KR101980465B1 - Sputtering target and method for producing same - Google Patents

Abstract

It is an object of the present invention to reduce the occurrence of arcing during the manufacturing process and to improve the yield of the manufacturing process. The sputtering target includes a plurality of target members made of ceramics joined to a substrate made of a metal through a bonding material composed of a low melting point metal having a melting point of 300 DEG C or lower, Wherein the plurality of target members have a hollow cylindrical shape and have a surface roughness (Ra) of 1.8 占 퐉 or more, wherein when the base member is joined to surround the outer peripheral surface of the base material, , And the surface roughness (Ra) of the circular surface is not less than 2.0 占 퐉 and not more than 8.0 占 퐉.

Description

[0001] SPUTTERING TARGET AND METHOD FOR PRODUCING SAME [0002]

The present invention relates to a sputtering target and a manufacturing method thereof. Particularly, it relates to the surface roughness of the sintered body constituting the target member.

In recent years, as a sputtering apparatus for forming a metal thin film and a thin metal oxide film on a large glass substrate, development of a sputtering apparatus using a cylindrical sputtering target has been continued. The cylindrical sputtering target refers to a sputtering target obtained by processing a sintered body composed of a target portion material into a hollow cylindrical shape and joining it to a substrate called a backing plate or a backing tube.

Such a cylindrical sputtering target has an advantage that the use efficiency of the target is high, the occurrence of an error zone is small, and generation of particles due to separation of the deposit is small as compared with a flat sputtering target. Particularly, the advantage of less occurrence of particles is very advantageous in reducing occurrence of arcing due to redeposition on the target of the particle.

For example, in the case of manufacturing a cylindrical sputtering target for forming ITO (indium tin oxide), a sintered body (ceramics) obtained by mixing and sintering indium oxide powder and tin oxide powder is processed into a hollow cylindrical shape, (Backing tube).

However, it is difficult to manufacture the target member made of ceramics in a long shape. Therefore, in order to increase the length of the cylindrical sputtering target (to make it larger), a plurality of cylindrical sintered bodies are formed, and these are successively joined to the base material to join the cylindrical sputtering target, (Patent Document 1).

When a plurality of target members are arranged without gaps with respect to the base material, the target members may expand and contract due to the heat in the sputterer, and the target members may collide with each other, causing collapse and breakage. Therefore, generally, when a plurality of target members are bonded to a substrate, the target members are spaced apart from each other by a predetermined distance.

[Prior Art Literature]

[Patent Literature]

Patent Document 1: JP-A-7-228967

However, as a result of intensive research conducted by the present inventors, it has been found that when a gap is provided between target members, the thin film is re-deposited by sputtering (phenomenon that the sputtered target component does not reach the substrate and is reattached to the target member) And when it reaches a certain amount, it is found that there is a case where the discharge is carried out in a stable state in a plasma being discharged. As a result, it was found that the dislocation balance in the plasma collapsed, local charge concentration occurred, and incidental arcing occurred.

It is an object of the present invention to provide a sputtering target capable of suppressing occurrence of arcing during sputtering and capable of improving the yield of a device manufacturing process using the sputtering process.

A sputtering target according to an embodiment of the present invention includes a plurality of target members made of ceramic bonded to a substrate made of a metal through a bonding material composed of a low melting point metal having a melting point of 300 캜 or less, The surface roughness Ra of the surface on which the bonding material abuts is 1.8 占 퐉 or more (preferably 1.8 占 퐉 or more and 3.0 占 퐉 or less and more preferably 1.8 占 퐉 or more and 2.5 占 퐉 or less) And has a circular surface opposed to the target member adjacent to each other at a predetermined interval when the substrate is joined so as to surround the outer circumferential surface of the base material, and the surface roughness (Ra) of the circular surface is 2.0 μm or more and 8.0 μm or less.

A method of manufacturing a sputtering target according to an embodiment of the present invention is a method of manufacturing a sputtering target comprising a plurality of hollow cylindrical target members made of ceramics joined to a substrate made of a metal through a bonding material composed of a low- (Ra) of not less than 2.0 占 퐉 and not more than 8.0 占 퐉 so that the surface of the base material on which the bonding material abuts is 1.8 占 퐉 or more (preferably 1.8 占 퐉 or more and 3.0 占 퐉 And more preferably not less than 1.8 占 퐉 and not more than 2.5 占 퐉), and each of the plurality of the target members is arranged so as to surround the outer peripheral surface of the base material, And the target member is bonded to the substrate through the bonding material.

The target member may be formed of ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), or IGZO (Indium-Gallium-Zinc-Oxide).

In addition, the measurement of the surface roughness (Ra) is to be carried out in accordance with the ANSI standard using a non-contact surface roughness measuring instrument. The measurement of the surface roughness is carried out at six positions at intervals of 60 degrees on each cross section of the target member (12 positions relative to one target member), and the weighted average value of all the measured values is taken as the surface roughness of the target member.

1 is a perspective view showing a configuration of a sputtering target according to an embodiment of the present invention.
2 is a cross-sectional view showing a configuration of a sputtering target according to an embodiment of the present invention.
3 is a cross-sectional view showing a vicinity of a gap between target members in a sputtering target according to an embodiment of the present invention.
4 is a process flow diagram showing a method of manufacturing a sputtering target according to an embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like. It should be noted, however, that the present invention can be carried out in various forms without departing from the gist of the present invention, and is not limited to the description of the embodiments described below.

For the sake of clarity, the drawings are schematically illustrated with respect to the width, thickness, shape and the like of the respective parts in comparison with the actual shapes, but they are merely examples and do not limit the interpretation of the present invention . In the drawings, the same reference numerals are given to elements having the same functions as those described with reference to the drawings, and duplicate explanations are omitted.

<Configuration of Sputtering Target>

1 is a perspective view showing a configuration of a sputtering target according to an embodiment of the present invention. 2 is a cross-sectional view showing a configuration of a sputtering target according to an embodiment of the present invention.

In the present embodiment, a cylindrical sputtering target is exemplified. The cylindrical sputtering target 100 according to this embodiment comprises a substrate 101 and a plurality of target members 102a and 102b. Each of the target members 102a and 102b is bonded to the substrate 101 via the bonding material 103. [ At this time, the bonding material 103 is provided so as to fill a gap provided between the substrate 101 and the target members 102a and 102b.

The sputtering target 100 according to the present embodiment is characterized by a sintered body constituting a plurality of target members 102a and 102b. Specifically, the target members 102a and 102b each have a circular surface 104 opposed to the adjacent target member at a predetermined interval, and the surface roughness Ra of the circular surface 104 is 2.0 μm or more. This point will be described later.

The plurality of target members 102a, 102b are provided so as to surround the outer peripheral surface of the substrate 101. [ The plurality of target members 102a and 102b are preferably coaxial or substantially coaxial with respect to the central axis of the substrate 101. [ With this configuration, when the cylindrical sputtering target 100 is mounted on the sputtering apparatus and rotated around the substrate 101, the gap between the target members 102a and 102b and the surface to be coated (sample substrate) can be kept constant.

In the cylindrical sputtering target 100, when the plurality of cylindrical sputtering target members 102a and 102b are mounted on the substrate 101, the respective target members 102a and 102b are arranged at predetermined intervals. The gap may be less than or equal to 1 mm, and may be, for example, between 0.1 and 0.5 mm. By disposing the plurality of target members 102a and 102b at a predetermined interval in this manner, it is possible to prevent breakage due to collision between the target members.

In the cylindrical sputtering target 100 of the present embodiment, a plurality of target members 102 are bonded to the base material 101 with the bonding material 103, and a sputtering target having a length of 100 mm or longer can be formed.

<Description>

It is preferable that the substrate 101 has an outer surface shape that conforms to the inner surface of the hollow cylindrical target members 102a and 102b. As described above, the outer diameter of the base material 101 is adjusted to be slightly smaller than the inner diameters of the target members 102a and 102b, and the gap is adjusted so as to coexist when they are coaxially overlapped. A bonding material 103 is provided in such a gap.

Each of the target members 102a and 102b is heated by ion irradiation at the time of film formation by sputtering, and the temperature rises. In order to suppress the temperature rise of the target members 102a and 102b during film formation by sputtering, it is preferable that the substrate 101 functions as a coolant (heat sink) for the target members 102a and 102b. For example, the substrate 101 may be configured to have a hollow structure and to allow a refrigerant to flow therein. Therefore, as the substrate 101, it is preferable to use a material having good conductivity and thermal conductivity.

At the same time, the substrate 101 is preferably made of a metal that has a good wetting property with the bonding material 103 and can achieve high bonding strength. From the above, it is preferable to use copper (Cu) or titanium (Ti), a copper alloy, a titanium alloy, or stainless steel (SUS), for example, as a material constituting the substrate 101. As the copper alloy, an alloy containing copper (Cu) as a main component such as chromium copper can be applied. Further, when titanium (Ti) is used as the substrate 101, it is possible to make a substrate having a light weight and rigidity.

The substrate 101 is not only formed of a single metal or a metal alloy, but also a film made of another metal may be provided on the surface of the metal substrate. For example, a metal film containing titanium (Ti), copper (Cu), silver (Ag), nickel (Ni), or the like may be formed.

In the cylindrical sputtering target 100, ions are not irradiated on the entire surfaces of the target members 102a and 102b during sputtering, but only a part of the surfaces are rotated while being irradiated with ions. In the same target member, A temperature difference is generated. However, since the substrate 101 has a cooling function, the temperature rise of the target members 102a and 102b can be suppressed, and the influence of thermal deformation due to the temperature difference can be suppressed.

In the case of the cylindrical sputtering target, the molten bonding material 103 is injected into the space between the substrate 101 and the target members 102a and 102b, and then solidified through a cooling process, thereby joining the both. Therefore, since the substrate 101 is inserted into the hollow portion of the hollow cylindrical target members 102a, 102b, the space between the substrate 101 and the target members 102a, 102b can be adjusted in the bonding process none. Therefore, it is preferable that the substrate 101 be provided with an anchor effect on the bonding material 103, since the adhesion of the bonding surface between the base material 101 and the bonding material 103 may be impaired by the volume contraction accompanying solidification of the bonding material 103.

For this purpose, it is preferable that the substrate 101 has a roughened surface side in contact with the bonding material 103. By making the surface of the substrate 101 roughened, the surface area in contact with the bonding material 103 can be increased, and the adhesion between the substrate 101 and the bonding material 103 can be enhanced. For example, the surface of the substrate 101 can be roughened by sandblasting or the like.

In addition, it can be said that the larger the value of the surface roughness (Ra) of the surface of the substrate 101 is, the higher the surface area is, and thus the adhesion is increased. However, the surface of the substrate 101 is not excessively roughened in the gap between the target members 102a and 102b . When the surface of the substrate 101 is roughened in the gap, there is an advantage in that the particles generated in the gap are strongly adhered to prevent re-peeling. On the other hand, if the surface is excessively roughened, the substrate 101 itself is sputtered, The components of the substrate 101 may become impurities in the film, and particles may be generated to cause an abnormal discharge.

Therefore, in the present embodiment, the surface roughness (Ra) of the surface of the substrate 101 on which the bonding material 103 is in contact is 1.8 μm or more (preferably 1.8 μm or more and 3.0 μm or less, more preferably 1.8 μm or more and 2.5 μm or less ). In order to improve the adhesion between the substrate 101 and the bonding material 103, it is preferable that the surface roughness (Ra) of the surface of the substrate 101 on which the bonding material 103 is brought into contact is 1.8 μm or more. In order to suppress sputtering of the substrate 101, (more preferably, 2.5 mu m).

<Bonding material>

The bonding material 103 is provided between the substrate 101 and the target members 102a and 102b. The bonding material 103 is preferably bonded to the base material 101 and the target members 102a and 102b, and has good heat resistance and thermal conductivity. Further, since it is placed under vacuum during the sputtering, it is preferable that it has a characteristic that the gas emission is little in vacuum.

Further, from the manufacturing viewpoint, it is preferable that the bonding material 103 has fluidity when bonding the base material 101 and the respective target members 102a, 102b. In order to satisfy such a characteristic, as the bonding material 103, a low melting point metal material having a melting point of 300 DEG C or less can be used. For example, as the bonding material 103, a metal such as indium or tin or a metal alloy material containing any one of these elements may be used. Specifically, indium or tin alloy, indium-tin alloy, tin-based solder alloy, or the like can be used.

&Lt; Target member &

As shown in Figs. 1 and 2, each of the target members 102a and 102b is formed into a hollow cylindrical shape. Each of the target members 102a, 102b has a thickness of at least several millimeters to several tens of millimeters, and the entire thickness portion can be used as a target member.

When the target members 102a and 102b are mounted on the substrate 101, the substrate 101 is inserted into the hollow portions of the target members 102a and 102b, and then they are bonded together by the bonding material 103. [ That is, the outer diameter of the base 101 is smaller than the inner diameter (diameter of the hollow portion) of each of the target members 102a and 102b, and they are arranged with a predetermined gap therebetween and the bonding material 103 is provided to fill the gap. In order to stably hold each of the target members 102a, 102b and the substrate 101, there is no gap in the bonding material 103 in the gap.

Each of the target members 102a and 102b has a cylindrical outer surface serving as a target surface and a cylindrical inner surface serving as a surface contacting the bonding material 103 toward the substrate 101. [ Therefore, at the time of manufacturing, the outer surfaces of the target members 102a and 102b are smoothly formed and the inner surface of the cylinder can be roughened to improve the adhesiveness.

Each of the target members 102a and 102b is formed using various materials capable of forming a sputtering film. For example, the target members 102a, 102b may be ceramic. As the ceramics, a metal oxide, a metal nitride, a sintered body of a metal oxynitride, or the like can be used. As the metal oxide, an oxide of a metal belonging to a typical element such as indium oxide, tin oxide, zinc oxide, or gallium oxide can be used.

Specifically, a compound of tin oxide and indium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), indium oxide, zinc oxide and oxide A sintered body of a compound selected from indium gallium zinc oxide (IGZO), or the like can be used as the target members 102a and 102b.

Incidentally, the above specific example is merely an example. In the sputtering target according to the present embodiment, various sputtering materials can be used as the target member.

Here, between the target member 102a and the target member 102b, a gap of a predetermined distance (preferably 1 mm or less, for example, 0.1 to 0.5 mm) is provided. This gap is a safety measure for preventing the target members from colliding with each other, but as described above, the present inventors have found that the thin film re-deposited on the gap leads to arcing.

Therefore, the inventors of the present invention have found that the surface roughness of the surface on which the target member 102a and the target member 102b face (that is, the circular surface 104 shown in Figs. 1 and 2) is 2.0 μm or more and 8.0 μm or less , And more preferably not less than 3.0 袖 m and not more than 8.0 袖 m), it is possible to suppress occurrence of arcing. That is, in the sputtering target 100 according to the present embodiment, the surface roughness of the surface on which the target member 102a and the target member 102b are opposed is 2.0 μm or more and 8.0 μm or less.

3 is a cross-sectional view showing a vicinity of a gap between adjacent target members. Specifically, FIG. 2 shows a schematic diagram in which the inside of a frame line denoted by reference numeral 105 is enlarged. As shown in Fig. 3, a gap of 0.2 to 0.5 mm is provided between the target member 102a and the target member 102b, and the surface 104 to which the target members are opposed is intentionally worked so as to roughen the surface. That is, each of the target members 102a, 102b has a circular surface 104 opposed to the target member adjacent to each other at a predetermined interval when bonded to the substrate 101, and the surface roughness Ra of the circular surface 104 is 2.0 m Or more and 8.0 占 퐉 or less.

According to research conducted by the present inventors, occurrence of arcing was confirmed in the range where the surface roughness (Ra) of the circular surface 104 of each of the target members 102a, 102b was less than 2.0 占 퐉. When the surface roughness (Ra) exceeded 8.0 탆, arcing again was confirmed, and the collapse of the target member was further confirmed.

The reason for suppressing the occurrence of arcing when the surface roughness Ra is 2.0 m or more is that the surface is roughened and the surface area of the circular surface 104 is increased and the adhesion of the redeposited film is strengthened so that the plasma caused by peeling of the redeposited film The abnormal discharge of the discharge cell is reduced. Therefore, it can be said that it is preferable to set the surface roughness (Ra) to not less than 2.5 占 퐉 (more preferably not less than 3.0 占 퐉) from the viewpoint of strengthening the adhesion of the redeposited film.

On the contrary, it is considered that the cause of occurrence of arcing and collapse when the surface roughness (Ra) exceeds 8.0 占 퐉 is considered to be the damage which is caused during the grinding process to have a surface roughness of 8.0 占 퐉 or more. That is, in order to obtain a surface roughness of 8.0 占 퐉 or more, it is necessary to perform grinding with a grinding wheel of coarse yarn, or to subject the abrasive grains to a high pressure to be processed (bevel blasting) As a result, it is considered that the processing damage (fine cracks, etc.) remains at the end portion of the target member, and the damage is extended to lead to collapse.

As described above, in the sputtering target 100 according to the present embodiment, the surface roughness (Ra) of the circular surface 104 in each of the target members 102a, 102b is 2.0 μm or more and 8.0 μm or less (preferably 2.5 μm or more and 8.0 μm or less , More preferably not less than 3.0 μm and not more than 8.0 μm), it is possible to suppress arcing of the whole sputtering. As a result, the yield of the device manufacturing process using the sputtering process can be improved.

&Lt; Sputtering target production method >

Next, a manufacturing method of the sputtering target 100 according to the present embodiment will be described in detail. 4 is a process flow chart showing a manufacturing method of the sputtering target 100 according to an embodiment of the present invention.

In the present embodiment, an example in which the indium tin oxide (ITO) sintered body is used as the target members 102a and 102b is shown, but the material of the sintered body is not limited to ITO but IZO, IGZO and other metal oxide compounds can be used.

First, raw materials constituting the target members 102a and 102b are prepared. In this embodiment, a powder of indium oxide and a powder of tin oxide are prepared (S401, S402). The purity of such a raw material may be usually 2N (99 mass%) or more, preferably 3 N (99.9 mass%) or more, and still more preferably 4 N (99.99 mass%) or more. If the purity is lower than 2N, impurities are contained in the target members 102a and 102b so that desired physical properties can not be obtained (for example, decrease in transmittance of the formed thin film, increase in resistance value, generation of particles due to arcing) The problem may arise.

Next, powder of the raw material is pulverized and mixed (S403). The pulverization and mixing treatment of the powder of the raw material may be performed by a dry method using balls and beads (so-called medium) such as zirconia, alumina or nylon resin, a medium agitating mill using the balls and beads, or by a wet method such as a medialess vessel rotary milling, a mechanical agitating milling, or an air flow milling. In general, the wet method is superior to the dry method in crushing and mixing ability, and therefore, it is preferable to carry out mixing using a wet method.

The composition of the raw material is not particularly limited, but it is preferable to adjust it appropriately according to the composition ratio of the target members 102a, 102b. When it is desired to further reduce the crystal grain size of the powder of the raw material, the powders of the respective raw materials may be pulverized in advance before mixing and may be simultaneously pulverized in the powder processing at the time of mixing.

In addition, by using a powder having a fine particle diameter, high density of the sintered body to be the target members 102a and 102b can be achieved. It is possible to obtain a fine powder by strengthening the pulverization conditions. However, the amount of the medium (zirconia or the like) used in the pulverization is also increased, and the impurity concentration in the target members 102a, 102b may increase. As described above, it is necessary to optimize the grinding conditions while observing the high density of the sintered body and the balance of the impurity concentrations in the target members 102a and 102b.

Next, the slurry of the raw material powder is dried and assembled (S404). At this time, the slurry can be rapidly dried using rapid dry assembly. Rapid dry assembly can be carried out by adjusting the temperature and air volume of hot air using a spray dryer. By using the rapid dry assembly, the separation of the indium oxide powder and the tin oxide powder can be suppressed in accordance with the difference in sedimentation speed due to the difference in the specific gravity of the powder of the raw material. By this assembly, the proportion of the compounding ingredients is made uniform, and the handling property of the raw material powder is improved. Further, plasticity can be performed before and after the assembly.

Next, a cylindrical molded body is formed by press-molding the mixture obtained by mixing and assembling described above (plasticized when plasticity is provided) (S405). By such a process, it is molded into a shape very suitable for the intended target members 102a, 102b. The molding process may be, for example, mold molding, injection molding, injection molding or the like. However, in order to obtain a complicated shape such as a cylindrical shape, it is preferable to form it by cold isostatic pressing (CIP) or the like.

In molding by CIP, the raw material weighed at a predetermined weight is first charged into a rubber mold. At this time, by filling the rubber mold while swinging or tapping, filling unevenness and voids of the raw material in the rubber mold can be eliminated. The molding pressure by the CIP can be appropriately set depending on the density required for the target members 102a and 102b.

Next, the cylindrical formed body obtained in the forming step is sintered (S406). Electric furnaces are used for sintering. The sintering conditions can be appropriately selected depending on the composition of the sintered body. For example, ITO containing 10 wt% SnO ₂ can be sintered in an oxygen gas atmosphere at a temperature of 1500 to 1600 캜 for 10 to 26 hours. When the sintering temperature is less than 1500 degrees, the density of the target members 102a and 102b is lowered. On the other hand, if it exceeds 1600 degrees, the damage to the electric furnace or the furnace becomes large, and maintenance is required frequently, so that the working efficiency remarkably decreases. If the sintering time is less than 10 hours, the density of the target is lowered. If the sintering time is longer than 26 hours, the tact time is prolonged and the manufacturing cost is increased. The sintering pressure may be atmospheric pressure, or may be a reduced pressure or pressurized atmosphere.

Here, in the case of sintering in an electric furnace, the occurrence of cracks can be suppressed by adjusting the heating rate and the temperature-decreasing rate of sintering. Concretely, the heating rate of the electric furnace at sintering is preferably 300 ° C / hour or less, and more preferably 180 ° C / hour or less. It is preferable that the temperature decreasing rate of the electric furnace at sintering is 5 DEG C / hour or less. In addition, the heating rate or the temperature lowering rate may be adjusted to change stepwise.

The cylindrical shaped body is shrunk by sintering, but temperature holding (holding) is carried out during the temperature rise in order to make the temperature in the furnace uniform before entering the temperature region in which the heat shrinkage starts in common with all the materials. As a result, temperature unevenness in the furnace is eliminated, and all the sintered bodies provided in the furnace shrink uniformly. The sintered body having a uniform temperature can be obtained by setting appropriate conditions for the material temperature and the holding time.

Next, the formed cylindrical sintered body is machined into a desired cylindrical shape using a machining machine such as a plane grinding machine, a circular grinding machine, a lathe, a cutter, or a machining center (S407). The machining here is a step of machining the cylindrical sintered body so as to have a desired shape and surface roughness. Finally, the target members 102a and 102b are formed through such a process.

As for the outer surface (sputtered surface) of the target members 102a and 102b, the surface roughness Ra is preferably set to 0.5 μm or less. This can reduce the risk that an electric field concentrates on the protrusions during sputtering, and abnormal discharge occurs.

Further, in the present embodiment, the round surface 104 of the target members 102a and 102b is subjected to grinding using a grindstone or by machining using a beads blast, so that the surface roughness Ra of the circular surface 104 is set to 2.0 μm Or more and 8.0 占 퐉 or less. For example, the surface roughness can be set within the range of 2.0 占 퐉 to 8.0 占 퐉 by grinding with a coarse number of grinders such as # 40 and # 20, or by bevel-blasting.

Next, the machined cylindrical sintered body (i.e., the target members 102a and 102b) is bonded to the substrate 101 (S408). Particularly, in the case of the cylindrical sputtering target 100, the target members 102a and 102b are bonded to a cylindrical substrate 101 called a backing tube with the bonding material 103 as an adhesive, as shown in Figs. Specifically, the substrate 101 is inserted into the hollow portion of the hollow cylindrical target members 102a and 102b, the molten bonding material 103 is injected into the space between the substrate 101 and the target members 102a and 102b, And solidification is carried out, thereby joining the both. By the above process, the cylindrical sputtering target 100 according to the present embodiment can be obtained.

[Example]

The present inventors produced target members using three different materials (ITO, IZO and IGZO), and investigated the relationship between the surface roughness and the occurrence of arcing and collapse for each of them. The results are shown in Tables 1 to 3 Respectively. Incidentally, each experimental condition was a target thickness of 9 mm, a sputtering pressure of 0.6 Pa, an Ar (argon) flow rate of 300 sccm, an input power of 4 kW / m, and a sputtering time of 24 hours. In order to evaluate the target durability when the continuous discharge was performed, discharging was performed without setting the substrate and the like. In addition, the surface roughness (Ra) is measured in accordance with the ANSI standard using a small surface roughness meter (Surf test SJ-301 manufactured by Mitsutoyo Corporation). The measurement of the surface roughness was carried out at six positions at intervals of 60 DEG for each cross section of the target member (12 locations for one target member), and the weighted average value of all the measured values was taken as the surface roughness of the target member.

<For ITO> Surface roughness Ra (μm) Arcing occurs Occurrence of collapse Example 1 2.1 radish radish Example 2 2.4 radish radish Example 3 6.2 radish radish Comparative Example 1 1.2 U radish Comparative Example 2 1.5 U radish Comparative Example 3 1.8 U radish Comparative Example 4 8.2 U U Comparative Example 5 8.6 U U Comparative Example 6 9.1 U U

<For IZO> Surface roughness Ra (μm) Arcing occurs Occurrence of collapse Example 1 2.1 radish radish Example 2 3.5 radish radish Example 3 6.8 radish radish Comparative Example 1 1.3 U radish Comparative Example 2 1.6 U radish Comparative Example 3 1.9 U radish Comparative Example 4 8.1 U U Comparative Example 5 8.4 U U Comparative Example 6 8.9 U U

<For IGZO> Surface roughness Ra (μm) Arcing occurs Occurrence of collapse Example 1 2.2 radish radish Example 2 5.0 radish radish Example 3 7.7 radish radish Comparative Example 1 1.2 U radish Comparative Example 2 1.5 U radish Comparative Example 3 1.7 U radish Comparative Example 4 8.2 U U Comparative Example 5 8.5 U U Comparative Example 6 9.3 U U

As described above, according to the experiment of the present invention, in the plurality of target members constituting the cylindrical sputtering target, the surface roughness (Ra) of the circular surface of each target member is 2.0 μm or more and 8.0 μm or less 8.0 탆 or less, and more preferably 3.0 탆 or more and 8.0 탆 or less), it is possible to suppress the collapse of the target while reducing the occurrence of arcing in the entire sputtering.

The embodiments described above as the embodiments of the present invention can be appropriately combined as long as they do not contradict each other. It is also possible for a person skilled in the art to perform addition, deletion, or design modification of appropriate components, or to add, omit, or change conditions of the processes based on the display device of each embodiment, Are included in the scope of the present invention.

It is to be understood that the present invention is not limited to the above-described embodiments, and the present invention is not limited to the above-described embodiments. &Lt; / RTI &gt;

100: Cylindrical sputtering target
101: substrate
102a, 102b: target member
103: Bonding material
104: Circular surface
105: Border line
S401: Step of preparing indium oxide powder
S402: Step of preparing tin oxide powder
S403: Crushing and mixing raw material powder
S404: Step of drying and assembling slurry of powder of raw material
S405: Step of forming a cylindrical shaped article
S406: a step of sintering a cylindrical shaped body
S407: Process of machining a cylinder into a desired shape
S408: Step of bonding a cylindrical sintered body to a substrate

Claims (10)

And a plurality of target members made of ceramics joined to a substrate made of a metal through a bonding material composed of a low melting point metal having a melting point of 300 DEG C or lower,
The surface roughness (Ra) of the base material on the side in contact with the bonding material is not less than 1.8 μm and not more than 3.0 μm,
Wherein the plurality of target members are hollow cylindrically shaped and at the same time the inner surface in contact with the bonding material is roughened as compared with the outer surface to be sputtered, and when the base member is joined to surround the outer peripheral surface of the base material, Having circular faces opposing each other at a predetermined interval,
And the surface roughness (Ra) of the circular surface is not less than 2.0 占 퐉 and not more than 8.0 占 퐉. delete The method according to claim 1,
Wherein the plurality of target members are made of ITO (Indium-Tin-Oxide). The method according to claim 1,
Wherein the plurality of target members are made of IZO (Indium-Zinc-Oxide). The method according to claim 1,
Wherein the plurality of target members are made of IGZO (Indium-Gallium-Zinc-Oxide). A surface of a base material made of a metal and having a melting point of not higher than 300 캜 and contacting with a bonding material is roughened so that the surface roughness (Ra) is not less than 1.8 탆 and not more than 3.0 탆,
The circular surface of a plurality of hollow cylindrical target members made of ceramic is polished so as to have a surface roughness Ra of not less than 2.0 m and not more than 8.0 m and an inner surface of the target member in contact with the bonding material is sputtered The outer surface is roughened,
Characterized in that the plurality of target members are bonded to the base material through the bonding material so that the circular surfaces face each other at a predetermined interval from adjacent target members and surround the roughened surface of the base material. A method of manufacturing a sputtering target. delete The method according to claim 6,
Wherein the plurality of target members are made of ITO (Indium-Tin-Oxide). The method according to claim 6,
Wherein the plurality of target members are made of IZO (Indium-Zinc-Oxide). The method according to claim 6,
Wherein the plurality of target members are made of IGZO (Indium-Gallium-Zinc-Oxide).

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