TW201532135A - 半導體晶圓之加工方法 - Google Patents
半導體晶圓之加工方法 Download PDFInfo
- Publication number
- TW201532135A TW201532135A TW103142147A TW103142147A TW201532135A TW 201532135 A TW201532135 A TW 201532135A TW 103142147 A TW103142147 A TW 103142147A TW 103142147 A TW103142147 A TW 103142147A TW 201532135 A TW201532135 A TW 201532135A
- Authority
- TW
- Taiwan
- Prior art keywords
- passivation film
- semiconductor wafer
- laser light
- along
- dividing groove
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014014134A JP2015142015A (ja) | 2014-01-29 | 2014-01-29 | 半導体ウェーハの加工方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201532135A true TW201532135A (zh) | 2015-08-16 |
Family
ID=53695045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103142147A TW201532135A (zh) | 2014-01-29 | 2014-12-04 | 半導體晶圓之加工方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2015142015A (ja) |
KR (1) | KR20150090833A (ja) |
CN (1) | CN104810323A (ja) |
SG (1) | SG10201500436XA (ja) |
TW (1) | TW201532135A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6564301B2 (ja) * | 2015-10-26 | 2019-08-21 | 東京応化工業株式会社 | 支持体分離方法 |
JP2018060988A (ja) * | 2016-10-04 | 2018-04-12 | 日本特殊陶業株式会社 | 蓋部材、発光装置、およびこれらの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0821623B2 (ja) * | 1985-09-20 | 1996-03-04 | 株式会社日立製作所 | レ−ザ処理方法 |
US6562698B2 (en) * | 1999-06-08 | 2003-05-13 | Kulicke & Soffa Investments, Inc. | Dual laser cutting of wafers |
US20070272666A1 (en) * | 2006-05-25 | 2007-11-29 | O'brien James N | Infrared laser wafer scribing using short pulses |
JP2011165766A (ja) * | 2010-02-05 | 2011-08-25 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JP2013102039A (ja) * | 2011-11-08 | 2013-05-23 | Disco Abrasive Syst Ltd | 半導体ウエーハの加工方法 |
-
2014
- 2014-01-29 JP JP2014014134A patent/JP2015142015A/ja active Pending
- 2014-12-04 TW TW103142147A patent/TW201532135A/zh unknown
-
2015
- 2015-01-12 KR KR1020150004004A patent/KR20150090833A/ko not_active Application Discontinuation
- 2015-01-20 SG SG10201500436XA patent/SG10201500436XA/en unknown
- 2015-01-27 CN CN201510039063.2A patent/CN104810323A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
CN104810323A (zh) | 2015-07-29 |
SG10201500436XA (en) | 2015-08-28 |
KR20150090833A (ko) | 2015-08-06 |
JP2015142015A (ja) | 2015-08-03 |
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