TWI704581B - Conductive material and connection structure - Google Patents

Conductive material and connection structure Download PDF

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TWI704581B
TWI704581B TW105127115A TW105127115A TWI704581B TW I704581 B TWI704581 B TW I704581B TW 105127115 A TW105127115 A TW 105127115A TW 105127115 A TW105127115 A TW 105127115A TW I704581 B TWI704581 B TW I704581B
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solder
electrode
conductive
temperature
particles
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TW105127115A
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TW201721663A (en
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永田麻衣
定永周治郎
伊藤将大
久保田敬士
石澤英亮
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日商積水化學工業股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/02Soldered or welded connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/04Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation using electrically conductive adhesives
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector

Abstract

本發明提供一種可將導電性粒子中之焊料選擇性地配置於電極上而提高導通可靠性之導電材料。 本發明之導電材料含有於導電部之外表面部分具有焊料之複數個導電性粒子、及熱硬化性成分,且於自25℃起分別以10℃/分鐘之升溫速度加熱上述導電性粒子與上述熱硬化性成分而進行示差掃描熱量測定時,顯示出源自上述導電性粒子中之焊料之熔融之吸熱峰之溫度區域與顯示出源自上述熱硬化性成分之硬化之放熱峰之溫度區域至少一部分重複。The present invention provides a conductive material capable of selectively disposing solder in conductive particles on an electrode to improve conduction reliability. The conductive material of the present invention contains a plurality of conductive particles having solder on the outer surface of the conductive part and a thermosetting component, and the conductive particles and the above-mentioned conductive particles are heated at a temperature increase rate of 10°C/min from 25°C. When performing differential scanning calorimetry for thermosetting components, the temperature region showing the endothermic peak derived from the melting of the solder in the conductive particles and the temperature region showing the exothermic peak derived from the hardening of the thermosetting component overlap at least in part .

Description

導電材料及連接構造體Conductive material and connection structure

本發明係關於一種含有具有焊料之導電性粒子之導電材料。又,本發明係關於一種使用上述導電材料之連接構造體。 The present invention relates to a conductive material containing conductive particles with solder. In addition, the present invention relates to a connection structure using the above-mentioned conductive material.

各向異性導電糊及各向異性導電膜等各向異性導電材料已廣為人知。於上述各向異性導電材料中,於黏合劑中分散有導電性粒子。 Anisotropic conductive materials such as anisotropic conductive paste and anisotropic conductive film have been widely known. In the anisotropic conductive material described above, conductive particles are dispersed in the adhesive.

為了獲得各種連接構造體,而將上述各向異性導電材料用於例如軟性印刷基板與玻璃基板之連接(FOG(Film on Glass,鍍膜玻璃))、半導體晶片與軟性印刷基板之連接(COF(Chip on Film,薄膜覆晶))、半導體晶片與玻璃基板之連接(COG(Chip on Glass,玻璃覆晶))、及軟性印刷基板與環氧玻璃基板之連接(FOB(Film on Board,鍍膜板))等。 In order to obtain various connection structures, the above-mentioned anisotropic conductive materials are used for, for example, the connection between flexible printed substrates and glass substrates (FOG (Film on Glass)), and the connection between semiconductor chips and flexible printed substrates (COF (Chip on Film), the connection between the semiconductor chip and the glass substrate (COG (Chip on Glass, chip on glass)), and the connection between the flexible printed substrate and the epoxy glass substrate (FOB (Film on Board, coated board) )Wait.

於利用上述各向異性導電材料將例如軟性印刷基板之電極與環氧玻璃基板之電極進行電性連接時,係將含有導電性粒子之各向異性導電材料配置於環氧玻璃基板上。繼而,積層軟性印刷基板並進行加熱及加壓。藉此,使各向異性導電材料硬化,經由導電性粒子將電極間電性連接,而獲得連接構造體。 When electrically connecting the electrode of the flexible printed circuit board and the electrode of the glass epoxy substrate using the above-mentioned anisotropic conductive material, the anisotropic conductive material containing conductive particles is arranged on the glass epoxy substrate. Then, the flexible printed circuit board is laminated and heated and pressurized. Thereby, the anisotropic conductive material is cured, and the electrodes are electrically connected via the conductive particles to obtain a connected structure.

作為上述各向異性導電材料之一例,於下述之專利文獻1中記載有含有導電性粒子與在該導電性粒子之熔點下未結束硬化之樹脂成分之各向異性導電材料。作為上述導電性粒子,具體而言,可列舉錫(Sn)、銦(In)、鉍(Bi)、銀(Ag)、銅(Cu)、鋅(Zn)、鉛(Pb)、鎘(Cd)、鎵(Ga)及鉈(Tl)等金屬、 或該等金屬之合金。 As an example of the anisotropic conductive material described above, Patent Document 1 below describes an anisotropic conductive material containing conductive particles and a resin component that has not finished curing at the melting point of the conductive particles. Specific examples of the above-mentioned conductive particles include tin (Sn), indium (In), bismuth (Bi), silver (Ag), copper (Cu), zinc (Zn), lead (Pb), cadmium (Cd) ), gallium (Ga) and thallium (Tl) and other metals, Or an alloy of these metals.

於專利文獻1中,記載有經由下述步驟而將電極間進行電性連接:將各向異性導電樹脂加熱至高於上述導電性粒子之熔點、且上述樹脂成分未結束硬化之溫度之樹脂加熱步驟;使上述樹脂成分硬化之樹脂成分硬化步驟。又,於專利文獻1中記載有於專利文獻1之圖8所示之溫度分佈下進行安裝。於專利文獻1中,導電性粒子於在加熱各向異性導電樹脂之溫度下未結束硬化之樹脂成分內熔融。 In Patent Document 1, it is described that the electrodes are electrically connected through the following steps: a resin heating step of heating an anisotropic conductive resin to a temperature higher than the melting point of the conductive particles and the temperature at which the resin component has not finished curing ; The resin component hardening step of hardening the above-mentioned resin component. In addition, it is described in Patent Document 1 that the mounting is performed under the temperature distribution shown in FIG. 8 of Patent Document 1. In Patent Document 1, the conductive particles are melted in a resin component that has not finished curing at the temperature at which the anisotropic conductive resin is heated.

於下述之專利文獻2中揭示有一種接著帶,其包含含有熱硬化性樹脂之樹脂層、焊料粉、及硬化劑,且上述焊料粉與上述硬化劑存在於上述樹脂層中。該接著帶為膜狀而非糊狀。 Patent Document 2 described below discloses an adhesive tape that includes a resin layer containing a thermosetting resin, solder powder, and a hardening agent, and the solder powder and the hardening agent are present in the resin layer. The adhesive tape is film-like rather than pasty.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2004-260131號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2004-260131

[專利文獻2]WO2008/023452A1 [Patent Document 2] WO2008/023452A1

於先前之含有焊料粉、或表面具有焊料層之導電性粒子之各向異性導電材料中,存在未將焊料粉或導電性粒子有效率地配置於電極(線)上之情況。 In the conventional anisotropic conductive material containing solder powder or conductive particles with a solder layer on the surface, there are cases where the solder powder or conductive particles are not efficiently arranged on the electrode (wire).

又,若使用專利文獻1所記載之各向異性導電材料,藉由專利文獻1所記載之方法將電極間進行電性連接,則存在未將含有焊料之導電性粒子有效率地配置於電極(線)上之情況。又,於專利文獻1之實施例中,為了使焊料於焊料之熔點以上之溫度下充分移動,而保持為一定溫度,連接構造體 之製造效率變低。若於專利文獻1之圖8所示之溫度分佈下進行安裝,則連接構造體之製造效率變低。 In addition, if the anisotropic conductive material described in Patent Document 1 is used to electrically connect the electrodes by the method described in Patent Document 1, conductive particles containing solder may not be efficiently arranged on the electrodes ( Online). In addition, in the example of Patent Document 1, in order to make the solder sufficiently move at a temperature above the melting point of the solder, the temperature is maintained to connect the structure The manufacturing efficiency becomes low. If the installation is performed under the temperature distribution shown in FIG. 8 of Patent Document 1, the manufacturing efficiency of the connection structure becomes low.

又,專利文獻2所記載之接著帶為膜狀而非糊狀。於具有如專利文獻2所記載之組成之接著帶中,難以將焊料粉有效率地配置於電極(線)上。例如,於專利文獻2所記載之接著帶中,容易將焊料粉之一部分亦配置於未形成有電極之區域(間隔)。配置於未形成有電極之區域之焊料粉無助於電極間之導通。 In addition, the adhesive tape described in Patent Document 2 has a film shape rather than a paste shape. In the adhesive tape having the composition described in Patent Document 2, it is difficult to efficiently arrange the solder powder on the electrode (wire). For example, in the adhesive tape described in Patent Document 2, it is easy to arrange a part of the solder powder in the region (space) where the electrode is not formed. The solder powder arranged in the area where the electrode is not formed does not contribute to the conduction between the electrodes.

本發明之目的在於提供一種可將導電性粒子中之焊料選擇性地配置於電極上而提高導通可靠性之導電材料。又,本發明之目的在於提供一種使用上述導電材料之連接構造體。 The object of the present invention is to provide a conductive material capable of selectively disposing solder in conductive particles on electrodes to improve the reliability of conduction. Furthermore, an object of the present invention is to provide a connection structure using the above-mentioned conductive material.

根據本發明之廣義態樣,提供一種導電材料,其含有於導電部之外表面部分具有焊料之複數個導電性粒子、及熱硬化性成分,且於自25℃起分別以10℃/分鐘之升溫速度加熱上述導電性粒子與上述熱硬化性成分而進行示差掃描熱量測定時,顯示出源自上述導電性粒子中之焊料之熔融之吸熱峰之溫度區域與顯示出源自上述熱硬化性成分之硬化之放熱峰之溫度區域至少一部分重複。 According to a broad aspect of the present invention, there is provided a conductive material, which contains a plurality of conductive particles with solder on the outer surface of the conductive part, and a thermosetting component, and the temperature is 10°C/min from 25°C. When performing differential scanning calorimetry by heating the conductive particles and the thermosetting component at the heating rate, the temperature range showing the endothermic peak derived from the melting of the solder in the conductive particles and the temperature region showing the endothermic peak derived from the thermosetting component The temperature region of the exothermic peak of hardening is at least partially repeated.

於本發明之導電材料之某特定態樣中,源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度以下之溫度區域中之源自上述熱硬化性成分之硬化之總放熱量小於源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度以上之溫度區域中之源自上述熱硬化性成分之硬化之總放熱量。 In a specific aspect of the electrically conductive material of the present invention, the total exothermic heat derived from the hardening of the thermosetting component in the temperature range below the endothermic peak temperature of the melting of the solder in the conductive particles is smaller than the source The total exothermic heat derived from the hardening of the thermosetting component in the temperature region above the endothermic peak top temperature of the melting of the solder in the above-mentioned conductive particles.

於本發明之導電材料之某特定態樣中,於較源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度更低溫側存在源自上述熱硬化性成分之硬化之 第1放熱峰頂溫度,且於較源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度更高溫側存在源自上述熱硬化性成分之硬化之第2放熱峰頂溫度。 In a specific aspect of the conductive material of the present invention, there is a hardening derived from the thermosetting component at a lower temperature than the endothermic peak temperature derived from the melting of the solder in the conductive particle The first exothermic peak temperature is higher than the endothermic peak temperature derived from the melting of the solder in the conductive particles, and there is a second exothermic peak temperature derived from the hardening of the thermosetting component.

於本發明之導電材料之某特定態樣中,上述吸熱峰頂溫度與上述第1放熱峰頂溫度之差之絕對值為3℃以上、60℃以下,且上述吸熱峰頂溫度與上述第2放熱峰頂溫度之差之絕對值為5℃以上、60℃以下。 In a specific aspect of the conductive material of the present invention, the absolute value of the difference between the endothermic peak top temperature and the first exothermic peak top temperature is 3°C or more and 60°C or less, and the endothermic peak top temperature is the same as the second exothermic peak temperature. The absolute value of the difference in exothermic peak top temperature is 5°C or more and 60°C or less.

於本發明之導電材料之某特定態樣中,上述吸熱峰之高溫側之峰結束溫度低於最高溫側之上述放熱峰之高溫側之峰結束溫度。 In a specific aspect of the conductive material of the present invention, the end temperature of the peak on the high temperature side of the endothermic peak is lower than the end temperature of the peak on the high temperature side of the exothermic peak on the highest temperature side.

於本發明之導電材料之某特定態樣中,上述吸熱峰之高溫側之峰結束溫度低於最高溫側之上述放熱峰之高溫側之峰結束溫度,且上述吸熱峰之低溫側之峰起始溫度高於最低溫側之上述放熱峰之低溫側之峰起始溫度。 In a specific aspect of the conductive material of the present invention, the end temperature of the peak on the high temperature side of the endothermic peak is lower than the end temperature of the peak on the high temperature side of the exothermic peak on the highest temperature side, and the peak start temperature on the low temperature side of the endothermic peak is higher The peak starting temperature on the low temperature side of the above exothermic peak on the lowest temperature side.

於本發明之導電材料之某特定態樣中,上述導電性粒子為焊料粒子。 In a specific aspect of the conductive material of the present invention, the conductive particles are solder particles.

於本發明之導電材料之某特定態樣中,於上述導電性粒子之外表面存在羧基。 In a specific aspect of the conductive material of the present invention, carboxyl groups are present on the outer surface of the conductive particles.

於本發明之導電材料之某特定態樣中,上述導電材料於25℃下為液狀且為導電糊。 In a specific aspect of the conductive material of the present invention, the conductive material is liquid and conductive paste at 25°C.

根據本發明之廣義態樣,提供一種連接構造體,其具備表面具有至少1個第1電極之第1連接對象構件、表面具有至少1個第2電極之第2連接對象構件及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且上述連接部為上述之導電材料之硬化物,上述第1電極與上述第2電極利用上述連接部中之焊料部進行電性連接。 According to a broad aspect of the present invention, there is provided a connection structure including a first connection object member having at least one first electrode on the surface, a second connection object member having at least one second electrode on the surface, and the first A connection part where the connection object member and the second connection object member are connected, and the connection part is a cured product of the conductive material, and the first electrode and the second electrode are electrically connected by the solder part in the connection part.

於本發明之連接構造體之某特定態樣中,較佳為於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,於上述第1電極與上述第2電極之互相對向之部分之面 積100%中之50%以上配置有上述連接部中之焊料部。 In a specific aspect of the connection structure of the present invention, it is preferable to observe the opposing relationship between the first electrode and the second electrode in the direction in which the first electrode, the connecting portion, and the second electrode are stacked. Part, on the opposite side of the first electrode and the second electrode More than 50% of the product 100% is configured with the solder part in the above-mentioned connection part.

由於本發明之導電材料含有於導電部之外表面部分具有焊料之複數個導電性粒子、及熱硬化性成分,且於自25℃起分別以10℃/分鐘之升溫速度加熱上述導電性粒子與上述熱硬化性成分而進行示差掃描熱量測定時,顯示出源自上述導電性粒子中之焊料之熔融之吸熱峰之溫度區域與顯示出源自上述熱硬化性成分之硬化之放熱峰之溫度區域至少一部分重複,因此可將導電性粒子中之焊料選擇性地配置於電極上而可提高導通可靠性。 Since the conductive material of the present invention contains a plurality of conductive particles having solder on the outer surface of the conductive part, and a thermosetting component, the conductive particles and the heat-curing components are heated at a heating rate of 10°C/min from 25°C. When the thermosetting component is subjected to differential scanning calorimetry, at least a part of the temperature region showing the endothermic peak derived from the melting of the solder in the conductive particles and the temperature region showing the exothermic peak derived from the hardening of the thermosetting component Repeating, therefore, the solder in the conductive particles can be selectively arranged on the electrode, and the conduction reliability can be improved.

1:連接構造體 1: Connection structure

1X:連接構造體 1X: Connection structure

2:第1連接對象構件 2: The first connection object component

2a:第1電極 2a: first electrode

3:第2連接對象構件 3: The second connection object component

3a:第2電極 3a: second electrode

4:連接部 4: Connection part

4A:焊料部 4A: Solder part

4B:硬化物部 4B: Hardened part

4X:連接部 4X: Connection part

4XA:焊料部 4XA: Solder Department

4XB:硬化物部 4XB: Hardened part

11:導電材料 11: conductive material

11A:焊料粒子(導電性粒子) 11A: Solder particles (conductive particles)

11B:熱硬化性成分 11B: Thermosetting component

21:導電性粒子(焊料粒子) 21: Conductive particles (solder particles)

31:導電性粒子 31: Conductive particles

32:基材粒子 32: Substrate particles

33:導電部(具有焊料之導電部) 33: Conductive part (conductive part with solder)

33A:第2導電部 33A: The second conductive part

33B:焊料部 33B: Solder section

41:導電性粒子 41: conductive particles

42:焊料部 42: Solder Department

圖1係表示於示差掃描熱量測定中源自導電性粒子中之焊料之熔融之吸熱峰與源自熱硬化性成分之硬化之放熱峰之關係之一例的模式圖。 FIG. 1 is a schematic diagram showing an example of the relationship between the endothermic peak derived from the melting of solder in conductive particles and the exothermic peak derived from the hardening of the thermosetting component in differential scanning calorimetry.

圖2係模式性地表示使用本發明之一實施形態之導電材料而獲得之連接構造體之剖面圖。 Fig. 2 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention.

圖3(a)~(c)係用以說明使用本發明之一實施形態之導電材料而製造連接構造體之方法之一例之各步驟的剖面圖。 3(a) to (c) are cross-sectional views for explaining each step of an example of a method of manufacturing a connection structure using a conductive material according to an embodiment of the present invention.

圖4係表示連接構造體之變化例之剖面圖。 Fig. 4 is a cross-sectional view showing a modification of the connection structure.

圖5係表示可用於導電材料之導電性粒子之第1例之剖面圖。 Fig. 5 is a cross-sectional view showing a first example of conductive particles that can be used for conductive materials.

圖6係表示可用於導電材料之導電性粒子之第2例之剖面圖。 Fig. 6 is a cross-sectional view showing a second example of conductive particles that can be used for conductive materials.

圖7係表示可用於導電材料之導電性粒子之第3例之剖面圖。 Fig. 7 is a cross-sectional view showing a third example of conductive particles that can be used for conductive materials.

以下,對本發明之詳細內容進行說明。 Hereinafter, the details of the present invention will be described.

(導電材料) (Conductive material)

本發明之導電材料含有複數個導電性粒子與黏合劑。上述導電性粒子 具有導電部。上述導電性粒子於導電部之外表面部分具有焊料。焊料含有於導電部中,為導電部之一部分或全部。 The conductive material of the present invention contains a plurality of conductive particles and a binder. The above conductive particles With conductive parts. The said electroconductive particle has solder on the outer surface part of a conductive part. The solder is contained in the conductive part and is part or all of the conductive part.

本發明之導電材料含有熱硬化性成分作為上述黏合劑。上述熱硬化性成分較佳為含有熱硬化性化合物與熱硬化劑。 The conductive material of the present invention contains a thermosetting component as the above-mentioned binder. The said thermosetting component preferably contains a thermosetting compound and a thermosetting agent.

於本發明中,於自25℃起以10℃/分鐘之升溫速度進行加熱並進行示差掃描熱量測定時,顯示出源自上述導電性粒子中之焊料之熔融之吸熱峰之溫度區域與顯示出源自上述熱硬化性成分之硬化之放熱峰之溫度區域至少一部分重複。 In the present invention, when heating is performed at a temperature increase rate of 10°C/min from 25°C and differential scanning calorimetry is performed, the temperature range and the source of the endothermic peak derived from the melting of the solder in the conductive particles are shown At least a part of the temperature region from the exothermic peak of the curing of the thermosetting component is repeated.

具體而言,以10℃/分鐘之升溫速度加熱上述熱硬化性成分,並進行示差掃描熱量測定(differential scanning calorimetry,DSC)。又,以10℃/分鐘之升溫速度加熱上述導電性粒子,並進行示差掃描熱量測定(DSC)。該測定可使用導電材料進行。如圖1所模式性地表示般,於該DSC中,於本發明之導電材料中,顯示出源自上述導電性粒子中之焊料之熔融之吸熱峰P3之溫度區域與顯示出源自上述熱硬化性成分之硬化之放熱峰P1、P2之溫度區域至少一部分重複。 Specifically, the above-mentioned thermosetting component is heated at a temperature increase rate of 10°C/min, and differential scanning calorimetry (DSC) is performed. In addition, the conductive particles were heated at a temperature increase rate of 10°C/min, and differential scanning calorimetry (DSC) was performed. The measurement can be performed using conductive materials. As shown schematically in Figure 1, in the DSC, in the conductive material of the present invention, the temperature range of the endothermic peak P3 derived from the melting of the solder in the conductive particles is shown to be derived from the heat The temperature region of the exothermic peaks P1 and P2 of hardening of the hardening component overlaps at least partially.

於本發明中,由於具備上述之構成,因此可將導電性粒子中之焊料選擇性地配置於電極上。於將電極間進行電性連接之情形時,導電性粒子中之焊料容易聚集於上下相對向之電極間,而可將導電性粒子中之焊料有效率地配置於電極(線)上。並且,變得不易於電極與焊料部之間殘存熱硬化性成分之硬化物,而可增大電極與焊料部之接觸面積。 In the present invention, since the above-mentioned structure is provided, the solder in the conductive particles can be selectively arranged on the electrode. When the electrodes are electrically connected, the solder in the conductive particles tends to gather between the electrodes facing up and down, and the solder in the conductive particles can be efficiently arranged on the electrodes (wires). In addition, it becomes less likely that the cured product of the thermosetting component remains between the electrode and the solder portion, and the contact area between the electrode and the solder portion can be increased.

又,難以使導電性粒子中之焊料之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之焊料之量非常少。於本發明中,可使未位於相對向之電極間之焊料有效率地移動至相對向之電極間。 因此,可提高電極間之導通可靠性。並且可防止不得連接之橫向鄰接之電極間之電性連接,而可提高絕緣可靠性。 In addition, it is difficult to arrange a part of the solder in the conductive particles in the area (space) where the electrode is not formed, and the amount of the solder to be arranged in the area where the electrode is not formed can be very small. In the present invention, the solder not located between the facing electrodes can be efficiently moved between the facing electrodes. Therefore, the reliability of conduction between the electrodes can be improved. And it can prevent the electrical connection between the laterally adjacent electrodes that cannot be connected, and can improve the insulation reliability.

如圖1所示,較佳為源自上述導電性粒子中之焊料之熔融之吸熱峰頂P3t溫度以下之溫度區域中之源自上述熱硬化性成分之硬化之總放熱量(1)小於源自上述導電性粒子中之焊料之熔融之吸熱峰頂P3t溫度以上之溫度區域中之源自上述熱硬化性成分之硬化之總放熱量(2)。總放熱量(1)較佳為總放熱量(2)之1/2以下,更佳為1/5以下。藉由總放熱量(1)相對較小,於焊料熔融前可充分確保導電材料之厚度,而使複數個導電性粒子之位置接近,結果可使複數個導電性粒子進一步移動至電極上。尤其於進行半導體晶片等之面上之安裝之情形時,由於樹脂會自中心部向外周部流動,因此中心部與外周部之電極上之焊料量變得容易產生差異,藉由將源自上述熱硬化性成分之硬化之總放熱量調整為上述範圍內,可均勻地安裝中心部與外周部之電極上之焊料量,而可有效地抑制電極上之焊料量之不均。藉由總放熱量(2)相對較大,於焊料熔融後,可使配置於電極上之焊料停留於電極上,而進一步增多電極上之焊料量。 As shown in Fig. 1, it is preferable that the total exothermic amount of heat derived from the hardening of the thermosetting component in the temperature range below the P3t temperature of the endothermic peak of the melting of the solder in the conductive particles (1) is less than the source The total exothermic amount of heat derived from the hardening of the thermosetting component in the temperature range above the P3t temperature of the endothermic peak top of the melting of the solder in the above-mentioned conductive particles (2). The total heat release (1) is preferably 1/2 or less of the total heat release (2), more preferably 1/5 or less. Since the total amount of heat (1) is relatively small, the thickness of the conductive material can be sufficiently ensured before the solder is melted, and the positions of the conductive particles can be brought close. As a result, the conductive particles can be further moved to the electrode. Especially when mounting semiconductor chips on the surface, since the resin flows from the center to the outer periphery, the amount of solder on the electrodes at the center and the outer periphery is likely to be different. The total amount of heat released by the hardening of the hardening component is adjusted to the above range, so that the amount of solder on the center and outer periphery of the electrode can be installed uniformly, and the unevenness of the amount of solder on the electrode can be effectively suppressed. Due to the relatively large total heat release (2), after the solder is melted, the solder disposed on the electrode can stay on the electrode, thereby further increasing the amount of solder on the electrode.

如圖1所示,較佳為於較源自上述導電性粒子中之焊料之熔融之吸熱峰頂P3t溫度更低溫側存在源自上述熱硬化性成分之硬化之第1放熱峰頂P1t溫度,且於較源自上述導電性粒子中之焊料之熔融之吸熱峰頂P3t溫度更高溫側存在源自上述熱硬化性成分之硬化之第2放熱峰頂P2t溫度。於該情形時,可使複數個導電性粒子之位置接近,由於複數個導電性粒子之位置接近後,焊料會迅速熔融,因此結果可使複數個導電性粒子進一步移動至電極上。 As shown in Fig. 1, it is preferable that the first exothermic peak P1t temperature derived from the hardening of the thermosetting component is present at a lower temperature than the endothermic peak top P3t temperature derived from the melting of the solder in the conductive particles. In addition, there is a second exothermic peak P2t temperature derived from the hardening of the thermosetting component on the higher temperature side than the endothermic peak top P3t temperature derived from the melting of the solder in the conductive particles. In this case, the positions of a plurality of conductive particles can be brought close. As the positions of the plurality of conductive particles are close, the solder will melt rapidly, and as a result, the plurality of conductive particles can be moved further to the electrode.

上述吸熱峰頂P3t溫度與上述第1放熱峰頂P1t溫度之差之絕對值較佳 為3℃以上,更佳為5℃以上,進而較佳為8℃以上,且較佳為60℃以下,更佳為58℃以下,進而較佳為55℃以下。於該情形時,可使複數個導電性粒子之位置接近,由於複數個導電性粒子之位置接近後,焊料會迅速熔融,因此結果可使複數個導電性粒子進一步移動至電極上。 The absolute value of the difference between the temperature of the endothermic peak top P3t and the temperature of the first exothermic peak top P1t is better It is 3°C or higher, more preferably 5°C or higher, still more preferably 8°C or higher, and preferably 60°C or lower, more preferably 58°C or lower, and still more preferably 55°C or lower. In this case, the positions of a plurality of conductive particles can be brought close. As the positions of the plurality of conductive particles are close, the solder will melt rapidly, and as a result, the plurality of conductive particles can be moved further to the electrode.

上述吸熱峰頂P3t溫度與上述第2放熱峰頂P2t溫度之差之絕對值較佳為5℃以上,更佳為8℃以上,進而較佳為10℃以上,且較佳為60℃以下,更佳為58℃以下,進而較佳為55℃以下。於該情形時,將熔融之焊料配置於電極上後,可使焊料停留於電極上,而進一步增多電極上之焊料量。 The absolute value of the difference between the temperature of the endothermic peak top P3t and the temperature of the second exothermic peak top P2t is preferably 5°C or higher, more preferably 8°C or higher, still more preferably 10°C or higher, and preferably 60°C or lower, It is more preferably 58°C or lower, and still more preferably 55°C or lower. In this case, after disposing the molten solder on the electrode, the solder can stay on the electrode, which further increases the amount of solder on the electrode.

就將焊料更有效率地配置於電極上之觀點而言,如圖1所示,較佳為上述第1放熱峰頂P1t溫度下之放熱峰之峰高度小於上述第2放熱峰頂P2t溫度下之放熱峰之峰高度。 From the viewpoint of disposing the solder on the electrode more efficiently, as shown in FIG. 1, it is preferable that the peak height of the exothermic peak at the temperature of the first exothermic peak P1t is smaller than that at the temperature of the second exothermic peak P2t. The peak height of the exothermic peak.

所謂上述放熱峰頂P1t、P2t溫度及上述吸熱峰頂P3t溫度表示放熱峰P1、P2或吸熱峰P3中之放熱量或吸熱量成為最高之溫度。上述所謂放熱峰P1、P2表示自放熱量自基準線B開始上升之部分(該部分中之溫度為放熱起始溫度)起,至達到上述放熱峰頂P1t、P2t後放熱量降低,放熱量再次開始增加或者放熱量達到基準線B為止之部分。上述所謂吸熱峰P3表示自吸熱量自基準線B開始上升之部分(該部分中之溫度為吸熱起始溫度)起,至達到上述吸熱峰頂P3t後吸熱量降低,吸熱量達到基準線B為止之部分。為了使上述放熱峰頂P1t、P2t溫度與上述吸熱峰頂P3t溫度滿足上述之關係,適當調整熱硬化性成分中之熱硬化性化合物之種類、熱硬化劑之種類、及導電性粒子中之焊料之組成等即可。 The temperature of the exothermic peak tops P1t and P2t and the temperature of the endothermic peak top P3t indicate the temperature at which the exothermic heat or endothermic heat of the exothermic peaks P1, P2 or the endothermic peak P3 becomes the highest. The so-called exothermic peaks P1 and P2 indicate the part where the exothermic heat starts to rise from the reference line B (the temperature in this part is the exothermic start temperature), and the exothermic heat decreases after reaching the exothermic peaks P1t and P2t, and the exothermic heat again The part that starts to increase or the heat release reaches the baseline B. The above-mentioned endothermic peak P3 represents the part where the endothermic heat starts to rise from the reference line B (the temperature in this part is the endothermic starting temperature), and the endothermic heat decreases after reaching the endothermic peak P3t, and the endothermic heat reaches the reference line B The part. In order to make the temperature of the exothermic peak top P1t and P2t and the temperature of the endothermic peak top P3t meet the above relationship, appropriately adjust the type of thermosetting compound in the thermosetting component, the type of thermosetting agent, and the solder in the conductive particles The composition and so on.

就將焊料更有效率地配置於電極上之觀點而言,較佳為源自上述導電性粒子中之焊料之熔融之吸熱峰之高溫側之峰結束溫度低於源自上述熱硬 化性成分之硬化之最高溫側之放熱峰之高溫側之峰結束溫度。源自上述導電性粒子中之焊料之熔融之吸熱峰之高溫側之峰結束溫度為圖1中之吸熱峰P3於高溫側與基準線B相連之溫度。源自上述熱硬化性成分之硬化之最高溫側之放熱峰之高溫側之峰結束溫度為圖1中之放熱峰P2於高溫側與基準線B相連之溫度。 From the viewpoint of disposing the solder more efficiently on the electrode, it is preferable that the end temperature of the peak on the high-temperature side of the endothermic peak derived from the melting of the solder in the conductive particles be lower than that derived from the thermal hardening The end temperature of the peak at the high temperature side of the exothermic peak at the highest temperature side of the hardening of the chemical component. The end temperature of the peak on the high temperature side of the endothermic peak derived from the melting of the solder in the conductive particles is the temperature at which the endothermic peak P3 in FIG. 1 is connected to the reference line B on the high temperature side. The peak end temperature on the high temperature side of the exothermic peak on the highest temperature side of the hardening of the thermosetting component is the temperature at which the exothermic peak P2 in FIG. 1 is connected to the reference line B on the high temperature side.

就將焊料更有效率地配置於電極上之觀點而言,較佳為源自上述導電性粒子中之焊料之熔融之吸熱峰之低溫側之峰起始溫度高於源自上述熱硬化性成分之硬化之最低溫側之放熱峰之低溫側之峰起始溫度。源自上述導電性粒子中之焊料之熔融之吸熱峰之低溫側之峰起始溫度為圖1中之吸熱峰P3於低溫側與基準線B相連之溫度。源自上述熱硬化性成分之硬化之最低溫側之放熱峰之低溫側之峰起始溫度為圖1中之放熱峰P1於低溫側與基準線B相連之溫度。 From the viewpoint of disposing the solder more efficiently on the electrode, it is preferable that the peak start temperature on the low-temperature side of the endothermic peak derived from the melting of the solder in the conductive particles is higher than that derived from the thermosetting component. The peak starting temperature on the low temperature side of the exothermic peak on the lowest temperature side of hardening. The peak starting temperature on the low temperature side of the endothermic peak derived from the melting of the solder in the conductive particles is the temperature at which the endothermic peak P3 in FIG. 1 is connected to the reference line B on the low temperature side. The peak start temperature on the low temperature side of the exothermic peak on the lowest temperature side of the hardening of the above-mentioned thermosetting component is the temperature at which the exothermic peak P1 in FIG. 1 is connected to the reference line B on the low temperature side.

就將焊料更有效率地配置於電極上之觀點而言,就將焊料更有效率地配置於電極上之觀點而言,較佳為源自上述導電性粒子中之焊料之熔融之吸熱峰之高溫側之峰結束溫度低於源自上述熱硬化性成分之硬化之最高溫側之放熱峰之高溫側之峰結束溫度,且源自上述導電性粒子中之焊料之熔融之吸熱峰之低溫側之峰起始溫度高於源自上述熱硬化性成分之硬化之最低溫側之放熱峰之低溫側之峰起始溫度。 From the viewpoint of disposing the solder more efficiently on the electrode, and from the viewpoint of disposing the solder more efficiently on the electrode, the high temperature derived from the endothermic peak of the melting of the solder in the conductive particles is preferred The end temperature of the peak on the side is lower than the end temperature of the peak on the high temperature side of the exothermic peak on the highest temperature side of the hardening of the above-mentioned thermosetting component, and starts from the peak on the low temperature side of the endothermic peak of the melting of the solder in the conductive particles The onset temperature is higher than the peak onset temperature on the low temperature side of the exothermic peak on the lowest temperature side of the hardening of the above-mentioned thermosetting component.

為了更有效率地將焊料配置於電極上,上述導電材料較佳為於25℃下為液狀,且較佳為導電糊。 In order to dispose the solder on the electrode more efficiently, the above-mentioned conductive material is preferably liquid at 25° C., and preferably a conductive paste.

為了更有效率地將焊料配置於電極上,上述導電材料於25℃下之黏度(η25)較佳為20Pa.s以上,更佳為25Pa.s以上,且較佳為600Pa.s以下,更佳為550Pa.s以下。上述導電材料於25℃下之黏度會影響到導電性粒子 或焊料之導電連接初期之移動速度。 In order to arrange the solder on the electrode more efficiently, the viscosity (η25) of the conductive material at 25°C is preferably 20Pa. s or more, more preferably 25Pa. s or more, and preferably 600Pa. s or less, more preferably 550Pa. s or less. The viscosity of the above conductive materials at 25°C will affect the conductive particles Or the initial movement speed of the solder conductive connection.

為了更有效率地將焊料配置於電極上,上述導電材料於25℃下之黏度(η25)相對於上述導電材料於100℃下之黏度(η100)之比較佳為10以上,更佳為80以上,進而較佳為100以上,且較佳為2500以下,更佳為2000以下。上述導電材料於100℃下之黏度會影響到導電性粒子或焊料之導電連接中期之移動速度。若比(η25/η100)為上述下限以上及上述上限以下,則於導電連接時,導電性粒子或焊料自初期至中期會有效率地移動。 In order to arrange the solder on the electrode more efficiently, the viscosity (η25) of the conductive material at 25°C relative to the viscosity (η100) of the conductive material at 100°C is preferably 10 or more, more preferably 80 or more , And more preferably 100 or more, more preferably 2500 or less, more preferably 2000 or less. The viscosity of the above-mentioned conductive material at 100°C will affect the movement speed of the conductive particles or solder in the middle of the conductive connection. If the ratio (η25/η100) is greater than or equal to the above lower limit and less than or equal to the above upper limit, the conductive particles or solder will efficiently move from the initial stage to the middle stage during conductive connection.

上述黏度可使用STRESSTECH(EOLOGICA公司製造)等,於應變控制1rad、頻率1Hz、升溫速度20℃/分鐘、測定溫度範圍25~200℃之條件下進行測定。 The above-mentioned viscosity can be measured under the conditions of strain control 1rad, frequency 1Hz, heating rate 20°C/min, and measurement temperature range 25~200°C using STRESSTECH (manufactured by EOLOGICA), etc.

又,於源自熱硬化性成分之硬化之放熱峰頂P1t溫度下將上述導電材料保持10秒後之黏度較佳為1Pa.s以上,更佳為3Pa.s以上,且較佳為10Pa.s以下,更佳為8Pa.s以下。進而,於源自熱硬化性成分之硬化之放熱峰頂P2t溫度下將上述導電材料保持10秒後之黏度較佳為100Pa.s以上,更佳為110Pa.s以上,且較佳為10000Pa.s以下,更佳為9500Pa.s以下。 In addition, the viscosity of the conductive material after holding the conductive material for 10 seconds at the temperature of the exothermic peak P1t derived from the hardening of the thermosetting component is preferably 1 Pa. s or more, more preferably 3Pa. s or more, and preferably 10Pa. s or less, more preferably 8Pa. s or less. Furthermore, the viscosity of the conductive material after holding the conductive material for 10 seconds at the temperature of the exothermic peak P2t derived from the hardening of the thermosetting component is preferably 100 Pa. s or more, more preferably 110Pa. s or more, and preferably 10000Pa. s or less, more preferably 9500Pa. s or less.

上述導電材料可以導電糊及導電膜等形式使用。上述導電材料較佳為各向異性導電材料。上述導電糊較佳為各向異性導電糊。上述導電膜較佳為各向異性導電膜。上述導電材料可較佳地用於電極之電性連接。上述導電材料較佳為電路連接材料。 The aforementioned conductive material can be used in the form of a conductive paste, a conductive film, and the like. The aforementioned conductive material is preferably an anisotropic conductive material. The aforementioned conductive paste is preferably an anisotropic conductive paste. The above-mentioned conductive film is preferably an anisotropic conductive film. The above-mentioned conductive materials can be preferably used for electrical connection of electrodes. The above-mentioned conductive material is preferably a circuit connection material.

以下,對上述導電材料所含之各成分進行說明。 Hereinafter, each component contained in the aforementioned conductive material will be described.

(導電性粒子) (Conductive particles)

上述導電性粒子將連接對象構件之電極間進行電性連接。上述導電性 粒子於導電部之外表面部分具有焊料。上述導電性粒子可為焊料粒子。上述焊料粒子係由焊料所形成。上述焊料粒子於導電部之外表面部分具有焊料。上述焊料粒子係上述焊料粒子之中心部分及導電部之外表面部分均為焊料之粒子。關於上述焊料粒子,其中心部分及導電部之外表面部分均由焊料所形成。上述導電性粒子可具有基材粒子、及配置於該基材粒子之表面上之導電部。於該情形時,上述導電性粒子於導電部之外表面部分具有焊料。 The said electroconductive particle electrically connects between electrodes of a connection object member. Above conductivity The particles have solder on the outer surface of the conductive part. The aforementioned conductive particles may be solder particles. The above-mentioned solder particles are formed of solder. The solder particles have solder on the outer surface portion of the conductive part. The solder particles are particles in which the center part and the outer surface part of the conductive part of the solder particles are both solder particles. Regarding the above-mentioned solder particles, the central part and the outer surface part of the conductive part are formed of solder. The said electroconductive particle may have a base particle and the electroconductive part arrange|positioned on the surface of this base particle. In this case, the conductive particles have solder on the outer surface of the conductive part.

再者,與使用上述焊料粒子之情形相比,於使用具備未由焊料形成之基材粒子與配置於基材粒子之表面上之焊料部之導電性粒子之情形時,導電性粒子變得難以聚集於電極上,導電性粒子彼此之焊料接合性較低,因此有移動至電極上之導電性粒子變得容易移動至電極外之傾向,且有抑制電極間之錯位之效果亦降低之傾向。因此,上述導電性粒子較佳為焊料粒子。 Furthermore, compared with the case of using the above-mentioned solder particles, when using conductive particles having base particles not formed of solder and a solder portion arranged on the surface of the base particles, conductive particles become difficult Concentrated on the electrode, the solder bonding between the conductive particles is low. Therefore, the conductive particles moving on the electrode tend to easily move outside the electrode, and the effect of suppressing the displacement between the electrodes also tends to decrease. Therefore, the aforementioned conductive particles are preferably solder particles.

就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,較佳為於上述導電性粒子之外表面(焊料之外表面)存在羧基或胺基,較佳為存在羧基,較佳為存在胺基。較佳為經由Si-O鍵、醚鍵、酯鍵或下述式(X)所表示之基而於上述導電性粒子之外表面(焊料之外表面)共價鍵結有含有羧基或胺基之基,更佳為經由醚鍵、酯鍵或下述式(X)所表示之基而於上述導電性粒子之外表面(焊料之外表面)共價鍵結有含有羧基或胺基之基。含有羧基或胺基之基可含有羧基與胺基之兩者。再者,於下述式(X)中,右端部及左端部表示鍵結部位。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, it is preferable that a carboxyl group or an amine group is present on the outer surface of the conductive particles (outside the solder surface), and preferably there is The carboxyl group preferably has an amine group. Preferably, a carboxyl group or an amino group is covalently bonded to the outer surface of the conductive particle (outside the solder surface) via a Si-O bond, an ether bond, an ester bond or a group represented by the following formula (X) The group is more preferably a group containing a carboxyl group or an amino group which is covalently bonded to the outer surface of the conductive particle (outside the solder surface) via an ether bond, an ester bond or a group represented by the following formula (X) . The group containing a carboxyl group or an amino group may contain both a carboxyl group and an amino group. In addition, in the following formula (X), the right end part and the left end part represent bonding sites.

[化1]

Figure 105127115-A0305-02-0013-1
[化1]
Figure 105127115-A0305-02-0013-1

於焊料之表面存在羥基。藉由使該羥基與含有羧基之基進行共價鍵結,可形成較藉由其他配位鍵(螯合配位)等進行鍵結之情形更強之鍵,因此可獲得可降低電極間之連接電阻且可抑制孔隙之產生之導電性粒子。 There are hydroxyl groups on the surface of the solder. By covalently bonding the hydroxyl group and the carboxyl-containing group, it is possible to form a stronger bond than the bonding by other coordination bonds (chelation coordination), etc., so that the Conductive particles that connect resistance and can suppress the generation of pores.

於上述導電性粒子中,焊料之表面與含有羧基之基之鍵結形態可不含配位鍵,亦可不含由螯合配位形成之鍵。 In the above-mentioned conductive particles, the bonding form between the surface of the solder and the carboxyl group-containing group may not contain a coordinate bond or may not contain a bond formed by chelate coordination.

就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,上述導電性粒子較佳為藉由使用具有能夠與羥基反應之官能基及羧基或胺基之化合物(以下有時記作化合物X),使焊料表面之羥基與上述能夠與羥基反應之官能基進行反應而獲得。於上述反應中形成共價鍵。藉由使焊料表面之羥基與上述化合物中之上述能夠與羥基反應之官能基進行反應,可容易地獲得於焊料之表面共價鍵結有含有羧基或胺基之基之導電性粒子,亦可獲得經由醚鍵或酯鍵而於焊料之表面共價鍵結有含有羧基或胺基之基之導電性粒子。藉由使上述焊料表面之羥基與上述能夠與羥基反應之官能基進行反應,可使上述化合物X以共價鍵之形態化學鍵結於焊料之表面。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of pores, the above-mentioned conductive particles are preferably used by using a compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group or amino group (hereinafter Sometimes referred to as compound X), it is obtained by reacting the hydroxyl group on the solder surface with the above-mentioned functional group capable of reacting with the hydroxyl group. In the above reaction, a covalent bond is formed. By reacting the hydroxyl group on the surface of the solder with the above-mentioned functional group capable of reacting with the hydroxyl group in the above-mentioned compound, conductive particles with a carboxyl group or amino group-containing group covalently bonded to the surface of the solder can be easily obtained. Obtain conductive particles having a group containing a carboxyl group or an amino group covalently bonded to the surface of the solder via an ether bond or an ester bond. By reacting the hydroxyl group on the surface of the solder with the functional group capable of reacting with the hydroxyl group, the compound X can be chemically bonded to the surface of the solder in the form of a covalent bond.

作為上述能夠與羥基反應之官能基,可列舉羥基、羧基、酯基及羰基等。較佳為羥基或羧基。上述能夠與羥基反應之官能基可為羥基,亦可為羧基。 Examples of the functional group capable of reacting with the hydroxyl group include a hydroxyl group, a carboxyl group, an ester group, and a carbonyl group. Preferably, it is a hydroxyl group or a carboxyl group. The functional group capable of reacting with the hydroxyl group may be a hydroxyl group or a carboxyl group.

作為具有能夠與羥基反應之官能基之化合物,可列舉:乙醯丙酸、戊 二酸、乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-酮己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六碳烯酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸二酸及十二烷二酸等。較佳為戊二酸或乙醇酸。上述具有能夠與羥基反應之官能基之化合物可僅使用一種,亦可併用兩種以上。上述具有能夠與羥基反應之官能基之化合物較佳為至少具有1個羧基之化合物。 As a compound having a functional group capable of reacting with a hydroxyl group, acetyl propionic acid, pentane Diacid, glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercapto Isobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, capric acid, dodecanoic acid, tetradecanoic acid, pentadecane Acid, hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, isoleic acid, linoleic acid, (9,12,15)-linolenic acid, nineteen Alkanoic acid, arachidic acid, sebacic acid and dodecanedioic acid, etc. Preferably it is glutaric acid or glycolic acid. The compound having a functional group capable of reacting with a hydroxyl group may be used alone or in combination of two or more kinds. The compound having a functional group capable of reacting with a hydroxyl group is preferably a compound having at least one carboxyl group.

上述化合物X較佳為具有助焊作用,上述化合物X較佳為於鍵結於焊料之表面之狀態下具有助焊作用。具有助焊作用之化合物能夠去除焊料表面之氧化膜及電極表面之氧化膜。羧基具有助焊作用。 The above-mentioned compound X preferably has a soldering function, and the above-mentioned compound X preferably has a soldering function when bonded to the surface of the solder. The compound with the effect of soldering can remove the oxide film on the solder surface and the oxide film on the electrode surface. The carboxyl group has a fluxing effect.

作為具有助焊作用之化合物,可列舉:乙醯丙酸、戊二酸、乙醇酸、琥珀酸、5-酮己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸及4-苯基丁酸等。較佳為戊二酸或乙醇酸。上述具有助焊作用之化合物可僅使用一種,亦可併用兩種以上。 Examples of compounds with fluxing effect include: acetylpropionic acid, glutaric acid, glycolic acid, succinic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid , 3-mercaptoisobutyric acid, 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid and 4-phenylbutyric acid, etc. Preferably it is glutaric acid or glycolic acid. Only one kind of the above-mentioned compound having a fluxing effect may be used, or two or more kinds may be used in combination.

就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,較佳為上述化合物X中之上述能夠與羥基反應之官能基為羥基或羧基。上述化合物X中之上述能夠與羥基反應之官能基可為羥基,亦可為羧基。於上述能夠與羥基反應之官能基為羧基之情形時,上述化合物X較佳為至少具有2個羧基。藉由使至少具有2個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,可獲得於焊料之表面共價鍵結有含有羧基之基之導電性粒子。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of pores, it is preferable that the functional group capable of reacting with the hydroxyl group in the compound X is a hydroxyl group or a carboxyl group. The functional group capable of reacting with a hydroxyl group in the compound X may be a hydroxyl group or a carboxyl group. When the functional group capable of reacting with the hydroxyl group is a carboxyl group, the compound X preferably has at least two carboxyl groups. By reacting a part of the carboxyl groups of a compound having at least two carboxyl groups with the hydroxyl groups on the surface of the solder, conductive particles with carboxyl-containing groups covalently bonded to the surface of the solder can be obtained.

上述導電性粒子之製造方法例如具備如下步驟:使用導電性粒子,將該導電性粒子、具有能夠與羥基反應之官能基及羧基之化合物、觸媒及溶劑加以混合。於上述導電性粒子之製造方法中,藉由上述混合步驟,可容易地獲得於焊料之表面共價鍵結有含有羧基之基之導電性粒子。 The manufacturing method of the said electroconductive particle has, for example, the step of using electroconductive particle, and mixing this electroconductive particle, the compound which has a functional group and a carboxyl group which can react with a hydroxyl group, a catalyst, and a solvent. In the manufacturing method of the said electroconductive particle, the electroconductive particle which the group containing a carboxyl group was covalently bonded to the surface of a solder can be obtained easily by the said mixing process.

又,於上述導電性粒子之製造方法中,較佳為使用導電性粒子,將該導電性粒子、上述具有能夠與羥基反應之官能基及羧基之化合物、上述觸媒及上述溶劑加以混合,並進行加熱。藉由混合及加熱步驟,可更容易地獲得於焊料之表面共價鍵結有含有羧基之基之導電性粒子。 In addition, in the above-mentioned method for producing conductive particles, it is preferable to use conductive particles, to mix the conductive particles, the above-mentioned compound having a functional group capable of reacting with a hydroxyl group and a carboxyl group, the above-mentioned catalyst and the above-mentioned solvent, and Heat up. Through the mixing and heating steps, conductive particles with carboxyl-containing groups covalently bonded to the surface of the solder can be more easily obtained.

作為上述溶劑,可列舉:甲醇、乙醇、丙醇及丁醇等醇溶劑;或丙酮、甲基乙基酮、乙酸乙酯、甲苯及二甲苯等。上述溶劑較佳為有機溶劑,更佳為甲苯。上述溶劑可僅使用一種,亦可併用兩種以上。 As said solvent, alcohol solvents, such as methanol, ethanol, propanol, and butanol, or acetone, methyl ethyl ketone, ethyl acetate, toluene, xylene, etc. are mentioned. The above-mentioned solvent is preferably an organic solvent, more preferably toluene. Only one type of the above-mentioned solvent may be used, or two or more types may be used in combination.

作為上述觸媒,可列舉對甲苯磺酸、苯磺酸及10-樟腦磺酸等。上述觸媒較佳為對甲苯磺酸。上述觸媒可僅使用一種,亦可併用兩種以上。 As said catalyst, p-toluenesulfonic acid, benzenesulfonic acid, 10-camphorsulfonic acid, etc. are mentioned. The above-mentioned catalyst is preferably p-toluenesulfonic acid. Only one kind of the above-mentioned catalyst may be used, or two or more kinds may be used in combination.

較佳為於上述混合時進行加熱。加熱溫度較佳為90℃以上,更佳為100℃以上,且較佳為130℃以下,更佳為110℃以下。 It is preferable to heat during the above mixing. The heating temperature is preferably 90°C or higher, more preferably 100°C or higher, and preferably 130°C or lower, and more preferably 110°C or lower.

就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,上述導電性粒子較佳為經由如下步驟而獲得:使用異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應。於上述反應中形成共價鍵。藉由使焊料表面之羥基與上述異氰酸酯化合物進行反應,可容易地獲得於焊料之表面共價鍵結有源自異氰酸酯基之基之氮原子之導電性粒子。藉由使上述焊料表面之羥基與上述異氰酸酯化合物進行反應,可使源自異氰酸酯基之基以共價鍵之形態化學鍵結於焊料之表面。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the conductive particles are preferably obtained through the following steps: using an isocyanate compound, the hydroxyl group on the solder surface is combined with the isocyanate compound reaction. In the above reaction, a covalent bond is formed. By reacting the hydroxyl group on the surface of the solder with the above-mentioned isocyanate compound, it is possible to easily obtain conductive particles in which a nitrogen atom derived from an isocyanate group is covalently bonded to the surface of the solder. By reacting the hydroxyl group on the surface of the solder with the isocyanate compound, the group derived from the isocyanate group can be chemically bonded to the surface of the solder in the form of a covalent bond.

又,可使源自異氰酸酯基之基與矽烷偶合劑容易地進行反應。由於可 容易地獲得上述導電性粒子,因此上述含有羧基之基較佳為藉由使用具有羧基之矽烷偶合劑之反應而導入,或藉由在使用矽烷偶合劑之反應後,使源自矽烷偶合劑之基與至少具有1個羧基之化合物進行反應而導入。上述導電性粒子較佳為藉由使用上述異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後與至少具有1個羧基之化合物進行反應而獲得。 In addition, a group derived from an isocyanate group can be easily reacted with a silane coupling agent. As can The above-mentioned conductive particles are easily obtained. Therefore, the above-mentioned carboxyl-containing group is preferably introduced by a reaction using a silane coupling agent having a carboxyl group, or by reacting with a silane coupling agent to make The group reacts with a compound having at least one carboxyl group to be introduced. The conductive particles are preferably obtained by using the isocyanate compound to react the hydroxyl group on the solder surface with the isocyanate compound and then react with a compound having at least one carboxyl group.

就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,較佳為上述至少具有1個羧基之化合物具有複數個羧基。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of pores, it is preferable that the compound having at least one carboxyl group has a plurality of carboxyl groups.

作為上述異氰酸酯化合物,可列舉二苯基甲烷-4,4'-二異氰酸酯(MDI)、六亞甲基二異氰酸酯(HDI)、甲苯二異氰酸酯(TDI)及異佛酮二異氰酸酯(IPDI)等。亦可使用該等以外之異氰酸酯化合物。使該化合物與焊料之表面進行反應後,使殘留異氰酸酯基與和該殘留異氰酸酯基具有反應性且具有羧基之化合物進行反應,藉此可經由上述式(X)所表示之基而將羧基導入至焊料之表面。 As said isocyanate compound, diphenylmethane-4,4'-diisocyanate (MDI), hexamethylene diisocyanate (HDI), toluene diisocyanate (TDI), isophorone diisocyanate (IPDI), etc. are mentioned. Isocyanate compounds other than these can also be used. After reacting the compound with the surface of the solder, the residual isocyanate group is reacted with a compound that is reactive with the residual isocyanate group and has a carboxyl group, whereby the carboxyl group can be introduced to the surface via the group represented by the above formula (X) The surface of the solder.

作為上述異氰酸酯化合物,亦可使用具有不飽和雙鍵且具有異氰酸酯基之化合物。例如,可列舉異氰酸2-丙烯醯氧基乙酯及甲基丙烯酸2-異氰酸酯基乙酯。藉由使該化合物之異氰酸酯基與焊料之表面進行反應後,與具有對殘存之不飽和雙鍵具有反應性之官能基且具有羧基之化合物進行反應,可經由上述式(X)所表示之基而將羧基導入至焊料之表面。 As the aforementioned isocyanate compound, a compound having an unsaturated double bond and an isocyanate group can also be used. For example, 2-propenoxyethyl isocyanate and 2-isocyanatoethyl methacrylate can be mentioned. By reacting the isocyanate group of the compound with the surface of the solder, and then reacting with a compound having a carboxyl group and a functional group reactive to the remaining unsaturated double bonds, the group represented by the above formula (X) The carboxyl group is introduced to the surface of the solder.

作為上述矽烷偶合劑,可列舉3-異氰酸基丙基三乙氧基矽烷(Shin-Etsu Silicones公司製造之「KBE-9007」)、及3-異氰酸基丙基三甲氧基矽烷(MOMENTIVE公司製造之「Y-5187」)等。上述矽烷偶合劑可僅使用一種,亦可併用兩種以上。 As the above-mentioned silane coupling agent, 3-isocyanatopropyltriethoxysilane ("KBE-9007" manufactured by Shin-Etsu Silicones), and 3-isocyanatopropyltrimethoxysilane ( "Y-5187" manufactured by MOMENTIVE Company) etc. Only one type of the above-mentioned silane coupling agent may be used, or two or more types may be used in combination.

作為上述至少具有1個羧基之化合物,可列舉:乙醯丙酸、戊二酸、 乙醇酸、琥珀酸、蘋果酸、草酸、丙二酸、己二酸、5-酮己酸、3-羥基丙酸、4-胺基丁酸、3-巰基丙酸、3-巰基異丁酸、3-甲硫基丙酸、3-苯基丙酸、3-苯基異丁酸、4-苯基丁酸、癸酸、十二烷酸、十四烷酸、十五烷酸、十六烷酸、9-十六碳烯酸、十七烷酸、硬脂酸、油酸、異油酸、亞麻油酸、(9,12,15)-次亞麻油酸、十九烷酸、花生酸、癸二酸及十二烷二酸等。較佳為戊二酸、己二酸或乙醇酸。上述至少具有1個羧基之化合物可僅使用一種,亦可併用兩種以上。 As the above-mentioned compound having at least one carboxyl group, acetyl propionic acid, glutaric acid, Glycolic acid, succinic acid, malic acid, oxalic acid, malonic acid, adipic acid, 5-ketohexanoic acid, 3-hydroxypropionic acid, 4-aminobutyric acid, 3-mercaptopropionic acid, 3-mercaptoisobutyric acid , 3-methylthiopropionic acid, 3-phenylpropionic acid, 3-phenylisobutyric acid, 4-phenylbutyric acid, capric acid, dodecanoic acid, tetradecanoic acid, pentadecanoic acid, ten Hexadecanoic acid, 9-hexadecenoic acid, heptadecanoic acid, stearic acid, oleic acid, isoleic acid, linoleic acid, (9,12,15)-linolenic acid, nonadenoic acid, Arachidic acid, sebacic acid and dodecanedioic acid, etc. Preferably it is glutaric acid, adipic acid or glycolic acid. The above-mentioned compound having at least one carboxyl group may be used alone or in combination of two or more kinds.

使用上述異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,使具有複數個羧基之化合物之一部分羧基與焊料表面之羥基進行反應,藉此可使含有羧基之基殘存。 After the above isocyanate compound is used to react the hydroxyl groups on the solder surface with the isocyanate compound, a part of the carboxyl groups of the compound having multiple carboxyl groups is reacted with the hydroxyl groups on the solder surface, thereby allowing the carboxyl-containing groups to remain.

於上述導電性粒子之製造方法中,使用導電性粒子,並且使用異氰酸酯化合物,使焊料表面之羥基與上述異氰酸酯化合物進行反應後,與至少具有1個羧基之化合物進行反應,獲得經由上述式(X)所表示之基而於焊料之表面鍵結有含有羧基之基之導電性粒子。於上述導電性粒子之製造方法中,藉由上述之步驟,可容易地獲得於焊料之表面導入有含有羧基之基之導電性粒子。 In the above-mentioned method for producing conductive particles, conductive particles are used, and isocyanate compounds are used, and the hydroxyl groups on the solder surface are reacted with the isocyanate compounds, and then reacted with a compound having at least one carboxyl group to obtain the formula (X ) The conductive particles containing the carboxyl group are bonded to the surface of the solder. In the above-mentioned method for producing conductive particles, conductive particles having a carboxyl group-containing group introduced into the surface of the solder can be easily obtained by the above-mentioned steps.

作為上述導電性粒子之具體之製造方法,可列舉以下之方法。使導電性粒子分散於有機溶劑中,並添加具有異氰酸酯基之矽烷偶合劑。其後,使用導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,使矽烷偶合劑共價鍵結於焊料之表面。繼而,藉由將鍵結於矽烷偶合劑之矽原子上之烷氧基進行水解,而生成羥基。使所生成之羥基與至少具有1個羧基之化合物之羧基進行反應。 As a specific manufacturing method of the said electroconductive particle, the following methods are mentioned. Disperse conductive particles in an organic solvent, and add a silane coupling agent having an isocyanate group. Then, the reaction catalyst of the hydroxyl group and isocyanate group on the solder surface of the conductive particles is used to covalently bond the silane coupling agent to the solder surface. Then, the alkoxy group bonded to the silicon atom of the silane coupling agent is hydrolyzed to generate a hydroxyl group. The generated hydroxyl group is reacted with the carboxyl group of a compound having at least one carboxyl group.

又,作為上述導電性粒子之具體之製造方法,可列舉以下之方法。使 導電性粒子分散於有機溶劑中,並添加具有異氰酸酯基與不飽和雙鍵之化合物。其後,使用導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,而形成共價鍵。其後,對於所導入之不飽和雙鍵,使不飽和雙鍵及具有羧基之化合物與之反應。 Moreover, as a specific manufacturing method of the said electroconductive particle, the following methods are mentioned. Make The conductive particles are dispersed in an organic solvent, and a compound having an isocyanate group and an unsaturated double bond is added. Thereafter, a reaction catalyst of the hydroxyl group on the solder surface of the conductive particle and the isocyanate group is used to form a covalent bond. Thereafter, the introduced unsaturated double bond is reacted with the unsaturated double bond and the compound having a carboxyl group.

作為導電性粒子之焊料表面之羥基與異氰酸酯基之反應觸媒,可列舉:錫系觸媒(二月桂酸二丁基錫等)、胺系觸媒(三乙二胺等)、羧酸酯觸媒(環烷酸鉛、乙酸鉀等)、及三烷基膦觸媒(三乙基膦等)等。 As the reaction catalyst of the hydroxyl group on the solder surface of the conductive particles and the isocyanate group, examples include tin-based catalysts (dibutyltin dilaurate, etc.), amine-based catalysts (triethylenediamine, etc.), and carboxylate catalysts (Lead naphthenate, potassium acetate, etc.), and trialkylphosphine catalysts (triethylphosphine, etc.), etc.

就有效地降低連接構造體中之連接電阻,有效地抑制孔隙之產生之觀點而言,上述至少具有1個羧基之化合物較佳為下述式(1)所表示之化合物。下述式(1)所表示之化合物具有助焊作用。又,下述式(1)所表示之化合物於導入至焊料之表面之狀態下具有助焊作用。 From the viewpoint of effectively reducing the connection resistance in the connection structure and effectively suppressing the generation of voids, the compound having at least one carboxyl group is preferably a compound represented by the following formula (1). The compound represented by the following formula (1) has a fluxing effect. In addition, the compound represented by the following formula (1) has a fluxing effect when it is introduced to the surface of the solder.

Figure 105127115-A0305-02-0018-2
Figure 105127115-A0305-02-0018-2

上述式(1)中,X表示能夠與羥基反應之官能基,R表示碳數1~5之二價有機基。該有機基可含有碳原子、氫原子及氧原子。該有機基可為碳數1~5之二價烴基。上述有機基之主鏈較佳為二價烴基。於該有機基中,可於二價烴基上鍵結有羧基或羥基。於上述式(1)所表示之化合物中例如含有檸檬酸。 In the above formula (1), X represents a functional group capable of reacting with a hydroxyl group, and R represents a divalent organic group having 1 to 5 carbon atoms. The organic group may contain carbon atoms, hydrogen atoms and oxygen atoms. The organic group may be a divalent hydrocarbon group with 1 to 5 carbon atoms. The main chain of the aforementioned organic group is preferably a divalent hydrocarbon group. In the organic group, a carboxyl group or a hydroxyl group may be bonded to the divalent hydrocarbon group. The compound represented by the above formula (1) contains citric acid, for example.

上述至少具有1個羧基之化合物較佳為下述式(1A)或下述式(1B)所表示之化合物。上述至少具有1個羧基之化合物較佳為下述式(1A)所表示之化合物,更佳為下述式(1B)所表示之化合物。 The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A) or the following formula (1B). The compound having at least one carboxyl group is preferably a compound represented by the following formula (1A), and more preferably a compound represented by the following formula (1B).

[化3]

Figure 105127115-A0305-02-0019-3
[化3]
Figure 105127115-A0305-02-0019-3

上述式(1A)中,R表示碳數1~5之二價有機基。上述式(1A)中之R與上述式(1)中之R相同。 In the above formula (1A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1A) is the same as R in the above formula (1).

Figure 105127115-A0305-02-0019-4
Figure 105127115-A0305-02-0019-4

上述式(1B)中,R表示碳數1~5之二價有機基。上述式(1B)中之R與上述式(1)中之R相同。 In the above formula (1B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (1B) is the same as R in the above formula (1).

較佳為於焊料之表面鍵結有下述式(2A)或下述式(2B)所表示之基。較佳為於焊料之表面鍵結有下述式(2A)所表示之基,更佳為鍵結有下述式(2B)所表示之基。再者,於下述式(2A)及下述式(2B)中,左端部表示鍵結部位。 Preferably, the base represented by the following formula (2A) or the following formula (2B) is bonded to the surface of the solder. It is preferable that the base represented by the following formula (2A) is bonded to the surface of the solder, and it is more preferable that the base represented by the following formula (2B) is bonded. In addition, in the following formula (2A) and the following formula (2B), the left end part represents a bonding site.

Figure 105127115-A0305-02-0019-5
Figure 105127115-A0305-02-0019-5

上述式(2A)中,R表示碳數1~5之二價有機基。上述式(2A)中之R與上述式(1)中之R相同。 In the above formula (2A), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2A) is the same as R in the above formula (1).

[化6]

Figure 105127115-A0305-02-0020-6
[化6]
Figure 105127115-A0305-02-0020-6

上述式(2B)中,R表示碳數1~5之二價有機基。上述式(2B)中之R與上述式(1)中之R相同。 In the above formula (2B), R represents a divalent organic group having 1 to 5 carbon atoms. R in the above formula (2B) is the same as R in the above formula (1).

就提高焊料表面之潤濕性之觀點而言,上述至少具有1個羧基之化合物之分子量較佳為10000以下,更佳為1000以下,進而較佳為500以下。 From the viewpoint of improving the wettability of the solder surface, the molecular weight of the compound having at least one carboxyl group is preferably 10,000 or less, more preferably 1,000 or less, and still more preferably 500 or less.

於上述至少具有1個羧基之化合物不為聚合物之情形、及可特定出上述至少具有1個羧基之化合物之結構式之情形時,上述分子量意指可根據該結構式算出之分子量。又,於上述至少具有1個羧基之化合物為聚合物之情形時,意指重量平均分子量。 When the above-mentioned compound having at least one carboxyl group is not a polymer, and when the structural formula of the above-mentioned compound having at least one carboxyl group can be specified, the above-mentioned molecular weight means a molecular weight that can be calculated from the structural formula. In addition, when the compound having at least one carboxyl group is a polymer, it means a weight average molecular weight.

就於導電連接時可有效地提高導電性粒子之凝集性之方面而言,上述導電性粒子較佳為具有導電性粒子本體、及配置於上述導電性粒子本體之表面上之陰離子聚合物。上述導電性粒子較佳為藉由利用陰離子聚合物或成為陰離子聚合物之化合物對導電性粒子本體進行表面處理而獲得。上述導電性粒子較佳為藉由陰離子聚合物或成為陰離子聚合物之化合物處理之表面處理物。上述陰離子聚合物及上述成為陰離子聚合物之化合物分別可僅使用一種,亦可併用兩種以上。上述陰離子聚合物為具有酸性基之聚合物。 In terms of effectively improving the aggregation of conductive particles at the time of conductive connection, the conductive particles preferably have a conductive particle body and an anionic polymer arranged on the surface of the conductive particle body. The above-mentioned conductive particles are preferably obtained by subjecting the conductive particle body to surface treatment with an anionic polymer or an anionic polymer compound. The conductive particles are preferably surface-treated products treated with an anionic polymer or a compound that becomes an anionic polymer. The above-mentioned anionic polymer and the above-mentioned anionic polymer-forming compound may use only one type, or two or more types may be used in combination. The above-mentioned anionic polymer is a polymer having an acidic group.

作為藉由陰離子聚合物對導電性粒子本體進行表面處理之方法,可列舉如下方法:作為陰離子聚合物而使用例如使(甲基)丙烯酸進行共聚合而成之(甲基)丙烯酸系聚合物、由二羧酸與二醇合成且兩末端具有羧基之聚酯聚合物、藉由二羧酸之分子間脫水縮合反應而獲得且兩末端具有羧基之 聚合物、由二羧酸與二胺合成且兩末端具有羧基之聚酯聚合物、及具有羧基之改性聚乙烯醇(日本合成化學公司製造之「Gohsenx T」)等,使陰離子聚合物之羧基與導電性粒子本體表面之羥基進行反應。 As a method of surface-treating the conductive particle body with an anionic polymer, the following methods can be cited: as an anionic polymer, for example, a (meth)acrylic polymer obtained by copolymerizing (meth)acrylic acid, A polyester polymer synthesized from dicarboxylic acid and diol and having carboxyl groups at both ends, obtained by the intermolecular dehydration condensation reaction of dicarboxylic acid and having carboxyl groups at both ends Polymers, polyester polymers synthesized from dicarboxylic acids and diamines with carboxyl groups at both ends, and modified polyvinyl alcohols with carboxyl groups (“Gohsenx T” manufactured by Nippon Synthetic Chemical Co., Ltd.), etc., make anionic polymers The carboxyl group reacts with the hydroxyl group on the surface of the conductive particle body.

作為上述陰離子聚合物之陰離子部分,可列舉上述羧基,除此以外,可列舉甲苯磺醯基(p-H3CC6H4S(=O)2-)、磺酸根離子基(-SO3 -)、及磷酸根離子基(-PO4 -)等。 The anionic portion of the anionic polymer include a carboxyl group, in addition, include toluene sulfonic acyl (pH 3 CC 6 H 4 S (= O) 2 -), sulfonate ion group (-SO 3 -) and phosphate ion group (-PO 4 -) and the like.

又,作為表面處理之其他方法,可列舉如下方法:使用具有與導電性粒子本體表面之羥基進行反應之官能基,進而具有可藉由加成、縮合反應而聚合之官能基之化合物,使該化合物於導電性粒子本體之表面上進行聚合物化。作為與導電性粒子本體表面之羥基進行反應之官能基,可列舉羧基、及異氰酸酯基等,作為藉由加成、縮合反應進行聚合之官能基,可列舉羥基、羧基、胺基、及(甲基)丙烯醯基。 In addition, as another method of surface treatment, the following method can be exemplified: using a compound having a functional group that reacts with the hydroxyl group on the surface of the conductive particle body, and further having a functional group that can be polymerized by addition or condensation reaction, to make the The compound is polymerized on the surface of the conductive particle body. Examples of the functional groups that react with the hydroxyl groups on the surface of the conductive particles include carboxyl groups and isocyanate groups. Examples of functional groups that undergo polymerization by addition and condensation reactions include hydroxyl groups, carboxyl groups, amine groups, and (formaldehyde). Base) Acrylic acid base.

上述陰離子聚合物之重量平均分子量較佳為2000以上,更佳為3000以上,且較佳為10000以下,更佳為8000以下。若上述重量平均分子量為上述下限以上及上述上限以下,則可對導電性粒子之表面導入充分量之電荷、及助焊性。藉此,於導電連接時可有效地提高導電性粒子之凝集性,且於連接對象構件之連接時可有效地去除電極表面之氧化膜。 The weight average molecular weight of the anionic polymer is preferably 2,000 or more, more preferably 3,000 or more, and preferably 10,000 or less, and more preferably 8,000 or less. If the weight average molecular weight is greater than or equal to the aforementioned lower limit and less than or equal to the aforementioned upper limit, a sufficient amount of charge and fluxing properties can be introduced to the surface of the conductive particles. Thereby, the agglomeration of conductive particles can be effectively improved during the conductive connection, and the oxide film on the electrode surface can be effectively removed during the connection of the connection target member.

若上述重量平均分子量為上述下限以上及上述上限以下,則容易於導電性粒子本體之表面上配置陰離子聚合物,於導電連接時可有效地提高焊料粒子之凝集性,而可將導電性粒子更有效率地配置於電極上。 If the weight average molecular weight is above the above lower limit and below the above upper limit, it is easy to dispose an anionic polymer on the surface of the conductive particle body, which can effectively improve the agglomeration of solder particles during conductive connection, and the conductive particles can be more Efficiently arranged on the electrode.

上述重量平均分子量表示藉由凝膠滲透層析法(GPC)所測得之以聚苯乙烯換算之重量平均分子量。 The above-mentioned weight average molecular weight means a weight average molecular weight measured by gel permeation chromatography (GPC) in terms of polystyrene.

陰離子聚合物之重量平均分子量可藉由將導電性粒子中之焊料溶 解,利用不引起陰離子聚合物之分解之稀鹽酸等去除導電性粒子後,測定殘存之陰離子聚合物之重量平均分子量而求出。 The weight average molecular weight of the anionic polymer can be obtained by dissolving the solder in the conductive particles The solution is obtained by measuring the weight average molecular weight of the remaining anionic polymer after removing the conductive particles with dilute hydrochloric acid which does not cause decomposition of the anionic polymer.

關於陰離子聚合物對導電性粒子之表面之導入量,導電性粒子每1g之酸值較佳為1mgKOH以上,更佳為2mgKOH以上,且較佳為10mgKOH以下,更佳為6mgKOH以下。 Regarding the introduction amount of the anionic polymer to the surface of the conductive particles, the acid value per 1 g of the conductive particles is preferably 1 mgKOH or more, more preferably 2 mgKOH or more, and preferably 10 mgKOH or less, and more preferably 6 mgKOH or less.

上述酸值可藉由下述方式進行測定。將導電性粒子1g添加至丙酮36g中,藉由超音波使其分散1分鐘。其後,使用酚酞作為指示劑,利用0.1mol/L之氫氧化鉀乙醇溶液進行滴定。 The above-mentioned acid value can be measured by the following method. 1 g of conductive particles were added to 36 g of acetone, and ultrasonically dispersed for 1 minute. After that, using phenolphthalein as an indicator, titration was performed with a 0.1 mol/L potassium hydroxide ethanol solution.

繼而,一面參照圖式,一面對導電性粒子之具體例進行說明。 Then, referring to the drawings, a specific example of the conductive particles will be described.

圖5係表示可用於導電材料之導電性粒子之第1例之剖面圖。 Fig. 5 is a cross-sectional view showing a first example of conductive particles that can be used for conductive materials.

圖5所示之導電性粒子21為焊料粒子。導電性粒子21係整體由焊料形成。導電性粒子21於核中不具有基材粒子,並非核殼粒子。導電性粒子21之中心部分及導電部之外表面部分均由焊料所形成。 The conductive particles 21 shown in FIG. 5 are solder particles. The conductive particles 21 are entirely formed of solder. The conductive particles 21 do not have substrate particles in the core, and are not core-shell particles. Both the center part and the outer surface part of the conductive part of the conductive particle 21 are formed by solder.

圖6係表示可用於導電材料之導電性粒子之第2例之剖面圖。 Fig. 6 is a cross-sectional view showing a second example of conductive particles that can be used for conductive materials.

圖6所示之導電性粒子31具備基材粒子32、及配置於基材粒子32之表面上之導電部33。導電部33被覆基材粒子32之表面。導電性粒子31係基材粒子32之表面被導電部33所被覆之被覆粒子。 The conductive particle 31 shown in FIG. 6 includes a base particle 32 and a conductive portion 33 arranged on the surface of the base particle 32. The conductive portion 33 covers the surface of the substrate particle 32. The conductive particles 31 are coated particles in which the surface of the substrate particle 32 is covered with the conductive portion 33.

導電部33具有第2導電部33A、及焊料部33B(第1導電部)。導電性粒子31於基材粒子32與焊料部33B之間具備第2導電部33A。因此,導電性粒子31具備基材粒子32、配置於基材粒子32之表面上之第2導電部33A、及配置於第2導電部33A之外表面上之焊料部33B。 The conductive portion 33 has a second conductive portion 33A and a solder portion 33B (first conductive portion). The conductive particle 31 includes a second conductive portion 33A between the base particle 32 and the solder portion 33B. Therefore, the conductive particle 31 includes the base particle 32, the second conductive portion 33A arranged on the surface of the base particle 32, and the solder portion 33B arranged on the outer surface of the second conductive portion 33A.

圖7係表示可用於導電材料之導電性粒子之第3例之剖面圖。 Fig. 7 is a cross-sectional view showing a third example of conductive particles that can be used for conductive materials.

如上所述,導電性粒子31中之導電部33具有2層構造。圖7所示之導電 性粒子41具有焊料部42作為單層之導電部。導電性粒子41具備基材粒子32、及配置於基材粒子32之表面上之焊料部42。 As described above, the conductive portion 33 in the conductive particle 31 has a two-layer structure. Conductivity shown in Figure 7 The sexual particles 41 have a solder portion 42 as a single-layer conductive portion. The conductive particle 41 includes a base particle 32 and a solder portion 42 arranged on the surface of the base particle 32.

作為上述基材粒子,可列舉:樹脂粒子、除金屬粒子以外之無機粒子、有機無機混合粒子及金屬粒子等。上述基材粒子較佳為除金屬以外之基材粒子,較佳為樹脂粒子、除金屬粒子以外之無機粒子或有機無機混合粒子。上述基材粒子可為銅粒子。上述基材粒子可具有核及配置於該核之表面上之殼,可為核殼粒子。上述核可為有機核,上述殼可為無機殼。 Examples of the substrate particles include resin particles, inorganic particles other than metal particles, organic-inorganic hybrid particles, and metal particles. The above-mentioned substrate particles are preferably substrate particles other than metals, preferably resin particles, inorganic particles other than metal particles, or organic-inorganic hybrid particles. The aforementioned substrate particles may be copper particles. The substrate particles may have a core and a shell arranged on the surface of the core, and may be core-shell particles. The core may be an organic core, and the shell may be an inorganic shell.

作為用以形成上述樹脂粒子之樹脂,可較佳地使用各種有機物。作為用以形成上述樹脂粒子之樹脂,例如可列舉:聚乙烯、聚丙烯、聚苯乙烯、聚氯乙烯、聚偏二氯乙烯、聚異丁烯、聚丁二烯等聚烯烴樹脂;聚甲基丙烯酸甲酯及聚丙烯酸甲酯等丙烯酸系樹脂;聚碳酸酯、聚醯胺、酚甲醛樹脂、三聚氰胺甲醛樹脂、苯胍胺甲醛樹脂、脲甲醛樹脂、酚系樹脂、三聚氰胺樹脂、苯胍胺樹脂、脲樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、聚對苯二甲酸乙二酯、聚碸、聚苯醚、聚縮醛、聚醯亞胺、聚醯胺醯亞胺、聚醚醚酮、聚醚碸、二乙烯基苯聚合物、及二乙烯基苯系共聚物等。作為上述二乙烯基苯系共聚物等,可列舉二乙烯基苯-苯乙烯共聚物及二乙烯基苯-(甲基)丙烯酸酯共聚物等。由於可將上述樹脂粒子之硬度容易地控制於較佳之範圍內,因此用以形成上述樹脂粒子之樹脂較佳為使一種或兩種以上之具有乙烯性不飽和基之聚合性單體進行聚合而成之聚合物。 As the resin for forming the above-mentioned resin particles, various organic substances can be preferably used. Examples of resins used to form the resin particles include polyolefin resins such as polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyisobutylene, and polybutadiene; polymethacrylic acid Acrylic resins such as methyl ester and polymethyl acrylate; polycarbonate, polyamide, phenol formaldehyde resin, melamine formaldehyde resin, benzoguanamine formaldehyde resin, urea formaldehyde resin, phenol resin, melamine resin, benzoguanamine resin, Urea resin, epoxy resin, unsaturated polyester resin, saturated polyester resin, polyethylene terephthalate, polysulfide, polyphenylene ether, polyacetal, polyimide, polyimide imide, Polyether ether ketone, polyether agglomerate, divinylbenzene polymer, and divinylbenzene copolymer, etc. As said divinylbenzene copolymer etc., a divinylbenzene-styrene copolymer, a divinylbenzene-(meth)acrylate copolymer, etc. are mentioned. Since the hardness of the resin particles can be easily controlled within a preferred range, the resin used to form the resin particles is preferably made by polymerizing one or two or more polymerizable monomers with ethylenically unsaturated groups. Chengzhi polymer.

於使具有乙烯性不飽和基之聚合性單體進行聚合而獲得上述樹脂粒子之情形時,作為該具有乙烯性不飽和基之聚合性單體,可列舉非交聯性之單體與交聯性之單體。 In the case of polymerizing a polymerizable monomer having an ethylenically unsaturated group to obtain the resin particles, examples of the polymerizable monomer having an ethylenically unsaturated group include non-crosslinkable monomers and crosslinking The monomer of sex.

作為上述非交聯性之單體,例如可列舉:苯乙烯、α-甲基苯乙烯等苯 乙烯系單體;(甲基)丙烯酸、順丁烯二酸、順丁烯二酸酐等含羧基之單體;(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸月桂酯、(甲基)丙烯酸鯨蠟酯、(甲基)丙烯酸硬脂酯、(甲基)丙烯酸環己酯、(甲基)丙烯酸異酯等(甲基)丙烯酸烷基酯化合物;(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸甘油酯、聚氧乙烯(甲基)丙烯酸酯、(甲基)丙烯酸縮水甘油酯等含氧原子之(甲基)丙烯酸酯化合物;(甲基)丙烯腈等含腈單體;甲基乙烯醚、乙基乙烯醚、丙基乙烯醚等乙烯醚化合物;乙酸乙烯酯、丁酸乙烯酯、月桂酸乙烯酯、硬脂酸乙烯酯等酸乙烯酯化合物;乙烯、丙烯、異戊二烯、丁二烯等不飽和烴;(甲基)丙烯酸三氟甲酯、(甲基)丙烯酸五氟乙酯、氯乙烯、氟乙烯、氯苯乙烯等含鹵素單體等。 As the above-mentioned non-crosslinkable monomers, for example, benzene such as styrene and α-methylstyrene Vinyl monomers; (meth)acrylic acid, maleic acid, maleic anhydride and other carboxyl-containing monomers; (meth)acrylate, ethyl (meth)acrylate, (meth)acrylic acid Propyl ester, butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, lauryl (meth)acrylate, cetyl (meth)acrylate, stearyl (meth)acrylate, ( Alkyl (meth)acrylate compounds such as cyclohexyl methacrylate and isoester (meth)acrylate; 2-hydroxyethyl (meth)acrylate, glycerol (meth)acrylate, polyoxyethylene (meth)acrylate (Meth)acrylate compounds containing oxygen atoms such as acrylate and glycidyl (meth)acrylate; nitrile monomers such as (meth)acrylonitrile; methyl vinyl ether, ethyl vinyl ether, propyl Vinyl ether compounds such as vinyl ether; acid vinyl ester compounds such as vinyl acetate, vinyl butyrate, vinyl laurate, and vinyl stearate; unsaturated hydrocarbons such as ethylene, propylene, isoprene, butadiene; Halogen-containing monomers such as trifluoromethyl meth)acrylate, pentafluoroethyl (meth)acrylate, vinyl chloride, vinyl fluoride, and chlorostyrene.

作為上述交聯性之單體,例如可列舉:四羥甲基甲烷四(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三(甲基)丙烯酸甘油酯、二(甲基)丙烯酸甘油酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、(聚)四亞甲基二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯等多官能(甲基)丙烯酸酯化合物;(異)氰尿酸三烯丙酯、偏苯三酸三烯丙酯、二乙烯基苯、鄰苯二甲酸二烯丙酯、二烯丙基丙烯醯胺、二烯丙基醚;及γ-(甲基)丙烯醯氧基丙基三甲氧基矽烷、三甲氧基矽烷基苯乙烯、乙烯基三甲氧基矽烷等含矽烷單體等。 Examples of the above-mentioned crosslinkable monomer include: tetramethylolmethane tetra(meth)acrylate, tetramethylolmethane tri(meth)acrylate, and tetramethylolmethane di(meth)acrylic acid Ester, trimethylolpropane tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate, dipentaerythritol penta(meth)acrylate, glyceryl tri(meth)acrylate, di(meth)acrylic acid Glycerides, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate, (poly)tetramethylene glycol di(meth)acrylate, 1,4- Multifunctional (meth)acrylate compounds such as butanediol di(meth)acrylate; triallyl (iso)cyanurate, triallyl trimellitate, divinylbenzene, diphthalate Allyl ester, diallyl acrylamide, diallyl ether; and γ-(meth)acryloxypropyltrimethoxysilane, trimethoxysilylstyrene, vinyltrimethoxysilane Containing silane monomers, etc.

藉由利用公知之方法使上述具有乙烯性不飽和基之聚合性單體進行聚合,可獲得上述樹脂粒子。作為該方法,例如可列舉於自由基聚合起始 劑之存在下進行懸浮聚合之方法、及使用非交聯之種粒子與自由基聚合起始劑一併使單體膨潤而進行聚合之方法等。 The above-mentioned resin particles can be obtained by polymerizing the above-mentioned polymerizable monomer having an ethylenically unsaturated group by a known method. As this method, for example, it can be listed in the initiation of radical polymerization The method of carrying out suspension polymerization in the presence of the agent, and the method of polymerizing the monomer by using non-crosslinked seed particles together with a radical polymerization initiator to swell the monomer.

於上述基材粒子為除金屬以外之無機粒子或有機無機混合粒子之情形時,作為用以形成基材粒子之無機物,可列舉:二氧化矽、氧化鋁、鈦酸鋇、氧化鋯及碳黑等。上述無機物較佳為不為金屬。作為上述由二氧化矽形成之粒子,並無特別限定,例如可列舉藉由將具有2個以上水解性之烷氧基矽烷基之矽化合物進行水解而形成交聯聚合物粒子後,視需要進行煅燒而獲得之粒子。作為上述有機無機混合粒子,例如可列舉由經交聯之烷氧基矽烷基聚合物與丙烯酸系樹脂所形成之有機無機混合粒子等。 When the above-mentioned substrate particles are inorganic particles or organic-inorganic mixed particles other than metals, examples of inorganic substances used to form the substrate particles include silica, alumina, barium titanate, zirconia, and carbon black Wait. The above-mentioned inorganic substance is preferably not a metal. The particles formed of silicon dioxide are not particularly limited. For example, a silicon compound having two or more hydrolyzable alkoxysilyl groups is hydrolyzed to form cross-linked polymer particles, and then as needed Particles obtained by calcination. Examples of the organic-inorganic hybrid particles include organic-inorganic hybrid particles formed of a crosslinked alkoxysilyl polymer and acrylic resin.

於上述基材粒子為金屬粒子之情形時,作為用以形成該金屬粒子之金屬,可列舉:銀、銅、鎳、矽、金及鈦等。於上述基材粒子為金屬粒子之情形時,該金屬粒子較佳為銅粒子。但較佳為上述基材粒子不為金屬粒子。 In the case where the aforementioned substrate particles are metal particles, examples of the metal used to form the metal particles include silver, copper, nickel, silicon, gold, and titanium. When the aforementioned substrate particles are metal particles, the metal particles are preferably copper particles. However, it is preferable that the aforementioned substrate particles are not metal particles.

上述基材粒子之粒徑較佳為0.1μm以上,更佳為1μm以上,進而較佳為1.5μm以上,尤佳為2μm以上,且較佳為100μm以下,更佳為50μm以下,進而較佳為40μm以下,進而較佳為20μm以下,進而較佳為10μm以下,尤佳為5μm以下,最佳為3μm以下。若上述基材粒子之粒徑為上述下限以上,則導電性粒子與電極之接觸面積變大,因此可進一步提高電極間之導通可靠性,而可進一步降低經由導電性粒子所連接之電極間之連接電阻。若上述基材粒子之粒徑為上述上限以下,則導電性粒子容易被充分壓縮,可進一步降低電極間之連接電阻,進而可進一步減小電極間之間隔。 The particle size of the substrate particles is preferably 0.1 μm or more, more preferably 1 μm or more, still more preferably 1.5 μm or more, particularly preferably 2 μm or more, and preferably 100 μm or less, more preferably 50 μm or less, and still more preferably It is 40 μm or less, more preferably 20 μm or less, still more preferably 10 μm or less, particularly preferably 5 μm or less, and most preferably 3 μm or less. If the particle size of the substrate particles is greater than or equal to the above lower limit, the contact area between the conductive particles and the electrode becomes larger. Therefore, the reliability of conduction between the electrodes can be further improved, and the gap between the electrodes connected via the conductive particles can be further reduced. Connect resistance. If the particle size of the substrate particles is equal to or less than the above upper limit, the conductive particles can be easily compressed sufficiently, the connection resistance between the electrodes can be further reduced, and the distance between the electrodes can be further reduced.

上述基材粒子之粒徑於基材粒子為真球狀之情形時表示直徑,於基材粒子不為真球狀之情形時表示最大直徑。 The particle diameter of the aforementioned substrate particle represents the diameter when the substrate particle is a true spherical shape, and represents the maximum diameter when the substrate particle is not a true spherical shape.

上述基材粒子之粒徑尤佳為2μm以上、5μm以下。若上述基材粒子 之粒徑為2μm以上、5μm以下之範圍內,則可進一步減小電極間之間隔,且即便加厚導電部之厚度,亦可獲得較小之導電性粒子。 The particle size of the aforementioned substrate particles is particularly preferably 2 μm or more and 5 μm or less. If the above substrate particles If the particle size is within the range of 2μm or more and 5μm or less, the distance between the electrodes can be further reduced, and even if the thickness of the conductive part is increased, smaller conductive particles can be obtained.

於上述基材粒子之表面上形成導電部之方法、及於上述基材粒子之表面上或上述第2導電部之表面上形成焊料部之方法並無特別限定。作為形成上述導電部及上述焊料部之方法,例如可列舉利用無電解鍍覆之方法、利用電鍍之方法、利用物理碰撞之方法、利用機械化學反應之方法、利用物理蒸鍍或物理吸附之方法、及將含有金屬粉末或金屬粉末與黏合劑之糊塗佈於基材粒子之表面之方法等。較佳為利用無電解鍍覆、電鍍或物理碰撞之方法。作為上述利用物理蒸鍍之方法,可列舉真空蒸鍍、離子鍍覆及離子濺鍍等方法。又,於上述利用物理碰撞之方法中,例如使用Thetacomposer(德壽工作所公司製造)等。 The method of forming a conductive part on the surface of the said base material particle, and the method of forming a solder part on the surface of the said base particle or the surface of the said 2nd conductive part are not specifically limited. As a method of forming the conductive portion and the solder portion, for example, a method using electroless plating, a method using electroplating, a method using physical collision, a method using mechanochemical reaction, a method using physical vapor deposition or physical adsorption can be mentioned. , And a method of coating the surface of the substrate particle with a paste containing metal powder or metal powder and a binder. Preferably, methods using electroless plating, electroplating or physical collision are used. As the method using the physical vapor deposition described above, methods such as vacuum vapor deposition, ion plating, and ion sputtering can be cited. In addition, in the above-mentioned method of using physical collision, for example, Thetacomposer (manufactured by Tokuju Works Co., Ltd.) is used.

上述基材粒子之熔點較佳為高於上述導電部及上述焊料部之熔點。上述基材粒子之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,尤佳為超過450℃。再者,上述基材粒子之熔點亦可未達400℃。上述基材粒子之熔點亦可為160℃以下。上述基材粒子之軟化點較佳為260℃以上。上述基材粒子之軟化點亦可未達260℃。 The melting point of the substrate particle is preferably higher than the melting point of the conductive portion and the solder portion. The melting point of the substrate particles is preferably more than 160°C, more preferably more than 300°C, still more preferably more than 400°C, and particularly preferably more than 450°C. Furthermore, the melting point of the aforementioned substrate particles may not reach 400°C. The melting point of the aforementioned substrate particles may be 160°C or lower. The softening point of the substrate particles is preferably 260°C or higher. The softening point of the aforementioned substrate particles may not reach 260°C.

上述導電性粒子可具有單層之焊料部。上述導電性粒子亦可具有複數層之導電部(焊料部、第2導電部)。即,於上述導電性粒子中,可積層2層以上之導電部。於上述導電部為2層以上之情形時,上述導電性粒子較佳為於導電部之外表面部分具有焊料。 The said electroconductive particle may have a single-layer solder part. The above-mentioned conductive particles may have a plurality of layers of conductive parts (solder part, second conductive part). That is, in the above-mentioned conductive particles, two or more layers of conductive parts can be laminated. When the conductive part has two or more layers, the conductive particles preferably have solder on the outer surface of the conductive part.

上述焊料較佳為熔點為450℃以下之金屬(低熔點金屬)。上述焊料部較佳為熔點為450℃以下之金屬層(低熔點金屬層)。上述低熔點金屬層為含有低熔點金屬之層。上述導電性粒子中之焊料較佳為熔點為450℃以下之金屬 粒子(低熔點金屬粒子)。上述低熔點金屬粒子為含有低熔點金屬之粒子。該所謂低熔點金屬表示熔點為450℃以下之金屬。低熔點金屬之熔點較佳為300℃以下,更佳為160℃以下。又,上述導電性粒子中之焊料較佳為含有錫。上述焊料部所含之金屬100重量%中及上述導電性粒子中之焊料所含之金屬100重量%中,錫之含量較佳為30重量%以上,更佳為40重量%以上,進而較佳為70重量%以上,尤佳為90重量%以上。若上述導電性粒子中之焊料所含之錫之含量為上述下限以上,則導電性粒子與電極之導通可靠性進一步提高。 The above-mentioned solder is preferably a metal (low melting point metal) having a melting point of 450°C or less. The solder portion is preferably a metal layer (low melting point metal layer) having a melting point of 450°C or less. The aforementioned low melting point metal layer is a layer containing a low melting point metal. The solder in the conductive particles is preferably a metal with a melting point of 450°C or less Particles (low melting point metal particles). The aforementioned low melting point metal particles are particles containing low melting point metals. The so-called low melting point metal refers to a metal having a melting point of 450°C or less. The melting point of the low melting point metal is preferably 300°C or less, more preferably 160°C or less. In addition, the solder in the conductive particles preferably contains tin. In 100% by weight of the metal contained in the solder portion and 100% by weight of the metal contained in the solder in the conductive particles, the content of tin is preferably 30% by weight or more, more preferably 40% by weight or more, and more preferably It is 70% by weight or more, particularly preferably 90% by weight or more. If the content of tin contained in the solder in the conductive particles is greater than or equal to the above lower limit, the reliability of conduction between the conductive particles and the electrode is further improved.

再者,上述錫之含量可使用高頻電感耦合電漿發射光譜分析裝置(堀場製作所公司製造之「ICP-AES」)、或螢光X射線分析裝置(島津製作所公司製造之「EDX-800HS」)等進行測定。 In addition, the content of tin can use a high frequency inductively coupled plasma emission spectrometer ("ICP-AES" manufactured by Horiba) or a fluorescent X-ray analyzer ("EDX-800HS" manufactured by Shimadzu) ) And so on.

藉由使用上述導電部之外表面部分具有焊料之導電性粒子,焊料熔融而與電極接合,焊料使電極間導通。例如,由於焊料與電極容易進行面接觸而非點接觸,因此連接電阻變低。又,藉由使用導電部之外表面部分具有焊料之導電性粒子,焊料與電極之接合強度變高,結果變得更難以產生焊料與電極之剝離,導通可靠性有效地提高。 By using conductive particles having solder on the outer surface of the conductive portion, the solder melts and joins the electrodes, and the solder conducts the electrodes. For example, since the solder and the electrode easily make surface contact rather than point contact, the connection resistance becomes low. In addition, by using conductive particles having solder on the outer surface of the conductive portion, the bonding strength between the solder and the electrode becomes higher, and as a result, it becomes more difficult to cause peeling of the solder and the electrode, and the conduction reliability is effectively improved.

構成上述焊料部及上述焊料粒子之低熔點金屬並無特別限定。該低熔點金屬較佳為錫、或含有錫之合金。該合金可列舉:錫-銀合金、錫-銅合金、錫-銀-銅合金、錫-鉍合金、錫-鋅合金、錫-銦合金等。就對電極之潤濕性優異之方面而言,上述低熔點金屬較佳為錫、錫-銀合金、錫-銀-銅合金、錫-鉍合金、錫-銦合金。更佳為錫-鉍合金、錫-銦合金。 The low melting point metal constituting the solder portion and the solder particles is not particularly limited. The low melting point metal is preferably tin or an alloy containing tin. Examples of the alloy include tin-silver alloy, tin-copper alloy, tin-silver-copper alloy, tin-bismuth alloy, tin-zinc alloy, tin-indium alloy, and the like. In terms of excellent wettability of the counter electrode, the aforementioned low melting point metal is preferably tin, tin-silver alloy, tin-silver-copper alloy, tin-bismuth alloy, and tin-indium alloy. More preferred are tin-bismuth alloys and tin-indium alloys.

基於JIS Z3001:焊接用語,構成上述焊料(焊料部)之材料較佳為液相線為450℃以下之熔填材料。作為上述焊料之組成,例如可列舉含有鋅、金、 銀、鉛、銅、錫、鉍、銦等之金屬組成。較佳為低熔點且無鉛之錫-銦系(117℃共晶)、或錫-鉍系(139℃共晶)。即,上述焊料較佳為不含鉛,且較佳為含有錫與銦之焊料、或含有錫與鉍之焊料。 Based on JIS Z3001: soldering terms, the material constituting the above-mentioned solder (solder portion) is preferably a filler material having a liquidus line of 450°C or less. As the composition of the above solder, for example, zinc, gold, Metal composition of silver, lead, copper, tin, bismuth, indium, etc. Preferably, it is a low melting point and lead-free tin-indium system (117°C eutectic) or tin-bismuth system (139°C eutectic). That is, the above-mentioned solder preferably does not contain lead, and is preferably a solder containing tin and indium, or a solder containing tin and bismuth.

為了進一步提高上述焊料與電極之接合強度,上述導電性粒子中之焊料亦可含有鎳、銅、銻、鋁、鋅、鐵、金、鈦、磷、鍺、碲、鈷、鉍、錳、鉻、鉬、鈀等金屬。又,就進一步提高焊料與電極之接合強度之觀點而言,上述導電性粒子中之焊料較佳為含有鎳、銅、銻、鋁或鋅。就更進一步提高焊料部或導電性粒子中之焊料與電極之接合強度之觀點而言,用以提高接合強度之該等金屬之含量於上述導電性粒子中之焊料100重量%中,較佳為0.0001重量%以上,且較佳為1重量%以下。 In order to further improve the bonding strength between the solder and the electrode, the solder in the conductive particles may also contain nickel, copper, antimony, aluminum, zinc, iron, gold, titanium, phosphorus, germanium, tellurium, cobalt, bismuth, manganese, and chromium. , Molybdenum, Palladium and other metals. In addition, from the viewpoint of further enhancing the bonding strength between the solder and the electrode, the solder in the conductive particles preferably contains nickel, copper, antimony, aluminum, or zinc. From the viewpoint of further improving the bonding strength between the solder in the solder portion or the conductive particles and the electrode, the content of these metals for increasing the bonding strength is in 100% by weight of the solder in the conductive particles, preferably 0.0001% by weight or more, and preferably 1% by weight or less.

上述第2導電部之熔點較佳為高於上述焊料部之熔點。上述第2導電部之熔點較佳為超過160℃,更佳為超過300℃,進而較佳為超過400℃,進而更佳為超過450℃,尤佳為超過500℃,最佳為超過600℃。上述焊料部因熔點較低而於導電連接時熔融。上述第2導電部較佳為於導電連接時不會熔融。上述導電性粒子較佳為使焊料熔融而使用,較佳為使上述焊料部熔融而使用,較佳為使上述焊料部熔融且不使上述第2導電部熔融而使用。藉由上述第2導電部之熔點高於上述焊料部之熔點,於導電連接時可不使上述第2導電部熔融而僅使上述焊料部熔融。 The melting point of the second conductive portion is preferably higher than the melting point of the solder portion. The melting point of the second conductive part is preferably more than 160°C, more preferably more than 300°C, still more preferably more than 400°C, still more preferably more than 450°C, particularly preferably more than 500°C, most preferably more than 600°C . The above-mentioned solder part melts during conductive connection due to its low melting point. It is preferable that the above-mentioned second conductive portion does not melt during conductive connection. The conductive particles are preferably used by melting solder, preferably by melting the solder portion, and preferably by melting the solder portion without melting the second conductive portion. Since the melting point of the second conductive portion is higher than the melting point of the solder portion, it is possible to melt only the solder portion without melting the second conductive portion during conductive connection.

上述焊料部之熔點與上述第2導電部之熔點之差之絕對值超過0℃,較佳為5℃以上,更佳為10℃以上,進而較佳為30℃以上,尤佳為50℃以上,最佳為100℃以上。 The absolute value of the difference between the melting point of the solder portion and the melting point of the second conductive portion exceeds 0°C, preferably 5°C or higher, more preferably 10°C or higher, still more preferably 30°C or higher, and particularly preferably 50°C or higher , The best temperature is above 100°C.

上述第2導電部較佳為含有金屬。構成上述第2導電部之金屬並無特別限定。作為該金屬,例如可列舉金、銀、銅、鉑、鈀、鋅、鉛、鋁、鈷、 銦、鎳、鉻、鈦、銻、鉍、鍺及鎘、以及該等之合金等。又,作為上述金屬,可使用摻錫氧化銦(ITO)。上述金屬可僅使用一種,亦可併用兩種以上。 It is preferable that the said 2nd conductive part contains a metal. The metal constituting the second conductive portion is not particularly limited. Examples of the metal include gold, silver, copper, platinum, palladium, zinc, lead, aluminum, cobalt, Indium, nickel, chromium, titanium, antimony, bismuth, germanium and cadmium, and their alloys. In addition, as the above metal, tin-doped indium oxide (ITO) can be used. Only one kind of the above-mentioned metals may be used, or two or more kinds may be used in combination.

上述第2導電部較佳為鎳層、鈀層、銅層或金層,更佳為鎳層或金層,進而較佳為銅層。導電性粒子較佳為具有鎳層、鈀層、銅層或金層,更佳為具有鎳層或金層,進而較佳為具有銅層。藉由將具有該等較佳之導電部之導電性粒子用於電極間之連接,電極間之連接電阻進一步降低。又,可於該等較佳之導電部之表面更容易地形成焊料部。 The second conductive portion is preferably a nickel layer, a palladium layer, a copper layer or a gold layer, more preferably a nickel layer or a gold layer, and still more preferably a copper layer. The conductive particles preferably have a nickel layer, a palladium layer, a copper layer, or a gold layer, more preferably have a nickel layer or a gold layer, and still more preferably have a copper layer. By using the conductive particles with these better conductive parts for the connection between the electrodes, the connection resistance between the electrodes is further reduced. In addition, solder parts can be more easily formed on the surfaces of these better conductive parts.

上述焊料部之厚度較佳為0.005μm以上,更佳為0.01μm以上,且較佳為10μm以下,更佳為1μm以下,進而較佳為0.3μm以下。若焊料部之厚度為上述下限以上及上述上限以下,則可獲得充分之導電性,且導電性粒子不會變得過硬,而於電極間之連接時導電性粒子會充分變形。 The thickness of the aforementioned solder portion is preferably 0.005 μm or more, more preferably 0.01 μm or more, and preferably 10 μm or less, more preferably 1 μm or less, and still more preferably 0.3 μm or less. If the thickness of the solder portion is more than the above lower limit and below the above upper limit, sufficient conductivity can be obtained, the conductive particles will not become too hard, and the conductive particles will be sufficiently deformed during the connection between the electrodes.

上述導電性粒子之平均粒徑較佳為0.5μm以上,更佳為1μm以上,進而較佳為3μm以上,且較佳為100μm以下,更佳為50μm以下,進而較佳為40μm以下,尤佳為30μm以下。若上述導電性粒子之平均粒徑為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,容易於電極間大量配置導電性粒子中之焊料,而導通可靠性進一步提高。 The average particle diameter of the conductive particles is preferably 0.5 μm or more, more preferably 1 μm or more, still more preferably 3 μm or more, and preferably 100 μm or less, more preferably 50 μm or less, and still more preferably 40 μm or less, particularly preferably It is 30μm or less. If the average particle size of the conductive particles is greater than or equal to the lower limit and less than the upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and it is easy to arrange a large amount of the solder in the conductive particles between the electrodes. The turn-on reliability is further improved.

上述導電性粒子之「平均粒徑」表示數量平均粒徑。導電性粒子之平均粒徑例如可藉由利用電子顯微鏡或光學顯微鏡觀察任意50個導電性粒子,算出平均值而求出。 The "average particle diameter" of the above-mentioned conductive particles means the number average particle diameter. The average particle diameter of the conductive particles can be obtained by observing any 50 conductive particles with an electron microscope or an optical microscope, and calculating the average value, for example.

上述導電性粒子之形狀並無特別限定。上述導電性粒子之形狀可為球狀,亦可為扁平狀等球形狀以外之形狀。 The shape of the said electroconductive particle is not specifically limited. The shape of the said electroconductive particle may be spherical, and may be a shape other than a spherical shape, such as a flat shape.

上述導電材料100重量%中,上述導電性粒子之含量較佳為1重量%以 上,更佳為2重量%以上,進而較佳為10重量%以上,尤佳為20重量%以上,最佳為30重量%以上,且較佳為80重量%以下,更佳為60重量%以下,進而較佳為50重量%以下。若上述導電性粒子之含量為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,容易於電極間大量配置導電性粒子中之焊料,導通可靠性進一步提高。就進一步提高導通可靠性之觀點而言,上述導電性粒子之含量較佳為較多。 In 100% by weight of the conductive material, the content of the conductive particles is preferably 1% by weight or more Above, it is more preferably 2% by weight or more, still more preferably 10% by weight or more, particularly preferably 20% by weight or more, most preferably 30% by weight or more, and preferably 80% by weight or less, more preferably 60% by weight Hereinafter, it is more preferably 50% by weight or less. If the content of the conductive particles is above the above lower limit and below the above upper limit, the solder in the conductive particles can be more efficiently arranged on the electrodes, and it is easy to arrange a large amount of the solder in the conductive particles between the electrodes, and conduction reliability Further improve. From the viewpoint of further improving the conduction reliability, the content of the conductive particles is preferably larger.

(熱硬化性化合物) (Thermosetting compound)

上述熱硬化性化合物係可藉由加熱而硬化之化合物。作為上述熱硬化性化合物,可列舉氧雜環丁烷化合物、環氧化合物、環硫化合物、(甲基)丙烯酸系化合物、酚化合物、胺基化合物、不飽和聚酯化合物、聚胺基甲酸酯化合物、聚矽氧化合物及聚醯亞胺化合物等。就使導電材料之硬化性及黏度更良好,進一步提高連接可靠性之觀點而言,較佳為環氧化合物或環硫化合物,更佳為環氧化合物。上述導電材料較佳為含有環氧化合物。上述熱硬化性化合物可僅使用一種,亦可併用兩種以上。 The aforementioned thermosetting compound is a compound that can be cured by heating. Examples of the above-mentioned thermosetting compound include oxetane compounds, epoxy compounds, episulfide compounds, (meth)acrylic compounds, phenol compounds, amino compounds, unsaturated polyester compounds, and polyurethane compounds. Ester compounds, polysiloxane compounds, polyimide compounds, etc. From the viewpoint of improving the curability and viscosity of the conductive material and further improving the connection reliability, an epoxy compound or an episulfide compound is preferable, and an epoxy compound is more preferable. The aforementioned conductive material preferably contains an epoxy compound. As for the said thermosetting compound, only 1 type may be used, and 2 or more types may be used together.

就進一步抑制電極之腐蝕,將連接電阻維持為更低之觀點而言,上述熱硬化性化合物較佳為含有具有氮原子之熱硬化性化合物,較佳為含有具有三 骨架之熱硬化性化合物。 From the viewpoint of further suppressing the corrosion of the electrode and maintaining the connection resistance lower, the thermosetting compound preferably contains a thermosetting compound having a nitrogen atom, and preferably contains a thermosetting compound having a triple skeleton.

作為上述具有氮原子之熱硬化性化合物,可列舉三 三縮水甘油醚等,可列舉日產化學工業公司製造之TEPIC系列(TEPIC-G、TEPIC-S、TEPIC-SS、TEPIC-HP、TEPIC-L、TEPIC-PAS、TEPIC-VL、TEPIC-UC)等。 Examples of the above-mentioned thermosetting compounds having nitrogen atoms include triglycidyl ethers, etc., including TEPIC series manufactured by Nissan Chemical Industry Co., Ltd. (TEPIC-G, TEPIC-S, TEPIC-SS, TEPIC-HP, TEPIC-L , TEPIC-PAS, TEPIC-VL, TEPIC-UC) etc.

作為上述環氧化合物,可列舉芳香族環氧化合物。較佳為間苯二酚型環氧化合物、萘型環氧化合物、聯苯型環氧化合物、及二苯甲酮型環氧化 合物等結晶性環氧化合物。較佳為於常溫(23℃)下為固體且熔融溫度為焊料之熔點以下之環氧化合物。熔融溫度較佳為100℃以下,更佳為80℃以下,且較佳為40℃以上。藉由使用上述較佳之環氧化合物,於貼合有連接對象構件之階段,黏度較高,於因搬送等之衝擊而被賦予加速度時,可抑制第1連接對象構件與第2連接對象構件之錯位,並且,藉由硬化時之熱可使導電材料之黏度大幅度降低,而可使焊料之凝集高效率地進行。 As said epoxy compound, aromatic epoxy compound is mentioned. Preferably, they are resorcinol type epoxy compounds, naphthalene type epoxy compounds, biphenyl type epoxy compounds, and benzophenone type epoxy compounds Crystalline epoxy compounds such as compounds. It is preferably an epoxy compound that is solid at normal temperature (23°C) and has a melting temperature below the melting point of the solder. The melting temperature is preferably 100°C or lower, more preferably 80°C or lower, and preferably 40°C or higher. By using the above-mentioned preferable epoxy compound, the viscosity is relatively high at the stage where the connection object member is attached, and when acceleration is given due to impact such as transportation, it can suppress the first connection object member and the second connection object member. Dislocation, and by the heat during hardening, the viscosity of the conductive material can be greatly reduced, and the agglomeration of the solder can be performed efficiently.

上述導電材料100重量%中,上述熱硬化性化合物之含量較佳為20重量%以上,更佳為40重量%以上,進而較佳為50重量%以上,且較佳為99重量%以下,更佳為98重量%以下,進而較佳為90重量%以下,尤佳為80重量%以下。若上述熱硬化性化合物之含量為上述下限以上及上述上限以下,則可將導電性粒子中之焊料進一步有效率地配置於電極上,進一步抑制電極間之錯位,而進一步提高電極間之導通可靠性。就進一步提高耐衝擊性之觀點而言,較佳為上述熱硬化性化合物之含量較多。就使導電材料之硬化性及黏度更良好,進一步提高連接可靠性之觀點而言,上述導電材料100重量%中,上述環氧化合物之含量較佳為10重量%以上,更佳為15重量%以上,且較佳為50重量%以下,更佳為30重量%以下。 In 100% by weight of the conductive material, the content of the thermosetting compound is preferably 20% by weight or more, more preferably 40% by weight or more, still more preferably 50% by weight or more, and preferably 99% by weight or less, and more It is preferably 98% by weight or less, more preferably 90% by weight or less, and particularly preferably 80% by weight or less. If the content of the thermosetting compound is above the above lower limit and below the above upper limit, the solder in the conductive particles can be further efficiently arranged on the electrodes, further suppressing the dislocation between the electrodes, and further improving the reliability of the conduction between the electrodes Sex. From the viewpoint of further improving impact resistance, it is preferable that the content of the above-mentioned thermosetting compound is large. From the viewpoint of improving the curability and viscosity of the conductive material and further improving the connection reliability, the content of the epoxy compound in 100% by weight of the conductive material is preferably 10% by weight or more, more preferably 15% by weight Above, it is preferably 50% by weight or less, more preferably 30% by weight or less.

(熱硬化劑) (Thermal hardener)

上述熱硬化劑係使上述熱硬化性化合物進行熱硬化。作為上述熱硬化劑,有咪唑硬化劑、酚系硬化劑、硫醇硬化劑、胺硬化劑、酸酐硬化劑、熱陽離子起始劑(熱陽離子硬化劑)及熱自由基產生劑等。上述熱硬化劑可僅使用一種,亦可併用兩種以上。 The thermosetting agent thermally hardens the thermosetting compound. As the above-mentioned thermal curing agent, there are imidazole curing agents, phenolic curing agents, mercaptan curing agents, amine curing agents, acid anhydride curing agents, thermal cation initiators (thermal cation curing agents), thermal radical generators, and the like. Only one kind of the above-mentioned thermosetting agent may be used, or two or more kinds may be used in combination.

作為上述咪唑硬化劑,並無特別限定,可列舉:2-甲基咪唑、2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、偏苯三酸1-氰乙基-2-苯基咪唑鎓鹽、 2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三 及2,4-二胺基-6-[2'-甲基咪唑基-(1')]-乙基-均三 異三聚氰酸加成物等。 The imidazole curing agent is not particularly limited, and examples include 2-methylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-phenylimidazole, and 1-cyano trimellitate. Ethyl-2-phenylimidazolium salt, 2,4-Diamino-6-[2'-Methylimidazolyl-(1')]-Ethyl-Tris and 2,4-Diamino-6-[2'-Methylimidazolyl- (1')]-Ethyl-s-triisocyanuric acid adduct, etc.

作為上述硫醇硬化劑,並無特別限定,可列舉:三羥甲基丙烷三(3-巰基丙酸酯)、季戊四醇四(3-巰基丙酸酯)及二季戊四醇六(3-巰基丙酸酯)等。 The mercaptan curing agent is not particularly limited, and examples thereof include trimethylolpropane tris(3-mercaptopropionate), pentaerythritol tetra(3-mercaptopropionate), and dipentaerythritol hexa(3-mercaptopropionic acid) Ester) and so on.

上述硫醇硬化劑之溶解度參數較佳為9.5以上,且較佳為12以下。上述溶解度參數係藉由Fedors法進行計算。例如,三羥甲基丙烷三(3-巰基丙酸酯)之溶解度參數為9.6,二季戊四醇六(3-巰基丙酸酯)之溶解度參數為11.4。 The solubility parameter of the aforementioned mercaptan hardener is preferably 9.5 or more, and preferably 12 or less. The above solubility parameters are calculated by the Fedors method. For example, the solubility parameter of trimethylolpropane tris(3-mercaptopropionate) is 9.6, and the solubility parameter of dipentaerythritol hexa(3-mercaptopropionate) is 11.4.

作為上述胺硬化劑,並無特別限定,可列舉:己二胺、辛二胺、癸二胺、3,9-雙(3-胺基丙基)-2,4,8,10-四螺[5.5]十一烷、雙(4-胺基環己基)甲烷、間苯二胺及二胺基二苯基碸等。 The amine curing agent is not particularly limited, and examples thereof include hexamethylene diamine, octane diamine, decane diamine, 3,9-bis(3-aminopropyl)-2,4,8,10-tetraspiro [5.5] Undecane, bis(4-aminocyclohexyl)methane, m-phenylenediamine and diaminodiphenyl sulfide, etc.

作為上述熱陽離子起始劑,可列舉:錪系陽離子硬化劑、系陽離子硬化劑及鋶系陽離子硬化劑等。作為上述錪系陽離子硬化劑,可列舉六氟磷酸雙(4-第三丁基苯基)錪等。作為上述 系陽離子硬化劑,可列舉四氟硼酸三甲基 等。作為上述鋶系陽離子硬化劑,可列舉六氟磷酸三(對甲苯基)鋶等。 Examples of the thermal cationic initiator include: cationic hardeners, cationic hardeners, cationic hardeners, and the like. Examples of the above-mentioned cationic hardener of the cationic group include bis(4-tert-butylphenyl) hexafluorophosphate and the like. Examples of the above-mentioned cationic hardener include trimethyl tetrafluoroborate and the like. Examples of the above-mentioned alumium-based cationic curing agent include tris(p-tolyl)sulfonium hexafluorophosphate and the like.

作為上述熱自由基產生劑,並無特別限定,可列舉偶氮化合物及有機過氧化物等。作為上述偶氮化合物,可列舉偶氮二異丁腈(AIBN)等。作為上述有機過氧化物,可列舉過氧化二第三丁基及過氧化甲基乙基酮等。 It does not specifically limit as said thermal radical generator, An azo compound, an organic peroxide, etc. are mentioned. As said azo compound, azobisisobutyronitrile (AIBN) etc. are mentioned. As said organic peroxide, di-tert-butyl peroxide, methyl ethyl ketone peroxide, etc. are mentioned.

上述熱硬化劑之反應起始溫度較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為250℃以下,更佳為200℃以下,進而較佳為150℃以下,尤佳為140℃以下,若上述熱硬化劑之反應起始溫度為上述下 限以上及上述上限以下,則焊料被更有效率地配置於電極上。上述熱硬化劑之反應起始溫度尤佳為80℃以上、140℃以下。 The reaction initiation temperature of the above-mentioned thermosetting agent is preferably 50°C or higher, more preferably 70°C or higher, still more preferably 80°C or higher, and preferably 250°C or lower, more preferably 200°C or lower, and still more preferably 150°C or less, especially 140°C or less, if the reaction initiation temperature of the thermal hardener is the above Above the upper limit and below the above upper limit, the solder is more efficiently arranged on the electrode. The reaction initiation temperature of the thermal hardener is particularly preferably 80°C or more and 140°C or less.

就將焊料更有效率地配置於電極上之觀點而言,上述熱硬化劑之反應起始溫度較佳為高於上述導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 From the viewpoint of disposing the solder more efficiently on the electrode, the reaction initiation temperature of the thermal hardening agent is preferably higher than the melting point of the solder in the conductive particles, more preferably 5°C or more, and more It is preferably higher than 10°C.

上述熱硬化劑之反應起始溫度意指DSC中之放熱峰開始上升之溫度。 The reaction initiation temperature of the above-mentioned thermal hardener means the temperature at which the exothermic peak in DSC starts to rise.

上述熱硬化劑之含量並無特別限定。相對於上述熱硬化性化合物100重量份,上述熱硬化劑之含量較佳為0.01重量份以上,更佳為1重量份以上,且較佳為200重量份以下,更佳為100重量份以下,進而較佳為75重量份以下。若熱硬化劑之含量為上述下限以上,則容易使導電材料充分進行硬化。若熱硬化劑之含量為上述上限以下,則硬化後未參與硬化之剩餘之熱硬化劑不易殘存,且硬化物之耐熱性進一步提高。 The content of the aforementioned thermosetting agent is not particularly limited. The content of the thermosetting agent is preferably 0.01 parts by weight or more, more preferably 1 part by weight or more, preferably 200 parts by weight or less, and more preferably 100 parts by weight or less relative to 100 parts by weight of the thermosetting compound. More preferably, it is 75 parts by weight or less. If the content of the thermosetting agent is more than the above lower limit, it is easy to sufficiently harden the conductive material. If the content of the thermosetting agent is less than the above upper limit, the remaining thermosetting agent that is not involved in hardening after hardening is unlikely to remain, and the heat resistance of the hardened product is further improved.

(助焊劑) (Flux)

上述導電材料較佳為含有助焊劑。藉由使用助焊劑,可將焊料更有效地配置於電極上。該助焊劑並無特別限定。作為助焊劑,可使用通常用於焊料接合等之助焊劑。上述導電材料亦可不含助焊劑。 The aforementioned conductive material preferably contains a flux. By using flux, the solder can be more effectively arranged on the electrode. The flux is not particularly limited. As the flux, fluxes generally used for solder bonding and the like can be used. The aforementioned conductive material may also contain no flux.

作為上述助焊劑,例如可列舉:氯化鋅、氯化鋅與無機鹵化物之混合物、氯化鋅與無機酸之混合物、熔融鹽、磷酸、磷酸之衍生物、有機鹵化物、肼、有機酸及松脂等。上述助焊劑可僅使用一種,亦可併用兩種以上。 Examples of the above-mentioned flux include: zinc chloride, a mixture of zinc chloride and inorganic halides, a mixture of zinc chloride and inorganic acids, molten salts, phosphoric acid, phosphoric acid derivatives, organic halides, hydrazine, and organic acids And rosin etc. Only one kind of the above-mentioned flux may be used, or two or more kinds may be used in combination.

作為上述熔融鹽,可列舉氯化銨等。作為上述有機酸,可列舉乳酸、檸檬酸、硬脂酸、麩胺酸及戊二酸等。作為上述松脂,可列舉活化松脂及非活化松脂等。上述助焊劑較佳為具有2個以上羧基之有機酸或松脂。上述助焊劑可為具有2個以上羧基之有機酸,亦可為松脂。藉由使用具有2個以 上羧基之有機酸、松脂,電極間之導通可靠性進一步提高。 As said molten salt, ammonium chloride etc. are mentioned. As said organic acid, lactic acid, citric acid, stearic acid, glutamic acid, glutaric acid, etc. are mentioned. Examples of the rosin include activated rosin and non-activated rosin. The above-mentioned flux is preferably an organic acid or rosin having two or more carboxyl groups. The above-mentioned flux may be an organic acid having two or more carboxyl groups, or may be rosin. By using 2 The organic acid and rosin with carboxyl group can further improve the reliability of the conduction between the electrodes.

上述松脂係以松香酸為主成分之松香類。助焊劑較佳為松香類,更佳為松香酸。藉由使用該較佳之助焊劑,電極間之導通可靠性進一步提高。 The rosin is a kind of rosin with rosin acid as the main component. The flux is preferably rosin, more preferably rosin acid. By using the better flux, the reliability of conduction between the electrodes is further improved.

上述助焊劑之活性溫度(熔點)較佳為50℃以上,更佳為70℃以上,進而較佳為80℃以上,且較佳為200℃以下,更佳為190℃以下,進而較佳為160℃以下,進而更佳為150℃以下,進而更佳為140℃以下。若上述助焊劑之活性溫度為上述下限以上及上述上限以下,則更有效地發揮出助焊劑效果,而可將焊料更有效率地配置於電極上。上述助焊劑之活性溫度(熔點)較佳為80℃以上、190℃以下。上述助焊劑之活性溫度(熔點)尤佳為80℃以上、140℃以下。 The activation temperature (melting point) of the aforementioned flux is preferably 50°C or higher, more preferably 70°C or higher, still more preferably 80°C or higher, and preferably 200°C or lower, more preferably 190°C or lower, and still more preferably 160°C or lower, more preferably 150°C or lower, and still more preferably 140°C or lower. If the activation temperature of the flux is above the above lower limit and below the above upper limit, the flux effect is more effectively exhibited, and the solder can be more efficiently arranged on the electrode. The activation temperature (melting point) of the aforementioned flux is preferably 80°C or higher and 190°C or lower. The activation temperature (melting point) of the above-mentioned flux is particularly preferably 80°C or more and 140°C or less.

作為助焊劑之活性溫度(熔點)為80℃以上、190℃以下之上述助焊劑,可列舉:琥珀酸(熔點186℃)、戊二酸(熔點96℃)、己二酸(熔點152℃)、庚二酸(熔點104℃)、辛二酸(熔點142℃)等二羧酸;苯甲酸(熔點122℃)、蘋果酸(熔點130℃)等。 Examples of the above-mentioned fluxes whose active temperature (melting point) of the flux is above 80°C and below 190°C include: succinic acid (melting point 186°C), glutaric acid (melting point 96°C), and adipic acid (melting point 152°C) , Pimelic acid (melting point 104°C), suberic acid (melting point 142°C) and other dicarboxylic acids; benzoic acid (melting point 122°C), malic acid (melting point 130°C), etc.

又,上述助焊劑之沸點較佳為200℃以下。 Moreover, it is preferable that the boiling point of the said flux is 200 degrees C or less.

就將焊料更有效率地配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述導電性粒子中之焊料之熔點,更佳為高5℃以上,進而較佳為高10℃以上。 From the viewpoint of disposing the solder more efficiently on the electrode, the melting point of the flux is preferably higher than the melting point of the solder in the conductive particles, more preferably 5°C or more, and more preferably 10 ℃ above.

就將焊料更有效率地配置於電極上之觀點而言,上述助焊劑之熔點較佳為高於上述熱硬化劑之反應起始溫度,更佳為高5℃以上,進而較佳為高10℃以上。 From the viewpoint of disposing the solder more efficiently on the electrode, the melting point of the above-mentioned flux is preferably higher than the reaction initiation temperature of the above-mentioned thermal hardener, more preferably at least 5°C higher, and still more preferably 10 ℃ above.

上述助焊劑可分散於導電材料中,亦可附著於導電性粒子之表面上。 The above-mentioned flux may be dispersed in a conductive material, or may be attached to the surface of the conductive particle.

藉由助焊劑之熔點高於焊料之熔點,可使焊料有效率地凝集於電極部 分。其原因在於,於接合時賦予熱之情形時,若將形成於連接對象構件上之電極與電極周邊之連接對象構件之部分進行比較,則電極部分之導熱率高於電極周邊之連接對象構件部分之導熱率,由此電極部分之升溫較快。於超過導電性粒子中之焊料之熔點之階段,雖然導電性粒子中之焊料會熔解,但由於未達到助焊劑之熔點(活性溫度),因此不會去除形成於表面之氧化覆膜。於該狀態下,由於電極部分之溫度先達到助焊劑之熔點(活性溫度),因此優先去除到達電極上之導電性粒子中之焊料表面之氧化覆膜,或由經活化之助焊劑將導電性粒子中之焊料表面之電荷中和,藉此焊料可潤濕擴散至電極之表面上。藉此,可使焊料有效率地凝集於電極上。 The melting point of the flux is higher than the melting point of the solder, so that the solder can efficiently aggregate on the electrode part Minute. The reason is that when heat is applied during bonding, if the electrode formed on the connection object member is compared with the part of the connection object member around the electrode, the thermal conductivity of the electrode part is higher than the part of the connection object member around the electrode. The thermal conductivity, so the electrode part heats up faster. At the stage exceeding the melting point of the solder in the conductive particles, although the solder in the conductive particles is melted, since the melting point (activation temperature) of the flux is not reached, the oxide film formed on the surface is not removed. In this state, since the temperature of the electrode part first reaches the melting point (activation temperature) of the flux, the oxide film on the surface of the solder in the conductive particles reaching the electrode is preferentially removed, or the activated flux will increase the conductivity The charge on the surface of the solder in the particles is neutralized, whereby the solder can wet and spread to the surface of the electrode. Thereby, the solder can be efficiently aggregated on the electrode.

上述助焊劑較佳為藉由加熱而釋放陽離子之助焊劑。藉由使用藉由加熱而釋放陽離子之助焊劑,可將焊料更有效率地配置於電極上。 The above-mentioned flux is preferably a flux that releases cations by heating. By using a flux that releases cations by heating, the solder can be more efficiently arranged on the electrode.

作為上述藉由加熱而釋放陽離子之助焊劑,可列舉上述熱陽離子起始劑。 Examples of the fluxes that release cations by heating include the above-mentioned thermal cationic initiators.

上述導電材料100重量%中,上述助焊劑之含量較佳為0.5重量%以上,且較佳為30重量%以下,更佳為25重量%以下。若助焊劑之含量為上述下限以上及上述上限以下,則變得更難以於焊料及電極之表面形成氧化覆膜,進而可更有效地去除形成於焊料及電極之表面之氧化覆膜。 In 100% by weight of the conductive material, the content of the flux is preferably 0.5% by weight or more, and preferably 30% by weight or less, and more preferably 25% by weight or less. If the content of the flux is more than the above lower limit and below the above upper limit, it becomes more difficult to form an oxide film on the surface of the solder and the electrode, and the oxide film formed on the surface of the solder and the electrode can be removed more effectively.

(其他成分) (Other ingredients)

上述導電材料亦可視需要含有例如填充劑、增量劑、軟化劑、塑化劑、聚合觸媒、硬化觸媒、著色劑、抗氧化劑、熱穩定劑、光穩定劑、紫外線吸收劑、潤滑劑、抗靜電劑及阻燃劑等各種添加劑。 The above-mentioned conductive material may optionally contain, for example, fillers, extenders, softeners, plasticizers, polymerization catalysts, hardening catalysts, colorants, antioxidants, heat stabilizers, light stabilizers, ultraviolet absorbers, and lubricants. , Antistatic agent and flame retardant and other additives.

(連接構造體及連接構造體之製造方法) (Connection structure and manufacturing method of connection structure)

本發明之連接構造體具備表面具有至少1個第1電極之第1連接對象構 件、表面具有至少1個第2電極之第2連接對象構件及將上述第1連接對象構件與上述第2連接對象構件連接之連接部。於本發明之連接構造體中,上述連接部之材料為上述之導電材料,上述連接部為上述之導電材料之硬化物。於本發明之連接構造體中,上述第1電極與上述第2電極利用上述連接部中之焊料部進行電性連接。 The connection structure of the present invention is provided with a first connection object structure having at least one first electrode on the surface A second connection object member having at least one second electrode on the surface, and a connection portion that connects the first connection object member and the second connection object member. In the connection structure of the present invention, the material of the connection part is the above-mentioned conductive material, and the connection part is a cured product of the above-mentioned conductive material. In the connection structure of the present invention, the first electrode and the second electrode are electrically connected by a solder portion in the connection portion.

上述連接構造體之製造方法包括:使用上述之導電材料,將上述導電材料配置於表面具有至少1個第1電極之第1連接對象構件之表面上之步驟;以上述第1電極與上述第2電極相對向之方式,將表面具有至少1個第2電極之第2連接對象構件配置於上述導電材料之與上述第1連接對象構件側相反之表面上之步驟;藉由將上述導電材料加熱至上述導電性粒子中之焊料之熔點以上,而藉由上述導電材料形成將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且利用上述連接部中之焊料部將上述第1電極與上述第2電極進行電性連接之步驟。較佳為將上述導電材料加熱至上述熱硬化性成分、熱硬化性化合物之硬化溫度以上。 The method of manufacturing the connection structure includes: using the conductive material, arranging the conductive material on the surface of a first connection object member having at least one first electrode on the surface; using the first electrode and the second In the method of facing the electrodes, the second connection object member having at least one second electrode on the surface is arranged on the surface of the conductive material opposite to the first connection object member side; by heating the conductive material to The solder in the conductive particles has a melting point or higher, and the conductive material forms a connecting portion that connects the first connection object member and the second connection object member, and the solder portion in the connection portion connects the first The step of electrically connecting the electrode and the second electrode. It is preferable to heat the said conductive material to the hardening temperature of the said thermosetting component and thermosetting compound or more.

於本發明之連接構造體及上述連接構造體之製造方法中,由於使用特定之導電材料,因此複數個導電性粒子中之焊料容易聚集於第1電極與第2電極之間,而可將焊料有效率地配置於電極(線)上。又,難以使焊料之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之焊料之量非常少。因此,可提高第1電極與第2電極之間之導通可靠性。並且可防止不得連接之橫向鄰接之電極間之電性連接,而可提高絕緣可靠性。 In the connection structure of the present invention and the method of manufacturing the connection structure described above, since a specific conductive material is used, the solder in the plurality of conductive particles is likely to gather between the first electrode and the second electrode, and the solder can be It is efficiently arranged on the electrode (line). In addition, it is difficult to arrange a part of the solder in the area (space) where the electrode is not formed, and the amount of the solder to be arranged in the area where the electrode is not formed can be very small. Therefore, the reliability of conduction between the first electrode and the second electrode can be improved. And it can prevent the electrical connection between the laterally adjacent electrodes that cannot be connected, and can improve the insulation reliability.

又,為了將複數個導電性粒子中之焊料有效率地配置於電極上,且使配置於未形成有電極之區域之焊料之量非常少,較佳為使用導電糊而非導 電膜。 In addition, in order to efficiently arrange the solder in a plurality of conductive particles on the electrode and to reduce the amount of the solder arranged in the area where the electrode is not formed, it is preferable to use a conductive paste instead of a conductive paste. Electric film.

電極間之焊料部之厚度較佳為10μm以上,更佳為20μm以上,且較佳為100μm以下,更佳為80μm以下。電極之表面上之焊料潤濕面積(露出電極之面積100%中與焊料相接之面積)較佳為50%以上,更佳為60%以上,進而較佳為70%以上,且較佳為100%以下。 The thickness of the solder portion between the electrodes is preferably 10 μm or more, more preferably 20 μm or more, and preferably 100 μm or less, and more preferably 80 μm or less. The solder wetting area on the surface of the electrode (the area in contact with the solder out of 100% of the exposed electrode area) is preferably 50% or more, more preferably 60% or more, more preferably 70% or more, and more preferably Below 100%.

於本發明之連接構造體之製造方法中,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,較佳為不進行加壓,而對上述導電材料施加上述第2連接對象構件之重量,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,較佳為不對上述導電材料施加超過上述第2連接對象構件之重量之力之加壓壓力。於該等情形時,可進一步提高複數個焊料部中焊料量之均一性。進而可更有效地加厚焊料部之厚度,複數個導電性粒子中之焊料變得容易大量聚集於電極間,而可將複數個導電性粒子中之焊料更有效率地配置於電極(線)上。又,難以使複數個導電性粒子中之焊料之一部分配置於未形成有電極之區域(間隔),而可使配置於未形成有電極之區域之導電性粒子中之焊料之量更少。因此,可進一步提高電極間之導通可靠性。並且,可進一步防止不得連接之橫向鄰接之電極間之電性連接,而可進一步提高絕緣可靠性。 In the method of manufacturing the connection structure of the present invention, in the step of arranging the second connection object member and the step of forming the connection portion, it is preferable to apply the second connection object to the conductive material without applying pressure For the weight of the member, in the step of arranging the second connection object member and the step of forming the connection portion, it is preferable that no pressure is applied to the conductive material that exceeds the weight of the second connection object member. In these situations, the uniformity of the amount of solder in the plurality of solder portions can be further improved. Furthermore, the thickness of the solder portion can be increased more effectively, the solder in the conductive particles becomes easy to gather in a large amount between the electrodes, and the solder in the conductive particles can be more efficiently arranged on the electrode (wire) on. In addition, it is difficult to arrange a part of the solder in the plurality of conductive particles in the area (space) where the electrode is not formed, and the amount of solder to be arranged in the conductive particle in the area where the electrode is not formed can be reduced. Therefore, the reliability of conduction between the electrodes can be further improved. In addition, the electrical connection between the laterally adjacent electrodes that cannot be connected can be further prevented, and the insulation reliability can be further improved.

進而亦發現,於配置上述第2連接對象構件之步驟及形成上述連接部之步驟中,若不進行加壓而對上述導電材料施加上述第2連接對象構件之重量,則於形成連接部前配置於未形成有電極之區域(間隔)之焊料更容易聚集於第1電極與第2電極之間,而可將複數個導電性粒子中之焊料更有效率地配置於電極(線)上。於本發明中,將使用導電糊而非導電膜之構成、與不進行加壓而對上述導電糊施加上述第2連接對象構件之重量之構成組合 而採用,對以更高水準獲得本發明之效果而言,具有較大之意義。 It has also been found that in the step of arranging the second connection object member and the step of forming the connection portion, if the conductive material is not pressurized and the weight of the second connection object member is applied to the conductive material, it is arranged before the connection portion is formed The solder in the region (space) where the electrode is not formed is more likely to gather between the first electrode and the second electrode, and the solder in the plurality of conductive particles can be more efficiently arranged on the electrode (line). In the present invention, a configuration that uses conductive paste instead of a conductive film is combined with a configuration that applies the weight of the second connection target member to the conductive paste without applying pressure The adoption is of greater significance for obtaining the effects of the present invention at a higher level.

再者,於WO2008/023452A1中,記載有就擠壓焊料粉使其流至電極表面並高效率地移動之觀點而言,較佳為於接著時以特定之壓力進行加壓,且記載有就進一步確實地形成焊料區域之觀點而言,加壓壓力例如設為0MPa以上,較佳為設為1MPa以上,進而記載有對接著帶刻意施加之壓力可為0MPa,亦可藉由配置於接著帶上之構件之自身重量對接著帶施加特定之壓力。WO2008/023452A1中記載有對接著帶刻意施加之壓力可為0MPa,但關於賦予超過0MPa之壓力之情形與設為0MPa之情形之效果之差異,並無任何記載。又,WO2008/023452A1中關於使用糊狀之導電糊而非膜狀之重要性,亦無任何認識。 Furthermore, in WO2008/023452A1, it is described that in terms of squeezing the solder powder to flow to the electrode surface and move it efficiently, it is preferable to pressurize with a specific pressure when adhering, and it is described that From the viewpoint of forming the solder region more reliably, the pressurizing pressure is set to, for example, 0 MPa or more, preferably 1 MPa or more, and further describes that the pressure deliberately applied to the adhesive tape can be 0 MPa, or it can be arranged on the adhesive tape The weight of the upper member exerts a specific pressure on the adhesive tape. It is stated in WO2008/023452A1 that the pressure deliberately applied to the adhesive tape can be 0 MPa, but there is no description about the difference between the effect of applying a pressure exceeding 0 MPa and the case of setting it to 0 MPa. Furthermore, WO2008/023452A1 has no knowledge about the importance of using paste-like conductive paste instead of film-like.

又,若使用導電糊而非導電膜,則變得容易藉由導電糊之塗佈量調整連接部及焊料部之厚度。另一方面,於導電膜方面,存在為了改變或調整連接部之厚度而必須準備不同厚度之導電膜、或準備特定厚度之導電膜之問題。又,於導電膜方面,與導電糊相比,有於焊料之熔融溫度下無法充分降低導電膜之熔融黏度,容易阻礙焊料之凝集之傾向。 In addition, if a conductive paste is used instead of a conductive film, it becomes easy to adjust the thickness of the connection part and the solder part by the application amount of the conductive paste. On the other hand, with regard to the conductive film, there is a problem that in order to change or adjust the thickness of the connection part, it is necessary to prepare conductive films of different thicknesses or to prepare conductive films of specific thicknesses. In addition, in terms of conductive film, compared with conductive paste, the melting viscosity of the conductive film cannot be sufficiently reduced at the melting temperature of the solder, which tends to hinder the aggregation of the solder.

以下,一面參照圖式,一面對本發明之具體之實施形態進行說明。 Hereinafter, a specific embodiment of the present invention will be described with reference to the drawings.

圖2係模式性地表示使用本發明之一實施形態之導電材料而獲得之連接構造體之剖面圖。 Fig. 2 is a cross-sectional view schematically showing a connection structure obtained by using a conductive material according to an embodiment of the present invention.

圖2所示之連接構造體1具備第1連接對象構件2、第2連接對象構件3、及將第1連接對象構件2與第2連接對象構件3連接之連接部4。連接部4係由上述之導電材料所形成。於本實施形態中,導電材料含有焊料粒子作為導電性粒子。 The connection structure 1 shown in FIG. 2 includes a first connection object member 2, a second connection object member 3, and a connection portion 4 that connects the first connection object member 2 and the second connection object member 3. The connecting portion 4 is formed of the aforementioned conductive material. In this embodiment, the conductive material contains solder particles as conductive particles.

連接部4具有複數個焊料粒子聚集而互相接合之焊料部4A、及使熱硬 化性成分進行熱硬化而成之硬化物部4B。 The connection part 4 has a solder part 4A where a plurality of solder particles are gathered and joined to each other, and heat-hardened The cured product part 4B formed by thermal curing of the chemical component.

第1連接對象構件2於表面(上表面)具有複數個第1電極2a。第2連接對象構件3於表面(下表面)具有複數個第2電極3a。第1電極2a與第2電極3a利用焊料部4A而電性連接。因此,第1連接對象構件2與第2連接對象構件3利用焊料部4A而電性連接。再者,於連接部4,於與聚集於第1電極2a與第2電極3a間之焊料部4A不同之區域(硬化物部4B部分)不存在焊料。於與焊料部4A不同之區域(硬化物部4B部分)不存在與焊料部4A分離之焊料。再者,若為少量,則亦可於與聚集於第1電極2a與第2電極3a間之焊料部4A不同之區域(硬化物部4B部分)存在焊料。 The first connection object member 2 has a plurality of first electrodes 2a on the surface (upper surface). The second connection object member 3 has a plurality of second electrodes 3a on the surface (lower surface). The first electrode 2a and the second electrode 3a are electrically connected by the solder portion 4A. Therefore, the first connection object member 2 and the second connection object member 3 are electrically connected by the solder portion 4A. In addition, in the connection part 4, the solder does not exist in the area|region (hardened part 4B part) different from the solder part 4A gathered between the 1st electrode 2a and the 2nd electrode 3a. There is no solder separated from the solder part 4A in a region different from the solder part 4A (hardened product part 4B part). Furthermore, if it is a small amount, the solder may exist in the area|region (hardened part 4B part) different from the solder part 4A which gathered between the 1st electrode 2a and the 2nd electrode 3a.

如圖2所示,於連接構造體1中,複數個焊料粒子聚集於第1電極2a與第2電極3a之間,複數個焊料粒子熔融後,焊料粒子之熔融物於電極之表面潤濕擴散後固化,而形成焊料部4A。因此,焊料部4A與第1電極2a、及焊料部4A與第2電極3a之連接面積增大。即,藉由使用焊料粒子,與使用導電部之外表面部分為鎳、金或銅等金屬之導電性粒子之情形相比,焊料部4A與第1電極2a、及焊料部4A與第2電極3a之接觸面積增大。因此,連接構造體1之導通可靠性及連接可靠性提高。 As shown in Figure 2, in the connection structure 1, a plurality of solder particles are gathered between the first electrode 2a and the second electrode 3a. After the plurality of solder particles are melted, the molten material of the solder particles wets and spreads on the surface of the electrode. After curing, the solder portion 4A is formed. Therefore, the connection area between the solder portion 4A and the first electrode 2a, and the connection area between the solder portion 4A and the second electrode 3a increases. That is, by using solder particles, the solder portion 4A and the first electrode 2a, and the solder portion 4A and the second electrode are compared with the case of using conductive particles whose outer surface is nickel, gold, or copper. The contact area of 3a increases. Therefore, the conduction reliability and connection reliability of the connection structure 1 are improved.

再者,導電材料亦可含有助焊劑。於使用助焊劑之情形時,助焊劑通常會因加熱而逐漸失活。 Furthermore, the conductive material may also contain flux. When using flux, the flux is usually gradually deactivated due to heating.

再者,於圖2所示之連接構造體1中,焊料部4A全部位於第1、第2電極2a、3a間之相對向之區域。圖4所示之變化例之連接構造體1X中,僅連接部4X不同於圖2所示之連接構造體1。連接部4X具有焊料部4XA與硬化物部4XB。如連接構造體1X般,亦可為焊料部4XA之大部分位於第1、第2電極2a、3a相對向之區域,而焊料部4XA之一部分自第1、第2電極2a、3a 相對向之區域向側向伸出。自第1、第2電極2a、3a相對向之區域向側向伸出之焊料部4XA係焊料部4XA之一部分,並非與焊料部4XA分離之焊料。再者,於本實施形態中,可使與焊料部分離之焊料之量較少,但與焊料部分離之焊料亦可存在於硬化物部中。 Furthermore, in the connection structure 1 shown in FIG. 2, all the solder portions 4A are located in the opposing regions between the first and second electrodes 2a, 3a. In the connection structure 1X of the modified example shown in FIG. 4, only the connection part 4X is different from the connection structure 1 shown in FIG. The connection part 4X has a solder part 4XA and a hardened part 4XB. Like the connection structure 1X, most of the solder portion 4XA is located in the area where the first and second electrodes 2a, 3a face each other, and a part of the solder portion 4XA is from the first and second electrodes 2a, 3a. The opposing area extends sideways. The solder part 4XA that protrudes laterally from the area facing the first and second electrodes 2a, 3a is a part of the solder part 4XA, and is not a solder separated from the solder part 4XA. Furthermore, in this embodiment, the amount of the solder separated from the solder part can be made smaller, but the solder separated from the solder part may also exist in the hardened part.

若減少焊料粒子之使用量,則變得容易獲得連接構造體1。若增多焊料粒子之使用量,則變得容易獲得連接構造體1X。 If the amount of solder particles used is reduced, the connection structure 1 becomes easier to obtain. If the amount of solder particles used is increased, it becomes easier to obtain the connection structure 1X.

就進一步提高導通可靠性之觀點而言,於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,較佳為於上述第1電極與上述第2電極之互相對向之部分之面積100%中之50%以上(更佳為60%以上,進而較佳為70%以上,尤佳為80%以上,最佳為90%以上)配置上述連接部中之焊料部。 From the viewpoint of further improving the conduction reliability, when viewing the opposing part of the first electrode and the second electrode in the direction of the stacking of the first electrode, the connecting portion, and the second electrode, it is preferably 50% or more (more preferably 60% or more, still more preferably 70% or more, particularly preferably 80% or more of the area of 100% of the opposing parts of the above-mentioned first electrode and the second electrode 90% or more) Configure the solder part in the above-mentioned connection part.

就進一步提高導通可靠性之觀點而言,於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,關於上述第1電極與上述第2電極之互相對向之部分之面積100%中之配置有連接部中之焊料部之面積之比例,中心部之電極中之面積之比例與外周部之電極中之面積之比例之差較佳為未達15%,更佳為未達10%,進而較佳為未達5%。 From the viewpoint of further improving the conduction reliability, when viewing the opposing part of the first electrode and the second electrode along the stacking direction of the first electrode, the connecting portion, and the second electrode, regarding the first electrode, 1 The ratio of the area of the electrode and the second electrode facing each other in 100% of the area where the solder part in the connecting part is arranged, the ratio of the area of the electrode in the center part to the area of the electrode in the outer peripheral part The difference in the ratio is preferably less than 15%, more preferably less than 10%, and still more preferably less than 5%.

繼而,對使用本發明之一實施形態之導電材料而製造連接構造體1之方法之一例進行說明。 Next, an example of a method of manufacturing the connection structure 1 using the conductive material of one embodiment of the present invention will be described.

首先,準備表面(上表面)具有第1電極2a之第1連接對象構件2。其次,如圖3(a)所示,於第1連接對象構件2之表面上配置含有熱硬化性成分11B與複數個焊料粒子11A之導電材料11(第1步驟)。所使用之導電材料11含有熱硬化性化合物與熱硬化劑作為熱硬化性成分11B。 First, the first connection object member 2 having the first electrode 2a on the surface (upper surface) is prepared. Next, as shown in FIG. 3(a), a conductive material 11 containing a thermosetting component 11B and a plurality of solder particles 11A is arranged on the surface of the first connection object member 2 (first step). The conductive material 11 used contains a thermosetting compound and a thermosetting agent as the thermosetting component 11B.

於第1連接對象構件2之設置有第1電極2a之表面上配置導電材料11。於配置導電材料11後,焊料粒子11A被配置於第1電極2a(線)上、及未形成有第1電極2a之區域(間隔)上之兩者。 The conductive material 11 is arranged on the surface of the first connection object member 2 where the first electrode 2a is provided. After the conductive material 11 is arranged, the solder particles 11A are arranged on both the first electrode 2a (line) and the area (space) where the first electrode 2a is not formed.

作為導電材料11之配置方法,並無特別限定,可列舉利用分注器所進行之塗佈、網版印刷、及利用噴墨裝置所進行之噴出等。 The arrangement method of the conductive material 11 is not particularly limited, and examples include coating by a dispenser, screen printing, and ejection by an inkjet device.

又,準備表面(下表面)具有第2電極3a之第2連接對象構件3。其次,如圖3(b)所示,於第1連接對象構件2之表面上之導電材料11中,於導電材料11之與第1連接對象構件2側相反之側之表面上配置第2連接對象構件3(第2步驟)。於導電材料11之表面上,自第2電極3a側起配置第2連接對象構件3。此時,使第1電極2a與第2電極3a相對向。 In addition, the second connection object member 3 having the second electrode 3a on the surface (lower surface) is prepared. Next, as shown in FIG. 3(b), of the conductive material 11 on the surface of the first connection object member 2, the second connection is arranged on the surface of the conductive material 11 on the side opposite to the first connection object member 2 side Object component 3 (Step 2). On the surface of the conductive material 11, the second connection object member 3 is arranged from the second electrode 3a side. At this time, the first electrode 2a and the second electrode 3a are opposed to each other.

其次,將導電材料11加熱至焊料粒子11A之熔點以上(第3步驟)。較佳為將導電材料11加熱至熱硬化性成分11B(黏合劑)之硬化溫度以上。於該加熱時,未形成有電極之區域所存在之焊料粒子11A會聚集於第1電極2a與第2電極3a之間(自凝集效應)。於使用導電糊而非導電膜之情形時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之間。又,焊料粒子11A熔融而互相接合。又,熱硬化性成分11B發生熱硬化。其結果為,如圖3(c)所示,利用導電材料11而形成將第1連接對象構件2與第2連接對象構件3連接之連接部4。利用導電材料11而形成連接部4,利用複數個焊料粒子11A進行接合而形成焊料部4A,利用熱硬化性成分11B進行熱硬化而形成硬化物部4B。 Next, the conductive material 11 is heated to the melting point of the solder particles 11A or higher (the third step). It is preferable to heat the conductive material 11 to the curing temperature of the thermosetting component 11B (adhesive) or higher. During this heating, the solder particles 11A existing in the area where the electrode is not formed gather between the first electrode 2a and the second electrode 3a (self-aggregation effect). When a conductive paste is used instead of a conductive film, the solder particles 11A are effectively gathered between the first electrode 2a and the second electrode 3a. In addition, the solder particles 11A are melted and joined to each other. In addition, the thermosetting component 11B undergoes thermosetting. As a result, as shown in FIG. 3(c), the conductive material 11 is used to form the connection portion 4 that connects the first connection object member 2 and the second connection object member 3. The connecting portion 4 is formed by the conductive material 11, the solder portion 4A is formed by joining a plurality of solder particles 11A, and the thermosetting component 11B is thermally cured to form the cured product portion 4B.

於本實施形態中,較佳為於上述第2步驟及上述第3步驟中不進行加壓。於該情形時,係對導電材料11施加第2連接對象構件3之重量。因此,於形成連接部4時,焊料粒子11A有效地聚集於第1電極2a與第2電極3a之 間。再者,若於上述第2步驟及上述第3步驟中之至少一者中進行加壓,則使焊料粒子聚集於第1電極與第2電極之間之作用受到阻礙之傾向變高。 In this embodiment, it is preferable not to pressurize in the second step and the third step. In this case, the weight of the second connection object member 3 is applied to the conductive material 11. Therefore, when the connecting portion 4 is formed, the solder particles 11A are effectively collected between the first electrode 2a and the second electrode 3a. between. Furthermore, if pressurization is performed in at least one of the second step and the third step, the effect of gathering solder particles between the first electrode and the second electrode tends to be hindered.

又,於本實施形態中,由於未進行加壓,因此於將第2連接對象構件重疊於塗佈有導電材料之第1連接對象構件時,於第1連接對象構件之電極與第2連接對象構件之電極之對準發生錯位之狀態下,即便於將第1連接對象構件與第2連接對象構件重疊之情形時,亦可修正該錯位,而將第1連接對象構件之電極與第2連接對象構件之電極連接(自動對準效應)。其原因在於,由於在第1連接對象構件之電極與第2連接對象構件之電極之間發生自凝集之熔融之焊料於第1連接對象構件之電極與第2連接對象構件之電極之間之焊料與導電材料之其他成分相接之面積變得最小時於能量方面會變得穩定,因此成為該最小面積之連接構造即已對準之連接構造之力發揮作用。此時,較理想為導電材料未硬化,及於該溫度、時間之條件下導電材料之導電性粒子以外之成分之黏度充分低。 In addition, in this embodiment, since pressure is not applied, when the second connection object member is superimposed on the first connection object member coated with the conductive material, the electrode of the first connection object member and the second connection object When the alignment of the electrode of the member is misaligned, even when the first connection target member and the second connection target member are overlapped, the misalignment can be corrected and the electrode of the first connection target member can be connected to the second The electrode connection of the target component (automatic alignment effect). The reason is that the self-agglomerated molten solder occurs between the electrode of the first connection object member and the electrode of the second connection object member, and the solder between the electrode of the first connection object member and the electrode of the second connection object member When the area in contact with other components of the conductive material becomes the smallest, it becomes stable in terms of energy. Therefore, the connection structure that becomes the smallest area, that is, the force of the aligned connection structure acts. At this time, it is preferable that the conductive material is not hardened, and the viscosity of the components other than the conductive particles of the conductive material is sufficiently low under the conditions of the temperature and time.

如此而獲得圖2所示之連接構造體1。再者,上述第2步驟與上述第3步驟可連續進行。又,亦可於進行上述第2步驟後,將所獲得之第1連接對象構件2與導電材料11與第2連接對象構件3之積層體移動至加熱部,再進行上述第3步驟。為了進行上述加熱,可將上述積層體配置於加熱構件上,亦可將上述積層體配置於經加熱之空間內。 In this way, the connection structure 1 shown in FIG. 2 is obtained. Furthermore, the above-mentioned second step and the above-mentioned third step may be performed continuously. Furthermore, after performing the above-mentioned second step, the obtained layered body of the first connection object member 2 and the conductive material 11 and the second connection object member 3 may be moved to the heating part, and then the above-mentioned third step may be performed. In order to perform the heating, the laminate may be arranged on a heating member, or the laminate may be arranged in a heated space.

上述第3步驟中之上述加熱溫度較佳為140℃以上,更佳為160℃以上,且較佳為450℃以下,更佳為250℃以下,進而較佳為200℃以下。 The heating temperature in the third step is preferably 140°C or higher, more preferably 160°C or higher, and preferably 450°C or lower, more preferably 250°C or lower, and still more preferably 200°C or lower.

作為上述第3步驟中之加熱方法,可列舉使用回焊爐或使用烘箱將連接構造體整體加熱至焊料之熔點以上及熱硬化性成分之硬化溫度以上之方法,或僅將連接構造體之連接部局部加熱至焊料之熔點以上及熱硬化性成 分之硬化溫度以上之方法。 As the heating method in the above-mentioned third step, there can be mentioned a method of using a reflow furnace or an oven to heat the entire connecting structure to a temperature higher than the melting point of the solder and the hardening temperature of the thermosetting component, or only connecting the structure The part is locally heated to above the melting point of the solder Divide the method above the hardening temperature.

上述第1、第2連接對象構件並無特別限定。作為上述第1、第2連接對象構件,具體而言,可列舉:半導體晶片、半導體封裝、LED(Light Emitting Diode,發光二極體)晶片、LED封裝、電容器及二極體等電子零件;及樹脂膜、印刷基板、軟性印刷基板、軟性扁平電纜、剛性軟性基板、環氧玻璃基板及玻璃基板等電路基板等電子零件等。上述第1、第2連接對象構件較佳為電子零件。 The aforementioned first and second connection target members are not particularly limited. Specific examples of the above-mentioned first and second connection target members include electronic components such as semiconductor wafers, semiconductor packages, LED (Light Emitting Diode) wafers, LED packages, capacitors, and diodes; and Electronic components such as resin films, printed circuit boards, flexible printed circuit boards, flexible flat cables, rigid flexible boards, glass epoxy substrates, and circuit boards such as glass substrates. The first and second connection target members are preferably electronic components.

較佳為上述第1連接對象構件及上述第2連接對象構件中之至少一者為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。較佳為上述第2連接對象構件為樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板。樹脂膜、軟性印刷基板、軟性扁平電纜及剛性軟性基板具有柔軟性較高、相對輕量之性質。於將導電膜用於此種連接對象構件之連接之情形時,有焊料難以聚集於電極上之傾向。相對於此,藉由使用導電糊,即便使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板,亦可藉由使焊料有效率地聚集於電極上,而充分提高電極間之導通可靠性。於使用樹脂膜、軟性印刷基板、軟性扁平電纜或剛性軟性基板之情形時,與使用半導體晶片等其他連接對象構件之情形相比,可更有效地獲得因不進行加壓引起之電極間之導通可靠性之提高效果。 Preferably, at least one of the first connection target member and the second connection target member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible circuit board. Preferably, the second connection object member is a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible board. Resin film, flexible printed circuit board, flexible flat cable and rigid flexible board have the properties of high flexibility and relatively light weight. When the conductive film is used for the connection of such a connection object member, there is a tendency that the solder is difficult to collect on the electrode. In contrast, by using conductive paste, even if a resin film, a flexible printed circuit board, a flexible flat cable, or a rigid flexible board is used, the solder can be efficiently collected on the electrodes to sufficiently improve the reliability of conduction between the electrodes. . When using a resin film, a flexible printed circuit board, a flexible flat cable or a rigid flexible circuit board, compared to the use of other connection objects such as semiconductor chips, the conduction between electrodes due to no pressure can be obtained more effectively The effect of improving reliability.

上述連接對象構件之形態中存在周圍排列或面積陣列等。作為各構件之特徵,周圍排列基板中電極僅存在於基板之外周部。面積陣列基板中電極存在於面內。 In the form of the above-mentioned connection target member, there are surrounding arrays or area arrays. As a feature of each component, the electrodes in the peripheral array substrate only exist on the outer periphery of the substrate. The electrodes in the area array substrate exist in the plane.

作為設置於上述連接對象構件之電極,可列舉金電極、鎳電極、錫電極、鋁電極、銅電極、鉬電極、銀電極、SUS電極、及鎢電極等金屬電極。 於上述連接對象構件為軟性印刷基板之情形時,上述電極較佳為金電極、鎳電極、錫電極、銀電極或銅電極。於上述連接對象構件為玻璃基板之情形時,上述電極較佳為鋁電極、銅電極、鉬電極、銀電極或鎢電極。再者,於上述電極為鋁電極之情形時,可為僅由鋁形成之電極,亦可為於金屬氧化物層之表面積層有鋁層之電極。作為上述金屬氧化物層之材料,可列舉摻雜有三價金屬元素之氧化銦及摻雜有三價金屬元素之氧化鋅等。作為上述三價金屬元素,可列舉Sn、Al及Ga等。 Examples of the electrodes provided on the connection target member include metal electrodes such as gold electrodes, nickel electrodes, tin electrodes, aluminum electrodes, copper electrodes, molybdenum electrodes, silver electrodes, SUS electrodes, and tungsten electrodes. When the connection object member is a flexible printed circuit board, the electrode is preferably a gold electrode, a nickel electrode, a tin electrode, a silver electrode, or a copper electrode. When the connection object member is a glass substrate, the electrode is preferably an aluminum electrode, a copper electrode, a molybdenum electrode, a silver electrode, or a tungsten electrode. Furthermore, when the above-mentioned electrode is an aluminum electrode, it may be an electrode formed only of aluminum, or an electrode with an aluminum layer on the surface area of the metal oxide layer. As the material of the metal oxide layer, indium oxide doped with trivalent metal element, zinc oxide doped with trivalent metal element, etc. can be cited. As said trivalent metal element, Sn, Al, Ga, etc. are mentioned.

以下,列舉實施例及比較例對本發明進行具體說明。本發明並不僅限定於以下之實施例。 Hereinafter, examples and comparative examples are given to specifically explain the present invention. The present invention is not limited to the following examples.

聚合物A: Polymer A:

雙酚F與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之反應物(聚合物A)之合成: Synthesis of the reactant (polymer A) of bisphenol F, 1,6-hexanediol diglycidyl ether, and bisphenol F epoxy resin:

將雙酚F(按照重量比以2:3:1含有4,4'-亞甲基雙酚、2,4'-亞甲基雙酚及2,2'-亞甲基雙酚)72重量份、1,6-己二醇二縮水甘油醚70重量份、及雙酚F型環氧樹脂(DIC公司製造之「EPICLON EXA-830CRP」)30重量份裝入三口燒瓶中,於氮氣氣流、150℃下使之溶解。其後,添加作為羥基與環氧基之加成反應觸媒之四正丁基溴化鋶0.1重量份,於氮氣氣流、150℃下使之進行6小時之加成聚合反應,藉此獲得反應物(聚合物A)。 Bisphenol F (containing 4,4'-methylene bisphenol, 2,4'-methylene bisphenol and 2,2'-methylene bisphenol in a weight ratio of 2:3:1) 72 weight Parts, 70 parts by weight of 1,6-hexanediol diglycidyl ether, and 30 parts by weight of bisphenol F type epoxy resin ("EPICLON EXA-830CRP" manufactured by DIC Corporation) were put into a three-necked flask and placed in a nitrogen stream, Dissolve at 150°C. Then, 0.1 parts by weight of tetra-n-butyl arumium bromide as a catalyst for the addition reaction of the hydroxyl group and the epoxy group was added, and the addition polymerization reaction was carried out at 150°C under a nitrogen stream for 6 hours to obtain a reaction物(Polymer A).

藉由NMR(nuclear magnetic resonance,核磁共振)確認已進行加成聚合反應,確認反應物(聚合物A)於主鏈具有源自雙酚F之羥基與1,6-己二醇二縮水甘油醚、及雙酚F型環氧樹脂之環氧基鍵結而成之結構單元,且於兩末端具有環氧基。 The addition polymerization reaction was confirmed by NMR (nuclear magnetic resonance), and the reactant (polymer A) had a hydroxyl group derived from bisphenol F and 1,6-hexanediol diglycidyl ether in the main chain. , And a structural unit formed by bonding epoxy groups of bisphenol F epoxy resin, and have epoxy groups at both ends.

藉由GPC所獲得之反應物(聚合物A)之重量平均分子量為10000,數量 平均分子量為3500。 The weight average molecular weight of the reactant (polymer A) obtained by GPC is 10000, and the quantity The average molecular weight is 3500.

Figure 105127115-A0305-02-0045-7
Figure 105127115-A0305-02-0045-7

熱硬化性化合物1:間苯二酚型環氧化合物,Nagase chemteX公司製造之「EX-201」 Thermosetting compound 1: Resorcinol type epoxy compound, "EX-201" manufactured by Nagase chemteX

熱硬化劑1:硫醇熱硬化劑,昭和電工公司製造之「Karenz MT」 Thermohardener 1: Mercaptan thermohardener, "Karenz MT" manufactured by Showa Denko Corporation

熱硬化劑2:微膠囊型熱硬化劑,旭化成E-MATERIALS公司製造之「HXA3922HP」 Thermal hardener 2: Microcapsule type thermal hardener, "HXA3922HP" manufactured by Asahi Kasei E-MATERIALS

潛伏性熱硬化劑1:T&K TOKA公司製造之「FUJICURE 7000」 Latent thermosetting agent 1: "FUJICURE 7000" manufactured by T&K TOKA

助焊劑1:戊二酸,和光純藥工業公司製造 Flux 1: Glutaric acid, manufactured by Wako Pure Chemical Industries, Ltd.

偶合劑1:矽烷偶合劑,Shin-Etsu Silicones公司製造之「KBE-9007」 Coupling agent 1: Silane coupling agent, "KBE-9007" manufactured by Shin-Etsu Silicones

焊料粒子1: Solder particles 1:

焊料粒子1之製作方法: Manufacturing method of solder particles 1:

使用作為觸媒之對甲苯磺酸,一面使SnBi焊料粒子(三井金屬公司製造之「ST-5」,平均粒徑(中值徑)5μm)與戊二酸(具有2個羧基之化合物,和光純藥工業公司製造之「戊二酸」)在甲苯溶劑中於90℃下進行脫水,一面攪拌8小時,藉此獲得於焊料之表面共價鍵結有含有羧基之基之焊料粒子1。 Using p-toluenesulfonic acid as a catalyst, SnBi solder particles ("ST-5" manufactured by Mitsui Metals Co., Ltd., average particle size (median diameter) 5μm) and glutaric acid (a compound with 2 carboxyl groups, and "Glutaric acid" manufactured by Kopure Pure Chemical Industry Co., Ltd.) was dehydrated in toluene solvent at 90°C and stirred for 8 hours to obtain solder particles 1 with carboxyl-containing groups covalently bonded to the surface of the solder.

於所獲得之焊料粒子1中,CV(Coefficient of variation,變異係數)值為20%,構成表面之聚合物之分子量Mw=2000。 In the obtained solder particles 1, the CV (Coefficient of Variation) value is 20%, and the molecular weight Mw of the polymer constituting the surface is 2000.

(實施例1~6及比較例1、2) (Examples 1 to 6 and Comparative Examples 1 and 2)

(1)各向異性導電糊之製作 (1) Production of anisotropic conductive paste

以下述之表1所示之調配量調配下述之表1所示之成分,而獲得各向異性導電糊。 The components shown in Table 1 below were blended in the blending amounts shown in Table 1 below to obtain an anisotropic conductive paste.

(2)第1連接構造體(面積陣列基板)之製作 (2) Fabrication of the first connection structure (area array substrate)

作為第1連接對象構件,準備於半導體晶片本體(尺寸5×5mm、厚度0.4mm)之表面以400μm間距按照面積陣列配置有250μm之銅電極,且於最表面形成有鈍化膜(聚醯亞胺、厚度5μm、電極部之開口徑200μm)之半導體晶片。關於銅電極之個數,每1個半導體晶片為10個×10個之合計100個。 As the first connection target member, 250μm copper electrodes are arranged in an area array with a 400μm pitch on the surface of the semiconductor wafer body (size 5×5mm, thickness 0.4mm), and a passivation film (polyimide) is formed on the outermost surface. , A semiconductor wafer with a thickness of 5μm and an electrode opening diameter of 200μm). Regarding the number of copper electrodes, a total of 100 pieces of 10×10 pieces per semiconductor wafer.

作為第2連接對象構件,準備於環氧玻璃基板本體(尺寸20×20mm、厚度1.2mm、材質FR-4)之表面以相對於第1連接對象構件之電極成為相同之圖案之方式配置有銅電極,且於未配置銅電極之區域形成有阻焊膜之環氧玻璃基板。銅電極之表面與阻焊膜之表面之階差為15μm,阻焊膜與銅電極相比更突出。 As the second connection object member, the surface of the glass epoxy substrate body (size 20×20mm, thickness 1.2mm, material FR-4) is prepared, and copper is arranged so that the electrode of the first connection object member has the same pattern Electrodes, and a glass epoxy substrate with solder resist film is formed in the area where no copper electrode is arranged. The step difference between the surface of the copper electrode and the surface of the solder mask is 15 μm, and the solder mask is more prominent than the copper electrode.

藉由分注器將剛製作後之各向異性導電糊塗佈於上述環氧玻璃基板之上表面,而形成各向異性導電糊層。各向異性導電糊層之塗佈方法係以於上述環氧玻璃基板之中心直徑成為2.5mm之方式進行。其次,以電極彼此成為對向之方式於各向異性導電糊層之上表面積層上述半導體晶片。對各向異性導電糊層施加上述半導體晶片之重量。 The anisotropic conductive paste just after manufacture is coated on the upper surface of the epoxy glass substrate by a dispenser to form an anisotropic conductive paste layer. The coating method of the anisotropic conductive paste layer was performed so that the center diameter of the above-mentioned epoxy glass substrate became 2.5 mm. Next, the above-mentioned semiconductor wafer is layered on the surface area of the anisotropic conductive paste layer so that the electrodes face each other. The weight of the aforementioned semiconductor wafer is applied to the anisotropic conductive paste layer.

以自開始升溫起5秒後各向異性導電糊層之溫度成為139℃(焊料之熔點)之方式進行加熱。進而,以自開始升溫起15秒後各向異性導電糊層之溫 度成為160℃之方式進行加熱,使各向異性導電糊硬化,而獲得連接構造體。於加熱時不進行加壓。 Heating was performed so that the temperature of the anisotropic conductive paste layer became 139°C (melting point of solder) after 5 seconds from the start of the temperature rise. Furthermore, the temperature of the anisotropic conductive paste layer 15 seconds after the start of the temperature rise Heating is performed so that the temperature becomes 160°C to harden the anisotropic conductive paste to obtain a connection structure. No pressure is applied during heating.

(3)第2連接構造體(周圍排列基板)之製作 (3) Fabrication of the second connection structure (surrounding substrate)

作為第1連接對象構件,準備於半導體晶片本體(尺寸5×5mm、厚度0.4mm)之表面以400μm間距在晶片外周部配置(周圍排列)有250μm之銅電極,且於最表面形成有鈍化膜(聚醯亞胺、厚度5μm、電極部之開口徑200μm)之半導體晶片。關於銅電極之個數,每1個半導體晶片為10個×4邊之合計36個。 As the first member to be connected, 250μm copper electrodes are arranged (arranged around) on the outer periphery of the wafer at 400μm pitch on the surface of the semiconductor wafer body (size 5×5mm, thickness 0.4mm), and a passivation film is formed on the outermost surface. (Polyimide, thickness 5μm, electrode opening diameter 200μm) semiconductor wafer. Regarding the number of copper electrodes, a total of 36 pieces of 10 × 4 sides per semiconductor wafer.

作為第2連接對象構件,於環氧玻璃基板本體(尺寸20×20mm、厚度1.2mm、材質FR-4)之表面以相對於第1連接對象構件之電極成為相同之圖案之方式配置有銅電極,且於未配置銅電極之區域形成有阻焊膜之銅電極之表面與阻焊膜之表面之階差為15μm,阻焊膜與銅電極相比更突出。 As the second connection object member, a copper electrode is arranged on the surface of the epoxy glass substrate body (size 20×20mm, thickness 1.2mm, material FR-4) so as to have the same pattern as the electrode of the first connection object member And the step difference between the surface of the copper electrode with the solder resist film and the surface of the solder resist film in the area where the copper electrode is not arranged is 15μm, and the solder resist film is more prominent than the copper electrode.

藉由分注器將剛製作後之各向異性導電糊塗佈於上述環氧玻璃基板之上表面,而形成各向異性導電糊層。各向異性導電糊層之塗佈方法係以於上述環氧玻璃基板之中心直徑成為2.5mm之方式進行。其次,以電極彼此成為對向之方式於各向異性導電糊層之上表面積層上述半導體晶片。對各向異性導電糊層施加上述半導體晶片之重量。 The anisotropic conductive paste just after manufacture is coated on the upper surface of the epoxy glass substrate by a dispenser to form an anisotropic conductive paste layer. The coating method of the anisotropic conductive paste layer was performed so that the center diameter of the above-mentioned epoxy glass substrate became 2.5 mm. Next, the above-mentioned semiconductor wafer is layered on the surface area of the anisotropic conductive paste layer so that the electrodes face each other. The weight of the aforementioned semiconductor wafer is applied to the anisotropic conductive paste layer.

以自開始升溫起5秒後各向異性導電糊層之溫度成為139℃(焊料之熔點)之方式進行加熱。進而,以自開始升溫起15秒後各向異性導電糊層之溫度成為160℃之方式進行加熱,使各向異性導電糊硬化,而獲得連接構造體。於加熱時不進行加壓。 Heating was performed so that the temperature of the anisotropic conductive paste layer became 139°C (melting point of solder) after 5 seconds from the start of the temperature rise. Furthermore, heating was performed so that the temperature of the anisotropic conductive paste layer became 160 degreeC after 15 seconds from the start of the temperature increase, the anisotropic conductive paste was hardened, and the connection structure was obtained. No pressure is applied during heating.

(評價) (Evaluation)

(1)黏度 (1) Viscosity

使用STRESSTECH(EOLOGICA公司製造),於應變控制1rad、頻率1Hz、升溫速度20℃/分鐘、及測定溫度範圍25~200℃之條件下測定各向異性導電糊之25℃下之黏度(η25)、及100℃下之黏度(η100)。 Using STRESSTECH (manufactured by EOLOGICA), under the conditions of strain control 1rad, frequency 1Hz, heating rate 20℃/min, and measuring temperature range of 25~200℃, measure the viscosity (η25) of anisotropic conductive paste at 25℃, And the viscosity at 100°C (η100).

(2)藉由DSC進行之放熱峰P1及吸熱峰P2之測定 (2) Determination of exothermic peak P1 and endothermic peak P2 by DSC

調配實施例及比較例之各向異性導電糊中之熱硬化性成分。使用示差掃描熱量測定裝置(TA Instruments公司製造之「Q2000」),以10℃/分鐘之升溫速度加熱所獲得之熱硬化性成分,對源自上述熱硬化性成分之硬化之放熱峰P1、P2進行測定。 The thermosetting components in the anisotropic conductive pastes of the examples and comparative examples were blended. Using a differential scanning calorimetry device ("Q2000" manufactured by TA Instruments), heating the obtained thermosetting component at a temperature increase rate of 10°C/min, the exothermic peaks P1 and P2 derived from the curing of the above thermosetting component Perform the measurement.

又,使用示差掃描熱量測定裝置(TA Instruments公司製造之「Q2000」),以10℃/分鐘之升溫速度加熱導電性粒子,對源自導電性粒子中之焊料之熔融之吸熱峰P3進行測定。 Furthermore, using a differential scanning calorimeter ("Q2000" manufactured by TA Instruments), the conductive particles were heated at a temperature increase rate of 10°C/min, and the endothermic peak P3 derived from the melting of the solder in the conductive particles was measured.

將以下之1)~9)之結果示於下述之表1中。 The results of 1) to 9) below are shown in Table 1 below.

1)顯示出源自導電性粒子中之焊料之熔融之吸熱峰P3之溫度區域與顯示出源自熱硬化性成分之硬化之放熱峰P1之溫度區域有無重複 1) Whether the temperature region showing the endothermic peak P3 derived from the melting of the solder in the conductive particles overlaps with the temperature region showing the exothermic peak P1 derived from the hardening of the thermosetting component

2)顯示出源自導電性粒子中之焊料之熔融之吸熱峰P3之溫度區域與顯示出源自熱硬化性成分之硬化之放熱峰P2之溫度區域有無重複 2) Whether the temperature region showing the endothermic peak P3 derived from the melting of the solder in the conductive particles overlaps with the temperature region showing the exothermic peak P2 derived from the hardening of the thermosetting component

3)源自熱硬化性成分之硬化之放熱峰頂P1t溫度 3) P1t temperature of exothermic peak of hardening derived from thermosetting components

4)源自熱硬化性成分之硬化之放熱峰頂P2t溫度 4) P2t temperature at the top of the exothermic peak derived from the hardening of the thermosetting component

5)源自導電性粒子中之焊料之熔融之吸熱峰頂P3t溫度 5) P3t temperature at the top of the endothermic peak derived from the melting of the solder in the conductive particles

6)吸熱峰頂P3t溫度與放熱峰頂P1t溫度之差之絕對值 6) The absolute value of the difference between the P3t temperature at the top of the endothermic peak and the P1t temperature at the top of the exothermic peak

7)吸熱峰頂P3t溫度與放熱峰頂P2t溫度之差之絕對值 7) The absolute value of the difference between the P3t temperature of the endothermic peak and the P2t temperature of the exothermic peak

8)吸熱峰頂P3t溫度以下之溫度區域中之源自熱硬化性成分之硬化之總放熱量(低溫側) 8) The total exothermic heat derived from the hardening of the thermosetting component in the temperature region below the P3t temperature of the endothermic peak (low temperature side)

9)吸熱峰頂P3t溫度以上之溫度區域中之源自熱硬化性成分之硬化之總放熱量(高溫側) 9) The total exothermic heat derived from the hardening of the thermosetting component in the temperature region above the P3t temperature of the endothermic peak (high temperature side)

將以下之10)、11)之結果亦示於下述之表1中。 The results of 10) and 11) below are also shown in Table 1 below.

10)源自導電性粒子中之焊料之熔融之吸熱峰之高溫側之峰結束溫度(X1)與源自熱硬化性成分之硬化之最高溫側之放熱峰之高溫側之峰結束溫度(Y1)之關係;以X1<Y1、X1=Y1或X1>Y1記載於表1中。 10) The peak end temperature (X1) on the high temperature side of the endothermic peak derived from the melting of the solder in the conductive particles and the peak end temperature (Y1) on the high temperature side of the exothermic peak derived from the highest temperature side of the hardening of the thermosetting component Relations; listed in Table 1 as X1<Y1, X1=Y1 or X1>Y1.

11)源自導電性粒子中之焊料之熔融之吸熱峰之低溫側之峰起始溫度(X2)與源自熱硬化性成分之硬化之最低溫側之放熱峰之低溫側之峰起始溫度(Y2)之關係;以X2<Y2、X2=Y2或X2>Y2記載於表1中。 11) The peak onset temperature (X2) of the low temperature side of the endothermic peak derived from the melting of the solder in the conductive particles and the peak on the low temperature side of the low temperature side of the exothermic peak of the hardening of the thermosetting component (Y2) ); listed in Table 1 as X2<Y2, X2=Y2 or X2>Y2.

於上述1)及2)之評價中,作為結果而示出之「-」表示不存在峰。於上述10)及11)之評價中,作為結果而示出之「-」表示未評價。 In the evaluation of 1) and 2) above, the "-" shown as a result indicates that there is no peak. In the above-mentioned evaluations of 10) and 11), "-" shown as a result means that the evaluation is not performed.

(3)電極上之焊料之配置精度1 (3) The placement accuracy of solder on the electrode 1

於所獲得之連接構造體中,對沿中心部之第1電極、連接部及第2電極之積層方向觀察第1電極與第2電極之互相對向之部分時第1電極與第2電極之互相對向之部分之面積100%中之配置有連接部中之焊料部之面積之比例X進行評價。按照下述基準判定電極上之焊料之配置精度1。 In the obtained connection structure, when the first electrode and the second electrode facing each other are observed along the stacking direction of the first electrode, the connection part and the second electrode in the center part, the difference between the first electrode and the second electrode The ratio X of the area where the solder part in the connecting part is arranged in 100% of the area of the parts facing each other is evaluated. Determine the placement accuracy of the solder on the electrode according to the following criteria1.

[電極上之焊料之配置精度1之判定基準] [Judgment criteria for the placement accuracy of solder on the electrode 1]

○○:比例X為90%以上 ○○: Ratio X is 90% or more

○:比例X為80%以上、未達90% ○: The ratio X is 80% or more but less than 90%

△:比例X為60%以上、未達80% △: The ratio X is 60% or more but less than 80%

×:比例X未達60% ×: The ratio X has not reached 60%

(4)電極上之焊料之配置精度2 (4) The placement accuracy of solder on the electrode 2

於所獲得之連接構造體中,對沿外周部之第1電極、連接部及第2電極 之積層方向觀察第1電極與第2電極之互相對向之部分時連接部中之焊料部100%中配置於第1電極與第2電極之互相對向之部分之連接部中之焊料部之比例Y進行評價。按照下述基準判定電極上之焊料之配置精度2。 In the obtained connection structure, the first electrode, the connection part and the second electrode along the outer periphery When observing the opposing part of the first electrode and the second electrode in the stacking direction, 100% of the solder part in the connecting part is arranged in the connecting part of the first electrode and the second electrode. The ratio Y is evaluated. Determine the placement accuracy of the solder on the electrode according to the following criteria2.

[電極上之焊料之配置精度2之判定基準] [Judgment criteria for placement accuracy of solder on electrode 2]

○○:比例X為90%以上 ○○: Ratio X is 90% or more

○:比例X為80%以上、未達90% ○: The ratio X is 80% or more but less than 90%

△:比例X為60%以上、未達80% △: The ratio X is 60% or more but less than 80%

×:比例X未達60% ×: The ratio X has not reached 60%

(5)基板內之焊料之配置精度3 (5) The placement accuracy of solder in the substrate 3

於所獲得之連接構造體中,於沿第1電極、連接部及第2電極之積層方向觀察第1電極與第2電極之互相對向之部分時,關於第1電極與第2電極之互相對向之部分之面積100%中配置有連接部中之焊料部之面積之比例,對中心部之電極中之面積之比例與外周部之電極中之面積之比例之差Z進行評價。按照下述基準判定基板內之焊料之配置精度3。 In the obtained connection structure, when the first electrode and the second electrode facing each other are viewed along the stacking direction of the first electrode, the connecting portion, and the second electrode, the relationship between the first electrode and the second electrode The ratio of the area of 100% of the area of the opposite part to the area of the solder part in the connecting part is evaluated, and the difference Z between the ratio of the area of the electrode in the center part and the ratio of the area of the electrode in the outer peripheral part is evaluated. Determine the placement accuracy of solder in the board according to the following criteria3.

[基板內之焊料之配置精度3之判定基準] [Judgment criteria for the placement accuracy of solder in the board 3]

○○:差Z未達5% ○○: The difference Z is less than 5%

○:差Z為5%以上、未達10% ○: The difference Z is 5% or more but less than 10%

△:差Z為10%以上、未達15% △: The difference Z is more than 10% and less than 15%

×:差Z為15%以上 ×: Difference Z is 15% or more

(6)上下之電極間之導通可靠性 (6) Reliability of conduction between upper and lower electrodes

於所獲得之連接構造體(n=15個)中,藉由四端子法分別測定上下之電極間之連接電阻。計算出連接電阻之平均值。再者,根據電壓=電流×電阻之關係,藉由測定流通恆定電流時之電壓,可求出連接電阻。按照下述基 準判定導通可靠性。 In the obtained connection structure (n=15), the connection resistance between the upper and lower electrodes was measured by the four-terminal method. Calculate the average value of the connection resistance. Furthermore, based on the relationship of voltage=current×resistance, the connection resistance can be obtained by measuring the voltage when a constant current flows. According to the following basis Quasi-determine the reliability of conduction.

[導通可靠性之判定基準] [Judgment criteria for continuity reliability]

○○:連接電阻之平均值為8.0Ω以下 ○○: The average value of the connection resistance is 8.0Ω or less

○:連接電阻之平均值超過8.0Ω且為10.0Ω以下 ○: The average value of the connection resistance exceeds 8.0Ω and is below 10.0Ω

△:連接電阻之平均值超過10.0Ω且為15.0Ω以下 △: The average value of connection resistance exceeds 10.0Ω and is below 15.0Ω

×:連接電阻之平均值超過15.0Ω ×: The average value of connection resistance exceeds 15.0Ω

將結果示於下述之表1中。 The results are shown in Table 1 below.

Figure 105127115-A0305-02-0052-8
Figure 105127115-A0305-02-0052-8

於使用軟性印刷基板、樹脂膜、軟性扁平電纜及剛性軟性基板之情形時亦可見同樣之傾向。 The same tendency can be seen when using flexible printed circuit boards, resin films, flexible flat cables, and rigid flexible boards.

Claims (10)

一種導電材料,其含有於導電部之外表面部分具有焊料之複數個導電性粒子、及熱硬化性成分,且於自25℃起分別以10℃/分鐘之升溫速度加熱上述導電性粒子與上述熱硬化性成分而進行示差掃描熱量測定時,顯示出源自上述導電性粒子中之焊料之熔融之吸熱峰之溫度區域與顯示出源自上述熱硬化性成分之硬化之放熱峰之溫度區域至少一部分重複,且源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度以下之溫度區域中之源自上述熱硬化性成分之硬化之總放熱量小於源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度以上之溫度區域中之源自上述熱硬化性成分之硬化之總放熱量。 A conductive material comprising a plurality of conductive particles having solder on the outer surface of a conductive part, and a thermosetting component, and heating the conductive particles and the above conductive particles at a heating rate of 10°C/min from 25°C. When performing differential scanning calorimetry for thermosetting components, the temperature region showing the endothermic peak derived from the melting of the solder in the conductive particles and the temperature region showing the exothermic peak derived from the hardening of the thermosetting component overlap at least in part , And the total exothermic heat derived from the hardening of the thermosetting component in the temperature range below the endothermic peak temperature of the melting of the solder in the conductive particles is smaller than that derived from the melting of the solder in the conductive particles The total exothermic heat derived from the hardening of the above-mentioned thermosetting component in the temperature region above the endothermic peak temperature. 如請求項1之導電材料,其中於較源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度更低溫側存在源自上述熱硬化性成分之硬化之第1放熱峰頂溫度,且於較源自上述導電性粒子中之焊料之熔融之吸熱峰頂溫度更高溫側存在源自上述熱硬化性成分之硬化之第2放熱峰頂溫度。 The conductive material of claim 1, wherein the first exothermic peak temperature derived from the hardening of the thermosetting component exists on the lower side than the endothermic peak temperature derived from the melting of the solder in the conductive particles, and There is a second exothermic peak temperature derived from the hardening of the thermosetting component on the higher temperature side than the endothermic peak temperature derived from the melting of the solder in the conductive particles. 如請求項2之導電材料,其中上述吸熱峰頂溫度與上述第1放熱峰頂溫度之差之絕對值為3℃以上、60℃以下,且上述吸熱峰頂溫度與上述第2放熱峰頂溫度之差之絕對值為5℃以上、60℃以下。 The conductive material of claim 2, wherein the absolute value of the difference between the endothermic peak top temperature and the first exothermic peak top temperature is 3°C or more and 60°C or less, and the endothermic peak top temperature and the second exothermic peak top temperature The absolute value of the difference is above 5℃ and below 60℃. 如請求項1或2之導電材料,其中上述吸熱峰之高溫側之峰結束溫度低 於最高溫側之上述放熱峰之高溫側之峰結束溫度。 Such as the conductive material of claim 1 or 2, wherein the end temperature of the peak on the high temperature side of the endothermic peak is low The peak end temperature on the high temperature side of the above exothermic peak on the highest temperature side. 如請求項1或2之導電材料,其中上述吸熱峰之高溫側之峰結束溫度低於最高溫側之上述放熱峰之高溫側之峰結束溫度,且上述吸熱峰之低溫側之峰起始溫度高於最低溫側之上述放熱峰之低溫側之峰起始溫度。 The conductive material of claim 1 or 2, wherein the end temperature of the peak on the high temperature side of the endothermic peak is lower than the peak end temperature on the high temperature side of the exothermic peak on the highest temperature side, and the peak start temperature on the low temperature side of the endothermic peak is higher than the lowest The peak start temperature on the low temperature side of the above exothermic peak on the warm side. 如請求項1或2之導電材料,其中上述導電性粒子為焊料粒子。 The conductive material of claim 1 or 2, wherein the conductive particles are solder particles. 如請求項1或2之導電材料,其於上述導電性粒子之外表面存在羧基。 The conductive material of claim 1 or 2 has a carboxyl group on the outer surface of the conductive particle. 如請求項1或2之導電材料,其於25℃下為液狀且為導電糊。 Such as the conductive material of claim 1 or 2, which is liquid and conductive paste at 25°C. 一種連接構造體,其具備表面具有至少1個第1電極之第1連接對象構件、表面具有至少1個第2電極之第2連接對象構件、及將上述第1連接對象構件與上述第2連接對象構件連接之連接部,且上述連接部為如請求項1至8中任一項之導電材料之硬化物,上述第1電極與上述第2電極利用上述連接部中之焊料部進行電性連接。 A connection structure comprising a first connection object member having at least one first electrode on the surface, a second connection object member having at least one second electrode on the surface, and connecting the first connection object member and the second The connection part to which the object member is connected, and the connection part is a hardened product of a conductive material as in any one of claims 1 to 8, and the first electrode and the second electrode are electrically connected by the solder part in the connection part . 如請求項9之連接構造體,其中於沿上述第1電極、上述連接部及上述第2電極之積層方向觀察上述第1電極與上述第2電極之互相對向之部分時,於上述第1電極與上述第2電極之互相對向之部分之面積100%中之50%以上配置有上述連接部中之焊料部。 The connection structure of claim 9, wherein when the portion of the first electrode and the second electrode facing each other is viewed in the direction of the stacking of the first electrode, the connecting portion, and the second electrode, the first electrode More than 50% of the 100% of the area of the portion of the electrode and the second electrode facing each other is provided with the solder portion in the connection portion.
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