TW201436208A - 增強型場效電晶體 - Google Patents

增強型場效電晶體 Download PDF

Info

Publication number
TW201436208A
TW201436208A TW102109081A TW102109081A TW201436208A TW 201436208 A TW201436208 A TW 201436208A TW 102109081 A TW102109081 A TW 102109081A TW 102109081 A TW102109081 A TW 102109081A TW 201436208 A TW201436208 A TW 201436208A
Authority
TW
Taiwan
Prior art keywords
layer
semiconductor layer
field effect
effect transistor
reverse polarization
Prior art date
Application number
TW102109081A
Other languages
English (en)
Other versions
TWI525820B (zh
Inventor
Heng-Kuang Lin
Chien-Kai Tung
Original Assignee
Huga Optotech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Huga Optotech Inc filed Critical Huga Optotech Inc
Priority to TW102109081A priority Critical patent/TWI525820B/zh
Priority to US14/209,024 priority patent/US9299824B2/en
Publication of TW201436208A publication Critical patent/TW201436208A/zh
Priority to US15/065,006 priority patent/US9647102B2/en
Application granted granted Critical
Publication of TWI525820B publication Critical patent/TWI525820B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H01L29/7785—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material with more than one donor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

一種增強型場效電晶體，包括一基板、位於基板上方的一緩衝層、位於緩衝層上方的一第一半導體層、位於第一半導體層上方的第二半導體層以及位於第二半導體層上方的一p+三五族半導體層。所述增強型場效電晶體還包括一反極化層，位於第二半導體層與p+三五族半導體層之間。這層反極化層能拉升第一半導體層與第二半導體層之間的導帶(Ec)。

Description

增強型場效電晶體
本發明是有關於一種增強型場效電晶體(E-mode field effect transistor)，且特別是有關於一種能提高元件之臨界電壓(threshold voltage)的增強型場效電晶體。
近來三五族材料如氮化鎵(GaN)在高頻的功率元件上發展迅速，因為其材料特性可藉由壓電效應在接面處產生二維電子氣(two-dimensional electron gas，2DEG)，因電子遷移率以及濃度非常高且片電阻值低，所以具有高電流密度輸出、低切換損失，高電壓操作以及之優點。
氮化鎵系場效電晶體的操作包括常開型(normally on)和常關型(normally off)兩種，其中執行常關型操作的氮化鎵系場效電晶體一般為增強型場效電晶體(E-mode FET)。然而，目前的氮化鎵系增強型場效電晶體的臨界電壓(threshold voltage)仍偏低，尚不能滿足商業上產品應用規格的需求。
本發明提出一種增強型場效電晶體，包括一基板、位於基板上的一緩衝層、位於緩衝層上的一第一半導體層、位於第一半導體層上的第二半導體層以及位於第二半導體層上的一p+三五族半導體層。所述增強型場效電晶體還包括一反極化層，位於第二半導體層與p+三五族半導體層之間。
基於上述，本發明利用p型重掺雜(p+)的三五族半導體層搭配下方的高壓電極化之反極化層，能有效拉升導帶(conduction band edge,Ec)高於費米能階。另外，本發明的反極化層如為本質AlxInyGa1-x-yN層時，其鋁含量沿磊晶方向連續地減少或不連續地減少，則可進一步達到降低價帶(valence band edge,Ev)受限於費米能階之限制。因此，不論是藉由拉升導帶(Ec)或降低價帶(Ev)來空乏第一半導體層之電子，皆可有效提升增強型場效電晶體之臨界電壓。
100‧‧‧基板
102‧‧‧緩衝層
104‧‧‧第一半導體層
106‧‧‧第二半導體層
108‧‧‧p+三五族半導體層
110、310、610‧‧‧反極化層
112‧‧‧二維電子氣
114‧‧‧閘極
116a‧‧‧源極
116b‧‧‧汲極
Ec‧‧‧導帶
Ef‧‧‧費米能階
Ev‧‧‧價帶
e1、e2、e3‧‧‧導帶與費米能階的距離
圖1是依照本發明之第一實施例之一種增強型場效電晶體的剖面示意圖。
圖2A是模擬沒有圖1之反極化層的增強型場效電晶體之能帶(Band energy)變化曲線圖。
圖2B是模擬有圖1之反極化層的增強型場效電晶體之能帶 (Band energy)變化曲線圖。
圖3是依照本發明之第二實施例之一種增強型場效電晶體的剖面示意圖。
圖4是第二實施例的反極化層之多種能帶變化曲線圖。
圖5是模擬圖3之反極化層內的鋁含量沿磊晶方向連續地減少的增強型場效電晶體之能帶變化曲線圖。
圖6是依照本發明之第三實施例之一種增強型場效電晶體的剖面示意圖。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
下文中搭配圖式來描述本發明之實施例，然而本發明還可用多種不同形式來實踐，且不應將其解釋為限於本文所陳述之實施例。在圖式中，為明確起見可能將各層以及區域的尺寸以及相對尺寸作誇張的描繪。
圖1是依照本發明之一實施例之一種增強型場效電晶體的剖面示意圖。
請參照圖1，本實施例的增強型場效電晶體包括基板100、位於基板100上方的一緩衝層(buffer layer)102、位於緩衝層102上方的第一半導體層104、位於第一半導體層104上方的第二半導體層106以及位於第二半導體層106上方的一p+三五族半導 體層(p+-III-V semiconductor layer)108。基板100可為矽基板、藍寶石基板(spphire)、碳化矽基板(SiC)及氮化鎵基板(GaN)；第一半導體層104可為本質GaN(i-GaN)層；第二半導體層106可為本質AlGaN(i-AlGaN)層；p+三五族半導體層108可為p+AlxInyGa1-x-yN層，其中0x1且0y1。本實施例的增強型場效電晶體還有一反極化層110位於第二半導體層106與p+三五族半導體層108之間，其中反極化層110例如為ZnO層；或者鋁含量固定的本質AlxInyGa1-x-yN層，其中0x1且0<y1。
反極化層110在增強型場效電晶體內具有拉升導帶(conduction band edge,Ec)高於費米能階(Ef)的能力，如圖2A以及圖2B所示。圖2A是模擬沒有圖1之反極化層的場效電晶體之能帶(band energy)變化曲線圖；圖2B是模擬有圖1之反極化層的增強型場效電晶體之能帶(band energy)變化曲線圖，其中反極化層110是以本質AlInN(i-AlInN)為例；第一半導體層104是以i-GaN為例；第二半導體層106是以i-AlGaN為例；p+三五族半導體層108是以p+-AlInN層為例。與圖2A中的e1相較，圖2B中的e2顯示具有反極化層110的增強型場效電晶體其導帶明顯獲得拉升(e2>e1)。
再者，圖1之增強型場效電晶體更包括一閘極114設置於p+三五族半導體層108上方以及一源極116a與一汲極116b設置於第二半導體層106上方。於第一半導體層104和第二半導體層106之界面間則具有二維電子氣(Two-Dimensional Electron Gas；2DEG)112。
此外，本實施例利用在p+三五族半導體層108下方高壓電極化的反極化層110創造出反極化電場，藉以拉升第一半導體層104與第二半導體層106之界面的能階，進而提升本發明增強型場效電晶體之整體能階，並增加移除第一半導體層104和第二半導體層106界面之二維電子氣112的能力(即提高元件的臨界電壓)，達成常關型的元件操作模式。
圖3是依照本發明第二實施例之一種增強型場效電晶體的剖面示意圖，其中使用與第一實施例(即圖1)相同的元件符號代表相同或類似的構件。
請參照圖3，本實施例之增強型場效電晶體與圖1的差別在於，當反極化層310為本質AlxInyGa1-x-yN層時(其中0x1且0<y1)，其鋁含量可沿磊晶方向連續地減少或者不連續地減少，使反極化層310的能帶產生變化，如圖4中(a)~(i)所示的九種能帶變化曲線，其中深度零為反極化層310起始之處，約當於圖5中P+-AlInN與i-AlInN交接的位置，當然本實施例並不限於此。
圖5是模擬本實施例之反極化層310內的鋁含量沿磊晶方向連續地減少(如圖4(e)所示)時的增強型場效電晶體之能帶變化曲線圖，其餘結構則與圖2B相同。從圖5可觀察到反極化層310(i-AlInN)的能帶也是連續增加，且比較圖2A中的e1與圖5中的e3可得到，具有鋁含量沿磊晶方向連續地減少的反極化層，同樣具有拉升導帶的功效(e3>e1)。
圖6是依照本發明第三實施例之一種增強型場效電晶體的剖面示意圖，其中使用與前述實施例(即圖1、圖3)相同的元件符號代表相同或類似的構件。
請參照圖6，本實施例之增強型場效電晶體與圖1的差別在於反極化層610是超晶格結構(superlattice)。「超晶格」是指兩種或多種材料構成的交替堆疊結構，且每一層的厚度約在幾個奈米的數量級。本實施例的反極化層610可以是由具有不同能隙(band gap)的三五族半導體所構成，譬如以本質AlxInyGa1-x-yN和本質InzGa1-zN構成的交替堆疊結構，其中0x1、0y1、0z1，且y與z不能同時等於0；或以本質AlxInyGa1-x-yN和本質Alx1Iny1Ga1-x1-y1N構成的交替堆疊結構，其中0x1、0y1、0x11、0y11，且y與y1不能同時等於0。另外，反極化層610也可以是由具有不同能隙的二六族半導體所構成，例如ZnO。
然而，在第二實施例及第三實施例中，同樣可利用在p+三五族半導體層108下方高壓電極化的反極化層310、610創造出反極化電場，藉以拉升第一半導體層104與第二半導體層106之界面的能階，進而提升本發明增強型場效電晶體之整體能階，並增加移除第一半導體層104和第二半導體層106界面之二維電子氣112的能力(即提高元件的臨界電壓)，達成常關型的元件操作模式。
綜上所述，本發明藉由在p+三五族半導體層和第二半導體層之間設置反極化層，提升第一半導體層與第二半導體層之界 面的導帶(Ec)，進而提高增強型場效電晶體之臨界電壓。另外，若本發明所揭示的反極化層如為本質AlxInyGa1-x-yN層時，其鋁含量沿磊晶方向連續地減少或不連續地減少可進一步達到降低價帶(valence band edge,Ev)受限於費米能階之限制，同樣有利於提升增強型場效電晶體之臨界電壓。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。
100‧‧‧基板
102‧‧‧緩衝層
104‧‧‧第一半導體層
106‧‧‧第二半導體層
108‧‧‧p+三五族半導體層
110‧‧‧反極化層
112‧‧‧二維電子氣
114‧‧‧閘極
116a‧‧‧源極
116b‧‧‧汲極

Claims (11)

  1. 一種增強型場效電晶體，包括：一基板；一緩衝層，位於該基板上方；一第一半導體層，位於該緩衝層上方；一第二半導體層，位於該第一半導體層上方，其中於該第一半導體層和該第二半導體層之界面間具有一二維電子氣；一p+三五族半導體層，位於該第二半導體層上方；以及一反極化層，位於該第二半導體層與該p+三五族半導體層之間。
  2. 如申請專利範圍第1項所述的增強型場效電晶體，其中該反極化層為ZnO層。
  3. 如申請專利範圍第1項所述的增強型場效電晶體，其中該反極化層為本質AlxInyGa1-x-yN層，其中0x1且0<y1。
  4. 如申請專利範圍第3項所述的增強型場效電晶體，其中該反極化層內的鋁含量是固定的。
  5. 如申請專利範圍第3項所述的增強型場效電晶體，其中該反極化層內的鋁含量沿磊晶方向連續地減少或不連續地減少。
  6. 如申請專利範圍第1項所述的增強型場效電晶體，其中該反極化層為超晶格結構。
  7. 如申請專利範圍第6項所述的增強型場效電晶體，其中該反極化層內的鋁含量是固定的。
  8. 如申請專利範圍第1項所述的增強型場效電晶體，其中該反極化層內的鋁含量沿磊晶方向連續地減少或不連續地減少。
  9. 如申請專利範圍第7項所述的增強型場效電晶體，其中該反極化層為本質AlxInyGa1-x-yN和InzGa1-zN構成的交替堆疊結構，其中0x1、0y1、0z1，且y與z不能同時等於0。
  10. 如申請專利範圍第7項所述的增強型場效電晶體，其中該反極化層為本質AlxInyGa1-x-yN和Alx1Iny1Ga1-x1-y1N構成的交替堆疊結構，其中0x1、0y1、0x11、0y11，且y與y1不能同時等於0。
  11. 如申請專利範圍第7項所述的增強型場效電晶體，其中該p+三五族半導體層包括p+AlxInyGa1-x-yN層，其中0x1且0y1。
TW102109081A 2013-03-14 2013-03-14 增強型場效電晶體 TWI525820B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW102109081A TWI525820B (zh) 2013-03-14 2013-03-14 增強型場效電晶體
US14/209,024 US9299824B2 (en) 2013-03-14 2014-03-13 Field effect transistor
US15/065,006 US9647102B2 (en) 2013-03-14 2016-03-09 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102109081A TWI525820B (zh) 2013-03-14 2013-03-14 增強型場效電晶體

Publications (2)

Publication Number Publication Date
TW201436208A true TW201436208A (zh) 2014-09-16
TWI525820B TWI525820B (zh) 2016-03-11

Family

ID=51523581

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102109081A TWI525820B (zh) 2013-03-14 2013-03-14 增強型場效電晶體

Country Status (2)

Country Link
US (2) US9299824B2 (zh)
TW (1) TWI525820B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI791364B (zh) * 2021-12-28 2023-02-01 新唐科技股份有限公司 常關型氮化鎵元件的製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015176936A (ja) * 2014-03-13 2015-10-05 株式会社東芝 半導体装置
TWI641133B (zh) * 2015-03-31 2018-11-11 晶元光電股份有限公司 半導體單元
US9577048B1 (en) * 2015-09-24 2017-02-21 Epistar Corporation Heterostructure field-effect transistor
CN107393956A (zh) * 2017-07-06 2017-11-24 中国科学院半导体研究所 包含p型超晶格的增强型高电子迁移率晶体管及制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM298777U (en) 2006-02-23 2006-10-01 Arima Optoelectronics Corp Multi-layer superlattice high-power transistor
JP5032965B2 (ja) * 2007-12-10 2012-09-26 パナソニック株式会社 窒化物半導体トランジスタ及びその製造方法
JP5487615B2 (ja) * 2008-12-24 2014-05-07 サンケン電気株式会社 電界効果半導体装置及びその製造方法
JP2010225765A (ja) * 2009-03-23 2010-10-07 Panasonic Corp 半導体装置及びその製造方法
JP5874173B2 (ja) 2011-02-25 2016-03-02 富士通株式会社 化合物半導体装置及びその製造方法
US8866154B2 (en) * 2013-03-14 2014-10-21 Wisconsin Alumni Research Foundation Lattice mismatched heterojunction structures and devices made therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI791364B (zh) * 2021-12-28 2023-02-01 新唐科技股份有限公司 常關型氮化鎵元件的製造方法

Also Published As

Publication number Publication date
US9647102B2 (en) 2017-05-09
US20160190295A1 (en) 2016-06-30
US20140264326A1 (en) 2014-09-18
US9299824B2 (en) 2016-03-29
TWI525820B (zh) 2016-03-11

Similar Documents

Publication Publication Date Title
US9412856B2 (en) Semiconductor device
JP6113135B2 (ja) 半導体フィールドプレートを含むｉｉｉ−ｖ族トランジスタ
JP6732131B2 (ja) 半導体デバイス及び半導体デバイスを設計する方法
JP5505698B2 (ja) 半導体装置
US10784361B2 (en) Semiconductor device and method for manufacturing the same
JP2008171843A (ja) 半導体電子デバイス
US8659030B2 (en) III-nitride heterojunction devices having a multilayer spacer
TWI621265B (zh) 半導體裝置及其製作方法
US9076850B2 (en) High electron mobility transistor
US20150263155A1 (en) Semiconductor device
US9647102B2 (en) Field effect transistor
US11355626B2 (en) High electron mobility transistor
WO2013109884A1 (en) Iiii -n- based double heterostructure field effect transistor and method of forming the same
CN110310981B (zh) 氮面增强型复合势垒层氮化镓基异质结场效应管
JP2010040828A (ja) 窒化物半導体装置
JP5793101B2 (ja) 半導体装置
TWI790291B (zh) 半導體功率元件
TWM508782U (zh) 半導體裝置
US20190035922A1 (en) Semiconductor device, electronic part, electronic apparatus, and method for fabricating semiconductor device
Islam et al. Comparative study between AlGaN/GaN and AlInN/GaN high electron mobility transistors
Suh Lateral GaN HEMT Structures
KR101622916B1 (ko) 양성자 빔 조사에 의한 상시불통형 GaN계 트랜지스터 및 그 제조 방법
Das et al. AlGaN/GaN nanoscale HEMT with Arc shaped gate and stacked HfO 2-SiO 2 gate dielectric
Kuzuhara GaN-based electronics