TW201611944A - Method for producing target material for cylindrical sputtering target and cylindrical sputtering target - Google Patents

Method for producing target material for cylindrical sputtering target and cylindrical sputtering target

Info

Publication number
TW201611944A
TW201611944A TW104125915A TW104125915A TW201611944A TW 201611944 A TW201611944 A TW 201611944A TW 104125915 A TW104125915 A TW 104125915A TW 104125915 A TW104125915 A TW 104125915A TW 201611944 A TW201611944 A TW 201611944A
Authority
TW
Taiwan
Prior art keywords
sputtering target
cylindrical sputtering
polishing step
target
producing
Prior art date
Application number
TW104125915A
Other languages
Chinese (zh)
Other versions
TWI558504B (en
Inventor
Shintaro Ishida
Original Assignee
Mitsui Mining & Smelting Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co filed Critical Mitsui Mining & Smelting Co
Publication of TW201611944A publication Critical patent/TW201611944A/en
Application granted granted Critical
Publication of TWI558504B publication Critical patent/TWI558504B/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/02—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work
    • B24B5/12—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centres or chucks for holding work for grinding cylindrical surfaces both externally and internally with several grinding wheels
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Abstract

An embodiment of the method for producing a target material for a cylindrical sputtering target contains: an outer-surface polishing step, an inner-surface polishing step, and a finishing polishing step. As to the outer-surface polishing step, an outer-surface of the ceramic sputtering target material is polished. As to the inner-surface polishing step, an inner-surface of the ceramic sputtering target material is polished. As to the finishing polishing step, a polishing on at least two directions is conducted during at least one of the outer-surface polishing step and the inner-surface polishing step.
TW104125915A 2014-08-22 2015-08-10 Method for producing target material for cylindrical sputtering target and cylindrical sputtering target TWI558504B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014169808 2014-08-22

Publications (2)

Publication Number Publication Date
TW201611944A true TW201611944A (en) 2016-04-01
TWI558504B TWI558504B (en) 2016-11-21

Family

ID=55350547

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104125915A TWI558504B (en) 2014-08-22 2015-08-10 Method for producing target material for cylindrical sputtering target and cylindrical sputtering target

Country Status (5)

Country Link
JP (2) JP5941232B1 (en)
KR (1) KR20160074577A (en)
CN (1) CN105683408B (en)
TW (1) TWI558504B (en)
WO (1) WO2016027599A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607107B (en) * 2016-09-20 2017-12-01 Linco Technology Co Ltd Reinforced magnetic field generator for sputter target and its cylindrical sputtering target device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5909006B1 (en) 2015-03-23 2016-04-26 Ｊｘ金属株式会社 Cylindrical sputtering target and manufacturing method thereof
JP6376101B2 (en) * 2015-10-27 2018-08-22 住友金属鉱山株式会社 Cylindrical sputtering target and manufacturing method thereof
CN113275951A (en) * 2021-05-26 2021-08-20 芜湖映日科技股份有限公司 ITO (indium tin oxide) rotary target material surface preparation process
CN113857953A (en) * 2021-09-13 2021-12-31 先导薄膜材料（广东）有限公司 Processing method of cadmium oxide target material

Family Cites Families (17)

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JPS61284370A (en) * 1985-06-11 1986-12-15 Taisei Kikai Kk High-speed grinding method for internal surface of ceramics
JP3460506B2 (en) * 1996-11-01 2003-10-27 三菱マテリアル株式会社 Sputtering target for high dielectric film formation
JP3628554B2 (en) * 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ Sputtering target
JP2001131737A (en) * 1999-11-09 2001-05-15 Nikko Materials Co Ltd Sputtering target and method of grinding
JP2002322560A (en) * 2001-04-24 2002-11-08 Mitsui Mining & Smelting Co Ltd Sputtering target and manufacturing method thereof
JP4270971B2 (en) * 2003-07-24 2009-06-03 三井金属鉱業株式会社 Manufacturing method of sputtering target
US7951275B2 (en) * 2003-09-12 2011-05-31 Jx Nippon Mining & Metals Corporation Sputtering target and method for finishing surface of such target
JP4961672B2 (en) 2004-03-05 2012-06-27 東ソー株式会社 Cylindrical sputtering target, ceramic sintered body, and manufacturing method thereof
US20080020238A1 (en) * 2004-03-31 2008-01-24 Hirotaka Tanaka Magentic Disk and Glass Substrate for Magnetic Disk
JP2007231392A (en) * 2006-03-02 2007-09-13 Tosoh Corp Sputtering target consisting of oxide sintered body, and its manufacturing method
TW200825194A (en) * 2006-12-15 2008-06-16 Solar Applied Mat Tech Corp Sputtering target, surface treatment, and film thereof
JP5467735B2 (en) * 2007-07-02 2014-04-09 東ソー株式会社 Cylindrical sputtering target
JP5158355B2 (en) * 2008-03-19 2013-03-06 東ソー株式会社 Sputtering target made of sintered oxide
WO2010070832A1 (en) * 2008-12-15 2010-06-24 出光興産株式会社 Sintered complex oxide and sputtering target comprising same
JP5139409B2 (en) * 2009-12-18 2013-02-06 株式会社神戸製鋼所 Pure Al or Al alloy sputtering target
TW201249600A (en) * 2011-06-08 2012-12-16 Thintech Materials Technology Co Ltd Processing method for silicon target surface
JP5750060B2 (en) * 2012-01-18 2015-07-15 三井金属鉱業株式会社 Ceramic cylindrical sputtering target material and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI607107B (en) * 2016-09-20 2017-12-01 Linco Technology Co Ltd Reinforced magnetic field generator for sputter target and its cylindrical sputtering target device

Also Published As

Publication number Publication date
WO2016027599A1 (en) 2016-02-25
TWI558504B (en) 2016-11-21
JP5941232B1 (en) 2016-06-29
JP2016176148A (en) 2016-10-06
CN105683408B (en) 2017-07-28
JP6496681B2 (en) 2019-04-03
CN105683408A (en) 2016-06-15
JPWO2016027599A1 (en) 2017-04-27
KR20160074577A (en) 2016-06-28

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