TW201350459A - Ceramic cylindrical sputtering target and method for manufacturing thereof - Google Patents

Ceramic cylindrical sputtering target and method for manufacturing thereof Download PDF

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TW201350459A
TW201350459A TW102101593A TW102101593A TW201350459A TW 201350459 A TW201350459 A TW 201350459A TW 102101593 A TW102101593 A TW 102101593A TW 102101593 A TW102101593 A TW 102101593A TW 201350459 A TW201350459 A TW 201350459A
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target
ceramic
sputtering target
powder
cylindrical sputtering
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TWI540114B (en
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Takanori Masaki
Shintaro Ishida
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Mitsui Mining & Smelting Co
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Abstract

The present invention provides a ceramic cylindrical sputtering target, which is characterized by having a length of 500 mm or more and a relative density of 95% or more, and being formed as an integrated target. By using the ceramic cylindrical sputtering target of the present invention, it is not necessary to use a plurality of overlapped sputtering targets to form a long strip, because the target of the present invention is an integrated target with a high density and having a length of 500 mm or more. Accordingly, when using the ceramic cylindrical sputtering target of the present invention in a device such as a magnetron rotating cathode sputtering device, arcing or particles generation becomes less during sputtering, because there is no divisional part or the number of divisional part is small in the overall target.

Description

陶瓷圓筒形濺鍍靶材及其製造方法 Ceramic cylindrical sputtering target and manufacturing method thereof

本發明係關於陶瓷圓筒形濺鍍靶材及其製造方法,詳細而言,係關於高密度且為長條狀之陶瓷圓筒形濺鍍靶材及其製造方法。 The present invention relates to a ceramic cylindrical sputtering target and a method of manufacturing the same, and more particularly to a high-density and elongated ceramic cylindrical sputtering target and a method of manufacturing the same.

磁控(magnetron)型旋轉陰極濺鍍(cathode sputtering)裝置,係於圓筒形靶的內側具有磁場產生裝置,且一邊從靶的內側冷卻一邊旋轉靶以進行濺鍍之裝置,使靶材的全面進行磨耗(erosion)而均勻地切削。因此,平板型磁控濺鍍裝置的使用效率為20至30%,相對於此,磁控型旋轉陰極濺鍍裝置中,可得到60%以上之極高的使用效率。再者,藉由使靶旋轉,與習知之平板型磁控濺鍍裝置相比,每單位面積可投入較大功率,所以可得到較高的成膜速度。 A magnetron-type rotating cathode sputtering device is a device having a magnetic field generating device inside a cylindrical target and rotating the target to perform sputtering while cooling from the inside of the target to make the target The abrasion is performed comprehensively and the cutting is performed uniformly. Therefore, the use efficiency of the flat type magnetron sputtering apparatus is 20 to 30%, whereas in the magnetron type rotary cathode sputtering apparatus, an extremely high use efficiency of 60% or more can be obtained. Further, by rotating the target, a larger power can be input per unit area than in the conventional flat type magnetron sputtering apparatus, so that a high film formation speed can be obtained.

近年來,平面顯示器和太陽能電池中所使用之玻璃基板逐漸大型化,為了將薄膜形成於該大型化之基板上,必須使用長度超過3m之長條狀的圓筒形靶。 In recent years, glass substrates used in flat displays and solar cells have been gradually enlarged, and in order to form a film on the enlarged substrate, it is necessary to use a long cylindrical target having a length of more than 3 m.

此般旋轉陰極濺鍍方式,在容易加工為圓筒形狀且機械強度強之金屬靶中係廣泛地普及。然而,陶瓷靶材,由於該 強度較低且脆,於製造中容易產生破裂或變形等。因此,於陶瓷靶中,雖可製造出短條狀的圓筒形靶材,但無法製造出性能高之長條狀的圓筒形靶材。 Such a rotating cathode sputtering method is widely used in metal targets that are easily processed into a cylindrical shape and have high mechanical strength. However, ceramic targets, due to the It is low in strength and brittle, and is prone to cracking or deformation during manufacture. Therefore, in the ceramic target, a short cylindrical cylindrical target can be produced, but a long cylindrical cylindrical target having high performance cannot be produced.

專利文獻1中,係揭示一種在重疊短條狀的圓筒形靶材所製作之長條狀的圓筒形靶中,以圓筒形靶的外周面為基準來接合各靶材,並將靶材的分割部所產生之段差控制在0.5mm以下,藉此來抑制由段差所起因之電弧放電(arcing)或粒子(particle)的產生之技術。然而,該技術中,當圓筒形靶材較短時,若不重疊多數個靶材,則無法得到長條狀的圓筒形靶,因此使靶材與靶材之間所產生之分割部的數目增多。若存在分割部,則即使消除段差,亦無法避免由該分割部所起因之電弧放電的產生。因此,在產生較多分割部的數目之前述技術中,電弧放電的產生次數增多。此外,於濺鍍時由於放電集中在分割部,因此當分割部的數目較多時,於濺鍍時容易以分割部為起點產生破裂。並且接合多數個靶材亦耗費時間,製造上效率亦不佳。 Patent Document 1 discloses a long cylindrical target produced by laminating a short cylindrical cylindrical target, and each target is joined on the basis of the outer peripheral surface of the cylindrical target, and The technique of controlling the arcing or the generation of particles caused by the step is suppressed by controlling the step generated by the divided portion of the target to be 0.5 mm or less. However, in this technique, when the cylindrical target is short, if a plurality of targets are not overlapped, a long cylindrical target cannot be obtained, and thus the divided portion between the target and the target is generated. The number has increased. If the dividing portion is present, even if the step is eliminated, the occurrence of arc discharge caused by the dividing portion cannot be avoided. Therefore, in the aforementioned technique in which the number of divided portions is generated, the number of occurrences of arc discharge increases. Further, since the discharge is concentrated on the divided portion at the time of sputtering, when the number of the divided portions is large, it is easy to cause cracking from the divided portion as a starting point at the time of sputtering. It also takes time to join a plurality of targets, and the manufacturing efficiency is also poor.

專利文獻2中,係揭示一種在中空圓筒形狀之陶瓷燒結體的鍛燒中,在具有與陶瓷成形體的燒結收縮率同等之燒結收縮率之板狀陶瓷成形體上,載置前述陶瓷成形體並鍛燒,藉此防止鍛燒時的破裂,而得到相對密度95%以上之燒結體之技術。然而,該技術中,當使陶瓷粉末成形、脫脂及燒結來製作出長度為500mm以上之長條狀的圓筒陶瓷燒結體時,在成形、脫脂及鍛燒中的任一項步驟中,仍有產生破裂之問題。 In the calcination of a hollow cylindrical ceramic sintered body, the above-described ceramic molding is carried out on a plate-shaped ceramic molded body having a sintering shrinkage ratio equivalent to the sintering shrinkage ratio of the ceramic formed body. The body is calcined to prevent cracking during calcination, and a technique of obtaining a sintered body having a relative density of 95% or more is obtained. However, in this technique, when the ceramic powder is formed, degreased, and sintered to produce a long cylindrical ceramic sintered body having a length of 500 mm or more, in any of the steps of forming, degreasing, and calcining, There is a problem of cracking.

專利文獻3中,係揭示一種藉由熔射法來製造長度為500mm以上之ITO圓筒形靶材之技術。然而,藉由熔射法所得 之圓筒形靶材,無法提高相對密度,相對密度僅能到達70%出頭。使用相對密度低的靶材來進行濺鍍時,電弧放電的產生次數會增多。因此,使用藉由熔射法所得之長條狀的圓筒形靶材來進行濺鍍時,電弧放電的產生次數會增多。 Patent Document 3 discloses a technique of producing an ITO cylindrical target having a length of 500 mm or more by a spray method. However, by the spray method The cylindrical target cannot increase the relative density, and the relative density can only reach 70%. When sputtering is performed using a target having a relatively low density, the number of occurrences of arc discharge increases. Therefore, when sputtering is performed using a long cylindrical target obtained by a spray method, the number of occurrences of arc discharge increases.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1:日本特開2010-100930號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2010-100930

專利文獻2:日本特開2005-281862號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2005-281862

專利文獻3:日本特開平10-68072號公報 Patent Document 3: Japanese Patent Laid-Open No. Hei 10-68072

本發明之目的在於提供一種高密度且為長條狀之陶瓷圓筒形濺鍍靶材。 It is an object of the present invention to provide a high density and elongated strip of ceramic cylindrical sputtering target.

本發明人係發現到一種即使成形體為長條狀,於製造時亦不會產生破裂或變形等之陶瓷圓筒形濺鍍靶材的製造方法,並成功地製造出高密度且為長條狀之陶瓷圓筒形濺鍍靶材。 The present inventors have found a method for producing a ceramic cylindrical sputtering target which does not cause cracking or deformation at the time of manufacture even if the molded body is elongated, and successfully produces a high density and long strip. Ceramic cylindrical splash target.

亦即,本發明是一種陶瓷圓筒形濺鍍靶材,其中,長度為500mm以上且相對密度為95%以上,並且為一體化靶材。 That is, the present invention is a ceramic cylindrical sputtering target in which the length is 500 mm or more and the relative density is 95% or more, and is an integrated target.

前述陶瓷圓筒形濺鍍靶材,其長度較佳為750mm以上、1000mm以上、1500mm以上。 The ceramic cylindrical sputtering target preferably has a length of 750 mm or more, 1000 mm or more, and 1500 mm or more.

前述陶瓷圓筒形濺鍍靶材,例如可為Sn的含量以SnO2量換算為1至10質量%之ITO製者,Al的含量以Al2O3量換 算為0.1至5質量%之AZO製者,或是In的含量以In2O3量換算為40至60質量%、Ga的含量以Ga2O3量換算為20至40質量%、Zn的含量以ZnO量換算為10至30質量%之IGZO製者。 The ceramic cylindrical sputtering target material may be, for example, an ITO product in which the content of Sn is 1 to 10% by mass in terms of the amount of SnO 2 , and the A content of Al is 0.1 to 5% by mass in terms of the amount of Al 2 O 3 . The content of In or the content of In is 40 to 60% by mass in terms of the amount of In 2 O 3 , the content of Ga is 20 to 40% by mass in terms of the amount of Ga 2 O 3 , and the content of Zn is 10 to 30 in terms of the amount of ZnO. IGZO manufacturer of mass %.

此外,本發明是一種陶瓷圓筒形濺鍍靶,其特徵為:藉由接合材料,將前述陶瓷圓筒形濺鍍靶材接合於支承管(backing tube)而成。 Further, the present invention is a ceramic cylindrical sputtering target characterized in that the ceramic cylindrical sputtering target is joined to a backing tube by a bonding material.

此外,本發明是一種陶瓷圓筒形濺鍍靶材的製造方法,其係包含:從含有陶瓷原料粉末及有機添加物之漿液(slurry)調製出顆粒之步驟1、使前述顆粒CIP成形而製作圓筒形的成形體之步驟2、使前述成形體脫脂之步驟3、以及鍛燒前述脫脂後之成形體之步驟4,其中,在前述步驟1中,前述有機添加物的量相對於前述陶瓷原料粉末的量為0.1至1.2質量%。 Further, the present invention provides a method for producing a ceramic cylindrical sputtering target, which comprises the steps of: preparing a pellet from a slurry containing a ceramic raw material powder and an organic additive, and forming the pellet CIP. Step 2 of the cylindrical shaped body, step 3 of degreasing the formed body, and step 4 of calcining the formed body after degreasing, wherein in the first step 1, the amount of the organic additive is relative to the ceramic The amount of the raw material powder is from 0.1 to 1.2% by mass.

在前述陶瓷圓筒形濺鍍靶材的製造方法中,較佳為前述有機添加物含有黏合劑(binder),該黏合劑為聚合度200至400且皂化度60至80mol%之聚乙烯醇(polyvinyl alcohol)。 In the method for producing a ceramic cylindrical sputtering target, it is preferable that the organic additive contains a binder which is a polyvinyl alcohol having a degree of polymerization of 200 to 400 and a degree of saponification of 60 to 80 mol% ( Polyvinyl alcohol).

本發明之陶瓷圓筒形濺鍍靶材,由於是具有500mm以上的長度之一體化靶材,所以不需重疊多數個濺鍍靶材以形成為長條狀來使用。因此,當於磁控旋轉陰極濺鍍裝置等之中使用本發明之陶瓷圓筒形濺鍍靶材時,由於靶全體不會存在分割部或是分割部之數量較少,所以在濺鍍中,產生電弧放電或粒子之情形較少。此外,本發明之陶瓷圓筒形濺鍍靶材,由於為高密度,所以在濺鍍中,產生電弧放電之情形較少。 Since the ceramic cylindrical sputtering target of the present invention is an integrated target having a length of 500 mm or more, it is not necessary to overlap a plurality of sputtering targets to form an elongated shape. Therefore, when the ceramic cylindrical sputtering target of the present invention is used in a magnetron rotating cathode sputtering apparatus or the like, since the entire portion of the target does not have a division portion or the number of the division portions is small, sputtering is performed. There are fewer cases of arcing or particles. Further, since the ceramic cylindrical sputtering target of the present invention has a high density, arc discharge is less likely to occur during sputtering.

本發明之陶瓷圓筒形濺鍍靶材的製造方法,能夠不 會產生破裂或變形等,而有效率地製造出前述陶瓷圓筒形濺鍍靶材。 The method for producing the ceramic cylindrical sputtering target of the present invention can The above-described ceramic cylindrical sputtering target can be efficiently produced by cracking or deformation.

<陶瓷圓筒形濺鍍靶材> <ceramic cylindrical sputtering target>

本發明之陶瓷圓筒形濺鍍靶材,其長度為500mm以上且相對密度為95%以上,並且為一體化靶材。所謂一體化靶材,並非由複數個零件所構成,而是靶材整體以物體而言為不可分割的一個物品之意。重疊複數個靶材零件,或是接合所形成之靶材,並非一體化靶材。因此,本發明之陶瓷圓筒形濺鍍靶材,係與重疊複數個圓筒形靶材,或是接合所形成之長度為500mm以上的圓筒狀靶材有所區別。 The ceramic cylindrical sputtering target of the present invention has a length of 500 mm or more and a relative density of 95% or more, and is an integrated target. The so-called integrated target is not composed of a plurality of parts, but an object in which the entire object is inseparable from the object. It is not an integrated target to overlap a plurality of target parts or to form a target formed by bonding. Therefore, the ceramic cylindrical sputtering target of the present invention is different from a plurality of cylindrical targets or a cylindrical target having a length of 500 mm or more formed by joining.

本發明之陶瓷圓筒形濺鍍靶材,例如可藉由後述製造方法來製造。 The ceramic cylindrical sputtering target of the present invention can be produced, for example, by a production method described later.

如前述般,陶瓷靶材由於該強度較低且脆,於先前的燒結法中,於製造中容易產生破裂或變形等,而無法製造出長度為500mm以上之一體化靶材陶瓷圓筒形濺鍍靶材。因此,以往必須將長度未達500mm之短條狀的圓筒形濺鍍靶材連接多數個,而形成長條狀的圓筒狀濺鍍靶材。藉由該構成,靶材與靶材之間所產生之分割部的數目增多,所以使用具有該構成之靶材來進行濺鍍時,由該分割部所起因之電弧放電的產生次數會增多。 As described above, since the ceramic target is low in strength and brittle, in the prior sintering method, cracking or deformation is easily generated in the production, and it is impossible to manufacture a ceramic cylindrical splash of an integrated target having a length of 500 mm or more. Plating target. Therefore, in the past, it has been necessary to connect a plurality of short strip-shaped cylindrical sputtering targets having a length of less than 500 mm to form a long cylindrical sputtering target. According to this configuration, the number of divided portions generated between the target and the target increases. Therefore, when sputtering is performed using the target having the above configuration, the number of occurrences of arc discharge caused by the divided portion increases.

本發明之陶瓷圓筒形濺鍍靶材,由於是一體化且具有500mm以上的長度之長條體,所以不需連接多數個靶材來構成 長條體。本發明之陶瓷圓筒形濺鍍靶材中,因應必要的長度,可僅使用1個來進行濺鍍,或是連接多數個來進行濺鍍。當僅使用1個來進行濺鍍時,由於不存在分割部,所以不會產生由分割部所起因之電弧放電。即使連接多數個來進行濺鍍,由於構成此之圓筒形濺鍍靶材具有500mm以上的長度,所以可藉由較少個數來構成目標長度。因此,與連接多數個短條狀的靶材來形成長條狀的圓筒狀濺鍍靶材之情形相比,分割部的數目較少,所以由該分割部所起因之電弧放電的產生次數較少。 Since the ceramic cylindrical sputtering target of the present invention is an elongated body having a length of 500 mm or more, it is not necessary to connect a plurality of targets to constitute a long body. Long strips. In the ceramic cylindrical sputtering target of the present invention, only one of the ceramics can be sputtered or a plurality of sputters can be used depending on the length necessary. When only one of the sputtering is used, since the divided portion does not exist, the arc discharge caused by the divided portion does not occur. Even if a large number of sputterings are connected, since the cylindrical sputtering target constituting this has a length of 500 mm or more, the target length can be constituted by a small number. Therefore, compared with the case where a plurality of short strip-shaped targets are connected to form a long cylindrical sputtering target, the number of divided portions is small, and the number of arc discharges caused by the divided portions is generated. less.

以往的熔射法中,雖可製造出一體化且具有500mm以上的長度之長條狀的陶瓷圓筒狀濺鍍靶材,但藉由熔射法所得之圓筒形濺鍍靶材,相對密度較高也僅有70%出頭。因此,使用藉由熔射法所得之圓筒形濺鍍靶材來進行濺鍍時,電弧放電的產生次數會變多。本發明之陶瓷圓筒形濺鍍靶材,由於相對密度為95%以上,所以與藉由熔射法所得之圓筒形濺鍍靶材相比,於濺鍍時產生的電弧放電次數較少。 In the conventional spraying method, a long cylindrical ceramic sputtering target having a length of 500 mm or more can be manufactured, but the cylindrical sputtering target obtained by the welding method is relatively The higher density is only 70%. Therefore, when sputtering is performed using a cylindrical sputtering target obtained by a sputtering method, the number of occurrences of arc discharge increases. Since the ceramic cylindrical sputtering target of the present invention has a relative density of 95% or more, the number of arc discharges generated during sputtering is less than that of the cylindrical sputtering target obtained by the sputtering method. .

本發明之陶瓷圓筒形濺鍍靶材,長度為500mm以上,較佳為750mm以上,尤佳為1000mm以上,更佳為1500mm以上。當使用1個本發明之靶材來進行濺鍍時,靶材愈長,愈可進行大面積成膜,且不會產生由分割部所起因之電弧放電。當連接複數個本發明之靶材來進行濺鍍時,靶材愈長,愈可藉由較少個數來構成目標長度,並可減少分割部的數目,所以可減少由該分割部所起因之電弧放電的產生次數。 The ceramic cylindrical sputtering target of the present invention has a length of 500 mm or more, preferably 750 mm or more, particularly preferably 1000 mm or more, and more preferably 1500 mm or more. When one target of the present invention is used for sputtering, the longer the target is, the larger the film formation can be performed, and the arc discharge caused by the divided portion does not occur. When a plurality of targets of the present invention are connected to perform sputtering, the longer the target is, the smaller the target length can be formed, and the number of divided portions can be reduced, so that the cause of the division can be reduced. The number of times the arc discharge is generated.

本發明之陶瓷圓筒形濺鍍靶材之長度的上限並無特別限定,從磁控旋轉陰極濺鍍裝置的限制等來看,約為3400mm。 The upper limit of the length of the ceramic cylindrical sputtering target of the present invention is not particularly limited, and is about 3,400 mm from the viewpoint of the limitation of the magnetron rotating cathode sputtering apparatus.

本發明之陶瓷圓筒形濺鍍靶材,其內徑較佳為100mm以上。為前述內徑時,可藉由旋轉陰極濺鍍方式更有效率地成膜。 The ceramic cylindrical sputtering target of the present invention preferably has an inner diameter of 100 mm or more. In the case of the aforementioned inner diameter, film formation can be more efficiently performed by a rotary cathode sputtering method.

本發明之陶瓷圓筒形濺鍍靶材的真圓度、圓筒度及偏轉公差,較佳為1mm以內,尤佳為0.5mm以內,更佳為0.1mm以內。真圓度、圓筒度及偏轉公差愈小,愈不易產生電弧放電,故較佳。 The roundness, the cylindricality and the deflection tolerance of the ceramic cylindrical sputtering target of the present invention are preferably within 1 mm, more preferably within 0.5 mm, and even more preferably within 0.1 mm. The smaller the roundness, the cylinder and the deflection tolerance, the more difficult it is to generate an arc discharge, so it is preferable.

本發明之陶瓷圓筒形濺鍍靶材,其相對密度為95%以上,較佳為99%以上,尤佳為99.5%以上。靶材的相對密度愈高,愈可防止由濺鍍時的熱衝擊或溫度差等所起因之靶材的破裂,能夠不浪費而有效地活用靶材厚度。此外,可降低粒子及電弧放電的產生,得到良好的膜質。前述相對密度的上限並無特別限制,通常為100%。 The ceramic cylindrical sputtering target of the present invention has a relative density of 95% or more, preferably 99% or more, and particularly preferably 99.5% or more. The higher the relative density of the target, the more the target material can be prevented from being broken by thermal shock or temperature difference during sputtering, and the thickness of the target can be effectively utilized without wasting. In addition, the generation of particles and arc discharge can be reduced, and a good film quality can be obtained. The upper limit of the aforementioned relative density is not particularly limited and is usually 100%.

本發明之陶瓷圓筒形濺鍍靶材的材料之陶瓷的種類,並無特別限制,例如可列舉出氧化銦-氧化錫系材料(ITO)、氧化鋁-氧化鋅系材料(AZO)及氧化銦-氧化鎵-氧化鋅系材料(IGZO)等。 The type of ceramic of the material of the ceramic cylindrical sputtering target of the present invention is not particularly limited, and examples thereof include an indium oxide-tin oxide-based material (ITO), an alumina-zinc oxide-based material (AZO), and oxidation. Indium-gallium oxide-zinc oxide-based material (IGZO) or the like.

當陶瓷為ITO時,本靶材中之Sn的含量,以SnO2量換算較佳為1至10質量%,尤佳為2至10質量%,更佳為3至10質量%。當Sn的含量為前述範圍內時,乃具有靶材成為低電阻之優點。 When the ceramic is ITO, the content of Sn in the target is preferably from 1 to 10% by mass, particularly preferably from 2 to 10% by mass, and more preferably from 3 to 10% by mass, in terms of the amount of SnO 2 . When the content of Sn is within the above range, there is an advantage that the target has a low electrical resistance.

當陶瓷為AZO時,本靶材中之Al的含量,以Al2O3量換算較佳為0.1至5質量%,尤佳為1至5質量%,更佳為2至5質量%。當Al的含量為前述範圍內時,乃具有靶材成為低電阻 之優點。 When the ceramic is AZO, the content of Al in the target is preferably from 0.1 to 5% by mass, particularly preferably from 1 to 5% by mass, more preferably from 2 to 5% by mass, in terms of the amount of Al 2 O 3 . When the content of Al is within the above range, there is an advantage that the target has a low electrical resistance.

當陶瓷為IGZO時,較佳者為,本靶材中之In的含量,以In2O3量換算為40至60質量%、Ga的含量以Ga2O3量換算為20至50質量%、Zn的含量以ZnO量換算為5至30質量%,尤佳者為,In的含量以In2O3量換算為40至55質量%、Ga的含量以Ga2O3量換算為25至35質量%、Zn的含量以ZnO量換算為15至30質量%,更佳者為,In的含量以In2O3量換算為40至50質量%、Ga的含量以Ga2O3量換算為25至35質量%、Zn的含量以ZnO量換算為20至30質量%。當In、Ga及Zn的含量為前述範圍內時,乃具有可藉由濺鍍得到良好的TFT(薄膜電晶體:Thin Film Transistor)特性之優點。 When the ceramic is IGZO, it is preferable that the content of In in the target is 40 to 60% by mass in terms of the amount of In 2 O 3 , and the content of Ga is 20 to 50% by mass in terms of the amount of Ga 2 O 3 . , Zn in an amount in terms of the content of ZnO is 5 to 30% by mass, and particularly preferably to those, in the content of in 2 O 3 in terms of an amount of 40 to 55% by mass, the content of Ga 2 O 3 to 25 in terms of the amount of Ga The content of 3% by mass of Zn is 15 to 30% by mass in terms of the amount of ZnO, and more preferably, the content of In is 40 to 50% by mass in terms of the amount of In 2 O 3 , and the content of Ga is converted in terms of Ga 2 O 3 amount. It is 25 to 35 mass%, and the content of Zn is 20 to 30 mass% in terms of the amount of ZnO. When the content of In, Ga, and Zn is within the above range, there is an advantage that a good TFT (Thin Film Transistor) property can be obtained by sputtering.

<陶瓷圓筒形濺鍍靶> <Ceramic cylindrical sputtering target>

本發明之陶瓷圓筒形濺鍍靶,係藉由接合材料,將前述陶瓷圓筒形濺鍍靶材接合於支承管而成。 The ceramic cylindrical sputtering target of the present invention is obtained by bonding the ceramic cylindrical sputtering target to a support tube by a bonding material.

前述支承管,通常具有可將陶瓷圓筒形濺鍍靶材接合之圓筒形狀。支承管的種類並無特別限制,可因應靶材,從以往所使用之支承管中適當地選擇使用。例如可列舉出不鏽鋼、鈦等作為支承管的材料。 The aforementioned support tube usually has a cylindrical shape in which a ceramic cylindrical sputtering target can be joined. The type of the support tube is not particularly limited, and can be appropriately selected from conventional support tubes used in accordance with the target. For example, stainless steel, titanium, or the like can be cited as a material for the support tube.

前述接合材料的種類亦無特別限制,可因應靶材,從以往所使用之接合材料中適當地選擇使用。例如可列舉出銦製的焊料等作為接合材料。 The type of the bonding material is not particularly limited, and can be appropriately selected from conventional bonding materials depending on the target. For example, a solder made of indium or the like can be cited as a bonding material.

陶瓷圓筒形濺鍍靶材,可於1個支承管的外側接合1個,或是在同一軸線上排列2個以上來接合。當排列2個以上來接合時,各陶瓷圓筒形濺鍍靶材間的間隙,亦即分割部的長度, 通常為0.05至0.5mm,較佳為0.05至0.3mm,尤佳為0.05mm。分割部的長度愈短,濺鍍時愈不易產生電弧放電,但未達0.05mm時,由於接合時或濺鍍時的熱膨脹,有時會使靶材彼此碰撞而破裂。 The ceramic cylindrical sputtering target can be joined to the outside of one support tube or two or more on the same axis. When two or more are arranged to be joined, the gap between the ceramic cylindrical sputtering targets, that is, the length of the divided portion, It is usually 0.05 to 0.5 mm, preferably 0.05 to 0.3 mm, and particularly preferably 0.05 mm. The shorter the length of the divided portion, the less likely the arc discharge is to occur during sputtering, but when it is less than 0.05 mm, the target may collide with each other and break due to thermal expansion during bonding or sputtering.

接合方法亦無特別限制,可採用與以往的陶瓷圓筒形濺鍍靶相同之方法。 The joining method is also not particularly limited, and the same method as the conventional ceramic cylindrical sputtering target can be employed.

<陶瓷圓筒形濺鍍靶材的製造方法> <Method of Manufacturing Ceramic Cylindrical Sputtering Target>

本發明之陶瓷圓筒形濺鍍靶材的製造方法,係包含:從含有陶瓷原料粉末及有機添加物之漿液調製出顆粒之步驟1、使前述顆粒CIP成形而製作圓筒形的成形體之步驟2、使前述成形體脫脂之步驟3、以及鍛燒前述脫脂後之成形體之步驟4之陶瓷圓筒形濺鍍靶材的製造方法,其中,前述步驟1中,前述有機添加物的量相對於前述陶瓷原料粉末的量為0.1至1質量%。 The method for producing a ceramic cylindrical sputtering target according to the present invention comprises the steps of: preparing a pellet from a slurry containing a ceramic raw material powder and an organic additive, and shaping the pellet CIP to form a cylindrical shaped body. Step 2, a step 3 of degreasing the formed body, and a method for producing a ceramic cylindrical sputtering target in the step 4 of calcining the formed body after degreasing, wherein the amount of the organic additive in the step 1 is The amount of the ceramic raw material powder is from 0.1 to 1% by mass.

藉由該製造方法,能夠不會產生破裂或變形等,而有效率地製造出前述本發明之陶瓷圓筒形濺鍍靶材。 According to this manufacturing method, the ceramic cylindrical sputtering target of the present invention can be efficiently produced without causing cracking or deformation.

該製造方法中,較佳者為,前述有機添加物含有黏合劑,該黏合劑為聚合度200至400且皂化度60至80mol%之聚乙烯醇。 In the production method, it is preferable that the organic additive contains a binder which is a polyvinyl alcohol having a polymerization degree of 200 to 400 and a degree of saponification of 60 to 80 mol%.

(步驟1) (step 1)

步驟1中,係從含有陶瓷原料粉末及有機添加物之漿液調製出顆粒。 In the step 1, the particles are prepared from a slurry containing a ceramic raw material powder and an organic additive.

從陶瓷原料粉末及有機添加物調製出顆粒,並將該顆粒提供至步驟2的CIP成形,藉此可提升原料的充填性,而得到高密度的成形體。此外,不易產生充填不均,可形成均一的充 填。亦不易產生模壓不均。 The pellets are prepared from the ceramic raw material powder and the organic additive, and the pellets are supplied to the CIP molding of the step 2, whereby the filling property of the raw material can be improved, and a high-density molded body can be obtained. In addition, it is not easy to produce uneven filling, which can form a uniform charge. fill. It is also not easy to produce uneven molding.

陶瓷原料粉末,為可藉由此製造方法來製作出靶材的構成原料之陶瓷之粉末。 The ceramic raw material powder is a ceramic powder which can be used as a constituent material of the target by the production method.

例如,當陶瓷為ITO時,可使用In2O3粉末及SnO2粉末之混合粉末作為陶瓷原料粉末,亦可單獨使用ITO粉末或與In2O3粉末及SnO2粉末混合使用。In2O3粉末、SnO2粉末及ITO粉末,藉由BET(Brunauer-Emmett-Teller)法所測定之比表面積,通常分別為1至40m2/g。In2O3粉末、SnO2粉末及ITO粉末之混合比率,係以使本靶材中之構成元素的含量位於前述範圍內之方式來適當地決定。本製造方法中,當使用In2O3粉末及SnO2粉末之混合粉末作為陶瓷原料粉末時,係確認到陶瓷原料粉末中之SnO2粉末的含量(質量%),可與最終所得之靶材中之以SnO2量換算之Sn的含量(質量%)視為相同。 For example, when the ceramic is ITO, a mixed powder of In 2 O 3 powder and SnO 2 powder may be used as the ceramic raw material powder, or ITO powder may be used alone or in combination with In 2 O 3 powder and SnO 2 powder. The In 2 O 3 powder, the SnO 2 powder, and the ITO powder have a specific surface area as measured by a BET (Brunauer-Emmett-Teller) method, and are usually 1 to 40 m 2 /g, respectively. The mixing ratio of the In 2 O 3 powder, the SnO 2 powder, and the ITO powder is appropriately determined so that the content of the constituent elements in the target is within the above range. In the production method, when a mixed powder of In 2 O 3 powder and SnO 2 powder is used as the ceramic raw material powder, the content (% by mass) of the SnO 2 powder in the ceramic raw material powder is confirmed, and the finally obtained target material can be obtained. The content (% by mass) of Sn converted in terms of the amount of SnO 2 is considered to be the same.

當陶瓷為AZO時,可使用Al2O3粉末及ZnO粉末之混合粉末作為陶瓷原料粉末,亦可單獨使用AZO粉末或與Al2O3粉末及ZnO粉末混合使用。Al2O3粉末、ZnO粉末及AZO粉末,藉由BET法所測定之比表面積,通常分別為1至40m2/g。Al2O3粉末、ZnO粉末及AZO粉末之混合比率,係以使本靶材中之構成元素的含量位於前述範圍內之方式來適當地決定。本製造方法中,當使用Al2O3粉末及ZnO粉末之混合粉末作為陶瓷原料粉末時,係確認到陶瓷原料粉末中之Al2O3粉末的含量(質量%),可與最終所得之靶材中之以Al2O3量換算之Al的含量(質量%)視為相同。 When the ceramic is AZO, a mixed powder of Al 2 O 3 powder and ZnO powder may be used as the ceramic raw material powder, or AZO powder may be used alone or in combination with Al 2 O 3 powder and ZnO powder. The specific surface area of the Al 2 O 3 powder, the ZnO powder, and the AZO powder measured by the BET method is usually 1 to 40 m 2 /g, respectively. The mixing ratio of the Al 2 O 3 powder, the ZnO powder, and the AZO powder is appropriately determined so that the content of the constituent elements in the target is within the above range. In the production method, when a mixed powder of Al 2 O 3 powder and ZnO powder is used as the ceramic raw material powder, the content (% by mass) of the Al 2 O 3 powder in the ceramic raw material powder is confirmed, and the final target can be obtained. The content (% by mass) of Al in terms of the amount of Al 2 O 3 in the material was considered to be the same.

當陶瓷為IGZO時,可使用In2O3粉末、Ga2O3粉末及 ZnO粉末之混合粉末作為陶瓷原料粉末,亦可單獨使用IGZO粉末或與In2O3粉末、Ga2O3粉末及ZnO粉末混合使用。In2O3粉末、Ga2O3粉末、ZnO粉末及IGZO粉末,藉由BET法所測定之比表面積,通常分別為1至40m2/g。In2O3粉末、Ga2O3粉末、ZnO粉末及IGZO粉末之混合比率,係以使本靶材中之構成元素的含量位於前述範圍內之方式來適當地決定。本製造方法中,當使用In2O3粉末、Ga2O3粉末及ZnO粉末之混合粉末作為陶瓷原料粉末時,係確認到陶瓷原料粉末中之In2O3粉末、Ga2O3粉末及ZnO粉末的含量(質量%),分別可與最終所得之靶材中之以In2O3量換算之In的含量(質量%)、以Ga2O3量換算之Ga的含量(質量%)、及以ZnO量換算之Zn的含量(質量%)視為相同。 When the ceramic is IGZO, a mixed powder of In 2 O 3 powder, Ga 2 O 3 powder, and ZnO powder may be used as the ceramic raw material powder, or IGZO powder or In 2 O 3 powder, Ga 2 O 3 powder and ZnO powder is used in combination. The specific surface area of the In 2 O 3 powder, the Ga 2 O 3 powder, the ZnO powder, and the IGZO powder measured by the BET method is usually 1 to 40 m 2 /g, respectively. The mixing ratio of the In 2 O 3 powder, the Ga 2 O 3 powder, the ZnO powder, and the IGZO powder is appropriately determined so that the content of the constituent elements in the target is within the above range. In the production method, when a mixed powder of In 2 O 3 powder, Ga 2 O 3 powder, and ZnO powder is used as the ceramic raw material powder, In 2 O 3 powder, Ga 2 O 3 powder, and the ceramic raw material powder are confirmed. The content (% by mass) of the ZnO powder, the content of In (% by mass) in terms of the amount of In 2 O 3 in the finally obtained target, and the content of Ga (% by mass) in terms of the amount of Ga 2 O 3 The content (% by mass) of Zn in terms of the amount of ZnO is considered to be the same.

當使用混合有粒徑不同之2種以上的粉末所得之陶瓷原料粉末時,由於粒徑較小的粉末之粒子會進入於粒徑較大的粉末之粒子間,故具有成形體的密度高,且亦提升燒結體的強度之優點。 When a ceramic raw material powder obtained by mixing two or more kinds of powders having different particle diameters is used, since the particles of the powder having a small particle diameter enter between the particles of the powder having a large particle diameter, the density of the molded body is high. It also increases the strength of the sintered body.

粉末的混合方法並無特別限制,例如可將各粉末及氧化鋯球(zirconia ball)放入於熔罐中,並進行球磨(ball mill)混合。 The mixing method of the powder is not particularly limited. For example, each powder and zirconia ball can be placed in a crucible and ball milled.

前述有機添加物,係用以將漿液或成形體的性狀調整地更佳而添加之物質。有機添加物,可列舉出黏合劑、分散劑及可塑劑等。 The organic additive is a substance which is preferably added to adjust the properties of the slurry or the molded body. Examples of the organic additive include a binder, a dispersant, and a plasticizer.

步驟1中,有機添加物的量相對於陶瓷原料粉末的量而言為0.1至1.2質量%,較佳為0.2至1.0質量%,尤佳為0.4至0.8質量%。當有機添加物的前述調配量較1.2質量%更多時,可能於脫介質時之成形體的強度大幅降低,而容易產生脫脂破 裂,或是在脫脂後,成形體中的空孔增多,不易形成高密度化。當有機添加物的前述調配量較0.1質量%更少時,可能無法得到各成分的充分效果。將有機添加物的調配量設為前述範圍內時,可製造出長度為500mm以上且相對密度為95%以上,並且為一體化靶材之陶瓷圓筒形濺鍍靶材。 In the step 1, the amount of the organic additive is from 0.1 to 1.2% by mass, preferably from 0.2 to 1.0% by mass, particularly preferably from 0.4 to 0.8% by mass, based on the amount of the ceramic raw material powder. When the aforementioned compounding amount of the organic additive is more than 1.2% by mass, the strength of the formed body at the time of the dissociation may be greatly lowered, and the degreasing breakage is likely to occur. After cracking, or after degreasing, the number of voids in the formed body increases, and it is difficult to form a high density. When the aforementioned compounding amount of the organic additive is less than 0.1% by mass, a sufficient effect of each component may not be obtained. When the compounding amount of the organic additive is within the above range, a ceramic cylindrical sputtering target having a length of 500 mm or more and a relative density of 95% or more and an integrated target can be produced.

黏合劑,用以在成形體中將陶瓷原料粉末黏合,以提高成形體的強度而添加。黏合劑,可使用於一般所知的粉末燒結法中製得成形體時所通常使用之黏合劑。 The binder is used to bond the ceramic raw material powder in the formed body to increase the strength of the formed body. The binder can be used for a binder which is usually used in the production of a shaped body in a powder sintering method generally known.

當中較佳為聚乙烯醇(PVA),更佳為聚合度200至400且皂化度60至80mol%之聚乙烯醇。使用此般黏合劑時,即使黏合劑的添加量為少量,亦可調製出於CIP成形時容易粉碎之顆粒,而得到可藉由CIP成形緊密地充填陶瓷原料粉末且不易破裂之成形體,結果,能夠不會產生破裂或變形,而製造出高密度且為長條狀的陶瓷圓筒形靶材。例如,將有機添加物的調配量設為前述範圍內,且進一步使用前述黏合劑時,可穩定地製造出長度為750mm以上且相對密度為95%以上,並且為一體化靶材之陶瓷圓筒形靶材。 Among them, polyvinyl alcohol (PVA) is preferred, and polyvinyl alcohol having a degree of polymerization of 200 to 400 and a degree of saponification of 60 to 80 mol% is more preferred. When such a binder is used, even if the amount of the binder added is small, particles which are easily pulverized during CIP molding can be prepared, and a molded body which can be closely filled with the ceramic raw material powder by CIP molding and which is not easily broken can be obtained. A ceramic cylindrical target having a high density and a long strip shape can be produced without causing cracking or deformation. For example, when the amount of the organic additive is within the above range, and further using the above-mentioned binder, a ceramic cylinder having a length of 750 mm or more and a relative density of 95% or more and an integrated target can be stably produced. Shape target.

一般而言,當欲藉由使陶瓷粉末成形、脫脂及鍛燒之步驟來製作長條狀的陶瓷圓筒形靶材時,在成形、脫脂及鍛燒中的任一項步驟中,會產生破裂。因此,於以往的製造方法中,無法製造出長度為500mm以上且相對密度為95%以上,並且為一體化靶材之陶瓷圓筒形濺鍍靶材。成形時的破裂,在CIP成形體的情形,可考量為在形成為長條狀,亦即形成為大型時,因回彈力變大所引起。在鑄造成形體的情形,可考量為以水分不均或粒 子偏析為起點而產生破裂。若增加黏合劑的量,雖可消除成形破裂,但當增加黏合劑的量時,於脫脂或燒結時,圓筒成形體會脆化而破裂。此外,過度的黏合劑添加,會使黏合劑偏析而成為脫脂破裂的起點,故不佳。 In general, when a long cylindrical ceramic cylindrical target is to be produced by a step of forming, degreasing, and calcining a ceramic powder, it may be produced in any of the steps of forming, degreasing, and calcining. rupture. Therefore, in the conventional production method, a ceramic cylindrical sputtering target having a length of 500 mm or more and a relative density of 95% or more and an integrated target cannot be produced. The crack at the time of molding is considered to be caused by a large elastic force when the CIP molded body is formed into a long shape, that is, when it is formed in a large shape. In the case of casting a shaped body, it is considered to be uneven or granulated with moisture. Sub-segregation is the starting point and a crack occurs. If the amount of the binder is increased, the forming crack can be eliminated, but when the amount of the binder is increased, the cylindrical formed body is brittle and cracked at the time of degreasing or sintering. In addition, excessive addition of the binder causes the binder to segregate and becomes the starting point of the degreasing crack, which is not preferable.

本發明之製造方法中,藉由使用前述黏合劑,即使是長條狀的成形體,亦可藉由添加少量的黏合劑而得到不易破裂的成形體,因此,於脫脂及鍛燒中,圓筒成形體不易破裂。亦即,當使用前述黏合劑時,在成形、脫脂及鍛燒中的任一項步驟中,均不易產生破裂,而能夠穩定地得到長條狀的陶瓷圓筒形靶材。 In the production method of the present invention, by using the above-mentioned binder, a long-sized molded body can be obtained by adding a small amount of a binder, thereby obtaining a molded body which is not easily broken. Therefore, in the degreasing and calcining, the round The formed body is not easily broken. That is, when the above-mentioned binder is used, cracking is less likely to occur in any of the steps of forming, degreasing, and calcining, and a long cylindrical ceramic target can be stably obtained.

之所以藉由前述黏合劑的使用而可得到此般效果,可考量為下列理由。 The reason why the above effects can be obtained by the use of the above-mentioned binder can be considered for the following reasons.

例如當藉由將含有原料粉末、黏合劑及水之漿液進行噴霧乾燥(spraydry)來調製顆粒時,在使漿液噴霧所形成之液滴中,由於乾燥使水往液滴的外側移動,且原料粉末及黏合劑亦一同往液滴的外側移動。水在液滴外揮發,結果,使原料粉末及黏合劑緊密地凝聚於液滴表面部,而形成具有堅硬覆膜之顆粒。該顆粒,由於原料粉末、黏合劑及水往外周部移動,所以呈中空,其中空部成為負壓。為了消除其壓力差,顆粒會凹陷。由於此般凹陷的顆粒堅硬,所以成形時不易被粉碎。因此,成形體無法形成緊密化,而產生成為破裂起點之粗大缺陷。之所以於製作長條狀的成形體時會產生破裂,可將此視為主要因素。 For example, when the granules are prepared by spray-drying a slurry containing a raw material powder, a binder, and water, in the droplets formed by the slurry spray, water is moved to the outside of the droplets by drying, and the raw materials are moved. The powder and binder also move toward the outside of the droplet. The water is volatilized outside the droplets, and as a result, the raw material powder and the binder are tightly aggregated on the surface portion of the droplet to form particles having a hard coating. Since the raw material powder, the binder, and the water move toward the outer peripheral portion, the particles are hollow, and the hollow portion becomes a negative pressure. In order to eliminate the pressure difference, the particles will sag. Since the depressed particles are hard, they are not easily pulverized during forming. Therefore, the formed body cannot be compacted, and a large defect which becomes a starting point of cracking is generated. This is considered to be a major factor in the occurrence of cracks in the production of long strip-shaped formed bodies.

當使用聚合度200至400之聚合度低的黏合劑時,黏合劑的成分之高分子的纏繞較少,可得到黏度低的漿液。在將黏合比設為一定來使用聚合度低的黏合劑時,可製作出低黏度且 原料粉末的濃度高之漿液。因此,於漿液的噴霧時,由於水在液滴中的移動少,所以顆粒內部不易形成中空而不易凹陷。顆粒中,由於黏合劑的纏繞較少,所以黏合劑的結合力弱,顆粒可簡單地粉碎。此外,當將高濃度漿液進行噴霧時,由於原料粉末及黏合劑無法凝聚於液滴的表面部,所以表面部不易變得緊密,使顆粒的強度降低。因為此種理由,可視為能夠得到藉由CIP成形緊密地充填陶瓷原料粉末且不易破裂之成形體。 When a binder having a polymerization degree of 200 to 400 is used, the polymer of the component of the binder is less entangled, and a slurry having a low viscosity can be obtained. When the adhesive ratio is set to be constant and a binder having a low degree of polymerization is used, a low viscosity can be produced and A slurry having a high concentration of the raw material powder. Therefore, at the time of spraying of the slurry, since the movement of water in the droplets is small, it is difficult to form a hollow inside the particles and it is not easy to be recessed. In the granules, since the entanglement of the binder is small, the binding force of the binder is weak, and the granules can be simply pulverized. Further, when the high-concentration slurry is sprayed, since the raw material powder and the binder cannot be aggregated on the surface portion of the droplet, the surface portion is less likely to be tight, and the strength of the particles is lowered. For this reason, it can be considered that a molded body in which the ceramic raw material powder is closely packed by CIP molding and is not easily broken can be obtained.

此外,當使用皂化度60至80mol%之皂化度低的黏合劑時,在由原料粉末、黏合劑及水所構成之漿液中,黏合劑的疏水基吸附於粉末,可得到分散性高之漿液。在霧點以上的溫度中將漿液進行噴霧時,黏合劑會於短時間內析出而不會往液滴的外側移動,所以可在黏合劑均一地分散於顆粒全體之狀態下乾燥,而得到表面部的強度低之顆粒。因為此種理由,可考量為能夠得到藉由CIP成形緊密地充填陶瓷原料粉末且不易破裂之成形體。 Further, when a binder having a low degree of saponification having a degree of saponification of 60 to 80 mol% is used, in the slurry composed of the raw material powder, the binder, and water, the hydrophobic group of the binder is adsorbed to the powder, and a highly dispersible slurry can be obtained. . When the slurry is sprayed at a temperature above the fog point, the binder is precipitated in a short time without moving to the outside of the droplet, so that the binder can be uniformly dispersed in the entire state of the particles to obtain a surface. Part of the low strength particles. For this reason, it can be considered that a molded body in which the ceramic raw material powder is tightly packed by CIP molding and is not easily broken can be obtained.

如上述般,黏合劑之聚乙烯醇的聚合度及皂化度均小者,可得到容易粉碎之顆粒。因此,黏合劑之聚乙烯醇的聚合度較佳為400以下,皂化度較佳為80mol%以下。另一方面,當聚合度及皂化度過小時,所得之成形體變得過軟,使處理性降低。因此,黏合劑之聚乙烯醇的聚合度較佳為200以上,皂化度較佳為60mol%以上。黏合劑之聚乙烯醇尤佳為聚合度為250至350,皂化度為65至75mol%,更佳為聚合度為280至320,皂化度為68至72mol%。 As described above, the degree of polymerization and the degree of saponification of the polyvinyl alcohol of the binder are small, and particles which are easily pulverized can be obtained. Therefore, the degree of polymerization of the polyvinyl alcohol of the binder is preferably 400 or less, and the degree of saponification is preferably 80 mol% or less. On the other hand, when the degree of polymerization and the degree of saponification are too small, the obtained molded body becomes too soft, and the handleability is lowered. Therefore, the degree of polymerization of the polyvinyl alcohol of the binder is preferably 200 or more, and the degree of saponification is preferably 60 mol% or more. The polyvinyl alcohol of the binder preferably has a degree of polymerization of from 250 to 350, a degree of saponification of from 65 to 75 mol%, more preferably a degree of polymerization of from 280 to 320, and a degree of saponification of from 68 to 72 mol%.

黏合劑之聚乙烯醇的添加量,相對於陶瓷原料粉末 較佳為0.1至1.0質量%,尤佳為0.1至0.65質量%,更佳為0.1至0.3質量%。聚乙烯醇的添加量愈多,塑性上升而不易產生成形破裂,但另一方面於脫介質時之成形體的強度大幅降低,而容易產生脫脂破裂,或是在脫脂後,成形體中的空孔增多,不易形成高密度化。因此,較佳係位於前述範圍內。 The amount of polyvinyl alcohol added to the binder relative to the ceramic raw material powder It is preferably from 0.1 to 1.0% by mass, particularly preferably from 0.1 to 0.65% by mass, still more preferably from 0.1 to 0.3% by mass. The more the amount of polyvinyl alcohol added, the higher the plasticity and the less the formation rupture, but on the other hand, the strength of the formed body at the time of de-mediation is greatly reduced, and it is easy to cause degreasing cracking, or after the degreasing, the void in the formed body The number of holes increases, and it is difficult to form a high density. Therefore, it is preferred to be within the aforementioned range.

分散劑,係用以提高漿液中之原料粉末及黏合劑的分散性而添加。分散劑,例如可列舉出多元羧酸銨、聚丙烯酸銨等。 The dispersant is added to increase the dispersibility of the raw material powder and the binder in the slurry. Examples of the dispersant include ammonium polybasic acid and ammonium polyacrylate.

可塑劑,係用以提高成形體的可塑性而添加。可塑劑,例如可列舉出聚乙二醇(PRG)、乙二醇(EG)等。 A plasticizer is added to increase the plasticity of the formed body. Examples of the plasticizer include polyethylene glycol (PRG), ethylene glycol (EG), and the like.

調製含有陶瓷原料粉末及有機添加物之漿液時所使用之分散介質並無特別限制,可因應目的,從水、醇類等適當地選擇使用。 The dispersion medium to be used in the preparation of the slurry containing the ceramic raw material powder and the organic additive is not particularly limited, and may be appropriately selected from water, alcohol, etc. depending on the purpose.

調製含有陶瓷原料粉末及有機添加物之漿液之方法並無特別限制,例如可使用將陶瓷原料粉末、有機添加物及分散介質放入於熔罐中,並進行球磨混合之方法。 The method of preparing the slurry containing the ceramic raw material powder and the organic additive is not particularly limited, and for example, a method of placing the ceramic raw material powder, the organic additive, and the dispersion medium in a crucible and performing ball milling can be used.

從漿液調製出顆粒之方法並無特別限制,例如可使用噴霧乾燥法、轉動粒化法、擠壓粒化法等。此等當中,從顆粒的流動性高且容易製作出成形時容易粉碎之顆粒等觀點來看,較佳為噴霧乾燥法。噴霧乾燥法的條件並無特別限制,可適當地選擇陶瓷原料粉末的粒化中所一般使用之條件來實施。 The method of preparing the particles from the slurry is not particularly limited, and for example, a spray drying method, a rotary granulation method, an extrusion granulation method, or the like can be used. Among these, from the viewpoint of high fluidity of the particles and easy production of particles which are easily pulverized during molding, a spray drying method is preferred. The conditions of the spray drying method are not particularly limited, and can be suitably carried out by selecting conditions generally used in the granulation of the ceramic raw material powder.

(步驟2) (Step 2)

步驟2中,係使在步驟1中所調製之顆粒CIP成形(Cold Isostatic Pressing(冷均壓成形))而製作圓筒形的成形體。當 藉由CIP成形來製作成形體時,可得到密度均一且方向性少,即使進行脫脂及鍛燒亦不易破裂之長條狀圓筒形的成形體。 In the step 2, the pellet CIP prepared in the step 1 was molded (Cold Isostatic Pressing) to prepare a cylindrical molded body. when When a molded body is produced by CIP molding, a long cylindrical shape molded body which is uniform in density and small in directivity and which is not easily broken by degreasing and calcination can be obtained.

CIP成形中所使用之模具,可使用CIP成形所通常使用之可製作長條狀圓筒形的成形體之模具,例如具有可將上下方密閉之蓋,且具有圓柱狀的心型(芯棒)之圓筒形狀的胺酯橡膠模具等。 For the mold used for CIP molding, a mold which can be used for CIP molding to form a long cylindrical body, for example, a lid which can seal the upper and lower sides and a cylindrical heart shape (core rod) can be used. A cylindrical amine ester rubber mold or the like.

CIP成形時的壓力,通常為800kgf/cm2以上,較佳為1000 kgf/cm2以上,尤佳為3000 kgf/cm2以上。壓力愈高,愈可緊密地充填顆粒,可將成形體形成為高密度化及高強度化。CIP成形時之壓力的上限值並無特別限制,通常為5000kgf/cm2The pressure at the time of CIP molding is usually 800 kgf/cm 2 or more, preferably 1000 kgf/cm 2 or more, and more preferably 3000 kgf/cm 2 or more. The higher the pressure, the more closely the particles can be filled, and the molded body can be formed into a high density and a high strength. The upper limit of the pressure at the time of CIP molding is not particularly limited, but is usually 5000 kgf/cm 2 .

CIP成形中,於加壓後進行減壓時,在壓力為200kgf/cm2以下的範圍中,較佳將減壓速度設為200kgf/cm2.h以下,尤佳為設為100kgf/cm2.h以下,更佳為設為50kgf/cm2.h以下。在200kgf/cm2以下的壓力範圍之減壓中,由於成形體所產生之彈回力較強,所以成形體容易破裂。當將減壓速度設為200kgf/cm2.h以下時,可弱化彈回力,使成形體不易破裂。當以此般減壓速度進行減壓時,可穩定地製造出高密度且為長條狀的陶瓷圓筒形靶材。例如,當使用前述黏合劑,將有機添加物的調配量設為前述範圍內,且進一步採用前述減壓速度時,可穩定地製造出長度為1000mm以上且相對密度為95%以上,並且為一體化靶材之陶瓷圓筒形靶材。減壓速度的下限值並無特別限制,通常為30kgf/cm2CIP molding, when reduced to a pressurized at a pressure in the range of 2 or less of 200kgf / cm, the reduced speed to the preferred 200kgf / cm 2. Below h, it is particularly preferable to set it to 100 kgf/cm 2 . Below h, it is more preferably set to 50 kgf/cm 2 . h below. In the pressure reduction in the pressure range of 200 kgf/cm 2 or less, the molded body is likely to be broken due to the strong springback force generated by the molded body. When the decompression speed was set to 200 kgf/cm 2 . When h is below, the rebound force can be weakened, so that the formed body is not easily broken. When the pressure is reduced at this reduced pressure rate, a ceramic cylindrical target having a high density and a long strip shape can be stably produced. For example, when the binder is used, the blending amount of the organic additive is within the above range, and when the pressure reducing speed is further employed, the length of 1000 mm or more and the relative density of 95% or more can be stably produced, and integrated. A ceramic cylindrical target for a target. The lower limit of the decompression speed is not particularly limited, and is usually 30 kgf/cm 2 .

在壓力高於200kgf/cm2的範圍中之減壓速度並無特別限制,通常為200至1000kgf/cm2.h。 The pressure reduction speed in the range of the pressure higher than 200 kgf/cm 2 is not particularly limited, and is usually 200 to 1000 kgf/cm 2 . h.

(步驟3) (Step 3)

步驟3中,係使步驟2中所製作之成形體脫脂。脫脂係藉由加熱成形體來進行。 In the step 3, the formed body produced in the step 2 is degreased. Degreasing is carried out by heating the molded body.

脫脂溫度通常為600至800℃,較佳為700至800℃,尤佳為750至800℃。脫脂溫度愈高,成形體的強度愈高,但當超過800℃時,會引起成形體的收縮,所以較佳係在800℃以下進行脫脂。 The degreasing temperature is usually from 600 to 800 ° C, preferably from 700 to 800 ° C, particularly preferably from 750 to 800 ° C. The higher the degreasing temperature, the higher the strength of the molded body. However, when it exceeds 800 ° C, the shrinkage of the molded body is caused. Therefore, it is preferred to carry out degreasing at 800 ° C or lower.

脫脂時間通常為3至10小時,較佳為5至10小時,尤佳為10小時。脫脂時間愈長,成形體的強度愈高,但在10小時的加熱時,脫脂大致完成,即使使延長脫脂時間較此更長,成形體的強度亦不會提高。 The degreasing time is usually from 3 to 10 hours, preferably from 5 to 10 hours, and particularly preferably from 10 hours. The longer the degreasing time, the higher the strength of the molded body, but the degreasing is substantially completed when heated for 10 hours, and the strength of the molded body is not improved even if the extended degreasing time is longer.

升溫速度,在400℃為止的溫度範圍中,較佳為50℃/h以下,尤佳為30℃/h以下,更佳為20℃/h以下。當在400℃之前進行脫介質,且在脫介質中高速升溫時,成形體容易破裂,所以在400℃為止中,較佳是以50℃/h以下的低速來升溫。當將升溫速度設為前述範圍時,可穩定地製造出高密度且為長條狀的陶瓷圓筒形靶材。例如當使用前述黏合劑,將有機添加物的調配量設為前述範圍內,將CIP成形時的減壓速度設為前述範圍內,且進一步將脫脂時的升溫速度設為前述範圍內時,可穩定地製造出長度為1500mm以上且相對密度為95%以上,並且為一體靶材之陶瓷圓筒形靶材。在高於400℃的溫度中,由於可完成脫介質而縮短前置時間(lead time),所以可在更高度速度,例如約80℃/h升溫。 The temperature increase rate is preferably 50 ° C / h or less, more preferably 30 ° C / h or less, and still more preferably 20 ° C / h or less in the temperature range of 400 ° C. When the medium is removed before 400 ° C and the temperature is raised at a high speed in the medium, the molded body is easily broken. Therefore, it is preferred to raise the temperature at a low speed of 50 ° C / h or less at 400 ° C. When the temperature increase rate is set to the above range, a ceramic cylindrical target having a high density and a long strip shape can be stably produced. For example, when the amount of the organic additive to be added is within the above range, and the pressure reduction rate during CIP molding is within the above range, and the temperature increase rate at the time of degreasing is within the above range, A ceramic cylindrical target having a length of 1500 mm or more and a relative density of 95% or more and an integral target is stably produced. In a temperature higher than 400 ° C, since the lead time can be shortened by removing the medium, the temperature can be raised at a higher height, for example, about 80 ° C / h.

(步驟4) (Step 4)

步驟4中,係鍛燒在步驟3中經脫脂後之成形體。 In the step 4, the formed body which has been degreased in the step 3 is calcined.

鍛燒爐並無特別限定,可使用以往陶瓷靶材的製造中所使用之鍛燒爐。 The calcining furnace is not particularly limited, and a calcining furnace used in the production of a conventional ceramic target can be used.

鍛燒溫度,當陶瓷為ITO時,通常為1450至1700℃,較佳為1500至1650℃,尤佳為1550至1600℃。當陶瓷為AZO或IGZO時,通常為1250至1500℃,較佳為1300至1450℃,尤佳為1350至1400℃。鍛燒溫度愈高,愈可得到高密度的靶材,但過高時會使靶材的燒結組織變得肥大而容易破裂。 The calcination temperature, when the ceramic is ITO, is usually from 1,450 to 1,700 ° C, preferably from 1,500 to 1,650 ° C, particularly preferably from 1,550 to 1,600 ° C. When the ceramic is AZO or IGZO, it is usually 1250 to 1500 ° C, preferably 1300 to 1450 ° C, and particularly preferably 1350 to 1400 ° C. The higher the calcination temperature, the higher the target can be obtained, but when it is too high, the sintered structure of the target becomes fat and easily broken.

鍛燒時間,通常為3至30小時,較佳為5至10小時,尤佳為5至8小時。鍛燒時間愈長,靶材愈容易形成高密度化,但過長時會使靶材的燒結組織變得肥大而容易破裂。 The calcination time is usually from 3 to 30 hours, preferably from 5 to 10 hours, particularly preferably from 5 to 8 hours. The longer the calcination time, the easier the target becomes to be denser, but when it is too long, the sintered structure of the target becomes fat and easily broken.

升溫速度通常為100至500℃/h。降溫速度通常為10至100℃/h,較佳為10至50℃/h,尤佳為10至30℃/h。降溫速度愈小,愈不易引起因熱應力差所導致之破裂,但在小於10℃/h時,熱應力差通常不變。 The rate of temperature rise is usually from 100 to 500 ° C / h. The cooling rate is usually from 10 to 100 ° C / h, preferably from 10 to 50 ° C / h, particularly preferably from 10 to 30 ° C / h. The smaller the cooling rate, the less likely it is to cause cracking due to thermal stress difference, but at less than 10 °C / h, the thermal stress difference usually does not change.

鍛燒環境氣體並無特別限制,通常為大氣環境或氧氣環境。 The calcined ambient gas is not particularly limited, and is usually an atmospheric environment or an oxygen atmosphere.

所得之燒結體,可施以切削加工等之必要的加工以作為濺鍍靶材使用。 The obtained sintered body can be used as a sputtering target by performing necessary processing such as cutting.

實施例 Example

實施例及比較例中所得之濺鍍靶材的評估方法如下所述。 The evaluation methods of the sputtering targets obtained in the examples and the comparative examples are as follows.

1.相對密度 Relative density

濺鍍靶材的相對密度係根據阿基米得法來測定。具 體而言,以體積(=濺鍍靶燒結體的水中重量/測量溫度中的水比重)除上濺鍍靶材的空氣中重量,依據下列式(X)求取理論密度ρ(g/cm3),並以相對於理論密度之百分率之值作為相對密度(單位:%)。 The relative density of the sputter target is determined according to the Archimedes method. Specifically, the theoretical density ρ (g/cm) is obtained according to the following formula (X) by dividing the volume (= the weight of water in the sintered body of the sputtering target/the specific gravity of water in the measured temperature) by the weight of the air in the sputtering target. 3 ), and the value relative to the theoretical density as the relative density (unit: %).

(式(X)中,C1至Ci分別表示靶材之構成物質的含量(重量%),ρ1至ρi表示對應於C1至Ci之各構成物質的密度(g/cm3)。 (In the formula (X), C 1 to C i respectively represent the content (% by weight) of the constituent material of the target, and ρ 1 to ρ i represent the density (g/cm 3 ) of each constituent substance corresponding to C 1 to C i . ).

2.濺鍍靶材或成形體之破裂的評估 2. Evaluation of cracking of a sputter target or formed body

以目視來觀察濺鍍靶材及成形體,當濺鍍靶材或成形體未觀察到破裂時,係評估為「A」,觀察到破裂時,評估為「B」。 The sputtering target and the molded body were visually observed, and when the sputtering target or the molded body was not observed to be broken, it was evaluated as "A", and when the crack was observed, it was evaluated as "B".

<ITO靶> <ITO target> [實施例1] [Example 1]

以使SnO2粉末的含量成為1質量%之方式,調配由BET法所測定之比表面積為10m2/g之SnO2粉末及由BET法所測定之比表面積為10m2/g之In2O3粉末,於熔罐中藉由鋯石球進行球磨混合,而調製出陶瓷原料粉末。 So that the content of SnO 2 powder becomes 1% by mass of the embodiment, the formulation the specific surface area determined the by the BET method is 10m 2 / g of SnO 2 powder, and measured the specific surface area by the BET method is 10m 2 / g of In 2 O 3 powder, ball-milled by zircon balls in a crucible to prepare a ceramic raw material powder.

於該熔罐中,相對於陶瓷原料粉末加入0.1質量%的聚乙烯醇(聚合度:280、皂化度68mol)作為黏合劑,相對於陶瓷原料粉末加入0.3質量%的多元羧酸銨作為分散劑,以及相對於陶瓷原料粉末加入15質量%的水作為分散介質,進行球磨混合而調製出漿液。有機添加物的合計量(聚乙烯醇量與多元羧酸銨量之合 計)相對於陶瓷原料粉末的量之比率為0.4質量%。 In the crucible, 0.1% by mass of polyvinyl alcohol (degree of polymerization: 280, degree of saponification 68 mol) was added as a binder to the ceramic raw material powder, and 0.3% by mass of ammonium polycarboxylate was added as a dispersing agent to the ceramic raw material powder. And adding 15 mass% of water to a ceramic raw material powder as a dispersion medium, and ball-mixing and mixing to prepare a slurry. The total amount of organic additives (the combination of the amount of polyvinyl alcohol and the amount of ammonium polycarboxylate) The ratio of the amount relative to the amount of the ceramic raw material powder was 0.4% by mass.

將該漿液供給至噴霧乾燥裝置,在原子化(atomize)轉數10,000rpm、入口溫度250℃的條件下進行噴霧乾燥,而調製出顆粒。 The slurry was supplied to a spray drying apparatus, and spray-dried under the conditions of atomization number of revolutions of 10,000 rpm and an inlet temperature of 250 ° C to prepare pellets.

於具有可將上下方密閉之蓋,且具有外徑為165mm之圓柱狀的心型(芯棒)之內徑210mm(厚度10mm)、長度1219mm之圓筒形狀的胺酯橡膠模具中,一邊使前述顆粒振動一邊充填,將橡膠模具密閉後,以800kgf/cm2的壓力進行CIP成形,而製作出圓筒形的成形體。CIP成形後的減壓速度,在高於200kgf/cm2的壓力範圍中,設為300kgf/cm2.h,在200kgf/cm2以下的壓力範圍中,設為200kgf/cm2.h。所得之成形體的長度為1212mm。 In a urethane-based rubber mold having a cylindrical shape of a core shape (core rod) having an outer diameter of 165 mm and having a cylindrical shape of 210 mm (thickness: 10 mm) and a length of 1,219 mm, After the particle vibration was filled, the rubber mold was sealed, and CIP molding was performed at a pressure of 800 kgf/cm 2 to produce a cylindrical molded body. The decompression speed after CIP molding was set to 300 kgf/cm 2 in a pressure range of more than 200 kgf/cm 2 . h, in the pressure range of 200 kgf/cm 2 or less, it is set to 200 kgf / cm 2 . h. The length of the obtained molded body was 1212 mm.

將該成形體進行加熱脫脂。脫脂溫度設為700℃,脫脂時間設為10小時,升溫速度,在400℃為止的溫度範圍中設為20℃/h,在高於400℃的溫度範圍中設為50℃/h。 The formed body was heated and degreased. The degreasing temperature was 700 ° C, the degreasing time was 10 hours, the temperature increase rate was 20 ° C / h in the temperature range of 400 ° C, and 50 ° C / h in the temperature range higher than 400 ° C.

將脫脂後之成形體進行鍛燒而製作燒結體。鍛燒係在大氣環境中進行,並設為鍛燒溫度1600℃、鍛燒時間10小時、升溫速度300℃/h、降溫速度50℃/h。 The molded body after degreasing is calcined to prepare a sintered body. The calcination was carried out in an air atmosphere, and the calcination temperature was 1600 ° C, the calcination time was 10 hours, the temperature increase rate was 300 ° C / h, and the temperature drop rate was 50 ° C / h.

將所得之燒結體進行切削加工,而製造出外徑155mm、內徑135mm、長度1000mm的ITO圓筒形濺鍍靶材。 The obtained sintered body was subjected to a cutting process to produce an ITO cylindrical sputtering target having an outer diameter of 155 mm, an inner diameter of 135 mm, and a length of 1000 mm.

藉由In銲料將3個前述靶材接合於外徑133mm、內徑123mm、長度3200mm之SUS304製的支承管,而製作出ITO靶。各靶材間的間隔(分割部的長度)設為0.2mm。 Three of the above-mentioned targets were bonded to a support tube made of SUS304 having an outer diameter of 133 mm, an inner diameter of 123 mm, and a length of 3,200 mm by In solder to prepare an ITO target. The interval between the targets (the length of the divided portion) was set to 0.2 mm.

靶材的相對密度,以及靶材及成形體之破裂的評估內容記載於第1表。 The evaluation of the relative density of the target and the cracking of the target and the molded body is described in Table 1.

[實施例2至20、比較例1至9] [Examples 2 to 20, Comparative Examples 1 to 9]

藉由下列條件來進行實施例2至20、比較例1至9。 Examples 2 to 20 and Comparative Examples 1 to 9 were carried out under the following conditions.

將陶瓷原料粉末中之SnO2粉末的含量、聚乙烯醇的聚合度及皂化度、以及聚乙烯醇的添加量及多元羧酸銨的添加量設為如第1表所示之條件,除此之外,其他與實施例1同樣地進行而調製出顆粒。 The content of the SnO 2 powder in the ceramic raw material powder, the degree of polymerization and the degree of saponification of the polyvinyl alcohol, the amount of the polyvinyl alcohol added, and the amount of the polyvalent ammonium carboxylate added are set as shown in Table 1, except The pellets were prepared in the same manner as in Example 1 except that the pellets were prepared.

將該顆粒進行CIP成形,而製作出具有如第1表所示的長度之圓筒形的成形體。CIP成形中,關於實施例2、3、9至18、比較例6,係使用與實施例1相同之胺酯橡膠模具,關於其他實施例及比較例,則使用具有與實施例1所使用之胺酯橡膠模具相同之心型及內徑,且具有可得到如第1表所示之長度的成形體之長度之胺酯橡膠模具。將CIP成形後之200kgf/cm2以下的壓力範圍中之減壓速度,設為如第1表所示之條件。除此之外的其他CIP成形條件設為與實施例1相同。比較例5中,成形體在成形步驟中產生破裂。 The pellet was subjected to CIP molding to prepare a cylindrical molded body having a length as shown in Table 1. In the CIP molding, the amine ester rubber molds of the same manner as in the first embodiment were used in the examples 2, 3, 9 to 18, and the comparative example 6, and the other examples and comparative examples were used in the same manner as in the first embodiment. The urethane rubber mold has the same core shape and inner diameter, and has an amine ester rubber mold having a length of a molded body having a length as shown in Table 1. The pressure reduction rate in the pressure range of 200 kgf/cm 2 or less after the CIP molding was set as the condition shown in the first table. Other CIP forming conditions other than this were set to be the same as in the first embodiment. In Comparative Example 5, the formed body was cracked in the forming step.

將成形步驟中未產生破裂之成形體進行加熱脫脂。將400℃為止的溫度範圍中之升溫溫度設為如第1表所示之條件,除此之外的其他脫脂條件設為與實施例1相同。比較例1至4及8至9中,成形體在脫脂步驟中產生破裂。 The formed body which did not cause cracking in the forming step was subjected to heat degreasing. The temperature rise temperature in the temperature range of 400 ° C was set to the conditions shown in Table 1, and the other degreasing conditions were the same as in Example 1. In Comparative Examples 1 to 4 and 8 to 9, the formed body was cracked in the degreasing step.

將脫脂步驟中未產生破裂之成形體,以與實施例1相同之條件進行鍛燒而製作出燒結體。將所得之燒結體進行切削加工,而製造出具有如第1表所示之外徑、內徑及長度之ITO圓筒形濺鍍靶材。 The molded body which did not cause cracking in the degreasing step was calcined under the same conditions as in Example 1 to prepare a sintered body. The obtained sintered body was subjected to a cutting process to produce an ITO cylindrical sputtering target having an outer diameter, an inner diameter, and a length as shown in Table 1.

以得到如第1表所示之分割部的數目之方式,藉由 In銲料將複數個(比分割部的數目多1之數目的個數)前述靶材接合於外徑133mm、內徑123mm、長度3200mm之SUS304製的支承管,而製作出ITO靶。各靶材間的間隔(分割部的長度)設為0.2mm。 By obtaining the number of divisions as shown in Table 1, by The In solder was bonded to a support tube made of SUS304 having an outer diameter of 133 mm, an inner diameter of 123 mm, and a length of 3,200 mm by a plurality of (the number of the number of divisions). The target was bonded to an ITO target. The interval between the targets (the length of the divided portion) was set to 0.2 mm.

所得之各靶材的相對密度,以及靶材及成形體之破裂的評估內容記載於第1表。 The evaluation of the relative density of each of the obtained targets and the cracking of the target and the molded body is described in Table 1.

<AZO靶> <AZO target> [實施例21] [Example 21]

以使Al2O3粉末的含量成為0.5質量%之方式,調配由BET法所測定之比表面積為5m2/g之Al2O3粉末及由BET法所測定之比表面積為10m2/g之ZnO粉末,於熔罐中藉由氧化鋯球進行球磨混合,而調製出陶瓷原料粉末。 So the content of Al 2 O 3 powder is 0.5% by mass of the embodiment, the formulation the specific surface area determined the by the BET method of 5m 2 / g of Al 2 O 3 powder, and measured the specific surface area by the BET method is 10m 2 / g The ZnO powder was ball-milled by a zirconia ball in a crucible to prepare a ceramic raw material powder.

除了使用該陶瓷原料粉末之外,其他與實施例1同樣地進行而調製出顆粒。 Granules were prepared in the same manner as in Example 1 except that the ceramic raw material powder was used.

使用具有可將上下方密閉之蓋,且具有外徑為167mm之圓柱狀的心型(芯棒)之內徑213mm(厚度10mm)、長度1233mm之圓筒形狀的胺酯橡膠模具,以與實施例1相同之條件來進行CIP成形,而製作出具有如第2表所示的長度之圓筒形的成形體。 A cylindrical ester-shaped urethane rubber mold having an inner diameter of 213 mm (thickness: 10 mm) and a length of 1233 mm having a cylindrical shape (core rod) having a cylindrical outer diameter of 167 mm and having a lid which can be closed at the upper and lower sides is used. The CIP molding was carried out under the same conditions as in Example 1, and a cylindrical molded body having the length shown in Table 2 was produced.

以與實施例1相同之條件將該成形體進行脫脂。 This molded body was degreased under the same conditions as in Example 1.

以與實施例1相同之條件,將脫脂後之成形體進行鍛燒而製作出燒結體。將所得之燒結體進行切削加工,而製造出具有如第2表所示之外徑、內徑及長度之AZO圓筒形濺鍍靶材。 The degreased molded body was calcined under the same conditions as in Example 1 to prepare a sintered body. The obtained sintered body was subjected to a cutting process to produce an AZO cylindrical sputtering target having an outer diameter, an inner diameter, and a length as shown in the second table.

藉由In銲料將3個前述靶材接合於外徑133mm、內徑123mm、長度3200mm之SUS304製的支承管,而製作出AZO 靶。各靶材間的間隔(分割部的長度)設為0.2mm。 Three kinds of the above-mentioned targets were bonded to a support tube made of SUS304 having an outer diameter of 133 mm, an inner diameter of 123 mm, and a length of 3,200 mm by In solder to produce AZO. target. The interval between the targets (the length of the divided portion) was set to 0.2 mm.

將靶材的相對密度,以及靶材及成形體之破裂的評估內容記載於第2表。 The evaluation of the relative density of the target and the cracking of the target and the molded body is shown in Table 2.

[實施例22至33、比較例10至18] [Examples 22 to 33, Comparative Examples 10 to 18]

藉由下列條件來進行實施例22至33及比較例10至18。 Examples 22 to 33 and Comparative Examples 10 to 18 were carried out under the following conditions.

將陶瓷原料粉末中之Al2O3粉末的含量、聚乙烯醇的聚合度及皂化度、以及聚乙烯醇的添加量及多元羧酸銨的添加量設為如第2表所示之條件,除此之外,其他與實施例21同樣地進行而調製出顆粒。 The content of the Al 2 O 3 powder in the ceramic raw material powder, the degree of polymerization and the degree of saponification of the polyvinyl alcohol, the amount of the polyvinyl alcohol added, and the amount of the polyvalent ammonium carboxylate added are set as shown in the second table. Otherwise, the same procedure as in Example 21 was carried out to prepare pellets.

將該顆粒進行CIP成形,而製作出具有如第2表所示的長度之圓筒形的成形體。CIP成形中,關於實施例22、28至30、33、比較例14,係使用與實施例21相同之胺酯橡膠模具,關於其他實施例及比較例,則使用具有與實施例21所使用之胺酯橡膠模具相同之心型及內徑,且具有可得到如第2表所示之長度的成形體之長度之胺酯橡膠模具。將CIP成形後之200kgf/cm2以下的壓力範圍中之減壓速度設為如第2表所示之條件。除此之外的其他CIP成形條件與實施例21設為相同。比較例13中,成形體在成形步驟中產生破裂。 The pellet was subjected to CIP molding to prepare a cylindrical molded body having a length as shown in Table 2. In the CIP molding, the same examples as in Example 22, 28 to 30, 33, and Comparative Example 14 were used, and the other examples and comparative examples were used. The urethane rubber mold has the same core shape and inner diameter, and has an amine ester rubber mold having a length of a molded body having a length as shown in Table 2. The pressure reduction rate in the pressure range of 200 kgf/cm 2 or less after the CIP molding was set as the condition shown in the second table. Other CIP molding conditions other than this were the same as in Example 21. In Comparative Example 13, the molded body was cracked in the forming step.

將成形步驟中未產生破裂之成形體進行加熱脫脂。將400℃為止的溫度範圍中之升溫溫度設為如第2表所示之條件,除此之外的其他脫脂條件與實施例21相同。比較例10至12及16至18中,成形體在脫脂步驟中產生破裂。 The formed body which did not cause cracking in the forming step was subjected to heat degreasing. The temperature rise temperature in the temperature range of 400 ° C was set to the conditions shown in Table 2, and other degreasing conditions were the same as in Example 21. In Comparative Examples 10 to 12 and 16 to 18, the formed body was cracked in the degreasing step.

將脫脂步驟中未產生破裂之脫脂後的成形體,以與 實施例21相同之條件進行鍛燒而製作出燒結體。將所得之鍛燒體進行切削加工,而製造出具有如第2表所示之外徑、內徑及長度之AZO圓筒形濺鍍靶材。 a degreased molded body which does not cause cracking in the degreasing step, The sintered body was produced by calcination under the same conditions as in Example 21. The obtained calcined body was subjected to a cutting process to produce an AZO cylindrical sputtering target having an outer diameter, an inner diameter, and a length as shown in the second table.

以得到如第2表所示之分割部的數目之方式,藉由In銲料將複數個(比分割部的數目多1之數目的個數)前述靶材接合於外徑133mm、內徑123mm、長度3200mm之SUS304製的支承管,而製作出AZO靶。各靶材間的間隔(分割部的長度)設為0.2mm。 In order to obtain the number of divided portions as shown in the second table, a plurality of (the number of the number more than one of the number of divided portions) of the In solder is bonded to the outer diameter of 133 mm and an inner diameter of 123 mm. A support tube made of SUS304 having a length of 3,200 mm was used to produce an AZO target. The interval between the targets (the length of the divided portion) was set to 0.2 mm.

將所得之各靶材的相對密度,以及靶材及成形體之破裂的評估內容記載於第2表。 The evaluation of the relative density of each of the obtained targets and the cracking of the target and the molded body is shown in the second table.

<IGZO靶> <IGZO target> [實施例34] [Example 34]

以使In2O3粉末的含量成為44.2質量%、Ga2O3粉末的含量成為29.9質量%、ZnO粉末的含量成為25.9質量%之方式,調配由BET法所測定之比表面積為10m2/g之In2O3粉末、由BET法所測定之比表面積為10m2/g之Ga2O3粉末、及由BET法所測定之比表面積為10m2/g之ZnO粉末,於熔罐中藉由氧化鋯球進行球磨混合,而調製出陶瓷原料粉末。 The specific surface area measured by the BET method was adjusted to 10 m 2 / so that the content of the In 2 O 3 powder was 44.2% by mass, the content of the Ga 2 O 3 powder was 29.9% by mass, and the content of the ZnO powder was 25.9% by mass. g of in 2 O 3 powder, a specific surface area measurement of a BET method of 2 g of Ga 2 O 3 powder was 10m /, and as determined by the BET method, the specific surface area of 10m 2 / g of ZnO powder, in the melt tank The ceramic raw material powder was prepared by ball milling mixing with zirconia balls.

除了使用該陶瓷原料粉末,以及使用聚乙烯醇(聚合度:500、皂化度90mol%)來取代聚乙烯醇(聚合度:280、皂化度68mol%)之外,其他與實施例1同樣地進行而調製出顆粒。 The same procedure as in Example 1 was carried out, except that the ceramic raw material powder was used, and polyvinyl alcohol (degree of polymerization: 500, degree of saponification: 90 mol%) was used instead of polyvinyl alcohol (degree of polymerization: 280, degree of saponification: 68 mol%). The particles are prepared.

使用具有可將上下方密閉之蓋,且具有外徑為171mm之圓柱狀的心型(芯棒)之內徑218mm(厚度10mm)、長度653mm之圓筒形狀的胺酯橡膠模具,並將CIP成形後之在200kgf/cm2以下的壓力範圍中之減壓速度設為300kgf/cm2.h,除此之外,其他以 與實施例1相同之條件,將該顆粒進行CIP成形,而製作出具有如第3表所示的長度之圓筒形的成形體。 A urethane rubber mold having a cylindrical shape of a core shape (core rod) having an outer diameter of 171 mm and having a cylindrical shape of 171 mm (thickness: 10 mm) and a length of 653 mm was used, and CIP was used. The pressure reduction rate in the pressure range of 200 kgf/cm 2 or less after molding was set to 300 kgf/cm 2 . h, except that the pellets were subjected to CIP molding under the same conditions as in Example 1, and a cylindrical molded body having a length as shown in Table 3 was produced.

以與實施例1相同之條件,將該成形體進行脫脂。 This molded body was degreased under the same conditions as in Example 1.

以與實施例1相同之條件,將脫脂後之成形體進行鍛燒而製作出燒結體。將所得之燒結體進行切削加工,而製造出具有如第3表所示之外徑、內徑及長度之IGZO圓筒形濺鍍靶材。 The degreased molded body was calcined under the same conditions as in Example 1 to prepare a sintered body. The obtained sintered body was subjected to a cutting process to produce an IGZO cylindrical sputtering target having an outer diameter, an inner diameter, and a length as shown in Table 3.

藉由In銲料將6個前述靶材接合於外徑133mm、內徑123mm、長度3200mm之SUS304製的支承管,而製作出IGZO靶。各靶材間的間隔(分割部的長度)設為0.2mm。 The IGZO target was produced by bonding six of the above-mentioned targets to a support tube made of SUS304 having an outer diameter of 133 mm, an inner diameter of 123 mm, and a length of 3,200 mm by In solder. The interval between the targets (the length of the divided portion) was set to 0.2 mm.

將靶材的相對密度,以及靶材及成形體之破裂的評估內容記載於第3表。 The evaluation of the relative density of the target and the cracking of the target and the molded body is shown in Table 3.

[實施例35至44、比較例19至25] [Examples 35 to 44, Comparative Examples 19 to 25]

藉由下列條件來進行實施例35至44及比較例19至25。 Examples 35 to 44 and Comparative Examples 19 to 25 were carried out under the following conditions.

將陶瓷原料粉末中之In2O3粉末的含量、Ga2O3粉末的含量及ZnO粉末的含量、聚乙烯醇的聚合度及皂化度、以及聚乙烯醇的添加量及多元羧酸銨的添加量設為如第3表所示之條件,除此之外,其他與實施例34同樣地進行而調製出顆粒。 The content of the In 2 O 3 powder in the ceramic raw material powder, the content of the Ga 2 O 3 powder, the content of the ZnO powder, the degree of polymerization and the degree of saponification of the polyvinyl alcohol, the addition amount of the polyvinyl alcohol, and the ammonium polycarboxylate. The pellets were prepared in the same manner as in Example 34 except that the amount of addition was set to the conditions shown in Table 3.

將該顆粒進行CIP成形,而製作出具有如第3表所示的長度之圓筒形的成形體。CIP成形中,關於實施例35至36、比較例19至20、22至25,係使用與實施例34相同之胺酯橡膠模具,關於其他實施例及比較例,則使用具有與實施例34所使用之胺酯橡膠模具相同之心型及內徑,且具有可得到如第2表所示之長度的成形體之長度之胺酯橡膠模具。將CIP成形後之200kgf/cm2 以下的壓力範圍中之減壓速度,設為第3表所示之條件。除此之外的其他CIP成形條件設為與實施例34相同。比較例20中,成形體在成形步驟中產生破裂。 The pellet was subjected to CIP molding to prepare a cylindrical molded body having a length as shown in Table 3. In the CIP molding, with respect to Examples 35 to 36, Comparative Examples 19 to 20, and 22 to 25, the same amine ester rubber mold as in Example 34 was used, and with respect to the other examples and comparative examples, the use of Example 34 was carried out. The amine ester rubber mold used has the same core shape and inner diameter, and has an amine ester rubber mold having a length of a molded body having a length as shown in Table 2. The pressure reduction rate in the pressure range of 200 kgf/cm 2 or less after the CIP molding was set as the condition shown in the third table. Other CIP forming conditions other than this were set to be the same as in Example 34. In Comparative Example 20, the formed body was cracked in the forming step.

將成形步驟中未產生破裂之成形體進行加熱脫脂。將400℃為止的溫度範圍中之升溫溫度設為如第3表所示之條件,除此之外的其他脫脂條件設為與實施例34相同。比較例19及23至25中,成形體在脫脂步驟中產生破裂。 The formed body which did not cause cracking in the forming step was subjected to heat degreasing. The temperature rise temperature in the temperature range of 400 ° C was set to the conditions shown in Table 3, and other degreasing conditions were the same as in Example 34. In Comparative Examples 19 and 23 to 25, the formed body was cracked in the degreasing step.

將脫脂步驟中未產生破裂之成形體,以與實施例34相同之條件進行鍛燒而製作出燒結體。將所得之燒結體進行切削加工,而製造出具有如第3表所示之外徑、內徑及長度之IGZO圓筒形濺鍍靶材。 The molded body which did not cause cracking in the degreasing step was calcined under the same conditions as in Example 34 to prepare a sintered body. The obtained sintered body was subjected to a cutting process to produce an IGZO cylindrical sputtering target having an outer diameter, an inner diameter, and a length as shown in Table 3.

以得到如第3表所示之分割部的數目之方式,藉由In銲料將複數個(比分割部的數目多1之數目的個數)前述靶材接合於外徑133mm、內徑123mm、長度3000mm之SUS304製的支承管,而製作出IGZO靶。各靶材間的間隔(分割部的長度)設為0.2mm。 In order to obtain the number of divided portions as shown in the third table, the plurality of (the number of the number more than one of the number of divided portions) of the In solder is bonded to the outer diameter of 133 mm and the inner diameter of 123 mm. An IGZO target was produced by a support tube made of SUS304 having a length of 3000 mm. The interval between the targets (the length of the divided portion) was set to 0.2 mm.

將所得之各靶材的相對密度,以及靶材及成形體之破裂的評估內容記載於第3表。 The evaluation of the relative density of each of the obtained targets and the cracking of the target and the molded body is shown in Table 3.

如第1表至第3表所示,於實施本發明的製造方法之實施例1至44中,在靶的製作過程中不會產生靶材及成形體的破裂,而能夠得到具有500mm以上的長度且具有95%以上的相對密度之ITO圓筒形濺鍍靶材、AZO圓筒形濺鍍靶材或IGZO圓筒形濺鍍靶材,以及由此等所形成之靶。 As shown in the first to third tables, in Examples 1 to 44 in which the production method of the present invention is carried out, cracking of the target material and the molded body is not caused during the production of the target, and it is possible to obtain a shape of 500 mm or more. An ITO cylindrical sputter target having a relative density of 95% or more, an AZO cylindrical sputter target, or an IGZO cylindrical sputter target, and thus a target formed.

於實施非本發明的製造方法之比較例中,當有機添加物的量相對於陶瓷原料粉末的量多於1.2質量%時,在脫脂步驟中成形體會產生破裂,或是靶材的相對密度低於95%,當有機添加物的量相對於陶瓷原料粉末的量少於0.1質量%時,在成形步驟中成形體會產生破裂。比較例中,無法製造出具有500mm以上的長度且具有95%以上的相對密度之陶瓷圓筒形濺鍍靶材。 In the comparative example in which the manufacturing method according to the present invention is carried out, when the amount of the organic additive is more than 1.2% by mass relative to the amount of the ceramic raw material powder, the formed body may be cracked in the degreasing step, or the relative density of the target may be low. At 95%, when the amount of the organic additive is less than 0.1% by mass relative to the amount of the ceramic raw material powder, the formed body may be broken during the forming step. In the comparative example, a ceramic cylindrical sputtering target having a length of 500 mm or more and a relative density of 95% or more could not be produced.

Claims (10)

一種陶瓷圓筒形濺鍍靶材,其特徵為:長度為500mm以上且相對密度為95%以上,並且為一體化靶材。 A ceramic cylindrical sputtering target characterized by a length of 500 mm or more and a relative density of 95% or more, and is an integrated target. 如申請專利範圍第1項所述之陶瓷圓筒形濺鍍靶材,其中長度為750mm以上。 The ceramic cylindrical sputtering target according to claim 1, wherein the length is 750 mm or more. 如申請專利範圍第1項所述之陶瓷圓筒形濺鍍靶材,其中長度為1000mm以上。 The ceramic cylindrical sputtering target according to claim 1, wherein the length is 1000 mm or more. 如申請專利範圍第1項所述之陶瓷圓筒形濺鍍靶材,其中長度為1500mm以上。 The ceramic cylindrical sputtering target according to claim 1, wherein the length is 1500 mm or more. 如申請專利範圍第1項至第4項中任一項所述之陶瓷圓筒形濺鍍靶材,其中係Sn的含量以SnO2量換算為1至10質量%之ITO製者。 The ceramic cylindrical sputtering target according to any one of claims 1 to 4, wherein the content of Sn is ITO of 1 to 10% by mass in terms of the amount of SnO 2 . 如申請專利範圍第1項至第4項中任一項所述之陶瓷圓筒形濺鍍靶材,其中係Al的含量以Al2O3量換算為0.1至5質量%之AZO製者。 The ceramic cylindrical sputtering target according to any one of claims 1 to 4, wherein the content of Al is 0.1 to 5% by mass of AZO in terms of the amount of Al 2 O 3 . 如申請專利範圍第1項至第4項中任一項所述之陶瓷圓筒形濺鍍靶材,其中係In的含量以In2O3量換算為40至60質量%、Ga的含量以Ga2O3量換算為20至40質量%、Zn的含量以ZnO量換算為10至30質量%之IGZO製者。 The ceramic cylindrical sputtering target according to any one of claims 1 to 4, wherein the content of the In is 40 to 60% by mass in terms of the amount of In 2 O 3 , and the content of Ga is The amount of Ga 2 O 3 is 20 to 40% by mass, and the Zn content is 10 to 30% by mass in terms of the amount of ZnO. 一種陶瓷圓筒形濺鍍靶,其特徵為:藉由接合材料,將如申請專利範圍第1項至第7項中任一項所述之陶瓷圓筒形濺鍍靶材接合於支承管而成。 A ceramic cylindrical sputtering target characterized by bonding a ceramic cylindrical sputtering target according to any one of claims 1 to 7 to a support tube by a bonding material. to make. 一種陶瓷圓筒形濺鍍靶材的製造方法,其係包含: 從含有陶瓷原料粉末及有機添加物之漿液調製出顆粒之步驟1;使前述顆粒進行CIP成形而製作圓筒形的成形體之步驟2;使前述成形體脫脂之步驟3;以及鍛燒前述脫脂後之成形體之步驟4;其中前述步驟1中,前述有機添加物的量相對於前述陶瓷原料粉末的量為0.1至1.2質量%。 A method for manufacturing a ceramic cylindrical sputtering target, comprising: a step 1 of preparing a granule from a slurry containing a ceramic raw material powder and an organic additive; a step 2 of subjecting the granule to CIP molding to form a cylindrical shaped body; a step 3 of degreasing the shaped body; and squeezing the defatted In the step (1), the amount of the organic additive is 0.1 to 1.2% by mass based on the amount of the ceramic raw material powder. 如申請專利範圍第9項所述之陶瓷圓筒形濺鍍靶材的製造方法,其中前述有機添加物含有黏合劑,該黏合劑為聚合度200至400且皂化度60至80mol%之聚乙烯醇。 The method for producing a ceramic cylindrical sputtering target according to claim 9, wherein the organic additive contains a binder, and the binder is a polyethylene having a degree of polymerization of 200 to 400 and a degree of saponification of 60 to 80 mol%. alcohol.
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