TW201435429A - Method of polishing liquid crystal display panels - Google Patents

Method of polishing liquid crystal display panels Download PDF

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Publication number
TW201435429A
TW201435429A TW102144350A TW102144350A TW201435429A TW 201435429 A TW201435429 A TW 201435429A TW 102144350 A TW102144350 A TW 102144350A TW 102144350 A TW102144350 A TW 102144350A TW 201435429 A TW201435429 A TW 201435429A
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liquid crystal
glass substrate
polishing
crystal panel
chemical polishing
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TW102144350A
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Chinese (zh)
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TWI585489B (en
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Satoshi Suzuki
Masahiro Sato
Hirofumi Nishiki
Katsutoshi Takahashi
akinori Aizawa
Naoto Miura
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Kuramoto Co Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

The objective of the present invention is to provide a method for polishing liquid crystal display (LCD) panels that is capable of reducing fragments or damages of large-scale LCD panels, thereby significantly reducing poor displaying quality caused by dimples. The present invention relates to a method for polishing liquid crystal display (LCD) panels, having a step of performing a chemical polishing process on a surface of the LCD panel, the LCD panel being constituted by sandwiching a liquid crystal component in between a first glass substrate having a thin-film transistor layer formed thereon and a second glass substrate having a color filter layer formed thereon, the method of polishing the LCD panel including: an edge-chamfering step to chamfer the edges of the first and second glass substrates prior to the chemical polishing ster; a first glass substrate-mechanically polishing step for performing mechanical polishing to the first glass substrate so that the average diameter of dimples existing on the surface of the first glass substrate is less than 200 μ m after the chemical polishing step is performed; a first residual processing step for removing residuals on the surface of the LCD panel; and a reactive product-removing step for removing reactive produce generated in the chemical polishing step.

Description

液晶面板研磨方法 Liquid crystal panel polishing method

本發明係關於一種液晶面板研磨方法者。 The present invention relates to a method of polishing a liquid crystal panel.

近年來,已依照用途使用液晶顯示器(Liquid Crystal Display,以下稱LCD)做為行動電話、行動遊戲機器、行動終端機器等的顯示用顯示器。 In recent years, liquid crystal displays (hereinafter referred to as LCDs) have been used as displays for display such as mobile phones, mobile game devices, and mobile terminal devices.

在該等LCD中,尤以薄膜電晶體(以下稱TFT)型LCD因為其顯示為高精細,故被廣泛地使用。 Among these LCDs, a thin film transistor (hereinafter referred to as TFT) type LCD is widely used because of its high definition.

在該TFT型LCD中係使用了液晶面板,其係藉由將形成有TFT層的玻璃基板、及形成有濾色器(color filter)(以下稱CF)層的玻璃基板,夾著含有間隔物(spacer)的液晶構件並疊層密封而構成。 In the TFT-type LCD, a liquid crystal panel is used in which a glass substrate on which a TFT layer is formed and a glass substrate on which a color filter (hereinafter referred to as CF) layer is formed are interposed with a spacer. The liquid crystal member of the spacer is laminated and sealed.

另一方面,該TFT型LCD近年來因使用在行動型終端機器等,故對於薄型化的要求日益提升。再者,針對該TFT型LCD的薄型化,藉由將用在TFT型LCD之液晶面板之主要材料的玻璃基板形成為較薄,即可達成TFT型LCD整體的薄型化。 On the other hand, this TFT type LCD has been used in mobile terminal equipment and the like in recent years, and therefore, the demand for thinning has been increasing. In addition, in order to reduce the thickness of the TFT-type LCD, the glass substrate of the main material of the liquid crystal panel of the TFT-type LCD is formed to be thin, so that the entire thickness of the TFT-type LCD can be reduced.

以謀求用在液晶面板之玻璃基板之薄型化 的方法而言,一般係進行一種將液晶面板整體或單面浸漬在氟酸等之研磨液而將玻璃基板表面進行研磨的化學研磨法。 In order to reduce the thickness of the glass substrate used in the liquid crystal panel In the method, a chemical polishing method in which the entire surface of the liquid crystal panel or a single surface is immersed in a polishing liquid such as hydrofluoric acid to polish the surface of the glass substrate is generally used.

然而,在藉由此浸漬進行的化學研磨法中,會有在研磨後的玻璃基板表面產生凹坑(dimple)或反應生成物的情形。 However, in the chemical polishing method by the immersion, there may be a case where dimples or reaction products are formed on the surface of the polished glass substrate.

凹坑係一種在化學研磨後的玻璃基板表面以點狀或行狀出現的凹坑,且為化學研磨前存在於玻璃基板表面之數十μm左右的傷痕或微細孔經化學研磨而擴大後被檢測出為凹陷者。 The pit is a pit which appears in a dot shape or a row on the surface of the glass substrate after the chemical polishing, and is a flaw or a micropore which is present on the surface of the glass substrate before chemical polishing and is enlarged by chemical polishing to be detected. Out of the hollow.

此外,反應生成物係玻璃基板材料中所含成分與化學研磨液反應者、或溶於化學研磨液的成分,此即固著於玻璃表面。 Further, the component contained in the glass substrate material of the reaction product is reacted with the chemical polishing liquid or the component dissolved in the chemical polishing liquid, which is fixed to the surface of the glass.

再者,在使用此種產生有凹坑、或固著有反應生成物的液晶面板來製造TFT型LCD時,會有產生起因於凹坑之被稱為亮點的顯示不良、或因反應生成物固著而使膜特性降低所導致的顯示不良或觸控面板(touch panel)之缺失等的情形。 In addition, when a TFT-type LCD is manufactured using such a liquid crystal panel in which pits are formed or a reaction product is fixed, a display defect called a bright spot due to a pit or a reaction product is generated. Fixation causes deterioration in film properties, display failure, or loss of touch panel.

至今為止,做為消除該凹坑的方法,已知有一種為了預先消滅成為凹坑原因的傷痕或微細孔,對於化學研磨前的玻璃基板表面施以機械研磨的方法(請參照例如專利文獻1)。 Heretofore, as a method of eliminating the pits, a method of mechanically polishing the surface of the glass substrate before chemical polishing in order to eliminate scratches or fine pores which are caused by pits is known (refer to, for example, Patent Document 1) ).

然而,該方法僅係以抑制凹坑為目的,並非以抑制因為化學研磨所產生之反應生成物的固著為目 的,因此無法解決因為反應生成物所引起的顯示不良或甚至觸控面板的缺失。 However, this method is only for the purpose of suppressing pits, and is not intended to suppress the fixation of the reaction product due to chemical polishing. Therefore, it is impossible to solve the display failure caused by the reaction product or even the lack of the touch panel.

另一方面,液晶面板目前係將一般以G(generation,代)所表示之規格之G5(1200mm×1000mm)左右之大型尺寸的液晶面板切斷,而作成最終製品的畫面尺寸。 On the other hand, the liquid crystal panel is generally cut into a large-sized liquid crystal panel of about G5 (1200 mm × 1000 mm) of the specification indicated by G (generation), and the screen size of the final product is created.

在此現狀下,於製造現場中處理大型液晶面板時,會產生液晶面板側面的碎片、或液晶面板本身的破損。再者,此等液晶面板的碎片或破損會招致良率降低,成為製造成本上升的原因。 In this case, when a large liquid crystal panel is processed at a manufacturing site, debris on the side surface of the liquid crystal panel or damage of the liquid crystal panel itself occurs. Furthermore, the chipping or breakage of such a liquid crystal panel causes a decrease in yield, which causes a rise in manufacturing cost.

另外,在以往液晶面板的製造現場,並未考慮處理該等G5左右之大型液晶面板時產生碎片或破損的對策。 In addition, in the conventional manufacturing site of a liquid crystal panel, measures for causing chipping or breakage when handling such a large liquid crystal panel of about G5 are not considered.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本特開2003-15111號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-15111

有鑑於上述背景,為了解決習知的問題,本發明之目的在提供一種可降低大型液晶面板的碎片或破損的產生,進而大幅抑制伴隨著凹坑的產生、以及反應生成物的固著導致顯示不良等之缺失的液晶面板研磨方法。 In view of the above circumstances, in order to solve the conventional problems, an object of the present invention is to provide a method for reducing the occurrence of chipping or breakage of a large liquid crystal panel, and to greatly suppress the occurrence of pits and the fixation of the reaction product. A method of polishing a liquid crystal panel with a defect or the like.

亦即,本發明之液晶面板研磨方法之特徵 如下。 That is, the characteristics of the liquid crystal panel polishing method of the present invention as follows.

第1,一種液晶面板研磨方法,其係具有對於液晶面板表面施行化學研磨之化學研磨步驟者,該液晶面板係在形成有TFT層的第1玻璃基板與形成有濾色器層的第2玻璃基板之間夾著液晶構件而成,該液晶面板研磨方法係具有下列步驟:倒角步驟,在前述化學研磨步驟之前,進行前述液晶面板之前述第1及第2玻璃基板的倒角;第1玻璃基板機械研磨步驟,進行前述第1玻璃基板的機械研磨,以使前述化學研磨步驟後之前述第1玻璃基板表面所存在之凹坑的平均直徑成為200μm以下;第1殘渣處理步驟,將前述液晶面板表面的殘渣予以去除;及反應生成物去除步驟,在前述化學研磨步驟後,將在化學研磨步驟中所產生的反應生成物予以去除。 First, a liquid crystal panel polishing method includes a chemical polishing step of performing chemical polishing on a surface of a liquid crystal panel, wherein the liquid crystal panel is a first glass substrate on which a TFT layer is formed and a second glass on which a color filter layer is formed. a liquid crystal member is interposed between the substrates, and the liquid crystal panel polishing method has the following steps: a chamfering step of performing chamfering of the first and second glass substrates of the liquid crystal panel before the chemical polishing step; In the glass substrate mechanical polishing step, the first glass substrate is mechanically polished so that the average diameter of the pits existing on the surface of the first glass substrate after the chemical polishing step is 200 μm or less; and the first residue processing step is as described above. The residue on the surface of the liquid crystal panel is removed; and the reaction product removal step is performed, and after the chemical polishing step, the reaction product generated in the chemical polishing step is removed.

第2,在上述第1液晶面板研磨方法中,具有:第2玻璃基板機械研磨步驟,進行前述第2玻璃基板的機械研磨,以使前述化學研磨步驟後之前述第2玻璃基板表面所存在之凹坑的平均直徑成為50μm以下;及第2殘渣處理步驟,將前述液晶面板表面的殘渣、及在前述化學研磨步驟中所產生的反應生成物予以去除。 Secondly, in the first liquid crystal panel polishing method, the second glass substrate mechanical polishing step is performed to mechanically polish the second glass substrate so that the surface of the second glass substrate after the chemical polishing step is present The average diameter of the pits is 50 μm or less; and the second residue treatment step removes the residue on the surface of the liquid crystal panel and the reaction product generated in the chemical polishing step.

依據上述第1發明,係藉由在化學研磨步驟之前,設置進行液晶面板之前述第1及第2玻璃基板之倒角的倒角步驟、進行第1玻璃基板之機械研磨以使化學研磨步驟後之前述第1玻璃基板表面所存在之凹坑的平均直 徑成為200μm以下的第1玻璃基板機械研磨步驟、及將液晶面板表面的殘渣予以去除的第1殘渣處理步驟,且於化學研磨步驟後,設置反應生成物去除步驟,而可提供一種降低大型液晶面板的碎片或破損的產生,且大幅抑制伴隨著凹坑產生所導致的顯示不良,且藉由化學研磨步驟而可將固著於液晶面板表面的反應生成物予以去除的液晶面板研磨方法。 According to the first aspect of the invention, the chamfering step of performing chamfering of the first and second glass substrates of the liquid crystal panel is performed before the chemical polishing step, and mechanical polishing of the first glass substrate is performed to cause the chemical polishing step. The average of the pits present on the surface of the first glass substrate The first glass substrate mechanical polishing step having a diameter of 200 μm or less and the first residue treatment step for removing the residue on the surface of the liquid crystal panel, and after the chemical polishing step, a reaction product removing step is provided to provide a reduction in large liquid crystal A liquid crystal panel polishing method in which a reaction product adhering to the surface of the liquid crystal panel can be removed by a chemical polishing step by suppressing occurrence of chipping or breakage of the panel and greatly suppressing display defects caused by the occurrence of pits.

依據上述第2發明,係藉由設置進行前述第2玻璃基板的機械研磨以使化學研磨步驟後之第2玻璃基板所存在凹坑的平均直徑成為50μm以下的第2玻璃基板機械研磨步驟、及將前述液晶面板表面的殘渣、及在化學研磨步驟中所產生的反應生成物予以去除的第2殘渣處理步驟,而可提供一種除上述第1發明之效果外,更進一步大幅抑制伴隨凹坑之產生所導致之顯示不良的液晶面板研磨方法。 According to the second aspect of the invention, the second glass substrate mechanical polishing step of the second glass substrate after the chemical polishing step is 50 μm or less, and the mechanical polishing of the second glass substrate is performed. The second residue treatment step of removing the residue on the surface of the liquid crystal panel and the reaction product generated in the chemical polishing step can provide an effect of the first invention in addition to the effect of the first invention. A liquid crystal panel polishing method which causes display failure.

1‧‧‧第1玻璃基板 1‧‧‧1st glass substrate

2‧‧‧第2玻璃基板 2‧‧‧2nd glass substrate

3‧‧‧液晶構件 3‧‧‧Liquid crystal components

4‧‧‧密封材 4‧‧‧ Sealing material

11‧‧‧TFT層 11‧‧‧TFT layer

12‧‧‧表面 12‧‧‧ surface

21‧‧‧CF層 21‧‧‧CF layer

22‧‧‧表面 22‧‧‧ Surface

31‧‧‧間隔物 31‧‧‧ spacers

S1‧‧‧倒角步驟 S1‧‧‧Chamfering step

S2‧‧‧第1玻璃基板機械研磨步驟 S2‧‧‧First Glass Substrate Mechanical Grinding Step

S3‧‧‧第1殘渣處理步驟 S3‧‧‧1st residue treatment step

S4‧‧‧化學研磨步驟 S4‧‧‧ chemical grinding step

S5‧‧‧反應生成物去除步驟 S5‧‧‧Reaction product removal step

S6‧‧‧第2玻璃基板機械研磨步驟 S6‧‧‧2nd glass substrate mechanical grinding step

S7‧‧‧第2殘渣處理步驟 S7‧‧‧Second residue treatment steps

第1圖係為顯示液晶面板之構成的概略剖面圖。 Fig. 1 is a schematic cross-sectional view showing the configuration of a liquid crystal panel.

第2圖係為顯示本發明之液晶面板研磨方法之一實施形態的流程圖。 Fig. 2 is a flow chart showing an embodiment of a method for polishing a liquid crystal panel of the present invention.

第3圖係為顯示本發明之液晶面板研磨方法之另一實施形態的流程圖。 Fig. 3 is a flow chart showing another embodiment of the liquid crystal panel polishing method of the present invention.

第4圖(a)係為顯示從上面觀看之轉角部之研磨形狀的概略圖,第4圖(b)係為顯示從側面觀看之側面部之研磨形 態的概略圖。 Fig. 4(a) is a schematic view showing a polishing shape of a corner portion viewed from above, and Fig. 4(b) is a view showing a grinding shape of a side surface viewed from the side. An overview of the state.

本發明之液晶面板研磨方法係進行第1圖所示之構成之液晶面板表面之研磨的液晶面板研磨方法。 The liquid crystal panel polishing method of the present invention is a liquid crystal panel polishing method for polishing the surface of the liquid crystal panel having the configuration shown in Fig. 1.

該液晶面板係形成為藉由第1玻璃基板1及第2玻璃基板2夾著液晶構件3及間隔物31,並藉由密封材4將緣部密封的構成。 In the liquid crystal panel, the liquid crystal member 3 and the spacer 31 are sandwiched between the first glass substrate 1 and the second glass substrate 2, and the edge portion is sealed by the sealing member 4.

第1玻璃基板1係在液晶構件3側形成有TFT層11,此外,第2玻璃基板2係在液晶構件3側形成有CF層21。 The first glass substrate 1 has a TFT layer 11 formed on the liquid crystal member 3 side, and the second glass substrate 2 has a CF layer 21 formed on the liquid crystal member 3 side.

本發明之液晶面板研磨方法係關於將液晶面板的表面,亦即將玻璃基板之未形成有TFT層11、CF層21的表面12、22側進行研磨的方法。 The liquid crystal panel polishing method of the present invention relates to a method of polishing the surface of the liquid crystal panel, that is, the surface of the glass substrate 11 on which the TFT layer 11 and the CF layer 21 are not formed.

以下使用流程圖來詳細說明本發明的液晶面板研磨方法。第2圖係顯示本發明之液晶面板研磨方法之一實施形態的流程圖。 The liquid crystal panel polishing method of the present invention will be described in detail below using a flowchart. Fig. 2 is a flow chart showing an embodiment of a method for polishing a liquid crystal panel of the present invention.

在本實施形態的液晶面板研磨方法中,係具有倒角步驟(S1)、第1玻璃基板機械研磨步驟(S2)、第1殘渣處理步驟(S3)、化學研磨步驟(S4)、及反應生成物去除步驟(S5)的步驟。 In the liquid crystal panel polishing method of the present embodiment, the chamfering step (S1), the first glass substrate mechanical polishing step (S2), the first residue processing step (S3), the chemical polishing step (S4), and the reaction generation are performed. The step of removing the step (S5).

可適宜與本發明之液晶面板研磨方法對應之液晶面板的尺寸,一般係以G所表示之規格之被認為大型液晶面板之G5(1200mm×1000mm)左右的尺寸者。 The size of the liquid crystal panel which is suitable for the liquid crystal panel polishing method of the present invention is generally about the size of G5 (1200 mm × 1000 mm) of a large liquid crystal panel which is expressed by G.

在G5左右尺寸的液晶面板中,通常極難以 抑制伴隨著凹坑的產生或反應生成物的附著所導致的顯示不良等,而且,伴隨著在研磨步驟等中產生碎片或破裂所導致的損害會較大。 In the LCD panel of the G5 size, it is usually very difficult The display failure or the like due to the generation of pits or the adhesion of the reaction product is suppressed, and the damage caused by the occurrence of chips or cracks in the polishing step or the like is large.

因此,以下所說明之本發明之液晶面板研磨方法之從倒角步驟(S1)至反應生成物去除步驟(S5)的一連串步驟極為重要,藉由該等步驟即能夠以較佳良率製造高品質的液晶面板。 Therefore, the series of steps from the chamfering step (S1) to the reaction product removing step (S5) of the liquid crystal panel polishing method of the present invention described below is extremely important, and by these steps, high quality can be produced with better yield. LCD panel.

<倒角步驟(S1)> <Chamfering step (S1)>

在本發明之液晶面板研磨方法中,首先,係藉由倒角步驟(S1)進行液晶面板之轉角部及側面部之邊緣(edge)部的倒角。 In the liquid crystal panel polishing method of the present invention, first, the chamfering of the corner portions of the corner portion and the side surface portion of the liquid crystal panel is performed by the chamfering step (S1).

以倒角的條件而言,只要是對於最終製品之LCD的功能不會造成影響的範圍,則並未特別限制,藉由設於液晶面板之搬運路徑之中間部的研磨裝置,即可進行液晶面板之轉角部及邊緣部的研磨。 The chamfering condition is not particularly limited as long as it does not affect the function of the LCD of the final product, and liquid crystal can be performed by a polishing device provided in the middle portion of the conveyance path of the liquid crystal panel. Grinding of the corner and edge of the panel.

轉角部的研磨係例如可使用鑽石粒度#300至600之金屬結合劑(metalbond)的旋轉磨石,以第4圖(a)所示的切割形狀進行成為1C至5C或1R至5R(C及R係依照日本工業基準JISB001:2010)。 The grinding of the corner portion can be performed, for example, by using a rotating diamond of a metal bond of diamond size #300 to 600, and forming a shape of 1C to 5C or 1R to 5R in the cut shape shown in Fig. 4(a). R is in accordance with the Japanese Industrial Standard JISB001:2010).

此外,側面部的倒角係例如可使用鑽石粒度#300至600之金屬結合劑的旋轉磨石,以第4圖(b)所示的切割形狀進行成為倒角寬度0.1mm以上、面形狀C或R(C及R係依照日本工業基準JISB001:2010)。 Further, the chamfering of the side surface portion can be, for example, a rotating grindstone of a metal bond of diamond size #300 to 600, and a chamfer width of 0.1 mm or more and a face shape C can be obtained in the cut shape shown in Fig. 4(b). Or R (C and R are in accordance with Japanese Industrial Standard JISB001:2010).

上述之轉角部及側面部的研磨,雖係一面 搬運液晶面板一面藉由研磨裝置來進行,但搬運條件及研磨裝置的運轉條件,係可依照導入之液晶面板之尺寸或材質等而分別適當設定。 The grinding of the corner portion and the side portion described above is one side The liquid crystal panel is transported by a polishing apparatus, but the transport conditions and the operating conditions of the polishing apparatus can be appropriately set in accordance with the size, material, and the like of the liquid crystal panel to be introduced.

以上述條件進行液晶面板的倒角,藉此即可跳躍性地提升轉角部及側面部相對於機械性撞擊的強度,而可大幅降低在之後的各步驟中液晶面板的碎片或破損。 By chamfering the liquid crystal panel under the above conditions, the strength of the corner portion and the side portion with respect to the mechanical impact can be jumped off, and the chipping or breakage of the liquid crystal panel in the subsequent steps can be greatly reduced.

此外,在此倒角步驟中,藉由倒角後的洗淨乾燥步驟將研磨玻璃粉或玻璃基板表面的污垢予以洗淨去除,並進行乾燥。 Further, in this chamfering step, the dirt on the surface of the ground glass frit or the glass substrate is washed and removed by a washing and drying step after chamfering, and dried.

以洗淨、乾燥的條件而言,只要是可去除研磨玻璃粉或玻璃基板表面之污垢的條件則無特別限制,但洗淨係例如可一面搬運液晶面板一面將液晶面板的上下面,使用材質為尼龍等的圓盤刷(diskbrush)、與材質為尼龍等的滾筒刷(roll brush)並藉由水來進行。 The conditions for washing and drying are not particularly limited as long as the conditions for removing the stain on the surface of the glass frit or the glass substrate are removed. However, the cleaning can be performed by, for example, transporting the liquid crystal panel to the upper and lower surfaces of the liquid crystal panel. It is made up of a disk brush such as nylon or a roll brush made of nylon or the like and water.

此外,乾燥係例如可使用材質為PVA(Polyvinyl Alcohol,聚乙烯醇)海綿(sponge)等的脫水滾筒、及氣刀(air knife)、溫風乾燥機等來進行。 Further, the drying system can be carried out, for example, by using a dewatering drum made of PVA (Polyvinyl Alcohol) or the like, an air knife, a warm air dryer, or the like.

<第1玻璃基板機械研磨步驟(S2)> <First Glass Substrate Mechanical Polishing Step (S2)>

接著進行將形成有TFT層之第1玻璃基板表面進行機械研磨的第1玻璃基板機械研磨步驟(S2)。 Next, a first glass substrate mechanical polishing step (S2) of mechanically polishing the surface of the first glass substrate on which the TFT layer is formed is performed.

在第1玻璃基板機械研磨步驟(S2)中所使用的研磨機,係可適宜使用利用研磨墊(pad)及研磨材進行研磨之一般公知的自動機械研磨機,例如,可使用材質為發 泡聚胺酯(polyurethane)等的研磨墊、及材質為氧化鈰(celium)等的研磨材來進行。 In the polishing machine used in the first glass substrate mechanical polishing step (S2), a generally known automatic mechanical polishing machine using a polishing pad and a polishing material can be suitably used. For example, a material can be used. A polishing pad such as a polyurethane or a polishing material such as celite is used.

藉由在後述的化學研磨步驟(S4)之前進行第1玻璃基板機械研磨步驟(S2),預先將形成有TFT層之第1玻璃基板表面的傷痕或微細孔削除,即可藉此將化學研磨步驟後之第1玻璃基板表面所存在之凹坑的平均直徑抑制為200μm以下,較佳為50μm以下。另外,本發明之凹坑的平均直徑係指凹坑的直徑。 By performing the first glass substrate mechanical polishing step (S2) before the chemical polishing step (S4) to be described later, the scratches or fine pores on the surface of the first glass substrate on which the TFT layer is formed are removed in advance, whereby chemical polishing can be performed. The average diameter of the pits present on the surface of the first glass substrate after the step is suppressed to 200 μm or less, preferably 50 μm or less. Further, the average diameter of the pit of the present invention means the diameter of the pit.

在本發明之液晶面板研磨方法的第1玻璃基板機械研磨步驟中,將形成有TFT層的第1玻璃基板表面進行研磨的理由,係因為伴隨著凹坑之產生所導致的顯示不良,大多為來自於形成有TFT層之第1玻璃基板表面所產生之凹坑之故。 In the first glass substrate mechanical polishing step of the liquid crystal panel polishing method of the present invention, the reason why the surface of the first glass substrate on which the TFT layer is formed is polished is due to display failure due to the occurrence of pits. It is derived from the pits generated on the surface of the first glass substrate on which the TFT layer is formed.

此係因為考慮到形成有TFT層的第1玻璃基板成為背光源(backlight)側,因此例如形成有TFT層之第1玻璃基板表面的凹坑發揮凹透鏡作用,而在此漫反射來自背光源的光並擴散,而成為亮點等之顯示不良的情形。 In this case, since the first glass substrate on which the TFT layer is formed is considered to be a backlight side, for example, the pits on the surface of the first glass substrate on which the TFT layer is formed function as a concave lens, and the diffuse reflection from the backlight is performed here. The light spreads and becomes a bad display such as a bright spot.

因此,本發明中將形成有TFT層之第1玻璃基板表面進行機械研磨的第1玻璃基板機械研磨步驟(S2)係特別重要的步驟。 Therefore, in the present invention, the first glass substrate mechanical polishing step (S2) in which the surface of the first glass substrate on which the TFT layer is formed is mechanically polished is a particularly important step.

<第1殘渣處理步驟(S3)> <First residue processing step (S3)>

在本發明的液晶面板研磨方法中,係在第1玻璃基板機械研磨步驟(S2)後,接著進行第1殘渣處理步驟(S3)。 In the liquid crystal panel polishing method of the present invention, after the first glass substrate mechanical polishing step (S2), the first residue processing step (S3) is performed.

此第1殘渣處理步驟(S3)係由用以將研磨後 的研磨玻璃粉或研磨材去除、及防止第2玻璃基板表面所產生之研磨材之固著的洗刷(scrub)處理、及洗淨、乾燥處理所構成的步驟。 This first residue treatment step (S3) is used to The steps of removing the polishing glass powder or the polishing material, and preventing the scrubbing treatment of the polishing material generated on the surface of the second glass substrate, and the washing and drying treatment.

洗刷處理的條件只要可去除研磨玻璃粉或研磨材則無特別限制,例如,液晶面板的上下面,可利用碳酸鈣或氧化鈰等做為研磨材,而使用材質為PVA等的圓盤海綿(disk sponge)來進行洗刷處理。 The conditions of the washing treatment are not particularly limited as long as the ground glass powder or the abrasive material can be removed. For example, in the upper and lower surfaces of the liquid crystal panel, calcium carbonate or cerium oxide can be used as the abrasive material, and a disc sponge made of PVA or the like can be used. Disk sponge) for washing.

此外,洗淨係可例如使用材質為尼龍等的滾筒刷並藉由水來進行。 Further, the washing system can be carried out, for example, by using a roller brush made of nylon or the like and water.

此外,乾燥係例如可使用材質為PVA海綿等的脫水滾筒、及氣刀、溫風乾燥機等來進行。 Further, the drying system can be carried out, for example, using a dewatering drum made of a PVA sponge or the like, an air knife, a warm air dryer, or the like.

藉由進行該第1殘渣處理步驟(S3),即可作成在液晶面板之TFT側表面,不會有成為凹坑之原因的傷痕或微細孔、及伴隨著研磨所導致之殘渣之潔淨的液晶面板。 By performing the first residue treatment step (S3), it is possible to form a liquid crystal which is free from scratches or fine pores which are caused by pits on the TFT side surface of the liquid crystal panel, and which is cleaned by residue due to polishing. panel.

<化學研磨步驟(S4)> <Chemical Grinding Step (S4)>

接著進行化學研磨步驟(S4)。該化學研磨步驟(S4)係可藉由一般為了將液晶面板薄化所進行的化學研磨法來進行。 Next, a chemical polishing step (S4) is performed. This chemical polishing step (S4) can be carried out by a chemical polishing method generally performed to thin the liquid crystal panel.

在此化學研磨方法中,將液晶面板整體浸漬於研磨液中,來進行第1及第2玻璃基板表面的研磨。以研磨液而言,可舉例如通常在化學研磨中所使用的氟酸等,而研磨條件係可考慮最終之液晶面板的厚度來適當設定。 In this chemical polishing method, the entire liquid crystal panel is immersed in a polishing liquid to polish the surfaces of the first and second glass substrates. The polishing liquid may, for example, be hydrofluoric acid or the like which is usually used in chemical polishing, and the polishing conditions may be appropriately set in consideration of the thickness of the final liquid crystal panel.

此外,化學研磨後係進行以去除研磨液為目的的洗淨及乾燥步驟。 Further, after chemical polishing, a washing and drying step for removing the polishing liquid is performed.

<反應生成物去除步驟(S5)> <Reaction product removal step (S5)>

接著,在本發明之液晶面板的研磨方法中,以將在化學研磨步驟(S4)中所產生而固著的反應生成物予以去除為目的而進行反應生成物去除步驟(S5)。 Next, in the polishing method of the liquid crystal panel of the present invention, the reaction product removal step (S5) is carried out for the purpose of removing the reaction product which is generated by the chemical polishing step (S4).

化學研磨步驟中所產生的反應生成物,通常係化學研磨中做為研磨液使用的氟酸與被研磨液所研磨之液晶面板的材料成分反應而生成的物質。 The reaction product produced in the chemical polishing step is usually a substance produced by reacting hydrofluoric acid used as a polishing liquid in chemical polishing with a material component of a liquid crystal panel polished by the polishing liquid.

成為反應生成物之原因之液晶面板的材料成分,除玻璃組成中所含之Al、Ca、Mg、Sr等之物質外,尚有液晶面板之緣部的密封材或基板、玻璃與基板之間的黏接劑成分等,以具體的反應生成物而言,例如有氟化鋁(AlF3)、氟化鎂(MgF2)、氟化鈣(CaF2)、氟化矽(SiF4)等的無機氟化物、或無機、有機複合物等。此外,亦包含溶解於研磨液之矽(Si)等再固著於玻璃基板上者。 The material component of the liquid crystal panel which is a cause of the reaction product is a material such as Al, Ca, Mg, or Sr contained in the glass composition, and a sealing material or a substrate at the edge of the liquid crystal panel, and between the glass and the substrate. Examples of the binder component, etc., specific examples of the reaction product include aluminum fluoride (AlF 3 ), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), cesium fluoride (SiF 4 ), and the like. Inorganic fluorides, or inorganic, organic complexes, and the like. In addition, it is also included in the polishing liquid, such as bismuth (Si), which is fixed on the glass substrate.

該等固著於玻璃基板表面的反應生成物係成為顯示不良或觸控面板之缺失的原因者。 These reaction products adhered to the surface of the glass substrate are responsible for display failure or loss of the touch panel.

該反應生成物去除步驟(S5)係對於第1玻璃基板及第2玻璃基板的兩表面進行者。 This reaction product removal step (S5) is performed on both surfaces of the first glass substrate and the second glass substrate.

以反應生成物去除步驟(S5)的條件而言,只要可完全去除反應生成物則無特別限制,但洗刷處理係例如可使用碳酸鈣或氧化鈰等做為研磨材、及使用材質為PVA等的圓盤海綿來進行。 The condition of the reaction product removal step (S5) is not particularly limited as long as the reaction product can be completely removed. However, for the scrubbing treatment, for example, calcium carbonate or cerium oxide can be used as the polishing material, and the material is PVA or the like. The disc sponge is coming.

此外,洗淨係例如可使用材質為尼龍等的滾筒刷並藉由水來進行。 Further, the washing system can be carried out, for example, by using a roller brush made of nylon or the like and using water.

此外,乾燥係例如可使用材質為PVA海綿等的脫水滾筒、及氣刀、溫風乾燥機等來進行。 Further, the drying system can be carried out, for example, using a dewatering drum made of a PVA sponge or the like, an air knife, a warm air dryer, or the like.

藉由進行此反應生成物去除步驟(S5),即可製造液晶面板整體無凹坑之潔淨的液晶面板。 By performing this reaction product removing step (S5), it is possible to manufacture a clean liquid crystal panel having no pits as a whole in the liquid crystal panel.

接著使用第3圖的流程圖來詳細說明本發明之液晶面板研磨方法的另一實施形態。 Next, another embodiment of the liquid crystal panel polishing method of the present invention will be described in detail using the flowchart of Fig. 3.

在本實施形態的液晶面板研磨方法中係具有:倒角步驟(S1)、第1玻璃基板機械研磨步驟(S2)、第1殘渣處理步驟(S3)、化學研磨步驟(S4)、第2玻璃基板機械研磨步驟(S6)、及第2殘渣處理步驟(S7)。 In the liquid crystal panel polishing method of the present embodiment, the chamfering step (S1), the first glass substrate mechanical polishing step (S2), the first residue processing step (S3), the chemical polishing step (S4), and the second glass are provided. The substrate mechanical polishing step (S6) and the second residue processing step (S7).

在本實施形態中,從倒角步驟(S1)至化學研磨步驟(S4)的各步驟,係與先前所說明之第2圖所示之實施形態之從倒角步驟(S1)至化學研磨步驟(S4)的步驟為相同步驟,故省略其說明。 In the present embodiment, each step from the chamfering step (S1) to the chemical polishing step (S4) is performed from the chamfering step (S1) to the chemical polishing step in the embodiment shown in Fig. 2 described earlier. The steps of (S4) are the same steps, and the description thereof will be omitted.

<第2玻璃基板機械研磨步驟(S6)> <Second Glass Substrate Mechanical Polishing Step (S6)>

在本發明的液晶面板研磨方法中,係以去除有可能在形成有液晶面板之CF層之第2玻璃基板表面產生之凹坑為目的而可進行第2玻璃基板機械研磨步驟(S6)。 In the liquid crystal panel polishing method of the present invention, the second glass substrate mechanical polishing step (S6) can be performed for the purpose of removing pits which may occur on the surface of the second glass substrate on which the CF layer of the liquid crystal panel is formed.

在此第2玻璃基板機械研磨步驟(S6)中,可適宜使用與在第1玻璃基板機械研磨步驟(S2)中所使用之研磨機相同的自動機械研磨機來進行。以研磨條件而言,例如可使用材質為發泡聚胺酯等的研磨墊、及材質為氧化 鈰等的研磨材來進行。 In the second glass substrate mechanical polishing step (S6), the same automatic mechanical polishing machine as that used in the first glass substrate mechanical polishing step (S2) can be suitably used. In terms of polishing conditions, for example, a polishing pad made of foamed polyurethane or the like can be used, and the material is oxidized. Grinding materials such as enamel are used.

如上所述,藉由在化學研磨步驟(S4)之後進行第2玻璃基板機械研磨步驟(S6),即可將化學研磨步驟後之第2玻璃基板表面所存在之凹坑的平均直徑抑制在50μm以下,較佳為30μm以下。 As described above, by performing the second glass substrate mechanical polishing step (S6) after the chemical polishing step (S4), the average diameter of the pits existing on the surface of the second glass substrate after the chemical polishing step can be suppressed to 50 μm. Hereinafter, it is preferably 30 μm or less.

<第2殘渣處理步驟(S7)> <Second residue processing step (S7)>

在本發明之液晶面板研磨方法中,係在第2玻璃基板機械研磨步驟(S6)之後,接著進行第2殘渣處理步驟(S7)。 In the liquid crystal panel polishing method of the present invention, after the second glass substrate mechanical polishing step (S6), the second residue processing step (S7) is performed.

此第2殘渣處理步驟(S7)係包括以去除因為第2玻璃基板機械研磨步驟(S6)所產生之研磨後之研磨玻璃粉或研磨材,並且去除在化學研磨步驟(S4)中所產生而固著之反應生成物為目的之反應生成物去除步驟的步驟,且為由洗刷處理、及洗淨、乾燥處理所構成的步驟。 The second residue treatment step (S7) includes removing the ground glass frit or the abrasive material after the polishing by the second glass substrate mechanical polishing step (S6), and removing the generated in the chemical polishing step (S4). The step of removing the reaction product for the purpose of the reaction product to be fixed, and the step of the step of washing, washing, and drying.

此第2殘渣處理步驟(S7)係對於第1玻璃基板及第2玻璃基板的兩表面所進行者。 This second residue treatment step (S7) is performed on both surfaces of the first glass substrate and the second glass substrate.

洗刷處理只要可去除研磨玻璃粉、研磨材及反應生成物則無特別限制,例如可使用碳酸鈣或氧化鈰做為研磨材,且使用材質為PVA等的圓盤海綿來進行。 The washing treatment is not particularly limited as long as the ground glass frit, the polishing material, and the reaction product can be removed. For example, calcium carbonate or cerium oxide can be used as the polishing material, and a disc sponge made of PVA or the like can be used.

此外,洗淨係例如可使用材質為尼龍等的滾筒刷並藉由水來進行。 Further, the washing system can be carried out, for example, by using a roller brush made of nylon or the like and using water.

此外,乾燥係例如可使用材質為PVA海綿等的脫水滾筒、及氣刀、溫風乾燥機等來進行。 Further, the drying system can be carried out, for example, using a dewatering drum made of a PVA sponge or the like, an air knife, a warm air dryer, or the like.

藉由進行此第2殘渣處理步驟(S7),即可去除研磨玻璃粉、研磨材及反應生成物,而可製造液晶面板 表面無殘渣之潔淨的液晶面板。 By performing the second residue treatment step (S7), the ground glass frit, the abrasive, and the reaction product can be removed, and the liquid crystal panel can be manufactured. A clean liquid crystal panel with no residue on the surface.

綜上雖已根據實施形態說明了本發明之液晶面板研磨方法,但本發明並不限定於上述實施形態,在不脫離其要旨之範圍內可進行各種變更。 In the above, the liquid crystal panel polishing method of the present invention has been described with reference to the embodiments, but the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention.

例如,在上述實施形態中,於第1玻璃基板機械研磨步驟(S2)中,雖僅將形成有TFT層的第1玻璃基板表面進行了機械研磨,但在此步驟中,也可將形成有TFT層的第1玻璃基板表面與形成有CF層的第2玻璃基板表面同時進行、或單面各分別進行機械研磨。 For example, in the above-described embodiment, in the first glass substrate mechanical polishing step (S2), only the surface of the first glass substrate on which the TFT layer is formed is mechanically polished, but in this step, it may be formed. The surface of the first glass substrate of the TFT layer is simultaneously or separately mechanically polished on the surface of the second glass substrate on which the CF layer is formed.

例如,藉由在化學研磨步驟(S4)之後進行倒角步驟(S1),可提升因為化學研磨步驟(S4)而受損之液晶面板的轉角部及側面部的強度。 For example, by performing the chamfering step (S1) after the chemical polishing step (S4), the strength of the corner portion and the side portion of the liquid crystal panel damaged by the chemical polishing step (S4) can be improved.

此外,在上述實施形態中,雖已說明了將可適宜對應於本發明之液晶面板研磨方法的液晶面板設為G5(1200mm×1000mm)左右的尺寸,但當然也可對應G5以下的面板尺寸(G1(400mm×300mm)至G4.5(920mm×730mm)者,此外,亦可對應於G5.5(1500mm×1300mm)以上的尺寸。 Further, in the above-described embodiment, the liquid crystal panel which can be suitably used in the liquid crystal panel polishing method according to the present invention has a size of about G5 (1200 mm × 1000 mm), but it is of course possible to correspond to a panel size of G5 or less ( G1 (400 mm × 300 mm) to G4.5 (920 mm × 730 mm), and may also correspond to a size of G5.5 (1500 mm × 1300 mm) or more.

S1‧‧‧倒角步驟 S1‧‧‧Chamfering step

S2‧‧‧第1玻璃基板機械研磨步驟 S2‧‧‧First Glass Substrate Mechanical Grinding Step

S3‧‧‧第1殘渣處理步驟 S3‧‧‧1st residue treatment step

S4‧‧‧化學研磨步驟 S4‧‧‧ chemical grinding step

S5‧‧‧反應生成物去除步驟 S5‧‧‧Reaction product removal step

Claims (2)

一種液晶面板研磨方法,其係具有對於液晶面板表面施行化學研磨之化學研磨步驟者,該液晶面板係在形成有薄膜電晶體層的第1玻璃基板與形成有濾色器層的第2玻璃基板之間夾著液晶構件而成,該液晶面板研磨方法係具有下列步驟:倒角步驟,在前述化學研磨步驟之前,進行前述液晶面板之前述第1及第2玻璃基板的倒角;第1玻璃基板機械研磨步驟,進行前述第1玻璃基板的機械研磨,以使前述化學研磨步驟後之前述第1玻璃基板表面所存在之凹坑的平均直徑成為200μm以下;第1殘渣處理步驟,將前述液晶面板表面的殘渣予以去除;及反應生成物去除步驟,在前述化學研磨步驟後,將在化學研磨步驟中所產生的反應生成物予以去除。 A liquid crystal panel polishing method comprising a chemical polishing step of performing chemical polishing on a surface of a liquid crystal panel, wherein the liquid crystal panel is a first glass substrate on which a thin film transistor layer is formed and a second glass substrate on which a color filter layer is formed The liquid crystal panel polishing method has the following steps: a chamfering step of performing chamfering of the first and second glass substrates of the liquid crystal panel before the chemical polishing step; first glass In the substrate mechanical polishing step, the first glass substrate is mechanically polished so that the average diameter of the pits existing on the surface of the first glass substrate after the chemical polishing step is 200 μm or less; and the first residue treatment step is performed on the liquid crystal. The residue on the surface of the panel is removed; and the reaction product removal step is performed, after the chemical polishing step, the reaction product generated in the chemical polishing step is removed. 如申請專利範圍第1項所述之液晶面板研磨方法,其係具有:第2玻璃基板機械研磨步驟,進行前述第2玻璃基板的機械研磨,以使前述化學研磨步驟後之前述第2玻璃基板表面所存在之凹坑的平均直徑成為50μm以下;及第2殘渣處理步驟,將前述液晶面板表面的殘渣、及在前述化學研磨步驟中所產生的反應生成物予以去 除。 The liquid crystal panel polishing method according to claim 1, further comprising: a second glass substrate mechanical polishing step of performing mechanical polishing on the second glass substrate to cause the second glass substrate after the chemical polishing step The average diameter of the pits present on the surface is 50 μm or less; and the second residue treatment step removes the residue on the surface of the liquid crystal panel and the reaction product generated in the chemical polishing step. except.
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