TW201642371A - 烘烤設備和烘烤方法 - Google Patents
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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Abstract
本發明提供了一種烘烤晶圓的烘烤設備。烘烤設備包括配置來支撐晶圓的一晶圓卡盤,以及設置在晶圓卡盤之上且配置來加熱晶圓的一加熱裝置。烘烤設備亦包括一承載臂配置來傳送晶圓至晶圓卡盤。當晶圓被晶圓卡盤支撐時,晶圓卡盤物理接觸晶圓之底面的中央區域。
Description
本發明是關於一種烘烤設備和烘烤方法。
半導體裝置已用於如個人電腦、行動電話、數位相機及其他電子設備之多種電子應用之中。半導體裝置通常藉由依序於晶圓上沉積絕緣或介電膜層、導電膜層與半導體膜層、以及藉由微影製程圖案化上述膜層而於其上形成電子構件與元件所形成。於單一晶圓上通常可製作出數個積體電路,並可藉由沿著位於此些積體電路間之切割道而將此晶圓切割成為獨立之數個晶粒(die)。此些晶粒例如通常分別地封裝成為一多重晶片模組(multi-chip modules)或其他形態之封裝物。
在微影製程中,光刻膠被應用於晶圓。於半導體製造過程中,薄層的光刻膠散布在晶圓的表面,且光刻膠被曝光和顯影以形成一圖案。現今顯影之圖案具有非常精細的細節,且在微影製程中一些問題會使顯影之光刻膠產生不理想之缺陷。
儘管用於微影製程的現有儀器和方法通常尚可達到其預期目的,但並不是在所有方面都完全符合要求。因此,微影製程中晶圓之光刻膠的品質改善方法期望被提供出來。
一些實施例提供了一種烘烤晶圓的烘烤設備。烘
烤設備包括配置來支撐晶圓的一晶圓卡盤,以及設置在晶圓卡盤之上且配置來加熱晶圓的一加熱裝置。烘烤設備亦包括一承載臂配置來傳送晶圓至晶圓卡盤。當晶圓被晶圓卡盤支撐時,晶圓卡盤接觸晶圓之底面的中央區域。
一些實施例提供了一種烘烤晶圓的烘烤設備。烘烤設備包括配置來支撐晶圓的一晶圓卡盤,以及設置在晶圓卡盤之上且配置來加熱晶圓的一加熱裝置。當晶圓被加熱裝置加熱時,晶圓被晶圓卡盤旋轉。
一些實施例提供了一種烘烤晶圓的烘烤方法。烘烤方法包括藉由承載臂傳送晶圓至晶圓卡盤,以及藉由升起晶圓卡盤放置晶圓於晶圓卡盤上。烘烤方法亦包括藉由晶圓卡盤升起晶圓鄰近加熱裝置,以及藉由加熱裝置加熱晶圓。
1‧‧‧烘烤設備
10‧‧‧腔室
11‧‧‧擋門
12‧‧‧側壁
13‧‧‧門洞
20‧‧‧支撐基底
21‧‧‧導槽
30‧‧‧移動機構
31‧‧‧軌道
32‧‧‧升降元件
40‧‧‧承載臂
41‧‧‧連接支架
42‧‧‧承載平台
421‧‧‧承載表面
43‧‧‧溝槽
50‧‧‧晶圓卡盤
51‧‧‧保持表面
60‧‧‧升降機構
70‧‧‧加熱裝置
71‧‧‧加熱板
72‧‧‧加熱表面
A1‧‧‧預設距離
A2‧‧‧距離
A3‧‧‧預設距離
A4‧‧‧距離
D1‧‧‧移動方向
D2‧‧‧升降方向
P1‧‧‧粒子
S101~S115‧‧‧步驟
W1‧‧‧晶圓
W11‧‧‧光刻膠
W12‧‧‧基板
W13‧‧‧頂面
W14‧‧‧底面
Z1‧‧‧中央區域
第1圖係表示本發明一些實施例之烘烤設備立體圖。
第2圖係表示本發明一些實施例之烘烤設備示意圖。
第3圖係表示本發明一些實施例之烘烤方法流程圖。
第4A~4E圖係表示本發明一些實施例中在烘烤方法的中間階段時之烘烤設備示意圖。
本說明書以下的揭露內容提供許多不同的實施例或範例,以實施本發明的不同特徵。而以下的揭露內容是敘述各個構件及其排列方式的特定範例,以求簡化發明的說明。當然,這些特定的範例並非用以限定本發明。例如,若是本說明
書以下的揭露內容敘述了將一第一特徵形成於一第二特徵之上或上方,即表示其包含了所形成的上述第一特徵與上述第二特徵是直接接觸的實施例,亦包含了尚可將附加的特徵形成於上述第一特徵與上述第二特徵之間,而使上述第一特徵與上述第二特徵可能未直接接觸的實施例。另外,本發明的說明中不同範例可能使用重複的參考符號及/或用字。這些重複符號或用字係為了簡化與清晰的目的,並非用以限定各個實施例及/或所述外觀結構之間的關係。
此外,其與空間相關用詞。例如「下面」、「下方」、「較低的」、「上方」、「較高的」及類似的用詞,係為了便於描述圖示中一個元件或特徵與另一個(些)元件或特徵之間的關係。除了在圖式中繪示的方位外,這些空間相關用詞意欲包含使用中或操作中的裝置之不同方位。裝置可能被轉向不同方位(旋轉90度或其他方位),則在此使用的空間相關詞也可依此相同解釋。
本發明描述了實施例的一些變化。在各個視圖和說明性之實施例中,相似的符號用於代表相似的元件。應當理解到,可以在方法之前、期間和之後提供額外的操作,且在其他方法的實施例中,可以取代或取消所描述的一些操作。
本發明提供一種烘烤設備和方法。在一些實施例中,烘烤設備包含於一半導體設備中。半導體設備是被配置以在一晶圓上執行半導體製程。
在一些實施例中,半導體設備為一微影設備,且半導體製程為一微影製程。微影設備是被配置以在一晶圓上執
行微影製程。微影製程利用一圖案化光罩和光束選擇性地曝光一光刻膠層以轉移一電路圖案至一基板上。微影製程可包括光刻膠塗布、軟烘烤(soft baking)、光罩對齊、曝光圖案、曝光後烘烤(post-exposure baking)、顯影光刻膠、硬烘烤(hard baking)以及清洗(rinsing)、其他適合的製程和其組合。
在一些實施例中,半導體設備為化學機械拋光設備(chemical mechanical polishing,CMP)、物理氣相沉積設備(physical vapor deposition,PVD)、化學氣相沉積設備(chemical vapor deposition,CVD)、離子注入設備(ion implant)、磊晶設備、濺鍍設備、熱加工設備、蝕刻設備、或其他適合的設備。
在一些實施例中,半導體製程為化學機械拋光製程、物理氣相沉積製程、化學氣相沉積製程、原子層沉積製程(ALD)、摻雜製程(doping)、網版印刷製程、乾蝕刻製程、濕蝕刻製程、或其他適合的製程。
第1圖係表示本發明一些實施例中之烘烤設備1立體圖,第2圖係表示本發明一些實施例中之烘烤設備1示意圖。烘烤設備1是被配置以在一晶圓W1上執行一烘烤製程,例如軟烘烤、曝光後烘烤、或硬烘烤。在一些實施例中,烘烤設備1是被配置以烘烤微影製程用的晶圓W1。
在一些實施例中,晶圓W1包括一光刻膠W11和一基板W12,光刻膠W11藉由一塗布製程而塗布於基板W12上。在一些實施例中,光刻膠W11包括一正感光性材料(positive photosensitive)或一負感光性材料(negative photosensitive)。光刻膠W11包括光敏化劑、樹酯(resin)、以及溶劑(solvent)。
在軟烘烤製程中,舉例來說,烘烤製程是用來減少光刻膠W11的溶劑。在軟烘烤製程之前,光刻膠W11並未固化。因此,光刻膠W11的輪廓可輕易地根據基板W12的傾斜度改變,且粒子可輕易地附著於光刻膠W11。
烘烤設備1包括一腔室10、一支撐基底20、一移動機構30、一承載臂40、一晶圓卡盤50、一升降機構60、以及一加熱裝置70。腔室10包括一擋門11,可移動地設置於腔室10的側壁12。
擋門11配置以遮蔽側壁12的一門洞13,而門洞13則是配置給晶圓W1穿過。在一些實施例中,擋門11藉由在一開啟位置和一關閉位置之間滑動而沿側壁12移動。當擋門11位於開啟位置時,門洞13未被遮蔽。當擋門11位於關閉位置時,擋門11完全遮蔽門洞13。
支撐基底20設置於腔室10中。移動機構30設置於支撐基底20中。移動機構30係被配置以移動承載臂40。
在一些實施例中,移動機構30包括一軌道31和一升降元件32,軌道31沿移動方向D1延伸。升降元件32可移動地設置在軌道31上,且被配置以沿軌道31移動。升降元件32連接承載臂40,且被配置沿升降方向D2來升起或降下承載臂40。在一些實施例中,升降方向D2垂直移動方向D1。
承載臂40可移動地設置在支撐基底20上,且連接升降元件32。承載臂40配置以傳送晶圓W1。藉由移動機構30,承載臂40可沿移動方向D1或升降方向D2移動。
在一些實施例中,承載臂40為一冷卻臂,用以在
加熱裝置70加熱晶圓W1後將其冷卻。承載臂40包括一連接支架41和一承載平台42。在一些實施例中,連接支架41穿過支撐底座20之一導槽21。
承載平台42被配置以支撐晶圓W1。在一些實施例中,承載平台42為一冷卻平台,用以在加熱裝置70加熱晶圓W1後將其冷卻。此外,承載平台42包括一溝槽43讓晶圓卡盤50或升降機構60穿過。在一些實施例中,溝槽43從承載平台42之中心沿移動方向D1延伸至承載平台42之邊緣。
在一些實施例中,承載平台42的承載表面421之面積對應於晶圓W1的頂面W13和底面W14之面積。承載表面421為承載平台42的主要表面,當承載平台42支撐晶圓W1時,晶圓W1的底面W14接觸承載平台42的承載表面421。頂面W13和底面W14為晶圓W1的主要表面,底面W14相反於頂面W13。
在一些實施例中,承載平台42的承載表面421平行一水平面。因此,在光刻膠W11尚未固化之一烘烤製程之前,光刻膠W11的頂面W13平行於一水平面。
晶圓卡盤50設置在腔室10中,且設置於支撐基底20上。晶圓卡盤50配置以支撐晶圓W1。在一些實施例中,晶圓卡盤50為一靜電晶圓卡盤。當晶圓W1被放置於晶圓卡盤50上或被其支撐時,晶圓W1的底面W14接觸晶圓卡盤50的保持表面51。
在一些實施例中,頂面W13和底面W14的面積介於130cm2左右至707cm2左右,保持表面51的面積介於18cm2左右至135cm2左右。在一些實施例中,晶圓W1之底面W14(或頂面
W13)面積為晶圓卡盤50之保持表面51面積的約1倍至約36倍。
保持表面51為晶圓卡盤50的主要表面。在一些實施例中,保持表面51平行一水平面。因此,在光刻膠W11尚未固化之一烘烤製程之前,光刻膠W11的頂面W13平行於一水平面。
在一些實施例中,當晶圓W1被晶圓卡盤50支撐時,晶圓卡盤50接觸晶圓W1之底面W14的中央區域Z1。在一些實施例中,當晶圓W1被晶圓卡盤50支撐時,晶圓卡盤50接觸晶圓W1之底面W14的中心。
升降機構60設置在支撐基底20中。升降機構60是配置來沿升降方向D2升起或降下晶圓卡盤50。升降機構60亦是被配置來旋轉晶圓卡盤50而使晶圓W1旋轉。
加熱裝置70設置在晶圓卡盤50之上。加熱裝置70被配置來加熱晶圓W1。在一些實施例中,加熱裝置70為一電磁加熱器、一紅外線加熱器、或一電阻加熱器。在一些實施例中,加熱裝置70包括一加熱板71。加熱板71平行於晶圓50。在一些實施例中,加熱板71為一金屬板或一陶瓷板。
加熱板71具有面向晶圓卡盤50之保持表面51的一加熱表面72。加熱表面72的面積大於或等於晶圓W1之頂面W13。加熱表面72平行於保持表面51。在一些實施例中,加熱表面72平行於晶圓W1的頂面(或晶圓卡盤50的保持表面51)。因此,光刻膠W11可均勻地被加熱板71加熱。
第3圖係表示本發明一些實施例之烘烤方法的流程圖,第4A至4E圖係表示本發明一些實施例中烘烤方法在中間
階段時之烘烤設備1示意圖。步驟S101中,晶圓W1如第1圖所示般被放置在承載臂40的承載平台42上。承載平台42位於鄰近或接觸支撐基底20之冷卻位置。
在一些實施例中,擋門11位於開啟位置。晶圓W1經由門洞13被傳送至腔室10中,並藉由一傳送手臂(未圖示)被放置於承載平台42上。在晶圓W1被放置於承載平台42上之後,擋門11位於關閉位置以遮蔽門洞13。
當晶圓W1被上置於承載平台42上時,晶圓W1的底面W14接觸承載平台42的承載表面421,且晶圓W1的底面W14平行於一水平面。因此,光刻膠W11的頂面W13平行於一水平面,且光刻膠W11的厚度均勻。
在步驟S103中,晶圓W1藉由承載臂40被傳送至晶圓卡盤50之上。如第4A圖所示,承載平台42和晶圓W1被升降元件32沿升降方向D2升起。在一些實施例中,在晶圓W1被放置於晶圓卡盤50上之前,承載平台42被升降元件32沿升降方向D2升起。
隨後,承載平台42和晶圓W1藉由移動機構30沿移動方向D1移動,直到晶圓W1位於晶圓卡盤50之上,如第4B圖所示。當晶圓W1位於卡盤50之上時,承載平台42和晶圓W1在晶圓卡盤50和加熱裝置70之間。
如第4B圖所示,晶圓卡盤50位於鄰近支撐底座20的一初始位置。步驟S105中,在晶圓W1被放置在晶圓卡盤50上之前,晶圓卡盤50被升降機構60旋轉。於一些實施例中,在晶圓W1被傳送至腔室10中之前,晶圓卡盤50被旋轉。於一些
實施例中,在晶圓W1被放置在晶圓卡盤50上之前,晶圓卡盤50被旋轉。於一些實施例中,晶圓卡盤的轉速介於5rpm左右至4500rpm左右。
在一些實施例中,一些粒子P1落在晶圓卡盤50的保持表面51上。如果晶圓W1放置於晶圓卡盤50上時,在晶圓W1和保持表面51之間有粒子P1,晶圓W1會相對於一水平面傾斜。在烘烤過程後,光刻膠W11的頂面W13會相對於晶圓W1之底面W14傾斜。如此一來,光刻膠W11的厚度會不均勻,且由於晶圓W1放置於晶圓卡盤50上時有粒子P1在晶圓W1和保持表面51之間,烘烤過程後光刻膠W11的外形會受影響。
當晶圓卡盤50旋轉時,晶圓卡盤50提供一離心力至保持表面51上的粒子P1,故粒子P1會因為離心力被從保持表面51移除。晶圓W1和晶圓卡盤50的保持表面51之間沒有粒子P1存在。因此,在烘烤過程後光刻膠W11的頂面W13平行於晶圓W1的底面W14,且光刻膠W11的厚度均勻。
在承載平台42位於承載卡盤50之上前,晶圓卡盤50停止旋轉。在一些實施例中,在晶圓卡盤50接觸晶圓W1前,晶圓卡盤50停止旋轉。在一些實施例中,經過一預定時間後,晶圓卡盤50停止旋轉。在一些實施例中,預定時間介於1秒左右至10秒左右。
在步驟S107中,晶圓W1藉由升起晶圓卡盤50放置在晶圓卡盤50上。待晶圓卡盤50停止旋轉後,晶圓卡盤50被升降機構60沿升降方向D2升起至一接觸位置,如第4C圖所示。晶圓卡盤50於接觸位置接觸在承載平台42上被支持的晶圓
W1。
假如晶圓卡盤50是利用銷(未圖示)升起,晶圓W1的底面W14可能會被銷所刮傷(銷之端部的面積可能介於1mm2左右至49mm2左右)。由於底面W14的刮傷,當晶圓W1在隨後的步驟中被設置於晶圓卡盤50上時,晶圓W1可能會傾斜,因而導致晶圓W1的良率降低。
當晶圓卡盤50靠近在接觸位置的晶圓W1時,晶圓卡盤50的升起速度降低。晶圓W1之底面W14面積為晶圓卡盤50之保持表面51面積的約1倍至約36倍。因此,晶圓W1之底面W14可避免被晶圓卡盤50刮傷,且晶圓W1的良率將提升。
在一些實施例中,晶圓卡盤50離在接觸位置的晶圓W1超過一預設距離A1之遠時的平均升起速度為晶圓卡盤50與晶圓W1在前述預設距離A1之內時的平均升起速度的6倍左右至50倍左右。晶圓卡盤50離晶圓W1超過預設距離A1之遠時的平均升起速度介於30mm/s左右至50mm/s左右。晶圓卡盤50在前述預設距離A1之內時的平均升起速度介於1mm/s左右至5mm/s左右。
此外,在一些實施例中,支撐基底20和位於接觸位置的承載平台42之間的距離A2介於30mm左右至80mm左右。預設距離A1介於1mm左右至5mm左右。距離A2為預設距離A1的約6倍至約50倍。因此,將晶圓卡盤50由預設位置移動以接觸在接觸位置的晶圓W1耗費的時間減少,故烘烤製程所需的時間減少。
隨後,待晶圓W1位於晶圓卡盤50之上後,晶圓卡
盤50升起至接觸位置使其與中央區域Z1物理接觸。如第4C圖所示,晶圓卡盤50穿過承載平台42的溝槽43以接觸在接觸位置的晶圓W1的底面W14之中央區域Z1。
然後,晶圓卡盤50支撐晶圓W1。如第4C圖所示,當晶圓W1被晶圓卡盤50支撐時,晶圓W1位於加熱裝置70和晶圓卡盤50之間。
加熱板71在晶圓卡盤50之上,且晶圓卡盤50在遠離支撐基底20的接觸位置接觸晶圓W1。因此,於前述接觸位置在支撐基底20上的粒子P1(或在鄰近支撐基底20的升降機構60上)不會掉落在晶圓W1的頂面W13。
在一些實施例中,待晶圓W1被晶圓卡盤50支撐後,承載臂40移動回冷卻位置。在一些實施例中,待晶圓W1被晶圓卡盤50支撐後,承載臂40不移動。當晶圓W1被加熱裝置70加熱後再度放置在承載臂40上時,前述承載臂40移動。
在步驟S109中,待晶圓W1被支撐在晶圓卡盤50之後,晶圓W1被晶圓卡盤50升起至靠近加熱裝置70之一加熱位置,如第4D圖所示。在一些實施例中,待晶圓W1升起至加熱位置後,承載臂40移動回冷卻位置。
在一些實施例中,待晶圓W1升起至加熱位置後,承載臂40不移動,且當晶圓W1被加熱裝置70加熱後再度放置在承載臂40上時,前述承載臂40再度移動。
在步驟S111中,晶圓W1在加熱位置被加熱板71加熱。如第4D圖所示,當晶圓W1被加熱裝置70的加熱板71加熱時,晶圓W1位於加熱裝置70和晶圓卡盤50之間。
在一些實施例中,加熱裝置70具有的加熱溫度介於70℃左右至250℃左右。在一些實施例中,加熱位置和加熱板71之間的距離介於30mm左右至80mm左右。光刻膠W11的溶劑受到加熱板71的熱能而減少。由於晶圓卡盤50之保持表面51上的粒子已被移除,光刻膠W11的頂面W13平行於一水平面和晶圓W11的底面W14。在晶圓W1被加熱板71加熱後,光刻膠W11的厚度均勻。
在一些實施例中,當晶圓W1被加熱裝置70加熱時,晶圓卡盤50旋轉晶圓W1。在一些實施例中,當晶圓W1被加熱裝置70加熱時,晶圓卡盤50的轉速介於5rpm左右至100rpm左右。因此,當晶圓W1被加熱裝置70加熱時,藉由晶圓W1的旋轉,溫度分布和光刻膠W11的厚度為均勻的。
在一些實施例中,晶圓W1通過接觸加熱板71的加熱表面72而被加熱板71加熱。當晶圓卡盤50靠近加熱板71時,晶圓卡盤50的升起速度降低。
在一些實施例中,晶圓卡盤50離加熱板71超過一預設距離之遠時的平均升起速度為晶圓卡盤50在前述預設距離之內時的平均升起速度的6倍左右至30倍左右。晶圓卡盤50離加熱板71超過預設距離之遠時的平均升起速度介於0.5mm/s左右至3mm/s左右。晶圓卡盤50在前述預設距離之內時的平均升起速度介於0.1mm/s左右至1.5mm/s左右。因此,將晶圓卡盤50由接觸位置移動至加熱位置耗費的時間減少,故烘烤製程所需的時間減少。
在步驟S113中,晶圓W1被晶圓卡盤50下降,因此
在晶圓W1被加熱板71加熱後,晶圓W1被帶至接觸承載臂40,如第4D、4E圖所示。在晶圓W1被晶圓卡盤50由加熱位置下降之前,承載平台42移動至接觸位置或位於加熱板71和晶圓卡盤50之下。
在一些實施例中,晶圓卡盤50離在接觸位置的承載平台42超過一預設距離A3之遠時的平均下降速度為晶圓卡盤50在前述預設距離A3之內時的平均下降速度的1倍左右至25倍左右。晶圓卡盤50離承載平台42超過預設距離A3之遠時的平均下降速度介於1.5mm/s左右至2.5mm/s左右。晶圓卡盤50在前述預設距離A3之內時的平均下降速度介於0.1mm/s左右至1.5mm/s左右。
此外,於一些實施例中,加熱板71和位於接觸位置的承載平台42之間的距離A4介於30mm左右至50mm左右。在一些實施例中,預設距離A3介於1mm左右至5mm左右。距離A4為預設距離A3的約6倍至約50倍。因此,將晶圓W1由加熱位置放置至在接觸位置的承載平台42上所耗費的時間減少。
在一些實施例中,待晶圓W1接觸承載平台42後,晶圓卡盤50將藉由升降機構60繼續下降至初始位置。
在步驟S115中,晶圓W1從晶圓卡盤50被承載臂40傳送至冷卻位置,如第2圖所示。晶圓W1在一冷卻時間內待在位在冷卻位置的承載平台42上。在一些實施例中,冷卻時間介於20秒左右至60秒左右。
在一些實施例中,為了隨後的半導體製程,晶圓W1冷卻至一環境溫度。在一些實施例中,環境溫度介於13℃
左右至32℃左右。
各實施例中提供了一種烘烤設備和方法。烘烤設備臂配置以烘烤微影製程的一晶圓。由於烘烤設備的加熱裝置位於晶圓之上,故落在晶圓上的粒子將減少。晶圓被晶圓卡盤所支稱以避免晶圓的底面被刮傷,且晶圓的良率增加。
再者,當晶圓被加熱裝置加熱時,晶圓被晶圓卡盤旋轉,故溫度分布和光刻膠的厚度為平均的。此外,在晶圓放置在晶圓卡盤上之前,晶圓卡盤旋轉,因此掉落在晶圓卡盤上的粒子可被移除。
一些實施例提供了一種烘烤晶圓的烘烤設備。烘烤設備包括配置來支撐晶圓的一晶圓卡盤,以及設置在晶圓卡盤之上且配置來加熱晶圓的一加熱裝置。烘烤設備亦包括一承載臂配置來傳送晶圓至晶圓卡盤。當晶圓被晶圓卡盤支撐時,晶圓卡盤接觸晶圓之底面的中央區域。
一些實施例提供了一種烘烤晶圓的烘烤設備。烘烤設備包括配置來支撐晶圓的一晶圓卡盤,以及設置在晶圓卡盤之上且配置來加熱晶圓的一加熱裝置。當晶圓被加熱裝置加熱時,晶圓被晶圓卡盤旋轉。
一些實施例提供了一種烘烤晶圓的烘烤方法。烘烤方法包括藉由承載臂傳送晶圓至晶圓卡盤,以及藉由升起晶圓卡盤放置晶圓於晶圓卡盤上。烘烤方法亦包括藉由晶圓卡盤升起晶圓鄰近加熱裝置,以及藉由加熱裝置加熱晶圓。
以上概略說明了本發明數個實施例的特徵,使所屬技術領域中具有通常知識者可更為容易理解本發明的各面
向。任何所屬技術領域中具有通常知識者應瞭解到本說明書可輕易作為其它結構或製程的變更或設計基礎,以進行相同於本發明實施例的目的及/或獲得相同的優點。任何所屬技術領域中具有通常知識者也可理解與上述等同的結構或製程並未脫離本發明之精神和保護範圍內,且可在不脫離本發明之精神和範圍內,當可作更動、替代與潤飾。
1‧‧‧烘烤設備
10‧‧‧腔室
11‧‧‧擋門
20‧‧‧支撐基底
40‧‧‧承載臂
41‧‧‧連接支架
42‧‧‧承載平台
50‧‧‧晶圓卡盤
51‧‧‧保持表面
70‧‧‧加熱裝置
71‧‧‧加熱板
W1‧‧‧晶圓
W11‧‧‧光刻膠
W12‧‧‧基板
W13‧‧‧頂面
Claims (10)
- 一種烘烤設備,用以烘烤一晶圓,包括:一晶圓卡盤,用以支撐該晶圓;一加熱裝置,設置在該晶圓卡盤之上,用以加熱該晶圓;以及一承載臂,用以傳送晶圓至該晶圓卡盤;其中當該晶圓被該晶圓卡盤支撐時,該晶圓卡盤接觸該晶圓之一底面的一中央區域。
- 如申請專利範圍第1項所述之烘烤設備,其中當該晶圓位於該晶圓卡盤之上後,該晶圓卡盤升起至接觸該中央區域之一接觸位置,且當該晶圓被該晶圓卡盤支撐後,該晶圓藉由該晶圓卡盤升起至靠近該加熱裝置之一加熱位置。
- 如申請專利範圍第1項所述之烘烤設備,其中當該晶圓被該加熱裝置加熱時,該晶圓被該晶圓卡盤旋轉。
- 如申請專利範圍第1項所述之烘烤設備,其中該晶圓卡盤離該晶圓超過一預設距離之遠時的平均升起速度約為該晶圓卡盤在該預設距離之內時的平均升起速度的6倍至50倍,其中該預設距離約介於1mm至5mm。
- 一種烘烤設備,用以烘烤一晶圓,包括:一晶圓卡盤,用以支撐該晶圓;以及一加熱裝置,設置在該晶圓卡盤之上,用以加熱該晶圓,其中當該晶圓被該加熱裝置加熱時,該晶圓被該晶圓卡盤旋轉。
- 如申請專利範圍第1或5項所述之烘烤設備,其中該晶圓卡 盤在該晶圓放置於該晶圓卡盤上之前旋轉。
- 一種烘烤方法,用以烘烤一晶圓,包括:藉由一承載臂傳送一晶圓至一晶圓卡盤;藉由升起該晶圓卡盤放置該晶圓至該晶圓卡盤上;藉由該晶圓卡盤升起該晶圓靠近一加熱裝置;以及藉由該加熱裝置加熱該晶圓。
- 如申請專利範圍第7項所述之烘烤方法,其中該烘烤方法更包括在該晶圓放置於該晶圓卡盤上之前,旋轉該晶圓卡盤。
- 如申請專利範圍第7項所述之烘烤方法,其中該烘烤方法更包括當該晶圓被該加熱裝置加熱時,藉由該晶圓卡盤旋轉該晶圓。
- 如申請專利範圍第7項所述之烘烤方法,其中該烘烤方法更包括在該晶圓被該加熱裝置加熱後,藉由該晶圓卡盤降低該晶圓使該晶圓接觸該承載臂。
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