CN105917022A - Method for manufacturing target material for sputtering target and claw member - Google Patents

Method for manufacturing target material for sputtering target and claw member Download PDF

Info

Publication number
CN105917022A
CN105917022A CN201580004891.0A CN201580004891A CN105917022A CN 105917022 A CN105917022 A CN 105917022A CN 201580004891 A CN201580004891 A CN 201580004891A CN 105917022 A CN105917022 A CN 105917022A
Authority
CN
China
Prior art keywords
pottery
tubular
tubular pottery
bearing claw
described tubular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580004891.0A
Other languages
Chinese (zh)
Inventor
柴尾正则
寺村享祐
武内朋哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Mining and Smelting Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Publication of CN105917022A publication Critical patent/CN105917022A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B5/00Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
    • B24B5/18Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centreless means for supporting, guiding, floating or rotating work
    • B24B5/22Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centreless means for supporting, guiding, floating or rotating work for grinding cylindrical surfaces, e.g. on bolts
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/001Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • C04B38/008Bodies obtained by assembling separate elements having such a configuration that the final product is porous or by spirally winding one or more corrugated sheets
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]

Abstract

A method for manufacturing target material for a sputtering target according to an embodiment includes a step for inserting three or more support claws into a hollow part of cylindrical ceramics with a total length of 500 mm or more up to a length of 10% or more of the total length of the cylindrical ceramics, a step for supporting the cylindrical ceramics by making the three or more support claws each come into contact with the inner peripheral surface of the cylindrical ceramics, and a step for processing the outer peripheral surface of the cylindrical ceramics by rotating the cylindrical ceramics that has been supported by the three or more support claws in the circumferential direction of the cylindrical ceramics. The three or more support claws are coated by a hard rubber.

Description

The manufacture method of target material for sputtering target and tine
Technical field
The present invention relates to manufacture method and the tine of target material for sputtering target.
Background technology
Known a kind of magnetron type rotating cathode sputter equipment, it has magnetic field and occurs in the inner side of cylindrical shape target Device, cools down from inner side to this target, and then makes the rotation of this target sputter.This In sputter equipment, whole of the outer surface of target is etched equably for etched area.Accordingly, with respect to Service efficiency is the existing flat magnetic control sputtering device of 20~30%, magnetron type rotating cathode sputtering dress Put the highest service efficiency being obtained in that more than 70%.
Additionally, in magnetron type rotating cathode sputter equipment, make cylindrical shape target rotate and spatter Penetrate, therefore can put into bigger power at per unit area compared with flat magnetic controlled tube sputtering apparatus, so Higher film forming speed can be obtained.
This rotating cathode sputtering mode is readily processible to drum and the high metal system of mechanical strength because using Target and widely available.On the other hand, to have mechanical strength compared with metal target low and crisp for ceramic target Such characteristic, is processed into drum and is not easy to.
In recent years, the glass substrate used in flat faced display, solaode becomes to maximize, in order at this It is efficiently formed thin film on maximization substrate, needs such as more than 3m such strip cylindrical target.Therefore, structure The length becoming the cylindrical shape target of cylindrical target is also required to lengthen further.
A kind of known method, when processing tubular pottery and making cylindrical shape target, fixes the one of this tubular pottery End, makes the line rotation centered by Cylindorical rod of tubular pottery carry out grinding, adjust the internal diameter of target with And the size (for example, referring to patent documentation 1) of external diameter.
Patent documentation 1: Japanese Unexamined Patent Publication 2011-177889 publication
Summary of the invention
But, in the above prior art when the tubular pottery that processing length is more than 500mm, however it remains Produce cracking, the probability of deformation, therefore there is further room for improvement.
A kind of mode of embodiment completes in view of foregoing, and it provides a kind of target material for sputtering target Manufacture method and tine, the total length of the tubular processed if any pottery is more than 500mm, it is also possible to suppression Cracking, the generation of deformation.
The manufacture method of the target material for sputtering target that embodiment relates to, including: it is the cylinder of more than 500mm in total length In the hollow bulb of shape pottery, the bearing claw of more than three is inserted into more than the 10% of the ceramic total length of above-mentioned tubular The operation of the degree of depth;The bearing claw of more than the above three inner peripheral surface respectively with above-mentioned tubular pottery is made to abut, Support the operation of above-mentioned tubular pottery;And make the above-mentioned tubular pottery that the bearing claw more than by above three supports Along rotating in a circumferential direction of above-mentioned tubular pottery, process the operation of the outer peripheral face of above-mentioned tubular pottery.More than three Bearing claw is coated with by vulcanie.
A kind of mode according to embodiment, using the teaching of the invention it is possible to provide the manufacture method of a kind of target material for sputtering target and claw Part, the total length of the tubular processed if any pottery is more than 500mm, it is also possible to suppression cracking, the generation of deformation.
Accompanying drawing explanation
Fig. 1 is the explanatory diagram of the summary of the manufacture method of the target material for sputtering target representing that embodiment relates to.
Fig. 2 is the A-A ' profile of Fig. 1.
Fig. 3 is the flow chart of an example of the manufacture method of the target material for sputtering target representing that embodiment relates to.
Symbol description
1 tubular pottery (sintered body)
2 supporting masses
2a tine
2a1,2a2,2a3 bearing claw
3 emery wheels
4 prevent vibration tong
5 inner peripheral surfaces
6 outer peripheral faces
7 hollow bulbs
Detailed description of the invention
Hereinafter, referring to the drawings, manufacture method and the reality of tine to target material for sputtering target disclosed by the invention The mode of executing is described in detail.It addition, the present invention is not limited to embodiment shown below.
First, using Fig. 1, Fig. 2, the summary of the manufacture method of the target material for sputtering target relating to embodiment is entered Row explanation.Fig. 1 is the explanatory diagram of the summary of the manufacture method of the target material for sputtering target representing that embodiment relates to, Fig. 2 is the A-A ' profile of Fig. 1.
As depicted in figs. 1 and 2, tubular pottery 1 is shaped to the tubular with hollow bulb 7.It addition, in FIG, In order to make it easy to understand, only tubular pottery 1 is represented with profile.First target material for sputtering target is below described One example of manufacture method.
Tubular pottery 1 is made through following operation: to the slurry containing ceramic material powder and organic additive Material carries out pelletize to make the granulating working procedure of granule;Make this granule molding to make the one-tenth of the molded body of tubular Type operation;And fire this molded body to make the firing process of sintered body.It addition, the manufacture method of sintered body It is not limited to above-mentioned steps, it is also possible to be any method.
To the sintered body so produced, the manufacture method of the target material for sputtering target related to by embodiment is carried out Processing.After, there is the symbol as ceramic with tubular to this sintered body mark 1 and said as sintered body 1 Bright situation.It addition, tubular pottery 1 can also be that the sintered body being fired into such as column is carried out machining And form the pottery of tubular.
Additionally, in the case of processing tubular pottery 1 makes target material for sputtering target, as Ceramic Material, energy Enough exemplify ITO (In2O3-SnO2)、IGZO(In2O3-Ga2O3-ZnO) and AZO (Al2O3-ZnO) Deng, but it is not limited to this.
The tubular pottery 1 that the manufacture method of the target material for sputtering target that embodiment relates to is applicable to so to produce Total length is the situation of more than 500mm, more preferably more than 600mm.If the total length of tubular pottery 1 is less than 500mm, even if then without this manufacture method, tubular pottery 1 is not easy to produce cracking, deformation.But, this Manufacture method does not hinder the tubular pottery 1 being less than 500mm for total length.Additionally, higher limit is not exposed to spy Do not limit, but preferably below 4000mm.
Additionally, the density of tubular pottery 1 is 5.0g/cm3Above, preferably 5.0g/cm3Above 8.0g/cm3Below.As Really the density of tubular pottery 1 is less than 5.0g/cm3, then because the quality of such as tubular pottery 1 self is less, even if Without this manufacture method, tubular pottery 1 is not easy to produce cracking, deformation.But, this manufacture method also might as well Hinder for density less than 5.0g/cm3Tubular pottery 1.
Here, the density of tubular pottery 1 measures based on Archimedes method.Specifically, it is to make tubular pottery 1 The value that obtains divided by volume (in the water of=tubular pottery 1 water proportion) at a temperature of weight/measuring and calculating of aerial weight.
And, the rupture strength of tubular pottery 1 is below 250MPa, preferably more than 30MPa below 250MPa. If the rupture strength of tubular pottery 1 is less than 30MPa, then may intensity too low thus processing becomes difficulty.This Outward, if the rupture strength of tubular pottery 1 is more than 250MPa, even if then may be without this manufacture method, tubular Pottery 1 is not easy to produce cracking, deformation.But, this manufacture method does not hinder and is less than for rupture strength 30MPa or the tubular pottery 1 more than 250MPa.It addition, the rupture strength of tubular pottery 1 is according to by JIS Method that R1601:2008 specifies and the value that determines.
Below, the clamp for machining utilized in the manufacture method of the target material for sputtering target related at embodiment is described. Tubular pottery 1 is supported by the supporting mass 2 being arranged in its end side.Supporting mass 2 possesses the cylinder along tubular pottery 1 Axle and the tine 2a that configures.
Tine 2a possess be configured to relative to the circumference of tubular pottery 1 the most equally spaced bearing claw 2a1, 2a2、2a3.Bearing claw 2a1 has the structure utilizing vulcanie 2a12 to be coated with core 2a11, additionally, Bearing claw 2a2 and 2a3 also has the composition as bearing claw 2a1.
Here, as the core 2a11 of bearing claw 2a1, it is possible to use such as ferrum, rustless steel, titanium and titanium alloy In metal material, but it is not limited to this.Additionally, as vulcanie 2a12, it is possible to use according to JIS The hardness that K6253-3:2012 specifies is the rubber of less than more than 80 90, such as neoprene etc., but also may be used Select with the intensity according to core 2a11.
Bearing claw 2a1,2a2, the 2a3 so constituted is arranged respectively to can be in the radially independence of tubular pottery 1 Ground is mobile.Below, illustrate to utilize supporting mass 2 to the method supporting tubular pottery 1.
First, moving supporting mass 2 makes tine 2a be inserted into the hollow bulb 7 of tubular pottery 1.Bearing claw 2a1, The interval of 2a2,2a3 is wide and in the case of cannot inserting hollow bulb 7, makes bearing claw 2a1,2a2,2a3 in advance Radially inner side to tubular pottery 1 moves.
Below, utilize tine 2a to support tubular pottery 1.Specifically, bearing claw 2a1,2a2,2a3 are made Radial outside to tubular pottery 1 moves, and makes bearing claw 2a1,2a2,2a3 and tubular pottery 1 with authorized pressure Inner peripheral surface 5 abut.Here, enable the pressure that bearing claw 2a1,2a2,2a3 abut according to tubular pottery 1 The rotating speed of intensity, the material of vulcanie 2a12 and tubular pottery 1 described later etc. and suitably change.
Then, tine 2a the tubular pottery 1 supported is installed to for being allowed to circumferentially rotatable round The grinding attachments such as cylinder grinding disc, are carried out grinding by emery wheel 3.Now, in order to prevent vibration, it is also possible to utilize and prevent The end face of the end face opposite side supported with supporting mass 2 that vibration tong 4 fixes tubular pottery 1.It addition, Vibration tong 4 is prevented such as to be made up of ferrum, rustless steel, titanium and titanium alloy or other metal materials etc..
Here, bearing claw 2a1,2a2,2a3 to be inserted the hollow bulb 7 of tubular pottery 1, until tubular pottery 1 is complete Long more than 10%, preferably less than more than 10% 50%, and make it abut with inner peripheral surface 5.If insertion bearing claw The degree of depth of 2a1,2a2,2a3 less than tubular pottery 1 total length 10%, then load can concentrate on be supported by pawl 2a1, The part of 2a2,2a3 supporting, thus become tubular pottery 1 cracking, the reason of deformation.
Additionally, the rotating speed of tubular pottery 1 can set according to the intensity of tubular pottery 1 and size, it is preferably Such as more than 10rpm below 150rpm.If the rotating speed of tubular pottery 1 is less than 10rpm, then possible emery wheel 3 is to cylinder The grinding of shape pottery 1 is unstable thus machining accuracy reduces, or causes due to the slow of process velocity manufacturing The prolongation of time.If additionally, the rotating speed of tubular pottery 1 is more than 150rpm, then the load of tubular pottery 1 is become Greatly, may such as tubular pottery 1 cracking in grinding process.
It addition, in FIG, in order to prevent in the case of the outer peripheral face 6 of tubular pottery 1 is carried out longitudinal grinding Support 2 contacts with emery wheel 3, and is provided with gap between tubular pottery 1 and supporting mass 2, but according to mill Cutting method, it is possible to so that tubular pottery 1 contacts with supporting mass 2.
Additionally, in the above-described embodiment, illustrate that tine 2a is made up of three bearing claws 2a1,2a2,2a3 Example, but as long as being more than three, not do not limit, the idol in preferably 4~16, more preferably 4~16 Number, particularly can be made up of four or eight bearing claws.
Below, utilizing Fig. 3, the manufacture method of the target material for sputtering target relating to embodiment illustrates.Fig. 3 It it is the flow chart of the processing sequence representing that the tubular pottery 1 relating to embodiment is processed.
As it is shown on figure 3, first, the hollow bulb 7 at tubular pottery 1 insert more than three bearing claw 2a1,2a2, 2a3 (step S11).It follows that make bearing claw 2a1,2a2,2a3 moving radially along tubular pottery 1, so that It abuts (step S12) respectively with the inner peripheral surface 5 of tubular pottery 1.
Then, tubular pottery 1 is made circumferentially rotatable outer peripheral face 6 to be carried out grinding (step S13).By above Each operation, uses the process finishing of a series of tubular pottery 1 of bearing claw 2a1,2a2,2a3.
It addition, in the case of making tubular sputtering target target, carry out into one after above-mentioned steps S13 The processing of step.
In the case of Gai, in step s 13, the outer peripheral face 6 of tubular pottery 1 be processed into bigger than final external diameter External diameter after, unload lower supports 2 from tubular pottery 1.It follows that on the basis of finished outer peripheral face 6, Carry out the processing of inner peripheral surface 5.Further, again outer peripheral face 6 is processed, is ground to target size.Additionally, The length direction of tubular pottery 1 is processed into target size by cut-out or grinding.
Embodiment
Embodiment 1
The specific surface area (BET specific surface area) will measured by BET (Brunauer-Emmett-Teller) method For 5m2The SnO of/g2Powder 10 mass % and BET specific surface area are 5m2The In of/g2O3Powder 90 mass % is mixed Close, utilize zirconia ball to carry out ball milling mixing in tank, modulate material powder.
In this tank, for material powder 100 mass %, add the polyvinyl alcohol of 0.3 mass %, 0.2 matter respectively The amount polycarboxylic acids ammonium of %, the Polyethylene Glycol of 0.5 mass % and the water of 50 mass %, carry out ball milling mixing and modulate Slurry.Then, this slurry is supplied to spray-drying installation, is 14 at atomization rotating speed, 000rpm, entrance temperature Degree is 200 DEG C, outlet temperature is spray-dried under conditions of being 80 DEG C, modulates granule.
It is that (wall thickness is 220mm to the internal diameter with the cylindric core (plug) that external diameter is 150mm 10mm), the polyurethane rubber film of the drum of a length of 1300mm vibrates while filling this Granule, after rubber pattern is airtight, at 800kgf/cm2Pressure under carry out CIP (Cold Isostatic Pressing, isostatic cool pressing) molding, produce the molded body of general cylindrical shape.
At 600 DEG C, the heating of this molded body is removed organic principle in 10 hours.Programming rate is from room temperature It is 20 DEG C/h to the temperature ranges of 400 DEG C, is being 50 DEG C/h from 400 DEG C to 600 DEG C.And then, to the one-tenth after heating Type body is fired, and produces sintered body 1.Firing is in oxygen atmosphere, in the intensification speed started from room temperature Degree is 300 DEG C/h, carries out under conditions of keeping 12 hours after being heated to firing temperature 1550 DEG C.Cooling rate exists It is 50 DEG C/h in the range of 1550 DEG C to 800 DEG C, is 30 DEG C/h after 800 DEG C.
The sintered body 1 produced by said method is carried out cut-out and makes its a length of 1000mm, and will be arranged at The tine 2a of a length of 180mm of supporting mass 2 inserts 150mm in the hollow bulb 7 of sintered body 1.Tine 2a has three bearing claws 2a1,2a2,2a3.Bearing claw 2a1 is to utilize the vulcanie 2a12 that thickness is 5mm That is neoprene that hardness is 90 is coated with the core of stainless steel of a diameter of 10mm, a length of 180mm The periphery of 2a11, bearing claw 2a2,2a3 have the structure as bearing claw 2a1.
Then, make bearing claw 2a1,2a2,2a3 abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, and Make sintered body 1 with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, external diameter is processed into 153.2mm。
Embodiment 2
Allotment BET specific surface area is 4m2ZnO powder 25.9 mass % of/g, BET specific surface area are 7m2/G's In2O3Powder 44.2 mass % and BET specific surface area are 10m2The Ga of/g2O3Powder 29.9 mass %, profit in tank Carry out ball milling mixing with zirconia ball, modulate material powder.
In this tank, for above-mentioned raw materials powder 100 mass %, add respectively 0.3 mass % polyvinyl alcohol, The polycarboxylic acids ammonium of 0.4 mass %, the Polyethylene Glycol of 1.0 mass % and the water of 50 mass %, carry out ball milling mixing, Modulate slurry.
Then, with method same as in Example 1 carry out the modulation of granule, the making of molded body and Organic principle is removed from molded body.And then, start to be heated to 1400 DEG C with 300 DEG C/h of programming rate from room temperature, After keeping 12 hours, cool down with 50 DEG C/h of cooling rate, be so shaped firing of body, produce Sintered body 1.Afterwards, similarly to Example 1 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 3
Allotment BET specific surface area is 4m2ZnO powder 97 mass % of/g and BET specific surface area are 5m2/ g's Al2O3Powder 3 mass %, and utilize zirconia ball to carry out ball milling mixing in tank, modulate material powder.
In this tank, for above-mentioned raw materials powder 100 mass %, add respectively 0.3 mass % polyvinyl alcohol, The polycarboxylic acids ammonium of 0.4 mass %, the Polyethylene Glycol of 1.0 mass % and the water of 50 mass %, and it is mixed to carry out ball milling Close, modulate slurry.
Then, with method same as in Example 1 carry out the modulation of granule, the making of molded body and Organic principle is removed from molded body.And then, start to be heated to 1400 DEG C with 300 DEG C/h of programming rate from room temperature, After keeping 10 hours, cool down with 50 DEG C/h of cooling rate, be so shaped firing of body, produce Sintered body 1.Afterwards, similarly to Example 1 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 4
Use have cylindric core (plug) that external diameter is 150mm, internal diameter be 220mm (wall thickness is 10mm), The polyurethane rubber film of the drum of a length of 800mm, in addition with method system similarly to Example 1 Make sintered body 1.
The sintered body 1 produced by said method is carried out cut-out and makes its a length of 600mm, will be arranged at and prop up The tine 2a of a length of 100mm holding body 2 inserts 80mm in the hollow bulb 7 of sintered body 1.Tine 2a has There are three bearing claws 2a1,2a2,2a3.Bearing claw 2a1 be utilize vulcanie 2a12 that thickness is 5mm that is Hardness is the core 2a11 of the stainless steel of the neoprene a diameter of 10mm of cladding of 90, a length of 100mm Periphery, bearing claw 3a2,2a3 have the structure as bearing claw 2a1.
Then, make bearing claw 2a abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, pass through machining Machine make sintered body 1 with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, by external diameter process Become 153.2mm.
Embodiment 5
Use the polyurethane rubber film of embodiment 4, in addition produce burning by method similarly to Example 2 Adult 1.Afterwards, similarly to Example 4 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 6
Use the polyurethane rubber film of embodiment 4, in addition produce burning by method similarly to Example 3 Adult 1.Afterwards, similarly to Example 4 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 7
Producing being arranged at the tine 2a of a length of 180mm of supporting mass 2 similarly to Example 1 The hollow bulb 7 of sintered body 1 inserts 100mm.Afterwards, similarly to Example 1 the external diameter of sintered body 1 is processed Become 153.2mm.
Comparative example 1
Using to possess does not utilizes vulcanie 2a12 cladding to expose bearing claw 2a1,2a2,2a3 of core 2a11 Tine 2a, the most similarly to Example 1 the external diameter of sintered body 1 is processed into 153.2mm.
Comparative example 2
Use the sintered body 1 produced similarly to Example 2, in addition by external diameter in the same manner as comparative example 1 It is processed into 153.2mm.
Comparative example 3
Use the sintered body 1 produced similarly to Example 3, in addition by external diameter in the same manner as comparative example 1 It is processed into 153.2mm.
Comparative example 4
The tine 2a of a length of 80mm of supporting mass 2 will be arranged in the burning produced similarly to Example 1 The hollow bulb 7 of adult 1 inserts 50mm.Tine 2a has three bearing claws 2a1,2a2,2a3.Bearing claw 2a1 is to utilize the vulcanie 2a12 that thickness is 5mm that is the neoprene that hardness is 90 cladding a diameter of 10mm, the periphery of core 2a11 of stainless steel of a length of 80mm, bearing claw 2a2,2a3 have With the structure as bearing claw 2a1.
Then, make bearing claw 2a abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, pass through machining Machine make to burn till body 1 processed with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, external diameter is added Work becomes 153mm.
Comparative example 5
Use the sintered body 1 produced similarly to Example 2, in addition by external diameter in the same manner as comparative example 4 It is processed into 153.2mm.
Comparative example 6
Use the sintered body 1 produced similarly to Example 3, in addition by external diameter in the same manner as comparative example 4 It is processed into 153.2mm.
Comparative example 7
Use the sintered body 1 produced similarly to Example 4, in addition by external diameter in the same manner as comparative example 4 It is processed into 153.2mm.
Comparative example 8
Use the sintered body 1 produced similarly to Example 5, in addition by external diameter in the same manner as comparative example 4 It is processed into 153.2mm.
Comparative example 9
Use the sintered body 1 produced similarly to Example 6, in addition by external diameter in the same manner as comparative example 4 It is processed into 153.2mm.
Comparative example 10
Producing being arranged at the tine 2a of a length of 130mm of supporting mass 2 similarly to Example 1 The hollow bulb 7 of sintered body 1 inserts 95mm.Tine 2a has three bearing claws 2a1,2a2,2a3.Supporting Pawl 2a1 is to utilize the vulcanie 2a12 that thickness is 5mm that is the neoprene that hardness is 90 cladding a diameter of 10mm, the periphery of core 2a11 of stainless steel of a length of 130mm, bearing claw 2a2,2a3 have There is the structure as bearing claw 2a1.
Then, make bearing claw 2a abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, utilize machining Machine make sintered body 1 with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, by external diameter process Become 153.2mm.
The evaluation methodology of the sintered body (tubular pottery) 1 after the processing obtained in embodiment and comparative example is such as Shown in following.That is, about the evaluation of cracking, except judging that tubular pottery 1 in grinding is with or without cracking Outward, also after grinding, judge that the tubular pottery 1 taken off from supporting mass 2 is with or without generation by visual observations Crackle.The 10 tubular potteries 1 similarly making and processing are carried out same evaluation, represents in Table 1 Produce the radical of cracking.It addition, the value of the density shown in table 1 and rupture strength has been averagely, 10 tubulars are made pottery The measurement result of porcelain 1 and the value that obtains.Additionally, the tubular pottery 1 processed in each embodiment and comparative example All meet density 5.0g/cm3Above, above below the 250MPa of rupture strength 30MPa.
Table 1
In the above-described embodiment, explanation be core 2a11 be cylindrical shape, but be not limited to this.Such as, Can also be that triangular shape, quadrilateral shape etc. are polygon-shaped.In the case of Gai, in order to put on when being dispersed in abutting The pressure of inner peripheral surface 5, the preferably corner angle to core 2a11 implement rounded corners, or by vulcanie 2a12 Cladding increase and the contact area of inner peripheral surface 5.
Additionally, in the above-described embodiment, explanation utilize vulcanie 2a12 to cover outside core 2a11 The mode of circumferential portion is coated with, but is not limited to this.For example, it is possible to utilize vulcanie 2a12 to be only coated with The part abutted with the inner peripheral surface 5 of tubular pottery 1, in addition it is also possible to cladding core 2a11 is overall, i.e. also wrap Cover fore-end.
Those skilled in the art can easily derive more beneficial effect and variation.Therefore, the present invention Widely mode is not limited to above-described specific detailed content and representational embodiment.Cause This, the concept master without departing from the invention summarized defined in the scope of appended claims and equivalent thereof Purport or scope, it is possible to carry out various change.

Claims (7)

1. the manufacture method of a target material for sputtering target, it is characterised in that including:
In the hollow bulb of tubular that total length is more than 500mm pottery, by more than three by vulcanie The bearing claw of cladding is inserted into the operation of the degree of depth of more than the 10% of the total length of described tubular pottery;
Make the bearing claw of described more than three inner peripheral surface respectively with described tubular pottery abut, support institute State the operation of tubular pottery;And
Make the ceramic circumference along described tubular pottery of described tubular supported by the bearing claw of described more than three Rotate, process the operation of the outer peripheral face of described tubular pottery.
The manufacture method of target material for sputtering target the most according to claim 1, it is characterised in that:
The density of described tubular pottery is at 5.0g/cm3Above and rupture strength is at below 250MPa.
The manufacture method of target material for sputtering target the most according to claim 1 and 2, it is characterised in that:
Described bearing claw is configured to radially independently moving at described tubular pottery.
The manufacture method of target material for sputtering target the most according to any one of claim 1 to 3, its feature It is:
Described tubular pottery rotating speed circumferentially is at more than 10rpm below 150rpm.
The manufacture method of target material for sputtering target the most according to any one of claim 1 to 4, its feature It is:
The material of described tubular pottery is ITO, IGZO or AZO.
6. a tine, it is characterised in that including:
The bearing claw of more than three, it is coated with by vulcanie, by the tubular pottery that total length is more than 500mm Porcelain be supported to can along described tubular pottery rotating in a circumferential direction,
The bearing claw of described more than three, the inner peripheral surface with described tubular pottery abuts to described tubular respectively The degree of depth of more than the 10% of the total length of pottery.
Tine the most according to claim 6, it is characterised in that:
Described bearing claw is configured to radially independently moving at described tubular pottery.
CN201580004891.0A 2014-08-22 2015-05-20 Method for manufacturing target material for sputtering target and claw member Pending CN105917022A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014169807A JP5887391B1 (en) 2014-08-22 2014-08-22 Method for producing target material for sputtering target and claw member
JP2014-169807 2014-08-22
PCT/JP2015/064530 WO2016027534A1 (en) 2014-08-22 2015-05-20 Method for manufacturing target material for sputtering target and claw member

Publications (1)

Publication Number Publication Date
CN105917022A true CN105917022A (en) 2016-08-31

Family

ID=55350488

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580004891.0A Pending CN105917022A (en) 2014-08-22 2015-05-20 Method for manufacturing target material for sputtering target and claw member

Country Status (5)

Country Link
JP (1) JP5887391B1 (en)
KR (1) KR20160082255A (en)
CN (1) CN105917022A (en)
TW (1) TWI573890B (en)
WO (1) WO2016027534A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113635214A (en) * 2021-07-26 2021-11-12 先导薄膜材料(广东)有限公司 Sputtering target grinding device and machining method
CN114394818A (en) * 2022-02-10 2022-04-26 江苏东玖光电科技有限公司 Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107236934A (en) * 2016-03-28 2017-10-10 Jx金属株式会社 Cylinder type sputtering target and its manufacture method
JP6397869B2 (en) * 2016-03-28 2018-09-26 Jx金属株式会社 Cylindrical sputtering target and manufacturing method thereof
KR20230080445A (en) 2020-10-05 2023-06-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 imaging device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316935A (en) * 1986-07-04 1988-01-23 Toshiba Corp Chuck for machining ceramics
CN1836841A (en) * 2005-03-22 2006-09-27 肖特股份公司 Grinding method and grinder
CN203751795U (en) * 2014-03-25 2014-08-06 四川精瑞硬质合金科技发展有限公司 Fixture for turning internal and external circular-arc-shaped surfaces of long shaft type cylindrical workpieces
CN203751797U (en) * 2014-03-25 2014-08-06 四川精瑞硬质合金科技发展有限公司 Fixture for turning long shaft type cylindrical workpieces

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4961672B2 (en) * 2004-03-05 2012-06-27 東ソー株式会社 Cylindrical sputtering target, ceramic sintered body, and manufacturing method thereof
WO2007041425A2 (en) * 2005-10-03 2007-04-12 Thermal Conductive Bonding, Inc. Very long cylindrical sputtering target and method for manufacturing
TW201326437A (en) * 2011-12-23 2013-07-01 Metal Ind Res & Dev Ct Composite vacuum sputtering apparatus with spinning and revolution capabilities
JP5750060B2 (en) * 2012-01-18 2015-07-15 三井金属鉱業株式会社 Ceramic cylindrical sputtering target material and manufacturing method thereof
KR20160085907A (en) * 2012-08-22 2016-07-18 제이엑스금속주식회사 Cylindrical indium sputtering target and process for producing same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316935A (en) * 1986-07-04 1988-01-23 Toshiba Corp Chuck for machining ceramics
CN1836841A (en) * 2005-03-22 2006-09-27 肖特股份公司 Grinding method and grinder
CN203751795U (en) * 2014-03-25 2014-08-06 四川精瑞硬质合金科技发展有限公司 Fixture for turning internal and external circular-arc-shaped surfaces of long shaft type cylindrical workpieces
CN203751797U (en) * 2014-03-25 2014-08-06 四川精瑞硬质合金科技发展有限公司 Fixture for turning long shaft type cylindrical workpieces

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113635214A (en) * 2021-07-26 2021-11-12 先导薄膜材料(广东)有限公司 Sputtering target grinding device and machining method
CN114394818A (en) * 2022-02-10 2022-04-26 江苏东玖光电科技有限公司 Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio
CN114394818B (en) * 2022-02-10 2022-10-18 江苏东玖光电科技有限公司 Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio

Also Published As

Publication number Publication date
JP2016044333A (en) 2016-04-04
WO2016027534A1 (en) 2016-02-25
JP5887391B1 (en) 2016-03-16
TW201610199A (en) 2016-03-16
TWI573890B (en) 2017-03-11
KR20160082255A (en) 2016-07-08

Similar Documents

Publication Publication Date Title
CN105917022A (en) Method for manufacturing target material for sputtering target and claw member
US8828198B2 (en) Cylindrical sputtering target
TWI540114B (en) Ceramic cylindrical sputtering target and method for manufacturing thereof
JP6496681B2 (en) Target material for cylindrical sputtering target and cylindrical sputtering target
JP5816394B1 (en) ITO sputtering target material and manufacturing method thereof
CN104211407A (en) Process for forming large-size complex-shaped silicon carbide ceramic biscuit
CN105272270A (en) Sintering method for large-dimension ceramic straight tube or rod
CN107109631A (en) Manufacture method, cylindrical shape sputter target and the firing assisted tool of cylindrical shape target
CN103639248B (en) The bearing calibration of ovalizing deflection after a kind of large-scale ring parts heat treatment
CN104177093B (en) The low shrinkage and deformation rate sintering method of annular porcelain body
KR100948107B1 (en) Tube for producing ionization and device having thereof
CN102847947A (en) Sintering preparation method of hard alloy rings
CN220380221U (en) Catalyst roasting furnace with wireless temperature detection function
JP6842369B2 (en) Manufacturing method of cylindrical ceramic sintered body
TW202120456A (en) Manufacturing method of cylindrical sputtering target and firing jig used in the manufacturing method
CN103177918B (en) A kind of magnetron and plasma processing device
GB1437292A (en) Rotary retort furnace
CN108562196B (en) Dual-working-condition gas generating agent grain
CN206510258U (en) A kind of plastics extruder grain template
CN204286054U (en) Ground phosphate rock pelletizing shaft kiln burning belt carcass pipe
JP2012149321A (en) Sputtering target and method for manufacturing the same
Kroupskaya et al. Construction of hybrid lacZ genes to study the E. coli rpljl operon genes expression mechanisms
SU1167411A1 (en) Method of controlling roasting process in rotary furnace
CN104588424A (en) Baking machine for steel pipes
CN104713117A (en) Boiler wall manufacturing method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20160831