TW201612979A - Pattern shrink methods - Google Patents

Pattern shrink methods

Info

Publication number
TW201612979A
TW201612979A TW104124707A TW104124707A TW201612979A TW 201612979 A TW201612979 A TW 201612979A TW 104124707 A TW104124707 A TW 104124707A TW 104124707 A TW104124707 A TW 104124707A TW 201612979 A TW201612979 A TW 201612979A
Authority
TW
Taiwan
Prior art keywords
shrink
pattern
composition
resist pattern
providing
Prior art date
Application number
TW104124707A
Other languages
English (en)
Other versions
TWI588896B (zh
Inventor
Phillip D Hustad
Jong-Keun Park
Jin-Wuk Sung
James Heejun Park
Original Assignee
Rohm & Haas Elect Mat
Dow Global Technologies Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas Elect Mat, Dow Global Technologies Llc filed Critical Rohm & Haas Elect Mat
Publication of TW201612979A publication Critical patent/TW201612979A/zh
Application granted granted Critical
Publication of TWI588896B publication Critical patent/TWI588896B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/325—Non-aqueous compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
TW104124707A 2014-07-31 2015-07-30 圖案收縮方法 TWI588896B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462031718P 2014-07-31 2014-07-31
US14/726,238 US9448483B2 (en) 2014-07-31 2015-05-29 Pattern shrink methods

Publications (2)

Publication Number Publication Date
TW201612979A true TW201612979A (en) 2016-04-01
TWI588896B TWI588896B (zh) 2017-06-21

Family

ID=55179900

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104124707A TWI588896B (zh) 2014-07-31 2015-07-30 圖案收縮方法

Country Status (5)

Country Link
US (1) US9448483B2 (zh)
JP (1) JP6204418B2 (zh)
KR (1) KR101742575B1 (zh)
CN (1) CN105319844A (zh)
TW (1) TWI588896B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI636321B (zh) * 2016-07-29 2018-09-21 Rohm And Haas Electronic Materials Llc 使用共聚物多層電解質的負型顯影方法及由其製備的製品
TWI747942B (zh) * 2016-12-15 2021-12-01 台灣積體電路製造股份有限公司 半導體裝置的製作方法

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6722433B2 (ja) * 2015-09-30 2020-07-15 東京応化工業株式会社 レジストパターン形成方法及びパターン厚肉化用ポリマー組成物
JP6726449B2 (ja) * 2015-08-28 2020-07-22 東京応化工業株式会社 レジストパターン形成方法、シュリンク剤組成物及びシュリンク剤組成物の製造方法
TWI603145B (zh) 2014-12-31 2017-10-21 羅門哈斯電子材料有限公司 光微影方法
US9810990B2 (en) * 2015-03-16 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical treatment for lithography improvement in a negative tone development process
JP6503206B2 (ja) 2015-03-19 2019-04-17 東京応化工業株式会社 レジストパターン修復方法
TWI615460B (zh) 2015-06-03 2018-02-21 羅門哈斯電子材料有限公司 用於圖案處理的組合物和方法
TWI627220B (zh) 2015-06-03 2018-06-21 羅門哈斯電子材料有限公司 用於圖案處理之組合物及方法
TWI617900B (zh) 2015-06-03 2018-03-11 羅門哈斯電子材料有限公司 圖案處理方法
CN106249540A (zh) 2015-06-03 2016-12-21 陶氏环球技术有限责任公司 图案处理方法
TWI612108B (zh) 2015-10-31 2018-01-21 Rohm And Haas Electronic Materials Llc 嵌段共聚物及圖案處理組合物以及方法
US10162265B2 (en) 2015-12-09 2018-12-25 Rohm And Haas Electronic Materials Llc Pattern treatment methods
JP2017129774A (ja) * 2016-01-21 2017-07-27 凸版印刷株式会社 緑色感光性着色組成物、それを用いたカラーフィルタ及びカラー表示装置
US10036957B2 (en) * 2016-01-29 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. Post development treatment method and material for shrinking critical dimension of photoresist layer
US10056256B2 (en) * 2016-03-16 2018-08-21 Taiwan Semiconductor Manufacturing Co., Ltd. Method of priming photoresist before application of a shrink material in a lithography process
US9910355B2 (en) * 2016-07-29 2018-03-06 Rohm And Haas Electronic Materials Llc Method of negative tone development using a copolymer multilayer electrolyte and articles made therefrom
US10133179B2 (en) * 2016-07-29 2018-11-20 Rohm And Haas Electronic Materials Llc Pattern treatment methods
JP6757626B2 (ja) * 2016-08-19 2020-09-23 東京応化工業株式会社 レジストパターン形成方法、及びパターン厚肉化用ポリマー組成物
WO2018044727A1 (en) * 2016-08-29 2018-03-08 Tokyo Electron Limited Method of anisotropic extraction of silicon nitride mandrel for fabrication of self-aligned block structures
US10727055B2 (en) * 2017-02-10 2020-07-28 International Business Machines Corporation Method to increase the lithographic process window of extreme ultra violet negative tone development resists
US11003074B2 (en) * 2017-05-01 2021-05-11 Rohm And Haas Electronic Materials Llc Pattern formation methods and photoresist pattern overcoat compositions
US10684545B2 (en) * 2017-11-17 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming semiconductor structure by patterning assist layer having polymer
US10566194B2 (en) * 2018-05-07 2020-02-18 Lam Research Corporation Selective deposition of etch-stop layer for enhanced patterning
WO2021071857A1 (en) * 2019-10-07 2021-04-15 The Regents Of The University Of California Facilitating controlled molecular assembly of nanoscale structures via dynamic confinement of solvent
CN115842033B (zh) * 2023-02-20 2023-05-12 湖北江城芯片中试服务有限公司 半导体制作方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6638441B2 (en) * 2002-01-07 2003-10-28 Macronix International Co., Ltd. Method for pitch reduction
JP3675434B2 (ja) 2002-10-10 2005-07-27 東京応化工業株式会社 微細パターンの形成方法
JP4657883B2 (ja) * 2005-10-19 2011-03-23 東京応化工業株式会社 レジストパターン形成方法
JP4828204B2 (ja) * 2005-10-21 2011-11-30 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法、並びに高分子化合物
JP4859437B2 (ja) * 2005-10-25 2012-01-25 大阪有機化学工業株式会社 被膜形成用樹脂組成物
KR100737851B1 (ko) * 2006-07-07 2007-07-12 제일모직주식회사 미세패턴 형성용 수지 조성물 및 이를 이용한 미세패턴형성방법
WO2008140119A1 (ja) 2007-05-15 2008-11-20 Fujifilm Corporation パターン形成方法
US8426313B2 (en) * 2008-03-21 2013-04-23 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
US8821978B2 (en) 2009-12-18 2014-09-02 International Business Machines Corporation Methods of directed self-assembly and layered structures formed therefrom
JP5758263B2 (ja) * 2011-10-11 2015-08-05 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
JP5793399B2 (ja) 2011-11-04 2015-10-14 富士フイルム株式会社 パターン形成方法及びその方法に用いる架橋層形成用組成物
JP5979660B2 (ja) 2012-02-09 2016-08-24 東京応化工業株式会社 コンタクトホールパターンの形成方法
JP5891075B2 (ja) 2012-03-08 2016-03-22 東京応化工業株式会社 ブロックコポリマー含有組成物及びパターンの縮小方法
JPWO2014003023A1 (ja) * 2012-06-29 2016-06-02 Jsr株式会社 パターン形成用組成物及びパターン形成方法
JP6065786B2 (ja) * 2012-09-14 2017-01-25 信越化学工業株式会社 化学増幅レジスト材料及びパターン形成方法
JP6384966B2 (ja) 2013-02-25 2018-09-05 ザ ユニバーシティー オブ クイーンズランド リソグラフィーによって生成された形体
JP6239833B2 (ja) * 2013-02-26 2017-11-29 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ 微細レジストパターン形成用組成物およびそれを用いたパターン形成方法
KR20140120212A (ko) 2013-04-02 2014-10-13 주식회사 동진쎄미켐 미세패턴 형성용 코팅 조성물 및 이를 이용한 미세패턴 형성방법
CN104425225A (zh) * 2013-09-04 2015-03-18 中芯国际集成电路制造(上海)有限公司 三重图形的形成方法
JP6134619B2 (ja) 2013-09-13 2017-05-24 富士フイルム株式会社 パターン形成方法、及び、電子デバイスの製造方法
JP6233240B2 (ja) * 2013-09-26 2017-11-22 信越化学工業株式会社 パターン形成方法
KR102198023B1 (ko) 2013-10-30 2021-01-05 삼성전자주식회사 반도체 소자의 패턴 형성방법
JP6240489B2 (ja) * 2013-12-06 2017-11-29 富士フイルム株式会社 パターン形成方法、及び電子デバイスの製造方法
JP6459759B2 (ja) * 2014-05-26 2019-01-30 信越化学工業株式会社 パターン形成方法及びシュリンク剤

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI636321B (zh) * 2016-07-29 2018-09-21 Rohm And Haas Electronic Materials Llc 使用共聚物多層電解質的負型顯影方法及由其製備的製品
TWI747942B (zh) * 2016-12-15 2021-12-01 台灣積體電路製造股份有限公司 半導體裝置的製作方法

Also Published As

Publication number Publication date
CN105319844A (zh) 2016-02-10
TWI588896B (zh) 2017-06-21
JP2016035576A (ja) 2016-03-17
US20160033869A1 (en) 2016-02-04
JP6204418B2 (ja) 2017-09-27
KR20160016648A (ko) 2016-02-15
US9448483B2 (en) 2016-09-20
KR101742575B1 (ko) 2017-06-05

Similar Documents

Publication Publication Date Title
TW201612979A (en) Pattern shrink methods
WO2014105233A3 (en) Processes for multi-layer devices utilizing layer transfer
EA201390169A1 (ru) Способ получения материала, содержащего основу, снабженную покрытием
MX2014007900A (es) Dispositivos electroluminiscentes y su fabricacion.
WO2012047042A3 (ko) 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법
WO2010059857A3 (en) Bottom up plating by organic surface passivation and differential plating retardation
NZ718864A (en) Method of preparing a photochromic optical article using an organic solvent pretreatment and photochromic coating
TW201612012A (en) Display support substrate, color filter using the same and its manufacture method thereof, organic EL element and manufacture method thereof, and flexible organic EL display
EP2657767A3 (en) Patterning process
TW201130183A (en) Method of manufacturing high resolution organic thin film pattern
TW201129636A (en) Silicon layers formed from polymer-modified liquid silane formulations
IN2014CN03520A (zh)
WO2012071289A3 (en) Semiconductor inks, films and processes for preparing coated substrates and photovoltaic devices
WO2011087591A3 (en) Multiple surface finishes for microelectronic package substrates
TW200641543A (en) Underlayer coating forming composition for lithography containing compound having protected carboxy group
AR072728A1 (es) Composiciones de revestimiento para una resistencia de bloque mejorada
WO2014021405A3 (ja) 金属光沢を有する膜及びこれが形成されてなる物品並びに金属光沢を有する膜の製造方法
EP1998222A3 (en) Coating compositions
PH12018500798B1 (en) First protective film-forming sheet, method for forming first protective film, and method for manufacturing semiconductor chip
MX2013001351A (es) Proceso para preparar dispositivos y peliculas en base a nanoparticulas conductivas.
WO2011158119A3 (ja) シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
WO2015156894A3 (en) Carbon nanotube-coated substrates and methods of making the same
TW201612987A (en) Method for manufacturing semiconductor device
PL412520A1 (pl) Sposób wytwarzania folii grafenowej o zadanej liczbie warstw grafenu
WO2011137133A3 (en) Semiconducting devices and methods of preparing

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees