TWI607107B - Reinforced magnetic field generator for sputter target and its cylindrical sputtering target device - Google Patents

Description

Enhanced magnetic field generator for sputtering target and cylindrical sputtering target device thereof

The present invention relates to a magnetic field generator, and more particularly to a reinforced magnetic field generator for a sputtering target and a cylindrical sputtering target device thereof.

A cylindrical sputtering target device for a magnetron sputtering system, comprising a cylindrical target formed with a cylindrical space, and an existing one disposed in the cylindrical space Magnetic field generator 1 (see Fig. 1); wherein the magnetic field distribution and magnetic field strength generated by the existing magnetic field generator 1 affect the plasma density in a sputtering environment of the magnetron sputtering system (plasma density) a size, a distribution of sputtered particles sputtered by the cylindrical target after being bombarded by charged gas ions, and a etch track of the cylindrical target by the plasma.

Referring to FIG. 1 and FIG. 2, the prior art magnetic field generator 1 is disposed in a cylindrical space (not shown) of the cylindrical target, and includes a base 10 and a base 10 disposed thereon. The magnetic unit on it. The magnet unit has a central magnet 11, two outer magnets 12 disposed on the base 10, and two end magnets 13 disposed on the base 10. The central magnet 11 along one axis L ₀ having a length extending along an axial direction of the axis L _0. The outer magnets 12 are spaced apart from each other on the opposite sides of the central magnet 11 along a radial direction of the axis L ₀ , and each of the outer magnets 12 has a length along the axial direction. The end magnets 13 are spaced apart from each other at opposite ends of the central magnet 11 along the axis L ₀ ; wherein the length of the central magnet 11 is smaller than the length of each of the outer magnets 12.

The purpose of the length of the central magnet 11 being smaller than the length of each of the outer magnets 12 is to increase the distance between the central magnet 11 and the end magnets 13 to thereby increase the magnetic field between the central magnet 11 and the end magnets 13. The strength and the utilization of the opposite ends of the cylindrical target (i.e., corresponding to the positions of the end magnets 13) are increased during the implementation of the magnetron sputtering process. Although the design of the central magnet 11 having a length smaller than the length of each of the outer magnets 12 contributes to increasing the distance between the central magnets 11 and the end magnets 13 to increase the magnetic field strength therebetween and increase the utilization of the opposite ends of the cylindrical target. rate. However, it should be noted here that the design of the central magnet 11 having a length smaller than the length of each of the outer magnets 12 also shortens the etching path of the cylindrical target by the plasma, that is, the shorter the length of the central magnet 11 is, The etched track of the cylindrical target of the plasma is shorter, so that the position of the cylindrical target corresponding to the end magnets 13 cannot be effectively etched (bombardment) by the plasma, thereby causing the target waste.

Those skilled in the art to which the present invention pertains need to improve the magnetic field strength between the central magnet 11 and the end magnets 13 to improve the utilization of the opposite ends of the cylindrical target. A magnetic field between the central magnet 11 and the outer magnets 12 thereby enhancing the target utilization of the cylindrical target at a position corresponding to the central magnet 11 and the outer magnets 12. Hereinafter, the conventional magnetic field generator 1 shown in FIGS. 1 and 2 will be taken as an example, and FIG. 3 will be extended.

In general, if the magnetic field of the magnetic field generator 1 shown in Fig. 2 is to be changed, as shown in Fig. 3, the size of the central magnet 11 and the outer magnetic timings 12 are changed, and the center is changed. The technical means such as the distance between the magnet 11 and each of the outer magnets 12 is implemented. In detail, when the magnetic field generator 1 is of a structure as shown in FIG. 2 (that is, a first distance d ₁ between the central magnet 11 and the outer magnets 12 is small), although sputtering is possible In the process, the coating distribution is easily controlled, but the magnetic field strength of the tangent component between the central magnet 11 and the outer magnets 12 is insufficient, and it is difficult to raise the position of the cylindrical target corresponding to the central magnet 11 and the outer magnets 12 Target utilization. When the magnetic field generator 1 is of the structure shown in FIG. 3 (that is, the central magnet 11 is a larger second distance d ₂ from the outer magnets 12), the central magnet 11 may be added. The magnetic field strength between the outer magnets 12 and the target utilization ratio of the cylindrical target corresponding to the position of the central magnet 11 and the outer magnets 12; however, it also increases the cylindrical target The sputtering angle of the sputtered particles generated by the sputtering of the charged gas ions, so that the sputtered particles are not easily sputtered accurately in a coating region (not shown) to be formed, so that the coating film is coated. Distribution is not easily controlled.

Therefore, the structure of the conventional magnetic field generator 1 is modified to maintain the overall magnetic field strength so that the plasma etched track of the cylindrical target extends to a position corresponding to the end magnets 13 while maintaining The small sputtering angle makes the coating distribution easy to control, which is a problem to be solved by those skilled in the art.

Accordingly, it is an object of the present invention to provide a reinforced magnetic field generator for a sputtering target that improves magnetic field strength to enhance target utilization.

Another object of the present invention is to provide a cylindrical sputtering target device.

Thus, the enhanced magnetic field generator for sputtering a target of the present invention comprises a susceptor, a magnet unit, and a strengthening unit.

The magnet unit is disposed on the base and includes a central magnet, two outer magnets, and magnets at both ends. The central magnet extends along an axis thereof and has a length along an axial direction of the axis, and the outer magnets are respectively spaced apart on a radial direction of the axis on opposite sides of the central magnet, and each of the outer magnets The axial direction has a length, and the length of each of the outer magnets is not less than the length of the central magnet, and the end magnets are respectively spaced along the axis at opposite ends of the central magnet.

The reinforcing unit is disposed on the base and includes two first permanent magnets, and the first permanent magnets are respectively located between the central magnet and the magnets at the two ends along the axis.

In the present invention, the central magnet, each of the outer magnets, each of the end magnets, and each of the first permanent magnets have a first magnetic pole, and a second magnetic pole having a magnetic pole opposite to the first magnetic pole, the central portion The first magnetic pole of the magnet is disposed away from the base, and the second magnetic pole of each of the outer magnet and the end magnet is disposed away from the base, and the first magnetic pole and the second permanent magnet of each of the first permanent magnets The magnetic poles respectively contact the central magnet and the end magnets.

Further, the cylindrical sputtering target device of the present invention comprises a reinforced magnetic field generator for sputtering a target as described above, and a cylindrical target. The cylindrical target extends along an axis substantially parallel to the axis of the central magnet of the magnet unit to circumferentially surround the enhanced magnetic field generator, and the cylindrical target defines a reinforced magnetic field generation The cylindrical space of the device.

The effect of the present invention is that the first permanent magnets of the reinforcing unit are respectively disposed between the central magnet and the magnets at both ends along the axis so as to be integrated into the cylindrical space of the cylindrical target. In the middle, not only the magnetic field strength between the central magnet and the end magnets can be increased, but also the etching trajectory of the plasma to the cylindrical target is extended toward the position of the corresponding end magnet and the target utilization rate is increased.

Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same reference numerals.

Referring to FIG. 4, FIG. 5 and FIG. 6, an embodiment of the enhanced magnetic field generator M for sputtering a target of the present invention comprises a base 2, a magnet unit 3 disposed on the base 2, and A strengthening unit 4 disposed on the base 2.

The magnet unit 3 includes a central magnet 31, two outer magnets 32, and magnets 33 at both ends. The central magnet 31 extends along one of the axis L _1, and has a length L along the axial axis _1. Such outer magnet 32 along a radial direction of the axis L ₁ are positioned spaced opposite sides of the central magnet, each of the outer magnet 32 has a length along the axis, and the length of each of the outer magnet 32 is not 31 Less than the length of the central magnet 31. Such an end portion of the magnet 33 along the axis L ₁ are spaced on opposite ends of the central magnet 31.

The reinforcing unit 4 includes two first permanent magnets 41 and two second permanent magnets 42. Such is the first permanent magnet 41 along the axis L ₁ of the central magnet 31 located between both end portions of the magnet 33, connected to the central magnet 31 and the magnet 33 are respectively those ends. Such a second permanent magnet 42 is radial of L ₁ respectively located along the axis of the central magnet 31 and 32 between such outer magnet.

In this embodiment of the present invention, the central magnet 31, each of the outer magnets 32, each of the end magnets 33, each of the first permanent magnets 41, and each of the second permanent magnets 42 have a first magnetic pole N. And a second magnetic pole S having a magnetic pole opposite to the first magnetic pole N. The first magnetic pole N of the central magnet 31 of the magnet unit 3 is disposed away from the base 2, and the outer magnet 32 of the magnet unit 3 and the second magnetic pole S of each of the end magnets 33 are back It is provided to the base 2. The first magnetic pole N and the second magnetic pole S of the first permanent magnet 41 of the reinforcing unit 4 respectively contact the central magnet 31 and the end magnets 33, and the second of the reinforcing units 4 The first magnetic pole N and the second magnetic pole S of the permanent magnet 42 respectively contact the central magnet 31 and the outer magnets 32.

In detail, in the embodiment of the present invention, the distance between the central magnet 31, the outer magnets 32, and the end magnets 33 is not changed (that is, the foregoing distances are substantially the same as the existing ones. The first permanent magnet 41 and the second permanent magnet 42 are provided on the premise that the central magnet 11 of the magnetic field generator 1 and the outer magnet 12 and the distance between the end magnets 13 are provided. The central magnet 31, the outer magnets 32, and the magnetic poles of the end magnets 33, and the first permanent magnets 41 and the second permanent magnets 42 are arranged in a relationship as shown in FIG. Therefore, the first permanent magnets 41 passing through the reinforcing unit 4 enhance the magnetic field lines between the central magnet 31 and the end magnets 33 and modify the magnetic field distribution therebetween, and pass through the second of the reinforcing units 4 The permanent magnet 42 reinforces the magnetic field loop between the central magnet 31 and the outer magnets 32 and modifies the magnetic field distribution therebetween.

It is to be noted here that the aspect of the end magnets 33 of the enhanced magnetic field generator M of the present invention is not limited thereto. Each of the end magnets 33 may also extend in a radial direction of the axis L ₁ to connect the outer magnets 32 (not shown) such that the end magnets 33 and the outer magnets 32 together form a circle around the central magnet. 31. The first permanent magnets 41 and the annular magnets of the second permanent magnets 42.

Referring to Figure 7, an embodiment of the cylindrical sputter target device of the present invention comprises the enhanced magnetic field generator M and a cylindrical target 5. The cylindrical target 5 extends along an axis L ₂ substantially parallel to the axis L ₁ of the central magnet 31 of the magnet unit 3 to circumferentially surround the enhanced magnetic field generator M, and the cylindrical target 5 A cylindrical space 50 accommodating the enhanced magnetic field generator M is defined. Plating target type sputtering apparatus of the present invention in a cylindrical embodiment of this embodiment, the cylindrical target 5 can be reinforced L ₂ relative to the magnetic field generator M along its axis of rotation.

Referring to FIG. 5 and FIG. 6 simultaneously, when the enhanced magnetic field generator M is disposed in the cylindrical space 50 of the cylindrical target 5, the reinforcing magnetic field generator M of the reinforcing unit 4 The first permanent magnet 41 and the second permanent magnets 42 can enhance the magnetic field strength of the central magnet 31 and the end magnets 33 to enhance the magnetic field strength, and the first permanent magnets 41 can also make the plasma pair The etching track of the cylindrical target 5 extends to a position corresponding to the end portion magnet 33 to effectively utilize the opposite end portions of the cylindrical target 5. In addition, the second permanent magnets 42 of the reinforcing unit 4 of the reinforced magnetic field generator M can maintain the sputtering angle of the plasma to the cylindrical target 5 at a small angle, so that the magnetron splashes. In the sputtering process, the sputtering system can accurately sputter the sputtered particles in the coating area of the desired film to make the coating distribution easy to control. Detailed experimental analysis data relating to this embodiment of the present invention will be described later.

Further, it is to be noted that the enhanced magnetic field generator M of the present invention is not limited to being applied to a cylindrical sputtering target device. The enhanced magnetic field generator M of the present invention can be used as long as it is a target that can be used in the magnetron sputtering system.

The present invention provides a comparative example (that is, the conventional magnetic field generator 1) and related experimental data analysis thereof, thereby clearly illustrating and comparing the enhanced magnetic field generator M with the existing magnetic field generation 1 respectively. Efficacy when bonded to the cylindrical target 5. In this comparative example, it is further divided into a comparative example 1 (see FIG. 2) and a comparative example 2 (see FIG. 3) due to the arrangement relationship shown in FIG. 2 and FIG.

First, the magnetic flux density (G) between the magnetic field generator 1 of the comparative example and the end magnets 13, 33 of the enhanced magnetic field generator M of the present invention and the corresponding central magnets 11, 31 are analyzed.

Referring to Figures 8 and 9, reference is made to Annex 1 and Annex 2, respectively, showing magnetic flux density (G) spectra obtained by numerical simulation of the comparative example and the embodiment of the present invention. It should be noted that FIG. 8 and FIG. 9 only illustrate the magnetic flux density (G) between the central magnets 11, 31 on one side and the end magnets 13, 33, respectively, and FIG. 9 is only omitted as shown in FIG. 5. The enhanced magnetic field generator M of the second permanent magnets 42 shown is analyzed for its magnetic flux density (G). 8 and 9, when the distance between the magnetic field generator 1 of the comparative example and the center magnets 11, 31 of the enhanced magnetic field generator M of the present invention and the corresponding end magnets 13, 33 is the same, The highest magnetic flux density of this comparative example is only about 300 G. The highest magnetic flux density of the enhanced magnetic field generator M of the present invention is raised to about 360 G, and the magnetic flux density is effectively enhanced.

Figure 10 shows the magnetic flux density (G) calculated from Figures 8 and 9. In the comparative example and the embodiment of the present invention, the distance between the central magnets 11, 31 and the corresponding end magnets 13, 33 is 24 mm as an example. The peaks of the two magnetic flux density curves shown in Fig. 10 respectively represent plasma for the comparative example and the cylindrical target 5 of this embodiment (see Fig. 7) corresponding to its central magnet 11, 31 and its end magnets 13, 33 An etched track E ₁ , E _{2 that} can be formed at the inter position. In detail, when the magnetic field generator 1 of the comparative example is mounted in the cylindrical target 5 (see FIG. 7), the etching trace E _{1 of the} plasma to the cylindrical target 5 can only reach the central magnet. The end of 11. In contrast to this embodiment, when the enhanced magnetic field generator M of this embodiment of the present invention is mounted in the cylindrical target 5 (see FIG. 7), the etching path E _{2 of} the plasma to the cylindrical target 5 is The cylindrical magnet 33 can be effectively utilized by effectively extending the end magnet 33. That is to say, in addition to enhancing the magnetic flux density, the first permanent magnets 41 in the enhanced magnetic field generator M of the embodiment of the present invention can increase the etching trajectory of the plasma to the cylindrical target 5.

Next, with respect to the magnetic flux generator 1 of the comparative example 1, the magnetic field generator 1 of the comparative example 2, and the reinforced magnetic field generator M of the embodiment of the present invention, the magnetic flux density (G) between the central magnets 11, 31 and the outer magnets 32. Analyze.

Referring to FIG. 11 and FIG. 12, FIG. 11 shows corresponding tangential component magnetic fields B _t1 and B _t2 obtained after the magnetic field generator 1 of the comparative examples 1 and 2 is integrated into the cylindrical target 5 and numerically simulated. a graph of the normal component magnetic fields B _n1 and B _n2 ; and FIG. 12 shows that the magnetic field generator 1 of the comparative example 1 and the enhanced magnetic field generator M of the embodiment are integrated into the cylindrical target 5 A graph of corresponding tangential component magnetic fields B _t1 , B _tM and normal component magnetic fields B _n1 , B _nM obtained after numerical simulation.

Referring to FIG. 2 and FIG. 3, the comparative example 2 is compared with the comparative example 1, by changing the size and distance of the central magnet 11 and each of the outer magnets 12, so that the comparative example 2 shown in FIG. The tangential component magnetic field B _t2 (~440 G) is larger than the tangential component magnetic field B _t1 (~340 G) of Comparative Example 1. However, when the magnetic flux density of the normal component of FIG. 11 is equal to 0, the corresponding sputtering angle is known to be sputtered when the plasma is sputtered to the cylindrical target 5 of Comparative Example 2 (see FIG. 7). A sputtering angle θ ₂ of the sputtered particles is larger than the sputtering angle θ _{1 of} the comparative example ₁ , so that the magnetic field distribution of the comparative example 2 is not effectively concentrated toward the central magnet 11 thereof. Therefore, although Comparative Example 2 can effectively increase the magnetic flux density, the accompanying sputtering angle is also significantly increased (i.e., θ ₂ &gt _; θ ₁ ), so that it is easy to be in the sputtering process. The sputtered particles are not easily sputtered accurately on the coating region where the film is to be formed, so that the coating distribution is not easily controlled.

Referring to FIG. 12, it can be seen from FIG. 12 that the sputtering angle θ _M of one embodiment of the present invention is slightly larger than the sputtering angle θ _{1 of} the comparative example 1 when the magnetic flux density of the normal component of FIG. 12 is equal to zero. And smaller than the sputtering angle θ _{2 of} the comparative example 2 (see FIG. 11; that is, θ ₁ < θ _M < θ ₂ ); however, the tangential component magnetic field B _{tM of} this embodiment is raised to about 440 G, not only approaching The tangential component magnetic field B _{t2 of} Comparative Example 2 is also relatively higher than the tangential component magnetic field B _t1 (~340 G) of Comparative Example 1. Therefore, the enhanced magnetic field generator M of the cylindrical sputtering target device of the embodiment of the present invention can be increased by the second permanent magnets 42 without changing the distance between the central magnet 31 and the outer magnet 32. At the same time of its magnetic flux density, its magnetic field distribution can be concentrated toward its central magnet 31 to maintain its sputtering angle θ _M only slightly larger than the sputtering angle θ _{1 of} Comparative Example ₁ , thereby causing the cylindrical sputtering of this embodiment. The target device allows easy control of the coating distribution during the sputtering process. According to the foregoing analysis, the cylindrical sputtering target device of the present invention can not only improve the overall magnetic field strength by the second permanent magnets 42 of the enhanced magnetic field generator M, but also can harden the permanent magnets. Magnetic to improve the overall magnetic field distribution.

In summary, the reinforced magnetic field generator M and its cylindrical sputtering target device for sputtering a target of the present invention are disposed on the premise that the basic structure of the magnet unit 3 is not changed. The first permanent magnets 41 between the central magnet 31 and the magnets 33 at both ends, and the second permanent magnets 42 disposed between the central magnet 31 and the outer magnets 32, in addition to enhancing the overall magnetic field strength In addition, the first permanent magnets 41 further enable the plasma to etch the trajectory of the cylindrical target 5 to correspond to the position of the end magnets 33 to improve the utilization of the target, and the second permanent magnets 42 can also maintain a proper sputtering angle θ _M , so that the sputtered particles can be accurately sputtered to the coating region of the desired film during the sputtering process, so that the coating distribution can be easily controlled, so the invention can be achieved. the goal of.

However, the above is only the embodiment of the present invention, and the scope of the invention is not limited thereto, and all the simple equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still Within the scope of the invention patent.

2‧‧‧Base
5‧‧‧Cylindrical target
3‧‧‧Magnetic unit
50‧‧‧Cylindrical space
31‧‧‧Central Magnet
L ₁ ‧‧‧ axis
32‧‧‧Outside magnet
L ₂ ‧‧‧ axis
33‧‧‧End magnet
M‧‧‧Enhanced Magnetic Field Generator
4‧‧‧Strengthening unit
N‧‧‧first magnetic pole
41‧‧‧First permanent magnet
S‧‧‧second magnetic pole
42‧‧‧Second permanent magnet

Other features and advantages of the present invention will be apparent from the embodiments of the drawings, wherein: Figure 1 is a partial top plan view showing an existing magnetic field generator disposed in a cylindrical target; 2 is a cross-sectional view taken along line II-II of FIG. 1 , illustrating that the distance between a central magnet and the outer magnets of the magnetic field generator is a first distance d ₁ ; FIG. 3 is a schematic cross-sectional view illustrating the magnetic field The distance between the central magnet of the generator and the outer magnets is a second distance d ₂ ; FIG. 4 is a perspective view illustrating an embodiment of the enhanced magnetic field generator for sputtering targets of the present invention; Is a partial top view showing a relative position between a central magnet, two outer magnets, and two ends of a magnet unit of the embodiment of the present invention, and two first permanent magnets and two second permanent magnets of a reinforcing unit. Figure 6 is a side cross-sectional view taken along line VI-VI of Figure 5, illustrating the central magnet, the first permanent magnets, and the relative magnetisms of the outer magnets of the embodiment of the present invention. Figure 7 is a side cross-sectional view showing an embodiment of the cylindrical sputtering target device of the present invention; Figure 8 is a partial plan view of a magnetic flux density (G) and a magnetic field generator, A magnetic flux density of a comparative example of the present invention (that is, the conventional magnetic field generator) is illustrated; FIG. 9 is a partial plan view of a magnetic flux density (G) and a reinforced magnetic field generator, illustrating the embodiment of the present invention. The magnetic flux density under the condition of omitting the second permanent magnets; FIG. 10 is a magnetic flux density (G) calculated from FIG. 8 and FIG. 9 and a partial top view, respectively illustrating the central magnets of FIGS. 8 and 9. And the magnetic flux density between the end magnets and the etching trajectory of the plasma; FIG. 11 is a magnetic flux density (G) versus angle relationship, illustrating that the magnetic field generators of Comparative Example 1 and Comparative Example 2 are respectively integrated in the comparative example. a relationship between a sputtering angle of each cylindrical target and a magnetic flux density thereof to a cylindrical target of the cylindrical sputtering target device; and FIG. 12 is a magnetic flux density (G) versus angle relationship, Explain the comparison Relationship between magnetic flux density and the angle of a cylindrical sputtering target in each of the embodiment 1 and the embodiment of the present invention.

2‧‧‧Base

3‧‧‧Magnetic unit

31‧‧‧Central Magnet

32‧‧‧Outside magnet

33‧‧‧End magnet

4‧‧‧Strengthening unit

41‧‧‧First permanent magnet

42‧‧‧Second permanent magnet

L ₁ ‧‧‧ axis

M‧‧‧Enhanced Magnetic Field Generator

N‧‧‧first magnetic pole

S‧‧‧second magnetic pole

Claims (4)

A reinforced magnetic field generator for sputtering a target, comprising: a susceptor; a magnet unit disposed on the pedestal and comprising a central magnet, two outer magnets, and magnets at both ends, the central magnet is Extending along an axis thereof and having a length along an axial direction of the axis, the outer magnets are respectively spaced apart on opposite sides of the central magnet along a radial direction of the axis, and each of the outer magnets has along the axial direction a length, each of the outer magnets having a length not less than a length of the central magnet, the end magnets being spaced apart from each other at opposite ends of the central magnet; and a reinforcing unit disposed on the base The first permanent magnets are disposed between the central magnet and the magnets at the two ends along the axis; wherein the central magnet, each of the outer magnets, each of the end magnets, and each Each of the first permanent magnets has a first magnetic pole, and a second magnetic pole having a magnetic pole opposite to the first magnetic pole. The first magnetic pole of the central magnet is disposed away from the base, and each of the outer magnets and each end The second magnetic pole of the portion of the magnet is disposed opposite to the base, and the first magnetic pole and the second magnetic pole of each of the first permanent magnets respectively contact the central magnet and the end magnets. The reinforced magnetic field generator for sputtering a target according to claim 1, wherein the reinforcing unit further comprises two second permanent magnets, wherein the second permanent magnets are respectively located in the center along a radial direction of the axis. Between the magnet and the outer magnets, and each of the second permanent magnets has a first magnetic pole and a second magnetic pole opposite to the first magnetic pole, the first magnetic pole and the second second permanent magnet The magnetic poles respectively contact the central magnet and the outer magnets. The reinforced magnetic field generator for sputtering a target according to claim 1, wherein each of the end magnets further extends in a radial direction of the axis to connect the outer magnets. A cylindrical sputtering target device comprising: the enhanced magnetic field generator according to any one of claims 1 to 3; and a cylindrical target along a central magnet substantially parallel to the magnet unit An axis of the axis extends to circumferentially surround the enhanced magnetic field generator, and the cylindrical target defines a cylindrical space in which the enhanced magnetic field generator is housed.