TW201641728A - Ceramic tube-like target material and tube-like sputtering target - Google Patents

Ceramic tube-like target material and tube-like sputtering target Download PDF

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TW201641728A
TW201641728A TW105106476A TW105106476A TW201641728A TW 201641728 A TW201641728 A TW 201641728A TW 105106476 A TW105106476 A TW 105106476A TW 105106476 A TW105106476 A TW 105106476A TW 201641728 A TW201641728 A TW 201641728A
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cylindrical target
cylindrical
target
peripheral surface
sputtering
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石田新太郎
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三井金屬鑛業股份有限公司
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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Abstract

An embodiment of a ceramic tube-like target material of this invention has a surface roughness Ra of 1.2 [mu]m or less on the inner periphery.

Description

陶瓷圓筒形靶材及圓筒形濺鍍靶 Ceramic cylindrical target and cylindrical sputtering target

本發明所揭示之實施形態係有關陶瓷圓筒形靶材及圓筒形濺鍍靶。 Embodiments disclosed herein relate to ceramic cylindrical targets and cylindrical sputtering targets.

已知有一種磁子型旋轉陰極濺鍍裝置,係於圓筒形之靶材的內側具有磁場產生裝置,係從內側冷卻靶材,同時進一步一邊使此靶材旋轉,一邊進行濺鍍。在如此之濺鍍裝置中,靶材之外周表面的全面會被腐蝕且被均勻地切削。因此,相對於在以往之平板型磁子濺鍍裝置中使用效率為20至30%,在磁子型旋轉陰極濺鍍裝置中可得到70%以上非常高之使用效率。 A magneto-type rotary cathode sputtering apparatus is known which has a magnetic field generating device inside a cylindrical target, and cools the target from the inside while further rotating the target while performing sputtering. In such a sputtering apparatus, the entire peripheral surface of the target is corroded and uniformly cut. Therefore, compared with the conventional flat-type magnetron sputtering apparatus, the use efficiency is 20 to 30%, and a very high use efficiency of 70% or more can be obtained in the magneto-type rotary cathode sputtering apparatus.

又,在磁子型旋轉陰極濺鍍裝置中係藉由一邊使靶材旋轉一邊進行濺鍍,從而相較於平板型磁子濺鍍裝置,可於每單位面積投入大的功率,故可得到高的成膜速度。 Further, in the magneto-type rotary cathode sputtering apparatus, sputtering is performed while rotating the target material, so that a large power can be input per unit area compared to the flat-type magnetic particle sputtering apparatus, so that it is possible to obtain High film formation speed.

如此之旋轉陰極濺鍍方式,在使用對圓筒形狀容易加工且機械強度強之金屬製的靶材者已廣泛普及化。相對於此,陶瓷製之靶材相較於金屬製之靶材,具有 機械強度低且脆之特性。 Such a rotating cathode sputtering method has been widely used in the use of a metal target which is easy to process in a cylindrical shape and has high mechanical strength. In contrast, a ceramic target has a target compared to a metal target. Low mechanical strength and brittle properties.

進一步,陶瓷材料之熱膨脹係數係小於使用來作為圓筒形支撐管之金屬材料的熱膨脹係數,故容易於靶材產生起因於圓筒形靶材與支撐管之熱膨脹量的差異之龜裂。因此,有關陶瓷製之圓筒形靶材遂研究起克服此等課題的對策。 Further, the coefficient of thermal expansion of the ceramic material is smaller than the coefficient of thermal expansion of the metal material used as the cylindrical support tube, so that the target is likely to cause cracks due to the difference in the amount of thermal expansion of the cylindrical target and the support tube. Therefore, research on cylindrical targets made of ceramics has been taken to overcome these problems.

專利文獻1中已揭示在利用低融點焊料將相對密度95%以上之陶瓷圓筒形靶材接合於圓筒形基材之圓筒形濺鍍靶,抑制接合時之龜裂的技術。然而,對於濺鍍中之靶材的龜裂對策尚未被考量。 Patent Document 1 discloses a technique in which a ceramic cylindrical target having a relative density of 95% or more is bonded to a cylindrical sputtering target of a cylindrical substrate by a low melting point solder to suppress cracking during joining. However, countermeasures against cracking of targets in sputtering have not been considered.

專利文獻2係揭示一種控制陶瓷圓筒形靶材之研磨角度及外周面之表面粗糙度以抑制於濺鍍初期所產生之龜裂的技術。然而,外周面之表面粗糙度所造成的靶材之龜裂係在濺鍍開始之後極短的期間內,在該技術中係濺鍍中,無法特別抑制濺鍍末期之靶材的龜裂。 Patent Document 2 discloses a technique for controlling the polishing angle of a ceramic cylindrical target and the surface roughness of the outer peripheral surface to suppress cracking generated at the initial stage of sputtering. However, the crack of the target caused by the surface roughness of the outer peripheral surface is extremely short after the start of sputtering, and in the sputtering in this technique, the crack of the target at the end of sputtering cannot be particularly suppressed.

專利文獻3係揭示一種將陶瓷圓筒形靶材及圓筒形基材以接合材接合而成之圓筒形濺鍍靶中,減少接合材不存在之處的面積,以降低濺鍍中之靶材的龜裂、缺陷、異常放電、小結粒之技術。然而,在該文獻之技術內容中對於抑制陶瓷圓筒形靶材之龜裂並不充分。 Patent Document 3 discloses a cylindrical sputtering target in which a ceramic cylindrical target and a cylindrical substrate are joined by a bonding material, and the area where the bonding material does not exist is reduced to reduce the sputtering. Techniques for cracking, defects, abnormal discharge, and small agglomeration of targets. However, in the technical content of this document, it is not sufficient to suppress cracking of the ceramic cylindrical target.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2005-281862號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-281862

[專利文獻2]日本特開2009-30165號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2009-30165

[專利文獻3]日本特開2010-18883號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2010-18883

如此地,上述之習知技術係依然無法得到對於抑制龜裂非常優異之陶瓷圓筒形靶材及圓筒形濺鍍靶,而仍有進一步改善之餘地。 As described above, the above-described conventional techniques still fail to obtain a ceramic cylindrical target and a cylindrical sputtering target which are excellent in suppressing cracking, and there is still room for further improvement.

實施形態之一態樣係有鑑於上述而成者,目的在於提供一種至使用壽命結束為止可進一步抑制龜裂發生的陶瓷圓筒形靶材及圓筒形濺鍍靶。 In view of the above, it is an object of the present invention to provide a ceramic cylindrical target and a cylindrical sputtering target which can further suppress the occurrence of cracks until the end of the service life.

實施形態之陶瓷圓筒形靶材係內周面之表面粗糙度Ra為1.2μm以下。 The surface roughness Ra of the inner peripheral surface of the ceramic cylindrical target of the embodiment is 1.2 μm or less.

若依據實施形態之一態樣,可提供一種至使用壽命結束為止可進一步抑制龜裂發生的陶瓷圓筒形靶材及圓筒形濺鍍靶。 According to one aspect of the embodiment, it is possible to provide a ceramic cylindrical target and a cylindrical sputtering target which can further suppress the occurrence of cracks until the end of the service life.

1‧‧‧圓筒形濺鍍靶(圓筒形靶) 1‧‧‧Cylindrical Sputtering Target (Cylindrical Target)

2‧‧‧陶瓷圓筒形靶材(圓筒形靶材) 2‧‧‧Ceramic cylindrical target (cylindrical target)

2a‧‧‧外周面 2a‧‧‧outer surface

2b‧‧‧內周面 2b‧‧‧ inner circumference

2c‧‧‧兩端面 2c‧‧‧ both ends

3‧‧‧支撐管 3‧‧‧Support tube

3a‧‧‧外周面 3a‧‧‧ outer perimeter

4‧‧‧接合材 4‧‧‧Material

第1圖係表示陶瓷圓筒形靶材及圓筒形濺鍍靶之構成概要的示意圖。 Fig. 1 is a schematic view showing the outline of the configuration of a ceramic cylindrical target and a cylindrical sputtering target.

第2圖係第1圖之A-A’剖面圖。 Fig. 2 is a cross-sectional view taken along line A-A' of Fig. 1.

以下,參照附隨的圖式,詳細說明本案揭 示之陶瓷圓筒形靶材及圓筒形濺鍍靶之實施形態。又,本發明係不受以下所示之實施形態所限定。 Hereinafter, the case will be described in detail with reference to the accompanying drawings. Embodiments of the ceramic cylindrical target and the cylindrical sputtering target are shown. Further, the present invention is not limited to the embodiments shown below.

第1圖係表示圓筒形濺鍍靶之構成概要之示意圖,第2圖係第1圖之A-A’剖面圖。又,為容易了解說明,於第1圖及第2圖係圖示以垂直向上為正方向,以垂直向下為負方向之包含Z軸的3維正交座標系。 Fig. 1 is a schematic view showing a schematic configuration of a cylindrical sputtering target, and Fig. 2 is a cross-sectional view taken along line A-A' of Fig. 1. In addition, for the sake of easy understanding, the first and second drawings show a three-dimensional orthogonal coordinate system including a Z-axis in a vertical direction in a vertical direction and a negative direction in a vertical direction.

如第1圖及第2圖所示,圓筒形濺鍍靶(以下,稱為「圓筒形靶」)1係具備陶瓷圓筒形靶材(以下,稱為「圓筒形靶材」)2及支撐管3。圓筒形靶材2及支撐管3係藉由接合材4接合。 As shown in FIG. 1 and FIG. 2, a cylindrical sputtering target (hereinafter referred to as a "cylindrical target") 1 includes a ceramic cylindrical target (hereinafter referred to as a "cylindrical target"). 2) and support tube 3. The cylindrical target 2 and the support tube 3 are joined by a bonding material 4.

此處,圓筒形靶材2係以具有剖面同心圓狀之外周面2a及內周面2b、及規定長度方向之兩端的端面2c1、2c2之圓筒形所形成的陶瓷所構成。構成如此之圓筒形靶材2之陶瓷係可舉例如含有In、Zn、Al、Ga、Zr、Ti、Sn、Mg及Si之中至少1種之氧化物等。具體而言,係可例示Sn之含量以SnO2換算為1至10質量%之ITO(In2O3-SnO2)、In之含量以In2O3換算為10至60質量%、Ga之含量以Ga2O3換算為10至60質量%、Zn之含量以ZnO換算為10至60質量%之IGZO(In2O3-Ga2O3-ZnO)、Al之含量以Al2O3換算為0.1至5質量%之AZO(Al2O3-ZnO)及Zn之含量以ZnO換算為1至15質量%之IZO(In2O3-ZnO)等,但不限定於此等。又,端面2c1、2c2係總括稱為兩端面2c。 Here, the cylindrical target 2 is made of a ceramic having a cylindrical shape in which the outer peripheral surface 2a and the inner peripheral surface 2b of the cross section are concentrically formed, and the end faces 2c1 and 2c2 at both ends in the predetermined longitudinal direction. The ceramics constituting the cylindrical target 2 include, for example, an oxide of at least one of In, Zn, Al, Ga, Zr, Ti, Sn, Mg, and Si. Specifically, the content of Sn is ITO (In 2 O 3 -SnO 2 ) in an amount of 1 to 10% by mass in terms of SnO 2 , and the content of In is 10 to 60% by mass in terms of In 2 O 3 , and Ga is used. The content is 10 to 60% by mass in terms of Ga 2 O 3 , the content of Zn is 10 to 60% by mass of IGZO (In 2 O 3 -Ga 2 O 3 -ZnO), and the content of Al is Al 2 O 3 . In the case of IZO (In 2 O 3 -ZnO) in which the content of AZO (Al 2 O 3 -ZnO) and Zn is 0.1 to 15% by mass in terms of ZnO, it is not limited thereto. Further, the end faces 2c1 and 2c2 are collectively referred to as both end faces 2c.

又,支撐管3係可插通地形成於圓筒形靶材 2之中空部分的圓筒形之構件,亦稱為圓筒形靶1之基材。如此之支撐管3之材料係可適宜選擇習知所使用者而使用。例如,可應用不銹鋼、鈦、鈦合金等作為支撐管3,但不限定於此等。 Further, the support tube 3 is insertably formed in a cylindrical target The cylindrical member of the hollow portion of 2 is also referred to as the substrate of the cylindrical target 1. The material of the support tube 3 can be suitably selected for use by a user of the prior art. For example, stainless steel, titanium, titanium alloy, or the like can be applied as the support tube 3, but is not limited thereto.

又,接合材4係將圓筒形靶材2之內周面2b與支撐管3之外周面3a接合。如此之接合材4係可適宜選擇習知所使用者而使用。例如,可應用銦、銦-錫合金等作為接合材4,但不限定於此等。 Further, the bonding material 4 bonds the inner circumferential surface 2b of the cylindrical target 2 to the outer circumferential surface 3a of the support tube 3. Such a bonding material 4 can be suitably selected and used by a user. For example, indium, indium-tin alloy, or the like can be used as the bonding material 4, but is not limited thereto.

在習知之平板型磁子濺鍍裝置所使用之平板型靶材係使用效率低,使用後殘存之靶材為使用前之靶材的厚度之一半左右,故因靶材之強度降低所造成之龜裂的風險性低。因此,在平板型之靶材中係很少考量濺鍍中之龜裂,特別是不會考量到有關與被稱為支撐板之基材的接合面之表面形狀。同樣地,至今為止,在圓筒形靶中亦絲毫未考量到有關內周面2b側之表面形狀。 The flat type target used in the conventional flat type magnetron sputtering apparatus is low in use efficiency, and the target remaining after use is about one-half of the thickness of the target before use, so that the strength of the target is lowered. The risk of cracking is low. Therefore, in the flat type target, the crack in the sputtering is rarely considered, and in particular, the surface shape of the joint surface with respect to the substrate called the support plate is not considered. Similarly, the surface shape of the inner peripheral surface 2b side has not been considered in the cylindrical target until now.

另一方面,在如第1圖及第2圖所示般所構成之圓筒形靶1中,圓筒形靶材2之外周面2a係成為濺鍍面,圓筒形靶材2係從外周面2a側依序被濺鍍消耗。在圓筒形靶1中所使用之圓筒形靶材2相較於上述之平板型靶材,係使用效率高,且隨著使用而圓筒形靶材2之厚度從外周面2a側整體地薄化。此時,圓筒形靶材2之內周面2b即使繼續濺鍍,亦不被消耗而仍殘留至最後。 On the other hand, in the cylindrical target 1 configured as shown in Fig. 1 and Fig. 2, the outer peripheral surface 2a of the cylindrical target 2 is a sputtering surface, and the cylindrical target 2 is The outer peripheral surface 2a side is sequentially consumed by sputtering. The cylindrical target 2 used in the cylindrical target 1 is more efficient to use than the above-described flat type target, and the thickness of the cylindrical target 2 is from the outer peripheral surface 2a side as a whole. The ground is thin. At this time, even if the inner peripheral surface 2b of the cylindrical target 2 continues to be sputtered, it is not consumed and remains until the end.

如上述,圓筒形靶1中係受到支撐管3之熱膨脹而對圓筒形靶材2施予徑方向之力。因此,在濺鍍中 特別經薄化之濺鍍末期中的圓筒形靶材2係較濺鍍前之圓筒形靶材2更容易龜裂。相對於此,藉由適當控制至今未考量到之圓筒形靶材2之內周面2b側之表面形狀,特別明顯地可保持在濺鍍中經薄化之濺鍍末期之圓筒形靶材2之機械強度達可抑制龜裂之發生的程度。以下係進一步說明有關實施形態之圓筒形靶材2。 As described above, the cylindrical target 1 is subjected to thermal expansion of the support tube 3 to impart a radial direction force to the cylindrical target 2. Therefore, in sputtering The cylindrical target 2 in the final thinning stage of the thinning is more likely to be cracked than the cylindrical target 2 before sputtering. On the other hand, by appropriately controlling the surface shape of the inner peripheral surface 2b side of the cylindrical target 2 which has not been considered so far, it is particularly remarkable to maintain the cylindrical target at the end of the sputtering which is thinned during sputtering. The mechanical strength of the material 2 is such as to inhibit the occurrence of cracks. The cylindrical target 2 according to the embodiment will be further described below.

實施形態之圓筒形靶材2係內周面2b之表面粗糙度Ra為1.2μm以下,較佳係1.0μm以下,更佳係0.8μm以下,進一步更佳係0.5μm以下。若內周面2b之表面粗糙度Ra超過1.2μm,則在例如因實施使用率80%以上之經長期濺鍍,圓筒形靶材2薄化時容易產生龜裂。又,抑制起因於內周面2b之表面形狀的龜裂係內周面2b之表面粗糙度Ra愈低愈佳,但內周面2b之表面粗糙度Ra愈低,內周面2b與接合材4之濡濕性愈差。若內周面2b與接合材4之濡濕性差,使圓筒形靶材2與支撐管3接合之後,於內周面2b與接合材4之間容易產生剝離。若於內周面2b與接合材4之間產生剝離,濺鍍中剝離後之部分無法被充分冷卻,而圓筒形靶材2容易龜裂。若有鑑於如此之事情,內周面2b之表面粗糙度Ra係以0.05μm以上為佳,以0.1μm以上為較佳,以0.15μm以上為更佳,以0.2μm以上為特佳。 The cylindrical surface target 2 of the embodiment has a surface roughness Ra of 1.2 μm or less, preferably 1.0 μm or less, more preferably 0.8 μm or less, and still more preferably 0.5 μm or less. When the surface roughness Ra of the inner peripheral surface 2b exceeds 1.2 μm, for example, when the cylindrical target 2 is thinned by long-term sputtering due to the application rate of 80% or more, cracking is likely to occur. Further, it is preferable that the surface roughness Ra of the crack-based inner peripheral surface 2b due to the surface shape of the inner peripheral surface 2b is lower, but the surface roughness Ra of the inner peripheral surface 2b is lower, and the inner peripheral surface 2b and the joint material are lower. The worse the wetness of 4 is. When the inner peripheral surface 2b and the bonding material 4 are inferior in wettability, after the cylindrical target 2 is joined to the support tube 3, peeling easily occurs between the inner peripheral surface 2b and the bonding material 4. When peeling occurs between the inner peripheral surface 2b and the bonding material 4, the portion after peeling during sputtering cannot be sufficiently cooled, and the cylindrical target 2 is easily cracked. In view of such a situation, the surface roughness Ra of the inner peripheral surface 2b is preferably 0.05 μm or more, more preferably 0.1 μm or more, more preferably 0.15 μm or more, and particularly preferably 0.2 μm or more.

此處,所謂表面粗糙度Ra係相當於JIS B0601:2013之「算術平均粗糙度Ra」之值。又,表面粗糙度Ra係可於內周面2b之表面加工中藉由改變常用之磨 石編號或加工速度來控制。 Here, the surface roughness Ra corresponds to the value of "arithmetic average roughness Ra" of JIS B0601:2013. Further, the surface roughness Ra can be changed in the surface processing of the inner peripheral surface 2b by changing the commonly used grinding Stone number or processing speed to control.

又,圓筒形靶材2之外周面2a之表面粗糙度Ra較佳係1.5μm以下,更佳係1.0μm以下,最佳係0.5μm以下。若外周面2a之表面粗糙度Ra超過1.5μm,有時對濺鍍初期之小結粒(nodule)之發生或支撐管3的接合中之龜裂會造成影響。然而,如上述,圓筒形靶材2之外周面2a會受濺鍍依序被消耗,故除了使用初期,對於圓筒形靶材2之龜裂的影響係極少。又,外周面2a之表面粗糙度Ra之最小值並無特別規定,但加工作業之效率上,較佳係0.05μm以上。 Moreover, the surface roughness Ra of the outer peripheral surface 2a of the cylindrical target 2 is preferably 1.5 μm or less, more preferably 1.0 μm or less, and most preferably 0.5 μm or less. When the surface roughness Ra of the outer peripheral surface 2a exceeds 1.5 μm, the occurrence of small nodule at the initial stage of sputtering or cracking during joining of the support tube 3 may be affected. However, as described above, the outer peripheral surface 2a of the cylindrical target 2 is sequentially consumed by sputtering, so that the influence on the crack of the cylindrical target 2 is extremely small except for the initial stage of use. Further, the minimum value of the surface roughness Ra of the outer peripheral surface 2a is not particularly limited, but the efficiency of the processing operation is preferably 0.05 μm or more.

又,圓筒形靶材2之兩端面2c之表面粗糙度Ra較佳係1.4μm以下,更佳係1.2μm,進一步更佳係1.0μm以下。若圓筒形靶材2之兩端面2c之表面粗糙度Ra為1.4μm以下,可防止或抑制例如起因於濺鍍時之熱膨脹等的圓筒形靶材2之龜裂。又,濺鍍時產生之微粒及電弧會降低,可得到良好的膜質。又,圓筒形靶材2之兩端面2c之表面粗糙度Ra之最小值並無特別規定,但加工作業之效率上,較佳係0.05μm以上。 Further, the surface roughness Ra of both end faces 2c of the cylindrical target 2 is preferably 1.4 μm or less, more preferably 1.2 μm, still more preferably 1.0 μm or less. When the surface roughness Ra of the both end faces 2c of the cylindrical target 2 is 1.4 μm or less, cracking of the cylindrical target 2 due to, for example, thermal expansion at the time of sputtering can be prevented or suppressed. Moreover, the particles and arc generated during sputtering are lowered, and a good film quality can be obtained. Further, the minimum value of the surface roughness Ra of the both end faces 2c of the cylindrical target 2 is not particularly limited, but the efficiency of the working operation is preferably 0.05 μm or more.

又,圓筒形靶材2之相對密度較佳係95%以上,更佳係98%以上,進一步更佳係99%以上。若圓筒形靶材2之相對密度為95%以上,可防止或抑制例如起因於濺鍍時之熱膨脹等的圓筒形靶材2之龜裂。又,濺鍍時產生之微粒及電弧會降低,可得到良好的膜質。此處,有關圓筒形靶材2之相對密度之測定方法,說明於以下。 Further, the relative density of the cylindrical target 2 is preferably 95% or more, more preferably 98% or more, still more preferably 99% or more. When the relative density of the cylindrical target 2 is 95% or more, cracking of the cylindrical target 2 due to, for example, thermal expansion at the time of sputtering can be prevented or suppressed. Moreover, the particles and arc generated during sputtering are lowered, and a good film quality can be obtained. Here, the method of measuring the relative density of the cylindrical target 2 will be described below.

圓筒形靶材2之相對密度係依據阿基米德法來測定。具體而言,係將圓筒形靶材2之空中重量除以體積(=圓筒形靶材2之水中重量/計測溫度中之水比重),相對於依據下述式(X)之理論密度ρ(g/cm3)的百分率之值設為相對密度(單位:%)。 The relative density of the cylindrical target 2 was determined in accordance with the Archimedes method. Specifically, the air weight of the cylindrical target 2 is divided by the volume (=the weight of the water of the cylindrical target 2 / the specific gravity of the water in the measured temperature) with respect to the theoretical density according to the following formula (X) The value of the percentage of ρ (g/cm 3 ) is set as the relative density (unit: %).

上述式(X)中,C1至Ci係分別表示構成圓筒形靶材2之構成物質之含量(質量%),ρ 1ρ i係表示對應於C1至Ci之各構成物質之密度(g/cm3)。 In the above formula (X), C 1 to C i represent the content (% by mass) of the constituent materials constituting the cylindrical target 2, respectively, and ρ 1 to ρ i represent the constituent materials corresponding to C 1 to C i . Density (g/cm 3 ).

又,圓筒形靶材2較佳係內外徑之偏心為0.2mm以下,更佳係0.1mm以下,進一步更佳係0.05mm以下。若偏心超過0.2mm,如前述,受支撐管3之熱膨脹對圓筒形靶材2不均勻地施加徑方向之力的傾向變大,即使內周面2b之表面粗糙度Ra非常小,也易產生龜裂。進一步因濺鍍所致之消耗而殘存的圓筒形靶材2之厚度形成不均,有時圓筒形靶材2之使用效率會降低。此處,所謂「內外徑之偏心」係圓筒形靶材2之外徑之中心點、及內徑之中心點之偏移幅寬。 Further, the cylindrical target 2 preferably has an eccentricity of 0.2 mm or less, more preferably 0.1 mm or less, and still more preferably 0.05 mm or less. If the eccentricity exceeds 0.2 mm, as described above, the tendency of the thermal expansion of the supported tube 3 to uniformly apply a force in the radial direction to the cylindrical target 2 becomes large, and even if the surface roughness Ra of the inner peripheral surface 2b is very small, it is easy. Cracks are produced. Further, the thickness of the cylindrical target 2 remaining due to the consumption due to sputtering is uneven, and the use efficiency of the cylindrical target 2 may be lowered. Here, the "eccentricity of the inner and outer diameters" is the width of the center point of the outer diameter of the cylindrical target 2 and the center point of the inner diameter.

又,實施形態之圓筒形靶1係圓筒形靶材2與接合材4之接合率較佳為98%以上,更佳係98.5%以上,再更佳係99%以上,特佳係99.5%以上。若接合率未達98%,未被接合之部分的冷卻未充分進行,而即使內周面 2b之表面粗糙度Ra非常小,圓筒形靶材2易龜裂。此處,所謂「接合率」係相對於圓筒形靶材2之內周面2b之面積,於圓筒形靶材2之內周面2b接合接合材4之面積的比率。此接合率係可從超音波探傷檢査或X射線檢査所得之圖像以圖像解析軟體測定面積並求出。又,從測定之正確性、容易性之觀點,以超音波探傷檢査為較佳。另一方面,在X射線檢査中因將彎曲之薄膜插入於支撐管3之內部而進行檢查,故有無法正確測定面積、或圓筒形靶材2與接合材4之剝離不易被檢測出等不佳情形。 Further, in the cylindrical target 1 of the embodiment, the bonding ratio between the cylindrical target 2 and the bonding material 4 is preferably 98% or more, more preferably 98.5% or more, still more preferably 99% or more, and particularly preferably 99.5. %the above. If the bonding ratio is less than 98%, the cooling of the unjoined portion is not sufficiently performed, even if the inner peripheral surface The surface roughness Ra of 2b is very small, and the cylindrical target 2 is easily cracked. Here, the "joining ratio" is a ratio of the area of the bonding material 4 to the inner peripheral surface 2b of the cylindrical target 2 with respect to the area of the inner peripheral surface 2b of the cylindrical target 2. This bonding ratio can be obtained by measuring the area of the image obtained by the ultrasonic flaw detection test or the X-ray inspection using an image analysis software. Further, from the viewpoint of accuracy and easiness of measurement, ultrasonic flaw detection is preferred. On the other hand, in the X-ray inspection, the curved film is inserted into the support tube 3 to be inspected, so that the area cannot be accurately measured, or the peeling of the cylindrical target 2 and the bonding material 4 is not easily detected. Bad situation.

又,在上述中,係說明有關圓筒形靶1係於1個支撐管3之外側接合1個圓筒形靶材2的例,但不限定於此。例如,亦可使用於1或2個以上之支撐管3之外側將2個以上之圓筒形靶材2排列在同一軸線上而被接合者作為圓筒形靶1。 In the above, an example in which the cylindrical target 1 is joined to one cylindrical target 2 on the outer side of one support tube 3 is described, but the invention is not limited thereto. For example, two or more cylindrical targets 2 may be arranged on the same axis on the outer side of one or two or more support tubes 3, and the joint may be used as the cylindrical target 1.

其次,說明有關圓筒形靶材2之製造方法之一例。圓筒形靶材2係經過如下步驟製作:造粒含有陶瓷原料粉末及有機添加物之漿料,製作顆粒體之造粒步驟;使此顆粒體成形,製作圓筒形之成形體的成形步驟;燒製此成形體而製作燒製體之燒製步驟。又,燒製體之製作方法係不限定於上述者,而可為任何之方法。 Next, an example of a method of manufacturing the cylindrical target 2 will be described. The cylindrical target 2 is produced by granulating a slurry containing a ceramic raw material powder and an organic additive, granulating a granule, and forming a cylindrical shaped body to form a cylindrical shaped body. The firing step of firing the shaped body to produce a fired body. Further, the method of producing the fired body is not limited to the above, and may be any method.

在上述之燒製步驟中所得之燒製體,係以比預先設計為圓筒形靶材2之尺寸更長且厚之方式製作。而且,對於燒製體之長度方向係藉由例如切斷或切削,對於外徑及內徑係藉由例如研磨,以成為各別設計之尺寸之 方式被加工。 The fired body obtained in the above-described firing step is produced to be longer and thicker than the size of the cylindrical target 2 previously designed. Further, the longitudinal direction of the fired body is, for example, cut or cut, and the outer diameter and the inner diameter are, for example, ground to be individually designed. The way is processed.

研磨成為圓筒形靶材2之燒製體之外周面2a側及內周面2b側的方法,有:橫移方向研磨及柱塞方向研磨之2種方式。所謂橫移方向研磨係一邊朝與燒製體之圓筒軸平行的方向移動磨石,一邊進行研磨之方式。所謂柱塞方向研磨係賦予不進行磨石之進退移動而僅切入方向之運動而進行研磨之方法。 The method of polishing the outer peripheral surface 2a side and the inner peripheral surface 2b side of the fired body of the cylindrical target 2 is two types of methods of traverse direction polishing and plunger direction polishing. In the traverse direction polishing system, the grinding is performed while moving the grindstone in a direction parallel to the cylindrical axis of the fired body. The plunger direction polishing system is a method of polishing without moving the movement of the grindstone in the direction of the cutting direction.

又,研磨燒製體之研磨裝置係有:一邊使燒製體之圓筒軸為橫向旋轉,一邊進行加工之橫軸圓筒研磨盤;一邊使燒製體之圓筒軸豎起而旋轉,一邊進行縱軸圓筒研磨盤之2種類,可使用任一種。又,加工內周面2b側時,使用縱軸圓筒研磨盤者,因不易受到重力之影響,且表面粗糙度Ra或加工精度提升,故較佳。尤其,在超過長度500mm之長條物中,加工燒製體之內周面2b側時,使用縱軸圓筒研磨盤者,因比較容易減少表面粗糙度Ra,故為有利。然而,亦可於內周面2b側之加工上使用橫軸圓筒研磨盤,又,亦可使用圓筒研磨盤以外之研磨裝置。 In the polishing apparatus for polishing the fired body, the horizontal axis cylindrical grinding disk is processed while the cylindrical shaft of the fired body is rotated in the lateral direction, and the cylindrical shaft of the fired body is erected and rotated. Any of two types of vertical axis cylindrical grinding discs can be used. Further, when the inner peripheral surface 2b side is machined, it is preferable to use a vertical axis cylindrical polishing disk because it is less susceptible to gravity and has a surface roughness Ra or an increase in processing accuracy. In particular, when the inner circumferential surface 2b side of the fired body is processed over a length of 500 mm, the vertical axis cylindrical grinding disk is used, and it is advantageous to reduce the surface roughness Ra relatively easily. However, a horizontal axis cylindrical grinding disc may be used for the processing on the inner peripheral surface 2b side, or a polishing apparatus other than the cylindrical grinding disc may be used.

最後,說明有關端面加工步驟。端面加工步驟係加工端面而製作特定之長度之圓筒形靶材2的步驟。端面之加工係可為例如以切斷所形成者,亦可為以切削或研磨所形成者。又,亦可組合切斷或切削及研磨,加工方法無限制。 Finally, the steps related to the end face processing are explained. The end face processing step is a step of processing the end face to produce a cylindrical target 2 of a specific length. The processing of the end faces may be, for example, a person formed by cutting, or may be formed by cutting or grinding. Further, cutting, cutting, and grinding may be combined, and the processing method is not limited.

如此,實施形態之圓筒形靶材2及圓筒形靶1係可進一步抑制濺鍍中之龜裂的發生。 As described above, the cylindrical target 2 and the cylindrical target 1 of the embodiment can further suppress the occurrence of cracks during sputtering.

[實施例] [Examples]

[實施例1] [Example 1]

調配以BET(Brunauer-Emmett-Teller)法所測定之比表面積(BET比表面積)為5m2/g之SnO2粉末10質量%、及BET比表面積為5m2/g之In2O3粉末90質量%,於罐(pot)中藉氧化鋯球粒進行球磨機混合,調製原料粉末。 Formulated determined the BET (Brunauer-Emmett-Teller) specific surface area (BET specific surface area) is 5m 2 / g of SnO 2 powder was 10 mass%, and a BET specific surface area of 5m 2 / g of In 2 O 3 powder of 90 The mass% was mixed in a pot mill by zirconia pellets in a pot to prepare a raw material powder.

於此罐,相對於上述原料粉末100質量%,分別加入0.3質量%之聚乙烯醇、0.2質量%之聚羧酸銨、0.5質量%之聚乙二醇、及50質量%之水,進行球磨機混合而調製漿料。然後,將此漿料供給至噴霧式乾燥裝置,以噴霧器旋轉數14000rpm、入口溫度200℃、出口溫度80℃之條件進行噴霧式乾燥,調製顆粒體。 In this tank, 0.3% by mass of polyvinyl alcohol, 0.2% by mass of ammonium polycarboxylate, 0.5% by mass of polyethylene glycol, and 50% by mass of water are added to 100% by mass of the raw material powder to carry out a ball mill. The slurry was prepared by mixing. Then, this slurry was supplied to a spray drying apparatus, and spray-drying was carried out under the conditions of a sprayer rotation number of 14,000 rpm, an inlet temperature of 200 ° C, and an outlet temperature of 80 ° C to prepare granules.

將此顆粒體押入並填充於具有外徑157mm之圓柱狀的中子(芯棒)的內徑220mm(厚度10mm)、長度450mm之圓筒形狀的氨基甲酸酯橡膠模內,密閉橡膠模後,以800kgf/cm2之壓力進行CIP(冷均壓,Cold Isostatic Pressing)成形,製作圓筒形之成形體。 The granules were placed in a cylindrical urethane rubber mold having an inner diameter of 220 mm (thickness: 10 mm) and a length of 450 mm having a cylindrical neutron (mandrel) having an outer diameter of 157 mm, and the rubber mold was sealed. CIP (Cold Isostatic Pressing) molding was carried out at a pressure of 800 kgf/cm 2 to prepare a cylindrical molded body.

將此成形體以600℃加熱10小時而除去有機成分。昇溫速度設為50℃/h。進一步,燒製經加熱之成形體,製作燒製體。燒製係在氧環境中以燒製溫度1550℃、燒製時間12小時、昇溫速度300℃/h之條件進行。又,降溫速度係將1550℃至800℃設為50℃/h、800℃以下設為30℃/h來進行。所得之燒製體之相對密度為99.8%。 This molded body was heated at 600 ° C for 10 hours to remove organic components. The heating rate was set to 50 ° C / h. Further, the heated molded body is fired to prepare a fired body. The firing was carried out under an oxygen atmosphere at a firing temperature of 1550 ° C, a firing time of 12 hours, and a temperature increase rate of 300 ° C / h. Further, the cooling rate was performed by setting 1550 ° C to 800 ° C to 50 ° C / h and 800 ° C or lower to 30 ° C / h. The resulting fired body had a relative density of 99.8%.

接著,使用橫軸圓筒研磨盤而研磨加工所 得之燒製體。首先,藉由使用#170之磨石的柱塞方向研磨,加工外周面2a側直至燒製體之外徑成為153.2mm之後,藉由使用#170之磨石之柱塞方向研磨,加工內周面2b側直至燒製體之內徑成為134.8mm為止。 Next, the grinding machine is polished using a horizontal axis cylindrical grinding disc. Get the body. First, the outer peripheral surface 2a side was machined by using the grinding direction of the #170 grindstone until the outer diameter of the fired body became 153.2 mm, and the inner peripheral surface 2b was processed by the direction grinding using the #170 grindstone. The side until the inner diameter of the fired body became 134.8 mm.

繼而,藉由橫移方向研磨進行燒製體之內周面2b側之加工。磨石係使用以玻璃化物(vitrified)作為結合劑且磨粒粒度為#600者,以每1道次之磨石的切入量為0.003mm、磨石於圓筒軸方向之移動速度為300mm/min、燒製體之旋轉速度為70rpm來進行研磨。 Then, the inner peripheral surface 2b side of the fired body is processed by the traverse direction grinding. The grindstone is made of vitrified as a binder and has an abrasive grain size of #600. The cut amount per millstone is 0.003 mm, and the moving speed of the grindstone in the cylinder axis direction is 300 mm/ Min, the rotating body was rotated at a speed of 70 rpm.

將上述橫移方向研磨1道次1道次地重複進行直至燒製體之內徑為135mm為止後,以切入量0使磨石朝圓筒軸方向移動之火花散放(spark out)進行2道次(亦即,1次往返)。 The above-described traverse direction was repeated once in one pass, and the inside of the fired body was repeated until the inner diameter of the fired body was 135 mm, and the spark out was moved in the cylinder axis direction by the cut amount of 0. (ie, 1 round trip).

接著,進行燒製體之外周面2a側之加工。於磨石係使用以玻璃化物作為結合劑且磨粒粒度為#600者。每1道次之磨石之切入量為0.002mm、磨石朝圓筒軸方向之移動速度為150mm/min、燒製體之旋轉速度為20rpm,1道次1道次地重複進行加工直至外徑成為153mm為止之後,進行2道次之火花散放。最後,切斷燒製體之兩端而將長度加工成300mm,製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。 Next, the processing of the outer peripheral surface 2a side of the fired body is performed. For the grindstone, a glazing compound was used as the binder and the abrasive grain size was #600. The cutting amount per grindstone is 0.002 mm, the moving speed of the grindstone in the cylinder axis direction is 150 mm/min, and the rotational speed of the fired body is 20 rpm, and the processing is repeated one pass in one pass until the outer diameter becomes After 153 mm, two times of spark discharge was performed. Finally, both ends of the fired body were cut and the length was processed to 300 mm, and a cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm was produced.

準備9根上述之圓筒形靶材2,於外徑133mm、內徑123mm、長度1500mm之鈦製之支撐管3使用In焊料作為接合材4而分別接合3根圓筒形靶材2,製 作3組之圓筒形靶1。各圓筒形靶材2間之間隔(分割部之長度)係設為0.5mm。又,於接合前對圓筒形靶材2之內周面2b使用超音波焊錫進行In焊料之底塗佈。 In the above-mentioned cylindrical target 2, the support tube 3 made of titanium having an outer diameter of 133 mm, an inner diameter of 123 mm, and a length of 1500 mm was bonded to each other using In solder as the bonding material 4, and three cylindrical targets 2 were joined. Three sets of cylindrical targets 1 were made. The interval between the cylindrical targets 2 (the length of the divided portion) is set to 0.5 mm. Moreover, the undercoat of In solder was applied to the inner peripheral surface 2b of the cylindrical target 2 before ultrasonic welding using ultrasonic solder.

[實施例2] [Embodiment 2]

調配BET比表面積為4m2/g之ZnO粉末44.2質量%、BET比表面積為7m2/g之In2O3粉末25.9質量%、及BET比表面積為10m2/g之Ga2O3粉末29.9質量%,在罐中藉氧化鋯球粒進行球磨機混合,調製成原料粉末。 Formulation BET specific surface area of 4m 2 / ZnO powder g of 44.2% by mass, BET specific surface area of 7m 2 / g of In 2 O 3 powder of 25.9 mass%, and a BET specific surface area 2 O 3 powder was 10m 2 / g of Ga 29.9 The mass% was mixed in a tank by a zirconia pellet in a tank to prepare a raw material powder.

於此罐中,相對於上述原料粉末100質量%,分別加入0.3質量%之聚乙烯醇、0.4質量%之聚羧酸銨、1.0質量%之聚乙二醇、50質量%之水,進行球磨機混合,調製成原料粉末。 In this tank, 0.3% by mass of polyvinyl alcohol, 0.4% by mass of ammonium polycarboxylate, 1.0% by mass of polyethylene glycol, and 50% by mass of water are added to 100% by mass of the raw material powder to carry out a ball mill. Mix and prepare into a raw material powder.

然後,以與實施例1同樣之方法進行顆粒體之調製、成形體之作製及源自成形體之有機成分的除去。進一步,以燒製溫度1400℃、燒製時間10小時、昇溫速度300℃/h、降溫速度50℃/h之條件下進行成形體之燒製,製作燒製體。所得之燒製體之相對密度係99.7%。 Then, the preparation of the granules, the production of the molded body, and the removal of the organic component derived from the molded body were carried out in the same manner as in Example 1. Further, the molded body was fired at a firing temperature of 1400 ° C, a firing time of 10 hours, a temperature increase rate of 300 ° C / h, and a temperature drop rate of 50 ° C / h to prepare a fired body. The relative density of the obtained fired body was 99.7%.

而且,與實施例1同樣地進行所得之燒製體之研磨及以切斷所得之圓筒形靶材2之製造以及圓筒形靶材2與支撐管3之接合,製作圓筒形靶1。 Further, in the same manner as in the first embodiment, the obtained fired body was polished, and the cylindrical target 2 obtained by cutting and the cylindrical target 2 were joined to the support tube 3 to prepare a cylindrical target 1. .

[實施例3] [Example 3]

調配BET比表面積為4m2/g之ZnO粉末95質量%、BET比表面積為5m2/g之Al2O3粉末5質量%,於罐中藉氧化鋯球粒進行球磨機混合而調製陶瓷原料粉末。 Formulation BET specific surface area of 4m 2 / g of ZnO powder of 95 mass%, BET specific surface area of 5m 2 / g of Al 2 O 3 powder of 5 mass%, in the tank for ball mill by zirconia pellets to prepare ceramic raw material powder .

於此罐中,相對於上述原料粉末100質量%,分別添加0.3質量%之聚乙烯醇、0.4質量%之聚羧酸銨、1.0質量%之聚乙二醇、及50質量%之水,進行球磨機混合而調製成漿料。 In this tank, 0.3% by mass of polyvinyl alcohol, 0.4% by mass of ammonium polycarboxylate, 1.0% by mass of polyethylene glycol, and 50% by mass of water are added to 100% by mass of the raw material powder, respectively. The ball mill was mixed to prepare a slurry.

然後,以與實施例1同樣之方法,進行顆粒體之調製、成形體之製作及源自成形體之有機成分之除去。進一步,以燒製溫度1400℃、燒製時間10小時、昇溫速度300℃/h、降溫速度50℃/h之條件下進行成形體之燒製,製作燒製體。所得之燒製體之密度為99.9%。 Then, in the same manner as in Example 1, the preparation of the granules, the production of the molded body, and the removal of the organic component derived from the molded body were carried out. Further, the molded body was fired at a firing temperature of 1400 ° C, a firing time of 10 hours, a temperature increase rate of 300 ° C / h, and a temperature drop rate of 50 ° C / h to prepare a fired body. The obtained fired body had a density of 99.9%.

而且,與實施例1同樣地,進行所得之燒製體之研磨及以切斷所得之圓筒形靶材2之製造以及圓筒形靶材2與支撐管3之接合,製作圓筒形靶1。 Further, in the same manner as in the first embodiment, the obtained fired body is polished, and the cylindrical target 2 obtained by cutting and the cylindrical target 2 are joined to the support tube 3 to produce a cylindrical target. 1.

[實施例4] [Example 4]

樣使用橫軸圓筒研磨盤而加工以與實施例1同樣方式所得之燒製體(ITO),製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。首先,藉由使用#170之磨石的柱塞方向研磨,加工外周面2a側直至燒製體之外徑成為153.2mm之後,藉由使用#170之磨石的柱塞方向研磨,加工內周面2b側直至燒製體之內徑成為134.8mm。 A sintered body (ITO) obtained in the same manner as in Example 1 was processed using a horizontal-axis cylindrical grinding disc, and a cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm was produced. First, the outer peripheral surface 2a side was processed by using the grinding direction of the #170 grindstone until the outer diameter of the fired body became 153.2 mm, and the inner circumference was processed by the plunger direction grinding using the #170 grindstone. The inner surface of the surface 2b was up to 134.8 mm from the inner diameter of the fired body.

繼而,藉橫移方向研磨進行燒製體之內周面2b側之加工。於磨石係使用以玻璃化物作為結合劑且磨粒粒度為#1000者,每1道次之磨石之切入量為0.002mm、磨石朝圓筒軸方向之移動速度為300mm/min、燒製體之旋轉速度為70rpm,進行研磨。 Then, the inner peripheral surface 2b side of the fired body is processed by the traverse direction grinding. In the grindstone system, the glazing compound is used as the binder and the abrasive grain size is #1000. The cutting amount per millstone is 0.002 mm, the moving speed of the grindstone in the cylinder axis direction is 300 mm/min, and the fired body is used. The rotation was performed at a rotation speed of 70 rpm.

1道次1道次地重複進行上述橫移方向研磨直至燒製體之內徑成為135mm為止之後,進行2道次之火花散放。 The above-described traverse direction polishing was repeated one pass in one pass until the inner diameter of the fired body was 135 mm, and then the spark discharge was performed twice.

然後,進行燒製體之外周面2a側之加工。於磨石係使用以玻璃化物作為結合劑且磨粒粒度為#600者,每1道次之磨石之切入量為0.002mm、磨石朝圓筒軸方向之移動速度為150mm/min、燒製體之旋轉速度為20rpm,1道次1道次地重複進行加工直至外徑成為153mm為止之後,進行2道次之火花散放。最後,切斷燒製體之兩端加工長度成為300mm,製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。 Then, the processing on the outer peripheral surface 2a side of the fired body is performed. In the grindstone system, the glazing compound is used as the binder and the abrasive grain size is #600. The cutting amount per grindstone is 0.002 mm, the moving speed of the grindstone in the cylinder axis direction is 150 mm/min, and the fired body is used. The rotation speed was 20 rpm, and the machining was repeated one pass in one pass until the outer diameter became 153 mm, and then the spark discharge was performed twice. Finally, the length of both ends of the fired body was cut to 300 mm, and a cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm was produced.

而且,與實施例1同樣地,進行圓筒形靶材2與支撐管3之接合,製作圓筒形靶1。 Further, in the same manner as in the first embodiment, the cylindrical target 2 and the support tube 3 were joined to each other to form a cylindrical target 1.

[實施例5] [Example 5]

除了使用以與實施例2同樣做法所得之燒製體(IGZO)以外,其餘與實施例4同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 4 except that the fired body (IGZO) obtained in the same manner as in Example 2 was used.

[實施例6] [Embodiment 6]

除了使用以與實施例3同樣做法所得之燒製體(AZO)以外,其餘與實施例4同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 4 except that the fired body (AZO) obtained in the same manner as in Example 3 was used.

[實施例7] [Embodiment 7]

與實施例1同樣做法而加工所得之燒製體(ITO),製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。 於外周面2a側之加工係使用橫軸圓筒研磨盤,於內周面2b側之加工係使用縱軸圓筒研磨盤。 The obtained fired body (ITO) was processed in the same manner as in Example 1 to produce a cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm. The horizontal axis cylindrical grinding disc is used for the processing on the outer peripheral surface 2a side, and the vertical axis cylindrical grinding disc is used for the processing on the inner peripheral surface 2b side.

首先,藉由使用#170之磨石的柱塞方向研磨,加工外周面2a側直至燒製體之外徑成為153.2mm之後,藉由使用#170之磨石之柱塞方向研磨,加工內周面2b側直至燒製體之內徑成為134.8mm為止。 First, the outer peripheral surface 2a side was machined by using the grinding direction of the #170 grindstone until the outer diameter of the fired body became 153.2 mm, and the inner peripheral surface 2b was processed by the direction grinding using the #170 grindstone. The side until the inner diameter of the fired body became 134.8 mm.

繼而,藉由橫移方向研磨進行燒製體之內周面2b側之加工。磨石係使用以玻璃化物作為結合劑且磨粒粒度為#600者,以每1道次之磨石的切入量為0.003mm、磨石於圓筒軸方向之移動速度為300mm/min、燒製體之旋轉速度為70rpm來進行研磨。 Then, the inner peripheral surface 2b side of the fired body is processed by the traverse direction grinding. For the grindstone, the glazing compound is used as the binder and the abrasive grain size is #600. The cutting amount per millstone is 0.003 mm, and the moving speed of the grindstone in the cylinder axis direction is 300 mm/min. The body was rotated at a rotation speed of 70 rpm.

將上述橫移方向研磨1道次1道次地重複進行直至燒製體之內徑為135mm為止之後,進行2道次之火花散放。 The above-described traverse direction was repeated once in one pass and then repeated until the inner diameter of the fired body was 135 mm, and then two-times of spark scattering was performed.

接著,進行燒製體之外周面2a側之加工。於磨石係使用以玻璃化物作為結合劑且磨粒粒度為#600者。每1道次之磨石之切入量為0.002mm、磨石朝圓筒軸方向之移動速度為150mm/min、燒製體之旋轉速度為20rpm,1道次1道次地重複進行加工直至外徑成為153mm為止之後,進行2道次之火花散放。最後,切斷燒製體之兩端而將長度加工成300mm,製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。 Next, the processing of the outer peripheral surface 2a side of the fired body is performed. For the grindstone, a glazing compound was used as the binder and the abrasive grain size was #600. The cutting amount per grindstone is 0.002 mm, the moving speed of the grindstone in the cylinder axis direction is 150 mm/min, and the rotational speed of the fired body is 20 rpm, and the processing is repeated one pass in one pass until the outer diameter becomes After 153 mm, two times of spark discharge was performed. Finally, both ends of the fired body were cut and the length was processed to 300 mm, and a cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm was produced.

而且,與實施例1同樣地,進行圓筒形靶材2與支撐管3之接合,製作圓筒形靶1。 Further, in the same manner as in the first embodiment, the cylindrical target 2 and the support tube 3 were joined to each other to form a cylindrical target 1.

[實施例8] [Embodiment 8]

除了使用以與實施例2同樣做法所得之燒製體(IGZO)以外,其餘係與實施例7同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 7 except that the fired body (IGZO) obtained in the same manner as in Example 2 was used.

[實施例9] [Embodiment 9]

除了使用以與實施例2同樣做法所得之燒製體(AZO)以外,其餘係與實施例7同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 7 except that the fired body (AZO) obtained in the same manner as in Example 2 was used.

[實施例10] [Embodiment 10]

除了使研磨燒製體(ITO)之內周面2b側的磨石之磨粒粒度設為#320以外,其餘與實施例1同樣做法而製作圓筒形靶材2及圓筒形靶1。 The cylindrical target 2 and the cylindrical target 1 were produced in the same manner as in Example 1 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the polished body (ITO) was changed to #320.

[實施例11] [Example 11]

除了使研磨燒製體(IGZO)之內周面2b側的磨石之磨粒粒度設為#320以外,其餘係與實施例2同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 2, except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the ground fired body (IGZO) was set to #320. .

[實施例12] [Embodiment 12]

除了使研磨燒製體(AZO)之內周面2b側的磨石之磨粒粒度設為#320以外,其餘係與實施例3同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 3 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the abrasive-fired body (AZO) was changed to #320. .

[實施例13] [Example 13]

除了使研磨燒製體(ITO)之內周面2b側的磨石之磨粒粒度設為#170以外,其餘係與實施例1同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 1 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the polished body (ITO) was set to #170. .

[實施例14] [Embodiment 14]

除了使研磨燒製體(IGZO)之內周面2b側的磨石之磨粒粒度設為#170以外,其餘係與實施例2同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 2 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the IGZO was set to #170. .

[實施例15] [Example 15]

除了使研磨燒製體(AZO)之內周面2b側的磨石之磨粒粒度設為#170以外,其餘係與實施例3同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 3 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the fired fired body (AZO) was changed to #170. .

[實施例16] [Example 16]

除了使研磨燒製體(ITO)之內周面2b側的磨石之磨粒粒度設為#1500以外,其餘係與實施例1同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 1 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the polished body (ITO) was set to #1500. .

[實施例17] [Example 17]

除了使研磨燒製體(IGZO)之內周面2b側的磨石之磨粒粒度設為#1500以外,其餘係與實施例2同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 2 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the IGZO was set to #1500. .

[實施例18] [Embodiment 18]

除了使研磨燒製體(AZO)之內周面2b側的磨石之磨粒粒度設為#1500以外,其餘係與實施例3同樣做法而製作圓筒形靶材2及圓筒形靶1。 A cylindrical target 2 and a cylindrical target 1 were produced in the same manner as in Example 3 except that the abrasive grain size of the grindstone on the inner peripheral surface 2b side of the abrasive-fired body (AZO) was set to #1500. .

[比較例1] [Comparative Example 1]

使用橫軸圓筒研磨盤而加工以與實施例1同樣做法所得之燒製體(ITO),製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。首先,藉由使用#170之磨石的柱 塞方向研磨,加工外徑直至153.2mm之後,藉由使用#170之磨石之柱塞方向研磨,加工內徑至134.8mm為止。 A cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm was produced by using a horizontal axis cylindrical grinding disc to process a fired body (ITO) obtained in the same manner as in the first embodiment. First, by using the #170 millstone column Grinding in the plug direction, after processing the outer diameter up to 153.2 mm, the inner diameter was processed to 134.8 mm by grinding in the direction of the plunger of #石.

繼而,藉由橫移方向研磨進行燒製體之內周面2b側之加工。於磨石係使用以玻璃化物作為結合劑且磨粒粒度為#80者,以每1道次之磨石之切入量為0.005mm、磨石於圓筒軸方向之移動速度為300mm/min、燒製體之旋轉速度為70rpm而進行研磨。 Then, the inner peripheral surface 2b side of the fired body is processed by the traverse direction grinding. In the grindstone system, the glazing compound is used as the binder and the abrasive grain size is #80, the cutting amount per mill pass is 0.005 mm, and the moving speed of the grindstone in the cylinder axis direction is 300 mm/min. The fired body was ground at a rotation speed of 70 rpm.

1道次1道次地重複進行上述橫移方向研磨直至燒製體之內徑成為135mm之後,進行2道次之火花散放。 The above-described traverse direction grinding was repeated one pass in one pass until the inner diameter of the fired body became 135 mm, and then two-stage spark discharge was performed.

接著,進行燒製體之外周面2a側之加工。於磨石係使用以玻璃化物作為結合劑且磨粒粒度為#600者。以每1道次之磨石之切入量為0.002mm、磨石朝圓筒軸方向之移動速度為150mm/min、燒製體之旋轉速度為20rpm,1道次1道次地重複進行加工直至外徑成為153mm為止之後,進行2道次之火花散放。最後,切斷燒製體之兩端而將長度加工成300mm,製造外徑153mm、內徑135mm、長度300mm之圓筒形靶材2。 Next, the processing of the outer peripheral surface 2a side of the fired body is performed. For the grindstone, a glazing compound was used as the binder and the abrasive grain size was #600. The cutting amount per grindstone is 0.002 mm, the moving speed of the grindstone in the direction of the cylinder axis is 150 mm/min, and the rotational speed of the fired body is 20 rpm, and the machining is repeated one pass in one pass to the outer diameter. After 153 mm, the spark discharge was performed twice. Finally, both ends of the fired body were cut and the length was processed to 300 mm, and a cylindrical target 2 having an outer diameter of 153 mm, an inner diameter of 135 mm, and a length of 300 mm was produced.

而且,與實施例1同樣地進行圓筒形靶材2與支撐管3之接合,製作圓筒形靶1。 Further, in the same manner as in the first embodiment, the cylindrical target 2 and the support tube 3 were joined to each other to produce a cylindrical target 1.

[比較例2] [Comparative Example 2]

除了使用以與實施例2同樣做法所得之燒製體(IGZO),與比較例1同樣做法而製作圓筒形靶材2及圓筒形靶1。 The cylindrical target 2 and the cylindrical target 1 were produced in the same manner as in Comparative Example 1, except that the fired body (IGZO) obtained in the same manner as in Example 2 was used.

[比較例3] [Comparative Example 3]

除了使用以與實施例3同樣做法所得之燒製體(AZO),與比較例1同樣做法而製作圓筒形靶材2及圓筒形靶1。 The cylindrical target 2 and the cylindrical target 1 were produced in the same manner as in Comparative Example 1, except that the fired body (AZO) obtained in the same manner as in Example 3 was used.

以目視觀察在實施例1至比較例3所製作之接合後的圓筒形靶1,在全部中看不出龜裂。其次,進行將3根圓筒形靶材2接合於支撐管3之3組圓筒形靶1之濺鍍,使用圓筒形靶材2至使用率80%(質量基準)之後,以目視觀察圓筒形靶材2,確認有無龜裂。濺鍍之條件係基板溫度:100℃、濺鍍壓力:0.2Pa、功率:20KW、靶旋轉數:10rpm。 The bonded cylindrical target 1 produced in each of Examples 1 to 3 was visually observed, and no crack was observed in all of them. Next, sputtering of three sets of cylindrical targets 1 in which three cylindrical targets 2 are joined to the support tube 3 is performed, and after using the cylindrical target 2 to a usage rate of 80% (mass basis), visual observation is performed. The cylindrical target 2 was confirmed to have cracks. The conditions of the sputtering were substrate temperature: 100 ° C, sputtering pressure: 0.2 Pa, power: 20 KW, and number of target rotations: 10 rpm.

將藉由實施例1至比較例3所得之結果表示於表1至表3。又,就圓筒形靶材2而言,在表1中係表示ITO,在表2中係使用IGZO,在表3中係表示AZO。各表中,係表示出外周面2a及內周面2b之表面粗糙度Ra、圓筒形靶材2之偏心以及圓筒形靶材2與接合材4之接合率的數值,係在各9根之圓筒形靶材2的測定值中,表示最小值與最大值者。此處,有關圓筒形靶材2中之各值的定義係表示於下。 The results obtained by Example 1 to Comparative Example 3 are shown in Tables 1 to 3. Further, in the cylindrical target 2, ITO is shown in Table 1, IGZO is used in Table 2, and AZO is shown in Table 3. In each of the tables, the surface roughness Ra of the outer peripheral surface 2a and the inner peripheral surface 2b, the eccentricity of the cylindrical target 2, and the numerical value of the bonding ratio between the cylindrical target 2 and the bonding material 4 are shown in each table. Among the measured values of the cylindrical target 2, the minimum value and the maximum value are shown. Here, the definition of each value in the cylindrical target 2 is shown below.

[內周面、外周面、兩端面之表面粗糙度Ra之測定] [Measurement of surface roughness Ra of inner peripheral surface, outer peripheral surface, and both end faces]

使用表面粗糙度測定器(Surf CoderSE1700/小坂研究所股份有限公司製)而測定圓筒形靶材2之外周面2a、內周面2b、兩端面2c之表面粗糙度Ra。外周面2a與內周面2b 之測定處係在圓筒形靶材2之兩端面2c(亦即,端面2c1,2c2)附近,圓周方向約等間隔各4處(亦即,外周面2a、內周面2b均為8處)。兩端面2c之測定處係將圓筒形靶材2之兩端面2c(亦即,端面2c1,2c2)在圓周方向約等間隔分別設有4處(亦即8處)。所測定之8處之表面粗糙度Ra中,將最大值設為在各面之圓筒形靶材2的表面粗糙度Ra之值。又,在實施例、比較例中之圓筒形靶材2之兩端面2c的表面粗糙度Ra係任一者均為1.4μm以下。 The surface roughness Ra of the outer peripheral surface 2a, the inner peripheral surface 2b, and the both end surfaces 2c of the cylindrical target 2 was measured using the surface roughness measuring device (Surf Coder SE1700 / manufactured by Otaru Laboratory Co., Ltd.). Outer peripheral surface 2a and inner peripheral surface 2b The measurement is in the vicinity of the end faces 2c (i.e., the end faces 2c1, 2c2) of the cylindrical target 2, and the circumferential directions are approximately four at equal intervals (that is, the outer peripheral surface 2a and the inner peripheral surface 2b are 8 places). ). In the measurement of the both end faces 2c, the end faces 2c (i.e., the end faces 2c1, 2c2) of the cylindrical target 2 are respectively provided at four intervals (i.e., eight places) at equal intervals in the circumferential direction. Among the measured surface roughness Ra of the eight points, the maximum value was set to the value of the surface roughness Ra of the cylindrical target 2 on each surface. In addition, in the examples and the comparative examples, the surface roughness Ra of both end faces 2c of the cylindrical target 2 is 1.4 μm or less.

[偏心之測定] [Measurement of eccentricity]

以游標尺任意地測定圓筒形靶材2之端部之厚度,使最厚之處的厚度(最大厚度)與規格厚度(9.00mm)之差設為偏心之測定值。例如,最大厚度為9.10mm時,偏心之值為0.10mm。 The thickness of the end portion of the cylindrical target 2 was arbitrarily measured by a vernier scale, and the difference between the thickness (maximum thickness) at the thickest point and the gauge thickness (9.00 mm) was measured as an eccentricity. For example, when the maximum thickness is 9.10 mm, the value of the eccentricity is 0.10 mm.

[接合率之測定] [Measurement of bonding rate]

使用超音波探傷檢査裝置(SDS-WIN 24235T/KJTD股份有限公司製),以0.5mm節距檢査圓筒形靶材2之內周面2b與接合材4之接合狀態。從所得之圖像,使用圖像解析軟體(粒子解析Ver.3日鐵住金Technology股份有限公司製)而測定接合圓筒形靶材2之內周面2b與接合材4之處的面積,算出相對於內周面2b之面積的比率而設為接合率之值。 The ultrasonic flaw detection apparatus (manufactured by SDS-WIN 24235T/KJTD Co., Ltd.) was used to inspect the joined state of the inner peripheral surface 2b of the cylindrical target 2 and the bonding material 4 at a pitch of 0.5 mm. From the image obtained, the area of the inner peripheral surface 2b of the cylindrical target 2 and the bonding material 4 was measured by using an image analysis software (particle analysis Ver. 3, manufactured by Tiejinjin Technology Co., Ltd.), and the calculation was performed. The value of the joint ratio is set as the ratio of the area of the inner peripheral surface 2b.

進一步之效果或變形例係本發明技術領域中具有通常知識者可容易導出。因此,本發明之更廣範的態樣係並非限定於如以上表示及所記載之特定詳細內容及 代表性的實施形態。因此,不超出附隨之申請專利範圍及依其均等物所定義之總括發明概念的精神或範圍,可為各種變更。 Further effects or modifications can be readily derived by those of ordinary skill in the art. Therefore, the broader aspects of the invention are not limited to the specific details and A representative embodiment. Therefore, various modifications may be made without departing from the spirit and scope of the inventions.

2‧‧‧陶瓷圓筒形靶材(圓筒形靶材) 2‧‧‧Ceramic cylindrical target (cylindrical target)

2a‧‧‧外周面 2a‧‧‧outer surface

2b‧‧‧內周面 2b‧‧‧ inner circumference

3‧‧‧支撐管 3‧‧‧Support tube

3a‧‧‧外周面 3a‧‧‧ outer perimeter

4‧‧‧接合材 4‧‧‧Material

Claims (13)

一種陶瓷圓筒形靶材,其內周面之表面粗糙度Ra為1.2μm以下。 A ceramic cylindrical target having a surface roughness Ra of an inner circumferential surface of 1.2 μm or less. 一種陶瓷圓筒形靶材,其內周面之表面粗糙度Ra為1.0μm以下。 A ceramic cylindrical target having a surface roughness Ra of an inner circumferential surface of 1.0 μm or less. 一種陶瓷圓筒形靶材,其內周面之表面粗糙度Ra為0.8μm以下。 A ceramic cylindrical target having a surface roughness Ra of an inner circumferential surface of 0.8 μm or less. 一種陶瓷圓筒形靶材,其內周面之表面粗糙度Ra為0.5μm以下。 A ceramic cylindrical target having a surface roughness Ra of 0.5 μm or less on the inner peripheral surface thereof. 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,其中,前述表面粗糙度Ra為0.1μm以上。 The ceramic cylindrical target according to any one of claims 1 to 4, wherein the surface roughness Ra is 0.1 μm or more. 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,含有In、Zn、Al、Ga、Zr、Ti、Sn、Mg及Si之中的1種以上。 The ceramic cylindrical target according to any one of claims 1 to 4, which contains one or more of In, Zn, Al, Ga, Zr, Ti, Sn, Mg, and Si. 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,其中,Sn之含量以SnO2換算為1至10質量%之ITO。 The ceramic cylindrical target according to any one of claims 1 to 4, wherein the content of Sn is 1 to 10% by mass of ITO in terms of SnO 2 . 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,其中,In之含量以In2O3換算為10至60質量%,Ga之含量以Ga2O3換算為10至60質量%,Zn之含量以ZnO換算為10至60質量%之IGZO。 The ceramic cylindrical target according to any one of claims 1 to 4, wherein the content of In is 10 to 60% by mass in terms of In 2 O 3 , and the content of Ga is converted in terms of Ga 2 O 3 It is 10 to 60% by mass, and the content of Zn is 10 to 60% by mass of IGZO in terms of ZnO. 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,其中,Al之含量以Al2O3換算為0.1至5質量%之AZO。 The ceramic cylindrical target according to any one of claims 1 to 4, wherein the content of Al is 0.1 to 5% by mass of AZO in terms of Al 2 O 3 . 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,其中,Zn之含量以ZnO換算為1至15質量%之IZO。 The ceramic cylindrical target according to any one of claims 1 to 4, wherein the content of Zn is 1 to 15% by mass of IZO in terms of ZnO. 如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材,其中,內外徑之偏心為0.2mm以下。 The ceramic cylindrical target according to any one of claims 1 to 4, wherein the eccentricity of the inner and outer diameters is 0.2 mm or less. 一種圓筒形濺鍍靶,係具備:如申請專利範圍第1至4項中任一項所述之陶瓷圓筒形靶材;及,圓筒形之基材,其係插通於前述陶瓷圓筒形靶材之中空部分,且外周面經由接合材而接合於前述陶瓷圓筒形靶材之前述內周面。 A cylindrical sputtering target, comprising: the ceramic cylindrical target according to any one of claims 1 to 4; and a cylindrical substrate inserted through the ceramic The hollow portion of the cylindrical target is joined to the inner circumferential surface of the ceramic cylindrical target via a bonding material. 如申請專利範圍第12項所述之圓筒形濺鍍靶,其中,前述陶瓷圓筒形靶材與前述接合材之接合率為98%以上。 The cylindrical sputtering target according to claim 12, wherein a bonding ratio of the ceramic cylindrical target to the bonding material is 98% or more.
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