TW201530791A - ｎ型擴散層形成組成物、ｎ型擴散層的製造方法及太陽電池單元的製造方法 - Google Patents

ｎ型擴散層形成組成物、ｎ型擴散層的製造方法及太陽電池單元的製造方法 Download PDF

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Publication number
TW201530791A
TW201530791A TW104113908A TW104113908A TW201530791A TW 201530791 A TW201530791 A TW 201530791A TW 104113908 A TW104113908 A TW 104113908A TW 104113908 A TW104113908 A TW 104113908A TW 201530791 A TW201530791 A TW 201530791A
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Taiwan
Prior art keywords
diffusion layer
type diffusion
forming composition
glass
ether
Prior art date
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TW104113908A
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English (en)
Chinese (zh)
Inventor
Yoichi Machii
Masato Yoshida
Takeshi Nojiri
Kaoru Okaniwa
Mitsunori Iwamuro
Shuichiro Adachi
Tetsuya Sato
Keiko Kizawa
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Hitachi Chemical Co Ltd
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Publication of TW201530791A publication Critical patent/TW201530791A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
TW104113908A 2011-02-17 2012-02-16 ｎ型擴散層形成組成物、ｎ型擴散層的製造方法及太陽電池單元的製造方法 TW201530791A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011032430 2011-02-17

Publications (1)

Publication Number Publication Date
TW201530791A true TW201530791A (zh) 2015-08-01

Family

ID=46672499

Family Applications (2)

Application Number Title Priority Date Filing Date
TW104113908A TW201530791A (zh) 2011-02-17 2012-02-16 ｎ型擴散層形成組成物、ｎ型擴散層的製造方法及太陽電池單元的製造方法
TW101105069A TW201251036A (en) 2011-02-17 2012-02-16 Composition for forming n-type diffusion layer, method for producing n-type diffusion layer and method for producing photovoltaic cell

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW101105069A TW201251036A (en) 2011-02-17 2012-02-16 Composition for forming n-type diffusion layer, method for producing n-type diffusion layer and method for producing photovoltaic cell

Country Status (5)

Country Link
JP (2) JP5673694B2 (ja)
KR (1) KR20140041423A (ja)
CN (1) CN103348449A (ja)
TW (2) TW201530791A (ja)
WO (1) WO2012111575A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6582747B2 (ja) * 2015-08-28 2019-10-02 日立化成株式会社 ｎ型拡散層形成用組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池セルの製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE548647A (ja) * 1955-06-28
US4800175A (en) * 1987-05-29 1989-01-24 Owens-Illinois Television Products Inc. Phosphorous planar dopant source for low temperature applications
US4891331A (en) * 1988-01-21 1990-01-02 Oi-Neg Tv Products, Inc. Method for doping silicon wafers using Al2 O3 /P2 O5 composition
JPH08167658A (ja) * 1994-12-15 1996-06-25 Hitachi Ltd 半導体装置およびその製造方法
DE19910816A1 (de) * 1999-03-11 2000-10-05 Merck Patent Gmbh Dotierpasten zur Erzeugung von p,p+ und n,n+ Bereichen in Halbleitern
EP2109643A4 (en) * 2007-01-03 2011-09-07 Nanogram Corp SILICON / GERMANIUM NANOPARTICLE INK, DOPED PARTICLES, PRINTING AND METHODS FOR SEMICONDUCTOR APPLICATIONS
CN101139169A (zh) * 2007-08-09 2008-03-12 东华大学 作为磷扩散源的微晶玻璃及其制备方法
US20090092745A1 (en) * 2007-10-05 2009-04-09 Luca Pavani Dopant material for manufacturing solar cells
WO2009060761A1 (ja) * 2007-11-09 2009-05-14 Nippon Electric Glass Co., Ltd. ドーパントホストおよびその製造方法
JP5522900B2 (ja) * 2008-02-22 2014-06-18 東京応化工業株式会社 電極形成用導電性組成物及び太陽電池の形成方法
CN101814535A (zh) * 2009-02-19 2010-08-25 上海交大泰阳绿色能源有限公司 一种选择性发射极晶体硅太阳能电池用浆料及其制备方法
CN102803171A (zh) * 2009-06-17 2012-11-28 旭硝子株式会社 电极形成用玻璃料以及使用其的电极形成用导电糊料、太阳能电池

Also Published As

Publication number Publication date
TW201251036A (en) 2012-12-16
JP5673694B2 (ja) 2015-02-18
KR20140041423A (ko) 2014-04-04
WO2012111575A1 (ja) 2012-08-23
JPWO2012111575A1 (ja) 2014-07-07
JP2015053505A (ja) 2015-03-19
CN103348449A (zh) 2013-10-09

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