TW201542873A - 連續鉑層之無電沉積 - Google Patents
連續鉑層之無電沉積 Download PDFInfo
- Publication number
- TW201542873A TW201542873A TW104104496A TW104104496A TW201542873A TW 201542873 A TW201542873 A TW 201542873A TW 104104496 A TW104104496 A TW 104104496A TW 104104496 A TW104104496 A TW 104104496A TW 201542873 A TW201542873 A TW 201542873A
- Authority
- TW
- Taiwan
- Prior art keywords
- solution
- platinum
- ions
- providing
- containing layer
- Prior art date
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 161
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 58
- 230000008021 deposition Effects 0.000 title claims description 16
- 230000006641 stabilisation Effects 0.000 claims abstract description 58
- 238000011105 stabilization Methods 0.000 claims abstract description 58
- 239000000203 mixture Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007772 electroless plating Methods 0.000 claims abstract description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000000243 solution Substances 0.000 claims description 110
- 150000002500 ions Chemical class 0.000 claims description 41
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 21
- -1 platinum ions Chemical class 0.000 claims description 16
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 claims description 15
- 239000012895 dilution Substances 0.000 claims description 10
- 238000010790 dilution Methods 0.000 claims description 10
- 229940050410 gluconate Drugs 0.000 claims description 9
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 claims description 8
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000000174 gluconic acid Substances 0.000 claims description 5
- 235000012208 gluconic acid Nutrition 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000003381 stabilizer Substances 0.000 claims description 3
- SOBHUZYZLFQYFK-UHFFFAOYSA-K trisodium;hydroxy-[[phosphonatomethyl(phosphonomethyl)amino]methyl]phosphinate Chemical compound [Na+].[Na+].[Na+].OP(O)(=O)CN(CP(O)([O-])=O)CP([O-])([O-])=O SOBHUZYZLFQYFK-UHFFFAOYSA-K 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 229940095064 tartrate Drugs 0.000 claims 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 claims 1
- 239000010936 titanium Substances 0.000 description 46
- 235000012431 wafers Nutrition 0.000 description 12
- 239000003638 chemical reducing agent Substances 0.000 description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 238000007747 plating Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003792 electrolyte Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001509 sodium citrate Substances 0.000 description 3
- HRXKRNGNAMMEHJ-UHFFFAOYSA-K trisodium citrate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O HRXKRNGNAMMEHJ-UHFFFAOYSA-K 0.000 description 3
- 229940038773 trisodium citrate Drugs 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 125000004383 glucosinolate group Chemical group 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical class OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical group [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- XKCXPFQPTBUKKQ-UHFFFAOYSA-N [Pt].NN Chemical compound [Pt].NN XKCXPFQPTBUKKQ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007086 side reaction Methods 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229940125725 tranquilizer Drugs 0.000 description 1
- 239000003204 tranquilizing agent Substances 0.000 description 1
- 230000002936 tranquilizing effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1675—Process conditions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1617—Purification and regeneration of coating baths
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
- C23C18/44—Coating with noble metals using reducing agents
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/182,987 US9469902B2 (en) | 2014-02-18 | 2014-02-18 | Electroless deposition of continuous platinum layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201542873A true TW201542873A (zh) | 2015-11-16 |
Family
ID=53797584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104104496A TW201542873A (zh) | 2014-02-18 | 2015-02-11 | 連續鉑層之無電沉積 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9469902B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP2015151628A (cg-RX-API-DMAC7.html) |
| KR (1) | KR102455120B1 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104851837B (cg-RX-API-DMAC7.html) |
| SG (1) | SG10201501150YA (cg-RX-API-DMAC7.html) |
| TW (1) | TW201542873A (cg-RX-API-DMAC7.html) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1752160A3 (en) | 2001-04-06 | 2007-05-30 | Mannkind Corporation | Epitope sequences |
| WO2003008537A2 (en) | 2001-04-06 | 2003-01-30 | Mannkind Corporation | Epitope sequences |
| MXPA05013973A (es) | 2003-06-17 | 2006-03-02 | Mannkind Corp | Metodos para producir, mejorar y sustentar respuestas inmunes contra epitopes restringidos mhc clase i, para propositos profilacticos o terapeuticos. |
| CA2529056C (en) | 2003-06-17 | 2013-09-10 | Mannkind Corporation | Combinations of tumor-associated antigens in compositions for various types of cancers |
| KR20070056042A (ko) | 2004-06-17 | 2007-05-31 | 맨카인드 코포레이션 | 에피토프 유사체 |
| EP2371850A3 (en) | 2005-06-17 | 2012-08-01 | Mannkind Corporation | Epitope analogues |
| CA2612518A1 (en) | 2005-06-17 | 2006-12-28 | Mannkind Corporation | Multivalent entrain-and-amplify immunotherapeutics for carcinoma |
| EP2385059A3 (en) | 2005-06-17 | 2012-02-15 | Mannkind Corporation | Methods and compositions to elicit multivalent immune responses against dominant and subdominant epitopes, expressed on cancer cells and tumor stroma |
| WO2011050344A2 (en) | 2009-10-23 | 2011-04-28 | Mannkind Corporation | Cancer immunotherapy and method of treatment |
| US9499913B2 (en) * | 2014-04-02 | 2016-11-22 | Lam Research Corporation | Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent |
| LT6547B (lt) | 2016-12-28 | 2018-08-10 | Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras | Platinos cheminio nusodinimo tirpalas ir platinos tolydžios dangos formavimo būdas |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3698939A (en) * | 1970-07-09 | 1972-10-17 | Frank H Leaman | Method and composition of platinum plating |
| US4004051A (en) * | 1974-02-15 | 1977-01-18 | Crown City Plating Company | Aqueous noble metal suspensions for one stage activation of nonconductors for electroless plating |
| US4279951A (en) * | 1979-01-15 | 1981-07-21 | Mine Safety Appliances Company | Method for the electroless deposition of palladium |
| JPH04325688A (ja) | 1991-04-26 | 1992-11-16 | Murata Mfg Co Ltd | 無電解めっき浴 |
| US5360471A (en) * | 1992-08-05 | 1994-11-01 | Murata Manufacturing Co., Ltd. | Electroless solder plating bath |
| JP3116637B2 (ja) | 1993-03-12 | 2000-12-11 | 株式会社村田製作所 | 無電解めっき液 |
| JP3920462B2 (ja) * | 1998-07-13 | 2007-05-30 | 株式会社大和化成研究所 | 貴金属を化学的還元析出によって得るための水溶液 |
| JP3455709B2 (ja) * | 1999-04-06 | 2003-10-14 | 株式会社大和化成研究所 | めっき方法とそれに用いるめっき液前駆体 |
| JP3744300B2 (ja) * | 1999-04-06 | 2006-02-08 | 住友電気工業株式会社 | 導電性多孔質とそれを用いた金属多孔質体および電池用極板 |
| US20020152955A1 (en) * | 1999-12-30 | 2002-10-24 | Yezdi Dordi | Apparatus and method for depositing an electroless solution |
| DE10048844A1 (de) * | 2000-10-02 | 2002-04-11 | Basf Ag | Verfahren zur Herstellung von Platinmetall-Katalysatoren |
| TWI264735B (en) * | 2002-03-04 | 2006-10-21 | Sumitomo Electric Industries | Anisotropic electrical conductive film and its manufacturing method thereof |
| JP2004115885A (ja) * | 2002-09-27 | 2004-04-15 | Tokyo Electron Ltd | 無電解メッキ方法 |
| JP2009016389A (ja) * | 2007-06-29 | 2009-01-22 | Panasonic Corp | 半導体レーザ素子およびその製造方法 |
| JP4986174B2 (ja) * | 2008-10-30 | 2012-07-25 | 独立行政法人産業技術総合研究所 | マイクロリアクター用反応管及びその製造方法 |
| US20120301720A1 (en) * | 2009-11-16 | 2012-11-29 | Basf Se | Metal island coatings and method for synthesis |
| KR101079775B1 (ko) * | 2010-04-01 | 2011-11-03 | 경희대학교 산학협력단 | 전기방사에 이은 무전해 도금을 통한 전기 전도성 나노섬유 제조 방법 |
| US8632628B2 (en) * | 2010-10-29 | 2014-01-21 | Lam Research Corporation | Solutions and methods for metal deposition |
| EP2481835B1 (en) * | 2011-01-28 | 2013-09-11 | Atotech Deutschland GmbH | Autocatalytic plating bath composition for deposition of tin and tin alloys |
| JP2013161928A (ja) * | 2012-02-03 | 2013-08-19 | Sumitomo Electric Ind Ltd | プリント配線板用基材およびプリント配線板用基材の製造方法 |
| US9499913B2 (en) * | 2014-04-02 | 2016-11-22 | Lam Research Corporation | Electroless deposition of continuous platinum layer using complexed Co2+ metal ion reducing agent |
| US20150307995A1 (en) * | 2014-04-29 | 2015-10-29 | Lam Research Corporation | ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS |
| US9428836B2 (en) * | 2014-04-29 | 2016-08-30 | Lam Research Corporation | Electroless deposition of continuous cobalt layer using complexed Ti3+ metal ions as reducing agents |
| US20150307994A1 (en) * | 2014-04-29 | 2015-10-29 | Lam Research Corporation | ELECTROLESS DEPOSITION OF CONTINUOUS NICKEL LAYER USING COMPLEXED Ti3+ METAL IONS AS REDUCING AGENTS |
-
2014
- 2014-02-18 US US14/182,987 patent/US9469902B2/en active Active
-
2015
- 2015-02-10 JP JP2015023742A patent/JP2015151628A/ja active Pending
- 2015-02-11 TW TW104104496A patent/TW201542873A/zh unknown
- 2015-02-13 SG SG10201501150YA patent/SG10201501150YA/en unknown
- 2015-02-13 KR KR1020150022631A patent/KR102455120B1/ko active Active
- 2015-02-16 CN CN201510084904.1A patent/CN104851837B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104851837B (zh) | 2018-03-13 |
| CN104851837A (zh) | 2015-08-19 |
| US9469902B2 (en) | 2016-10-18 |
| JP2015151628A (ja) | 2015-08-24 |
| KR102455120B1 (ko) | 2022-10-14 |
| US20150232995A1 (en) | 2015-08-20 |
| KR20150097412A (ko) | 2015-08-26 |
| SG10201501150YA (en) | 2015-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201542873A (zh) | 連續鉑層之無電沉積 | |
| JP2015151628A5 (cg-RX-API-DMAC7.html) | ||
| JP4559818B2 (ja) | シリコン基板の無電解めっき方法およびシリコン基板上の金属層形成方法 | |
| KR102452723B1 (ko) | 환원제로서 착화된 티타늄 ３가 금속 양이온들을 사용하는 연속적인 코발트층의 무전해 디포지션 | |
| US9301399B2 (en) | Method of treating wiring substrate and wiring substrate manufactured by the same | |
| US20150307995A1 (en) | ELECTROLESS DEPOSITION OF CONTINUOUS PALLADIUM LAYER USING COMPLEXED Co2+ METAL IONS OR Ti3+ METAL IONS AS REDUCING AGENTS | |
| TW201602409A (zh) | 使用錯合Co2+金屬離子還原劑之連續鉑層的無電鍍沉積 | |
| JP2005320614A (ja) | 電解用電極の製造方法 | |
| JP5399308B2 (ja) | 半導体ウエハ上への無電解めっきの前処理液、無電解めっき方法、及び半導体装置 | |
| KR101807451B1 (ko) | 염화 구리, cvd 원료, 구리 배선막 및 염화 구리의 제조 방법 | |
| TW201903202A (zh) | 使用氫之逐層沉積 | |
| US20150307994A1 (en) | ELECTROLESS DEPOSITION OF CONTINUOUS NICKEL LAYER USING COMPLEXED Ti3+ METAL IONS AS REDUCING AGENTS | |
| JP2015196904A5 (cg-RX-API-DMAC7.html) | ||
| KR20110076448A (ko) | 탄화물 세라믹 열판 및 그 제조방법 | |
| KR101179118B1 (ko) | 질화알루미늄-ｈ질화붕소 복합체를 기판으로 하는 열판 및 그 제조방법 | |
| JP5772133B2 (ja) | 湿式エッチング方法 | |
| WO2002046493A1 (fr) | Fabrication d'une electrode a couche mince de metal noble pour systemes de super-integration |