JP2008302458A - Polishing device and polishing method - Google Patents

Polishing device and polishing method Download PDF

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JP2008302458A
JP2008302458A JP2007151167A JP2007151167A JP2008302458A JP 2008302458 A JP2008302458 A JP 2008302458A JP 2007151167 A JP2007151167 A JP 2007151167A JP 2007151167 A JP2007151167 A JP 2007151167A JP 2008302458 A JP2008302458 A JP 2008302458A
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polishing
chuck
glass plate
polished
holding member
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JP5093650B2 (en
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Susumu Hoshino
進 星野
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Nikon Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a polishing device uniformly correcting and polishing a local irregular part of a polishing object, and also to provide a polishing method to polish the local irregular part by using this polishing device. <P>SOLUTION: This polishing device is constituted to polish a protruded part A of a glass pane 2 by positioning a chuck Y axis movable carriage 34 and a chuck X axis movable carriage 35 so that a top point of the protruded part A of the glass pane 2 and a rotation axis of a chuck rotation axis 32 are overlapped on each other by respectively moving the chuck Y axis movable carriage 34 and the chuck X axis movable carriage 35 by driving mechanisms D8, D9, rotating the glass pane 2 with the chuck Y axis movable carriage 34 and chuck X axis movable carriage 35 provided on a chuck rotating base 33, by rotating the chuck rotating base 33 and a vacuum chuck 36 around the top point of the protruded part A as their center, and by pressurizing a polishing surface of an auxiliary polishing pad 25 on the protruded part A of the glass pane 2 by prescribed contact pressure in a state where a rotation axis of an auxiliary polishing head rotation axis 21 and the rotation axis of the chuck rotation axis 32 match with each other. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ガラス板等の研磨対象物の表面研磨を行う研磨装置及びその研磨方法に関する。   The present invention relates to a polishing apparatus for polishing a surface of an object to be polished such as a glass plate and a polishing method thereof.

ガラス板等の研磨対象物の表面の研磨加工を行うCMP装置(化学機械研磨装置)では、研磨対象物自体の大きな周期の凹凸(うねり)に沿った一様な研磨(これを、グローバル研磨と称する)と、このグローバル研磨を行った後に研磨対象物の被研磨面に残る局所的な凹凸部を平坦化する修正研磨(これを、ローカル研磨と称する)とを合わせて行うことが求められている。   In a CMP apparatus (chemical mechanical polishing apparatus) that polishes the surface of an object to be polished such as a glass plate, uniform polishing along a large period of irregularities (waviness) of the object to be polished (this is called global polishing). And the modified polishing for flattening the local irregularities remaining on the polished surface of the object to be polished after this global polishing (referred to as local polishing) is required. Yes.

従来、研磨対象物の局所的な凹凸部を有する被研磨面の修正研磨(ローカル研磨)を行う場合、この凹凸部の研磨を行うに適した小径の研磨パッドが貼り付けられた研磨工具の回転軸を被研磨面の法線と平行にし、研磨工具の回転軸の延長線上に凹凸部が位置するように研磨工具を走査して、研磨工具を自転及び一方向に往復動(揺動)させつつ、研磨工具を回転していない研磨対象物の凹凸部に押し当てて凹凸部を選択的に研磨する(例えば、特許文献1を参照)。   Conventionally, when correction polishing (local polishing) of a surface to be polished having local uneven portions of an object to be polished is performed, rotation of a polishing tool to which a small-diameter polishing pad suitable for polishing the uneven portions is attached. The polishing tool is rotated and reciprocated (oscillated) in one direction by rotating the polishing tool so that the shaft is parallel to the normal line of the surface to be polished and the uneven part is positioned on the extended line of the rotating shaft of the polishing tool. Meanwhile, the uneven portion is selectively polished by pressing the polishing tool against the uneven portion of the polishing object that is not rotating (see, for example, Patent Document 1).

国際公開第04/075276号パンフレットInternational Publication No. 04/075276 Pamphlet

ところで、このような研磨工具による研磨量は、研磨パッドと研磨対象物の被研磨面との相対速度に比例するため、研磨パッドにおける回転中心近傍の位置(回転速度が小さい位置)では研磨量が小さく、回転中心から離れた位置(回転速度が大きい位置)では研磨量が大きくなるというように研磨量にバラツキが生じる。このため、従来の修正研磨では、研磨工具の揺動方向においては被研磨面の局所的な凹凸部を均一に研磨することができるが、揺動方向と異なる方向(とくに揺動方向と直行する方向)においては研磨量のバラツキが生じて凹凸部を均一に研磨できず、被研磨面を高精度に目的の面形状に仕上げることができないという問題があった。   By the way, the amount of polishing by such a polishing tool is proportional to the relative speed between the polishing pad and the surface to be polished of the object to be polished, and therefore the polishing amount is at a position near the rotation center of the polishing pad (position where the rotation speed is low). The polishing amount varies such that the polishing amount increases at a small position away from the center of rotation (position where the rotation speed is high). For this reason, in the conventional correction polishing, it is possible to uniformly polish the local irregularities on the surface to be polished in the swinging direction of the polishing tool, but in a direction different from the swinging direction (particularly perpendicular to the swinging direction). In the direction), the amount of polishing varies, and the uneven portion cannot be polished uniformly, and the surface to be polished cannot be finished to the target surface shape with high accuracy.

本発明は、このような問題に鑑みてなされたものであり、研磨対象物の局所的な凹凸部を均一に修正研磨することができる研磨装置、及びこの研磨装置を用いて局所的な凹凸部を研磨する研磨方法を提供することを目的とする。   The present invention has been made in view of such problems, and a polishing apparatus capable of uniformly correcting and polishing a local uneven portion of an object to be polished, and a local uneven portion using the polishing apparatus. It aims at providing the grinding | polishing method which grind | polishes.

上記課題を解決して目的を達成するため、第1の本発明に係る研磨装置は、研磨対象物を保持する保持部材と、前記保持部材に保持された研磨対象物の研磨対象面と対向するとともに前記研磨対象面の局所的な研磨を行うに適した小径の研磨面を有する研磨パッドを備え、前記研磨パッドを自転及び往復動させながら前記研磨面を前記研磨対象面の研磨対象部に当接させて前記研磨対象部の研磨を行う研磨機構と、前記保持部材を支持して回転可能であり、その回転軸が前記研磨パッドの往復動軌跡と略交差するように設けられた回転部材と、前記回転部材に対して前記保持部材を前記回転軸に垂直な面内で移動させる保持部材移動機構とを備え、前記保持部材移動機構により前記保持部材を前記回転部材上で移動させて前記保持部材により保持した研磨対象物の研磨対象部を前記回転部材の回転軸と重なるように位置させ、前記回転部材を回転させて前記保持部材及び前記研磨対象物を前記回転軸を中心として回転させ、前記研磨パッドを自転及び往復動させながら前記研磨対象物の研磨対象面に当接させて前記研磨対象部の研磨を行うように構成される。   In order to solve the above problems and achieve the object, a polishing apparatus according to a first aspect of the present invention is a holding member that holds an object to be polished and a surface to be polished of the object to be polished held by the holding member. And a polishing pad having a small-diameter polishing surface suitable for local polishing of the polishing target surface, and the polishing surface is applied to the polishing target portion of the polishing target surface while rotating and reciprocating the polishing pad. A polishing mechanism that contacts and polishes the portion to be polished, a rotating member that supports the holding member and is rotatable, and a rotation member that is provided so that a rotation axis thereof substantially intersects with a reciprocating locus of the polishing pad; A holding member moving mechanism that moves the holding member in a plane perpendicular to the rotation axis with respect to the rotating member, and the holding member moving mechanism moves the holding member on the rotating member to hold the holding member. By material The polishing target portion of the held polishing object is positioned so as to overlap the rotation shaft of the rotating member, the rotating member is rotated, the holding member and the polishing object are rotated about the rotating shaft, and the polishing is performed. While the pad is rotated and reciprocated, the polishing target portion is brought into contact with the polishing target surface of the polishing target and the polishing target portion is polished.

上記研磨装置において前記研磨機構は、前記研磨パッドの外径の0.4倍以上の往復動ストロークで前記研磨パッドを往復動させることが好ましい。   In the polishing apparatus, it is preferable that the polishing mechanism reciprocates the polishing pad with a reciprocating stroke not less than 0.4 times the outer diameter of the polishing pad.

第2の本発明は、前記研磨対象物はSiO2からなる矩形状のガラス板であり、上記研磨装置を用いて前記ガラス板の研磨対象部を研磨する研磨方法である。 The second aspect of the present invention is a polishing method in which the object to be polished is a rectangular glass plate made of SiO 2 and the polishing target portion of the glass plate is polished using the polishing apparatus.

本発明に係る研磨装置によれば、保持部材移動機構により保持部材を回転部材上で移動させて保持部材により保持した研磨対象物の研磨対象部を回転部材の回転軸と重なるように位置させ、回転部材を回転させて保持部材及び研磨対象物を上記回転軸を中心として回転させ、研磨パッドを自転及び往復動させながら研磨対象物の研磨対象面に当接させて研磨対象部の研磨を行うように構成される。このため、研磨パッドの自転及び往復動とともに研磨対象物自体を回転させて研磨対象物の局所的な研磨を行うことができ、研磨パッドと研磨対象物との相対速度の違いによる研磨量のバラツキの影響を小さくして、研磨対象物の局所的な研磨対象部を均一に修正研磨して目的の面形状に仕上げることができる。   According to the polishing apparatus according to the present invention, the holding member moving mechanism moves the holding member on the rotating member, and the polishing target portion of the polishing object held by the holding member is positioned so as to overlap the rotating shaft of the rotating member, The holding member and the polishing object are rotated about the rotation axis by rotating the rotating member, and the polishing pad is rotated and reciprocated to contact the polishing object surface of the polishing object to polish the polishing object portion. Configured as follows. For this reason, the polishing object itself can be rotated together with the rotation and reciprocation of the polishing pad to perform local polishing of the polishing object, and the amount of polishing varies due to the relative speed difference between the polishing pad and the polishing object. Thus, the local polishing target portion of the object to be polished can be uniformly corrected and polished to finish the target surface shape.

以下、図面を参照して本発明の好ましい実施形態について説明する。図1は本発明に係る研磨装置の代表例であるCMP装置1の概略構成を示している。このCMP装置1は、研磨対象物であるSiO2からなる矩形状のガラス板2の被研磨面の全体的な研磨(グローバル研磨)を行う研磨装置10と、ガラス板2の被研磨面の局所的な研磨(ローカル研磨)を行う副研磨装置20と、ガラス板2の被研磨面が研磨装置10及び副研磨装置20と対向するようにガラス板2を保持するガラス板保持装置30とを備えて構成されている。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a schematic configuration of a CMP apparatus 1 which is a typical example of a polishing apparatus according to the present invention. This CMP apparatus 1 includes a polishing apparatus 10 that performs overall polishing (global polishing) on a surface to be polished of a rectangular glass plate 2 made of SiO 2 that is an object to be polished, and a local area on the surface to be polished of the glass plate 2. And a glass plate holding device 30 for holding the glass plate 2 so that the surface to be polished of the glass plate 2 faces the polishing device 10 and the sub polishing device 20. Configured.

これら研磨装置10、副研磨装置20及びガラス板保持装置30は支持フレーム40に支持されている。支持フレーム40は、水平な基台41と、この基台41上にY方向(紙面に垂直な方向でこれを前後方向とする)に延びて設けられたレール(図示せず)上をY方向に移動自在に設けられた第1ステージ42と、この第1ステージ42から垂直(Z方向;紙面における上下方向)に延びるように設けられた垂直フレーム43と、この垂直フレーム43上をZ方向に移動自在に設けられた第2ステージ44と、この第2ステージ44から水平(X方向;紙面における左右方向)に延びるように設けられた水平フレーム45と、この水平フレーム45上をX方向に移動自在に設けられた第3ステージ46、第4ステージ47とを有して構成されている。   The polishing apparatus 10, the auxiliary polishing apparatus 20, and the glass plate holding apparatus 30 are supported by a support frame 40. The support frame 40 has a horizontal base 41 and a rail (not shown) provided on the base 41 so as to extend in the Y direction (the direction perpendicular to the paper surface is the front-rear direction). A first stage 42 that is movably provided in the vertical direction, a vertical frame 43 that is provided so as to extend vertically (Z direction; vertical direction in the drawing) from the first stage 42, and the vertical frame 43 on the Z direction. A second stage 44 provided movably, a horizontal frame 45 provided so as to extend horizontally from the second stage 44 (X direction; left and right direction on the paper surface), and moved on the horizontal frame 45 in the X direction. It has a third stage 46 and a fourth stage 47 that are freely provided.

第1ステージ42内には電動モータ等を駆動源とする第1駆動機構D1が設けられており、この第1駆動機構D1により第1ステージ42を上記レールに沿ってY方向に移動させることができる。また、第2ステージ44内には第2駆動機構D2が設けられており、この第2駆動機構D2により第2ステージ44を垂直フレーム43に沿ってZ方向に移動させることができる。さらに、第3ステージ46、第4ステージ47内にはそれぞれ第3駆動機構D3、第4駆動機構D4が設けられており、この駆動機構D3,D4により第3ステージ46、第4ステージ47を水平フレーム45に沿ってX方向に移動させることができる。このため、駆動機構D1,D3,D4の駆動制御を行ってそれぞれの動作を組み合わせることにより、第3ステージ46、第4ステージ47をガラス板保持装置30上方の任意のXY位置(水平位置)に移動させることが可能である。また、第2駆動機構D2の駆動制御を行うことにより、第3ステージ46、第4ステージ47を任意のZ位置(ガラス板保持装置30上方の高さ位置)に移動させることが可能である。なお、駆動機構D2,D3,D4は、第1駆動機構D1と同様に電動モータ等を駆動源として構成される。   A first drive mechanism D1 using an electric motor or the like as a drive source is provided in the first stage 42, and the first stage 42 can be moved in the Y direction along the rail by the first drive mechanism D1. it can. In addition, a second drive mechanism D2 is provided in the second stage 44, and the second stage 44 can be moved in the Z direction along the vertical frame 43 by the second drive mechanism D2. Further, a third drive mechanism D3 and a fourth drive mechanism D4 are provided in the third stage 46 and the fourth stage 47, respectively, and the third stage 46 and the fourth stage 47 are horizontally moved by the drive mechanisms D3 and D4. It can be moved in the X direction along the frame 45. For this reason, the third stage 46 and the fourth stage 47 are moved to an arbitrary XY position (horizontal position) above the glass plate holding device 30 by performing drive control of the drive mechanisms D1, D3, and D4 and combining the respective operations. It is possible to move. Further, by performing drive control of the second drive mechanism D2, the third stage 46 and the fourth stage 47 can be moved to any Z position (a height position above the glass plate holding device 30). The drive mechanisms D2, D3, and D4 are configured using an electric motor or the like as a drive source, similarly to the first drive mechanism D1.

研磨装置10は、第3ステージ46から下方に延びて設けられた研磨ヘッド回転軸11と、この研磨ヘッド回転軸11の下端部に取り付けられた研磨ヘッド12とから構成されている。この研磨ヘッド12の下面には、両面接着テープ等を用いて研磨パッド15が下面に貼り付けられた円盤状の支持プレート13が真空吸着されて取り付けられている。このため、真空吸着を解除して、研磨パッド15を支持プレート13とともに研磨ヘッド12から取り外して交換可能になっている。   The polishing apparatus 10 includes a polishing head rotating shaft 11 provided so as to extend downward from the third stage 46, and a polishing head 12 attached to a lower end portion of the polishing head rotating shaft 11. On the lower surface of the polishing head 12, a disk-like support plate 13 having a polishing pad 15 attached to the lower surface using a double-sided adhesive tape or the like is attached by vacuum suction. For this reason, the vacuum suction is released, and the polishing pad 15 can be removed from the polishing head 12 together with the support plate 13 and replaced.

研磨ヘッド回転軸11は、第3ステージ46内に設けられた電動モータ等を駆動源とする第5駆動機構D5によって回転し、これにより研磨ヘッド12を回転させて研磨パッド15の研磨面(ガラス板2の表面に当接して研磨を行う面)をXY面(水平面)内で回転させることができる。また、第3ステージ46には、エアシリンダ(図示せず)が内蔵されており、このエアシリンダにより研磨ヘッド回転軸11を介して研磨ヘッド12を上下動させて研磨パッド15の研磨面をガラス板2の被研磨面に所定の接触圧で押圧させることができる。   The polishing head rotating shaft 11 is rotated by a fifth drive mechanism D5 that uses an electric motor or the like provided in the third stage 46 as a drive source, whereby the polishing head 12 is rotated and the polishing surface (glass) of the polishing pad 15 is rotated. The surface that contacts the surface of the plate 2 and is polished can be rotated within the XY plane (horizontal plane). The third stage 46 includes an air cylinder (not shown), and the polishing head 12 is moved up and down via the polishing head rotating shaft 11 by the air cylinder so that the polishing surface of the polishing pad 15 is made of glass. The surface to be polished of the plate 2 can be pressed with a predetermined contact pressure.

研磨パッド15は、発泡性のポリウレタン等の発泡体樹脂材料を用いて支持プレート13とほぼ同じ外径を有する円盤状、もしくは中央に穴の開いた薄厚のドーナツ型等に形成されている。本実施形態では研磨パッド15は薄厚のドーナツ型である。研磨パッド15の研磨面には、格子状の溝が縦横にほぼ等間隔で形成されており、研磨加工の際に研磨剤(スラリー)の拡散が促進されるようになっている。   The polishing pad 15 is formed in a disk shape having substantially the same outer diameter as the support plate 13 using a foam resin material such as foaming polyurethane, or a thin donut shape having a hole in the center. In this embodiment, the polishing pad 15 is a thin donut shape. On the polishing surface of the polishing pad 15, lattice-like grooves are formed at substantially equal intervals in the vertical and horizontal directions, and the diffusion of the abrasive (slurry) is promoted during the polishing process.

副研磨装置20は、第4ステージ47から下方に延びて設けられた副研磨ヘッド回転軸21と、この副研磨ヘッド回転軸21の下端部に取り付けられた副研磨ヘッド22とから構成されている。この副研磨ヘッド22の下面には、両面接着テープ等を用いて副研磨パッド25が下面に貼り付けられた円盤状の副支持プレート23が真空吸着されて取り付けられている。このため、真空吸着を解除して、副研磨パッド25を副支持プレート23とともに副研磨ヘッド22から取り外して交換可能になっている。   The sub-polishing apparatus 20 includes a sub-polishing head rotating shaft 21 that extends downward from the fourth stage 47 and a sub-polishing head 22 that is attached to the lower end of the sub-polishing head rotating shaft 21. . On the lower surface of the sub-polishing head 22, a disk-shaped sub-support plate 23 having a sub-polishing pad 25 attached to the lower surface using a double-sided adhesive tape or the like is attached by vacuum suction. For this reason, the vacuum suction is released, and the auxiliary polishing pad 25 is detached from the auxiliary polishing head 22 together with the auxiliary support plate 23 and can be replaced.

副研磨ヘッド回転軸21は、第4ステージ47内に設けられた電動モータ等を駆動源とする第6駆動機構D6によって回転し、これにより副研磨ヘッド22を回転させて副研磨パッド25の研磨面(ガラス板2の表面に当接して研磨を行う面)をXY面(水平面)内で回転させることができる。また、第4ステージ47には、エアシリンダ(図示せず)が内蔵されており、このエアシリンダにより副研磨ヘッド回転軸21を介して副研磨ヘッド22を上下動させて副研磨パッド25の研磨面をガラス板2の被研磨面に所定の接触圧で押圧させることができる。   The secondary polishing head rotating shaft 21 is rotated by a sixth drive mechanism D6 that uses an electric motor or the like provided in the fourth stage 47 as a drive source, thereby rotating the secondary polishing head 22 to polish the secondary polishing pad 25. The surface (the surface on which the surface of the glass plate 2 is abutted and polished) can be rotated within the XY plane (horizontal plane). Further, the fourth stage 47 incorporates an air cylinder (not shown), and the auxiliary polishing head 22 is moved up and down by the air cylinder via the auxiliary polishing head rotating shaft 21 to polish the auxiliary polishing pad 25. The surface can be pressed against the surface to be polished of the glass plate 2 with a predetermined contact pressure.

副研磨パッド25は、発泡性のポリウレタン等の発泡体樹脂材料を用いて副支持プレート23とほぼ同じ外径を有する円盤状、もしくは中央に穴の開いた薄厚のドーナツ型等に形成されている。本実施形態では副研磨パッド25は薄厚のドーナツ型である。副研磨パッド25の研磨面には、格子状の溝が縦横にほぼ等間隔で形成されており、研磨加工の際に研磨剤(スラリー)の拡散が促進されるようになっている。なお、この副研磨パッド25は、先に述べた研磨パッド15よりも小径であり、研磨ヘッド12(研磨装置10)に比べてガラス板2の表面を局所的に研磨することができる。   The secondary polishing pad 25 is formed in a disk shape having the same outer diameter as the secondary support plate 23 using a foam resin material such as foamable polyurethane, or a thin donut shape having a hole in the center. . In this embodiment, the auxiliary polishing pad 25 is a thin donut shape. On the polishing surface of the secondary polishing pad 25, lattice-like grooves are formed at substantially equal intervals in the vertical and horizontal directions, so that the diffusion of the abrasive (slurry) is promoted during the polishing process. The sub-polishing pad 25 has a smaller diameter than the polishing pad 15 described above, and can locally polish the surface of the glass plate 2 as compared with the polishing head 12 (polishing apparatus 10).

ガラス板保持装置30は、基台41上に設けられた回転台支持部31と、回転台支持部31から上方に垂直に延びて設けられたチャック回転軸32と、チャック回転軸32の上端部に水平に取り付けられたチャック回転台33と、チャック回転台33上に設けられてチャック回転台33の上面に沿ってY軸方向に移動するチャックY軸移動台34と、チャックY軸移動台34上に設けられてチャックY軸移動台34の上面に沿ってX方向に移動するチャックX軸移動台35と、チャックX軸移動台35上に設けられてガラス板2を上面側に保持する真空チャック36とを備えて構成されている。   The glass plate holding device 30 includes a turntable support portion 31 provided on a base 41, a chuck rotation shaft 32 provided vertically extending from the turntable support portion 31, and an upper end portion of the chuck rotation shaft 32. A chuck turntable 33 horizontally mounted on the chuck turntable 33, a chuck Y axis move stand 34 provided on the chuck turntable 33 and moving in the Y axis direction along the upper surface of the chuck turntable 33, and a chuck Y axis move stand 34. A chuck X-axis moving table 35 that moves in the X direction along the upper surface of the chuck Y-axis moving table 34 and a vacuum that is provided on the chuck X-axis moving table 35 and holds the glass plate 2 on the upper surface side. And a chuck 36.

真空チャック36内には図示しない真空吸着チャック機構が設けられており、この真空吸着チャック機構によりガラス板2を着脱自在に吸着保持するようになっている。回転台支持部31内には電動モータ等を駆動源とする第7駆動機構D7が設けられており、回転台支持部31から延びて設けられたチャック回転軸32は、この第7駆動機構D7によって回転し、これによりチャック回転台33を回転させることができる。   A vacuum suction chuck mechanism (not shown) is provided in the vacuum chuck 36, and the glass plate 2 is detachably sucked and held by the vacuum suction chuck mechanism. A seventh drive mechanism D7 having an electric motor or the like as a drive source is provided in the turntable support portion 31, and a chuck rotation shaft 32 provided extending from the turntable support portion 31 is provided with the seventh drive mechanism D7. Thus, the chuck turntable 33 can be rotated.

図2に示すように、チャック回転台33上には、Y方向に延びる一対のレール37,37が設けられている。チャックY軸移動台34内には電動モータ等を駆動源とする第8駆動機構D8が設けられており、チャックY軸移動台34は、この第8駆動機構D8によってチャック回転台33上に設けられたレール37,37に沿ってY軸方向に移動させることができる。また、チャックY軸移動台34上には、X方向に延びる一対のレール38,38が設けられている。チャックX軸移動台35内には電動モータ等を駆動源とする第9駆動機構D9が設けられており、チャックX軸移動台35は、この第9駆動機構D9によってチャックY軸移動台34上に設けられたレール38,38に沿ってX軸方向に移動させることができる。このため、駆動機構D8,D9の駆動制御を行ってチャックY軸移動台34,チャックX軸移動台35の動作を組み合わせることにより、チャックX軸移動台35上に設けられた真空チャック36及びこの真空チャック36の上面に吸着保持されたガラス板2を任意のXY位置(水平位置)に移動させることができる。   As shown in FIG. 2, a pair of rails 37, 37 extending in the Y direction are provided on the chuck turntable 33. An eighth drive mechanism D8 using an electric motor or the like as a drive source is provided in the chuck Y-axis moving table 34. The chuck Y-axis moving table 34 is provided on the chuck rotating table 33 by the eighth drive mechanism D8. It can be moved in the Y-axis direction along the rails 37, 37. A pair of rails 38, 38 extending in the X direction are provided on the chuck Y-axis moving table 34. A ninth drive mechanism D9 using an electric motor or the like as a drive source is provided in the chuck X-axis moving table 35. The chuck X-axis moving table 35 is placed on the chuck Y-axis moving table 34 by the ninth drive mechanism D9. Can be moved in the X-axis direction along rails 38, 38 provided on the X-axis. Therefore, by controlling the driving mechanisms D8 and D9 to combine the operations of the chuck Y-axis moving table 34 and the chuck X-axis moving table 35, the vacuum chuck 36 provided on the chuck X-axis moving table 35 and this The glass plate 2 sucked and held on the upper surface of the vacuum chuck 36 can be moved to an arbitrary XY position (horizontal position).

次に、以上のように構成されたCMP装置1において、ガラス板2の被研磨面の全体的な研磨(グローバル研磨)、及びガラス板2の被研磨面の局所的な研磨(ローカル研磨)の研磨方法について説明する。   Next, in the CMP apparatus 1 configured as described above, the overall polishing of the polished surface of the glass plate 2 (global polishing) and the local polishing of the polished surface of the glass plate 2 (local polishing) are performed. A polishing method will be described.

研磨装置10を用いてガラス板2の被研磨面の全体的な研磨(グローバル研磨)を行うには、まず、ガラス板保持装置30における真空チャック36の上面に研磨対象となるガラス板2を吸着して取り付ける。次に、駆動機構D8,D9によりチャックY軸移動台34、チャックX軸移動台35をそれぞれ移動させ、ガラス板2の略中心とチャック回転軸32の回転軸とが重なるように、チャックX軸移動台35上に設けられた真空チャック36及びこの真空チャック36の上面に保持されたガラス板2をXY面内で移動させる。そして、第7駆動機構D7によりチャック回転軸32を介してチャック回転台33を回転させる。すなわち、第7駆動機構D7によりチャック回転台33を回転させ、チャック回転台33上に設けられたチャックY軸移動台34、チャックX軸移動台35、及び真空チャック36とともに、ガラス板2の略中心とチャック回転軸32の回転軸とが重なる状態でガラス板2を回転させる。   In order to perform overall polishing (global polishing) of the surface to be polished of the glass plate 2 using the polishing apparatus 10, first, the glass plate 2 to be polished is adsorbed on the upper surface of the vacuum chuck 36 in the glass plate holding apparatus 30. And attach. Next, the chuck Y-axis moving table 34 and the chuck X-axis moving table 35 are moved by the driving mechanisms D8 and D9, respectively, so that the approximate center of the glass plate 2 and the rotating shaft of the chuck rotating shaft 32 overlap each other. The vacuum chuck 36 provided on the moving table 35 and the glass plate 2 held on the upper surface of the vacuum chuck 36 are moved in the XY plane. Then, the chuck rotating base 33 is rotated by the seventh drive mechanism D7 via the chuck rotating shaft 32. In other words, the chuck rotating base 33 is rotated by the seventh drive mechanism D 7, and the glass Y 2 is moved together with the chuck Y-axis moving base 34, the chuck X-axis moving base 35 and the vacuum chuck 36 provided on the chuck rotating base 33. The glass plate 2 is rotated in a state where the center and the rotation shaft of the chuck rotation shaft 32 overlap.

続いて、駆動機構D1,D3により第3ステージ46を移動させて研磨ヘッド12をガラス板2の上方に位置させ、第5駆動機構D5により研磨ヘッド回転軸11を介して研磨ヘッド12を回転させる。次に、第2駆動機構D2により第2ステージ44をZ方向に移動させて研磨パッド15の研磨面をガラス板2の被研磨面と近接するように位置させ、第3ステージ46に内蔵されたエアシリンダ(図示せず)を用いて研磨ヘッド12を降下させ、研磨パッド15の研磨面をガラス板2の被研磨面に所定の接触圧で押圧させる。そして、第3駆動機構D3により第3ステージ46を水平フレーム45に沿って往復動させる、すなわち研磨ヘッド12(研磨パッド15の研磨面)をX方向に往復動させる。このとき、図示しない研磨剤供給装置より研磨剤を圧送し、研磨パッド15の研磨面の下側に研磨剤を供給させる。これにより、ガラス板2の被研磨面は、研磨剤の供給を受けつつガラス板2自体の回転運動と研磨ヘッド12(研磨パッド15)の回転及び往復動とにより全体的に研磨される。   Subsequently, the third stage 46 is moved by the driving mechanisms D1 and D3 so that the polishing head 12 is positioned above the glass plate 2, and the polishing head 12 is rotated via the polishing head rotating shaft 11 by the fifth driving mechanism D5. . Next, the second stage 44 is moved in the Z direction by the second drive mechanism D2 so that the polishing surface of the polishing pad 15 is positioned close to the surface to be polished of the glass plate 2, and is incorporated in the third stage 46. The polishing head 12 is lowered using an air cylinder (not shown), and the polishing surface of the polishing pad 15 is pressed against the surface to be polished of the glass plate 2 with a predetermined contact pressure. Then, the third stage 46 is reciprocated along the horizontal frame 45 by the third drive mechanism D3, that is, the polishing head 12 (the polishing surface of the polishing pad 15) is reciprocated in the X direction. At this time, the polishing agent is pumped from a polishing agent supply device (not shown) to supply the polishing agent to the lower side of the polishing surface of the polishing pad 15. Thus, the surface to be polished of the glass plate 2 is entirely polished by the rotational movement of the glass plate 2 itself and the rotation and reciprocation of the polishing head 12 (polishing pad 15) while being supplied with the abrasive.

このように研磨装置10を用いてガラス板2の被研磨面の全体的な研磨(グローバル研磨)を行ったときには、ガラス板2の被研磨面に局所的な凹凸部が残る可能性があり、この凹凸部を修正するために副研磨装置20を用いてガラス板2の被研磨面の局所的な研磨(ローカル研磨)が行われる。なお、副研磨装置20によるローカル研磨は、研磨装置10によるグローバル研磨の後に行われる場合に限らず、何らかの要因によって生じた局所的な凹凸部を修正するために行われる。なお、本実施形態では副研磨装置20によるローカル研磨は、図2(a)に示すガラス板2の被研磨面に存在する局部である凸部Aの修正研磨について説明する。   In this way, when the entire surface to be polished (global polishing) of the glass plate 2 is polished using the polishing apparatus 10, local uneven portions may remain on the surface to be polished of the glass plate 2, In order to correct the uneven portion, local polishing (local polishing) of the surface to be polished of the glass plate 2 is performed using the sub polishing apparatus 20. The local polishing by the sub polishing apparatus 20 is not limited to the case where the local polishing is performed after the global polishing by the polishing apparatus 10 but is performed to correct a local uneven portion caused by some factor. In the present embodiment, the local polishing by the sub polishing apparatus 20 will be described with reference to the correction polishing of the convex portion A which is a local portion existing on the surface to be polished of the glass plate 2 shown in FIG.

副研磨装置20を用いたガラス板2の被研磨面の局所的な研磨(ローカル研磨)では、図2に示すように、まず、駆動機構D8,D9によりチャックY軸移動台34、チャックX軸移動台35をそれぞれ移動させ、ガラス板2の凸部Aの頂点とチャック回転軸32の回転軸とが重なるように、チャックX軸移動台35上に設けられた真空チャック36及び真空チャック36の上面に保持されたガラス板2をXY面内で移動させる。次に、第7駆動機構D7によりチャック回転軸32を介してチャック回転台33を回転させる。すなわち、第7駆動機構D7によりチャック回転台33を回転させ、チャック回転台33上に設けられたチャックY軸移動台34、チャックX軸移動台35、及び真空チャック36とともに、ガラス板2の凸部Aの頂点とチャック回転軸32の回転軸とが重なる状態でガラス板2を回転させる。このとき、ガラス板2の凸部Aの頂点(副研磨装置20を用いて最も積極的に研磨を行うべき被研磨面の位置)を中心に回転する状態となる。   In local polishing (local polishing) of the surface to be polished of the glass plate 2 using the sub-polishing apparatus 20, first, as shown in FIG. 2, the chuck Y-axis moving table 34, the chuck X-axis are driven by the drive mechanisms D8 and D9. The moving table 35 is moved, and the vacuum chuck 36 and the vacuum chuck 36 provided on the chuck X-axis moving table 35 so that the apex of the convex portion A of the glass plate 2 and the rotating shaft of the chuck rotating shaft 32 overlap each other. The glass plate 2 held on the upper surface is moved in the XY plane. Next, the chuck rotating base 33 is rotated via the chuck rotating shaft 32 by the seventh drive mechanism D7. That is, the chuck rotating base 33 is rotated by the seventh drive mechanism D 7, and the convexity of the glass plate 2 is brought together with the chuck Y-axis moving base 34, the chuck X-axis moving base 35 and the vacuum chuck 36 provided on the chuck rotating base 33. The glass plate 2 is rotated in a state where the apex of the part A and the rotation shaft of the chuck rotation shaft 32 overlap. At this time, the glass plate 2 is rotated around the apex of the convex portion A of the glass plate 2 (the position of the surface to be polished that should be most actively polished using the sub polishing apparatus 20).

続いて、副研磨装置20の副研磨ヘッド22(副研磨パッド25の研磨面)がガラス板2の凸部Aと上下に対向するように、駆動機構D1,D4により第4ステージ47をガラス板2の上方に位置させる。このとき、副研磨ヘッド回転軸21の回転軸とチャック回転軸32の回転軸とが一致する状態、すなわち両者の一致した回転軸がガラス板2の凸部Aの頂点と重なる状態となる。そして、第6駆動機構D6により副研磨ヘッド回転軸21を介して副研磨ヘッド22を回転させる。   Subsequently, the fourth stage 47 is moved to the glass plate by the driving mechanisms D1 and D4 so that the sub-polishing head 22 (the polishing surface of the sub-polishing pad 25) of the sub-polishing apparatus 20 faces the convex portion A of the glass plate 2 vertically. 2 above. At this time, the rotation axis of the auxiliary polishing head rotation shaft 21 and the rotation shaft of the chuck rotation shaft 32 coincide with each other, that is, the rotation axis where both coincide with each other overlaps the apex of the convex portion A of the glass plate 2. Then, the auxiliary polishing head 22 is rotated by the sixth drive mechanism D6 via the auxiliary polishing head rotating shaft 21.

次に、第2駆動機構D2により第2ステージ44をZ方向に移動させて副研磨パッド25の研磨面をガラス板2の凸部Aと近接するように位置させ、第4ステージ47に内蔵されたエアシリンダ(図示せず)を用いて副研磨ヘッド22を降下させ、副研磨パッド25の研磨面をガラス板2の凸部Aに所定の接触圧で押圧させる。そして、第4駆動機構D4により第4ステージ47を水平フレーム45に沿って往復動させる。すなわち、副研磨ヘッド回転軸21の回転軸と凸部Aの頂点とが重なる位置が往復動ストロークの一端となるように、副研磨ヘッド22(副研磨パッド25の研磨面)をX方向に往復動させる。このとき、図示しない研磨剤供給装置より研磨剤を圧送し、副研磨パッド25の研磨面の下側に研磨剤を供給させる。これにより、ガラス板2の凸部Aは、研磨剤の供給を受けつつ副研磨ヘッド22(副研磨パッド25)の回転及び往復動とともにガラス板2自体の回転運動により研磨される。   Next, the second stage 44 is moved in the Z direction by the second drive mechanism D2 so that the polishing surface of the sub-polishing pad 25 is positioned so as to be close to the convex portion A of the glass plate 2, and is incorporated in the fourth stage 47. The secondary polishing head 22 is lowered using an air cylinder (not shown), and the polishing surface of the secondary polishing pad 25 is pressed against the convex portion A of the glass plate 2 with a predetermined contact pressure. Then, the fourth stage 47 is reciprocated along the horizontal frame 45 by the fourth drive mechanism D4. That is, the auxiliary polishing head 22 (the polishing surface of the auxiliary polishing pad 25) is reciprocated in the X direction so that the position where the rotation axis of the auxiliary polishing head rotating shaft 21 and the apex of the convex portion A overlap is one end of the reciprocating stroke. Move. At this time, the polishing agent is pumped from a polishing agent supply device (not shown) to supply the polishing agent to the lower side of the polishing surface of the auxiliary polishing pad 25. Thereby, the convex part A of the glass plate 2 is polished by the rotational movement of the glass plate 2 itself together with the rotation and reciprocation of the sub-polishing head 22 (sub-polishing pad 25) while being supplied with the abrasive.

図3は、副研磨装置20を用いてガラス板2の被研磨面の局所的な研磨(ローカル研磨)を行ったときの、副研磨ヘッド22の往復動ストロークを変化させる毎に研磨量の分布を計算したシミュレーションデータである。また図3は、横軸に凸部Aの頂点を0とするガラス板2上のX方向(副研磨ヘッド22の往復動方向)の位置、縦軸に研磨量をとり、往復動ストロークを変化させる毎にガラス板2の被研磨面における研磨量の分布をプロットしたグラフである。なお研磨条件は、副研磨パッド25の形状が外径36mm,内径5mm、副研磨パッド25及びガラス板2の回転速度が150rpm/11rpmである。また、副研磨ヘッド22の往復動ストロークSTは、ST=36mm(副研磨パッド25の外径)×K(係数)で算出され、K=0.1〜0.8の範囲で変化させている。なお、副研磨パッド22は、副研磨パッド22の中心と凸部Aの頂点(図3における横軸の0の位置)とが重なる位置が往復動ストロークSTの一端となるようにX方向に往復動し、且つガラス板2は凸部Aの頂点を中心に回転する。したがって、副研磨装置20によるガラス板2上の研磨範囲は、凸部Aの頂点(図3における横軸の0の位置)を中心とする半径R(R=往復動ストロークST+18mm(副研磨パッド22の外径×1/2))の円状となる。   FIG. 3 shows the distribution of the polishing amount every time the reciprocating stroke of the secondary polishing head 22 is changed when local polishing (local polishing) of the surface to be polished of the glass plate 2 is performed using the secondary polishing apparatus 20. Is the simulation data calculated. FIG. 3 shows the position in the X direction (reciprocating direction of the sub-polishing head 22) on the glass plate 2 where the apex of the convex portion A is 0 on the horizontal axis, and the amount of polishing on the vertical axis. It is the graph which plotted distribution of the polish amount in the to-be-polished surface of the glass plate 2 whenever it makes it. The polishing conditions are such that the shape of the auxiliary polishing pad 25 is an outer diameter of 36 mm and an inner diameter of 5 mm, and the rotation speed of the auxiliary polishing pad 25 and the glass plate 2 is 150 rpm / 11 rpm. The reciprocating stroke ST of the sub-polishing head 22 is calculated by ST = 36 mm (outer diameter of the sub-polishing pad 25) × K (coefficient), and is varied in the range of K = 0.1 to 0.8. The sub-polishing pad 22 reciprocates in the X direction so that the position where the center of the sub-polishing pad 22 and the apex of the protrusion A (the position of 0 on the horizontal axis in FIG. 3) overlap is one end of the reciprocating stroke ST. The glass plate 2 moves around the vertex of the convex portion A. Therefore, the polishing range on the glass plate 2 by the sub-polishing apparatus 20 is a radius R (R = reciprocating stroke ST + 18 mm (sub-polishing pad 22) centered on the apex of the convex portion A (position 0 on the horizontal axis in FIG. 3). The outer diameter x 1/2)).

これらの計算したシミュレーションデータを比較すると、係数K=0.1〜0.3(往復動ストロークST=3.6〜10.8mm)のときには、ガラス板2の凸部Aの頂点近傍で研磨量が極端に低下する部分(図3のグラフにおける特異点)が見られる。すなわち、係数K=0.1〜0.3の場合には、最も研磨すべきガラス板2の凸部Aの頂点が積極的に研磨されない。しかしながら、係数K=0.4〜0.8(往復動ストロークST=14.4〜28.8mm)のときには、ガラス板2の凸部Aの頂点近傍における研磨量が極端に低下する部分(図3のグラフにおける特異点)はほぼ見られなくなる。したがって、副研磨装置20を用いたガラス板2の被研磨面の局所的な研磨(ローカル研磨)では、係数K=0.4以上、すなわち副研磨パッド25の外径の0.4倍以上の往復動ストロークSTで副研磨ヘッド22を往復動させることが良い。   Comparing these calculated simulation data, when the coefficient K = 0.1 to 0.3 (reciprocating stroke ST = 3.6 to 10.8 mm), the portion where the polishing amount extremely decreases in the vicinity of the apex of the convex portion A of the glass plate 2 ( A singular point in the graph of FIG. 3 is seen. That is, when the coefficient K = 0.1 to 0.3, the apex of the convex portion A of the glass plate 2 to be polished most is not actively polished. However, when the coefficient K = 0.4 to 0.8 (reciprocating stroke ST = 14.4 to 28.8 mm), the portion where the polishing amount near the apex of the convex portion A of the glass plate 2 is extremely reduced (singular point in the graph of FIG. 3). Almost disappear. Therefore, in local polishing (local polishing) of the surface to be polished of the glass plate 2 using the sub-polishing apparatus 20, a reciprocating stroke ST having a coefficient K = 0.4 or more, that is, 0.4 times or more of the outer diameter of the sub-polishing pad 25. It is preferable to reciprocate the auxiliary polishing head 22.

ガラス板2の凸部Aの位置の検出は、光学的検出器でガラス板2の被研磨面を走査して行うことができる。例えば、前記特許文献1に記載されるように、副研磨装置20を構成する副研磨ヘッド回転軸21、副研磨ヘッド22、副支持プレート23及び副研磨パッド25の中心部に空洞を形成し、この空洞に光学的検出器につながった光ファイバーを設ける。駆動機構D1,D4により副研磨装置20をガラス板2の上方においてXY面内で移動させることにより、光学的検出器でガラス板2の被研磨面を走査し、ガラス板2の被研磨面における凸部Aの存在する位置を検出することができる。このように副研磨装置20に光学的検出器を設ける場合によれば、ガラス板2の被研磨面において凸部Aを検出したら、直ちにその凸部Aを研磨して平坦化できる利点を有する。なお、光学的検出器は副研磨装置20と別に設けても構わない。その場合は、ガラス板2の被研磨面全体において凸部Aの検出を行って、この凸部Aが存在する位置を記憶しておく必要がある。   The position of the convex portion A of the glass plate 2 can be detected by scanning the surface to be polished of the glass plate 2 with an optical detector. For example, as described in Patent Document 1, a cavity is formed in the center of the secondary polishing head rotating shaft 21, the secondary polishing head 22, the secondary support plate 23, and the secondary polishing pad 25 constituting the secondary polishing apparatus 20, An optical fiber connected to an optical detector is provided in this cavity. By moving the auxiliary polishing apparatus 20 in the XY plane above the glass plate 2 by the driving mechanisms D1 and D4, the surface to be polished of the glass plate 2 is scanned by the optical detector, and the surface of the glass plate 2 to be polished is scanned. The position where the convex part A exists can be detected. Thus, according to the case where the sub-polishing apparatus 20 is provided with the optical detector, when the convex portion A is detected on the surface to be polished of the glass plate 2, there is an advantage that the convex portion A can be immediately polished and flattened. The optical detector may be provided separately from the sub polishing apparatus 20. In that case, it is necessary to detect the projection A on the entire surface to be polished of the glass plate 2 and store the position where the projection A exists.

以上のようにして、CMP装置1では、ガラス板2の局所的な凸部Aの研磨(ローカル研磨)を行うときに、駆動機構D8,D9によりチャックY軸移動台34、チャックX軸移動台35をそれぞれ移動させてガラス板2の凸部Aの頂点とチャック回転軸32の回転軸とが重なるように位置させることができる。このため、副研磨ヘッド回転軸21の回転軸とチャック回転軸32の回転軸とが一致する状態、すなわち両者の一致した回転軸がガラス板2の凸部Aの頂点と重なる状態で、副研磨ヘッド22(副研磨パッド25)の回転及び往復動とともに、ガラス板2自体を凸部Aの頂点を中心として回転運動させてガラス板2の凸部Aを研磨することができるので、副研磨ヘッド22(副研磨パッド25)とガラス板2との相対速度の違いによる研磨量のバラツキの影響を小さくして、ガラス板2の局所的な凸部Aを均一に研磨して目的の面形状に仕上げることができる。   As described above, in the CMP apparatus 1, the chuck Y-axis moving table 34 and the chuck X-axis moving table are driven by the driving mechanisms D8 and D9 when the local projection A of the glass plate 2 is polished (local polishing). 35 can be moved so that the apex of the convex portion A of the glass plate 2 and the rotation shaft of the chuck rotation shaft 32 overlap each other. For this reason, the auxiliary polishing head rotating shaft 21 and the chuck rotating shaft 32 are in a state in which the rotating shaft coincides with the rotating shaft of the chuck rotating shaft 32, that is, in a state in which the rotating shaft that coincides with the apex of the convex portion A of the glass plate 2. As the head 22 (sub-polishing pad 25) rotates and reciprocates, the glass plate 2 itself can be rotated about the apex of the convex portion A to polish the convex portion A of the glass plate 2, so that the sub-polishing head 22 (sub-polishing pad 25) and the influence of the variation in polishing amount due to the difference in relative speed between the glass plate 2 is reduced, and the local convex portion A of the glass plate 2 is uniformly polished to the target surface shape. Can be finished.

さらに、副研磨装置20を用いてガラス板2の局所的な凸部Aの研磨(ローカル研磨)では、副研磨パッド25の外径の0.4倍以上の往復動ストロークSTで副研磨ヘッド22を往復動させることで、ガラス板2の凸部Aの頂点近傍において研磨量が極端に低下することを避けることができ、ガラス板2の局所的な凸部Aを均一に研磨して目的の面形状に仕上げることができる。   Further, in the local polishing (local polishing) of the convex portion A of the glass plate 2 using the auxiliary polishing apparatus 20, the auxiliary polishing head 22 is reciprocated with a reciprocating stroke ST of 0.4 times or more the outer diameter of the auxiliary polishing pad 25. By moving, it can be avoided that the polishing amount is extremely reduced in the vicinity of the apex of the convex portion A of the glass plate 2, and the local convex portion A of the glass plate 2 is uniformly polished to obtain the desired surface shape. Can be finished.

本発明に係る研磨装置の一例であるCMP装置を示す正面図である。It is a front view which shows the CMP apparatus which is an example of the grinding | polishing apparatus which concerns on this invention. 上記CMP装置を構成する副研磨装置を用いたローカル研磨を説明する図である。It is a figure explaining the local grinding | polishing using the subpolishing apparatus which comprises the said CMP apparatus. 上記副研磨装置を構成する副研磨ヘッドの往復動ストロークを変化させる毎にガラス板の被研磨面における研磨量の分布を計算したシミュレーションデータである。It is the simulation data which calculated distribution of the polishing amount in the to-be-polished surface of a glass plate every time the reciprocation stroke of the sub-polishing head which comprises the said sub-polishing apparatus is changed.

符号の説明Explanation of symbols

A 凸部(研磨対象部)
1 CMP装置(研磨装置)
2 ガラス板(研磨対象物)
20 副研磨装置(研磨機構)
21 副研磨ヘッド回転軸
25 研磨パッド(研磨パッド)
32 チャック回転軸
33 チャック回転台(回転部材)
34 チャックY軸移動台(保持部材移動機構)
35 チャックX軸移動台(保持部材移動機構)
36 真空チャック(保持部材)
A Convex (polishing target)
1 CMP equipment (polishing equipment)
2 Glass plate (object to be polished)
20 Sub-polishing device (polishing mechanism)
21 Sub-polishing head rotating shaft 25 Polishing pad (polishing pad)
32 Chuck rotating shaft 33 Chuck rotating base (rotating member)
34 Chuck Y-axis moving table (holding member moving mechanism)
35 Chuck X-axis moving table (holding member moving mechanism)
36 Vacuum chuck (holding member)

Claims (3)

研磨対象物を保持する保持部材と、
前記保持部材に保持された研磨対象物の研磨対象面と対向するとともに前記研磨対象面の局所的な研磨を行うに適した小径の研磨面を有する研磨パッドを備え、前記研磨パッドを自転及び往復動させながら前記研磨面を前記研磨対象面の研磨対象部に当接させて前記研磨対象部の研磨を行う研磨機構と、
前記保持部材を支持して回転可能であり、その回転軸が前記研磨パッドの往復動軌跡と略交差するように設けられた回転部材と、
前記回転部材に対して前記保持部材を前記回転軸に垂直な面内で移動させる保持部材移動機構とを備え、
前記保持部材移動機構により前記保持部材を前記回転部材上で移動させて前記保持部材により保持した研磨対象物の研磨対象部を前記回転部材の回転軸と重なるように位置させ、前記回転部材を回転させて前記保持部材及び前記研磨対象物を前記回転軸を中心として回転させ、前記研磨パッドを自転及び往復動させながら前記研磨対象物の研磨対象面に当接させて前記研磨対象部の研磨を行うことを特徴とする研磨装置。
A holding member for holding an object to be polished;
A polishing pad having a small-diameter polishing surface suitable for performing local polishing of the polishing target surface while facing the polishing target surface of the polishing target held by the holding member; and rotating and reciprocating the polishing pad A polishing mechanism for polishing the polishing target part by bringing the polishing surface into contact with the polishing target part of the polishing target surface while moving;
A rotating member that is rotatable so as to support the holding member and whose rotation axis substantially intersects the reciprocating locus of the polishing pad;
A holding member moving mechanism for moving the holding member in a plane perpendicular to the rotation axis with respect to the rotating member;
The holding member is moved on the rotating member by the holding member moving mechanism, the polishing target portion of the polishing object held by the holding member is positioned so as to overlap the rotation axis of the rotating member, and the rotating member is rotated. The holding member and the polishing object are rotated about the rotation axis, and the polishing pad is brought into contact with the polishing object surface of the polishing object while rotating and reciprocating, thereby polishing the polishing object part. Polishing apparatus characterized by performing.
前記研磨機構は、前記研磨パッドの外径の0.4倍以上の往復動ストロークで前記研磨パッドを往復動させることを特徴とする請求項1に記載の研磨装置。   The polishing apparatus according to claim 1, wherein the polishing mechanism reciprocates the polishing pad with a reciprocating stroke of 0.4 times or more the outer diameter of the polishing pad. 前記研磨対象物はSiO2からなる矩形状のガラス板であり、
請求項1もしくは請求項2に記載の研磨装置を用いて前記ガラス板の研磨対象部を研磨する研磨方法。
It said polishing object has a rectangular shape glass plate made of SiO 2,
The grinding | polishing method which grind | polishes the grinding | polishing object part of the said glass plate using the grinding | polishing apparatus of Claim 1 or Claim 2.
JP2007151167A 2007-06-07 2007-06-07 Polishing apparatus and polishing method Active JP5093650B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012143822A (en) * 2011-01-07 2012-08-02 Asahi Glass Co Ltd Polishing apparatus
JP2013535350A (en) * 2010-08-18 2013-09-12 エルジー・ケム・リミテッド Polishing pad for polishing system
CN106141902A (en) * 2015-05-14 2016-11-23 株式会社迪思科 Lapping device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1133898A (en) * 1997-07-18 1999-02-09 Nikon Corp Grinding device
JP2003311613A (en) * 2002-04-18 2003-11-05 Disco Abrasive Syst Ltd Polishing device
JP2005014119A (en) * 2003-06-24 2005-01-20 Noritake Co Ltd High flatness processing method and high flatness processing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1133898A (en) * 1997-07-18 1999-02-09 Nikon Corp Grinding device
JP2003311613A (en) * 2002-04-18 2003-11-05 Disco Abrasive Syst Ltd Polishing device
JP2005014119A (en) * 2003-06-24 2005-01-20 Noritake Co Ltd High flatness processing method and high flatness processing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013535350A (en) * 2010-08-18 2013-09-12 エルジー・ケム・リミテッド Polishing pad for polishing system
JP2012143822A (en) * 2011-01-07 2012-08-02 Asahi Glass Co Ltd Polishing apparatus
CN106141902A (en) * 2015-05-14 2016-11-23 株式会社迪思科 Lapping device
CN106141902B (en) * 2015-05-14 2019-07-30 株式会社迪思科 Grinding device

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