KR20150138948A

KR20150138948A - Apparatus for sputtering

Info

Publication number: KR20150138948A
Application number: KR1020140065986A
Authority: KR
Inventors: 최승호
Original assignee: 삼성디스플레이 주식회사
Priority date: 2014-05-30
Filing date: 2014-05-30
Publication date: 2015-12-11

Abstract

A sputtering apparatus capable of providing a uniform deposition effect is provided. A sputtering apparatus includes a chamber, a first magnet unit and a second magnet unit disposed opposite to each other in the chamber interior space and disposed to face each other with a first target and a second target, the first target and the second target interposed therebetween, And a power source for applying a current to each of the first target and the second target, wherein the first magnet unit and the second magnet unit are rotated in a first cycle, the current of the power source vibrates in a second cycle, The first period and the second period are a multiple of each other.

Description

[0001] APPARATUS FOR SPUTTERING [0002]

The present invention relates to a sputtering apparatus, and more particularly, to a rotating cylindrical sputtering apparatus.

Sputtering, which is one of the process technologies, is widely used as a film of any material regardless of the type of the substrate material in that a thin film can be formed with a relatively simple device safely without using a toxic gas. Sputtering is a method of forming a glow discharge of an inert gas in a vacuum to cause atoms to collide with a cathode-biased target so that atoms of the target are released by kinetic energy transfer. That is, by attaching a magnet to the target back surface to form a magnetic field perpendicular to the electric field, movement of electrons can be restricted around the target and the movement path can be extended to increase the sputtering efficiency. In addition, when a reactive gas as well as an inert gas is used as a process gas, a thin film that has reacted with a reactive gas, which is not a general metal thin film, can be deposited. For example, when O ₂ is used as a reactive gas, a metal oxide can be deposited as a thin film.

In this reactive sputtering apparatus, the state of the target surface is very important. That is, as the reaction proceeds in the chamber filled with the reactive gas, the surface of the target is gradually oxidized, and thus the sputter rate can be reduced. The oxide formed on the surface of the target can be removed by sputtering in a space filled with only inert gas without reactive gas (pre-sputtering). However, in the case of pre-sputtering, the process can not proceed and the operation rate is lowered.

Accordingly, a problem to be solved by the present invention is to provide a sputtering apparatus capable of preventing a reduction in the sputter rate and a decrease in the operating rate due to free sputtering.

Accordingly, an object of the present invention is to provide a sputtering apparatus capable of simultaneously performing a sputtering process and a free sputtering process.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a method of manufacturing the same.

According to an aspect of the present invention, there is provided a sputtering apparatus including a first region, a second region opposite to the first region, and a second region disposed between the first region and the second region, A target disposed in the third region, a magnetic field inducing member disposed in opposition to the inside of the target, and a magnet disposed between the magnetic field induction members, wherein the chamber includes a third region communicating with the second region, , The first region is a region into which the first gas flows, and the second region is a region into which the second gas different from the first gas flows.

Here, the first gas may be a reactive gas, and the second gas may be an inert gas.

The magnet and the magnetic field inducing member are fixed to the target, and the target may be rotated clockwise or counterclockwise.

The magnet may be arranged in parallel with a center line crossing a center point of one surface of the target, and the magnetic field inducing member may be arranged in the same direction as the magnet.

A power supply for supplying a discharge current to the target, a first gas supply unit for supplying the first gas, and a second gas supply unit for supplying the second gas.

The thickness of the magnetic field inducing member may be at least twice the thickness of the magnet.

The target may be a cathode electrode, and the chamber may be an anode electrode.

Also, the magnets may include a first sub-magnet and a second sub-magnet arranged in a line and separated from each other by a predetermined distance, and the thickness of the magnet may be five times or more the thickness of the magnetic field inducing member.

According to another aspect of the present invention, there is provided a sputtering apparatus including a first region, a second region facing the first region, and a second region disposed between the first region and the second region, A target disposed in each of the plurality of third regions, a magnetic field inducing member disposed inside of the target so as to face each other, and a magnetic field guiding member disposed between the magnetic field guiding members Wherein the first region is a region into which a first gas is introduced and the second region is a region into which a second gas different from the first gas is introduced.

Here, the first gas may be a reactive gas and the second gas may be an inert gas.

The target disposed in the one third region may be a cathode electrode, and the target disposed in the other third region may be an anode electrode.

Wherein the magnet and the magnetic field inducing member are fixed to the target,

The target may be rotated clockwise or counterclockwise.

The details of other embodiments are included in the detailed description and drawings.

The embodiments of the present invention have at least the following effects.

The sputtering process and the free sputtering can be performed at the same time, so that it is possible to prevent the sputter rate from being lowered and the operation rate from being lowered simultaneously.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the specification.

1 is a cross-sectional view of a sputtering apparatus according to an embodiment of the present invention.
2 is a view showing a magnetic field of a magnet formed inside a conventional circular target.
3 is a view showing the magnetic field of the magnet formed inside the circular target according to the present embodiment.
4 is a view showing the relationship between the thickness of the magnetic field inducing member and the intensity of the magnetic field.
5 is a cross-sectional view of a target according to an embodiment of the present invention.
6 is a cross-sectional view of a sputtering apparatus according to another embodiment of the present invention.
7 is a view showing lines of magnetic force formed by magnets of a target according to another embodiment of the present invention.
8 is a cross-sectional view of a sputtering apparatus according to another embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and the manner of achieving them, will be apparent from and elucidated with reference to the embodiments described hereinafter in conjunction with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

It is to be understood that elements or layers are referred to as being "on " other elements or layers, including both intervening layers or other elements directly on or in between. Like reference numerals refer to like elements throughout the specification.

Although the first, second, etc. are used to describe various components, it goes without saying that these components are not limited by these terms. These terms are used only to distinguish one component from another. Therefore, it goes without saying that the first component mentioned below may be the second component within the technical scope of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a cross-sectional view of a sputtering apparatus according to an embodiment of the present invention.

Referring to FIG. 1, a sputtering apparatus 10 includes a chamber 110, a target 120, a magnet 130, a magnetic field inducing member 140, and a power source unit 150.

The chamber 110 may be a closed space, and the inside of the chamber 110 may be in a vacuum state. The shape and material of the chamber 110 are not limited to specific ones, and the shape, size, and material of the chamber 110 may vary depending on the process can be changed.

The chamber 110 may include a first region S1, a second region S2, and a third region S3. The first region S1 and the second region S2 may be formed opposite to each other and may not directly communicate with each other. That is, the third region S3 may be disposed between the first region S1 and the second region S2, and the first region S1 and the second region S2 may be disposed through the third region S3. Can communicate with each other.

The first region S1 may be a region where the sputtering process proceeds. That is, a substrate transferring member (not shown) may be formed on one side of the first region S1. The substrate transferring member can fix the substrate (s) to prevent deformation, distortion, and the like of the substrate (s) that may occur during the sputtering process. Further, the substrate transferring member may transfer the substrate s in the first direction D1. That is, the substrate s is transferred from the outside of the chamber 110 to the inside of the chamber 110 along the first direction D1 by the substrate transfer member, and is moved along the first direction D1 after the sputtering process And may be discharged to the outside of the chamber 110 again. The first region S1 may be connected to the first gas supply unit AI1 through the gas supply pipe L2. The first gas supply unit AI1 can supply the first substrate A1 to the first region S1. That is, the first region S1 may be a region into which the first base A1 flows. Here, the first substrate A1 may be a reactive gas. The reactive gas may be oxygen (O ₂ ), but is not limited thereto. The gas supply pipe L2 may be disposed adjacent to the third region S3 in the first region S1 for easy reaction between the reactive gas and the film deposition particles emitted from the surface of the target 120, It is not. The film forming particles and the reactive gas react with each other in the first region S1 to form a thin film layer on the substrate s. This will be described later in more detail.

The second region S2 may be a region in which a pre-sputtering process is performed. That is, the second region S2 may be a region where a foreign substance or an oxidizing substance on the surface of the target 120 is removed. The anti-reflection plate 160 may be formed on the other side of the second area S2. That is, the deposition plate 160 and the substrate s may be disposed opposite to each other with the third region S3 therebetween. The barrier plate 160 may be a structure having a large mesh, a mesh or a large surface roughness, and it is possible to prevent a foreign substance or an oxidized substance removed in the pre-sputtering process from being deposited in the second region S2. The second region S2 may be connected to the second gas supply unit AI2 through the gas supply pipe L2. And the second gas supply unit AI2 can supply the second substrate A2 to the second region S2. That is, the second region S2 may be a region into which the second base A2 flows. Here, the second substrate A2 may be an inert gas. The inert gas may be argon (Ar) or nitrogen (N ₂ ), but is not limited thereto. The inert gas may be used to discharge the plasma. Here, the gas supply line L2 may be disposed adjacent to the third region S3 in the second region S2 for easy plasma discharge, but is not limited thereto. The generated plasma may discharge a foreign substance or an oxidizing substance formed on the surface of the target 120 to the second region S2 and the released foreign substance or oxidizing substance may be adsorbed on the blocking plate 160 and removed.

The third region S3 can communicate the first region S1 and the second region S2. That is, the second base A2 flowing into the second region S2 may flow into the first region S1 through the third region S3. The first region S1 may be connected to the vacuum pump AP through the gas outlet pipe L1. The vacuum pump AP evacuates the gas inside the chamber 110 to the outside. The inside of the chamber 110 can be formed in a vacuum state, and an environment in which a plasma can be formed can be formed. The vacuum pump AP may generate a pressure difference between the first region S1 and the second region S2 by exhausting the gas in the first region S1 to the outside of the chamber 110. [ Accordingly, the second base A2 of the second region S2 can flow into the first region S1, but the first base A1 of the first region S1 does not flow into the second region S2 And the second region S2 may include only the second base A2 and the first region S1 may be a mixture of the first base A1 and the second base A2. The mixing ratio of the first base A1 and the second base A2 in the first region S1 may vary depending on process conditions.

In addition, the target 120 may be disposed in the third region S3. The target 120 may be in a cylindrical shape. That is, one surface of the target 120 may be donut-shaped as shown in FIG. 1, but is not limited thereto. The target 120 may include a target support (not shown) and a deposition (not shown) formed on the outer surface of the target. The target support may receive a discharge current from the power source 150 and may transmit the discharge current to the target 120. Accordingly, the target 120 can induce a glow discharge of the second substrate A2. The plasma generated by the glow discharge may cause the deposition of the film on the outer surface of the target 120 in a vapor phase, and the particles of the released target film may be diffused and deposited on the substrate (s). Further, the target 120 can be supported and fixed by the target support, and the target 120 can be rotated in the clockwise direction R1. The rotation speed and rotation angle of the target 120 may vary depending on processing conditions, and are not limited to a specific speed and angle. That is, the third area S3 may be a space in which the target 120 can rotate. However, the present invention is not limited thereto, and the target 120 may be rotated counterclockwise as well. The thin film of the substrate (s) can be more uniformly formed by the rotation of the target (120). In addition, a part of the surface of the target 120 in which the oxide material is formed by the sputtering process in the first region S1 may be located in the second region S2 by rotation, The material can be removed.

The power supply 150 may supply a discharge current to the target 120. [ Here, the target 120 may be a cathode electrode, and a part of the chamber 110 may be an anode electrode, and one end thereof may be connected to a ground. The power source 150 can supply a waveform of a current having a periodicity and can supply a current capable of preventing the plasma spread phenomenon. In an exemplary embodiment, the power source 150 may apply a low frequency alternating current (AC) or DC pulse (DC-Pulse) of 20 to 80 KHz, but is not limited thereto.

The magnet 130 may be disposed within the target 120. The magnet 130 may be disposed within the target 120 alongside a centerline that intersects a center point of one surface of the target 120. [ The length of the magnet 130 may be less than the inner diameter of the target 120. [ The shape of the magnet 130 may be a bar shape extending in one direction, and one end and the other end of the magnet 130 may have different polarities. The magnet 130 may form a magnetic field so as to provide more effective sputtering.

The magnetic field inducing member 140 may be disposed inside the target 120 so as to face each other. The magnets 130 may be disposed between the magnetic field inducing members 140. Hereinafter, the relationship between the magnetic field inducing member 140 and the magnet 130 will be described with reference to FIGS.

FIG. 2 is a view showing a magnetic field of a magnet formed inside a conventional circular target, FIG. 3 is a view showing a magnetic field of a magnet formed inside a circular target according to the present embodiment, FIG. 4 is a cross- And FIG.

Referring to FIG. 2, it can be seen that a magnet formed inside a conventional circular target has a strong magnetic field in the A region, and a weak magnetic field is formed in the A 'region facing the A region. As a result, it can be seen that normal plasma is discharged in region A, but discharge of plasma does not occur in region A '. That is, sputtering can be performed only on the A region. It can also be seen that a strong magnetic field can be formed in the region B perpendicular to the region A. Where the magnetic field of region A can be a horizontal magnetic field H and the magnetic field of region B can be a vertical magnetic field V. [ Here, the horizontal magnetic field H means a magnetic field formed in the same direction as the direction in which the magnets are arranged, and the vertical magnetic field V may mean a magnetic field formed in a direction perpendicular to the direction in which the magnets are arranged. If the vertical magnetic field V is strongly formed, the plasma can not be concentrated in the region where the horizontal magnetic field H is formed, and accordingly, the discharge density is low and sputtering may not easily occur.

Referring to FIG. 3, the magnet 130 of the present embodiment may be a rod magnet extending in one direction, and a horizontal magnetic field H is formed at one end and the other end of the magnet 130, respectively. It can also be seen that the vertical magnetic field V formed at the top and bottom of the magnet 130 has a lower magnetic density than the horizontal magnetic field H. The perpendicular magnetic field V may be formed by the magnetic field guiding member 140 to have a low magnetic density. That is, the magnetic field inducing member 140 may be disposed at the upper and lower portions of the magnet 130, respectively, at the same distance from the magnet 130, and the magnetic field inducing member 140 may be disposed in the same direction as the magnet 130 Lt; / RTI > The magnetic field inducing member 140 may be a block formed of a magnetic material. That is, the magnetic field inducing member 140 may be formed of nickel (Ni), iron (Fe), stainless steel (SUS 400 series), or the like, but is not limited thereto. The magnetic field inducing member 140 can guide the vertical magnetic field formed at the upper and lower portions of the magnet 130 toward the distal end of the magnet 130 to thereby increase the magnetic density of the end portion of the magnet 130 . Therefore, the magnet 130 can be formed with a stronger horizontal magnetic field H, and the plasma discharge density can be increased, so that a more effective sputtering process can be performed. The sputtering apparatus 10 according to the present invention can effectively perform both the sputtering process of the first region S1 and the pre-sputtering process of the second region S2 by the strong horizontal magnetic field H. The intensity of the horizontal magnetic field H can be determined according to the thickness of the magnetic field inducing member 140 and the thickness of the magnet 130. [ That is, when the magnetic field inducing member 140 is formed too thick, the strength of the horizontal magnetic field H becomes weak and the strength of the vertical magnetic field V becomes strong, which may be disadvantageous for horizontal plasma formation.

4, the magnitude of the magnetic field V and the intensity of the horizontal magnetic field H are changed according to the thickness of the magnetic field guiding member 140 based on that the thickness of the magnet 130 is 10 mm . Formation of the above plasma may be most effective when the intensity of the horizontal magnetic field H is 500 Gauss and the intensity of the vertical magnetic field L is 100 Gauss. The thickness of the magnet 130 corresponding to the intensity of the magnetic field may be 10 mm and the thickness of the magnetic field inducing member 140 may be 20 mm or more. That is, it can be most effective when the thickness of the magnetic field inducing member 140 is twice or more the thickness of the magnet 130. However, the present invention is not limited to the above-described embodiments. Hereinafter, with reference to FIG. 5, the effect that the target 120 according to the embodiment of the present invention can provide will be described in more detail.

5 is a cross-sectional view of a target according to an embodiment of the present invention.

Referring to FIG. 5, the target 120 to which a current is supplied from the power source 150 may generate a plasma by inducing a glow discharge of the second substrate. At this time, the target 120 of this embodiment can form a strong horizontal magnetic field H in both the first region S1 and the second region S2. As described above, the first region S1 may be a state in which a first gas, which is a reactive gas, and a second gas, which is an inert gas, are present together. In the second region S2, only a second gas, which is an inert gas, Lt; / RTI > The horizontal magnetic field H strongly formed in the first region S1 and the second region S2 can constrain the motion of the plasma. That is, electrons and ions that are electrified rotate about the horizontal magnetic field H, and the probability of collision between electrons and neutral particles may increase. So that the plasma density in the reaction space can be higher. The positive ions of the plasma are formed by depositing the oxide film or the foreign substance P of the target 120 corresponding to the film forming particle E and the second region S2 of the target 120 corresponding to the first region S1, (S1) and the second region (S2). At this time, particles having a high energy such as electrons can not be affected by the plasma and affect the substrate s. However, the film particles E having a relatively low energy are diffused to the side of the first region S1, s. < / RTI > In addition, since the first gas is introduced into the first region S1, the first gas S1 can be deposited on the substrate s by reacting with the deposition particles E. The emitted oxidizing substance or foreign matter P may diffuse to the side of the second region S2 and may be adsorbed on the blocking plate 160 and removed. That is, in the target 120 of the present invention, the sputtering process can be effectively performed in the first region S1 and the free sputtering process can be effectively performed in the second region S2 due to the strongly formed horizontal magnetic field H. Since the target 120 can rotate clockwise or counterclockwise, the foreign matter or oxidizing material formed on the surface of the target 120 through the sputtering process in the first region S1 can be rotated through the second region S2 ), And the foreign matter or the oxidized material can be easily removed by a pre-sputtering process. That is, the sputtering apparatus 10 of the present invention can simultaneously perform the sputtering process and the free sputtering process in different regions where a strong horizontal magnetic field is formed, thereby preventing a reduction in the operating rate of the sputtering apparatus. Since the oxide material formed on the surface of the target 120 in the sputtering process can be easily removed in the second region S2 by the rotation of the target, the state of the target 120 can be maintained in a steady state, Can be prevented.

Hereinafter, a sputtering apparatus 20 according to another embodiment of the present invention will be described.

FIG. 6 is a cross-sectional view of a sputtering apparatus according to another embodiment of the present invention, and FIG. 7 is a view showing a line of magnetic force formed by a magnet of a target according to another embodiment of the present invention.

Referring to FIGS. 6 and 7, the magnet 230 of the sputtering apparatus 20 according to another embodiment of the present invention includes a first sub-magnet 230a and a second sub-magnet 230b.

The first sub-magnet 230a and the second sub-magnet 230b may be arranged in a line and spaced apart from each other by a certain distance to be disposed inside the target 220. [ The first sub-magnet 230a and the second sub-magnet 230b may be bar magnets extending in one direction, and one end and the other end of each bar may have polarities different from each other. At this time, the polarity of one end of the opposed first sub-magnet 230a and the other end of the second sub-magnet 230b may be different from each other. 6, one end of the first sub-magnet 230a may be an S-pole, and the other end of the second sub-magnet 230b may be an N-pole. However, the present invention is not limited thereto.

7, since the first sub-magnet 230a and the second sub-magnet 230b are spaced apart from each other by a predetermined distance, a magnetic field line may be formed in the central region of the target 220 by the distance . The intensity of the vertical magnetic field generated at the upper and lower portions of the target 220 can be weakened. That is, even if the thickness of the magnetic field guiding member 240 is not thick, the intensity of the vertical magnetic field can be weakened. Here, the thickness of the first sub-magnet 230a and the second sub-magnet 230b may be at least five times the thickness of the magnetic field inducing member 240. That is, the sputtering apparatus 20 according to another embodiment of the present invention may include a magnet spaced apart from each other to provide an effect of weakening the strength of the vertical magnetic field even if the thickness of the magnetic field inducing member is reduced.

The description of the other sputtering methods is substantially the same as the description of the sputtering apparatus 10 of FIGS. 1 to 5 having the same names, and thus the description thereof will be omitted.

Hereinafter, a sputtering apparatus 30 according to another embodiment of the present invention will be described.

8 is a cross-sectional view of a sputtering apparatus according to another embodiment of the present invention.

Referring to FIG. 8, the sputtering apparatus 30 includes a chamber 310, a target 320, a magnet 330, a magnetic field inducing member 340, and a power source unit 350.

The chamber 310 may be a closed space, and the inside of the chamber 310 may be in a vacuum state. The chamber 310 may provide a space in which the configurations of the sputtering apparatus 30 can be arranged. The chamber 310 may include a first region S1, a second region S2, and a plurality of third regions S3a and S3b. The first region S1 and the second region S2 may be formed opposite to each other and may not directly communicate with each other. That is, a plurality of third regions S3 may be disposed between the first region S1 and the second region S2, and the plurality of third regions S3 may be disposed between the first region S1 and the second region S2, The region S2 can be communicated.

The first region S1 may be a region where the sputtering process proceeds. That is, a substrate transferring member (not shown) may be formed on one side of the first region S1. The substrate transferring member can fix the substrate (s) to prevent deformation, distortion, and the like of the substrate (s) that may occur during the sputtering process. Further, the substrate transferring member may transfer the substrate s in the first direction D1. That is, the substrate s is transferred from the outside of the chamber 310 to the inside of the chamber 310 along the first direction D1 by the substrate transfer member and is moved along the first direction D1 after the sputtering process And may be discharged to the outside of the chamber 310 again. The first region S1 may be connected to the first gas supply unit AI1 through the gas supply pipe L2. The first gas supply unit AI1 can supply the first substrate A1 to the first region S1. That is, the first region S1 may be a region into which the first base A1 flows. Here, the first substrate A1 may be a reactive gas. The reactive gas may be oxygen (O ₂ ), but is not limited thereto. The gas supply pipe L2 may be disposed adjacent to the plurality of third regions S3a and S3b in the first region S1 for easy reaction between the reactive gas and the film deposition particles emitted from the surface of the target 120 However, the present invention is not limited thereto. The film forming particles and the reactive gas react with each other in the first region S1 to form a thin film layer on the substrate s.

The second region S2 may be a region in which a pre-sputtering process is performed. That is, the second region S2 may be a region where a foreign substance or an oxidizing substance on the surface of the target 120 is removed. The anti-reflection plate 160 may be formed on the other side of the second area S2. That is, the deposition plate 160 and the substrate s may be disposed opposite to each other with a plurality of third regions S3a and S3b interposed therebetween. The barrier plate 160 may be a structure having a large mesh, a mesh or a large surface roughness, and it is possible to prevent a foreign substance or an oxidized substance removed in the pre-sputtering process from being deposited in the second region S2. The second region S2 may be connected to the second gas supply unit AI2 through the gas supply pipe L2. And the second gas supply unit AI2 can supply the second substrate A2 to the second region S2. That is, the second region S2 may be a region into which the second base A2 flows. Here, the second substrate A2 may be an inert gas. The inert gas may be argon (Ar) or nitrogen (N ₂ ), but is not limited thereto. The inert gas may be used to discharge the plasma. Here, the gas supply line L2 may be disposed adjacent to the plurality of third regions S3a and S3b in the second region S2 for easy plasma discharge, but the present invention is not limited thereto. The generated plasma may discharge a foreign substance or an oxidizing substance formed on the surface of the target 320 to the second region S2 and the released foreign substance or oxidizing substance may be adsorbed on the blocking plate 360 and removed.

The plurality of third regions S3a and S3b can communicate the first region S1 and the second region S2. That is, the second base A2 flowing into the second region S2 may flow into the first region S1 through the plurality of third regions S3a and S3b. The first region S1 may be connected to the vacuum pump AP through the gas outlet pipe L1. The vacuum pump AP evacuates the gas inside the chamber 110 to the outside. The inside of the chamber 110 can be formed in a vacuum state, and an environment in which a plasma can be formed can be formed. The vacuum pump AP may generate a pressure difference between the first region S1 and the second region S2 by exhausting the gas in the first region S1 to the outside of the chamber 110. [ Accordingly, the second base A2 of the second region S2 can flow into the first region S1, but the first base A1 of the first region S1 does not flow into the second region S2 And the second region S2 may include only the second base A2 and the first region S1 may be a mixture of the first base A1 and the second base A2. The mixing ratio of the first base A1 and the second base A2 in the first region S1 may vary depending on process conditions.

A target 320 may be disposed in the plurality of third regions S3a and S3b. The target 320 may be in a cylindrical shape. That is, one surface of the target 320 may be donut-shaped as shown in FIG. 8, but is not limited thereto. The target 320 may include a target support (not shown) and a deposition (not shown) formed on the outer surface of the target. The target support may receive a discharge current from the power source 350 and may transmit the discharge current to the target 320. Accordingly, the target 320 can induce a glow discharge of the second substrate A2. The plasma generated by the glow discharge may cause the deposition of the film on the outer surface of the target 320 in a vapor phase, and the particles of the emitted target film may be diffused and deposited on the substrate (s). Further, the target 320 can be supported and fixed by the target support, and the target 320 can be rotated in the clockwise direction R1. The rotation speed and rotation angle of the target 320 may vary depending on processing conditions, and are not limited to specific speeds and angles. That is, the plurality of third regions S3a and S3b may be a space in which the target 320 can rotate. However, the present invention is not limited thereto, and the target 320 may be rotated counterclockwise as well. By the rotation of the target 320, the thin film of the substrate s can be formed more uniformly. In addition, a part of the surface of the target 320 in which the oxide material is formed by the sputtering process in the first region S1 may be located in the second region S2 by rotation, The material can be removed.

The magnet 330 may be disposed within the target 320. The magnet 330 may be disposed within the target 320 alongside a center line that intersects the center point of one surface of the target 320. [ The length of the magnet 330 may be smaller than the inner diameter of the target 320. [ The shape of the magnet 330 may be a rod shape extending in one direction, and one end and the other end of the magnet 330 may have different polarities. The magnet 330 can form a magnetic field so as to provide more effective sputtering.

The magnetic field inducing member 340 may be disposed inside the target 320 so as to face each other. The magnet 330 may be disposed between the magnetic field inducing members 340.

The power supply 350 may supply a discharge current to the target 320. [ The power supply 350 can supply a waveform of a current having a periodicity and can supply a current capable of preventing the plasma spread phenomenon. In an exemplary embodiment, the power source 350 may apply a low frequency alternating current (AC) or DC pulse (DC-Pulse) of 20 to 80 KHz, but is not limited thereto. The target 320a disposed in one third region S3a may be a cathode electrode and the target 320b disposed in another third region S3b may be an anode electrode. That is, other configurations disposed in the chamber 310 and the chamber 310, for example, the substrate s, may be independent of the electrode connection. Thus, the substrate s can be floating, so that the damage of the substrate s by the electrode connection can be minimized. That is, the damage of the substrate s that can occur in the process can be minimized.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

10, 20: sputtering apparatus 110, 210: chamber
120, 220: Opposite target 130, 230: Magnet unit
140, 240: Power source AI: Gas injector
AP: Vacuum pump

Claims

A chamber including a first region, a second region facing the first region, and a third region disposed between the first region and the second region, the third region communicating the first region and the second region;
A target disposed in the third region;
A magnetic field inducing member disposed inside the target so as to face each other; And
And a magnet disposed between the magnetic field induction members,
Wherein the first region is a region into which a first gas is introduced and the second region is a region into which a second gas different from the first gas is introduced.

The method according to claim 1,
Wherein the first gas is a reactive gas and the second gas is an inert gas.

The method according to claim 1,
Wherein the magnet and the magnetic field inducing member are fixed to the target,
Wherein the target is rotated clockwise or counterclockwise.

The method according to claim 1,
The magnet is disposed alongside a center line that intersects a center point of one surface of the target,
Wherein the magnetic field inducing member is arranged in the same direction as the magnet.

The method according to claim 1,
A power source for supplying a discharge current to the target,
A first gas supply unit for supplying the first gas;
And a second gas supply unit for supplying the second gas.

The method according to claim 1,
Wherein the thickness of the magnetic field inducing member is at least twice the thickness of the magnet.

The method according to claim 1,
Wherein the target is a cathode electrode and the chamber is an anode electrode.

The method according to claim 1,
Wherein the magnets comprise a first sub-magnet and a second sub-magnet arranged in a line and separated from each other by a certain distance.

9. The method of claim 8,
Wherein the thickness of the magnet is at least five times the thickness of the magnetic field inducing member.

A chamber including a first region, a second region facing the first region, and a plurality of third regions disposed between the first region and the second region and communicating the first region and the second region;
A target disposed in each of the plurality of third regions;
A magnetic field inducing member disposed inside the target so as to face each other; And
And a magnet disposed between the magnetic field induction members,
Wherein the first region is a region into which a first gas is introduced and the second region is a region into which a second gas different from the first gas is introduced.

11. The method of claim 10,
Wherein the first gas is a reactive gas and the second gas is an inert gas.

11. The method of claim 10,
Wherein the target disposed in the one third region is a cathode electrode and the target disposed in another third region is an anode electrode.

11. The method of claim 10,
Wherein the magnet and the magnetic field inducing member are fixed to the target,
Wherein the target is rotated clockwise or counterclockwise.