TW201511150A - 超聲波焊接用鍍覆銅線之結構 - Google Patents
超聲波焊接用鍍覆銅線之結構 Download PDFInfo
- Publication number
- TW201511150A TW201511150A TW103119855A TW103119855A TW201511150A TW 201511150 A TW201511150 A TW 201511150A TW 103119855 A TW103119855 A TW 103119855A TW 103119855 A TW103119855 A TW 103119855A TW 201511150 A TW201511150 A TW 201511150A
- Authority
- TW
- Taiwan
- Prior art keywords
- core material
- plating
- wire
- copper
- plated
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
- H01L2224/85207—Thermosonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013124903A JP5546670B1 (ja) | 2013-06-13 | 2013-06-13 | 超音波接合用コーティング銅ワイヤの構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201511150A true TW201511150A (zh) | 2015-03-16 |
TWI563580B TWI563580B (ja) | 2016-12-21 |
Family
ID=51409577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103119855A TW201511150A (zh) | 2013-06-13 | 2014-06-09 | 超聲波焊接用鍍覆銅線之結構 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5546670B1 (ja) |
CN (1) | CN104241237B (ja) |
SG (1) | SG10201403091UA (ja) |
TW (1) | TW201511150A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI652693B (zh) | 2015-05-26 | 2019-03-01 | 日鐵住金新材料股份有限公司 | 半導體裝置用接合導線 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SG11201608819VA (en) | 2014-04-21 | 2016-12-29 | Nippon Steel & Sumikin Mat Co | Bonding wire for semiconductor device |
WO2016189758A1 (ja) * | 2015-05-26 | 2016-12-01 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
CN106489199B (zh) | 2015-06-15 | 2019-09-03 | 日铁新材料股份有限公司 | 半导体装置用接合线 |
DE112015005172B4 (de) | 2015-07-23 | 2022-01-05 | Nippon Micrometal Corporation | Bonddraht für Halbleitervorrichtung |
US9887172B2 (en) * | 2015-08-12 | 2018-02-06 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
JP6410692B2 (ja) * | 2015-08-28 | 2018-10-24 | 田中電子工業株式会社 | 銅合金ボンディングワイヤ |
WO2017221434A1 (ja) * | 2016-06-20 | 2017-12-28 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0750720B2 (ja) * | 1989-11-08 | 1995-05-31 | 株式会社東芝 | ボンディングワイヤ及びこれを有する半導体装置 |
JP3210445B2 (ja) * | 1992-11-10 | 2001-09-17 | 田中電子工業株式会社 | 半導体素子のボンディング用ワイヤの製造方法 |
JPH06283565A (ja) * | 1993-03-29 | 1994-10-07 | Nippon Steel Corp | 高周波用ボンディングワイヤー |
JPH09246310A (ja) * | 1996-03-04 | 1997-09-19 | Hitachi Ltd | 半導体装置 |
KR100280084B1 (ko) * | 1998-12-29 | 2001-03-02 | 마이클 디. 오브라이언 | 반도체 장치용 와이어 |
TW200414453A (en) * | 2002-03-26 | 2004-08-01 | Sumitomo Electric Wintec Inc | Bonding wire and IC device using the bonding wire |
JP2005129603A (ja) * | 2003-10-22 | 2005-05-19 | Mitsumi Electric Co Ltd | 半導体集積回路装置 |
MY147804A (en) * | 2007-07-24 | 2013-01-21 | Nippon Steel & Sumikin Mat Co | Bonding wire for semiconductor device |
JP2009088132A (ja) * | 2007-09-28 | 2009-04-23 | Tanaka Electronics Ind Co Ltd | ボンディングワイヤ |
JP5381816B2 (ja) * | 2010-03-03 | 2014-01-08 | 三菱電機株式会社 | ワイヤボンディング方法 |
JP2013033811A (ja) * | 2011-08-01 | 2013-02-14 | Tatsuta Electric Wire & Cable Co Ltd | ボールボンディングワイヤ |
-
2013
- 2013-06-13 JP JP2013124903A patent/JP5546670B1/ja not_active Expired - Fee Related
-
2014
- 2014-06-09 TW TW103119855A patent/TW201511150A/zh not_active IP Right Cessation
- 2014-06-10 SG SG10201403091UA patent/SG10201403091UA/en unknown
- 2014-06-13 CN CN201410265987.XA patent/CN104241237B/zh not_active Expired - Fee Related
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI652693B (zh) | 2015-05-26 | 2019-03-01 | 日鐵住金新材料股份有限公司 | 半導體裝置用接合導線 |
US10236272B2 (en) | 2015-05-26 | 2019-03-19 | Nippon Micrometal Corporation | Cu alloy core bonding wire with Pd coating for semiconductor device |
US10497663B2 (en) | 2015-05-26 | 2019-12-03 | Nippon Micrometal Corporation | Cu alloy core bonding wire with Pd coating for semiconductor device |
US10672733B2 (en) | 2015-05-26 | 2020-06-02 | Nippon Micrometal Corporation | Cu alloy core bonding wire with Pd coating for semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
CN104241237B (zh) | 2017-04-12 |
JP2015002213A (ja) | 2015-01-05 |
JP5546670B1 (ja) | 2014-07-09 |
SG10201403091UA (en) | 2015-01-29 |
CN104241237A (zh) | 2014-12-24 |
TWI563580B (ja) | 2016-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201511150A (zh) | 超聲波焊接用鍍覆銅線之結構 | |
JP5088981B1 (ja) | Pd被覆銅ボールボンディングワイヤ | |
TWI508204B (zh) | High-speed signal line with bonding wire | |
JP4349641B1 (ja) | ボールボンディング用被覆銅ワイヤ | |
JP5343069B2 (ja) | ボンディングワイヤの接合構造 | |
KR20120031005A (ko) | 반도체용 구리 합금 본딩 와이어 | |
KR101536554B1 (ko) | 본딩용 와이어 | |
JP5165810B1 (ja) | 銀金パラジウム系合金バンプワイヤ | |
JP6002300B1 (ja) | ボールボンディング用パラジウム(Pd)被覆銅ワイヤ | |
US9236166B2 (en) | Core-jacket bonding wire | |
WO2013018238A1 (ja) | ボールボンディングワイヤ | |
Manoharan et al. | Advancements in silver wire bonding | |
TWI521070B (zh) | 球焊用貴金屬薄銀合金絲 | |
JP5682935B2 (ja) | 超音波接合用純銅合金ワイヤの断面構造 | |
CN105321917A (zh) | 表面改质银钯合金线的结构 | |
KR20200039714A (ko) | 반도체 장치용 Cu 합금 본딩 와이어 | |
TW201710565A (zh) | 多鍍層銀線及其製法 | |
TWI509089B (zh) | Sectional Structure of Pure Copper Alloy Wire for Ultrasonic Jointing | |
TWI510652B (zh) | Construction of thin copper alloy wire for copper alloy for joining semiconductor device | |
EP3557609A1 (en) | Method of manufacturing an aluminium coated copper ribbon and a device using the same | |
JP2014232762A (ja) | ボンディングワイヤ、ボールボンディング方法および半導体装置 | |
US20110236697A1 (en) | Aluminum for ultrasonic bonding | |
JP6369994B2 (ja) | ボールボンディング用銅合金細線 | |
Jung et al. | Effects of Pd distribution at free air ball in Pd coated Cu wire | |
JP2019186246A (ja) | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |