TW201448184A - 影像感測器裝置及其製造方法 - Google Patents
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Abstract
本發明之實施形態之影像感測器裝置具有:感測器陣列,將由光二極體及MOS電晶體所構成之背面照射型的像素矩陣配置於半導體基板上而形成;半導體薄膜,於感測器陣列上透過層間絕緣膜而形成;及複數個類比數位轉換電路,由形成於半導體薄膜上之薄膜電晶體所構成;類比數位轉換電路是設置成:對應於藉由感測器陣列之像素一一分割為特定個數所形成之各區塊,互相對應之區塊與類比數位轉換電路是以貫通層間絕緣膜內的層間通孔而電性地連接。
Description
本發明之實施形態有關於一種影像感測器裝置及其製造方法,該影像感測器裝置是積層CMOS感測器與AD轉換器。
近年來,提出了一種技術為:互補式金氧半導體(CMOS)感測器(CIS)之像素部分與類比數位轉換器(Analog-Digital Converter,ADC)部分是製作為個別的晶片,該些晶片進行積層,已積層之晶片互相連接。例如,CIS之像素區域分割成16點×16點等小的區塊。包含複數個ADC單元之晶片與CIS是製作為個別的晶片,以使對應於各區塊之ADC(ADC單元)2次元地配置。然後,各ADC藉由微小的金屬接合連接於CIS之各區塊。藉由該技術,相較於習知行並列方式,1個ADC須負責控制之像素個數減少,因此,可使框率高速化。更進一步,於習知行並列方式中,因被置於像素之橫向的ADC與像素區域重疊,故可將包含CIS之元件的整體晶片面積加以縮小。
又,亦有一例報告為:CIS之像素部分與包含ADC之周邊邏輯電路為互相分離之個別晶片,該些晶片上
下貼合,晶片間以矽穿孔(TSV)而上下電性地連接,藉此,CIS與周邊邏輯電路一體化。藉由該技術,因於像素部分與邏輯部分可分別使用最適化之處理與電路構成,故可使處理性能提升。
[非專利文獻1]M. Motoyoshi and M. Koyanagi, Journal of Instrumentation 4 P03009.
[非專利文獻2]S. Sukegawa et al., ISSCC 2013, pp. 484-485.
然而,將CIS之像素部分與周邊邏輯電路個別製作之晶片電性地連接極為困難。將ADC晶片與CIS晶片電性地連接非微凸塊不可,但微凸塊的間隔在5μm以上。因此,連接間隔的細微化困難,且在日後更加高像素化之小型CIS的對應上具有界限。又,亦具有用以貼合分別製作之晶片的成本(薄膜化、切割、定位、貼合)高的問題。更進一步,周邊邏輯電路晶片以TSV貼合於CIS晶片時,因TSV的間隔在10μm以上,亦具有同樣的問題。
發明欲解決之課題為提供一種影像感測器裝置及其製造方法,其不須以個別晶片構成CIS之像素部分與ADC之電路部分,且不須進行晶片間的貼合,即可積層CIS之像素部分與ADC,可達到CIS之晶片面積的縮小化及
處理性能的提升。又,發明欲解決之課題為將像素部分與ADC之連接間隔縮小至微凸塊的界限以下,例如,亦可對應於具有像素間隔為1μm左右之細微像素的CIS。同時,發明欲解決之課題為提供一種影像感測器裝置及其製造方法,其可達成製造成本的減少。
本發明之影像感測器裝置是具有:感測器陣列,於半導體基板上矩陣狀地配置有複數個分別包含光二極體及金屬氧化物半導體(MOS)電晶體之背面照射型的像素;半導體薄膜,於前述感測器陣列上透過層間絕緣膜而形成;及複數個類比數位轉換電路,包含形成於前述半導體薄膜上之薄膜電晶體;前述類比數位轉換電路是設置成:對應於藉由前述感測器陣列之前述像素一一分割為特定個數所形成之各區塊,互相對應之區塊與類比數位轉換電路是以貫通前述層間絕緣膜內的層間通孔而電性地連接。
根據本發明,可將類比/數位轉換電路以CMOS處理一起形成在:於感應器陣列上透過層間絕緣膜而形成之半導體薄膜。藉此,本發明不須以個別晶片構成CIS之像素部分與ADC部分,且不須進行晶片的貼合,即可積層感應器陣列與ADC。又,根據本發明,配線間隔不須受限於微凸塊之間隔的界限,可加以高密度化。因此,本發明可達到晶片面積的縮小化及提升處理性能,且可達成製造成本的減少。
11、31‧‧‧矽基板
12‧‧‧光二極體
13‧‧‧MOS電晶體
14‧‧‧像素(光檢出單元)
15‧‧‧區塊
16、18、26、36、38‧‧‧層間絕緣膜
17、37‧‧‧配線
21‧‧‧不定形矽鍺錫膜
22‧‧‧多矽鍺錫膜(活性區域)、多結晶矽鍺錫膜(半導體薄膜)
23、33‧‧‧薄膜電晶體(MOS電晶體)
25‧‧‧ADC單元
27‧‧‧金屬配線
29‧‧‧層間通孔
100‧‧‧像素陣列
131、231‧‧‧閘極絕緣膜
132、232‧‧‧閘極電極
133、233‧‧‧源極/汲極區域
140‧‧‧過濾器
150‧‧‧微透鏡
160、250、350‧‧‧微凸塊
200‧‧‧ADC陣列
300‧‧‧圖像處理LSI晶片
400‧‧‧CIS晶片
圖1是顯示第1實施形態之影像感測器裝置的基本構成的示意圖。
圖2是顯示第1實施形態之影像感測器裝置的元件構成的剖面圖。
圖3是顯示相當1個ADC之像素個數與界限框率的關係的特性圖。
圖4(a)-(c)是顯示第1實施形態之影像感測器裝置的製造工程的剖面圖。
圖5(d)-(f)是顯示第1實施形態之影像感測器裝置的製造工程的剖面圖。
圖6是顯示第2實施形態之影像感測器裝置的元件構成的剖面圖。
圖7是顯示第3實施形態之影像感測器裝置的元件構成的剖面圖。
以下,參照圖示,說明實施形態之影像感測器裝置。
圖1是顯示第1實施形態之影像感測器裝置的基本構成的示意圖。
圖1中的100是背面照射型CIS的像素陣列100。該陣列100是藉由矩陣狀地配置有:由光二極體及MOS電晶
體所形成之背面照射型的像素14而形成。像素14以M×N個形成1個區塊15,於陣列100配置有n×m個區塊15。
為使ADC陣列200與像素陣列100之表面側(於圖1為下側,光從上側入射)相對向,ADC陣列200配置於像素陣列100上。為使ADC單元25分別與像素陣列100之各區塊15相對應,於ADC陣列200配置有複數個ADC單元25。各ADC單元25之輸入端藉由層間通孔29連接於與各單元25相對應之區塊15的輸出端。
又,於圖1之示意圖中,顯示像素陣列100與ADC陣列200分離,但實際上像素陣列100與ADC陣列200接近,透過未圖示之層間絕緣膜,ADC陣列200積層於像素陣列100上。而層間通孔29是貫通層間絕緣膜而設置。
圖2是顯示本實施形態之元件構成的剖面圖。
於矽基板11上,多數地配置有:由光二極體12及MOS電晶體13所構成之背面照射型的光檢出單元14。於光檢出單元之上部上,積層有層間絕緣膜16及配線17,形成像素陣列100。MOS電晶體13是藉由:於矽基板11上透過閘極絕緣膜131設有閘極電極132,於該閘極電極132兩側的矽基板11內設有源極/汲極區域133而形成。於圖2中,顯示於1個像素只有1個MOS電晶體13,但實際上於1個像素(單元)形成有讀取電晶體、選擇電晶體、增幅電晶體及重置電晶體等,藉此,構成CIS之像素部分。因該具體電路構成對於相關領域者已為公知,故在此省略CIS之像素部分的詳細說明。
於像素陣列100上透過層間絕緣膜18形成有多結晶矽鍺錫膜(半導體薄膜)22。相對於該半導體薄膜22,形成包含閘極絕緣膜231、閘極電極232及源極/汲極區域233的薄膜電晶體(MOS電晶體)23。然後,複數個MOS電晶體23之源極/汲極區域233及閘極電極232是透過層間絕緣膜26以金屬配線27而結合。藉此,形成ADC單元(ADC電路)25,並藉由該些複數個ADC單元25並列地配列,構成ADC陣列200。像素陣列100例如為8×8的各像素區塊,各像素區塊以通孔配線29電性地連接於一個ADC單元25。
在此,為了獲得良好的斷電特性,矽鍺錫電晶體23之活性層的厚度,即矽鍺錫半導體薄膜22之厚度宜為閘極長度的1/4以下。具體而言,以矽鍺錫半導體薄膜之厚度而言,宜為10nm~50nm的厚度。又,為了降低斷電電流至與一般矽-CMOS同等階,藉由確保與矽同等的帶隙,矽鍺錫半導體薄膜22之矽組成宜為20%以上。為了不傷像素陣列100之金屬配線,實現足夠低(400℃以下)的處理溫度,矽鍺錫半導體薄膜22之錫組成宜為高。另一方面,若矽鍺錫半導體薄膜22之錫組成太高,進行結晶化時,會作為金屬錫於結晶中偏析。因此,錫組成宜為0.5%以上2%以下。然而,即使斷電電流高,亦無設計上的問題時,可使用移動度佳的鍺。
又,本實施形態是一個ADC單元25負責控制之像素個數少,以使平均每1框率之處理時間縮短,,即,可使影像感應器裝置的框率提升。該計算結果表示於圖
3。習知行並列型ADC是30fps的性能,而根據本實施形態,可獲得16×16的像素區塊為1000fps,4×4的像素區塊為超過10000fps的性能。
接著,參照圖4及圖5,說明本實施形態之影像感測器裝置的製造方法。
首先,如圖4(a)所示,為使包含光二極體12及MOS電晶體13之像素14配列為矩陣狀,像素14藉由習知方法形成於矽基板11上。接著,於像素14上形成有層間絕緣膜16及配線17。藉此,形成像素陣列100。
接著,如圖4(b)所示,於像素陣列100上形成層間絕緣膜18後,於該層間絕緣膜18上堆積不定形矽鍺錫膜21。在此,不定形矽鍺錫膜21是藉由濺鍍法、真空蒸鍍法或化學氣相沉積(CVD)法等來堆積。又,亦可以CVD法等直接形成多結晶矽鍺錫膜。
接著,如圖4(c)所示,針對不定形矽鍺錫膜之台面分離(mesa isolation)的元件分離工程後,藉由250℃至400℃的溫度範圍,氮氣氣體中的退火,形成多矽鍺錫膜(活性區域)22。又,於前一步驟形成多結晶半導體膜時,不須進行退火。接著,經過閘極堆疊形成、閘極加工、源極/汲極形成等步驟,薄膜電晶體23形成於矽鍺錫膜22上。
接著,如圖5(d)所示,藉由於薄膜電晶體23上形成層間絕緣膜26及配線27,形成具有對應於區塊之複數個ADC單元25的ADC陣列200。更進一步,像素陣列100側
之配線17與ADC陣列200側之配線27是藉由層間通孔29而連接。
接著,如圖5(e)所示,研磨矽基板11之背面,矽基板11進行薄膜化。
最後,如圖5(f)所示,藉由於矽基板11之背面側形成紅、綠、藍色過濾器140及微透鏡150,完成影像感測器裝置。
如此般地,根據本實施形態,可不須使用微凸塊等,於背面照射型之像素陣列100上透過層間絕緣膜18,形成由矽鍺錫電晶體所構成之ADC陣列200。然後,本實施形態之構成是藉由一般所使用之CMOS製造步驟而一起形成。N×M點的各像素區塊透過層間通孔29電性地連接一個ADC單元25。更進一步,藉由於ADC單元25之電晶體使用矽鍺錫通道,在不帶給底層之像素晶片內的金屬配線等熱損傷的低溫(400℃以下)條件下,可進行電晶體形成處理。
又,因本實施形態之像素區塊15與ADC單元25之電性連接,是以一般的CMOS配線處理來形成,故相較於藉由TSV或微凸塊連接複數個晶片之習知技術,本實施形態精密度良好,且可進行高密度的連接。因此,本實施形態亦可對應:以TSV或微凸塊對應困難之狹小像素晶片的小型CIS。更進一步,本實施形態不須用以貼合晶片的切割、定位及貼合等成本,可實現低成本。
因此,本實施形態極有效地實現:日後更加高像
素化之小型CMOS影像感測器裝置、數位相機、監視相機、醫療用相機、感測網路等。
圖6是顯示第2實施形態之影像感測器裝置的元件構成的剖面圖。又,與圖2同一部分是賦予相同符號,省略其詳細說明。
本實施形態是第1實施形態的應用例,與先前已說明之第1實施形態相異之處為:包含如第1實施形態之像素陣列100與ADC陣列200之CIS晶片400,是搭載於圖像處理LSI晶片300上。即,於本實施形態中,除了CIS晶片400,另外還準備了以先端CMOS處理器製作之圖像處理LSI晶片300。圖像處理LSI晶片300是藉由:於矽基板31上形成有MOS電晶體33,於矽基板31及MOS電晶體33上形成有層間絕緣膜36及配線37而形成。然後,於圖像處理LSI晶片300之最上面形成有微凸塊350。
另一方面,於CIS晶片400之最上面形成有微凸塊250。該CIS晶片搭載於LSI晶片300上,微凸塊250接合於微凸塊350,CIS晶片400與LSI晶片300進而一體化。藉此,形成本實施形態之附圖像處理電路之影像感測器裝置。
如此般,根據本實施形態,於像素陣列100上透過層間絕緣膜18積層ADC陣列200,並藉由層間通孔29連接該些晶片,因此,可獲得與先前第1實施形態相同的效果,且可獲得如以下的效果。也就是說,像素陣列100與
ADC陣列200之積層體,即CIS晶片400,是搭載於圖像處理LSI晶片300上,藉由微凸塊250、350連接該些晶片100、200、300。因此,本實施形態可藉由像素陣列100檢出,藉由ADC陣列200將已進行類比數位轉換之訊號透過微凸塊250、350傳送至圖像處理LSI晶片300。
因此,本實施形態可將圖像處理、ADC、影像感測器陣列之3個功能一體化為一個晶片,可達成附圖像處理電路之影像感測器裝置的更加小型化。又,因本實施形態能以微凸塊將來自ADC的訊號並列地傳送至圖像處理晶片,故亦可將圖像處理並列化,提升影像感測器裝置的處理速度。即,本實施形態可將從來自PD(光二極體)之訊號的讀取至圖像處理一起進行並列化,藉此,大幅地提升圖像輸入‧圖像處理系統整體的性能。
圖7是顯示第3實施形態之影像感測器裝置的元件構成的剖面圖。又,與圖2同一部分是賦予相同符號,省略其詳細說明。
本實施形態與先前已說明之第2實施形態相異之處為:ADC陣列200不在像素陣列100側,而是層積於圖像處理LSI晶片300側。
ADC陣列200透過層間絕緣膜38形成於圖像處理LSI晶片300上,ADC陣列200是藉由層間通孔29連接於圖像處理LSI晶片300。更進一步,各ADC單元25之輸入端子是連接於ADC晶片之最表面所設置的微凸塊250。像素陣
列100連接於例如8×8像素的各區塊,其配線之一部分連接於微凸塊160。然後,像素陣列100之微凸塊160與ADC積層圖像處理LSI晶片300之微凸塊250互相地連接,像素陣列100與ADC積層圖像處理LSI晶片300進而一體化。
根據本實施形態,因像素區塊之大小因像素區塊與微凸塊之大小的配合精密度的界限而受限,故無法如第1實施形態之ADC那樣的高密度化,但與圖6之構造相同地,本實施形態可將圖像處理、ADC、影像感測器陣列之3個功態能一體化為一個晶片。又,因本實施形態可藉由層間通孔將來自ADC的訊號並列地傳送至圖像處理晶片,故亦可將圖像處理並列化,提升影像感測器裝置的處理速度。即,本實施形態可將從來自PD(光二極體)之訊號的讀取至圖像處理一起進行並列化,藉此,大幅地提升圖像輸入及圖像處理系統整體的性能。
又,本發明非限定於上述各實施形態。
於實施例中,是使用矽鍺錫作為用以形成ADC陣列之半導體薄膜,但不一定限定於此。於本實施形態中,只要用以形成ADC陣列之半導體薄膜可形成為相較於矽低溫且優質的結晶層,亦可使用其他的材料。例如,形成ADC陣列之半導體薄膜亦可是鍺單結晶或多結晶,或者是添加矽及錫至少之一的鍺單結晶或多結晶。
使不定形矽鍺錫或不定形鍺膜多結晶化(或單結晶化)之熱處理,非限定於400℃以下之氮氣氣體氣氛中的
退火處理,亦可是於其他氣體氣氛中,例如氫氣、氦氣、氧氣任一,或包含該些的混合氣體的氣體氣氛中的熱處理。又,亦可藉由雷射退火等,不定形層之一部分瞬間熔融之程度的強度的光照射,使不定形矽鍺錫或不定形鍺膜結晶化。此時,宜選擇不帶給底層之像素熱損傷的脈衝幅度或光強度。
光檢出元件(像素)之構成無任何限定,因為是於基板之表面側積層ADC陣列,所以只要包含光檢出元件之光檢出感測器(像素陣列)為背面照射型即可。又,構成光檢出元件之CMOS電路的構成可對應影像感測器裝置的規格而適當變更。更進一步,構成區塊之像素個數不限定任何於實施形態中所說明之個數,可對應影像感測器裝置的規格而適當變更。
又,ADC亦可為於ADC搭載其他附加功能,例如整體快門的類比數位記憶體(MISCAP,MIMCAP)及其開關電晶體。
雖已說明本發明之幾個實施形態,但該些實施形態提示為例,非意圖限定發明之範圍。該些實施形態能以其他各式各樣的形態來實施,在未脫離發明要旨之範圍內,可進行各種的省略、置換、變更。該些實施形態或其變形與包含於發明之範圍或要旨相同,為包含於專利請求範圍所記載之發明與其均等之範圍。
11‧‧‧矽基板
12‧‧‧光二極體
13‧‧‧MOS電晶體
14‧‧‧像素(光檢出單元)
16、18、26‧‧‧層間絕緣膜
17‧‧‧配線
22‧‧‧多結晶矽鍺錫膜(半導體薄膜)
23‧‧‧薄膜電晶體(MOS電晶體)
25‧‧‧ADC單元
27‧‧‧金屬配線
29‧‧‧層間通孔
100‧‧‧像素陣列
131、231‧‧‧閘極絕緣膜
132、232‧‧‧閘極電極
133、233‧‧‧源極/汲極區域
140‧‧‧過濾器
150‧‧‧微透鏡
200‧‧‧ADC陣列
Claims (11)
- 一種影像感測器裝置,該影像感測器裝置是具有:感測器陣列,於半導體基板上矩陣狀地配置有複數個分別包含光二極體及金屬氧化物半導體(MOS)電晶體之背面照射型的像素;半導體薄膜,於前述感測器陣列上透過層間絕緣膜而形成;及複數個類比數位轉換電路,包含形成於前述半導體薄膜上之薄膜電晶體;前述類比數位轉換電路是設置成:對應於藉由前述感測器陣列之前述像素一一分割為特定個數所形成之各區塊,互相對應之區塊與類比數位轉換電路是以貫通前述層間絕緣膜內的層間通孔(via)而電性地連接。
- 如請求項1之影像感測器裝置,其中前述感測器陣列藉由m×M列及n×N行(m、n、M、N為整數)之像素而形成,有M×N個的各區塊,前述各區塊是電性地連接於前述類比數位轉換電路。
- 如請求項1之影像感測器裝置,其中前述半導體基板是矽,前述半導體薄膜是包含鍺、矽、錫至少之一的單結晶或多結晶。
- 如請求項3之影像感測器裝置,其中前述半導體薄膜是矽鍺錫混晶半導體,前述混晶半導體之矽組成是20%以上,錫組成是2%以下。
- 如請求項3之影像感測器裝置,其中前述半導體薄膜是鍺。
- 一種附圖像處理電路之影像感測器裝置,該附圖像處理電路之影像感測器裝置是具有:請求項1、4及5任一項之影像感測器裝置;及圖像處理積體電路晶片,集積有用以進行圖像處理之電路,且於表面設有微凸塊;前述影像感測器裝置是,前述類比數位轉換電路側搭載於前述圖像處理積體電路晶片上,前述類比數位轉換電路連接於前述微凸塊。
- 一種附圖像處理電路之影像感測器裝置,該附圖像處理電路之影像感測器裝置是具有:感測器陣列,於第1半導體基板上矩陣狀地配置複數個分別包含光二極體及金屬氧化物半導體電晶體之背面照射型的像素;第1凸塊,設置於前述感測器陣列上,且連接於:藉由前述感測器陣列之前述像素一一分割為特定個數所形成之各區塊的輸出端;圖像處理積體電路晶片,於第2半導體基板上形成有用以進行圖像處理之圖像處理電路;半導體薄膜,於前述圖像處理積體電路晶片上透過層間絕緣膜而形成;複數個類比數位轉換電路,包含形成於前述半導體薄膜上之薄膜電晶體,設置成:對應於前述感測器陣列 之各區塊,且透過貫通前述層間絕緣膜內的層間通孔(via)連接於前述圖像處理電路;以及第2凸塊,連接於前述複數類比數位轉換電路之各輸入端;前述第1凸塊連接於前述第2凸塊,前述感測器陣列、前述圖像處理積體電路晶片及複數個類比數位轉換電路為一體化。
- 如請求項7之影像感測器裝置,其中前述半導體薄膜是矽鍺錫混晶半導體,前述混晶半導體之矽組成是20%以上,錫組成是2%以下。
- 如請求項7之影像感測器裝置,其中前述半導體薄膜是鍺。
- 一種影像感測器裝置之製造方法,該影像感測器裝置之製造方法包含以下之步驟:形成感測器陣列之步驟,該感測器陣列是於半導體基板上矩陣狀地配置有分別包含光二極體及金屬氧化物半導體電晶體之複數個像素者;形成半導體薄膜之步驟,該半導體薄膜是於前述感測器陣列上透過層間絕緣膜而形成;形成複數個類比數位轉換電路之步驟,前述複數個類比數位轉換電路包含於前述半導體薄膜上將前述半導體薄膜作為通道區域之薄膜電晶體,且分別對應於藉由前述感測器陣列之前述像素一一分割為特定個數所形成之複數個區塊; 將前述類比數位轉換電路以貫通前述層間絕緣膜內的層間通孔,電性地連接於與前述類比數位轉換電路相對應之感測器陣列之前述區塊。
- 如請求項10之影像感測器裝置之製造方法,其中形成前述半導體薄膜之步驟是於前述層間絕緣膜上,形成:不定形矽膜、不定形鍺膜、不定形矽鍺膜、不定形鍺錫膜、不定形矽鍺錫膜、或從由該些積層膜所形成之群組選擇之1個膜,於進行電晶體之元件分離後,進行熱處理使前述膜結晶化。
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