CN103177917A - Magnetron and magnetron sputtering device where magnetron is applied - Google Patents
Magnetron and magnetron sputtering device where magnetron is applied Download PDFInfo
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- CN103177917A CN103177917A CN2011104334347A CN201110433434A CN103177917A CN 103177917 A CN103177917 A CN 103177917A CN 2011104334347 A CN2011104334347 A CN 2011104334347A CN 201110433434 A CN201110433434 A CN 201110433434A CN 103177917 A CN103177917 A CN 103177917A
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Abstract
The invention provides a magnetron and a magnetron sputtering device where the magnetron is applied. The magnetron comprises an outer magnetic pole and an inner magnetic pole which are opposite in polarities. The outer magnetic pole is in a closed ring shape on the section perpendicular to the center line of the outer magnetic pole, the inner magnetic pole is arranged in a cavity formed by surrounding of the ring-shaped outer magnetic pole, the inner magnetic pole comprises more than three auxiliary inner magnetic poles, the more than three auxiliary inner magnetic poles are arranged around the center line of the outer magnetic pole, and accordingly channels corresponding to the number of the auxiliary inner magnetic poles are formed between the outer magnetic pole and the inner magnetic pole. The magnetron can improve target corrosion evenness, and accordingly the target utilization rate is improved.
Description
Technical field
The present invention relates to the microelectronic processing technique field, particularly, relate to a kind of magnetron and use the magnetron sputtering apparatus of this magnetron.
Background technology
Magnetic control sputtering device is to collide with the device of deposition of material on workpiece to be machined that will sputter from target by the particle in plasma and target.In actual applications, for the efficient that improves sputter and the utilance of target, back at target is provided with magnetron, utilize magnetic field that magnetron produces to extend the movement locus of electronics, increase the probability of electronics and process gas (as argon gas) collision, thereby improve the density of plasma, and then improve the efficient of sputter and the utilance of target.
Fig. 1 a is the longitudinal section view of existing a kind of magnetron.See also Fig. 1 a, this magnetron comprises opposite polarity outer magnetic pole 1 and internal magnetic pole 2, can be with the plasma constraint at target material surface by the magnetic field that outer magnetic pole 1 and internal magnetic pole 2 form.The kidney shape track that is shaped as closure on the radial section of interval region 3 at magnetron that forms between outer magnetic pole 1 and internal magnetic pole 2.During use, magnetron rotates around pivot 4, and whole target material surface is scanned.Fig. 1 b utilizes the magnetron in Fig. 1 a to carry out corrosion curve after experimental simulation scanning to target.Wherein, ordinate represents the corrosion depth of target; The abscissa of corrosion curve represents that target center is to the distance at edge.As shown in Fig. 1 b, the point 132,134,130,136 on corrosion curve, the corrosion depth of 138 position targets are relatively dark, and be especially the darkest in the corrosion depth of point 136 position targets and corrosion area is very large.Learn thus, when the magnetron in employing Fig. 1 a scanned target, the uniformity of target erosion was relatively poor, causes the utilance of target lower.
For this reason, the difficult problem of pendulum in face of those skilled in the art is exactly how can design a kind of magnetron, makes the uniformity of target erosion get a promotion.
Summary of the invention
The present invention is intended to solve at least one of technical problem that exists in prior art, the magnetron sputtering apparatus that has proposed a kind of magnetron and used this magnetron, and it can improve the uniformity of target erosion.
For realizing that purpose of the present invention provides a kind of magnetron, comprise opposite polarity outer magnetic pole and internal magnetic pole, on the cross section perpendicular to the center line of described outer magnetic pole, described outer magnetic pole is closed annular, described internal magnetic pole be arranged on described annular outer magnetic pole in the cavity that forms, wherein, described internal magnetic pole comprises sub-internal magnetic pole more than three, described more than three sub-internal magnetic pole around the center line setting of described outer magnetic pole, thereby form between described outer magnetic pole and internal magnetic pole and described sub-internal magnetic pole quantity passage accordingly.
Wherein, described sub-internal magnetic pole be arranged on equably described outer magnetic pole center line around.
Wherein, the quantity of described sub-internal magnetic pole is three.
Wherein, be provided with on the inwall of described outer magnetic pole towards the outstanding protuberance of its centerline direction, described protuberance becomes the quantity sub-cavity corresponding with the quantity of described sub-internal magnetic pole with the interior separation of described outer magnetic pole, a described sub-internal magnetic pole is set in each described sub-cavity, thereby forms between described outer magnetic pole and internal magnetic pole and described sub-internal magnetic pole quantity circular passage accordingly.
Wherein, described sub-internal magnetic pole is perpendicular to being shaped as " ginkgo leaf " shape or " water chestnut " shape or fan-shaped on the cross section of the center line of described outer magnetic pole.
Wherein, described internal magnetic pole comprises internal magnetic pole body and a plurality of the first magnet, and described the first magnet evenly arranges along the profile of described internal magnetic pole body; Described outer magnetic pole comprises outer magnetic pole body and a plurality of the second magnet, described the second magnet evenly arranges along the profile of described outer magnetic pole body, and the polarity that is arranged on the first magnet on described internal magnetic pole body is opposite with the polarity of the second magnet on being arranged on described outer magnetic pole body.
Wherein, described the first magnet and described the second magnet are magnet.
Wherein, the width of the described passage between described outer magnetic pole and described internal magnetic pole is 20～30mm.
Preferably, the width of the described passage between described outer magnetic pole and described internal magnetic pole is 25.4mm.
The present invention also provides a kind of magnetron sputtering apparatus, and the magnetron that comprises target and be arranged at the target top, described magnetron is characterized in that in order to described target material surface is scanned, described magnetron employing above-mentioned magnetron provided by the invention.
The present invention has following beneficial effect:
Magnetron provided by the invention, it is by arranging the sub-internal magnetic pole more than three around the center line of outer magnetic pole, to form the passage corresponding with sub-internal magnetic pole quantity between outer magnetic pole and internal magnetic pole, this not only can improve the uniformity of target erosion, thereby improve the utilance of target, and can shorten the length of the interval region between outer magnetic pole and internal magnetic pole, thereby can shorten the running orbit of electronics in plasma, ion, and then can reduce starter and the sputtering pressure of keeping plasma.
Magnetron sputtering apparatus provided by the invention, it is by adopting above-mentioned magnetron, not only can improve the uniformity of target erosion, thereby improve the utilance of target, and can shorten the length of interval region, thereby can shorten the running orbit of electronics in plasma, ion, and then can reduce starter and the sputtering pressure of keeping plasma.
Description of drawings
Fig. 1 a is the profile of existing a kind of magnetron;
Fig. 1 b utilizes the magnetron in Fig. 1 a to carry out corrosion curve after experimental simulation scanning to target;
Fig. 2 is the longitudinal section view of magnetron provided by the invention;
Fig. 3 is for carrying out corrosion curve after experimental simulation scanning to magnetron provided by the invention to target; And
Fig. 4 is the schematic diagram of arranging of the sub-internal magnetic pole of magnetron provided by the invention.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, magnetron provided by the invention and the magnetron sputtering apparatus of using this magnetron are described in detail.
Fig. 2 is the longitudinal section view of magnetron provided by the invention.See also Fig. 2, magnetron provided by the invention comprises opposite polarity outer magnetic pole 40 and internal magnetic pole, and wherein, internal magnetic pole comprises internal magnetic pole body and a plurality of the first magnet 51, and the first magnet 51 evenly arranges along the profile of internal magnetic pole body; Outer magnetic pole 40 comprises outer magnetic pole body and a plurality of the second magnet 43, and the second magnet 43 evenly arranges along the profile of outer magnetic pole body.And the first magnet 51 that is arranged on the internal magnetic pole body is opposite with the polarity that is arranged on the second magnet 43 on the outer magnetic pole body, produces magnetic field in order to the end at internal magnetic pole body and outer magnetic pole body.The first magnet 51 and the second magnet 43 can adopt material as magnetic in tools such as magnet to make.
In the present embodiment, in outer magnetic pole 40 radially cross section on (that is, perpendicular to the cross section of the center line 41 of outer magnetic pole 40), outer magnetic pole 40 be shaped as closed annular, this annular outer magnetic pole 40 is around forming a cavity.Be provided with three towards the outstanding protuberance 42 of its center line 41 on the inwall of outer magnetic pole 40, the cavity that outer magnetic pole 40 is surrounded by protuberance 42 is separated into three sub-cavitys.Be provided with the second magnet 43 on protuberance 42, and the second magnet 43 arranges evenly along the profile of protuberance 42.
Internal magnetic pole comprises three sub-internal magnetic poles 50, and the shape approximation of sub-internal magnetic pole 50 on its cross section radially is " ginkgo leaf " shape.Three sub-internal magnetic poles 50 are arranged in three sub-cavitys accordingly,, in every sub-cavity, a sub-internal magnetic pole 50 are set that is, form three circular passages 52 thereby make between internal magnetic pole and outer magnetic pole 40.Make by three sub-internal magnetic poles 50 and form three circular passages 52 that length is shorter between internal magnetic pole and outer magnetic pole 40, this not only can improve the uniformity of target erosion, thereby improves the utilance of target; And can shorten the running orbit of electronics in plasma, ion, thereby can reduce starter and keep the sputtering pressure of plasma.
The present embodiment can be regulated by the size of regulating sub-internal magnetic pole 50 width of circular passage 52, thereby makes the design of magnetron more flexible.In the present embodiment, the width of circular passage 52 is 20～30mm, can obtain in the situation that the width of circular passage is 25.4mm by simulation, the Corrosion results of target is better, but, those skilled in the art knows, and always there are some errors in real experimental result and analog result.The circular passage that arranges so not only can reduce starter and keep the sputtering pressure of plasma, and can improve the uniformity of target erosion, thereby improves the utilance of target.
Fig. 3 is for carrying out corrosion curve after experimental simulation scanning to magnetron provided by the invention to target.See also Fig. 3, the ordinate of corrosion curve represents the corrosion depth of target; The abscissa of corrosion curve represents that target center is to the distance at edge.As can be seen from Figure 3, the difference of the corrosion depth of target each position obviously reduces, and this shows and adopt magnetron scanning target material surface that the present embodiment provides can improve the uniformity of target erosion, thereby can improve the utilance of target.
Need to prove, in the present embodiment, internal magnetic pole comprises three sub-internal magnetic poles 50.In fact internal magnetic pole can comprise the sub-internal magnetic pole 50 more than three.As long as the sub-internal magnetic pole 50 more than three is set in the cavity that outer magnetic pole 40 surrounds, and sub-internal magnetic pole 50 is arranged on outer magnetic pole 40 center line 41 around, can obtain length shorter circular passage 52, thereby realize that the present invention reduces starter and keeps the purpose of plasma air pressure.
In addition, in the present embodiment, intersect by paracentral position at outer magnetic pole 40 three circular passages 52, that is, there is a shared zone 53 in three circular passages 52, yet the present invention is not limited thereto.Three circular passages 52 can be also separate circular passages, that is to say, whether circular passage 52 is independent, do not affect and realize purpose of the present invention, as long as circular passage 52 do not form a continuous circular passage, namely avoid forming a continuous length long circular passage and all can realize purpose of the present invention.
In addition, in the present embodiment, the shape of three sub-internal magnetic poles 50 is similar, vary in size, yet the present invention is not limited thereto.Shape and the size of the sub-internal magnetic pole 50 of the present invention can be identical, also can be different.In other words, the shape of sub-internal magnetic pole 50 and size do not affect the purpose that the present invention reduces starter and keeps the sputtering pressure of plasma.As shown in Figure 4, be the schematic diagram of arranging of the sub-internal magnetic pole of magnetron provided by the invention.Three sub-internal magnetic pole 20 shape and size are identical, and be evenly distributed in outer magnetic pole center line 11 around.
Also need to prove, in the present embodiment, the shape approximation of sub-internal magnetic pole 50 on its radial section of magnetron is in " ginkgo leaf " shape shown in Fig. 2.But be not limited in actual applications this, the shape of sub-internal magnetic pole 50 on its radial section can also be " water chestnut " shape, other shape such as fan-shaped.Also need to prove, in actual applications, the shape of outer magnetic pole on its radial section is not limited to the shape shown in the present embodiment, its can for the suitable any closed annular of the shape of internal magnetic pole.And between outer magnetic pole and internal magnetic pole, the width of formed circular passage in each position can equate or unequal.The circular passage all can be adjusted according to the Corrosion results of target at the width of each position, thereby realizes process optimization.
In addition, although the passage that forms between the sub-internal magnetic pole 50 of the present embodiment and outer magnetic pole 40 is the circular passage, the present invention is not limited to the circular passage.The passage that forms between sub-internal magnetic pole 50 and outer magnetic pole 40 can be also the passage of other than ring type, as being the passage of arc.
Also need to prove, in actual applications, when magnetron scanned whole target material surface, its rotating shaft can overlap with the center line of outer magnetic pole, also can rotating shaft be arranged on other positions of disalignment according to the Corrosion results of target.
By test simulation, the modification of above-described embodiment all can obtain the corrosion curve that is similar to Fig. 3, thereby the modification that shows above-described embodiment all can improve the uniformity of target erosion, and then improves the utilance of target.
In sum, the above-mentioned magnetron that the present embodiment provides, it is by arranging the sub-internal magnetic pole more than three around the center line of outer magnetic pole, to form the passage corresponding with sub-internal magnetic pole quantity between outer magnetic pole and internal magnetic pole, this not only can improve the uniformity of target erosion, thereby improve the utilance of target, and can shorten the length of the interval region between outer magnetic pole and internal magnetic pole, thereby can shorten the running orbit of electronics in plasma, ion, and then can reduce starter and the sputtering pressure of keeping plasma.
The present invention also provides a kind of magnetron sputtering apparatus, the magnetron that it comprises target and is arranged at target top, and wherein, magnetron has adopted above-mentioned magnetron that the present embodiment provides in order to target material surface is scanned.
The above-mentioned magnetron sputtering apparatus that the present embodiment provides, it is by adopting above-mentioned magnetron, not only can improve the uniformity of target erosion, thereby improve the utilance of target, and can shorten the length of interval region, thereby can shorten the running orbit of electronics in plasma, ion, and then can reduce starter and the sputtering pressure of keeping plasma.
Be understandable that, above execution mode is only the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement also are considered as protection scope of the present invention.
Claims (10)
1. magnetron, comprise opposite polarity outer magnetic pole and internal magnetic pole, on the cross section perpendicular to the center line of described outer magnetic pole, described outer magnetic pole is closed annular, described internal magnetic pole be arranged on described annular outer magnetic pole in the cavity that forms, it is characterized in that, described internal magnetic pole comprises sub-internal magnetic pole more than three, described more than three sub-internal magnetic pole around the center line setting of described outer magnetic pole, thereby form between described outer magnetic pole and internal magnetic pole and described sub-internal magnetic pole quantity passage accordingly.
2. magnetron according to claim 1, is characterized in that, described sub-internal magnetic pole be arranged on equably described outer magnetic pole center line around.
3. magnetron according to claim 2, is characterized in that, the quantity of described sub-internal magnetic pole is three.
4. magnetron according to claim 1, it is characterized in that, be provided with on the inwall of described outer magnetic pole towards the outstanding protuberance of its centerline direction, described protuberance becomes the quantity sub-cavity corresponding with the quantity of described sub-internal magnetic pole with the interior separation of described outer magnetic pole, a described sub-internal magnetic pole is set in each described sub-cavity, thereby forms between described outer magnetic pole and internal magnetic pole and described sub-internal magnetic pole quantity circular passage accordingly.
5. magnetron according to claim 1, is characterized in that, described sub-internal magnetic pole is perpendicular to being shaped as " ginkgo leaf " shape or " water chestnut " shape or fan-shaped on the cross section of the center line of described outer magnetic pole.
6. magnetron according to claim 1, is characterized in that, described internal magnetic pole comprises internal magnetic pole body and a plurality of the first magnet, and described the first magnet evenly arranges along the profile of described internal magnetic pole body; Described outer magnetic pole comprises outer magnetic pole body and a plurality of the second magnet, described the second magnet evenly arranges along the profile of described outer magnetic pole body, and the polarity that is arranged on the first magnet on described internal magnetic pole body is opposite with the polarity of the second magnet on being arranged on described outer magnetic pole body.
7. magnetron according to claim 6, is characterized in that, described the first magnet and described the second magnet are magnet.
8. magnetron according to claim 1, is characterized in that, the width of the described passage between described outer magnetic pole and described internal magnetic pole is 20～30mm.
9. magnetron according to claim 8, is characterized in that, the width of the described passage between described outer magnetic pole and described internal magnetic pole is 25.4mm.
10. magnetron sputtering apparatus, the magnetron that comprises target and be arranged at the target top, described magnetron is characterized in that in order to described target material surface is scanned, and described magnetron adopts the described magnetron of any one in claim 1-9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110433434.7A CN103177917B (en) | 2011-12-21 | 2011-12-21 | A kind of magnetron and apply the magnetron sputtering apparatus of this magnetron |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110433434.7A CN103177917B (en) | 2011-12-21 | 2011-12-21 | A kind of magnetron and apply the magnetron sputtering apparatus of this magnetron |
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| CN103177917A true CN103177917A (en) | 2013-06-26 |
| CN103177917B CN103177917B (en) | 2015-10-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106609352A (en) * | 2015-10-27 | 2017-05-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering device and operation method thereof |
| CN107154330A (en) * | 2016-03-04 | 2017-09-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | The magnetron sputtering apparatus of magnetron and the application magnetron |
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| EP0479189A1 (en) * | 1990-09-29 | 1992-04-08 | Tokyo Electron Limited | Magnetron plasma processing apparatus |
| CN1978697A (en) * | 2005-11-11 | 2007-06-13 | 亚升技术公司 | Magnetron source having increased usage life |
| CN1997768A (en) * | 2005-01-05 | 2007-07-11 | 应用材料股份有限公司 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN101553595A (en) * | 2005-07-25 | 2009-10-07 | 应用材料股份有限公司 | Method and apparatus for sputtering onto large flat panels |
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2011
- 2011-12-21 CN CN201110433434.7A patent/CN103177917B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0479189A1 (en) * | 1990-09-29 | 1992-04-08 | Tokyo Electron Limited | Magnetron plasma processing apparatus |
| CN1997768A (en) * | 2005-01-05 | 2007-07-11 | 应用材料股份有限公司 | Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry |
| CN101553595A (en) * | 2005-07-25 | 2009-10-07 | 应用材料股份有限公司 | Method and apparatus for sputtering onto large flat panels |
| CN1978697A (en) * | 2005-11-11 | 2007-06-13 | 亚升技术公司 | Magnetron source having increased usage life |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106609352A (en) * | 2015-10-27 | 2017-05-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering device and operation method thereof |
| WO2017071046A1 (en) * | 2015-10-27 | 2017-05-04 | Beijing Nmc Co., Ltd. | Apparatus for sputtering and operation method thereof |
| US10309007B2 (en) | 2015-10-27 | 2019-06-04 | Beijing Naura Microelectronics Equipment Co., Ltd. | Apparatus for sputtering and operation method thereof |
| CN107154330A (en) * | 2016-03-04 | 2017-09-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | The magnetron sputtering apparatus of magnetron and the application magnetron |
| CN107154330B (en) * | 2016-03-04 | 2019-01-18 | 北京北方华创微电子装备有限公司 | The magnetron sputtering apparatus of magnetron and the application magnetron |
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| CN103177917B (en) | 2015-10-21 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing, Chaoyang District Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |