TW201527471A - 半導體接合用接著劑、半導體裝置之製造方法、及半導體裝置 - Google Patents
半導體接合用接著劑、半導體裝置之製造方法、及半導體裝置 Download PDFInfo
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Abstract
本發明之目的在於提供一種助焊性及連接可靠性優異,且儲存穩定性較高之半導體接合用接著劑。又,本發明之目的在於提供一種使用該半導體接合用接著劑之半導體裝置之製造方法、及使用該半導體接合用接著劑所製造之半導體裝置。本發明係一種半導體接合用接著劑,其係含有環氧化合物、硬化劑、硬化促進劑及助焊活性劑者,並且上述硬化促進劑含有胺化合物,上述助焊活性劑為有機酸助焊活性劑,上述硬化促進劑相對於上述半導體接合用接著劑中所含之具有環氧基之成分之合計100重量份的摻合量為2~20重量份,且上述硬化促進劑相對於上述助焊活性劑100重量份的摻合量為40~500重量份。
Description
本發明係關於一種助焊性及連接可靠性優異,且儲存穩定性較高之半導體接合用接著劑。又,本發明係關於一種使用該半導體接合用接著劑之半導體裝置之製造方法、及使用該半導體接合用接著劑所製造之半導體裝置。
隨著半導體裝置之小型化及高密度化,覆晶安裝作為將半導體晶片安裝至電路基板上之方法而受到關注並迅速普及。覆晶安裝由於係將由焊料等所構成之多個凸塊電極直接一次性地接合於電路基板上,故而與習知之打線接合方式相比,具有可縮小安裝面積、電氣特性良好、無需模塑密封等優點。
對於覆晶安裝,要求確保接合部分之連接可靠性。
因此,近年來提出有於半導體晶圓或半導體晶片表面或電路基板上供給糊狀接著劑(NCP)或膜狀接著劑(NCF)後,對半導體晶片進行加熱及/或加壓接合之方法等所謂先塗佈型之覆晶安裝(例如專利文獻1)。又,亦提出有將使半導體晶圓進行薄化之背面研磨步驟中所使用之背面研磨帶與NCF一體化而成之BG-NCF膜(例如專利文獻2)。
然而,對於被供給至半導體晶圓或半導體晶片表面或電路基板上之糊狀或膜狀接著劑,要求進一步之連接可靠性。
專利文獻1:日本特開2009-260230號公報
專利文獻2:日本特開2008-16624號公報
本發明者等人為了提昇連接可靠性,著眼於糊狀或膜狀接著劑中所含之助焊活性劑。助焊活性劑發揮如下作用:去除設置於半導體晶片之凸塊電極之焊料表面之氧化被膜,使焊料對於由銅等金屬所構成之被接合部而潤濕擴散,並進行接合。若助焊活性劑之效果(助焊性)不足,則接合部分之焊料形狀會變形,連接可靠性降低。另一方面,藉由提高助焊性,可期待連接可靠性之提昇。
本發明者等人研究了使用助焊性優異之有機酸作為助焊活性劑。然而,有機酸存在使糊狀或膜狀接著劑之儲存穩定性降低之缺點,含有有機酸之糊狀或膜狀接著劑存在隨著時間經過,黏度會上升、或使焊料潤濕擴散之效果降低之情況。
本發明之目的在於提供一種助焊性及連接可靠性優異,且儲存穩定性較高之半導體接合用接著劑。又,本發明之目的在於提供一種使用該半導體接合用接著劑之半導體裝置之製造方法、及使用該半導體接合用接著劑所製造之半導體裝置。
本發明係一種半導體接合用接著劑,其係含有環氧化合物、硬化劑、硬化促進劑及助焊活性劑者,並且上述硬化促進劑含有胺化合物,
上述助焊活性劑為有機酸助焊活性劑,相對於上述半導體接合用接著劑中所含之具有環氧基之成分之合計100重量份,上述硬化促進劑的摻合量為2~20重量份,且相對於上述助焊活性劑100重量份,上述硬化促進劑之摻合量為40~500重量份。
以下,對本發明進行詳細說明。
本發明者等人發現,不限於糊、膜等形態,於含有環氧化合物、硬化劑、硬化促進劑及助焊活性劑之半導體接合用接著劑中,使用胺化合物作為硬化促進劑,且使用有機酸助焊活性劑作為助焊活性劑,且將硬化促進劑之摻合量調整至特定範圍,藉此可製成助焊性及連接可靠性優異,且亦具有較高之儲存穩定性的半導體接合用接著劑,從而完成本發明。
於本說明書中,所謂助焊性,意指去除焊料表面之氧化被膜,使焊料對於由銅等金屬所構成之被接合部而潤濕擴散,並進行接合之功能。
本發明之半導體接合用接著劑之形態並無特別限定,可為糊,亦可為膜。
本發明之半導體接合用接著劑含有環氧化合物。於本發明之半導體接合用接著劑為糊形態之情形時,上述環氧化合物並無特別限定,例如可列舉:雙酚A型、雙酚F型、雙酚AD型、雙酚S型等雙酚型環氧化合物,苯酚酚醛清漆型、甲酚酚醛清漆型等酚醛清漆型環氧化合物,間苯二酚型環氧化合物,三苯酚甲烷三環氧丙醚等芳香族環氧化合物,萘型環氧化合物、茀型環氧化合物、二環戊二烯型環氧化合物、聚醚改質環氧化合物、二苯甲酮型環氧化合物、苯胺型環氧化合物、NBR改質環氧化合物、CTBN改質環氧化合物、及該等之氫化物等。其中,就容易獲得快速硬化性之方
面而言,較佳為苯胺型環氧化合物。該等環氧化合物可單獨使用,亦可將2種以上併用。
上述苯胺型環氧化合物之中,作為市售品,例如可列舉EP-3900S、EP-3950S(ADEKA公司製造)等。
於本發明之半導體接合用接著劑為糊形態之情形時,本發明之半導體接合用接著劑除了上述環氧化合物以外亦可含有環硫化合物(episulfide)。上述環硫化合物只要具有環硫基,則無特別限定,例如可列舉將環氧化合物之環氧基之氧原子取代為硫原子之化合物。
作為上述環硫化合物,具體而言,例如可列舉:雙酚型環硫化合物(將雙酚型環氧化合物之環氧基之氧原子取代為硫原子之化合物)、氫化雙酚型環硫化合物、二環戊二烯型環硫化合物、聯苯型環硫化合物、苯酚酚醛清漆型環硫化合物、茀型環硫化合物、聚醚改質環硫化合物、丁二烯改質環硫化合物、三環硫化合物、萘型環硫化合物等。其中,較佳為萘型環硫化合物。該等環硫化合物可單獨使用,亦可將2種以上併用。
再者,關於將氧原子取代為硫原子,可將環氧基之至少一部分中之氧原子取代為硫原子,亦可將全部環氧基之氧原子取代為硫原子。
上述環硫化合物之中,作為市售品,例如可列舉YL-7007(氫化雙酚A型環硫化合物,三菱化學公司製造)等。又,上述環硫化合物例如係使用硫氰酸鉀、硫脲等硫化劑,由環氧化合物而容易地合成。
於本發明之半導體接合用接著劑為膜形態之情形時,上述環氧化合物並無特別限定,例如可列舉軟化點為150℃以下之環氧樹脂、常溫下為液體或結晶性固體之環氧樹脂等。更具體而言,例如可列舉雙酚A型
環氧樹脂、雙酚F型環氧樹脂、苯酚酚醛清漆型環氧樹脂、甲酚酚醛清漆型環氧樹脂等。該等環氧化合物可單獨使用,亦可將2種以上併用。
又,作為上述環氧化合物,較佳為主鏈具有多環式烴骨架之
環氧樹脂。藉由使用上述主鏈具有多環式烴骨架之環氧樹脂,由於為剛性且分子之運動被抑制,故而可製成機械強度及耐熱性優異之硬化物,又,由於吸水性降低,故而可製成耐濕性優異之硬化物。
上述主鏈上具有多環式烴骨架之環氧樹脂並無特別限定,例
如可列舉:二氧化二環戊二烯、具有二環戊二烯骨架之苯酚酚醛清漆環氧樹脂等二環戊二烯型環氧樹脂、1-環氧丙基萘、2-環氧丙基萘、1,2-二環氧丙基萘、1,5-二環氧丙基萘、1,6-二環氧丙基萘、1,7-二環氧丙基萘、2,7-二環氧丙基萘、三環氧丙基萘、1,2,5,6-四環氧丙基萘等萘型環氧樹脂、四羥基苯乙烷型環氧樹脂、四(環氧丙氧基苯基)乙烷、碳酸3,4-環氧-6-甲基環己基甲酯3,4-環氧-6-甲基環己酯等。該等主鏈具有多環式烴骨架之環氧樹脂可單獨使用,亦可將2種以上併用。其中,較佳為二氧化二環戊二烯。
於本發明之半導體接合用接著劑為膜形態之情形時,本發明
之半導體接合用接著劑亦可進而含有具有可與上述環氧化合物反應之官能基之高分子化合物(以下,亦簡稱為高分子化合物)。上述高分子化合物發揮作為造膜成分之作用。又,藉由含有上述高分子化合物,可使半導體接合用接著劑之硬化物具有韌性,表現出優異之耐衝擊性。
上述高分子化合物並無特別限定,例如可列舉具有胺基、胺酯基、醯亞胺基、羥基、羧基等之高分子化合物等。
於本發明之半導體接合用接著劑為膜形態之情形時,本發明
之半導體接合用接著劑亦可進而含有具有環氧基之高分子化合物。藉由含有上述具有環氧基之高分子化合物,使半導體接合用接著劑之硬化物兼具源自上述環氧化合物之優異之機械強度、耐熱性及耐濕性與源自上述具有環氧基之高分子化合物之優異之韌性,而可表現出較高之接合可靠性及連接可靠性。
上述具有環氧基之高分子化合物只要為末端及/或側鏈(側
鏈位)具有環氧基之高分子化合物,則無特別限定,例如可列舉:含環氧基之丙烯酸橡膠、含環氧基之丁二烯橡膠、雙酚型高分子量環氧樹脂、含環氧基之苯氧基樹脂、含環氧基之丙烯酸樹脂、含環氧基之胺酯樹脂、含環氧基之聚酯樹脂等。
本發明之半導體接合用接著劑含有硬化劑,且為了調整硬化
速度或硬化物之物性等而進而含有硬化促進劑。
上述硬化促進劑含有胺化合物(以下,亦稱為胺系硬化促進劑)。本發明之半導體接合用接著劑由於含有上述胺化合物,故而即便含有如下述之有機酸助焊活性劑,亦具有較高之儲存穩定性。再者,即便含有上述胺化合物,於不含有有機酸助焊活性劑之情形時,半導體接合用接著劑之儲存穩定性亦會降低。即,藉由一併含有上述胺化合物與有機酸助焊活性劑,本發明之半導體接合用接著劑成為具有較高之儲存穩定性者。
上述胺系硬化促進劑只要為作為上述環氧化合物之硬化促
進劑而發揮作用之胺化合物,則無特別限定,例如可列舉雙氰胺、改質脂肪族胺、胺加成物、微膠囊型胺及咪唑等。該等胺系硬化促進劑可單獨使用,亦可將2種以上併用。
上述胺系硬化促進劑只要為作為上述環氧化合物之硬化促
進劑而發揮作用之胺化合物,則無特別限定,例如可列舉咪唑系硬化促進劑、三級胺系硬化促進劑等。其中,較佳為咪唑系硬化促進劑。咪唑系硬化促進劑由於容易控制反應系統,故而容易調整硬化速度或硬化物之物性等。
上述咪唑系硬化促進劑並無特別限定,例如可列舉:利用氰
乙基保護咪唑之1位的1-氰乙基-2-苯基咪唑、利用異三聚氰酸保護鹼性之咪唑系化合物(商品名「2MA-OK」,四國化成工業公司製造)、液狀咪唑(商品名「FUJICURE 7000」,T&K TOKA公司製造)、2-乙基-4-甲基咪唑、1-甲基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-氰乙基-2-甲基咪唑、1-苄基-2-乙基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-苯基-4,5-二(氰基乙氧基甲基)咪唑、1,8-二氮雜雙環(5.4.0)十一碳烯-7等咪唑化合物、及該等之衍生物等。該等咪唑系硬化促進劑可單獨使用,亦可將2種以上併用。
又,關於上述硬化促進劑之摻合量,相對於半導體接合用接
著劑中所含之具有環氧基之成分之合計100重量份,其下限為2重量份,上限為20重量份,較佳下限為3重量份,較佳上限為15重量份,更佳上限為10重量份。藉由設為此種範圍之摻合量,即便含有如下述之有機酸助焊活性劑,半導體接合用接著劑之儲存穩定性亦進一步變高。
再者,所謂半導體接合用接著劑中所含之具有環氧基之成分之合計,意指例如上述環氧化合物、具有環氧基之高分子化合物等具有環氧基之成分之合計。
又,關於上述硬化促進劑之摻合量,相對於助焊活性劑100重量份,其下限為40重量份,上限為500重量份,較佳下限為50重量份,較佳上限為200重量份。藉由設為此種範圍之摻合量,即便含有如下述之有機酸助焊活性劑,半導體接合用接著劑之儲存穩定性亦進一步變高。
若上述硬化促進劑含有胺化合物,則上述硬化劑及上述硬化
促進劑亦可進而含有非胺化合物。
於上述硬化劑含有非胺化合物之情形時,將該非胺化合物稱為非胺系硬化劑,於上述硬化促進劑含有非胺化合物之情形時,將該非胺化合物稱為非胺系硬化促進劑。
上述非胺系硬化劑並無特別限定,例如可列舉酸酐系硬化
劑、酚系硬化劑、陽離子系觸媒型硬化劑等。其中,較佳為酸酐系硬化劑。
酸酐系硬化劑由於硬化速度較快,故而藉由使用酸酐系硬化劑,可提高半導體接合用接著劑之快速硬化性,而可有效地抑制孔隙。
上述酸酐系硬化劑並無特別限定,例如可列舉:鄰苯二甲酸
酐、偏苯三甲酸酐、均苯四甲酸二酐、二苯甲酮四羧酸酐、乙二醇雙(偏苯三酸酐)酯、甘油三(偏苯三酸酐)酯、甲基四氫鄰苯二甲酸酐、四氫鄰苯二甲酸酐、耐地酸酐、甲基耐地酸酐、三烷基四氫鄰苯二甲酸酐、六氫鄰苯二甲酸酐、甲基六氫鄰苯二甲酸酐、5-(2,5-二側氧基四氫呋喃基)-3-甲基-3-環己烯-1,2-二羧酸酐、三烷基四氫鄰苯二甲酸酐-順丁烯二酸酐加成物、十二碳烯基琥珀酸酐、聚壬二酸酐、聚十二烷二酸酐、氯橋酸酐等。該等酸酐系硬化劑可單獨使用,亦可將2種以上併用。
上述非胺系硬化劑之摻合量並無特別限定,相對於半導體接
合用接著劑中所含之環氧基之總量,較佳下限為60當量,較佳上限為110當量。
上述非胺系硬化促進劑之摻合量並無特別限定,與上述胺系
硬化促進劑同樣地,相對於半導體接合用接著劑中所含之硬化劑之合計100重量份,較佳下限為1重量份,較佳上限為20重量份。
亦可將上述硬化劑與上述硬化促進劑組合而使用。作為上述
硬化劑與上述硬化促進劑之組合,更佳為上述非胺系硬化劑與上述胺系硬化促進劑之組合,尤佳為上述酸酐系硬化劑與上述咪唑系硬化促進劑之組合。藉由將上述酸酐系硬化劑與上述咪唑系硬化促進劑併用,可獲得耐熱性優異之硬化物。
本發明之半導體接合用接著劑含有助焊活性劑。
上述助焊活性劑為有機酸助焊活性劑。本發明之半導體接合用接著劑由於含有上述有機酸助焊活性劑,故而成為助焊性優異者,接合部分之連接可靠性提昇。
上述有機酸助焊活性劑並無特別限定,例如可列舉戊二酸、
琥珀酸等羧酸等。該等有機酸助焊活性劑可單獨使用,亦可將2種以上併用。
上述有機酸助焊活性劑之摻合量並無特別限定,相對於半導
體接合用接著劑中所含之具有環氧基之成分之合計100重量份,較佳下限為0.5重量份,較佳上限為15重量份。若摻合量未達0.5重量份,則因半導體接合用接著劑之助焊性降低,存在接合部分之焊料形狀會變形之情況,而存在無法充分地提高連接可靠性之情況。若摻合量超過15重量份,則存
在半導體接合用接著劑之儲存穩定性降低之情況,而存在隨著時間經過,黏度上升、或使焊料潤濕擴散之效果降低之情況。摻合量之更佳下限為1.0重量份,更佳上限為10重量份。
本發明之半導體接合用接著劑亦可視需要含有無機填料。藉
由使用上述無機填料,可提高硬化物之機械強度及耐熱性,又,可使硬化物之線膨脹係數降低,而提高接合可靠性。
上述無機填料並無特別限定,例如可列舉由二氧化矽
(silica)、氧化鋁、氮化鋁、氮化硼、氮化矽、碳化矽、氧化鎂、氧化鋅等所構成之無機填料。其中,就流動性優異之方面而言,較佳為球狀二氧化矽。
上述無機填料之摻合量並無特別限定,於半導體接合用接著劑中之較佳下限為20重量%,較佳上限為70重量%。
又,本發明之半導體接合用接著劑可視需要含有具有(甲基)
丙烯醯基之環氧樹脂、丙烯酸樹脂、多官能(甲基)丙烯酸酯化合物、聚醯亞胺、聚醯胺、苯氧基樹脂等一般樹脂,亦可含有矽烷偶合劑、鈦偶合劑、增黏劑、消泡劑、橡膠粒子等添加劑。
於本發明之半導體接合用接著劑為膜形態之情形時,由本發
明之半導體接合用接著劑所構成之接著劑層之厚度並無特別限定,較佳為相對於凸塊電極之高度而為50~150%,較佳下限為5μm,較佳上限為100μm。
於本發明之半導體接合用接著劑為膜形態之情形時,若該膜
具有由本發明之半導體接合用接著劑所構成之接著劑層,則可為具有基材
之支持型之膜,亦可為不具有基材之非支持型之膜。
上述基材並無特別限定,例如可列舉由聚對苯二甲酸乙二酯
(PET)、聚碳酸酯、聚甲基丙烯酸甲酯、聚萘二甲酸乙二酯、聚對苯二甲酸丁二酯、聚乙烯、聚丙烯等所構成之膜等。其中,較佳為由PET所構成之膜。
上述基材之厚度並無特別限定,較佳下限為5μm,較佳上限為200μm,更佳下限為10μm,更佳上限為50μm。
又,於本發明之半導體接合用接著劑為膜形態之情形時,該
膜亦可於上述基材與由本發明之半導體接合用接著劑所構成之接著劑層之間,具有黏著性或非黏著性之凸塊電極保護層。
藉由設置上述凸塊電極保護層,即便於由本發明之半導體接合用接著劑所構成之接著劑層之厚度相對於凸塊電極之高度而較薄之情形時,亦可抑制將具有由半導體接合用接著劑所構成之接著劑層之膜貼合於表面具有凸塊電極之晶圓上之層壓步驟、對晶圓自背面進行研削之背面研磨步驟等中之凸塊電極之變形、損傷等。
上述凸塊電極保護層並無特別限定,作為上述非黏著性之凸
塊電極保護層,例如可列舉含有聚乙烯(PE)及聚丙烯(PP)等聚烯烴樹脂、乙烯-乙酸乙烯酯共聚物(EVA)、聚氯乙烯(PVC)、聚(甲基)丙烯酸烷基酯、聚乙烯醇縮丁醛(PVB)、聚乙烯醇、聚乙烯醇縮乙醛、聚胺酯(PU)、聚四氟乙烯(PTFE)及該等之共聚物等的透明層、具有網狀結構之層、開設有孔之層等。作為上述黏著性之凸塊電極保護層,例如可列舉丙烯酸黏著劑層、胺酯黏著劑層、聚矽氧黏著劑層等。其中,較佳為聚乙烯(PE)
層、乙烯-乙酸乙烯酯共聚物(EVA)層、丙烯酸黏著劑層、胺酯黏著劑層。
上述凸塊電極保護層之厚度並無特別限定,較佳下限為5
μm,較佳上限為100μm,更佳下限為10μm,更佳上限為50μm。
於本發明之半導體接合用接著劑為糊形態之情形時,製造該
糊之方法並無特別限定,例如可列舉將環氧化合物、硬化劑、硬化促進劑、助焊活性劑、及視需要摻合之各材料使用勻相分散機、行星式攪拌機等進行攪拌混合之方法等。
於本發明之半導體接合用接著劑為膜形態之情形時,製造該膜之方法並無特別限定,例如可列舉如下方法:將環氧化合物、硬化劑、硬化促進劑、助焊活性劑、及視需要摻合之各材料使用勻相分散機與適當之溶劑一併進行攪拌混合而製備接著劑溶液,將接著劑溶液塗佈至基材上,使之乾燥而形成接著劑層之方法;將接著劑溶液塗佈至附脫模劑之膜上,使之乾燥而形成接著劑層後,將接著劑層與基材貼合之方法等。
本發明之半導體接合用接著劑無論為糊、膜等形態,均於例
如將半導體晶片安裝至電路基板時使用,尤其適合用於覆晶安裝。
具體而言,例如可將具有由本發明之半導體接合用接著劑所構成之接著劑層之膜貼合至電路基板上之後,將半導體晶片藉由熱壓接而安裝至電路基板。
又,例如可經過如下步驟而製造半導體裝置,該等步驟為:將具有由本發明之半導體接合用接著劑所構成之接著劑層的膜貼合至表面具有凸塊電極之晶圓之具有上述凸塊電極之面,而設置接著劑層;將上述晶圓連同上述接著劑層一併加以切割,而分割為具有上述接著劑層之半導體晶片;
將具有上述接著劑層之半導體晶片經由上述接著劑層並藉由熱壓接而安裝至電路基板或其他半導體晶片。亦可將具有由本發明之半導體接合用接著劑所構成之接著劑層的膜貼合於兩面具有凸塊電極且單面具有配線之晶圓之具有上述凸塊電極之配線面或與上述配線面相反之具有上述凸塊電極之面,而設置接著劑層。又,該等半導體裝置之製造方法亦為本發明之一。
上述晶圓並無特別限定,例如可列舉由矽、砷化鎵等半導體
所構成且表面具有由金、銅、銀-錫焊料、鋁、鎳等所構成之凸塊電極的晶圓。本發明之半導體接合用接著劑由於係助焊性優異而接合部分之連接可靠性提昇者,故而尤其適合用於上述凸塊電極含有焊料之情形。
將具有由本發明之半導體接合用接著劑所構成之接著劑層的膜貼合於上述晶圓之具有凸塊電極之面的方法並無特別限定,例如可列舉使用真空層疊機等,將膜貼合於上述晶圓之具有凸塊電極之面的方法等。作為真空層疊機,例如可使用名機製作所公司製造之商品名「MVLP-500/600II」、Nichigo-Morton公司製造之商品名「V130」、Takatori公司製造之商品名「ATM-812M」等。
又,例如可將由本發明之半導體接合用接著劑所構成之糊供
給至電路基板上之後,將半導體晶片藉由熱壓接而安裝至電路基板上。又,半導體裝置之製造方法亦為本發明之一,該製造方法係將表面具有凸塊電極之半導體晶片安裝至電路基板或其他半導體晶片上的半導體裝置之製造方法,其具有如下步驟:將由本發明之半導體接合用接著劑所構成之糊劑塗佈至上述電路基板或其他半導體晶片,而形成接著劑層;將上述表面具有凸塊電極之半導體晶片經由上述接著劑層並藉由熱壓接而安裝至上述電
路基板或其他半導體晶片。
上述表面具有凸塊電極之半導體晶片例如係藉由利用切割
將上述表面具有凸塊電極之晶圓進行單片化而獲得。將由本發明之半導體接合用接著劑成構成之糊劑塗佈至上述電路基板或其他半導體晶片之方法並無特別限定,例如可列舉使用分注器之塗佈方法等。
又,使用本發明之半導體接合用接著劑所製造之半導體裝置亦為本發明之一。
藉由本發明,可提供助焊性及連接可靠性優異,且儲存穩定性較高之半導體接合用接著劑。又,藉由本發明,可提供使用該半導體接合用接著劑的半導體裝置之製造方法、及使用該半導體接合用接著劑所製造之半導體裝置。
以下,列舉實施例而進一步詳細說明本發明之態樣,本發明並不僅限定於該等實施例。
(實施例1~18、比較例1~20)
(半導體接合用接著糊或膜之製造)
於實施例1~9、比較例1~10中,依據表1或2所示之組成對各材料使用行星式攪拌機進行攪拌混合而獲得半導體接合用接著糊。
於實施例10~18、比較例11~20中,依據表3或4所示之組成將各材料與甲基乙基酮(MEK)進行混合,使用勻相分散機進行攪拌混合而製備接著劑溶液。將該接著劑溶液以乾燥後之厚度成為35μm之方式塗佈至作為基材之聚對苯二甲酸乙二酯膜(A31,Teijin DuPont公司製造,厚度50μm),於100℃乾燥5分鐘而形成接著劑層,從而獲得半導體接合用接著膜。利用附帶脫模劑之PET膜對所獲得之接著劑層之表面加以保護,直至使用時為止。
將各材料示於以下。
(1)環氧化合物
˙828EL(雙酚A液狀環氧樹脂,三菱化學公司製造)
˙1004AF(雙酚A固形環氧樹脂,三菱化學公司製造)
(2)具有環氧基之高分子化合物(含環氧基之苯氧基樹脂)
˙YP-50(苯氧基樹脂,新日鐵化學公司製造)
(3)硬化劑及硬化促進劑
(i)非胺系硬化劑
˙YH306(酸酐系硬化劑,三菱化學公司製造)
(ii)胺系硬化促進劑
˙2MZA(咪唑系硬化促進劑,四國化成工業公司製造)
˙MY-H(胺加成物硬化促進劑,Ajinomoto Fine-Techno公司製造)
˙F7000(咪唑系硬化促進劑,T&K TOKA公司製造)
(4)有機酸助焊活性劑
˙己二酸(和光純藥工業公司製造)
˙戊二酸(和光純藥工業公司製造)
(5)無機填料(二氧化矽填料)
˙SE-1050(平均粒徑0.25μm,Admatechs公司製造)
˙SE-2050(平均粒徑0.5μm,Admatechs公司製造)
(使用有半導體接合用接著糊之半導體裝置之製作)
準備將具有由焊料所構成之凸塊電極之半導體晶圓(WALTS-TEG MB50-0101JY,焊料之熔融溫度235℃,WALTS公司製造)藉由切割而單片化之半導體晶片、及具有Ni/Au電極之基板(WALTS-KIT MB50-0101JY、WALTS公司製造)。
將實施例1~9、比較例1~10中所獲得之半導體接合用接著糊使用分注器裝置(SHOT MASTER300,Musashi Engineering公司製造),於噴出壓0.4MPa、基板與針之間隙200μm之條件下塗佈至基板。繼而,使用接合裝置(FC-3000,Toray Engineering製造),將預先藉由切割而單片化之半導體晶片於40N、溫度240℃之條件下對滴塗有半導體接合用接著糊之基板壓接10秒種而安裝至基板上,進而於170℃烘箱中加熱1小時,使接著劑層完全硬化,而獲得半導體裝置。
(使用有半導體接合用接著膜之半導體裝置之製作)
準備具有由焊料所構成之凸塊電極之半導體晶圓(WALTS-TEG MB50-0101JY,焊料之熔融溫度235℃,WALTS公司製造)、及具有Ni/Au電極之基板(WALTS-KIT MB50-0101JY,WALTS公司製造)。
將實施例10~18、比較例11~20中所獲得之半導體接合用接著膜之保護接著劑層之附帶脫模劑之PET膜剝離,使用真空層疊機(商
品名「ATM-812M」,Takatori公司製造),將半導體接合用接著膜貼合於晶圓之具有凸塊電極之面。將切割帶(商品名「PE帶#6318-B」,積水化學工業公司製造)貼合於晶圓之未貼合半導體接合用接著膜之側之表面,並安裝至切割框上。繼而,僅留下接著劑層,將半導體接合用接著膜之基材剝離。
繼而,使用切割裝置(商品名「DFD651」,DISCO公司製造),
以進給速度50mm/sec將晶圓連同接著劑層一併切割為7.3mm×7.3mm之晶片尺寸,而分割為具有接著劑層之半導體晶片。將所獲得之具有接著劑層之半導體晶片,使用接合裝置(FC-3000,Toray Engineering製造),於40N、溫度240℃之條件下壓接10秒鐘而安裝至基板上,進而於170℃烘箱中加熱1小時,使接著劑層完全硬化,而獲得半導體裝置。
<評價>
對實施例及比較例中所獲得之半導體接合用接著糊或膜及半導體裝置進行以下之評價。將結果示於表1~4。
(1)連接可靠性(助焊性)
對實施例1~18、比較例1~20中所獲得之半導體裝置,使用研磨機進行剖面研磨,使用顯微鏡觀察電極接合之狀態。將於上下電極間未卡入接著劑且電極接合狀態良好之情形設為○,將於上下電極間卡入有接著劑且上下電極完全未接合之情形設為×。
(2)儲存穩定性
對實施例1~18、比較例1~20中所獲得之半導體接合用接著糊或膜之接著劑層之熔融黏度,使用旋轉式流變儀(VAR-100,Reologica公司製造),
於升溫速度5℃/分鐘、頻率1Hz且30~160℃之條件下進行測定,求出最低熔融黏度(A)。對在室溫(25℃)保管1天後至5天後之接著糊或在室溫(25℃)保管1天後至10天後之接著膜之接著劑層的最低熔融黏度(B)相同地進行測定,對直至B相對於A超過1.2倍所需之時間(1.2倍(熔融)黏度上升時間)進行測定。
(3)潤濕穩定性
求出實施例1~18、比較例1~20中所獲得之半導體接合用接著糊或膜之潤濕穩定性。使用剛製作接著糊後於室溫(25℃)保管1天後至5天後之接著糊或剛製作接著膜後於室溫(25℃)保管1天後至10天後之接著膜,如上述般製造半導體裝置,於接合步驟中,觀察焊料是否充分地潤濕,並測定直至焊料變得充分地潤濕為止之時間。
(4)硬化性
求出實施例1~18、比較例1~20中所獲得之半導體接合用接著糊或膜之硬化性。將接著糊或膜於190℃加熱2小時,將發生硬化之情形設為○,將硬化不良之情形設為×。
藉由本發明,可提供助焊性及連接可靠性優異,且儲存穩定性高之半導體接合用接著劑。又,藉由本發明,可提供使用該半導體接合用接著劑之半導體裝置之製造方法、及使用該半導體接合用接著劑所製造之半導體裝置。
Claims (5)
- 一種半導體接合用接著劑,其係含有環氧化合物、硬化劑、硬化促進劑及助焊活性劑者,其特徵在於:該硬化促進劑含有胺化合物,該助焊活性劑為有機酸助焊活性劑,相對於該半導體接合用接著劑中所含之具有環氧基之成分之合計100重量份,該硬化促進劑之摻合量為2~20重量份,且相對於該助焊活性劑100重量份,該硬化促進劑之摻合量為40~500重量份。
- 一種半導體裝置之製造方法,其具有如下步驟:於表面具有凸塊電極之晶圓之具有該凸塊電極之面,貼合具有由申請專利範圍第1項之半導體接合用接著劑所構成之接著劑層的膜而設置接著劑層;將該晶圓連同該接著劑層一併加以切割,而分割成具有該接著劑層之半導體晶片;及將具有該接著劑層之半導體晶片經由該接著劑層並藉由熱壓接而安裝至電路基板或其他半導體晶片。
- 一種半導體裝置之製造方法,其具有如下步驟:於兩面具有凸塊電極且單面具有配線之晶圓之具有該凸塊電極之配線面或與該配線面相反之具有該凸塊電極之面,貼合具有由申請專利範圍第1項之半導體接合用接著劑所構成之接著劑層的膜而設置接著劑層;將該晶圓連同該接著劑層一併加以切割,而分割為具有該接著劑 層之半導體晶片;及將具有該接著劑層之半導體晶片經由該接著劑層並藉由熱壓接而安裝至電路基板或其他半導體晶片。
- 一種半導體裝置之製造方法,其係將表面具有凸塊電極之半導體晶片安裝至電路基板或其他半導體晶片者,其特徵在於具有如下步驟:將由申請專利範圍第1項之半導體接合用接著劑所構成之糊劑塗佈至該電路基板或其他半導體晶片,而形成接著劑層;將該表面具有凸塊電極之半導體晶片經由該接著劑層並藉由熱壓接而安裝至該電路基板或其他半導體晶片。
- 一種半導體裝置,其使用申請專利範圍第1項之半導體接合用接著劑而製造。
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