TW201625760A - Electroconductive paste, connection structure, and method for manufacturing connection structure - Google Patents
Electroconductive paste, connection structure, and method for manufacturing connection structure Download PDFInfo
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- TW201625760A TW201625760A TW104140380A TW104140380A TW201625760A TW 201625760 A TW201625760 A TW 201625760A TW 104140380 A TW104140380 A TW 104140380A TW 104140380 A TW104140380 A TW 104140380A TW 201625760 A TW201625760 A TW 201625760A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/04—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/115—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/1152—Self-assembly, e.g. self-agglomeration of the bump material in a fluid
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- Microelectronics & Electronic Packaging (AREA)
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- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
- Non-Insulated Conductors (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
本發明係關於一種包含焊料粒子之導電糊。又,本發明係關於一種使用上述導電糊之連接構造體及連接構造體之製造方法。 The present invention relates to a conductive paste comprising solder particles. Moreover, the present invention relates to a connection structure using the above-described conductive paste and a method of manufacturing the connection structure.
異向性導電糊及異向性導電膜等異向性導電材料已廣為人知。上述異向性導電材料中,於黏合劑樹脂中分散有導電性粒子。 Anisotropic conductive materials such as an anisotropic conductive paste and an anisotropic conductive film are widely known. In the above anisotropic conductive material, conductive particles are dispersed in the binder resin.
為了獲得各種連接構造體,上述異向性導電材料例如被用於軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、以及軟性印刷基板與環氧玻璃基板之連接(FOB(Film on Board,鍍膜板))等。 In order to obtain various connection structures, the anisotropic conductive material is used, for example, for connection between a flexible printed substrate and a glass substrate (FOG (Film on Glass)), and connection between a semiconductor wafer and a flexible printed substrate (COF (Chip on) Film, film flip chip), connection of semiconductor wafer to glass substrate (COG (Chip on Glass)), and connection between flexible printed substrate and epoxy glass substrate (FOB (Film on Board)) Wait.
於藉由上述異向性導電材料,而例如將軟性印刷基板之電極與環氧玻璃基板之電極電性連接時,於環氧玻璃基板上配置包含導電性粒子之異向性導電材料。其次,積層軟性印刷基板,進行加熱及加壓。藉此,使異向性導電材料硬化,經由導電性粒子而使電極間電性連接而獲得連接構造體。 When the electrode of the flexible printed circuit board is electrically connected to the electrode of the epoxy glass substrate by the anisotropic conductive material, an anisotropic conductive material containing conductive particles is disposed on the epoxy glass substrate. Next, a flexible printed circuit board is laminated to perform heating and pressurization. Thereby, the anisotropic conductive material is cured, and the electrodes are electrically connected to each other via the conductive particles to obtain a bonded structure.
作為上述異向性導電材料之一例,於下述專利文獻1中揭示有包含含有熱硬化性樹脂之樹脂層、焊料粉、及硬化劑,且上述焊料粉與上述硬化劑存在於上述樹脂層中之接著帶。該接著帶為膜狀而並非糊狀。 As an example of the above-mentioned anisotropic conductive material, Patent Document 1 discloses a resin layer containing a thermosetting resin, a solder powder, and a curing agent, and the solder powder and the curing agent are present in the resin layer. Then bring it. This adhesive tape is in the form of a film and is not in the form of a paste.
又,於專利文獻1中揭示有使用上述接著帶之接著方法。具體而言,自下向上依序積層第一基板、接著帶、第二基板、接著帶、及第三基板而獲得積層體。此時,使設置於第一基板之表面之第一電極、與設置於第二基板之表面之第二電極對向。又,使設置於第二基板之表面之第二電極與設置於第三基板之表面之第三電極對向。然後,將積層體於特定溫度下進行加熱而進行接著。藉此,獲得連接構造體。 Further, Patent Document 1 discloses a method of using the above-described subsequent tape. Specifically, the first substrate, the subsequent tape, the second substrate, the adhesive tape, and the third substrate are sequentially laminated from the bottom to the top to obtain a laminate. At this time, the first electrode provided on the surface of the first substrate faces the second electrode provided on the surface of the second substrate. Further, the second electrode provided on the surface of the second substrate faces the third electrode provided on the surface of the third substrate. Then, the laminate is heated at a specific temperature to proceed. Thereby, the connection structure is obtained.
又,於下述專利文獻2中揭示有使第1電子零件之連接部之電極即第1電極、與第2電子零件之連接部之電極即第2電極電性連接之異向性導電性的接著劑。上述異向性導電性之接著劑包含絕緣性聚合物樹脂、接合粒子、及間隔物粒子。上述接合粒子係藉由利用施加於上述異向性導電性之接著劑之超音波而產生之熱而熔融。上述間隔物粒子具有高於上述接合粒子之熔點。作為上述接合粒子,可列舉:焊料粒子。 In the following Patent Document 2, it is disclosed that the first electrode that is the electrode of the connection portion of the first electronic component and the second electrode that is the electrode of the connection portion of the second electronic component are electrically connected to each other. Follow-up agent. The anisotropic conductive adhesive includes an insulating polymer resin, bonded particles, and spacer particles. The bonded particles are melted by heat generated by ultrasonic waves applied to the anisotropic conductive adhesive. The spacer particles have a higher melting point than the bonded particles. Examples of the above-mentioned joined particles include solder particles.
[專利文獻1]WO2008/023452A1 [Patent Document 1] WO2008/023452A1
[專利文獻2]日本專利特表2012-532979號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2012-532979
專利文獻1所記載之接著帶為膜狀而並非糊狀。因此,難以有效率地將焊料粉配置於電極(線)上。例如對於專利文獻1所記載之接著帶而言,亦容易將焊料粉之一部分配置於未形成電極之區域(間隙)。配置於未形成電極之區域之焊料粉無助於電極間之導通。 The adhesive tape described in Patent Document 1 has a film shape and is not a paste. Therefore, it is difficult to efficiently dispose the solder powder on the electrodes (lines). For example, in the adhesive tape described in Patent Document 1, it is also easy to arrange one of the solder powders in a region (gap) in which the electrode is not formed. The solder powder disposed in the region where the electrode is not formed does not contribute to the conduction between the electrodes.
又,即便為包含焊料粉之異向性導電糊,亦存在未有效率地將焊料粉配置於電極(線)上之情況。進而,於使用包含焊料粉之異向性導電糊之情形時,於導電連接後,電極間之間隔容易產生不均。又, 即便為專利文獻2所記載之接著劑,亦存在未有效率地將焊料粒子等接合粒子配置於電極(線)上之情況。又,即便如專利文獻2所記載般除焊料粒子等接合粒子外,還另外使用間隔物粒子,亦存在未有效率地將接合粒子配置於電極(線)上之情況。 Further, even in the case of an anisotropic conductive paste containing solder powder, the solder powder may be disposed on the electrode (wire) inefficiently. Further, in the case of using an anisotropic conductive paste containing solder powder, the interval between the electrodes is likely to be uneven after the conductive connection. also, In the case of the adhesive described in Patent Document 2, the bonded particles such as solder particles are not efficiently disposed on the electrode (wire). In addition, as described in Patent Document 2, in addition to the bonding particles such as solder particles, spacer particles are additionally used, and the bonding particles may not be efficiently disposed on the electrodes (lines).
本發明之目的在於提供一種可高精度地控制電極間之間隔,進而可有效率地將焊料粒子配置於電極上,而可提高電極間之導通可靠性之導電糊。又,本發明提供一種使用上述導電糊之連接構造體及連接構造體之製造方法。 An object of the present invention is to provide a conductive paste which can accurately control the interval between electrodes and can efficiently dispose solder particles on an electrode to improve the conduction reliability between electrodes. Moreover, the present invention provides a connection structure using the above-described conductive paste and a method of manufacturing the connection structure.
根據本發明之較廣態樣,提供一種導電糊,其係用以將表面具有第1電極之第1連接對象構件與表面具有第2電極之第2連接對象構件進行連接而使上述第1電極與上述第2電極電性連接者,且包含:熱硬化性成分、複數個焊料粒子、及熔點為250℃以上之複數個間隔物,且上述間隔物之平均粒徑大於上述焊料粒子之平均粒徑。 According to a broader aspect of the present invention, there is provided a conductive paste for connecting a first connection member having a first electrode on a surface thereof and a second connection member having a second electrode on a surface thereof to connect the first electrode The second electrode is electrically connected to the second electrode, and includes: a thermosetting component, a plurality of solder particles, and a plurality of spacers having a melting point of 250 ° C or higher, and an average particle diameter of the spacer is larger than an average particle of the solder particles path.
於本發明之導電糊之一特定態樣中,上述間隔物為絕緣性粒子。 In a specific aspect of the conductive paste of the present invention, the spacer is an insulating particle.
於本發明之導電糊之一特定態樣中,上述導電糊係將上述間隔物以接觸於上述第1連接對象構件與上述第2連接對象構件兩者之方式使用。 In a specific aspect of the conductive paste of the present invention, the conductive paste is used to contact the spacer between the first connection target member and the second connection target member.
於本發明之導電糊之一特定態樣中,上述導電糊係於將上述第1電極與上述第2電極電性連接時,加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,使複數個上述焊料粒子凝聚而一體化後使用。 In a specific aspect of the conductive paste of the present invention, the conductive paste is heated to a temperature higher than a melting point of the solder particles and a hardening temperature of the thermosetting component when the first electrode and the second electrode are electrically connected to each other. As described above, a plurality of the above-described solder particles are aggregated and integrated for use.
於本發明之導電糊之一特定態樣中,上述間隔物之平均粒徑相對於上述焊料粒子之平均粒徑的比為1.1以上且15以下。 In a specific aspect of the conductive paste of the present invention, the ratio of the average particle diameter of the spacer to the average particle diameter of the solder particles is 1.1 or more and 15 or less.
於本發明之導電糊之一特定態樣中,上述間隔物之含量為0.1重 量%以上且10重量%以下。 In a specific aspect of the conductive paste of the present invention, the content of the spacer is 0.1 weight. The amount is more than 10% by weight.
於本發明之導電糊之一特定態樣中,上述焊料粒子之平均粒徑為1μm以上且40μm以下。 In a specific aspect of the conductive paste of the present invention, the solder particles have an average particle diameter of 1 μm or more and 40 μm or less.
於本發明之導電糊之一特定態樣中,上述焊料粒子之含量為10重量%以上且80重量%以下。 In a specific aspect of the conductive paste of the present invention, the content of the solder particles is 10% by weight or more and 80% by weight or less.
於本發明之導電糊之一特定態樣中,上述焊料粒子之以重量%單位計之含量相對於上述間隔物之以重量%單位計之含量的比為2以上且100以下。 In a specific aspect of the conductive paste of the present invention, the ratio of the content of the solder particles in the unit of weight % to the content of the spacer in units of % by weight is 2 or more and 100 or less.
根據本發明之較廣態樣,提供一種連接構造體,其包括:第1連接對象構件,其於表面具有至少1個第1電極;第2連接對象構件,其於表面具有至少1個第2電極;及連接部,其將上述第1連接對象構件與上述第2連接對象構件連接,且上述連接部之材料為上述之導電糊,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接,上述間隔物接觸於上述第1連接對象構件與上述第2連接對象構件兩者。 According to a broader aspect of the present invention, a connection structure comprising: a first connection member having at least one first electrode on a surface thereof; and a second connection member having at least one second surface on the surface And a connecting portion that connects the first connection target member and the second connection target member, wherein a material of the connection portion is the conductive paste, and the first electrode and the second electrode are in the connection portion The solder portion is electrically connected, and the spacer contacts both the first connection target member and the second connection target member.
根據本發明之較廣態樣,提供一種連接構造體之製造方法,其包括:使用上述之導電糊,於表面具有至少1個第1電極之第1連接對象構件之表面上配置上述導電糊之步驟;於上述導電糊之與上述第1連接對象構件側相反之表面上,將表面具有至少1個第2電極之第2連接對象構件以上述第1電極與上述第2電極對向之方式進行配置之步驟;及藉由將上述導電糊加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,而藉由上述導電糊形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且藉由上述連接部中之焊料部而將上述第1電極與上述第2電極電性連接,使上述間隔物接觸於上述第1連接對象構件與上述第2連接對象構件兩者之步驟。 According to a broad aspect of the present invention, a method of manufacturing a connection structure comprising: disposing the conductive paste on a surface of a first connection member having at least one first electrode on a surface thereof using the conductive paste described above a step of forming a second connection target member having at least one second electrode on the surface of the conductive paste opposite to the first connection target member side so that the first electrode and the second electrode face each other And the step of disposing the conductive paste to a temperature equal to or higher than a melting point of the solder particles and a hardening temperature of the thermosetting component to form the first connection target member and the second connection target by the conductive paste formation a connection portion to which the member is connected, and the first electrode and the second electrode are electrically connected by the solder portion in the connection portion, and the spacer is in contact with the first connection member and the second connection member The steps of both.
於本發明之連接構造體之製造方法之一特定態樣中,將上述第1 電極與上述第2電極電性連接時,加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,使複數個上述焊料粒子凝聚而一體化。 In a specific aspect of the manufacturing method of the connection structure of the present invention, the first When the electrode is electrically connected to the second electrode, the electrode is heated to a temperature equal to or higher than the melting point of the solder particles and the hardening temperature of the thermosetting component, and a plurality of the solder particles are aggregated and integrated.
於本發明之連接構造體之製造方法之一特定態樣中,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中不進行加壓,上述第2連接對象構件之重量施加於上述導電糊。 In a specific aspect of the method for manufacturing a connection structure according to the present invention, the step of arranging the second connection member and the step of forming the connection portion are not performed, and the weight of the second connection member is applied to The above conductive paste.
上述第2連接對象構件較佳為樹脂膜、軟性印刷基板、軟性扁形電纜、或剛性軟性基板。 The second connection target member is preferably a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate.
本發明之導電糊包含熱硬化性成分、複數個焊料粒子、及熔點為250℃以上之複數個間隔物,因此於將表面具有第1電極之第1連接對象構件與表面具有第2電極之第2連接對象構件進行連接而使上述第1電極與上述第2電極電性連接之情形時,可高精度地控制電極間之間隔,進而可有效率地將焊料粒子配置於電極上,而可提高電極間之導通可靠性。 The conductive paste of the present invention comprises a thermosetting component, a plurality of solder particles, and a plurality of spacers having a melting point of 250 ° C or more. Therefore, the first connection member having the first electrode on the surface and the second electrode are provided on the surface. (2) When the connection target member is connected and the first electrode and the second electrode are electrically connected to each other, the interval between the electrodes can be controlled with high precision, and the solder particles can be efficiently disposed on the electrode, thereby improving Conductivity reliability between electrodes.
1、1X、1Y‧‧‧連接構造體 1, 1X, 1Y‧‧‧ connection structure
2、2Y‧‧‧第1連接對象構件 2, 2Y‧‧‧1st connection object component
2a‧‧‧第1電極 2a‧‧‧1st electrode
2y‧‧‧第1凸部 2y‧‧‧1st convex
3、3Y‧‧‧第2連接對象構件 3, 3Y‧‧‧2nd connection object component
3a‧‧‧第2電極 3a‧‧‧2nd electrode
3y‧‧‧第2凸部 3y‧‧‧2nd convex
4、4X、4Y‧‧‧連接部 4, 4X, 4Y‧‧‧ Connections
4A、4XA、4YA‧‧‧焊料部 4A, 4XA, 4YA‧‧‧ solder department
4B、4XB、4YB‧‧‧硬化物部 4B, 4XB, 4YB‧‧‧ hardened parts
5、5X、5Y‧‧‧間隔物 5, 5X, 5Y‧‧‧ spacers
11‧‧‧導電糊 11‧‧‧Electric paste
11A‧‧‧焊料粒子 11A‧‧‧ solder particles
11B‧‧‧熱硬化性成分 11B‧‧‧ thermosetting ingredients
圖1係模式性地表示使用本發明之一實施形態之導電糊而獲得之連接構造體的剖視圖。 Fig. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive paste according to an embodiment of the present invention.
圖2(a)~(c)係用以說明使用本發明之一實施形態之導電糊而製造連接構造體之方法之一例的各步驟之剖視圖。 2(a) to 2(c) are cross-sectional views for explaining respective steps of an example of a method of manufacturing a bonded structure using a conductive paste according to an embodiment of the present invention.
圖3係表示連接構造體之變化例之剖視圖。 Fig. 3 is a cross-sectional view showing a variation of the connection structure.
圖4係表示連接構造體之變化例之剖視圖。 Fig. 4 is a cross-sectional view showing a variation of the connection structure.
以下,對本發明之詳細內容進行說明。 Hereinafter, the details of the present invention will be described.
(導電糊) (conductive paste)
本發明之導電糊係用以將表面具有第1電極之第1連接對象構件 與表面具有第2電極之第2連接對象構件進行連接而使上述第1電極與上述第2電極電性連接。本發明之導電糊包含:熱硬化性成分、複數個焊料粒子、及熔點為250℃以上之複數個間隔物。 The conductive paste of the present invention is for using the first connection member having the first electrode on the surface The second connection target member having the second electrode on the surface thereof is connected to electrically connect the first electrode and the second electrode. The conductive paste of the present invention comprises a thermosetting component, a plurality of solder particles, and a plurality of spacers having a melting point of 250 ° C or higher.
於本發明之導電糊中,上述間隔物之平均粒徑大於上述焊料粒子之平均粒徑。 In the conductive paste of the present invention, the average particle diameter of the spacer is larger than the average particle diameter of the solder particles.
本發明之導電糊因採用上述之構成,故而於將電極間電性連接之情形時,可高精度地控制電極間之間隔。進而於焊料粒子於電極間凝聚時,藉由間隔物而充分確保上下之電極之間隔,因此複數個焊料粒子容易於上下對向之電極間凝聚,而可有效率地將複數個焊料粒子配置於電極(線)上。又,難以將複數個焊料粒子之一部分配置於未形成電極之區域(間隙),而可使配置於未形成電極之區域之焊料粒子之量大幅減少。因此,可提高電極間之導通可靠性。而且,可防止不可連接之橫方向上鄰接之電極間之電性連接,而可提高絕緣可靠性。於本發明中,可藉由調配間隔物而有效率地將焊料粒子配置於電極上。進而,於本發明中,不僅單獨調配間隔物,亦將間隔物與焊料粒子之平均粒徑設定為特定範圍內,因此可有效率地將焊料粒子配置於電極上。具有特定平均粒徑之間隔物之使用係對提高應連接之上下電極間之焊料量及配置精度有較大幫助。 Since the conductive paste of the present invention has the above configuration, when the electrodes are electrically connected to each other, the interval between the electrodes can be controlled with high precision. Further, when the solder particles are aggregated between the electrodes, the gap between the upper and lower electrodes is sufficiently ensured by the spacers. Therefore, a plurality of solder particles are easily aggregated between the electrodes facing each other, and a plurality of solder particles can be efficiently disposed. On the electrode (line). Further, it is difficult to arrange one of the plurality of solder particles in a region (gap) in which the electrode is not formed, and the amount of the solder particles disposed in the region where the electrode is not formed can be greatly reduced. Therefore, the conduction reliability between the electrodes can be improved. Further, it is possible to prevent electrical connection between adjacent electrodes which are not connectable in the lateral direction, and it is possible to improve insulation reliability. In the present invention, the solder particles can be efficiently disposed on the electrodes by blending the spacers. Further, in the present invention, not only the spacers but also the average particle diameter of the spacers and the solder particles are set within a specific range, so that the solder particles can be efficiently disposed on the electrodes. The use of spacers having a specific average particle size greatly contributes to the improvement of the amount of solder and the accuracy of placement between the upper and lower electrodes to be connected.
由於上述間隔物之平均粒徑大於上述焊料粒子之平均粒徑,故而於焊料粒子於電極上移動時,於第1連接對象構件與第2連接對象構件之間焊料粒子可移動之間隔得以確保,而促進焊料粒子之移動。作為結果,配置於上下電極間之焊料量變多,因此電極間之導通可靠性變高。 Since the average particle diameter of the spacer is larger than the average particle diameter of the solder particles, when the solder particles move on the electrode, the interval at which the solder particles can move between the first connection member and the second connection member is ensured. It promotes the movement of solder particles. As a result, since the amount of solder disposed between the upper and lower electrodes increases, the conduction reliability between the electrodes becomes high.
又,於本發明中,發現藉由使用間隔物,間隔物不僅控制上下之電極之間隔,間隔物亦有助於提高焊料粒子之凝聚性。 Further, in the present invention, it has been found that by using a spacer, the spacer not only controls the interval between the upper and lower electrodes, but also contributes to the improvement of the cohesiveness of the solder particles.
進而,本發明可防止電極間之位置偏移。對於本發明而言,於 塗佈有導電糊之第1連接對象構件上重合第2連接對象構件時,即便於第1連接對象構件之電極與第2連接對象構件之電極之對位發生偏移的狀態下,將第1連接對象構件與第2連接對象構件重合之情形時,亦可修正上述偏移,而使第1連接對象構件之電極與第2連接對象構件之電極連接(自動對準效果)。 Further, the present invention can prevent positional displacement between electrodes. For the purposes of the present invention, When the second connection target member is superposed on the first connection target member to which the conductive paste is applied, the first position is shifted even when the alignment between the electrode of the first connection target member and the electrode of the second connection target member is shifted. When the connection target member and the second connection target member are overlapped, the offset may be corrected, and the electrode of the first connection target member may be connected to the electrode of the second connection target member (automatic alignment effect).
再者,於並非上述焊料粒子,而是使用包括並非由焊料形成之基材粒子與配置於基材粒子之表面上之焊料層的導電性粒子之情形時,於電極上導電性粒子變得難以凝聚,而導電性粒子彼此之焊料接合性較低,因此於電極上移動之導電性粒子變得容易向電極外移動。因此,電極間之位置偏移之抑制效果亦變低。 Further, when the conductive particles including the substrate particles not formed of the solder and the solder layer disposed on the surface of the substrate particles are used instead of the solder particles, the conductive particles become difficult on the electrode. Since the conductive particles are low in solder joint property, the conductive particles moving on the electrode are easily moved outside the electrode. Therefore, the suppression effect of the positional shift between the electrodes also becomes low.
為了進一步有效率地將焊料粒子配置於電極上,上述導電糊之於25℃下之黏度(η25)較佳為10Pa‧s以上,更佳為50Pa‧s以上,進而較佳為100Pa‧s以上,且較佳為800Pa‧s以下,更佳為600Pa‧s以下,進而較佳為500Pa‧s以下。 In order to further efficiently dispose the solder particles on the electrode, the viscosity (η25) of the conductive paste at 25 ° C is preferably 10 Pa ‧ or more, more preferably 50 Pa ‧ or more, and still more preferably 100 Pa ‧ or more Preferably, it is 800 Pa‧s or less, more preferably 600 Pa‧s or less, further preferably 500 Pa‧s or less.
上述黏度(η25)可視調配成分之種類及調配量而適當進行調整。又,藉由使用填料,而可相對提高黏度。 The viscosity (η25) can be appropriately adjusted depending on the type of the blending component and the blending amount. Moreover, by using a filler, the viscosity can be relatively increased.
上述黏度(η25)例如可使用E型黏度計(東機產業公司製造)等,於25℃及5rpm之條件下進行測定。 The viscosity (η25) can be measured, for example, at 25 ° C and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).
本發明之導電糊可較佳地用於下述之本發明之連接構造體及連接構造體之製造方法。 The conductive paste of the present invention can be preferably used in the connection structure of the present invention and the method of producing the connection structure described below.
就進一步提高導通可靠性之觀點而言,上述導電糊較佳為於將上述第1電極與上述第2電極電性連接時,加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,使複數個上述焊料粒子凝聚而一體化後使用。藉由複數個焊料粒子之一體化,而形成更大面積之焊料部。於1個焊料部中,較佳為導電糊中之2個以上之焊料粒子一體化,更佳為導電糊中之3個以上之焊料粒子一體化,進而較佳為導 電糊中之5個以上之焊料粒子一體化。 In view of further improving the conduction reliability, the conductive paste is preferably heated to a temperature equal to or higher than a melting point of the solder particles and a hardening temperature of the thermosetting component when the first electrode and the second electrode are electrically connected to each other. As described above, a plurality of the above-described solder particles are aggregated and integrated for use. A larger area of the solder portion is formed by the integration of a plurality of solder particles. In one solder portion, it is preferable that two or more solder particles in the conductive paste are integrated, and it is more preferable that three or more solder particles in the conductive paste are integrated, and further preferably Five or more solder particles in the electric paste are integrated.
上述導電糊可較佳地用於電極之電性連接。上述導電糊較佳為電路連接材料。 The above conductive paste can be preferably used for electrical connection of electrodes. The above conductive paste is preferably a circuit connecting material.
以下,對上述導電糊所包含之各成分進行說明。 Hereinafter, each component contained in the above-mentioned conductive paste will be described.
(焊料粒子) (solder particles)
上述焊料粒子係於導電性之外表面具有焊料。上述焊料粒子係中心部分及導電性之外表面均由焊料形成。上述焊料粒子係上述焊料粒子之中心部分及導電性之外表面均為焊料之粒子。 The solder particles have solder on the surface other than the conductive layer. The solder particle center portion and the conductive outer surface are each formed of solder. The solder particles are the central portion of the solder particles and the outer surface of the conductive particles are solder particles.
就於電極上使焊料粒子有效率地凝聚之觀點而言,較佳為上述焊料粒子之表面之ζ電位為正。但是,於本發明中,上述焊料粒子之表面之ζ電位亦可不為正。 From the viewpoint of efficiently agglomerating the solder particles on the electrode, it is preferable that the zeta potential of the surface of the solder particle is positive. However, in the present invention, the zeta potential of the surface of the solder particles may not be positive.
ζ電位可以下述方式進行測定。 The zeta potential can be measured in the following manner.
ζ電位之測定方法: Determination of zeta potential:
將焊料粒子0.05g放入甲醇10g中,進行超音波處理等,藉此使焊料粒子均勻地分散而獲得分散液。可使用該分散液,且使用Beckman Coulter公司製造之「Delsamax PRO」,利用電泳測定法,於23℃下測定ζ電位。 0.05 g of the solder particles was placed in 10 g of methanol, and ultrasonic treatment or the like was performed to uniformly disperse the solder particles to obtain a dispersion liquid. This dispersion can be used, and the zeta potential is measured at 23 ° C by an electrophoresis method using "Delsamax PRO" manufactured by Beckman Coulter.
焊料粒子之ζ電位較佳為0mV以上,更佳為超過0mV,且較佳為10mV以下,更佳為5mV以下,進而較佳為1mV以下,進而更佳為0.7mV以下,尤佳為0.5mV以下。若ζ電位為上述上限以下,則於使用前之導電糊中,焊料粒子變得難以凝聚。若ζ電位為0mV以上,則安裝時於電極上焊料粒子有效率地凝聚。 The zeta potential of the solder particles is preferably 0 mV or more, more preferably more than 0 mV, and more preferably 10 mV or less, more preferably 5 mV or less, further preferably 1 mV or less, further preferably 0.7 mV or less, and particularly preferably 0.5 mV. the following. When the zeta potential is less than or equal to the above upper limit, the solder particles become difficult to aggregate in the conductive paste before use. When the zeta potential is 0 mV or more, the solder particles are efficiently aggregated on the electrode during mounting.
就容易使表面之ζ電位為正之方面而言,上述焊料粒子較佳為具有:焊料粒子本體、與配置於上述焊料粒子本體之表面上之陰離子聚合物。上述焊料粒子較佳為藉由利用陰離子聚合物或成為陰離子聚合物之化合物對焊料粒子本體進行表面處理而獲得。上述焊料粒子較佳 為利用陰離子聚合物或成為陰離子聚合物之化合物之表面處理物。上述陰離子聚合物及上述成為陰離子聚合物之化合物可分別僅使用1種,亦可併用2種以上。 In order to make the zeta potential of the surface positive, the solder particles preferably have a solder particle body and an anionic polymer disposed on the surface of the solder particle body. The solder particles are preferably obtained by surface-treating the solder particles by using an anionic polymer or a compound which is an anionic polymer. The above solder particles are preferably It is a surface treatment of an anionic polymer or a compound which becomes an anionic polymer. The above-mentioned anionic polymer and the above-mentioned compound which becomes an anionic polymer may be used alone or in combination of two or more.
作為利用陰離子聚合物對焊料粒子本體進行表面處理之方法,可列舉如下方法:例如使用使(甲基)丙烯酸共聚合而成之(甲基)丙烯酸系聚合物、由二羧酸與二醇合成且兩末端具有羧基之聚酯聚合物、藉由二羧酸之分子間脫水縮合反應而獲得且兩末端具有羧基之聚合物、由二羧酸與二胺合成且兩末端具有羧基之聚酯聚合物、以及具有羧基之改性聚乙烯醇(日本合成化學公司製造之「GOHSENX T」)等作為陰離子聚合物,使陰離子聚合物之羧基、與焊料粒子本體之表面之羥基進行反應。 As a method of surface-treating a solder particle body by an anionic polymer, the method of synthesizing a (meth)acrylic- And a polyester polymer having a carboxyl group at both ends, a polymer obtained by intermolecular dehydration condensation reaction of a dicarboxylic acid and having a carboxyl group at both terminals, a polyester synthesized from a dicarboxylic acid and a diamine and having a carboxyl group at both terminals As an anionic polymer, a modified polyvinyl alcohol having a carboxyl group ("GOHSENX T" manufactured by Nippon Synthetic Chemical Co., Ltd.) or the like is used to react a carboxyl group of the anionic polymer with a hydroxyl group on the surface of the solder particle body.
作為上述陰離子聚合物之陰離子部分,可列舉上述羧基,除此以外,可列舉:甲苯磺醯基(p-H3CC6H4S(=O)2-)、磺酸根離子基(-SO3 -)、及磷酸根離子基(-PO4 -)等。 Examples of the anion portion of the anionic polymer include the above-mentioned carboxyl group, and examples thereof include a toluenesulfonyl group (pH 3 CC 6 H 4 S(=O) 2 -) and a sulfonate ion group (-SO 3 -). ), and a phosphate ion group (-PO 4 - ).
又,作為其他方法,可列舉如下方法:使用具有與焊料粒子本體之表面之羥基進行反應之官能基,進而具有可藉由加成、縮合反應而進行聚合之官能基之化合物,使該化合物於焊料粒子本體之表面上進行聚合物化。作為與焊料粒子本體之表面之羥基進行反應之官能基,可列舉:羧基、及異氰酸酯基等,作為藉由加成、縮合反應而進行聚合之官能基,可列舉:羥基、羧基、胺基、及(甲基)丙烯醯基。 Moreover, as another method, a method of using a functional group having a functional group reactive with a hydroxyl group on the surface of the solder particle main body and further having a functional group capable of being polymerized by addition or condensation reaction is used, and the compound is used. Polymerization is carried out on the surface of the solder particle body. Examples of the functional group that reacts with the hydroxyl group on the surface of the main body of the solder particles include a carboxyl group and an isocyanate group. Examples of the functional group to be polymerized by addition or condensation reaction include a hydroxyl group, a carboxyl group, and an amine group. And (meth) acrylonitrile.
上述陰離子聚合物之重量平均分子量較佳為2000以上,更佳為3000以上,且較佳為10000以下,更佳為8000以下。 The weight average molecular weight of the above anionic polymer is preferably 2,000 or more, more preferably 3,000 or more, and is preferably 10,000 or less, more preferably 8,000 or less.
若上述重量平均分子量為上述下限以上及上述上限以下,則容易於焊料粒子本體之表面上配置陰離子聚合物,而容易使焊料粒子之表面之ζ電位為正,而可進一步有效率地於電極上配置焊料粒子。 When the weight average molecular weight is at least the above lower limit and not more than the above upper limit, the anionic polymer is easily disposed on the surface of the solder particle body, and the zeta potential of the surface of the solder particles is easily made positive, and the electrode can be further efficiently applied to the electrode. Configure solder particles.
上述重量平均分子量係表示藉由凝膠滲透層析法(GPC)而測得之 以聚苯乙烯換算計之重量平均分子量。 The above weight average molecular weight is measured by gel permeation chromatography (GPC). The weight average molecular weight in terms of polystyrene.
藉由利用成為陰離子聚合物之化合物對焊料粒子本體進行表面處理而獲得之聚合物的重量平均分子量可藉由如下方式求出:使焊料粒子中之焊料溶解,藉由不會引起聚合物之分解之稀鹽酸等將焊料粒,子去除後,對殘留之聚合物之重量平均分子量進行測定。 The weight average molecular weight of the polymer obtained by surface-treating the solder particle body by using a compound which becomes an anionic polymer can be obtained by dissolving the solder in the solder particles without causing decomposition of the polymer. After the solder particles are removed by dilute hydrochloric acid or the like, the weight average molecular weight of the remaining polymer is measured.
上述焊料較佳為熔點為450℃以下之金屬(低熔點金屬)。上述焊料粒子較佳為熔點為450℃以下之金屬粒子(低熔點金屬粒子)。上述低熔點金屬粒子係包含低熔點金屬之粒子。該所謂低熔點金屬,係表示熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述焊料粒子包含錫。上述焊料粒子所包含之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述焊料粒子中之錫之含量為上述下限以上,則焊料部與電極之連接可靠性進一步變高。 The above solder is preferably a metal having a melting point of 450 ° C or less (low melting point metal). The solder particles are preferably metal particles (low melting point metal particles) having a melting point of 450 ° C or lower. The low melting point metal particles are particles containing a low melting point metal. The low melting point metal is a metal having a melting point of 450 ° C or lower. The melting point of the low melting point metal is preferably 300 ° C or lower, more preferably 160 ° C or lower. Further, the solder particles contain tin. The content of tin in 100% by weight of the metal contained in the solder particles is preferably 30% by weight or more, more preferably 40% by weight or more, still more preferably 70% by weight or more, and particularly preferably 90% by weight or more. When the content of tin in the solder particles is at least the above lower limit, the connection reliability between the solder portion and the electrode is further increased.
再者,上述錫之含量可使用高頻電感耦合電漿發射光譜分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島津製作所公司製造之「EDX-800HS」)等而進行測定。 In addition, the high-frequency inductively coupled plasma emission spectrometer ("ICP-AES" manufactured by Horiba, Ltd.) or the fluorescent X-ray analyzer (EDX-800HS manufactured by Shimadzu Corporation) can be used. And the measurement is performed.
藉由使用上述焊料粒子,焊料熔融而接合於電極,從而焊料部使電極間導通。例如焊料部與電極容易面接觸而並非點接觸,因此連接電阻變低。又,藉由使用焊料粒子,焊料部與電極之接合強度變高,結果焊料部與電極之剝離變得進一步難以產生,而導通可靠性及連接可靠性有效地變高。 By using the above-described solder particles, the solder is melted and bonded to the electrodes, so that the solder portions electrically conduct the electrodes. For example, since the solder portion and the electrode are easily in surface contact and are not in point contact, the connection resistance is lowered. Moreover, by using the solder particles, the bonding strength between the solder portion and the electrode is increased, and as a result, the peeling of the solder portion and the electrode is further prevented from occurring, and the conduction reliability and the connection reliability are effectively increased.
構成上述焊料粒子之金屬(低熔點金屬)並無特別限定。該低熔點金屬較佳為錫、或包含錫之合金。該合金可列舉:錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。就對電極之潤濕性優異之方面而言,上述低熔點金屬較佳為錫、錫-銀合 金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 The metal (low melting point metal) constituting the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include a tin-silver alloy, a tin-copper alloy, a tin-silver-copper alloy, a tin-bismuth alloy, a tin-zinc alloy, and a tin-indium alloy. In terms of excellent wettability to the electrode, the low melting point metal is preferably tin, tin-silver. Gold, tin-silver-copper alloy, tin-bismuth alloy, tin-indium alloy. More preferably, it is a tin-bismuth alloy or a tin-indium alloy.
上述焊料粒子較佳為基於JIS Z3001:焊接用語,液相線為450℃以下之焊接填充材料(filler material)。作為上述焊料粒子之組成,例如可列舉:包含鋅、金、銀、鉛、銅、錫、鉍、銦等之金屬組成。較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料粒子較佳為不包含鉛,且較佳為包含錫與銦,或包含錫與鉍。 The solder particles are preferably a weld filler material having a liquidus of 450 ° C or less based on JIS Z3001: welding term. Examples of the composition of the solder particles include a metal composition containing zinc, gold, silver, lead, copper, tin, antimony, indium, or the like. A tin-indium system (117 ° C eutectic) or a tin-lanthanide (139 ° C eutectic) having a low melting point and no lead is preferable. That is, the solder particles preferably do not contain lead, and preferably contain tin and indium, or contain tin and antimony.
為了進一步提高上述焊料部與電極之接合強度,上述焊料粒子亦可包含鎳、銅、銻、鋁、鋅、鉄、金、鈦、磷、鍺、碲、鈷、鉍、錳、鉻、鉬、鈀等金屬。又,就進一步提高焊料部與電極之接合強度之觀點而言,上述焊料粒子較佳為包含鎳、銅、銻、鋁或鋅。就進一步提高焊料部與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於焊料粒子100重量%中,較佳為0.0001重量%以上,較佳為1重量%以下。 In order to further improve the bonding strength between the solder portion and the electrode, the solder particles may further comprise nickel, copper, lanthanum, aluminum, zinc, lanthanum, gold, titanium, phosphorus, lanthanum, cerium, cobalt, lanthanum, manganese, chromium, molybdenum, Metal such as palladium. Further, from the viewpoint of further improving the bonding strength between the solder portion and the electrode, the solder particles preferably contain nickel, copper, ruthenium, aluminum or zinc. From the viewpoint of further improving the bonding strength between the solder portion and the electrode, the content of the metal for improving the bonding strength is preferably 0.0001% by weight or more, preferably 1% by weight or less, based on 100% by weight of the solder particles.
上述焊料粒子之平均粒徑較佳為0.5μm以上,更佳為1μm以上,進而較佳為3μm以上,尤佳為5μm以上,且較佳為100μm以下,更佳為未達80μm,進而更佳為75μm以下,進而更佳為60μm以下,進而更佳為40μm以下,進而更佳為30μm以下,進而更佳為20μm以下,尤佳為15μm以下,最佳為10μm以下。若上述焊料粒子之平均粒徑為上述下限以上及上述上限以下,則可進一步有效率地將焊料粒子配置於電極上。上述焊料粒子之平均粒徑尤佳為3μm以上且30μm以下。 The average particle diameter of the solder particles is preferably 0.5 μm or more, more preferably 1 μm or more, further preferably 3 μm or more, particularly preferably 5 μm or more, and preferably 100 μm or less, more preferably less than 80 μm, and thus more preferably It is 75 μm or less, more preferably 60 μm or less, still more preferably 40 μm or less, still more preferably 30 μm or less, still more preferably 20 μm or less, still more preferably 15 μm or less, and most preferably 10 μm or less. When the average particle diameter of the solder particles is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode. The average particle diameter of the solder particles is preferably 3 μm or more and 30 μm or less.
上述焊料粒子之「平均粒徑」係表示數量平均粒徑。關於焊料粒子之平均粒徑,例如利用電子顯微鏡或光學顯微鏡對任意50個焊料粒子進行觀察而算出平均值;或進行雷射繞射式粒度分佈測定而求 出。 The "average particle diameter" of the above solder particles means a number average particle diameter. Regarding the average particle diameter of the solder particles, for example, an arbitrary value is obtained by observing any 50 solder particles by an electron microscope or an optical microscope, or by performing laser diffraction type particle size distribution measurement. Out.
上述焊料粒子之粒徑之變異係數較佳為5%以上,更佳為10%以上,且較佳為40%以下,更佳為30%以下。若上述粒徑之變異係數為上述下限以上及上述上限以下,則可進一步有效率地將焊料粒子配置於電極上。但是,上述焊料粒子之粒徑之變異係數亦可未達5%。 The coefficient of variation of the particle diameter of the solder particles is preferably 5% or more, more preferably 10% or more, and is preferably 40% or less, more preferably 30% or less. When the coefficient of variation of the particle diameter is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode. However, the coefficient of variation of the particle diameter of the above solder particles may be less than 5%.
上述變異係數(CV值)係由下述式表示。 The above coefficient of variation (CV value) is represented by the following formula.
CV值(%)=(ρ/Dn)×100 CV value (%) = (ρ / Dn) × 100
ρ:焊料粒子之粒徑之標準偏差 ρ: standard deviation of the particle size of the solder particles
Dn:焊料粒子之粒徑之平均值 Dn: average of the particle size of the solder particles
上述焊料粒子之形狀並無特別限定。上述焊料粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。 The shape of the solder particles is not particularly limited. The shape of the solder particles may be spherical or may be a shape other than a spherical shape such as a flat shape.
上述導電糊100重量%中,上述焊料粒子之含量較佳為1重量%以上,更佳為2重量%以上,進而較佳為10重量%以上,尤佳為20重量%以上,最佳為30重量%以上,且較佳為80重量%以下,更佳為60重量%以下,進而較佳為50重量%以下。若上述焊料粒子之含量為上述下限以上及上述上限以下,則可進一步有效率地將焊料粒子配置於電極上,而容易於電極間配置較多之焊料粒子,而導通可靠性進一步變高。就進一步提高導通可靠性之觀點而言,較佳為上述焊料粒子之含量較多。 The content of the solder particles in 100% by weight of the conductive paste is preferably 1% by weight or more, more preferably 2% by weight or more, still more preferably 10% by weight or more, still more preferably 20% by weight or more, and most preferably 30% by weight. The weight% or more is preferably 80% by weight or less, more preferably 60% by weight or less, still more preferably 50% by weight or less. When the content of the solder particles is not less than the above lower limit and not more than the above upper limit, the solder particles can be more efficiently disposed on the electrode, and a large amount of solder particles are easily disposed between the electrodes, and the conduction reliability is further increased. From the viewpoint of further improving the conduction reliability, it is preferred that the content of the solder particles is large.
於形成有電極之部分之線(L)為50μm以上且未達150μm之情形時,就進一步提高導通可靠性之觀點而言,上述導電糊100重量%中,上述焊料粒子之含量較佳為20重量%以上,更佳為30重量%以上,且較佳為55重量%以下,更佳為45重量%以下。 When the line (L) in which the electrode is formed is 50 μm or more and less than 150 μm, the content of the solder particles is preferably 20% by weight of the conductive paste 100% by weight. The weight% or more is more preferably 30% by weight or more, and is preferably 55% by weight or less, more preferably 45% by weight or less.
於未形成電極之部分之間隙(S)為50μm以上且未達150μm之情形時,就進一步提高導通可靠性之觀點而言,上述導電糊100重量%中,上述焊料粒子之含量較佳為30重量%以上,更佳為40重量%以 上,且較佳為70重量%以下,更佳為60重量%以下。 When the gap (S) of the portion where the electrode is not formed is 50 μm or more and less than 150 μm, the content of the solder particles is preferably 30% by weight of the conductive paste 100% by weight. More than weight%, more preferably 40% by weight The upper portion is preferably 70% by weight or less, more preferably 60% by weight or less.
於形成有電極之部分之線(L)為150μm以上且未達1000μm之情形時,就進一步提高導通可靠性之觀點而言,上述導電糊100重量%中,上述焊料粒子之含量較佳為30重量%以上,更佳為40重量%以上,且較佳為70重量%以下,更佳為60重量%以下。 When the line (L) where the electrode is formed is 150 μm or more and less than 1000 μm, the content of the solder particles is preferably 30% by weight of the conductive paste 100% by weight. The weight% or more is more preferably 40% by weight or more, and is preferably 70% by weight or less, more preferably 60% by weight or less.
於未形成電極之部分之間隙(S)為150μm以上且未達1000μm之情形時,就進一步提高導通可靠性之觀點而言,上述導電糊100重量%中,上述焊料粒子之含量較佳為30重量%以上,更佳為40重量%以上,且較佳為70重量%以下,更佳為60重量%以下。 When the gap (S) of the portion where the electrode is not formed is 150 μm or more and less than 1000 μm, the content of the solder particles is preferably 30% in 100% by weight of the conductive paste. The weight% or more is more preferably 40% by weight or more, and is preferably 70% by weight or less, more preferably 60% by weight or less.
(間隔物) (spacer)
上述間隔物可以接觸於上述第1連接對象構件與上述第2連接對象構件兩者之方式較佳地使用。因此,本發明之導電糊可將上述間隔物以接觸於上述第1連接對象構件與上述第2連接對象構件兩者之方式較佳地使用。上述間隔物可以接觸於上述第1連接對象構件之上述第1電極(設置有上述第1電極之區域)與上述第2連接對象構件之上述第2電極(設置有上述第2電極之區域)兩者之方式較佳地使用。上述間隔物亦可以接觸於上述第1連接對象構件之未設置上述第1電極之區域與上述第2連接對象構件之未設置上述第2電極之區域兩者之方式較佳地使用。由於導電連接時焊料欲於電極間凝聚之作用,而間隔物容易向未設置電極之區域移動。另一方面,存在上述間隔物配置於電極間之情況。 The spacer may be preferably used in such a manner as to be in contact with both the first connection member and the second connection member. Therefore, the conductive paste of the present invention can be preferably used in such a manner that the spacer is in contact with both the first connection target member and the second connection target member. The spacer may be in contact with the first electrode (the region in which the first electrode is provided) of the first connection member and the second electrode (the region in which the second electrode is provided) of the second connection member The method is preferably used. The spacer may be preferably used in contact with both the region where the first electrode is not provided and the region where the second electrode is not provided in the second connection member. Since the solder is intended to agglomerate between the electrodes during the conductive connection, the spacer is likely to move to the region where the electrode is not provided. On the other hand, there is a case where the spacer is disposed between the electrodes.
上述間隔物之熔點為250℃以上。為了於第1電極與第2電極之電性連接時,上述間隔物不會熔融而較高地設定熔點。上述間隔物之熔點之上限並無特別限定。上述間隔物之熔點亦可為400℃以下。 The above separator has a melting point of 250 ° C or higher. In order to electrically connect the first electrode and the second electrode, the spacer is not melted and the melting point is set high. The upper limit of the melting point of the above spacer is not particularly limited. The above-mentioned spacer may have a melting point of 400 ° C or less.
就進一步防止間隔物之熔融之觀點而言,上述間隔物之熔點較佳為300℃以上,更佳為350℃以上。 The melting point of the spacer is preferably 300 ° C or higher, more preferably 350 ° C or higher, from the viewpoint of further preventing melting of the spacer.
上述間隔物亦可為樹脂粒子。作為樹脂粒子之材料,例如可列舉:聚烯烴樹脂、丙烯酸系樹脂、酚樹脂、三聚氰胺樹脂、苯胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚對苯二甲酸乙二酯、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、二乙烯苯聚合物、及乙烯苯-苯乙烯共聚物或二乙烯苯-(甲基)丙烯酸酯共聚物等二乙烯苯系共聚物等。因可容易地將上述樹脂粒子之硬度控制為較佳範圍內,故而上述樹脂粒子之材料較佳為使具有乙烯性不飽和基之聚合性單體1種或2種以上聚合而成之聚合物。尤其是二乙烯苯聚合物、聚醯亞胺或聚醯胺醯亞胺較佳。 The spacer may also be a resin particle. Examples of the material of the resin particles include a polyolefin resin, an acrylic resin, a phenol resin, a melamine resin, a benzoguanamine resin, a urea resin, an epoxy resin, an unsaturated polyester resin, a saturated polyester resin, and a polyparaphenylene. Ethylene dicarboxylate, polyfluorene, polyphenylene ether, polyacetal, polyimide, polyamidoximine, polyetheretherketone, polyether oxime, divinylbenzene polymer, and ethylene benzene-styrene A copolymer or a divinylbenzene copolymer such as a divinylbenzene-(meth)acrylate copolymer. Since the hardness of the resin particles can be easily controlled to a preferred range, the material of the resin particles is preferably a polymer obtained by polymerizing one or more polymerizable monomers having an ethylenically unsaturated group. . In particular, a divinylbenzene polymer, a polyimine or a polyamidimide is preferred.
又,作為上述間隔物之材料,除樹脂外,亦可列舉:二氧化矽、玻璃、石英、聚矽氧、金屬、及金屬氧化物等。上述間隔物之材料亦可並非金屬。上述間隔物之材料較佳為樹脂,更佳為二乙烯苯系共聚物。上述二乙烯苯系共聚物例如包含二乙烯苯作為共聚合成分。 Further, as the material of the spacer, in addition to the resin, cerium oxide, glass, quartz, polyfluorene oxide, metal, metal oxide or the like may be mentioned. The material of the spacer may also be not a metal. The material of the spacer is preferably a resin, more preferably a divinylbenzene copolymer. The divinylbenzene-based copolymer contains, for example, divinylbenzene as a copolymerization component.
因存在將間隔物配置於橫方向上鄰接之電極間之情況,故而就進一步提高絕緣可靠性之觀點而言,上述間隔物較佳為絕緣性粒子。 Since the spacers are disposed between the adjacent electrodes in the lateral direction, the spacers are preferably insulating particles from the viewpoint of further improving the insulation reliability.
上述間隔物之平均粒徑較佳為10μm以上,更佳為20μm以上,進而較佳為25μm以上,且較佳為100μm以下,更佳為75μm以下,進而更佳為50μm以下。若上述間隔物之平均粒徑為上述下限以上及上述上限以下,則可進一步高精度地控制電極間之間隔,而可進一步有效率地將焊料粒子配置於電極上。 The average particle diameter of the spacer is preferably 10 μm or more, more preferably 20 μm or more, further preferably 25 μm or more, and more preferably 100 μm or less, more preferably 75 μm or less, and still more preferably 50 μm or less. When the average particle diameter of the spacer is not less than the above lower limit and not more than the above upper limit, the interval between the electrodes can be controlled with higher precision, and the solder particles can be more efficiently disposed on the electrode.
上述間隔物之「平均粒徑」係表示數量平均粒徑。關於間隔物之平均粒徑,例如利用電子顯微鏡或光學顯微鏡對任意50個間隔物進行觀察而算出平均值;或藉由進行雷射繞射式粒度分佈測定而求出。 The "average particle diameter" of the above spacers means a number average particle diameter. The average particle diameter of the spacer is, for example, an average value calculated by observing any 50 spacers by an electron microscope or an optical microscope, or by performing laser diffraction type particle size distribution measurement.
就高精度地控制電極間,而有效率地將焊料配置於電極上之觀點而言,上述間隔物之平均粒徑大於上述焊料粒子之平均粒徑。 The average particle diameter of the spacer is larger than the average particle diameter of the solder particles from the viewpoint of efficiently controlling the electrodes and efficiently disposing the solder on the electrodes.
就進一步高精度地控制電極間,而進一步有效率地將焊料配置 於電極上之觀點而言,上述間隔物之平均粒徑相對於上述焊料粒子之平均粒徑的比(間隔物之平均粒徑/焊料粒子之平均粒徑)較佳為1.1以上,更佳為1.5以上,進而較佳為2以上,且較佳為15以下,更佳為10以下,進而較佳為8以下。就更進一步高精度地控制電極間,而更進一步有效率地將焊料配置於電極上之觀點而言,上述間隔物之平均粒徑相對於上述焊料粒子之平均粒徑的比(間隔物之平均粒徑/焊料粒子之平均粒徑)較佳為1.0以上,更佳為1.5以上,且較佳為15以下,更佳為10以下。 Further control the electrode between the electrodes with high precision, and further efficiently configure the solder From the viewpoint of the electrode, the ratio of the average particle diameter of the spacer to the average particle diameter of the solder particles (the average particle diameter of the spacer/the average particle diameter of the solder particles) is preferably 1.1 or more, more preferably 1.5 or more, further preferably 2 or more, and preferably 15 or less, more preferably 10 or less, further preferably 8 or less. The ratio of the average particle diameter of the spacer to the average particle diameter of the solder particles (the average of the spacers) from the viewpoint of further controlling the inter-electrode with high precision and further efficiently disposing the solder on the electrode The particle diameter/average particle diameter of the solder particles is preferably 1.0 or more, more preferably 1.5 or more, and is preferably 15 or less, more preferably 10 or less.
上述間隔物之粒徑之變異係數較佳為3%以上,更佳為5%以上,且較佳為30%以下,更佳為20%以下。若上述粒徑之變異係數為上述下限以上及上述上限以下,則可進一步高精度地控制電極間之間隔。 The coefficient of variation of the particle diameter of the spacer is preferably 3% or more, more preferably 5% or more, and is preferably 30% or less, more preferably 20% or less. When the coefficient of variation of the particle diameter is not less than the above lower limit and not more than the above upper limit, the interval between the electrodes can be controlled with higher precision.
上述變異係數(CV值)係由下述式表示。 The above coefficient of variation (CV value) is represented by the following formula.
CV值(%)=(ρ/Dn)×100 CV value (%) = (ρ / Dn) × 100
ρ:間隔物之粒徑之標準偏差 ρ: standard deviation of the particle size of the spacer
Dn:間隔物之粒徑之平均值 Dn: average of the particle size of the spacer
就進一步高精度地控制電極間,而進一步有效率地將焊料配置於電極上之觀點而言,上述焊料粒子之以重量%單位計之含量(導電糊100重量%中)相對於上述間隔物之以重量%單位計之含量(導電糊100重量%中)的比(焊料粒子之含量(重量%)/間隔物之含量(重量%))較佳為2以上,更佳為5以上,進而較佳為10以上,且較佳為100以下,更佳為80以下,進而較佳為70。 From the viewpoint of further accurately controlling the inter-electrode and further efficiently disposing the solder on the electrode, the content of the solder particles in the unit of weight % (in 100% by weight of the conductive paste) is relative to the spacer The ratio (content of the solder particles (% by weight) / content of the spacer (% by weight)) in terms of the content by weight % (in 100% by weight of the conductive paste) is preferably 2 or more, more preferably 5 or more, and further It is preferably 10 or more, and is preferably 100 or less, more preferably 80 or less, and still more preferably 70.
就進一步高精度地控制電極間,而進一步有效率地將焊料配置於電極上之觀點而言,上述間隔物之10%K值(壓縮10%時之壓縮彈性模數)較佳為2000N/mm2以上,更佳為3500N/mm2以上,且較佳為8000N/mm2以下,更佳為6000N/mm2以下。又,若上述間隔物之10%K值為上述下限以上及上述上限以下,則可防止間隔物接觸於第1 電極與第2電極兩者後,間隔物之過度移動,而促進焊料粒子之凝聚,而可防止第1電極與第2電極之位置偏移,從而可提高導通可靠性。 The 10% K value (compressive elastic modulus at the time of compression of 10%) of the spacer is preferably 2000 N/mm from the viewpoint of further controlling the inter-electrode with high precision and further efficiently disposing the solder on the electrode. 2 or more is more preferably 3500 N/mm 2 or more, and is preferably 8000 N/mm 2 or less, more preferably 6000 N/mm 2 or less. Further, when the 10% K value of the spacer is not less than the lower limit and not more than the upper limit, it is possible to prevent excessive movement of the spacer after the spacer contacts both the first electrode and the second electrode, thereby promoting aggregation of the solder particles. Further, the positional deviation between the first electrode and the second electrode can be prevented, and the conduction reliability can be improved.
上述間隔物之10%K值可以下述方式進行測定。 The 10% K value of the above spacer can be measured in the following manner.
使用微小壓縮試驗機,以圓柱(直徑50μm,金剛石製)之平滑壓頭端面,於25℃、歷時30秒施加最大試驗負荷90mN之條件下壓縮間隔物。測定此時之負荷值(N)及壓縮位移(mm)。可根據所獲得之測定值,藉由下述式求出壓縮彈性模數。作為上述微小壓縮試驗機,例如可使用Fischer公司製造之「Fischerscope H-100」等。 The spacer was compressed under the condition of applying a maximum test load of 90 mN at 25 ° C for 30 seconds using a small compression tester with a smooth indenter end face of a cylinder (diameter 50 μm, made of diamond). The load value (N) and the compression displacement (mm) at this time were measured. The compression elastic modulus can be obtained from the measured value obtained by the following formula. As the micro compression tester, for example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used.
K值(N/mm2)=(3/21/2)‧F‧S-3/2‧R-1/2 K value (N/mm 2 )=(3/2 1/2 )‧F‧S -3/2 ‧R -1/2
F:間隔物壓縮變形10%時之負荷值(N) F: load value at 10% compression deformation of the spacer (N)
S:間隔物壓縮變形10%時之壓縮位移(mm) S: Compression displacement (mm) when the spacer is deformed by 10%
R:間隔物之半徑(mm) R: radius of the spacer (mm)
就進一步高精度地控制電極間,而進一步有效率地將焊料配置於電極上之觀點而言,上述間隔物之壓縮恢復率較佳為30%以上,更佳為40%以上,且較佳為80%以下,更佳為70%以下。又,若上述間隔物之壓縮恢復率為上述下限以上及上述上限以下,則可防止間隔物接觸於第1電極與第2電極兩者後,間隔物之過度移動,而促進焊料粒子之凝聚,而可防止第1電極與第2電極之位置偏移,從而可提高導通可靠性。 The compression recovery ratio of the spacer is preferably 30% or more, more preferably 40% or more, and more preferably from the viewpoint of further accurately controlling the inter-electrode and further disposing the solder on the electrode. 80% or less, more preferably 70% or less. In addition, when the compression recovery ratio of the spacer is equal to or higher than the lower limit and equal to or less than the upper limit, it is possible to prevent excessive movement of the spacer after the spacer contacts both the first electrode and the second electrode, thereby promoting aggregation of the solder particles. Further, the positional deviation between the first electrode and the second electrode can be prevented, and the conduction reliability can be improved.
上述壓縮恢復率可以下述方式進行測定。 The above compression recovery rate can be measured in the following manner.
於試樣台上散佈間隔物。針對所散佈之1個間隔物,使用微小壓縮試驗機,以圓柱(直徑100μm,金剛石製)之平滑壓頭端面,於25℃下向間隔物之中心方向施加負荷(反相負荷值)直至間隔物壓縮變形40%。其後,解除負荷直至原點用負荷值(0.40mN)。可測定該期間之負荷-壓縮位移,並自下述式求出壓縮恢復率。再者,將施加負荷速 度設為0.33mN/秒。作為上述微小壓縮試驗機,例如可使用Fischer公司製造之「Fischerscope H-100」等。 Spacers are scattered on the sample stage. A small compression tester was used to apply a load (reverse load value) to the center of the spacer at 25 ° C using a small compression tester with a smooth end face of a cylinder (100 μm in diameter, made of diamond). The object is compressed and deformed by 40%. Thereafter, the load is released until the origin load value (0.40 mN). The load-compression displacement during this period can be measured, and the compression recovery rate can be obtained from the following equation. In addition, the load speed will be applied. The degree is set to 0.33 mN/sec. As the micro compression tester, for example, "Fischerscope H-100" manufactured by Fischer Co., Ltd. or the like can be used.
壓縮恢復率(%)=[(L1-L2)/L1]×100 Compression recovery rate (%) = [(L1-L2) / L1] × 100
L1:施加負荷時之自原點用負荷值直至反相負荷值之壓縮位移 L1: Compression displacement from the origin load value to the reverse phase load value when the load is applied
L2:解除負荷時之自反相負荷值直至原點用負荷值之解除負荷位移 L2: The self-reverse load value at the time of load release until the load value of the origin load is released
上述導電糊100重量%中,上述間隔物之含量較佳為0.1重量%以上,更佳為0.5重量%以上,進而較佳為1重量%以上,且較佳為10重量%以下,更佳為5重量%以下,進而較佳為4重量%以下,尤佳為3重量%以下。若上述間隔物之含量為上述下限以上及上述上限以下,則可進一步高精度地控制電極間之間隔,而可進一步有效率地將焊料粒子配置於電極上,而容易於電極間配置較多之焊料粒子,從而導通可靠性進一步變高。 The content of the spacer in 100% by weight of the conductive paste is preferably 0.1% by weight or more, more preferably 0.5% by weight or more, further preferably 1% by weight or more, and preferably 10% by weight or less, more preferably It is 5% by weight or less, more preferably 4% by weight or less, and still more preferably 3% by weight or less. When the content of the spacer is not less than the above lower limit and not more than the above upper limit, the interval between the electrodes can be controlled with higher precision, and the solder particles can be more efficiently disposed on the electrode, and the electrode can be easily disposed between the electrodes. Solder particles, so that the conduction reliability is further increased.
(熱硬化性化合物:熱硬化性成分) (thermosetting compound: thermosetting component)
上述熱硬化性化合物係可藉由加熱而硬化之化合物。作為上述熱硬化性化合物,可列舉:氧雜環丁烷化合物、環氧化合物、環硫化物化合物、(甲基)丙烯酸系化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。就使導電糊之硬化性及黏度進一步變良好,而進一步提高連接可靠性之觀點而言,較佳為環氧化合物。 The above thermosetting compound is a compound which can be hardened by heating. Examples of the thermosetting compound include an oxetane compound, an epoxy compound, an episulfide compound, a (meth)acrylic compound, a phenol compound, an amine compound, an unsaturated polyester compound, and a polyamine group. a formate compound, a polyoxymethylene compound, a polyimine compound, and the like. An epoxy compound is preferred from the viewpoint of further improving the curing property and viscosity of the conductive paste and further improving the connection reliability.
上述導電糊100重量%中,上述熱硬化性化合物之含量較佳為20重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,且較佳為99重量%以下,更佳為98重量%以下,進而較佳為90重量%以下,尤佳為80重量%以下。就進一步提高耐衝擊性之觀點而言,較佳為上述熱硬化性成分之含量較多。 The content of the thermosetting compound in the 100% by weight of the conductive paste is preferably 20% by weight or more, more preferably 40% by weight or more, further preferably 50% by weight or more, and preferably 99% by weight or less. It is preferably 98% by weight or less, more preferably 90% by weight or less, and still more preferably 80% by weight or less. From the viewpoint of further improving the impact resistance, it is preferred that the content of the thermosetting component is large.
(熱硬化劑:熱硬化性成分) (thermosetting agent: thermosetting component)
上述熱硬化劑係使上述熱硬化性化合物熱硬化。作為上述熱硬化劑,可列舉:咪唑硬化劑、胺硬化劑、酚硬化劑、多硫醇硬化劑等硫醇硬化劑、酸酐、熱陽離子起始劑(熱陽離子硬化劑)及熱自由基產生劑等。上述熱硬化劑可僅使用1種,亦可併用2種以上。 The above-mentioned thermosetting agent thermally hardens the above thermosetting compound. Examples of the above-mentioned thermosetting agent include a thiol curing agent such as an imidazole curing agent, an amine curing agent, a phenol curing agent, and a polythiol curing agent, an acid anhydride, a thermal cation initiator (thermal cation hardener), and thermal radical generation. Agents, etc. These thermosetting agents may be used alone or in combination of two or more.
咪唑硬化劑、硫醇硬化劑或胺硬化劑因可使導電糊於低溫下進一步迅速地硬化,故而較佳。又,潛伏性之硬化劑因混合可藉由加熱而硬化之硬化性化合物與上述熱硬化劑時保存穩定性變高,故而較佳。潛伏性之硬化劑較佳為潛伏性咪唑硬化劑、潛伏性硫醇硬化劑或潛伏性胺硬化劑。再者,上述熱硬化劑亦可由聚胺基甲酸酯樹脂或聚酯樹脂等高分子物質被覆。 The imidazole hardener, the thiol hardener or the amine hardener is preferred because the conductive paste can be further hardened at a low temperature. Further, it is preferable that the latent curing agent is highly stable in storage stability by mixing the curable compound which can be cured by heating and the above-mentioned thermosetting agent. The latent hardener is preferably a latent imidazole hardener, a latent thiol hardener or a latent amine hardener. Further, the thermal curing agent may be coated with a polymer material such as a polyurethane resin or a polyester resin.
作為上述咪唑硬化劑,並無特別限定,可列舉:2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-苯基咪唑鎓偏苯三酸酯、2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-對稱三及2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-對稱三異三聚氰酸加成物等。 The imidazole curing agent is not particularly limited, and examples thereof include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyanoethyl-2. -Phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-symmetric III And 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-symmetric three An isocyanuric acid addition product or the like.
作為上述硫醇硬化劑,並無特別限定,可列舉:三羥甲基丙烷三-3-巰基丙酸酯、季戊四醇四-3-巰基丙酸酯及二季戊四醇六-3-巰基丙酸酯等。 The thiol curing agent is not particularly limited, and examples thereof include trimethylolpropane tri-3-mercaptopropionate, pentaerythritol tetrakis-mercaptopropionate, and dipentaerythritol hexa-3-mercaptopropionate. .
作為上述胺硬化劑,並無特別限定,可列舉:六亞甲基二胺、八亞甲基二胺、十亞甲基二胺、3,9-雙(3-胺基丙基)-2,4,8,10-四螺[5.5]十一烷、雙(4-胺基環己基)甲烷、間苯二胺及二胺基二苯基碸等。 The amine curing agent is not particularly limited, and examples thereof include hexamethylenediamine, octamethylenediamine, decamethylenediamine, and 3,9-bis(3-aminopropyl)-2. 4,8,10-tetraspiro[5.5]undecane, bis(4-aminocyclohexyl)methane, m-phenylenediamine, and diaminodiphenylphosphonium.
作為上述熱陽離子起始劑,可列舉:錪系陽離子硬化劑、氧鎓系陽離子硬化劑及鋶系陽離子硬化劑等。作為上述錪系陽離子硬化劑,可列舉:六氟磷酸雙(4-第三丁基苯基)錪等。作為上述氧鎓系陽離子硬化劑,可列舉:四氟硼酸三甲基氧鎓等。作為上述鋶系陽離子硬化劑,可列舉:六氟磷酸三-對三鋶等。 Examples of the thermal cation initiator include a lanthanoid cation curing agent, an oxonium cation curing agent, and a lanthanoid cation curing agent. The ruthenium-based cation hardener may, for example, be bis(4-tert-butylphenyl)phosphonium hexafluorophosphate. Examples of the oxonium-based cationic curing agent include trimethyloxonium tetrafluoroborate. Examples of the ruthenium-based cationic curing agent include tri-p-triazine hexafluorophosphate and the like.
作為上述熱自由基產生劑,並無特別限定,可列舉:偶氮化合物及有機過氧化物等。作為上述偶氮化合物,可列舉:偶氮二異丁腈(AIBN)等。作為上述有機過氧化物,可列舉:過氧化二-第三丁基及過氧化甲基乙基酮等。 The thermal radical generating agent is not particularly limited, and examples thereof include an azo compound and an organic peroxide. Examples of the azo compound include azobisisobutyronitrile (AIBN). Examples of the organic peroxide include di-tert-butyl peroxide and methyl ethyl ketone peroxide.
上述熱硬化劑之反應起始溫度較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為250℃以下,更佳為200℃以下,進而較佳為150℃以下,尤佳為140℃以下。若上述熱硬化劑之反應起始溫度為上述下限以上及上述上限以下,則進一步有效率地將焊料粒子配置於電極上。上述熱硬化劑之反應起始溫度尤佳為80℃以上且140℃以下。 The reaction initiation temperature of the above-mentioned thermosetting agent is preferably 50 ° C or more, more preferably 70 ° C or more, further preferably 80 ° C or more, and preferably 250 ° C or less, more preferably 200 ° C or less, and further preferably Below 150 ° C, particularly preferably below 140 ° C. When the reaction initiation temperature of the thermal curing agent is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently disposed on the electrode. The reaction initiation temperature of the above-mentioned thermosetting agent is particularly preferably 80 ° C or more and 140 ° C or less.
就進一步有效率地將焊料配置於電極上之觀點而言,上述熱硬化劑之反應起始溫度較佳為高於上述焊料粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 The reaction initiation temperature of the thermal curing agent is preferably higher than the melting point of the solder in the solder particles, more preferably 5 ° C or higher, and further preferably from the viewpoint of further efficiently disposing the solder on the electrode. It is above 10 °C.
上述熱硬化劑之反應起始溫度意指基於DSC(Differential scanning calorimetry,示差掃描熱量測定)之發熱波峰之上升開始的溫度。 The reaction initiation temperature of the above-mentioned thermosetting agent means a temperature at which the rise of the heat generation peak based on DSC (Differential Scanning Calorimetry) starts.
上述熱硬化劑之含量並無特別限定。相對於上述熱硬化性化合物100重量份,上述熱硬化劑之含量較佳為0.01重量份以上,更佳為1重量份以上,且較佳為200重量份以下,更佳為100重量份以下,進而較佳為75重量份以下。若熱硬化劑之含量為上述下限以上,則容易使導電糊充分地硬化。若熱硬化劑之含量為上述上限以下,則硬化後未參與硬化之過量之熱硬化劑變得難以殘留,且硬化物之耐熱性進一步變高。 The content of the above-mentioned thermosetting agent is not particularly limited. The content of the above-mentioned thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, and preferably 200 parts by weight or less, more preferably 100 parts by weight or less, based on 100 parts by weight of the thermosetting compound. Further, it is preferably 75 parts by weight or less. When the content of the thermosetting agent is at least the above lower limit, the conductive paste is easily cured sufficiently. When the content of the thermal curing agent is at most the above upper limit, the excessive amount of the hard curing agent that does not participate in curing after hardening becomes difficult to remain, and the heat resistance of the cured product is further increased.
(助焊劑) (flux)
上述導電糊較佳為包含助焊劑。藉由使用助焊劑,而可進一步有效地將焊料配置於電極上。該助焊劑並無特別限定。作為助焊劑,可使用焊料接合等通常所使用之助焊劑。作為上述助焊劑,例如可列 舉:氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。上述助焊劑可僅使用1種,亦可併用2種以上。 The above conductive paste preferably contains a flux. The solder can be further effectively disposed on the electrode by using a flux. The flux is not particularly limited. As the flux, a flux which is usually used such as solder bonding can be used. As the above flux, for example, it can be listed A zinc chloride, a mixture of zinc chloride and an inorganic halide, a mixture of zinc chloride and an inorganic acid, a molten salt, a phosphoric acid, a derivative of phosphoric acid, an organic halide, a hydrazine, an organic acid, and a rosin. The flux may be used alone or in combination of two or more.
作為上述熔鹽,可列舉:氯化銨等。作為上述有機酸,可列舉:乳酸、檸檬酸、硬脂酸、麩胺酸及戊二酸等。作為上述松脂,可列舉:活性化松脂及非活性化松脂等。上述助焊劑較佳為具有2個以上之羧基之有機酸、松脂。上述助焊劑可為具有2個以上之羧基之有機酸,亦可為具有2個以上之羧基之松脂。藉由使用具有2個以上之羧基之有機酸、松脂,電極間之導通可靠性進一步變高。 Examples of the molten salt include ammonium chloride and the like. Examples of the organic acid include lactic acid, citric acid, stearic acid, glutamic acid, and glutaric acid. Examples of the rosin include activated rosin and inactivated rosin. The flux is preferably an organic acid or rosin having two or more carboxyl groups. The flux may be an organic acid having two or more carboxyl groups, or may be a rosin having two or more carboxyl groups. By using an organic acid or rosin having two or more carboxyl groups, the conduction reliability between the electrodes is further increased.
上述松脂係以松香酸為主成分之松香類。助焊劑較佳為松香類,更佳為松香酸。藉由使用該較佳之助焊劑,電極間之導通可靠性進一步變高。 The above rosin is a rosin mainly composed of rosin acid. The flux is preferably rosin, more preferably rosin acid. By using the preferred flux, the conduction reliability between the electrodes is further increased.
上述助焊劑之活性溫度(熔點)較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為200℃以下,更佳為190℃以下,進而較佳為160℃以下,進而較佳為150℃以下,進而更佳為140℃以下。若上述助焊劑之活性溫度為上述下限以上及上述上限以下,則進一步有效地發揮助焊劑效果,而進一步有效率地將焊料粒子配置於電極上。上述助焊劑之活性溫度較佳為80℃以上且190℃以下。上述助焊劑之活性溫度尤佳為80℃以上且140℃以下。 The active temperature (melting point) of the flux is preferably 50 ° C or higher, more preferably 70 ° C or higher, further preferably 80 ° C or higher, and preferably 200 ° C or lower, more preferably 190 ° C or lower, and further preferably It is 160 ° C or lower, more preferably 150 ° C or lower, and still more preferably 140 ° C or lower. When the activation temperature of the flux is not less than the above lower limit and not more than the above upper limit, the effect of the flux is further effectively exhibited, and the solder particles are more efficiently disposed on the electrode. The active temperature of the above flux is preferably 80 ° C or more and 190 ° C or less. The active temperature of the above flux is particularly preferably 80 ° C or more and 140 ° C or less.
作為熔點為80℃以上且190℃以下之上述助焊劑,可列舉:琥珀酸(熔點186℃)、戊二酸(熔點96℃)、己二酸(熔點152℃)、庚二酸(熔點104℃)、辛二酸(熔點142℃)等二羧酸、苯甲酸(熔點122℃)、蘋果酸(熔點130℃)等。 Examples of the flux having a melting point of 80 ° C or more and 190 ° C or less include succinic acid (melting point 186 ° C), glutaric acid (melting point 96 ° C), adipic acid (melting point 152 ° C), and pimelic acid (melting point 104). °C), dicarboxylic acid such as suberic acid (melting point 142 ° C), benzoic acid (melting point 122 ° C), malic acid (melting point 130 ° C) and the like.
又,上述助焊劑之沸點較佳為200℃以下。 Further, the flux has a boiling point of preferably 200 ° C or lower.
就進一步有效率地將焊料配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述焊料粒子中之焊料之熔點,更佳為高5℃以 上,進而較佳為高10℃以上。 The melting point of the flux is preferably higher than the melting point of the solder in the solder particles, more preferably 5 ° C, from the viewpoint of further efficiently disposing the solder on the electrode. Further, it is preferably 10 ° C or more higher.
就進一步有效率地將焊料配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述熱硬化劑之反應起始溫度,更佳為高5℃以上,進而較佳為高10℃以上。 The melting point of the flux is preferably higher than the reaction initiation temperature of the thermal curing agent, more preferably 5 ° C or higher, and further preferably 10 higher, from the viewpoint of further efficiently disposing the solder on the electrode. Above °C.
藉由助焊劑之熔點高於焊料之熔點,而可使焊料粒子有效率地於電極部分凝聚。其原因在於:於接合時賦予熱之情形時,將形成於連接對象構件上之電極、與電極周邊之連接對象構件之部分進行比較,電極部分之導熱率高於電極周邊之連接對象構件部分之導熱率,藉此電極部分之升溫較快。於超過焊料粒子之熔點之階段中,焊料粒子之內部熔解,但形成於表面之氧化覆膜未達到助焊劑之熔點(活性溫度),因此未被去除。於該狀態下,因電極部分之溫度先達到助焊劑之熔點(活性溫度),故而來到電極上之焊料粒子之表面之氧化覆膜優先被去除,從而焊料粒子可於電極之表面上潤濕擴散。藉此,可使焊料粒子於電極上有效率地凝聚。 The solder particles can be efficiently agglomerated at the electrode portion by the melting point of the flux being higher than the melting point of the solder. The reason for this is that when heat is applied during bonding, the electrode formed on the member to be connected is compared with the portion of the member to be connected around the electrode, and the thermal conductivity of the electrode portion is higher than that of the member to be connected around the electrode. The thermal conductivity is such that the temperature of the electrode portion is increased faster. At the stage of exceeding the melting point of the solder particles, the inside of the solder particles is melted, but the oxide film formed on the surface does not reach the melting point (active temperature) of the flux, and thus is not removed. In this state, since the temperature of the electrode portion first reaches the melting point (active temperature) of the flux, the oxide film on the surface of the solder particles on the electrode is preferentially removed, so that the solder particles can be wetted on the surface of the electrode. diffusion. Thereby, the solder particles can be efficiently aggregated on the electrode.
上述助焊劑可分散於導電糊中,亦可附著於焊料粒子之表面上。 The flux may be dispersed in the conductive paste or attached to the surface of the solder particles.
上述助焊劑較佳為藉由加熱而釋出陽離子之助焊劑。藉由使用藉由加熱而釋出陽離子之助焊劑,而可進一步有效率地將焊料粒子配置於電極上。 The flux is preferably a flux that releases cations by heating. By using a flux that releases cations by heating, the solder particles can be further efficiently disposed on the electrodes.
上述導電糊100重量%中,上述助焊劑之含量較佳為0.5重量%以上,且較佳為30重量%以下,更佳為25重量%以下。上述導電糊亦可不含有助焊劑。若助焊劑之含量為上述下限以上及上述上限以下,則變得進一步難以於焊料及電極之表面形成氧化覆膜,進而可進一步有效地將形成於焊料及電極之表面之氧化覆膜去除。 The content of the flux in 100% by weight of the conductive paste is preferably 0.5% by weight or more, and preferably 30% by weight or less, more preferably 25% by weight or less. The above conductive paste may not contain a flux. When the content of the flux is not less than the above lower limit and not more than the above upper limit, it is further difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode can be more effectively removed.
(填料) (filler)
於上述導電糊中亦可添加填料。填料可為有機填料,亦可為無 機填料。藉由添加填料,可抑制焊料粒子進行凝聚之距離,而使焊料粒子均勻地凝聚於基板之全部電極上。 A filler may also be added to the above conductive paste. The filler may be an organic filler or may be Machine packing. By adding a filler, the distance at which the solder particles are agglomerated can be suppressed, and the solder particles can be uniformly aggregated on all the electrodes of the substrate.
上述導電糊100重量%中,上述填料之含量較佳為0重量%以上,且較佳為5重量%以下,更佳為2重量%以下,進而較佳為1重量%以下。若上述填料之含量為上述下限以上及上述上限以下,則進一步有效率地將焊料粒子配置於電極上。 The content of the filler in 100% by weight of the conductive paste is preferably 0% by weight or more, more preferably 5% by weight or less, still more preferably 2% by weight or less, still more preferably 1% by weight or less. When the content of the filler is not less than the above lower limit and not more than the above upper limit, the solder particles are more efficiently disposed on the electrode.
(其他成分) (other ingredients)
上述導電糊亦可視需要而含有例如填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。 The above conductive paste may also contain, for example, a filler, a bulking agent, a softener, a plasticizer, a polymerization catalyst, a hardening catalyst, a colorant, an antioxidant, a heat stabilizer, a light stabilizer, an ultraviolet absorber, and a lubricant. Various additives such as agents, antistatic agents and flame retardants.
(連接構造體及連接構造體之製造方法) (Manufacturing method of connection structure and connection structure)
本發明之連接構造體包括:第1連接對象構件,其於表面具有至少1個第1電極;第2連接對象構件,其於表面具有至少1個第2電極;及連接部,其將上述第1連接對象構件與上述第2連接對象構件連接。於本發明之連接構造體中,上述連接部由上述之導電糊形成,係上述之導電糊之硬化物。於本發明之連接構造體中,上述連接部之材料為上述之導電糊。於本發明之連接構造體中,上述第1電極與上述第2電極藉由上述連接部中之焊料部而電性連接。上述間隔物較佳為接觸於上述第1連接對象構件與上述第2連接對象構件兩者。 The connection structure according to the present invention includes: a first connection target member having at least one first electrode on a surface thereof; a second connection target member having at least one second electrode on a surface thereof; and a connection portion that performs the above The connection object member is connected to the second connection object member. In the connection structure of the present invention, the connecting portion is formed of the above-mentioned conductive paste, and is a cured product of the above-mentioned conductive paste. In the connection structure of the present invention, the material of the connecting portion is the above-mentioned conductive paste. In the connection structure of the present invention, the first electrode and the second electrode are electrically connected by a solder portion of the connection portion. Preferably, the spacer is in contact with both the first connection target member and the second connection target member.
本發明之連接構造體之製造方法包括如下步驟:使用上述之導電糊,於表面具有至少1個第1電極之第1連接對象構件之表面上配置上述導電糊之步驟;於上述導電糊之與上述第1連接對象構件側相反之表面上,將表面具有至少1個第2電極之第2連接對象構件以上述第1電極與上述第2電極對向之方式進行配置的步驟;藉由將上述導電糊加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,而藉由上述導電糊形成將上述第1連接對象構件與上述第2連接對 象構件連接之連接部,且藉由上述連接部中之焊料部而將上述第1電極與上述第2電極電性連接之步驟。較佳為使上述間隔物接觸於上述第1連接對象構件與上述第2連接對象構件兩者。 The method for producing a connection structure according to the present invention includes the step of disposing the conductive paste on a surface of a first connection member having at least one first electrode on the surface thereof by using the conductive paste, and the conductive paste a step of arranging the second connection member having at least one second electrode on the surface opposite to the first connection target member so that the first electrode and the second electrode face each other; The conductive paste is heated to a temperature equal to or higher than a melting point of the solder particles and a hardening temperature of the thermosetting component, and the first connection member and the second connection pair are formed by the conductive paste. a step of electrically connecting the first electrode and the second electrode by a solder portion of the connecting portion. Preferably, the spacer is in contact with both the first connection target member and the second connection target member.
於本發明之連接構造體及本發明之連接構造體之製造方法中,使用有特定之導電糊,因此複數個焊料粒子容易於第1電極與第2電極之間凝聚,而可有效率地將複數個焊料粒子配置於電極(線)上。又,難以將複數個焊料粒子之一部分配置於未形成電極之區域(間隙),而可使配置於未形成電極之區域之焊料粒子之量大幅減少。因此,可提高第1電極與第2電極之間之導通可靠性。而且,可防止不可連接之橫方向上鄰接之電極間之電性連接,而可提高絕緣可靠性。 In the connection structure of the present invention and the method for producing the connection structure of the present invention, since a specific conductive paste is used, a plurality of solder particles are easily aggregated between the first electrode and the second electrode, and the electrode can be efficiently aggregated. A plurality of solder particles are disposed on the electrodes (lines). Further, it is difficult to arrange one of the plurality of solder particles in a region (gap) in which the electrode is not formed, and the amount of the solder particles disposed in the region where the electrode is not formed can be greatly reduced. Therefore, the conduction reliability between the first electrode and the second electrode can be improved. Further, it is possible to prevent electrical connection between adjacent electrodes which are not connectable in the lateral direction, and it is possible to improve insulation reliability.
就進一步提高導通可靠性之觀點而言,較佳為於將上述第1電極與上述第2電極電性連接時,加熱至上述焊料粒子之熔點以上且上述熱硬化性成分之硬化溫度以上,使複數個上述焊料粒子凝聚而一體化。 From the viewpoint of further improving the conduction reliability, when the first electrode and the second electrode are electrically connected to each other, it is preferably heated to a temperature equal to or higher than a melting point of the solder particles and a hardening temperature of the thermosetting component. A plurality of the above solder particles are aggregated and integrated.
又,本發明者發現,為了有效率地將複數個焊料粒子配置於電極上,且使配置於未形成電極之區域之焊料粒子之量大幅減少,必須使用導電糊而並非導電膜。 Moreover, the inventors of the present invention have found that in order to efficiently dispose a plurality of solder particles on an electrode and to reduce the amount of solder particles disposed in a region where no electrode is formed, it is necessary to use a conductive paste instead of a conductive film.
本發明中,亦可進而採用使複數個焊料粒子有效率地於電極間凝聚之其他方法。作為使複數個焊料粒子有效率地於電極間凝聚之方法,可列舉:向第1連接對象構件、與第2連接對象構件之間之導電糊賦予熱時,導電糊之黏度由於熱而降低,藉此使第1連接對象構件、與第2連接對象構件之間之導電糊之對流產生之方法等。於該方法中,可列舉:藉由連接對象構件之表面之電極與其以外之表面構件之熱容量的差異而使對流產生的方法;藉由熱而使連接對象構件之水分為水蒸氣而使對流產生之方法;以及藉由第1連接對象構件與第2連接對象構件之溫度差而使對流產生之方法等。藉此,可使導電糊中之焊 料粒子有效率地向電極之表面移動。 In the present invention, another method of efficiently agglomerating a plurality of solder particles between electrodes may be employed. In a method of efficiently agglomerating a plurality of solder particles between the electrodes, when the heat is applied to the conductive paste between the first connection member and the second connection member, the viscosity of the conductive paste is lowered by heat. Thereby, a method of generating convection of the conductive paste between the first connection target member and the second connection target member is performed. In the method, a method of generating convection by a difference in heat capacity between an electrode on the surface of the member to be connected and a surface member other than the surface member is used; and the convection is generated by causing the moisture of the member to be connected to be water vapor by heat. And a method of generating convection by a temperature difference between the first connection target member and the second connection target member. Thereby, the welding in the conductive paste can be obtained The particles move efficiently toward the surface of the electrode.
本發明中,亦可進而採用有選擇地使焊料粒子於電極之表面凝聚之方法。作為有選擇地使焊料粒子於電極之表面凝聚之方法,可列舉:選擇由熔融之焊料粒子之濡濕性良好之電極材質、與熔融之焊料粒子之濡濕性較差之其他表面材質形成之連接對象構件,有選擇地使到達電極之表面之熔融之焊料粒子附著於電極,使其他焊料粒子熔融並附著於該熔融之焊料粒子之方法;選擇由導熱性良好之電極材質、與導熱性較差之其他表面材質形成之連接對象構件,於賦予熱時,使電極之溫度高於其他表面構件,藉此有選擇地使焊料於電極上熔融之方法;相對於存在於由金屬形成之電極上之負的電荷,使用以具有正之電荷之方式進行過處理之焊料粒子,而有選擇地使焊料粒子於電極上凝聚之方法;以及相對於具有親水性之金屬表面之電極,將導電糊中之焊料粒子以外之樹脂設為疏水性,藉此有選擇地使焊料粒於電極上凝聚之方法等。 In the present invention, a method of selectively agglomerating solder particles on the surface of the electrode may be employed. The method of selectively agglomerating the solder particles on the surface of the electrode includes selecting an electrode member having a high wettability of the molten solder particles and a surface member formed of another surface material having poor wettability of the molten solder particles. Selectively attaching molten solder particles reaching the surface of the electrode to the electrode to melt and adhere the other solder particles to the molten solder particles; selecting an electrode material having good thermal conductivity and other surface having poor thermal conductivity a method of connecting a member to be formed by a material, wherein the temperature of the electrode is higher than that of the other surface member when heat is applied, thereby selectively melting the solder on the electrode; and a negative charge existing on the electrode formed of the metal a method of selectively agglomerating solder particles on an electrode using solder particles treated with a positive charge, and a solder particle in the conductive paste with respect to an electrode having a hydrophilic metal surface The resin is made hydrophobic, whereby a method of selectively agglomerating solder particles on an electrode or the like is provided.
電極間之焊料部之厚度較佳為10μm以上,更佳為20μm以上,且較佳為100μm以下,更佳為80μm以下。電極之表面上之焊料潤濕面積(電極所露出之面積100%中之與焊料接觸之面積)較佳為50%以上,更佳為60%以上,進而較佳為70%以上,且較佳為100%以下。 The thickness of the solder portion between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, and is preferably 100 μm or less, more preferably 80 μm or less. The solder wetted area on the surface of the electrode (the area in contact with the solder in 100% of the area exposed by the electrode) is preferably 50% or more, more preferably 60% or more, still more preferably 70% or more, and is preferably. It is 100% or less.
於本發明之連接構造體之製造方法中,較佳為於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中不進行加壓,上述第2連接對象構件之重量施加於上述導電糊,或者於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中之至少一個步驟中進行加壓,且於配置上述第2連接對象構件之步驟及形成上述連接部之步驟兩者中,加壓之壓力未達1MPa。藉由不施加1MPa以上之加壓之壓力,而相當地促進焊料粒子之凝聚。就抑制連接對象構件之翹曲之觀點而言,於本發明之連接構造體之製造方法中,亦可於配置上述第2 連接對象構件之步驟及形成上述連接部之步驟中之至少1個步驟中進行加壓,且於配置上述第2連接對象構件之步驟及形成上述連接部之步驟兩者中,加壓之壓力未達1MPa。於進行加壓之情形時,可僅於配置上述第2連接對象構件之步驟中進行加壓,亦可僅於形成上述連接部之步驟中進行加壓,亦可於配置上述第2連接對象構件之步驟與形成上述連接部之步驟兩者中進行加壓。加壓之壓力未達1MPa包含未進行加壓之情形。於進行加壓之情形時,加壓之壓力較佳為0.9MPa以下,更佳為0.8MPa以下。於加壓之壓力為0.8MPa以下之情形時,與加壓之壓力超過0.8MPa之情形相比,進一步顯著地促進焊料粒子之凝聚。 In the method of manufacturing the connection structure of the present invention, preferably, the step of arranging the second connection member and the step of forming the connection portion are not performed, and the weight of the second connection member is applied to the conductive a paste, or a step of pressurizing at least one of the step of arranging the second connection member and the step of forming the connection portion, and the step of arranging the second connection member and the step of forming the connection portion In the middle, the pressure of the pressurization is less than 1 MPa. The aggregation of the solder particles is considerably promoted by applying a pressure of pressurization of 1 MPa or more. From the viewpoint of suppressing warpage of the member to be connected, in the method of manufacturing the connection structure of the present invention, the second portion may be disposed Pressurization is performed in at least one of the step of connecting the target member and the step of forming the connecting portion, and in the step of arranging the second connecting member and the step of forming the connecting portion, the pressure of pressurization is not Up to 1MPa. In the case of pressurization, the pressurization may be performed only in the step of arranging the second connection member, or the pressurization may be performed only in the step of forming the connection portion, or the second connection member may be disposed. The step is performed in both the step of forming the above-described connecting portion. The pressure of the pressurization is less than 1 MPa, and the case where no pressurization is performed. In the case of pressurization, the pressure of pressurization is preferably 0.9 MPa or less, more preferably 0.8 MPa or less. When the pressure of the pressurization is 0.8 MPa or less, the aggregation of the solder particles is further remarkably promoted as compared with the case where the pressure of the pressurization exceeds 0.8 MPa.
於本發明之連接構造體之製造方法中,較佳為於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中不進行加壓,上述第2連接對象構件之重量施加於上述導電糊,且較佳為於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,超過上述第2連接對象構件之重量之力之加壓壓力不會施加於上述導電糊。於該等情形時,可進一步提高複數個焊料部中焊料量之均勻性。進而,可進一步有效地使焊料部之厚度變厚,複數個焊料粒子變得容易於電極間大量凝聚,而可進一步有效率地將複數個焊料粒子配置於電極(線)上。又,難以將複數個焊料粒子之一部分配置於未形成電極之區域(間隙),而可使配置於未形成電極之區域之焊料粒子之量進一步減少。因此,可進一步提高電極間之導通可靠性。而且,可進一步防止不可連接之橫方向上鄰接之電極間之電性連接,而可進一步提高絕緣可靠性。 In the method of manufacturing the connection structure of the present invention, preferably, the step of arranging the second connection member and the step of forming the connection portion are not performed, and the weight of the second connection member is applied to the conductive Preferably, in the step of arranging the second connection member and the step of forming the connection portion, a pressing pressure exceeding a weight of the second connection member is not applied to the conductive paste. In such cases, the uniformity of the amount of solder in the plurality of solder portions can be further improved. Further, the thickness of the solder portion can be further effectively increased, and a plurality of solder particles can be easily aggregated in a large amount between the electrodes, and a plurality of solder particles can be more efficiently disposed on the electrodes (wires). Further, it is difficult to arrange one of the plurality of solder particles in a region (gap) in which the electrode is not formed, and the amount of the solder particles disposed in the region where the electrode is not formed can be further reduced. Therefore, the conduction reliability between the electrodes can be further improved. Further, it is possible to further prevent electrical connection between adjacent electrodes which are not connectable in the lateral direction, and it is possible to further improve insulation reliability.
本發明者進而亦發現,若於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中不進行加壓,上述第2連接對象構件之重量施加於上述導電糊,則形成連接部前配置於未形成電極之區域(間隙) 之焊料粒子變得進一步容易於第1電極與第2電極之間凝聚,而可進一步有效率地將複數個焊料粒子配置於電極(線)上。於本發明中,為了以進一步較高之等級獲得本發明之效果,將使用導電糊而並非導電膜之構成、與不進行加壓而是上述第2連接對象構件之重量施加於上述導電糊之構成組合採用的情況存在較大意義。 Further, the inventors have found that the weight of the second connection member is applied to the conductive paste before the connection portion is formed, in the step of arranging the second connection member and the step of forming the connection portion. Configured in an area where no electrode is formed (gap) Further, the solder particles are more easily aggregated between the first electrode and the second electrode, and a plurality of solder particles can be more efficiently disposed on the electrode (line). In the present invention, in order to obtain the effect of the present invention at a higher level, a conductive paste is used instead of the conductive film, and the weight of the second connection member is applied to the conductive paste without being pressurized. The situation in which the combination is used is of great significance.
再者,於WO2008/023452A1中,記載有如下情況:就於電極表面衝擊焊料粉而使之高效率地移動之觀點而言,亦可於接著時以特定之壓力進行加壓,關於加壓壓力,記載有如下情況:就進而確實地形成焊料區域之觀點而言,例如設為0MPa以上、較佳為1MPa以上,進而記載有如下情況:即便意圖施加於接著帶之壓力為0MPa,亦可藉由配置於接著帶上之構件之自重,而對接著帶施加特定之壓力。於WO2008/023452A1中,記載有意圖施加於接著帶之壓力亦可為0MPa之情況,但關於賦予有超過0MPa之壓力之情形與設為0MPa之情形之效果差異,未作任何記載。又,於WO2008/023452A1中,關於使用糊狀之導電糊而並非膜狀之重要性,沒有任何認識。 Further, in WO 2008/023452 A1, it is described that, in view of the fact that the surface of the electrode is impacted by the solder powder and moved efficiently, it is also possible to pressurize at a specific pressure in the subsequent pressure, regarding the pressurizing pressure. In the case where the solder region is formed in a stable manner, for example, it is set to 0 MPa or more, preferably 1 MPa or more, and it is described that even if the pressure to be applied to the subsequent tape is 0 MPa, it may be borrowed. The specific pressure is applied to the subsequent belt by the weight of the member disposed on the belt. In WO 2008/023452 A1, the case where the pressure to be applied to the subsequent belt is 0 MPa is described. However, the difference in the effect of the case where the pressure exceeds 0 MPa and the case where the pressure is 0 MPa is not described. Further, in WO 2008/023452 A1, there is no knowledge about the importance of using a paste-like conductive paste instead of a film.
又,若使用導電糊而並非導電膜,則根據導電糊之塗佈量,變得容易調整連接部及焊料部之厚度。另一方面,對於導電膜而言,存在如下問題:為了變更或調整連接部之厚度,必須準備不同厚度之導電膜,或者準備特定厚度之導電膜。又,對於導電膜而言,存在如下問題:於焊料之熔融溫度下,無法使導電膜之熔融黏度充分降低,而妨礙焊料粒子之凝聚。 Further, when a conductive paste is used instead of the conductive film, the thickness of the connection portion and the solder portion can be easily adjusted according to the amount of the conductive paste applied. On the other hand, in the case of the conductive film, there is a problem in that in order to change or adjust the thickness of the connection portion, it is necessary to prepare a conductive film of a different thickness or prepare a conductive film of a specific thickness. Moreover, the conductive film has a problem that the melting viscosity of the conductive film cannot be sufficiently lowered at the melting temperature of the solder, and the aggregation of the solder particles is hindered.
以下,一面參照圖式,一面對本發明之具體實施形態進行說明。 Hereinafter, specific embodiments of the present invention will be described with reference to the drawings.
圖1係模式性地表示使用本發明之一實施形態之導電糊而獲得之連接構造體的剖視圖。 Fig. 1 is a cross-sectional view schematically showing a connection structure obtained by using a conductive paste according to an embodiment of the present invention.
圖1所示之連接構造體1包括:第1連接對象構件2、第2連接對象 構件3、將第1連接對象構件2與第2連接對象構件3連接之連接部4。連接部4係由包含熱硬化性化合物、熱硬化劑、複數個焊料粒子、及複數個間隔物5之導電糊形成。上述熱硬化性化合物與上述熱硬化劑係熱硬化性成分。 The connection structure 1 shown in Fig. 1 includes a first connection target member 2 and a second connection object. The member 3 and the connecting portion 4 that connects the first connecting object member 2 and the second connecting target member 3. The connecting portion 4 is formed of a conductive paste containing a thermosetting compound, a thermosetting agent, a plurality of solder particles, and a plurality of spacers 5. The thermosetting compound and the thermosetting agent are thermosetting components.
連接部4具有:複數個焊料粒子凝聚而相互接合而成之焊料部4A、熱硬化性成分熱硬化而成之硬化物部4B、及間隔物5。 The connection portion 4 has a solder portion 4A in which a plurality of solder particles are aggregated and joined to each other, a cured portion 4B in which a thermosetting component is thermally cured, and a spacer 5.
第1連接對象構件2係於表面(上表面)具有複數個第1電極2a。第2連接對象構件3係於表面(下表面)具有複數個第2電極3a。第1電極2a與第2電極3a藉由焊料部4A而電性連接。因此,第1連接對象構件2與第2連接對象構件3藉由焊料部4A而電性連接。再者,於連接部4中,於與凝聚於第1電極2a與第2電極3a之間之焊料部4A不同之區域(硬化物部4B部分)中不存在焊料。於與焊料部4A不同之區域(硬化物部4B部分)中不存在與焊料部4A分離之焊料。再者,若為少量,則於與凝聚於第1電極2a與第2電極3a之間之焊料部4A不同之區域(硬化物部4B部分)中亦可存在焊料。 The first connection target member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection target member 3 has a plurality of second electrodes 3a on the surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection target member 2 and the second connection target member 3 are electrically connected by the solder portion 4A. Further, in the connection portion 4, solder is not present in a region (a portion of the cured portion 4B) different from the solder portion 4A that is aggregated between the first electrode 2a and the second electrode 3a. There is no solder separated from the solder portion 4A in a region different from the solder portion 4A (the portion of the cured portion 4B). In addition, in a small amount, solder may be present in a region (a portion of the cured portion 4B) different from the solder portion 4A that is aggregated between the first electrode 2a and the second electrode 3a.
間隔物5係接觸於第1連接對象構件2之第1電極2a與第2連接對象構件3之第2電極3a兩者。藉由間隔物5,而控制第1連接對象構件2與第2連接對象構件3之間隔,而控制第1電極2a與第2電極3a之間隔。間隔物5亦可接觸於第1連接對象構件2之未設置第1電極2a之區域與第2連接對象構件3之未設置第2電極3a之區域兩者。 The spacer 5 is in contact with both the first electrode 2a of the first connection member 2 and the second electrode 3a of the second connection member 3. The gap between the first connection target member 2 and the second connection target member 3 is controlled by the spacer 5, and the distance between the first electrode 2a and the second electrode 3a is controlled. The spacer 5 may be in contact with both the region where the first electrode 2a is not provided in the first connection member 2 and the region where the second electrode 3a is not provided in the second connection member 3.
如圖1所示,於連接構造體1中,複數個焊料粒子於第1電極2a與第2電極3a之間凝聚,複數個焊料粒子熔融後,焊料粒子之熔融物於電極之表面潤濕擴散後進行固化,而形成焊料部4A。因此,焊料部4A與第1電極2a、以及焊料部4A與第2電極3a之連接面積變大。即,藉由使用焊料粒子,與使用導電性之外表面為鎳、金或銅等金屬之導電性粒子之情形相比,焊料部4A與第1電極2a、以及焊料部4A與第2 電極3a之接觸面積變大。因此,連接構造體1中之導通可靠性及連接可靠性變高。再者,導電糊亦可含有助焊劑。於使用助焊劑之情形時,藉由加熱,通常助焊劑逐漸失去活性。 As shown in FIG. 1, in the connection structure 1, a plurality of solder particles are aggregated between the first electrode 2a and the second electrode 3a, and after a plurality of solder particles are melted, the melt of the solder particles is wetted and diffused on the surface of the electrode. Thereafter, curing is performed to form the solder portion 4A. Therefore, the connection area between the solder portion 4A and the first electrode 2a and the solder portion 4A and the second electrode 3a is increased. In other words, by using solder particles, the solder portion 4A and the first electrode 2a, and the solder portion 4A and the second portion are used as compared with the case where conductive particles having a conductive outer surface of a metal such as nickel, gold or copper are used. The contact area of the electrode 3a becomes large. Therefore, the conduction reliability and the connection reliability in the connection structure 1 become high. Further, the conductive paste may also contain a flux. In the case of using a flux, the flux is gradually deactivated by heating.
再者,於圖1所示之連接構造體1中,焊料部4A全部位於第1、第2電極2a、3a間之所對向之區域。圖3所示之變化例之連接構造體1X係僅連接部4X與圖1所示之連接構造體1不同。連接部4X具有焊料部4XA、硬化物部4XB、及間隔物5X。如連接構造體1X般,亦可焊料部4XA大部分位於第1、第2電極2a、3a之所對向之區域,焊料部4XA之一部分自第1、第2電極2a、3a之所對向之區域向側方溢出。自第1、第2電極2a、3a之所對向之區域向側方溢出之焊料部4XA係焊料部4XA之一部分,並非與焊料部4XA分離之焊料。再者,於本實施形態中,雖可減少與焊料部分離之焊料之量,但與焊料部分離之焊料亦可存在於硬化物部中。 Further, in the connection structure 1 shown in Fig. 1, the solder portions 4A are all located in the opposing regions between the first and second electrodes 2a and 3a. The connection structure 1X of the variation shown in FIG. 3 is different from the connection structure 1 shown in FIG. 1 only in the connection portion 4X. The connecting portion 4X has a solder portion 4XA, a cured portion 4XB, and a spacer 5X. As in the case of the connection structure 1X, the solder portion 4XA may be located in a region where the first and second electrodes 2a and 3a face each other, and a portion of the solder portion 4XA may be opposed to the first and second electrodes 2a and 3a. The area overflows to the side. One of the solder portions 4XA-based solder portions 4XA that overflows from the opposing regions of the first and second electrodes 2a and 3a is not solder separated from the solder portion 4XA. Further, in the present embodiment, the amount of solder separated from the solder portion can be reduced, but the solder separated from the solder portion may be present in the cured portion.
若減少焊料粒子之使用量,則容易獲得連接構造體1。若增加焊料粒子之使用量,則容易獲得連接構造體1X。再者,只要焊料於電極之表面潤濕擴散即可,未必焊料要於上下之電極間凝聚。 When the amount of use of the solder particles is reduced, the connection structure 1 is easily obtained. When the amount of use of the solder particles is increased, the connection structure 1X is easily obtained. Further, as long as the solder wets and spreads on the surface of the electrode, the solder does not necessarily aggregate between the upper and lower electrodes.
又,如圖4所示之連接構造體1Y般,亦可使用表面具有第1電極2a,且於第1電極2a側之無第1電極2a之區域具有第1凸部2y之第1連接對象構件2Y,與表面具有第2電極3a,且於第2電極3a側之無第2電極3a之區域具有第2凸部3y之第2連接對象構件3Y。第1凸部2y係較第1電極2a突出。第2凸部3y係較第2電極3a突出。第1凸部2y與第2凸部3y之間隔較第1電極2a與第2電極3a之間隔窄。於該連接構造體1Y中,連接部4Y具有焊料部4YA、硬化物部4YB、及間隔物5Y。於連接構造體1Y中,間隔物5Y係接觸於第1凸部2y與第2凸部3y兩者。作為結果,第1電極2a與第2電極3a之間隔受到間隔物5Y控制。 In the same manner as the connection structure 1Y shown in FIG. 4, the first connection object having the first protrusion 2y on the surface and the first electrode 2a on the first electrode 2a side and having the first protrusion 2y may be used. The member 2Y has the second electrode 3a on the surface, and the second connection member 3Y having the second convex portion 3y in the region on the second electrode 3a side where the second electrode 3a is absent. The first convex portion 2y protrudes from the first electrode 2a. The second convex portion 3y protrudes from the second electrode 3a. The interval between the first convex portion 2y and the second convex portion 3y is narrower than the interval between the first electrode 2a and the second electrode 3a. In the connection structure 1Y, the connection portion 4Y has a solder portion 4YA, a cured portion 4YB, and a spacer 5Y. In the connection structure 1Y, the spacer 5Y is in contact with both the first convex portion 2y and the second convex portion 3y. As a result, the interval between the first electrode 2a and the second electrode 3a is controlled by the spacer 5Y.
就進一步提高導通可靠性之觀點而言,較佳為於上述第1電極、 上述連接部、及上述第2電極之積層方向觀察上述第1電極與上述第2電極之相對向部分時,將上述連接部中之焊料部配置於上述第1電極與上述第2電極之相對向部分之面積100%中的50%以上(較佳為60%以上,更佳為70%以上,進而較佳為80%以上,尤佳為90%以上)。 From the viewpoint of further improving the conduction reliability, it is preferably the first electrode, When the connecting portion and the second electrode are viewed in the direction of lamination, the opposing portion of the first electrode and the second electrode is disposed, and the solder portion of the connecting portion is disposed opposite to the first electrode and the second electrode. 50% or more of the area is preferably 50% or more (preferably 60% or more, more preferably 70% or more, further preferably 80% or more, and particularly preferably 90% or more).
就進一步提高導通可靠性之觀點而言,較佳為於與上述第1電極、上述連接部、及上述第2電極之積層方向正交之方向觀察上述第1電極與上述第2電極之相對向部分時,將上述連接部中之焊料部之70%以上配置於上述第1電極與上述第2電極之相對向部分。 From the viewpoint of further improving the conduction reliability, it is preferable that the opposing direction of the first electrode and the second electrode is observed in a direction orthogonal to a lamination direction of the first electrode, the connecting portion, and the second electrode. In some cases, 70% or more of the solder portions in the connection portion are disposed in a facing portion of the first electrode and the second electrode.
其次,對使用本發明之一實施形態之導電糊而製造連接構造體1之方法之一例進行說明。 Next, an example of a method of manufacturing the bonded structure 1 using the conductive paste of one embodiment of the present invention will be described.
首先,準備於表面(上表面)具有第1電極2a之第1連接對象構件2。其次,如圖2(a)所示般,於第1連接對象構件2之表面上配置包含熱硬化性成分11B、複數個焊料粒子11A、及間隔物5之導電糊11(第1步驟)。於第1連接對象構件2之設置有第1電極2a之表面上配置導電糊11。於配置導電糊11後,將焊料粒子11A配置於第1電極2a(線)上、與未形成第1電極2a之區域(間隙)上兩者。 First, the first connection target member 2 having the first electrode 2a on the front surface (upper surface) is prepared. Next, as shown in FIG. 2(a), the conductive paste 11 including the thermosetting component 11B, the plurality of solder particles 11A, and the spacer 5 is placed on the surface of the first connection member 2 (first step). The conductive paste 11 is placed on the surface of the first connection member 2 on which the first electrode 2a is provided. After the conductive paste 11 is placed, the solder particles 11A are disposed on both the first electrode 2a (line) and the region (gap) where the first electrode 2a is not formed.
作為導電糊11之配置方法,並無特別限定,可列舉:利用分注器之塗佈、網版印刷、及利用噴墨裝置之噴出等。 The method of disposing the conductive paste 11 is not particularly limited, and examples thereof include coating by a dispenser, screen printing, and ejection by an inkjet device.
又,準備於表面(下表面)具有第2電極3a之第2連接對象構件3。其次,如圖2(b)所示般,於第1連接對象構件2之表面上之導電糊11上,於導電糊11之與第1連接對象構件2側相反側之表面上配置第2連接對象構件3(第2步驟)。於導電糊11之表面上自第2電極3a側配置第2連接對象構件3。此時,使第1電極2a與第2電極3a對向。 Moreover, the second connection member 3 having the second electrode 3a on the front surface (lower surface) is prepared. Then, as shown in FIG. 2(b), the second connection is placed on the surface of the conductive paste 11 on the side opposite to the first connection target member 2 on the conductive paste 11 on the surface of the first connection member 2. Target member 3 (second step). The second connection member 3 is placed on the surface of the conductive paste 11 from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.
其次,將導電糊11加熱至焊料粒子11A之熔點以上及熱硬化性成分11B之硬化溫度以上(第3步驟)。即,將導電糊11加熱至焊料粒子11A之熔點及熱硬化性成分11B之硬化溫度中之更低溫度以上。於該 加熱時,存在於未形成電極之區域之焊料粒子11A係於第1電極2a與第2電極3a之間凝聚(自我凝聚效果)。於本實施形態中,使用導電糊而並非導電膜,進而導電糊具有特定之組成,因此焊料粒子11A有效地於第1電極2a與第2電極3a之間凝聚。又,焊料粒子11A熔融而相互接合。又,熱硬化性成分11B進行熱硬化。其結果為,如圖2(c)所示般,藉由導電糊11而形成將第1連接對象構件2與第2連接對象構件3連接之連接部4。藉由導電糊11而形成連接部4,藉由複數個焊料粒子11A接合而形成焊料部4A,藉由熱硬化性成分11B熱硬化而形成硬化物部4B。若焊料粒子11A充分移動,則未位置於第1電極2a與第2電極3a之間之焊料粒子11A之移動開始後直至於第1電極2a與第2電極3a之間焊料粒子11A之移動結束,亦可不將溫度保持為一定。 Next, the conductive paste 11 is heated to a temperature equal to or higher than the melting point of the solder particles 11A and the hardening temperature of the thermosetting component 11B (third step). That is, the conductive paste 11 is heated to a temperature lower than the melting point of the solder particles 11A and the hardening temperature of the thermosetting component 11B. In this At the time of heating, the solder particles 11A existing in the region where the electrode is not formed are aggregated between the first electrode 2a and the second electrode 3a (self-aggregation effect). In the present embodiment, the conductive paste is used instead of the conductive film, and the conductive paste has a specific composition. Therefore, the solder particles 11A are effectively aggregated between the first electrode 2a and the second electrode 3a. Further, the solder particles 11A are melted and joined to each other. Further, the thermosetting component 11B is thermally cured. As a result, as shown in FIG. 2(c), the connection portion 4 that connects the first connection member 2 and the second connection member 3 is formed by the conductive paste 11. The connection portion 4 is formed by the conductive paste 11, and the solder portion 4A is joined by bonding a plurality of solder particles 11A, and the cured portion 4B is formed by thermosetting the thermosetting component 11B. When the solder particles 11A are sufficiently moved, the movement of the solder particles 11A between the first electrode 2a and the second electrode 3a is not completed until the movement of the solder particles 11A between the first electrode 2a and the second electrode 3a is completed. It is also possible not to keep the temperature constant.
於本實施形態中,於上述第2步驟及上述第3步驟中不進行加壓。於本實施形態中,第2連接對象構件3之重量施加於導電糊11。因此,於連接部4之形成時,焊料粒子11A於第1電極2a與第2電極3a之間有效地凝聚。又,連接部4X具有焊料部4XA、硬化物部4XB、及間隔物5。由於焊料粒子11A之凝聚,而容易擠出間隔物5。於連接部4之形成時,間隔物5可接觸於第1連接對象構件2與第2連接對象構件3兩者。具體而言,於連接部4之形成時,間隔物5可接觸於第1電極2a與第2電極3a兩者。再者,若於上述第2步驟及上述第3步驟中之至少一個步驟中進行加壓,則焊料粒子欲於第1電極與第2電極之間凝聚之作用受到抑制之傾向變高。本發明者發現上述情況。 In the present embodiment, no pressurization is performed in the second step and the third step. In the present embodiment, the weight of the second connection member 3 is applied to the conductive paste 11. Therefore, at the time of formation of the connection portion 4, the solder particles 11A are effectively aggregated between the first electrode 2a and the second electrode 3a. Further, the connecting portion 4X has a solder portion 4XA, a cured portion 4XB, and a spacer 5. The spacer 5 is easily extruded due to the agglomeration of the solder particles 11A. When the connection portion 4 is formed, the spacer 5 can contact both the first connection target member 2 and the second connection target member 3. Specifically, when the connection portion 4 is formed, the spacer 5 can contact both the first electrode 2a and the second electrode 3a. In addition, when pressurization is performed in at least one of the second step and the third step, the tendency of the solder particles to be agglomerated between the first electrode and the second electrode is suppressed. The inventors have found the above.
又,於本實施形態中,因不進行加壓,故而於塗佈有導電糊之第1連接對象構件重合第2連接對象構件時,即便於第1連接對象構件之電極與第2連接對象構件之電極之對位發生偏移的狀態下,將第1連接對象構件與第2連接對象構件重合之情形時,亦可修正上述偏移,而可將第1連接對象構件之電極與第2連接對象構件之電極連接(自動 對準效果)。其原因在於:於第1連接對象構件之電極與第2連接對象構件之電極之間自我凝聚之熔融的焊料因第1連接對象構件之電極與第2連接對象構件之電極之間之焊料與導電糊之其他成分接觸的面積成為最小者能量穩定,故而形成該成為最小之面積之連接構造,即對準的連接構造之力發揮作用。此時,較理想為導電糊未硬化;及於該溫度、時間下,導電糊之焊料粒子以外之成分之黏度非常低。 In addition, in the present embodiment, when the first connection member to which the conductive paste is applied is superposed on the second connection target member, the electrode of the first connection target member and the second connection target member are not applied. When the first connection target member and the second connection target member are overlapped in the state in which the alignment of the electrodes is shifted, the offset can be corrected, and the electrode of the first connection target member can be connected to the second connection. Electrode connection of the object member (automatic Alignment effect). The reason for this is that the solder which is self-aggregated between the electrode of the first connection member and the electrode of the second connection member is soldered and electrically conductive between the electrode of the first connection member and the electrode of the second connection member. The area in which the other components of the paste contact is the smallest, and the energy is stabilized. Therefore, the connection structure that forms the smallest area, that is, the force of the aligned connection structure functions. At this time, it is preferable that the conductive paste is not cured; and at this temperature and time, the viscosity of the components other than the solder particles of the conductive paste is extremely low.
間隔物存在於第1連接對象構件與第2連接對象構件之間,藉此可充分確保第1連接對象構件之電極、與第2連接對象構件之電極之間之距離。藉此,可確保焊料粒子進行凝聚之空間,而可提高焊料粒子之凝聚性。進而,因可於第1連接對象構件之電極、與第2連接對象構件之電極之間確保充分之焊料量,故而即便於相對之電極偏移而重合之情形時,亦容易表現出自動對準效果。關於導電連接後之較佳之電極之偏移量,於將電極之寬度設為L之情形時,較佳為0L以上(0以上),且較佳為0.9L以下,更佳為0.75L以下。又,關於電連接後之較佳之偏移量X,於將間隔物之粒徑設為R之情形時,較佳為0R以上(0以上),且較佳為3R以下,更佳為2R以下。 The spacer exists between the first connection target member and the second connection target member, whereby the distance between the electrode of the first connection target member and the electrode of the second connection target member can be sufficiently ensured. Thereby, the space in which the solder particles are agglomerated can be ensured, and the cohesiveness of the solder particles can be improved. Further, since a sufficient amount of solder can be secured between the electrode of the first connection member and the electrode of the second connection member, it is easy to exhibit automatic alignment even when the electrode is overlapped with respect to the electrode offset. effect. The offset amount of the electrode after the conductive connection is preferably 0 L or more (0 or more), and preferably 0.9 L or less, more preferably 0.75 L or less, when the width of the electrode is L. Further, in the case where the particle diameter of the spacer is set to R, the preferred offset amount X after the electrical connection is preferably 0R or more (0 or more), and preferably 3R or less, more preferably 2R or less. .
於焊料之熔點溫度下之導電糊之黏度較佳為50Pa‧s以下,更佳為10Pa‧s以下,進而較佳為1Pa‧s以下,且較佳為0.1Pa‧s以上,更佳為0.2Pa‧s以上。若為特定之黏度以下,則可有效率地使焊料粒子凝聚,若為特定之黏度以上,則可抑制連接部中之孔隙,而抑制導電糊向連接部以外溢出。 The viscosity of the conductive paste at the melting temperature of the solder is preferably 50 Pa s or less, more preferably 10 Pa ‧ or less, further preferably 1 Pa ‧ or less, and preferably 0.1 Pa ‧ or more, more preferably 0.2 Pa‧s or above. When the viscosity is at most the specific viscosity, the solder particles can be efficiently aggregated. If the viscosity is equal to or higher than the specific viscosity, the pores in the joint portion can be suppressed, and the conductive paste can be prevented from overflowing beyond the joint portion.
以上述方式獲得圖1所示之連接構造體1。再者,上述第2步驟與上述第3步驟亦可連續進行。又,亦可於進行上述第2步驟後,使所獲得之第1連接對象構件2、導電糊11、及第2連接對象構件3之積層體向加熱部移動,而進行上述第3步驟。為了進行上述加熱,可於加熱構件上配置上述積層體,亦可於加熱之空間內配置上述積層體。 The connection structure 1 shown in Fig. 1 is obtained in the above manner. Furthermore, the second step and the third step described above may be continuously performed. In addition, after the second step, the obtained third connecting member 2, the conductive paste 11, and the second connecting member 3 may be moved to the heating unit to perform the third step. In order to perform the above heating, the laminated body may be disposed on the heating member, or the laminated body may be disposed in a heated space.
上述第3步驟中之加熱溫度只要為焊料粒子之熔點以上及熱硬化性成分之硬化溫度以上,則無特別限定。上述加熱溫度較佳為140℃以上,更佳為160℃以上,且較佳為450℃以下,更佳為250℃以下,進而較佳為200℃以下。 The heating temperature in the third step is not particularly limited as long as it is equal to or higher than the melting point of the solder particles and the curing temperature of the thermosetting component. The heating temperature is preferably 140 ° C or higher, more preferably 160 ° C or higher, and is preferably 450 ° C or lower, more preferably 250 ° C or lower, and still more preferably 200 ° C or lower.
於第3步驟前,為了使熔融前之焊料粒子之凝聚均勻化,亦可設置加熱步驟。上述加熱步驟中之加熱溫度係於較佳為60℃以上、更佳為80℃以上、且較佳為130℃以下、更佳為120℃以下之溫度條件下保持較佳為5秒以上且較佳為120秒以下。藉由該加熱步驟,熱硬化性成分由於熱而低黏度化,而熔融前之焊料粒子進行凝聚,藉此形成網狀構造,而於第3步驟中焊料粒子熔融而凝聚時,可減少未凝聚之焊料粒子。 Before the third step, a heating step may be provided in order to homogenize the aggregation of the solder particles before melting. The heating temperature in the heating step is preferably maintained at 5 ° C or higher, more preferably 80 ° C or higher, and preferably 130 ° C or lower, more preferably 120 ° C or lower. Good for 120 seconds or less. In the heating step, the thermosetting component is low in viscosity due to heat, and the solder particles before melting are aggregated to form a network structure, and in the third step, when the solder particles are melted and aggregated, the non-condensation can be reduced. Solder particles.
於第3步驟中,亦可於較佳為焊料之熔點(℃)以上、更佳為焊料之熔點(℃)+5℃以上且較佳為焊料之熔點(℃)+20℃以下、更佳為焊料之熔點(℃)+10℃以下之溫度下保持較佳為10秒以上且較佳為120秒以下後,升溫至熱硬化性成分之硬化溫度。藉此,可於熱硬化性成分硬化前之熱硬化性成分之黏度較低之狀態下,使焊料粒子之凝聚結束,而可進行進一步均勻之焊料粒子之凝聚。 In the third step, it may preferably be a melting point (° C.) or more of the solder, more preferably a melting point (° C) of the solder + 5° C. or more, and preferably a melting point (° C) of the solder + 20° C. or less. The temperature is raised to the curing temperature of the thermosetting component after the temperature of the melting point of the solder (° C.) + 10 ° C or lower is preferably 10 seconds or longer, preferably 120 seconds or shorter. Thereby, the aggregation of the solder particles can be completed in a state where the viscosity of the thermosetting component before the thermosetting component is cured is low, and further uniform aggregation of the solder particles can be performed.
第3步驟中之升溫速度係關於自30℃直至焊料粒子之熔點之升溫,較佳為50℃/秒以下,更佳為20℃/秒以下,進而較佳為10℃/秒以下,且較佳為1℃/秒以上、更佳為5℃/秒以上。若升溫速度為上述下限以上,則焊料粒子之凝聚變得進一步均勻。若升溫速度為上述上限以下,則可抑制由熱硬化性成分之硬化之進行引起的過度之黏度上升,而變得難以阻礙焊料粒子之凝聚。 The temperature increase rate in the third step is preferably 50 ° C / sec or less, more preferably 20 ° C / sec or less, still more preferably 10 ° C / sec or less, and more preferably 10 ° C / sec or less, and more preferably from 30 ° C up to the melting point of the solder particles. Preferably, it is 1 ° C / sec or more, more preferably 5 ° C / sec or more. When the temperature increase rate is equal to or higher than the above lower limit, the aggregation of the solder particles is further uniform. When the temperature increase rate is equal to or lower than the above upper limit, excessive viscosity increase due to progress of curing of the thermosetting component can be suppressed, and it becomes difficult to inhibit aggregation of the solder particles.
再者,於上述第3步驟後,為了位置之修正或製造之再運行,可將第1連接對象構件或第2連接對象構件自連接部剝離。用以進行該剝離之加熱溫度係較佳為焊料粒子之熔點以上、更佳為焊料粒子之熔點 (℃)+10℃以上。用以進行該剝離之加熱溫度亦可為焊料粒子之熔點(℃)+100℃以下。 Further, after the third step, the first connection member or the second connection member may be peeled off from the connection portion for the purpose of correction of the position or re-operation of the manufacturing. The heating temperature for performing the peeling is preferably at least the melting point of the solder particles, more preferably the melting point of the solder particles. (°C) +10 ° C or more. The heating temperature for performing the peeling may be a melting point (°C) of the solder particles + 100 ° C or less.
作為上述第3步驟中之加熱方法,可列舉如下方法:使用回焊爐或使用烘箱,將連接構造體整體加熱至焊料粒子之熔點以上及熱硬化性成分之硬化溫度以上之方法;或僅將連接構造體之連接部局部進行加熱之方法。 The heating method in the third step may be a method in which the entire connection structure is heated to a temperature equal to or higher than the melting point of the solder particles and the curing temperature of the thermosetting component by using a reflow furnace or an oven; or only A method of locally heating the connection portion of the connection structure.
作為局部進行加熱之方法所使用之器具,可列舉:加熱板、賦予熱風之熱風槍、烙鐵、及紅外線加熱器等。 Examples of the apparatus used for the method of locally heating include a hot plate, a hot air gun for supplying hot air, a soldering iron, and an infrared heater.
又,利用加熱板局部進行加熱時,較佳為連接部之正下方係以導熱性較高之金屬形成加熱板上表面,其他加熱欠佳之位置係以氟樹脂等導熱性較低之材質形成加熱板上表面。 Further, when the heating plate is partially heated, it is preferable that the surface of the heating plate is formed of a metal having a high thermal conductivity immediately below the connecting portion, and the other heat-dissipating position is formed of a material having a low thermal conductivity such as a fluororesin. Heat the surface of the board.
上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉:半導體晶片、半導體組件、LED晶片、LED組件、電容器及二極體等電子零件、以及樹脂膜、印刷基板、軟性印刷基板、軟性扁形電纜、剛性軟性基板、環氧玻璃基板及玻璃基板等電路基板等電子零件等。上述第1、第2連接對象構件較佳為電子零件。 The first and second connection target members are not particularly limited. Specific examples of the first and second connection target members include semiconductor wafers, semiconductor modules, LED chips, LED components, electronic components such as capacitors and diodes, and resin films, printed boards, and flexible printed boards. Electronic components such as flexible flat cables, rigid flexible substrates, epoxy glass substrates, and glass substrates. The first and second connection target members are preferably electronic components.
較佳為上述第1連接對象構件及上述第2連接對象構件中之至少一者為樹脂膜、軟性印刷基板、軟性扁形電纜或剛性軟性基板。上述第2連接對象構件較佳為樹脂膜、軟性印刷基板、軟性扁形電纜或剛性軟性基板。樹脂膜、軟性印刷基板、軟性扁形電纜及剛性軟性基板具有柔軟性較高,相對輕量之性質。於將導電膜用於此種連接對象構件之連接之情形時,存在焊料粒子難以於電極上凝聚之傾向。相對於此,即便使用樹脂膜、軟性印刷基板、軟性扁形電纜或剛性軟性基板,亦可藉由使用導電糊使焊料粒子有效率地於電極上凝聚,而充分提高電極間之導通可靠性。於使用樹脂膜、軟性印刷基板、軟性扁形 電纜或剛性軟性基板之情形時,與使用半導體晶片等其他連接對象構件之情形相比,可進一步有效地獲得利用不進行加壓之電極間之導通可靠性之提高效果。 It is preferable that at least one of the first connection target member and the second connection target member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. The second connection target member is preferably a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate. The resin film, the flexible printed circuit board, the flexible flat cable, and the rigid flexible substrate have high flexibility and are relatively lightweight. When a conductive film is used for the connection of such a connection target member, there is a tendency that the solder particles are hard to aggregate on the electrode. On the other hand, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible substrate is used, the solder particles can be efficiently aggregated on the electrodes by using the conductive paste, and the conduction reliability between the electrodes can be sufficiently improved. For resin film, flexible printed substrate, soft flat In the case of a cable or a rigid flexible substrate, the effect of improving the conduction reliability between the electrodes which are not pressurized can be more effectively obtained than in the case of using another connection member such as a semiconductor wafer.
作為設置於上述連接對象構件之電極,可列舉:金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極、銀電極、SUS電極及鎢電極等金屬電極。於上述連接對象構件為軟性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極、銀電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極、銀電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉:摻雜有3價之金屬元素之氧化銦及摻雜有3價之金屬元素之氧化鋅等。作為上述3價之金屬元素,可列舉:Sn、Al及Ga等。 Examples of the electrode provided in the connection target member include metal electrodes such as a gold electrode, a nickel electrode, a tin electrode, an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, a SUS electrode, and a tungsten electrode. In the case where the connection target member is a flexible printed substrate, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode or a copper electrode. In the case where the connection target member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode or a tungsten electrode. Further, in the case where the electrode is an aluminum electrode, it may be an electrode formed only of aluminum, or an electrode having an aluminum layer on a surface layer of the metal oxide layer. Examples of the material of the metal oxide layer include indium oxide doped with a trivalent metal element and zinc oxide doped with a trivalent metal element. Examples of the trivalent metal element include Sn, Al, Ga, and the like.
較佳為將上述第1電極及上述第2電極以面陣構造進行配置、或者以周邊構造進行配置。於將電極以面陣構造、周邊構造配置於面上之情形時,進一步有效地發揮本發明之效果。所謂面陣構造,係如下構造:於連接對象構件之配置有電極之面將電極配置成格子狀。所謂周邊構造,係如下構造:將電極配置於連接對象構件之外周部。於電極排列成梳狀之構造之情形時,只要沿著與梳垂直之方向焊料粒子凝聚即可,相對於此,於上述構造中,必須於配置有電極之面上使焊料粒子整面且均勻地凝聚,因此於先前之方法中焊料量容易變得不均勻,相對於此,本發明之方法進一步有效地發揮本發明之效果。 Preferably, the first electrode and the second electrode are arranged in a planar structure or in a peripheral structure. When the electrode is placed on the surface in the area array structure or the peripheral structure, the effects of the present invention are further effectively exhibited. The surface array structure is a structure in which electrodes are arranged in a lattice shape on a surface on which electrodes are arranged on a connection target member. The peripheral structure is a structure in which an electrode is disposed on the outer peripheral portion of the connection target member. In the case where the electrodes are arranged in a comb-like structure, the solder particles may be agglomerated along the direction perpendicular to the comb. In contrast, in the above configuration, the solder particles must be made uniform and uniform on the surface on which the electrodes are disposed. Since the amount of solder is easily uneven in the prior method, the method of the present invention further effectively exerts the effects of the present invention.
以下,列舉實施例及比較例,對本發明具體地進行說明。本發明並不僅限定於以下之實施例。 Hereinafter, the present invention will be specifically described by way of examples and comparative examples. The invention is not limited to the following examples.
聚合物A: Polymer A:
雙酚F與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之反應物 (聚合物A)之合成: Reactant of bisphenol F with 1,6-hexanediol diglycidyl ether and bisphenol F epoxy resin Synthesis of (Polymer A):
將雙酚F(以重量比2:3:1包含4,4'-亞甲基雙酚、2,4'-亞甲基雙酚、及2,2'-亞甲基雙酚)100重量份、1,6-己二醇二縮水甘油醚130重量份、及雙酚F型環氧樹脂(DIC公司製造之「EPICLON EXA-830CRP」)5重量份、間苯二酚型環氧化合物(長瀨化成公司製造之「EX-201」)10重量份放入三口燒瓶中,於氮氣流下,於100℃下使該等溶解。其後,添加作為羥基與環氧基之加成反應觸媒之三苯基丁基溴化鏻0.15重量份,於氮氣流下,於140℃下進行4小時加成聚合反應,藉此獲得反應物(聚合物A)。 Bisphenol F (containing 4,4'-methylene bisphenol, 2,4'-methylene bisphenol, and 2,2'-methylene bisphenol in a weight ratio of 2:3:1) 100 weight 130 parts by weight of 1,6-hexanediol diglycidyl ether, and 5 parts by weight of a bisphenol F-type epoxy resin ("EPICLON EXA-830CRP" manufactured by DIC Corporation), a resorcinol type epoxy compound ( 10 parts by weight of "EX-201" manufactured by Nagase Kasei Co., Ltd. was placed in a three-necked flask, and the mixture was dissolved at 100 ° C under a nitrogen stream. Thereafter, 0.15 parts by weight of triphenylbutylphosphonium bromide as an addition reaction catalyst of a hydroxyl group and an epoxy group was added, and a polymerization reaction was carried out at 140 ° C for 4 hours under a nitrogen stream to obtain a reactant. (Polymer A).
藉由NMR(Nuclear magnetic resonance,核磁共振)而確認加成聚合反應進行,而確認到反應物(聚合物A)於主鏈具有源自雙酚F之羥基與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之環氧基鍵結而成之結構單元,且於兩末端具有環氧基。 It was confirmed by NMR (Nuclear magnetic resonance) that the addition polymerization reaction proceeded, and it was confirmed that the reactant (Polymer A) had a hydroxyl group derived from bisphenol F and 1,6-hexanediol condensed water in the main chain. A structural unit in which an epoxy group of a glyceryl ether and a bisphenol F-type epoxy resin is bonded and has an epoxy group at both ends.
藉由GPC而獲得之反應物(聚合物A)之重量平均分子量為28000,數量平均分子量為8000。 The reactant (Polymer A) obtained by GPC had a weight average molecular weight of 28,000 and a number average molecular weight of 8,000.
聚合物B:兩末端環氧基剛直骨架苯氧基樹脂,三菱化學公司製造之「YX6900BH45」,重量平均分子量16000 Polymer B: two-terminal epoxy-based rigid-frame phenoxy resin, "YX6900BH45" manufactured by Mitsubishi Chemical Corporation, weight average molecular weight 16000
熱硬化性化合物1:間苯二酚型環氧化合物,長瀨化成公司製造之「EX-201」 Thermosetting compound 1: Resorcinol type epoxy compound, "EX-201" manufactured by Nagase Chemicals Co., Ltd.
熱硬化性化合物2:環氧化合物,DIC公司製造之「EXA-4850-150」,分子量900,環氧當量450g/eq Thermosetting compound 2: epoxy compound, "EXA-4850-150" manufactured by DIC Corporation, molecular weight 900, epoxy equivalent 450g/eq
熱硬化劑1:三羥甲基丙烷三(3-巰基丙酸酯),SC有機化學公司製造之「TMMP」 Thermosetting agent 1: Trimethylolpropane tris(3-mercaptopropionate), "TMMP" manufactured by SC Organic Chemical Co., Ltd.
潛伏性環氧熱硬化劑1:T & K TOKA公司製造之「Fujicure 7000」 Latent epoxy heat hardener 1: "Fujicure 7000" manufactured by T & K TOKA
助焊劑1:戊二酸,和光純藥工業公司製造,熔點(活性溫度)96 ℃ Flux 1: glutaric acid, manufactured by Wako Pure Chemical Industries, Inc., melting point (activity temperature) 96 °C
焊料粒子1~3之製作方法: How to make solder particles 1~3:
具有陰離子聚合物1之焊料粒子:將焊料粒子本體200g、己二酸40g、及丙酮70g稱取至三口燒瓶中,其次添加作為焊料粒子本體之表面之羥基與己二酸之羧基之脫水縮合觸媒的二丁基氧化錫0.3g,於60℃下進行4小時反應。其後,藉由過濾而回收焊料粒子。 Solder particles having an anion polymer 1 : 200 g of the solder particle body, 40 g of adipic acid, and 70 g of acetone are weighed into a three-necked flask, and then added as a dehydration condensation contact between a hydroxyl group on the surface of the solder particle body and a carboxyl group of adipic acid 0.3 g of dibutyltin oxide of the medium was reacted at 60 ° C for 4 hours. Thereafter, the solder particles are recovered by filtration.
將所回收之焊料粒子、與己二酸50g、甲苯200g、及對甲苯磺酸0.3g稱取至三口燒瓶中,一面進行抽真空及回流,一面於120℃下進行3小時反應。此時,使用迪安-斯塔克提取裝置,將藉由脫水縮合而生成之水去除並且進行反應。 The collected solder particles, 50 g of adipic acid, 200 g of toluene, and 0.3 g of p-toluenesulfonic acid were weighed into a three-necked flask, and the mixture was evacuated and refluxed, and the reaction was carried out at 120 ° C for 3 hours. At this time, water formed by dehydration condensation was removed and reacted using a Dean-Stark extraction apparatus.
其後,藉由過濾而回收焊料粒子,利用己烷進行洗淨並進行乾燥。其後,利用球磨機將所獲得之焊料粒子壓碎後,以成為特定CV值之方式選擇篩子。 Thereafter, the solder particles were collected by filtration, washed with hexane, and dried. Thereafter, the obtained solder particles were crushed by a ball mill, and then the sieve was selected so as to have a specific CV value.
(ζ電位測定) (ζ potential measurement)
又,將具有陰離子聚合物1之焊料粒子0.05g放入甲醇10g中,進行超音波處理,藉此使所獲得之焊料粒子均勻地分散而獲得分散液。使用該分散液,且使用Beckman Coulter公司製造之「Delsamax PRO」,利用電泳測定法對ζ電位進行測定。 Further, 0.05 g of the solder particles having the anionic polymer 1 was placed in 10 g of methanol, and subjected to ultrasonic treatment, whereby the obtained solder particles were uniformly dispersed to obtain a dispersion. The zeta potential was measured by an electrophoresis method using the dispersion and using "Delsamax PRO" manufactured by Beckman Coulter.
(陰離子聚合物之重量平均分子量) (weight average molecular weight of anionic polymer)
焊料粒子之表面之陰離子聚合物1之重量平均分子量係使用0.1N之鹽酸使焊料溶解後,藉由過濾回收聚合物,藉由GPC而求出。 The weight average molecular weight of the anionic polymer 1 on the surface of the solder particles was obtained by dissolving the solder using 0.1 N hydrochloric acid, and recovering the polymer by filtration to obtain GPC.
(焊料粒子之CV值) (CV value of solder particles)
利用雷射繞射式粒度分佈測定裝置(堀場製作所公司製造之「LA-920」)對CV值進行測定。 The CV value was measured by a laser diffraction type particle size distribution measuring apparatus ("LA-920" manufactured by Horiba, Ltd.).
焊料粒子1(SnBi焊料粒子,熔點139℃,使用對三井金屬公司製造之「ST-3」進行過篩選之焊料粒子本體並進行過表面處理之具有陰 離子聚合物1之焊料粒子,平均粒徑4μm,CV值7%,表面之ζ電位:+0.65mV,聚合物分子量Mw=6500) Solder particles 1 (SnBi solder particles, melting point 139 ° C, using a solder particle body that has been screened by "ST-3" manufactured by Mitsui Metals Co., Ltd. and having a surface treatment Ion polymer 1 solder particles, average particle size 4 μm, CV value 7%, surface zeta potential: +0.65 mV, polymer molecular weight Mw = 6500)
焊料粒子2(SnBi焊料粒子,熔點139℃,使用對三井金屬公司製造之「DS10」進行過篩選之焊料粒子本體並進行過表面處理之具有陰離子聚合物1之焊料粒子,平均粒徑13μm,CV值20%,表面之ζ電位:+0.48mV,聚合物分子量Mw=7000) Solder particles 2 (SnBi solder particles, melting point 139 ° C, solder particles having an anionic polymer 1 using a solder particle body and having been subjected to surface treatment by "DS10" manufactured by Mitsui Metals Co., Ltd., average particle diameter 13 μm, CV Value 20%, surface zeta potential: +0.48mV, polymer molecular weight Mw=7000)
焊料粒子3(SnBi焊料粒子,熔點139℃,使用對三井金屬公司製造之「10-25」進行過篩選之焊料粒子本體並進行過表面處理之具有陰離子聚合物1之焊料粒子,平均粒徑25μm,CV值15%,表面之ζ電位:+0.4mV,聚合物分子量Mw=8000) Solder particles 3 (SnBi solder particles, melting point 139 ° C, solder particles having an anionic polymer 1 using a solder particle body which has been subjected to screening of "10-25" manufactured by Mitsui Metals Co., Ltd., having an average particle diameter of 25 μm , CV value 15%, surface zeta potential: +0.4mV, polymer molecular weight Mw = 8000)
焊料粒子4(SnBi焊料粒子,熔點139℃,使用對三井金屬公司製造之「ST-3」進行過篩選之焊料粒子本體並進行過表面處理之具有陰離子聚合物1之焊料粒子,平均粒徑3μm,CV值7%,表面之ζ電位:+0.65mV,聚合物分子量Mw=6500) Solder particles 4 (SnBi solder particles, melting point 139 ° C, solder particles having an anionic polymer 1 using a solder particle body which has been subjected to screening of "ST-3" manufactured by Mitsui Metals Co., Ltd., having an average particle diameter of 3 μm , CV value of 7%, surface zeta potential: +0.65mV, polymer molecular weight Mw = 6500)
導電性粒子1:樹脂粒子之表面上形成有厚度1μm之銅層,該銅層之表面上形成有厚度3μm之焊料層(錫:鉍=43重量%:57重量%)之導電性粒子 Conductive particle 1: A copper layer having a thickness of 1 μm was formed on the surface of the resin particle, and a conductive layer having a thickness of 3 μm (tin: 铋 = 43% by weight: 57% by weight) was formed on the surface of the copper layer.
導電性粒子1之製作方法: Method for producing conductive particles 1:
對平均粒徑10μm之二乙烯苯樹脂粒子(積水化學工業公司製造之「Micropcarl SP-210」)進行無電鍍鎳,而於樹脂粒子之表面上形成厚度0.1μm之基底鍍鎳層。其次,對形成有基底鍍鎳層之樹脂粒子進行電解鍍銅,而形成厚度1μm之銅層。進而,使用含有錫及鉍之電解電鍍液進行電解電鍍,而形成厚度3μm之焊料層。以上述方式,製作於樹脂粒子之表面上形成有厚度1μm之銅層,於該銅層之表面形成有厚度3μm之焊料層(錫:鉍=43重量%:57重量%)之導電性粒子1。 Nickel-plated benzene resin particles ("Micropcarl SP-210" manufactured by Sekisui Chemical Co., Ltd.) having an average particle diameter of 10 μm were subjected to electroless nickel plating, and a base nickel plating layer having a thickness of 0.1 μm was formed on the surface of the resin particles. Next, the resin particles on which the underlying nickel plating layer was formed were subjected to electrolytic copper plating to form a copper layer having a thickness of 1 μm. Further, electrolytic plating was carried out using an electrolytic plating solution containing tin and antimony to form a solder layer having a thickness of 3 μm. In the above manner, a copper layer having a thickness of 1 μm was formed on the surface of the resin particles, and a conductive layer 1 having a thickness of 3 μm (tin: 铋 = 43% by weight: 57% by weight) was formed on the surface of the copper layer. .
間隔物1(平均粒徑20μm,CV值5%,軟化點330℃,積水化學工 業公司製造,二乙烯苯交聯粒子,10%K值4400N/mm2,壓縮恢復率55%) Spacer 1 (average particle size 20 μm, CV value 5%, softening point 330 ° C, manufactured by Sekisui Chemical Co., Ltd., divinylbenzene crosslinked particles, 10% K value 4400 N/mm 2 , compression recovery rate 55%)
間隔物2(平均粒徑30μm,CV值5%,軟化點330℃,積水化學工業公司製造,二乙烯苯交聯粒子,10%K值4200N/mm2,壓縮恢復率54%) Spacer 2 (average particle size 30 μm, CV value 5%, softening point 330 ° C, manufactured by Sekisui Chemical Co., Ltd., divinylbenzene crosslinked particles, 10% K value 4200 N/mm 2 , compression recovery rate 54%)
間隔物3(平均粒徑50μm,CV值5%,軟化點330℃,積水化學工業公司製造,二乙烯苯交聯粒子,10%K值4100N/mm2,壓縮恢復率54%) Spacer 3 (average particle size 50 μm, CV value 5%, softening point 330 ° C, manufactured by Sekisui Chemical Co., Ltd., divinylbenzene crosslinked particles, 10% K value 4100 N/mm 2 , compression recovery rate 54%)
苯氧基樹脂(新日鐵住金化學公司製造之「YP-50S」) Phenoxy resin ("YP-50S" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.)
(實施例1~10) (Examples 1 to 10)
(1)異向性導電糊之製作 (1) Production of anisotropic conductive paste
以下述表1所示之調配量調配下述表1所示之成分,而獲得異向性導電糊。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste.
(2)第1連接構造體(L/S=50μm/50μm)之製作 (2) Production of the first connection structure (L/S = 50 μm / 50 μm)
準備於上表面具有L/S為50μm/50μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之環氧玻璃基板(FR-4基板)(第1連接對象構件)。又,準備於下表面具有L/S為50μm/50μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之軟性印刷基板(第2連接對象構件)。 An epoxy glass substrate (FR-4 substrate) (first connection target member) having a copper electrode pattern (thickness of a copper electrode of 12 μm) having an L/S of 50 μm/50 μm and an electrode length of 3 mm was prepared on the upper surface. In addition, a flexible printed circuit board (second connection target member) having a copper electrode pattern (having a thickness of 12 μm of a copper electrode) having an L/S of 50 μm/50 μm and an electrode length of 3 mm was prepared.
環氧玻璃基板與軟性印刷基板之重合面積設為1.5cm×3mm,連接之電極數設為75對。 The overlapping area of the epoxy glass substrate and the flexible printed circuit board was set to 1.5 cm × 3 mm, and the number of connected electrodes was set to 75 pairs.
於上述環氧玻璃基板之上表面,使用金屬遮罩,利用網版印刷將剛製作後之異向性導電糊以厚度成為100μm之方式塗佈於環氧玻璃基板之電極上而形成異向性導電糊層。其次,於異向性導電糊層之上表面將上述軟性印刷基板以電極彼此對向之方式進行積層。此時,不進行加壓。上述軟性印刷基板之重量施加於異向性導電糊層。其後,一面以異向性導電糊層之溫度成為190℃之方式進行加熱,一面使焊 料熔融,且使異向性導電糊層於190℃下硬化10秒,而獲得第1連接構造體。 On the upper surface of the above-mentioned epoxy glass substrate, an anisotropic conductive paste immediately after fabrication was applied to the electrode of the epoxy glass substrate by screen printing using a metal mask to form an anisotropy. Conductive paste layer. Next, the flexible printed circuit board is laminated on the upper surface of the anisotropic conductive paste layer so that the electrodes face each other. At this time, no pressurization is performed. The weight of the above flexible printed substrate is applied to the anisotropic conductive paste layer. Thereafter, heating was performed while the temperature of the anisotropic conductive paste layer was 190 ° C. The material was melted, and the anisotropic conductive paste layer was cured at 190 ° C for 10 seconds to obtain a first bonded structure.
(3)第2連接構造體(L/S=75μm/75μm)之製作 (3) Production of the second connection structure (L/S = 75 μm / 75 μm)
準備於上表面具有L/S為75μm/75μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之環氧玻璃基板(FR-4基板)(第1連接對象構件)。又,準備於下表面具有L/S為75μm/75μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之軟性印刷基板(第2連接對象構件)。 An epoxy glass substrate (FR-4 substrate) (first connection target member) having a copper electrode pattern (thickness of a copper electrode of 12 μm) having an L/S of 75 μm/75 μm and an electrode length of 3 mm was prepared on the upper surface. In addition, a flexible printed circuit board (second connection target member) having a copper electrode pattern (thickness of a copper electrode of 12 μm) having an L/S of 75 μm/75 μm and an electrode length of 3 mm was prepared on the lower surface.
使用L/S不同之上述環氧玻璃基板及軟性印刷基板,除此以外,以與第1連接構造體之製作相同之方式進行而獲得第2連接構造體。 The second connection structure was obtained in the same manner as the production of the first connection structure, except that the above-described epoxy glass substrate and the flexible printed circuit board having different L/S were used.
(4)第3連接構造體(L/S=100μm/100μm)之製作 (4) Production of the third connection structure (L/S = 100 μm / 100 μm)
準備於上表面具有L/S為100μm/100μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之環氧玻璃基板(FR-4基板)(第1連接對象構件)。又,準備於下表面具有L/S為100μm/100μm、電極長度3mm之銅電極圖案(銅電極之厚度12μm)之軟性印刷基板(第2連接對象構件)。 An epoxy glass substrate (FR-4 substrate) (first connection target member) having a copper electrode pattern (thickness of a copper electrode of 12 μm) having an L/S of 100 μm/100 μm and an electrode length of 3 mm was prepared on the upper surface. Further, a flexible printed circuit board (second connection target member) having a copper electrode pattern (having a thickness of 12 μm of a copper electrode) having an L/S of 100 μm/100 μm and an electrode length of 3 mm was prepared on the lower surface.
使用L/S不同之上述環氧玻璃基板及軟性印刷基板外,除此以外,以與第1連接構造體之製作相同之方式進行而獲得第3連接構造體。 The third connection structure was obtained in the same manner as the production of the first connection structure except that the epoxy glass substrate and the flexible printed circuit board having different L/S were used.
(比較例1) (Comparative Example 1)
以下述表1所示之調配量調配下述表1所示之成分而獲得異向性導電糊。使用所獲得之異向性導電糊,除此以外,以與實施例1相同之方式進行而獲得第1、第2、第3連接構造體。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste. The first, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.
(比較例2) (Comparative Example 2)
以下述表1所示之調配量調配下述表1所示之成分而獲得異向性導電糊。使用所獲得之異向性導電糊,且於加熱時施加1MPa之壓力,除此以外,以與實施例1相同之方式進行而獲得第1、第2、第3連 接構造體。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste. The first, second, and third connections were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used and a pressure of 1 MPa was applied during heating. Connect the structure.
(比較例3) (Comparative Example 3)
使苯氧基樹脂(新日鐵住金化學公司製造之「YP-50S」)以固形物成分成為50重量%之方式溶解於甲基乙基酮(MEK)而獲得溶解液。將下述表1所示之調配量之下述表1所示之除苯氧基樹脂外之成分、與上述溶解液之總量進行調配,使用行星式攪拌機,以2000rpm攪拌5分鐘後,使用棒式塗佈機,以乾燥後之厚度成為30μm之方式塗佈於脫模PET(聚對苯二甲酸乙二酯)膜上。藉由於室溫下進行真空乾燥而將MEK去除,藉此獲得異向性導電膜。 A phenoxy resin ("YP-50S" manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) was dissolved in methyl ethyl ketone (MEK) so as to have a solid content of 50% by weight to obtain a solution. The components other than the phenoxy resin shown in the following Table 1 shown in the following Table 1 were blended with the total amount of the above-mentioned solution, and stirred at 2000 rpm for 5 minutes using a planetary mixer. The bar coater was applied to a release PET (polyethylene terephthalate) film so as to have a thickness of 30 μm after drying. The MEK was removed by vacuum drying at room temperature, whereby an anisotropic conductive film was obtained.
使用異向性導電膜,除此以外,以與實施例1相同之方式進行而獲得第1、第2、第3連接構造體。 The first, second, and third connection structures were obtained in the same manner as in Example 1 except that the anisotropic conductive film was used.
(比較例4、5) (Comparative examples 4 and 5)
以下述表1所示之調配量調配下述表1所示之成分而獲得異向性導電糊。使用所獲得之異向性導電糊,除此以外,以與實施例1相同之方式進行而獲得第1、第2、第3連接構造體。 The components shown in the following Table 1 were blended in the amounts shown in Table 1 below to obtain an anisotropic conductive paste. The first, second, and third connection structures were obtained in the same manner as in Example 1 except that the obtained anisotropic conductive paste was used.
(評價) (Evaluation)
(1)黏度 (1) Viscosity
使用E型黏度計(東機產業公司製造),於25℃及5rpm之條件對異向性導電糊於25℃下之黏度(η25)進行測定。 The viscosity (η25) of the anisotropic conductive paste at 25 ° C was measured at 25 ° C and 5 rpm using an E-type viscometer (manufactured by Toki Sangyo Co., Ltd.).
(2)焊料部之厚度 (2) Thickness of solder portion
對所獲得之連接構造體之剖面進行觀察,藉此評價位置於上下之電極間之焊料部之厚度。 The cross section of the obtained connection structure was observed to evaluate the thickness of the solder portion between the electrodes above and below.
(3)自動對準性 (3) Automatic alignment
於第3連接構造體之製作中,將環氧玻璃基板之電極、與軟性印刷基板之電極之偏移量設為25μm(第4連接構造體用)、50μm(第5連接構造體用)、75μm(第6連接構造體用)、90μm(第7連接構造體用)而 進行重合,除此以外,以相同方式進行而獲得第4~第7連接構造體。 In the production of the third connection structure, the offset between the electrode of the epoxy glass substrate and the electrode of the flexible printed circuit board is 25 μm (for the fourth connection structure), 50 μm (for the fifth connection structure), 75 μm (for the sixth connection structure) and 90 μm (for the seventh connection structure) Except for this, the fourth to seventh connection structures were obtained in the same manner.
對所獲得之第4~第7連接構造體之環氧玻璃基板之電極、與軟性印刷基板之電極之偏移量進行測定。製作25個第4~第7連接構造體,針對各自之位置於連接構造體之兩端之電極,測定上下電極之偏移量,求出該測定值之平均值。以下述標準判定自動對準性。 The amount of shift between the electrode of the epoxy glass substrate of the obtained fourth to seventh connection structures and the electrode of the flexible printed circuit board was measured. The 25th to 7th connection structures were produced, and the offset amounts of the upper and lower electrodes were measured for the electrodes at the both ends of the connection structure, and the average value of the measured values was obtained. The automatic alignment was judged by the following criteria.
○○:偏移量之平均值未達10μm ○○: The average value of the offset is less than 10μm
○:偏移量之平均值為10μm以上且未達25μm ○: The average value of the offset is 10 μm or more and less than 25 μm.
△:偏移量之平均值為25μm以上且未達50μm △: The average value of the offset is 25 μm or more and less than 50 μm.
×:偏移量之平均值為50μm以上 ×: The average value of the offset is 50 μm or more
(4)電極上之焊料之配置精度1 (4) Configuration accuracy of the solder on the electrode 1
針對所獲得之第1、第2、第3連接構造體,於第1電極、連接部、及第2電極之積層方向觀察第1電極與第2電極之相對向部分時,對第1電極與第2電極之相對向部分之面積100%中連接部中之配置有焊料部之面積的比例X進行評價。以下述標準判定電極上之焊料之配置精度1。 When the opposing portions of the first electrode and the second electrode are observed in the laminated direction of the first electrode, the connecting portion, and the second electrode, the first electrode and the first electrode are connected to the first, second, and third connecting structures. The ratio X of the area of the solder portion disposed in the connection portion in the area of the opposing portion of the second electrode was evaluated as 100%. The arrangement accuracy 1 of the solder on the electrode was determined by the following criteria.
[電極上之焊料之配置精度1之判定標準] [Criteria for determining the accuracy of the solder on the electrode 1]
○○:比例X為70%以上 ○○: The ratio X is 70% or more
○:比例X為60%以上且未達70% ○: The ratio X is 60% or more and less than 70%
△:比例X為50%以上且未達60% △: the ratio X is 50% or more and less than 60%
×:比例X未達50% ×: The ratio X is less than 50%
(5)電極上之焊料之配置精度2 (5) Arrangement accuracy of solder on the electrode 2
針對所獲得之第1、第2、第3連接構造體,於與第1電極、連接部、及第2電極之積層方向正交之方向觀察第1電極與第2電極之相對向部分時,對連接部中之焊料部100%中配置於第1電極與第2電極之相對向部分之連接部中的焊料部之比例Y進行評價。以下述基準判定電極上之焊料之配置精度2。 When the opposing portions of the first electrode and the second electrode are observed in a direction orthogonal to the lamination direction of the first electrode, the connecting portion, and the second electrode, the first, second, and third connecting structures are obtained. The ratio Y of the solder portions disposed in the connection portion between the opposing portions of the first electrode and the second electrode in the solder portion 100% in the connection portion was evaluated. The arrangement accuracy 2 of the solder on the electrode was determined on the basis of the following criteria.
[電極上之焊料之配置精度2之判定標準] [Criteria for determining the accuracy of solder on the electrode 2]
○○:比例Y為99%以上 ○○: The ratio Y is 99% or more
○:比例Y為90%以上且未達99% ○: The ratio Y is 90% or more and less than 99%
△:比例Y為70%以上且未達90% △: the ratio Y is 70% or more and less than 90%
×:比例Y未達70% ×: The ratio Y is less than 70%
(6)上下之電極間之導通可靠性 (6) Continuity reliability between the upper and lower electrodes
針對所獲得之第1、第2、第3連接構造體(n=15個),藉由4端子法分別對上下之電極間之每個連接處之連接電阻進行測定。算出連接電阻之平均值。再者,根據電壓=電流×電阻之關係,可藉由對流過一定電流時之電壓進行測定而求出連接電阻。以下述基準判定導通可靠性。 With respect to the obtained first, second, and third connection structures (n = 15), the connection resistance at each connection between the upper and lower electrodes was measured by a four-terminal method. Calculate the average value of the connection resistance. Further, according to the relationship of voltage=current×resistance, the connection resistance can be obtained by measuring the voltage when a constant current flows. The conduction reliability was determined based on the following criteria.
[導通可靠性之判定標準] [Determination criteria for continuity reliability]
○○:連接電阻之平均值為50mΩ以下 ○○: The average value of the connection resistance is 50mΩ or less
○:連接電阻之平均值超過50mΩ且為70mΩ以下 ○: The average value of the connection resistance exceeds 50 mΩ and is 70 mΩ or less.
△:連接電阻之平均值超過70mΩ且為100mΩ以下 △: The average value of the connection resistance exceeds 70 mΩ and is 100 mΩ or less.
×:連接電阻之平均值超過100mΩ,或產生連接不良 ×: The average value of the connection resistance exceeds 100mΩ, or a connection failure occurs.
(7)鄰接之電極間之絕緣可靠性 (7) Insulation reliability between adjacent electrodes
針對所獲得之第1、第2、第3連接構造體(n=15個),於85℃、濕度85%之環境中放置100小時後,向鄰接之電極間施加5V之電壓,於25處測定電阻值。以下述標準判定絕緣可靠性。 The first, second, and third connection structures (n = 15) obtained were placed in an environment of 85 ° C and a humidity of 85% for 100 hours, and then a voltage of 5 V was applied between the adjacent electrodes, at 25 points. The resistance value was measured. The insulation reliability was determined by the following criteria.
[絕緣可靠性之判定標準] [Determination criteria for insulation reliability]
○○:連接電阻之平均值為107Ω以上 ○○: The average value of the connection resistance is 10 7 Ω or more.
○:連接電阻之平均值為106Ω以上且未達107Ω ○: The average value of the connection resistance is 10 6 Ω or more and less than 10 7 Ω
△:連接電阻之平均值為105Ω以上且未達106Ω △: The average value of the connection resistance is 10 5 Ω or more and less than 10 6 Ω.
×:連接電阻之平均值未達105Ω ×: The average value of the connection resistance is less than 10 5 Ω
(8)上下之電極間之位置偏移 (8) Positional shift between the upper and lower electrodes
針對所獲得之第1、第2、第3連接構造體,於第1電極、連接部、及第2電極之積層方向觀察第1電極與第2電極之相對向部分時,評價第1電極之中心線與第2電極之中心線是否對齊,以及位置偏移之距離。以下述標準判定上下之電極間之位置偏移。 When the opposing portions of the first electrode and the second electrode are observed in the laminated direction of the first electrode, the connecting portion, and the second electrode, the first electrode is evaluated for the first, second, and third connecting structures obtained. Whether the center line is aligned with the center line of the second electrode, and the distance of the positional offset. The positional shift between the upper and lower electrodes was determined by the following criteria.
[上下之電極間之位置偏移之判定標準] [Criteria for determining the positional shift between the upper and lower electrodes]
○○:位置偏移未達15μm ○○: Position offset is less than 15μm
○:位置偏移為15μm以上且未達25μm ○: The positional shift is 15 μm or more and less than 25 μm.
△:位置偏移為25μm以上且未達40μm △: The positional shift is 25 μm or more and less than 40 μm.
×:位置偏移為40μm以上 ×: The positional shift is 40 μm or more
將詳細內容及結果示於下述表1、2。 The details and results are shown in Tables 1 and 2 below.
於使用樹脂膜、軟性扁形電纜及剛性軟性基板代替軟性印刷基板之情形時,亦發現同樣之傾向。 The same tendency was observed when a resin film, a flexible flat cable, and a rigid flexible substrate were used instead of the flexible printed substrate.
1‧‧‧連接構造體 1‧‧‧Connection structure
2‧‧‧第1連接對象構件 2‧‧‧1st connection object component
2a‧‧‧第1電極 2a‧‧‧1st electrode
3‧‧‧第2連接對象構件 3‧‧‧2nd connection object component
3a‧‧‧第2電極 3a‧‧‧2nd electrode
4‧‧‧連接部 4‧‧‧Connecting Department
4A‧‧‧焊料部 4A‧‧‧ solder department
4B‧‧‧硬化物部 4B‧‧‧ Hardened Parts
5‧‧‧間隔物 5‧‧‧ spacers
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JP2010040893A (en) * | 2008-08-07 | 2010-02-18 | Sumitomo Bakelite Co Ltd | Method of connecting terminals to each other, method of manufacturing semiconductor device using the same, and method of coagulating conductive particle |
KR101025620B1 (en) | 2009-07-13 | 2011-03-30 | 한국과학기술원 | Anisotropic Conductive Adhesives for UltraSonic Bonding and Electrical Interconnection Method of Electronic Components Using Thereof |
KR102095291B1 (en) | 2012-11-28 | 2020-03-31 | 세키스이가가쿠 고교가부시키가이샤 | Conductive particle with insulating particles, conductive material and connection structure |
-
2015
- 2015-11-27 KR KR1020167031969A patent/KR102431084B1/en active IP Right Grant
- 2015-11-27 WO PCT/JP2015/083349 patent/WO2016088664A1/en active Application Filing
- 2015-11-27 CN CN201580057986.9A patent/CN107148653B/en active Active
- 2015-11-27 JP JP2015558297A patent/JP6067149B2/en active Active
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Publication number | Publication date |
---|---|
TWI688636B (en) | 2020-03-21 |
CN107148653A (en) | 2017-09-08 |
KR20170094070A (en) | 2017-08-17 |
CN107148653B (en) | 2019-03-29 |
WO2016088664A1 (en) | 2016-06-09 |
JP6067149B2 (en) | 2017-01-25 |
JPWO2016088664A1 (en) | 2017-04-27 |
KR102431084B1 (en) | 2022-08-11 |
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