TW201519375A - 封裝結構及其製造方法 - Google Patents

封裝結構及其製造方法 Download PDF

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Publication number
TW201519375A
TW201519375A TW103115921A TW103115921A TW201519375A TW 201519375 A TW201519375 A TW 201519375A TW 103115921 A TW103115921 A TW 103115921A TW 103115921 A TW103115921 A TW 103115921A TW 201519375 A TW201519375 A TW 201519375A
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Taiwan
Prior art keywords
dielectric layer
opening
conductive pattern
die
dielectric
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TW103115921A
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English (en)
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TWI511240B (zh
Inventor
王卜
施應慶
盧思維
林俊成
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台灣積體電路製造股份有限公司
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Abstract

本發明之一實施例為一種封裝結構，包括一晶粒，其具有位於一表面上的一接墊；以及一封膠材料至少橫向地封裝此晶粒。透過封膠材料暴露此接墊。此封裝結構更包括一第一介電層位於封膠材料及晶粒之上，一第一導電圖案位於第一介電層之上，以及一第二介電層位於第一導電圖案及第一介電層之上。第一介電層及第二介電層具有一第一開口到達晶粒的接墊。此封裝結構更包括一第二導電圖案位於第二介電層之上及第一開口之中。第二導電圖案鄰接於位在第一開口中之第一介電層的一側壁及位在第一開口中之第二介電層的一側壁。

Description

封裝結構及其製造方法
本發明係有關於一種封裝技術，且特別有關於一種扇出(fan out)封裝結構及其製造方法。
半導體裝置使用於各種電子應用中，舉例而言，諸如個人電腦、手機、數位相機以及其他電子設備。半導體裝置的製造通常是藉由在半導體基板上依序沉積絕緣層或介電層材料、導電層材料以及半導體層材料，接著使用微影製程圖案化所形成的各種材料層，藉以在此半導體基板之上形成電路零件及組件。通常在單一個半導體晶圓上製造數十個或數百個積體電路。藉由沿著切割線切割積體電路，以切割位在晶圓上的各個晶粒。舉例而言，接著將個別的晶粒分別封裝在多晶片模組中或其它類型的封裝結構中。
在半導體業界中，不斷降低最小特徵結構尺寸，如此一來可允許更多的裝置集積於一個特定的區域中，藉此持續改善各種電子零件(例如電晶體、二極體、電阻、電容等等)的集積密度。在某些應用中，與過去的封裝結構相比，這些尺寸較小的電子零件(例如積體電路晶粒)亦需要利用較少區域之較小的封裝。
本發明之實施例係揭示一種封裝結構，包括：一 晶粒具有一接墊位於一表面上；一封膠材料至少橫向地封裝晶粒，透過封膠材料暴露接墊；一第一介電層位於封膠材料及晶粒之上；一第一導電圖案位於第一介電層之上；一第二介電層位於第一導電圖案及第一介電層之上，第一介電層及第二介電層具有一第一開口到達晶粒的接墊；以及一第二導電圖案位於第二介電層之上及第一開口之中，第二導電圖案鄰接於位在第一開口中之第一介電層的一側壁以及位在第一開口中之第二介電層的一側壁。
本發明之另一實施例係揭示一種封裝結構，包括一封裝體，其包括：一晶粒，包括一接墊；一封膠材料圍繞晶粒；以及一介電多層結構位於晶粒及封膠材料之上，介電多層結構包括一第一導電圖案位於介電多層結構之中以及一第二導電圖案位於介電多層結構之上，定義一第一開口穿過介電多層結構到達接墊；第一導電圖案的至少一部分定義第一開口的至少一部分，第二導電圖案的至少一部分位於第一開口中並且鄰接於介電多層結構的側壁，第一導電圖案並未沿著位於第一開口中之介電多層結構的側壁延伸；以及一外部電性連接器位於封裝體之上。
本發明之又一實施例係揭示一種封裝結構之製造方法，包括：利用一封膠材料封裝一晶粒，透過封膠材料暴露晶粒的一接墊；在封膠材料及晶粒之上形成一第一介電層；在第一介電層之上形成一第一導電圖案；在第一導電圖案及第一介電層之上形成一第二介電層；在形成第一導電圖案及第二介電層之後，形成一開口穿過第二介電層及第一介電層到達接 墊；以及在第二介電層之上及開口之中形成一第二導電圖案。
為讓本發明之上述及其他目的、特徵、及優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：
20‧‧‧承載基板
22‧‧‧晶粒接合膜
24‧‧‧晶粒
26‧‧‧接墊
28‧‧‧鈍化保護層
30‧‧‧模塑成型化合物
32‧‧‧第一介電層
34‧‧‧第一導電層
35‧‧‧插圖
36‧‧‧介層窗連接部分
37‧‧‧走線
38‧‧‧寬度
40‧‧‧第二介電層
42、44‧‧‧開口
46‧‧‧第二導電層
48‧‧‧導電球
50‧‧‧支撐材料
60‧‧‧罩幕層
62、64‧‧‧開口
70‧‧‧第一晶種層
72‧‧‧第一主層
74‧‧‧第二晶種層
76‧‧‧第二主層
第1圖至第8圖繪示出依據本發明之一實施例之一結構在一第一製程期間的剖面示意圖；第9圖及第10圖繪示出依據本發明之一實施例之一結構在一第二製程期間的剖面示意圖；第11圖為一放大圖，繪示出依據本發明之一實施例之一介層窗。
下文將詳細討論例示性實施例的製造與使用。然而，應可理解的是，本發明之實施例提供許多適用於本發明的概念，能夠體現在特定的上下文中。本文中所討論的特定實施例僅用以說明各種例示性實施例的製造與使用，並非用以限制本發明或所附之權利請求的範圍。
下文將描述之實施例係有關於一種名為扇出(fan out)封裝結構的特定概念。然而，其他實施例也可以應用於其他封裝結構。所附圖式和下文的討論顯示經過簡化的結構，以避免混淆各種特徵結構，並省略重複的特徵結構，對本技術領域中具有通常知識者而言，此為顯而易見的。在圖式中相同的參考符號代表相同的部件。雖然方法實施例可依照本說明書所 述之特定的順序實施，但是其他實施例亦可依照任何合理的順序實施。
第1圖至第8圖繪示出依據本發明之一實施例之一結構在一第一製程期間的剖面示意圖。第1圖繪示兩個晶粒24，在製程期間，晶粒24具有一環繞於其周圍的模塑成型化合物(molding compound)30。晶粒24各自包括一接墊26，例如鋁接墊，以及一鈍化保護層28位於晶粒24的一頂部表面上。舉例而言，晶粒24可以是邏輯積體電路、記憶體晶粒、類比晶粒或任何其他晶粒。晶粒24可包括一半導體基板，例如一塊材半導體(bulk semiconductor)基板、絕緣層上覆矽(semiconductor-on-insulator)基板或其他類似之基板，且在此半導體基板之上依據半導體製程形成主動裝置，例如電晶體，及/或被動裝置，例如電容、電感或其他類似之裝置。金屬化層可位於半導體基板之上，並且可包括內連線結構以將裝置彼此電性耦接及/或將裝置電性耦接至接墊26。
在一實施例中，晶粒24為晶圓的一部分。在晶圓的每一個晶粒24之鈍化保護層28及接墊26之上形成一犧牲層，犧牲層可包括一乾膜或一濕膜，其中乾膜或濕膜係利用塗佈(coating)、層壓(laminating)、印刷(printing)或其他類似之製程所形成。可利用紫外光照射、烘箱製程(oven process)或其他類似之製程固化犧牲層。接著切割晶圓以形成各自獨立的晶粒24。舉例而言，可利用取放工具(pick-and-place tool)，將晶粒24放置於承載基板20之上，並且利用一晶粒接合膜22將晶粒24黏合至承載基板20，其中晶粒接合膜22可包括，例如任何合適 的黏合劑，例如紫外光膠(當其暴露於紫外光之中將失去其黏著性)或線路上覆膜(film on wire,FOW)材料。
形成一模塑成型化合物30以至少橫向地包圍晶粒24。可利用壓塑成型(compression molding)、層壓或其他類似之製程形成模塑成型化合物30。模塑成型化合物30可以是一環氧基(epoxy-based)複合物或其他類似之材料。舉例而言，可利用溫度範圍介於120℃至330℃之間的熱製程硬化模塑成型化合物30。可對模塑成型化合物30實施研磨製程，以暴露出位於晶粒24之上的犧牲層。可利用一溶劑、化學藥劑或其他類似之試劑移除犧牲層。在一實施例中，利用對犧牲層具有選擇性的一濕式蝕刻移除犧牲層，其中此濕式蝕刻係利用，例如，一稀氫氧化鉀溶液，例如，約3%至約5%之氫氧化鉀溶液。因此，可形成如第1圖所繪示之結構。
在第2圖中，在晶粒24的鈍化保護層28及接墊26之上以及模塑成型化合物30之上形成一第一介電層32。第一介電層32可包括聚苯噁唑(polybenzoxazole,PBO)、聚亞醯胺(polyimide)、苯環丁烯(benzocyclobutene,BCB)、其他類似之材料或上述材料之組合。可藉由旋轉塗佈製程、層壓(lamination)製程、其他類似之製程或上述製程之組合形成第一介電層32。
在第3圖中，在第一介電層32之上形成一第一導電層34。第一導電層34包括許多走線。插圖35為一平面圖，繪示出一走線37連接至一介層窗連接部分36，其中介層窗連接部分36係直接形成於一對應的接墊26之上。介層窗連接部分36具有 一開口，其中此開口具有一寬度38。圖中所繪示的介層窗連接部分36為一圓環形或類圓環形(ring-like)的形狀，而在其他實施例中，在介層窗連接部分36中的開口可為一矩形或類方形(square-like)、三角形、六角形、八角形或其他類似之形狀。同樣地，圖中所繪示的介層窗連接部分36為一封閉的形狀，而在其他實施例中，介層窗連接部分36可以是中斷的或不連續的。
在一實施例中，第一導電層34包括一金屬，例如銅、鈦、其他類似之金屬或上述金屬之組合，且可藉由一鍍覆製程(plating process)形成，例如、無電電鍍、電鍍或其他類似之製程。舉例而言，在第一介電層32之上沉積一晶種層。此晶種層可包括銅、鈦、銅及鈦之組合(Ti/Cu)、其他類似之金屬或上述金屬之組合，並且可藉由原子層沉積、濺鍍、另一物理氣相沉積製程或其他類似之製程沉積晶種層。藉由，例如，一合適的微影技術沉積並圖案化一光阻，以暴露出用以形成第一導電層34所需的圖案。藉由無電電鍍、電鍍或其他類似之製程在晶種層上沉積一導電材料，例如，銅、鋁、類似之材料、或上述材料之組合。利用，例如，一合適的光阻剝除製程移除上述光阻。利用，例如，一濕式蝕刻或乾式蝕刻移除剩餘的晶種層暴露部分。
在第4圖中，在第一介電層32及第一導電層34之上形成一第二介電層40。第二介電層40可包括聚苯噁唑(PBO)、聚亞醯胺、苯環丁烯(BCB)、其他類似之材料或上述材料之組合。可藉由旋轉塗佈製程、層壓製程、其他類似之製程或上述 製程之組合形成第一介電層32。
在第5圖中，利用一合適的微影技術(例如，包括將第二介電層40中欲形成開口42的部分暴露於光源中)，藉以形成開口42，其穿過第二介電層40到達第一介電層32及/或第一導電層34，例如，到達介層窗連接部分36。
在第6圖中，形成開口44，其穿過第一介電層32到達接墊26。在一實施例中，利用一蝕刻製程形成開口44。蝕刻製程可為非等向性(anisotropic)並且可包括反應式離子蝕刻(reactive ion etching,RIE)、電容耦合電漿(capacitive coupled plasma,CCP)蝕刻、感應耦合電漿(inductive coupled plasma,ICP)蝕刻、其他類似之製程或上述製程之組合。在其他實施例中，亦可使用其他合適的方法，例如雷射鑽孔。在移除第一介電層32以形成開口44的製程期間，第一導電層34，例如介層窗連接部分36可作為一罩幕。
在第7圖中，在第二介電層40之上及開口44之中形成一第二導電層46之上。第二導電層46包括許多走線及/或接合墊用以與導電球連接。在一實施例中，第二導電層4包括一金屬，例如銅、鈦、其他類似之金屬或上述金屬之組合，且可藉由一鍍覆製程形成，例如、無電電鍍、電鍍或其他類似之製程。舉例而言，在第二介電層40之上及開口44之中沉積一晶種層。此晶種層可包括銅、鈦、銅及鈦之組合(Ti/Cu)、其他類似之金屬或上述金屬之組合，並且可藉由原子層沉積、濺鍍、另一物理氣相沉積製程或其他類似之製程沉積晶種層。可藉由一合適的微影技術沉積並圖案化一光阻，以暴露出用以形成第二 導電層46所需的圖案。藉由無電電鍍、電鍍或其他類似之製程在晶種層上沉積一導電材料，例如，銅、鋁、類似之材料、或上述材料之組合。可利用一合適的光阻剝除製程移除上述光阻。可利用一濕式蝕刻或乾式蝕刻移除剩餘的晶種層暴露部分。在開口44之中形成介層窗以連接對應之接墊26、第一導電層34之介層窗連接部分36及第二導電層46的一部分。
在第8圖中，在第二導電層46的一接合墊之上形成一導電球48。導電球48可包括焊料，例如無鉛焊料，並且可利用一合適的球滴(ball drop)製程形成。一支撐材料(bracing material)50形成在第二導電層46及第二介電層40之上並且圍繞導電球48的一部分。支撐材料50可包括一模塑成型化合物或其他類似之材料，以提供結構支撐。
第9圖及第10圖繪示出依據本發明之一實施例之一結構在一第二製程期間的剖面示意圖。第二製程進行如上文所述自第1圖至第4圖的製程步驟。在第9圖中，在第二介電層40之上形成具有一開口62的一罩幕層60。罩幕層60可包括氮化矽、氮氧化矽、光敏感膜(一乾膜或一濕膜)、其他類似之材料或上述材料之組合，並且可利用化學氣相沉積、塗佈、層壓、其他類似之製程或上述製程之組合形成罩幕層60。可利用一合適的微影及蝕刻製程，例如，反應式離子蝕刻(RIE)、電容耦合電漿(CCP)蝕刻、感應耦合電漿(ICP)蝕刻、其他類似之製程或上述製程之組合形成開口62。在此實施例中，舉例而言，由於與形成繪示於第6圖中的開口44時相較，罩幕層60能夠避免第二介電層40在形成開口64時的厚度損失，因此在第二製程中 所形成的第二介電層40可具有一初始厚度小於在第一製程中所形成的第二介電層40之初始厚度。
在第10圖中，利用罩幕層60形成開口64，其穿過第二介電層40及第一介電層32到達接墊26。在一實施例中，利用一蝕刻製程形成開口64，其穿過第二介電層40及第一介電層32。蝕刻製程可為非等向性並且可包括反應式離子蝕刻(RIE)、電容耦合電漿(CCP)蝕刻、感應耦合電漿(ICP)蝕刻、其他類似之製程或上述製程之組合。在其他實施例中，亦可使用其他合適的方法，例如雷射鑽孔。在移除第一介電層32以形成開口64的製程期間，第一導電層34，例如介層窗連接部分36可作為一罩幕。在形成開口64之後，可利用，例如，對罩幕層60具有選擇性的蝕刻製程移除罩幕層60。接著，第二製程進行如上文所述自第7圖至第8圖的製程步驟。
在第一製程及第二製程中，可藉由將晶粒接合膜22暴露於一溶劑或紫外光之中，以移除承載基板20。因此，一封裝可包括如第8圖所示結構但不具有承載基板20及晶粒接合膜22。
第11圖為一放大圖，繪示出依據上述實施例所形成之一介層窗。如第11圖所繪示，第一導電層34包括一第一晶種層70及一第一主層(main layer)72，且第二導電層46包括一第二晶種層74及一第二主層76。包括介層窗連接部分36的第一導電層34沿著第一介電層32的頂部表面延伸，而並未沿著第一介電層32的側壁延伸。第二導電層46沿著第二介電層40的頂部表面延伸，且鄰接於第二介電層40、第一導電層34(例如，介層 窗連接部分36)及第一介電層32的側壁，並且鄰接於接墊26的頂部表面。支撐材料50可填充介層洞中任何未被填充的部分，例如，如第11圖所繪示。
上述實施例具有許多優點。舉例而言，由於介層窗只有一導電層沿著一開口的側壁所形成，因此可降低此介層洞的深寬比。藉此可降低此介層洞的開口尺寸。因此位於晶粒上的接墊可以更小。此外，利用某些實施例可降低成本。
本發明之一實施例為一種封裝結構，其包括一晶粒具有一接墊位於一表面上，以及一封膠材料至少橫向地封裝晶粒。透過封膠材料暴露接墊。上述封裝結構更包括一第一介電層位於封膠材料及晶粒之上，一第一導電圖案位於第一介電層之上，以及一第二介電層位於第一導電圖案及第一介電層之上。第一介電層及第二介電層具有一第一開口到達晶粒的接墊。上述封裝結構更包括一第二導電圖案位於第二介電層之上及第一開口之中。第二導電圖案鄰接於位在第一開口中之第一介電層的一側壁以及位在第一開口中之第二介電層的一側壁。
本發明之另一實施例為一種封裝結構，其包括一封裝體以及一外部電性連接器位於封裝之上。其中此封裝體包括一晶粒，其包括一接墊，一封膠材料圍繞晶粒，以及一介電多層結構位於晶粒及封膠材料之上。介電多層結構包括一第一導電圖案位於介電多層結構之中以及一第二導電圖案位於介電多層結構之上。定義一第一開口穿過介電多層結構到達接墊。第一導電圖案的至少一部分定義第一開口的至少一部分。第二導電圖案的至少一部分位於第一開口中並且鄰接於介電 多層結構的側壁。第一導電圖案並未沿著位於第一開口中之介電多層結構的側壁延伸。
本發明之又一實施例為一種封裝結構之製造方法，包括利用一封膠材料封裝一晶粒，透過此封膠材料暴露晶粒的一接墊；在封膠材料及晶粒之上形成一第一介電層；在第一介電層之上形成一第一導電圖案；在第一導電圖案及第一介電層之上形成一第二介電層；在形成第一導電圖案及第二介電層之後，形成一開口穿過第二介電層及第一介電層到達接墊；以及在第二介電層之上及開口之中形成一第二導電圖案。
雖然本發明已以數個較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神及範圍內，當可作任意之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。此外，本發明的申請範圍並不限於說明書中所描述之特定實施例中的製程、機器、製造、物質組合物、手段、方法及步驟。任何所屬技術領域中具有通常知識者在理解本發明所揭露之既有的或即將發展的內容、製程、機器、製造、物質組合物、手段、方法或步驟之後，依據相關實施例及替代實施例，可能會得到等效的變更及/或修改，以執行與本說明書所描述之相應實施例基本上相同的功能或產生基本上相同的結果。因此，本發明的申請範圍包括在製程、機器、製造、物質組合物、手段、方法或步驟中所有因此產生的修改及變更，並未受到限制。
20‧‧‧承載基板
22‧‧‧晶粒接合膜
24‧‧‧晶粒
26‧‧‧接墊
28‧‧‧鈍化保護層
30‧‧‧模塑成型化合物
32‧‧‧第一介電層
34‧‧‧第一導電層
40‧‧‧第二介電層
46‧‧‧第二導電層
48‧‧‧導電球
50‧‧‧支撐材料

Claims (10)

  1. 一種封裝結構，包括：一晶粒具有一接墊位於一表面上；一封膠材料至少橫向地封裝該晶粒，透過該封膠材料暴露該接墊；一第一介電層位於該封膠材料及該晶粒之上；一第一導電圖案位於該第一介電層之上；一第二介電層位於該第一導電圖案及該第一介電層之上，該第一介電層及該第二介電層具有一第一開口到達該晶粒的該接墊；以及一第二導電圖案位於該第二介電層之上及該第一開口之中，該第二導電圖案鄰接於位在該第一開口中之該第一介電層的一側壁以及位在該第一開口中之該第二介電層的一側壁。
  2. 如申請專利範圍第1項所述之封裝結構，其中該第一導電圖案包括一連接部分，該連接部分具有一第二開口，該第二開口定義位在第一介電層中之該第一開口，該連接部分的一側壁鄰接於位在該第一開口中之該第二導電圖案，且其中該連接部分包括一圓環形、一矩形、一三角形、一六角形、一八角形或上述形狀之組合。
  3. 如申請專利範圍第2項所述之封裝結構，其中該連接部分具有封閉該第二開口的一連續部分。
  4. 如申請專利範圍第2項所述之封裝結構，其中該連接部分具有圍繞該第二開口的一不連續部分。
  5. 如申請專利範圍第1項所述之封裝結構，更包括：一外部電性連接器位於該第二導電圖案之上；以及一支撐材料位於該第二介電材料層及該二導電圖案之上，並且圍繞該外部電性連接器的至少一部分。
  6. 一種封裝結構，包括：一封裝體，包括：一晶粒，包括一接墊；一封膠材料圍繞該晶粒；一介電多層結構位於該晶粒及該封膠材料之上，該介電多層結構包括一第一導電圖案位於該介電多層結構之中以及一第二導電圖案位於該介電多層結構之上，定義一第一開口穿過該介電多層結構到達該接墊；該第一導電圖案的至少一部分定義該第一開口的至少一部分，該第二導電圖案的至少一部分位於該第一開口中並且鄰接於該介電多層結構的側壁，該第一導電圖案並未沿著位於該第一開口中之該介電多層結構的側壁延伸；以及一外部電性連接器位於該封裝體之上。
  7. 如申請專利範圍第6項所述之封裝結構，其中該第一導電圖案包括一連接部分，該連接部分具有一第二開口，該第二開口定義該第一開口的至少該部分，該連接部分的一側壁鄰接於位在該第一開口中之該第二導電圖案，其中該連接部分包括一圓環形且具有封閉該第二開口的一連續部分。
  8. 一種封裝結構之製造方法，包括： 利用一封膠材料封裝一晶粒，透過該封膠材料暴露該晶粒的一接墊；在該封膠材料及該晶粒之上形成一第一介電層；在該第一介電層之上形成一第一導電圖案；在該第一導電圖案及該第一介電層之上形成一第二介電層；在形成該第一導電圖案及該第二介電層之後，形成一開口穿過該第二介電層及該第一介電層到達該接墊；以及在該第二介電層之上及該開口之中形成一第二導電圖案。
  9. 如申請專利範圍第8項所述之封裝結構之製造方法，其中該第一導電圖案包括一連接部分，且該連接部分包括一圓環形，在形成該開口穿過該第一介電層時，使用該連接部分作為一罩幕。
  10. 如申請專利範圍第8項所述之封裝結構之製造方法，其中該第二導電圖案在該開口中鄰接於該第一介電層及該第二介電層之側壁。
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