TW201633379A - 磊晶晶圓之製造方法 - Google Patents

磊晶晶圓之製造方法 Download PDF

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TW201633379A
TW201633379A TW104138467A TW104138467A TW201633379A TW 201633379 A TW201633379 A TW 201633379A TW 104138467 A TW104138467 A TW 104138467A TW 104138467 A TW104138467 A TW 104138467A TW 201633379 A TW201633379 A TW 201633379A
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Hideki Hariya
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Shinetsu Handotai Kk
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Abstract

本發明係一種磊晶晶圓之製造方法，其係於插入於基座3之貫通孔H之頂起銷4之上面4b1相對於貫通孔H之上側之開口H1a陷入或突出而具有階差D之狀態下，於載置於基座3上之基板W使磊晶層氣相磊晶。利用雷射光測定自頂起銷4之上面4b1至貫通孔H之開口H1a為止之階差D，並根據該所測定之階差D而調節位於基座3之上下之加熱器9之磊晶成長時之輸出。藉此，提供容易調節磊晶成長時之熱源之輸出之磊晶晶圓之製造方法。

Description

磊晶晶圓之製造方法
本發明係關於一種磊晶晶圓之製造方法。
於磊晶成長時使磊晶層成長之成長用基板例如載置於圓盤狀之基座。於該基座形成有貫通自身之正背面之多個貫通孔，於該等各貫通孔，例如如專利文獻1所揭示般插入有能夠相對於基座升降地動作之頂起銷。藉由插入於各貫通孔之多個頂起銷升降，而於頂起銷與基座之間進行晶圓之交接。
於將搬送至基座之上方之晶圓載置於基座上之情形時，使多個頂起銷自貫通孔向上方突出而以利用該所突出之頂起銷之上面支撐晶圓之背面之方式接收晶圓。然後，保持藉由頂起銷支撐晶圓之狀態使頂起銷下降而將晶圓下降至基座上，藉此將晶圓載置於基座上。將晶圓載置於基座上之頂起銷係於自身之上面陷入於貫通孔，並且自身之上端部被貫通孔卡住之狀態下停止，然後，相對於基座上之晶圓使磊晶層氣相磊晶。
於該磊晶成長時，藉由位於基座之上下之熱源而加熱晶圓。對晶圓進行加熱之熱亦傳遞至上端部被基座之貫通孔卡住之頂起銷，於磊晶成長時自頂起銷散熱等，從而於頂起銷之周圍與其他區域產生溫度差。 因此，磊晶成長中之晶圓或基座根據是否為頂起銷之周圍而局部地產生溫度差，若於產生該溫度差之狀態下磊晶成長，則磊晶層之平坦度惡化。
因此，藉由調節位於基座之上下之熱源之輸出平衡而抑制起因於頂起銷之溫度差，使磊晶層之表面平坦。
[先前技術文獻] [專利文獻]
專利文獻1：日本專利特開2000-26192號公報
然而，由於自頂起銷之散熱而引起之溫度差根據插入於貫通孔之頂起銷之上面與貫通孔之上側之開口(基座之正面側之開口)之位置關係而變化。即，溫度差根據藉由插入於貫通孔之頂起銷之上面以相對於該貫通孔之上側之開口陷入或突出之方式定位而由頂起銷與基座形成之階差而變化。進而，該階差依賴於基座與頂起銷之完工尺寸，於基座與頂起銷之完工尺寸之設計誤差之範圍內，該階差產生不均。因此，由於磊晶成長所使用之基座與頂起銷之組合而起因於頂起銷之溫度差變化，每當該組合改變則必須調節上下之熱源之輸出平衡，從而調節花費工時。
本發明之課題在於提供容易調節磊晶成長時之熱源之輸出之磊晶晶圓之製造方法。
[解決課題之技術手段及發明之效果]
本發明之磊晶晶圓之製造方法係於插入於在基座之正背面 具有開口之貫通孔之頂起銷之上面相對於正面側之上述開口具有階差之狀態下，藉由位於上述基座之上下之熱源加熱而於載置於上述基座上之基板使磊晶層成長，且其特徵在於具備如下調節步驟，即：
對上述狀態下之自上述開口至上述頂起銷之上面為止之階差進行測定，根據所測定之上述階差而調節位於上述上下之熱源之輸出。
藉由插入於貫通孔之頂起銷之上面相對於該貫通孔之開口(基座之正面側之開口)陷入或突出，而於該貫通孔之開口與頂起銷之上面之間產生階差。自基座之正面側之開口至頂起銷上面為止之階差成為磊晶成長時使產生於頂起銷之周圍之晶圓或基座之局部之溫度差之值變化之主要原因。於本發明中，對成為該主要原因之階差進行測定，並根據所測定之階差而調節上下之熱源之輸出。因此，根據所測定之階差來估算產生於晶圓或基座之溫度差之值，由此可將所測定之階差作為指標而容易調節熱源之輸出。再者，於頂起銷之上面相對於貫通孔之正面側之開口位於同一平面狀之情形時，階差成為0，但於本說明書中階差為0之狀態亦設為「具有階差之狀態」，並不將階差為0之狀態除外。
於本發明之實施態樣中，調節步驟可調節位於基座之上側之熱源與位於基座之下側之熱源之輸出之比率。
而且，適合於使磊晶層之表面平坦之階差與輸出比率之較佳配對係於特定範圍內之階差下預先設定，
調節步驟係於所測定之階差為特定範圍內之情形時，將輸出調節為與所測定之階差形成較佳配對之比率。
藉由預先設定相對於所測定之階差之較佳比率(上下之熱源 之輸出比率)，而使選擇與所測定之階差對應之比率之時間縮短，可容易地調節磊晶成長時之熱源之輸出。其結果，可提高磊晶晶圓之生產性。
又，調節步驟可於所測定之階差為特定範圍外之情形時更換基座與頂起銷。因此，於測定出不適合於使磊晶層之表面平坦之階差之情形時，藉由更換基座與頂起銷而可提前選擇成為適當階差之基座與頂起銷。
於本發明之實施態樣中，於使熱源之輸出之合計為100%之情形時，可於上側之熱源之輸出：下側之熱源之輸出=55%：45%~40%：60%之範圍內調節比率。
上下之熱源之輸出之比率對氣相磊晶時之磊晶層之成長速度、磊晶晶圓背面之奈米形貌、及該磊晶晶圓背面之外周沈積帶來影響。因此，藉由於上述之範圍調節熱源之輸出，可抑制熱源之輸出之比率對磊晶層之成長速度等帶來不良影響。
因此，若與所測定之階差形成較佳配對之輸出之比率為55%：45%~40%：60%之範圍，則可使磊晶層之表面平坦，並且可抑制對磊晶層之成長速度等產生不良影響。
於本發明之實施態樣中，調節步驟可使用雷射來測定階差。藉由於測定中使用雷射而可高精度地測定階差。
1‧‧‧氣相磊晶裝置
2‧‧‧反應爐
3‧‧‧基座
4‧‧‧頂起銷
4b1‧‧‧上面
5‧‧‧支撐部
6‧‧‧驅動部
10‧‧‧測定裝置
12‧‧‧測定部
H‧‧‧貫通孔
H1a‧‧‧開口
D‧‧‧階差
圖1A係表示使用於本發明之氣相磊晶裝置之一例之模式剖面圖。
圖1B係圖1A之貫通孔之部分放大圖。
圖1C係將頂起銷插入於圖1B之貫通孔之部分放大圖。
圖2A係表示對自被貫通孔卡住之頂起銷之上面至貫通孔之開口(基座之正面側之開口)為止之階差進行測定的測定裝置之一例的模式立體圖。
圖2B係圖2A之測定裝置之模式側視圖。
圖2C係圖2A之測定裝置之模式前視圖。
圖2D係圖2A之測定裝置之模式俯視圖。
圖3係表示藉由圖2A之測定裝置對自被貫通孔卡住之頂起銷之上面至貫通孔之開口(基座之正面側之開口)為止之階差進行測定的測定結果之曲線圖。
圖4係表示相對於自被貫通孔卡住之頂起銷之上面至貫通孔之開口(基座之正面側之開口)為止之階差而調查磊晶成長時之熱源(下側之熱源)之最佳輸出之結果的曲線圖。
本發明之製造方法係對使磊晶層於成長用之基板成長之氣相磊晶裝置之基座及頂起銷之位置關係進行測定，並根據其測定結果而調節磊晶成長時之溫度條件。於以下之說明中，於說明氣相磊晶裝置之後，說明對基座與頂起銷之位置關係進行測定之測定裝置。
圖1A表示本發明之製造方法中所使用之一例之單片式之氣相磊晶裝置1。藉由氣相磊晶裝置1，而使磊晶層於成長用之基板W氣相磊晶，從而製造磊晶晶圓。
氣相磊晶裝置1具備由透明石英構件或不鏽鋼等金屬構件 等所構成之反應爐2。於反應爐2之內部具備：基座3；頂起銷4，其與基座3進行基板W之交接；支撐部5，其支撐基座3與頂起銷4；及驅動部6，其經由支撐部5而驅動基座3與頂起銷4。
基座3以大致水平地支撐基板W之方式形成為圓盤狀。基座3具備：袋部3a，其位於基座3之表面且凹陷為圓盤狀；及複數個(3個)貫通孔H，其等自袋部3a之表面貫通基座3之背面。袋部3a以較基板W之直徑稍大、且與基板W之厚度相同程度之深度自基座3之上面貫通之方式形成。
於自正面側觀察基座3之情形時，圍繞圓盤狀之袋部3a之中心而形成有3個貫通孔H。如圖1B所示，貫通孔H形成為漏斗狀，且具備缽狀之上部H1及與上部H1連接之圓筒狀之下部H2。上部H1具有：開口H1a，其位於袋部3a之正面側；錐部H1b，其自開口H1a側朝向下方縮徑；及連接口H1c，其位於錐部H1b之下端且將上部H1與下部H2連接。下部H2具有連接口H1c及開口H2a，其位於基座3之背面側。
如圖1C所示，將於與基座3之間進行基板W之交接之頂起銷4插入於貫通孔H。頂起銷4具備：本體部4a，其形成為圓棒狀；及缽狀(內部被填充之缽狀)之頭部4b，其與本體部4a之上端部連接。頭部4b形成為較貫通孔H之上部H1縮小之缽狀，且具有支撐基板W之背面之上面4b1。若自頂起銷4之腳部側(頭部4b之相反側)將頂起銷4插入於貫通孔H之開口H1a，則頂起銷4之頭部4b被貫通孔H之錐部H1b卡住。於該卡住之狀態下頂起銷4懸掛於貫通孔H，於自頂起銷4之上面4b1至貫通孔H之開口H1a之間形成有階差D之空間。
返回至圖1A，支撐部5具備：基座支撐部5a，其支撐基座3；及頂起銷支撐部5b，其於在基座3與頂起銷4之間進行基板W之交接時支撐頂起銷4。基座支撐部5a形成為圖示之Y字狀，以自基座3之背面側大致水平地支撐基座3之方式定位。基座支撐部5a具備：支柱部5a1，其於鉛垂方向支柱狀地延伸；及臂5a2，其自支柱部5a1之上部放射狀地延伸且與基座3之背面連接。頂起銷支撐部5b具備：圓筒部5b1，其以包圍支柱部5a1之方式圓筒狀地延伸；及提昇臂5b2，其自圓筒部5b1之上部放射狀地延伸且位於頂起銷4之下端附近。提昇臂5b2於提昇臂5b2之上端，具有能夠支撐頂起銷4之下端之支撐台5b3。
驅動部6連接於支柱部5a1與圓筒部5b1之下部。驅動部6作為使支柱部5a1與圓筒部5b1分別獨立地上下移動及繞軸線O(鉛垂方向)旋轉驅動之驅動手段(例如馬達)而構成。若驅動部6使圓筒部5b1自圖1A所示之位置上升，則支撐台5b3與圓筒部5b1一同上升，由此支撐台5b3支撐頂起銷4之下端而使頂起銷4上升。於使頂起銷4下降之情形時成為相反之動作。
於反應爐2之左右連接有氣體導入管7與氣體排出管8。氣體導入管7以與反應爐2之水平方向之一端側連接之方式定位，將各種氣體大致水平地導入至反應爐2內。氣體導入管7自連通於反應爐2內之氣體導入口7a將氣體導入至反應爐2內。氣體導入管7於氣相磊晶時自氣體導入口7a將氣相磊晶氣體G導入至反應爐2內。氣相磊晶氣體G包含成為磊晶層之原料之原料氣體、將原料氣體稀釋之載體氣體、及對薄膜賦予導電型之摻雜劑氣體。
於氣體導入管7之另一端側連接有自反應爐2內將氣體(通過基板W之氣相磊晶氣體G等)排出之氣體排出管8。氣體排出管8自連通於反應爐2內之氣體排出口8a將導入至反應爐2內之氣相磊晶氣體G等排出至反應爐2外。
於反應爐2之上下(基座3之上下)，配置成為於氣相磊晶時對反應爐2內進行加熱而調節反應爐2內之溫度之熱源之多個加熱器9。位於基座3之上側之加熱器9與位於基座3之下側之加熱器9之輸出係藉由未圖示之加熱器控制部而分別控制。加熱器控制部調節位於上側之加熱器9與位於下側之加熱器9之輸出之比率。於磊晶成長時，例如於將上下之加熱器9之輸出之合計設為100%之情形時，以成為上側之加熱器9之輸出：下側之加熱器9之輸出=55%：45%~40%：60%之範圍內之方式調節。換言之，於將上下之加熱器9之輸出之合計設為100%之情形時，以下側之加熱器9之輸出成為45~60%之範圍內之方式調節上下之加熱器9之輸出。
將基板W搬送至以如上之方式構成之氣相磊晶裝置1，於基板W上使磊晶層氣相磊晶。基板W藉由未圖示之搬送手段而搬送至反應爐2內之基座3之上方，被搬送至基座3之上方之基板W例如以如下方式載置於基座3上。
藉由驅動部6而使支撐台5b3上升，藉由上升之支撐台5b3而支撐頂起銷4之下端並提昇頂起銷4，使頂起銷4自貫通孔H突出。使頂起銷4上升直至自貫通孔H突出之頂起銷4之頭部4b到達基板W之背面為止，然後，利用頭部4b之上面4b1支撐基板W之背面並接收基板W。接收基板W之後，使支撐台5b3下降並保持支撐基板W之狀態使頂起銷4下 降。當頂起銷4下降而由頂起銷4支撐之基板W載置於袋部3a時，頂起銷4之頭部4b以自基板W之背面離開之方式進一步下降。然後，頂起銷4以頭部4b被貫通孔H之錐部H1b卡住之方式懸掛於貫通孔H(圖1C)，支撐頂起銷4之下端之支撐台5b3自頂起銷4離開。如此，於頂起銷4懸掛於貫通孔H之狀態下對基板W實施磊晶成長，從而製造磊晶晶圓。
於該磊晶成長時，藉由位於基座3之上下之加熱器9而加熱基板W。對基板W進行加熱之熱亦傳遞至懸掛於貫通孔H之頂起銷4，傳遞至頂起銷4之熱自頂起銷4散熱等，藉此，於頂起銷4之周圍與其以外之區域產生溫度差。自頂起銷4傳遞之熱係根據自插入於貫通孔H之頂起銷4之上面4b1至貫通孔H之開口H1為止之階差D(圖1C)而熱之移動條件變化，頂起銷4所引起之溫度差之值亦變化。進而，階差D依存於基座3與頂起銷4之完工尺寸，故而若將基座3或頂起銷4更換等，則階差D變化。因此，每當基座3與頂起銷4之配對改變時起因於階差D之溫度差變化，為了抑制該變化之溫度差，必須調節位於上下之加熱器9之輸出平衡，從而調節花費工時。
因此，於本發明之實施態樣中，藉由測定裝置而測定根據基座3與頂起銷4之完工尺寸而變化之階差D，根據所測定之階差D而調節上下之加熱器9之輸出。即，根據所測定之階差D而估算由頂起銷4所引起產生之基板W或基座3之附近之溫度差之值，將所測定之階差D作為指標而容易調節加熱器9之輸出。圖2A~圖2D表示對自貫通孔H之開口H1a至頂起銷4之上面4b1為止之階差D進行測定之測定裝置10之一例，以下，對測定裝置10進行說明。於測定階差D時，自組裝至氣相磊晶裝置1之前 之基座3及頂起銷4藉由測定裝置10而測定階差D。再者，於圖2A~圖2D中省略了頂起銷4。
測定裝置10具備：基礎部11，其支撐設置於氣相磊晶裝置1之基座3及頂起銷4；測定部12，其對由基礎部11支撐之基座3與頂起銷4之位置關係進行測定。
基礎部11具有：長方體狀之骨架11a；頂板11b，其位於骨架11a之最上部；台座部11c，其位於頂板11b之中央且支撐基座3之背面；及支柱11d，其自頂板11b之角部向上方突出。支柱11d具備朝向由台座部11c支撐之基座3之貫通孔H之上方自支柱11d之上部延伸之臂部11e，於臂部11e安裝有測定部12。
測定部12作為測定藉由頂起銷4之上面4b相對於貫通孔H之開口H1a陷入或突出而形成之階差D(參照圖1C，圖1C例示陷入之狀態)之距離感測器而構成。於距離感測器使用周知之雷射位移計之情形時，例如，以如下方式測定階差D。首先，朝向由台座部11c支撐之基座3之貫通孔H與貫通孔H之周邊自雷射位移計之半導體雷射照射雷射光。所照射之雷射光於頂起銷4之上面、基座3之表面及貫通孔H內等反射，將該反射光引導至雷射位移計內之影像感測器而使之於該影像感測器上成像。然後，使用該影像感測器上之成像來測定自被照射雷射光之頂起銷4之上面至貫通孔H之開口H1a為止之階差D。測定自貫通孔H之開口H1a至頂起銷4之上面4b1為止之距離作為階差D(參照圖1C)。
藉由以如上之方式構成之測定裝置10，預先測定藉由設置於氣相磊晶裝置1之前之基座3與頂起銷4而形成之階差D。根據所測定之 階差D估算起因於頂起銷4而於氣相磊晶時產生之基板W或基座3之附近之溫度差之值，藉此，能夠將所測定之階差D作為指標而容易調節加熱器9之輸出。
實施例
為了確認本發明之效果而進行以下所示之實驗。
準備多個組裝至氣相磊晶裝置1之前之基座3與頂起銷4之配對，藉由測定裝置10而測定該等各配對之階差D(自貫通孔H之開口H1a至頂起銷4之上面4b1為止之距離)。測定裝置10之測定部12使用KEYENCE公司製之超高速線上輪廓測量儀(LJ-V6080)。圖3表示使用測定裝置10測定之階差D之測定結果之一，測定自開口H1a至頂起銷4之上面4b1為止之階差D。再者，於本實施例中，以正值表示頂起銷4之上面4b1陷入於貫通孔H之狀態之階差D。於實施例中未例示，頂起銷4之上面4b1自貫通孔H突出之狀態之階差D成為負值。
其次，自測定出階差D之基座3與頂起銷4之多個配對中抽取階差D為0mm附近(正值)之配對1，並抽取階差D較配對1而增加約0.2mm之配對2。進而，自配對2抽取階差D增加0.2mm左右之配對3，利用相同之方法亦抽取配對4與配對5，於階差D為0~1mm之範圍抽取配對1~5。即，抽取具有頂起銷4之上面4b1陷入於貫通孔H內之狀態之階差D之配對1~5。
將所抽取之配對1~5之基座3及頂起銷4分別組裝至氣相磊晶裝置1，針對各配對1~5之每一者而製作多個磊晶晶圓。具體而言，於矽單晶基板使矽磊晶層成長而製作矽磊晶晶圓。於針對各配對1~5之每 一者而製作多個磊晶晶圓時，使磊晶成長時之上下之加熱器9之輸出如以下般。將位於基座3之上下之加熱器9之輸出之合計設為100%，使下側之加熱器9之輸出改變為52%、54%、56%、58%、60%而製作5個磊晶晶圓(此時之上側之加熱器9之輸出對應於下側之加熱器9之輸出而為48%、46%、44%、42%、40%)。然後，對所製作之磊晶晶圓之磊晶層之表面之凹凸(位於頂起銷4之正上方部之磊晶層之凹凸)進行觀察，取得最能抑制凹凸之下側之加熱器9之輸出。
對分別自配對1~5取得之最能抑制磊晶層之凹凸之下側加熱器9之輸出之比率與對應於該比率之階差D之值進行繪圖，於圖4表示自該各繪圖引出近似直線而得之曲線圖。近似直線表示適合於使磊晶層之表面平坦之階差D與下側之加熱器9之輸出(%)之較佳配對，其近似曲線係於下側之加熱器9之輸出為52%~60%之範圍設定。
利用測定裝置10測定階差D，根據圖4之曲線圖取得與所測定之階差D對應之下側之加熱器9之較佳之輸出比率，藉此，可取得使磊晶層之表面平坦之較佳之階差D與輸出之比率。因此，選擇與所測定之階差D對應之加熱器9之輸出之比率之時間縮短，磊晶成長時之上下之加熱器9之輸出之調節變得容易。又，根據基座3與頂起銷4之完工尺寸，即便階差D變化，根據圖4所示之曲線圖而進行與階差D對應之加熱器9之輸出之比率之調節變得容易。因此，可提高所製造之磊晶晶圓之生產性。
於因所測定之階差D較大(例如1mm以上)或為負值，而無法根據圖4之曲線圖獲得所對應之加熱器9之輸出之比率之情形時，只要更換基座3與頂起銷4即可。因此，可選擇於使用氣相磊晶裝置1之前 成為適當之深度D之基座3與頂起銷4。
又，於圖4之曲線圖中，下側之加熱器9之輸出之比率為52~60%。因此，加熱器9之輸出不對氣相磊晶時之磊晶層之成長速度、所製作之磊晶晶圓背面之奈米拓墣、及該磊晶晶圓背面之外周沈積帶來不良影響。因此，可使磊晶層之表面平坦，並且可抑制對磊晶層之成長速度等產生不良影響。
再者，本發明並不限定於上述實施形態。上述實施形態為例示，具有與本發明之申請專利範圍所記載之技術性思想實質上相同之構成、且發揮相同之作用效果者不管為何者均包含於本發明之技術性範圍。
3‧‧‧基座
3a‧‧‧袋部
10‧‧‧測定裝置
11‧‧‧基礎部
11a‧‧‧骨架
11b‧‧‧頂板
11c‧‧‧台座部
11d‧‧‧支柱
11e‧‧‧臂部
12‧‧‧測定部
H‧‧‧貫通孔

Claims (6)

  1. 一種磊晶晶圓之製造方法，其係於插入於在基座之正背面具有開口之貫通孔之頂起銷之上面相對於正面側之上述開口具有階差之狀態下，藉由位於上述基座之上下之熱源加熱而於載置於上述基座上之基板使磊晶層成長，且其特徵在於，具備如下調節步驟，即：對自上述狀態下之上述開口至上述頂起銷之上面為止之階差進行測定，並根據所測定之上述階差而調節位於上述上下之熱源之輸出。
  2. 如申請專利範圍第1項之磊晶晶圓之製造方法，其中，上述調節步驟調節位於上述基座之上側之上述熱源與位於上述基座之下側之上述熱源之上述輸出之比率。
  3. 如申請專利範圍第2項之磊晶晶圓之製造方法，其中，適合於使上述磊晶層之表面平坦之上述階差與上述輸出之比率之較佳配對係於特定範圍內之上述階差下預先設定，上述調節步驟係於上述所測定之上述階差為上述特定範圍內之情形時，將上述輸出調節為與上述所測定之上述階差形成上述較佳配對之上述比率。
  4. 如申請專利範圍第3項之磊晶晶圓之製造方法，其中，上述調節步驟係於上述所測定之上述階差為上述特定範圍外之情形時，更換上述基座與上述頂起銷。
  5. 如申請專利範圍第2至4項中任一項之磊晶晶圓之製造方法，其中，於將上述熱源之輸出之合計設為100%之情形時，將上述比率調節為上述上側之上述熱源之輸出：上述下側之上述熱源之輸出=55%：45%~ 40%：60%之範圍內。
  6. 如申請專利範圍第1項之磊晶晶圓之製造方法，其中，上述調節步驟係使用雷射測定上述階差。
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