CN105917022A - Method for manufacturing target material for sputtering target and claw member - Google Patents
Method for manufacturing target material for sputtering target and claw member Download PDFInfo
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- CN105917022A CN105917022A CN201580004891.0A CN201580004891A CN105917022A CN 105917022 A CN105917022 A CN 105917022A CN 201580004891 A CN201580004891 A CN 201580004891A CN 105917022 A CN105917022 A CN 105917022A
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- pottery
- tubular
- tubular pottery
- bearing claw
- described tubular
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B5/00—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor
- B24B5/18—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centreless means for supporting, guiding, floating or rotating work
- B24B5/22—Machines or devices designed for grinding surfaces of revolution on work, including those which also grind adjacent plane surfaces; Accessories therefor involving centreless means for supporting, guiding, floating or rotating work for grinding cylindrical surfaces, e.g. on bolts
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/001—Joining burned ceramic articles with other burned ceramic articles or other articles by heating directly with other burned ceramic articles
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- C04B38/00—Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
- C04B38/008—Bodies obtained by assembling separate elements having such a configuration that the final product is porous or by spirally winding one or more corrugated sheets
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
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- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
Abstract
A method for manufacturing target material for a sputtering target according to an embodiment includes a step for inserting three or more support claws into a hollow part of cylindrical ceramics with a total length of 500 mm or more up to a length of 10% or more of the total length of the cylindrical ceramics, a step for supporting the cylindrical ceramics by making the three or more support claws each come into contact with the inner peripheral surface of the cylindrical ceramics, and a step for processing the outer peripheral surface of the cylindrical ceramics by rotating the cylindrical ceramics that has been supported by the three or more support claws in the circumferential direction of the cylindrical ceramics. The three or more support claws are coated by a hard rubber.
Description
Technical field
The present invention relates to manufacture method and the tine of target material for sputtering target.
Background technology
Known a kind of magnetron type rotating cathode sputter equipment, it has magnetic field and occurs in the inner side of cylindrical shape target
Device, cools down from inner side to this target, and then makes the rotation of this target sputter.This
In sputter equipment, whole of the outer surface of target is etched equably for etched area.Accordingly, with respect to
Service efficiency is the existing flat magnetic control sputtering device of 20~30%, magnetron type rotating cathode sputtering dress
Put the highest service efficiency being obtained in that more than 70%.
Additionally, in magnetron type rotating cathode sputter equipment, make cylindrical shape target rotate and spatter
Penetrate, therefore can put into bigger power at per unit area compared with flat magnetic controlled tube sputtering apparatus, so
Higher film forming speed can be obtained.
This rotating cathode sputtering mode is readily processible to drum and the high metal system of mechanical strength because using
Target and widely available.On the other hand, to have mechanical strength compared with metal target low and crisp for ceramic target
Such characteristic, is processed into drum and is not easy to.
In recent years, the glass substrate used in flat faced display, solaode becomes to maximize, in order at this
It is efficiently formed thin film on maximization substrate, needs such as more than 3m such strip cylindrical target.Therefore, structure
The length becoming the cylindrical shape target of cylindrical target is also required to lengthen further.
A kind of known method, when processing tubular pottery and making cylindrical shape target, fixes the one of this tubular pottery
End, makes the line rotation centered by Cylindorical rod of tubular pottery carry out grinding, adjust the internal diameter of target with
And the size (for example, referring to patent documentation 1) of external diameter.
Patent documentation 1: Japanese Unexamined Patent Publication 2011-177889 publication
Summary of the invention
But, in the above prior art when the tubular pottery that processing length is more than 500mm, however it remains
Produce cracking, the probability of deformation, therefore there is further room for improvement.
A kind of mode of embodiment completes in view of foregoing, and it provides a kind of target material for sputtering target
Manufacture method and tine, the total length of the tubular processed if any pottery is more than 500mm, it is also possible to suppression
Cracking, the generation of deformation.
The manufacture method of the target material for sputtering target that embodiment relates to, including: it is the cylinder of more than 500mm in total length
In the hollow bulb of shape pottery, the bearing claw of more than three is inserted into more than the 10% of the ceramic total length of above-mentioned tubular
The operation of the degree of depth;The bearing claw of more than the above three inner peripheral surface respectively with above-mentioned tubular pottery is made to abut,
Support the operation of above-mentioned tubular pottery;And make the above-mentioned tubular pottery that the bearing claw more than by above three supports
Along rotating in a circumferential direction of above-mentioned tubular pottery, process the operation of the outer peripheral face of above-mentioned tubular pottery.More than three
Bearing claw is coated with by vulcanie.
A kind of mode according to embodiment, using the teaching of the invention it is possible to provide the manufacture method of a kind of target material for sputtering target and claw
Part, the total length of the tubular processed if any pottery is more than 500mm, it is also possible to suppression cracking, the generation of deformation.
Accompanying drawing explanation
Fig. 1 is the explanatory diagram of the summary of the manufacture method of the target material for sputtering target representing that embodiment relates to.
Fig. 2 is the A-A ' profile of Fig. 1.
Fig. 3 is the flow chart of an example of the manufacture method of the target material for sputtering target representing that embodiment relates to.
Symbol description
1 tubular pottery (sintered body)
2 supporting masses
2a tine
2a1,2a2,2a3 bearing claw
3 emery wheels
4 prevent vibration tong
5 inner peripheral surfaces
6 outer peripheral faces
7 hollow bulbs
Detailed description of the invention
Hereinafter, referring to the drawings, manufacture method and the reality of tine to target material for sputtering target disclosed by the invention
The mode of executing is described in detail.It addition, the present invention is not limited to embodiment shown below.
First, using Fig. 1, Fig. 2, the summary of the manufacture method of the target material for sputtering target relating to embodiment is entered
Row explanation.Fig. 1 is the explanatory diagram of the summary of the manufacture method of the target material for sputtering target representing that embodiment relates to,
Fig. 2 is the A-A ' profile of Fig. 1.
As depicted in figs. 1 and 2, tubular pottery 1 is shaped to the tubular with hollow bulb 7.It addition, in FIG,
In order to make it easy to understand, only tubular pottery 1 is represented with profile.First target material for sputtering target is below described
One example of manufacture method.
Tubular pottery 1 is made through following operation: to the slurry containing ceramic material powder and organic additive
Material carries out pelletize to make the granulating working procedure of granule;Make this granule molding to make the one-tenth of the molded body of tubular
Type operation;And fire this molded body to make the firing process of sintered body.It addition, the manufacture method of sintered body
It is not limited to above-mentioned steps, it is also possible to be any method.
To the sintered body so produced, the manufacture method of the target material for sputtering target related to by embodiment is carried out
Processing.After, there is the symbol as ceramic with tubular to this sintered body mark 1 and said as sintered body 1
Bright situation.It addition, tubular pottery 1 can also be that the sintered body being fired into such as column is carried out machining
And form the pottery of tubular.
Additionally, in the case of processing tubular pottery 1 makes target material for sputtering target, as Ceramic Material, energy
Enough exemplify ITO (In2O3-SnO2)、IGZO(In2O3-Ga2O3-ZnO) and AZO (Al2O3-ZnO)
Deng, but it is not limited to this.
The tubular pottery 1 that the manufacture method of the target material for sputtering target that embodiment relates to is applicable to so to produce
Total length is the situation of more than 500mm, more preferably more than 600mm.If the total length of tubular pottery 1 is less than
500mm, even if then without this manufacture method, tubular pottery 1 is not easy to produce cracking, deformation.But, this
Manufacture method does not hinder the tubular pottery 1 being less than 500mm for total length.Additionally, higher limit is not exposed to spy
Do not limit, but preferably below 4000mm.
Additionally, the density of tubular pottery 1 is 5.0g/cm3Above, preferably 5.0g/cm3Above 8.0g/cm3Below.As
Really the density of tubular pottery 1 is less than 5.0g/cm3, then because the quality of such as tubular pottery 1 self is less, even if
Without this manufacture method, tubular pottery 1 is not easy to produce cracking, deformation.But, this manufacture method also might as well
Hinder for density less than 5.0g/cm3Tubular pottery 1.
Here, the density of tubular pottery 1 measures based on Archimedes method.Specifically, it is to make tubular pottery 1
The value that obtains divided by volume (in the water of=tubular pottery 1 water proportion) at a temperature of weight/measuring and calculating of aerial weight.
And, the rupture strength of tubular pottery 1 is below 250MPa, preferably more than 30MPa below 250MPa.
If the rupture strength of tubular pottery 1 is less than 30MPa, then may intensity too low thus processing becomes difficulty.This
Outward, if the rupture strength of tubular pottery 1 is more than 250MPa, even if then may be without this manufacture method, tubular
Pottery 1 is not easy to produce cracking, deformation.But, this manufacture method does not hinder and is less than for rupture strength
30MPa or the tubular pottery 1 more than 250MPa.It addition, the rupture strength of tubular pottery 1 is according to by JIS
Method that R1601:2008 specifies and the value that determines.
Below, the clamp for machining utilized in the manufacture method of the target material for sputtering target related at embodiment is described.
Tubular pottery 1 is supported by the supporting mass 2 being arranged in its end side.Supporting mass 2 possesses the cylinder along tubular pottery 1
Axle and the tine 2a that configures.
Tine 2a possess be configured to relative to the circumference of tubular pottery 1 the most equally spaced bearing claw 2a1,
2a2、2a3.Bearing claw 2a1 has the structure utilizing vulcanie 2a12 to be coated with core 2a11, additionally,
Bearing claw 2a2 and 2a3 also has the composition as bearing claw 2a1.
Here, as the core 2a11 of bearing claw 2a1, it is possible to use such as ferrum, rustless steel, titanium and titanium alloy
In metal material, but it is not limited to this.Additionally, as vulcanie 2a12, it is possible to use according to JIS
The hardness that K6253-3:2012 specifies is the rubber of less than more than 80 90, such as neoprene etc., but also may be used
Select with the intensity according to core 2a11.
Bearing claw 2a1,2a2, the 2a3 so constituted is arranged respectively to can be in the radially independence of tubular pottery 1
Ground is mobile.Below, illustrate to utilize supporting mass 2 to the method supporting tubular pottery 1.
First, moving supporting mass 2 makes tine 2a be inserted into the hollow bulb 7 of tubular pottery 1.Bearing claw 2a1,
The interval of 2a2,2a3 is wide and in the case of cannot inserting hollow bulb 7, makes bearing claw 2a1,2a2,2a3 in advance
Radially inner side to tubular pottery 1 moves.
Below, utilize tine 2a to support tubular pottery 1.Specifically, bearing claw 2a1,2a2,2a3 are made
Radial outside to tubular pottery 1 moves, and makes bearing claw 2a1,2a2,2a3 and tubular pottery 1 with authorized pressure
Inner peripheral surface 5 abut.Here, enable the pressure that bearing claw 2a1,2a2,2a3 abut according to tubular pottery 1
The rotating speed of intensity, the material of vulcanie 2a12 and tubular pottery 1 described later etc. and suitably change.
Then, tine 2a the tubular pottery 1 supported is installed to for being allowed to circumferentially rotatable round
The grinding attachments such as cylinder grinding disc, are carried out grinding by emery wheel 3.Now, in order to prevent vibration, it is also possible to utilize and prevent
The end face of the end face opposite side supported with supporting mass 2 that vibration tong 4 fixes tubular pottery 1.It addition,
Vibration tong 4 is prevented such as to be made up of ferrum, rustless steel, titanium and titanium alloy or other metal materials etc..
Here, bearing claw 2a1,2a2,2a3 to be inserted the hollow bulb 7 of tubular pottery 1, until tubular pottery 1 is complete
Long more than 10%, preferably less than more than 10% 50%, and make it abut with inner peripheral surface 5.If insertion bearing claw
The degree of depth of 2a1,2a2,2a3 less than tubular pottery 1 total length 10%, then load can concentrate on be supported by pawl 2a1,
The part of 2a2,2a3 supporting, thus become tubular pottery 1 cracking, the reason of deformation.
Additionally, the rotating speed of tubular pottery 1 can set according to the intensity of tubular pottery 1 and size, it is preferably
Such as more than 10rpm below 150rpm.If the rotating speed of tubular pottery 1 is less than 10rpm, then possible emery wheel 3 is to cylinder
The grinding of shape pottery 1 is unstable thus machining accuracy reduces, or causes due to the slow of process velocity manufacturing
The prolongation of time.If additionally, the rotating speed of tubular pottery 1 is more than 150rpm, then the load of tubular pottery 1 is become
Greatly, may such as tubular pottery 1 cracking in grinding process.
It addition, in FIG, in order to prevent in the case of the outer peripheral face 6 of tubular pottery 1 is carried out longitudinal grinding
Support 2 contacts with emery wheel 3, and is provided with gap between tubular pottery 1 and supporting mass 2, but according to mill
Cutting method, it is possible to so that tubular pottery 1 contacts with supporting mass 2.
Additionally, in the above-described embodiment, illustrate that tine 2a is made up of three bearing claws 2a1,2a2,2a3
Example, but as long as being more than three, not do not limit, the idol in preferably 4~16, more preferably 4~16
Number, particularly can be made up of four or eight bearing claws.
Below, utilizing Fig. 3, the manufacture method of the target material for sputtering target relating to embodiment illustrates.Fig. 3
It it is the flow chart of the processing sequence representing that the tubular pottery 1 relating to embodiment is processed.
As it is shown on figure 3, first, the hollow bulb 7 at tubular pottery 1 insert more than three bearing claw 2a1,2a2,
2a3 (step S11).It follows that make bearing claw 2a1,2a2,2a3 moving radially along tubular pottery 1, so that
It abuts (step S12) respectively with the inner peripheral surface 5 of tubular pottery 1.
Then, tubular pottery 1 is made circumferentially rotatable outer peripheral face 6 to be carried out grinding (step S13).By above
Each operation, uses the process finishing of a series of tubular pottery 1 of bearing claw 2a1,2a2,2a3.
It addition, in the case of making tubular sputtering target target, carry out into one after above-mentioned steps S13
The processing of step.
In the case of Gai, in step s 13, the outer peripheral face 6 of tubular pottery 1 be processed into bigger than final external diameter
External diameter after, unload lower supports 2 from tubular pottery 1.It follows that on the basis of finished outer peripheral face 6,
Carry out the processing of inner peripheral surface 5.Further, again outer peripheral face 6 is processed, is ground to target size.Additionally,
The length direction of tubular pottery 1 is processed into target size by cut-out or grinding.
Embodiment
Embodiment 1
The specific surface area (BET specific surface area) will measured by BET (Brunauer-Emmett-Teller) method
For 5m2The SnO of/g2Powder 10 mass % and BET specific surface area are 5m2The In of/g2O3Powder 90 mass % is mixed
Close, utilize zirconia ball to carry out ball milling mixing in tank, modulate material powder.
In this tank, for material powder 100 mass %, add the polyvinyl alcohol of 0.3 mass %, 0.2 matter respectively
The amount polycarboxylic acids ammonium of %, the Polyethylene Glycol of 0.5 mass % and the water of 50 mass %, carry out ball milling mixing and modulate
Slurry.Then, this slurry is supplied to spray-drying installation, is 14 at atomization rotating speed, 000rpm, entrance temperature
Degree is 200 DEG C, outlet temperature is spray-dried under conditions of being 80 DEG C, modulates granule.
It is that (wall thickness is 220mm to the internal diameter with the cylindric core (plug) that external diameter is 150mm
10mm), the polyurethane rubber film of the drum of a length of 1300mm vibrates while filling this
Granule, after rubber pattern is airtight, at 800kgf/cm2Pressure under carry out CIP (Cold Isostatic
Pressing, isostatic cool pressing) molding, produce the molded body of general cylindrical shape.
At 600 DEG C, the heating of this molded body is removed organic principle in 10 hours.Programming rate is from room temperature
It is 20 DEG C/h to the temperature ranges of 400 DEG C, is being 50 DEG C/h from 400 DEG C to 600 DEG C.And then, to the one-tenth after heating
Type body is fired, and produces sintered body 1.Firing is in oxygen atmosphere, in the intensification speed started from room temperature
Degree is 300 DEG C/h, carries out under conditions of keeping 12 hours after being heated to firing temperature 1550 DEG C.Cooling rate exists
It is 50 DEG C/h in the range of 1550 DEG C to 800 DEG C, is 30 DEG C/h after 800 DEG C.
The sintered body 1 produced by said method is carried out cut-out and makes its a length of 1000mm, and will be arranged at
The tine 2a of a length of 180mm of supporting mass 2 inserts 150mm in the hollow bulb 7 of sintered body 1.Tine
2a has three bearing claws 2a1,2a2,2a3.Bearing claw 2a1 is to utilize the vulcanie 2a12 that thickness is 5mm
That is neoprene that hardness is 90 is coated with the core of stainless steel of a diameter of 10mm, a length of 180mm
The periphery of 2a11, bearing claw 2a2,2a3 have the structure as bearing claw 2a1.
Then, make bearing claw 2a1,2a2,2a3 abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, and
Make sintered body 1 with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, external diameter is processed into
153.2mm。
Embodiment 2
Allotment BET specific surface area is 4m2ZnO powder 25.9 mass % of/g, BET specific surface area are 7m2/G's
In2O3Powder 44.2 mass % and BET specific surface area are 10m2The Ga of/g2O3Powder 29.9 mass %, profit in tank
Carry out ball milling mixing with zirconia ball, modulate material powder.
In this tank, for above-mentioned raw materials powder 100 mass %, add respectively 0.3 mass % polyvinyl alcohol,
The polycarboxylic acids ammonium of 0.4 mass %, the Polyethylene Glycol of 1.0 mass % and the water of 50 mass %, carry out ball milling mixing,
Modulate slurry.
Then, with method same as in Example 1 carry out the modulation of granule, the making of molded body and
Organic principle is removed from molded body.And then, start to be heated to 1400 DEG C with 300 DEG C/h of programming rate from room temperature,
After keeping 12 hours, cool down with 50 DEG C/h of cooling rate, be so shaped firing of body, produce
Sintered body 1.Afterwards, similarly to Example 1 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 3
Allotment BET specific surface area is 4m2ZnO powder 97 mass % of/g and BET specific surface area are 5m2/ g's
Al2O3Powder 3 mass %, and utilize zirconia ball to carry out ball milling mixing in tank, modulate material powder.
In this tank, for above-mentioned raw materials powder 100 mass %, add respectively 0.3 mass % polyvinyl alcohol,
The polycarboxylic acids ammonium of 0.4 mass %, the Polyethylene Glycol of 1.0 mass % and the water of 50 mass %, and it is mixed to carry out ball milling
Close, modulate slurry.
Then, with method same as in Example 1 carry out the modulation of granule, the making of molded body and
Organic principle is removed from molded body.And then, start to be heated to 1400 DEG C with 300 DEG C/h of programming rate from room temperature,
After keeping 10 hours, cool down with 50 DEG C/h of cooling rate, be so shaped firing of body, produce
Sintered body 1.Afterwards, similarly to Example 1 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 4
Use have cylindric core (plug) that external diameter is 150mm, internal diameter be 220mm (wall thickness is 10mm),
The polyurethane rubber film of the drum of a length of 800mm, in addition with method system similarly to Example 1
Make sintered body 1.
The sintered body 1 produced by said method is carried out cut-out and makes its a length of 600mm, will be arranged at and prop up
The tine 2a of a length of 100mm holding body 2 inserts 80mm in the hollow bulb 7 of sintered body 1.Tine 2a has
There are three bearing claws 2a1,2a2,2a3.Bearing claw 2a1 be utilize vulcanie 2a12 that thickness is 5mm that is
Hardness is the core 2a11 of the stainless steel of the neoprene a diameter of 10mm of cladding of 90, a length of 100mm
Periphery, bearing claw 3a2,2a3 have the structure as bearing claw 2a1.
Then, make bearing claw 2a abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, pass through machining
Machine make sintered body 1 with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, by external diameter process
Become 153.2mm.
Embodiment 5
Use the polyurethane rubber film of embodiment 4, in addition produce burning by method similarly to Example 2
Adult 1.Afterwards, similarly to Example 4 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 6
Use the polyurethane rubber film of embodiment 4, in addition produce burning by method similarly to Example 3
Adult 1.Afterwards, similarly to Example 4 the external diameter of this sintered body 1 is processed into 153.2mm.
Embodiment 7
Producing being arranged at the tine 2a of a length of 180mm of supporting mass 2 similarly to Example 1
The hollow bulb 7 of sintered body 1 inserts 100mm.Afterwards, similarly to Example 1 the external diameter of sintered body 1 is processed
Become 153.2mm.
Comparative example 1
Using to possess does not utilizes vulcanie 2a12 cladding to expose bearing claw 2a1,2a2,2a3 of core 2a11
Tine 2a, the most similarly to Example 1 the external diameter of sintered body 1 is processed into 153.2mm.
Comparative example 2
Use the sintered body 1 produced similarly to Example 2, in addition by external diameter in the same manner as comparative example 1
It is processed into 153.2mm.
Comparative example 3
Use the sintered body 1 produced similarly to Example 3, in addition by external diameter in the same manner as comparative example 1
It is processed into 153.2mm.
Comparative example 4
The tine 2a of a length of 80mm of supporting mass 2 will be arranged in the burning produced similarly to Example 1
The hollow bulb 7 of adult 1 inserts 50mm.Tine 2a has three bearing claws 2a1,2a2,2a3.Bearing claw
2a1 is to utilize the vulcanie 2a12 that thickness is 5mm that is the neoprene that hardness is 90 cladding a diameter of
10mm, the periphery of core 2a11 of stainless steel of a length of 80mm, bearing claw 2a2,2a3 have
With the structure as bearing claw 2a1.
Then, make bearing claw 2a abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, pass through machining
Machine make to burn till body 1 processed with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, external diameter is added
Work becomes 153mm.
Comparative example 5
Use the sintered body 1 produced similarly to Example 2, in addition by external diameter in the same manner as comparative example 4
It is processed into 153.2mm.
Comparative example 6
Use the sintered body 1 produced similarly to Example 3, in addition by external diameter in the same manner as comparative example 4
It is processed into 153.2mm.
Comparative example 7
Use the sintered body 1 produced similarly to Example 4, in addition by external diameter in the same manner as comparative example 4
It is processed into 153.2mm.
Comparative example 8
Use the sintered body 1 produced similarly to Example 5, in addition by external diameter in the same manner as comparative example 4
It is processed into 153.2mm.
Comparative example 9
Use the sintered body 1 produced similarly to Example 6, in addition by external diameter in the same manner as comparative example 4
It is processed into 153.2mm.
Comparative example 10
Producing being arranged at the tine 2a of a length of 130mm of supporting mass 2 similarly to Example 1
The hollow bulb 7 of sintered body 1 inserts 95mm.Tine 2a has three bearing claws 2a1,2a2,2a3.Supporting
Pawl 2a1 is to utilize the vulcanie 2a12 that thickness is 5mm that is the neoprene that hardness is 90 cladding a diameter of
10mm, the periphery of core 2a11 of stainless steel of a length of 130mm, bearing claw 2a2,2a3 have
There is the structure as bearing claw 2a1.
Then, make bearing claw 2a abut with the inner peripheral surface 5 of sintered body 1 and support sintered body 1, utilize machining
Machine make sintered body 1 with rotating speed 20rpm circumferentially rotatable while utilize emery wheel 3 grinding outer peripheral face 6, by external diameter process
Become 153.2mm.
The evaluation methodology of the sintered body (tubular pottery) 1 after the processing obtained in embodiment and comparative example is such as
Shown in following.That is, about the evaluation of cracking, except judging that tubular pottery 1 in grinding is with or without cracking
Outward, also after grinding, judge that the tubular pottery 1 taken off from supporting mass 2 is with or without generation by visual observations
Crackle.The 10 tubular potteries 1 similarly making and processing are carried out same evaluation, represents in Table 1
Produce the radical of cracking.It addition, the value of the density shown in table 1 and rupture strength has been averagely, 10 tubulars are made pottery
The measurement result of porcelain 1 and the value that obtains.Additionally, the tubular pottery 1 processed in each embodiment and comparative example
All meet density 5.0g/cm3Above, above below the 250MPa of rupture strength 30MPa.
Table 1
In the above-described embodiment, explanation be core 2a11 be cylindrical shape, but be not limited to this.Such as,
Can also be that triangular shape, quadrilateral shape etc. are polygon-shaped.In the case of Gai, in order to put on when being dispersed in abutting
The pressure of inner peripheral surface 5, the preferably corner angle to core 2a11 implement rounded corners, or by vulcanie 2a12
Cladding increase and the contact area of inner peripheral surface 5.
Additionally, in the above-described embodiment, explanation utilize vulcanie 2a12 to cover outside core 2a11
The mode of circumferential portion is coated with, but is not limited to this.For example, it is possible to utilize vulcanie 2a12 to be only coated with
The part abutted with the inner peripheral surface 5 of tubular pottery 1, in addition it is also possible to cladding core 2a11 is overall, i.e. also wrap
Cover fore-end.
Those skilled in the art can easily derive more beneficial effect and variation.Therefore, the present invention
Widely mode is not limited to above-described specific detailed content and representational embodiment.Cause
This, the concept master without departing from the invention summarized defined in the scope of appended claims and equivalent thereof
Purport or scope, it is possible to carry out various change.
Claims (7)
1. the manufacture method of a target material for sputtering target, it is characterised in that including:
In the hollow bulb of tubular that total length is more than 500mm pottery, by more than three by vulcanie
The bearing claw of cladding is inserted into the operation of the degree of depth of more than the 10% of the total length of described tubular pottery;
Make the bearing claw of described more than three inner peripheral surface respectively with described tubular pottery abut, support institute
State the operation of tubular pottery;And
Make the ceramic circumference along described tubular pottery of described tubular supported by the bearing claw of described more than three
Rotate, process the operation of the outer peripheral face of described tubular pottery.
The manufacture method of target material for sputtering target the most according to claim 1, it is characterised in that:
The density of described tubular pottery is at 5.0g/cm3Above and rupture strength is at below 250MPa.
The manufacture method of target material for sputtering target the most according to claim 1 and 2, it is characterised in that:
Described bearing claw is configured to radially independently moving at described tubular pottery.
The manufacture method of target material for sputtering target the most according to any one of claim 1 to 3, its feature
It is:
Described tubular pottery rotating speed circumferentially is at more than 10rpm below 150rpm.
The manufacture method of target material for sputtering target the most according to any one of claim 1 to 4, its feature
It is:
The material of described tubular pottery is ITO, IGZO or AZO.
6. a tine, it is characterised in that including:
The bearing claw of more than three, it is coated with by vulcanie, by the tubular pottery that total length is more than 500mm
Porcelain be supported to can along described tubular pottery rotating in a circumferential direction,
The bearing claw of described more than three, the inner peripheral surface with described tubular pottery abuts to described tubular respectively
The degree of depth of more than the 10% of the total length of pottery.
Tine the most according to claim 6, it is characterised in that:
Described bearing claw is configured to radially independently moving at described tubular pottery.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2014169807A JP5887391B1 (en) | 2014-08-22 | 2014-08-22 | Method for producing target material for sputtering target and claw member |
JP2014-169807 | 2014-08-22 | ||
PCT/JP2015/064530 WO2016027534A1 (en) | 2014-08-22 | 2015-05-20 | Method for manufacturing target material for sputtering target and claw member |
Publications (1)
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CN105917022A true CN105917022A (en) | 2016-08-31 |
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CN201580004891.0A Pending CN105917022A (en) | 2014-08-22 | 2015-05-20 | Method for manufacturing target material for sputtering target and claw member |
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JP (1) | JP5887391B1 (en) |
KR (1) | KR20160082255A (en) |
CN (1) | CN105917022A (en) |
TW (1) | TWI573890B (en) |
WO (1) | WO2016027534A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113635214A (en) * | 2021-07-26 | 2021-11-12 | 先导薄膜材料(广东)有限公司 | Sputtering target grinding device and machining method |
CN114394818A (en) * | 2022-02-10 | 2022-04-26 | 江苏东玖光电科技有限公司 | Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN107236934A (en) * | 2016-03-28 | 2017-10-10 | Jx金属株式会社 | Cylinder type sputtering target and its manufacture method |
JP6397869B2 (en) * | 2016-03-28 | 2018-09-26 | Jx金属株式会社 | Cylindrical sputtering target and manufacturing method thereof |
KR20230080445A (en) | 2020-10-05 | 2023-06-07 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | imaging device |
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JP4961672B2 (en) * | 2004-03-05 | 2012-06-27 | 東ソー株式会社 | Cylindrical sputtering target, ceramic sintered body, and manufacturing method thereof |
WO2007041425A2 (en) * | 2005-10-03 | 2007-04-12 | Thermal Conductive Bonding, Inc. | Very long cylindrical sputtering target and method for manufacturing |
TW201326437A (en) * | 2011-12-23 | 2013-07-01 | Metal Ind Res & Dev Ct | Composite vacuum sputtering apparatus with spinning and revolution capabilities |
JP5750060B2 (en) * | 2012-01-18 | 2015-07-15 | 三井金属鉱業株式会社 | Ceramic cylindrical sputtering target material and manufacturing method thereof |
KR20160085907A (en) * | 2012-08-22 | 2016-07-18 | 제이엑스금속주식회사 | Cylindrical indium sputtering target and process for producing same |
-
2014
- 2014-08-22 JP JP2014169807A patent/JP5887391B1/en active Active
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2015
- 2015-05-20 KR KR1020167016638A patent/KR20160082255A/en not_active Application Discontinuation
- 2015-05-20 CN CN201580004891.0A patent/CN105917022A/en active Pending
- 2015-05-20 WO PCT/JP2015/064530 patent/WO2016027534A1/en active Application Filing
- 2015-07-01 TW TW104121277A patent/TWI573890B/en active
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JPS6316935A (en) * | 1986-07-04 | 1988-01-23 | Toshiba Corp | Chuck for machining ceramics |
CN1836841A (en) * | 2005-03-22 | 2006-09-27 | 肖特股份公司 | Grinding method and grinder |
CN203751795U (en) * | 2014-03-25 | 2014-08-06 | 四川精瑞硬质合金科技发展有限公司 | Fixture for turning internal and external circular-arc-shaped surfaces of long shaft type cylindrical workpieces |
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CN113635214A (en) * | 2021-07-26 | 2021-11-12 | 先导薄膜材料(广东)有限公司 | Sputtering target grinding device and machining method |
CN114394818A (en) * | 2022-02-10 | 2022-04-26 | 江苏东玖光电科技有限公司 | Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio |
CN114394818B (en) * | 2022-02-10 | 2022-10-18 | 江苏东玖光电科技有限公司 | Preparation method and manufacturing die of ITO (indium tin oxide) tubular target with large length-diameter ratio |
Also Published As
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JP2016044333A (en) | 2016-04-04 |
WO2016027534A1 (en) | 2016-02-25 |
JP5887391B1 (en) | 2016-03-16 |
TW201610199A (en) | 2016-03-16 |
TWI573890B (en) | 2017-03-11 |
KR20160082255A (en) | 2016-07-08 |
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