TW201702002A - Polishing device capable of reducing the use amount of the polishing slurry and cyclically using the polishing slurry effectively - Google Patents

Polishing device capable of reducing the use amount of the polishing slurry and cyclically using the polishing slurry effectively Download PDF

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TW201702002A
TW201702002A TW105110904A TW105110904A TW201702002A TW 201702002 A TW201702002 A TW 201702002A TW 105110904 A TW105110904 A TW 105110904A TW 105110904 A TW105110904 A TW 105110904A TW 201702002 A TW201702002 A TW 201702002A
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polishing
polishing slurry
slurry
wafer
unit
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TW105110904A
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TWI665054B (en
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Satoshi Yamanaka
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Disco Corp
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

This invention provides a polishing device capable of reducing the use amount of the polishing slurry and cyclically using the polishing slurry effectively. The solution is a polishing device having a polishing slurry circulation unit accumulating the polishing slurry on the lower side of the chuck table and cyclically providing the polishing slurry to the polishing surface of the polishing pad. Since the polishing slurry circulation unit has a concave tank part accumulating polishing slurry around the chuck table, and a gas supply unit having a gas jetting port for jetting gas toward the polishing surface in the polishing slurry accumulated in the tank part, the polishing slurry can be accumulated in the tank part, also, the gas supply unit make gas jetted from the gas jetting port to jet the polishing slurry accumulated in the tank part upwardly, so as to cyclically supply the polishing slurry to the polishing surface of the polishing pad. Accordingly, this invention can reduce the use amount of the polishing slurry and cyclically utilize the polishing slurry effectively.

Description

研磨裝置 Grinding device 發明領域 Field of invention

本發明是有關於一種用以一邊朝研磨墊的研磨面供給研磨漿料一邊研磨晶圓的研磨裝置。 The present invention relates to a polishing apparatus for polishing a wafer while supplying a polishing slurry to a polishing surface of a polishing pad.

發明背景 Background of the invention

在將晶圓等之被加工物磨削而薄化時，會使晶圓的抗折強度降低，所以會藉由研磨晶圓之被加工面來提升抗折強度。作為研磨晶圓的裝置，所使用的是可以藉由例如被稱為CMP(化學機械研磨(Chemical Mechanical Polishing))的化學上機械上的研磨法來研磨晶圓的研磨裝置。研磨裝置一般形成有將研磨墊配置在下側，並將保持晶圓的保持部配置在上側之構成，並且在對研磨墊之研磨面供給研磨漿料(研磨液)時將晶圓邊相對於研磨墊壓抵邊研磨。已有一種在只進行研磨的專用裝置上，以例如桶體來回收已在研磨中被使用的研磨漿料，且使用循環泵浦將研磨漿料循環利用之方案被提出(參照例如下述的專利文獻1)。 When the workpiece such as a wafer is ground and thinned, the bending strength of the wafer is lowered. Therefore, the bending strength of the wafer is increased by polishing the processed surface of the wafer. As a device for polishing a wafer, a polishing device which can polish a wafer by, for example, a chemical mechanical polishing method called CMP (Chemical Mechanical Polishing) is used. The polishing apparatus generally has a configuration in which a polishing pad is disposed on the lower side and a holding portion for holding the wafer is disposed on the upper side, and the wafer side is opposed to the polishing when the polishing slurry (polishing liquid) is supplied to the polishing surface of the polishing pad. The pad is pressed against the edge to grind. There has been proposed a method of recycling a polishing slurry which has been used in grinding by, for example, a barrel on a dedicated apparatus for performing only grinding, and recycling the polishing slurry by using a circulation pump (refer to, for example, the following Patent Document 1).

又，也有一種可在單一個裝置上實施磨削及研磨之加工裝置之方案被提出，此加工裝置是將保持晶圓的工 作夾台配置在下側，並將磨削單元及研磨單元配置在上方側而被構成(參照例如下述的專利文獻2)。在將研削後之晶圓予以研磨時，會在朝晶圓供給研磨漿料時將研磨墊相對於晶圓一邊壓抵一邊進行研磨。 Moreover, there is also a proposal for a processing apparatus that can perform grinding and grinding on a single device, which is a worker who will hold the wafer. The chucking stage is disposed on the lower side, and the grinding unit and the polishing unit are disposed on the upper side (see, for example, Patent Document 2 below). When the ground wafer is polished, the polishing pad is ground while being pressed against the wafer while the polishing slurry is being supplied to the wafer.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1：日本專利特開第3384530號公號 Patent Document 1: Japanese Patent Laid-Open No. 3384530

專利文獻2：日本專利特許第5406676號公報 Patent Document 2: Japanese Patent No. 5406676

發明概要 Summary of invention

然而，在如上述之可以將研磨漿料循環利用的研磨裝置中，因為在研磨晶圓時是將研磨漿料持續供給於研磨墊之研磨面，因此會導致研磨漿料的使用量變多，而不符經濟效益。又，以上述之加工裝置研磨晶圓的時候，因為會使供給於晶圓的研磨漿料從保持晶圓之工作夾台的周緣側落下，而與磨削時的磨削廢液混合，所以會使研磨漿料之再利用變得困難。為了再利用此研磨漿料，需要做成不會使研磨漿料與磨削廢液混合之裝置構成，但是要做成像這樣的構成是困難的。進一步地，因為要從已摻混有研磨漿料之磨削廢液中只回收研磨漿料也是很難的，所以會將可再利用之研磨漿料也與磨削廢液一起廢棄，而白白浪費大量的研磨漿料。 However, in the polishing apparatus which can recycle the polishing slurry as described above, since the polishing slurry is continuously supplied to the polishing surface of the polishing pad when the wafer is polished, the amount of the polishing slurry used is increased, and Not in line with economic benefits. Further, when the wafer is polished by the above-described processing apparatus, the polishing slurry supplied to the wafer is dropped from the peripheral side of the working chuck of the holding wafer, and is mixed with the grinding waste liquid during grinding. Reuse of the polishing slurry becomes difficult. In order to reuse the polishing slurry, it is necessary to form a device that does not mix the polishing slurry with the grinding waste liquid, but it is difficult to form such a structure. Further, since it is difficult to recover only the polishing slurry from the grinding waste liquid to which the polishing slurry has been blended, the reusable polishing slurry is also discarded together with the grinding waste liquid, and is white. A large amount of abrasive slurry is wasted.

本發明是有鑒於上述之情事而作成的，其目的為 做成能夠抑制研磨漿料的使用量，並且有效率地將研磨漿料循環利用。 The present invention has been made in view of the above circumstances, and its purpose is It is possible to suppress the amount of use of the polishing slurry and to efficiently recycle the polishing slurry.

本發明為具備下列的研磨裝置：保持晶圓的工作夾台、具有將研磨該工作夾台所保持之晶圓的研磨墊裝設成可旋轉的主軸且以該研磨墊之研磨面研磨晶圓之研磨單元、將研磨漿料供給於該研磨墊之該研磨面及該工作夾台所保持之晶圓的上表面之研磨漿料供給單元、和用以將該研磨單元相對於該工作夾台所保持之晶圓的上表面朝接近及遠離方向研磨進給之研磨進給單元，並具備有在該工作夾台之下側蓄積該研磨漿料而將該研磨漿料循環供給於該研磨面之研磨漿料循環單元，該研磨漿料循環單元具備有：凹形之桶部，該桶部是藉由側壁、底板與內側壁所構成，該側壁會圍繞使該研磨墊之該研磨面接觸於該工作夾台所保持之晶圓之研磨位置中的該研磨墊和該工作夾台，該底板是連接於該側壁之下部且在中央具有使該工作夾台露出的開口，該內側壁是在該開口之內周緣豎立設置；及氣體供給單元，在蓄積於該桶部之研磨漿料之中具有朝向該研磨墊之該研磨面噴出氣體的氣體噴出口，從該氣體噴出口噴出之氣體將蓄積於該桶部之該研磨漿料向上噴出以循環供給於該研磨墊之該研磨面。 The present invention is provided with a polishing apparatus that holds a working chuck of a wafer, has a polishing pad that polishes a wafer held by the working chuck, and rotates the wafer with the polishing surface of the polishing pad. a polishing unit, a polishing slurry supply unit that supplies the polishing slurry to the polishing surface of the polishing pad and an upper surface of the wafer held by the working chuck, and a polishing slurry unit for holding the polishing unit relative to the working clamping table a polishing feed unit that grinds and feeds the upper surface of the wafer toward the approaching and moving direction, and a slurry that accumulates the polishing slurry on the lower side of the working chuck to circulate the polishing slurry to the polishing surface a material circulation unit, the polishing slurry circulation unit is provided with: a concave barrel portion, the barrel portion is formed by a side wall, a bottom plate and an inner side wall, and the side wall surrounds the grinding surface of the polishing pad to contact the work The polishing pad and the working clamping table in the grinding position of the wafer held by the clamping table, the bottom plate is connected to the lower portion of the side wall and has an opening at the center for exposing the working clamping table, wherein the inner side wall is The gas supply unit has a gas discharge port that discharges gas toward the polishing surface of the polishing pad, and a gas that is ejected from the gas ejection port accumulates in the polishing slurry accumulated in the barrel portion. The polishing slurry in the barrel portion is ejected upward to be cyclically supplied to the polishing surface of the polishing pad.

本發明的研磨裝置，因為具備有將研磨漿料供給於研磨墊及工作夾台所保持之晶圓之研磨漿料供給單元、 和在工作夾台之下側蓄積研磨漿料而將研磨漿料循環供給於研磨墊之研磨面的研磨漿料循環單元，且研磨漿料循環單元具備有在工作夾台之周圍蓄積研磨漿料的凹部形狀之桶部、和在蓄積於該桶部之研磨漿料之中具有朝向研磨墊之研磨面噴出氣體的氣體噴出口之氣體供給單元，所以即使藉由研磨漿料供給單元將研磨漿料供給於研磨墊之研磨面與晶圓之上表面而使研磨漿料朝旋轉之工作夾台及研磨墊的周圍飛散，也能將研磨漿料蓄積於桶部。 The polishing apparatus of the present invention includes a polishing slurry supply unit that supplies a polishing slurry to a polishing pad and a wafer held by the working chuck, And a polishing slurry circulation unit that accumulates the polishing slurry on the lower side of the working chuck to supply the polishing slurry to the polishing surface of the polishing pad, and the polishing slurry circulation unit is provided with the polishing slurry accumulated around the working clamping table a barrel portion having a recessed shape and a gas supply unit having a gas discharge port for discharging a gas toward the polishing surface of the polishing pad among the polishing slurry accumulated in the barrel portion, so that the slurry is evenly polished by the slurry supply unit The material is supplied to the polishing surface of the polishing pad and the upper surface of the wafer to scatter the polishing slurry around the rotating work chuck and the polishing pad, and the polishing slurry can be accumulated in the barrel portion.

並且，因為氣體供給單元使氣體從氣體噴出口噴出而將蓄積於桶部的研磨漿料向上噴出，所以能夠將研磨漿料循環供給於研磨墊之研磨面。據此，能夠減少研磨漿料之使用量，並且有效率地將研磨漿料循環利用。 Further, since the gas supply unit ejects the gas from the gas ejection port and ejects the polishing slurry accumulated in the tub portion upward, the polishing slurry can be circulated and supplied to the polishing surface of the polishing pad. According to this, it is possible to reduce the amount of use of the polishing slurry and to efficiently recycle the polishing slurry.

1‧‧‧研磨裝置 1‧‧‧ grinding device

2‧‧‧裝置基座 2‧‧‧ device base

3‧‧‧工作夾台 3‧‧‧Working table

3a‧‧‧保持面 3a‧‧‧ Keep face

4、13、23、33‧‧‧馬達 4, 13, 23, 33‧‧ ‧ motor

5‧‧‧旋轉軸 5‧‧‧Rotary axis

6‧‧‧基台 6‧‧‧Abutment

7‧‧‧柱體 7‧‧‧Cylinder

8‧‧‧加工位置感測器 8‧‧‧Processing position sensor

9‧‧‧位置決定部 9‧‧‧Location Determination Department

10‧‧‧Y軸方向進給單元 10‧‧‧Y-axis feed unit

11、32‧‧‧滾珠螺桿 11, 32‧‧‧ ball screw

12‧‧‧軸承部 12‧‧‧ Bearing Department

14、34‧‧‧導軌 14, 34‧‧‧ rails

15‧‧‧移動台 15‧‧‧Mobile Station

20‧‧‧研磨單元 20‧‧‧grinding unit

21‧‧‧主軸 21‧‧‧ Spindle

22‧‧‧保持架 22‧‧‧Carry

24‧‧‧安裝座 24‧‧‧ Mounting

25‧‧‧研磨墊 25‧‧‧ polishing pad

25a‧‧‧研磨面 25a‧‧‧Grinding surface

26‧‧‧貫通孔 26‧‧‧through holes

30‧‧‧研磨進給單元 30‧‧‧ Grinding feed unit

31‧‧‧固定部 31‧‧‧ Fixed Department

35‧‧‧升降板 35‧‧‧ lifting plate

40‧‧‧研磨漿料供給單元 40‧‧‧grinding slurry supply unit

41‧‧‧研磨漿料供給管 41‧‧‧ polishing slurry supply pipe

42‧‧‧供給口 42‧‧‧ supply port

43、58、61、78‧‧‧閥門 43, 58, 61, 78‧‧‧ valves

44‧‧‧研磨漿料供給源 44‧‧‧ Grinding slurry supply source

45‧‧‧研磨漿料 45‧‧‧ polishing slurry

45a‧‧‧蓄積液 45a‧‧‧ accumulation fluid

50、70‧‧‧研磨漿料循環單元 50, 70‧‧‧ grinding slurry circulation unit

51、71‧‧‧桶部 51, 71‧‧‧ barrels

52‧‧‧側壁 52‧‧‧ side wall

53、73‧‧‧底板 53, 73‧‧‧ bottom plate

54、74‧‧‧內側壁 54, 74‧‧‧ inner side wall

55、76‧‧‧氣體供給單元 55, 76‧‧‧ gas supply unit

56、77‧‧‧氣體噴出口 56, 77‧‧‧ gas outlet

57、79‧‧‧氣體供給源 57, 79‧‧‧ gas supply

60‧‧‧吸引源 60‧‧‧Attraction source

72‧‧‧蛇腹部 72‧‧‧ snake belly

75‧‧‧升降氣缸 75‧‧‧lifting cylinder

750‧‧‧氣缸 750‧‧‧ cylinder

751‧‧‧支撐部 751‧‧‧Support

752‧‧‧活塞 752‧‧‧Piston

W‧‧‧晶圓 W‧‧‧ wafer

Wa‧‧‧上表面 Wa‧‧‧Upper surface

Wb‧‧‧下表面 Wb‧‧‧ lower surface

A‧‧‧箭頭 A‧‧‧ arrow

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

圖1是顯示研磨裝置之構成的立體圖。 Fig. 1 is a perspective view showing the configuration of a polishing apparatus.

圖2是顯示研磨單元、工作夾台及研磨漿料循環單元之構成的剖面圖。 2 is a cross-sectional view showing the configuration of a polishing unit, a work chuck, and a polishing slurry circulation unit.

圖3是顯示一邊使用研磨漿料循環單元將研磨漿料循環供給至研磨墊一邊研磨晶圓之狀態的剖面圖。 3 is a cross-sectional view showing a state in which a polishing slurry is circulated and supplied to a polishing pad using a polishing slurry circulation unit.

圖4是顯示研磨漿料循環單元之變形例的構成的剖面圖。 4 is a cross-sectional view showing a configuration of a modification of the polishing slurry circulation unit.

圖5是顯示一邊使用研磨漿料循環單元之變形例將研磨漿料循環供給至研磨墊一邊研磨晶圓之狀態的剖面圖。 5 is a cross-sectional view showing a state in which a polishing slurry is circulated and supplied to a polishing pad while using a modified example of a polishing slurry circulation unit.

用以實施發明之形態 Form for implementing the invention

圖1所示之研磨裝置1是藉由CMP將晶圓予以研磨之研磨裝置之一例。研磨裝置1具有在Y軸方向上延伸的裝置基座2，在裝置基座2之上具備有用以保持晶圓且可旋轉的工作夾台3。工作夾台3的上表面為用以保持晶圓的保持面3a，在保持面3a上連接有圖未示的吸引源。在工作夾台3的下端連結有與圖2所示之馬達4連接之旋轉軸5。藉由馬達4使旋轉軸5旋轉，就能使工作夾台3以預定之旋轉速度旋轉。 The polishing apparatus 1 shown in Fig. 1 is an example of a polishing apparatus for polishing a wafer by CMP. The polishing apparatus 1 has a device base 2 extending in the Y-axis direction, and a working chuck 3 for holding a wafer and being rotatable is provided on the device base 2. The upper surface of the work chuck 3 is a holding surface 3a for holding the wafer, and a suction source (not shown) is connected to the holding surface 3a. A rotary shaft 5 connected to the motor 4 shown in Fig. 2 is coupled to the lower end of the work chuck 3. By rotating the rotary shaft 5 by the motor 4, the work chuck 3 can be rotated at a predetermined rotational speed.

在裝置基座2的內部配置有在Y軸方向上延伸的基台6。在基台6之上配置有使工作夾台3在Y軸方向上移動的Y軸方向進給單元10。Y軸方向進給單元10具備有：在Y軸方向上延伸的滾珠螺桿11、將滾珠螺桿11之一端以軸承支撐成可轉動的軸承部12、連接於滾珠螺桿11之另一端的馬達13、與滾珠螺桿11平行地延伸的一對導軌14、和從下方支撐工作夾台3之移動台15。在移動台15的下部可供一對導軌14滑接且形成於移動台15之中央部的螺帽中螺合有滾珠螺桿11。藉由馬達13使滾珠螺桿11轉動，就能使工作夾台3與移動台15一起在Y軸方向上移動。 A base 6 extending in the Y-axis direction is disposed inside the apparatus base 2. A Y-axis direction feeding unit 10 that moves the work chuck 3 in the Y-axis direction is disposed on the base 6 . The Y-axis direction feed unit 10 includes a ball screw 11 extending in the Y-axis direction, a bearing portion 12 that supports one end of the ball screw 11 by a bearing, and a motor 13 connected to the other end of the ball screw 11 A pair of guide rails 14 extending in parallel with the ball screw 11 and a moving table 15 supporting the work chuck 3 from below. A ball screw 11 is screwed into a nut in which a pair of guide rails 14 are slidably disposed at a lower portion of the moving table 15 and formed in a central portion of the moving table 15. By rotating the ball screw 11 by the motor 13, the work chuck 3 can be moved together with the moving table 15 in the Y-axis direction.

在裝置基座2的X軸方向後部豎立設置有柱體7。在柱體7的前方具備有：研磨工作夾台3所保持之晶圓的研磨單元20、和將研磨單元20相對於工作夾台3所保持之晶圓之上表面朝接近及遠離的方向研磨進給之研磨進給單元30。 A column 7 is erected at the rear of the apparatus base 2 in the X-axis direction. The polishing unit 20 for polishing the wafer held by the work chuck 3 is provided in front of the cylinder 7, and the upper surface of the wafer held by the polishing unit 20 with respect to the work chuck 3 is ground in the direction of approaching and moving away. Feed the grinding feed unit 30.

研磨單元20具備有：具有Z軸方向之軸心的主軸 21、保持將主軸21圍繞並支撐成可旋轉的外殼之保持架(holder)22、連接於主軸21之一端的馬達23、和透過安裝座24而可拆裝地裝設於主軸21之下端的研磨墊25。研磨墊25的下表面為用以研磨晶圓的研磨面25a。在如圖2所示之主軸21的旋轉中心上形成有沿著軸方向延伸的貫通孔26。 The polishing unit 20 is provided with a spindle having an axis of the Z-axis direction 21. A holder 22 for holding and supporting the main shaft 21 as a rotatable outer casing, a motor 23 coupled to one end of the main shaft 21, and detachably mounted to the lower end of the main shaft 21 through the mounting seat 24. Polishing pad 25. The lower surface of the polishing pad 25 is a polishing surface 25a for polishing the wafer. A through hole 26 extending in the axial direction is formed at the center of rotation of the main shaft 21 as shown in FIG.

如圖1所示的研磨進給單元30具備有：固定於柱體7的固定部31、在Z軸方向上延伸的滾珠螺桿32、連接於滾珠螺桿32之一端的馬達33、與滾珠螺桿32平行地延伸的一對導軌34、及將一方之面連結於研磨單元20之升降板35。在升降板35的另一方之面上是供一對導軌34滑接，且在形成於升降板35之中央部的螺帽中螺合有滾珠螺桿32。藉由馬達33驅動滾珠螺桿32，就能使研磨單元20和升降板35一起在Z軸方向上升降。 The polishing feed unit 30 shown in FIG. 1 includes a fixing portion 31 fixed to the column 7, a ball screw 32 extending in the Z-axis direction, a motor 33 connected to one end of the ball screw 32, and a ball screw 32. A pair of guide rails 34 extending in parallel and one surface are coupled to the lift plate 35 of the polishing unit 20. On the other surface of the lift plate 35, a pair of guide rails 34 are slidably connected, and a ball screw 32 is screwed into a nut formed at a central portion of the lift plate 35. By driving the ball screw 32 by the motor 33, the polishing unit 20 and the lift plate 35 can be lifted and lowered together in the Z-axis direction.

在基台2的上表面上且在Y軸方向進給單元10的附近配置有：檢測能夠藉由研磨單元20之研磨墊25對晶圓進行研磨的工作夾台3之加工位置的加工位置感測器8。在移動台15的側面配置有供加工位置感測器8辨識之位置決定部9。該加工位置感測器8檢測出位置決定部9時的工作夾台3之位置即成為加工位置。所謂的加工位置意指：使保持在工作夾台3之晶圓的上表面整個區域至少與研磨墊25之研磨面25a之中央區域相重疊之位置。 On the upper surface of the base 2 and in the vicinity of the Y-axis direction feeding unit 10, a processing position sense is detected in which the machining position of the work chuck 3 capable of grinding the wafer by the polishing pad 25 of the polishing unit 20 is disposed. Detector 8. A position determining unit 9 for recognizing the position sensor 8 is disposed on the side surface of the moving table 15. The position of the work chuck 3 when the machining position sensor 8 detects the position determining unit 9 is the machining position. The so-called processing position means that the entire area of the upper surface of the wafer held by the working chuck 3 overlaps at least the central area of the polishing surface 25a of the polishing pad 25.

研磨裝置1具備有：朝向連接於研磨單元20之研磨墊25及工作夾台3所保持之晶圓供給研磨漿料的研磨漿料供給單元40、及在工作夾台3之下方的位置蓄積研磨漿料 而朝研磨墊25的研磨面25a循環供給研磨漿料之研磨漿料循環供給單元50。 The polishing apparatus 1 includes a polishing slurry supply unit 40 that supplies polishing slurry to a polishing pad 25 connected to the polishing unit 20 and a wafer held by the working chuck 3, and a polishing slurry at a position below the working chuck 3 Slurry On the other hand, the polishing slurry circulation supply unit 50 that supplies the polishing slurry to the polishing surface 25a of the polishing pad 25 is circulated.

如圖2所示，研磨漿料供給單元40具備有：插入於主軸21之貫通孔26的研磨漿料供給管41、和透過閥門43而被連接到研磨漿料供給管41之上端的研磨漿料供給源44。在研磨漿料供給管41之下端形成有用以使研磨漿料噴出的供給口42。並且，藉由開啟閥門43，就能從研磨漿料供給管41之供給口42朝下方噴出預定供給量的研磨漿料。 As shown in FIG. 2, the polishing slurry supply unit 40 includes a polishing slurry supply pipe 41 that is inserted into the through hole 26 of the spindle 21, and a polishing slurry that is connected to the upper end of the polishing slurry supply pipe 41 through the valve 43. Feed source 44. A supply port 42 for discharging the polishing slurry is formed at the lower end of the polishing slurry supply pipe 41. Further, by opening the valve 43, the polishing slurry of a predetermined supply amount can be discharged downward from the supply port 42 of the polishing slurry supply pipe 41.

研磨漿料循環單元50具備有：圍繞工作夾台3之周圍而蓄積研磨漿料之凹形的桶部51、和朝向研磨墊25之研磨面25a噴出氣體的氣體供給單元55。桶部51能夠與工作夾台3一起在Y軸方向上移動，且是藉由在以研磨單元20研磨晶圓之研磨位置上圍繞研磨墊25及工作夾台3的側壁52、連接於側壁52之下部且在中央具有使工作夾台3露出的開口之底板53、和從該開口之內周緣豎立設置的內側壁54所構成。所謂的研磨位置是指使研磨墊25之研磨面25a接觸到工作夾台3所保持之晶圓的上表面之狀態中的研磨單元20之高度位置。側壁52會延伸至比研磨單元20位於研磨位置時的研磨墊25之位置還要高的位置，而能夠在研磨加工中遮蔽研磨墊25及工作夾台3的周圍，且防止研磨漿料飛散之情形。 The polishing slurry circulation unit 50 includes a concave barrel portion 51 that accumulates polishing slurry around the periphery of the working chuck 3, and a gas supply unit 55 that discharges gas toward the polishing surface 25a of the polishing pad 25. The barrel portion 51 is movable in the Y-axis direction together with the work chuck 3, and is connected to the side wall 52 by surrounding the polishing pad 25 and the side wall 52 of the work chuck 3 at the grinding position where the wafer is polished by the polishing unit 20. The lower portion has a bottom plate 53 having an opening for exposing the work table 3 at the center, and an inner side wall 54 which is erected from the inner periphery of the opening. The so-called polishing position refers to the height position of the polishing unit 20 in a state where the polishing surface 25a of the polishing pad 25 is brought into contact with the upper surface of the wafer held by the working chuck 3. The side wall 52 extends to a position higher than the position of the polishing pad 25 when the polishing unit 20 is in the polishing position, and can shield the polishing pad 25 and the periphery of the working table 3 during the polishing process, and prevents the polishing slurry from scattering. situation.

氣體供給單元55是連接於構成桶部51之底板53的正下方，且具備有：形成在蓄積研磨漿料之底板53的氣體噴出口56、和透過閥門58而被連接到氣體噴出口56的氣 體供給源57。當在研磨漿料已蓄積於桶部51之狀態時開啟閥門58時，就能從氣體噴出口56噴出預定流量的氣體，並將蓄積於桶部51之研磨漿料向上噴出。再者，氣體噴出口56的大小是例如直徑8~10mm左右。 The gas supply unit 55 is connected directly to the bottom plate 53 constituting the tub portion 51, and includes a gas discharge port 56 formed in the bottom plate 53 in which the polishing slurry is accumulated, and a gas discharge port 56 connected to the gas discharge port 56 through the valve 58. gas Body supply source 57. When the valve 58 is opened while the polishing slurry has accumulated in the tub portion 51, a gas of a predetermined flow rate can be ejected from the gas ejection port 56, and the polishing slurry accumulated in the tub portion 51 can be ejected upward. Further, the size of the gas discharge port 56 is, for example, about 8 to 10 mm in diameter.

較理想的是將氣體噴出口56形成在接近工作夾台3的位置。藉此，使循環供給於旋轉之研磨墊25的研磨面25a的研磨漿料變得容易附著於被保持於工作夾台3上的晶圓。 It is desirable to form the gas discharge port 56 at a position close to the work chuck 3. Thereby, the polishing slurry which is circulated and supplied to the polishing surface 25a of the polishing pad 25 is easily adhered to the wafer held on the work chuck 3.

在氣體噴出口56上透過閥門61而連接有吸引源60。藉由關閉閥門58並且開啟閥門61，可以使吸引源60的吸引力作用在氣體噴出口56上，而將蓄積於桶部51的研磨漿料吸引並往裝置外部排出。 A suction source 60 is connected to the gas discharge port 56 through the valve 61. By closing the valve 58 and opening the valve 61, the suction force of the suction source 60 can be applied to the gas discharge port 56, and the polishing slurry accumulated in the tub portion 51 can be sucked and discharged to the outside of the device.

接著，說明研磨裝置1的動作例。圖2所示的晶圓W為被加工物之一例，被研磨墊25研磨的上表面Wa則成為被研磨面。另一方面，位於與上表面Wa相反側的面則成為被吸引保持在工作夾台3之保持面3a上的下表面Wb。 Next, an operation example of the polishing apparatus 1 will be described. The wafer W shown in FIG. 2 is an example of a workpiece, and the upper surface Wa polished by the polishing pad 25 serves as a surface to be polished. On the other hand, the surface on the side opposite to the upper surface Wa is the lower surface Wb that is attracted and held by the holding surface 3a of the work chuck 3.

將晶圓W載置在工作夾台3之保持面3a上之後，藉由吸引源之吸引力將晶圓W吸引保持在保持面3a上。圖1所示之Y軸方向進給單元10之馬達13使滾珠螺桿11轉動，而使工作夾台3與移動基台15一起在Y軸方向上移動。然後，在加工位置感測器8檢測出位置決定部9後，即辨識為工作夾台3已在加工位置就定位，而以研磨進給單元30之馬達33使滾珠螺桿32轉動，並使研磨單元20與升降板35一起下降。 After the wafer W is placed on the holding surface 3a of the work chuck 3, the wafer W is sucked and held on the holding surface 3a by the attraction force of the suction source. The motor 13 of the feed unit 10 in the Y-axis direction shown in Fig. 1 rotates the ball screw 11, and moves the work chuck 3 together with the moving base 15 in the Y-axis direction. Then, after the processing position sensor 8 detects the position determining portion 9, it is recognized that the working chuck 3 has been positioned at the processing position, and the motor 33 of the grinding feed unit 30 rotates the ball screw 32 and causes the grinding. The unit 20 is lowered together with the lift plate 35.

如圖3所示，研磨漿料供給單元40會開啟閥門43而使研磨漿料供給源44及研磨漿料供給管41連通，並使預定供給量的研磨漿料流入研磨漿料供給管41，並沿著研磨漿料供給管41使研磨漿料45從供給口42噴出。作為研磨漿料之供給量，是設定為例如100~200ml/min。 As shown in FIG. 3, the polishing slurry supply unit 40 opens the valve 43 to communicate the polishing slurry supply source 44 and the polishing slurry supply pipe 41, and flows the polishing slurry of a predetermined supply amount into the polishing slurry supply pipe 41. The polishing slurry 45 is discharged from the supply port 42 along the polishing slurry supply pipe 41. The supply amount of the polishing slurry is set to, for example, 100 to 200 ml/min.

一邊將研磨墊25朝相對於工作夾台3接近之方向研磨進給一邊使主軸21旋轉而使研磨墊25朝箭頭A方向以例如1000rpm旋轉，並且使工作夾台3朝箭頭A方向以例如300rpm旋轉。然後，使一邊下降一邊旋轉的研磨墊25之研磨面25a接觸於旋轉之晶圓W的上表面Wa之整個面，而使研磨墊25與晶圓W相對地滑動。 While the polishing pad 25 is being ground in the direction approaching the working chuck 3, the spindle 21 is rotated to rotate the polishing pad 25 in the direction of the arrow A at, for example, 1000 rpm, and the working chuck 3 is oriented at, for example, 300 rpm in the direction of the arrow A. Rotate. Then, the polishing surface 25a of the polishing pad 25 that rotates while being lowered is brought into contact with the entire surface of the upper surface Wa of the rotating wafer W, and the polishing pad 25 is slid relative to the wafer W.

此時，當將從研磨漿料供給管41之噴出口42噴出的研磨漿料45供給於旋轉之晶圓W的上表面Wa及研磨墊25之研磨面25a來進入上表面Wa及研磨面25a之間時，可以使研磨漿料45之化學作用及研磨墊25之機械作用相輔相成，而研磨晶圓W之上表面Wa。在晶圓W之研磨中，是使研磨漿料45碰撞於側壁52、或從工作夾台3之周緣流下而蓄積於桶部51。在桶部51中蓄積100~200ml的研磨漿料。 At this time, the polishing slurry 45 discharged from the discharge port 42 of the polishing slurry supply pipe 41 is supplied to the upper surface Wa of the rotating wafer W and the polishing surface 25a of the polishing pad 25 to enter the upper surface Wa and the polishing surface 25a. Between the two, the chemical action of the polishing slurry 45 and the mechanical action of the polishing pad 25 can be complemented to polish the upper surface Wa of the wafer W. In the polishing of the wafer W, the polishing slurry 45 is caused to collide with the side wall 52 or flow down from the periphery of the work chuck 3 to be accumulated in the tub portion 51. 100 to 200 ml of the polishing slurry is accumulated in the barrel portion 51.

研磨漿料供給單元40在預定供給量的研磨漿料45流入研磨漿料供給管41後即關閉閥門43。接著，氣體供給單元55會使預定流量的氣體從被蓄積於桶部51之研磨漿料的蓄積液45a所覆蓋之氣體噴出口56噴出，以將研磨漿料45循環供給於研磨墊25之研磨面25a。氣體之流量是設定為例如50l/min。 The polishing slurry supply unit 40 closes the valve 43 after the predetermined supply amount of the polishing slurry 45 flows into the polishing slurry supply pipe 41. Then, the gas supply unit 55 ejects the gas of a predetermined flow rate from the gas discharge port 56 covered by the accumulating liquid 45a of the polishing slurry accumulated in the tub portion 51, and circulates the polishing slurry 45 to the polishing pad 25 for grinding. Face 25a. The flow rate of the gas is set to, for example, 50 l/min.

具體來說，氣體供給單元55是開啟閥門58而使氣體供給源57與氣體噴出口56連通，並且使預定流量的氣體從氣體噴出口56朝向研磨墊25之研磨面25a噴出。此噴出之氣體是藉由從蓄積於桶部51之研磨漿料的蓄積液45a的下方施加壓力而將研磨漿料45向上噴出，以將研磨漿料45循環供給於旋轉中之研磨墊25之研磨面25a。 Specifically, the gas supply unit 55 opens the valve 58 to allow the gas supply source 57 to communicate with the gas discharge port 56, and discharges a predetermined flow rate of gas from the gas discharge port 56 toward the polishing surface 25a of the polishing pad 25. The gas to be ejected is sprayed upward from the accumulating liquid 45a of the polishing slurry accumulated in the tub portion 51, and the polishing slurry 45 is ejected upward to circulate the polishing slurry 45 to the polishing pad 25 in rotation. Polished surface 25a.

供給於旋轉之研磨墊25之研磨面25a的研磨漿料45，會藉由研磨墊25的旋轉而連帶旋轉，且也會附著在保持於工作夾台3之晶圓W的上表面Wa以供用於上表面Wa之研磨。像這樣子進行而結束晶圓W之研磨加工後，即關閉閥門58並且開啟閥門61，以使吸引源60與氣體噴出口56連通，而將蓄積於桶部51的研磨漿料45予以吸引並往裝置外部排出。 The polishing slurry 45 supplied to the polishing surface 25a of the rotating polishing pad 25 is rotatably rotated by the rotation of the polishing pad 25, and is also attached to the upper surface Wa of the wafer W held by the working chuck 3 for use. Grinding on the upper surface Wa. After the polishing process of the wafer W is completed as described above, the valve 58 is closed and the valve 61 is opened to cause the suction source 60 to communicate with the gas discharge port 56, and the polishing slurry 45 accumulated in the barrel portion 51 is attracted. Discharge to the outside of the unit.

像這樣，因為研磨裝置1所具備之研磨漿料循環單元50具備有：在工作夾台3之周圍為可蓄積研磨漿料45之凹形的桶部51、和在蓄積於桶部51之研磨漿料之中具有朝向研磨墊25之研磨面25a噴出氣體的氣體噴出口56之氣體供給單元55，所以即使從構成研磨漿料供給單元40之研磨漿料供給管41將預定供給量的研磨漿料45供給於研磨墊25之研磨面25a和晶圓W之上表面Wa而使研磨漿料45朝工作夾台3及研磨墊25的周圍飛散，也能將研磨漿料45蓄積於桶部51。 In the polishing slurry circulation unit 50 included in the polishing apparatus 1 , the barrel portion 51 having a concave shape in which the polishing slurry 45 can be accumulated around the working chuck 3 and the polishing stored in the barrel portion 51 are provided. Since the gas supply unit 55 of the gas discharge port 56 that discharges the gas toward the polishing surface 25a of the polishing pad 25 is provided in the slurry, the predetermined supply amount of the slurry is supplied from the polishing slurry supply pipe 41 constituting the polishing slurry supply unit 40. The material 45 is supplied to the polishing surface 25a of the polishing pad 25 and the upper surface Wa of the wafer W, and the polishing slurry 45 is scattered around the work chuck 3 and the polishing pad 25, and the polishing slurry 45 can be accumulated in the barrel portion 51. .

因為將研磨漿料45蓄積於桶部51後，氣體供給單元55可使氣體從氣體噴出口56噴出，以將蓄積於桶部51之研磨 漿料45向上噴出，所以可以將研磨漿料45循環供給於研磨墊25之研磨面25a。 Since the polishing slurry 45 is accumulated in the tub portion 51, the gas supply unit 55 can eject the gas from the gas ejection port 56 to grind the slurry accumulated in the tub portion 51. Since the slurry 45 is ejected upward, the polishing slurry 45 can be circulated and supplied to the polishing surface 25a of the polishing pad 25.

因此，變得可將研磨漿料45之使用量抑制在必要最小限度，以有效率地循環利用研磨漿料45。 Therefore, it becomes possible to suppress the amount of use of the polishing slurry 45 to the minimum necessary to efficiently recycle the polishing slurry 45.

圖4所示之研磨漿料循環單元70為研磨漿料循環單元之變形例。研磨漿料循環單元70具備有：可蓄積研磨漿料之凹部形狀的桶部71、和連接於桶部71之下方側且可使氣體噴出的氣體供給單元76。桶部71是藉由可在上下方向上伸縮的蛇腹部72、連接於蛇腹部72之下端部且在中央具有使工作夾台3露出的開口之底板73、和從該開口之內周緣豎立設置的內側壁74所構成。與上述氣體供給單元55同樣，氣體供給單元76具備有形成於底板73的氣體噴出口77、透過閥門78而連接於氣體噴出口77的氣體供給源79。在蛇腹部72上連接有用以使蛇腹部72伸縮的升降氣缸75。升降氣缸75是藉由氣缸750、連接於蛇腹部72的上端部的支撐部751、和連接於支撐部751的活塞752所構成。 The polishing slurry circulation unit 70 shown in Fig. 4 is a modification of the polishing slurry circulation unit. The polishing slurry circulation unit 70 includes a tub portion 71 that can store a concave portion shape of the polishing slurry, and a gas supply unit 76 that is connected to the lower side of the tub portion 71 and that can eject the gas. The tub portion 71 is a bottom plate 73 that is expandable and contractible in the up-and-down direction, a bottom plate 73 that is connected to the lower end portion of the snake abdomen 72 and has an opening for exposing the working table 3 at the center, and is erected from the inner periphery of the opening. The inner side wall 74 is formed. Similarly to the gas supply unit 55, the gas supply unit 76 includes a gas discharge port 77 formed in the bottom plate 73, and a gas supply source 79 connected to the gas discharge port 77 through the valve 78. A lifting cylinder 75 for expanding and contracting the snake abdomen 72 is connected to the snake abdomen 72. The lift cylinder 75 is constituted by a cylinder 750, a support portion 751 connected to the upper end portion of the snake abdomen 72, and a piston 752 connected to the support portion 751.

如圖5所示，在一邊以研磨漿料循環單元70將研磨漿料循環供給於研磨墊25一邊以研磨墊25研磨晶圓W的時候，是藉由使活塞752於氣缸750的內部朝上方側移動以使支撐部751上升來將蛇腹部72伸長，而以蛇腹部72圍繞研磨位置中的研磨墊25及工作夾台3之周圍。像這樣，藉由做成可因應需要而將蛇腹部72在上下方向上伸縮之構成，可在研磨中以外使蛇腹部72朝下方退避，藉此可以防止蛇腹部72造成妨礙之情形。之後，研磨漿料循環單元70會與上 述研磨漿料循環單元50同樣地，開啟閥門78以使氣體供給源79與氣體噴出口77連通，並使預定流量的氣體從氣體噴出口77噴出，而將研磨漿料45從桶部51向上噴出以將研磨漿料45循環供給於研磨墊25之研磨面25a。在研磨漿料循環單元70中，也能夠將研磨漿料45之使用量抑制在必要最小限度，而可有效率地循環利用研磨漿料45。 As shown in FIG. 5, when the polishing slurry is circulated and supplied to the polishing pad 25 by the polishing slurry circulation unit 70, the wafer W is polished by the polishing pad 25 by bringing the piston 752 upward in the interior of the cylinder 750. The side is moved to raise the support portion 751 to elongate the snake abdomen 72, and the snake abdomen 72 surrounds the polishing pad 25 in the grinding position and the periphery of the working table 3. In this way, by making the configuration of the snake belly 72 expandable in the vertical direction as needed, the snake belly 72 can be retracted downwards during polishing, thereby preventing the snake belly 72 from being obstructed. After that, the polishing slurry circulation unit 70 will be connected with Similarly, the polishing slurry circulation unit 50 opens the valve 78 to allow the gas supply source 79 to communicate with the gas discharge port 77, and discharges a predetermined flow rate of gas from the gas discharge port 77, and lifts the polishing slurry 45 from the barrel portion 51 upward. The polishing slurry 45 is circulated and supplied to the polishing surface 25a of the polishing pad 25. In the polishing slurry circulation unit 70, the amount of the polishing slurry 45 can be suppressed to the minimum necessary, and the polishing slurry 45 can be efficiently recycled.

上述實施形態所示之研磨漿料供給單元40，雖然是形成為將研磨漿料供給管41插入主軸21之貫通孔26中，而將研磨漿料45供給於研磨墊25與晶圓W之上表面Wa之構成，但是也可以做成以下之構成：藉由例如不是在研磨單元而是在桶部51、71的上方配置研磨漿料供給單元，以將研磨漿料直接供給至桶部51、71之構成。 The polishing slurry supply unit 40 shown in the above embodiment is formed by inserting the polishing slurry supply tube 41 into the through hole 26 of the spindle 21, and supplies the polishing slurry 45 to the polishing pad 25 and the wafer W. The configuration of the surface Wa may be configured such that the polishing slurry supply unit is disposed above the barrel portions 51 and 71 instead of the polishing unit, for example, to directly supply the polishing slurry to the barrel portion 51, The composition of 71.

又，在上述實施形態中，雖然是做成一邊從研磨漿料供給單元40供給研磨漿料並以研磨墊研磨晶圓一邊將研磨漿料蓄積於桶部51，但是亦可在使研磨墊接觸於晶圓之前供給研磨漿料而將預定量之研磨漿料蓄積於桶部51、71之後，再使研磨墊25接觸於晶圓並以氣體供給單元55供給氣體，以使研磨漿料45循環供給於研磨墊25之研磨面25a。 Further, in the above-described embodiment, the polishing slurry is supplied from the polishing slurry supply unit 40, and the polishing slurry is accumulated in the barrel portion 51 while polishing the wafer with the polishing pad. However, the polishing pad may be brought into contact. After the polishing slurry is supplied before the wafer and a predetermined amount of the polishing slurry is accumulated in the barrel portions 51, 71, the polishing pad 25 is brought into contact with the wafer and supplied with gas by the gas supply unit 55 to circulate the polishing slurry 45. It is supplied to the polishing surface 25a of the polishing pad 25.

在研磨裝置1上也可以做成每研磨任意之預定片數之晶圓W就將蓄積於桶部51、71的研磨漿料排出，並在接下來的晶圓W之研磨時將新的研磨漿料蓄積於桶部51、71。如果每研磨預定之複數片的晶圓W就更換蓄積於桶部51、71的研磨漿料，會變得可依據相同的加工速率(rate)有效率地研磨加工晶圓W。 In the polishing apparatus 1, it is also possible to discharge the polishing slurry accumulated in the barrel portions 51 and 71 every time a predetermined number of wafers W are polished, and to perform new polishing in the subsequent polishing of the wafer W. The slurry is accumulated in the tub portions 51, 71. If the polishing slurry accumulated in the barrel portions 51, 71 is replaced every time the predetermined number of wafers W are polished, it becomes possible to efficiently polish the processed wafer W at the same processing rate.

上述實施形態所示之研磨漿料循環單元50、70，除了研磨裝置1之外，搭載於能夠進行磨削及研磨之加工裝置上亦可。在像這樣的加工裝置上，因為藉由設置研磨漿料循環單元，使研磨漿料不與磨削液混合，而可將研磨漿料再利用，因此變得不需要廢棄研磨漿料。再者，較理想的是，在此加工裝置中研磨晶圓時，是預先以洗淨機構等將桶部51、71洗淨並去除含有研削屑等的磨削廢液。 The polishing slurry circulation units 50 and 70 described in the above embodiments may be mounted on a processing apparatus capable of grinding and polishing, in addition to the polishing apparatus 1. In such a processing apparatus, since the polishing slurry circulation unit is provided and the polishing slurry is not mixed with the grinding liquid, the polishing slurry can be reused, so that it is not necessary to discard the polishing slurry. In the case of polishing the wafer in the processing apparatus, it is preferable to wash the barrel portions 51 and 71 with a cleaning mechanism or the like in advance and remove the grinding waste liquid containing the grinding debris or the like.

1‧‧‧研磨裝置 1‧‧‧ grinding device

2‧‧‧裝置基座 2‧‧‧ device base

3‧‧‧工作夾台 3‧‧‧Working table

3a‧‧‧保持面 3a‧‧‧ Keep face

6‧‧‧基台 6‧‧‧Abutment

7‧‧‧柱體 7‧‧‧Cylinder

8‧‧‧加工位置感測器 8‧‧‧Processing position sensor

9‧‧‧位置決定部 9‧‧‧Location Determination Department

10‧‧‧Y軸方向進給單元 10‧‧‧Y-axis feed unit

11、32‧‧‧滾珠螺桿 11, 32‧‧‧ ball screw

12‧‧‧軸承部 12‧‧‧ Bearing Department

13、23、33‧‧‧馬達 13, 23, 33‧‧ ‧ motor

14、34‧‧‧導軌 14, 34‧‧‧ rails

15‧‧‧移動台 15‧‧‧Mobile Station

20‧‧‧研磨單元 20‧‧‧grinding unit

21‧‧‧主軸 21‧‧‧ Spindle

22‧‧‧保持架 22‧‧‧Carry

24‧‧‧安裝座 24‧‧‧ Mounting

25‧‧‧研磨墊 25‧‧‧ polishing pad

25a‧‧‧研磨面 25a‧‧‧Grinding surface

30‧‧‧研磨進給單元 30‧‧‧ Grinding feed unit

31‧‧‧固定部 31‧‧‧ Fixed Department

35‧‧‧升降板 35‧‧‧ lifting plate

40‧‧‧研磨漿料供給單元 40‧‧‧grinding slurry supply unit

44‧‧‧研磨漿料供給源 44‧‧‧ Grinding slurry supply source

50‧‧‧研磨漿料循環單元 50‧‧‧Abrasion slurry circulation unit

51‧‧‧桶部 51‧‧‧ barrels

56‧‧‧氣體噴出口 56‧‧‧ gas outlet

X、Y、Z‧‧‧方向 X, Y, Z‧‧ Direction

Claims (1)

一種研磨裝置，具備：保持晶圓的工作夾台、具有將研磨該工作夾台所保持之晶圓的研磨墊裝設成可旋轉的主軸且以該研磨墊之研磨面研磨晶圓之研磨單元、將研磨漿料供給於該研磨墊之該研磨面與該工作夾台所保持之晶圓的上表面之研磨漿料供給單元、和將該研磨單元對該工作夾台所保持之晶圓的上表面朝接近及遠離的方向研磨進給之研磨進給單元，該研磨裝置具備在該工作夾台之下側蓄積該研磨漿料而將該研磨漿料循環供給於該研磨面之研磨漿料循環單元，該研磨漿料循環單元具備：凹狀之桶部，該桶部是藉由側壁、底板與內側壁所構成，該側壁會圍繞使該研磨墊之該研磨面接觸於該工作夾台所保持之晶圓之研磨位置中的該研磨墊和該工作夾台，該底板是連接於該側壁之下部且在中央具有使該工作夾台露出的開口，該內側壁是在該開口之內周緣豎立設置；及氣體供給單元，在蓄積於該桶部之研磨漿料之中具有朝向該研磨墊之該研磨面噴出氣體的氣體噴出口，從該氣體噴出口噴出之氣體將蓄積於該桶部之該研磨漿料向上噴出以循環供給於該研磨墊之該研磨面。 A polishing apparatus comprising: a working chuck for holding a wafer; a polishing unit having a polishing pad for polishing a wafer held by the working chuck to be a rotatable spindle; and grinding the wafer with a polishing surface of the polishing pad, Supplying the polishing slurry to the polishing surface of the polishing pad and the polishing slurry supply unit of the upper surface of the wafer held by the working chuck, and the upper surface of the wafer held by the polishing unit to the working chuck Grinding and feeding the grinding and feeding unit in a direction close to and away from the direction, the polishing device includes a polishing slurry circulation unit that accumulates the polishing slurry on the lower side of the working chuck and circulates the polishing slurry to the polishing surface. The polishing slurry circulation unit comprises: a concave barrel portion formed by a side wall, a bottom plate and an inner side wall, the side wall surrounding a crystal which is maintained by contacting the polishing surface of the polishing pad with the working clamping table The polishing pad and the working clamping table in the round grinding position, the bottom plate is connected to the lower portion of the side wall and has an opening at the center for exposing the working clamping table, the inner side wall is inside the opening And a gas supply unit having a gas discharge port that discharges gas toward the polishing surface of the polishing pad, and a gas ejected from the gas ejection port is accumulated in the barrel portion of the polishing slurry accumulated in the barrel portion The polishing slurry is ejected upward to be cyclically supplied to the polishing surface of the polishing pad.
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TWI665054B (en) 2019-07-11
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