TW201535776A - 發光元件 - Google Patents
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- TW201535776A TW201535776A TW103107811A TW103107811A TW201535776A TW 201535776 A TW201535776 A TW 201535776A TW 103107811 A TW103107811 A TW 103107811A TW 103107811 A TW103107811 A TW 103107811A TW 201535776 A TW201535776 A TW 201535776A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 169
- 230000004888 barrier function Effects 0.000 claims description 33
- 238000000605 extraction Methods 0.000 claims description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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Abstract
本發明係揭露一種發光元件,包含:一基板;一發光疊層位於基板之上方,可發出一紅外線(IR)波長之光;以及一半導體窗戶層,由AlGaInP系列之材料組成,位於基板與發光疊層之間。
Description
本發明係關於發光元件,尤其是關於紅外線發光元件。
發光二極體(Light-Emitting Diode;LED)具有低耗能、低發熱、操作壽命長、防震、體積小、反應速度快以及輸出的光波長穩定等良好光電特性,因此適用於各種用途。
其中紅外線發光二極體(Infrared LED;IR LED)的應用越來越廣,從傳統應用於遙控器和監視器,最近更發展到應用於智慧型手機以及觸控面板。其中因為每一個觸控面板相對使用較大量之紅外線發光二極體,所以相對於其他應用在價格上也要求更低,降低紅外線發光二極體之成本因此有其必要性。
圖1係一習知之紅外線發光元件之剖面圖,如圖1所示,此發光元件包含一永久基板101,於其上方由上往下依序有一發光疊層102,一金屬反射層103,一阻障層104,及一接合(bonding)結構105。此外,一第一電極106E1及其延伸電極106E1’設置於發光疊層102上,及一第二電極106E2設置於永久基板101上。第一電極106E1及其延伸電極106E1’
以及第二電極106E2用以傳遞電流。發光疊層102可發出一紅外線波段之光線。在製程上,此種習知之紅外線發光元件其發光疊層102原本係成長於成長基板上(圖未示),再利用接合結構105接合原本分離之發光疊層102與永久基板101,故可於兩者接合前先形成金屬反射層103於發光疊層102後再接合。但如上述,在特定應用,例如觸控面板的應用要求低成本時,上述接合製程及金屬反射層103等,都是造成高成本之主因。另外,在觸控面板應用上,也要求較佳之側面出光以達到較大之出光角度,在實際應用上已發現上述習知之紅外線發光元件難以符合此方面之要求。
本發明揭露一種發光元件。本發明所揭露之發光元件包含:一基板;一發光疊層位於基板之上方,可發出一紅外線(IR)波長之光;以及一半導體窗戶層,由AlGaInP系列之材料組成,位於基板與發光疊層之間。
101‧‧‧永久基板
102‧‧‧發光疊層
103‧‧‧金屬反射層
104‧‧‧阻障層
105‧‧‧接合結構
106E1‧‧‧第一電極
106E1’‧‧‧(第一電極之)延伸電極
106E2‧‧‧第二電極
20‧‧‧基板
21‧‧‧緩衝層
22‧‧‧半導體窗戶層
23‧‧‧發光疊層
231‧‧‧第一電性半導體層
232‧‧‧發光層
232b1,232b2,…232bn‧‧‧阻障層
232w1,232w2,…232wn-1‧‧‧井層
233‧‧‧第二電性半導體層
24‧‧‧側向光取出層
25‧‧‧接觸層
26‧‧‧第一電極
26a‧‧‧(第一電極之)延伸電極
27‧‧‧第二電極
S1‧‧‧基板下表面
S2‧‧‧基板側面
S3‧‧‧發光元件上表面
圖1所示為一習知之發光元件。
圖2所示為本發明第一實施例之發光元件。
圖3所示為本發明第一實施例之發光元件中之第二電極圖
案。
圖4所示為本發明第一實施例之發光元件中之第二電極另一圖案。
圖2為本發明第一實施例之發光元件。如圖2所示,此發光元件包含:一基板20;一發光疊層23位於基板20之上方,可發出一紅外線(IR)波長之光;以及一半導體窗戶層22,由AlGaInP系列之材料組成,位於基板20與發光疊層23之間。其中,基板20例如包含砷化鎵(GaAs)基板。上述紅外線(IR)波長介於約750nm至1100nm之間,在一實施例中,紅外線(IR)波長大於900nm,例如是940nm。半導體窗戶層22為一單一層結構並與發光疊層23直接接觸。在製程上可於形成半導體窗戶層22後,即於相同機台上調整通入之氣體種類或比例,以接著形成發光疊層23。在一實施例中,半導體窗戶層22包含(AlxGa1-x)0.5In0.5P,其中x為0.1~1。值得注意的是,發光疊層23具有一第一折射率n1,半導體窗戶層22具有一第二折射率n2,第一折射率n1大於第二折射率n2至少0.2以上。因此,對於上述發光疊層23所發出之紅外線波長之光,在發光疊層23與半導體窗戶層22間係由高折射率向低折射率行進,加上發光疊層23之第一折射率n1與半導體窗戶層22之第二折射率n2間之差異,使發光疊層23所發出之紅外線波長之光在半導體窗戶層22容易發生全反射,即半導體窗戶層22提供一單一層結構之反射鏡功能,且相對於一般分
散式布拉格反射結構(DBR),其提供較佳之側向之反射功能。一般分散式布拉格反射結構(DBR)需要數十層才能達到一定程度的反射率,且其反射功能僅限於正向一定範圍之角度,一般是與反射結構之法線夾0度~17度的光;而本實施例僅藉由單一層結構之半導體窗戶層22即可反射與半導體窗戶層22之法線夾50度~90度的光,提供較佳之側面出光以形成較大之出光角度,並且因為光取出改善,整體發光功率因而提昇。在實際之測試上,分別測試發出850nm及940nm之發光元件,本發明實施例之發光疊層23在第一電性半導體層231採用砷化鋁鎵(AlGaAs),具有第一折射率n1約3.4,半導體窗戶層22採用(Al0.6Ga0.4)0.5In0.5P,具有第二折射率n2約2.98,兩折射率值差約3.4,其與其他條件相同但僅半導體窗戶層22改用砷化鋁鎵(AlGaAs)(折射率約3.4)之發光元件相較,本發明實施例850nm發光元件之發光功率相較由4.21mW因而提昇至4.91mW,增加約17%;本發明實施例940nm發光元件之發光功率相較由5.06mW因而提昇至5.27mW,增加約4%。另外,在製程上或成本上,半導體窗戶層22與發光疊層23直接接觸,且為一單一層結構,故相對於一般分散式布拉格反射結構,製程更為簡化且成本更低。在厚度上,在一實施例中,半導體窗戶層22之厚度小於1μm即可有良好之反射效果。
發光疊層23包含一第一電性半導體層231位於半導體窗戶層22之上;一活性層232位於第一電性半導體層231之上;以及一第二電性半導體層233位於活性層232之上,其中第一電性半導體
層231與半導體窗戶層22直接接觸。第一電性半導體層231、活性層232、及第二電性半導體層233為III-V族材料所形成。第一電性半導體層231和第二電性半導體層233電性相異,例如第一電性半導體層231是n型半導體層,而第二電性半導體層233是p型半導體層,在施加外部電源時,第一電性半導體層231及第二電性半導體層233分別產生載子(電子/電洞)並於活性層232複合而產生光。在一實施例中,第一電性半導體層231摻雜碲(Te)或硒(Se)。在一實施例中,活性層232包含一多重量子井結構(MQW),此多重量子井結構包含複數之阻障層,例如阻障層232b1,232b2,…232bn,及一個或多個井層,例如井層232w1,232w2,…232wn-1,兩相鄰之阻障層間有一個井層,例如兩相鄰之阻障層232b1及232b2間有一個井層232w1。其中複數之阻障層232b1,232b2,…232bn中最臨近第一電性半導體層231之阻障層(即阻障層232b1)及最臨近第二電性半導體層233之阻障層(即阻障層232bn)不含磷(P),其餘之阻障層(阻障層232b2,…232bn-1)則含磷(P)。在一實施例中,井層232w1,232w2,…232wn-1包括砷化銦鎵(InGaAs),其中銦含量約2%~30%並隨發光疊層23所欲發出之光波長而調整,以達前述紅外線之波段範圍。而由於井層232w1,232w2,…232wn-1包含銦(In)會使晶格常數變大,上述之阻障層(阻障層232b2,…232bn-1)中含磷(P)可使晶格常數變小而將整體晶格常數調整回適當範圍。在一實施例中,阻障層232b2,…232bn-1例如包括磷化鋁鎵砷(AlGaAsP)。而如上述,最臨近第一電性半導體層231之阻障層(阻障層232b1)及最臨近第二電性半導體層233之阻障層(阻障層232bn)
不含磷(P),可使其厚度較厚時晶格常數不至於過小;而較厚之阻障層232b1及阻障層232bn可對臨近之第一電性半導體層231及第二電性半導體層233中之摻雜物有較佳之擴散阻隔效果。在一實施例中,阻障層232b1及阻障層232bn例如包括砷化鋁鎵(AlGaAs)。
本發明第一實施例之發光元件更包含一緩衝層21位於基板20與半導體窗戶層22之間,緩衝層21摻雜矽(Si),例如摻雜矽(Si)之砷化鎵(GaAs)。如前所述,第一電性半導體層231摻雜碲(Te)或硒(Se),而緩衝層21摻雜矽(Si),如此之配置使得發光元件在製程上有更多之調整彈性,例如是晶格常數之調整。另外,本發明第一實施例之發光元件更包含一側向光取出層24位於發光疊層23之上,一接觸層25位於側向光取出層24之上,及一第一電極26係設置於接觸層25上,而一第二電極27設置於基板20上。側向光取出層24有助於光取出,特別是因為厚度增加而使側面出光增加,故其厚度可以相對地較厚,例如約5μm至30μm,在一實施例中,側向光取出層24包含摻雜鋅(Zn)之砷化鎵(GaAs),厚度約10μm。接觸層25用以與其上之第一電極26形成歐姆接觸,以降低電阻值,在一實施例中,接觸層25包含摻雜鋅(Zn)之砷化鎵(GaAs)。側向光取出層24與接觸層25同樣為包含摻雜鋅(Zn)之砷化鎵(GaAs)可簡化製程上機台之配置,但須注意的是,側向光取出層24與接觸層25之功能不同,為形成歐姆接觸,接觸層25中的鋅(Zn)含量比側向光取出層24的鋅(Zn)含量多很多,才能形成歐姆接觸。第一電極26可設置有延伸電極26a,以助於電流擴散。值得注意的是,發光疊層23所發出
之紅外線波長之光向基板20行進時,可能仍有部份在半導體窗戶層22未發生全反射。如前所述,配合在特定應用時,可能要求較大之出光角度,故如圖所示,在本實施例中,第二電極27是一圖案化之電極,較詳細之說明請參圖3及圖4,由上視觀看(top view)時,第二電極27之圖案可以例如是如圖3之網格狀(mesh),圖3顯示一砷化鎵(GaAs)之基板20上形成有網格狀之鍺金(GeAu)第二電極27;或如圖4所示,第二電極27之圖案可以是多個圓形,圖4顯示一砷化鎵(GaAs)之基板20上形成有多個圓形狀之鍺金(GeAu)第二電極27;如此圖案化之第二電極27對於在半導體窗戶層22未發生全反射之光而言,形成散射中心,可增加散射而使出光角度較大。此外,亦可選擇性地在基板20的下表面S1未設置第二電極27處形成粗化(圖未繪示),同樣可增加光的散射,使光容易從基板20之側面出光,甚至基板20之側面S2及發光元件上表面S3未設置第一電極26處亦可予以粗化(圖未繪示)。
上述實施例僅為例示性說明本發明之原理及其功效,而非用於限制本發明。任何本發明所屬技術領域中具有通常知識者均可在不違背本發明之技術原理及精神的情況下,對上述實施例進行修改及變化。因此本發明之權利保護範圍如後述之申請專利範圍所列。
20‧‧‧基板
21‧‧‧緩衝層
22‧‧‧半導體窗戶層
23‧‧‧發光疊層
231‧‧‧第一電性半導體層
232‧‧‧發光層
232b1,232b2,…232bn‧‧‧阻障層
232w1,232w2,…232wn-1‧‧‧井層
233‧‧‧第二電性半導體層
24‧‧‧側向光取出層
25‧‧‧接觸層
26‧‧‧第一電極
26a‧‧‧(第一電極之)延伸電極
27‧‧‧第二電極
S1‧‧‧基板下表面
S2‧‧‧基板側面
S3‧‧‧發光元件上表面
Claims (20)
- 一發光元件,包含:一基板;一發光疊層位於該基板之上方,可發出一紅外線(IR)波長之光;以及一半導體窗戶層,由AlGaInP系列之材料組成,位於該基板與該發光疊層之間。
- 如請求項第1項所述的發光元件,其中該基板包含砷化鎵(GaAs)。
- 如請求項第1項所述的發光元件,其中該紅外線(IR)波長介於約750nm至1100nm之間。
- 如請求項第1項所述的發光元件,其中該紅外線(IR)波長大於900nm。
- 如請求項第1項所述的發光元件,其中該半導體窗戶層與該發光疊層直接接觸。
- 如請求項第1項所述的發光元件,其中該半導體窗戶層為一單一層結構。
- 如請求項第1項所述的發光元件,其中該發光疊層具有一第一折射率n1,該半導體窗戶層具有一第二折射率n2,該第一折射率n1大 於該第二折射率n2至少0.2以上。
- 如請求項第1項所述的發光元件,其中該半導體窗戶層包含(AlxGa1-x)0.5In0.5P,其中x為0.1~1。
- 如請求項第1項所述的發光元件,其中該半導體窗戶層之厚度小於1μm。
- 如請求項第1項所述的發光元件,其中該發光疊層包含:一第一電性半導體層位於該半導體窗戶層之上;一活性層位於該第一電性半導體層之上;以及一第二電性半導體層位於該活性層之上。
- 如請求項第10項所述的發光元件,其中該第一電性半導體層與該半導體窗戶層直接接觸。
- 如請求項第11項所述的發光元件,其中該第一電性半導體層摻雜碲(Te)或硒(Se)。
- 如請求項第10項所述的發光元件,其中該活性層包含一多重量子井結構(MQW),該多重量子井結構包含複數之阻障層及一井層位於相鄰之兩該阻障層間。
- 如請求項第13項所述的發光元件,其中該複數之阻障層中最臨近該第一電性半導體層之該阻障層及最臨近該第二電性半導體層之該阻障層不含磷(P),其餘之該阻障層含磷(P)。
- 如請求項第1項所述的發光元件,更包含一緩衝層位於該基板與該半導體窗戶層之間,該緩衝層包含摻雜矽(Si)之砷化鎵(GaAs)。
- 如請求項第1項所述的發光元件,更包含一側向光取出層位於該發光疊層之上。
- 如請求項第16項所述的發光元件,更包含一接觸層位於該側向光取出層之上。
- 如請求項第17項所述的發光元件,更包含一上電極位於該接觸層之上,一下電極位於該基板之下。
- 如請求項第18項所述的發光元件,其中該下電極為一圖案化電極。
- 如請求項第19項所述的發光元件,其中該下電極之圖案為網格狀(mesh)或多個圓形。
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