TW201614114A - Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE - Google Patents

Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE

Info

Publication number
TW201614114A
TW201614114A TW104125287A TW104125287A TW201614114A TW 201614114 A TW201614114 A TW 201614114A TW 104125287 A TW104125287 A TW 104125287A TW 104125287 A TW104125287 A TW 104125287A TW 201614114 A TW201614114 A TW 201614114A
Authority
TW
Taiwan
Prior art keywords
ga2o3
crystal substrate
single crystal
plane
based single
Prior art date
Application number
TW104125287A
Other languages
English (en)
Inventor
Kohei Sasaki
Original Assignee
Tamura Seisakusho Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tamura Seisakusho Kk filed Critical Tamura Seisakusho Kk
Publication of TW201614114A publication Critical patent/TW201614114A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
TW104125287A 2014-08-07 2015-08-04 Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE TW201614114A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014161760A JP6013410B2 (ja) 2014-08-07 2014-08-07 Ｇａ２Ｏ３系単結晶基板

Publications (1)

Publication Number Publication Date
TW201614114A true TW201614114A (en) 2016-04-16

Family

ID=55263938

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104125287A TW201614114A (en) 2014-08-07 2015-08-04 Ga2O3-BASED SINGLE CRYSTAL SUBSTRATE

Country Status (6)

Country Link
US (2) US20170233892A1 (zh)
EP (1) EP3178972A4 (zh)
JP (1) JP6013410B2 (zh)
CN (2) CN110565173A (zh)
TW (1) TW201614114A (zh)
WO (1) WO2016021681A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6904517B2 (ja) * 2016-06-30 2021-07-14 株式会社Flosfia 結晶性酸化物半導体膜およびその製造方法
WO2021044489A1 (ja) * 2019-09-02 2021-03-11 日本碍子株式会社 半導体膜
JP7083139B1 (ja) 2021-08-06 2022-06-10 株式会社タムラ製作所 半導体基板、半導体ウエハ、及び半導体ウエハの製造方法
JPWO2023021815A1 (zh) * 2021-08-20 2023-02-23

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP4630986B2 (ja) * 2003-02-24 2011-02-09 学校法人早稲田大学 β−Ｇａ２Ｏ３系単結晶成長方法
JP2008105883A (ja) * 2006-10-24 2008-05-08 Nippon Light Metal Co Ltd 酸化ガリウム単結晶基板及びその製造方法
JP5636642B2 (ja) * 2009-06-24 2014-12-10 住友電気工業株式会社 化合物半導体基板
US9142623B2 (en) * 2011-09-08 2015-09-22 Tamura Corporation Substrate for epitaxial growth, and crystal laminate structure
EP2765610B1 (en) * 2011-09-08 2018-12-26 Tamura Corporation Ga2o3 semiconductor element
US9716004B2 (en) * 2011-09-08 2017-07-25 Tamura Corporation Crystal laminate structure and method for producing same
JP5864998B2 (ja) * 2011-10-11 2016-02-17 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP5491483B2 (ja) * 2011-11-15 2014-05-14 株式会社タムラ製作所 β−Ｇａ２Ｏ３系単結晶の成長方法
JP5879102B2 (ja) * 2011-11-15 2016-03-08 株式会社タムラ製作所 β−Ｇａ２Ｏ３単結晶の製造方法
JP2013177256A (ja) * 2012-02-28 2013-09-09 Mitsubishi Chemicals Corp 周期表第１３族金属窒化物基板
JP2014086458A (ja) * 2012-10-19 2014-05-12 Tamura Seisakusho Co Ltd 酸化ガリウム系基板の製造方法
JP5747110B1 (ja) * 2014-06-30 2015-07-08 株式会社タムラ製作所 Ｇａ２Ｏ３系単結晶基板

Also Published As

Publication number Publication date
EP3178972A4 (en) 2018-05-02
CN106574396A (zh) 2017-04-19
JP6013410B2 (ja) 2016-10-25
EP3178972A1 (en) 2017-06-14
CN110565173A (zh) 2019-12-13
US20210238766A1 (en) 2021-08-05
JP2016037417A (ja) 2016-03-22
WO2016021681A1 (ja) 2016-02-11
US20170233892A1 (en) 2017-08-17

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