TWI573890B - Method for making a target material for sputtering target and claw member - Google Patents
Method for making a target material for sputtering target and claw member Download PDFInfo
- Publication number
- TWI573890B TWI573890B TW104121277A TW104121277A TWI573890B TW I573890 B TWI573890 B TW I573890B TW 104121277 A TW104121277 A TW 104121277A TW 104121277 A TW104121277 A TW 104121277A TW I573890 B TWI573890 B TW I573890B
- Authority
- TW
- Taiwan
- Prior art keywords
- cylindrical ceramic
- target
- cylindrical
- support
- claws
- Prior art date
Links
- 210000000078 claw Anatomy 0.000 title claims description 76
- 238000005477 sputtering target Methods 0.000 title claims description 22
- 238000000034 method Methods 0.000 title description 16
- 239000013077 target material Substances 0.000 title 1
- 239000000919 ceramic Substances 0.000 claims description 100
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 19
- 229920001875 Ebonite Polymers 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 12
- 238000005452 bending Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 19
- 239000000843 powder Substances 0.000 description 14
- 239000011162 core material Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- 239000008187 granular material Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 229910052902 vermiculite Inorganic materials 0.000 description 7
- 235000019354 vermiculite Nutrition 0.000 description 7
- 239000010455 vermiculite Substances 0.000 description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 6
- 229920001971 elastomer Polymers 0.000 description 6
- 239000010935 stainless steel Substances 0.000 description 6
- 229910001220 stainless steel Inorganic materials 0.000 description 6
- 238000000498 ball milling Methods 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229920006311 Urethane elastomer Polymers 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920005646 polycarboxylate Polymers 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006259 organic additive Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007780 powder milling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/18—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centreless means for supporting, guiding, floating or rotating work
- B24B5/22—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centreless means for supporting, guiding, floating or rotating work for grinding cylindrical surfaces, e.g. on bolts
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/008—Bodies obtained by assembling separate elements having such a configuration that the final product is porous or by spirally winding one or more corrugated sheets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
揭示之實施形態係關於濺鍍靶用靶材之製造方法及爪構件。 The disclosed embodiment relates to a method of producing a target for sputtering targets and a claw member.
已知一種磁控型旋轉陰極濺鍍裝置，其係於圓筒形靶材之內側具有磁場產生裝置，使該靶材從內側冷卻並且進一步使該靶材旋轉同時進行濺鍍。在此種濺鍍裝置中，靶材之外周表面的全面會沖蝕而均勻地被削去。因此，於以往的平板型磁控濺鍍裝置中係使用效率為20至30%，相對於此，磁控型旋轉陰極濺鍍裝置中可得到70%以上之非常高的使用效率。 A magnetron type rotary cathode sputtering apparatus is known which has a magnetic field generating means inside a cylindrical target, which cools the target from the inside and further rotates the target while performing sputtering. In such a sputtering apparatus, the entire peripheral surface of the target is uniformly washed away and uniformly removed. Therefore, in the conventional flat magnetron sputtering apparatus, the use efficiency is 20 to 30%, whereas in the magnetron type rotary cathode sputtering apparatus, a very high use efficiency of 70% or more can be obtained.
又，在磁控型旋轉陰極濺鍍裝置中，藉由使圓筒形之靶材旋轉同時進行濺鍍，比起平板型磁控濺鍍裝置，每單位面積可投入較大之功率，故可得到高的成膜速度。 Further, in the magnetron type rotary cathode sputtering apparatus, by rotating the cylindrical target while performing sputtering, a larger power can be input per unit area than the flat type magnetron sputtering apparatus. A high film formation speed is obtained.
此種旋轉陰極濺鍍方式係以容易加工成圓筒形狀且機械強度高之金屬製靶材廣泛普及。相對於此，陶瓷製之靶材係與金屬製靶材相比，具有機械強度低且碎 之特性，且圓筒形狀加工不容易。 Such a rotating cathode sputtering method is widely used as a metal target which is easily processed into a cylindrical shape and has high mechanical strength. In contrast, ceramic targets have low mechanical strength and are broken compared to metal targets. The characteristics, and the cylindrical shape processing is not easy.
近年來，平板顯示器、太陽電池所使用之玻璃基板被大型化，為了在該大型化之基板上有效率地形成薄膜，必須有例如超過3m之長條之圓筒形靶。伴隨此情形，要求亦更增加構成圓筒形靶之圓筒形靶材的長度。 In recent years, glass substrates used for flat panel displays and solar cells have been increased in size, and in order to efficiently form a thin film on the enlarged substrate, for example, a cylindrical target having a length of more than 3 m is required. Along with this, it is required to further increase the length of the cylindrical target constituting the cylindrical target.
已知在加工筒狀陶瓷而製作圓筒形靶材時，將該筒狀陶瓷之一端固定，以圓筒軸為中心線而使筒狀陶瓷旋轉同時進行研磨而調整靶材之內徑及外徑之尺寸之方法(例如，參照專利文獻1)。 It is known that when a cylindrical target is produced by processing a cylindrical ceramic, one end of the cylindrical ceramic is fixed, and the cylindrical ceramic is rotated as a center line, and the cylindrical ceramic is rotated while being ground to adjust the inner diameter and the outer diameter of the target. The method of the size of the diameter (for example, refer to Patent Document 1).
[專利文獻1]日本特開2011-177889號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2011-177889
然而，上述之先前技術係在加工長度為500mm以上之筒狀陶瓷時，依然有產生破裂、變形之疑慮，故仍有進一步改善的空間。 However, the above-mentioned prior art has a problem of cracking and deformation when processing a cylindrical ceramic having a length of 500 mm or more, and there is still room for further improvement.
實施形態之一態樣係有鑒於上述情形而完成者，係提供一種即使加工之筒狀陶瓷之全長為500mm以上，亦可抑制破裂、變形之產生之濺鍍靶用靶材之製造方法及爪構件。 In the case of the above-described situation, the method of manufacturing a target for a sputtering target which can suppress the occurrence of cracks and deformations even when the total length of the processed cylindrical ceramic is 500 mm or more is provided. member.
實施形態之濺鍍靶用靶材之製造方法，係 包括：將3個以上之支撐爪插入於全長為500mm以上之筒狀陶瓷之中空部直到前述筒狀陶瓷之全長之10%以上之長度為止之步驟；使3個以上前述之支撐爪分別抵接於前述筒狀陶瓷之內周面，而支撐前述筒狀陶瓷之步驟；以及使被3個以上之前述支撐爪支撐之前述筒狀陶瓷於前述筒狀陶瓷之圓周方向旋轉並加工前述筒狀陶瓷之外周面之步驟。3個以上.之支撐爪係經硬質橡膠塗覆。 A method for producing a target for a sputtering target according to an embodiment The method includes: inserting three or more support claws into a hollow portion of a cylindrical ceramic having a total length of 500 mm or more until a length of 10% or more of the entire length of the cylindrical ceramic; and causing three or more support claws to abut each other a step of supporting the cylindrical ceramic on the inner circumferential surface of the cylindrical ceramic; and rotating the cylindrical ceramic supported by the three or more support claws in a circumferential direction of the cylindrical ceramic to process the cylindrical ceramic Steps outside the perimeter. More than three support claws are coated with hard rubber.
若依據實施形態之一態樣，可提供一種即使進行加工之筒狀陶瓷之全長為500mm以上，亦可抑制破裂、變形之產生之濺鍍靶用靶材之製造方法及爪構件。 According to one aspect of the embodiment, it is possible to provide a sputtering target target manufacturing method and a claw member which can suppress the occurrence of cracks and deformations even when the total length of the cylindrical ceramic to be processed is 500 mm or more.
1‧‧‧筒狀陶瓷(燒結體) 1‧‧‧Cylinder ceramics (sintered body)
2‧‧‧支撐體 2‧‧‧Support
2a‧‧‧爪構件 2a‧‧‧Claw components
2a1、2a2、2a3‧‧‧支撐爪 2a1, 2a2, 2a3‧‧‧ support claws
3‧‧‧砥石 3‧‧‧砥石
4‧‧‧防止振動治具 4‧‧‧Anti-vibration fixture
5‧‧‧內周面 5‧‧‧ inner circumference
6‧‧‧外周面 6‧‧‧ outer perimeter
7‧‧‧中空部 7‧‧‧ Hollow
第1圖係表示實施形態之濺鍍靶用靶材之製造方法之概要之說明圖。 Fig. 1 is an explanatory view showing an outline of a method of producing a target for a sputtering target according to an embodiment.
第2圖係第1圖之A-A’剖面圖。 Fig. 2 is a cross-sectional view taken along line A-A' of Fig. 1.
第3圖係表示實施形態之濺鍍靶用靶材之製造方法之一例之流程圖。 Fig. 3 is a flow chart showing an example of a method of producing a target for sputtering targets according to an embodiment.
以下，參照所附圖式，詳細說明本案揭示之濺鍍靶用靶材之製造方法及爪構件之實施形態。再者，本發明不受限於以下所示之實施形態。 Hereinafter, an embodiment of a method for producing a target for a sputtering target and a claw member disclosed in the present invention will be described in detail with reference to the accompanying drawings. Furthermore, the present invention is not limited to the embodiments shown below.
首先，使用第1圖、第2圖來說明實施形態之濺鍍靶用靶材之製造方法之概要。第1圖係表示實施形 態之濺鍍靶用靶材之製造方法之概要之說明圖，第2圖係第1圖之A-A’剖面圖。 First, an outline of a method of manufacturing a target for a sputtering target according to an embodiment will be described using FIG. 1 and FIG. Figure 1 shows the implementation form BRIEF DESCRIPTION OF THE DRAWINGS FIG. 2 is a cross-sectional view taken along line A-A' of Fig. 1 for an outline of a method for producing a sputtering target target.
如第1圖及第2圖所示，筒狀陶瓷1係成形為具有中空部7之筒狀。再者，第1圖中，為了容易理解，僅將筒狀陶瓷1以剖面圖表示。以下，首先說明濺鍍靶用靶材之製造方法之一例。 As shown in FIGS. 1 and 2, the cylindrical ceramic 1 is formed into a tubular shape having a hollow portion 7. In addition, in the first figure, for the sake of easy understanding, only the cylindrical ceramic 1 is shown in a sectional view. Hereinafter, an example of a method of producing a target for sputtering targets will be described first.
筒狀陶瓷1係經由：將含有陶瓷原料粉末及有機添加物之漿體造粒，以製作顆粒體之造粒步驟；使該顆粒體成形，製作筒狀成形體之成形步驟；以及燒結該成形體以製作燒結體之燒結步驟而製作。再者，燒結體之製作方法係不限於上述者，可為任何之方法。 The cylindrical ceramic 1 is a granulation step of granulating a slurry containing a ceramic raw material powder and an organic additive to prepare a granule, a molding step of molding the granule to prepare a tubular molded body, and sintering to form the granule The body is produced by a sintering step of producing a sintered body. Further, the method for producing the sintered body is not limited to the above, and may be any method.
如此方式所製作之燒結體係藉由實施形態之濺鍍靶用靶材之製造方法而加工。以下，有時將該燒結體附上與筒狀陶瓷1相同之符號而作為燒結體1來說明。再者，筒狀陶瓷1可為例如將燒結成柱狀之燒結體切削加工形成為筒狀者。 The sintered system produced in this manner is processed by the method for producing a target for sputtering targets of the embodiment. Hereinafter, the sintered body may be described as the sintered body 1 by attaching the same reference numerals as those of the cylindrical ceramic 1. In addition, the cylindrical ceramic 1 may be formed, for example, by cutting a sintered body sintered into a column shape into a tubular shape.
又，加工筒狀陶瓷1而製作濺鍍靶用靶材時，就陶瓷原料而言，可例示ITO(In2O3-SnO2)、IGZO(In2O3-Ga2O3-ZnO)及AZO(Al2O3-ZnO)等，但不限於該等。 In addition, when the cylindrical ceramic material 1 is processed to form a target for a sputtering target, ITO (In 2 O 3 -SnO 2 ) and IGZO (In 2 O 3 -Ga 2 O 3 -ZnO) can be exemplified as the ceramic material. And AZO (Al 2 O 3 -ZnO) or the like, but is not limited thereto.
實施形態之濺鍍靶用靶材之製造方法係適用於如此方式所製作之筒狀陶瓷1之全長為500mm以上，較佳係適用於600mm以上之情形。若筒狀陶瓷1之全長未達500mm，則即使不適用本製造方法，也不易產生筒狀陶瓷1之破裂、變形。惟，無礙於對於全長未達500mm之筒 狀陶瓷1之本製造方法的使用。又，上限值無特別限定，但較佳係4000mm以下。 The method for producing a target for sputtering targets according to the embodiment is applied to a cylindrical ceramic 1 produced in such a manner, and has a total length of 500 mm or more, and is preferably applied to 600 mm or more. If the total length of the cylindrical ceramic 1 is less than 500 mm, cracking or deformation of the cylindrical ceramic 1 is less likely to occur even if the manufacturing method is not applied. However, it does not hinder the cylinder that is less than 500mm in length. Use of the present manufacturing method of the ceramic 1 . Further, the upper limit is not particularly limited, but is preferably 4000 mm or less.
又，筒狀陶瓷1之密度係5.0g/cm3以上，較佳係5.0g/cm3以上8.0g/cm3以下。若筒狀陶瓷1之密度未達5.0g/cm3，則例如筒狀陶瓷1本身之質量變小，因此即使不適用本製造方法也不易產生筒狀陶瓷1之破裂、變形。惟，無礙於對於密度未達5.0g/cm3之筒狀陶瓷1之本製造方法的使用。 Further, the density of the cylindrical ceramic 1 is 5.0 g/cm 3 or more, preferably 5.0 g/cm 3 or more and 8.0 g/cm 3 or less. When the density of the cylindrical ceramic 1 is less than 5.0 g/cm 3 , for example, the mass of the cylindrical ceramic 1 itself is small, and therefore the cracking and deformation of the cylindrical ceramic 1 are less likely to occur even if the manufacturing method is not applied. However, it does not hinder the use of the present manufacturing method for the cylindrical ceramic 1 having a density of less than 5.0 g/cm 3 .
在此，筒狀陶瓷1之密度係依據阿基米德法而測定。具體上係將筒狀陶瓷1之空中重量除以體積(=筒狀陶瓷1之水中重量/計測溫度之水比重)者。 Here, the density of the cylindrical ceramic 1 is measured in accordance with the Archimedes method. Specifically, the air weight of the cylindrical ceramic 1 is divided by the volume (= the weight of the water of the cylindrical ceramic 1 / the specific gravity of the water of the measured temperature).
然後，筒狀陶瓷1之抗折強度係250MPa以下，較佳係30MPa以上250MPa以下。若筒狀陶瓷1之抗折強度未達30MPa，則有時強度過低而難以加工。又，若筒狀陶瓷1之抗折強度超過250MPa，則有時即使不適用本製造方法，也不易產生筒狀陶瓷1之破裂、變形。惟，無礙於將本製造方法使用於抗折強度未達30MPa或超過250MPa之筒狀陶瓷1。再者，筒狀陶瓷1之抗折強度係依據JIS R1601：2008所規定之方法而測定之值。 Then, the cylindrical ceramic 1 has a flexural strength of 250 MPa or less, preferably 30 MPa or more and 250 MPa or less. If the bending strength of the cylindrical ceramic 1 is less than 30 MPa, the strength may be too low and processing may be difficult. In addition, when the bending strength of the cylindrical ceramic 1 exceeds 250 MPa, the cylindrical ceramic 1 may not be easily broken or deformed even if the manufacturing method is not applied. However, this manufacturing method is not hindered by the use of the cylindrical ceramic 1 having a bending strength of less than 30 MPa or more than 250 MPa. Further, the flexural strength of the cylindrical ceramic 1 is a value measured in accordance with the method specified in JIS R1601:2008.
接著，說明實施形態之濺鍍靶用靶材之製造方法中所使用之加工治具。筒狀陶瓷1係藉由配置於其一端側之支撐體2所支撐。支撐體2係具備沿著筒狀陶瓷1之圓筒軸之方式所配置之爪構件2a。 Next, a processing jig used in the method for producing a sputtering target target according to the embodiment will be described. The cylindrical ceramic 1 is supported by a support 2 disposed on one end side thereof. The support body 2 is provided with a claw member 2a disposed along the cylindrical axis of the cylindrical ceramic 1.
爪構件2a係具備以相對於筒狀陶瓷1之圓 周方向幾乎成為等間隔之方式配置之支撐爪2a1、2a2、2a3。支撐爪2a1係具有以硬質橡膠2a12塗覆芯材2a11之構成，支撐爪2a2及2a3亦具有與支撐爪2a1同樣的構成。 The claw member 2a is provided with a circle with respect to the cylindrical ceramic 1 The support claws 2a1, 2a2, and 2a3 are arranged almost at equal intervals in the circumferential direction. The support claw 2a1 has a configuration in which the core material 2a11 is coated with the hard rubber 2a12, and the support claws 2a2 and 2a3 also have the same configuration as the support claw 2a1.
此處，就支撐爪2a1之芯材2a11而言，可使用例如鐵、不銹鋼、鈦及鈦合金等金屬材料，但不限於該等。又，就硬質橡膠2a12而言，可使用依據JIS K6253-3：2012所規定之硬度為80以上90以下者，例如氯平橡膠等，但可依芯材2a11之強度而選擇。 Here, as the core material 2a11 of the support claw 2a1, a metal material such as iron, stainless steel, titanium, or titanium alloy can be used, but is not limited thereto. In addition, as for the hard rubber 2a12, a hardness of 80 or more and 90 or less according to JIS K6253-3:2012, for example, a chloro flat rubber or the like can be used, but it can be selected depending on the strength of the core material 2a11.
如此方式所構成之支撐爪2a1、2a2、2a3係分別於筒狀陶瓷1之徑方向可獨立移動地設置。以下，說明藉由支撐體2支撐筒狀陶瓷1之手法。 The support claws 2a1, 2a2, and 2a3 formed in this manner are independently movably provided in the radial direction of the cylindrical ceramic 1. Hereinafter, a method of supporting the cylindrical ceramic 1 by the support 2 will be described.
首先，移動支撐體2並將爪構件2a插入於筒狀陶瓷1之中空部7。當支撐爪2a1、2a2、2a3之間隔過寬而無法插入於中空部7時，可預先使支撐爪2a1、2a2、2a3移動至筒狀陶瓷1之徑方向內側。 First, the support 2 is moved and the claw member 2a is inserted into the hollow portion 7 of the cylindrical ceramic 1. When the interval between the support claws 2a1, 2a2, 2a3 is too wide to be inserted into the hollow portion 7, the support claws 2a1, 2a2, 2a3 can be moved to the inner side in the radial direction of the cylindrical ceramic 1 in advance.
接著，藉由爪構件2a支撐筒狀陶瓷1。具體上，使支撐爪2a1、2a2、2a3移動至筒狀陶瓷1之徑方向外側，使支撐爪2a1、2a2、2a3以預定壓力抵接於筒狀陶瓷1之內周面5。在此，使支撐爪2a1、2a2、2a3抵接之壓力可因應筒狀陶瓷1之強度、硬質橡膠2a12之材質及後述之筒狀陶瓷1之旋轉數等而適宜地變更。 Next, the cylindrical ceramic 1 is supported by the claw member 2a. Specifically, the support claws 2a1, 2a2, 2a3 are moved to the outer side in the radial direction of the cylindrical ceramic 1, and the support claws 2a1, 2a2, 2a3 are brought into contact with the inner peripheral surface 5 of the cylindrical ceramic 1 with a predetermined pressure. Here, the pressure at which the supporting claws 2a1, 2a2, and 2a3 abut against each other can be appropriately changed in accordance with the strength of the cylindrical ceramic 1, the material of the hard rubber 2a12, and the number of rotations of the cylindrical ceramic 1 to be described later.
然後，藉由爪構件2a支撐之筒狀陶瓷1係設置於用以朝圓周方向旋轉之例如圓筒研磨盤等研磨裝置，被砥石3研磨。此時，為了防止振動，可將筒狀陶瓷 1之與被支撐體2支撐之端面為相反側之端面以防止振動治具4固定。再者，防止振動治具4係以例如鐵、不銹鋼、鈦及鈦合金之其他金屬材料等構成。 Then, the cylindrical ceramic 1 supported by the claw member 2a is provided on a polishing apparatus such as a cylindrical grinding disc for rotating in the circumferential direction, and is ground by the vermiculite 3. At this time, in order to prevent vibration, the cylindrical ceramic can be The end surface supported by the support body 2 is an end surface on the opposite side to prevent the vibration jig 4 from being fixed. Further, the vibration preventing fixture 4 is made of, for example, iron, stainless steel, titanium, or other metal material of a titanium alloy.
在此，支撐爪2a1、2a2、2a3係相對於筒狀陶瓷1之全長，以成為10%以上，較佳係成為10%以上50%以下之方式插入於筒狀陶瓷1之中空部7，與內周面5抵接。若相對於筒狀陶瓷1之全長，插入支撐爪2a1、2a2、2a3之長度未達10%，則負荷會集中於被支撐爪2a1、2a2、2a3支撐之部分，成為筒狀陶瓷1之破裂、變形之原因。 Here, the support claws 2a1, 2a2, and 2a3 are inserted into the hollow portion 7 of the cylindrical ceramic 1 so as to be 10% or more, preferably 10% or more and 50% or less, with respect to the entire length of the cylindrical ceramic 1. The inner peripheral surface 5 abuts. When the length of the insertion support claws 2a1, 2a2, 2a3 is less than 10% with respect to the entire length of the cylindrical ceramic 1, the load is concentrated on the portion supported by the support claws 2a1, 2a2, 2a3, and the cylindrical ceramic 1 is broken. The cause of the deformation.
又，筒狀陶瓷1之旋轉速度係可因應筒狀陶瓷1之強度及大小而設定，較佳係例如設為10rpm以上150rpm以下。若筒狀陶瓷1之旋轉速度未達10rpm，則有時藉由砥石3之筒狀陶瓷1之研磨不安定而加工精度降低，或因加工速度延遲而導致製造時間延長。又，若筒狀陶瓷1之旋轉速度超過150rpm，則對筒狀陶瓷1之負荷變大，有時例如於研磨中筒狀陶瓷1破裂。 Further, the rotational speed of the cylindrical ceramic 1 can be set in accordance with the strength and size of the cylindrical ceramic 1, and is preferably, for example, 10 rpm or more and 150 rpm or less. When the rotational speed of the cylindrical ceramic 1 is less than 10 rpm, the polishing accuracy of the cylindrical ceramic 1 of the vermiculite 3 may be lowered, or the processing accuracy may be lowered due to the delay in the processing speed. In addition, when the rotational speed of the cylindrical ceramic 1 exceeds 150 rpm, the load on the cylindrical ceramic 1 becomes large, and the cylindrical ceramic 1 may be broken, for example, during polishing.
再者，第1圖中，對於筒狀陶瓷1之外周面6進行橫向式研磨(traverse grinding)時為了防止支撐部2與砥石3之接觸，而在筒狀陶瓷1與支撐體2之間設置間隙，但依研磨方法亦可使筒狀陶瓷1與支撐體2接觸。 In addition, in the first drawing, when the outer peripheral surface 6 of the cylindrical ceramic 1 is subjected to traverse grinding, in order to prevent the contact between the support portion 2 and the vermiculite 3, the cylindrical ceramic 1 and the support 2 are disposed. The gap, but the cylindrical ceramic 1 can also be in contact with the support 2 by the grinding method.
又，上述實施形態中，係說明爪構件2a以3個支撐爪2a1、2a2、2a3所構成之例，但只要為3個以上，無限制，較佳係4至16，更佳係4至16中之偶數，特別係可以4或8之支撐爪構成。 In the above-described embodiment, the example in which the claw members 2a are constituted by the three supporting claws 2a1, 2a2, and 2a3 will be described. However, the number of the supporting members 2a is not limited, and is preferably 4 to 16, more preferably 4 to 16. The even number in the middle, in particular, can be composed of 4 or 8 support claws.
接著，使用第3圖說明實施形態之濺鍍靶用靶材之製造方法。第3圖係表示實施形態之加工筒狀陶瓷1之處理順序之流程圖。 Next, a method of manufacturing a target for a sputtering target according to an embodiment will be described using FIG. Fig. 3 is a flow chart showing the processing procedure of the processed cylindrical ceramic 1 of the embodiment.
如第3圖所示，首先，將3個以上之支撐爪2a1、2a2、2a3插入於筒狀陶瓷1之中空部7(步驟S11)。接著，使支撐爪2a1、2a2、2a3朝筒狀陶瓷1之徑方向移動而分別抵接於筒狀陶瓷1之內周面5(步驟S12)。 As shown in Fig. 3, first, three or more support claws 2a1, 2a2, and 2a3 are inserted into the hollow portion 7 of the cylindrical ceramic 1 (step S11). Then, the support claws 2a1, 2a2, and 2a3 are moved in the radial direction of the cylindrical ceramic 1 to abut against the inner circumferential surface 5 of the cylindrical ceramic 1 (step S12).
然後，使筒狀陶瓷1於圓周方向旋轉並研磨外周面6(步驟S13)。依以上各步驟，結束適用支撐爪2a1、2a2、2a3之一系列的筒狀陶瓷1之加工。 Then, the cylindrical ceramic 1 is rotated in the circumferential direction and the outer peripheral surface 6 is polished (step S13). According to the above steps, the processing of the cylindrical ceramic 1 of one of the series of supporting claws 2a1, 2a2, 2a3 is completed.
再者，製作圓筒形濺鍍靶用靶材時，在上述步驟S13之後進行進一步的加工。 Further, when a target for a cylindrical sputtering target is produced, further processing is performed after the above step S13.
在此情況下，步驟S13中，係以成為比成品外徑大之外徑之方式加工筒狀陶瓷1之外周面6之後，從筒狀陶瓷1取下支撐體2。接著，以加工後之外周面6為基準，進行內周面5之加工。進一步，再度進行外周面6之加工，研磨至成為目標之尺寸為止。又，筒狀陶瓷1之長度方向係藉由切斷或研磨而加工至成為目標尺寸為止。 In this case, in step S13, the outer peripheral surface 6 of the cylindrical ceramic 1 is processed so as to have an outer diameter larger than the outer diameter of the finished product, and then the support 2 is removed from the cylindrical ceramic 1. Next, the inner peripheral surface 5 is processed on the basis of the outer peripheral surface 6 after the processing. Further, the outer peripheral surface 6 is processed again and polished to the target size. Further, the longitudinal direction of the cylindrical ceramic 1 is processed by cutting or polishing to a target size.
[實施例1] [Example 1]
調配藉由BET(Brunauer-Emmett-Teller)法所測定之比表面積(BET比表面積)為5m2/g之SnO2粉末10質量%、與BET比表面積為5m2/g之In2O3粉末90質量%，於壺(pot)中藉由氧化鋯球進行球磨混合，調製原料粉末。 Formulation specific surface (BET specific surface area) by BET (Brunauer-Emmett-Teller) method of the measured 5m 2 / g of powder SnO 10% by mass, and the BET specific surface area of 5m 2 / g In 2 O 3 powder of 90% by mass, ball-milled by zirconia balls in a pot to prepare a raw material powder.
於該壺中，相對於原料粉末100質量%，分別添加0.3質量%之聚乙烯醇、0.2質量%之聚羧酸銨、0.5質量%之聚乙二醇、50質量%之水，進行球磨混合而調製漿體。接著，將該漿體供給至噴霧乾燥裝置，以霧化器(atomizer)旋轉數14,000rpm、入口溫度200℃、出口溫度80℃之條件進行噴霧乾燥，調製顆粒體。 In the pot, 0.3% by mass of polyvinyl alcohol, 0.2% by mass of ammonium polycarboxylate, 0.5% by mass of polyethylene glycol, and 50% by mass of water were added to 100% by mass of the raw material powder, and ball milling was carried out. And modulate the slurry. Next, the slurry was supplied to a spray drying apparatus, and spray-dried under the conditions of an atomizer rotation of 14,000 rpm, an inlet temperature of 200 ° C, and an outlet temperature of 80 ° C to prepare granules.
將該顆粒體，分接(tapping)於具有外徑150mm之圓柱狀的中子(心棒)之內徑220mm(壁厚10mm)、長度1300mm之圓筒形狀之胺甲酸酯橡膠型，同時填充，密封橡膠型後，以800kgf/cm2之壓力進行CIP(Cold Isostatic Pressing)成形，製作略圓筒形之成形體。 The granules were tapped on a cylindrical urethane rubber type having an inner diameter of 220 mm (wall thickness: 10 mm) and a length of 1300 mm having a cylindrical neutron (heart rod) having an outer diameter of 150 mm, and simultaneously filled. After sealing the rubber type, CIP (Cold Isostatic Pressing) molding was carried out at a pressure of 800 kgf/cm 2 to prepare a substantially cylindrical molded body.
將該成形體於600℃加熱10小時而除去有機成分。於常溫至400℃之溫度範圍，昇溫速度設為20℃/h，於400℃至600℃係昇溫速度設為50℃/h。再者，將經加熱之成形體燒結，製作燒結體1。燒結係在氧氣環境中，以將自常溫之昇溫速度設為300℃/h，加熱至燒結溫度1550℃，保持12小時之條件來進行。降溫速度係將1550℃至800℃之設為50℃/h，800℃以下設為30℃/h。 The molded body was heated at 600 ° C for 10 hours to remove organic components. The temperature rise rate was set to 20 ° C / h in the temperature range from room temperature to 400 ° C, and the temperature increase rate was set to 50 ° C / h at 400 ° C to 600 ° C. Further, the heated compact is sintered to produce a sintered body 1. The sintering was carried out in an oxygen atmosphere by setting the temperature rise rate from normal temperature to 300 ° C / h, heating to a sintering temperature of 1550 ° C, and maintaining the conditions for 12 hours. The cooling rate is set to 50 ° C / h from 1550 ° C to 800 ° C, and 30 ° C / h below 800 ° C.
將藉由上述方法所製造之燒結體1以長度成為1000mm之方式切斷，將設於支撐體2之長度180mm之爪構件2a插入於燒結體1之中空部7中150mm。爪構件2a具有3根支撐爪2a1、2a2、2a3。支撐爪2a1係將直徑10mm、長度180mm之不銹鋼製芯材2a11之外周以厚度5mm之作為硬質橡膠2a12的硬度90之氯平橡膠塗覆者，支撐 爪2a2、2a3係具有與支撐爪2a1同樣的構成。 The sintered body 1 produced by the above method was cut so as to have a length of 1000 mm, and the claw member 2a having a length of 180 mm provided on the support 2 was inserted into the hollow portion 7 of the sintered body 1 by 150 mm. The claw member 2a has three support claws 2a1, 2a2, 2a3. The support claw 2a1 is a chlorine flat rubber coater having a hardness of 90 mm and a hardness of 90 mm as a hard rubber 2a12 on the outer circumference of a stainless steel core material 2a11 having a diameter of 10 mm and a length of 180 mm. The claws 2a2, 2a3 have the same configuration as the support claws 2a1.
接著，使支撐爪2a1、2a2、2a3與燒結體1之內周面5抵接而支撐燒結體1，以旋轉速度20rpm於圓周方向使燒結體1旋轉，同時以砥石3研磨外周面6，將外徑加工為153.2mm。 Then, the support claws 2a1, 2a2, and 2a3 are brought into contact with the inner peripheral surface 5 of the sintered body 1 to support the sintered body 1, and the sintered body 1 is rotated in the circumferential direction at a rotational speed of 20 rpm, and the outer peripheral surface 6 is polished by the vermiculite 3, and The outer diameter is processed to 153.2 mm.
[實施例2] [Embodiment 2]
調配BET比表面積為4m2/g之ZnO粉末25.9質量%、BET比表面積為7m2/g之In2O3粉末44.2質量%、BET比表面積為10m2/g之Ga2O3粉末29.9質量%，於壺中藉由氧化鋯球進行球磨混合，調製原料粉末。 Formulation BET specific surface area of 4m 2 / g of ZnO powder of 25.9 mass%, BET specific surface area of 7m 2 / g of In 2 O 3 powder of 44.2 mass%, BET specific surface area was 10m 2 / g of Ga 2 O 3 powder of 29.9 mass %, the raw material powder was prepared by ball milling mixing in a pot by zirconia balls.
於該壺中，相對於上述原料粉末100質量%，分別添加0.3質量%之聚乙烯醇、0.4質量%之聚羧酸銨、1.0質量%之聚乙二醇、50質量%之水，進行球磨混合而調製漿體。 In the pot, 0.3% by mass of polyvinyl alcohol, 0.4% by mass of ammonium polycarboxylate, 1.0% by mass of polyethylene glycol, and 50% by mass of water are added to 100% by mass of the raw material powder to perform ball milling. Mix and modulate the slurry.
接著，以與實施例1同樣方法進行顆粒體之調製、成形體之製作及從成形體除去有機成分。進一步，以自常溫之昇溫速度300℃/h加熱至1400℃，保持12小時後，以降溫速度50℃/h冷卻而進行成形體之燒結，製作燒結體1。然後，將該燒結體1以與實施例1同樣方式將外徑加工為153.2mm。 Next, the preparation of the granules, the production of the molded body, and the removal of the organic component from the molded body were carried out in the same manner as in Example 1. Further, the mixture was heated to 1400 ° C from a normal temperature increase rate of 300 ° C / h, and after holding for 12 hours, the molded body was sintered by cooling at a temperature drop rate of 50 ° C / h to prepare a sintered body 1 . Then, the sintered body 1 was processed to have an outer diameter of 153.2 mm in the same manner as in the first embodiment.
[實施例3] [Example 3]
調配BET比表面積為4m2/g之ZnO粉末97質量%、BET比表面積為5m2/g之Al2O3粉末3質量%，於壺中藉由氧化鋯球進行球磨混合，調製原料粉末。 BET specific surface area of deployment of 4m 2 / g ZnO powder of 97% by mass, BET specific surface area of 5m 2 / g of Al 2 O 3 powder was 3 mass%, in the pot is performed by ball milling the mixed zirconia balls to prepare a raw material powder.
於該壺中，相對於上述原料粉末100質量%，分別添加0.3質量%之聚乙烯醇、0.4質量%之聚羧酸銨、1.0質量%之聚乙二醇、50質量%之水，進行球磨混合而調製漿體。 In the pot, 0.3% by mass of polyvinyl alcohol, 0.4% by mass of ammonium polycarboxylate, 1.0% by mass of polyethylene glycol, and 50% by mass of water are added to 100% by mass of the raw material powder to perform ball milling. Mix and modulate the slurry.
接著，以與實施例1同樣方法進行顆粒體之調製、成形體之製作及從成形體除去有機成分。進一步，以自常溫之昇溫速度300℃/h加熱至1400℃，保持10小時後，以降溫速度50℃/h冷卻而進行成形體之燒結，製作燒結體1。然後，將該燒結體1以與實施例1同樣方式將外徑加工為153.2mm。 Next, the preparation of the granules, the production of the molded body, and the removal of the organic component from the molded body were carried out in the same manner as in Example 1. Further, the mixture was heated to 1400 ° C from a normal temperature rise rate of 300 ° C / h, and after maintaining for 10 hours, the molded body was sintered by cooling at a temperature drop rate of 50 ° C / h to prepare a sintered body 1 . Then, the sintered body 1 was processed to have an outer diameter of 153.2 mm in the same manner as in the first embodiment.
[實施例4] [Example 4]
除了使用具有外徑150mm之圓柱狀的中子(心棒)之內徑220mm(壁厚10mm)、長度800mm之圓筒形狀之胺甲酸酯橡膠型以外，以與實施例1同樣方法製作燒結體1。 A sintered body was produced in the same manner as in Example 1 except that a cylindrical neutron (heart rod) having an outer diameter of 150 mm and an inner diameter of 220 mm (wall thickness: 10 mm) and a cylindrical shape of a urethane rubber having a length of 800 mm were used. 1.
將藉由上述方法所製造之燒結體1以長度成為600mm之方式切斷，將設於支撐體2之長度100mm之爪構件2a插入於燒結體1之中空部7中80mm。爪構件2a具有3根支撐爪2a1、2a2、2a3。支撐爪2a1係將直徑10mm、長度100mm之不銹鋼製芯材2a11之外周以厚度5mm之作為硬質橡膠2a12之硬度90之氯平橡膠塗覆者，支撐爪3a2、2a3係具有與支撐爪2a1同樣的構成。 The sintered body 1 produced by the above method was cut so as to have a length of 600 mm, and the claw member 2a having a length of 100 mm provided on the support 2 was inserted into the hollow portion 7 of the sintered body 1 by 80 mm. The claw member 2a has three support claws 2a1, 2a2, 2a3. The support claw 2a1 is a chlorine flat rubber applicator having a thickness of 5 mm and a hardness of 5 mm of the hard rubber 2a12 on the outer circumference of the stainless steel core material 2a11 having a diameter of 10 mm and a length of 100 mm, and the support claws 3a2, 2a3 have the same shape as the support claws 2a1. Composition.
接著，使支撐爪2a與燒結體1之內周面5抵接而支撐燒結體1，藉由切削加工機使燒結體1以旋轉速度20rpm於圓周方向旋轉，同時以砥石3研磨外周面6， 將外徑加工為153.2mm。 Then, the support claw 2a is brought into contact with the inner peripheral surface 5 of the sintered body 1 to support the sintered body 1, and the sintered body 1 is rotated in the circumferential direction at a rotational speed of 20 rpm by a cutting machine, and the outer peripheral surface 6 is polished by the vermiculite 3, The outer diameter was machined to 153.2 mm.
[實施例5] [Example 5]
除了使用實施例4之胺甲酸酯橡膠型以外，與實施例2同樣方法製作燒結體1。然後，將該燒結體1以與實施例4同樣方式將外徑加工為153.2mm。 A sintered body 1 was produced in the same manner as in Example 2 except that the urethane rubber type of Example 4 was used. Then, the sintered body 1 was processed to have an outer diameter of 153.2 mm in the same manner as in the fourth embodiment.
[實施例6] [Embodiment 6]
除了使用實施例4之胺甲酸酯橡膠型以外，與實施例3同樣方法製作燒結體1。然後，將該燒結體1以與實施例4同樣方式將外徑加工為153.2mm。 A sintered body 1 was produced in the same manner as in Example 3 except that the urethane rubber type of Example 4 was used. Then, the sintered body 1 was processed to have an outer diameter of 153.2 mm in the same manner as in the fourth embodiment.
[實施例7] [Embodiment 7]
將設於支撐體2之長度180mm之爪構件2a插入於與實施例1同樣地製作之燒結體1之中空部7中100mm。然後，以與實施例1同樣方式將燒結體1之外徑加工為153.2mm。 The claw member 2a having a length of 180 mm provided in the support body 2 was inserted into the hollow portion 7 of the sintered body 1 produced in the same manner as in the first embodiment, and was 100 mm. Then, the outer diameter of the sintered body 1 was processed to 153.2 mm in the same manner as in the first embodiment.
[比較例1] [Comparative Example 1]
除了使用具備未以硬質橡膠2a12塗覆而使芯材2a11露出之支撐爪2a1、2a2、2a3之爪構件2a以外，以與實施例1同樣方式將燒結體1之外徑加工為153.2mm。 The outer diameter of the sintered body 1 was processed to 153.2 mm in the same manner as in the first embodiment except that the claw members 2a having the supporting claws 2a1, 2a2, 2a3 which were not coated with the hard rubber 2a12 and exposed the core material 2a11 were used.
[比較例2] [Comparative Example 2]
除了使用與實施例2同樣地製作之燒結體1以外，以與比較例1同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 1, except that the sintered body 1 produced in the same manner as in Example 2 was used.
[比較例3] [Comparative Example 3]
除了使用與實施例3同樣地製作之燒結體1以外，以與比較例1同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 1, except that the sintered body 1 produced in the same manner as in Example 3 was used.
[比較例4] [Comparative Example 4]
將設於支撐體2之長度80mm之爪構件2a插入於與實施例1同樣地製作之燒結體1之中空部7中50mm。爪構件2a係具有3根支撐爪2a1、2a2、2a3。支撐爪2a1係將直徑10mm、長度80mm之不銹鋼製芯材2a11之外周以厚度5mm之作為硬質橡膠2a12之硬度90之氯平橡膠塗覆者，支撐爪2a2、2a3係具有與支撐爪2a1同樣的構成。 The claw member 2a having a length of 80 mm provided in the support body 2 was inserted into the hollow portion 7 of the sintered body 1 produced in the same manner as in the first embodiment, and was 50 mm. The claw member 2a has three support claws 2a1, 2a2, and 2a3. The support claw 2a1 is a chlorine flat rubber applicator having a thickness of 5 mm and a hardness of 5 mm of the hard rubber 2a12 on the outer circumference of the stainless steel core material 2a11 having a diameter of 10 mm and a length of 80 mm, and the support claws 2a2, 2a3 have the same shape as the support claw 2a1. Composition.
接著，使支撐爪2a與燒結體1之內周面5抵接而支撐燒結體1，藉由切削加工機使燒結體1以旋轉速度20rpm於圓周方向旋轉，同時以砥石3研磨外周面6，將外徑加工為153mm。 Then, the support claw 2a is brought into contact with the inner peripheral surface 5 of the sintered body 1 to support the sintered body 1, and the sintered body 1 is rotated in the circumferential direction at a rotational speed of 20 rpm by a cutting machine, and the outer peripheral surface 6 is polished by the vermiculite 3, The outer diameter was machined to 153 mm.
[比較例5] [Comparative Example 5]
除了使用與實施例2同樣地製作之燒結體1以外，以與比較例4同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 4 except that the sintered body 1 produced in the same manner as in Example 2 was used.
[比較例6] [Comparative Example 6]
除了使用與實施例3同樣地製作之燒結體1以外，以與比較例4同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 4, except that the sintered body 1 produced in the same manner as in Example 3 was used.
[比較例7] [Comparative Example 7]
除了使用與實施例4同樣地製作之燒結體1以外，以與比較例4同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 4, except that the sintered body 1 produced in the same manner as in Example 4 was used.
[比較例8] [Comparative Example 8]
除了使用與實施例5同樣地製作之燒結體1以外，以與比較例4同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 4 except that the sintered body 1 produced in the same manner as in Example 5 was used.
[比較例9] [Comparative Example 9]
除了使用與實施例6同樣地製作之燒結體1以外，以與比較例4同樣方式將外徑加工為153.2mm。 The outer diameter was processed to 153.2 mm in the same manner as in Comparative Example 4 except that the sintered body 1 produced in the same manner as in Example 6 was used.
[比較例10] [Comparative Example 10]
將設於支撐體2之長度130mm之爪構件2a插入於與實施例1同樣地製作之燒結體1之中空部7中95mm。爪構件2a係具有3根支撐爪2a1、2a2、2a3。支撐爪2a1係將直徑10mm、長度130mm之不銹鋼製芯材2a11之外周以厚度5mm之作為硬質橡膠2a12之硬度90之氯平橡膠塗覆者，支撐爪2a2、2a3係具有與支撐爪2a1同樣的構成。 The claw member 2a having a length of 130 mm provided in the support body 2 was inserted into the hollow portion 7 of the sintered body 1 produced in the same manner as in the first embodiment, 95 mm. The claw member 2a has three support claws 2a1, 2a2, and 2a3. The support claw 2a1 is a chlorine flat rubber applicator having a thickness of 5 mm and a hardness of 5 mm of the hard rubber 2a12 on the outer circumference of the stainless steel core material 2a11 having a diameter of 10 mm and a length of 130 mm, and the support claws 2a2, 2a3 have the same shape as the support claws 2a1. Composition.
接著，使支撐爪2a與燒結體1之內周面5抵接而支撐燒結體1，藉由切削加工機使燒結體1以旋轉速度20rpm於圓周方向旋轉，同時以砥石3研磨外周面6，將外徑加工為153.2mm。 Then, the support claw 2a is brought into contact with the inner peripheral surface 5 of the sintered body 1 to support the sintered body 1, and the sintered body 1 is rotated in the circumferential direction at a rotational speed of 20 rpm by a cutting machine, and the outer peripheral surface 6 is polished by the vermiculite 3, The outer diameter was machined to 153.2 mm.
實施例及比較例中所得之加工後之燒結體(筒狀陶瓷)1之評估方法係如以下所述。亦即，破裂之評估係以目視觀察、判斷研磨加工中之筒狀陶瓷1之破裂的有無、還有研磨加工後從支撐體2取下之筒狀陶瓷1之裂痕產生的有無。同樣地對於製作及加工之10根筒狀陶瓷1進行相同評估，於表1表示有幾根產生破裂。再者，表1所示之密度及抗折強度之值係將10根筒狀陶瓷1之測定結果平均者。又，各實施例及比較例中所加工之筒狀陶瓷1皆為滿足密度5.0g/cm3以上、抗折強度30MPa以上250MPa以下者。 The evaluation method of the sintered body (cylindrical ceramic) 1 obtained in the examples and the comparative examples is as follows. In other words, the evaluation of the fracture is performed by visual observation and determination of the presence or absence of cracking of the cylindrical ceramic 1 in the polishing process, and the presence or absence of cracks in the cylindrical ceramic 1 removed from the support 2 after the polishing process. Similarly, the same evaluation was made for the 10 cylindrical ceramics 1 produced and processed, and Table 1 shows that several cracks occurred. In addition, the values of the density and the flexural strength shown in Table 1 are the average of the measurement results of the ten cylindrical ceramics 1. Moreover, the cylindrical ceramics 1 processed in each of the examples and the comparative examples all satisfy the density of 5.0 g/cm 3 or more and the bending strength of 30 MPa or more and 250 MPa or less.
上述實施形態中，係以圓柱形狀來說明芯材2a11，但不限於此。例如，亦可為三角形狀、四角形狀等之多角形狀。在該情況下，為了將抵接時施加於內周面5之壓力分散，較佳係將芯材2a11之角進行圓弧化去角、或藉由硬質橡膠2a12之塗覆而使其與內周面5之抵接面積變大。 In the above embodiment, the core material 2a11 is described in a cylindrical shape, but is not limited thereto. For example, it may be a polygonal shape such as a triangular shape or a quadrangular shape. In this case, in order to disperse the pressure applied to the inner circumferential surface 5 at the time of contact, it is preferable to round the corner of the core material 2a11 or to coat it with the hard rubber 2a12. The area of the abutment of the circumference 5 becomes larger.
又，上述實施形態中，硬質橡膠2a12係以被覆芯材2a11之外周部分之方式塗覆者來說明，但不限於此。例如，亦可僅將與筒狀陶瓷1之內周面5抵接之部分以硬質橡膠2a12塗覆，又，亦可塗覆芯材2a11整體，亦即前端部分。 Further, in the above-described embodiment, the hard rubber 2a12 is described as being coated with the outer peripheral portion of the core material 2a11, but is not limited thereto. For example, only the portion that abuts against the inner circumferential surface 5 of the cylindrical ceramic 1 may be coated with the hard rubber 2a12, or the entire core material 2a11, that is, the front end portion may be applied.
該技術領域之人係可容易地推導出進一步之效果、變形例。因此，比本發明更廣範之態樣係如以上所表示且不限於記載之特定的內容及代表性實施形態。因此，未超出由所附之申請專利範圍及其均等物所定義之概括性發明概念之精神或範圍，可做各種變更。 Further effects and modifications can be easily derived by those skilled in the art. Therefore, the aspects of the invention are as described above and are not limited to the specific details and representative embodiments described. Therefore, various modifications may be made without departing from the spirit and scope of the inventions.
Claims (7)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014169807A JP5887391B1 (en) | 2014-08-22 | 2014-08-22 | Method for producing target material for sputtering target and claw member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201610199A TW201610199A (en) | 2016-03-16 |
| TWI573890B true TWI573890B (en) | 2017-03-11 |
Family
ID=55350488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104121277A TWI573890B (en) | 2014-08-22 | 2015-07-01 | Method for making a target material for sputtering target and claw member |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5887391B1 (en) |
| KR (1) | KR20160082255A (en) |
| CN (1) | CN105917022A (en) |
| TW (1) | TWI573890B (en) |
| WO (1) | WO2016027534A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20170113075A (en) * | 2016-03-28 | 2017-10-12 | 제이엑스금속주식회사 | Cylindrical sputtering target and manufacturing method of cylindrical sputtering target |
| JP6397869B2 (en) * | 2016-03-28 | 2018-09-26 | Ｊｘ金属株式会社 | Cylindrical sputtering target and manufacturing method thereof |
| KR20230080445A (en) | 2020-10-05 | 2023-06-07 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | imaging device |
| CN113635214A (en) * | 2021-07-26 | 2021-11-12 | 先导薄膜材料（广东）有限公司 | Sputtering target grinding device and machining method |
| CN114394818B (en) * | 2022-02-10 | 2022-10-18 | 江苏东玖光电科技有限公司 | Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200714730A (en) * | 2005-10-03 | 2007-04-16 | Thermal Conductive Bonding Inc | Very long cylindrical sputtering target and method for manufacturing |
| TW201326437A (en) * | 2011-12-23 | 2013-07-01 | Metal Ind Res & Dev Ct | Composite vacuum sputtering apparatus with spinning and revolution capabilities |
| TW201350459A (en) * | 2012-01-18 | 2013-12-16 | Mitsui Mining & Smelting Co | Ceramic cylindrical sputtering target and method for manufacturing thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6316935A (en) * | 1986-07-04 | 1988-01-23 | Toshiba Corp | Chuck for machining ceramics |
| JP4961672B2 (en) * | 2004-03-05 | 2012-06-27 | 東ソー株式会社 | Cylindrical sputtering target, ceramic sintered body, and manufacturing method thereof |
| DE102005014108A1 (en) * | 2005-03-22 | 2006-09-28 | Schott Ag | Method for grinding a workpiece made from glass, glass-ceramic or ceramic comprises clamping the workpiece to a holder, driving the workpiece about an axis of rotation and processing the workpiece using a grinding tool |
| WO2014030362A1 (en) * | 2012-08-22 | 2014-02-27 | Jx日鉱日石金属株式会社 | Cylindrical indium sputtering target and process for producing same |
| CN203751795U (en) * | 2014-03-25 | 2014-08-06 | 四川精瑞硬质合金科技发展有限公司 | Fixture for turning internal and external circular-arc-shaped surfaces of long shaft type cylindrical workpieces |
| CN203751797U (en) * | 2014-03-25 | 2014-08-06 | 四川精瑞硬质合金科技发展有限公司 | Fixture for turning long shaft type cylindrical workpieces |
-
2014
- 2014-08-22 JP JP2014169807A patent/JP5887391B1/en active Active
-
2015
- 2015-05-20 CN CN201580004891.0A patent/CN105917022A/en active Pending
- 2015-05-20 WO PCT/JP2015/064530 patent/WO2016027534A1/en active Application Filing
- 2015-05-20 KR KR1020167016638A patent/KR20160082255A/en not_active Application Discontinuation
- 2015-07-01 TW TW104121277A patent/TWI573890B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200714730A (en) * | 2005-10-03 | 2007-04-16 | Thermal Conductive Bonding Inc | Very long cylindrical sputtering target and method for manufacturing |
| TW201326437A (en) * | 2011-12-23 | 2013-07-01 | Metal Ind Res & Dev Ct | Composite vacuum sputtering apparatus with spinning and revolution capabilities |
| TW201350459A (en) * | 2012-01-18 | 2013-12-16 | Mitsui Mining & Smelting Co | Ceramic cylindrical sputtering target and method for manufacturing thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5887391B1 (en) | 2016-03-16 |
| WO2016027534A1 (en) | 2016-02-25 |
| KR20160082255A (en) | 2016-07-08 |
| TW201610199A (en) | 2016-03-16 |
| CN105917022A (en) | 2016-08-31 |
| JP2016044333A (en) | 2016-04-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI573890B (en) | Method for making a target material for sputtering target and claw member | |
| TWI540114B (en) | Ceramic cylindrical sputtering target and method for manufacturing thereof | |
| JP5816394B1 (en) | ITO sputtering target material and manufacturing method thereof | |
| JP6496681B2 (en) | Target material for cylindrical sputtering target and cylindrical sputtering target | |
| JP6412439B2 (en) | Method for manufacturing ceramic target material and method for manufacturing cylindrical sputtering target | |
| CN104211407A (en) | Process for forming large-size complex-shaped silicon carbide ceramic biscuit | |
| KR101661114B1 (en) | A manufacturing method of high toughness-Yttria with addition of Alumina and zirconia | |
| JP5784849B2 (en) | Ceramic cylindrical sputtering target material and manufacturing method thereof | |
| JP6678157B2 (en) | Method for manufacturing cylindrical target material and method for manufacturing cylindrical sputtering target | |
| TW201641728A (en) | Ceramic tube-like target material and tube-like sputtering target | |
| TWI720962B (en) | Method for producing sputtering target material | |
| JP6875890B2 (en) | Manufacturing method of cylindrical oxide sintered body and floor plate | |
| KR20220110478A (en) | Manufacturing method of cylindrical sputtering target and firing jig used for the manufacturing method | |
| JP2018044213A (en) | Cylindrical sputtering target |