TW201447963A - 感應耦合電漿處理裝置 - Google Patents
感應耦合電漿處理裝置 Download PDFInfo
- Publication number
- TW201447963A TW201447963A TW103102950A TW103102950A TW201447963A TW 201447963 A TW201447963 A TW 201447963A TW 103102950 A TW103102950 A TW 103102950A TW 103102950 A TW103102950 A TW 103102950A TW 201447963 A TW201447963 A TW 201447963A
- Authority
- TW
- Taiwan
- Prior art keywords
- slit
- inductively coupled
- width
- coupled plasma
- metal window
- Prior art date
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims description 61
- 229910052751 metal Inorganic materials 0.000 claims abstract description 110
- 239000002184 metal Substances 0.000 claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 230000005684 electric field Effects 0.000 claims description 25
- 238000009826 distribution Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 210000002381 plasma Anatomy 0.000 claims 2
- 102100027340 Slit homolog 2 protein Human genes 0.000 claims 1
- 101710133576 Slit homolog 2 protein Proteins 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 abstract description 10
- 230000008878 coupling Effects 0.000 abstract description 6
- 238000010168 coupling process Methods 0.000 abstract description 6
- 238000005859 coupling reaction Methods 0.000 abstract description 6
- 230000001939 inductive effect Effects 0.000 abstract description 6
- 230000001965 increasing effect Effects 0.000 description 11
- 230000005284 excitation Effects 0.000 description 10
- 239000010408 film Substances 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 8
- 239000004809 Teflon Substances 0.000 description 7
- 229920006362 Teflon® Polymers 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007723 transport mechanism Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013022544A JP2014154684A (ja) | 2013-02-07 | 2013-02-07 | 誘導結合プラズマ処理装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201447963A true TW201447963A (zh) | 2014-12-16 |
Family
ID=51277545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103102950A TW201447963A (zh) | 2013-02-07 | 2014-01-27 | 感應耦合電漿處理裝置 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2014154684A (ja) |
| KR (1) | KR20140100890A (ja) |
| CN (1) | CN103985624A (ja) |
| TW (1) | TW201447963A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI703901B (zh) * | 2015-07-22 | 2020-09-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7169885B2 (ja) * | 2019-01-10 | 2022-11-11 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
| JP7403052B2 (ja) | 2020-01-27 | 2023-12-22 | 日新電機株式会社 | プラズマ源及びプラズマ処理装置 |
| JP7403348B2 (ja) * | 2020-02-21 | 2023-12-22 | 東京エレクトロン株式会社 | アンテナセグメント及び誘導結合プラズマ処理装置 |
| JP7403347B2 (ja) * | 2020-02-21 | 2023-12-22 | 東京エレクトロン株式会社 | 誘導結合アンテナ及びプラズマ処理装置 |
| JP2023003828A (ja) * | 2021-06-24 | 2023-01-17 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000173797A (ja) * | 1998-12-01 | 2000-06-23 | Sumitomo Metal Ind Ltd | マイクロ波プラズマ処理装置 |
| JP2004134495A (ja) * | 2002-10-09 | 2004-04-30 | Fasl Japan Ltd | プラズマ処理装置 |
| JP5479867B2 (ja) * | 2009-01-14 | 2014-04-23 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
| JP5461040B2 (ja) * | 2009-03-23 | 2014-04-02 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| JP5727281B2 (ja) * | 2011-04-21 | 2015-06-03 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
-
2013
- 2013-02-07 JP JP2013022544A patent/JP2014154684A/ja active Pending
-
2014
- 2014-01-23 KR KR1020140008201A patent/KR20140100890A/ko not_active Application Discontinuation
- 2014-01-27 TW TW103102950A patent/TW201447963A/zh unknown
- 2014-01-27 CN CN201410039246.XA patent/CN103985624A/zh active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI703901B (zh) * | 2015-07-22 | 2020-09-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140100890A (ko) | 2014-08-18 |
| JP2014154684A (ja) | 2014-08-25 |
| CN103985624A (zh) | 2014-08-13 |
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