TW201703162A - 金屬氧化物層狀結構及其形成方法 - Google Patents
金屬氧化物層狀結構及其形成方法 Download PDFInfo
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- TW201703162A TW201703162A TW104138927A TW104138927A TW201703162A TW 201703162 A TW201703162 A TW 201703162A TW 104138927 A TW104138927 A TW 104138927A TW 104138927 A TW104138927 A TW 104138927A TW 201703162 A TW201703162 A TW 201703162A
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- Prior art keywords
- metal oxide
- layer
- dielectric layer
- metallization pattern
- metal
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- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 168
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 168
- 238000001465 metallisation Methods 0.000 claims abstract description 140
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims abstract description 46
- 125000004429 atom Chemical group 0.000 claims abstract description 14
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 370
- 239000012790 adhesive layer Substances 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000002002 slurry Substances 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 59
- 239000000758 substrate Substances 0.000 description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 33
- 239000001301 oxygen Substances 0.000 description 33
- 229910052760 oxygen Inorganic materials 0.000 description 33
- 239000010949 copper Substances 0.000 description 26
- 238000000059 patterning Methods 0.000 description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 22
- 239000010936 titanium Substances 0.000 description 22
- 229910052719 titanium Inorganic materials 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 18
- 238000005530 etching Methods 0.000 description 17
- 238000004528 spin coating Methods 0.000 description 16
- 238000009713 electroplating Methods 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 229920002577 polybenzoxazole Polymers 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 229910001868 water Inorganic materials 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000003475 lamination Methods 0.000 description 8
- 238000005240 physical vapour deposition Methods 0.000 description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 7
- 238000007772 electroless plating Methods 0.000 description 7
- 229920000962 poly(amidoamine) Polymers 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 6
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 6
- 229940112669 cuprous oxide Drugs 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 5
- 239000010941 cobalt Substances 0.000 description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- -1 SiGe Chemical compound 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000005001 laminate film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
本揭露的一些實施例係提供結構與方法。結構係包含積體電路晶粒,其係被封裝物至少從側向封裝,以及位於該積體電路晶粒與封裝物上的重佈結構。重佈結構係電耦合至積體電路晶粒。重佈結構包含至少位於封裝物上的第一介電層、位於第一介電層上的金屬化圖案、位於金屬化圖案上的金屬氧化物層狀結構、以及位於第一介電層與金屬化圖案上的第二介電層。金屬氧化物層狀結構係包含金屬氧化物層,金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,以及金屬化氧物層的厚度係至少50Å。第二介電層係光敏感材料。金屬氧化物層狀結構係位於金屬化圖案與第二介電層之間。
Description
本揭露係關於金屬氧化物層狀結構及其形成方法。
半導體裝置係用於各種電子應用,例如個人電腦、手機、數位相機、以及其他電子設備。通常藉由在半導體基板上方連續沉積絕緣或介電層、傳導層與半導體材料層,以及使用微影蝕刻而圖案化不同材料層,以形成電路組件與元件於其上,而製造半導體裝置。通常在單一半導體晶圓上製造數十或數百個積體電路。沿著切割線切割積體電路而單粒化個別晶粒。而後,將個別晶粒分別封裝於多晶片模組中或是其他形式的封裝。
半導體產業藉由持續縮小最小特徵尺寸,使得更多組件整合在給定的面積中,而持續改良各種電子組件(例如,電晶體、二極體、電阻器、電容器等)的積體密度。在一些應用中,這些更小的電子組件,例如積體電路晶粒,亦需要比習知封裝更小的封裝。
本揭露的一些實施例係提供一種結構,其包括積體電路晶粒,其係被封裝物至少從側向封裝;以及重佈結構,其係位於該積體電路晶粒與該封裝物上,該重佈結構係電耦合至該積體電路晶粒,該重佈結構包括第一介電層,其係至少位於該封裝物上,金屬化
圖案,其係位於該第一介電層上,金屬氧化物層狀結構,其係位於該金屬化圖案上,該金屬氧化物層狀結構係包括金屬氧化物層,該金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,該金屬氧化物層狀結構的厚度係至少50Å。該結構還包含第二介電層,其係位於該第一介電層與該金屬化圖案上,該第二介電層係光敏感材料,該金屬氧化物層狀結構係位於該金屬化圖案與該第二介電層之間。
本揭露的一些實施例係提供一種結構,其包括積體電路晶粒;封裝物,其至少從側向封裝該積體電路晶粒;第一介電層,其係位於該封裝物與該積體電路晶粒的主動側上;金屬化圖案,其係位於該第一介電層上,該金屬化圖案係電耦合至該積體電路晶粒的該主動側;黏著層,其係位於該金屬化圖案上,該黏著層係包括金屬氧化物層,該金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,該黏著層的厚度係至少50Å;以及第二介電層,其係位於該第一介電層與該黏著層上,該第二介電層係光敏感材料。
本揭露的一些實施例係提供一種方法,其包括以封裝物封裝積體電路晶粒;在該封裝物與該積體電路晶粒上方,形成介電層;在該介電層上方,形成金屬化圖案;以含氧電漿處理該金屬化圖案,該處理係在該金屬化圖案上方形成金屬氧化物層,該金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,該金屬氧化物層的厚度係至少50Å;以及在該金屬氧化物層上方形成光敏感材料。
30‧‧‧第一介電層
32‧‧‧金屬化圖案
34‧‧‧原生氧化物
36、36A、36B、36C‧‧‧金屬氧化物層狀結構
36D、36E‧‧‧金屬氧化物層狀結構
38‧‧‧第二介電層
40‧‧‧金屬氧化物層
42‧‧‧金屬氧化物層
44‧‧‧原生氧化物
46‧‧‧原生氧化物
48‧‧‧金屬氧化物層
50‧‧‧金屬氧化物層
52‧‧‧原生氧化物
54‧‧‧金屬氧化物層
56‧‧‧原生氧化物
58‧‧‧金屬氧化物層
60‧‧‧原生氧化物
100‧‧‧載體基板
102‧‧‧脫膜層
104、110‧‧‧介電層
106‧‧‧金屬化圖案
108‧‧‧金屬氧化物層狀結構
114‧‧‧背面重佈結構
112‧‧‧金屬氧化物層狀結構的部分
116‧‧‧貫穿通路
118‧‧‧金屬-金屬介面
119‧‧‧積體電路晶粒
122‧‧‧半導體基板
124‧‧‧互連結構
126‧‧‧墊
128‧‧‧鈍化膜
130‧‧‧晶粒連接物
132‧‧‧介電層
120‧‧‧黏著劑
134‧‧‧封裝物
166‧‧‧前面重佈結構
136、142、152、162‧‧‧介電層
138、146、156‧‧‧金屬化圖案
140‧‧‧金屬氧化物層狀結構
144‧‧‧金屬氧化物層狀結構的部分
150‧‧‧金屬氧化物層狀結構
154‧‧‧金屬氧化物層狀結構的部分
160‧‧‧金屬氧化物層狀結構
164‧‧‧金屬氧化物層狀結構的部分
166‧‧‧前面重佈結構
168‧‧‧墊
170‧‧‧金屬-金屬介面
172‧‧‧外部電連接物
174‧‧‧膠帶
180‧‧‧封裝
182‧‧‧基板
184‧‧‧墊
300‧‧‧積體電路晶粒
302‧‧‧外部電連接物
304‧‧‧底膠填充材料
310‧‧‧封裝組件
312‧‧‧外部電連接物
320‧‧‧封裝
322‧‧‧外部電連接物
330‧‧‧封裝
332‧‧‧外部電連接物
為協助讀者達到最佳理解效果,建議在閱讀本揭露時同時參考附件圖示及其詳細文字敘述說明。請注意為遵循業界標準作法,本專利說明書中的圖式不一定按照正確的比例繪製。在某些圖式中,尺寸可能刻意放大或縮小,以協助讀者清楚了解其中的討論內容。
圖1至圖3係根據一些實施例說明製程過程中的剖面圖。
圖4A與4B係根據一些實施例說明第一範例的金屬氧化物層狀結構與形成該金屬氧化物層狀結構的方法。
圖5A與5B係根據一些實施例說明第二範例的金屬氧化物層狀結構與形成該金屬氧化物層狀結構的方法。
圖6A與6B係根據一些實施例說明第三範例的金屬氧化物層狀結構與形成該金屬氧化物層狀結構的方法。
圖7A與7B係根據一些實施例說明第四範例的金屬氧化物層狀結構與形成該金屬氧化物層狀結構的方法。
圖8A與8B根據一些實施例說明第五範例的金屬氧化物層狀結構與形成該金屬氧化物層狀結構的方法。
圖9至23係根據一些實施例說明形成封裝上晶片(CoP)與/或封裝上封裝(PoP)結構過程中的中間步驟之剖面圖。
圖24係根據一些實施例說明CoP結構。
圖25係根據一些實施例說明第一PoP結構。
圖26根據一些實施例說明第二PoP結構。
圖27係根據一些實施例說明第三PoP結構。
本揭露提供了數個不同的實施方法或實施例,可用於實現本發明的不同特徵。為簡化說明起見,本揭露也同時描述了特定零組件與佈置的範例。請注意提供這些特定範例的目的僅在於示範,而非予以任何限制。舉例而言,在以下說明第一特徵如何在第二特徵上或上方的敘述中,可能會包括某些實施例,其中第一特徵與第二特徵為直接接觸,而敘述中也可能包括其他不同實施例,其中第一特徵與第二特徵中間另有其他特徵,以致於第一特徵與第二特徵並不直接接觸。此外,本揭露中的各種範例可能使用重複的參考數字和/或文字註記,以使文件更加簡單化和明確,這些重複的參考數字與註記不
代表不同的實施例與配置之間的關聯性。
另外,本揭露在使用與空間相關的敘述詞彙,如“在...之下”,“低”,“下”,“上方”,“之上”,“下”,“頂”,“底”和類似詞彙時,為便於敘述,其用法均在於描述圖示中一個元件或特徵與另一個(或多個)元件或特徵的相對關係。除了圖示中所顯示的角度方向外,這些空間相對詞彙也用來描述該裝置在使用中以及操作時的可能角度和方向。該裝置的角度方向可能不同(旋轉90度或其它方位),而在本揭露所使用的這些空間相關敘述可以同樣方式加以解釋。
本揭露的實施例係關於特定內容,稱為扇出(fan-out)或扇入(fan-in)晶圓級封裝,例如用於封裝上晶片(chip-on-package,CoP)以及/或封裝上封裝(package-on-package,PoP)結構。在閱讀本揭露之後,該技藝中具有通常技術者清楚理解可有其他應用的其他實施例,例如不同的封裝形式或不同架構。應注意本揭露所述之實施例可不需說明存在結構中的每一個組件或特徵。例如,例如當以一個組件足以傳達實施例內容時,圖式可省略重複的組件。再者,本揭露所述之方法實施例係以特定順序進行;然而,可用任何邏輯順序進行其他方法實施例。
圖1至3係根據一些實施例說明製程過程之中間步驟的剖面圖。圖1係說明第一介電層30、在第一介電層30上的金屬化圖案32、以及在金屬化圖案32上的原生氧化物(native oxide)34。在一些實施例中,第一介電層30係由聚合物製成,其可為光敏感材料,例如聚苯并噁唑(polybenzoxazole,PBO)、聚亞醯胺、苯并環丁烯(benzocyclobutene,BCB)、或類似物。可藉由任何可接受的沉積製程,例如旋塗、壓層、類似方法、或其組合,在任何支撐基板上形成第一介電層30,後續圖式係描述其中一些範例。
關於形成金屬化圖案32的範例,在第一介電層30上形成晶種層(未繪示)。在一些實施例中,晶種層為金屬層,其可為單層或是包含由不同材料所形成之複數個子層的複合層。在一些實施例中,晶種層係包括鈦層與位於鈦層上方的銅層。例如,可使用物理氣相沉積(PVD)、濺鍍、或類似方法,形成晶種層。而後,在晶種層上形成且圖案化光阻。可藉由旋塗、或類似方法形成光阻,以及可將光阻曝光進行圖案化。光阻的圖案係對應於金屬化圖案32。圖案化形成穿過光阻的開口,以暴露晶種層。在光阻的開口中與晶種層的暴露部分上形成金屬。可藉由電鍍,例如電鍍或是無電鍍、或類似方法,形成該金屬。該金屬可為銅、鎳、鈷、鈦、鎢、鋁、或類似物。而後,移除未有金屬形成於其上的光阻與晶種層的部分。可藉由任何可接受的灰化或是剝除製程,例如使用氧氣電漿或類似方法,移除該光阻。一旦移除光阻,例如使用可接受的蝕刻製程,例如濕式或乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬係形成金屬化圖案32。
可藉由金屬化圖案32的金屬與大氣環境中的氧氣作用而形成原生氧化物34。例如,在蝕刻之後,當清理金屬時,可藉由金屬與水、過氧化氫、或類似物之間的作用而形成原生氧化物34。再者,當金屬暴露於空氣時,可藉由金屬與空氣中的氧氣作用而形成原生氧化物34。可藉由許多方式形成原生氧化物34。
在圖2中,在金屬化圖案32上形成金屬氧化物層狀結構36。在一些實施例中,金屬氧化物層狀結構36可包含原生氧化物34,或是在其他實施例中,可移除原生氧化物34。各種金屬氧化物層狀結構36的範例與詳細說明係如圖4A-B、5A-B、6A-B、7A-B以及8A-B所述。金屬氧化物層狀結構36係包含金屬氧化物層,其本質上係由金屬原子組成,例如金屬化圖案32的金屬之原子以及氧氣原子以
實質上1:1的比例(為了方便說明,此後該比例係表示為「Mx:O=1:1」。實質上為1:1的比例可包含0.8:1至1.2:1,例如0.9:1至1.1:1。例如,在一些實施例中,金屬化圖案32為銅,金屬氧化物層狀結構36係包含氧化銅(CuO)層,以及該層中的銅原子與氧原子的比例實質上為1:1。該技藝中具有通常技術者可理解金屬氧化物層主要係由金屬原子與氧原子以實質上1;1的比例組成,金屬氧化物層中仍可包含其他附帶的原子,例如氮與/或碳。
在圖3中,在金屬氧化物層狀結構36與第一介電層30上,形成第二介電層38。在一些實施例中,第二介電層38係由聚合物所形成,其可為光敏感材料,例如聚苯并噁唑(PBO)、聚亞醯胺、苯并環丁烯(BCB)、或類似物。在本揭露中,光敏感材料係包含顯影材料,其在顯影之前係對光敏感的。可藉由任何合適的沉積製程,例如旋塗、壓層、類似方法、或其組合,形成第二介電層38。
圖4A與4B係根據一些實施例說明第一範例的金屬氧化物層狀結構36A以及形成金屬氧化物層狀結構36A的方法。圖4A係說明金屬化圖案32,其係在圖4B的步驟200中,並請參閱圖1。進一步說明如圖1所示,可在金屬化圖案32上,形成原生氧化物34。在圖4B的步驟202中,移除原生氧化物34。該移除可使用合適的清理製程,例如氮氣(N2)電漿製程。在圖4B的步驟204中,在金屬化圖案32上,直接形成具有Mx:O=1:1的金屬氧化物層40。可用含氧電漿,例如包括氧氣(O2)、臭氧(O3)、水(H2O)、類似物、或其組合的電漿,處理金屬化圖案32而形成金屬氧化物層40。含氧電漿可包括其他電晶物種,例如氮氣(N2)、氫氣(H2)、氬氣(Ar)、類似物、或其組合。例如,金屬化圖案32可為銅,以及金屬氧化物層40可為氧化銅(CuO)。如前所述。金屬氧化物層狀結構36A係由具有Mx:O=1:1的金屬氧化物層40所組成。在圖4B的步驟206中,在金屬氧化物層狀結構36A上形
成第二介電層38,如圖3所示。
圖5A與圖5B係根據一些實施例說明第二範例的金屬氧化物層狀結構36B以及形成金屬氧化物層狀結構36B的方法。圖5A係說明金屬化圖案32,其係在圖5B的步驟210中,並且形成如圖1所述。如圖1所示,可在金屬化圖案32上形成原生氧化物34。在圖5B的步驟212中,移除原生氧化物34。該移除可為可接受的清理製程,例如氮氣(N2)電漿製程。在圖5B的步驟214中,在金屬化圖案32上直接形成具有Mx:O=1:1的金屬氧化物層42。可用含氧電漿,例如包括氧氣(O2)、臭氧(O3)、水(H2O)、類似物、或其組合的電漿,處理金屬化圖案32形成金屬氧化物層42。含氧電漿可包括其他電漿物種,例如氮氣(N2)、氫氣(H2)、氬氣(Ar)、類似物、或其組合。在圖5B的步驟216中,在金屬氧化物層42上形成原生氧化物44。將金屬化圖案32與金屬氧化物層42暴露至含有氧的環境中,例如在清理製程中使用水或是將結構暴露至空氣,可形成原生氧化物44。例如,金屬化圖案32可為銅;金屬氧化物層42可為氧化銅(CuO);以及原生氧化物44可為氧化亞銅(Cu2O)。如前所述,金屬氧化物層狀結構36B係由具有Mx:O=1:1的金屬氧化物層42與原生氧化物44所組成。在圖5B的步驟218中,在金屬氧化物層狀結構36B上形成第二介電層38,如圖3所示。
圖6A與6B係根據一些實施例說明第三範例的金屬氧化物層狀結構36C與形成金屬氧化物層狀結構36C的方法。圖6A係說明金屬化圖案32,其形成係如圖6B的步驟220與圖1所示。參閱圖1以及在圖6B的步驟222中,在金屬化圖案32上直接形成原生氧化物46。在圖6B的步驟224中,在原生氧化物46上直接形成具有Mx:O=1:1的金屬氧化物層48。可用含氧電漿,例如包括氧氣(O2)、臭氧(O3)、水(H2O)、類似物、或其組合的電漿,處理原生氧化物46與金屬化圖案32,形成金屬氧化物層48。含氧電漿可包括其他電漿物種,例如氮氣
(N2)、氫氣(H2)、氬氣(Ar)、類似物、或其組合。例如,金屬化圖案32可為銅;原生氧化物46可為氧化亞銅(Cu2O);以及金屬氧化物層48可為氧化銅(CuO)。如前所述,金屬氧化物層狀結構36C係由原生氧化物46與具有Mx:O=1:1的金屬氧化物層48所組成。在圖6B的步驟226中,在金屬氧化物層狀結構36C上形成第二介電層38,如圖3所示。
圖7A與7B係根據一些實施例說明第四範例的金屬氧化物層狀結構36D與形成金屬氧化物層狀結構36D的方法。圖7A係說明金屬化圖案32,其形成係如圖7B的步驟230與圖1所述。如圖1所示,可在金屬化圖案32上形成原生氧化物34。在圖7B的步驟232中,移除原生氧化物34。該移除可使用可接受的清理製程,例如氮氣(N2)電漿製程。在圖7B的步驟234中,在金屬化圖案32上直接形成具有Mx:O=1:1的金屬氧化物層50。可用含氧電漿,例如包括氧氣(O2)、臭氧(O3)、水(H2O)、類似物、或其組合的電漿,處理金屬化圖案32而形成金屬氧化物層50。含氧電漿可包括其他電晶物種,例如氮氣(N2)、氫氣(H2)、氬氣(Ar)、類似物、或其組合。在圖7B的步驟236中,在金屬氧化物層50上形成原生氧化物52。將金屬化圖案32與金屬氧化物層50暴露至含有氧的環境中,例如在清理製程中使用水或是將結構暴露至空氣,可形成原生氧化物52。在圖7B的步驟238中,在原生氧化物52上直接形成具有Mx:O=1:1的金屬氧化物層54。可用含氧電漿,例如包括氧氣(O2)、臭氧(O3)、水(H2O)、類似物、或其組合的電漿,處理原生氧化物52、金屬氧化物層50以及金屬化圖案32,而形成金屬氧化物層54。含氧電漿可包括其他電晶物種,例如氮氣(N2)、氫氣(H2)、氬氣(Ar)、類似物、或其組合。例如,金屬化圖案32可為銅;金屬氧化層50可為氧化銅(CuO);原生氧化物52可為氧化亞銅(Cu2O);以及金屬氧化物層54可為氧化銅(CuO)。如前所述,金屬氧化物層狀結構36D係由具有Mx:O=1:1的金屬氧化物層50、原生氧化物
52、以及具有Mx:O=1:1的金屬氧化物層54所組成。在圖7B的步驟240中,在金屬氧化物層狀結構36D上形成第二介電層38,如圖3所示。
圖8A與8B係根據一些實施例說明第五範例的金屬氧化物層狀結構36E以及形成金屬氧化物層狀結構36E的方法。圖8A係說明金屬化圖案32,其形成係如圖8B的步驟250與圖1所述。如圖1所示,在圖8B的步驟252中,在金屬化圖案32上直接形成原生氧化物56。在圖8B的步驟254中,在原生氧化物56上直接形成具有Mx:O=1:1的金屬氧化物層58。可用含氧電漿,例如包括氧氣(O2)、臭氧(O3)、水(H2O)、類似物、或其組合的電漿,處理原生氧化物56,而形成金屬氧化物層58。含氧電漿可包括其他電晶物種,例如氮氣(N2)、氫氣(H2)、氬氣(Ar)、類似物、或其組合。在圖8B的步驟256中,在金屬氧化物層58上形成原生氧化物60。將金屬化圖案32與金屬氧化物層58暴露至含有氧的環境中,例如在清理製程中使用水或是將結構暴露至空氣,可形成原生氧化物60。例如,金屬化圖案32可為銅;原生氧化物56可為氧化亞銅(Cu2O);金屬氧化物層58可為氧化銅(CuO);以及原生氧化物60可為氧化亞銅(Cu2O)。如前所述,金屬氧化物層狀結構36E係由原生氧化物56;具有Mx:O=1:1的金屬氧化物層58、以及原生氧化物60所組成。在圖8B的步驟258中,在金屬氧化物層狀結構36E上形成第二介電層38,如圖3所示。
金屬氧化物層狀結構36,例如金屬氧化物層狀結構36A、36B、36C、36D與36E,可促進下方金屬化與上方介電層之間(如上所述,其可為光敏感材料)的附著。因此,金屬氧化物層狀結構36可稱為黏著結構。在一些實施例中,金屬氧化物層狀結構36的厚度係大於或等於約50Å,例如在約50Å至約200Å的範圍中,更特別地是在約50Å至約100Å的範圍中。例如,金屬氧化物層狀結構36之具有Mx:O=1:1的金屬氧化物層的厚度,例如金屬氧化物層狀結構36A的金屬氧化物層
40的厚度,係大於或等於約50Å,例如在約50Å至約200Å的範圍中,更特別地是在約50Å至約100Å的範圍中。已經發現金屬氧化物層狀結構36的厚度大於或等於約50Å會增加黏著。
應注意,雖然已經提供特定範例使用銅、氧化亞銅、以及氧化銅,但也可使用其他金屬與氧化物。該技藝中具有通常技術者可理解當使用不同金屬時,例如鎳、鈷、鈦、鎢、鋁、或類似物,可形成不同的氧化物。
圖9至23係根據一些實施例說明形成封裝上晶片(CoP)與/或封裝上封裝(PoP)結構的製程之中間步驟的剖面圖。圖9係說明載體結構100與形成於載體基板100上的脫膜層102。載體基板100可為玻璃載體基板、陶瓷載體基板、或類似物。載體基板100可為晶圓,因而可在載體基板100上同時形成多個封裝。脫膜層102可由聚合物為基底的材料所形成,可沿著載體基板100從後續步驟中所形成的上方結構移除。在一些實施例中,脫膜層102係環氧化合物(epoxy)為基底的熱釋放材料,當其被加熱時,會失去黏性,該熱釋放材料例如光熱轉換(LTHC)脫膜塗覆。在一些實施例中,脫膜層102可為紫外線(UV)膠,當其暴露至UV光時,會失去黏性。脫膜層102可施加為液體並且被硬化,可為壓層在載體基板100上的壓層膜,或是可為類似物。脫膜層102的頂表面可為平坦的,並且可具有高程度的共平面性。
在圖9至11中,形成背面重佈結構114。背面重佈結構包括介電層104與110以及金屬化圖案106。如圖9所示,在脫膜層102上形成介電層104。介電層104的底表面可接觸脫膜層102的頂表面。在一些實施例中,介電層104係由聚合物形成,其可為光敏感材料,例如PBO、聚亞醯胺、BCB、或類似物。介電層104可由任何可接受的沉積製程形成,例如旋塗、壓層、類似方法、或其組合。
在圖10中,在介電層104上形成金屬化圖案106。在形成金屬化圖案106的範例中,在介電層104上方形成晶種層(未繪示)。
在一些實施例中,晶種層係金屬層,其可為單層或是包括複數個由不同材料形成的次層之複合層。在一些實施例中,晶種層包括鈦層以及在鈦層上方的銅層。可使用例如PVD、濺鍍、或類似方法形成晶種層。而後,在晶種層上形成且圖案化光阻。光阻可藉由旋塗或類似方法而形成,並且可暴露至光進行圖案化。光阻的圖案係對應於金屬化圖案106。圖案化形成穿過光阻的開口,以暴露晶種層。在光阻的開口中以及晶種層的暴露部分尚,形成金屬。可藉由電鍍,例如電鍍或是無電鍍、或類似方法,形成該金屬。該金屬可銅、鎳、鈷、鈦、鎢、鋁、或類似物。而後,移除未形成金屬的光阻與晶種層之部分。藉由可接受的灰化或剝除製程,例如使用氧氣電漿或類似方法,移除光阻。一旦移除光阻,使用可接受的蝕刻製程,例如濕式或乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬形成金屬化圖案106。
而後,在金屬化圖案106的暴露表面上形成金屬氧化物層狀結構108。金屬氧化物層狀結構108可具有圖4A、5A、6A、7A與8A所示的任何結構或類似物,並且可由圖4B、5B、6B、7B與8B所示之任何方法或類似方法而形成。
在圖11中,在金屬化圖案106與介電層104上形成介電層110。在一些實施例中,介電層110係由聚合物形成,其可為光敏感材料,例如PBO、聚亞醯胺、BCB、或類似物。可藉由旋塗、壓層、類似方法、或其組合,形成介電層110。而後,將介電層110圖案化以形成開口,暴露金屬化圖案106上的金屬氧化物層狀結構108的部分112。當介電層110係光敏感材料時,使用微影蝕刻遮罩將介電層110暴露至光而後將介電層110顯影,而進行圖案化。可使用其他圖案化技術,例如蝕刻。
如前所述,背面重佈結構114包含兩個介電層104與
110以及一金屬化圖案106。在其他實施例中,背面重佈結構114可包括任何數目的介電層、金屬化圖案、以及通路。可藉由形成金屬化圖案106與介電層110的製程,在背面重佈結構114中形成一或多個額外的金屬化圖案與介電層。在下方介電層的開口中形成晶種層與金屬化圖案的金屬而形成金屬化圖案的過程中,可形成通路。因此,通路可互連且電耦合各種金屬化圖案。
在圖12中,形成貫穿通路116。在形成貫穿通路116的範例中,移除金屬氧化物層狀結構108之暴露部分以暴露部分的金屬化圖案106,而後,在介電層110與金屬化圖案106的暴露部分上形成晶種層(未繪示)。可藉由濺鍍蝕刻或類似方法金屬氧化物層狀結構108的暴露部分112。在一些實施例中,晶種層是金屬層,其可為單層或是包括不同材料形成的複數個次層的複合層。在一些實施例中,晶種層係包括鈦層以及在鈦層上方的銅層。例如,可使用PVD、濺鍍、或類似方法,形成晶種層。可在形成晶種層的相同製程腔室中移除金屬氧化物層狀結構108的暴露部分112。而後,在晶種層上形成且圖案化光阻。可藉由旋塗或類似方法形成光阻,並且可將其暴露至光進行圖案化。光阻的圖案係對應於貫穿通路116。圖案化形成穿過光阻的開口以暴露晶種層。在光阻的開口中以及晶種層的暴露部分上,形成金屬。可藉由電鍍,例如電鍍或是無電鍍、或是類似方法,形成該金屬。該金屬可為銅、鈦、鎢、鋁、或類似物。而後,移除未有該金屬形成於其上的光阻與晶種層的部分。藉由可接受的灰化或剝除製程,例如使用氧氣電漿或類似方法,移除光阻。一旦移除光阻,使用可接受的蝕刻製程,例如濕式或是乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬形成貫穿通路116。由於係從金屬化圖案106移除金屬氧化物層狀結構108的部分112,因而在貫穿通路116與金屬化圖案106之間形成直接金屬-金屬介面118。
在圖12中,積體電路晶粒119係藉由黏著劑120而附著至介電層110。如前所述,在封裝結構中附著一個積體電路晶粒119,而在其他實施例中,可在封裝結構中附著多個積體電路晶粒。在附著至介電層110之前,根據可應用的製程處理積體電路晶粒119,以於積體電路晶粒119中形成積體電路。例如,積體電路晶粒119包括半導體基板122。半導體基板122可為大塊半導體基板、絕緣體上半導體(SOI)基板、多層或梯度基板、或類似物。半導體基板122的半導體材料可為摻雜的或是未摻雜的,並且可包含元素半導體,例如矽或鍺;包含SiGe、SiC、GaAs、GaP、InP、InAs、InSb、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP、GaInAsP或類似物的化合物或合金半導體;或其組合。可在半導體基板122中與/或半導體基板122上形成例如電晶體、二極體、電容器、電阻器等裝置,並且可藉由互連結構124而互連,該互連結構124的形成係藉由半導體基板122上的一或多介電層中的金屬化圖案,以形成積體電路。
積體電路晶粒119進一步包括墊126,例如鋁墊,以形成外部連接。墊126係位於積體電路晶粒119的主動側上。鈍化膜128係位於積體電路晶粒119上以及位於部分的墊126上。開口係穿過鈍化膜128至墊126。晶粒連接物130,例如傳導柱(例如,包括金屬)係位於穿過鈍化膜128的開口中,並且機械式且電耦合至個別墊126。例如,藉由電鍍或類似方法,形成晶粒連接物130。晶粒連接物130係電耦合積體電路晶粒119的積體電路。
介電材料132係位於積體電路晶粒119的主動側上,例如在鈍化膜128與晶粒連接物130上。介電材料132從側向封裝晶粒連接物130,以及介電層132係與積體電路晶粒119在側向上齊平。介電材料132可為聚合物,例如PBO、聚亞醯胺、BCB、或類似物;氮化物,例如氮化矽或類似物;氧化物,例如氧化矽、PSG、BSG、
BPSG、或類似物;類似物、或其組合,並且可藉由例如旋塗、壓層、CVD、或類似方法形成。
黏著劑120係位於積體電路晶粒119的背面上,並且將積體電路晶粒119附著至背面重佈結構114,例如介電層110。黏著劑120可為任何合適的黏著劑、環氧化合物、或類似物。黏著劑120可施加至積體電路晶粒119的背面,例如個別半導體晶圓的背面。積體電路晶粒119可被單粒化,例如藉由鋸或是切割,並且使用撿放工具(pick-and-place tool)藉由黏著劑120而附著至介電層110。
在圖13中,在各種組件上形成封裝物134。封裝物134可為模塑料、環氧化合物、或類似物,並且可藉由壓縮成形、轉移成形、或類似方法而施用。在硬化之後,封裝物134可進行研磨製程,以暴露貫穿通路116與晶粒連接物130。在研磨製程之後,貫穿通路116、晶粒連接物130以及封裝物134係齊平。在一些實施例中,若已經暴露貫穿通路116與晶粒連接物130,則可省略研磨。
在圖14至20中,形成前面重佈結構166。如圖20所示,前面重佈結構166係包括介電層136、142、152與162以及金屬化圖案138、146與156。
在圖14中,在封裝物134、貫穿通路116、以及晶粒連接物130上,形成介電層136。在一些實施例中,介電層136係由聚合物所形成,其可為光敏感材料,例如PBO、聚亞醯胺、BCB、或類似物。藉由旋塗、壓層、類似方法、或其組合,可形成介電層136。而後將介電層136圖案化而形成開口,以暴露貫穿通路116與晶粒連接物130的部分。當介電層136係光敏感材料時,圖案化可藉由使用微影蝕刻遮罩將介電層136暴露至光,而後將介電層136顯影。可使用其他圖案化技術,例如蝕刻。
在圖15中,在介電層136上形成具有通路的金屬化圖
案138。在形成金屬化圖案138的範例中,在介電層136上方與穿過介電層136的開口中,形成晶種層(未繪示)。在一些實施例中,晶種層係金屬層,其可為單層或是包括不同材料所形成的複數個次層之複合層。在一些實施例中,晶種層包括鈦層以及在鈦層上方的銅層。例如,可使用PVD或類似方法形成晶種層。而後,在晶種層上形成且圖案化光阻。可藉由旋塗或類似方法形成光阻,並且可將其暴露至光進行圖案化。光阻的圖案係對應於金屬化圖案138。圖案化形成穿過光阻的開口以暴露晶種層。在光阻的開口中以及晶種層的暴露部分上形成金屬。可藉由電鍍,例如電鍍或無電鍍、或類似方法,形成該金屬。該金屬可包括如銅、鎳、鈷、鈦、鎢、鋁、或類似物的金屬。而後,移除未有金屬形成於其上的光阻與晶種層的部分。藉由可接受的灰化或剝除製程,例如使用氧氣電漿或類似方法,移除光阻。一旦移除光阻,例如使用可接受的蝕刻製程,例如濕式或乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬形成金屬化圖案138與通路。例如,在穿過介電層136的開口中形成通路至貫穿通路116與/或晶粒連接物130。
而後,在金屬化圖案138的暴露表面上形成金屬氧化物層狀結構140。金屬氧化物層狀結構140可具有圖4A、5A、6A、7A與8A所示之任何結構或類似物,並且可藉由圖4B、5B、6B、7B與8B所示之任何方法或類似方法而形成。
在圖16中,在金屬化圖案138與介電層136上形成介電層142。在一些實施例中,介電層142由聚合物所形成,其可為光敏感材料,例如PBO、聚亞醯胺、BCB、或類似物。可藉由旋塗、壓層、類似方法、或其組合,形成介電層142。而後,將介電層142圖案化以形成開口而暴露金屬化圖案138上的金屬氧化物層狀結構140的部分144。當介電層142係光敏感材料時,圖案化可藉由使用微影蝕刻遮罩
將介電層142暴露至光而後將介電層142顯影。可使用其他圖案化技術,例如蝕刻。
在圖17中,在介電層142上形成具有通路的金屬化圖案146。在形成金屬化圖案146的範例中,移除金屬氧化物層狀結構140的暴露部分144以暴露金屬化圖案138,而後,在介電層142與金屬化圖案138的暴露部分上,形成晶種層(未繪示)。可藉由濺鍍蝕刻或類似方法,移除金屬氧化物層狀結構140的暴露部分144。在一些實施例中,晶種層係金屬層,其可為單層或是包含由不同材料所形成之複數個子層的複合層。在一些實施例中,晶種層係包括鈦層與位於鈦層上方的銅層。例如,可使用PVD、濺鍍、或類似方法,形成晶種層。可在形成晶種層的相同製程腔室中移除金屬氧化物層狀結構140的暴露部分144。而後,在晶種層上形成且圖案化光阻。可藉由旋塗或類似方法形成光阻,並且可將其暴露至光進行圖案化。光阻的圖案係對應於貫穿通路146。圖案化形成穿過光阻的開口以暴露晶種層。在光阻的開口中以及晶種層的暴露部分上,形成金屬。可藉由電鍍,例如電鍍或是無電鍍、或是類似方法,形成該金屬。該金屬可為銅、鎳鈷、鈦、鎢、鋁、或類似物。或類似物。而後,移除未有金屬形成於其上的光阻與晶種層的部分。藉由可接受的灰化或是剝除製程,例如使用氧氣電漿或類似方法,移除該光阻。一旦移除光阻,例如使用可接受的蝕刻製程,例如濕式或乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬係形成金屬化圖案146與通路。在穿過介電層142的開口中形成通路至金屬化圖案138的部分。由於係從金屬化圖案138移除金屬氧化物層狀結構140的部分144,因而在金屬化圖案146的通路與金屬化圖案138之間形成直接金屬-金屬介面148。
而後,在金屬層圖案146的暴露表面上形成金屬氧化物層狀結構150。金屬氧化物層狀結構150可具有圖4A、5A、6A、7A
與8A所示之任何結構或類似物,並且可藉由圖4B、5B、6B、7B與8B所示之任何方法或類似方法而形成。
在圖18中,在金屬化圖案146與介電層142上形成介電層152。在一些實施例中,介電層152係由聚合物所形成,其可為光敏感材料,例如PBO、聚亞醯胺、BCB、或類似物。藉由旋塗、壓層、類似方法、或其組合,可形成介電層152。而後將介電層152圖案化而形。成開口,以暴露金屬化圖案146上的金屬氧化物層狀結構150的部分154當介電層152係光敏感材料時,圖案化可使用微影蝕刻遮罩將介電層152暴露至光而後將介電層152顯影。可使用其他圖案化技術,例如蝕刻。
在圖19中,在介電層152上形成具有通路的金屬化圖案156。在形成金屬化圖案156的範例中,移除金屬氧化物層狀結構150的暴露部分154,以暴露金屬化圖案146的部分,而後,在介電層152與金屬化圖案146的暴露部分上形成晶種層(未繪示)。可藉由濺鍍蝕刻或類似方法,移除金屬氧化物層狀結構150的暴露部分154。在一些實施例中,晶種層係金屬層,其可為單層或是包括不同材料所形成的複數個次層之複合層。在一些實施例中,晶種層包括鈦層以及在鈦層上方的銅層。例如,可使用PVD、濺鍍或類似方法形成晶種層。可在形成晶種層的相同製程腔室中移除金屬氧化物層狀結構150的暴露部分154。而後,在晶種層上形成且圖案化光阻。可藉由旋塗或類似方法形成光阻,並且可將其暴露至光進行圖案化。光阻的圖案係對應於金屬化圖案156。圖案化形成穿過光阻的開口以暴露晶種層。在光阻的開口中以及晶種層的暴露部分上,形成金屬。可藉由電鍍,例如電鍍或是無電鍍、或是類似方法,形成該金屬。該金屬可為銅、鎳、鈷、鈦、鎢、鋁、或類似物。而後,移除未有該金屬形成於其上的光阻與晶種層的部分。藉由可接受的灰化或剝除製程,例如使用氧氣電
漿或類似方法,移除光阻。一旦移除光阻,使用可接受的蝕刻製程,例如濕式或是乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬形成金屬化圖案156與通路。在穿過介電層152的開口中形成通路至例如金屬化圖案146的部分。由於係從金屬化圖案146移除金屬氧化物層狀結構150的部分154,因而在金屬化圖案156的通路與金屬化圖案146之間形成直接金屬-金屬介面158。
而後,在金屬化圖案156的暴露表面上形成金屬氧化物層狀結構160。金屬氧化物層狀結構160可具有圖4A、5A、6A、7A與8A所示之任何結構或類似物,並且可藉由圖4B、5B、6B、7B與8B所示之任何方法或類似方法而形成。
在圖20中,在金屬化圖案156與介電層152上形成介電層162。在一些實施例中,介電層162係由聚合物所形成,其可為光敏感材料,例如PBO、聚亞醯胺、BCB、或類似物。藉由旋塗、壓層、類似方法、或其組合,可形成介電層162。而後將介電層162圖案化而形成開口,以暴露金屬化圖案156上的金屬氧化物層狀結構160的部分164。當介電層162係光敏感材料時,圖案化可使用微影蝕刻遮罩將介電層162暴露至光而後將介電層162顯影。可使用其他圖案化技術,例如蝕刻。
前面重佈結構166的說明作為範例。可在前面重佈結構166中形成較多或較少的介電層與金屬化圖案。如果形成較少的介電層與金屬化圖案,則可省略上述的步驟與製程。如果形成較多個介電層與金屬化圖案,則可重複上述的步驟與製程。該技藝中具有通常技術者理解可省略或重複哪些步驟與製程。
在圖21中,在前面重佈結構166的外側上形成墊168,其可稱為凸塊下金屬(UBM)。在所述的實施例中,形成墊168穿過開口至金屬圖案156,該開口係穿過介電層162。在形成墊168的範例
中,移除金屬氧化物層狀結構160的暴露部分164以暴露金屬化圖案156的部分,而後,在介電層162與金屬化圖案156的暴露部分上形成晶種層(未繪示)。可藉由濺鍍蝕刻或類似方法,移除金屬氧化物層狀結構160的暴露部分164。在一些實施例中,晶種層係金屬層,其可為單層或是包括不同材料所形成的複數個次層之複合層。在一些實施例中,晶種層包括鈦層以及在鈦層上方的銅層。例如,可使用PVD、濺鍍、或類似方法形成晶種層。而後,在晶種層上形成且圖案化光阻。可在形成晶種層的相同製程腔室中移除金屬氧化物層狀結構160的暴露部分164。而後,在晶種層上形成且圖案化光阻。可藉由旋塗、或類似方法形成光阻,以及可將光阻暴露至光進行圖案化。光阻的圖案係對應於墊168。圖案化形成穿過光阻的開口,以暴露晶種層。在光阻的開口中與晶種層的暴露部分上形成金屬。可藉由電鍍,例如電鍍或是無電鍍、或類似方法,形成該金屬。該金屬可為銅、鈦、鎢、鋁、或類似物。而後,移除未有金屬形成於其上的光阻與晶種層的部分。藉由可接受的灰化或剝除製程,例如使用氧氣電漿或類似方法,移除光阻。一旦移除光阻,使用可接受的蝕刻製程,例如濕式或乾式蝕刻,移除晶種層的暴露部分。晶種層的剩餘部分與金屬形成墊168。例如,在穿過介電層162的開口中形成墊168至金屬化圖案156的部分。由於係從金屬化圖案156移除金屬氧化物層狀結構160的部分164,因而在墊168的通路與金屬化圖案156之間形成直接金屬-金屬介面170。
在圖22中,在墊168上,形成外部電連接物172,例如焊球,如球柵陣列(GBA)球。外部電連接物172可包含低溫可回銲材料,例如無鉛或含鉛的焊料。使用合適的植求製程,形成外部電連接物172。在一些實施例中,可省略墊168,以及可在金屬化圖案156上直接形成穿過開口的外部電連接物172,該開口係穿過介電層162。
在圖23中,進行載體基板脫層,將載體基板100從背面重佈結構114脫離(脫層),例如從介電層104脫離。根據一些實施例,脫層包含將光投射在脫膜層102上,該光為雷射光或UV光,因而脫膜層102在光熱之下分解,並且可移除載體基板100。而後,翻轉結構,並且將其放置在膠帶174上。形成穿過介電層104的開口,以暴露金屬圖案106的部分。例如,可使用雷射鑽孔、蝕刻、或類似方法,形成開口。
雖然未特別說明,然而該技藝中具有通常技術者可理解在載體基板100的其他區域中亦同時形成圖9至23中所形成的結構,該載體基板100可為晶圓。據此,進行單粒化製程,例如藉由鋸,將單一封裝180從與封裝180同時形成的其他封裝單粒化而得。
如圖24至27所示,封裝180可被併入各種封裝上晶片(CoP)與封裝上封裝(PoP)結構中。圖24至27係範例結構,封裝180可被併入任何封裝結構中。在圖24至27中,封裝180係附接至基板182。外部電連接物172可電性與機械式耦合至基板182上的墊184。例如,基板182可為印刷電路板(PCB)或類似物。
在圖24中,積體電路晶粒300(或晶片)係藉由外部連接物302而附接至封裝180的背面重佈結構114。積體電路晶粒300可為任何積體電路晶粒,例如邏輯晶粒、類比晶粒、記憶體晶粒、或類似物。藉由附接至穿過開口的金屬化圖案106的外部電連接物302,積體電路晶粒300電性且機械式耦合至背面重佈結構114,該開口係穿過介電層104。外部電連接物302可包含低溫可回銲材料,例如焊料,例如無鉛銲料,在其他實施例中,該外部電連接物302可包含金屬柱。在一些實施例中,外部電連接物302係受控的塌陷晶片連接(C4)凸塊、微凸塊、或類似物。在一些實施例中,外部電連接物302可回銲以附接積體電路晶粒300至封裝180。亦可在積體電路晶粒300與封裝180的
背面重佈結構114之間以及外部電連接物302附近,使用底膠填充材料304。
在圖25中,封裝組件310係藉由外部電連接物312而附接至封裝180的背面重佈結構114。在此範例中,封裝組件310包含積體電路晶粒覆晶附接至插入物。積體電路晶粒可為任何積體電路晶粒,例如邏輯晶粒、類比晶粒、記憶體晶粒、或類似物。藉由附接至穿過開口的金屬化圖案106的外部電連接物312,封裝組件310電性且機械式耦合至背面重佈結構114,該開口係穿過介電層104。外部電連接物312可包含低溫可回銲材料,例如焊料,例如無鉛銲料,在其他實施例中,該外部電連接物312可包含金屬柱。在一些實施例中,外部電連接物312為C4凸塊、微凸塊、或類似物。在一些實施例中,外部電連接物312可回銲以附接封裝組件310至封裝180。
在圖26中,藉由外部電連接物322,封裝320係附接至封裝180的背面重佈結構114。封裝320包括基板、在基板上的兩個堆疊的積體電路晶粒、打線接合將積體電路晶粒耦合至基板,以及封裝堆疊的積體電路晶粒與打線接合的封裝物。在一範例中,封裝320的積體電路晶粒係記憶體晶粒,例如動態隨機存取記憶體(DRAM)晶粒。藉由附接至穿過開口的金屬化圖案106的外部電連接物322,封裝320係電性且機械式耦合至背面重佈結構114,該開口係穿過介電層104。在一些實施例中,外部電連接物322可包含低溫可回銲材料,例如焊料,例如無鉛銲料,在其他實施例中,該外部電連接物322可包含金屬柱。在一些實施例中,外部電連接物322為C4凸塊、微凸塊、或類似物。在一些實施例中,外部電連接物322可回銲以附接封裝組件320至金屬化圖案106。例如,經由封裝320的打線接合與基板、外部電連接物322、背面重佈結構114、貫穿通路116以及前面重佈結構166,封裝320的積體電路晶粒係電性且通訊耦合至積體電路晶粒
119。
在圖27中,封裝330係藉由外部電連接物332而附接至封裝180的背面重佈結構114。封裝330可類似封裝180,並且可藉由類似的製程而形成。例如,相較於封裝180,通常,封裝330省略背面重佈結構與貫穿通路。在一範例中,封裝330的積體電路晶粒可為邏輯晶粒、類比晶粒、記憶體晶粒,例如動態隨機存取記憶體(DRAM)晶粒、或類似物。藉由附接至穿過開口的金屬化圖案106的外部電連接物332,封裝330電性且機械式耦合至背面重佈結構114,該開口係穿過介電層104。在一些實施例中,外度電連接物332可包含低溫可回銲材料,例如焊料,例如無鉛銲料,在其他實施例中,該外部電連接物332可包含金屬柱。在一些實施例中,外部電連接物332為C4凸塊、微凸塊、或類似物。在一些實施例中,外部電連接物332可回銲以附接封裝330至金屬化圖案106。例如,經由封裝330的前面重佈結構、外部電連接物332、背面重佈結構114、貫穿通路116以及前面重佈結構166,封裝330的積體電路晶粒係電性且通訊耦合至積體電路晶粒119。
本揭露的實施例可達到一些優點。例如,藉由在金屬化圖案化上以及金屬化圖案與介電層之間提供金屬氧化物層狀結構,該介電層例如光敏感介電材料,可改良附著。此改良的附著可減少金屬化圖案與介電層之間的脫層風險。
本揭露的實施例係提供結構。該結構包含至少從側向被封裝物封裝的積體電路晶粒,以及積體電路晶粒與封裝物上的重佈結構。重佈結構係電耦合至積體電路晶粒。重佈結構係包含在至少封裝物上的第一介電層、在第一介電層上的金屬化圖案、在金屬化圖案上的金屬氧化物層狀結構、以及在第一介電層與金屬化圖案上的第二介電層。金屬氧化物層狀結構包含金屬氧化物層,其金屬原子與氧原
子的比例係實質上為1:1,以及金屬氧化物層狀結構的厚度係至少50Å。第二介電層係光敏感材料。金屬氧化物層狀結構係位於金屬化圖案與第二介電層之間。
本揭露的另一實施例係提供結構。該結構包括積體電路晶粒、至少從側向封裝該積體電路晶粒的封裝物、在封裝物上與積體電路晶粒的主動側上的第一介電層、第一介電層上的金屬化圖案、金屬化圖案上的黏著層、以及第一介電層與黏著層上的第二介電層。金屬化圖案係電耦合至積體電路晶粒的主動側。黏著層包括金屬氧化物層,其具有金屬原子與氧原子的比例係實質上為1:1,以及黏著層的厚度係至少50Å。第二介電層係光敏感材料。
本揭露的另一實施例係提供方法。該方法包括以封裝物封裝積體電路晶粒;在封裝物與積體電路晶粒上方形成介電層;在介電層上方形成金屬化圖案;用含氧電漿處理金屬化圖案,該處理在金屬化圖案上方形成具有金屬原子與氧原子之比例實質上為1:1的金屬氧化物層,金屬氧化物層的厚度係至少50Å;以及在金屬氧化物層上方形成光敏感材料。
前述內容概述一些實施方式的特徵,因而熟知此技藝之人士可更加理解本揭露之各方面。熟知此技藝之人士應理解可輕易使用本揭露作為基礎,用於設計或修飾其他製程與結構而實現與本申請案所述之實施例具有相同目的與/或達到相同優點。熟知此技藝之人士亦應理解此均等架構並不脫離本揭露揭示內容的精神與範圍,並且熟知此技藝之人士可進行各種變化、取代與替換,而不脫離本揭露之精神與範圍。
104‧‧‧介電層
106‧‧‧金屬化圖案
114‧‧‧背面重佈結構
144‧‧‧金屬氧化物層狀結構的部分
166‧‧‧前面重佈結構
172‧‧‧外部電連接物
174‧‧‧膠帶
180‧‧‧封裝
182‧‧‧基板
184‧‧‧墊
300‧‧‧積體電路晶粒
302‧‧‧外部電連接物
304‧‧‧底膠填充材料
Claims (10)
- 一種結構,其包括:積體電路晶粒,其係被封裝物至少從側向封裝;以及重佈結構,其係位於該積體電路晶粒與該封裝物上,該重佈結構係電耦合至該積體電路晶粒,該重佈結構包括:第一介電層,其係至少位於該封裝物上,金屬化圖案,其係位於該第一介電層上,金屬氧化物層狀結構,其係位於該金屬化圖案上,該金屬氧化物層狀結構係包括金屬氧化物層,該金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,該金屬氧化物層狀結構的厚度係至少50Å,以及第二介電層,其係位於該第一介電層與該金屬化圖案上,該第二介電層係光敏感材料,該金屬氧化物層狀結構係位於該金屬化圖案與該第二介電層之間。
- 如申請專利範圍第1項所述之結構,其中該金屬氧化物層狀結構主要係由該金屬氧化物層組成,該金屬氧化物層係直接與該金屬化圖案相鄰。
- 如申請專利範圍第1項所述之結構,其中該金屬氧化物層狀結構進一步包括原生氧化物層,該原生氧化物層係直接與該金屬化圖案相鄰,該金屬氧化物層係直接與該原生氧化物層相鄰。
- 如申請專利範圍第1項所述之結構,其中該金屬氧化物層狀結構進一步包括原生氧化物層,該金屬氧化物層係直接與該金屬化圖案相鄰,該原生氧化物層係直接與該金屬氧化物層相鄰。
- 如申請專利範圍第1項所述之結構,其中該厚度係不大於200Å。
- 如申請專利範圍第1項所述之結構,其中該厚度係不大於100Å。
- 如申請專利範圍第1項所述之結構,其中該金屬氧化物層的厚度範圍係從50Å至200Å。
- 如申請專利範圍第1項所述之結構,其中該金屬氧化物層的厚度範圍係從50Å至100Å。
- 一種結構,其包括:積體電路晶粒;封裝物,其至少從側向封裝該積體電路晶粒;第一介電層,其係位於該封裝物與該積體電路晶粒的主動側上;金屬化圖案,其係位於該第一介電層上,該金屬化圖案係電耦合至該積體電路晶粒的該主動側;黏著層,其係位於該金屬化圖案上,該黏著層係包括金屬氧化物層,該金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,該黏著層的厚度係至少50Å;以及第二介電層,其係位於該第一介電層與該黏著層上,該第二介電層係光敏感材料。
- 一種方法,其包括:以封裝物封裝積體電路晶粒;在該封裝物與該積體電路晶粒上方,形成介電層;在該介電層上方,形成金屬化圖案;以含氧電漿處理該金屬化圖案,該處理係在該金屬化圖案上方形成金屬氧化物層,該金屬氧化物層具有金屬原子與氧原子之比例實質上為1:1,該金屬氧化物層的厚度係至少50Å;以及在該金屬氧化物層上方形成光敏感材料。
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