CN106141902A - Lapping device - Google Patents

Lapping device Download PDF

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Publication number
CN106141902A
CN106141902A CN201610312950.7A CN201610312950A CN106141902A CN 106141902 A CN106141902 A CN 106141902A CN 201610312950 A CN201610312950 A CN 201610312950A CN 106141902 A CN106141902 A CN 106141902A
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CN
China
Prior art keywords
slurry
polishing
chuck table
wafer
polishing pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610312950.7A
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Chinese (zh)
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CN106141902B (en
Inventor
山中聪
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Disco Corp
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Disco Corp
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Publication date
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Publication of CN106141902A publication Critical patent/CN106141902A/en
Application granted granted Critical
Publication of CN106141902B publication Critical patent/CN106141902B/en
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/34—Accessories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)

Abstract

Lapping device is provided, reduces the usage amount of slurry and recycle slurry efficiently.Lapping device (1) has and retains slurry (45) in the downside of chuck table (3) and circulate the abradant surface (25a) of grinding pad (25) and provide the size circulations component (50) of slurry (45), size circulations component (50) has: the bucket portion (51) of concave shape, and it retains slurry (45) around chuck table (3)；And air supply member (55), it has the air ejiction opening (56) towards this abradant surface (25a) ejection air in the slurry retaining in a barrel portion (51), therefore, it is possible to retain in bucket portion (51) slurry (45) and air supply member (55) can from air ejiction opening (56) ejection air the slurry (45) that will remain in a barrel portion (51) spray abradant surface (25a) circulation offer slurry (45) to grinding pad (25).Thus, reduce the usage amount of slurry (45) and recycle slurry (45) efficiently.

Description

Grinding device
Technical Field
The present invention relates to a polishing apparatus for polishing a wafer while supplying slurry to a polishing surface of a polishing pad.
Background
Since the flexural strength of a wafer is reduced when a workpiece such as a wafer is thinned by grinding, the flexural strength is improved by polishing the workpiece surface of the wafer. As an apparatus for Polishing a wafer, for example, a Polishing apparatus capable of Polishing a wafer by a Chemical Mechanical Polishing method called CMP (Chemical Mechanical Polishing) is used. A polishing apparatus generally employs a structure in which a polishing pad is disposed on the lower side and a holding portion for holding a wafer is disposed on the upper side, and polishes the wafer by pressing the wafer against the polishing pad while supplying slurry (polishing liquid) to the polishing surface of the polishing pad. In a special apparatus for only grinding, the following is proposed: for example, slurry used for polishing is collected in a tank and circulated by a circulation pump (see, for example, patent document 1 below).
Further, a machining apparatus capable of performing grinding and polishing in one apparatus is proposed, the machining apparatus being configured to: a chuck table for holding a wafer is disposed on the lower side, and a grinding member and a polishing member are disposed on the upper side (see, for example, patent document 2 below). When polishing a ground wafer, a polishing pad is pressed against the wafer while slurry is supplied to the wafer to polish the wafer.
Patent document 1: japanese laid-open patent publication No. 3384530
Patent document 2: japanese patent No. 5406676
However, in the polishing apparatus capable of recycling the slurry as described above, since the slurry is continuously supplied to the polishing surface of the polishing pad when the wafer is polished, the amount of the slurry used increases, and the economical efficiency is poor. Further, when the wafer is polished by the above-described processing apparatus, the slurry supplied to the wafer falls from the peripheral side of the chuck table holding the wafer and is mixed with the waste grinding liquid at the time of grinding, so that it is difficult to reuse the slurry. In order to reuse the slurry, it is necessary to adopt a device structure in which the slurry is not mixed with the grinding waste liquid, but it is difficult to adopt such a structure. Further, since it is difficult to recover only the slurry from the grinding waste liquid mixed with the slurry, the slurry that can be reused is discarded together with the grinding waste liquid, and a lot of slurry is wasted.
Disclosure of Invention
The present invention has been made in view of the above circumstances, and an object thereof is to provide a polishing apparatus capable of efficiently recycling slurry while suppressing the amount of slurry used.
The polishing apparatus of the present invention comprises: a chuck table for holding a wafer; a polishing member having a spindle rotatably attached to a polishing pad for polishing the wafer held by the chuck table, the polishing member polishing the wafer by a polishing surface of the polishing pad; a slurry supply member that supplies a slurry to the polishing surface of the polishing pad and an upper surface of the wafer held by the chuck table; and a polishing feed member that performs polishing feed to the polishing member in a direction approaching and separating from an upper surface of the wafer held by the chuck table, wherein the polishing apparatus has a slurry circulation member that retains the slurry on a lower side of the chuck table and circulates and supplies the slurry to the polishing surface, the slurry circulation member having: a tub having a concave shape including a side wall surrounding the polishing pad and the chuck table at a polishing position where the polishing surface of the polishing pad is in contact with the wafer held by the chuck table, a bottom plate connected to a lower portion of the side wall and having an opening in a center thereof through which the chuck table is exposed, and an inner side wall standing upright at an inner periphery of the opening; and an air supply member having an air ejection port for ejecting air toward the polishing surface of the polishing pad among the slurry retained in the tub, the air ejected from the air ejection port ejecting the slurry retained in the tub to circulate and supply the slurry to the polishing surface of the polishing pad.
The polishing apparatus of the present invention comprises: a slurry supply member that supplies slurry to the polishing pad and the wafer held by the chuck table; and a slurry circulation member for circulating and supplying the slurry to the polishing surface of the polishing pad while retaining the slurry on the lower side of the chuck table, the slurry circulation member comprising: a tub portion having a concave shape for storing slurry around the chuck table; and an air supply member having an air discharge port for discharging air toward the polishing surface of the polishing pad in the slurry stored in the barrel, so that the slurry can be stored in the barrel even if the slurry is scattered around the rotating chuck table and the polishing pad by supplying the slurry to the polishing surface of the polishing pad and the upper surface of the wafer by the slurry supply member.
Further, since the air supply member ejects air from the air ejection port to eject the slurry remaining in the tub, the slurry can be supplied to the polishing surface of the polishing pad in a circulating manner. Therefore, the amount of the slurry used can be reduced, and the slurry can be efficiently recycled.
Drawings
Fig. 1 is a perspective view showing the structure of the polishing apparatus.
Fig. 2 is a sectional view showing the structures of the grinding member, the chuck table and the slurry circulation member.
Fig. 3 is a cross-sectional view showing a state in which a wafer is polished while slurry is circulated and supplied to a polishing pad by a slurry circulation member.
Fig. 4 is a sectional view showing a structure of a modified example of the slurry circulation member.
Fig. 5 is a cross-sectional view showing a state in which a wafer is polished while slurry is circulated and supplied to a polishing pad by using a modified example of the slurry circulation member.
Description of the reference symbols
1: a grinding device; 2: a device base; 3: a chuck table; 3 a: a holding surface; 4: an electric motor; 5: a rotating shaft; 6: a base station; 7: a column; 8: a machining position sensor; 9: a positioning part; 10: a Y-axis direction feeding member; 11: a ball screw; 12: a bearing portion; 13: an electric motor; 14: a guide rail; 15: a mobile station; 20: a grinding member; 21: a main shaft; 22: a support; 23: an electric motor; 24: a mounting seat; 25: a polishing pad; 25 a: grinding the surface; 26: a through hole; 30: an abrasive feed member; 31: a fixed part; 32: a ball screw; 33: an electric motor; 34: a guide rail; 35: a lifting plate; 40: a slurry supply member; 41: a slurry supply pipe; 42: a supply port; 43: a valve; 44: a slurry supply source; 45: sizing agent; 45 a: storing the liquid; 50: a slurry circulation member; 51: a barrel portion; 52: a side wall; 53: a base plate; 54: an inner sidewall; 55: an air supply member; 56: an air outlet; 57: an air supply source; 58: a valve; 60: an attraction source; 61: a valve; 70: a slurry circulation member; 71: a barrel portion; 72: a crumple section; 73: a base plate; 74: an inner sidewall; 75: a lifting cylinder; 750: a cylinder; 751: a support portion; 752: a piston; 76: an air supply member; 77: an air outlet; 78: a valve; 79: an air supply source.
Detailed Description
A polishing apparatus 1 shown in fig. 1 is an example of a polishing apparatus for polishing a wafer by CMP. The polishing apparatus 1 has an apparatus base 2 extending in the Y-axis direction, and a chuck table 3 which holds a wafer and is rotatable is provided above the apparatus base 2. The upper surface of the chuck table 3 is a holding surface 3a for holding a wafer, and a suction source, not shown, is connected to the holding surface 3 a. The rotating shaft 5 is connected to the lower end of the chuck table 3, and the rotating shaft 5 is connected to a motor 4 shown in fig. 2. The motor 4 rotates the rotary shaft 5, and thereby the chuck table 3 can be rotated at a predetermined rotational speed.
A base 6 extending in the Y-axis direction is disposed inside the apparatus base 2. A Y-axis direction feed member 10 for moving the chuck table 3 in the Y-axis direction is disposed on the base 6. The Y-axis direction feeding member 10 has: a ball screw 11 extending in the Y-axis direction; a bearing portion 12 that rotatably supports one end of the ball screw 11; a motor 13 connected to the other end of the ball screw 11; a pair of guide rails 14 extending parallel to the ball screw 11; and a moving table 15 that supports the chuck table 3 from below. The pair of guide rails 14 are in sliding contact with a lower portion of the moving table 15, and the ball screw 11 is screwed to a nut formed in a central portion of the moving table 15. The motor 13 rotates the ball screw 11 to move the chuck table 3 in the Y-axis direction together with the moving table 15.
A column 7 is provided upright on the rear portion of the apparatus base 2 in the X-axis direction. In front of the column 7: a polishing member 20 for polishing the wafer held by the chuck table 3; and a grinding and feeding member 30 that performs grinding and feeding of the grinding member 20 in directions approaching and separating from the upper surface of the wafer held by the chuck table 3.
The polishing member 20 has: a main shaft 21 having an axial center in the Z-axis direction; a holder 22 that holds a housing rotatably supported around the main shaft 21; a motor 23 connected to one end of the main shaft 21; and a polishing pad 25 detachably attached to a lower end of the spindle 21 via an attachment seat 24. The lower surface of the polishing pad 25 is a polishing surface 25a for polishing a wafer. A through hole 26 extending in the axial direction is formed at the rotation center of the spindle 21 shown in fig. 2.
The grinding feed member 30 shown in fig. 1 has: a fixing portion 31 fixed to the column 7; a ball screw 32 extending in the Z-axis direction; a motor 33 connected to one end of the ball screw 32; a pair of guide rails 34 extending parallel to the ball screw 32; and a lifting plate 35 having one surface connected to the polishing member 20. The pair of guide rails 34 are in sliding contact with the other surface of the elevating plate 35, and the ball screw 32 is screwed to a nut formed at the center of the elevating plate 35. The grinding member 20 can be moved up and down in the Z-axis direction together with the lifting plate 35 by driving the ball screw 32 by the motor 33.
A processing position sensor 8 is disposed near the Y-axis direction feed member 10 which is the upper surface of the base 2, and the processing position sensor 8 detects the processing position of the chuck table 3 at which the wafer can be polished by the polishing pad 25 of the polishing member 20. A positioning portion 9 recognized by the machining position sensor 8 is disposed on a side surface of the moving table 15. The position of the chuck table 3 when the positioning portion 9 is detected by the machining position sensor 8 is a machining position. The processing position is a position where the entire upper surface of the wafer held on the chuck table 3 overlaps at least the central region of the polishing surface 25a of the polishing pad 25.
The polishing apparatus 1 includes: a slurry supply member 40 connected to the polishing member 20 and supplying slurry to the polishing pad 25 and the wafer held by the chuck table 3; and a slurry circulation member 50 for circulating and supplying the slurry to the polishing surface 25a of the polishing pad 25 while retaining the slurry at a position below the chuck table 3.
As shown in fig. 2, the slurry supply member 40 has: a slurry supply pipe 41 inserted into the through hole 26 of the main shaft 21; and a slurry supply source 44 connected to an upper end of the slurry supply pipe 41 via a valve 43. A supply port 42 for discharging the slurry is formed at the lower end of the slurry supply pipe 41. Then, by opening the valve 43, a predetermined supply amount of the slurry can be discharged downward from the supply port 42 of the slurry supply pipe 41.
The slurry circulation member 50 has: a tub 51 of a concave shape surrounding the chuck table 3 and retaining slurry; and an air supply member 55 that ejects air toward the polishing surface 25a of the polishing pad 25. The barrel 51 is movable in the Y-axis direction together with the chuck table 3, and the barrel 51 includes: a side wall 52 surrounding the polishing pad 25 and the chuck table 3 at a polishing position where the wafer is polished by the polishing member 20; a bottom plate 53 connected to a lower portion of the side wall 52 and having an opening at the center to expose the chuck table 3; and an inner side wall 54 erected from an inner peripheral edge of the opening. The polishing position is a height position of the polishing member 20 in a state where the polishing surface 25a of the polishing pad 25 is in contact with the upper surface of the wafer held on the chuck table 3. The side wall 52 extends to a position higher than the position of the polishing pad 25 when the polishing member 20 is at the polishing position, and can cover the periphery of the polishing pad 25 and the chuck table 3 during polishing, thereby preventing slurry from scattering.
The air supply member 55 has: an air outlet 56 formed in the bottom plate 53 for storing the slurry, connected to a position just below the bottom plate 53 constituting the tub 51; and an air supply source 57 connected to the air outlet 56 via a valve 58. When the valve 58 is opened in a state where the slurry is retained in the barrel portion 51, air at a predetermined flow rate is ejected from the air ejection port 56, and the slurry retained in the barrel portion 51 can be ejected. The size of the air ejection port 56 is, for example, about 8 to 10mm in diameter.
The air ejection port 56 is preferably formed at a position close to the chuck table 3. This makes it easy for the slurry supplied by circulating the polishing surface 25a of the rotating polishing pad 25 to adhere to the wafer held on the chuck table 3.
The suction source 60 is connected to the air outlet 56 via a valve 61. The valve 58 is closed and the valve 61 is opened, whereby the suction force of the suction source 60 acts on the air outlet 56 to suck the slurry remaining in the tub 51 and discharge the slurry to the outside of the apparatus.
Next, an operation example of the polishing apparatus 1 will be described. The wafer W shown in fig. 2 is an example of a workpiece, and the upper surface Wa polished by the polishing pad 25 is a polished surface. On the other hand, the surface opposite to the upper surface Wa serves as a lower surface Wb which is sucked and held on the holding surface 3a of the chuck table 3.
After the wafer W is placed on the holding surface 3a of the chuck table 3, the wafer W is sucked and held on the holding surface 3a by the suction force of the suction source. The motor 13 of the Y-axis direction feeding member 10 shown in fig. 1 rotates the ball screw 11 and moves the chuck table 3 in the Y-axis direction together with the moving base 15. When the processing position sensor 8 detects the positioning portion 9, which recognizes that the chuck table 3 is positioned at the processing position, the motor 33 of the grinding and feeding member 30 rotates the ball screw 32 and lowers the grinding member 20 together with the lifting plate 35.
As shown in fig. 3, the slurry supply member 40 opens the valve 43 to communicate the slurry supply source 44 with the slurry supply pipe 41, and causes a predetermined amount of slurry to flow into the slurry supply pipe 41 and causes the slurry 45 to be ejected from the supply port 42 along the slurry supply pipe 41. The amount of slurry to be supplied is set to, for example, 100 to 200 ml/min.
While the polishing pad 25 is being fed in a direction of approaching the chuck table 3, the spindle 21 is rotated to rotate the polishing pad 25 at, for example, 1000rpm in the direction of arrow a, and the chuck table 3 is rotated at, for example, 300rpm in the direction of arrow a. The polishing surface 25a of the polishing pad 25 rotating while being lowered is brought into contact with the entire upper surface Wa of the rotating wafer W, and the polishing pad 25 and the wafer W are slid relative to each other.
At this time, when the slurry 45 discharged from the discharge port 42 of the slurry supply pipe 41 is supplied to the upper surface Wa of the rotating wafer W and the polishing surface 25a of the polishing pad 25 and enters between the upper surface Wa and the polishing surface 25a, the chemical action of the slurry 45 and the mechanical action of the polishing pad 25 cooperate with each other, and the upper surface Wa of the wafer W can be polished. During polishing of the wafer W, the slurry 45 splashes on the side wall 52 or flows down from the peripheral edge of the chuck table 3 and is retained in the tub 51. 100-200 ml of slurry was left in the barrel part 51.
When a predetermined amount of slurry 45 flows into the slurry supply pipe 41, the slurry supply member 40 closes the valve 43. Next, the air supply member 55 discharges a predetermined flow rate of air from the air discharge port 56 to circulate and supply the slurry 45 to the polishing surface 25a of the polishing pad 25, wherein the air discharge port 56 is covered with the stock solution 45a of the slurry stored in the tub 51. The flow rate of the air is set to, for example, 50 l/min.
Specifically, the air supply member 55 opens the valve 58 to communicate the air supply source 57 with the air discharge port 56, and discharges a predetermined flow rate of air from the air discharge port 56 toward the polishing surface 25a of the polishing pad 25. The ejected air applies pressure from below the slurry reservoir 45a stored in the tub 51 to eject the slurry 45, thereby circulating and supplying the slurry 45 to the polishing surface 25a of the rotating polishing pad 25.
The slurry 45 supplied to the polishing surface 25a of the rotating polishing pad 25 is also adhered to the upper surface Wa of the wafer W held on the chuck table 3 and used for polishing the upper surface Wa, being carried by the rotation of the polishing pad 25. After the polishing of the wafer W is completed, the valve 58 is closed and the valve 61 is opened to communicate the suction source 60 with the air ejection port 56, thereby sucking the slurry 45 stored in the tub 51 and discharging the slurry 45 to the outside of the apparatus.
As described above, the slurry circulation member 50 included in the polishing apparatus 1 includes: a concave-shaped barrel portion 51 that retains the slurry 45 around the chuck table 3; and an air supply member 55 having an air discharge port 56 for discharging air toward the polishing surface 25a of the polishing pad 25 among the slurry stored in the barrel portion 51, so that the slurry 45 can be stored in the barrel portion 51 even if the slurry 45 is scattered around the chuck table 3 and the polishing pad 25 by supplying a predetermined supply amount of the slurry 45 from the slurry supply pipe 41 constituting the slurry supply member 40 to the polishing surface 25a of the polishing pad 25 and the upper surface Wa of the wafer W.
After the slurry 45 is retained in the tub 51, the air supply member 55 ejects air from the air ejection port 56 to eject the slurry 45 retained in the tub 51, so that the slurry 45 can be circulated and supplied to the polishing surface 25a of the polishing pad 25.
Therefore, the amount of the slurry 45 used can be minimized, and the slurry 45 can be recycled efficiently.
The slurry circulation member 70 shown in fig. 4 is a modification of the slurry circulation member. The slurry circulation member 70 includes a tub 71 having a concave shape for storing the slurry and an air supply member 76 connected to a lower side of the tub 71 and ejecting air. The barrel portion 71 includes: a bellows portion 72 that is vertically extendable; a bottom plate 73 connected to a lower end of the bellows portion 72 and having an opening at the center thereof for exposing the chuck table 3; and an inner side wall 74 erected from an inner peripheral edge of the opening. The air supply member 76 includes, in the same manner as the air supply member 55: an air ejection port 77 formed in the bottom plate 73; and an air supply source 79 connected to the air outlet port 77 via a valve 78. A lifting cylinder 75 for extending and contracting the bellows portion 72 is connected to the bellows portion 72. The lift cylinder 75 includes: a cylinder 750; a support portion 751 connected to the upper end of the bellows portion 72; and a piston 752 connected to the support portion 751.
As shown in fig. 5, when the wafer W is polished by the polishing pad 25 while the slurry is circulated and supplied to the polishing pad 25 by the slurry circulation member 70, the piston 752 moves upward inside the cylinder 750, so that the support portion 751 is raised to extend the bellows portion 72, and the periphery of the polishing pad 25 and the chuck table 3 at the polishing position is surrounded by the bellows portion 72. By adopting the structure in which the bellows portion 72 is extended and contracted in the vertical direction as needed, the bellows portion 72 can be prevented from becoming an obstacle by retracting the bellows portion 72 downward except during polishing. Thereafter, the slurry circulation member 70 opens the valve 78, communicates the air supply source 79 with the air discharge port 77, discharges a predetermined flow rate of air from the air discharge port 77, and discharges the slurry 45 from the tub 51 to circulate and supply the slurry 45 to the polishing surface 25a of the polishing pad 25, in the same manner as the above-described slurry circulation member 50. The slurry circulation member 70 can also efficiently circulate the slurry 45 while minimizing the amount of the slurry 45 used.
The slurry supply member 40 according to the above embodiment is configured to: the slurry supply pipe 41 is inserted into the through hole 26 of the spindle 21 to supply the slurry 45 to the polishing pad 25 and the upper surface Wa of the wafer W, but may be configured such that: the slurry supply member is disposed above the barrel portions 51 and 71 separately from the polishing member, and directly supplies the slurry to the barrel portions 51 and 71.
Further, in the above embodiment, the slurry is retained in the barrel portion 51 while the slurry is supplied from the slurry supply member 40 and the wafer is polished by the polishing pad, but the slurry may be supplied before the polishing pad is brought into contact with the wafer and a predetermined amount of the slurry is retained in the barrel portions 51 and 71, and then the slurry 45 may be circulated and supplied to the polishing surface 25a of the polishing pad 25 by bringing the polishing pad 25 into contact with the wafer and supplying air by the air supply member 55.
In the polishing apparatus 1, the following configuration may be adopted: the slurry retained in the barrel portions 51, 71 is discharged every time an arbitrary predetermined number of wafers W are polished, and the slurry is retained in the barrel portions 51, 71 again at the time of polishing the next wafer W. If the slurry remaining in the tub 51, 71 is replaced every time a predetermined plurality of wafers W are polished, the wafers W can be polished at the same processing rate and with high efficiency.
The slurry circulation members 50 and 70 shown in the above embodiments may be mounted in a processing apparatus capable of grinding and polishing, in addition to the polishing apparatus 1. In such a processing apparatus, by providing the slurry circulation member, only the slurry can be reused without mixing the slurry with the grinding fluid, and therefore, the slurry does not need to be discarded. When the wafer is polished in this processing apparatus, it is preferable to remove the waste grinding fluid including the grinding chips by cleaning the barrels 51 and 71 with a cleaning mechanism or the like in advance.

Claims (1)

1. A polishing apparatus, comprising:
a chuck table for holding a wafer;
a polishing member having a spindle rotatably attached to a polishing pad for polishing the wafer held by the chuck table, the polishing member polishing the wafer by a polishing surface of the polishing pad;
a slurry supply member that supplies a slurry to the polishing surface of the polishing pad and an upper surface of the wafer held by the chuck table; and
an abrasive feeding member that performs abrasive feeding of the abrasive member in directions approaching and separating from an upper surface of the wafer held by the chuck table,
wherein,
the polishing apparatus has a slurry circulating member that retains the slurry on the lower side of the chuck table to circulate and supply the slurry to the polishing surface,
the slurry circulation member has:
a tub having a concave shape including a side wall surrounding the polishing pad and the chuck table at a polishing position where the polishing surface of the polishing pad is in contact with the wafer held by the chuck table, a bottom plate connected to a lower portion of the side wall and having an opening in a center thereof through which the chuck table is exposed, and an inner side wall standing upright at an inner periphery of the opening; and
an air supply member having an air ejection port for ejecting air toward the polishing surface of the polishing pad in the slurry stored in the tub,
the air ejected from the air ejection port ejects the slurry remaining in the barrel portion to circulate and supply the slurry to the polishing surface of the polishing pad.
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KR102305377B1 (en) 2021-09-24
TWI665054B (en) 2019-07-11
JP2016215284A (en) 2016-12-22
KR20160134513A (en) 2016-11-23
CN106141902B (en) 2019-07-30
TW201702002A (en) 2017-01-16

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