TW201436188A - 無蓋式感測器模組及其製造方法 - Google Patents

無蓋式感測器模組及其製造方法 Download PDF

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TW201436188A
TW201436188A TW103108373A TW103108373A TW201436188A TW 201436188 A TW201436188 A TW 201436188A TW 103108373 A TW103108373 A TW 103108373A TW 103108373 A TW103108373 A TW 103108373A TW 201436188 A TW201436188 A TW 201436188A
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substrate
contact pads
spacer
holes
sensor
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TW103108373A
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TWI533444B (zh
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Vage Oganesian
zhen-hua Lu
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Optiz Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices

Abstract

一種感測器封裝體包括主基材總成，且該主基材總成包括：一第一基材；多數電路層，係在該第一基材中；及多數第一接觸墊，係與該等電路層電氣地耦合。一感測器晶片包括：一第二基材，其具有相對第一與第二表面；(多數)感測器，係形成在該第二基材之該第一表面上或下方；多數第二接觸墊，係形成在該第二基材之該第一表面且與該(等)感測器電氣地耦合；多數孔，各形成在該第二基材之該第二表面中且延伸通過該第二基材至其中一第二接觸墊；及多數導線，各由其中一第二接觸墊，通過該等多數孔中之一孔，且沿該第二基材之該第二表面延伸。多數電氣連接器各電氣地連接其中一第一接觸墊及其中一導線。

Description

無蓋式感測器模組及其製造方法
這申請案請求2013年3月12日申請之美國暫時申請案第61/778,244號之利益，且該申請案在此加入作為參考。
本發明係有關於微電子裝置之封裝，且更特別地有關於光學或化學半導體裝置之一封裝。
半導體裝置之趨勢是更小之積體電路(IC)裝置(亦稱為晶片)，且該等積體電路裝置封裝在更小封裝體(保護晶片同時提供晶片外通訊(off chip signaling)連接性)中。其中一例係影像感測器，該等影像感測器係包括將入射光轉換成電信號(以良好空間解析度準確地反映之光偵測器之強度及顏色資訊)之IC裝置。
在發展用於影像感測器之晶圓級封裝解決方法之背後有不同驅動力。例如，較小形狀因子(即用以達成最高容量/體積比率之較大密度)克服空間限制且可得到較小相機模組解決方法。較大電氣效能可以較短互連長度達成，且該較短互連長度增加電氣效能及因此裝置速度，並且大幅降低晶片電力消耗。
目前，板載晶片(COB一其中裸晶直接安裝在一印刷電路板上)及Shellcase晶圓級CSP(其中該晶圓係積層在兩片玻璃之間)係用以建構影像感測器模組(例如用於行動裝置相機、光學滑鼠等)之主要封裝及組裝程序。但是，隨著影像感測器使用之像素越來越高，由於組裝限制、尺寸限制(該需求係針對較低輪廓裝置而言)、產率問題及所需光學效能之改良，COB及Shellcase WLCSP組裝變得越來越困難。
需要提供具有改良效能之一低輪廓封裝解決方法之一改良封裝體及封裝技術。
一種感測器封裝體包括一主基材總成及一感測器晶片。該主基材總成包括：一第一基材；一或一以上電路層，係在該第一基材中；及多數第一接觸墊，係與該等一或一以上電路層電氣地耦合。該感測器晶片包括：一第二基材，其具有相對第一與第二表面；一或一以上感測器，係形成在該第二基材之該第一表面上或下方；多數第二接觸墊，係形成在該第二基材之該第一表面且與該等一或一以上感測器電氣地耦合；多數孔，各形成在該第二基材之該第二表面中且延伸通過該第二基材至其中一第二接觸墊；及多數導線，各由其中一第二接觸墊，通過該等多數孔中之一孔，且沿該第二基材之該第二表面延伸。多數電氣連接器各電氣地連接其中一第一接觸墊及其中一導線。
一種形成感測器封裝體之方法包括提供一第一 基材，該第一基材包括一或一以上電路層及與該等一或一以上電氣地耦合之多數第一接觸墊；提供一感測器晶片，該感測器晶片包括：一第二基材，其具有相對第一與第二表面；一或一以上感測器，係在該第二基材之該第一表面上或下方；及多數第二接觸墊，係形成在該第二基材之該第一表面且與該等一或一以上感測器電氣地耦合；在該第二基材之該第二表面中形成多數孔，其中該等多數孔之各孔延伸通過該第二基材且至其中一第二接觸墊；形成多數導線，各導線由其中一第二接觸墊，通過該等多數孔中之一孔，且沿該第二基材之該第二表面延伸；及形成多數電氣連接器，各電氣連接器電氣地連接其中一第一接觸墊及其中一導線。
本發明之其他目的及特徵將藉由檢視說明書、申請專利範圍及附圖而了解。
10‧‧‧晶圓(基材)
12‧‧‧影像感測器
12a‧‧‧作用區域
14‧‧‧光偵測器
16‧‧‧電路
18‧‧‧接觸墊
20‧‧‧濾色器及/或微透鏡
21‧‧‧保護總成
22‧‧‧分隔件基材
24‧‧‧開口
26‧‧‧分隔件材料；分隔層
28‧‧‧保護帶或類似層
30‧‧‧孔穴
32‧‧‧孔
34‧‧‧絕緣層
36‧‧‧光阻
38‧‧‧電氣線路；導線
40‧‧‧密封層
42‧‧‧接觸墊
44‧‧‧互連物
46‧‧‧主基材
48‧‧‧接觸墊
50‧‧‧電路層
52‧‧‧透鏡模組
54‧‧‧殼體
56‧‧‧透鏡
60‧‧‧化學偵測器
圖1A至1H係依序顯示形成該感測器總成之步驟之橫截面側視圖。
圖2係顯示該感測器總成之另一實施例之橫截面側視圖。
圖3A至3D係顯示在該分隔件基材中之開口之不同組態的俯視圖。
本發明係有關於感測器裝置，且更特別係有關於形成一無蓋式晶片級封裝體。該感測器之作用區域可暴露 於環境用以偵測例如氣體及化學物之實體物質，或可整合在只偵測光子且沒有與一保護蓋相關之扭曲或光子損失之一透鏡模組結構中。
圖1A至1H係顯示一封裝體影像感測器之形成步驟，但是本發明不限於影像感測器。該形成步驟以一晶圓10(基材)開始，且該晶圓10上含有多數影像感測器12，如圖1A所示。各影像感測器12包括具有多數光偵測器14之一作用區域，以及支持電路16及接觸墊18。該等接觸墊18係與該等光偵測器14及/或用以提供晶片外通訊之支持電路16電氣地連接。各光偵測器14將光能轉換成一電壓信號。可包括另外之電路以放大該電壓，及/或將該電壓轉換成數位資料。濾色器及/或微透鏡20可安裝在該等光偵測器14上。這種感測器在所屬技術領域中是習知的，且在此不再說明。
一保護總成21係藉由以一分隔件基材22開始而形成，且該分隔件基材22可為玻璃或任何其他剛性材料。玻璃係用於分隔件基材22之較佳材料。玻璃厚度在25至1500μm之範圍內係較佳的。感測器區域窗開口24係形成在該分隔件基材22中在將對應於該影像感測器12(即，設置於該影像感測器12上方)之位置。開口24可藉由雷射、噴砂、蝕刻或其他適當孔穴形成方法形成。一任選之分隔件材料26層可沈積在分隔件基材22上。這沈積亦可在形成開口24前發生，使得對應開口形成在該分隔層26中。但是，在分隔件材料26中之開口24可與在分隔件基材22中之開口不同(例如在分隔件材料26中之開口之尺寸可比在分 隔件基材22中之開口之尺寸大或小)。該分隔層材料26可為藉由滾子、噴塗、網版印刷或任何其他適當方法沈積之聚合物、環氧樹脂或任何其他適當材料。對該分隔層26而言，在5至500μm之範圍內之一厚度是較佳的。一保護帶或類似層28係放/安裝在該分隔件基材22上，且在分隔件基材22及材料26中之開口24形成多數孔穴30。孔穴30之高度宜在5至500μm之範圍內。得到之保護總成21之結構係顯示在圖1B中。
該保護結構總成21係藉由一接合材料安裝/接合在基材10之作用側上。例如，環氧樹脂可藉由滾子沈積且接著熱硬化，或者可使用任何其他適當接合方法。該保護結構總成21分別地密封用於各感測器12之作用區域，但是孔穴30宜不延伸至接觸墊18。接著實施矽薄化以減少基材10之厚度。矽薄化可藉由機械研磨、化學機械拋光(CMP)、濕式蝕刻、常壓氣流電漿(ADP)、乾式化學蝕刻(DCE)及前述程序之組合或任何另一適當矽薄化方法。該薄化矽之厚度宜在100至2000μm之範圍內。得到之結構係顯示在圖1C中。
接著在基材10之底表面中形成多數孔，且該等孔延伸通過基材10以暴露接觸墊18(其中在該孔形成程序中分隔材料26為接觸墊18提供機械支持)。孔32可藉由雷射、乾式蝕刻、濕式蝕刻或所屬技術領域中習知之任何另一適當孔形成方法。較佳地，使用一雷射形成孔32。較佳地，在接觸墊18之該等孔32之寬度不大於接觸墊18使得沒有暴露矽環繞接觸墊18。該在基材10之底表面之該等孔32 之開口宜大於在接觸墊18之該等孔32之寬度，藉此孔32具有終止在且暴露接觸墊18之漏斗形狀。或者，孔32可具有垂直側壁。接著沿孔32之側壁及基材10之底表面(但是不在接觸墊18上)形成一絕緣層34。絕緣層34可藉由在基材10之非作用側上沈積例如二氧化矽或氮化矽一層絕緣材料形成。一非限制例可藉由PECVD或任何另一適當沈積方法包括具有至少0.5μm之一厚度之二氧化矽。使用一光刻程序移除在孔32中在接觸墊18上之層34之多數部份。詳而言之，一層光阻係藉由噴塗或任何另一適當沈積方法沈積在該晶圓之非作用側上方。該光阻係使用在所屬技術領域中習知之適當光刻程序曝光及蝕刻以移除在接觸墊18上之該光阻。接著藉由，例如，電漿蝕刻，可選擇地移除在該等接觸墊18上方之絕緣層34之暴露部份。接著可藉由乾式電漿蝕刻或在所屬技術領域中習知之任何其他化學/濕式光阻剝離法移除該光阻。得到之結構係顯示在圖1D中。
在該絕緣層34上沈積一層導電材料。該導電材料可為銅、鋁、導電聚合物或任何其他適當導電材料。該等導電材料可藉由物理蒸氣沈積(PVD)、化學蒸氣沈積法(CVD)、電鍍或任何其他適當沈積方法沈積。較佳地，該導電材料層係藉由物理蒸氣沈積(PVD)沈積之一第一鈦層及一第二銅層。接著藉由一光刻程序圖案化該導電層(即光阻36係沈積在該導電層上且曝光並且選擇地蝕刻以便只留在孔32及選擇部份相鄰孔32中，接著進行一導電材料蝕刻以移除導電層之暴露部份)。留下的是該導電材料之 多數電氣線路38，且各電氣線路38由其中一接觸墊18，沿放置該接觸墊之該孔之側壁，且在該基材10之底表面上方延伸，如圖1E所示。
該光阻36可使用乾電漿蝕刻或所屬技術領域中具有通常知識者任何其他化學/濕式光阻剝離法剝離。或者，可在該等導線38(例如Ni/Pd/Au)上實施一電鍍程序。可在基材10之底表面上方及在孔32中形成一選擇密封層40(覆蓋導線38)。該密封層40可為聚醯亞胺、陶瓷、聚合物、聚合物複合材、聚對二甲苯、二氧化矽、環氧樹脂、聚矽氧、瓷器、玻璃、樹脂、及前述材料之組合或任何其他適當介電材料。密封層40宜為1至3μm厚度，且該較佳材料係可藉由噴塗沈積之液體光可成像聚合物，例如焊料遮罩。或者，該等孔32可藉由該封裝材料填充。接著使用一光刻程序圖案化該密封層40以選擇地移除層40之多數部份且界定多數接觸墊42(即導線38之暴露部份)。得到之結構係顯示在圖1F中。
接著在接觸墊42上形成多數互連物44。互連物44可為球格柵陣列(BGA)、基板格柵陣列(LGA)、導電凸塊、銅柱或任何其他適當互連結構。球格柵陣列係其中一較佳互連之方法，且可藉由網版印刷沈積該互連物44，然後進行一迴焊程序。接著切割/單粒化該結構以形成各具有其中一感測器12之分開晶粒。可利用機械刀片切割設備、雷射切割或任何其他適當程序達成組件之晶圓級切割/單粒化。得到之結構係顯示在圖1G中。
在圖1G中之結構可使用互連物44安裝在一主基材46上。主基材46可為一有機彎曲PCB、FR4 PCB、矽(硬)、玻璃、陶瓷或任何其他種類之適當基材。該主基材46包括與(多數)電路層50電氣地連接之接觸墊48。各互連物44使用所屬技術領域中習知之表面安裝技術(SMT)(可包括拾取與放置裝置)連接其中一接觸墊42及其中一接觸墊48。接著移除該保護帶28。一透鏡模組22可安裝在主基材46上(即，在該感測器12上方)，且得到之結構顯示在圖1H中。一示範透鏡模組52可包括與該主基材46接合之一殼體54，其中該殼體54支持一或一以上透鏡56在該感測器12上。對這最終結構而言，該影像感測器12係藉由互連物44固定在主基材46上，且透鏡模組52亦固定在該主基材46上，其中該透鏡模組52係在沒有會扭曲光或造成光子損失之任何中間保護基材或其他光學介質之情形下將入射光直接聚焦在光偵測器14上。該透鏡模組52保護影像感測器12不受污染。多數導線38電氣地連接接觸墊18及互連物44，且該等互連物44接著電氣地連接主基材46之接觸墊48及電路層50。
上述用於感測器12之封裝技術亦適用於非光學應用。例如，感測器12可包括一化學偵測器60而非光偵測器14，如圖2所示。在這情形下，不包括透鏡模組52，且該感測器12暴露於環境用以偵測例如氣體或化學物之實體物質。
應注意的是在分隔件基材22中在感測器12上之 作用區域上方之開口24不必共用相同形狀及/或尺寸。圖3A至3D顯示在分隔件基材22中相對在分隔件基材22下方該感測器12之作用區域12a(即基材10包含一或一以上感測器之區域)，在分隔件基材22中之開口24之示範組態。如圖3A所示，一單一開口24具有實質匹配下方之作用區域12a之尺寸的尺寸。圖3B顯示具有小於該作用區域12a尺寸之尺寸之一單一開口24。圖3C與3D顯示可為設置在作用區域12a上方之多數矩形或圓形開口。
應了解的是本發明不限於上述及在此所示之實施例，而是包含落在附加申請專利範圍之範疇內之任一或所有變化。例如，本發明在此提及者不是意圖限制任一申請專利範圍或申請專利範圍用語之範疇，而只是提及可被一或一以上申請專利範圍涵蓋之一或一以上特徵。上述材料、程序及數字例只是例示，且不應被視為限制申請專利範圍。此外，由申請專利範圍及說明書可了解，不是所有方法步驟均必須以所示或聲明之精確順序實施，而是以容許適當形成本發明之封裝影像感測器之任一順序實施。最後，多數單層材料可形成為多數層該等或類似材料，且反之亦然。
應注意的是，在此使用之用語“在...上方”及“在...上”均內含地包括“直接在...上”(沒有中間材料、元件或空間設置在其間)及“間接在...上”(中間材料、元件或空間設置在其間)。類似地，該用語“相鄰”包括“直接相鄰”(沒有中間材料、元件或空間設置在其間)及“間接相鄰”(中間材料、元件 或空間設置在其間)，“安裝在”包括“直接安裝”(沒有中間材料、元件或空間設置在其間)及“間接安裝”(中間材料、元件或空間設置在其間)，且“電氣耦合”包括“直接電氣耦合”(沒有中間材料或元件設置在其間且電氣連接該等元件在一起)及“間接安裝”(中間材料或元件設置在其間且電氣連接該等元件在一起)。例如，形成一元件“在一基材上”可包括在該基材上直接形成該元件且沒有中間材料/元件在其間，及在該基材上間接形成該元件且一或一以上中間材料/元件在其間。
10‧‧‧晶圓(基材)
12‧‧‧影像感測器
22‧‧‧分隔件基材
26‧‧‧分隔件材料；分隔層
44‧‧‧互連物
46‧‧‧主基材
48‧‧‧接觸墊
50‧‧‧電路層
52‧‧‧透鏡模組
54‧‧‧殼體
56‧‧‧透鏡

Claims (20)

  1. 一種感測器封裝體，包含一主基材總成，包括：一第一基材；一或一以上電路層，係在該第一基材中；及多數第一接觸墊，係與該等一或一以上電路層電氣地耦合；一感測器晶片，包括：一第二基材，其具有相對第一與第二表面；一或一以上感測器，係形成在該第二基材之第一表面上或下方；多數第二接觸墊，係形成在該第二基材之第一表面處且與該等一或一以上感測器電氣地耦合；多數孔，各形成在該第二基材之第二表面中且延伸通過該第二基材至其中一第二接觸墊；及多數導線，各由其中一第二接觸墊、通過該等多數孔中之一孔、且沿該第二基材之第二表面來延伸；多數電氣連接器，各電氣地連接其中一第一接觸墊及其中一導線。
  2. 如請求項1之感測器封裝體，更包含：一分隔件基材，係安裝在該第二基材之第一表面 上方，其中該分隔件基材包括一或一以上開口而其設置在該等一或一以上感測器上方。
  3. 如請求項2之感測器封裝體，更包含：一分隔件材料，係設置在該分隔件基材與該第二基材之間，其中該分隔件材料包括一或一以上開口而其設置在該等一或一以上感測器上方，且其中該分隔件材料係設置在該等第二接觸墊上且對該等第二接觸墊提供機械支持。
  4. 如請求項1之感測器封裝體，更包含：一分隔件基材，係安裝在該第二基材之第一表面上，其中該分隔件基材包括一或一以上開口而其設置在該等一或一以上感測器上方，且其中該分隔件基材係設置在該等第二接觸墊上且對該等第二接觸墊提供機械支持。
  5. 如請求項1之感測器封裝體，更包含：一層絕緣材料，係在各導線與該第二基材之間。
  6. 如請求項1之感測器封裝體，更包含：一層絕緣材料，係設置在該第二基材之第二表面上方，且覆蓋該等多數電氣連接器中與該等多數電氣連接器呈電氣接觸之接觸墊部份以外的部分。
  7. 如請求項1之感測器封裝體，其中該等多數孔之各孔具有一漏斗形橫截面。
  8. 如請求項1之感測器封裝體，其中該等一或一以上感測器包括多數光偵測器，且該等光偵測器係組配成接受入 射在該第二基材之第一表面上之光。
  9. 如請求項8之感測器封裝體，更包含：一透鏡模組，係安裝在該主基材總成上，其中該透鏡模組包括一或一以上透鏡而其設置成用以聚焦光在該等光偵測器上。
  10. 如請求項1之感測器封裝體，其中該等一或一以上感測器包括一化學偵測器，該化學偵測器係組配成偵測靠近該第二基材之第一表面之實體物質。
  11. 一種形成感測器封裝體之方法，包含：提供一第一基材，該第一基材包括一或一以上電路層，及與該等一或一以上電路層電氣地耦合之多數第一接觸墊；提供一感測器晶片，該感測器晶片包括：一第二基材，其具有相對第一與第二表面；一或一以上感測器，係在該第二基材之第一表面上或下方；及多數第二接觸墊，係形成在該第二基材之第一表面處且與該等一或一以上感測器電氣地耦合；在該第二基材之第二表面中形成多數孔，其中該等多數孔之各孔延伸通過該第二基材且延伸至其中一第二接觸墊；形成多數導線，各導線由其中一第二接觸墊、通過該等多數孔中之一孔、且沿該第二基材之該第二表面來延伸；及形成多數電氣連接器，各電氣連接器電氣地連接 其中一第一接觸墊及其中一導線。
  12. 如請求項11之方法，更包含：在該第二基材之第一表面上方安裝一分隔件基材，其中該分隔件基材包括一或一以上開口而其設置在該等一或一以上感測器上方。
  13. 如請求項12之方法，更包含：在該分隔件基材與該第二基材之間形成一分隔件材料，其中該分隔件材料包括一或一以上開口而其設置在該等一或一以上感測器上方，且其中該分隔件材料係設置在該等第二接觸墊上且在形成該等多數孔時對該等第二接觸墊提供機械支持。
  14. 如請求項11之方法，更包含：在該第二基材之第一表面上方安裝一分隔件基材，其中該分隔件基材包括一或一以上開口而其設置在該等一或一以上感測器上方，且其中該分隔件基材係設置在該等第二接觸墊上且在形成該等多數孔時對該等第二接觸墊提供機械支持。
  15. 如請求項11之方法，更包含：在各導線與該第二基材之間形成一層絕緣材料。
  16. 如請求項11之方法，更包含：形成一層絕緣材料，該層絕緣材料係設置在該第二基材之第二表面上方，且覆蓋該等多數電氣連接器中與該等多數電氣連接器呈電氣接觸之接觸墊部份以外的部分。
  17. 如請求項11之方法，其中該等多數孔之各孔具有一漏斗形橫截面。
  18. 如請求項11之方法，其中該等一或一以上感測器包括多數光偵測器，且該等光偵測器係組配成接受入射在該第二基材之第一表面上之光。
  19. 如請求項18之方法，更包含：安裝在該主基材總成上安裝一透鏡模組，其中該透鏡模組包括一或一以上透鏡而其設置成用以聚焦光在該等光偵測器上。
  20. 如請求項11之方法，其中該等一或一以上感測器包括一化學偵測器，該化學偵測器係組配成偵測靠近該第二基材之第一表面之實體物質。
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