KR20140100890A - 유도 결합 플라즈마 처리 장치 - Google Patents

유도 결합 플라즈마 처리 장치 Download PDF

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Publication number
KR20140100890A
KR20140100890A KR1020140008201A KR20140008201A KR20140100890A KR 20140100890 A KR20140100890 A KR 20140100890A KR 1020140008201 A KR1020140008201 A KR 1020140008201A KR 20140008201 A KR20140008201 A KR 20140008201A KR 20140100890 A KR20140100890 A KR 20140100890A
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KR
South Korea
Prior art keywords
slit
width
metal window
inductively coupled
region
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KR1020140008201A
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English (en)
Korean (ko)
Inventor
요헤이 야마자와
가즈오 사사키
아츠키 후루야
히토시 사이토
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20140100890A publication Critical patent/KR20140100890A/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020140008201A 2013-02-07 2014-01-23 유도 결합 플라즈마 처리 장치 KR20140100890A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013022544A JP2014154684A (ja) 2013-02-07 2013-02-07 誘導結合プラズマ処理装置
JPJP-P-2013-022544 2013-02-07

Publications (1)

Publication Number Publication Date
KR20140100890A true KR20140100890A (ko) 2014-08-18

Family

ID=51277545

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140008201A KR20140100890A (ko) 2013-02-07 2014-01-23 유도 결합 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP2014154684A (ja)
KR (1) KR20140100890A (ja)
CN (1) CN103985624A (ja)
TW (1) TW201447963A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210106907A (ko) * 2020-02-21 2021-08-31 도쿄엘렉트론가부시키가이샤 안테나 세그먼트 및 유도 결합 플라스마 처리 장치
KR20210106908A (ko) * 2020-02-21 2021-08-31 도쿄엘렉트론가부시키가이샤 유도 결합 안테나 및 플라스마 처리 장치
CN115522181A (zh) * 2021-06-24 2022-12-27 东京毅力科创株式会社 成膜装置和成膜方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6593004B2 (ja) * 2015-07-22 2019-10-23 東京エレクトロン株式会社 プラズマ処理装置
JP7169885B2 (ja) * 2019-01-10 2022-11-11 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP7403052B2 (ja) 2020-01-27 2023-12-22 日新電機株式会社 プラズマ源及びプラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000173797A (ja) * 1998-12-01 2000-06-23 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置
JP2004134495A (ja) * 2002-10-09 2004-04-30 Fasl Japan Ltd プラズマ処理装置
JP5479867B2 (ja) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP5461040B2 (ja) * 2009-03-23 2014-04-02 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP5727281B2 (ja) * 2011-04-21 2015-06-03 東京エレクトロン株式会社 誘導結合プラズマ処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210106907A (ko) * 2020-02-21 2021-08-31 도쿄엘렉트론가부시키가이샤 안테나 세그먼트 및 유도 결합 플라스마 처리 장치
KR20210106908A (ko) * 2020-02-21 2021-08-31 도쿄엘렉트론가부시키가이샤 유도 결합 안테나 및 플라스마 처리 장치
CN115522181A (zh) * 2021-06-24 2022-12-27 东京毅力科创株式会社 成膜装置和成膜方法

Also Published As

Publication number Publication date
TW201447963A (zh) 2014-12-16
CN103985624A (zh) 2014-08-13
JP2014154684A (ja) 2014-08-25

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