分に有する導電性粒子を用いることで、はんだが溶融して電極に接合し、はんだが電極間を導通させる。例えば、はんだと電極とが点接触ではなく面接触しやすいため、接続抵抗が低くなる。また、はんだを導電部の外表面部分に有する導電性粒子の使用により、はんだと電極との接合強度が高くなる結果、はんだと電極との剥離がより一層生じ難くなり、導通信頼性が効果的に高くなる。 Using the conductive particles having the solder on the outer surface portion of the conductive portion, the solder is melted and joined to the electrodes, and the solder conducts between the electrodes. For example, since the solder and the electrode are not in point contact but in surface contact, the connection resistance is lowered. In addition, the use of conductive particles having solder on the outer surface of the conductive portion increases the bonding strength between the solder and the electrode, and as a result, the solder and the electrode are more unlikely to peel off, and the conduction reliability is effective. To be high.
　上記はんだ部及び上記はんだ粒子を構成する低融点金属は特に限定されない。該低融点金属は、錫、又は錫を含む合金であることが好ましい。該合金は、錫－銀合金、錫－銅合金、錫－銀－銅合金、錫－ビスマス合金、錫－亜鉛合金、錫－インジウム合金等が挙げられる。電極に対する濡れ性に優れることから、上記低融点金属は、錫、錫－銀合金、錫－銀－銅合金、錫－ビスマス合金、錫－インジウム合金であることが好ましい。錫－ビスマス合金、錫－インジウム合金であることがより好ましい。 The low melting point metal constituting the solder part and the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. The low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, or tin-indium alloy because of its excellent wettability to the electrode. More preferred are a tin-bismuth alloy and a tin-indium alloy.
　上記はんだ（はんだ部）を構成する材料は、ＪＩＳ　Ｚ３００１：溶接用語に基づき、液相線が４５０℃以下である溶加材であることが好ましい。上記はんだの組成としては、例えば亜鉛、金、銀、鉛、銅、錫、ビスマス、インジウムなどを含む金属組成が挙げられる。低融点で鉛フリーである錫－インジウム系（１１７℃共晶）、又は錫－ビスマス系（１３９℃共晶）が好ましい。すなわち、上記はんだは、鉛を含まないことが好ましく、錫とインジウムとを含むはんだ、又は錫とビスマスとを含むはんだであることが好ましい。 The material constituting the solder (solder part) is preferably a filler material having a liquidus of 450 ° C. or lower based on JIS Z3001: Welding terms. Examples of the composition of the solder include a metal composition containing zinc, gold, silver, lead, copper, tin, bismuth, indium and the like. A tin-indium system (117 ° C. eutectic) or a tin-bismuth system (139 ° C. eutectic), which has a low melting point and is free of lead, is preferred. That is, the solder preferably does not contain lead, and is preferably a solder containing tin and indium or a solder containing tin and bismuth.
　上記はんだと電極との接合強度をより一層高めるために、上記導電性粒子におけるはんだは、ニッケル、銅、アンチモン、アルミニウム、亜鉛、鉄、金、チタン、リン、ゲルマニウム、テルル、コバルト、ビスマス、マンガン、クロム、モリブデン、パラジウム等の金属を含んでいてもよい。また、はんだと電極との接合強度をさらに一層高める観点からは、上記導電性粒子におけるはんだは、ニッケル、銅、アンチモン、アルミニウム又は亜鉛を含むことが好ましい。はんだ部又は導電性粒子におけるはんだと電極との接合強度をより一層高める観点からは、接合強度を高めるためのこれらの金属の含有量は、上記導電性粒子におけるはんだ１００重量％中、好ましくは０．０００１重量％以上、好ましくは１重量％以下である。 In order to further increase the bonding strength between the solder and the electrode, the solder in the conductive particles is nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese. Further, it may contain a metal such as chromium, molybdenum and palladium. Moreover, from the viewpoint of further increasing the bonding strength between the solder and the electrode, the solder in the conductive particles preferably contains nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further increasing the bonding strength between the solder and the electrode in the solder portion or the conductive particles, the content of these metals for increasing the bonding strength is preferably 0% in 100% by weight of the solder in the conductive particles. 0.0001% by weight or more, preferably 1% by weight or less.
　上記第２の導電部の融点は、上記はんだ部の融点よりも高いことが好ましい。上記第２の導電部の融点は好ましくは１６０℃を超え、より好ましくは３００℃を超え、更に好ましくは４００℃を超え、更に一層好ましくは４５０℃を超え、特に好ましくは５００℃を超え、最も好ましくは６００℃を超える。上記はんだ部は融点が低いために導電接続時に溶融する。上記第２の導電部は導電接続時に溶融しないことが好ましい。上記導電性粒子は、はんだを溶融させて用いられることが好ましく、上記はんだ部を溶融させて用いられることが好ましく、上記はんだ部を溶融させてかつ上記第２の導電部を溶融させずに用いられることが好ましい。上記第２の導電部の融点が上記はんだ部の融点をよりも高いことによって、導電接続時に、上記第２の導電部を溶融させずに、上記はんだ部のみを溶融させることができる。 The melting point of the second conductive part is preferably higher than the melting point of the solder part. The melting point of the second conductive part is preferably more than 160 ° C, more preferably more than 300 ° C, still more preferably more than 400 ° C, still more preferably more than 450 ° C, particularly preferably more than 500 ° C, most preferably Preferably it exceeds 600 degreeC. Since the solder part has a low melting point, it melts during conductive connection. It is preferable that the second conductive portion does not melt during conductive connection. The conductive particles are preferably used by melting solder, preferably used by melting the solder part, and used without melting the solder part and melting the second conductive part. It is preferred that Since the melting point of the second conductive part is higher than the melting point of the solder part, it is possible to melt only the solder part without melting the second conductive part during conductive connection.
　上記はんだ部の融点と上記第２の導電部との融点との差の絶対値は、０℃を超え、好ましくは５℃以上、より好ましくは１０℃以上、更に好ましくは３０℃以上、特に好ましくは５０℃以上、最も好ましくは１００℃以上である。 The absolute value of the difference between the melting point of the solder part and the melting point of the second conductive part exceeds 0 ° C, preferably 5 ° C or more, more preferably 10 ° C or more, still more preferably 30 ° C or more, particularly preferably Is 50 ° C. or higher, most preferably 100 ° C. or higher.
　上記第２の導電部は、金属を含むことが好ましい。上記第２の導電部を構成する金属は、特に限定されない。該金属としては、例えば、金、銀、銅、白金、パラジウム、亜鉛、鉛、アルミニウム、コバルト、インジウム、ニッケル、クロム、チタン、アンチモン、ビスマス、ゲルマニウム及びカドミウム、並びにこれらの合金等が挙げられる。また、上記金属として、錫ドープ酸化インジウム（ＩＴＯ）を用いてもよい。上記金属は１種のみが用いられてもよく、２種以上が併用されてもよい。 The second conductive part preferably contains a metal. The metal which comprises the said 2nd electroconductive part is not specifically limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and alloys thereof. Further, tin-doped indium oxide (ITO) may be used as the metal. As for the said metal, only 1 type may be used and 2 or more types may be used together.
　上記第２の導電部は、ニッケル層、パラジウム層、銅層又は金層であることが好ましく、ニッケル層又は金層であることがより好ましく、銅層であることが更に好ましい。導電性粒子は、ニッケル層、パラジウム層、銅層又は金層を有することが好ましく、ニッケル層又は金層を有することがより好ましく、銅層を有することが更に好ましい。これらの好ましい導電部を有する導電性粒子を電極間の接続に用いることにより、電極間の接続抵抗がより一層低くなる。また、これらの好ましい導電部の表面には、はんだ部をより一層容易に形成できる。 The second conductive part is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and even more preferably a copper layer. The conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer. By using the conductive particles having these preferable conductive parts for the connection between the electrodes, the connection resistance between the electrodes is further reduced. Moreover, a solder part can be more easily formed on the surface of these preferable conductive parts.
　上記はんだ部の厚みは、好ましくは０．００５μｍ以上、より好ましくは０．０１μｍ以上であり、好ましくは１０μｍ以下、より好ましくは１μｍ以下、更に好ましくは０．３μｍ以下である。はんだ部の厚みが上記下限以上及び上記上限以下であると、充分な導電性が得られ、かつ導電性粒子が硬くなりすぎずに、電極間の接続の際に導電性粒子を充分に変形する。 The thickness of the solder part is preferably 0.005 μm or more, more preferably 0.01 μm or more, preferably 10 μm or less, more preferably 1 μm or less, and still more preferably 0.3 μm or less. When the thickness of the solder part is not less than the above lower limit and not more than the above upper limit, sufficient conductivity can be obtained, and the conductive particles are not too hard, and the conductive particles are sufficiently deformed at the time of connection between the electrodes. .
　上記導電性粒子の平均粒子径は、好ましくは０．５μｍ以上、より好ましくは１μｍ以上、更に好ましくは３μｍ以上であり、好ましくは１００μｍ以下、より好ましくは５０μｍ以下、更に好ましくは４０μｍ以下、特に好ましくは３０μｍ以下である。上記導電性粒子が上記下限以上及び上記上限以下であると、電極上に導電性粒子におけるはんだをより一層効率的に配置することができ、電極間に導電性粒子におけるはんだを多く配置することが容易であり、導通信頼性がより一層高くなる。 The average particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, further preferably 3 μm or more, preferably 100 μm or less, more preferably 50 μm or less, still more preferably 40 μm or less, particularly preferably. Is 30 μm or less. When the conductive particles are not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and a large amount of the solder in the conductive particles can be arranged between the electrodes. It is easy and the conduction reliability is further increased.
　上記導電性粒子の「平均粒子径」は、数平均粒子径を示す。導電性粒子の平均粒子径は、例えば、任意の導電性粒子５０個を電子顕微鏡又は光学顕微鏡にて観察し、平均値を算出することにより求められる。 The “average particle size” of the conductive particles indicates a number average particle size. The average particle diameter of the conductive particles is obtained, for example, by observing 50 arbitrary conductive particles with an electron microscope or an optical microscope and calculating an average value.
　上記導電性粒子の粒子径の変動係数は、好ましくは５％以上、より好ましくは１０％以上であり、好ましくは４０％以下、より好ましくは３０％以下である。上記粒子径の変動係数が上記下限以上及び上記上限以下であると、電極上に導電性粒子におけるはんだをより一層効率的に配置することができる。但し、上記導電性粒子の粒子径の変動係数は、５％未満であってもよい。 The coefficient of variation of the particle diameter of the conductive particles is preferably 5% or more, more preferably 10% or more, preferably 40% or less, more preferably 30% or less. When the variation coefficient of the particle diameter is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrode. However, the coefficient of variation of the particle diameter of the conductive particles may be less than 5%.
　上記変動係数（ＣＶ値）は下記式で表される。 The above coefficient of variation (CV value) is expressed by the following equation.
　ＣＶ値（％）＝（ρ／Ｄｎ）×１００
　ρ：導電性粒子の粒子径の標準偏差
　Ｄｎ：導電性粒子の粒子径の平均値 CV value (%) = (ρ / Dn) × 100
ρ: Standard deviation of particle diameter of conductive particles Dn: Average value of particle diameter of conductive particles
　上記導電性粒子の形状は特に限定されない。上記導電性粒子の形状は、球状であってもよく、扁平状などの球形状以外の形状であってもよい。 The shape of the conductive particles is not particularly limited. The conductive particles may have a spherical shape or a shape other than a spherical shape such as a flat shape.
　上記導電性粒子の酸価は好ましくは０．１ｍｇ／ＫＯＨ以上、より好ましくは１ｍｇ／ＫＯＨ以上、好ましくは１０ｍｇ／ＫＯＨ以下、より好ましくは７ｍｇ／ＫＯＨ以下である。上記酸価が上記下限以上及び上記上限以下であると、硬化物の耐熱性がより一層高くなり、硬化物の変色がより一層抑えられる。 The acid value of the conductive particles is preferably 0.1 mg / KOH or more, more preferably 1 mg / KOH or more, preferably 10 mg / KOH or less, more preferably 7 mg / KOH or less. When the acid value is not less than the above lower limit and not more than the above upper limit, the heat resistance of the cured product is further enhanced, and discoloration of the cured product is further suppressed.
　上記酸価は以下のようにして測定することができる。エタノールにフェノールフタレインを入れ、０．１Ｎ－ＫＯＨにて中和した溶液５０ｍｌに対し、導電性粒子１ｇを入れ、超音波処理にて分散させた後、０．１Ｎ－ＫＯＨにて滴定する。 The acid value can be measured as follows. 1 g of conductive particles is added to 50 ml of a solution obtained by adding phenolphthalein to ethanol and neutralizing with 0.1N-KOH, and dispersing by ultrasonication, followed by titration with 0.1N-KOH.
　上記導電材料１００重量％中、上記導電性粒子の含有量は好ましくは１重量％以上、より好ましくは２重量％以上、更に好ましくは１０重量％以上、特に好ましくは２０重量％以上、最も好ましくは３０重量％以上であり、好ましくは８０重量％以下、より好ましくは６０重量％以下、更に好ましくは５０重量％以下である。上記導電性粒子の含有量が上記下限以上及び上記上限以下であると、電極上に導電性粒子におけるはんだをより一層効率的に配置することができ、電極間に導電性粒子におけるはんだを多く配置することが容易であり、導通信頼性がより一層高くなる。導通信頼性をより一層高める観点からは、上記導電性粒子の含有量は多い方が好ましい。 The content of the conductive particles in 100% by weight of the conductive material is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, most preferably. It is 30% by weight or more, preferably 80% by weight or less, more preferably 60% by weight or less, and still more preferably 50% by weight or less. When the content of the conductive particles is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be arranged more efficiently on the electrodes, and more solder in the conductive particles is arranged between the electrodes. It is easy to do and the conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, the content of the conductive particles is preferably large.
　（熱硬化性化合物）
　上記熱硬化性化合物は、加熱により硬化可能な化合物である。上記熱硬化性化合物としては、オキセタン化合物、エポキシ化合物、エピスルフィド化合物、（メタ）アクリル化合物、フェノール化合物、アミノ化合物、不飽和ポリエステル化合物、ポリウレタン化合物、シリコーン化合物及びポリイミド化合物等が挙げられる。導電材料の硬化性及び粘度をより一層良好にし、接続信頼性をより一層高める観点から、エポキシ化合物又はエピスルフィド化合物が好ましい。上記熱硬化性化合物は、１種のみが用いられてもよく、２種以上が併用されてもよい。 (Thermosetting compound)
The thermosetting compound is a compound that can be cured by heating. Examples of the thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth) acrylic compounds, phenolic compounds, amino compounds, unsaturated polyester compounds, polyurethane compounds, silicone compounds, and polyimide compounds. From the viewpoint of further improving the curability and viscosity of the conductive material and further improving the connection reliability, an epoxy compound or an episulfide compound is preferable. As for the said thermosetting compound, only 1 type may be used and 2 or more types may be used together.
　本発明では、上記熱硬化性化合物は、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含む。この特定の熱硬化性の使用により、硬化物の透明性が高くなり、硬化物の耐熱性が高くなる。また、上記熱硬化性化合物がトリアジン骨格を有することで、硬化物の誘電率が効果的に低くなる。 In the present invention, the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton. By using this specific thermosetting property, the transparency of the cured product is increased, and the heat resistance of the cured product is increased. Moreover, the dielectric constant of hardened | cured material becomes low effectively because the said thermosetting compound has a triazine frame | skeleton.
　トリアジン骨格を有する熱硬化性化合物としては、トリアジントリグリシジルエーテル等が挙げられ、日産化学工業社製ＴＥＰＩＣシリーズ（ＴＥＰＩＣ－Ｇ、ＴＥＰＩＣ－Ｓ、ＴＥＰＩＣ－ＳＳ、ＴＥＰＩＣ－ＨＰ、ＴＥＰＩＣ－Ｌ、ＴＥＰＩＣ－ＰＡＳ、ＴＥＰＩＣ－ＶＬ、ＴＥＰＩＣ－ＵＣ）等が挙げられる。上記チイラン基及びトリアジン骨格を有する熱硬化性化合物は、例えば、上記トリアジン骨格を有する熱硬化性化合物のエポキシ基をチイラン基に変換することにより得ることができる。エポキシ基をチイラン基に変換する方法は、公知である。 Examples of the thermosetting compound having a triazine skeleton include triazine triglycidyl ether and the like. TEPIC series (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L, TEPIC-L, manufactured by Nissan Chemical Industries, Ltd.) PAS, TEPIC-VL, TEPIC-UC) and the like. The thermosetting compound having the thiirane group and the triazine skeleton can be obtained, for example, by converting the epoxy group of the thermosetting compound having the triazine skeleton into a thiirane group. Methods for converting epoxy groups to thiirane groups are known.
　上記チイラン基及びトリアジン骨格を有する熱硬化性化合物の融点は、好ましくは１４０℃以上、より好ましくは１５０℃以上である。上記融点が上記下限以上であると、電極間に導電性粒子がより一層効率的に配置される。上記チイラン基及びトリアジン骨格を有する熱硬化性化合物の融点は、上記導電性粒子におけるはんだの融点以上であることが好ましい。 The melting point of the thermosetting compound having a thiirane group and a triazine skeleton is preferably 140 ° C. or higher, more preferably 150 ° C. or higher. When the melting point is equal to or higher than the lower limit, the conductive particles are more efficiently arranged between the electrodes. The melting point of the thermosetting compound having a thiirane group and a triazine skeleton is preferably equal to or higher than the melting point of the solder in the conductive particles.
　上記熱硬化性化合物は、チイラン基及びトリアジン骨格を有する熱硬化性化合物とは異なる熱硬化性化合物を含んでいてもよい。上記チイラン基及びトリアジン骨格を有する熱硬化性化合物とは異なる熱硬化性化合物は、チイラン基を有さない熱硬化性化合物であってもよく、トリアジン骨格を有さない熱硬化性化合物であってもよく、エポキシ化合物であってもよい。 The thermosetting compound may contain a thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton. The thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton may be a thermosetting compound having no thiirane group or a thermosetting compound having no triazine skeleton. Or an epoxy compound.
　上記エポキシ化合物としては、芳香族エポキシ化合物が挙げられる。レゾルシノール型エポキシ化合物、ナフタレン型エポキシ化合物、ビフェニル型エポキシ化合物、ベンゾフェノン型エポキシ化合物等の結晶性エポキシ化合物が好ましい。常温（２３℃）で固体であり、かつ溶融温度がはんだの融点以下であるエポキシ化合物が好ましい。溶融温度は好ましくは１００℃以下、より好ましくは８０℃以下であり、好ましくは４０℃以上である。上記の好ましいエポキシ化合物を用いることで、接続対象部材を貼り合わせた段階では、粘度が高く、搬送等の衝撃により加速度が付与された際に、第１の接続対象部材と、第２の接続対象部材との位置ずれを抑制することができ、なおかつ、硬化時の熱により、導電材料の粘度を大きく低下させることができ、はんだの凝集を効率よく進行させることができる。 The above-mentioned epoxy compound includes an aromatic epoxy compound. Crystalline epoxy compounds such as resorcinol-type epoxy compounds, naphthalene-type epoxy compounds, biphenyl-type epoxy compounds, and benzophenone-type epoxy compounds are preferred. An epoxy compound that is solid at normal temperature (23 ° C.) and has a melting temperature equal to or lower than the melting point of the solder is preferable. The melting temperature is preferably 100 ° C. or lower, more preferably 80 ° C. or lower, and preferably 40 ° C. or higher. By using the preferable epoxy compound, the first connection target member and the second connection target are high when the connection target member is bonded to each other when the viscosity is high and acceleration is applied by impact such as conveyance. The positional deviation with respect to the member can be suppressed, and the viscosity of the conductive material can be greatly reduced by the heat at the time of curing, so that the aggregation of the solder can proceed efficiently.
　上記導電材料１００重量％中、上記熱硬化性化合物の全体の含有量は、好ましくは２０重量％以上、より好ましくは４０重量％以上、更に好ましくは５０重量％以上であり、好ましくは９９重量％以下、より好ましくは９８重量％以下、更に好ましくは９０重量％以下、特に好ましくは８０重量％以下である。上記熱硬化性化合物の含有量が、上記下限以上及び上記上限以下であると、導電性粒子におけるはんだを電極上により一層効率的に配置し、電極間の位置ずれをより一層抑制し、電極間の導通信頼性をより一層高めることができる。耐衝撃性をより一層高める観点からは、上記熱硬化性化合物の含有量は多い方が好ましい。 The total content of the thermosetting compound in 100% by weight of the conductive material is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight. Hereinafter, it is more preferably 98% by weight or less, further preferably 90% by weight or less, and particularly preferably 80% by weight or less. When the content of the thermosetting compound is not less than the above lower limit and not more than the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and the displacement between the electrodes can be further suppressed, The conduction reliability can be further improved. From the viewpoint of further improving the impact resistance, it is preferable that the content of the thermosetting compound is large.
　上記導電材料１００重量％中、上記チイラン基及びトリアジン骨格を有する熱硬化性化合物の含有量は、好ましくは１０重量％以上、より好ましくは２０重量％以上であり、好ましくは９０重量％以下、より好ましくは８０重量％以下である。上記チイラン基及びトリアジン骨格を有する熱硬化性化合物の含有量が上記下限以上及び上記上限以下であると、硬化物の透明性及び耐熱性が効果的に高くなる。 In 100% by weight of the conductive material, the content of the thermosetting compound having the thiirane group and the triazine skeleton is preferably 10% by weight or more, more preferably 20% by weight or more, and preferably 90% by weight or less. Preferably it is 80 weight% or less. When the content of the thermosetting compound having the thiirane group and the triazine skeleton is not less than the above lower limit and not more than the above upper limit, the transparency and heat resistance of the cured product are effectively increased.
　（熱硬化剤）
　上記熱硬化剤は、上記熱硬化性化合物を熱硬化させる。上記熱硬化剤としては、イミダゾール硬化剤、フェノール硬化剤、チオール硬化剤、アミン硬化剤、酸無水物硬化剤、熱カチオン開始剤（熱カチオン硬化剤）及び熱ラジカル発生剤等がある。上記熱硬化剤は、１種のみが用いられてもよく、２種以上が併用されてもよい。 (Thermosetting agent)
The thermosetting agent thermosets the thermosetting compound. Examples of the thermosetting agent include an imidazole curing agent, a phenol curing agent, a thiol curing agent, an amine curing agent, an acid anhydride curing agent, a thermal cation initiator (thermal cation curing agent), and a thermal radical generator. As for the said thermosetting agent, only 1 type may be used and 2 or more types may be used together.
　導電材料を低温でより一層速やかに硬化可能とする観点からは、上記熱硬化剤は、イミダゾール硬化剤、チオール硬化剤、又はアミン硬化剤であることが好ましい。また、上記熱硬化性化合物と上記熱硬化剤とを混合したときの保存安定性を高める観点からは、上記熱硬化剤は、潜在性の硬化剤であることが好ましい。潜在性の硬化剤は、潜在性イミダゾール硬化剤、潜在性チオール硬化剤又は潜在性アミン硬化剤であることが好ましい。なお、上記熱硬化剤は、ポリウレタン樹脂又はポリエステル樹脂等の高分子物質で被覆されていてもよい。 From the viewpoint of enabling the conductive material to be cured more rapidly at a low temperature, the thermosetting agent is preferably an imidazole curing agent, a thiol curing agent, or an amine curing agent. Further, from the viewpoint of enhancing the storage stability when the thermosetting compound and the thermosetting agent are mixed, the thermosetting agent is preferably a latent curing agent. The latent curing agent is preferably a latent imidazole curing agent, a latent thiol curing agent, or a latent amine curing agent. In addition, the said thermosetting agent may be coat | covered with polymeric substances, such as a polyurethane resin or a polyester resin.
　上記イミダゾール硬化剤としては、特に限定されず、２－メチルイミダゾール、２－エチル－４－メチルイミダゾール、１－シアノエチル－２－フェニルイミダゾール、１－シアノエチル－２－フェニルイミダゾリウムトリメリテート、２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジン及び２，４－ジアミノ－６－［２’－メチルイミダゾリル－（１’）］－エチル－ｓ－トリアジンイソシアヌル酸付加物等が挙げられる。 The imidazole curing agent is not particularly limited, and 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2, 4-Diamino-6- [2'-methylimidazolyl- (1 ')]-ethyl-s-triazine and 2,4-diamino-6- [2'-methylimidazolyl- (1')]-ethyl-s- Examples include triazine isocyanuric acid adducts.
　上記チオール硬化剤としては、特に限定されず、トリメチロールプロパントリス－３－メルカプトプロピオネート、ペンタエリスリトールテトラキス－３－メルカプトプロピオネート及びジペンタエリスリトールヘキサ－３－メルカプトプロピオネート等が挙げられる。 The thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tris-3-mercaptopropionate, pentaerythritol tetrakis-3-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .
　上記チオール硬化剤の溶解度パラメーターは、好ましくは９．５以上、好ましくは１２以下である。上記溶解度パラメーターは、Ｆｅｄｏｒｓ法にて計算される。例えば、トリメチロールプロパントリス－３－メルカプトプロピオネートの溶解度パラメーターは９．６、ジペンタエリスリトールヘキサ－３－メルカプトプロピオネートの溶解度パラメーターは１１．４である。 The solubility parameter of the thiol curing agent is preferably 9.5 or more, and preferably 12 or less. The solubility parameter is calculated by the Fedors method. For example, the solubility parameter of trimethylolpropane tris-3-mercaptopropionate is 9.6, and the solubility parameter of dipentaerythritol hexa-3-mercaptopropionate is 11.4.
　上記アミン硬化剤としては、特に限定されず、ヘキサメチレンジアミン、オクタメチレンジアミン、デカメチレンジアミン、３，９－ビス（３－アミノプロピル）－２，４，８，１０－テトラスピロ［５．５］ウンデカン、ビス（４－アミノシクロヘキシル）メタン、メタフェニレンジアミン及びジアミノジフェニルスルホン等が挙げられる。 The amine curing agent is not particularly limited, and hexamethylenediamine, octamethylenediamine, decamethylenediamine, 3,9-bis (3-aminopropyl) -2,4,8,10-tetraspiro [5.5]. Examples include undecane, bis (4-aminocyclohexyl) methane, metaphenylenediamine, and diaminodiphenylsulfone.
　上記熱カチオン開始剤（熱カチオン硬化剤）としては、ヨードニウム系カチオン硬化剤、オキソニウム系カチオン硬化剤及びスルホニウム系カチオン硬化剤等が挙げられる。上記ヨードニウム系カチオン硬化剤としては、ビス（４－ｔｅｒｔ－ブチルフェニル）ヨードニウムヘキサフルオロホスファート等が挙げられる。上記オキソニウム系カチオン硬化剤としては、トリメチルオキソニウムテトラフルオロボラート等が挙げられる。上記スルホニウム系カチオン硬化剤としては、トリ－ｐ－トリルスルホニウムヘキサフルオロホスファート等が挙げられる。 Examples of the thermal cation initiator (thermal cation curing agent) include iodonium cation curing agents, oxonium cation curing agents, and sulfonium cation curing agents. Examples of the iodonium-based cationic curing agent include bis (4-tert-butylphenyl) iodonium hexafluorophosphate. Examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate. Examples of the sulfonium-based cationic curing agent include tri-p-tolylsulfonium hexafluorophosphate.
　上記熱ラジカル発生剤としては、特に限定されず、アゾ化合物及び有機過酸化物等が挙げられる。上記アゾ化合物としては、アゾビスイソブチロニトリル（ＡＩＢＮ）等が挙げられる。上記有機過酸化物としては、ジ－ｔｅｒｔ－ブチルペルオキシド及びメチルエチルケトンペルオキシド等が挙げられる。 The thermal radical generator is not particularly limited, and examples thereof include azo compounds and organic peroxides. Examples of the azo compound include azobisisobutyronitrile (AIBN). Examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
　上記熱硬化剤の反応開始温度は、好ましくは５０℃以上、より好ましくは７０℃以上、更に好ましくは８０℃以上であり、好ましくは２５０℃以下、より好ましくは２００℃以下、更に好ましくは１５０℃以下、特に好ましくは１４０℃以下である。上記熱硬化剤の反応開始温度が上記下限以上及び上記上限以下であると、はんだが電極上により一層効率的に配置される。上記熱硬化剤の反応開始温度は８０℃以上、１４０℃以下であることが特に好ましい。 The reaction initiation temperature of the thermosetting agent is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 250 ° C. or lower, more preferably 200 ° C. or lower, still more preferably 150 ° C. Hereinafter, it is particularly preferably 140 ° C. or lower. When the reaction start temperature of the thermosetting agent is not less than the above lower limit and not more than the above upper limit, the solder is more efficiently arranged on the electrode. The reaction initiation temperature of the thermosetting agent is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
　はんだを電極上により一層効率的に配置する観点からは、上記熱硬化剤の反応開始温度は、上記導電性粒子におけるはんだの融点よりも、高いことが好ましく、５℃以上高いことがより好ましく、１０℃以上高いことが更に好ましい。 From the viewpoint of more efficiently arranging the solder on the electrode, the reaction initiation temperature of the thermosetting agent is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, More preferably, it is 10 ° C. or higher.
　上記熱硬化剤の反応開始温度は、ＤＳＣでの発熱ピークの立ち上がり開始の温度を意味する。 The reaction start temperature of the thermosetting agent means the temperature at which the exothermic peak of DSC starts to rise.
　上記熱硬化剤の含有量は特に限定されない。上記熱硬化性化合物の全体１００重量部に対して、上記熱硬化剤の含有量は、好ましくは０．０１重量部以上、より好ましくは１重量部以上であり、好ましくは２００重量部以下、より好ましくは１００重量部以下、更に好ましくは７５重量部以下である。熱硬化剤の含有量が上記下限以上であると、導電材料を充分に硬化させることが容易である。熱硬化剤の含有量が上記上限以下であると、硬化後に硬化に関与しなかった余剰の熱硬化剤が残存し難くなり、かつ硬化物の耐熱性がより一層高くなる。 The content of the thermosetting agent is not particularly limited. The content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, based on 100 parts by weight of the whole thermosetting compound. The amount is preferably 100 parts by weight or less, more preferably 75 parts by weight or less. When the content of the thermosetting agent is not less than the above lower limit, it is easy to sufficiently cure the conductive material. When the content of the thermosetting agent is not more than the above upper limit, it is difficult for an excess thermosetting agent that did not participate in curing after curing to remain, and the heat resistance of the cured product is further enhanced.
　（フラックス）
　上記導電ペーストは、フラックスを含むことが好ましい。フラックスの使用により、はんだを電極上により一層効果的に配置することができる。該フラックスは特に限定されない。フラックスとして、はんだ接合等に一般的に用いられているフラックスを使用できる。 (flux)
The conductive paste preferably contains a flux. By using flux, the solder can be more effectively placed on the electrode. The flux is not particularly limited. As the flux, a flux generally used for soldering or the like can be used.
　上記フラックスとしては、例えば、塩化亜鉛、塩化亜鉛と無機ハロゲン化物との混合物、塩化亜鉛と無機酸との混合物、溶融塩、リン酸、リン酸の誘導体、有機ハロゲン化物、ヒドラジン、有機酸及び松脂等が挙げられる。上記フラックスは１種のみが用いられてもよく、２種以上が併用されてもよい。 Examples of the flux include zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, phosphoric acid, a derivative of phosphoric acid, an organic halide, hydrazine, an organic acid, and pine resin. Etc. As for the said flux, only 1 type may be used and 2 or more types may be used together.
　上記溶融塩としては、塩化アンモニウム等が挙げられる。上記有機酸としては、乳酸、クエン酸、ステアリン酸、グルタミン酸及びグルタル酸等が挙げられる。上記松脂としては、活性化松脂及び非活性化松脂等が挙げられる。上記フラックスは、カルボキシル基を２個以上有する有機酸、松脂であることが好ましい。上記フラックスは、カルボキシル基を２個以上有する有機酸であってもよく、松脂であってもよい。カルボキシル基を２個以上有する有機酸、松脂の使用により、電極間の導通信頼性がより一層高くなる。 Examples of the molten salt include ammonium chloride. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the pine resin include activated pine resin and non-activated pine resin. The flux is preferably an organic acid having two or more carboxyl groups, pine resin. The flux may be an organic acid having two or more carboxyl groups, or pine resin. By using an organic acid having two or more carboxyl groups, pine resin, the conduction reliability between the electrodes is further enhanced.
　上記松脂はアビエチン酸を主成分とするロジン類である。フラックスは、ロジン類であることが好ましく、アビエチン酸であることがより好ましい。この好ましいフラックスの使用により、電極間の導通信頼性がより一層高くなる。 The above rosins are rosins whose main component is abietic acid. The flux is preferably rosins, and more preferably abietic acid. By using this preferable flux, the conduction reliability between the electrodes is further enhanced.
　上記フラックスは、アミド基と芳香族骨格とを有するフラックスであるか、又は、アミド基を有し、かつカルボン酸又はカルボン酸無水物とｐＫａが９．５以下であるアミノ基含有化合物との反応物であるフラックスであることが好ましい。この場合には、導電材料の保存安定性が高くなり、電極間の接続時に導電性粒子を除く成分が過度に流れ難く、接着力を高めて導通信頼性を高めることができる。 The flux is a flux having an amide group and an aromatic skeleton, or a reaction between an amide group and a carboxylic acid or carboxylic anhydride and an amino group-containing compound having a pKa of 9.5 or less. It is preferable that the flux is a product. In this case, the storage stability of the conductive material is increased, the components excluding the conductive particles are difficult to flow excessively at the time of connection between the electrodes, and it is possible to increase the adhesive force and increase the conduction reliability.
　上記フラックスは、アミド基と芳香族骨格とを有するフラックスであることが好ましく、アミド基を有し、かつカルボン酸又はカルボン酸無水物とｐＫａが９．５以下であるアミノ基含有化合物との反応物であるフラックスであることも好ましい。上記フラックスは、１種のみが用いられてもよく、２種以上が併用されてもよい。 The flux is preferably a flux having an amide group and an aromatic skeleton, and the reaction of an amide group-containing compound having an amide group and a carboxylic acid or carboxylic acid anhydride with a pKa of 9.5 or less. It is also preferable that the flux is a product. As for the said flux, only 1 type may be used and 2 or more types may be used together.
　なお、上記フラックスが、カルボン酸又はカルボン酸無水物とｐＫａが９．５以下であるアミノ基含有化合物との反応物である場合に、ｐＫａが特定の範囲にあるアミノ基含有化合物を用いている反応物の範囲を構造又は特性により直接特定することは不可能である。 When the flux is a reaction product of a carboxylic acid or a carboxylic acid anhydride and an amino group-containing compound having a pKa of 9.5 or less, an amino group-containing compound having a pKa in a specific range is used. It is not possible to specify the range of reactants directly by structure or property.
　導電材料の保存安定性を効果的に高くし、電極間の接続時に導電性粒子を除く成分をより一層流れ難くする観点からは、上記フラックスは、２５℃で固体であることが好ましい。 From the viewpoint of effectively increasing the storage stability of the conductive material and making it difficult for components other than the conductive particles to flow during connection between the electrodes, the flux is preferably solid at 25 ° C.
　上記フラックスは、例えば、カルボン酸又はカルボン酸無水物とアミノ基含有化合物とを反応させることにより得ることができる。 The flux can be obtained, for example, by reacting a carboxylic acid or carboxylic acid anhydride with an amino group-containing compound.
　上記カルボン酸又はカルボン酸無水物としては、コハク酸、グルタル酸、アジピン酸、ピメリン酸、スベリン酸、及びリンゴ酸等が挙げられる。 Examples of the carboxylic acid or carboxylic acid anhydride include succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, and malic acid.
　上記アミノ基含有化合物としては、ベンジルアミン、アニリン及びジフェニルアミン等が挙げられる。導電材料の保存安定性を効果的に高くし、電極間の接続時に導電性粒子を除く成分をより一層流れ難くする観点からは、上記アミノ基含有化合物は、芳香族アミン化合物であることが好ましい。 Examples of the amino group-containing compound include benzylamine, aniline and diphenylamine. The amino group-containing compound is preferably an aromatic amine compound from the viewpoint of effectively increasing the storage stability of the conductive material and making it more difficult for components other than the conductive particles to flow during connection between the electrodes. .
　上記フラックスの活性温度（融点）は、好ましくは５０℃以上、より好ましくは７０℃以上、更に好ましくは８０℃以上であり、好ましくは２００℃以下、より好ましくは１９０℃以下、より一層好ましくは１６０℃以下、更に好ましくは１５０℃以下、更に一層好ましくは１４０℃以下である。上記フラックスの活性温度が上記下限以上及び上記上限以下であると、フラックス効果がより一層効果的に発揮され、はんだが電極上により一層効率的に配置される。上記フラックスの活性温度（融点）は８０℃以上、１９０℃以下であることが好ましい。上記フラックスの活性温度（融点）は８０℃以上、１４０℃以下であることが特に好ましい。 The active temperature (melting point) of the flux is preferably 50 ° C. or higher, more preferably 70 ° C. or higher, still more preferably 80 ° C. or higher, preferably 200 ° C. or lower, more preferably 190 ° C. or lower, even more preferably 160. ° C or lower, more preferably 150 ° C or lower, still more preferably 140 ° C or lower. When the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the flux effect is more effectively exhibited and the solder is more efficiently arranged on the electrode. The active temperature (melting point) of the flux is preferably 80 ° C. or higher and 190 ° C. or lower. The activation temperature (melting point) of the flux is particularly preferably 80 ° C. or higher and 140 ° C. or lower.
　フラックスの活性温度（融点）が８０℃以上、１９０℃以下である上記フラックスとしては、コハク酸（融点１８６℃）、グルタル酸（融点９６℃）、アジピン酸（融点１５２℃）、ピメリン酸（融点１０４℃）、スベリン酸（融点１４２℃）等のジカルボン酸、安息香酸（融点１２２℃）、リンゴ酸（融点１３０℃）等が挙げられる。 The flux having an active temperature (melting point) of 80 ° C. or higher and 190 ° C. or lower includes succinic acid (melting point 186 ° C.), glutaric acid (melting point 96 ° C.), adipic acid (melting point 152 ° C.), pimelic acid (melting point) 104 ° C.), dicarboxylic acids such as suberic acid (melting point 142 ° C.), benzoic acid (melting point 122 ° C.), malic acid (melting point 130 ° C.) and the like.
　また、上記フラックスの沸点は２００℃以下であることが好ましい。 The boiling point of the flux is preferably 200 ° C. or lower.
　はんだを電極上により一層効率的に配置する観点からは、上記フラックスの融点は、上記導電性粒子におけるはんだの融点よりも、高いことが好ましく、５℃以上高いことがより好ましく、１０℃以上高いことが更に好ましい。 From the viewpoint of more efficiently arranging the solder on the electrode, the melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, more preferably 5 ° C or higher, and more preferably 10 ° C or higher. More preferably.
　はんだを電極上により一層効率的に配置する観点からは、上記フラックスの融点は、上記熱硬化剤の反応開始温度よりも、高いことが好ましく、５℃以上高いことがより好ましく、１０℃以上高いことが更に好ましい。 From the viewpoint of more efficiently arranging the solder on the electrode, the melting point of the flux is preferably higher than the reaction start temperature of the thermosetting agent, more preferably 5 ° C or higher, more preferably 10 ° C or higher. More preferably.
　上記フラックスは、導電材料中に分散されていてもよく、導電性粒子の表面上に付着していてもよい。 The flux may be dispersed in the conductive material or may be adhered on the surface of the conductive particles.
　フラックスの融点が、はんだの融点より高いことにより、電極部分にはんだを効率的に凝集させることができる。これは、接合時に熱を付与した場合、接続対象部材上に形成された電極と、電極周辺の接続対象部材の部分とを比較すると、電極部分の熱伝導率が電極周辺の接続対象部材部分の熱伝導率よりも高いことにより、電極部分の昇温が速いことに起因する。導電性粒子におけるはんだの融点を超えた段階では、導電性粒子におけるはんだは溶解するが、表面に形成された酸化被膜は、フラックスの融点（活性温度）に達していないので、除去されない。この状態で、電極部分の温度が先に、フラックスの融点（活性温度）に達するため、優先的に電極上に来た導電性粒子におけるはんだの表面の酸化被膜が除去されることや、活性化したフラックスにより導電性粒子におけるはんだの表面の電荷が中和されることにより、はんだが電極の表面上に濡れ拡がることができる。これにより、電極上に効率的にはんだを凝集させることができる。 Since the melting point of the flux is higher than the melting point of the solder, the solder can be efficiently aggregated on the electrode portion. This is because, when heat is applied at the time of joining, when the electrode formed on the connection target member is compared with the portion of the connection target member around the electrode, the thermal conductivity of the electrode portion is that of the connection target member portion around the electrode. Due to the fact that it is higher than the thermal conductivity, the temperature rise of the electrode portion is fast. At the stage where the melting point of the solder in the conductive particles is exceeded, the solder in the conductive particles dissolves, but the oxide film formed on the surface does not reach the melting point (activation temperature) of the flux and is not removed. In this state, since the temperature of the electrode part first reaches the melting point (activation temperature) of the flux, the oxide film on the surface of the solder on the conductive particles preferentially coming on the electrode is removed or activated. Since the electric charge on the surface of the solder in the conductive particles is neutralized by the flux, the solder can spread on the surface of the electrode. Thereby, a solder can be efficiently aggregated on an electrode.
　上記導電材料１００重量％中、上記フラックスの含有量は好ましくは０．５重量％以上であり、好ましくは３０重量％以下、より好ましくは２５重量％以下である。上記導電材料は、フラックスを含んでいなくてもよい。フラックスの含有量が上記下限以上及び上記上限以下であると、はんだ及び電極の表面に酸化被膜がより一層形成され難くなり、さらに、はんだ及び電極の表面に形成された酸化被膜をより一層効果的に除去できる。 In 100% by weight of the conductive material, the content of the flux is preferably 0.5% by weight or more, preferably 30% by weight or less, more preferably 25% by weight or less. The conductive material may not contain flux. When the flux content is not less than the above lower limit and not more than the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode is more effective. Can be removed.
　（絶縁性粒子）
　導電材料の硬化物により接続される接続対象部材間の間隔、並びに導電性粒子におけるはんだにより接続される接続対象部材間の間隔を高精度に制御する観点からは、上記導電材料は、絶縁性粒子を含むことが好ましい。上記導電材料において、上記絶縁性粒子は、導電性粒子の表面に付着していなくてもよい。上記導電材料中で、上記絶縁性粒子は上記導電性粒子と離れて存在することが好ましい。 (Insulating particles)
From the viewpoint of controlling the interval between the connection target members connected by the cured material of the conductive material and the interval between the connection target members connected by the solder in the conductive particles with high accuracy, the conductive material is made of insulating particles. It is preferable to contain. In the conductive material, the insulating particles may not be attached to the surface of the conductive particles. In the conductive material, the insulating particles are preferably present apart from the conductive particles.
　上記絶縁性粒子の平均粒子径は、好ましくは１０μｍ以上、より好ましくは２０μｍ以上、更に好ましくは２５μｍ以上であり、好ましくは１００μｍ以下、より好ましくは７５μｍ以下、更に好ましくは５０μｍ以下である。上記基材粒子の平均粒子径が上記下限以上及び上記上限以下であると、導電材料の硬化物により接続される接続対象部材間の間隔、並びに導電性粒子におけるはんだにより接続される接続対象部材間の間隔がより一層適度になる。 The average particle diameter of the insulating particles is preferably 10 μm or more, more preferably 20 μm or more, further preferably 25 μm or more, preferably 100 μm or less, more preferably 75 μm or less, and even more preferably 50 μm or less. When the average particle diameter of the substrate particles is not less than the above lower limit and not more than the above upper limit, the interval between the connection target members connected by the cured material of the conductive material, and the connection target members connected by the solder in the conductive particles The interval becomes even more moderate.
　上記絶縁性粒子の材料としては、絶縁性の樹脂、及び絶縁性の無機物等が挙げられる。上記絶縁性の樹脂としては、基材粒子として用いることが可能な樹脂粒子を形成するための樹脂として挙げた上記樹脂が挙げられる。上記絶縁性の無機物としては、基材粒子として用いることが可能な無機粒子を形成するための無機物として挙げた上記無機物が挙げられる。 The material for the insulating particles includes an insulating resin and an insulating inorganic substance. As said insulating resin, the said resin quoted as resin for forming the resin particle which can be used as a base particle is mentioned. As said insulating inorganic substance, the said inorganic substance quoted as an inorganic substance for forming the inorganic particle which can be used as a base particle is mentioned.
　上記絶縁性粒子の材料である絶縁性樹脂の具体例としては、ポリオレフィン類、（メタ）アクリレート重合体、（メタ）アクリレート共重合体、ブロックポリマー、熱可塑性樹脂、熱可塑性樹脂の架橋物、熱硬化性樹脂及び水溶性樹脂等が挙げられる。 Specific examples of the insulating resin that is the material of the insulating particles include polyolefins, (meth) acrylate polymers, (meth) acrylate copolymers, block polymers, thermoplastic resins, crosslinked thermoplastic resins, heat Examples thereof include curable resins and water-soluble resins.
　上記ポリオレフィン類としては、ポリエチレン、エチレン－酢酸ビニル共重合体及びエチレン－アクリル酸エステル共重合体等が挙げられる。上記（メタ）アクリレート重合体としては、ポリメチル（メタ）アクリレート、ポリエチル（メタ）アクリレート及びポリブチル（メタ）アクリレート等が挙げられる。上記ブロックポリマーとしては、ポリスチレン、スチレン－アクリル酸エステル共重合体、ＳＢ型スチレン－ブタジエンブロック共重合体、及びＳＢＳ型スチレン－ブタジエンブロック共重合体、並びにこれらの水素添加物等が挙げられる。上記熱可塑性樹脂としては、ビニル重合体及びビニル共重合体等が挙げられる。上記熱硬化性樹脂としては、エポキシ樹脂、フェノール樹脂及びメラミン樹脂等が挙げられる。上記水溶性樹脂としては、ポリビニルアルコール、ポリアクリル酸、ポリアクリルアミド、ポリビニルピロリドン、ポリエチレンオキシド及びメチルセルロース等が挙げられる。水溶性樹脂が好ましく、ポリビニルアルコールがより好ましい。 Examples of the polyolefins include polyethylene, ethylene-vinyl acetate copolymer, and ethylene-acrylic ester copolymer. Examples of the (meth) acrylate polymer include polymethyl (meth) acrylate, polyethyl (meth) acrylate, and polybutyl (meth) acrylate. Examples of the block polymer include polystyrene, styrene-acrylate copolymer, SB type styrene-butadiene block copolymer, SBS type styrene-butadiene block copolymer, and hydrogenated products thereof. Examples of the thermoplastic resin include vinyl polymers and vinyl copolymers. As said thermosetting resin, an epoxy resin, a phenol resin, a melamine resin, etc. are mentioned. Examples of the water-soluble resin include polyvinyl alcohol, polyacrylic acid, polyacrylamide, polyvinyl pyrrolidone, polyethylene oxide, and methyl cellulose. A water-soluble resin is preferable, and polyvinyl alcohol is more preferable.
　上記絶縁性粒子の材料である絶縁性無機物の具体例としては、シリカ及び有機無機ハイブリッド粒子等が挙げられる。上記シリカにより形成された粒子としては特に限定されないが、例えば、加水分解性のアルコキシシリル基を２つ以上有するケイ素化合物を加水分解して架橋重合体粒子を形成した後に、必要に応じて焼成を行うことにより得られる粒子が挙げられる。上記有機無機ハイブリッド粒子としては、例えば、架橋したアルコキシシリルポリマーとアクリル樹脂とにより形成された有機無機ハイブリッド粒子等が挙げられる。 Specific examples of the insulating inorganic material that is the material of the insulating particles include silica and organic-inorganic hybrid particles. The particles formed from the silica are not particularly limited. For example, after forming a crosslinked polymer particle by hydrolyzing a silicon compound having two or more hydrolyzable alkoxysilyl groups, firing may be performed as necessary. The particle | grains obtained by performing are mentioned. Examples of the organic / inorganic hybrid particles include organic / inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and an acrylic resin.
　上記導電材料１００重量％中、上記絶縁性粒子の含有量は好ましくは０．１重量％以上、より好ましくは０．５重量％以上であり、好ましくは１０重量％以下、より好ましくは５重量％以下である。上記導電材料は、絶縁性粒子を含んでいなくてもよい。絶縁性粒子の含有量が上記下限以上及び上記上限以下であると、導電材料の硬化物により接続される接続対象部材間の間隔、並びに導電性粒子におけるはんだにより接続される接続対象部材間の間隔がより一層適度になる。 In 100% by weight of the conductive material, the content of the insulating particles is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, preferably 10% by weight or less, more preferably 5% by weight. It is as follows. The conductive material may not contain insulating particles. When the content of the insulating particles is not less than the above lower limit and not more than the above upper limit, the interval between the connection target members connected by the cured material of the conductive material, and the interval between the connection target members connected by the solder in the conductive particles Becomes even more reasonable.
　（カルボジイミド化合物）
　硬化物の透明性及び耐熱性を効果的に高める観点からは、上記導電材料はカルボジイミド化合物を含むことが好ましい。 (Carbodiimide compound)
From the viewpoint of effectively increasing the transparency and heat resistance of the cured product, the conductive material preferably contains a carbodiimide compound.
　上記カルボジイミド化合物としては、１，３－ジイソプロピルカルボジイミド、ビス（２，６－ジイソプロピルフェニル）カルボジイミド、１－エチル－３－（３―ジメチルアミノプロピル）カルボジイミド塩酸塩、１－（３－（ジメチルアミノ）プロピル）－３－エチルカルボジイミド、Ｎ，Ｎ’－ジシクロヘキシルカルボジイミド、Ｎ，Ｎ’－ジイソプロピルカルボジイミド、Ｎ－シクロヘキシル－Ｎ’－（２－モルホリノエチル）カルボジイミドメト－ｐ－トルエンスルホン酸塩、末端イソシアネート基変性のポリカルボジイミド化合物、環状カルボジイミド化合物、カルボジイミド化触媒の存在下でジイソシアネートを重合させて得られるポリカルボジイミド化合物等が挙げられる。分子量が大きくアウトガスが発生しにくいことから、ポリカルボジイミド化合物が好ましい。 Examples of the carbodiimide compound include 1,3-diisopropylcarbodiimide, bis (2,6-diisopropylphenyl) carbodiimide, 1-ethyl-3- (3-dimethylaminopropyl) carbodiimide hydrochloride, 1- (3- (dimethylamino) Propyl) -3-ethylcarbodiimide, N, N'-dicyclohexylcarbodiimide, N, N'-diisopropylcarbodiimide, N-cyclohexyl-N '-(2-morpholinoethyl) carbodiimide meth-p-toluenesulfonate, terminal isocyanate group Examples thereof include a modified polycarbodiimide compound, a cyclic carbodiimide compound, and a polycarbodiimide compound obtained by polymerizing diisocyanate in the presence of a carbodiimidization catalyst. A polycarbodiimide compound is preferred because it has a high molecular weight and hardly generates outgas.
　上記ポリカルボジイミド化合物の市販品としては、例えば、カルボジライトＶ０２Ｂ、カルボジライトＶ０４Ｋ、カルボジライトＶ０５（いずれも日清紡社製）等が挙げられる。 Examples of commercially available polycarbodiimide compounds include Carbodilite V02B, Carbodilite V04K, Carbodilite V05 (all manufactured by Nisshinbo Co., Ltd.) and the like.
　硬化物の透明性及び耐熱性を効果的に高める観点からは、上記導電材料１００重量％中、上記カルボジイミド化合物の含有量は、好ましくは０．０１重量％以上、より好ましくは０．１重量％以上であり、好ましくは５重量％以下、より好ましくは３重量％以下である。 From the viewpoint of effectively increasing the transparency and heat resistance of the cured product, the content of the carbodiimide compound in the conductive material 100% by weight is preferably 0.01% by weight or more, more preferably 0.1% by weight. It is above, Preferably it is 5 weight% or less, More preferably, it is 3 weight% or less.
　（他の成分）
　上記導電材料は、必要に応じて、例えば、カップリング剤、遮光剤、反応性希釈剤、消泡剤、レベリング剤、充填剤、増量剤、軟化剤、可塑剤、重合触媒、硬化触媒、着色剤、酸化防止剤、熱安定剤、光安定剤、紫外線吸収剤、滑剤、帯電防止剤及び難燃剤等の各種添加剤を含んでいてもよい。 (Other ingredients)
The conductive material may be, for example, a coupling agent, a light-shielding agent, a reactive diluent, an antifoaming agent, a leveling agent, a filler, an extender, a softening agent, a plasticizer, a polymerization catalyst, a curing catalyst, or a coloring agent. Various additives such as an agent, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, a lubricant, an antistatic agent and a flame retardant may be included.
　（接続構造体及び接続構造体の製造方法）
　本発明に係る接続構造体は、少なくとも１つの第１の電極を表面に有する第１の接続対象部材と、少なくとも１つの第２の電極を表面に有する第２の接続対象部材と、上記第１の接続対象部材と、上記第２の接続対象部材とを接続している接続部とを備える。本発明に係る接続構造体では、上記接続部の材料が、上述した導電材料である。上記接続部が、上述した導電材料の硬化物である。上記接続部が、上述した導電材料により形成されている。本発明に係る接続構造体では、上記第１の電極と上記第２の電極とが、上記接続部中のはんだ部により電気的に接続されている。 (Connection structure and method of manufacturing connection structure)
A connection structure according to the present invention includes a first connection target member having at least one first electrode on the surface, a second connection target member having at least one second electrode on the surface, and the first The connection object member and the connection part which has connected the said 2nd connection object member are provided. In the connection structure according to the present invention, the material of the connection portion is the conductive material described above. The connecting portion is a cured product of the conductive material described above. The connecting portion is formed of the conductive material described above. In the connection structure according to the present invention, the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
　上記接続構造体の製造方法は、上述した導電材料を用いて、少なくとも１つの第１の電極を表面に有する第１の接続対象部材の表面上に、上記導電材料を配置する工程と、上記導電材料の上記第１の接続対象部材側とは反対の表面上に、少なくとも１つの第２の電極を表面に有する第２の接続対象部材を、上記第１の電極と上記第２の電極とが対向するように配置する工程と、上記導電性粒子におけるはんだの融点以上に上記導電材料を加熱することで、上記第１の接続対象部材と上記第２の接続対象部材とを接続している接続部を、上記導電材料により形成し、かつ、上記第１の電極と上記第２の電極とを、上記接続部中のはんだ部により電気的に接続する工程とを備える。好ましくは、上記熱硬化性成分、熱硬化性化合物の硬化温度以上に上記導電材料を加熱する。 The method for manufacturing the connection structure includes the step of disposing the conductive material on the surface of the first connection target member having at least one first electrode on the surface, using the conductive material described above, A second connection target member having at least one second electrode on the surface opposite to the first connection target member side of the material, the first electrode and the second electrode A step of arranging the first connection target member and the second connection target member by connecting the first connection target member and the second connection target member by heating the conductive material to a temperature equal to or higher than the melting point of the solder in the conductive particles. Forming a portion with the conductive material, and electrically connecting the first electrode and the second electrode with a solder portion in the connection portion. Preferably, the conductive material is heated above the curing temperature of the thermosetting component and the thermosetting compound.
　本発明に係る接続構造体及び上記接続構造体の製造方法では、特定の導電材料を用いているので、複数の導電性粒子におけるはんだが第１の電極と第２の電極との間に集まりやすく、はんだを電極（ライン）上に効率的に配置することができる。また、はんだの一部が、電極が形成されていない領域（スペース）に配置され難く、電極が形成されていない領域に配置されるはんだの量をかなり少なくすることができる。従って、第１の電極と第２の電極との間の導通信頼性を高めることができる。しかも、接続されてはならない横方向に隣接する電極間の電気的な接続を防ぐことができ、絶縁信頼性を高めることができる。 In the connection structure according to the present invention and the method for manufacturing the connection structure, since a specific conductive material is used, solder in a plurality of conductive particles easily collects between the first electrode and the second electrode. The solder can be efficiently arranged on the electrode (line). In addition, a part of the solder is difficult to be disposed in a region (space) where no electrode is formed, and the amount of solder disposed in a region where no electrode is formed can be considerably reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. In addition, it is possible to prevent electrical connection between laterally adjacent electrodes that should not be connected, and to improve insulation reliability.
　また、複数の導電性粒子におけるはんだを電極上に効率的に配置し、かつ電極が形成されていない領域に配置されるはんだの量をかなり少なくするためには、上記導電材料として、導電フィルムではなく、導電ペーストを用いることが好ましい。 Moreover, in order to arrange the solder in a plurality of conductive particles efficiently on the electrode and to considerably reduce the amount of the solder arranged in the region where the electrode is not formed, as the conductive material, a conductive film is used. It is preferable to use a conductive paste.
　電極間でのはんだ部の厚みは、好ましくは１０μｍ以上、より好ましくは２０μｍ以上であり、好ましくは１００μｍ以下、より好ましくは８０μｍ以下である。電極の表面上のはんだ濡れ面積（電極の露出した面積１００％中のはんだが接している面積）は、好ましくは５０％以上、より好ましくは７０％以上であり、好ましくは１００％以下である。 The thickness of the solder part between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, preferably 100 μm or less, more preferably 80 μm or less. The solder wetted area on the surface of the electrode (area where the solder is in contact with 100% of the exposed area of the electrode) is preferably 50% or more, more preferably 70% or more, and preferably 100% or less.
　本発明に係る接続構造体の製造方法では、上記第２の接続対象部材を配置する工程及び上記接続部を形成する工程において、加圧を行わず、上記導電材料には、上記第２の接続対象部材の重量が加わることが好ましく、上記第２の接続対象部材を配置する工程及び上記接続部を形成する工程において、上記導電材料には、上記第２の接続対象部材の重量の力を超える加圧圧力は加わらないことが好ましい。これらの場合には、複数のはんだ部において、はんだ量の均一性をより一層高めることができる。さらに、はんだ部の厚みをより一層効果的に厚くすることができ、複数の導電性粒子におけるはんだが電極間に多く集まりやすくなり、複数の導電性粒子におけるはんだを電極（ライン）上により一層効率的に配置することができる。また、複数の導電性粒子におけるはんだの一部が、電極が形成されていない領域（スペース）に配置され難く、電極が形成されていない領域に配置される導電性粒子におけるはんだの量をより一層少なくすることができる。従って、電極間の導通信頼性をより一層高めることができる。しかも、接続されてはならない横方向に隣接する電極間の電気的な接続をより一層防ぐことができ、絶縁信頼性をより一層高めることができる。 In the method for manufacturing a connection structure according to the present invention, in the step of arranging the second connection target member and the step of forming the connection portion, no pressure is applied, and the second connection is applied to the conductive material. The weight of the target member is preferably added, and in the step of arranging the second connection target member and the step of forming the connection portion, the conductive material exceeds the weight force of the second connection target member. It is preferable that no pressure is applied. In these cases, the uniformity of the amount of solder can be further enhanced in the plurality of solder portions. Furthermore, the thickness of the solder portion can be made even more effective, and a large amount of solder in a plurality of conductive particles tends to gather between the electrodes, and the solder in the plurality of conductive particles is more efficiently distributed on the electrode (line). Can be arranged. In addition, it is difficult for a part of the solder in the plurality of conductive particles to be disposed in the region (space) where the electrode is not formed, and the amount of solder in the conductive particle disposed in the region where the electrode is not formed is further increased. Can be reduced. Therefore, the conduction reliability between the electrodes can be further enhanced. In addition, the electrical connection between the laterally adjacent electrodes that should not be connected can be further prevented, and the insulation reliability can be further improved.
　さらに、上記第２の接続対象部材を配置する工程及び上記接続部を形成する工程において、加圧を行わず、上記導電材料に、上記第２の接続対象部材の重量が加われば、接続部が形成される前に電極が形成されていない領域（スペース）に配置されていたはんだが第１の電極と第２の電極との間により一層集まりやすくなり、複数の導電性粒子におけるはんだを電極（ライン）上により一層効率的に配置することができることも、見出した。本発明では、導電フィルムではなく、導電ペーストを用いるという構成と、加圧を行わず、上記導電ペーストには、上記第２の接続対象部材の重量が加わるようにするという構成とを組み合わせて採用することには、本発明の効果をより一層高いレベルで得るために大きな意味がある。 Furthermore, in the step of arranging the second connection target member and the step of forming the connection portion, if the weight of the second connection target member is added to the conductive material without applying pressure, the connection portion is Solder arranged in a region (space) where no electrode is formed before it is formed is more likely to gather between the first electrode and the second electrode, and solder in a plurality of conductive particles can be It has also been found that it can be arranged more efficiently on the line). In the present invention, a configuration in which a conductive paste is used instead of a conductive film and a configuration in which the weight of the second connection target member is added to the conductive paste without applying pressure are used in combination. This has a great meaning in order to obtain the effects of the present invention at a higher level.
　なお、ＷＯ２００８／０２３４５２Ａ１では、はんだ粉を電極表面に押し流して効率よく移動させる観点からは、接着時に所定の圧力で加圧するとよいことが記載されており、加圧圧力は、はんだ領域をさらに確実に形成する観点では、例えば、０ＭＰａ以上、好ましくは１ＭＰａ以上とすることが記載されており、更に、接着テープに意図的に加える圧力が０ＭＰａであっても、接着テープ上に配置された部材の自重により、接着テープに所定の圧力が加わってもよいことが記載されている。ＷＯ２００８／０２３４５２Ａ１では、接着テープに意図的に加える圧力が０ＭＰａであってもよいことは記載されているが、０ＭＰａを超える圧力を付与した場合と０ＭＰａとした場合との効果の差異については、何ら記載されていない。また、ＷＯ２００８／０２３４５２Ａ１では、フィルム状ではなく、ペースト状の導電ペーストを用いることの重要性についても何ら認識されていない。 In addition, WO2008 / 023452A1 describes that it is preferable to pressurize with a predetermined pressure at the time of bonding from the viewpoint of efficiently moving the solder powder to the electrode surface, and the pressurizing pressure further ensures the solder area. For example, it is described that the pressure is set to 0 MPa or more, preferably 1 MPa or more. Further, even if the pressure intentionally applied to the adhesive tape is 0 MPa, the member disposed on the adhesive tape It is described that a predetermined pressure may be applied to the adhesive tape by its own weight. In WO2008 / 023452A1, it is described that the pressure applied intentionally to the adhesive tape may be 0 MPa, but there is no difference between the effect when the pressure exceeding 0 MPa is applied and when the pressure is set to 0 MPa. Not listed. In addition, WO2008 / 023452A1 recognizes nothing about the importance of using a paste-like conductive paste instead of a film.
　また、導電フィルムではなく、導電ペーストを用いれば、導電ペーストの塗布量によって、接続部及びはんだ部の厚みを調整することが容易になる。一方で、導電フィルムでは、接続部の厚みを変更したり、調整したりするためには、異なる厚みの導電フィルムを用意したり、所定の厚みの導電フィルムを用意したりしなければならないという問題がある。また、導電フィルムでは、導電ペーストと比べて、はんだの溶融温度で、導電フィルムの溶融粘度を十分に下げることができず、はんだの凝集が阻害されやすい傾向がある。 Also, if a conductive paste is used instead of a conductive film, it becomes easy to adjust the thicknesses of the connection part and the solder part depending on the amount of the conductive paste applied. On the other hand, in the conductive film, in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film having a different thickness or to prepare a conductive film having a predetermined thickness. There is. Moreover, in the conductive film, compared with the conductive paste, the melt viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder, and the aggregation of the solder tends to be hindered.
　以下、図面を参照しつつ、本発明の具体的な実施形態を説明する。 Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
　図１は、本発明の一実施形態に係る導電材料を用いて得られる接続構造体を模式的に示す断面図である。 FIG. 1 is a cross-sectional view schematically showing a connection structure obtained using a conductive material according to an embodiment of the present invention.
　図１に示す接続構造体１は、第１の接続対象部材２と、第２の接続対象部材３と、第１の接続対象部材２と第２の接続対象部材３とを接続している接続部４とを備える。接続部４は、上述した導電材料により形成されている。本実施形態では、上記導電材料は、導電性粒子と、バインダーとを含む。本実施形態では、導電材料は、導電性粒子として、はんだ粒子を含む。本実施形態では、バインダーは、熱硬化性化合物と、熱硬化剤とを含む。上記熱硬化性化合物と上記熱硬化剤とを、熱硬化性成分と呼ぶ。 The connection structure 1 shown in FIG. 1 is a connection that connects a first connection target member 2, a second connection target member 3, and the first connection target member 2 and the second connection target member 3. Part 4. The connection part 4 is formed of the conductive material described above. In the present embodiment, the conductive material includes conductive particles and a binder. In the present embodiment, the conductive material includes solder particles as conductive particles. In the present embodiment, the binder includes a thermosetting compound and a thermosetting agent. The thermosetting compound and the thermosetting agent are referred to as thermosetting components.
　接続部４は、複数のはんだ粒子が集まり互いに接合したはんだ部４Ａと、熱硬化性成分が熱硬化された硬化物部４Ｂとを有する。 The connecting portion 4 includes a solder portion 4A in which a plurality of solder particles are gathered and joined to each other, and a cured product portion 4B in which a thermosetting component is thermally cured.
　第１の接続対象部材２は表面（上面）に、複数の第１の電極２ａを有する。第２の接続対象部材３は表面（下面）に、複数の第２の電極３ａを有する。第１の電極２ａと第２の電極３ａとが、はんだ部４Ａにより電気的に接続されている。従って、第１の接続対象部材２と第２の接続対象部材３とが、はんだ部４Ａにより電気的に接続されている。なお、接続部４において、第１の電極２ａと第２の電極３ａとの間に集まったはんだ部４Ａとは異なる領域（硬化物部４Ｂ部分）では、はんだは存在しない。はんだ部４Ａとは異なる領域（硬化物部４Ｂ部分）では、はんだ部４Ａと離れたはんだは存在しない。なお、少量であれば、第１の電極２ａと第２の電極３ａとの間に集まったはんだ部４Ａとは異なる領域（硬化物部４Ｂ部分）に、はんだが存在していてもよい。 The first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A. In the connection portion 4, no solder exists in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a. In an area different from the solder part 4A (hardened product part 4B part), there is no solder separated from the solder part 4A. If the amount is small, the solder may be present in a region (cured product portion 4B portion) different from the solder portion 4A gathered between the first electrode 2a and the second electrode 3a.
　図１に示すように、接続構造体１では、第１の電極２ａと第２の電極３ａとの間に、複数のはんだ粒子が集まり、複数のはんだ粒子が溶融した後、はんだ粒子の溶融物が電極の表面を濡れ拡がった後に固化して、はんだ部４Ａが形成されている。このため、はんだ部４Ａと第１の電極２ａ、並びにはんだ部４Ａと第２の電極３ａとの接続面積が大きくなる。すなわち、はんだ粒子を用いることにより、導電部の外表面部分がニッケル、金又は銅等の金属である導電性粒子を用いた場合と比較して、はんだ部４Ａと第１の電極２ａ、並びにはんだ部４Ａと第２の電極３ａとの接触面積が大きくなる。このため、接続構造体１における導通信頼性及び接続信頼性が高くなる。 As shown in FIG. 1, in the connection structure 1, a plurality of solder particles gather between the first electrode 2 a and the second electrode 3 a, and after the plurality of solder particles melt, After the electrode surface wets and spreads, it solidifies to form the solder portion 4A. For this reason, the connection area of 4 A of solder parts and the 1st electrode 2a, and 4 A of solder parts, and the 2nd electrode 3a becomes large. That is, by using solder particles, the solder portion 4A, the first electrode 2a, and the solder as compared with the case where the outer surface portion of the conductive portion is made of conductive particles such as nickel, gold or copper are used. The contact area between the portion 4A and the second electrode 3a increases. For this reason, the conduction | electrical_connection reliability and connection reliability in the connection structure 1 become high.
　なお、図１に示す接続構造体１では、はんだ部４Ａの全てが、第１，第２の電極２ａ，３ａ間の対向している領域に位置している。図３に示す変形例の接続構造体１Ｘは、接続部４Ｘのみが、図１に示す接続構造体１と異なる。接続部４Ｘは、はんだ部４ＸＡと硬化物部４ＸＢとを有する。接続構造体１Ｘのように、はんだ部４ＸＡの多くが、第１，第２の電極２ａ，３ａの対向している領域に位置しており、はんだ部４ＸＡの一部が第１，第２の電極２ａ，３ａの対向している領域から側方にはみ出していてもよい。第１，第２の電極２ａ，３ａの対向している領域から側方にはみ出しているはんだ部４ＸＡは、はんだ部４ＸＡの一部であり、はんだ部４ＸＡから離れたはんだではない。なお、本実施形態では、はんだ部から離れたはんだの量を少なくすることができるが、はんだ部から離れたはんだが硬化物部中に存在していてもよい。 In addition, in the connection structure 1 shown in FIG. 1, all of the solder portions 4A are located in the facing region between the first and second electrodes 2a and 3a. The connection structure 1X of the modification shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X. The connection part 4X has the solder part 4XA and the hardened | cured material part 4XB. As in the connection structure 1X, most of the solder portions 4XA are located in regions where the first and second electrodes 2a and 3a are opposed to each other, and a part of the solder portion 4XA is first and second. You may protrude to the side from the area | region which electrode 2a, 3a has opposed. The solder part 4XA protruding laterally from the region where the first and second electrodes 2a and 3a are opposed is a part of the solder part 4XA and is not a solder separated from the solder part 4XA. In the present embodiment, the amount of solder away from the solder portion can be reduced, but the solder away from the solder portion may exist in the cured product portion.
　はんだ粒子の使用量を少なくすれば、接続構造体１を得ることが容易になる。はんだ粒子の使用量を多くすれば、接続構造体１Ｘを得ることが容易になる。 If the amount of solder particles used is reduced, the connection structure 1 can be easily obtained. If the amount of the solder particles used is increased, it becomes easy to obtain the connection structure 1X.
　導通信頼性をより一層高める観点からは、接続構造体１，１Ｘでは、第１の電極２ａと接続部４，４Ｘと第２の電極３ａとの積層方向に第１の電極２ａと第２の電極３ａとの対向し合う部分をみたときに、第１の電極２ａと第２の電極３ａとの対向し合う部分の面積１００％中の５０％以上に、接続部４，４Ｘ中のはんだ部４Ａ，４ＸＡが配置されていることが好ましい。 From the viewpoint of further improving the conduction reliability, in the connection structures 1 and 1X, the first electrode 2a and the second electrode 2a are arranged in the stacking direction of the first electrode 2a, the connection portions 4 and 4X, and the second electrode 3a. When the portion facing the electrode 3a is viewed, the solder portion in the connection portions 4 and 4X is at least 50% of the area of 100% of the portion facing the first electrode 2a and the second electrode 3a. 4A and 4XA are preferably arranged.
　導通信頼性をより一層高める観点からは、上記第１の電極と上記接続部と上記第２の電極との積層方向に上記第１の電極と上記第２の電極との対向し合う部分をみたときに、上記第１の電極と上記第２の電極との対向し合う部分の面積１００％中の５０％以上（より好ましくは６０％以上、更に好ましくは７０％以上、特に好ましくは８０％以上、最も好ましくは９０％以上）に、上記接続部中のはんだ部が配置されていることが好ましい。 From the viewpoint of further improving the conduction reliability, the portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is seen. Sometimes, 50% or more (more preferably 60% or more, still more preferably 70% or more, particularly preferably 80% or more) out of 100% of the area where the first electrode and the second electrode face each other. , Most preferably 90% or more), the solder portion in the connection portion is preferably disposed.
　導通信頼性をより一層高める観点からは、上記第１の電極と上記接続部と上記第２の電極との積層方向と直交する方向に上記第１の電極と上記第２の電極との対向し合う部分をみたときに、上記第１の電極と上記第２の電極との対向し合う部分に、上記接続部中のはんだ部の６０％以上（より好ましくは７０％以上、更に好ましくは９０％以上、特に好ましくは９５％以上、最も好ましくは９９％以上）が配置されていることが好ましい。 From the viewpoint of further improving the conduction reliability, the first electrode and the second electrode are opposed to each other in a direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode. When the matching portion is viewed, the portion where the first electrode and the second electrode face each other is 60% or more (more preferably 70% or more, more preferably 90%) of the solder portion in the connection portion. In particular, it is preferable that 95% or more, most preferably 99% or more) is disposed.
　次に、本発明の一実施形態に係る導電材料を用いて、接続構造体１を製造する方法の一例を説明する。 Next, an example of a method for manufacturing the connection structure 1 using the conductive material according to the embodiment of the present invention will be described.
　先ず、第１の電極２ａを表面（上面）に有する第１の接続対象部材２を用意する。次に、図２（ａ）に示すように、第１の接続対象部材２の表面上に、熱硬化性成分１１Ｂと、複数のはんだ粒子１１Ａとを含む導電材料１１を配置する（第１の工程）。用いた導電材料は、熱硬化性成分１１Ｂとして、熱硬化性化合物と熱硬化剤とを含む。 First, the first connection target member 2 having the first electrode 2a on the surface (upper surface) is prepared. Next, as shown in FIG. 2A, a conductive material 11 including a thermosetting component 11B and a plurality of solder particles 11A is disposed on the surface of the first connection target member 2 (first Process). The used conductive material contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B.
　第１の接続対象部材２の第１の電極２ａが設けられた表面上に、導電材料１１を配置する。導電材料１１の配置の後に、はんだ粒子１１Ａは、第１の電極２ａ（ライン）上と、第１の電極２ａが形成されていない領域（スペース）上との双方に配置されている。 The conductive material 11 is disposed on the surface of the first connection target member 2 on which the first electrode 2a is provided. After the conductive material 11 is disposed, the solder particles 11A are disposed both on the first electrode 2a (line) and on a region (space) where the first electrode 2a is not formed.
　導電材料１１の配置方法としては、特に限定されないが、ディスペンサーによる塗布、スクリーン印刷、及びインクジェット装置による吐出等が挙げられる。 The arrangement method of the conductive material 11 is not particularly limited, and examples thereof include application by a dispenser, screen printing, and discharge by an inkjet device.
　また、第２の電極３ａを表面（下面）に有する第２の接続対象部材３を用意する。次に、図２（ｂ）に示すように、第１の接続対象部材２の表面上の導電材料１１において、導電材料１１の第１の接続対象部材２側とは反対側の表面上に、第２の接続対象部材３を配置する（第２の工程）。導電材料１１の表面上に、第２の電極３ａ側から、第２の接続対象部材３を配置する。このとき、第１の電極２ａと第２の電極３ａとを対向させる。 Moreover, the 2nd connection object member 3 which has the 2nd electrode 3a on the surface (lower surface) is prepared. Next, as shown in FIG. 2B, in the conductive material 11 on the surface of the first connection target member 2, on the surface opposite to the first connection target member 2 side of the conductive material 11, The 2nd connection object member 3 is arrange | positioned (2nd process). On the surface of the conductive material 11, the second connection target member 3 is disposed from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
　次に、はんだ粒子１１Ａの融点以上に導電材料１１を加熱する（第３の工程）。好ましくは、熱硬化性成分１１Ｂ（熱硬化性化合物）の硬化温度以上に導電材料１１を加熱する。この加熱時には、電極が形成されていない領域に存在していたはんだ粒子１１Ａは、第１の電極２ａと第２の電極３ａとの間に集まる（自己凝集効果）。導電フィルムではなく、導電ペーストを用いた場合には、はんだ粒子１１Ａが、第１の電極２ａと第２の電極３ａとの間に効果的に集まる。また、はんだ粒子１１Ａは溶融し、互いに接合する。また、熱硬化性成分１１Ｂは熱硬化する。この結果、図２（ｃ）に示すように、第１の接続対象部材２と第２の接続対象部材３とを接続している接続部４を、導電材料１１により形成する。導電材料１１により接続部４が形成され、複数のはんだ粒子１１Ａが接合することによってはんだ部４Ａが形成され、熱硬化性成分１１Ｂが熱硬化することによって硬化物部４Ｂが形成される。はんだ粒子１１Ａが十分に移動すれば、第１の電極２ａと第２の電極３ａとの間に位置していないはんだ粒子１１Ａの移動が開始してから、第１の電極２ａと第２の電極３ａとの間にはんだ粒子１１Ａの移動が完了するまでに、温度を一定に保持しなくてもよい。 Next, the conductive material 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A (third step). Preferably, the conductive material 11 is heated above the curing temperature of the thermosetting component 11B (thermosetting compound). At the time of this heating, the solder particles 11A that existed in the region where no electrode is formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect). When the conductive paste is used instead of the conductive film, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. Also, the solder particles 11A are melted and joined together. Further, the thermosetting component 11B is thermoset. As a result, as shown in FIG. 2C, the connection portion 4 that connects the first connection target member 2 and the second connection target member 3 is formed of the conductive material 11. The connection part 4 is formed of the conductive material 11, the solder part 4A is formed by joining a plurality of solder particles 11A, and the cured part 4B is formed by thermosetting the thermosetting component 11B. If the solder particles 11A are sufficiently moved, the first electrode 2a and the second electrode are moved after the movement of the solder particles 11A not located between the first electrode 2a and the second electrode 3a starts. It is not necessary to keep the temperature constant until the movement of the solder particles 11A is completed.
　本実施形態では、上記第２の工程及び上記第３の工程において、加圧を行わない方が好ましい。この場合には、導電材料１１には、第２の接続対象部材３の重量が加わる。このため、接続部４の形成時に、はんだ粒子１１Ａが、第１の電極２ａと第２の電極３ａとの間に効果的に集まる。なお、上記第２の工程及び上記第３の工程の内の少なくとも一方において、加圧を行えば、はんだ粒子１１Ａが第１の電極２ａと第２の電極３ａとの間に集まろうとする作用が阻害される傾向が高くなる。 In this embodiment, it is preferable that no pressure is applied in the second step and the third step. In this case, the weight of the second connection target member 3 is added to the conductive material 11. For this reason, when the connection part 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. In addition, if pressure is applied in at least one of the second step and the third step, the solder particles 11A tend to collect between the first electrode 2a and the second electrode 3a. The tendency to be inhibited becomes high.
　また、本実施形態では、加圧を行っていないため、導電材料を塗布した第１の接続対象部材に、第２の接続対象部材を重ね合わせた際に、第１の接続対象部材の電極と第２の接続対象部材の電極のアライメントがずれた状態で、第１の接続対象部材と第２の接続対象部材とが重ね合わされた場合でも、そのずれを補正して、第１の接続対象部材の電極と第２の接続対象部材との電極を接続させることができる（セルフアライメント効果）。これは、第１の接続対象部材の電極と第２の接続対象部材の電極との間に自己凝集した溶融したはんだが、第１の接続対象部材の電極と第２の接続対象部材の電極との間のはんだと導電材料のその他の成分とが接する面積が最小となる方がエネルギー的に安定になるため、その最小の面積となる接続構造であるアライメントのあった接続構造にする力が働くためである。この際、導電材料が硬化していないこと、及び、その温度、時間にて、導電材料の導電性粒子以外の成分の粘度が十分低いことが望ましい。 Moreover, in this embodiment, since pressurization is not performed, when the second connection target member is superimposed on the first connection target member to which the conductive material is applied, the electrode of the first connection target member Even when the first connection target member and the second connection target member are overlapped in a state where the alignment of the electrodes of the second connection target member is shifted, the shift is corrected and the first connection target member is corrected. Can be connected to the electrode of the second connection target member (self-alignment effect). This is because the molten solder self-aggregated between the electrode of the first connection target member and the electrode of the second connection target member is the electrode of the first connection target member and the electrode of the second connection target member. As the area where the solder and the other components of the conductive material are in contact with each other is minimized, the energy becomes more stable. Therefore, the force that makes the connection structure with alignment, which is the connection structure with the smallest area, works. Because. At this time, it is desirable that the conductive material is not cured, and that the viscosity of components other than the conductive particles of the conductive material is sufficiently low at that temperature and time.
　このようにして、図１に示す接続構造体１が得られる。なお、上記第２の工程と上記第３の工程とは連続して行われてもよい。また、上記第２の工程を行った後に、得られる第１の接続対象部材２と導電材料１１と第２の接続対象部材３との積層体を、加熱部に移動させて、上記第３の工程を行ってもよい。上記加熱を行うために、加熱部材上に上記積層体を配置してもよく、加熱された空間内に上記積層体を配置してもよい。 In this way, the connection structure 1 shown in FIG. 1 is obtained. The second step and the third step may be performed continuously. Moreover, after performing the said 2nd process, the laminated body of the 1st connection object member 2, the electrically-conductive material 11, and the 2nd connection object member 3 which are obtained is moved to a heating part, and the said 3rd connection object is carried out. You may perform a process. In order to perform the heating, the laminate may be disposed on a heating member, or the laminate may be disposed in a heated space.
　上記第３の工程における上記加熱温度は、好ましくは１４０℃以上、より好ましくは１６０℃以上であり、好ましくは４５０℃以下、より好ましくは２５０℃以下、更に好ましくは２００℃以下である。 The heating temperature in the third step is preferably 140 ° C. or higher, more preferably 160 ° C. or higher, preferably 450 ° C. or lower, more preferably 250 ° C. or lower, and still more preferably 200 ° C. or lower.
　上記第３の工程における加熱方法としては、はんだの融点以上及び熱硬化性化合物の硬化温度以上に、接続構造体全体を、リフロー炉を用いて又はオーブンを用いて加熱する方法や、接続構造体の接続部のみを局所的に加熱する方法が挙げられる。 As a heating method in the third step, a method of heating the entire connection structure using a reflow furnace or an oven above the melting point of the solder and the curing temperature of the thermosetting compound, or a connection structure The method of heating only the connection part of these is mentioned.
　上記第１，第２の接続対象部材は、特に限定されない。上記第１，第２の接続対象部材としては、具体的には、半導体チップ、半導体パッケージ、ＬＥＤチップ、ＬＥＤパッケージ、コンデンサ及びダイオード等の電子部品、並びに樹脂フィルム、プリント基板、フレキシブルプリント基板、フレキシブルフラットケーブル、リジッドフレキシブル基板、ガラスエポキシ基板及びガラス基板等の回路基板などの電子部品等が挙げられる。上記第１，第２の接続対象部材は、電子部品であることが好ましい。 The first and second connection target members are not particularly limited. Specifically as said 1st, 2nd connection object member, electronic components, such as a semiconductor chip, a semiconductor package, LED chip, LED package, a capacitor | condenser, a diode, and a resin film, a printed circuit board, a flexible printed circuit board, flexible Examples include electronic components such as flat cables, rigid flexible substrates, glass epoxy substrates, and circuit boards such as glass substrates. The first and second connection target members are preferably electronic components.
　上記第１の接続対象部材及び上記第２の接続対象部材の内の少なくとも一方が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板であることが好ましい。上記第２の接続対象部材が、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板であることが好ましい。樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル及びリジッドフレキシブル基板は、柔軟性が高く、比較的軽量であるという性質を有する。このような接続対象部材の接続に導電フィルムを用いた場合には、はんだが電極上に集まりにくい傾向がある。これに対して、導電ペーストを用いることで、樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板を用いたとしても、はんだを電極上に効率的に集めることで、電極間の導通信頼性を充分に高めることができる。樹脂フィルム、フレキシブルプリント基板、フレキシブルフラットケーブル又はリジッドフレキシブル基板を用いる場合に、半導体チップなどの他の接続対象部材を用いた場合と比べて、加圧を行わないことによる電極間の導通信頼性の向上効果がより一層効果的に得られる。 It is preferable that at least one of the first connection target member and the second connection target member is a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. The second connection target member is preferably a resin film, a flexible printed board, a flexible flat cable, or a rigid flexible board. Resin films, flexible printed boards, flexible flat cables, and rigid flexible boards have the property of being highly flexible and relatively lightweight. When a conductive film is used for connection of such a connection object member, there exists a tendency for a solder not to gather on an electrode. On the other hand, by using a conductive paste, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible circuit board is used, the conductive reliability between the electrodes can be efficiently collected by collecting the solder on the electrodes. Can be sufficiently increased. When using a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible circuit board, the reliability of conduction between electrodes by not applying pressure compared to the case of using other connection target members such as a semiconductor chip. The improvement effect can be obtained more effectively.
　上記接続対象部材に設けられている電極としては、金電極、ニッケル電極、錫電極、アルミニウム電極、銅電極、モリブデン電極、銀電極、ＳＵＳ電極、及びタングステン電極等の金属電極が挙げられる。上記接続対象部材がフレキシブルプリント基板である場合には、上記電極は金電極、ニッケル電極、錫電極、銀電極又は銅電極であることが好ましい。上記接続対象部材がガラス基板である場合には、上記電極はアルミニウム電極、銅電極、モリブデン電極、銀電極又はタングステン電極であることが好ましい。なお、上記電極がアルミニウム電極である場合には、アルミニウムのみで形成された電極であってもよく、金属酸化物層の表面にアルミニウム層が積層された電極であってもよい。上記金属酸化物層の材料としては、３価の金属元素がドープされた酸化インジウム及び３価の金属元素がドープされた酸化亜鉛等が挙げられる。上記３価の金属元素としては、Ｓｎ、Ａｌ及びＧａ等が挙げられる。 Examples of the electrode provided on the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode. When the connection object member is a flexible printed board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode. When the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode. In addition, when the said electrode is an aluminum electrode, the electrode formed only with aluminum may be sufficient and the electrode by which the aluminum layer was laminated | stacked on the surface of the metal oxide layer may be sufficient. Examples of the material for the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, and Ga.
　以下、実施例及び比較例を挙げて、本発明を具体的に説明する。本発明は、以下の実施例のみに限定されない。 Hereinafter, the present invention will be specifically described with reference to examples and comparative examples. The present invention is not limited only to the following examples.
　（１）チイラン基及びトリアジン骨格を有する熱硬化性化合物Ａの合成：
　攪拌機、冷却機及び温度計を備えた容器内に、メタノール１１００ｍＬと、トリメチルチオ尿素４００ｇとを加えて容器内に第１の溶液を調製した。その後、容器内の温度を６０℃に保持した。 (1) Synthesis of thermosetting compound A having thiirane group and triazine skeleton:
In a container equipped with a stirrer, a cooler and a thermometer, 1100 mL of methanol and 400 g of trimethylthiourea were added to prepare a first solution in the container. Thereafter, the temperature in the container was kept at 60 ° C.
　次に、６０℃に保持された第１の溶液を攪拌しながら、該第１の溶液中に、ＴＥＰＩＣ－ＶＬ（日産化学工業社製）６００ｇとトルエン３６００ｍｌとを入れた後、３０分間さらに攪拌し、エポキシ化合物含有溶液を得た。 Next, while stirring the first solution maintained at 60 ° C., 600 g of TEPIC-VL (manufactured by Nissan Chemical Industries) and 3600 ml of toluene were added to the first solution, and further stirred for 30 minutes. An epoxy compound-containing solution was obtained.
　次に、上記エポキシ化合物含有溶液を攪拌しながら、窒素フロー下、６０℃で５時間反応させた。その後、容器内の溶液を分液ロートに移し、２時間静置し、溶液を分離させた。分液ロート内の下方の溶液を排出し、上澄み液を取り出した。取り出された上澄み液にトルエン９５０ｍＬを加え、攪拌し、２時間静置した。 Next, the epoxy compound-containing solution was allowed to react at 60 ° C. for 5 hours under a nitrogen flow while stirring. Thereafter, the solution in the container was transferred to a separating funnel and allowed to stand for 2 hours to separate the solution. The lower solution in the separatory funnel was discharged, and the supernatant was taken out. 950 mL of toluene was added to the removed supernatant, stirred and allowed to stand for 2 hours.
　次に、トルエンが加えられた上澄み液に純水を入れ、撹拌、下方の溶液の排出を繰り返すことで洗浄を行った。 Next, washing was performed by adding pure water to the supernatant liquid to which toluene was added, repeating stirring and discharging the lower solution.
　その後、上澄み液に、硫酸マグネシウム２００ｇを加え、５分間攪拌した。攪拌後、ろ紙により硫酸マグネシウムを取り除いて、溶液を分離した。真空乾燥機を用いて、減圧乾燥することにより、残存している溶剤を除去した。このようにして、チイラン基及びトリアジン骨格を有する熱硬化性化合物Ａを得た。 Thereafter, 200 g of magnesium sulfate was added to the supernatant and stirred for 5 minutes. After stirring, magnesium sulfate was removed with a filter paper to separate the solution. The remaining solvent was removed by drying under reduced pressure using a vacuum dryer. In this way, a thermosetting compound A having a thiirane group and a triazine skeleton was obtained.
　クロロホルムを溶媒として、得られた熱硬化性化合物Ａの１Ｈ－ＮＭＲの測定を行った。この結果、エポキシ基がエピスルフィド基に変換されていることを確認した。 1 H-NMR measurement of the obtained thermosetting compound A was performed using chloroform as a solvent. As a result, it was confirmed that the epoxy group was converted to an episulfide group.
　（２）チイラン基及びトリアジン骨格を有する熱硬化性化合物Ｂの合成：
　ＴＥＰＩＣ－ＶＬ（日産化学工業社製）をＴＥＰＩＣ－ＨＰ（日産化学工業社製）に変更し、容器内温度を８０℃に変更したこと以外は、熱硬化性化合物Ａと同様にして、チイラン基及びトリアジン骨格を有する熱硬化性化合物Ｂを得た。 (2) Synthesis of thermosetting compound B having thiirane group and triazine skeleton:
Similar to thermosetting compound A, except that TEPIC-VL (Nissan Chemical Industry Co., Ltd.) was changed to TEPIC-HP (Nissan Chemical Industry Co., Ltd.) and the temperature in the container was changed to 80 ° C. And the thermosetting compound B which has a triazine skeleton was obtained.
　クロロホルムを溶媒として、得られた熱硬化性化合物Ｂの１Ｈ－ＮＭＲの測定を行った。この結果、エポキシ基がエピスルフィド基に変換されていることを確認した。得られた熱硬化性化合物Ｂの融点は１５０℃であった。 1 H-NMR of the obtained thermosetting compound B was measured using chloroform as a solvent. As a result, it was confirmed that the epoxy group was converted to an episulfide group. The melting point of the obtained thermosetting compound B was 150 ° C.
　熱硬化性化合物１：エポキシ化合物、ＡＤＥＫＡ社製「ＥＰ－３３００」、エポキシ当量１６０ｇ／ｅｑ
　熱硬化性化合物２：エポキシ化合物、日産化学工業社製「ＴＥＰＩＣ－ＳＳ」、エポキシ当量１００ｇ／ｅｑ
　熱硬化性化合物３：エポキシ化合物、日産化学工業社製「ＴＥＰＩＣ－ＶＬ」、エポキシ当量１３５ｇ／ｅｑ Thermosetting compound 1: Epoxy compound, “EP-3300” manufactured by ADEKA, epoxy equivalent 160 g / eq
Thermosetting compound 2: Epoxy compound, “TEPIC-SS” manufactured by Nissan Chemical Industries, Ltd., epoxy equivalent 100 g / eq
Thermosetting compound 3: Epoxy compound, “TEPIC-VL” manufactured by Nissan Chemical Industries, epoxy equivalent 135 g / eq
　熱硬化剤１：トリメチロールプロパントリス（３－メルカプトプロピネート）、ＳＣ有機化学社製「ＴＭＭＰ」 Thermosetting agent 1: Trimethylolpropane tris (3-mercaptopropinate), “TMMP” manufactured by SC Organic Chemical Co., Ltd.
　潜在性エポキシ熱硬化剤１：Ｔ＆Ｋ　ＴＯＫＡ社製「フジキュア７０００」
　潜在性エポキシ熱硬化剤２：旭化成イーマテリアルズ社製「ＨＸＡ－３９２２ＨＰ」 Latent epoxy thermosetting agent 1: “Fujicure 7000” manufactured by T & K TOKA
Latent epoxy thermosetting agent 2: “HXA-3922HP” manufactured by Asahi Kasei E-Materials
　フラックス１の合成：
　グルタル酸２５重量部、グルタル酸モノメチル２５重量部を３つ口フラスコに入れ、窒素フロー下にて、８０℃で溶解させた。その後、ベンジルアミン５７重量部を添加し、１５０℃で減圧下２時間反応させることにより、２５℃で固体である、アミド基を有するフラックス１を得た。
　フラックス２：グルタル酸モノメチル、和光純薬工業社製 Synthesis of flux 1:
25 parts by weight of glutaric acid and 25 parts by weight of monomethyl glutarate were placed in a three-necked flask and dissolved at 80 ° C. under a nitrogen flow. Then, 57 parts by weight of benzylamine was added and reacted at 150 ° C. under reduced pressure for 2 hours to obtain a flux 1 having an amide group that was solid at 25 ° C.
Flux 2: Monomethyl glutarate, manufactured by Wako Pure Chemical Industries
　絶縁性粒子：平均粒子径３０μｍ、ＣＶ値５％、軟化点３３０℃、積水化学工業社製、ジビニルベンゼン架橋粒子 Insulating particles: average particle size 30 μm, CV value 5%, softening point 330 ° C., Sekisui Chemical Co., Ltd., divinylbenzene crosslinked particles
　カルボジイミド化合物１：カルボジライトＶ０２Ｂ（日清紡社製） Carbodiimide compound 1: Carbodilite V02B (Nisshinbo Co., Ltd.)
　はんだ粒子１の作製方法：
　ＳｎＢｉはんだ粒子（三井金属社製「ＤＳ－１０」、平均粒子径（メディアン径１２μｍ））２００ｇ、イソシアネート基を有するシランカップリング剤（信越シリコーン社製「ＫＢＥ－９００７」）２０ｇ、及びアセトン７０ｇを３つ口フラスコに秤量した。室温で撹拌しながら、はんだ粒子の表面の水酸基とイソシアネート基との反応触媒であるジブチルスズラウレート０．２５ｇを添加し、撹拌下、窒素雰囲気下にて１００℃で２時間加熱した。その後、メタノール１２０ｇ、及び酢酸０．０５ｇ添加し、撹拌下、窒素雰囲気下にて、６０℃で１時間加熱した。 Method for producing solder particles 1:
200 g of SnBi solder particles (“DS-10” manufactured by Mitsui Kinzoku Co., Ltd., average particle diameter (median diameter 12 μm)), 20 g of a silane coupling agent having an isocyanate group (“KBE-9007” manufactured by Shin-Etsu Silicone), and 70 g of acetone. Weighed into a three-necked flask. While stirring at room temperature, 0.25 g of dibutyltin laurate, which is a reaction catalyst for hydroxyl groups and isocyanate groups on the surface of the solder particles, was added, and the mixture was heated at 100 ° C. for 2 hours under stirring in a nitrogen atmosphere. Thereafter, 120 g of methanol and 0.05 g of acetic acid were added, and the mixture was heated at 60 ° C. for 1 hour under stirring in a nitrogen atmosphere.
　その後、室温まで冷却し、ろ紙ではんだ粒子をろ過し、真空乾燥にて、室温で１時間脱溶剤を行い、はんだ粒子を得た。 Thereafter, the mixture was cooled to room temperature, the solder particles were filtered with a filter paper, and the solvent was removed by vacuum drying at room temperature for 1 hour to obtain solder particles.
　上記はんだ粒子を、３つ口フラスコに入れ、アセトン４５ｇ、アジピン酸モノエチル４０ｇ、及びジメシチルアンモニウムペンタフルオロベンゼンスルホナート０．２ｇを添加し、撹拌下、窒素雰囲気下で６５℃で１時間反応させた後、真空乾燥することで脱溶剤を行った。 Put the solder particles in a three-necked flask, add 45 g of acetone, 40 g of monoethyl adipate, and 0.2 g of dimesityl ammonium pentafluorobenzenesulfonate, and react for 1 hour at 65 ° C. in a nitrogen atmosphere with stirring. Then, the solvent was removed by vacuum drying.
　その後、上記はんだ粒子を、３つ口フラスコに入れ、アセトン８５ｇ、アジピン酸４０ｇ、及びランタンイソプロポキシド０．５ｇを添加し、６５℃で１時間反応させた後、室温まで冷却し、ろ紙ではんだ粒子をろ過し、ろ紙上ではんだ粒子をアセトンにて２回、ヘキサンにて１回洗浄したのち、真空乾燥にて、室温で１時間脱溶剤を行った。 Thereafter, the solder particles are put into a three-necked flask, 85 g of acetone, 40 g of adipic acid, and 0.5 g of lanthanum isopropoxide are added, reacted at 65 ° C. for 1 hour, cooled to room temperature, and filtered with paper. The solder particles were filtered, and the solder particles were washed twice with acetone and once with hexane on the filter paper, and then the solvent was removed by vacuum drying at room temperature for 1 hour.
　得られたはんだ粒子をボールミルで解砕した後、所定のＣＶ値となるように篩を選択した。 After pulverizing the obtained solder particles with a ball mill, a sieve was selected so that a predetermined CV value was obtained.
　これにより、はんだ粒子１を得た。得られたはんだ粒子１では、ＣＶ値２０％、酸価：０．５ｍｇ／ＫＯＨであった。 Thereby, solder particles 1 were obtained. The obtained solder particles 1 had a CV value of 20% and an acid value of 0.5 mg / KOH.
　はんだ粒子２の作製方法：
　ろ紙上ではんだ粒子をヘキサンにて１回洗浄したこと以外は、はんだ粒子１と同様にして、はんだ粒子２を作製した。得られたはんだ粒子２では、ＣＶ値２０％、酸価：１３ｍｇ／ＫＯＨであった。 Method for producing solder particles 2:
Solder particles 2 were produced in the same manner as the solder particles 1 except that the solder particles were washed once with hexane on the filter paper. The obtained solder particles 2 had a CV value of 20% and an acid value of 13 mg / KOH.
　はんだ粒子Ａ（ＳｎＢｉはんだ粒子、融点１３９℃、三井金属社製「ＤＳ－１０」、平均粒子径（メディアン径１２μｍ））、酸価：０．２ｍｇ／ＫＯＨ Solder particles A (SnBi solder particles, melting point 139 ° C., “DS-10” manufactured by Mitsui Kinzoku Co., average particle diameter (median diameter 12 μm)), acid value: 0.2 mg / KOH
　（はんだ粒子のＣＶ値）
　ＣＶ値を、レーザー回折式粒度分布測定装置（堀場製作所社製「ＬＡ－９２０」）にて、測定した。 (CV value of solder particles)
The CV value was measured with a laser diffraction particle size distribution analyzer (“LA-920” manufactured by Horiba, Ltd.).
　（はんだ粒子の酸価）
　エタノールにフェノールフタレインを入れ、０．１Ｎ－ＫＯＨにて中和した溶液５０ｍｌに対し、導電性粒子（はんだ粒子）１ｇを入れ、超音波処理にて分散させた後、０．１Ｎ－ＫＯＨにて滴定することで、酸価を求めた。 (Acid value of solder particles)
1 g of conductive particles (solder particles) is added to 50 ml of a solution obtained by adding phenolphthalein to ethanol and neutralizing with 0.1 N-KOH, and dispersing by ultrasonic treatment. The acid value was determined by titration.
　（実施例１～５及び比較例１～３）
　（１）異方性導電ペーストの作製
　下記の表１に示す成分を下記の表１に示す配合量で配合して、異方性導電ペーストを得た。 (Examples 1 to 5 and Comparative Examples 1 to 3)
(1) Preparation of anisotropic conductive paste The components shown in Table 1 below were blended in the blending amounts shown in Table 1 to obtain anisotropic conductive paste.
　接続構造体を下記のようにして作製した。 The connection structure was produced as follows.
　（２）接続構造体（Ｌ／Ｓ＝７５μｍ／７５μｍ）の作製
　Ｌ／Ｓが７５μｍ／７５μｍ、電極長さ３ｍｍの銅電極パターン（銅電極の厚み１２μｍ）を上面に有するガラスエポキシ基板（ＦＲ－４基板、厚み０．６ｍｍ）（第１の接続対象部材）を用意した。また、Ｌ／Ｓが７５μｍ／７５μｍ、電極長さ３ｍｍの銅電極パターン（銅電極の厚み１２μｍ）を下面に有するフレキシブルプリント基板（ポリイミドにより形成されている、第２の接続対象部材、厚み０．１ｍｍ）を用意した。 (2) Fabrication of connection structure (L / S = 75 μm / 75 μm) Glass epoxy substrate (FR−) having a copper electrode pattern (copper electrode thickness 12 μm) with L / S of 75 μm / 75 μm and electrode length of 3 mm on the upper surface 4 substrates, thickness 0.6 mm) (first connection object member) was prepared. Further, a flexible printed circuit board (a second connection target member formed of polyimide, having a thickness of 0.1 μm) having a copper electrode pattern (copper electrode thickness 12 μm) having an L / S of 75 μm / 75 μm and an electrode length of 3 mm on the lower surface. 1 mm) was prepared.
　ガラスエポキシ基板とフレキシブルプリント基板との重ね合わせ面積は、１．５ｃｍ×３ｍｍとし、接続した電極数は７５対とした。 The overlapping area of the glass epoxy substrate and the flexible printed circuit board was 1.5 cm × 3 mm, and the number of connected electrodes was 75 pairs.
　上記ガラスエポキシ基板の上面に、作製直後の異方性導電ペーストを、ガラスエポキシ基板の電極上で厚さ１００μｍとなるように、塗工し、異方性導電ペースト層を形成した。次に、異方性導電ペースト層の上面に上記フレキシブルプリント基板を、電極同士が対向するように積層し、フレキシブルプリント基板の上面に加熱ヘッドを載せ、室温から１８０℃まで昇温する間に、横方向の電極間のはんだ粒子を凝集させ、さらに上下の電極間にはんだ粒子を凝集、溶融させた後、さらに１８０℃で１０秒加熱して、異方性導電ペースト層を硬化させて、接続構造体を得た。このとき、異方性導電ペースト層には、上記フレキシブルプリント基板の重量と、フレキシブルプリント基板が反らない程度の圧力が加わる。 The anisotropic conductive paste immediately after fabrication was applied on the upper surface of the glass epoxy substrate so as to have a thickness of 100 μm on the electrode of the glass epoxy substrate to form an anisotropic conductive paste layer. Next, the flexible printed circuit board is laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other, a heating head is placed on the upper surface of the flexible printed circuit board, and the temperature is raised from room temperature to 180 ° C., After agglomerating solder particles between the electrodes in the horizontal direction, and further aggregating and melting the solder particles between the upper and lower electrodes, further heating at 180 ° C. for 10 seconds to cure the anisotropic conductive paste layer and connect A structure was obtained. At this time, pressure is applied to the anisotropic conductive paste layer so that the weight of the flexible printed circuit board and the flexible printed circuit board do not warp.
　（評価）
　（１）粘度
　作製直後の異方性導電ペーストの２５℃での粘度（η２５）を、Ｅ型粘度計（東機産業社製「ＴＶＥ２２Ｌ」）を用いて、２５℃及び５ｒｐｍの条件で測定した。 (Evaluation)
(1) Viscosity The viscosity (η25) at 25 ° C. of the anisotropic conductive paste immediately after production was measured using an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.) under the conditions of 25 ° C. and 5 rpm. .
　（２）保存安定性
　異方性導電ペーストを２３℃で２４間保管した。保管後に、異方性導電ペーストの２５℃での粘度（η２５）を、Ｅ型粘度計（東機産業社製「ＴＶＥ２２Ｌ」）を用いて、２５℃及び５ｒｐｍの条件で測定した。保存安定性を下記の基準で判定した。 (2) Storage stability The anisotropic conductive paste was stored at 23 ° C. for 24 hours. After storage, the viscosity (η25) at 25 ° C. of the anisotropic conductive paste was measured under the conditions of 25 ° C. and 5 rpm using an E-type viscometer (“TVE22L” manufactured by Toki Sangyo Co., Ltd.). Storage stability was determined according to the following criteria.
　［保存安定性の判定基準］
　○○：保管後の粘度／保管前の粘度が１．２倍未満
　○：保管後の粘度／保管前の粘度が１．２倍以上、１．５倍未満
　△：保管後の粘度／保管前の粘度が１．５倍以上、２倍未満
　×：保管後の粘度／保管前の粘度が２倍以上 [Criteria for storage stability]
◯: Viscosity after storage / viscosity before storage is less than 1.2 times ○: Viscosity after storage / viscosity before storage is 1.2 times or more and less than 1.5 times △: Viscosity after storage / before storage Viscosity of 1.5 times or more and less than 2 times ×: viscosity after storage / viscosity before storage is 2 times or more
　（３）導電性粒子を除く成分の流出防止性
　得られた接続構造体において、電極からはみ出した部分の長さを顕微鏡にて観察、測定することにより、導電性粒子を除く成分の流出防止性を評価した。導電性粒子を除く成分の流出防止性を下記の基準で判定した。 (3) Prevention of outflow of components excluding conductive particles In the obtained connection structure, the length of the portion protruding from the electrode is observed and measured with a microscope to prevent outflow of components excluding conductive particles. Evaluated. The outflow prevention property of the components excluding the conductive particles was determined according to the following criteria.
　［導電性粒子を除く成分の流出防止性の判定基準］
　○○：電極からはみ出した部分の長さが１５０μｍ未満
　○：電極からはみだした部分の長さが１５０μｍ以上、２００μｍ未満
　△：電極からはみだした部分の長さが２００μｍ以上、３００μｍ未満
　×：電極からはみだした部分の長さが３００μｍ以上 [Criteria for prevention of outflow of components excluding conductive particles]
○: The length of the portion protruding from the electrode is less than 150 μm ○: The length of the portion protruding from the electrode is 150 μm or more and less than 200 μm Δ: The length of the portion protruding from the electrode is 200 μm or more and less than 300 μm ×: From the electrode The length of the protruding part is 300 μm or more
　（４）はんだ部の厚み
　得られた接続構造体を断面観察することにより、上下の電極間に位置しているはんだ部の厚みを評価した。 (4) Thickness of the solder part By observing a cross section of the obtained connection structure, the thickness of the solder part located between the upper and lower electrodes was evaluated.
　（５）電極上のはんだの配置精度１
　得られた接続構造体において、第１の電極と接続部と第２の電極との積層方向に第１の電極と第２の電極との対向し合う部分をみたときに、第１の電極と第２の電極との対向し合う部分の面積１００％中の、接続部中のはんだ部が配置されている面積の割合Ｘを評価した。電極上のはんだの配置精度１を下記の基準で判定した。 (5) Solder placement accuracy on electrode 1
In the obtained connection structure, when the portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode is viewed, The ratio X of the area where the solder part in the connection part is arranged in the area of 100% of the part facing the second electrode was evaluated. The solder placement accuracy 1 on the electrode was determined according to the following criteria.
　［電極上のはんだの配置精度１の判定基準］
　○○：割合Ｘが７０％以上
　○：割合Ｘが６０％以上、７０％未満
　△：割合Ｘが５０％以上、６０％未満
　×：割合Ｘが５０％未満 [Criteria for solder placement accuracy 1 on electrode]
○○: Ratio X is 70% or more ○: Ratio X is 60% or more and less than 70% Δ: Ratio X is 50% or more and less than 60% X: Ratio X is less than 50%
　（６）電極上のはんだの配置精度２
　得られた接続構造体において、第１の電極と接続部と第２の電極との積層方向と直交する方向に第１の電極と第２の電極との対向し合う部分をみたときに、接続部中のはんだ部１００％中、第１の電極と第２の電極との対向し合う部分に配置されている接続部中のはんだ部の割合Ｙを評価した。電極上のはんだの配置精度２を下記の基準で判定した。 (6) Solder placement accuracy on electrode 2
In the obtained connection structure, when the portion where the first electrode and the second electrode face each other in the direction orthogonal to the stacking direction of the first electrode, the connection portion, and the second electrode is seen, The ratio Y of the solder part in the connection part arrange | positioned in the part which the 1st electrode and 2nd electrode oppose in 100% of solder parts in a part was evaluated. The solder placement accuracy 2 on the electrode was determined according to the following criteria.
　［電極上のはんだの配置精度２の判定基準］
　○○：割合Ｙが９９％以上
　○：割合Ｙが９０％以上、９９％未満
　△：割合Ｙが７０％以上、９０％未満
　×：割合Ｙが７０％未満 [Criteria for solder placement accuracy 2 on electrode]
◯: Ratio Y is 99% or more ○: Ratio Y is 90% or more and less than 99% △: Ratio Y is 70% or more and less than 90% X: Ratio Y is less than 70%
　（７）上下の電極間の導通信頼性
　得られた接続構造体（ｎ＝１５個）において、上下の電極間の１接続箇所当たりの接続抵抗をそれぞれ、４端子法により、測定した。接続抵抗の平均値を算出した。なお、電圧＝電流×抵抗の関係から、一定の電流を流した時の電圧を測定することにより接続抵抗を求めることができる。導通信頼性を下記の基準で判定した。 (7) Conduction reliability between upper and lower electrodes In the obtained connection structure (n = 15), the connection resistance per connection portion between the upper and lower electrodes was measured by a four-terminal method. The average value of connection resistance was calculated. Note that the connection resistance can be obtained by measuring the voltage when a constant current is passed from the relationship of voltage = current × resistance. The conduction reliability was determined according to the following criteria.
　［導通信頼性の判定基準］
　○○：接続抵抗の平均値が５０ｍΩ以下
　○：接続抵抗の平均値が５０ｍΩを超え、７０ｍΩ以下
　△：接続抵抗の平均値が７０ｍΩを超え、１００ｍΩ以下
　×：接続抵抗の平均値が１００ｍΩを超える、又は接続不良が生じている [Judgment criteria for conduction reliability]
◯: Average connection resistance is 50 mΩ or less ○: Average connection resistance exceeds 50 mΩ, 70 mΩ or less △: Average connection resistance exceeds 70 mΩ, 100 mΩ or less ×: Average connection resistance exceeds 100 mΩ Or there is a bad connection
　（８）横方向に隣接する電極間の絶縁信頼性
　得られた接続構造体（ｎ＝１５個）において、８５℃、湿度８５％の雰囲気中に１００時間放置後、横方向に隣接する電極間に、１５Ｖを印加し、抵抗値を２５箇所で測定した。絶縁信頼性を下記の基準で判定した。 (8) Insulation reliability between electrodes adjacent in the horizontal direction In the obtained connection structure (n = 15), after leaving in an atmosphere of 85 ° C. and 85% humidity for 100 hours, between the electrodes adjacent in the horizontal direction Then, 15V was applied, and the resistance value was measured at 25 locations. Insulation reliability was judged according to the following criteria.
　［絶縁信頼性の判定基準］
　○○○：接続抵抗の平均値が１０１４Ω以上
　○○：接続抵抗の平均値が１０８Ω以上、１０１４Ω未満
　○：接続抵抗の平均値が１０６Ω以上、１０８Ω未満
　△：接続抵抗の平均値が１０５Ω以上、１０６Ω未満
　×：接続抵抗の平均値が１０５Ω未満 [Criteria for insulation reliability]
○○○: The average value of connection resistance is 10 14 Ω or more ○○: The average value of connection resistance is 10 8 Ω or more and less than 10 14 Ω ○: The average value of connection resistance is 10 6 Ω or more and less than 10 8 Ω : The average value of the connection resistance is 10 5 Ω or more and less than 10 6 Ω ×: The average value of the connection resistance is less than 10 5 Ω
　（９）上下の電極間の位置ずれ
　得られた接続構造体において、第１の電極と接続部と第２の電極との積層方向に第１の電極と第２の電極との対向し合う部分をみたときに、第１の電極の中心線と第２の電極の中心線とが揃っているか否か、並びに位置ずれの距離を評価した。上下の電極間の位置ずれを下記の基準で判定した。 (9) Position shift between upper and lower electrodes In the obtained connection structure, a portion where the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode The center line of the first electrode and the center line of the second electrode were aligned, and the distance of the displacement was evaluated. The positional deviation between the upper and lower electrodes was determined according to the following criteria.
　［上下の電極間の位置ずれの判定基準］
　○○：位置ずれが１５μｍ未満
　○：位置ずれが１５μｍ以上、２５μｍ未満
　△：位置ずれが２５μｍ以上、４０μｍ未満
　×：位置ずれが４０μｍ以上 [Criteria for misregistration between upper and lower electrodes]
○: Misalignment is less than 15 μm ○: Misalignment is 15 μm or more and less than 25 μm Δ: Misalignment is 25 μm or more and less than 40 μm ×: Misalignment is 40 μm or more
　（１０）耐熱性（耐熱黄変性）
　下記の表１に示す配合成分において、導電ペースト中のはんだ粒子を除く成分を配合した配合物を用意し、厚み０．６ｍｍの硬化物のシートを作成した。１５０℃、２０００時間保管した後、測定波長４００ｎｍでの透過率を測定することで、耐熱性（耐熱黄変性）を評価した。耐熱性を下記の基準で判定した。 (10) Heat resistance (heat-resistant yellowing)
In the blending components shown in Table 1 below, a blend in which components other than the solder particles in the conductive paste were blended was prepared, and a cured sheet having a thickness of 0.6 mm was prepared. After storage at 150 ° C. for 2000 hours, heat resistance (heat-resistant yellowing) was evaluated by measuring transmittance at a measurement wavelength of 400 nm. The heat resistance was determined according to the following criteria.
　［耐熱性の判定基準］
　○○：高温保管後の透過率が、９３％以上
　○：高温保管後の透過率が、９０％以上、９３％未満
　△：高温保管後の透過率が、８７％以上、９０％未満
　×：○○、○及び△の基準に相当しない [Criteria for heat resistance]
○○: Permeability after high-temperature storage is 93% or more ○: Permeability after high-temperature storage is 90% or more and less than 93% Δ: Permeability after high-temperature storage is 87% or more and less than 90% ×: Not equivalent to ○○, ○ and △ criteria
　結果を下記の表１に示す。 The results are shown in Table 1 below.
Figure JPOXMLDOC01-appb-T000007
Figure JPOXMLDOC01-appb-T000007
　フレキシブルプリント基板にかえて、樹脂フィルム、フレキシブルフラットケーブル及びリジッドフレキシブル基板を用いた場合でも、同様の傾向が見られた。 The same tendency was observed when using a resin film, a flexible flat cable, and a rigid flexible board instead of the flexible printed board.
　１，１Ｘ…接続構造体
　２…第１の接続対象部材
　２ａ…第１の電極
　３…第２の接続対象部材
　３ａ…第２の電極
　４，４Ｘ…接続部
　４Ａ，４ＸＡ…はんだ部
　４Ｂ，４ＸＢ…硬化物部
　１１…導電材料
　１１Ａ…はんだ粒子（導電性粒子）
　１１Ｂ…熱硬化性成分
　２１…導電性粒子（はんだ粒子）
　３１…導電性粒子
　３２…基材粒子
　３３…導電部（はんだを有する導電部）
　３３Ａ…第２の導電部
　３３Ｂ…はんだ部
　４１…導電性粒子
　４２…はんだ部 DESCRIPTION OF SYMBOLS 1,1X ... Connection structure 2 ... 1st connection object member 2a ... 1st electrode 3 ... 2nd connection object member 3a ... 2nd electrode 4, 4X ... Connection part 4A, 4XA ... Solder part 4B, 4XB ... Cured part 11 ... Conductive material 11A ... Solder particles (conductive particles)
11B ... thermosetting component 21 ... conductive particles (solder particles)
31 ... Conductive particles 32 ... Base particle 33 ... Conductive part (conductive part having solder)
33A ... second conductive part 33B ... solder part 41 ... conductive particles 42 ... solder part

Claims (15)

  1. 　導電部の外表面部分に、はんだを有する複数の導電性粒子と、
    　熱硬化性化合物と、
    　熱硬化剤とを含み、
    　前記熱硬化性化合物が、チイラン基及びトリアジン骨格を有する熱硬化性化合物を含む、導電材料。     A plurality of conductive particles having solder on the outer surface portion of the conductive portion,
    A thermosetting compound;
    A thermosetting agent,
    The conductive material, wherein the thermosetting compound includes a thermosetting compound having a thiirane group and a triazine skeleton.
  2. 　前記チイラン基及びトリアジン骨格を有する熱硬化性化合物の融点が１４０℃以上である、請求項１に記載の導電材料。 The conductive material according to claim 1, wherein the thermosetting compound having a thiirane group and a triazine skeleton has a melting point of 140 ° C or higher.
  3. 　チイラン基及びトリアジン骨格を有する熱硬化性化合物とは異なる熱硬化性化合物を含む、請求項１又は２に記載の導電材料。 The conductive material according to claim 1, comprising a thermosetting compound different from the thermosetting compound having a thiirane group and a triazine skeleton.
  4. 　前記導電性粒子の酸価が０．１ｍｇ／ＫＯＨ以上、１０ｍｇ／ＫＯＨ以下である、請求項１～３のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 3, wherein an acid value of the conductive particles is 0.1 mg / KOH or more and 10 mg / KOH or less.
  5. 　フラックスを含む、請求項１～４のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 4, comprising a flux.
  6. 　前記フラックスが、アミド基と芳香族骨格とを有するフラックスであるか、又は、アミド基を有し、かつカルボン酸又はカルボン酸無水物とｐＫａが９．５以下であるアミノ基含有化合物との反応物であるフラックスである、請求項５に記載の導電材料。 The flux is a flux having an amide group and an aromatic skeleton, or a reaction between an amide group and a carboxylic acid or carboxylic acid anhydride and an amino group-containing compound having a pKa of 9.5 or less. The conductive material according to claim 5, wherein the conductive material is a flux.
  7. 　前記フラックスが、２５℃で固体である、請求項５又は６に記載の導電材料。 The conductive material according to claim 5 or 6, wherein the flux is solid at 25 ° C.
  8. 　カルボジイミド化合物を含む、請求項１～７のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 7, comprising a carbodiimide compound.
  9. 　前記導電性粒子は、はんだ粒子である、請求項１～８のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 8, wherein the conductive particles are solder particles.
  10. 　前記導電性粒子の表面に付着していない絶縁性粒子を含む、請求項１～９のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 9, comprising insulating particles not attached to the surface of the conductive particles.
  11. 　前記導電性粒子の平均粒子径が１μｍ以上、４０μｍ以下である、請求項１～１０のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 10, wherein an average particle diameter of the conductive particles is 1 µm or more and 40 µm or less.
  12. 　導電材料１００重量％中、前記導電性粒子の含有量が１０重量％以上、８０重量％以下である、請求項１～１１のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 11, wherein a content of the conductive particles is 10% by weight or more and 80% by weight or less in 100% by weight of the conductive material.
  13. 　２５℃で液状であり、導電ペーストである、請求項１～１２のいずれか１項に記載の導電材料。 The conductive material according to any one of claims 1 to 12, which is liquid at 25 ° C and is a conductive paste.
  14. 　少なくとも１つの第１の電極を表面に有する第１の接続対象部材と、
    　少なくとも１つの第２の電極を表面に有する第２の接続対象部材と、
    　前記第１の接続対象部材と前記第２の接続対象部材とを接続している接続部とを備え、
    　前記接続部の材料が、請求項１～１３のいずれか１項に記載の導電材料であり、
    　前記第１の電極と前記第２の電極とが前記接続部中のはんだ部により電気的に接続されている、接続構造体。     A first connection target member having at least one first electrode on its surface;
    A second connection target member having at least one second electrode on its surface;
    A connection portion connecting the first connection target member and the second connection target member;
    The material of the connecting portion is the conductive material according to any one of claims 1 to 13,
    A connection structure in which the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.
  15. 　前記第１の電極と前記接続部と前記第２の電極との積層方向に前記第１の電極と前記第２の電極との対向し合う部分をみたときに、前記第１の電極と前記第２の電極との対向し合う部分の面積１００％中の５０％以上に、前記接続部中のはんだ部が配置されている、請求項１４に記載の接続構造体。 When the first electrode and the second electrode face each other in the stacking direction of the first electrode, the connection portion, and the second electrode, the first electrode and the second electrode The connection structure according to claim 14, wherein a solder portion in the connection portion is disposed in 50% or more of an area of 100% of a portion facing the two electrodes.
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