TW201543541A - Photosensitive insulating film for forming via hole, and method for forming via hole using the same - Google Patents
Photosensitive insulating film for forming via hole, and method for forming via hole using the same Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B17/00—Insulators or insulating bodies characterised by their form
- H01B17/56—Insulating bodies
- H01B17/62—Insulating-layers or insulating-films on metal bodies
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
Description
本申請案主張2014年5月7日在韓國智慧財產局申請的韓國專利申請案第10-2014-0054421號的權益，所述專利申請案的揭露內容以引用的方式併入本文中。 The present application claims the benefit of the Korean Patent Application No. 10-2014-005442, filed on May 7, 2014 in the Korean Intellectual Property Office, the disclosure of which is hereby incorporated by reference.
本揭露是關於形成介層孔用的感光性絕緣膜以及使用所述絕緣膜形成介層孔的方法。 The present disclosure relates to a photosensitive insulating film for forming a via hole and a method of forming a via hole using the insulating film.
印刷電路板通常是藉由以下方式來製造：在由諸如聚合物樹脂或其類似者的材料形成的基板上堆疊銅薄板；以及形成圖案以使得經提供以形成配線的銅薄板對應於設計為使用諸如圖案印刷製程、蝕刻製程及其類似者的方法而形成的電路。 A printed circuit board is usually manufactured by stacking a copper thin plate on a substrate formed of a material such as a polymer resin or the like; and forming a pattern such that a copper thin plate provided to form wiring corresponds to design use A circuit formed by a method such as a pattern printing process, an etching process, and the like.
最近，根據電子技術的發展，印刷電路板的密度已逐漸 增大。因此，印刷電路板的大小及厚度已減小。同時，印刷電路板中所形成的介層窗的數目已增大。 Recently, according to the development of electronic technology, the density of printed circuit boards has gradually Increase. Therefore, the size and thickness of the printed circuit board have been reduced. At the same time, the number of vias formed in printed circuit boards has increased.
根據在印刷電路板中形成介層孔的現有方法，介層孔可藉由以下方式而形成：使作為多層印刷電路板的層間絕緣膜的環氧樹脂組成物固化以形成固化膜，接著進行雷射鑽孔製程或鑽尖製程。 According to the prior art method of forming a via hole in a printed circuit board, the via hole can be formed by curing an epoxy resin composition as an interlayer insulating film of a multilayer printed circuit board to form a cured film, followed by performing a ray Drilling process or drill tip process.
然而，因為印刷電路板中通常需要的介層孔的數目最近已增大至數萬至數十萬，所以針對雷射鑽孔製程或鑽尖製程，需要設施及時間的大的投資。 However, because the number of via holes typically required in printed circuit boards has recently increased to tens of thousands to hundreds of thousands, a large investment in facilities and time is required for laser drilling processes or drill tip processes.
因此，光微影方法已用於形成介層孔。此光微影方法為藉由以下方式而形成介層孔的技術：對環氧樹脂及其類似者進行改質，以及將光引發劑引入至其中，接著進行曝光與顯影製程。 Therefore, photolithography methods have been used to form via holes. This photolithography method is a technique of forming a via hole by modifying an epoxy resin and the like, and introducing a photoinitiator therein, followed by an exposure and development process.
光微影方法能夠同時形成多個孔；然而，取決於曝光量，可能在一些介層孔中出現開口缺陷，或取決於待形成的介層孔的形狀，可能在填孔電鍍製程期間出現缺陷。 The photolithography method can simultaneously form a plurality of holes; however, depending on the amount of exposure, opening defects may occur in some via holes, or depending on the shape of the via holes to be formed, defects may occur during the hole filling plating process .
(專利文獻1)日本專利特許公開第JP 2007-042395號 (Patent Document 1) Japanese Patent Laid-Open Publication No. JP 2007-042395
本揭露的例示性實施例可提供一種形成介層孔用的感光性絕緣膜，其能夠在經由曝光與顯影製程而形成所述介層孔時防止在所述介層孔中產生開口缺陷，同時允許所述介層孔具有有利 於在填孔電鍍製程期間防止產生缺陷的形狀，且本揭露的例示性實施例亦可提供一種使用所述絕緣膜形成介層孔的方法。 The exemplary embodiment of the present disclosure can provide a photosensitive insulating film for forming a via hole, which is capable of preventing opening defects in the via hole when forming the via hole through an exposure and development process, Allowing the via holes to be advantageous The shape of the defect is prevented during the hole-fill plating process, and the exemplary embodiment of the present disclosure may also provide a method of forming the via hole using the insulating film.
根據本揭露的例示性實施例，一種形成介層孔用的感光性絕緣膜可包含：基底基板(base substrate)；第一絕緣膜，形成於所述基底基板上；以及第二絕緣膜，形成於所述第一絕緣膜上，其中所述第一絕緣膜具有比所述第二絕緣膜的感光性高的感光性。 According to an exemplary embodiment of the present disclosure, a photosensitive insulating film for forming a via hole may include: a base substrate; a first insulating film formed on the base substrate; and a second insulating film formed The first insulating film has a photosensitive property higher than that of the second insulating film.
根據本揭露的另一例示性實施例，一種形成介層孔用的感光性絕緣膜可包含：基底基板；第一絕緣膜，形成於所述基底基板上；以及第二絕緣膜，形成於所述第一絕緣膜上，且具有比所述第一絕緣膜的感光性低的感光性，其中形成了穿透所述第一絕緣膜以及所述第二絕緣膜的介層孔，所述介層孔具有所述介層孔的上直徑大於其下直徑的錐形形狀。 According to another exemplary embodiment of the present disclosure, a photosensitive insulating film for forming a via hole may include: a base substrate; a first insulating film formed on the base substrate; and a second insulating film formed on the substrate On the first insulating film, and having a lower sensitivity than the first insulating film, wherein a via hole penetrating the first insulating film and the second insulating film is formed, The layer hole has a tapered shape in which the upper diameter of the via hole is larger than the lower diameter thereof.
所述介層孔的所述下直徑與所述介層孔的所述上直徑的比例可為0.6或0.6以上。 The ratio of the lower diameter of the via hole to the upper diameter of the via hole may be 0.6 or more.
根據本揭露的另一例示性實施例，一種形成介層孔的方法可包含：製備形成介層孔用的感光性絕緣膜，所述感光性絕緣膜包含基底基板、形成於所述基底基板上的第一絕緣膜以及形成於所述第一絕緣膜上的第二絕緣膜，所述第一絕緣膜具有比所述第二絕緣膜的感光性高的感光性；在所述感光性絕緣膜上形成經圖案化的罩幕，且執行曝光製程；以及將所述所曝光的感光性絕緣膜顯影。 According to another exemplary embodiment of the present disclosure, a method of forming a via hole may include: preparing a photosensitive insulating film for forming a via hole, the photosensitive insulating film including a base substrate, formed on the base substrate a first insulating film and a second insulating film formed on the first insulating film, the first insulating film having a higher sensitivity than the second insulating film; and the photosensitive insulating film A patterned mask is formed thereon, and an exposure process is performed; and the exposed photosensitive insulating film is developed.
10‧‧‧基底基板 10‧‧‧Base substrate
21‧‧‧第一絕緣膜 21‧‧‧First insulating film
22‧‧‧第二絕緣膜 22‧‧‧Second insulation film
23‧‧‧第一絕緣膜 23‧‧‧First insulating film
24‧‧‧第二絕緣膜 24‧‧‧Second insulation film
30‧‧‧介層孔 30‧‧‧Interlayer hole
40‧‧‧介層孔 40‧‧‧Interlayer hole
100‧‧‧感光性絕緣膜 100‧‧‧Photosensitive insulating film
r1‧‧‧上直徑 r 1 ‧‧‧Upper diameter
r2‧‧‧下直徑 r 2 ‧‧‧lower diameter
結合附圖，自以下詳細描述，將更清楚地理解本揭露的上述及其他態樣、特徵及優點。 The above and other aspects, features and advantages of the present disclosure will be more clearly understood from the following detailed description.
圖1為根據本揭露的例示性實施例的形成介層孔用的感光性絕緣膜的橫截面圖。 1 is a cross-sectional view of a photosensitive insulating film for forming a via hole according to an exemplary embodiment of the present disclosure.
圖2為根據本揭露的例示性實施例的其中形成有介層孔的感光性絕緣膜的橫截面圖。 2 is a cross-sectional view of a photosensitive insulating film in which a via hole is formed, according to an exemplary embodiment of the present disclosure.
圖3為在包含第二絕緣膜的絕緣膜中所形成的介層孔的橫截面圖，其中所述第二絕緣膜具有比第一絕緣膜的感光性高的感光性。 3 is a cross-sectional view of a via hole formed in an insulating film including a second insulating film, wherein the second insulating film has higher photosensitivity than that of the first insulating film.
圖4為根據本揭露的例示性實施例的其中形成有介層孔的感光性絕緣膜的橫截面圖，其說明介層孔的上直徑以及介層孔的下直徑。 4 is a cross-sectional view of a photosensitive insulating film in which via holes are formed, illustrating an upper diameter of a via hole and a lower diameter of a via hole, according to an exemplary embodiment of the present disclosure.
圖5至圖7為依序說明根據本揭露的例示性實施例的形成介層孔的方法的視圖。 5 through 7 are views sequentially illustrating a method of forming a via hole in accordance with an exemplary embodiment of the present disclosure.
圖8為說明在包含第二絕緣膜的絕緣膜中所形成的介層孔的掃描電子顯微鏡(SEM)相片，其中所述第二絕緣膜具有比第一絕緣膜的感光性高的感光性。 8 is a scanning electron microscope (SEM) photograph illustrating a via hole formed in an insulating film including a second insulating film, wherein the second insulating film has higher photosensitivity than that of the first insulating film.
圖9為說明根據本揭露的例示性實施例的其中形成有介層孔的感光性絕緣膜的橫截面的掃描電子顯微鏡(SEM)相片。 9 is a scanning electron microscope (SEM) photograph illustrating a cross section of a photosensitive insulating film in which a via hole is formed, according to an exemplary embodiment of the present disclosure.
圖10為說明根據本揭露的例示性實施例的其中形成有介層 孔的感光性絕緣膜的橫截面的掃描電子顯微鏡(SEM)相片。 FIG. 10 illustrates a layer formed therein in accordance with an exemplary embodiment of the present disclosure. A scanning electron microscope (SEM) photograph of a cross section of the photosensitive insulating film of the hole.
在下文中，將參看附圖來詳細描述本揭露的實施例。 Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.
然而，本揭露可按照許多不同形式來體現且不應解釋為限於本文所闡述的實施例。實情為，提供此等實施例，以使得本揭露將為全面且完整的，且將向熟習此項技術者完全傳達本揭露的範疇。 However, the present disclosure may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. The present invention is provided so that this disclosure will be thorough and complete, and the scope of the disclosure will be fully conveyed by those skilled in the art.
在附圖中，為了清楚起見，可能誇示了部件的形狀及尺寸，且相同參考數字將在全文用於表示相同或類似部件。 The shapes and sizes of the components may be exaggerated for the sake of clarity, and the same reference numerals will be used throughout the drawings to refer to the same or similar components.
圖1為根據本揭露的例示性實施例的形成介層孔用的感光性絕緣膜的橫截面圖。 1 is a cross-sectional view of a photosensitive insulating film for forming a via hole according to an exemplary embodiment of the present disclosure.
參看圖1，根據本揭露的例示性實施例的形成介層孔用的感光性絕緣膜100可包含：基底基板10；第一絕緣膜21，形成於基底基板10上；以及第二絕緣膜22，形成於第一絕緣膜21上，其中第一絕緣膜21具有比第二絕緣膜22的感光性高的感光性。 Referring to FIG. 1, a photosensitive insulating film 100 for forming a via hole according to an exemplary embodiment of the present disclosure may include: a base substrate 10; a first insulating film 21 formed on the base substrate 10; and a second insulating film 22 The first insulating film 21 is formed on the first insulating film 21, and the first insulating film 21 has higher photosensitivity than the second insulating film 22.
基底基板10只要可執行支撐功能便不受具體限制。舉例來說，基底基板10可含有聚對苯二甲酸乙二醇酯、聚乙烯、聚丙烯、聚碳酸酯及其類似者，且可具有5微米至100微米的厚度。 The base substrate 10 is not particularly limited as long as it can perform a supporting function. For example, the base substrate 10 may contain polyethylene terephthalate, polyethylene, polypropylene, polycarbonate, and the like, and may have a thickness of 5 micrometers to 100 micrometers.
第一絕緣膜21以及第二絕緣膜22可含有感光性材料，且其感光性可藉由調整光引發劑、光增強劑及其類似者的種類及含量來調整。 The first insulating film 21 and the second insulating film 22 may contain a photosensitive material, and the photosensitivity thereof can be adjusted by adjusting the kind and content of the photoinitiator, the light enhancer, and the like.
藉由形成具有比第二絕緣膜22的感光性高的感光性的第一絕緣膜21，介層孔的形狀可受到控制以使得在經由曝光與顯影製程而形成介層孔時以及在執行填孔電鍍製程時不會產生缺陷。 By forming the first insulating film 21 having a photosensitive property higher than that of the second insulating film 22, the shape of the via hole can be controlled so that when the via hole is formed through the exposure and development processes and during the filling No defects are produced during the hole plating process.
圖2為根據本揭露的例示性實施例的其中形成有介層孔的感光性絕緣膜的橫截面圖。 2 is a cross-sectional view of a photosensitive insulating film in which a via hole is formed, according to an exemplary embodiment of the present disclosure.
參看圖2，穿透第一絕緣膜21以及第二絕緣膜22的介層孔30可具有介層孔的上直徑大於其下直徑的錐形形狀。 Referring to FIG. 2, the via hole 30 penetrating the first insulating film 21 and the second insulating film 22 may have a tapered shape in which the upper diameter of the via hole is larger than the lower diameter thereof.
因為第一絕緣膜21的感光性比第二絕緣膜22的感光性大，所以當執行曝光製程時，具有高感光性的第一絕緣膜21比具有低感光性的第二絕緣膜22顯著地光固化，以使得介層孔30可形成為具有介層孔的上直徑大於其下直徑的錐形形狀。 Since the photosensitivity of the first insulating film 21 is larger than that of the second insulating film 22, when the exposure process is performed, the first insulating film 21 having high sensitivity is significantly more remarkable than the second insulating film 22 having low sensitivity. The light is cured such that the via hole 30 can be formed into a tapered shape having a via hole having an upper diameter larger than a lower diameter thereof.
圖3為在包含第二絕緣膜24的絕緣膜中所形成的介層孔的橫截面圖，其中所述第二絕緣膜24具有比第一絕緣膜23的感光性高的感光性。 3 is a cross-sectional view of a via hole formed in an insulating film including a second insulating film 24 having a photosensitive property higher than that of the first insulating film 23.
在第二絕緣膜24具有比第一絕緣膜23的感光性高的感光性的狀況下，第二絕緣膜24較顯著地光固化，以使得介層孔40可形成為具有介層孔的上直徑小於其下直徑的錐形形狀，如圖3所示。在對具有上述形狀的介層孔40執行填孔電鍍製程的狀況下，可由於非均勻電鍍而產生孔隙。 In the case where the second insulating film 24 has a photosensitive property higher than that of the first insulating film 23, the second insulating film 24 is photocured more remarkably, so that the via hole 40 can be formed to have a via hole. A tapered shape having a diameter smaller than its lower diameter, as shown in FIG. In the case where the hole-fill plating process is performed on the via hole 40 having the above shape, voids may be generated due to non-uniform plating.
因此，根據本揭露的例示性實施例，為了防止在執行填孔電鍍製程時產生缺陷，介層孔30可藉由形成具有比第二絕緣膜22的感光性高的感光性的第一絕緣膜21而具有介層孔的上直徑 大於其下直徑的錐形形狀。 Therefore, according to the exemplary embodiment of the present disclosure, in order to prevent defects from occurring in performing the hole-fill plating process, the via hole 30 may be formed by forming a first insulating film having higher sensitivity than that of the second insulating film 22. 21 and the upper diameter of the via hole A tapered shape that is larger than its lower diameter.
第一絕緣膜21與第二絕緣膜22之間的曝光量的差異可為100毫焦耳/平方公分(單位：mJ/cm2)至1000毫焦耳/平方公分。 The difference in exposure amount between the first insulating film 21 and the second insulating film 22 may be 100 mJ/cm 2 (unit: mJ/cm 2 ) to 1000 mJ/cm 2 .
當曝光量的差異小於100毫焦耳/平方公分時，定位於介層孔的下方部分中的第一絕緣膜21可能不充分地光固化，以致於可能在介層孔的下方部分中產生底切，或介層孔可能具有介層孔的上直徑小於其下直徑的錐形形狀，進而可能在填孔電鍍製程期間產生缺陷。當曝光量的差異超過1000毫焦耳/平方公分時，第一絕緣膜21可能過於光固化，以致於可能在介層孔中產生開口缺陷。 When the difference in exposure amount is less than 100 mJ/cm 2 , the first insulating film 21 positioned in the lower portion of the via hole may be insufficiently photocured, so that undercut may be generated in the lower portion of the via hole Or the via may have a tapered shape with the upper diameter of the via being smaller than its lower diameter, which may result in defects during the fill-through plating process. When the difference in exposure amount exceeds 1000 mJ/cm 2 , the first insulating film 21 may be excessively photocured so that opening defects may be generated in the via holes.
第一絕緣膜21與第二絕緣膜22之間的曝光量的差異可較佳為200毫焦耳/平方公分至500毫焦耳/平方公分。 The difference in exposure amount between the first insulating film 21 and the second insulating film 22 may preferably be 200 mJ/cm 2 to 500 mJ/cm 2 .
當曝光量的差異處於上述範圍內時，介層孔的下直徑r2與其上直徑r1的比例r2/r1可為0.6或0.6以上。此外，曝光與顯影製程之後的第一絕緣膜21以及第二絕緣膜22的厚度可為曝光與顯影製程之前的第一絕緣膜以及第二絕緣膜的厚度的70%或70%以上。 When the difference in the exposure amount in the above range, the dielectric layer hole diameter r 2 ratio of its diameter r 1 r 2 / r 1 may be 0.6 or more. Further, the thicknesses of the first insulating film 21 and the second insulating film 22 after the exposure and development process may be 70% or more of the thicknesses of the first insulating film and the second insulating film before the exposure and development process.
第一絕緣膜21可具有10微米至100微米的厚度，且第二絕緣膜22可具有1微米至50微米的厚度。 The first insulating film 21 may have a thickness of 10 μm to 100 μm, and the second insulating film 22 may have a thickness of 1 μm to 50 μm.
第一絕緣膜21與第二絕緣膜22之間的厚度比可為1：1至100：1。 The thickness ratio between the first insulating film 21 and the second insulating film 22 may be 1:1 to 100:1.
當第一絕緣膜21與第二絕緣膜22之間的厚度比滿足上 述範圍時，可防止在介層孔中產生開口缺陷，且可有效地形成具有其上直徑大於其下直徑的錐形形狀的介層孔。 When the thickness ratio between the first insulating film 21 and the second insulating film 22 is satisfied In the case of the range, it is possible to prevent the occurrence of the opening defect in the via hole, and it is possible to effectively form the via hole having the tapered shape whose upper diameter is larger than the lower diameter thereof.
圖4為根據本揭露的例示性實施例的其中形成有介層孔的感光性絕緣膜的橫截面圖，其說明介層孔的上直徑以及下直徑。 4 is a cross-sectional view of a photosensitive insulating film in which via holes are formed, illustrating an upper diameter and a lower diameter of a via hole, according to an exemplary embodiment of the present disclosure.
參看圖4，介層孔30的下直徑r2與其上直徑r1的比例r2/r1可為0.6或0.6以上。 Comparative Example 4, the diameter r of the via hole 30 and its diameter 2 r 1 r Referring to FIG 2 / r 1 may be 0.6 or more.
在比例r2/r1小於0.6的狀況下，介層孔30的下直徑r2可能過小，以致於可能在介層孔中產生開口缺陷，或可能在執行填孔電鍍製程時由於非均勻電鍍而產生孔隙。 In the case where the ratio r 2 /r 1 is less than 0.6, the lower diameter r 2 of the via hole 30 may be too small, so that opening defects may be generated in the via hole, or may be caused by non-uniform plating during the hole filling plating process. And the pores are produced.
為了防止在執行填孔電鍍製程時產生缺陷，介層孔可形成為具有介層孔30的上直徑r1大於其下直徑r2的錐形形狀，且比例r2/r1可滿足0.6r2/r1<1。 In order to prevent defects from occurring during the hole filling plating process, the via hole may be formed to have a tapered shape in which the upper diameter r 1 of the via hole 30 is larger than the lower diameter r 2 thereof, and the ratio r 2 /r 1 may satisfy 0.6. r 2 /r 1 <1.
藉由使第一絕緣膜21與第二絕緣膜22之間的曝光量的差異為200毫焦耳/平方公分至500毫焦耳/平方公分，可形成具有0.6或0.6以上的r2/r1的介層孔30。 By making the difference in exposure amount between the first insulating film 21 and the second insulating film 22 from 200 mJ/cm 2 to 500 mJ/cm 2 , r 2 /r 1 having 0.6 or more can be formed. Interlayer hole 30.
第一絕緣膜21以及第二絕緣膜22可更含有無機填料以改良物理性質，諸如，熱阻、強度及其類似者。 The first insulating film 21 and the second insulating film 22 may further contain an inorganic filler to improve physical properties such as heat resistance, strength, and the like.
只要無機填料為通常用作無機填料的電絕緣材料，無機填料便不受具體限制。舉例而言，無機填料可為選自由滑石、氧化矽、硫酸鋇以及氧化鈦組成的群組的至少一者。無機填料可具有10微米或10微米以下的直徑。當無機填料的直徑超過10微米時，可能不容易形成介層孔。 The inorganic filler is not particularly limited as long as the inorganic filler is an electrically insulating material which is generally used as an inorganic filler. For example, the inorganic filler may be at least one selected from the group consisting of talc, cerium oxide, barium sulfate, and titanium oxide. The inorganic filler may have a diameter of 10 microns or less. When the diameter of the inorganic filler exceeds 10 μm, it may not easily form a via hole.
圖5至圖7為依序說明根據本揭露的例示性實施例的形成介層孔的方法的視圖。 5 through 7 are views sequentially illustrating a method of forming a via hole in accordance with an exemplary embodiment of the present disclosure.
參看圖8，可製備根據本揭露的例示性實施例的形成介層孔用的感光性絕緣膜100，所述感光性絕緣膜100包含感光性高於第二絕緣膜22的感光性的第一絕緣膜21，可在形成介層孔用的感光性絕緣膜100上形成經圖案化的罩幕，且可執行曝光製程。 Referring to FIG. 8, a photosensitive insulating film 100 for forming a via hole according to an exemplary embodiment of the present disclosure may be prepared, the photosensitive insulating film 100 including a first photosensitive property higher than that of the second insulating film 22. The insulating film 21 can form a patterned mask on the photosensitive insulating film 100 for forming a via hole, and an exposure process can be performed.
用於執行曝光製程的UV波長不受具體限制。舉例而言，可通常使用350奈米至450奈米的UV波長來執行曝光製程。 The UV wavelength used to perform the exposure process is not specifically limited. For example, an exposure process can be performed using a UV wavelength of from 350 nm to 450 nm.
參看圖9，除了感光性絕緣膜100被經圖案化的罩幕所覆蓋且未被曝光的部分之外，可使形成介層孔用的經曝光的感光性絕緣膜100光固化。 Referring to Fig. 9, in addition to the portion of the photosensitive insulating film 100 covered by the patterned mask and not exposed, the exposed photosensitive insulating film 100 for forming the via hole can be photocured.
此處，與第二絕緣膜22相比，具有較高感光性的第一絕緣膜21可較廣泛地光固化。 Here, the first insulating film 21 having higher photosensitivity can be photocured more widely than the second insulating film 22.
參看圖10，可藉由將形成介層孔用的經曝光的感光性絕緣膜100顯影而形成介層孔30。 Referring to Fig. 10, a via hole 30 can be formed by developing the exposed photosensitive insulating film 100 for forming a via hole.
作為顯影製程中的顯影劑，可使用有機溶劑，或可使用混合有機溶劑或與水混合的有機溶劑，且在顯影劑中可含有至少一種界面活性劑。 As the developer in the developing process, an organic solvent may be used, or a mixed organic solvent or an organic solvent mixed with water may be used, and at least one surfactant may be contained in the developer.
可藉由選自由以下方法組成的群組的任一種方法來執行顯影製程：將顯影劑噴塗至絕緣膜上的方法；將絕緣膜浸漬於顯影劑中接著搖動的方法；以及將絕緣膜浸漬於顯影劑中接著進行超音波處理的方法。 The developing process may be performed by any one selected from the group consisting of: a method of spraying a developer onto an insulating film; a method of immersing the insulating film in a developer followed by shaking; and immersing the insulating film in A method of ultrasonic treatment is then carried out in the developer.
根據本揭露的例示性實施例的所根據用於形成介層孔的方法，可防止在介層孔中產生開口缺陷，且介層孔30可形成為具有介層孔的上直徑大於其下直徑的錐形形狀，以使得在執行填孔電鍍製程時防止缺陷。 According to the method for forming a via hole according to an exemplary embodiment of the present disclosure, opening defects can be prevented from being generated in the via hole, and the via hole 30 can be formed to have a via hole having an upper diameter larger than a lower diameter thereof The tapered shape is such that defects are prevented during the hole filling plating process.
圖8為在包含第二絕緣膜的絕緣膜中所形成的介層孔的掃描電子顯微鏡(SEM)相片，其中所述第二絕緣膜具有比第一絕緣膜的感光性高的感光性。如可見的，在介層孔的下方部分中產生底切。 8 is a scanning electron microscope (SEM) photograph of a via hole formed in an insulating film including a second insulating film, wherein the second insulating film has higher photosensitivity than the first insulating film. As can be seen, an undercut is created in the lower portion of the via.
圖9及圖10分別為說明根據本揭露的例示性實施例的其中形成有介層孔的感光性絕緣膜的橫截面的掃描電子顯微鏡(SEM)相片。 9 and 10 are scanning electron microscope (SEM) photographs illustrating a cross section of a photosensitive insulating film in which a via hole is formed, respectively, according to an exemplary embodiment of the present disclosure.
圖9說明第一絕緣膜與第二絕緣膜之間的曝光量的差異超過500毫焦耳/平方公分的狀況。此時，介層孔的下方部分中的第一絕緣膜過於固化，進而在介層孔中產生開口缺陷。因此，第一絕緣膜與第二絕緣膜之間的曝光量的差異可為200毫焦耳/平方公分至500毫焦耳/平方公分。 Fig. 9 illustrates a case where the difference in exposure amount between the first insulating film and the second insulating film exceeds 500 mJ/cm 2 . At this time, the first insulating film in the lower portion of the via hole is excessively cured, thereby generating an opening defect in the via hole. Therefore, the difference in exposure amount between the first insulating film and the second insulating film may be 200 mJ/cm 2 to 500 mJ/cm 2 .
圖10說明第一絕緣膜與第二絕緣膜之間的曝光量的差異為350毫焦耳/平方公分的狀況。此時，介層孔形成為具有介層孔的上直徑大於其下直徑的錐形形狀。因此，可在執行填孔電鍍製程時防止缺陷。 Fig. 10 illustrates a case where the difference in exposure amount between the first insulating film and the second insulating film is 350 mJ/cm 2 . At this time, the via hole is formed to have a tapered shape in which the upper diameter of the via hole is larger than the lower diameter thereof. Therefore, defects can be prevented during the hole filling plating process.
如上所述，根據本揭露的例示性實施例，形成介層孔用的感光性絕緣膜可在經由曝光與顯影製程而形成介層孔時防止在 介層孔中產生開口缺陷，且可允許介層孔形成為具有有利於在填孔電鍍製程期間防止產生缺陷的形狀。 As described above, according to the exemplary embodiment of the present disclosure, the photosensitive insulating film for forming the via hole can be prevented from being formed when the via hole is formed through the exposure and development processes An opening defect is generated in the via hole, and the via hole can be formed to have a shape that is advantageous for preventing generation of defects during the hole filling plating process.
雖然已展示且如上描述了例示性實施例，但熟習此項技術者將顯而易見的是，在不脫離如由隨附申請專利範圍界定的本發明的範疇的情況下，可進行修改以及變化。 While the exemplifying embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and variations can be made without departing from the scope of the invention as defined by the appended claims.
10‧‧‧基底基板 10‧‧‧Base substrate
21‧‧‧第一絕緣膜 21‧‧‧First insulating film
22‧‧‧第二絕緣膜 22‧‧‧Second insulation film
30‧‧‧介層孔 30‧‧‧Interlayer hole
r1、r2‧‧‧直徑 r 1 , r 2 ‧‧‧ diameter
Claims (18)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020140054421A KR20150127489A (en) | 2014-05-07 | 2014-05-07 | Photosensitization insulation film for forming via hole, and method for forming via hole using the same |
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| TW201543541A true TW201543541A (en) | 2015-11-16 |
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| TW103137525A TW201543541A (en) | 2014-05-07 | 2014-10-30 | Photosensitive insulating film for forming via hole, and method for forming via hole using the same |
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| Country | Link |
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| JP (1) | JP2015215585A (en) |
| KR (1) | KR20150127489A (en) |
| TW (1) | TW201543541A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI634590B (en) * | 2017-10-30 | 2018-09-01 | 世界先進積體電路股份有限公司 | Methods for fabricating semiconductor structures |
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| WO2017006517A1 (en) * | 2015-07-06 | 2017-01-12 | パナソニックＩｐマネジメント株式会社 | Multilayer printed wiring board and method for manufacturing same |
| KR102381986B1 (en) | 2016-10-28 | 2022-03-31 | 삼성전기주식회사 | Photosensitization insulaton film and component comprising the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57192027A (en) * | 1981-05-20 | 1982-11-26 | Matsushita Electric Ind Co Ltd | Forming method of photosensitive resin window |
| JPS62229244A (en) * | 1986-03-31 | 1987-10-08 | Fujitsu Ltd | Formation of resist pattern |
| JPH04301846A (en) * | 1991-03-29 | 1992-10-26 | Toshiba Corp | Manufacture of mask substrate for exposure |
| JP2000012541A (en) * | 1998-06-19 | 2000-01-14 | Toshiba Corp | Manufacture of semiconductor device |
| JP3879478B2 (en) * | 2001-10-25 | 2007-02-14 | Ｔｄｋ株式会社 | Method for forming resist pattern, patterning method using the resist pattern, and method for manufacturing thin film magnetic head |
| JP2005191284A (en) * | 2003-12-25 | 2005-07-14 | Fuji Photo Film Co Ltd | Manufacturing method of printed wiring board |
| JP2006030971A (en) * | 2004-06-15 | 2006-02-02 | Techno Network Shikoku Co Ltd | Photolithographic method |
| JP4376706B2 (en) * | 2004-06-30 | 2009-12-02 | 東京応化工業株式会社 | Method for forming plated product using negative photoresist composition |
-
2014
- 2014-05-07 KR KR1020140054421A patent/KR20150127489A/en not_active Application Discontinuation
- 2014-10-24 JP JP2014216967A patent/JP2015215585A/en active Pending
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Cited By (1)
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| TWI634590B (en) * | 2017-10-30 | 2018-09-01 | 世界先進積體電路股份有限公司 | Methods for fabricating semiconductor structures |
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| KR20150127489A (en) | 2015-11-17 |
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