TW201708632A - 磊晶晶圓的製造方法 - Google Patents
磊晶晶圓的製造方法 Download PDFInfo
- Publication number
- TW201708632A TW201708632A TW105106854A TW105106854A TW201708632A TW 201708632 A TW201708632 A TW 201708632A TW 105106854 A TW105106854 A TW 105106854A TW 105106854 A TW105106854 A TW 105106854A TW 201708632 A TW201708632 A TW 201708632A
- Authority
- TW
- Taiwan
- Prior art keywords
- polishing
- wafer
- double
- epitaxial
- epitaxial wafer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000005498 polishing Methods 0.000 claims abstract description 196
- 239000006061 abrasive grain Substances 0.000 claims abstract description 41
- 239000002002 slurry Substances 0.000 claims abstract description 37
- 239000002245 particle Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 21
- 238000000227 grinding Methods 0.000 claims description 16
- 239000004744 fabric Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 229920002635 polyurethane Polymers 0.000 claims description 4
- 239000004814 polyurethane Substances 0.000 claims description 4
- 239000000969 carrier Substances 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000008187 granular material Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 105
- 230000007547 defect Effects 0.000 abstract description 28
- 239000000126 substance Substances 0.000 abstract description 5
- 230000000052 comparative effect Effects 0.000 description 18
- 230000003746 surface roughness Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 238000007740 vapor deposition Methods 0.000 description 12
- 238000007689 inspection Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 4
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- ZIIRLFNUZROIBX-UHFFFAOYSA-N 2,3,5-trichlorobenzene-1,4-diol Chemical compound OC1=CC(Cl)=C(O)C(Cl)=C1Cl ZIIRLFNUZROIBX-UHFFFAOYSA-N 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000011151 fibre-reinforced plastic Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZTEHOZMYMCEYRM-UHFFFAOYSA-N 1-chlorodecane Chemical compound CCCCCCCCCCCl ZTEHOZMYMCEYRM-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015085606A JP6234957B2 (ja) | 2015-04-20 | 2015-04-20 | エピタキシャルウェーハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201708632A true TW201708632A (zh) | 2017-03-01 |
Family
ID=57143054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105106854A TW201708632A (zh) | 2015-04-20 | 2016-03-07 | 磊晶晶圓的製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6234957B2 (enrdf_load_stackoverflow) |
| TW (1) | TW201708632A (enrdf_load_stackoverflow) |
| WO (1) | WO2016170721A1 (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI695094B (zh) * | 2017-06-21 | 2020-06-01 | 德商世創電子材料公司 | 用於加工半導體晶圓的方法、控制系統與工廠 |
| CN111316399A (zh) * | 2017-08-31 | 2020-06-19 | 胜高股份有限公司 | 半导体晶片的制造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6635088B2 (ja) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
| CN112703581A (zh) | 2018-09-25 | 2021-04-23 | 日产化学株式会社 | 使载体的磨损减轻的硅片的研磨方法及用于其的研磨液 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004195571A (ja) * | 2002-12-17 | 2004-07-15 | Noritake Co Ltd | 両面研磨機用ワークキャリア及びその製造方法 |
| JP2010021487A (ja) * | 2008-07-14 | 2010-01-28 | Sumco Corp | 半導体ウェーハおよびその製造方法 |
| JP5401683B2 (ja) * | 2008-08-01 | 2014-01-29 | 株式会社Ｓｕｍｃｏ | 両面鏡面半導体ウェーハおよびその製造方法 |
| JP5644401B2 (ja) * | 2010-11-15 | 2014-12-24 | 株式会社Sumco | エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
| JP5768554B2 (ja) * | 2011-07-21 | 2015-08-26 | 旭硝子株式会社 | 磁気記録媒体用ガラス基板の製造方法および磁気記録媒体用ガラス基板 |
| KR20140098761A (ko) * | 2011-11-16 | 2014-08-08 | 닛산 가가쿠 고교 가부시키 가이샤 | 반도체 웨이퍼용 연마액 조성물 |
-
2015
- 2015-04-20 JP JP2015085606A patent/JP6234957B2/ja active Active
-
2016
- 2016-03-04 WO PCT/JP2016/001183 patent/WO2016170721A1/ja active Application Filing
- 2016-03-07 TW TW105106854A patent/TW201708632A/zh unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI695094B (zh) * | 2017-06-21 | 2020-06-01 | 德商世創電子材料公司 | 用於加工半導體晶圓的方法、控制系統與工廠 |
| US11158549B2 (en) | 2017-06-21 | 2021-10-26 | Siltronic Ag | Method, control system and plant for processing a semiconductor wafer, and semiconductor wafer |
| CN111316399A (zh) * | 2017-08-31 | 2020-06-19 | 胜高股份有限公司 | 半导体晶片的制造方法 |
| CN111316399B (zh) * | 2017-08-31 | 2023-12-26 | 胜高股份有限公司 | 半导体晶片的制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016204187A (ja) | 2016-12-08 |
| JP6234957B2 (ja) | 2017-11-22 |
| WO2016170721A1 (ja) | 2016-10-27 |
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