TW201528451A - 底部塡充材料及使用其之半導體裝置的製造方法 - Google Patents

底部塡充材料及使用其之半導體裝置的製造方法 Download PDF

Info

Publication number
TW201528451A
TW201528451A TW103131083A TW103131083A TW201528451A TW 201528451 A TW201528451 A TW 201528451A TW 103131083 A TW103131083 A TW 103131083A TW 103131083 A TW103131083 A TW 103131083A TW 201528451 A TW201528451 A TW 201528451A
Authority
TW
Taiwan
Prior art keywords
underfill material
reaction rate
resin
underfill
sec
Prior art date
Application number
TW103131083A
Other languages
English (en)
Other versions
TWI649843B (zh
Inventor
Hironobu Moriyama
Original Assignee
Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Publication of TW201528451A publication Critical patent/TW201528451A/zh
Application granted granted Critical
Publication of TWI649843B publication Critical patent/TWI649843B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/24—Di-epoxy compounds carbocyclic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
    • C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
    • C08G59/4207—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof aliphatic
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
    • C08G59/686—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/14—Peroxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/10—Homopolymers or copolymers of methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1302—Disposition
    • H01L2224/13023—Disposition the whole bump connector protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/13111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/271—Manufacture and pre-treatment of the layer connector preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/731—Location prior to the connecting process
    • H01L2224/73101—Location prior to the connecting process on the same surface
    • H01L2224/73103—Bump and layer connectors
    • H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75702—Means for aligning in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81009—Pre-treatment of the bump connector or the bonding area
    • H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
    • H01L2224/81011—Chemical cleaning, e.g. etching, flux
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119—Arrangement of the bump connectors prior to mounting
    • H01L2224/81193—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/81204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81905—Combinations of bonding methods provided for in at least two different groups from H01L2224/818 - H01L2224/81904
    • H01L2224/81907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
    • H01L2224/83204—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding with a graded temperature profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83862—Heat curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/9205—Intermediate bonding steps, i.e. partial connection of the semiconductor or solid-state body during the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0635—Acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/186—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20102—Temperature range 0 C=<T<60 C, 273.15 K =<T< 333.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20103—Temperature range 60 C=<T<100 C, 333.15 K =< T< 373.15K
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/201—Temperature ranges
    • H01L2924/20104—Temperature range 100 C=<T<150 C, 373.15 K =< T < 423.15K

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

本發明提供一種實現無空隙構裝及良好焊接性之底部填充材料、及使用其之半導體裝置之製造方法。本發明使用底部填充材料，其含有環氧樹脂及硬化劑，藉由使用示差掃描熱量計之小澤法所算出之於240℃之反應率到達20%之時間為2.0sec以下，該反應率到達60%之時間為3.0sec以上。藉此，可實現無空隙構裝及良好之焊接性。

Description

底部填充材料及使用其之半導體裝置的製造方法
本發明係關於一種用於構裝半導體晶片之底部填充材料、及使用其之半導體裝置之製造方法。
近年來，於半導體晶片之構裝方法中，為了縮短步驟，業界正研究使用在半導體IC(Integrated Circuit，積體電路)電極上貼附底部填充膜之「預供給型底部填充膜(PUF：Pre-applied Underfill Film)」。
使用該預供給型底部填充膜之構裝方法例如藉由如下方式進行(例如參照專利文獻1)。
步驟A：於晶圓上貼附底部填充膜，進行切割而獲得半導體晶片。
步驟B：於貼合有底部填充膜之狀態下，將半導體晶片位置對準而搭載。
步驟C：將半導體晶片熱壓接，藉由焊點凸塊之金屬鍵而確保傳導，及藉由底部填充膜之硬化而進行接著。
於此種構裝方法中，提出有使用環氧樹脂作為接合焊點凸塊之接著劑的熱硬化接著劑。關於該接著劑，提出有使用酚、酸酐、胺系硬 化劑等各種硬化劑作為環氧樹脂之硬化劑的調配組成(例如參照專利文獻2)。
作為高溫壓接之空隙之對策，雖然可藉由使用過氧化物等作為硬化劑來加快硬化速度而實現無空隙，但焊接性會變差。
[專利文獻1]日本特開2005-28734號公報
[專利文獻2]日本特開2010-10669號公報
本發明係鑒於此種習知之實際情況而提出者，提供一種實現無空隙構裝及良好焊接性之底部填充材料、及使用其之半導體裝置之製造方法。
本案發明者經過努力研究，結果發現藉由到達第一反應率之時間為既定時間以下，到達高於第一反應率之第二反應率的時間為既定時間以上，可獲得無空隙構裝及良好之焊接性，從而完成本發明。
即，本發明係一種於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，被預先貼合於半導體晶片之底部填充材料，其特徵在於：含有環氧樹脂及硬化劑，藉由使用示差掃描熱量計之小澤法所算出之於240℃之反應率到達20%之時間為2.0sec以下，該反應率到達60%之時間為3.0sec以上。
又，本發明之半導體裝置之製造方法的特徵在於含有：搭載步驟：將形成有附焊料電極且於該電極面貼合有底部填充材料之半導體晶片搭載於形成有與上述附焊料電極對向之對向電極的電子零件； 及熱壓接步驟：將上述半導體晶片與上述電子零件熱壓接，上述底部填充材料含有環氧樹脂及硬化劑，藉由使用示差掃描熱量計之小澤法所算出之於240℃之反應率到達20%之時間為2.0sec以下，該反應率到達60%之時間為3.0sec以上。
根據本發明，藉由於240℃之反應率到達20%之時間為2.0sec以下，反應率到達60%之時間為3.0sec以上，可實現無空隙構裝及良好之焊接性。
1‧‧‧晶圓
2‧‧‧底部填充膜
3‧‧‧治具
4‧‧‧刀片
10‧‧‧半導體晶片
11‧‧‧半導體
12‧‧‧電極
13‧‧‧焊料
20‧‧‧底部填充材料
21‧‧‧接著劑層
30‧‧‧電路基板
31‧‧‧基材
32‧‧‧對向電極
圖1係示意地表示搭載前之半導體晶片與電路基板之剖面圖。
圖2係示意地表示搭載時之半導體晶片與電路基板之剖面圖。
圖3係示意地表示熱壓接後之半導體晶片與電路基板之剖面圖。
圖4係表示本實施形態之半導體裝置之製造方法的流程圖。
圖5係示意地表示在晶圓上貼附底部填充膜之步驟之立體圖。
圖6係示意地表示切割晶圓之步驟之立體圖。
圖7係示意地表示拾取半導體晶片之步驟之立體圖。
圖8係表示藉由DSC-小澤法所算出之相對於反應時間的底部填充膜之反應率的曲線圖。
以下，按照下述順序對本發明之實施形態進行詳細說明。
1.底部填充材料
2.半導體裝置之製造方法
3.實施例
<1.底部填充材料>
本實施形態之底部填充材料係於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，預先貼合於半導體晶片者。
圖1係示意地表示搭載前之半導體晶片與電路基板之剖面圖，圖2係示意地表示搭載時之半導體晶片與電路基板之剖面圖，及圖3係示意地表示熱壓接後之半導體晶片與電路基板之剖面圖。
如圖1~圖3所示，本實施形態之底部填充材料20係預先貼合於形成有附焊料電極之半導體晶片10的電極面而使用，利用底部填充材料20硬化而成之接著層21，將半導體晶片10與形成有與附焊料電極對向之對向電極之電路基板30進行接合。
半導體晶片10於矽等半導體11表面形成有積體電路並具有稱為凸塊之連接用附焊料電極。附焊料電極係於由銅等構成之電極12上接合有焊料13者，且具有將電極12厚度與焊料13厚度合計之厚度。
作為焊料，可使用Sn-37Pb共晶焊料(熔點183℃)、Sn-Bi焊料(熔點139℃)、Sn-3.5Ag(熔點221℃)、Sn-3.0Ag-0.5Cu(熔點217℃)、Sn-5.0Sb(熔點240℃)等。
電路基板30於例如硬質基板、可撓性基板等基材31上形成 電路。又，於搭載半導體晶片10之構裝部形成有對向電極32，該對向電極32在與半導體晶片10之附焊料電極對向之位置具有既定厚度。
底部填充材料20含有膜形成樹脂、環氧樹脂、及酸酐。膜形成樹脂相當於重量平均分子量為10×104以上之高分子量樹脂，就膜形成性之觀點而言，較佳為10×104~100×104之重量平均分子量。作為膜形成樹脂，可使用丙烯酸橡膠聚合物、苯氧基樹脂、環氧樹脂、改質環氧樹脂、胺基甲酸酯樹脂等各種樹脂。該等膜形成樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就膜強度及接著性之觀點而言，本實施形態較佳使用苯氧基樹脂、及具有縮水甘油基之丙烯酸橡膠聚合物。又，丙烯酸橡膠聚合物之玻璃轉移溫度Tg較佳為-30℃以上20℃以下。藉此，可提高底部填充材料20之可撓性。
作為環氧樹脂，例如可列舉：倍環戊二烯型環氧樹脂、縮水甘油醚型環氧樹脂、縮水甘油胺型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、雙酚S型環氧樹脂、螺環型環氧樹脂、萘型環氧樹脂、聯苯型環氧樹脂、萜烯型環氧樹脂、四溴雙酚A型環氧樹脂、甲酚酚醛清漆型環氧樹脂、苯酚酚醛清漆型環氧樹脂、α-萘酚酚醛清漆型環氧樹脂、溴化苯酚酚醛清漆型環氧樹脂等。該等環氧樹脂可單獨使用1種，亦可組合2種以上而使用。該等之中，就高接著性、耐熱性之方面而言，本實施形態較佳使用倍環戊二烯型環氧樹脂。
作為硬化劑，可使用作為環氧化合物之硬化劑而公知者，亦可具有潛伏性。可使用例如酸酐系硬化劑、咪唑系硬化劑、胺系硬化劑等。
酸酐具有去除焊料表面之氧化膜之助熔功能，因此可獲得優 異之連接可靠性。作為酸酐，例如可列舉：四丙烯基琥珀酸酐、十二烯基琥珀酸酐等脂肪族酸酐，六氫鄰苯二甲酸酐、甲基四氫鄰苯二甲酸酐等脂環式酸酐，鄰苯二甲酸酐、偏苯三甲酸酐、均苯四甲酸二酐等芳香族酸酐等。該等環氧硬化劑可單獨使用1種，亦可組合2種以上而使用。該等環氧硬化劑之中，就該等中之焊料連接性之方面而言，較佳使用脂肪族酸酐。
又，較佳添加硬化促進劑。作為硬化促進劑之具體例，可列舉：2-甲基咪唑、2-乙基咪唑、2-乙基-4-甲基咪唑等咪唑類、1,8-二氮雙環(5,4,0)十一烯-7鹽(DBU鹽)、2-(二甲基胺基甲基)苯酚等三級胺類、三苯基膦等膦類、辛酸錫等金屬化合物等。
又，底部填充材料20並且含有環氧樹脂及酸酐。作為丙烯酸樹脂，可使用單官能(甲基)丙烯酸酯、2官能以上之(甲基)丙烯酸酯。作為單官能(甲基)丙烯酸酯，可列舉：(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯等。作為2官能以上之(甲基)丙烯酸酯，可列舉：雙酚F-EO改質二(甲基)丙烯酸酯、雙酚A-EO改質二(甲基)丙烯酸酯、三羥甲基丙烷PO改質(甲基)丙烯酸酯、多官能(甲基)丙烯酸胺基甲酸酯等。該等丙烯酸樹脂可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用2官能(甲基)丙烯酸酯。
作為有機過氧化物，例如可列舉：過氧化酯、過氧縮酮、過氧化氫、過氧化二烷基、過氧化二醯基、過氧化二碳酸酯等。該等有機過氧化物可單獨使用，亦可組合2種以上而使用。該等之中，本實施形態較佳使用過氧化酯。
又，作為其他添加組成物，較佳含有無機填料。藉由含有無 機填料，可調整壓接時之樹脂層的流動性。作為無機填料，可使用矽石、滑石、氧化鈦、碳酸鈣、氧化鎂等。
並且，亦可視需要添加環氧系、胺基系、巰基-硫醚系、脲基系等之矽烷偶合劑。
含有此種構成之底部填充材料20中，利用使用示差掃描熱量計(DSC：Differential Scanning Calorimeter)之小澤法算出的在240℃之反應率到達20%之時間為2.0sec以下，反應率到達60%之時間為3.0sec以上。於反應率到達20%之時間超過2.0sec之情形時，會產生空隙，於反應率到達60%之時間未達3.0sec之情形時，無法獲得良好之焊接。
又，反應率為20%時之黏度較佳為0.2×104Pa‧s以上，反應率為60%時之黏度較佳為500×104pa‧s以下。於反應率為20%時之黏度未達0.2×104Pa‧s之情形時，空隙殘留，於反應率為60%時之黏度超過500×104Pa‧s之情形時，無法獲得良好之焊接。
利用DSC-小澤法之反應率的算出方法係如下所述。首先，根據樣品之等速升溫資料算出波峰整體之熱量、波峰溫度及到達峰頂前之變化率。其次，藉由將升溫速度之常用對數值設為縱軸，將波峰溫度之倒數值設為橫軸而製作Ozawa曲線圖，求出樣品之活化能、頻率因數、及反應次數。然後，可利用活化能、頻率因數及反應次數製作反應預測圖，藉此算出於既定溫度之到達既定反應率的時間。
其次，對上述底部填充材料形成為膜狀之預供給型底部填充膜之製造方法進行說明。首先，使含有膜形成樹脂、環氧樹脂、酸酐、丙烯酸樹脂、及有機過氧化物之接著劑組成物溶解於溶劑中。作為溶劑，可 使用甲苯、乙酸乙酯等、或該等之混合溶劑。於製備樹脂組成物後，利用棒式塗佈機、塗佈裝置等塗佈於剝離基材上。
剝離基材例如係由如下積層構造構成，而防止組成物之乾燥，並且維持組成物之形狀，上述積層構造係將聚矽氧等剝離劑塗佈於PET(Poly Ethylene Terephthalate，聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene，延伸聚丙烯)、PMP(Poly-4-methylpentene-1，聚-4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene，聚四氟乙烯)等而成。
其次，藉由熱烘箱、加熱乾燥裝置等使塗佈於剝離基材上之樹脂組成物乾燥。藉此，可獲得既定厚度之預供給型底部填充膜。
<2.半導體裝置之製造方法>
其次，對使用上述預供給型底部填充膜之半導體裝置之製造方法進行說明。
圖4係表示本實施形態之半導體裝置的製造方法之流程圖。如圖4所示，本實施形態之半導體裝置之製造方法含有：底部填充膜貼附步驟S1、切割步驟S2、半導體晶片搭載步驟S3、及熱壓接步驟S4。
圖5係示意地表示在晶圓上貼附底部填充膜之步驟的立體圖。如圖5所示，底部填充膜貼附步驟S1係藉由具有大於晶圓1直徑之直徑且具有環狀或框狀框架的治具3以固定晶圓1，於晶圓1上貼附底部填充膜2。底部填充膜2係於切割晶圓1時保護並固定晶圓1，於拾取時作為保持之切割膠帶發揮功能。再者，於晶圓1內嵌製作有大量IC(Integrated Circuit)，於晶圓1之接著面對每個如圖1所示般藉由劃線劃分之半導體晶片10設置附焊料電極。
圖6係示意地表示切割晶圓之步驟之立體圖。如圖6所示，切割步驟S2係沿劃線按壓刀片4來切削晶圓1，而分割成各個半導體晶片。
圖7係示意地表示拾取半導體晶片之步驟之立體圖。如圖7所示，各附底部填充膜之半導體晶片10係於保持底部填充膜之狀態下被拾取。
如圖2所示，半導體晶片搭載步驟S3係將附底部填充膜之半導體晶片10與電路基板30經由底部填充膜進行配置。又，將附底部填充膜之半導體晶片10以附焊料電極與對向電極32對向之方式進行位置對準而配置。然後，藉由加熱接合機，於使底部填充膜產生流動性但未發生正式硬化之程度的既定溫度、壓力、時間之條件下進行加熱按壓而搭載。
搭載時之溫度條件較佳為30℃以上155℃以下。又，壓力條件較佳為50N以下，更佳為40N以下。又，時間條件較佳為0.1秒以上10秒以下，更佳為0.1秒以上1.0秒以下。藉此，可成為不使附焊料電極熔融而與電路基板30側之電極接觸之狀態，可成為底部填充膜未完全硬化之狀態。又，由於在低溫下進行固定，故可抑制空隙之產生，減少對半導體晶片10之損壞。
以下之熱壓接步驟S4例如係於以既定升溫速度自第1溫度升溫至第2溫度之接合條件下，使附焊料電極之焊料熔融而形成金屬鍵，並且使底部填充膜完全硬化。
第1溫度較佳與底部填充材料之最低熔融黏度到達溫度大致相同，較佳為50℃以上150℃以下。藉此，可使底部填充材料之硬化行為與接合條件吻合，可抑制空隙之產生。
又，升溫速度較佳為50℃/sec以上150℃/sec以下。又，第2溫度亦取決於焊料之種類，較佳為200℃以上280℃以下，更佳為220℃以上260℃以下。藉此，可使附焊料電極與基板電極進行金屬鍵結，並且使底部填充膜完全硬化，而將半導體晶片10之電極與電路基板30之電極電性地、機械性地連接。
又，於熱壓接步驟S4中，接合頭至搭載後之底部填充膜的開始熔融溫度為止係藉由樹脂之彈性模數而保持為一定高度，其後因升溫所伴隨之樹脂熔融而瞬間下降，到達頭之最低點。該最低點係根據頭之下降速度與樹脂之硬化速度的關係而決定。樹脂硬化進一步進行後，頭之高度隨著樹脂及頭之熱膨脹而緩慢地上升。如此，藉由在自第1溫度升溫至第2溫度之時間內使接合頭下降至最低點，可抑制隨著樹脂熔融之空隙產生。
如此，本實施形態之半導體裝置之製造方法係藉由將底部填充材料預先貼合於形成有附焊料電極之半導體晶片，而可實現無空隙構裝及良好之焊接性，上述底部填充材料含有環氧樹脂及硬化劑，藉由使用示差掃描熱量計之小澤法所算出之於240℃之反應率到達20%之時間為2.0sec以下，反應率到達60%之時間為3.0sec以上。
再者，上述實施形態係使底部填充膜作為切割膠帶發揮功能，但並不限定於此，亦可另外使用切割膠帶，於切割後使用底部填充膜進行覆晶構裝。
[其他實施形態]
又，本技術亦可應用於藉由向設置於半導體晶片之小孔內填充金屬， 而電連接堆積成夾層狀之多個晶片基板的TSV(Through Silicon Via，矽穿孔)技術。
即，亦可應用於將具有形成有附焊料電極之第一面、及於第一面之相反側形成有與附焊料電極對向之對向電極的第二面之多個晶片基板積層的半導體裝置之製造方法。
於此情形時，於第一晶片基板之第一面側貼附有底部填充膜之狀態下，搭載於第二晶片基板之第二面。其後，可藉由在附焊料電極之焊料的熔點以上之溫度將第一晶片基板之第一面與第二晶片基板之第二面熱壓接，而獲得積層有多個晶片基板之半導體裝置。
[實施例]
<3.實施例>
以下，對本發明之實施例進行說明。於本實施例中，製作預供給型底部填充膜，利用DSC-小澤法算出到達既定反應率之時間，算出既定反應率之黏度。然後，使用底部填充膜將具有附焊料電極之第一IC晶片、及具有與其對向之電極的第二IC晶片連接而製作構裝體，對空隙及焊接性進行評價。再者，本發明並不限定於該等實施例。
構裝體之製作、到達既定反應率之時間之算出、既定反應率之黏度算出、空隙之評價及焊接性之評價係以如下方式進行。
[構裝體之製作]
於50℃、0.5MPa之條件下利用壓製機將底部填充膜貼合於晶圓上，進行切割而獲得具有附焊料電極之第一IC晶片。
第一IC晶片係大小為7mm，厚度為200μm，且具有周邊 配置之凸塊( 30μm、85μm間距、280針)者，該周邊配置之凸塊於厚度10μm之由Cu構成的電極前端形成有厚度10μm之焊料(Sn-3.5Ag、熔點221℃)
又，與其對向之第二IC晶片同樣具有大小為8mm、厚度100μm且於由厚度10μm之Cu構成之電極前端形成有厚度10μm之焊料(Sn-3.5Ag、熔點221℃)的周邊配置之凸塊( 30μm、85μm間距、280針)。
其次，於60℃、0.5秒、30N之條件下利用覆晶接合機將第一IC晶片搭載於第二IC晶片上。
其後，於10秒內使溫度自60℃上升至250℃，利用覆晶接合機進行熱壓接(30N)。進而，於150℃、2小時之條件下進行硬化(cure)而獲得構裝體。再者，使用覆晶接合機時之溫度係藉由熱電偶測定樣品之實際溫度而得者。
[到達既定反應率之時間之算出]
到達既定反應率之時間之算出係根據以下順序而算出。
(1)使用示差掃描熱量計(DSC)，依據隨附於同一裝置之DSC-小澤法軟體手冊中之記述，根據各試樣之等速升溫資料(升溫速度5℃/min、10℃/min、20℃/min)而求出波峰整體之熱量、波峰溫度、及到達峰頂前之變化率。變化率係到達波峰溫度之熱量除以波峰整體之熱量所得的值。
(2)藉由將升溫速度之常用對數值設為縱軸，將波峰溫度之倒數值設為橫軸而製作Ozawa曲線圖後，求出各試樣之活化能、頻率因數、反應次數。
(3)根據(2)中求出之活化能、頻率因數及反應次數製作反應預測圖，根據該圖算出於240℃之反應率到達20%及60%之時間。
[既定反應率之黏度算出]
針對各底部填充膜，使用流變儀(TA公司製造之ARES)於5℃/min、1Hz之條件下測定熔融黏度。又，使用示差掃描熱量計(DSC)於5℃/min之條件下求出波峰整體之熱量、波峰溫度、及到達峰頂前之變化率。變化率係到達波峰溫度之熱量除以波峰整體之熱量所得的值。根據DSC資料求出與20%反應率對應之溫度、及與60%反應率對應之溫度，根據流變儀資料求出與該溫度對應之熔融黏度，求出與反應率20%、60%對應之熔融黏度。
[空隙之評價]
利用SAT(Scanning Acoustic Tomograph，超音波影像裝置)觀察各構裝體，將空隙為IC晶片面積之5%以下者設為○，將空隙超過IC晶片面積之5%者設為×。
[焊接性之評價]
切斷各構裝體，進行剖面研磨，利用SEM(Scanning Electron Microscope，掃描電子顯微鏡)觀察電極間之焊料接合界面。將無焊料接合界面之情況評價為○，將夾入樹脂而存在焊料接合界面之情況評價為×。
<實施例1>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)5.0質量份、苯氧基樹脂(品名：PKHH，聯合碳業公司製造)10.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)15.0質量份、酸酐(品名：MH-700，新日本理化公司製造)9.0質量份、咪 唑(品名：2MZ-A，四國化成工業公司製造)0.3質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)24.0質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.3質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
如圖8所示，實施例1之底部填充膜到達20%之反應率之時間為0.04sec，到達60%之反應率之時間為4.83sec。又，20%之反應率之熔融黏度為5.5E+04Pa‧s，60%之反應率之熔融黏度為1.8E+06Pa‧s。又，空隙之評價為○，焊接性之評價為○。
<實施例2>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)5.0質量份、苯氧基樹脂(品名：PKHH，聯合碳業公司製造)10.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)47.5質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)1.0質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
如圖8所示，實施例2之底部填充膜到達20%之反應率之時間為0.58sec，到達60%之反應率之時間為4.80sec。又，20%之反應率之熔融黏度為5.6E+04Pa‧s，60%之反應率之熔融黏度為1.4E+06Pa‧s。又，空隙之評價為○，焊接性之評價為○。
<實施例3>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)5.0質量份、苯氧基樹脂(品名：PKHH，聯合碳業公司製造)10.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)27.0質量份、酸酐(品名：MH-700，新日本理化公司製造)16.2質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.5質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)4.8質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.1質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
如圖8所示，實施例3之底部填充膜到達20%之反應率之時間為1.71sec，到達60%之反應率之時間為8.18sec。又，20%之反應率之熔融黏度為6.3E+04Pa‧s，60%之反應率之熔融黏度為1.6E+06Pa‧s。又，空隙之評價為○，焊接性之評價為○。
<比較例1>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)5.0質量份、苯氧基樹脂(品名：PKHH，聯合碳業公司製造)10.0質量份、環氧樹脂(品名：HP7200H，大日本油墨化學公司製造)30.0質量份、酸酐(品名：MH-700，新日本理化公司製造)18.0質量份、咪唑(品名：2MZ-A，四國化成工業公司製造)0.5質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
如圖8所示，比較例1之底部填充膜到達20%之反應率之時間為2.45sec，到達60%之反應率之時間為6.48sec。又，20%之反應率之熔融黏度為1.0E+03Pa‧s，60%之反應率之熔融黏度為2.3E+05Pa‧s。又，空隙之評價為×，焊接性之評價為○。
<比較例2>
如表1所示，調配丙烯酸橡膠聚合物(品名：Teisan Resin SG-P3，長瀨化成公司製造)5.0質量份、苯氧基樹脂(品名：PKHH，聯合碳業公司製造)10.0質量份、丙烯酸樹脂(品名：DCP，新中村化學公司製造)48.0質量份、起始劑(品名：Perbutyl Z，日本油脂公司製造)0.5質量份、填料A(品名：SO-E5，Admatechs公司製造)31.5質量份、及填料B(品名：艾羅技RY200，日本艾羅技公司製造)5.0質量份，而製備底部填充膜之樹脂組成物。利用棒式塗佈機將其塗佈於經剝離處理之PET(Polyethylene terephthalate)，利用80℃之烘箱乾燥3分鐘，製作厚度40μm之底部填充膜(保護剝離PET(25μm)/底部填充膜(40μm)/基底剝離PET(50μm))。
如圖8所示，比較例2之底部填充膜到達20%之反應率之時間為0.02sec，到達60%之反應率之時間為0.07sec。又，20%之反應率之熔融黏度為1.1E+06Pa‧s，60%之反應率之熔融黏度為1.0E+07Pa‧s以上。又，空隙之評價為○，焊接性之評價為×。
比較例1中，由於反應率到達20%之時間超過2.0sec，故而產生空隙。又，比較例1中，由於反應率為20%時之黏度未達0.2×104Pa‧s，故空隙殘留。
又，比較例2中，由於反應率到達60%之時間未達3.0sec， 故而無法獲得良好之焊接。又，比較例2中，由於反應率為60%時之黏度超過500×104pa‧s，故而無法獲得良好之焊接。
另一方面，實施例1~3中，240℃之反應率到達20%之時間為2.0sec以下，反應率到達60%之時間為3.0sec以上，因此可實現無空隙構裝及良好之焊接性。

Claims (8)

  1. 一種底部填充材料，係於將形成有附焊料電極之半導體晶片搭載於形成有與附焊料電極對向之對向電極的電子零件之前，被預先貼合於半導體晶片，該底部填充材料含有環氧樹脂及硬化劑，藉由使用示差掃描熱量計之小澤法所算出之於240℃之反應率到達20%之時間為2.0sec以下，該反應率到達60%之時間為3.0sec以上。
  2. 如申請專利範圍第1項之底部填充材料，其中，該反應率為20%時之黏度為0.2×104Pa‧s以上，該反應率為60%時之黏度為500×104Pa‧s以下。
  3. 如申請專利範圍第1或2項之底部填充材料，其中，該環氧樹脂為倍環戊二烯型環氧樹脂，該硬化劑為脂肪族酸酐或咪唑系硬化劑。
  4. 如申請專利範圍第1或2項之底部填充材料，其進一步含有丙烯酸樹脂及有機過氧化物。
  5. 如申請專利範圍第3項之底部填充材料，其進一步含有丙烯酸樹脂及有機過氧化物。
  6. 如申請專利範圍第4項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  7. 如申請專利範圍第5項之底部填充材料，其中，該丙烯酸樹脂為2官能(甲基)丙烯酸酯，該有機過氧化物為過氧化酯。
  8. 一種半導體裝置之製造方法，其具有：搭載步驟：將形成有附焊料電極且於該電極面貼合有底部填充材 料之半導體晶片搭載於形成有與該附焊料電極對向之對向電極的電子零件；及熱壓接步驟：將該半導體晶片與該電子零件熱壓接，該底部填充材料含有環氧樹脂及酸酐，藉由使用示差掃描熱量計之小澤法所算出之於240℃之反應率到達20%之時間為2.0sec以下，該反應率到達60%之時間為3.0sec以上。
TW103131083A 2013-09-27 2014-09-10 底部塡充材料及使用其之半導體裝置的製造方法 TWI649843B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP2013-201613 2013-09-27
JP2013201613A JP6069153B2 (ja) 2013-09-27 2013-09-27 アンダーフィル材、及びこれを用いた半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW201528451A true TW201528451A (zh) 2015-07-16
TWI649843B TWI649843B (zh) 2019-02-01

Family

ID=52743021

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103131083A TWI649843B (zh) 2013-09-27 2014-09-10 底部塡充材料及使用其之半導體裝置的製造方法

Country Status (7)

Country Link
US (2) US9653371B2 (zh)
EP (1) EP3051580B1 (zh)
JP (1) JP6069153B2 (zh)
KR (1) KR102321668B1 (zh)
CN (1) CN104956471B (zh)
TW (1) TWI649843B (zh)
WO (1) WO2015045877A1 (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6129696B2 (ja) * 2013-09-11 2017-05-17 デクセリアルズ株式会社 アンダーフィル材、及びこれを用いた半導体装置の製造方法
US9806046B2 (en) * 2014-03-13 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor device structure and manufacturing method
KR102019468B1 (ko) * 2016-11-29 2019-09-06 주식회사 엘지화학 반도체용 접착 필름 및 반도체 장치
US11309278B2 (en) 2018-10-29 2022-04-19 Applied Materials, Inc. Methods for bonding substrates
JP7390824B2 (ja) * 2019-08-28 2023-12-04 デクセリアルズ株式会社 半導体装置の製造方法
CN112969307B (zh) * 2021-02-01 2024-02-09 深圳瑞君新材料技术有限公司 一种碳基填充材料的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7124864B2 (en) * 2002-09-09 2006-10-24 Suspa Incorporated Quick release socket connector
US20040101688A1 (en) * 2002-11-22 2004-05-27 Slawomir Rubinsztajn Curable epoxy compositions, methods and articles made therefrom
JP4170839B2 (ja) * 2003-07-11 2008-10-22 日東電工株式会社 積層シート
KR100792056B1 (ko) * 2004-01-08 2008-01-04 히다치 가세고교 가부시끼가이샤 폴리우레탄이미드수지, 접착제 조성물, 및 회로접속용접착제 조성물
KR20080030581A (ko) * 2005-05-31 2008-04-04 스미토모 베이클리트 컴퍼니 리미티드 프리어플리케이션용 봉지 수지 조성물, 이를 이용한반도체장치 및 그 제조방법
JP5272285B2 (ja) * 2005-09-26 2013-08-28 住友ベークライト株式会社 プリアプライド用封止樹脂組成物及びそれを用いた半導体装置の製造方法
KR101139984B1 (ko) * 2005-12-26 2012-05-02 히다치 가세고교 가부시끼가이샤 접착제 조성물, 회로 접속 재료 및 회로 부재의 접속 구조
US9024455B2 (en) * 2010-05-26 2015-05-05 Hitachi Chemical Company, Ltd. Semiconductor encapsulation adhesive composition, semiconductor encapsulation film-like adhesive, method for producing semiconductor device and semiconductor device
JP5353449B2 (ja) 2008-05-28 2013-11-27 日立化成株式会社 半導体装置の製造方法、半導体封止用接着剤及び半導体装置
JP4623224B2 (ja) * 2008-06-26 2011-02-02 日立化成工業株式会社 樹脂フィルムシート及び電子部品
JP5224111B2 (ja) * 2008-08-29 2013-07-03 日立化成株式会社 半導体ウェハ加工用接着フィルム
JP5732815B2 (ja) * 2009-10-30 2015-06-10 日立化成株式会社 感光性接着剤組成物、並びにそれを用いたフィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、接着剤層付透明基板、及び半導体装置。
JP5925460B2 (ja) * 2011-09-28 2016-05-25 日立化成株式会社 フィルム状接着剤およびこれを用いた半導体装置の製造方法
JP6009860B2 (ja) * 2011-11-09 2016-10-19 積水化学工業株式会社 半導体装置の製造方法
JP6047888B2 (ja) * 2012-02-24 2016-12-21 日立化成株式会社 半導体用接着剤及び半導体装置の製造方法
JP5908306B2 (ja) * 2012-03-01 2016-04-26 積水化学工業株式会社 半導体接合用接着剤及び半導体接合用接着フィルム

Also Published As

Publication number Publication date
JP2015070043A (ja) 2015-04-13
KR102321668B1 (ko) 2021-11-04
EP3051580A4 (en) 2017-07-05
WO2015045877A1 (ja) 2015-04-02
CN104956471A (zh) 2015-09-30
TWI649843B (zh) 2019-02-01
CN104956471B (zh) 2020-05-01
JP6069153B2 (ja) 2017-02-01
US20170221787A1 (en) 2017-08-03
EP3051580B1 (en) 2022-10-26
KR20160064032A (ko) 2016-06-07
US20150348859A1 (en) 2015-12-03
US10062625B2 (en) 2018-08-28
EP3051580A1 (en) 2016-08-03
US9653371B2 (en) 2017-05-16

Similar Documents

Publication Publication Date Title
TWI552294B (zh) A circuit-connecting material, and a method of manufacturing the semiconductor device using the same
TWI695458B (zh) 底部塡充材料及使用其之半導體裝置的製造方法
JP6438790B2 (ja) 半導体装置の製造方法、及びアンダーフィルフィルム
TWI611526B (zh) 底部塡充材料及使用其之半導體裝置的製造方法
US10062625B2 (en) Underfill material and method for manufacturing semiconductor device using the same
JP6069143B2 (ja) アンダーフィル材、及びこれを用いた半導体装置の製造方法
TWI649842B (zh) 底部塡充材料及使用其之半導體裝置的製造方法
TW201534631A (zh) 底部塡充材料及使用其之半導體裝置的製造方法