TW201714503A - Exposure data correction device, wiring pattern formation system, and method for manufacturing wiring substrate - Google Patents

Exposure data correction device, wiring pattern formation system, and method for manufacturing wiring substrate Download PDF

Info

Publication number
TW201714503A
TW201714503A TW105122459A TW105122459A TW201714503A TW 201714503 A TW201714503 A TW 201714503A TW 105122459 A TW105122459 A TW 105122459A TW 105122459 A TW105122459 A TW 105122459A TW 201714503 A TW201714503 A TW 201714503A
Authority
TW
Taiwan
Prior art keywords
data
finishing
pattern
upper base
value
Prior art date
Application number
TW105122459A
Other languages
Chinese (zh)
Other versions
TWI624200B (en
Inventor
山本哲平
中山肇
荻野晴夫
磯田聰
前田晃
山田亮
Original Assignee
日立化成股份有限公司
思可林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日立化成股份有限公司, 思可林集團股份有限公司 filed Critical 日立化成股份有限公司
Publication of TW201714503A publication Critical patent/TW201714503A/en
Application granted granted Critical
Publication of TWI624200B publication Critical patent/TWI624200B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058Mask illumination systems
    • G03F7/70091Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

To minimize error in the exposure data correction amount and improve circuit width accuracy while reducing the effort involved in manually measuring lower base data. An exposure data correction device for: acquiring first upper base data based on data obtained from the upper base of a first actual pattern, which is obtained by circuit processing involving the use of exposure data based on design data; acquiring lower base data based on data obtained from the lower base of the first actual pattern; determining the correlation between the first upper base data and the lower base data; acquiring second upper base data based on data obtained from the upper base in a region including a different region of the first actual pattern or data obtained from the upper base of a second actual pattern different from the first actual pattern; determining a correction function on the basis of the correlation, the second upper base data, and design data for the actual pattern used to obtain the second upper base data; and correcting, on the basis of the correction function, the exposure data for the actual pattern used to obtain the second upper base data.

Description

曝光資料校正裝置、配線圖案形成系統、及配線基板的製造方法Exposure data correction device, wiring pattern forming system, and method of manufacturing wiring substrate

本發明關於曝光資料校正裝置、配線圖案形成系統、及配線基板的製造方法,更特別關於用來製造在電子機器等中所使用到之配線基板之曝光資料校正裝置、配線圖案形成系統、及配線基板的製造方法。The present invention relates to an exposure data correction device, a wiring pattern forming system, and a method of manufacturing a wiring board, and more particularly to an exposure data correction device, a wiring pattern forming system, and a wiring for manufacturing a wiring substrate used in an electronic device or the like. A method of manufacturing a substrate.

隨著電子機器的高性能化與小型化之趨勢,對於在電子機器中所使用到之配線基板,也希望能夠藉由配線圖案的細線化而達成高密度化。With the trend toward higher performance and miniaturization of electronic devices, it is desirable to increase the density of the wiring boards used in electronic devices by thinning the wiring patterns.

作為用來對應這種藉由配線圖案的細線化來達成高密度化的配線圖案形成方法,已經有想出一種方法,是將直接描繪式的曝光裝置(DI)與光學式檢查裝置(AOI)加以組合,其中該曝光裝置(DI)以雷射光或UV-LED(紫外線發光二極體)光等來將曝光圖案直接照射至感光性光阻層,而該光學式檢查裝置(AOI)利用反射光讀取以蝕刻等方式實際形成出來的實體圖案,並與原本的資料(設計資料)進行比較,上述方法將蝕刻後之實際的精加工資料導入至光學式外觀檢查裝置(AOI),並回授至曝光裝置(DI)(專利文獻1~3)。As a wiring pattern forming method for achieving such a high density by the thinning of the wiring pattern, a method has been devised which is a direct drawing type exposure apparatus (DI) and an optical inspection apparatus (AOI). In combination, the exposure device (DI) directly irradiates the exposure pattern to the photosensitive photoresist layer with laser light or UV-LED (ultraviolet light-emitting diode) light or the like, and the optical inspection device (AOI) utilizes reflection The physical pattern formed by etching or the like is read by light, and compared with the original material (design data), the above method is used to introduce the actual finished processed material into the optical appearance inspection device (AOI), and return it. The exposure apparatus (DI) is granted (Patent Documents 1 to 3).

(先前技術文獻) [專利文獻] 專利文獻1:日本特開2005-116929號公報。 專利文獻2:日本特開2006-303229號公報。 專利文獻3:日本特開2007-033764號公報。(Prior Art Document) [Patent Document] Patent Document 1: Japanese Laid-Open Patent Publication No. 2005-116929. Patent Document 2: Japanese Laid-Open Patent Publication No. 2006-303229. Patent Document 3: Japanese Laid-Open Patent Publication No. 2007-033764.

(發明所欲解決的問題) 如第17圖所示,實體圖案為具有上底(頂部)與下底(底部)的凸狀形狀,而精加工值,例如配線圖案(以下也會單純稱為「圖案」)的電路寬度在頂部寬度1702與底部寬度1704間並不相同。對於配線圖案的高密度化來說,縮小設計值與底部寬度的誤差是很重要的。若使用光學式外觀檢查裝置(AOI),雖然能夠比較容易地進行精加工值測量,但利用AOI所測量到的精加工值是頂部寬度,無法得到底部寬度的資料。因此即便使用AOI的測量值回授至DI來進行曝光資料的校正,仍然有著因頂部寬度與底部寬度之差值而導致有誤差產生的問題。(Problem to be Solved by the Invention) As shown in Fig. 17, the solid pattern has a convex shape having an upper bottom (top) and a lower bottom (bottom), and a finishing value such as a wiring pattern (hereinafter also referred to simply as The circuit width of the "pattern" is not the same between the top width 1702 and the bottom width 1704. For the high density of the wiring pattern, it is important to reduce the error between the design value and the bottom width. When an optical visual inspection device (AOI) is used, although the finishing value measurement can be performed relatively easily, the finishing value measured by the AOI is the top width, and the data of the bottom width cannot be obtained. Therefore, even if the measurement value of the AOI is fed back to the DI for correction of the exposure data, there is still a problem that an error occurs due to the difference between the top width and the bottom width.

雖然可使用顯微鏡來測量底部寬度,但由於需要手動操作而需要大量的測量時間。若為了減輕測量的負擔而以將測量位置減少之方式來進行測量,則會有因為無法得到足夠的樣本而不能夠進行正確的回授的問題Although a microscope can be used to measure the bottom width, a large amount of measurement time is required due to the need for manual operation. If the measurement is performed in such a manner as to reduce the measurement position in order to reduce the burden of measurement, there may be a problem that the correct feedback cannot be performed because sufficient samples cannot be obtained.

本發明的目的在於提供一種曝光資料校正裝置、配線圖案形成系統、以配線基板的製造方法,其可減低下底(底部)資料的手動測量所造成的勞力消耗,並抑制曝光資料校正量的誤差,而提高微細電路形成時的電路寬度精準度。An object of the present invention is to provide an exposure data correction device, a wiring pattern forming system, and a method of manufacturing a wiring substrate, which can reduce labor consumption caused by manual measurement of bottom (bottom) data, and suppress error of exposure data correction amount , to improve the accuracy of the circuit width when forming a fine circuit.

(用來解決問題的手段) 本發明是有鑑於上述問題而完成,具有如以下之特徵。亦即,本發明的一實施態樣之曝光資料校正裝置,執行以下動作:取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、與用來抑制該差值之校正量;以及,基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正。(Means for Solving the Problem) The present invention has been made in view of the above problems, and has the following features. That is, the exposure data correcting apparatus according to an embodiment of the present invention performs the operation of acquiring the first upper base data based on the first solid pattern having the convex shape of the upper bottom and the lower bottom. The data obtained by the upper bottom in at least a part of the area, the first physical pattern is obtained by circuit processing, and the circuit processing uses exposure data based on design data for the target wiring pattern; and the bottom material is obtained. The bottom material is based on data obtained from a lower bottom in at least a portion of the first entity pattern; determining a correlation between the first upper base data and the lower base data; obtaining a second upper base data, the second upper The bottom material is based on data obtained from an upper base in an area, wherein the aforementioned one area contains an area different from at least a part of the area of the first physical pattern, or the second upper base data is based on the upper base from the second physical pattern The obtained data, wherein the second physical pattern is different from the first physical pattern; and based on design data for obtaining a physical pattern of the second upper material, The second upper base data and the foregoing correlation relationship are used to determine a correction function, which indicates a relationship between the two: causing a difference between the finishing value specified in the design data and the finishing value in the solid pattern. And a correction amount for suppressing the difference; and correcting the exposure data for obtaining the physical pattern of the second upper base data based on the correction function.

本發明亦可包含以下特徵:本發明中的前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述另外二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述另外二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的動作,包含以下動作:基於前述第1上底資料中的校正量資料,決定第1暫定校正函數;基於前述下底資料中的校正量資料,決定第2暫定校正函數;以及,基於自前述第1暫定校正函數所得到之校正量與對應於該校正量之自第2暫定校正函數所得到之校正量的差值,製作校正量差值函數;並且,決定前述校正函數的動作,包含以下動作:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定第3暫定校正函數;以及,基於前述校正量差值函數,對前述第3暫定校正函數進行修正,以決定校正函數。The present invention may also include the following feature: the first background data in the present invention includes correction amount data based on a difference between the following two finishing values: an upper base in at least a portion of the aforementioned first solid pattern a measured finishing value and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the bottom material includes a difference between the following two finishing values The correction amount data: a finishing value measured in a lower bottom portion in at least a part of the first solid pattern, and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value The second upper base data includes correction amount data based on the difference between the two finishing values, and one of the two finishing values is a finishing value measured in the upper base in one region. Wherein the one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is the first entity map corresponding to the previous finishing value The finishing value specified in the design data used; or the second upper data includes correction data based on the difference between the other two finishing values, one of the other two finishing values is a finishing value measured on the upper bottom of the second solid pattern different from the first solid pattern, and the other of the other two finishing values is the second corresponding to the previous finishing value The finishing value specified in the design data for the solid pattern; the operation for determining the correlation relationship includes the following operation: determining the first tentative correction function based on the correction amount data in the first upper base data; The correction amount data in the determination determines a second tentative correction function; and, based on the difference between the correction amount obtained from the first provisional correction function and the correction amount obtained from the second tentative correction function corresponding to the correction amount, Creating a correction amount difference function; and determining the operation of the correction function includes the following operations: design data based on the physical pattern for obtaining the second upper base data, and the foregoing 2 on the base material, the third tentative decision correction function; and, based on the difference function and the correction amount, the correction of the third provisional correction function to determine the correction function.

又,本發明亦可包含以下特徵:前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值;前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的動作,包含以下動作:決定第1精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述第1上底資料中的精加工值;決定第2精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述下底資料中的精加工值;以及,決定精加工值差值函數,其基於前述第1精加工值函數與第2精加工值函數的差值;並且,決定前述校正函數的動作,包含以下動作:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述精加工值差值函數,對前述暫定校正函數進行修正,以決定校正函數。Furthermore, the present invention may be characterized in that the first background data includes a finishing value measured in at least a portion of the upper base of the first solid pattern; and the bottom material is included in the first a finishing value measured in at least a portion of the lower base of the solid pattern; the second upper base data includes correction amount data based on a difference between the two finishing values, one of the two finishing values a finishing value measured in a top of a region, wherein the one region contains a region different from at least a portion of the first solid pattern, and the other of the two finishing values is a finishing value specified in the design data for the first solid pattern corresponding to the previous finishing value; or the second background data includes a correction amount based on a difference between the other two finishing values One of the two finishing values is a finishing value measured on the upper bottom of the second solid pattern different from the first solid pattern, and the other of the two finishing values is a finishing value defined in the design data for the second solid pattern corresponding to the previous finishing value; and an operation for determining the correlation relationship includes an operation of determining a first finishing value function indicating the following Relationship between the factors resulting from the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the finishing value in the first upper base data; determining the second finishing value function , which indicates the relationship between the difference between the finishing value specified in the design data and the finishing value in the physical pattern, and the finishing value in the aforementioned bottom data; a finishing value difference function based on a difference between the first finishing value function and the second finishing value function; and determining an operation of the correction function includes the following operation: based on obtaining the second upper data The design data for the physical pattern and the second upper base data determine a tentative correction function; and correct the tentative correction function based on the difference value function of the finishing value To determine the correction function.

進一步,本發明亦可包含以下特徵:前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的動作,包含以下動作:決定以下二個校正量的校正量相關函數:前述第1上底資料中的校正量資料中所示的校正量、及與該校正量對應之前述下底資料中的校正量資料中所示的校正量;並且,決定前述校正函數的動作,包含以下動作:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述校正量相關函數,對前述暫定校正函數進行修正,以決定校正函數。Further, the present invention may further include the following feature: the first upper base data includes correction amount data based on a difference between the following two finishing values: measured by an upper base in at least a portion of the first physical pattern a finishing value obtained by the finishing value and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; and the lower bottom data includes a correction based on a difference between the following two finishing values The amount of data: a finishing value measured in a lower bottom portion in at least a part of the first solid pattern, and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; The second upper base data includes correction amount data based on the difference between the two finishing values, one of the two finishing values being a finishing value measured in the upper base in one region, wherein The one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is the first solid pattern corresponding to the previous finishing value The finishing value specified in the design data; or the second upper data includes correction data based on the difference between the other two finishing values, one of the two finishing values is a finishing value measured by the upper bottom of the second solid pattern different in the first solid pattern, and the other of the two finishing values is the second solid pattern corresponding to the previous finishing value The finishing value specified in the design data; the action determining the correlation relationship includes the following actions: determining the correction amount correlation function of the following two correction amounts: the correction shown in the correction amount data in the first upper base data And a correction amount shown in the correction amount data in the bottom data corresponding to the correction amount; and determining the operation of the correction function includes the following actions: based on the entity used to obtain the second upper data The design data for the pattern and the second upper base data determine a tentative correction function; and, based on the correction amount correlation function, correct the tentative correction function to determine the correction Number.

又進一步,本發明亦可包含以下特徵:前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值;前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者,前述第2上底資料,包含在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值;決定前述相關關係的動作,包含以下動作:決定以下二個精加工值的精加工值相關函數:在前述第1上底資料中所測量到的精加工值、以及在前述下底資料中所測量到的精加工值;並且,決定前述校正函數的動作,包含以下動作:基於已被決定的精加工值相關函數,並基於前述第2上底資料中的精加工值來計算出與該精加工值對應之下底中的精加工值的推算值;以及,基於以下二個精加工值的差值來決定校正函數:用來得到前述第2上底資料之實體圖案用的設計資料中所規定的精加工值、及對應於該精加工值之前述被推算出來的下底中的精加工值。Furthermore, the present invention may further include the feature that the first supernatant material includes a finishing value measured in at least a portion of the upper base of the first solid pattern; and the bottom material is included in the foregoing a finishing value measured in at least a portion of the lower base of the solid pattern; the second upper base data comprising a finishing value measured by the upper base in a region, wherein the aforementioned one region contains the foregoing a region in which at least a part of the solid pattern has a different region, or the second upper data includes a finishing value measured on an upper base of the second solid pattern different from the first solid pattern; and the correlation is determined The action includes the following actions: determining a finishing value correlation function of the following two finishing values: a finishing value measured in the first upper base data, and a finishing value measured in the aforementioned lower base data And determining the action of the aforementioned correction function includes the following actions: based on the refined value correlation function that has been determined, and based on the fine addition in the second upper base data The work value is used to calculate an estimated value of the finishing value in the bottom corresponding to the finishing value; and the correction function is determined based on the difference between the following two finishing values: used to obtain the second upper base data The finishing value specified in the design data for the solid pattern and the finishing value in the lower base corresponding to the above-described calculated finishing value.

前述第1上底資料和前述第2上底資料中所含的精加工值,可為基於利用光學式外觀檢查裝置而得到的資料之精加工值;前述下底資料,可為基於利用顯微鏡而得到的資料之下底資料。The finishing value included in the first upper base data and the second upper base data may be a finishing value based on data obtained by using an optical appearance inspection device; and the lower bottom data may be based on using a microscope. The information obtained is the bottom information.

前述校正函數,能以配置有配線圖案之相同基板面的各個區域為單位來分別決定。The correction function can be determined in units of respective regions of the same substrate surface on which the wiring patterns are arranged.

前述校正函數,能以在配置有配線圖案之相同基板的上表面和下表面為單位來分別決定。The correction function can be determined in units of the upper surface and the lower surface of the same substrate on which the wiring pattern is disposed.

前述校正函數,可針對配線圖案中的縱線和橫線的各者來分別決定。The correction function described above can be determined for each of the vertical line and the horizontal line in the wiring pattern.

又,本發明的配線圖案形成系統,具備:曝光資料製作手段,其製作曝光資料,該曝光資料基於作為目標的配線圖案之設計資料;圖案曝光手段,其基於曝光資料,在被配置在基板上之感光性光阻層上曝光出曝光圖案;顯影圖案形成手段,其對曝光出前述曝光圖案之感光性光阻層進行顯影,以形成顯影圖案;實體圖案形成手段,其針對形成有前述顯影圖案之基板進行電路加工,以形成實體圖案;上底資料製作手段,其製作上底資料,該上底資料基於自前述實體圖案的至少一部分區域中的上底所得到的資料;下底資料製作手段,其製作下底資料,該下底資料基於自前述實體圖案的至少一部分區域中的下底所得到的資料;以及,前述的曝光資料校正裝置,其基於前述上底資料、下底資料和設計資料來校正曝光資料。Further, the wiring pattern forming system of the present invention includes: an exposure data creating means for creating exposure data based on design data of a target wiring pattern; and pattern exposure means for being disposed on the substrate based on exposure data Exposing an exposure pattern on the photosensitive photoresist layer; developing a pattern forming means for developing the photosensitive photoresist layer exposing the exposure pattern to form a developing pattern; and a solid pattern forming means for forming the developing pattern The substrate is processed by a circuit to form a solid pattern; and the upper substrate is formed by means of a substrate for making an upper base material based on data obtained from an upper base in at least a portion of the solid pattern; Forming a bottom material based on data obtained from a lower bottom in at least a portion of the foregoing solid pattern; and the aforementioned exposure data correcting device based on the aforementioned upper base data, lower base data, and design Data to correct exposure data.

又,本發明之一實施態樣中的用來校正曝光資料之程式,使電腦執行以下步驟:取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;以及,基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正。Moreover, the program for correcting exposure data in an embodiment of the present invention causes the computer to perform the following steps: obtaining the first upper base data based on the convex shape having the upper bottom and the lower bottom The material obtained by the upper bottom in at least a part of the first solid pattern, the first solid pattern is obtained by circuit processing, and the circuit processing uses exposure data based on design data for the target wiring pattern; The bottom data is based on data obtained from the bottom of at least a portion of the pattern of the first entity; determining the correlation between the first base material and the bottom material; obtaining the second base data The second background data is based on data obtained from an upper base in an area, wherein the one area contains an area different from at least a part of the first physical pattern, or the second upper base data is based on the second a material obtained by the upper base of the solid pattern, wherein the second solid pattern is different from the first solid pattern; and is based on a solid pattern for obtaining the second upper base data The design data, the aforementioned second base data, and the aforementioned correlation relationship are used to determine a correction function indicating a relationship between the following two values: the finishing value specified in the design data and the finishing value in the solid pattern. a factor of the difference value and a correction amount for suppressing the difference; and correcting the exposure data for obtaining the solid pattern of the second upper base data based on the correction function.

又,本發明之一實施態樣中的用來校正曝光資料之方法,包含以下步驟:取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;以及,基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正。Moreover, a method for correcting exposure data in an embodiment of the present invention includes the steps of: obtaining a first upper base data based on a first convex shape having an upper bottom and a lower bottom; The material obtained by the upper bottom in at least a part of the solid pattern, the first physical pattern is obtained by circuit processing, and the circuit processing uses exposure data based on design data for the target wiring pattern; And the data obtained based on the bottom bottom in at least a part of the area of the first entity pattern; determining the correlation between the first upper base data and the bottom material; and obtaining the second upper base data, The second upper base data is based on data obtained from an upper base in an area, wherein the one area includes an area different from at least a part of the area of the first physical pattern, or the second upper base data is based on the second physical pattern The data obtained by the upper bottom, wherein the second physical pattern is different from the first physical pattern; and the design is based on a solid pattern for obtaining the second upper data. The second base material and the aforementioned correlation relationship are used to determine a correction function, which represents a relationship between the following two factors: the difference between the finishing value specified in the design data and the finishing value in the solid pattern. a factor of generating a value, and a correction amount for suppressing the difference; and correcting exposure data for obtaining the physical pattern of the second upper base data based on the correction function.

進一步,本發明之一實施態樣中的配線基板製造方法,包含以下步驟:取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正;以及,基於前述曝光資料,形成配線圖案。Further, a method of manufacturing a wiring board according to an embodiment of the present invention includes the steps of: obtaining a first upper base material based on a first solid pattern having a convex shape of an upper bottom and a lower bottom; The data obtained by the upper bottom in at least a part of the area, the first physical pattern is obtained by circuit processing, and the circuit processing uses exposure data based on design data for the target wiring pattern; and the bottom material is obtained. The bottom material is based on data obtained from a lower bottom in at least a portion of the first entity pattern; determining a correlation between the first upper base data and the lower base data; obtaining a second upper base data, the second upper The bottom material is based on data obtained from an upper base in an area, wherein the aforementioned one area contains an area different from at least a part of the area of the first physical pattern, or the second upper base data is based on the upper base from the second physical pattern The obtained data, wherein the second physical pattern is different from the first physical pattern; and the design capital for use in obtaining the physical pattern of the second upper base data The second upper base data and the foregoing correlation relationship are used to determine a correction function indicating a relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern. a factor of occurrence, and a correction amount for suppressing the difference; correcting exposure data for obtaining a physical pattern of the second upper base data based on the correction function; and forming a wiring pattern based on the exposure data .

又,本發明亦可包含以下特徵:前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的步驟,包含以下步驟:基於前述第1上底資料中的校正量資料,決定第1暫定校正函數;基於前述下底資料中的校正量資料,決定第2暫定校正函數;以及,基於自前述第1暫定校正函數所得到之校正量與對應於該校正量之自第2暫定校正函數所得到之校正量的差值,製作校正量差值函數;並且,決定前述校正函數的步驟,包含以下步驟:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定第3暫定校正函數;以及,基於前述校正量差值函數,對前述第3暫定校正函數進行修正,以決定校正函數。Furthermore, the present invention may further include the feature that the first upper base data includes correction amount data based on a difference between two finishing values: measured in an upper base in at least a portion of the first physical pattern a finishing value obtained by the finishing value and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; and the lower bottom data includes a correction based on a difference between the following two finishing values The amount of data: a finishing value measured in a lower bottom portion in at least a part of the first solid pattern, and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; The second upper base data includes correction amount data based on the difference between the two finishing values, one of the two finishing values being a finishing value measured in the upper base in one region, wherein The one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is for the first solid pattern corresponding to the previous finishing value The finishing value specified in the data; or the second upper data includes correction data based on the difference between the other two finishing values, one of the two finishing values is in the foregoing a finishing value measured by the upper bottom of the second solid pattern different from the first solid pattern, and the other of the two finishing values is for the second solid pattern corresponding to the previous finishing value The finishing value specified in the design data; the step of determining the correlation relationship includes the following steps: determining the first tentative correction function based on the correction amount data in the first upper base data; based on the correction amount in the foregoing bottom data Data, determining a second tentative correction function; and generating a correction amount difference based on a difference between a correction amount obtained from the first provisional correction function and a correction amount obtained from the second provisional correction function corresponding to the correction amount And a step of determining the foregoing correction function, comprising the steps of: designing data for obtaining a physical pattern of the second upper base data and the second upper base data, 3 provisional correction function; and, based on the difference function and the correction amount, the correction of the third provisional correction function to determine the correction function.

本發明亦可包含以下特徵:前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值;前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的步驟,包含以下步驟:決定第1精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述第1上底資料中的精加工值;決定第2精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述下底資料中的精加工值;以及,決定精加工值差值函數,其基於前述第1精加工值函數與第2精加工值函數的差值;並且,決定前述校正函數的步驟,包含以下步驟:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述精加工值差值函數,對前述暫定校正函數進行修正,以決定校正函數。The present invention may further include the feature that the first supernatant material includes a finishing value measured in at least a portion of an upper base of the first solid pattern; and the bottom material is included in the first solid pattern. a finishing value measured in at least a portion of the lower base; the second upper base data includes correction amount data based on a difference between the two finishing values, one of the two finishing values, Is a finishing value measured in the upper base in a region, wherein the aforementioned one region contains a region different from at least a portion of the first solid pattern, and the other of the two finishing values is a finishing value specified in the design data for the first solid pattern corresponding to the previous finishing value; or the second background data includes correction amount data based on the difference between the other two finishing values, the foregoing One of the two finishing values is a finishing value measured on the upper base of the second solid pattern different from the first solid pattern, and the other of the two finishing values is a finishing value defined in the design data for the second solid pattern corresponding to the previous finishing value; and a step of determining the correlation relationship, comprising the step of: determining a first finishing value function, which represents the following Relationship: a factor causing a difference between a finishing value specified in the design data and a finishing value in the solid pattern, and a finishing value in the first upper base data; determining a second finishing value function, Represents the relationship between the difference between the finishing value specified in the design data and the finishing value in the physical pattern, and the finishing value in the aforementioned bottom material; and, determining the finishing a value difference function based on the difference between the first finishing value function and the second finishing value function; and the step of determining the correction function includes the following steps: based on the entity used to obtain the second upper data The design data for the pattern and the second upper base data determine a tentative correction function; and, based on the difference value function of the finishing value, correct the tentative correction function to Determine the correction function.

本發明亦可包含以下特徵:前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的步驟,包含以下步驟:決定以下二個校正量的校正量相關函數:前述第1上底資料中的校正量資料中所示的校正量、及與該校正量對應之前述下底資料中的校正量資料中所示的校正量;並且,決定前述校正函數的步驟,包含以下步驟:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述校正量相關函數,對前述暫定校正函數進行修正,以決定校正函數。The present invention may also include the following feature: the first upper base data includes correction amount data based on a difference between the following two finishing values: measured by the upper base in at least a part of the area of the first physical pattern a finishing value and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the bottom material includes a correction amount based on a difference between the following two finishing values a finishing value measured in a lower bottom in at least a part of the first solid pattern, and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the second The upper base data includes correction amount data based on a difference between the two finishing values, one of the two finishing values being a finishing value measured in the upper base in an area, wherein the aforementioned one The region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is a design for the first solid pattern corresponding to the previous finishing value The finishing value specified in the material; or the second upper base data includes correction amount data based on the difference between the other two finishing values, one of the two finishing values is in the foregoing a finishing value measured by the upper bottom of the second solid pattern having different physical patterns, and the other of the two finishing values is a design for the second solid pattern corresponding to the previous finishing value The finishing value specified in the data; the step of determining the correlation relationship includes the following steps: determining a correction amount correlation function of the following two correction amounts: the correction amount shown in the correction amount data in the first upper base data, And a correction amount shown in the correction amount data in the foregoing bottom data corresponding to the correction amount; and the step of determining the correction function includes the step of: based on the solid pattern for obtaining the second upper base data The design data and the second upper base data determine a tentative correction function; and, based on the correction amount correlation function, correct the tentative correction function to determine a correction function.

本發明亦可包含以下特徵:前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值;前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者,前述第2上底資料,包含在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值;決定前述相關關係的步驟,包含以下步驟:決定以下二個精加工值的精加工值相關函數:在前述第1上底資料中所測量到的精加工值、以及在前述下底資料中所測量到的精加工值;並且,決定前述校正函數的步驟,包含以下步驟:基於已被決定的精加工值相關函數,並基於前述第2上底資料中的精加工值來計算出與該精加工值對應之下底中的精加工值的推算值;以及,基於以下二個精加工值的差值來決定校正函數:用來得到前述第2上底資料之實體圖案用的設計資料中所規定的精加工值、及對應於該精加工值之前述被推算出來的下底中的精加工值。The present invention may further include the feature that the first supernatant material includes a finishing value measured in at least a portion of an upper base of the first solid pattern; and the bottom material is included in the first solid pattern. a finishing value measured in at least a portion of the lower base; the second upper base data comprising a finishing value measured by an upper base in an area, wherein the aforementioned one area contains the first solid pattern a region in which at least a part of the region is different, or the second background data includes a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern; and the step of determining the correlation is included The following steps: determining a finishing value correlation function of the following two finishing values: a finishing value measured in the aforementioned first background data, and a finishing value measured in the foregoing lower base data; The step of determining the aforementioned correction function comprises the steps of: calculating based on the refined value correlation function that has been determined, and based on the finishing value in the second upper data described above And an estimated value of the finishing value in the bottom corresponding to the finishing value; and determining a correction function based on a difference between the following two finishing values: used to obtain the physical pattern of the second upper base data The finishing value specified in the design data and the finishing value in the lower base corresponding to the calculated finishing value.

前述第1上底資料和前述第2上底資料中所含的精加工值,可為基於利用光學式外觀檢查裝置而得到的資料之精加工值;前述下底資料,可為基於利用顯微鏡而得到的資料之下底資料。The finishing value included in the first upper base data and the second upper base data may be a finishing value based on data obtained by using an optical appearance inspection device; and the lower bottom data may be based on using a microscope. The information obtained is the bottom information.

前述校正函數,能以配置有配線圖案之相同基板面的各個區域為單位來分別決定。The correction function can be determined in units of respective regions of the same substrate surface on which the wiring patterns are arranged.

前述校正函數,能以配置有配線圖案之相同基板的上表面和下表面為單位來分別決定。The correction function can be determined in units of the upper surface and the lower surface of the same substrate on which the wiring pattern is arranged.

前述校正函數,可針對配線圖案中的縱線和橫線的各者來分別決定。The correction function described above can be determined for each of the vertical line and the horizontal line in the wiring pattern.

本發明的一實施態樣中的配線基板製造方法,包含以下步驟:製作曝光資料,該曝光資料基於作為目標的配線圖案之設計資料;基於曝光資料,在被配置在基板上之感光性光阻層上曝光出曝光圖案;對曝光出前述曝光圖案之感光性光阻層進行顯影,以形成顯影圖案;針對形成有前述顯影圖案之基板進行電路加工,以形成第1實體圖案;製作第1上底資料,該第1上底資料基於自前述第1實體圖案的至少一部分區域中的上底所得到的資料;製作下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料之相關關係;製作第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正;以及,基於前述已校正過的曝光資料,形成配線圖案。A method of manufacturing a wiring substrate according to an embodiment of the present invention includes the steps of: producing exposure data based on design data of a target wiring pattern; and photosensitive photoresist disposed on the substrate based on exposure data Exposing an exposure pattern on the layer; developing the photosensitive photoresist layer exposing the exposure pattern to form a development pattern; performing circuit processing on the substrate on which the development pattern is formed to form a first solid pattern; a bottom material, which is based on data obtained from an upper base in at least a portion of the first physical pattern; and a bottom material based on at least a portion of the first physical pattern The information obtained at the bottom; determining the correlation between the first upper base data and the aforementioned lower base data; producing the second upper base data based on the information obtained from the upper base in a region, Wherein the foregoing one region contains a region different from at least a portion of the first solid pattern, or the second upper substrate is based on the second The data obtained by the upper layer of the volume pattern, wherein the second solid pattern is different from the first solid pattern; the design data for the physical pattern for obtaining the second upper base material, the second upper base material, and the foregoing Correlation, to determine a correction function, the correction function indicating a relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the suppression of the a correction amount of the difference; correcting exposure data for obtaining the physical pattern of the second upper base data based on the correction function; and forming a wiring pattern based on the corrected exposure data.

(發明的功效) 根據本發明,能夠提供一種曝光資料校正裝置、配線圖案形成系統、以配線基板的製造方法,其可減低下底資料的手動測量所造成的勞力消耗,並基於上底資料(AOI測量資料)與實體圖案的下底資料的相關關係來抑制曝光資料校正量的誤差值,而提高微細電路形成時的電路寬度精準度。(Effect of the Invention) According to the present invention, it is possible to provide an exposure data correction device, a wiring pattern forming system, and a method of manufacturing a wiring substrate, which can reduce labor consumption caused by manual measurement of lower base data, and based on the upper base data ( The correlation between the AOI measurement data and the underlying data of the solid pattern suppresses the error value of the exposure data correction amount, and improves the circuit width accuracy when the micro circuit is formed.

[第1實施型態] 第1圖表示本發明的一實施型態的配線圖案形成系統100的概略圖。配線圖案形成系統100,具備:設計資料製作裝置101、曝光資料製作裝置102、曝光裝置104、顯影圖案製作裝置106、實體圖案製作裝置108、上底和下底資料製作裝置110、及曝光資料校正裝置112。[First Embodiment] Fig. 1 is a schematic view showing a wiring pattern forming system 100 according to an embodiment of the present invention. The wiring pattern forming system 100 includes a design data creation device 101, an exposure data creation device 102, an exposure device 104, a development pattern creation device 106, a physical pattern creation device 108, an upper and lower bottom data creation device 110, and exposure data correction. Device 112.

設計資料製作裝置101,為製作設計資料的裝置,在本實施型態中使用CAD(Computer Aided Design,電腦輔助設計)。配線圖案的設計資料(原本資料),是將要形成之目標的配線圖案加以資料化後的結果,例如是以座標與電路寬度來加以表示。亦可具有被附加上曝光所需之資訊的資料。本發明中,能夠使用任意的配線圖案。The design data creation device 101 is a device for creating design data, and CAD (Computer Aided Design) is used in the present embodiment. The design information (original material) of the wiring pattern is the result of data recording of the wiring pattern to be formed, and is expressed, for example, by coordinates and circuit width. It may also have information attached to the information required for exposure. In the present invention, any wiring pattern can be used.

曝光資料製作裝置102,是根據設計資料來製作曝光資料的裝置,此處使用CAM(Computer Aided Manufacturing,電腦輔助製造)。曝光裝置104,是基於由曝光資料製作裝置102所製作出的曝光資料,將曝光圖案曝光在被配置於基板上之感光性光阻層上的裝置。例如,能夠使用直接描繪裝置(DI:Direct Imaging),其使用雷射光或UV-LED光,直接將曝光圖案曝光在感光性光阻層上。曝光資料,是用來藉由使用雷射光或UV-LED光之直線描繪裝置等之曝光裝置,讓感光性光阻層針對與配線圖案對應的曝光圖案進行感光並加以形成的資料。The exposure data creation device 102 is a device for creating exposure data based on design data, and CAM (Computer Aided Manufacturing) is used here. The exposure device 104 is a device that exposes an exposure pattern to a photosensitive resist layer disposed on a substrate based on exposure data created by the exposure data creation device 102. For example, a direct drawing device (DI: Direct Imaging) capable of directly exposing an exposure pattern on a photosensitive photoresist layer using laser light or UV-LED light can be used. The exposure data is a material for sensitizing the photosensitive resist layer to an exposure pattern corresponding to the wiring pattern by an exposure device such as a linear drawing device using laser light or UV-LED light.

所謂感光性光阻層,是指藉由微影法對銅箔等的金屬箔進行蝕刻來形成配線圖案時所使用的蝕刻光阻層。所謂曝光圖案,是指基於曝光資料而被曝光至感光性光阻層上的圖案,並且對應於根據之後的顯影步驟來形成的顯影圖案。顯影圖案製作裝置106,是對已曝光出曝光圖案之感光性光阻層加以顯影,以形成顯影圖案的裝置。The photosensitive photoresist layer is an etched photoresist layer used when a metal foil such as a copper foil is etched by a lithography method to form a wiring pattern. The exposure pattern refers to a pattern that is exposed onto the photosensitive photoresist layer based on the exposure data, and corresponds to a development pattern formed in accordance with a subsequent development step. The developing pattern forming device 106 is a device that develops a photosensitive resist layer on which an exposure pattern has been exposed to form a developing pattern.

實體圖案製作裝置108,是對已形成顯影圖案之基板進行電路加工,以形成實體圖案的裝置。例如,能夠使用蝕刻裝置。所謂電路加工,是指形成實體圖案,例如可舉出以下方式:根據減去法(subtract)來蝕刻金屬箔以形成配線圖案。實體圖案能夠由實體圖案形成手段來加以形成。所謂實體圖案,是指進行電路形成處理而實際形成出來的配線圖案,例如可舉出:根據減去法來蝕刻金屬箔而獲得的配線圖案。The solid pattern making device 108 is a device that performs circuit processing on a substrate on which a developing pattern has been formed to form a solid pattern. For example, an etching device can be used. The circuit processing means forming a solid pattern, and for example, a method of etching a metal foil according to a subtraction to form a wiring pattern. The solid pattern can be formed by a solid pattern forming means. The solid pattern refers to a wiring pattern which is actually formed by performing a circuit formation process, and examples thereof include a wiring pattern obtained by etching a metal foil by a subtractive method.

上底和下底資料製作裝置110,是製作以實體圖案的上底(頂部)和下底(底部)的座標與電路寬度或間隙寬度等的精加工值來表示之資料的裝置。本實施型態中,使用光學式外觀檢查裝置(AOI:Automatic Optical Inspection)來製作上底資料。AOI,能夠用於檢測自實體圖案的上底(頂部)反射出來的光以將該圖案數值化,並作成以座標與電路寬度或間隙寬度等的精加工值來表示的資料。又,能夠使用具有測量功能的金屬顯微鏡(有時會單純稱為「顯微鏡」)來製作下底資料。此處,上底和下底資料製作裝置110,接收到使用顯微鏡所測量到的下底精加工值的輸入,並基於該下底精加工值來製作下底資料。The upper and lower bottom data creating apparatuses 110 are apparatuses for producing data represented by the coordinates of the upper bottom (top) and the lower bottom (bottom) of the solid pattern and the circuit width or the gap width. In the present embodiment, the upper substrate is produced using an optical visual inspection device (AOI: Automatic Optical Inspection). The AOI can be used to detect light reflected from the upper bottom (top) of the solid pattern to quantify the pattern and to make the data represented by the coordinates of the coordinates and the width of the circuit or the width of the gap. Further, a metal microscope having a measuring function (sometimes referred to simply as a "microscope") can be used to produce the lower substrate. Here, the upper and lower bottom data producing apparatus 110 receives the input of the lower bottom finishing value measured using the microscope, and creates the lower base data based on the lower bottom finishing value.

曝光資料校正裝置112,取得由上底和下底製作裝置110所製作出的第1上底資料和下底資料,並決定第1上底資料和下底資料的相關關係。進一步,取得由上底和下底製作裝置110所製作出的第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中上述區域含有與第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中上述第2實體圖案與第1實體圖案不同。並且,基於實體圖案(該實體圖案是用來得到第2上底資料)用的設計資料、第2上底資料、及已被決定的相關關係,針對設計資料中所規定的精加工值與實體圖案中的精加工值的差值來決定校正函數,然後基於校正函數來校正實體圖案用的曝光資料,其中該校正函數表示會造成該差值產生的因素與用來抑制該差值之校正量間的關係,且該實體圖案是用來得到第2上底資料。The exposure data correcting means 112 obtains the first upper base data and the lower base data produced by the upper and lower bottom making means 110, and determines the correlation between the first upper base data and the lower base data. Further, the second upper base material produced by the upper and lower bottom making means 110 is obtained, and the second upper base data is based on data obtained from the upper base in an area, wherein the area contains the first solid pattern At least a portion of the region is different, or the second background data is based on data obtained from the upper base of the second physical pattern, wherein the second physical pattern is different from the first physical pattern. And, based on the physical pattern (the physical pattern is used to obtain the second upper data), the design data, the second upper data, and the determined correlation, the finishing values and entities specified in the design data. The difference between the finishing values in the pattern determines a correction function, and then the exposure data for the solid pattern is corrected based on the correction function, wherein the correction function indicates a factor that causes the difference to be generated and a correction amount used to suppress the difference The relationship between the two, and the physical pattern is used to obtain the second upper data.

所謂會造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素,是指在設計資料的配線圖案規格中,會因為該因素有所變動,而造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生變化的因素。作為這樣的因素,可舉出以下的其中一者或是任意二者以上的組合:實體圖案的設計資料的圖案間隙、圖案尺寸、圖案厚度、圖案位置、圖案疏密、圖案形狀等。本實施型態中,作為造成實體圖案資料與原本資料間的差值產生的因素,是採用配線圖案的圖案間隙(在此為線與線的間隙)。所謂校正函數,是對造成差值產生的因素與用來抑制該差值之曝光資料的校正量間的關係加以規定的函數。The factor that causes the difference between the finishing value specified in the design data and the finishing value in the solid pattern refers to the design of the wiring pattern specification of the design data, which may be caused by the change of the factor. The difference between the finishing value specified in the data and the finishing value in the solid pattern changes. As such a factor, one of the following or a combination of any two or more of them: a pattern gap of a design material of a solid pattern, a pattern size, a pattern thickness, a pattern position, a pattern density, a pattern shape, and the like. In the present embodiment, as a factor causing a difference between the physical pattern material and the original material, a pattern gap (here, a line-to-line gap) of the wiring pattern is employed. The correction function is a function that defines a relationship between a factor causing the difference and a correction amount of the exposure data for suppressing the difference.

作為曝光資料校正裝置112,在本實施型態中,使用具備第2圖所示的硬體構成之電腦200。電腦200,具備:處理部(處理器)201、顯示部202、輸入部203、記憶部204、通訊部205、及連接這些構成零件的匯流排210。顯示部202顯示由在電腦200中執行的程式所輸出的影像。輸入部203是接收來自使用者的輸入之零件,例如為鍵盤或滑鼠。記憶部204只要是非揮發性記憶體或揮發性記憶體、硬碟等能夠儲存資訊的零件,則可為任何零件。用來執行曝光資料校正用的步驟之程式206被儲存於記憶部204中。通訊部205,進行無線通訊,或是利用乙太網路(登錄商標)纜線、USB(通用序列匯流排)纜線等來進行有線通訊。亦可經由通訊部205,來取得由上底和下底製作裝置110所製作出的上底資料和下底資料。一旦執行程式206,處理部(處理器)201便執行曝光資料校正用的步驟。曝光資料校正裝置112,不一定需要是泛用的電腦,亦可由用來執行各步驟的全部或是一部分之硬體、及與該硬體協同工作來運作的軟體來加以實現。As the exposure data correction device 112, in the present embodiment, the computer 200 having the hardware configuration shown in Fig. 2 is used. The computer 200 includes a processing unit (processor) 201, a display unit 202, an input unit 203, a storage unit 204, a communication unit 205, and a bus bar 210 that connects these components. The display unit 202 displays an image output by a program executed in the computer 200. The input unit 203 is a component that receives input from a user, such as a keyboard or a mouse. The memory unit 204 can be any component as long as it is a non-volatile memory, a volatile memory, or a hard disk or the like that can store information. A program 206 for performing the steps for correcting the exposure data is stored in the storage unit 204. The communication unit 205 performs wireless communication or performs wired communication using an Ethernet (registered trademark) cable or a USB (Universal Serial Bus) cable. The upper base data and the lower base data produced by the upper and lower bottom making apparatuses 110 can also be obtained via the communication unit 205. Once the program 206 is executed, the processing unit (processor) 201 performs the steps for the exposure data correction. The exposure data correction device 112 does not necessarily need to be a general-purpose computer, but may be implemented by hardware for performing all or a part of the steps and software that operates in cooperation with the hardware.

本實施型態中的系統的動作流程表示於第3圖。首先,設計資料製作裝置101製作第1實體圖案用的設計資料(步驟301),並且曝光資料製作裝置102基於此設計資料製作曝光資料(步驟302)。曝光裝置104,基於由曝光資料製作裝置102所製作出的曝光資料,將曝光圖案曝光於被配置在基板上的感光性光阻層上(步驟304)。顯影圖案製作裝置106,對已曝光出曝光圖案的感光性光阻層加以顯影,以形成顯影圖案(步驟306),實體圖案製作裝置108,針對形成有顯影圖案的基板進行電路加工,以形成第1實體圖案(步驟308)。上底和下底資料製作裝置110,製作第1上底資料和下底資料(步驟310)。在第2上底資料是利用第1實體圖案的上底來製作出來的情況下,在此處亦製作第2上底資料。又,亦能夠將自第1實體圖案體得到的全體資料作為第2上底資料,並將其中一部分作為第1上底資料。The operational flow of the system in this embodiment is shown in Fig. 3. First, the design material creation device 101 creates design data for the first physical pattern (step 301), and the exposure data creation device 102 creates exposure data based on the design data (step 302). The exposure device 104 exposes the exposure pattern to the photosensitive photoresist layer disposed on the substrate based on the exposure data created by the exposure data creation device 102 (step 304). The developing pattern forming device 106 develops the photosensitive resist layer on which the exposure pattern has been exposed to form a developing pattern (step 306), and the solid pattern forming device 108 performs circuit processing on the substrate on which the developing pattern is formed to form the first 1 physical pattern (step 308). The upper and lower bottom data producing apparatus 110 creates the first upper base data and the lower base data (step 310). In the case where the second upper base material is created using the upper base of the first physical pattern, the second upper base material is also produced here. Further, it is also possible to use the entire data obtained from the first entity pattern as the second base material, and to use a part of the data as the first base material.

接著,判定是否要為了進行曝光資料校正而製作第2實體圖案(步驟312)。例如,在第2上底資料是利用第1實體圖案的上底來得到的情況下,不需要製作第2實體圖案。若有需要製作第2實體圖案,則回到設計資料製作步驟301,進行相同的步驟來形成第2實體圖案,並在步驟310中製作第2實體圖案的上底資料。第2實體圖案的下底資料,不會去加以製作。在不要製作第2實體圖案的上底資料的情況下,或是在製作出第2實體圖案之後,進行曝光資料校正步驟314,並結束曝光資料校正用的動作流程。之後,基於被校正過的曝光資料,例如使用曝光裝置104、顯影圖案製作裝置106、實體圖案製作裝置108來形成配線圖案,而製造出配線基板。Next, it is determined whether or not the second solid pattern is to be created for the exposure data correction (step 312). For example, when the second upper material is obtained by using the upper bottom of the first solid pattern, it is not necessary to create the second physical pattern. If it is necessary to create the second physical pattern, the design returns to the design data creation step 301, the same steps are performed to form the second physical pattern, and in step 310, the upper base data of the second physical pattern is created. The bottom material of the second physical pattern will not be produced. When the top material of the second solid pattern is not to be created, or after the second solid pattern is created, the exposure data correction step 314 is performed, and the operation flow for the exposure data correction is ended. Thereafter, a wiring pattern is formed based on the corrected exposure data, for example, using the exposure device 104, the development pattern creation device 106, and the solid pattern creation device 108, thereby manufacturing a wiring substrate.

第4圖中,更具體地對曝光資料校正步驟314加以說明。首先,曝光資料校正裝置112,取得由上底和下底資料製作裝置100所製作出的第1上底資料,其中該第1上底資料基於自第1實體圖案的至少一部分區域中的上底所得到的資料(步驟401),然後取得下底資料,其中該第1下底資料基於自第1實體圖案的至少一部分區域中的下底所得到的資料(步驟402),並決定第1上底資料與下底資料的相關關係(步驟404)。進一步,曝光資料校正裝置112,取得由上底和下底資料製作裝置100所製作出的第2上底資料,其中該第2上底資料基於自一個區域中的上底所得到的資料,其中上述區域含有與第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中上述第2實體圖案與第1實體圖案不同(步驟406)。然後,基於用來得到第2上底資料之實體圖案用的設計資料、第2上底資料、及步驟404中製作出的相關關係,針對設計資料中所規定的精加工值與實體圖案中的精加工值間的差值來決定校正函數,其中該校正函數表示會造成該差值產生的因素與用來抑制該差值之校正量間的關係(步驟408),然後基於校正函數來校正實體圖案用的曝光資料,其中該實體圖案是用來得到第2上底資料(步驟410)。In Fig. 4, the exposure data correction step 314 is explained more specifically. First, the exposure data correcting means 112 obtains the first upper base data created by the upper and lower bottom data creating apparatus 100, wherein the first upper base data is based on the upper base in at least a part of the area from the first physical pattern. Obtaining the data (step 401), and then obtaining the bottom material, wherein the first bottom material is based on the data obtained from the lower bottom in at least a portion of the first entity pattern (step 402), and determines the first The relationship between the bottom material and the bottom material (step 404). Further, the exposure data correcting means 112 obtains the second upper base data created by the upper and lower base data producing apparatus 100, wherein the second upper base data is based on the data obtained from the upper base in an area, wherein The area includes a region different from at least a portion of the first solid pattern, or the second upper material is based on data obtained from an upper base of the second physical pattern, wherein the second physical pattern is different from the first physical pattern ( Step 406). Then, based on the design data for the physical pattern for obtaining the second upper base data, the second upper base data, and the correlation relationship produced in step 404, the finishing values and the physical patterns specified in the design data are The difference between the finishing values determines a correction function, wherein the correction function represents a relationship between a factor that causes the difference to be generated and a correction amount used to suppress the difference (step 408), and then corrects the entity based on the correction function The exposure data for the pattern, wherein the solid pattern is used to obtain the second upper data (step 410).

自下底得到的下底資料與自上底得到的上底資料間的相關關係,設想會依存於圖案間隙、圖案尺寸、圖案厚度、圖案位置、圖案疏密、圖案形狀等。因此,在決定一次相關關係之後,對於相同的圖案間隙等,可藉由將該相關關係套用至根據AOI資料所得到的其他上底資料,來正確地推測下底資料,而不用手動測量與該其他上底資料對應的新的下底的精加工值。並且,基於被推測出的此下底資料來製作校正函數,可藉此抑制曝光資料校正量的誤差,而提高微細電路形成時的電路寬度精準度。The correlation between the bottom material obtained from the bottom and the upper material obtained from the bottom is conceived depending on the pattern gap, the pattern size, the pattern thickness, the pattern position, the pattern density, the pattern shape, and the like. Therefore, after determining the correlation relationship, the same pattern gap or the like can be correctly estimated by applying the correlation to other upper data obtained from the AOI data without manual measurement and The finishing value of the new lower base corresponding to the other upper data. Further, by creating a correction function based on the estimated bottom data, it is possible to suppress the error of the exposure data correction amount and improve the circuit width accuracy at the time of forming the fine circuit.

校正函數被設想是會根據用來取得資料的基板上的區域而發生變化。另一方面,上底資料與下底資料的相關關係,被設想是比較不會根據用來取得資料的基板上的區域而發生變化。因此,例如針對用來決定相關關係之第1上底資料和下底資料用的測量,可僅在第1實體圖案的受限區域中進行,藉此以較少的勞力消耗來決定相關關係,並且將已被決定的相關關係應用至使用AOI自第1實體圖案全體取得的第2上底資料上,藉此針對第1實體圖案本身亦能夠一邊減輕勞力消耗,一邊得到將基板全體的傾向考慮在裡面之更正確的校正函數。The correction function is assumed to vary depending on the area on the substrate used to acquire the data. On the other hand, the correlation between the upper and lower data is assumed to be relatively invariant depending on the area on the substrate used to obtain the data. Therefore, for example, the measurement for the first upper base data and the lower base data for determining the correlation may be performed only in the restricted area of the first physical pattern, thereby determining the correlation with less labor consumption. In addition, the correlation relationship that has been determined is applied to the second base material acquired from the entire first physical pattern using the AOI, and the tendency of the entire substrate can be considered while reducing the labor consumption for the first physical pattern itself. A more correct correction function inside.

由於相關關係和校正函數有時會根據基板上的區域而發生變化,因此亦可針對配置有配線圖案之相同基板面的每個區域來決定相關關係和校正函數。設計資料與精加工值的關係,即便在相同基板上,有時也會根據區域而成為特殊的關係。例如,由於在基板的中央附近,蝕刻液容易蓄積使得蝕刻速度較慢,因此圖案間隙有變窄的傾向,而在基板的周圍,蝕刻速度較快,因此圖案間隙有變寬的傾向。又,在基板角落中,由於在利用電鍍來形成銅膜時電流會集中於此處,因此銅膜有變厚的傾向,而被設想其上底資料與下底資料間的相關關係會與其他區域不同。因此,藉由遵循本實施型態來針對相同基板面的每個區域決定相關關係和校正函數,可進行精準度更高的電路形成處理。Since the correlation and the correction function sometimes change depending on the area on the substrate, the correlation and the correction function can be determined for each region of the same substrate surface on which the wiring pattern is arranged. The relationship between the design data and the finishing value, even on the same substrate, sometimes becomes a special relationship depending on the region. For example, since the etching liquid tends to accumulate in the vicinity of the center of the substrate, the etching rate tends to be slow, so that the pattern gap tends to be narrow, and the etching speed is high around the substrate, so that the pattern gap tends to be wide. Further, in the corners of the substrate, since the current concentrates there when the copper film is formed by electroplating, the copper film tends to become thick, and it is assumed that the correlation between the upper substrate and the lower substrate is different from that of the substrate. The area is different. Therefore, by following the present embodiment to determine the correlation and the correction function for each region of the same substrate surface, it is possible to perform a circuit formation process with higher accuracy.

又,亦可針對配置有配線圖案之相同基板的上表面和下表面個別決定校正函數。與基板面的區域相同的,相關關係和校正函數有時會因上表面和下表面而有所不同。例如,由於上表面容易蓄積蝕刻液使得蝕刻速度較慢,因此圖案間隙有變窄的傾向,而在下表面中,蝕刻速度較快,因此圖案間隙有變寬的傾向。因此,藉由遵循本實施型態來針對相同基板面的上表面和下表面決定相關關係和校正函數,可進行精準度更高的電路形成處理。Further, the correction function may be individually determined for the upper surface and the lower surface of the same substrate on which the wiring pattern is disposed. Like the area of the substrate surface, the correlation and correction function sometimes differ depending on the upper surface and the lower surface. For example, since the etching liquid is easily accumulated on the upper surface, the etching rate is slow, so that the pattern gap tends to be narrow, and in the lower surface, the etching speed is faster, so the pattern gap tends to become wider. Therefore, by following the present embodiment to determine the correlation and the correction function for the upper surface and the lower surface of the same substrate surface, it is possible to perform a circuit formation process with higher precision.

又,由於配線圖案中的設計資料與精加工值間的關係有時會不同,亦可針對配線圖案中的縱線和橫線的各者來決定校正函數。Further, the relationship between the design data and the finishing value in the wiring pattern may be different, and the correction function may be determined for each of the vertical line and the horizontal line in the wiring pattern.

[第2實施型態] 以下針對本發明的第2實施型態加以說明。本實施型態與第1實施型態的不同之處在於採用步驟500(第5圖)來代替第1實施型態的步驟314(第3、4圖),除此以外與第1實施型態相同。以下的說明中,僅說明與第1實施型態不同的部分,而省略掉相同的部分。[Second embodiment] Hereinafter, a second embodiment of the present invention will be described. The present embodiment is different from the first embodiment in that step 500 (Fig. 5) is used instead of step 314 (Figs. 3 and 4) of the first embodiment, and the first embodiment is used. the same. In the following description, only the portions different from the first embodiment will be described, and the same portions will be omitted.

為了容易理解發明,以下說明這樣的例子:準備在絕緣層上具有5μm之銅箔的厚度0.22mm之MCL-E-700G(商品名,日立化成股份有限公司製)之貼銅積層板來作為基板,然後利用銅電鍍施加約19μm的鍍敷,藉由半蝕刻(用來讓基板全體的銅厚度變薄的整面蝕刻處理)將銅厚度作成約18μm,並曝光上作為第1實體圖案的測試圖案,進行電路形成處理,而製作出相關關係抽出用基板。In order to facilitate the understanding of the invention, a copper-clad laminate having MCL-E-700G (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a thickness of 0.2 μm of a copper foil of 5 μm on the insulating layer is prepared as a substrate. Then, a plating of about 19 μm was applied by copper plating, and the thickness of the copper was made to be about 18 μm by half etching (the entire surface etching treatment for thinning the copper thickness of the entire substrate), and the exposure was tested as the first solid pattern. The pattern is subjected to circuit formation processing to produce a substrate for correlation extraction.

本實施型態中,在步驟310中所製作的第1上底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值,是在第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之第1實體圖案用的設計資料中所規定的精加工值;並且,下底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值,是在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之第1實體圖案用的設計資料中所規定的精加工值。In this embodiment, the first upper base data produced in step 310 includes correction amount data based on the difference between the two finishing values, and the two finishing values are at least in the first solid pattern. a finishing value measured by the upper base in a part of the area, and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; and the bottom material includes two finishing operations The correction amount data of the difference between the values, the two finishing values are the finishing value measured at the lower bottom in at least a part of the first solid pattern, and the first entity corresponding to the finishing value The finishing value specified in the design data for the pattern.

本實施型態中,使用配線圖案的間隙寬度來作為精加工值,但本案所屬技術領域中具有通常知識者當然明白,例如在使用電路寬度等其他精加工值的情況下同樣能夠實施本發明。這點在以下將說明的其他實施型態中也是一樣。In the present embodiment, the gap width of the wiring pattern is used as the finishing value. However, it is of course understood by those skilled in the art that the present invention can be carried out, for example, in the case of using other finishing values such as the circuit width. This is also the same in other embodiments that will be described below.

此處,使用AOI測量第1實體圖案的四角和中央的指定區域中之上底的間隙寬度,並且針對測量到各個間隙寬度之座標,算出上述間隙寬度與該座標在設計資料中所規定的間隙寬度間的差值,來作為校正量資料。同樣的,作為下底資料的校正量,使用顯微鏡測量第1實體圖案的四角和中央的指定區域中之下底的間隙寬度,並且針對測量到各個間隙寬度之座標,算出上述間隙寬度與該座標在設計資料中所規定的間隙寬度間的差值,來作為校正量資料。此處,把要進行上底和下底資料用的測量之區域設為相同區域。藉由對獲得自相同區域之資料間進行比較,便能夠藉此取得更正確的上底資料與下底資料的相關關係。Here, the AOI is used to measure the gap width of the four corners of the first solid pattern and the upper base in the designated area of the center, and for the coordinates of the respective gap widths, the gap width and the gap defined by the coordinates in the design data are calculated. The difference between the widths is used as the correction amount data. Similarly, as the correction amount of the lower base data, the four corners of the first solid pattern and the gap width of the lower base in the designated area in the center are measured using a microscope, and the gap width and the coordinates are calculated for the coordinates of the respective gap widths. The difference between the gap widths specified in the design data is used as the correction amount data. Here, the area to be measured for the upper and lower base data is set to the same area. By comparing the data obtained from the same area, it is possible to obtain a more accurate correlation between the upper and lower materials.

自基於前述條件所得到之相關關係抽出用基板,製作出的第1上底資料和下底資料中的校正量資料如下表所示。 [表1] The calibration amount data in the first upper base data and the lower base data prepared by extracting the substrate from the correlation obtained based on the above conditions are shown in the following table. [Table 1]

表1中的CAD資料表示設計資料中所規定的間隙(gap)寬度(μm)。AOI測量的精加工值,表示根據與設計資料中所規定的間隙寬度對應之AOI測量,來測得之測試圖案的四角和中央區域中的上底之間隙寬度(μm),且校正量是將CAD資料的間隙寬度(μm)與AOI測量的間隙寬度間的差值乘上1/2者。之所以要乘上1/2,是指對間隙的兩端套用的校正量。關於顯微鏡測量也是一樣。顯微鏡測量的精加工值,表示根據顯微鏡測量來測得之測試圖案的四角和中央區域中的下底之間隙寬度(μm),且校正量是將CAD資料的間隙寬度(μm)與顯微鏡測量的間隙寬度間的差值乘上1/2者。例如,CAD資料=20、AOI測量精加工值=44.1、顯微鏡測量精加工值=28.4,所代表的意義是設計上應該要成為20μm之間隙處,根據AOI所測量到的上底中的間隙寬度是44.1μm,而根據顯微鏡所測量到的間隙寬度是28.4μm。並且,若基於AOI測量精加工值,則CAD資料的此間隙應該要在兩端進行12.0μm的校正,且若基於顯微鏡測量,則應該要進行4.2μm的校正。The CAD data in Table 1 indicates the gap width (μm) specified in the design data. The finishing value measured by the AOI indicates the width (μm) of the gap between the four corners of the test pattern and the upper portion of the test pattern measured according to the AOI measurement corresponding to the gap width specified in the design data, and the correction amount is The difference between the gap width (μm) of the CAD data and the gap width measured by the AOI is multiplied by 1/2. The reason for multiplying 1/2 is the amount of correction applied to both ends of the gap. The same is true for microscope measurements. The finishing value measured by the microscope indicates the gap width (μm) of the four corners of the test pattern measured according to the microscopic measurement and the lower base in the central region, and the correction amount is the gap width (μm) of the CAD data and the microscope measurement. The difference between the gap widths is multiplied by 1/2. For example, CAD data = 20, AOI measurement finishing value = 44.1, microscope measurement finishing value = 28.4, the meaning is that the design should be 20μm gap, the gap width in the upper base measured according to AOI It was 44.1 μm, and the gap width measured according to the microscope was 28.4 μm. Also, if the finishing value is measured based on the AOI, the gap of the CAD data should be corrected at 12.0 μm at both ends, and if it is based on a microscope measurement, a correction of 4.2 μm should be performed.

接著,曝光資料校正裝置112,取得由上底資料和下底資料製作裝置110在步驟310中所製作出的第1上底資料和下底資料(步驟501、502),基於第1上底資料中的校正量資料來決定第1暫定校正函數(步驟504),基於下底資料中的校正量資料來決定第2暫定校正函數(步驟506),基於自第1暫定校正函數所得到的校正量與對應於該校正量之自第2暫定校正函數所得到的校正量間的差值(偏移量),來製作校正量差值函數(步驟508)。Next, the exposure data correction device 112 obtains the first upper base data and the lower base data created by the upper base data and the lower base data creation device 110 in step 310 (steps 501, 502), based on the first upper base data. The correction amount data in the middle determines the first tentative correction function (step 504), and determines the second tentative correction function based on the correction amount data in the lower base data (step 506), based on the correction amount obtained from the first tentative correction function. A correction amount difference function is created (step 508) with a difference (offset) between the correction amount obtained from the second tentative correction function corresponding to the correction amount.

本實施型態中之第1暫定校正函數,是用來表示AOI測量間隙寬度用的校正量之函數(AOI測量校正函數(蝕刻曲線)),且上述校正量是指相對於表1和第6圖所示之設計資料中的間隙寬度的校正量;第2暫定校正函數,是用來表示顯微鏡測量間隙寬度用的校正量之函數(顯微鏡測量校正函數),且上述校正量是指相對於設計資料中的間隙寬度的校正量。此處,雖然是將表1和第6圖所示的各設計資料中的間隙寬度與校正量的關係作為各個暫定校正函數,但亦可根據基於測量資料的逼近式來決定暫定校正函數。並且,校正量差值函數,是表示相對於表1和第6圖所示的設計資料中的間隙寬度的、自第1暫定校正函數所得到的校正量與對應於該校正量之自第2暫定校正函數所得到的校正量間的差值(偏移量)的函數。與暫定校正函數同樣的,雖然是將表1和第6圖所示的各設計資料中的間隙與偏移量的關係作為校正量差值函數,但亦可根據基於測量資料的逼近式來決定校正量差值函數。The first tentative correction function in the present embodiment is a function (AOI measurement correction function (etching curve)) for indicating the amount of correction for the AOI measurement gap width, and the above correction amount means relative to Tables 1 and 6. The correction amount of the gap width in the design data shown in the figure; the second tentative correction function is a function (microscopic measurement correction function) for indicating the correction amount for measuring the gap width of the microscope, and the above correction amount means relative to the design The amount of correction for the gap width in the data. Here, although the relationship between the gap width and the correction amount in each design data shown in Tables 1 and 6 is used as each tentative correction function, the tentative correction function may be determined based on the approximation formula based on the measurement data. Further, the correction amount difference function is a correction amount obtained from the first tentative correction function with respect to the gap width in the design data shown in Tables 1 and 6, and the second correction corresponding to the correction amount. A function of the difference (offset) between the correction amounts obtained by the tentative correction function. Similarly to the tentative correction function, although the relationship between the gap and the offset in each design data shown in Tables 1 and 6 is used as the correction amount difference function, it can also be determined based on the approximation based on the measurement data. Correction difference function.

接著,在步驟510中取得第2上底資料。本實施型態中,第2上底資料包含基於二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中上述區域含有與第1實體圖案的至少一部分區域不同的區域,而上述二個精加工值的另一者,是與該前一個精加工值對應之第1實體圖案用的設計資料中所規定的精加工值;或者,第2上底資料包含基於另外二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是根據與第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而上述二個精加工值的另一者,是與該前一個精加工值對應之第2實體圖案用的設計資料中所規定的精加工值。Next, in step 510, the second upper base data is obtained. In this embodiment, the second upper data includes correction amount data based on the difference between the two finishing values, and one of the two finishing values is measured in the upper base in a region. a finishing value, wherein the region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is a design for the first solid pattern corresponding to the previous finishing value The finishing value specified in the data; or, the second upper data includes correction amount data based on the difference between the other two finishing values, one of the two finishing values is based on the first entity The finishing value measured by the upper bottom of the second solid pattern having different patterns, and the other of the two finishing values is the design data for the second solid pattern corresponding to the previous finishing value The specified finishing value.

然後,基於用來取得第2上底資料的實體圖案用的設計資料和第2上底資料,來決定第3暫定校正函數(步驟512),基於校正量差值函數來修正第3暫定校正函數以決定校正函數(步驟514),基於此校正函數來校正曝光資料(步驟516)。Then, based on the design data for the physical pattern for obtaining the second upper base data and the second upper base data, the third tentative correction function is determined (step 512), and the third tentative correction function is corrected based on the correction amount difference function. To determine the correction function (step 514), the exposure data is corrected based on the correction function (step 516).

此處,第2上底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是根據實體圖案整體中的上底所測量到的精加工值,其中上述實體圖案整體包含第1實體圖案的四角和中央,而上述二個精加工值的另一者,是與該前一個精加工值對應之第1實體圖案用的設計資料中所規定的精加工值。因此,用來取得第2上底資料的實體圖案,是第1實體圖案。Here, the second upper base data includes correction amount data based on the difference between the two finishing values, and one of the two finishing values is the fine measured according to the upper bottom in the solid pattern as a whole. a processing value, wherein the solid pattern as a whole includes four corners and a center of the first solid pattern, and the other of the two finishing values is in a design material for the first solid pattern corresponding to the previous finishing value The specified finishing value. Therefore, the physical pattern for obtaining the second upper base material is the first physical pattern.

自基於前述條件所得到之相關關係抽出用基板,製作出的第2上底資料中的校正量資料如下表所示。 [表2] The calibration amount data in the second upper base data prepared by extracting the substrate from the correlation obtained based on the above conditions is as shown in the following table. [Table 2]

表2中的CAD資料表示設計資料中所規定的間隙寬度(μm)。AOI測量的校正值,是將根據AOI測量所得到之測試圖案的上底之間隙寬度(μm)與CAD資料的間隙寬度(μm)間的差值乘上1/2者。偏移量是表1的偏移量(AOI測量用的校正量與顯微鏡測量用的校正量的差值)。本實施型態中,校正量差值函數,是表示偏移量的函數,且該偏移量是相對於表2和第7圖所示之設計資料中的間隙寬度。The CAD data in Table 2 indicates the gap width (μm) specified in the design data. The correction value measured by the AOI is obtained by multiplying the difference between the gap width (μm) of the upper base of the test pattern obtained by the AOI measurement and the gap width (μm) of the CAD data by 1/2. The offset is the offset of Table 1 (the difference between the correction amount for AOI measurement and the correction amount for microscopic measurement). In the present embodiment, the correction amount difference function is a function indicating the offset amount, and the offset amount is the gap width in the design data shown in Tables 2 and 7.

本實施型態中,第3暫定校正函數,是用來表示AOI測量間隙寬度用的校正量之函數(AOI測量校正函數(蝕刻曲線)) ,且上述校正量是指相對於表2和第7圖所示之設計資料中的間隙寬度的校正量。並且,藉由利用校正量差值函數(偏移量)對第3暫定校正函數進行偏移來加以修正。此處,自相對於各設計資料的間隙值之AOI測量用的校正量減去偏移量,藉此得到校正函數。校正函數,是表示相對於設計資料中的間隙寬度之已被修正過的校正量(表2的偏移後的校正量)之函數。此處,雖然是將表2和第7圖所示之偏移後校正量相對於設計資料中的間隙寬度的關係作為校正函數,但亦可根據基於測量資料的逼近式來決定校正函數。In the present embodiment, the third tentative correction function is a function (AOI measurement correction function (etching curve)) for indicating the correction amount for measuring the gap width of the AOI, and the above-mentioned correction amount means relative to Tables 2 and 7. The amount of correction for the gap width in the design data shown in the figure. Then, the third tentative correction function is corrected by using the correction amount difference function (offset amount). Here, the correction amount is obtained by subtracting the offset amount from the correction amount for the AOI measurement with respect to the gap value of each design material. The correction function is a function indicating the corrected correction amount (the correction amount after the offset of Table 2) with respect to the gap width in the design data. Here, although the relationship between the offset correction amount shown in Tables 2 and 7 and the gap width in the design data is used as the correction function, the correction function may be determined based on the approximation formula based on the measurement data.

本實施型態中,第2上底資料,是基於根據實體圖案整體中的上底所測量到的精加工值來得到,其中上述實體圖案整體包含第1實體圖案的四角和中央,但亦可不含有用來得到第1上底資料之第1實體圖案的四角和中央的部分,或者亦可基於根據與第1實體圖案不同的第2實體圖案中的上底所測量到的精加工值。這點在其他實施型態中也是一樣。In this embodiment, the second upper base data is obtained based on the finishing value measured according to the upper bottom in the whole solid pattern, wherein the solid pattern entirely includes the four corners and the center of the first solid pattern, but may not The portion including the four corners and the center of the first solid pattern for obtaining the first upper base material may be based on the finishing value measured based on the upper base in the second solid pattern different from the first solid pattern. This is the same in other implementations.

[實施型態3] 以下針對本發明的第3實施型態加以說明。本實施型態與第1實施型態的不同之處在於採用步驟800(第8圖)來代替第1實施型態的步驟314(第3、4圖),除此以外與第1實施型態相同。以下的說明中,僅說明與第1實施型態不同的部分,而省略掉相同的部分。又,採用根據與第2實施型態中所說明過之條件相同的條件來製作之相關關係抽出用基板作為例子來加以說明。[Embodiment 3] Hereinafter, a third embodiment of the present invention will be described. The present embodiment differs from the first embodiment in that step 800 (Fig. 8) is used instead of step 314 (Figs. 3 and 4) of the first embodiment, and the first embodiment is used. the same. In the following description, only the portions different from the first embodiment will be described, and the same portions will be omitted. In addition, the substrate for correlation extraction prepared based on the same conditions as those described in the second embodiment will be described as an example.

本實施型態中,在步驟310中所製作的第1上底資料,包含在第1實體圖案的上底的至少一部分區域中所測量到的精加工值,下底資料,包含在第1實體圖案的下底的至少一部分區域中所測量到的精加工值。在第1實體圖案的四角和中央的指定區域中,使用AOI測量上底中的間隙寬度來作為上底資料,並使用顯微鏡同樣地測量第1實體圖案的四角和中央的指定區域之下底中的間隙寬度,來作為下底資料。In this embodiment, the first upper base material produced in step 310 includes the finishing value measured in at least a part of the upper base of the first solid pattern, and the lower base data is included in the first entity. The finished value measured in at least a portion of the underlying layer of the pattern. In the four corners of the first solid pattern and the designated area in the center, the gap width in the upper base is measured as the upper base data using the AOI, and the four corners of the first solid pattern and the designated area in the center are measured in the same bottom using the microscope. The gap width is used as the bottom material.

曝光資料校正裝置112,取得由上底資料和下底資料製作裝置110在步驟310中所製作出的第1上底資料和下底資料(步驟801、802);決定第1精加工值函數,該第1精加工值函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及第1上底資料中的精加工值(步驟804);決定第2精加工值函數,該第2精加工值函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及下底資料中的精加工值(步驟804);並決定精加工值差值函數,該精加工值差值函數是基於第1精加工值函數與第2精加工值函數之差值(步驟808)。藉此,決定上底資料與下底資料的相關關係。The exposure data correction device 112 obtains the first upper base data and the lower base data created by the upper base data and the lower base data creation device 110 in step 310 (steps 801 and 802); and determines the first finishing value function. The first finishing value function represents a relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the fineness in the first upper base data. Processing value (step 804); determining a second finishing value function, the second finishing value function indicating a relationship between the following: resulting in a finishing value specified in the design data and a finishing value in the solid pattern a factor of the difference, and a finishing value in the bottom material (step 804); and determining a finishing value difference function, the finishing value difference function is based on the first finishing value function and the second finishing value The difference between the functions (step 808). In this way, the relationship between the upper and lower materials is determined.

自基於前述條件所得到之相關關係抽出用基板,製作出的第1上底資料和下底資料中的精加工值資料如下表所示。 [表3] The data of the finishing values in the first upper base data and the lower base data prepared from the correlation extraction substrate obtained based on the above conditions are shown in the following table. [table 3]

跟表1同樣地,表3中的CAD資料表示設計資料中所規定的間隙寬度(μm)。AOI測量和顯微鏡測量的精加工值,表示根據與設計資料中所規定的間隙寬度對應之測量,所得到之在測試圖案的四角和中央區域中的上底和下底之間隙寬度(μm)。表3中的被測量到的精加工值,使用與表1中所示的相同的數值。差值是將與各CAD資料的間隙寬度對應之AOI測量的間隙寬度與顯微鏡測量的間隙寬度的差值乘上1/2者。例如,CAD資料=20、AOI測量精加工值=44.1、顯微鏡測量精加工值=28.4,所代表的意義是設計上應該要成為20μm之間隙處,根據AOI所測量到的上底中的間隙寬度是44.1μm,而根據顯微鏡所測量到的間隙寬度是28.4μm。並且,AOI測量精加工值與顯微鏡測量精加工值之差值為15.7,將該差值的1/2經過四捨五入處理後值,即得到精加工值差值=7.8μm。As in Table 1, the CAD data in Table 3 indicates the gap width (μm) specified in the design data. The finishing values of the AOI measurement and the microscopic measurement indicate the gap width (μm) of the upper and lower bases in the four corners and the central region of the test pattern, which are measured according to the gap width specified in the design data. The measured finishing values in Table 3 were the same values as shown in Table 1. The difference is obtained by multiplying the difference between the gap width of the AOI measurement corresponding to the gap width of each CAD data by the gap width measured by the microscope by 1/2. For example, CAD data = 20, AOI measurement finishing value = 44.1, microscope measurement finishing value = 28.4, the meaning is that the design should be 20μm gap, the gap width in the upper base measured according to AOI It was 44.1 μm, and the gap width measured according to the microscope was 28.4 μm. Moreover, the difference between the AOI measurement finishing value and the microscope measurement finishing value is 15.7, and the value of 1/2 of the difference is rounded to the value obtained, that is, the difference of the finishing value is 7.8 μm.

本實施型態中,第1精加工值函數,是表示相對於表3和第9圖所示之設計資料中的間隙寬度之AOI測量間隙寬度的精加工值之函數(AOI測量精加工值函數),而第2精加工值函數,是表示相對於設計資料中的間隙寬度之顯微鏡測量間隙寬度的精加工值之函數(顯微鏡測量精加工值函數)。此處,雖然是將表3和第9圖所示的各設計資料中的間隙與精加工值的關係作為各個精加工值函數,但亦可根據基於測量資料的逼近式來決定精加工值函數。並且,精加工值差值函數,是表示相對於表3和第9圖所示之各設計資料中的間隙寬度之AOI測量精加工值與顯微鏡測量精加工值的差值之函數。與精加工值函數同樣的,雖然是將與表3和第9圖所示的各設計資料中的間隙相對之AOI測量精加工值與顯微鏡測量精加工值的差值的關係作為精加工值差值函數,但亦可根據基於測量資料的逼近式來決定精加工值差值函數。In the present embodiment, the first finishing value function is a function of the finishing value of the AOI measurement gap width with respect to the gap width in the design data shown in Tables 3 and 9 (AOI measurement finishing value function) And the second finishing value function is a function of the finishing value of the microscopic measurement gap width with respect to the gap width in the design data (microscopic measurement of the finishing value function). Here, although the relationship between the gap and the finishing value in each design data shown in Tables 3 and 9 is used as a function of each finishing value, the finishing value function may be determined based on the approximation based on the measurement data. . Further, the finishing value difference function is a function representing the difference between the AOI measurement finishing value and the microscope measurement finishing value with respect to the gap width in each of the design materials shown in Tables 3 and 9. The same as the finishing value function, although the relationship between the difference between the AOI measurement finishing value and the microscope measurement finishing value relative to the gap in each design data shown in Tables 3 and 9 is taken as the finishing value difference. The value function, but the difference value of the finishing value can also be determined based on the approximation based on the measured data.

接著,在步驟810中,取得第2上底資料。本實施型態中,第2上底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是在一個區域中的上底來測量到的精加工值,其中上述區域含有與第1實體圖案的至少一部分區域不同的區域,而上述二個精加工值的另一者,是與該前一個精加工值對應之第1實體圖案用的設計資料中所規定的精加工值;或者,第2上底資料包含基於另外二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是根據與第1實體圖案不同的第2實體圖案的上底來測量到的精加工值,而上述二個精加工值的另一者,是與該前一個精加工值對應之第2實體圖案用的設計資料中所規定的精加工值。Next, in step 810, the second supernatant data is acquired. In this embodiment, the second upper base data includes correction amount data based on the difference between the two finishing values, and one of the two finishing values is measured in the upper base in a region. a finishing value, wherein the region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is for the first solid pattern corresponding to the previous finishing value The finishing value specified in the design data; or, the second upper data includes correction amount data based on the difference between the other two finishing values, one of the two finishing values is based on the first The finishing value measured by the upper bottom of the second solid pattern having different physical patterns, and the other of the two finishing values is the design data for the second solid pattern corresponding to the previous finishing value The specified finishing value.

然後,基於用來取得第2上底資料之實體圖案用的設計資料和第2上底資料,決定暫定校正函數(步驟812),並基於精加工值差值函數來修正前述暫定校正函數,而決定校正函數(步驟814)。Then, based on the design data for the physical pattern for obtaining the second upper base data and the second upper base data, the tentative correction function is determined (step 812), and the tentative correction function is corrected based on the finishing value difference function, and The correction function is determined (step 814).

此處,第2上底資料,使用與第2實施型態相同的資料。自基於前述條件所得到之相關關係抽出用基板,製作出的第2上底資料中的校正量資料(AOI測量)如下表所示。這數據與表2所示者相同。 [表4] Here, the second upper data is the same as the second embodiment. The calibration amount data (AOI measurement) in the second upper substrate produced by the correlation extraction substrate obtained based on the above conditions is as shown in the following table. This data is the same as shown in Table 2. [Table 4]

本實施型態中,暫定校正函數,是用來表示AOI測量間隙寬度用的校正量之函數(AOI測量校正函數(蝕刻曲線)) ,且上述校正量是指相對於表4和第10圖所示之設計資料中的間隙寬度的校正量。並且,藉由利用精加工值差值函數對此暫定校正函數進行偏移來加以修正。此處,藉由從與各設計資料的間隙值相對之AOI測量用的校正量減去精加工值差值(偏移量),來得到校正函數。校正函數,是表示相對於設計資料中的間隙寬度之已被修正的校正量之函數。此處,雖然是將表4和第10圖所示之偏移後校正量相對於設計資料中的間隙寬度的關係作為校正函數,但亦可根據基於測量資料的逼近式來決定校正函數。In the present embodiment, the tentative correction function is a function (AOI measurement correction function (etching curve)) for indicating the amount of correction for measuring the gap width of the AOI, and the above-mentioned correction amount means relative to Table 4 and FIG. The amount of correction for the gap width in the design data shown. And, the temporary correction function is offset by using the finishing value difference function to correct. Here, the correction function is obtained by subtracting the finishing value difference (offset amount) from the correction amount for AOI measurement with respect to the gap value of each design material. The correction function is a function of the amount of correction that has been corrected relative to the width of the gap in the design data. Here, although the relationship between the offset correction amount shown in Tables 4 and 10 and the gap width in the design data is used as the correction function, the correction function may be determined based on the approximation formula based on the measurement data.

[實施型態4] 以下針對本發明的第4實施型態加以說明。本實施型態與第1實施型態的不同之處在於採用步驟1100(第11圖)來代替第1實施型態的步驟314(第3、4圖),除此以外與第1實施型態相同。以下的說明中,僅說明與第1實施型態不同的部分,而省略掉相同的部分。又,採用根據與第2實施型態中所說明過的條件相同的條件來製作的相關關係抽出用基板作為例子來加以說明。[Embodiment 4] Hereinafter, a fourth embodiment of the present invention will be described. The present embodiment differs from the first embodiment in that step 1100 (Fig. 11) is used instead of step 314 (Figs. 3 and 4) of the first embodiment, and the first embodiment is used. the same. In the following description, only the portions different from the first embodiment will be described, and the same portions will be omitted. In addition, the substrate for correlation extraction prepared based on the same conditions as those described in the second embodiment will be described as an example.

本實施型態中,在步驟310中所製作的第1上底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值,是在第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之第1實體圖案用的設計資料中所規定的精加工值;並且,下底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值,是在第1實體圖案的至少一部分區域中的根據下底所測量到的精加工值、及與該精加工值對應之第1實體圖案用的設計資料中所規定的精加工值。In this embodiment, the first upper base data produced in step 310 includes correction amount data based on the difference between the two finishing values, and the two finishing values are at least in the first solid pattern. a finishing value measured by the upper base in a part of the area, and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; and the bottom material includes two finishing operations The correction amount data of the difference between the values, the two finishing values are the finishing value measured according to the lower bottom in at least a part of the first solid pattern, and the first corresponding to the finishing value The finishing value specified in the design data for the solid pattern.

第2上底資料,包含基於二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中上述區域含有與第1實體圖案的至少一部分區域不同的區域,而上述二個精加工值的另一者,是與該前一個精加工值對應之第1實體圖案用的設計資料中所規定的精加工值;或者,第2上底資料包含基於另外二個精加工值間的差值之校正量資料,上述二個精加工值的其中一者,是根據與第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而上述二個精加工值的另一者,是與該前一個精加工值對應之第2實體圖案用的設計資料中所規定的精加工值。The second upper base data includes correction amount data based on a difference between the two finishing values, one of the two finishing values being a finishing value measured in the upper base in one region, wherein The region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is defined in the design data for the first solid pattern corresponding to the previous finishing value. The finishing value; or, the second upper data includes correction amount data based on the difference between the other two finishing values, and one of the two finishing values is based on the second difference from the first physical pattern The finishing value measured by the upper bottom of the solid pattern, and the other of the two finishing values is the finishing value specified in the design data for the second solid pattern corresponding to the previous finishing value .

曝光資料校正裝置112,取得由上底資料和下底資料製作裝置110在步驟310中所製作出的第1上底資料和下底資料(步驟1101、1102);並決定以下二個校正量的校正量相關函數:第1上底資料中的校正量資料中所示的校正量、及與該校正量對應之下底資料中的校正量資料中所示的校正量(步驟1104)。藉此,決定上底資料與下底資料的相關關係。The exposure data correction device 112 obtains the first upper base data and the lower base data created by the upper base data and the lower base data creation device 110 in step 310 (steps 1101, 1102); and determines the following two correction amounts. The correction amount correlation function: the correction amount shown in the correction amount data in the first upper base data, and the correction amount shown in the correction amount data in the bottom data corresponding to the correction amount (step 1104). In this way, the relationship between the upper and lower materials is determined.

然後,在取得第2上底資料後(步驟1106),基於用來取得第2上底資料之實體圖案用的設計資料和第2上底資料,決定暫定校正函數(步驟1108),基於校正量相關函數來修正暫定校正函數,而決定校正函數(步驟1110),並基於此校正函數來校正曝光資料(步驟1112)。Then, after acquiring the second background data (step 1106), the tentative correction function is determined based on the design data for the physical pattern for obtaining the second upper base data and the second upper base data (step 1108), based on the correction amount. The correlation function modifies the tentative correction function, determines the correction function (step 1110), and corrects the exposure data based on the correction function (step 1112).

自基於前述條件所得到之相關關係抽出用基板,製作出的第1上底資料和下底資料中的校正量資料,與實施型態2相關連,為如表1所示者。針對表1中的基於顯微鏡測量之校正量與基於AOI測量之校正量的相對關係,將其表示成圖表後的結果為第12圖。例如,若觀察CAD資料=20之列,基於AOI測量之校正為為12.1,與此相對之基於顯微鏡測量之校正量為4.2。在此情況下,將其標記在(x,y)=(12.1,4.2)的座標處。對所有的資料進行這樣的標記之後,藉由逼近式來決定相關關係式。此處藉由線性逼近來決定相關關係式,得到校正量相關函數為y=1.2861x-10.563。The correction amount data in the first upper base data and the lower base data prepared based on the correlation relationship obtained based on the above conditions are related to the embodiment 2, and are as shown in Table 1. For the relative relationship between the amount of correction based on the microscope measurement in Table 1 and the amount of correction based on the AOI measurement, the result after expressing it as a graph is the 12th figure. For example, if the CAD data = 20 is observed, the correction based on the AOI measurement is 12.1, and the correction amount based on the microscope measurement is 4.2. In this case, mark it at the coordinates of (x, y) = (12.1, 4.2). After all such data is marked as such, the correlation is determined by the approximation. Here, the correlation relation is determined by linear approximation, and the correlation function of the correction amount is y=1.2861x-10.563.

自相關關係抽出用基板所製作出來之第2上底資料中的校正量資料如以下所示。將基於AOI測量之校正量作為x,代入前述的校正量相關函數(y=1.2861x-10.563),藉此算出被修正過的校正量y。 [表5] The correction amount data in the second upper base material produced by the autocorrelation extraction substrate is as follows. The correction amount based on the AOI measurement is taken as x, and the aforementioned correction amount correlation function (y=1.2861x-10.563) is substituted, thereby calculating the corrected correction amount y. [table 5]

本實施型態中,暫定校正函數,是用來表示AOI測量間隙寬度用的校正量之函數(AOI測量校正函數(蝕刻曲線)),且上述校正量是指相對於表5和第13圖所示之設計資料中的間隙寬度的校正量。並且,藉由根據校正量相關函數對暫定校正函數進行修正,來得到校正函數。校正函數,是表示相對於設計資料中的間隙寬度之已被修正過之校正量之函數。此處,雖然是將表5和第13圖所示之修正後校正量相對於設計資料中的間隙寬度的關係作為校正函數,但亦可根據基於測量資料的逼近式來決定校正函數。In the present embodiment, the tentative correction function is a function (AOI measurement correction function (etching curve)) for indicating the amount of correction for the AOI measurement gap width, and the above-mentioned correction amount means relative to Tables 5 and 13. The amount of correction for the gap width in the design data shown. And, the correction function is obtained by correcting the tentative correction function according to the correction amount correlation function. The correction function is a function of the amount of correction that has been corrected relative to the width of the gap in the design data. Here, although the relationship between the corrected correction amount shown in Tables 5 and 13 and the gap width in the design data is used as the correction function, the correction function may be determined based on the approximation formula based on the measurement data.

[實施型態5] 以下針對本發明的第5實施型態加以說明。本實施型態與第1實施型態的不同之處在於採用步驟1400(第14圖)來代替第1實施型態的步驟314(第3、4圖),除此以外與第1實施型態相同。以下的說明中,僅說明與第1實施型態不同的部分,而省略掉相同的部分。又,採用根據與第2實施型態中所說明過的條件相同的條件來製作的相關關係抽出用基板作為例子來加以說明。[Embodiment 5] Hereinafter, a fifth embodiment of the present invention will be described. The present embodiment is different from the first embodiment in that step 1400 (Fig. 14) is used instead of step 314 (Figs. 3 and 4) of the first embodiment, and the first embodiment is used. the same. In the following description, only the portions different from the first embodiment will be described, and the same portions will be omitted. In addition, the substrate for correlation extraction prepared based on the same conditions as those described in the second embodiment will be described as an example.

本實施型態中,在步驟310中所製作出的第1上底資料,包含在第1實體圖案的上底的至少一部分區域中所測量到的精加工值,下底資料,包含在第1實體圖案的下底的至少一部分區域中所測量到的精加工值。In the present embodiment, the first upper base material produced in step 310 includes the finishing value measured in at least a portion of the upper base of the first solid pattern, and the lower base data is included in the first The finished value measured in at least a portion of the lower base of the solid pattern.

曝光資料校正裝置112,取得由上底資料和下底資料製作裝置110所製作出的第1上底資料和下底資料(步驟1401、1402);決定在第1上底資料中所測量到的精加工值與在下底資料中所測量到的精加工值的精加工值相關函數(步驟1404)。藉此,決定上底資料與下底資料的相關關係。The exposure data correcting means 112 obtains the first upper base data and the lower base data produced by the upper base data and the lower base data creating apparatus 110 (steps 1401, 1402); and determines the measured in the first upper base data. The finishing value is related to the finishing value of the finishing value measured in the bottom material (step 1404). In this way, the relationship between the upper and lower materials is determined.

在步驟1406中,取得第2上底資料。第2上底資料,包含在一個區域中的上底所測量到的精加工值,其中上述區域含有與第1實體圖案的至少一部分區域不同的區域,或者,第2上底資料,包含根據與第1實體圖案不同的第2實體圖案的上底所測量到的精加工值。In step 1406, the second upper base data is obtained. The second upper base data includes a finishing value measured by an upper base in an area, wherein the area contains a different area from at least a part of the first physical pattern, or the second upper base data includes The finishing value measured by the upper base of the second solid pattern different in the first solid pattern.

基於已被決定的精加工值相關函數,自第2上底資料中的精加工值計算出對應之下底中的精加工值的推算值(步驟1408),並基於以下二個精加工值的差值來決定校正函數:用來得到第2上底資料之實體圖案用的設計資料中所規定的精加工值、及對應於該精加工值之被推算出來的下底中的精加工值(步驟1410)。基於此校正函數,對曝光資料進行校正(步驟1412)。Based on the determined finishing value correlation function, the estimated value of the finishing value in the corresponding bottom is calculated from the finishing value in the second upper data (step 1408), and based on the following two finishing values The difference is used to determine a correction function: a finishing value specified in the design data for obtaining the physical pattern of the second upper data, and a finishing value in the lower base corresponding to the estimated finishing value ( Step 1410). Based on this correction function, the exposure data is corrected (step 1412).

自基於前述條件所得到之相關關係抽出用基板,製作出的第1上底資料和下底資料中的精加工值,與實施型態3相關連,為如表3所示者。針對表3中的基於顯微鏡測量之精加工值與基於AOI測量之精加工值的相對關係,將其表示成圖表後的結果為第15圖。例如,若觀察CAD資料=20之列,基於AOI測量之精加工值為44.1,相對於此的基於顯微鏡測量之精加工值為28.4。在此情況下,將其標記在(x,y)=(44.1,28.4)的座標處。對所有的資料進行這樣的標記之後,藉由逼近式來決定相關關係式。此處藉由線性逼近來決定相關關係式,得到校正量相關函數為y=1.0177x-13.389。The substrate for the extraction of the correlation relationship obtained based on the above conditions, and the finishing values in the first upper base data and the lower base data produced are related to the embodiment 3, as shown in Table 3. For the relative relationship between the microscopic measurement-based finishing value and the AOI-based finishing value in Table 3, the result after expressing it as a graph is shown in Fig. 15. For example, if the CAD data = 20 is observed, the finishing value based on the AOI measurement is 44.1, and the precision based on the microscope measurement is 28.4. In this case, mark it at the coordinates of (x, y) = (44.1, 28.4). After all such data is marked as such, the correlation is determined by the approximation. Here, the correlation relation is determined by linear approximation, and the correction quantity correlation function is obtained as y=1.0177x-13.389.

自相關關係抽出用基板所製作出來之第2上底資料中的精加工值資料如以下所示。將基於AOI測量之精加工值作為x,代入前述的校正量相關函數(y=1.0177x-13.389),藉此算出推算之下底精加工值(間隙寬度)。並且,將該被算出之推算精加工值(間隙寬度)與CAD資料中的設計上的精加工值間的差值乘上1/2後的數值作為校正量。The finishing value data in the second upper base material produced by the self-correlation extraction substrate is as follows. The finishing value based on the AOI measurement is taken as x, and the aforementioned correction amount correlation function (y=1.0177x-13.389) is substituted, thereby calculating the estimated bottom finishing value (gap width). Then, the value obtained by multiplying the calculated difference between the calculated finishing value (gap width) and the design finishing value in the CAD data by 1/2 is used as the correction amount.

[表6] [Table 6]

若將此表中所示之相對於設計資料中的間隙寬度之校正量表示為校正函數(蝕刻曲線),則會如第16圖所示。此處,校正函數,是表示校正量的函數,且該校正量是基於與設計資料中的間隙寬度相對之被推算出來的精加工值。此處,雖然是將表6和第16圖所示之校正量相對於設計資料中的間隙寬度的關係作為校正函數,但亦可根據基於測量資料的逼近式來決定校正函數If the correction amount shown in the table with respect to the gap width in the design data is expressed as a correction function (etching curve), it will be as shown in Fig. 16. Here, the correction function is a function indicating the amount of correction, and the correction amount is a refined value calculated based on the gap width in the design data. Here, although the relationship between the correction amount shown in Tables 6 and 16 and the gap width in the design data is used as the correction function, the correction function may be determined based on the approximation based on the measurement data.

(實施例) 為了確認本實施型態的功效,準備具有5μm之銅箔的厚度0.22mm之MCL-E-700G(商品名,日立化成股份有限公司製)之貼銅積層板,利用銅電鍍施加約19μm的鍍敷,藉由半蝕刻將銅厚度作成約18μm,並根據由上述的實施型態2~5所得到的校正函數來校正曝光資料,進行實體圖案的曝光、顯影、電路形成處理,而製作出電路形成基板。針對使用實施型態2~5之步驟所製作出的校正函數來形成的電路形成基板,分別標記為實施例1~4。(Example) In order to confirm the effect of the present embodiment, a copper-clad laminate having a thickness of 0.22 mm of MCL-E-700G (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil of 5 μm was prepared and applied by copper plating. For a plating of about 19 μm, the thickness of the copper is made to be about 18 μm by half etching, and the exposure data is corrected according to the correction function obtained by the above-described embodiment types 2 to 5, and exposure, development, and circuit formation processing of the solid pattern are performed. A circuit is formed to form a substrate. The circuit-formed substrates formed using the correction functions created in the steps of the second to fifth embodiments are denoted as Examples 1 to 4, respectively.

[比較例1] 作為比較例1,準備具有5μm之銅箔的厚度0.22mm之MCL-E-700G(商品名,日立化成股份有限公司製)之貼銅積層板,利用銅電鍍施加約19μm的鍍敷,藉由半蝕刻將銅厚度作成約18μm,並將測試圖案曝光於其上,進行電路形成處理,而製作出校正函數抽出用基板。然後,以顯微鏡對此校正函數抽出用基板測量電路寬度和間隙寬度,並根據此測量值製作校正函數(蝕刻曲線)。[Comparative Example 1] As a comparative example 1, a copper-clad laminate having a thickness of 0.22 mm of MCL-E-700G (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil of 5 μm was prepared, and about 19 μm was applied by copper plating. In the plating, the copper thickness was set to about 18 μm by half etching, and the test pattern was exposed thereon to perform a circuit formation process, thereby producing a substrate for correction function extraction. Then, the substrate width and the gap width are measured by the microscope for the correction function extraction, and a correction function (etching curve) is created based on the measured value.

準備具有5μm之銅箔的厚度0.22mm之MCL-E-700G(商品名,日立化成股份有限公司製)之貼銅積層板,利用銅電鍍施加約19μm的鍍敷,藉由半蝕刻將銅厚度作成約18μm,並根據上述校正函數(底部寬度)來校正曝光資料,進行實體圖案的曝光、顯影、電路形成處理,而製作出電路形成基板。A copper-clad laminate having a thickness of 0.22 mm of MCL-E-700G (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil of 5 μm was prepared, and plating of about 19 μm was applied by copper plating, and copper thickness was half-etched. The formation of about 18 μm was performed, and the exposure data was corrected in accordance with the above-described correction function (bottom width), and exposure, development, and circuit formation processing of the solid pattern were performed to fabricate a circuit-formed substrate.

[比較例2] 準備具有5μm之銅箔的厚度0.22mm之MCL-E-700G(商品名,日立化成股份有限公司製)之貼銅積層板,利用銅電鍍施加約19μm的鍍敷,藉由半蝕刻將銅厚度作成約18μm,並將測試圖案曝光於其上,進行電路形成處理,而製作出校正函數抽出用基板。然後,以光學式自動外觀檢查裝置對此校正函數抽出用基板測量電路寬度和間隙寬度,並根據此測量值製作校正函數(蝕刻曲線)。[Comparative Example 2] A copper-clad laminate having a thickness of 0.22 mm of MCL-E-700G (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil of 5 μm was prepared, and plating of about 19 μm was applied by copper plating. The thickness of the copper was set to about 18 μm by half etching, and the test pattern was exposed thereon to perform circuit formation processing, thereby producing a substrate for correction function extraction. Then, the correction measuring function extraction circuit width and the gap width are extracted by the optical automatic visual inspection device, and a correction function (etching curve) is created based on the measured value.

準備具有5μm之銅箔的厚度0.22mm之MCL-E-700G(商品名,日立化成股份有限公司製)之貼銅積層板,利用銅電鍍施加約19μm的鍍敷,藉由半蝕刻將銅厚度作成約18μm,並根據上述校正函數(頂部寬度)來校正曝光資料,進行實體圖案的曝光、顯影、電路形成處理,而製作出電路形成基板。A copper-clad laminate having a thickness of 0.22 mm of MCL-E-700G (trade name, manufactured by Hitachi Chemical Co., Ltd.) having a copper foil of 5 μm was prepared, and plating of about 19 μm was applied by copper plating, and copper thickness was half-etched. The substrate was formed to have a length of about 18 μm, and the exposure data was corrected in accordance with the above-described correction function (top width), and exposure, development, and circuit formation processing of the solid pattern were performed to fabricate a circuit-formed substrate.

[比較] 在表7和表8中表示實施例1~4、比較例1和比較例2的測量結果。表7和表8的各項目,表示關於線條部(電路寬度)之設計值和顯微鏡測量值。又,表7的「L/S=50/40」表示L(線條部:電路寬度)為50μm、S(間隔部:間隙寬度)為40μm之設計規格,表8的「L/S=50/50」表示L(線條部:電路寬度)為50μm、S(間隔部:間隙寬度)為50μm之設計規格。實施例1和實施例2,由於差異只在要決定上底資料與下底資料的相關關係時,是基於以上底和精加工值為基礎的校正量之差值,還是基於精加工值本身的差值,因此最終所得到的校正函數會是相同的。因此,根據實施例1和實施例2所得到的結果也會是相同的。    [表7] [Comparative] The measurement results of Examples 1 to 4, Comparative Example 1, and Comparative Example 2 are shown in Tables 7 and 8. The items of Tables 7 and 8 indicate design values and microscope measurements regarding the line portion (circuit width). In addition, "L/S=50/40" in Table 7 indicates a design specification in which L (line portion: circuit width) is 50 μm and S (space portion: gap width) is 40 μm, and "L/S=50/ of Table 8"50" indicates a design specification in which L (line portion: circuit width) is 50 μm and S (space portion: gap width) is 50 μm. In Embodiment 1 and Embodiment 2, since the difference is only when the correlation between the upper base data and the lower base data is to be determined, it is based on the difference between the correction amount based on the upper base and the finishing value, or based on the finishing value itself. The difference, so the resulting correction function will be the same. Therefore, the results obtained according to Example 1 and Example 2 will also be the same. [Table 7]

[表8] [Table 8]

如表7所示,關於L/S=50/40的設計規格,實施例1和實施例2中的電路寬度之尺寸精準度(偏差:3σ)為上表面6.7μm、下表面8.8μm,實施例3中為上表面6.5μm、下表面8.4μm,實施例4中為上表面6.7μm、下表面9.0μm。相對於此,比較例1中為上表面7.1μm、下表面9.7μm,比較例2中為上表面7.6μm、下表面20.5μm。As shown in Table 7, with respect to the design specifications of L/S=50/40, the dimensional accuracy (deviation: 3σ) of the circuit width in Example 1 and Example 2 was 6.7 μm on the upper surface and 8.8 μm on the lower surface. In Example 3, the upper surface was 6.5 μm and the lower surface was 8.4 μm. In Example 4, the upper surface was 6.7 μm and the lower surface was 9.0 μm. On the other hand, in Comparative Example 1, the upper surface was 7.1 μm and the lower surface was 9.7 μm, and in Comparative Example 2, the upper surface was 7.6 μm and the lower surface was 20.5 μm.

如表8所示,關於L/S=50/50的設計規格,實施例1和實施例2中的電路寬度之尺寸精準度(偏差:3σ)為上表面6.0μm、下表面7.7μm,實施例3中為上表面5.8μm、下表面7.4μm,實施例4中為上表面6.0μm、下表面8.3μm。相對於此,比較例1中為上表面6.4μm、下表面9.2μm,比較例2中為上表面6.0μm、下表面8.8μm。As shown in Table 8, regarding the design specifications of L/S=50/50, the dimensional accuracy (deviation: 3σ) of the circuit width in Example 1 and Example 2 was 6.0 μm on the upper surface and 7.7 μm on the lower surface. In Example 3, the upper surface was 5.8 μm and the lower surface was 7.4 μm. In Example 4, the upper surface was 6.0 μm and the lower surface was 8.3 μm. On the other hand, in Comparative Example 1, the upper surface was 6.4 μm and the lower surface was 9.2 μm, and in Comparative Example 2, the upper surface was 6.0 μm and the lower surface was 8.8 μm.

由此結果可知,關於上表面和下表面中的偏差,本發明的實施例1~4均表示出優於比較例之特性,因此藉由使用本發明可提高電路寬度精準度。From this result, it is understood that the first to fourth embodiments of the present invention show characteristics superior to those of the comparative example with respect to the deviation in the upper surface and the lower surface, and therefore the circuit width accuracy can be improved by using the present invention.

以上所說明過的各實施型態,只是用來說明本發明的例示內容,本發明並不限定於這些實施型態。本發明,只要不脫離其要旨,便能夠以各種型態來加以實施。The embodiments described above are merely illustrative of the present invention, and the present invention is not limited to these embodiments. The present invention can be implemented in various forms without departing from the gist thereof.

100‧‧‧配線圖案形成系統
101‧‧‧設計資料製作裝置
102‧‧‧曝光資料製作裝置
104‧‧‧曝光裝置
106‧‧‧顯影圖案製作裝置
108‧‧‧實體圖案製作裝置
110‧‧‧上底和下底資料製作裝置
112‧‧‧曝光資料校正裝置
200‧‧‧電腦
201‧‧‧處理部
202‧‧‧顯示部
203‧‧‧輸入部
204‧‧‧記憶部
205‧‧‧通訊部
206‧‧‧曝光資料校正程式
301~314‧‧‧步驟
401~410‧‧‧步驟
500~516‧‧‧步驟
800~816‧‧‧步驟
1100~1112‧‧‧步驟
1400~1412‧‧‧步驟
1700‧‧‧基板
1701‧‧‧配線圖案
1702‧‧‧上底(頂部)寬度
1704‧‧‧下底(底部)寬度
100‧‧‧Wiring pattern forming system
101‧‧‧Design data production device
102‧‧‧Exposure data production device
104‧‧‧Exposure device
106‧‧‧Development pattern making device
108‧‧‧Solid pattern making device
110‧‧‧Upper and lower base data production devices
112‧‧‧Exposure data correction device
200‧‧‧ computer
201‧‧‧Processing Department
202‧‧‧Display Department
203‧‧‧ Input Department
204‧‧‧Memory Department
205‧‧‧Communication Department
206‧‧‧Exposure data correction program
301~314‧‧‧Steps
401~410‧‧‧Steps
500~516‧‧‧Steps
800~816‧‧‧Steps
1100~1112‧‧‧Steps
1400~1412‧‧ steps
1700‧‧‧Substrate
1701‧‧‧Wiring pattern
1702‧‧‧Upper (top) width
1704‧‧‧ bottom (bottom) width

第1圖表示本發明的實施型態的配線圖案形成系統的概略圖。 第2圖表示本發明的實施型態中的曝光資料校正裝置的硬體構成圖。 第3圖表示本發明的一實施型態的曝光資料校正方法的流程圖。 第4圖表示本發明的一實施型態的曝光資料校正步驟的流程圖。 第5圖表示本發明的一實施型態的曝光資料校正步驟的流程圖。 第6圖表示本發明的一實施型態的暫定校正函數。 第7圖表示本發明的一實施型態的暫定校正函數和校正函數。 第8圖表示本發明的一實施型態的曝光資料校正步驟的流程圖。 第9圖表示本發明的一實施型態的精加工值函數。 第10圖表示本發明的一實施型態的暫定校正函數和校正函數。 第11圖表示本發明的一實施型態的曝光資料校正步驟的流程圖。 第12圖表示本發明的一實施型態的校正量相關函數。 第13圖表示本發明的一實施型態的暫定校正函數和校正函數。 第14圖表示本發明的一實施型態的曝光資料校正步驟的流程圖。 第15圖表示本發明的一實施型態的精加工值相關函數。 第16圖表示本發明的一實施型態的校正函數。 第17圖表示實體圖案的剖面形狀之概略圖。Fig. 1 is a schematic view showing a wiring pattern forming system of an embodiment of the present invention. Fig. 2 is a view showing the hardware configuration of the exposure data correction device in the embodiment of the present invention. Fig. 3 is a flow chart showing a method of correcting exposure data according to an embodiment of the present invention. Fig. 4 is a flow chart showing the procedure of the exposure data correction according to an embodiment of the present invention. Fig. 5 is a flow chart showing the procedure of the exposure data correction of an embodiment of the present invention. Fig. 6 is a view showing a tentative correction function of an embodiment of the present invention. Fig. 7 shows a tentative correction function and a correction function of an embodiment of the present invention. Fig. 8 is a flow chart showing the procedure of the exposure data correction of an embodiment of the present invention. Fig. 9 is a view showing a finishing value function of an embodiment of the present invention. Fig. 10 shows a tentative correction function and a correction function of an embodiment of the present invention. Fig. 11 is a flow chart showing the procedure of the exposure data correction of an embodiment of the present invention. Fig. 12 is a view showing a correction amount correlation function of an embodiment of the present invention. Fig. 13 is a view showing a tentative correction function and a correction function of an embodiment of the present invention. Fig. 14 is a flow chart showing the procedure of the exposure data correction of an embodiment of the present invention. Fig. 15 is a view showing a finishing value correlation function of an embodiment of the present invention. Fig. 16 shows a correction function of an embodiment of the present invention. Fig. 17 is a schematic view showing a sectional shape of a solid pattern.

國內寄存資訊 (請依寄存機構、日期、號碼順序註記) 無Domestic deposit information (please note according to the order of the depository, date, number)

國外寄存資訊 (請依寄存國家、機構、日期、號碼順序註記) 無Foreign deposit information (please note in the order of country, organization, date, number)

(請換頁單獨記載) 無(Please change the page separately) No

100‧‧‧配線圖案形成系統 100‧‧‧Wiring pattern forming system

101‧‧‧設計資料製作裝置 101‧‧‧Design data production device

102‧‧‧曝光資料製作裝置 102‧‧‧Exposure data production device

104‧‧‧曝光裝置 104‧‧‧Exposure device

106‧‧‧顯影圖案製作裝置 106‧‧‧Development pattern making device

108‧‧‧實體圖案製作裝置 108‧‧‧Solid pattern making device

110‧‧‧上底和下底資料製作裝置 110‧‧‧Upper and lower base data production devices

112‧‧‧曝光資料校正裝置 112‧‧‧Exposure data correction device

Claims (22)

一種曝光資料校正裝置,其對用來製作配線圖案的曝光資料進行校正,且前述曝光資料校正裝置執行以下動作: 取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;以及,基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正。An exposure data correction device that corrects exposure data for making a wiring pattern, and the exposure data correction device performs the following actions: obtaining a first upper base data based on having an upper bottom and a lower bottom The material obtained by the upper bottom in at least a part of the convex first solid pattern, the first solid pattern is obtained by circuit processing, and the circuit processing uses design data based on the target wiring pattern. Exposure data; obtaining the bottom material, the data obtained from the bottom bottom in at least a part of the pattern of the first entity pattern; determining the correlation between the first base material and the bottom material; 2 upper base data, the second upper base data is based on data obtained from an upper base in an area, wherein the aforementioned one area contains an area different from at least a part of the area of the first physical pattern, or the second upper base data Based on the data obtained from the upper bottom of the second physical pattern, wherein the second physical pattern is different from the first physical pattern; The design data for the physical pattern of the second upper base data, the second upper base data, and the correlation relationship are used to determine a correction function, the correction function indicating a relationship between the following: causing finishing processing specified in the design data a factor generated by a difference between the value and the finishing value in the solid pattern, and a correction amount for suppressing the difference; and, based on the aforementioned correction function, for the physical pattern used to obtain the second upper base data The exposure data is corrected. 如請求項1所述之資料校正裝置,其中,前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值; 前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述另外二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述另外二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的動作,包含以下動作:基於前述第1上底資料中的校正量資料,決定第1暫定校正函數;基於前述下底資料中的校正量資料,決定第2暫定校正函數;以及,基於自前述第1暫定校正函數所得到之校正量與對應於該校正量之自第2暫定校正函數所得到之校正量的差值,製作校正量差值函數;並且,決定前述校正函數的動作,包含以下動作:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定第3暫定校正函數;以及,基於前述校正量差值函數,對前述第3暫定校正函數進行修正,以決定校正函數。The data correction device according to claim 1, wherein the first upper base data includes correction amount data based on a difference between the two finishing values: at least a part of the area of the first physical pattern a finishing value measured at the bottom and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the bottom material includes a difference between the following two finishing values The correction amount data of the value: the finishing value measured in the lower bottom in at least a part of the first solid pattern, and the finishing specified in the design data for the first solid pattern corresponding to the finishing value The second base data includes the correction amount data based on the difference between the two finishing values, and one of the two finishing values is the finishing measured by the upper bottom in one region. a value, wherein the one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is the first entity map corresponding to the previous finishing value The finishing value specified in the design data of the case; or, the second upper base data includes correction amount data based on the difference between the other two finishing values, one of the other two finishing values, Is a finishing value measured on the upper bottom of the second solid pattern different from the first solid pattern, and the other of the other two finishing values is the aforementioned one corresponding to the previous finishing value (2) The finishing value specified in the design data for the solid pattern; the operation for determining the correlation relationship includes the following operation: determining the first tentative correction function based on the correction amount data in the first upper base data; The correction amount data in the data determines the second tentative correction function; and the difference between the correction amount obtained from the first tentative correction function and the correction amount obtained from the second tentative correction function corresponding to the correction amount Determining a correction amount difference function; and determining the operation of the correction function includes the following operations: design data based on the physical pattern used to acquire the second upper base data, and the foregoing The second upper base data determines a third tentative correction function; and the third tentative correction function is corrected based on the correction amount difference function to determine a correction function. 如請求項1所述之資料校正裝置,其中,前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值; 前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的動作,包含以下動作:決定第1精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述第1上底資料中的精加工值;決定第2精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述下底資料中的精加工值;以及,決定精加工值差值函數,其基於前述第1精加工值函數與第2精加工值函數的差值;並且,決定前述校正函數的動作,包含以下動作:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述精加工值差值函數,對前述暫定校正函數進行修正,以決定校正函數。The data correction device according to claim 1, wherein the first supernatant material includes a finishing value measured in at least a portion of an upper base of the first solid pattern; and the bottom material is included in a finishing value measured in at least a portion of the lower base of the first solid pattern; the second upper base data includes correction amount data based on a difference between the two finishing values, the two finishing values One of the values is a finishing value measured in the upper base of a region, wherein the aforementioned one region contains a region different from at least a portion of the aforementioned first solid pattern, and the other two of the two finishing values The finishing value specified in the design data for the first solid pattern corresponding to the previous finishing value; or the second upper data includes a difference between the other two finishing values. The correction amount data, wherein one of the two finishing values is a finishing value measured on a top of the second solid pattern different from the first solid pattern, and the two finishing values are One is a finishing value defined in the design data for the second solid pattern corresponding to the previous finishing value; and the operation for determining the correlation relationship includes the following operation: determining a first finishing value function, Indicates the relationship between the difference between the finishing value specified in the design data and the finishing value in the physical pattern, and the finishing value in the first upper base data; A finishing value function, which represents a relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the finishing value in the aforementioned bottom data. And determining a finishing value difference function based on a difference between the first finishing value function and the second finishing value function; and determining an operation of the correction function, comprising the following operation: 2 design data for the physical pattern of the upper base data and the second upper base data, determining a tentative correction function; and, based on the aforementioned difference value function of the finishing value, the tentative correction function Line correction to determine correction function. 如請求項1所述之資料校正裝置,其中,前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值; 前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的動作,包含以下動作:決定以下二個校正量的校正量相關函數:前述第1上底資料中的校正量資料中所示的校正量、及與該校正量對應之前述下底資料中的校正量資料中所示的校正量;並且,決定前述校正函數的動作,包含以下動作:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述校正量相關函數,對前述暫定校正函數進行修正,以決定校正函數。The data correction device according to claim 1, wherein the first upper base data includes correction amount data based on a difference between the two finishing values: at least a part of the area of the first physical pattern a finishing value measured at the bottom and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the bottom material includes a difference between the following two finishing values The correction amount data of the value: the finishing value measured in the lower bottom in at least a part of the first solid pattern, and the finishing specified in the design data for the first solid pattern corresponding to the finishing value The second base data includes the correction amount data based on the difference between the two finishing values, and one of the two finishing values is the finishing measured by the upper bottom in one region. a value, wherein the one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is the first entity map corresponding to the previous finishing value The finishing value specified in the design data of the case; or the second upper base data includes correction amount data based on the difference between the other two finishing values, one of the two finishing values is a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern, and the other of the two finishing values is the second entity corresponding to the previous finishing value The finishing value specified in the design data for the pattern; the operation for determining the correlation relationship includes the following actions: determining the correction amount correlation function of the following two correction amounts: as shown in the correction amount data in the first upper base data The correction amount and the correction amount shown in the correction amount data in the lower base data corresponding to the correction amount; and determining the operation of the correction function includes the following operation: based on obtaining the second upper base data The design data for the physical pattern and the second upper base data determine a tentative correction function; and, based on the correction amount correlation function, correct the tentative correction function to determine the calibration Positive function. 如請求項1所述之資料校正裝置,其中,前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值; 前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者,前述第2上底資料,包含在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值;決定前述相關關係的動作,包含以下動作:決定以下二個精加工值的精加工值相關函數:在前述第1上底資料中所測量到的精加工值、及在前述下底資料中所測量到的精加工值;並且,決定前述校正函數的動作,包含以下動作:基於已被決定的精加工值相關函數,並基於前述第2上底資料中的精加工值來計算出與該精加工值對應之下底中的精加工值的推算值;以及,基於以下二個精加工值的差值來決定校正函數:用來得到前述第2上底資料之實體圖案用的設計資料中所規定的精加工值、及對應於該精加工值之前述被推算出來的下底中的精加工值。The data correction device according to claim 1, wherein the first supernatant material includes a finishing value measured in at least a portion of an upper base of the first solid pattern; and the bottom material is included in a finishing value measured in at least a portion of the lower base of the first solid pattern; the second upper base data comprising a finishing value measured by an upper base in a region, wherein the aforementioned one region contains a region in which at least a part of the first solid pattern is different, or the second upper material includes a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern; The action of the relationship includes the following actions: determining the finishing value correlation function of the following two finishing values: the finishing value measured in the first upper base data, and the fineness measured in the aforementioned lower base data Processing value; and determining the action of the aforementioned correction function, comprising the following actions: based on the determined finishing value correlation function, and based on the fine addition in the aforementioned second background data a value to calculate an estimated value of the finishing value in the bottom corresponding to the finishing value; and determining a correction function based on a difference between the following two finishing values: an entity used to obtain the second upper base data The finishing value specified in the design data for the pattern, and the finishing value in the lower base corresponding to the above-described calculated finishing value. 如請求項1至5中任一項所述之資料校正裝置,其中,前述第1上底資料和前述第2上底資料中所含的精加工值,是基於利用光學式外觀檢查裝置而得到的資料之精加工值;前述下底資料,是基於利用顯微鏡而得到的資料之下底資料。The data correction device according to any one of claims 1 to 5, wherein the finishing value included in the first upper base data and the second upper base data is obtained based on an optical visual inspection device. The finishing value of the data; the aforementioned bottom data is based on the data obtained by using the microscope. 如請求項1至6中任一項所述之資料校正裝置,其中,前述校正函數,以配置有配線圖案之相同基板面的各個區域為單位來分別決定。The data correction device according to any one of claims 1 to 6, wherein the correction function is determined in units of respective regions of the same substrate surface on which the wiring patterns are arranged. 如請求項1至7中任一項所述之資料校正裝置,其中,前述校正函數,以配置有配線圖案之相同基板的上表面和下表面為單位來分別決定。The data correction device according to any one of claims 1 to 7, wherein the correction function is determined in units of an upper surface and a lower surface of the same substrate on which the wiring pattern is arranged. 如請求項1至8中任一項所述之資料校正裝置,其中,前述校正函數,針對配線圖案中的縱線和橫線的各者來分別決定。The data correction device according to any one of claims 1 to 8, wherein the correction function is determined for each of a vertical line and a horizontal line in the wiring pattern. 一種配線圖案形成系統,其具備: 曝光資料製作手段,其製作曝光資料,該曝光資料基於作為目標的配線圖案之設計資料;圖案曝光手段,其基於曝光資料,在被配置在基板上之感光性光阻層上曝光出曝光圖案;顯影圖案形成手段,其對曝光出前述曝光圖案之感光性光阻層進行顯影,以形成顯影圖案;實體圖案形成手段,其針對形成有前述顯影圖案之基板進行電路加工處理,以形成實體圖案;上底資料製作手段,其製作上底資料,該上底資料基於自前述實體圖案的至少一部分區域中的上底而得到的資料;下底資料製作手段,其製作下底資料,該下底資料基於自前述實體圖案的至少一部分區域中的下底而得到的資料;以及,如請求項1至9中任一項所述之曝光資料校正裝置,其基於前述上底資料、下底資料和設計資料來校正曝光資料。A wiring pattern forming system comprising: an exposure data producing means for producing exposure data, the exposure data is based on design data of a target wiring pattern; and a pattern exposure means for sensing sensitivity on a substrate based on exposure data Exposing an exposure pattern on the photoresist layer; developing a pattern forming means for developing the photosensitive photoresist layer exposing the exposure pattern to form a development pattern; and a solid pattern forming means for the substrate on which the development pattern is formed Circuit processing to form a solid pattern; upper substrate data producing means for fabricating upper base data based on data obtained from an upper base in at least a portion of the aforementioned solid pattern; lower bottom data producing means, Forming the underlying material based on the data obtained from the lower bottom in at least a portion of the foregoing physical pattern; and the exposure data correcting device according to any one of claims 1 to 9, which is based on the foregoing The upper base data, the lower base data and the design data are used to correct the exposure data. 一種程式,是用來校正曝光資料的程式,且該曝光資料是用來製作配線圖案,該程式使電腦執行以下步驟: 取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;以及,基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正。A program for correcting exposure data, and the exposure data is used to create a wiring pattern, the program causes the computer to perform the following steps: Obtaining the first upper base data, the first upper base data is based on having an upper bottom and The material obtained by the upper bottom in at least a part of the convex first solid pattern, the first solid pattern is obtained by circuit processing, and the circuit is processed using a design based on the target wiring pattern. Exposure data of the data; obtaining the bottom material, the data obtained from the bottom bottom in at least a part of the pattern of the first entity; determining the correlation between the first base material and the bottom material; Obtaining a second upper base data based on data obtained from an upper base in an area, wherein the one area includes an area different from at least a part of the first physical pattern, or the second upper The bottom material is based on data obtained from the upper bottom of the second physical pattern, wherein the second physical pattern is different from the first physical pattern; The design data for the physical pattern of the second upper base data, the second upper base data, and the aforementioned correlation relationship are used to determine a correction function indicating a relationship between the following: resulting in a finishing value specified in the design data a factor generated by a difference from a finishing value in the solid pattern, and a correction amount for suppressing the difference; and an exposure for obtaining a physical pattern of the second upper base data based on the correction function The data is corrected. 一種方法,是用來校正曝光資料的方法,且該曝光資料是用來製作配線圖案,該方法包含以下步驟: 取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;以及,基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正。A method for correcting exposure data, and the exposure data is used to make a wiring pattern, the method comprising the steps of: obtaining a first upper base data, the first upper base data being based on having an upper bottom and a lower bottom The material obtained by the upper bottom in at least a part of the convex first solid pattern, the first solid pattern is obtained by circuit processing, and the circuit processing uses design data based on the target wiring pattern. Exposure data; obtaining the bottom material, the data obtained from the bottom bottom in at least a part of the pattern of the first entity pattern; determining the correlation between the first base material and the bottom material; 2 upper base data, the second upper base data is based on data obtained from an upper base in an area, wherein the aforementioned one area contains an area different from at least a part of the area of the first physical pattern, or the second upper base data Based on the data obtained from the upper bottom of the second physical pattern, wherein the second physical pattern is different from the first physical pattern; based on the second upper The design data for the physical pattern of the data, the second upper base data, and the aforementioned correlation relationship are used to determine a correction function indicating a relationship between the following: resulting in a finishing value and a physical pattern specified in the design data. The difference between the finishing values and the amount of correction for suppressing the difference; and correcting the exposure data for obtaining the physical pattern of the second upper data based on the correction function. 一種配線基板製造方法,其包含以下步驟: 取得第1上底資料,該第1上底資料基於自具有上底和下底之凸狀的第1實體圖案的至少一部分區域中的上底所得到的資料,前述第1實體圖案是藉由電路加工而得到,且該電路加工使用基於作為目標的配線圖案用的設計資料之曝光資料;取得下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料的相關關係;取得第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正;以及,基於前述曝光資料,形成配線圖案。A method of manufacturing a wiring board, comprising the steps of: obtaining a first upper substrate data obtained based on an upper bottom in at least a portion of a first solid pattern having a convex shape of an upper bottom and a lower bottom; According to the data, the first physical pattern is obtained by circuit processing, and the circuit processing uses exposure data based on design data for the target wiring pattern; and the bottom data is obtained based on the first entity a data obtained from a lower bottom in at least a portion of the pattern; determining a correlation between the first upper base data and the lower base data; obtaining a second upper base data based on an upper portion of the area a data obtained by the bottom, wherein the one region includes a region different from at least a portion of the first entity pattern, or the second matrix material is based on data obtained from an upper base of the second entity pattern, wherein the second portion The physical pattern is different from the first physical pattern; the design data for obtaining the physical pattern of the second upper base material, the second upper base data, and the foregoing Correlation, to determine a correction function, the correction function indicating a relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the suppression of the a correction amount of the difference; correcting exposure data for obtaining the physical pattern of the second upper base data based on the correction function; and forming a wiring pattern based on the exposure data. 如請求項13所述之配線基板製造方法,其中,前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值; 前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的步驟,包含以下步驟:基於前述第1上底資料中的校正量資料,決定第1暫定校正函數;基於前述下底資料中的校正量資料,決定第2暫定校正函數;以及,基於自前述第1暫定校正函數所得到之校正量與對應於該校正量之自第2暫定校正函數所得到之校正量的差值,製作校正量差值函數;並且,決定前述校正函數的步驟,包含以下步驟:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定第3暫定校正函數;以及,基於前述校正量差值函數,對前述第3暫定校正函數進行修正,以決定校正函數。The method of manufacturing a wiring board according to claim 13, wherein the first background data includes correction amount data based on a difference between the two finishing values: at least a part of the region of the first solid pattern a finishing value measured by the upper base and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the bottom material is included based on the following two finishing values The correction amount data of the difference: the finishing value measured in the lower bottom in at least a part of the region of the first solid pattern, and the fineness specified in the design data for the first solid pattern corresponding to the finishing value The processing value; the second upper base data includes correction amount data based on the difference between the two finishing values, and one of the two finishing values is the fine measured in the upper base in one region. a processing value, wherein the one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is the first one corresponding to the previous finishing value The finishing value specified in the design data for the body pattern; or the second background data includes correction amount data based on the difference between the other two finishing values, one of the two finishing values, a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern, and the other of the two finishing values is the second corresponding to the previous finishing value The finishing value specified in the design data for the solid pattern; the step of determining the correlation relationship includes the following steps: determining the first tentative correction function based on the correction amount data in the first upper base data; The correction amount data in the determination determines a second tentative correction function; and, based on the difference between the correction amount obtained from the first provisional correction function and the correction amount obtained from the second tentative correction function corresponding to the correction amount, Making a correction amount difference function; and determining the foregoing correction function includes the following steps: design data based on the physical pattern used to obtain the second upper base data, and the second End of data, the third tentative decision correction function; and, based on the difference function and the correction amount, the correction of the third provisional correction function to determine the correction function. 如請求項13所述之配線基板製造方法,其中,前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值; 前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的步驟,包含以下步驟:決定第1精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述第1上底資料中的精加工值;決定第2精加工值函數,其表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及前述下底資料中的精加工值;以及,決定精加工值差值函數,其基於前述第1精加工值函數與第2精加工值函數的差值;並且,決定前述校正函數的步驟,包含以下步驟:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述精加工值差值函數,對前述暫定校正函數進行修正,以決定校正函數。The method of manufacturing a wiring board according to claim 13, wherein the first supernatant material includes a finishing value measured in at least a portion of an upper base of the first solid pattern; and the bottom material includes a finishing value measured in at least a portion of the lower base of the first solid pattern; the second upper base data includes correction amount data based on a difference between the two finishing values, the two finishing operations One of the values is a finishing value measured in the upper base of a region, wherein the aforementioned one region contains a region different from at least a portion of the aforementioned first solid pattern, and the other two finishing values are One is a finishing value specified in the design data for the first solid pattern corresponding to the previous finishing value; or the second upper data includes a difference based on the other two finishing values The correction amount data, wherein one of the two finishing values is a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern, and the two finishing operations are performed The other one is a finishing value defined in the design data for the second solid pattern corresponding to the previous finishing value; and the step of determining the correlation relationship includes the following steps: determining the first finishing value function , which indicates the relationship between the difference between the finishing value specified in the design data and the finishing value in the physical pattern, and the finishing value in the first upper base data; The second finishing value function, which represents the relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the fineness in the aforementioned bottom data a machining value; and determining a finishing value difference function based on a difference between the first finishing value function and the second finishing value function; and determining the correction function comprises the following steps: The design data for the physical pattern of the second upper base data and the second upper base data determine a tentative correction function; and, based on the difference value function of the finishing value, the tentative correction The function is modified to determine the correction function. 如請求項13所述之配線基板製造方法,其中,前述第1上底資料,包含基於以下二個精加工值間的差值之校正量資料:在前述第1實體圖案的至少一部分區域中的上底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值; 前述下底資料,包含基於以下二個精加工值間的差值之校正量資料:在第1實體圖案的至少一部分區域中的下底所測量到的精加工值、及與該精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;前述第2上底資料,包含基於二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第1實體圖案用的設計資料中所規定的精加工值;或者,前述第2上底資料包含基於另外二個精加工值間的差值之校正量資料,前述二個精加工值的其中一者,是在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值,而前述二個精加工值的另一者,是與該前一個精加工值對應之前述第2實體圖案用的設計資料中所規定的精加工值;決定前述相關關係的步驟,包含以下步驟:決定以下二個校正量的校正量相關函數:前述第1上底資料中的校正量資料中所示的校正量、及與該校正量對應之前述下底資料中的校正量資料中所示的校正量;並且,決定前述校正函數的步驟,包含以下步驟:基於用來取得前述第2上底資料之實體圖案用的設計資料和前述第2上底資料,決定暫定校正函數;以及,基於前述校正量相關函數,對前述暫定校正函數進行修正,以決定校正函數。The method of manufacturing a wiring board according to claim 13, wherein the first background data includes correction amount data based on a difference between the two finishing values: at least a part of the region of the first solid pattern a finishing value measured by the upper base and a finishing value specified in the design data for the first solid pattern corresponding to the finishing value; the bottom material is included based on the following two finishing values The correction amount data of the difference: the finishing value measured in the lower bottom in at least a part of the region of the first solid pattern, and the fineness specified in the design data for the first solid pattern corresponding to the finishing value The processing value; the second upper base data includes correction amount data based on the difference between the two finishing values, and one of the two finishing values is the fine measured in the upper base in one region. a processing value, wherein the one region includes a region different from at least a portion of the first solid pattern, and the other of the two finishing values is the first one corresponding to the previous finishing value The finishing value specified in the design data for the body pattern; or the second background data includes correction amount data based on the difference between the other two finishing values, one of the two finishing values, a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern, and the other of the two finishing values is the second corresponding to the previous finishing value The finishing value specified in the design data for the solid pattern; the step of determining the correlation relationship includes the following steps: determining the correction amount correlation function of the following two correction amounts: the correction amount data in the first upper base data a correction amount shown, and a correction amount shown in the correction amount data in the lower base data corresponding to the correction amount; and the step of determining the correction function includes the following steps: based on obtaining the second upper base Determining a tentative correction function by design data for the physical pattern of the data and the second upper base data; and correcting the tentative correction function based on the correction amount correlation function Reference Correction function. 如請求項13所述之配線基板製造方法,其中,前述第1上底資料,包含在前述第1實體圖案的上底的至少一部分區域中所測量到的精加工值; 前述下底資料,包含在前述第1實體圖案的下底的至少一部分區域中所測量到的精加工值; 前述第2上底資料,包含在一個區域中的上底所測量到的精加工值,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者,前述第2上底資料,包含在與前述第1實體圖案不同的第2實體圖案的上底所測量到的精加工值; 決定前述相關關係的步驟,包含以下步驟: 決定以下二個精加工值的精加工值相關函數:在前述第1上底資料中所測量到的精加工值、及在前述下底資料中所測量到的精加工值; 並且,決定前述校正函數的步驟,包含以下步驟: 基於已被決定的精加工值相關函數,並基於前述第2上底資料中的精加工值來計算出與該精加工值對應之下底中的精加工值的推算值;以及,基於以下二個精加工值的差值來決定校正函數:用來得到前述第2上底資料之實體圖案用的設計資料中所規定的精加工值、及對應於該精加工值之前述被推算出來的下底中的精加工值。The method of manufacturing a wiring board according to claim 13, wherein the first supernatant material includes a finishing value measured in at least a portion of an upper base of the first solid pattern; and the bottom material includes a finishing value measured in at least a portion of a lower base of the first physical pattern; the second upper data comprising a finishing value measured by an upper base in a region, wherein the aforementioned one region contains a region different from at least a part of the first solid pattern, or the second upper material includes a finishing value measured on an upper bottom of the second solid pattern different from the first solid pattern; The step of correlating includes the following steps: determining a finishing value correlation function of the following two finishing values: a finishing value measured in the aforementioned first base data, and a measured value in the aforementioned bottom material And a step of determining the aforementioned correction function, comprising the steps of: based on the determined finishing value correlation function, and based on the aforementioned second base data The finishing value is used to calculate an estimated value of the finishing value in the bottom corresponding to the finishing value; and the correction function is determined based on the difference between the following two finishing values: used to obtain the aforementioned second background The finishing value specified in the design data for the physical pattern of the data, and the finishing value in the lower base corresponding to the above-described calculated finishing value. 如請求項13至17中任一項所述之配線基板製造方法,其中,前述第1上底資料和前述第2上底資料中所含的精加工值,是基於利用光學式外觀檢查裝置而得到的資料之精加工值;前述下底資料,是基於利用顯微鏡而得到的資料之下底資料。The method of manufacturing a wiring board according to any one of claims 13 to 17, wherein the finishing values included in the first upper substrate and the second upper substrate are based on an optical appearance inspection device. The finishing value of the obtained data; the aforementioned bottom material is based on the data obtained by using the microscope. 如請求項13至18中任一項所述之配線基板製造方法,其中,前述校正函數,以配置有配線圖案之相同基板面的各個區域為單位來分別決定。The method of manufacturing a wiring board according to any one of claims 13 to 18, wherein the correction function is determined in units of respective regions of the same substrate surface on which the wiring patterns are arranged. 如請求項13至19中任一項所述之配線基板製造方法,其中,前述校正函數,以配置有配線圖案之相同基板的上表面和下表面為單位來分別決定。The method of manufacturing a wiring board according to any one of claims 13 to 19, wherein the correction function is determined in units of an upper surface and a lower surface of the same substrate on which the wiring pattern is arranged. 如請求項13至20中任一項所述之配線基板製造方法,其中,前述校正函數,針對配線圖案中的縱線和橫線的各者來分別決定。The method of manufacturing a wiring board according to any one of claims 13 to 20, wherein the correction function is determined for each of a vertical line and a horizontal line in the wiring pattern. 一種配線基板製造方法,其包含以下步驟: 製作曝光資料,該曝光資料基於作為目標的配線圖案之設計資料;基於曝光資料,在被配置在基板上之感光性光阻層上曝光出曝光圖案;對曝光出前述曝光圖案之感光性光阻層進行顯影,以形成顯影圖案;針對形成有前述顯影圖案之基板進行電路加工,以形成第1實體圖案;製作第1上底資料,該第1上底資料基於自前述第1實體圖案的至少一部分區域中的上底所得到的資料;製作下底資料,該下底資料基於自前述第1實體圖案的至少一部分區域中的下底所得到的資料;決定前述第1上底資料與前述下底資料之相關關係;製作第2上底資料,該第2上底資料基於自一個區域中的上底所得到的資料,其中前述一個區域含有與前述第1實體圖案的至少一部分區域不同的區域,或者該第2上底資料基於自第2實體圖案的上底所得到的資料,其中前述第2實體圖案與前述第1實體圖案不同;基於用來得到前述第2上底資料之實體圖案用的設計資料、前述第2上底資料和前述相關關係,來決定校正函數,該校正函數表示以下二者間的關係:造成設計資料中所規定的精加工值與實體圖案中的精加工值間的差值產生的因素、及用來抑制該差值之校正量;基於前述校正函數,對用來得到前述第2上底資料之實體圖案用的曝光資料進行校正;以及,基於前述已校正過的曝光資料,形成配線圖案。A method for manufacturing a wiring substrate, comprising the steps of: fabricating exposure data based on design data of a target wiring pattern; and exposing an exposure pattern on a photosensitive photoresist layer disposed on the substrate based on exposure data; Developing a photosensitive photoresist layer exposing the exposure pattern to form a development pattern; performing circuit processing on the substrate on which the development pattern is formed to form a first solid pattern; and forming a first upper substrate, the first upper substrate The bottom material is based on data obtained from an upper bottom in at least a portion of the first physical pattern; and the bottom material is based on data obtained from a lower bottom in at least a portion of the first physical pattern Determining the correlation between the first upper base data and the aforementioned lower base data; producing a second upper base data based on data obtained from an upper base in an area, wherein the aforementioned one area contains the foregoing An area of at least a portion of the first physical pattern is different, or the second upper base material is based on the upper base of the second physical pattern The obtained data, wherein the second physical pattern is different from the first physical pattern; and the correction is determined based on design data for obtaining the physical pattern of the second upper base material, the second upper base data, and the correlation relationship a function, the correction function indicating a relationship between the difference between the finishing value specified in the design data and the finishing value in the solid pattern, and the amount of correction for suppressing the difference; The exposure data for obtaining the physical pattern of the second upper base data is corrected based on the correction function; and the wiring pattern is formed based on the corrected exposure data.
TW105122459A 2015-07-17 2016-07-15 Exposure data correction device, wiring pattern forming system, computer program product for correcting exposure data, exposure data correction method, and manufacturing method of wiring board TWI624200B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015143080A JP6491974B2 (en) 2015-07-17 2015-07-17 EXPOSURE DATA CORRECTION DEVICE, WIRING PATTERN FORMING SYSTEM, AND WIRING BOARD MANUFACTURING METHOD

Publications (2)

Publication Number Publication Date
TW201714503A true TW201714503A (en) 2017-04-16
TWI624200B TWI624200B (en) 2018-05-11

Family

ID=57834365

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105122459A TWI624200B (en) 2015-07-17 2016-07-15 Exposure data correction device, wiring pattern forming system, computer program product for correcting exposure data, exposure data correction method, and manufacturing method of wiring board

Country Status (5)

Country Link
JP (1) JP6491974B2 (en)
KR (1) KR102086497B1 (en)
CN (1) CN107850855B (en)
TW (1) TWI624200B (en)
WO (1) WO2017014190A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6663672B2 (en) * 2015-09-25 2020-03-13 株式会社Screenホールディングス Data correction device, drawing device, wiring pattern forming system, inspection device, data correction method, and method of manufacturing wiring substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000252202A (en) * 1999-03-03 2000-09-14 Hitachi Ltd Manufacture of semiconductor device
JP3913924B2 (en) * 1999-03-19 2007-05-09 株式会社東芝 Pattern drawing method and drawing apparatus
JP4018309B2 (en) * 2000-02-14 2007-12-05 松下電器産業株式会社 Circuit parameter extraction method, semiconductor integrated circuit design method and apparatus
JP2003017830A (en) * 2001-06-28 2003-01-17 Nitto Denko Corp Wiring circuit board manufacturing and checking method
TW584789B (en) * 2003-05-26 2004-04-21 Fujitsu Ltd Pattern size correction apparatus, pattern size correction method and photomask
JP2005116929A (en) * 2003-10-10 2005-04-28 Fuji Photo Film Co Ltd System for manufacturing pattern
JP2005115232A (en) * 2003-10-10 2005-04-28 Fuji Photo Film Co Ltd Manufacture support system and program
JP2006303229A (en) * 2005-04-21 2006-11-02 Toray Eng Co Ltd Circuit forming system
JP2007033764A (en) * 2005-07-26 2007-02-08 Fujifilm Holdings Corp Pattern manufacturing system, exposure device, and exposure method
KR20080068820A (en) * 2005-11-16 2008-07-24 가부시키가이샤 니콘 Substrate processing method, photomask manufacturing method, photomask and device manufacturing method
US7842442B2 (en) * 2006-08-31 2010-11-30 Advanced Micro Devices, Inc. Method and system for reducing overlay errors within exposure fields by APC control strategies
CN101192009B (en) * 2006-11-28 2011-07-06 中芯国际集成电路制造(上海)有限公司 Method for establishing OPC model
TW201224678A (en) * 2010-11-04 2012-06-16 Orc Mfg Co Ltd Exposure device

Also Published As

Publication number Publication date
JP2017026710A (en) 2017-02-02
TWI624200B (en) 2018-05-11
JP6491974B2 (en) 2019-03-27
WO2017014190A1 (en) 2017-01-26
KR102086497B1 (en) 2020-03-09
CN107850855A (en) 2018-03-27
CN107850855B (en) 2020-05-26
KR20180014057A (en) 2018-02-07

Similar Documents

Publication Publication Date Title
TWI735747B (en) Metrology method and module, segmented overlay target, and computer program product
KR101337881B1 (en) Method for inspecting and generating job data of pcb inspection system
KR100832660B1 (en) Method and apparatus for evaluating photomask, and method for manufacturing semiconductor device
CN109884862A (en) The compensation device and method of alignment deviation in three-dimensional storage exposure system
JP2011197520A (en) Method for manufacturing photomask
JP2018505388A (en) Prediction and control of critical dimension problems and pattern defects in wafers using interferometry
TW201714503A (en) Exposure data correction device, wiring pattern formation system, and method for manufacturing wiring substrate
KR101947290B1 (en) Method for determining the parameters of an ic manufacturing process model
TWI617899B (en) Method for determining the dose corrections to be applied to an ic manufacturing process by a matching procedure
JP2008071795A (en) Program for prediction of polishing condition, recording medium, and method and apparatus for prediction of polishing condition
JP2016151636A (en) Method for producing photomask, drawing device, inspection method for photomask, inspection device for photomask and method for producing display device
Fuchimoto et al. Measurement technology to quantify 2D pattern shape in sub-2x nm advanced lithography
JP6690204B2 (en) Wiring board manufacturing method, data correction device, wiring pattern forming system, and data correction method
JP5758423B2 (en) How to create a mask layout
JP2017181613A (en) Producing method for circuit board, data correction apparatus, wiring pattern forming system and data correction method
JP5109907B2 (en) Mask inspection method
JP6610210B2 (en) Wiring pattern forming system
Toyoda et al. SEM-contour shape analysis method for advanced semiconductor devices
JP5744998B2 (en) Exposure image compensation method
TWI805181B (en) A compensation method and system using for an etching process, and deep learning system
KR20080062699A (en) Method for optical proximity effect correction
TWI617934B (en) Data correcting apparatus, drawing apparatus, wiring pattern forming system, inspection apparatus, data correcting method and wiring substrate producing method
CN117518736A (en) Overlay error measurement method, device, system and storage medium
Hinaga et al. Determination of copper foil surface roughness from microsection photographs
TW202249133A (en) Alignment error compensation method and system thereof which comprises a data acquisition step and a compensation parameter calculation step

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees