WO2007094160A1 - Method and apparatus for chamfering glass substrate - Google Patents

Method and apparatus for chamfering glass substrate Download PDF

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Publication number
WO2007094160A1
WO2007094160A1 PCT/JP2007/051308 JP2007051308W WO2007094160A1 WO 2007094160 A1 WO2007094160 A1 WO 2007094160A1 JP 2007051308 W JP2007051308 W JP 2007051308W WO 2007094160 A1 WO2007094160 A1 WO 2007094160A1
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WO
WIPO (PCT)
Prior art keywords
glass substrate
laser beam
chamfering
end face
glass
Prior art date
Application number
PCT/JP2007/051308
Other languages
French (fr)
Japanese (ja)
Inventor
Yutaka Kuroiwa
Motoichi Iga
Setsuro Ito
Yasuji Fukasawa
Mitsuru Watanabe
Original Assignee
Asahi Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006-038018 priority Critical
Priority to JP2006038018 priority
Application filed by Asahi Glass Company, Limited filed Critical Asahi Glass Company, Limited
Publication of WO2007094160A1 publication Critical patent/WO2007094160A1/en

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/04Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
    • C03B29/06Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way with horizontal displacement of the products
    • C03B29/08Glass sheets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production
    • Y02P40/57Reduction of reject rates; Improving the yield

Abstract

Novel method and apparatus for chamfering a glass substrate are provided for improving productivity by improving bending strength and shock strength of an end plane of the glass substrate and by preventing breakage and chipping of the glass substrate in a glass substrate manufacturing process. In the method and apparatus for chamfering the glass substrate by using laser beams, the end plane of the glass substrate is irradiated with the laser beams, and a cooling gas is blown to the laser beam irradiation area on the glass substrate.

Description

Specification

Chamfering method and apparatus for a glass substrate

Technical field

[0001] The present invention includes a glass substrate and a glass substrate for a display, particularly to chamfering method and equipment of the glass substrate used as a glass substrate or photomask flat panel Day scan play.

BACKGROUND

[0002] The current, a glass substrate for a display, in particular a liquid crystal display, plasma display Rei, an organic EL display, a glass substrate or for field flat panel display, such as E mission display, housing, window glass of buildings of a building or the like, also automobile, train, airplane, ship or the like, a window glass of a vehicle, such as transportation, a glass substrate is used as a so many areas of the opening member. Such glass substrates, float method, is molded from a molten glass by using a fusion method or a down-draw method. Also obtained by redrawing processing glass plate that is primary molding.

[0003] Particularly in the manufacturing process of flat panel displays, or send transportable these glass substrates, when positioning, to chipping or Ri broken from the edge of the glass substrate becomes a problem due to impact or mechanical external force there. For example, when placing a glass substrate in the manufacturing apparatus, the impact is chipped to Rukoto force s crack the glass substrate when pressed against the pin for alignment.

[0004] In order to solve the above problems has been to improve the bending strength and chamfered end faces of the glass substrate and impact strength. Chamfering of the glass substrate is carried out by grinding round the force ,, facet itself take the corners of the end surface of the glass substrate in general grindstone. In these cases, in order to further improve the bending strength and impact strength of the end face of the glass base plate, it takes a lot of time to it the force which it is desired to polish in a state close to a mirror surface, appropriate count (for example, # 500 ) it is made to end the chamfer up.

[0005] Further, in the method, for performing chamfering by grinding the glass substrate was severely fixed, there is a problem that it takes a very long time force s in Ri chamfer. Further, since the glass substrate is contaminated such as glass powder or abrasive slurry is removed by polishing, need has been made for cleaning carefully.

[0006] As another chamfering process, chamfering method using carbon dioxide (CO) lasers have been proposed

2

That (Patent Documents:! ~ 5). That since this method is rounded by melting the edges of the glass substrate which is cut with a carbon dioxide gas laser, although the non-contact, yet fast is possible chamfering, strong stress remains in the glass substrate around edges which are not described in the patent literature there was a serious problem.

[0007] Examples of the stress, typically in the case of re-cutting the glass substrate with the Nag chamfered simply reducing the edge strength of the case is a multi-tool glass substrate is a tensile stress generated in the longitudinal edges of the glass substrate the progress of the crack is disturbed by this stress, cut line etc. can be cut to your Ri such Rere and records, there was a cormorant problem.

[0008] Patent Chapter 2,612,322 discloses, a method of performing chamfering with laser beam irradiation on the glass substrate heated to just below the softening temperature has been proposed, in this method it is necessary to heat hold the entire glass substrate, now in chamfer large glass substrate of too time consuming for difficult Instrumented, and from heated to annealing. In the chamfering of the glass base plate having Ka卩E the display panel, there is a fear that when heating the entire low heat resistance member being damaged undesirably.

[0009] JP-A-2 48 423, although chamfering method by laser beam irradiation of the glass substrate is disclosed, no description can have also solved how Nag is described at all a problem of residual stress.

[0010] In WO2003 / 015976 discloses performs preheating and heating chamfering the glass substrate by an oval-shaped laser beam, further elliptical laser beam residual stresses do Aniru at reduced to be Rukoto force S according to Les, that. And force, while, is not described whether the residual stress of the glass substrate was actually reduced by this method.

[0011] In Japanese Patent No. 3387645 publication, the electrode forming surface side Etsu di to carbon dioxide laser light of the glass substrate end portion of the liquid crystal panel to remove the short-circuit electrode by irradiating light collecting, by melting the corner of the glass substrate yarn the method of performing chamfering processing at the same time is disclosed. The by force while the how, a method of processing the entire glass substrate edge curved is not described. Further, the problem has not been considered at all for the residual stress, is not shown open also for the solution.

[0012] In Japanese Patent No. 3129153 publication, a method of the glass substrate chamfering after thermal cleaving is disclosed. And force while, in the present method is carried out immediately chamfering performed Netsuwaridan irradiated with a laser beam from the direction on the substrate surface, in the thermal cleaving, until the glass substrate cracks tip reaches the substrate end face separation Shinare ,. Accordingly, the upper surface only can be chamfered be irradiated with a carbon dioxide gas laser beam for chamfering before the substrate separation, and when the result is brought close to the glass of the fracture portion at the melting temperature, fractured again fused it is it is a concern. Les, such can be used for R-chamfering of the glass substrate is other Me, the method. Moreover, not at all considered in also the residual stress problem in the process, it not disclosed for the solution.

[0013] Patent Document 1: Japanese Patent No. 2612322

Patent Document 2: JP-2- 48423 JP

Patent Document 3: W_rei_2003 / 015,976 discloses

Patent Document 4: Japanese Patent No. 3387645

Patent Document 5: Japanese Patent No. 3129153

Disclosure of the Invention

Problems that the Invention is to you'll solve

[0014] The present invention was made in view of the above circumstances, a glass substrate for a glass substrate and displays, bending especially of the end face of the glass substrate used as a glass substrate or a photomask for a flat panel display intensity and with the impact strength is improved, to prevent cracking and chipping of the glass substrate in a flat panel de Isupurei manufacturing process, and an object thereof is to provide a chamfering method and apparatus of a novel glass substrate which can improve productivity .

Means for Solving the Problems

[0015] To accomplish the above object, there is provided a chamfering Ri method for a glass substrate by irradiation with a laser beam, the at least one laser beam irradiated to the end face of the glass substrate and Moni, the glass It provides a chamfering method of glass substrates, which comprises blowing a cooling gas to a laser beam irradiation portion of the substrate. [0016] The present invention, the irradiation angle of the laser beam, the against the vertical end surface of the glass substrate, within 70 ° to the longitudinal direction of the end face, and to be within 70 ° in the direction of plate thickness better good There.

[0017] The present invention has blowing direction of ,, the cooling gas, against the vertical edge of the substrate of the glass, within 70 ° to the longitudinal direction of the end face, good to be within 45 ° in the direction of plate thickness better Les,.

[0018] The present invention is velocity of the cooling gas in the laser beam irradiation unit is preferably a wind velocity lmZ sec ~ 200 meters / sec.

[0019] The present invention, in the end face of the glass substrate, Eneru ghee density distribution maximum l / e 2 of the laser beam irradiation sectional (e is the base of natural logarithms. Hereinafter the same.) Was connected to become part when a longitudinal width of the end face of the glass substrate surface surrounded by the curve W (mm), the relative run 查速 degree between the laser beam and the glass substrate was U (mm / s), W≤ 0. 15 XU + 2 is it is preferred instrument further 0.02≤W≤0. more preferably 15XU + 2

[0020] The present invention, in the end face of the glass substrate, when the average power density is defined by the total wattage / irradiation area of the laser beam irradiation unit section was P (W / mm 2), (0. 5X U + 0. 2) / 0. 7X (0. 15XU + 2) ≤P≤ (10XU + 10) /0.005XUX0. 7 der Rukoto is preferred instrument further (4XU) / 0. 7 / (0 . 15XU + 2) ≤P≤ (10XU + 10) / 0. 005XUX0. and more preferably 7.

[0021] The present invention, before irradiating the laser beam on the end face of the glass substrate, Shi preferred to preheat the end face of the glass substrate les.

[0022] In addition, the rate of Hashi查 the laser beam, to the glass substrate, Shi preferred that a relatively 0. 1-200 mmZ seconds les.

[0023] The wavelength of the laser beam, 3: is preferably 11 mu m.

[0024] In addition, the laser beam, it is preferable to converge in the thickness direction of the end face of the glass substrate to the glass substrate.

[0025] The present invention, in a line for manufacturing the glass substrate by the float process by continuously feeding the molten glass, is suitable when performing the chamfering of the glass substrate continuously. [0026] The present invention includes a mechanism a chamfering device glass substrate to perform chamfering method of a glass substrate of the described irradiation with the laser beam, which at least one laser beam morphism irradiation to the end face of the glass, providing chamfering apparatus for a glass substrate, characterized in that it and a mechanism for blowing a cooling gas into the laser beam irradiation portion of the glass substrate.

Effect of the invention

[0027] According to the method and apparatus of the present invention, a glass substrate and a glass substrate for a display, in particular providing a beveled glass substrate is used as a glass substrate or a photomask for a flat panel display, a flat panel display manufacturing process it is possible to prevent cracking and chipping of the glass board, improving productivity in.

BRIEF DESCRIPTION OF THE DRAWINGS

[0028] FIG. 1 is a schematic perspective view illustrating a chamfering method according to the present invention.

It is a schematic plan view illustrating a chamfering method according to [2] the present invention.

3 is a schematic side view illustrating a chamfering method according to the present invention.

It is a conceptual diagram of an example of FIG. 4 chamfering apparatus for a glass substrate according to the present invention.

DESCRIPTION OF SYMBOLS

[0029] 1: Glass substrate, 2: end face, 3: laser beam, 3C: a laser beam center line, 4: irradiation portion

5: blasting nozzle, 5C: blasting nozzle centerline, 6: cooling gas, 7: laser beam irradiation apparatus, 11: glass substrate for testing

A: with respect to the vertical direction of the end face of the glass substrate, the longitudinal direction irradiation angle of the end face of the laser beam center line

B: thickness how the irradiation angle of direction of the end surface of the laser beam center line with respect to the vertical direction of the end face of the glass substrate

C: longitudinal direction blowing angle of direction of the end surface of the cooling gas centerline with respect to the vertical direction of the end face of the glass substrate

D: thickness how blowing angle of direction of the end surface of the cooling gas centerline with respect to the vertical direction of the end face of the glass substrate

W: at the end face of the glass substrate, the glass substrate surface on which the energy density distribution of the laser beam irradiation unit cross section is enclosed by the connected curved portion having a maximum of LZE 2 of the end face longitudinal width

u: relative scanning speed of the laser beam and the glass substrate

BEST MODE FOR CARRYING OUT THE INVENTION

[0030] with reference to the accompanying drawings, it will be described in detail preferred embodiments of the chamfering method and apparatus for a glass substrate of the present invention.

Glass substrate to be chamfered in [0031] the present invention, a glass substrate and a glass substrate for a display, in particular to be a glass substrate having a thickness of 0 · 0 5 to 7 mm for use as a glass substrate or a photomask for a flat panel display preferable. Particularly preferably, the strain point of a glass substrate for liquid crystal of 610 ° C~690 ° C and softening point 930 ° C~1000 ° C, thickness 0. 05~lmm. In the method of the present invention, if the surface by irradiating the laser beam to a temperature to smooth, glass material constituting the glass substrate is not particularly limited, such les. Te the month, the method of the present invention is applicable to almost all of the glass material.

[0032] end surface of the glass substrate to be chamfered is often put crack of glass force Limiter wheels or diamond, those were fractured with the bending stress it, or cracks were placed in a part of the plate the, in which by using a thermal stress is extended cracks by breaking the glass that occurs when heating the glass substrate at such a carbon dioxide gas laser or a YAG laser and burners. Moreover, those have been conducted under the cut abrasive grains were fixed disk-like blade, such as diamond, that the various cut glass edge grinding by the grinding wheel, the end face of the glass plate during production by the float method or a fusion method itself, or it may be an end surface of the glasses thus processed to pressing.

[0033] FIG. 1 is a schematic perspective view illustrating a chamfering method according to the present invention, FIG. 2 is a schematic plan view illustrating a chamfering method according to the present invention, and FIG. 3 is a schematic side for explaining a chamfering method according to the present invention it is a diagram.

[0034] Figure!, As shown in 1-3, while the laser beam 3 is irradiated at an angle of Jo Tokoro with respect to the vertical direction of the end face 2 of the substrate 1 of glass, the cooling gas 6 from the cooling nozzles 5 into the irradiation unit performing chamfering of the end face 2 of the glass substrate 1 by blowing air. The principle of chamfering by the method are as follows.

[0035] Glass of the end face 2 the vicinity of the glass substrate 1 that has reached the melted by irradiation of the laser beam 3, is immediately cooled by the blowing of the cooling gas 6, de-heat to the outside air from the end face 2 of the glass substrate 1 which has reached the melting increases, the amount of heat conducted to the glass substrate 1 is reduced relatively significantly. The heat also, since the surface of the glass substrate 1 other than the end surface 2 in the laser beam irradiation unit 4 near the cooled air, further glass substrate 1 themselves transmitted from the end face 2 of the glass substrate 1 by the heat transfer inside but less likely to be heated. Therefore, the thickness of the molten portion of the end face 2 the vicinity of the glass substrate 1 is suppressed thin and, the residual stress is also kept low, the glass substrate 1 reaches destroyed when recut free ingredients glass substrate 1 also it does not adversely affect.

[0036] direction of irradiating the laser beam 3, with respect to the vertical direction of the end faces 2 of the glass substrate 1, of the end face 2 in the longitudinal direction of the laser beam center line 3C angle A is within ± 70 °, and for the plate thickness direction it is preferred angle B is within ± 70 °. When the angle A is smaller than the large instrument or a 70 ° from 70 °, the long-side direction of the section width W of the laser beam 3 in the end face 2 of the glass substrate 1 becomes too large, it may not be the desired width is there. Moreover, the the angle B is less than the magnitude tool or a 70 ° from 70 °, the influence of the end face 2 extra piece of illumination Shinare ,, Les monodentate beam 3 is increased, also chamfered end faces 2 large difference in curvature of the surface side and back surface side may occur. More said angle A is ± 60 ° preferably within, and wherein the angle B is within ± 50 °, more preferably the angle A is ± 50 ° within, and the angle of B is within ± 30 °.

[0037] blowing direction of the cooling gas 6 for blowing air, the against the vertical direction of the end faces 2 of the glass substrate 1, the longitudinal direction of the angle C of the end face 2 the center line 6C of the cooling gas within ± 70 °, the plate it is preferable Atsukata direction of angle D is within ± 45 °. When the angle C is less than the atmospheric instrument or 70 ° than 70 °, than reduce the amount of cooling gas 6 is blown to the laser beam irradiation section 4, must the blast nozzle 5 is brought close to the glass substrate 1, the degree of freedom of the device installation resulting in little decrease is. Moreover, the the angle D is smaller than the larger or a 45 ° from 45 ° in the thickness direction, Ru danger that the position of the glass substrate 1 takes a large wind pressure on the surface of the glass substrate 1 is shifted. More said angle C is ± 60 ° preferably within, and the angle D is within ± 35 °, more preferably said angle C is ± 50 ° within, and the angle D is within ± 20 °.

[0038] Further, the wind speed of the cooling gas 6 is the laser beam irradiation section 4 is preferably a wind velocity lmZ sec ~ 200 meters / sec. The wind force ^ m / sec heatsink from smaller than the end surface 2 of the glass substrate 1 to the outside air is easily conducted to the interior small tool glass substrate 1. Accordingly, the volume of the molten portion and the stress portion of the glass substrate 1 is increased, thereby affecting the glass strength and cutting property. The wind speed may cause the position of the glass substrate 1 is shifted in difficult next and wind pressure, realizing a large and blower large than 200 meters / sec. Moreover, Les one required to melt the end face 2 of the glass substrate 1 leaving the heat to the outside air from the end face 2 of the glass substrate 1 is increased Zapawa increases, not practical requires laser device with high output . Velocity of the cooling gas 6, more preferably 2: a 150 meters / sec, 5: further preferably 100 m / sec.

[0039] Although the cooling gas 6 is not particularly limited, a gas not disassemble or burned by the laser beam 3 is preferred. For example, dry air is particularly preferred from the viewpoint of environmental and handling les,

[0040] The laser beam 3 is, in the end face 2 of the glass substrate 1, the glass base plate surface Eneru ghee density distribution of the laser beam irradiation unit 4 cross section is enclosed by the connected curved portion with a maximum of 1 / e 2 1 in the longitudinal direction of the width of the end face 2 W (mm), when the relative scanning speed between the laser beam 3 and the glass substrate 1 was U (mm / s), W≤0. 15 XU + 2 it is preferable that. Wherein the width W is larger than 0. 15 XU + 2, the value of the residual stress of the glass substrate 1 is increased, and the thickness of the residual stress layer is thick, Ru danger of reducing the edge strength of the glass substrate 1. The glass substrate 1 in which the width W is chamfered at 0. 15 XU + 2 is greater than condition, when cutting by extending the crack formed of glass force Potter is deviates et whether cracks cutting line such can be cut to accurate Les,. However, the width W can not be less only to about the wavelength of light for the wave optics diffraction limit field, also in view of the workability necessary to secure a sufficient distance between the condenser lens and the glass substrate since there is a practical point of view before Symbol width W is limited to more than 20 zm. Therefore, 0. 02≤W≤0. Is preferably 15 XU + 2, more preferably 0. 025≤W≤0. 15 X U + 1. 5, more preferably 0. 0 3≤W≤0. it is a 15 XU + 1.

[0041] The laser beam 3 is, in the end face 2 of the glass substrate 1, the average power density is defined by the total wattage Z irradiation area of the cross section of the laser beam irradiation unit 4 and the P (W / mm 2) when, deformation due to the viewpoint and the heating of the end faces 2 of the glass substrate 1 to a smooth chamfer, degradation of the glass quality due to sublimation of a particular elemental, and from the viewpoint of preventing the evaporation of the glass, (0. 5XU + 0 . 2) / 0. 7 / (0. 15XU + 2) ≤P≤ (10XU + 10) /0.005XUX0. 7 force S preferably Rere. Further, more preferably Rere Pi or, (0. 5XU + 0. 2) / 0. 7 / (0. 15XU + 1. 5) or more, more preferably (0. 5XU + 0. 2) / 0. 7 / is (0. 15XU + 1) or more. Especially (4XU) / 0. 7 / (0. 15XU + 2) Shi preferred that more than a les. It is more preferred P is, (10XU + 10) /0.005XU/0. 7X0.01 less, more preferably (10 XU + 10) /0.005XU/0. It 7X0.002 less.

[0042] The laser beam 3, the speed to the glass substrate 1 0.: it is preferable to relatively Hashi查 at ~ 200 mm / sec. 0. slow and productivity becomes worse than 1 mm / sec, 200 mm / sec earlier and laser device having a large output to obtain the required power is required realistic Nag also sufficient end surface 2 of the glass substrate 1 from may not smooth end surface 2 is obtained without being heated. The run 查速 degree, more preferably 0. 5~: 180mmZ seconds, more preferably 1 to: a 150 mm / sec.

[0043] before irradiating the end surface 2 of the glass substrate 1 with a laser beam 3, the end surface 2 of the glass substrate 1 may be preheated. Doing preheating, risk is reduced that cracking of the glass substrate 1 caused by the sudden change in temperature of the irradiated portion 4 for irradiating a laser beam 3, to increase the relative scanning speed of the laser beam 3 and the glass substrate 1 that can. Preheating it may also be heating the whole glass substrate 1 Iga, less preferred because the productivity is lowered. While preheating method is not particularly limited, it preferably is heated locally resistance heating element or a heating wire heater using a high intensity lamp or a surface portion of the end face 2 of the glass substrate 1 by using a carbonate Gasure THE, preferable. The maximum temperature reached by the preheating, the temperature of the glass substrate 1 to the strain point of the glass substrate Yue Enare, and things.

[0044] The laser beam 3 is wavelength 3: 11 it is preferable to use a laser beam 3 of xm. When the wavelength is shorter than 3 microns, the glass does not absorb a laser beam 3, may not be sufficiently heat the end faces 2 of the glass substrate 1. Further, if the wavelength is longer than 11 xm, to obtain the laser device is difficult practical such les. More preferably the wavelength 4 to 10 9 xm, more preferably Wavelength 9:. 10. is 8 xm.

[0045] The laser light source is not particularly limited oscillation mode, continuous wave light (CW light) or pulse onset oscillating light, modulated periodically intensity change in ON / OFF modulated light (continuous wave light of continuous wave light it may be any of the grant). However, if pulsed light and the continuous wave light modulated light, the relative scanning velocity U of the laser beam 3 is slow, there is a possibility that the scanning direction resulting in beam La of the chamfered shape. In this case, arbitrary preferred that the product of the relative run 查速 of the period of the oscillation and modulation and the laser beam 3 and the glass base plate 1 is less than half the thickness of the glass substrate 1.

[0046] For example CO laser, especially a laser beam is the most common of the oscillation wavelength 10. 6 beta m

2

Preferred Les,. When the laser beam 3 in this wavelength region, it is possible to most of the laser beam 3 on the glass substrate 1 is absorbed, causing the temperature of a portion irradiated with the laser beam 3 is risen to an soft I heat temperature.

[0047] In addition, the laser beam 3, may be irradiated to so that converges in the thickness direction of the end face of the glass substrate to the glass substrate 1. In the thickness direction of the end face of the glass substrate, when the laser beam 3 diverges, after the end face 2 of the portion of the glass substrate 1 has come round by melting, plate end face 2 of the glass substrate 1 that put the illuminating part 4 thickness direction end than the angle of incidence of the light beam increases relative to the vicinity of the sides, it becomes difficult to absorb the energy of the laser beam 3, the heating becomes insufficient. As a result, the residual melting scratches insufficient parts, can lead to edge strength decline

[0048] In the method of the present invention, since the crack of the end face 2 of the force the glass substrate 1 to ensure that does not generate at all stress to the chamfered portion of the glass substrate 1 is in principle difficult are removed melted by heat , the same strength and chamfering the glass substrate 1 by a conventional grinding can be secured, there is no problem with practical strength. As for the optical problems typified by birefringence, typical applications, for example with respect to a flat panel display, the pixel is no problem rather come to the glass edge. If necessary it is possible to remove the residual stress easily if annealing the whole glass substrate 1.

[0049] As an apparatus utilizing the present invention, for example, a laser beam emitted from the generator of the at least one laser beam to have a desired cross-sectional shape of a convex lens Ya cylindrical lens or the like, which end faces of the glass substrate to together obtain Bei a mechanism for irradiating so as to have a desired relative speed, it is possible to construct a device Tokoro Nozomu chamfered glass substrate is obtained by providing a mechanism for blowing cooling air at the same time the laser beam irradiation unit .

[0050] FIG. 4 (a) ~ (c) is a conceptual diagram of an example of a chamfering apparatus for a glass substrate according to the present invention. 4 (a) is a laser beam irradiation device 7 is fixed, it is an example for relatively moving the two who by conveying the glass substrate in the direction of H. As shown in FIG. 4 (a), the apparatus (not shown) device for transporting in a state of being accurately positioned the glass substrate 1, (not shown) generating device of the laser beam 3, the sectional shape of the laser beam 3 laser beam irradiation elevation device 7 irradiates controlling the end face 2 of the glass substrate 1 (not Shimese drawing) apparatus for transmitting from a laser beam 3 generator to the laser beam irradiation device 7, constituted by the blowing nozzle 5, the cooling gas It is. The power and blowers (compressors, etc.), wherein such apparatus for controlling the flow rate of the output and the cooling gas 6 of the laser beam 3 was omit.

[0051] Thus, the drive unit is small device is extremely simple configuration. Incidentally, chamfering may be performed by one end face, but as shown in FIG. 4 (a), it is also possible to perform the conveyance direction H parallel to both end faces 2 of the glass substrate 1 at the same time.

[0052] FIG. 4 (b) is an example for relatively moving them together to secure the laser beam irradiation device 7 to the manufacturing apparatus for a glass substrate is continuously molded. Moyore thus, performing chamfering of the glass substrate continuously in production lines such as Freund Ichito method Ya fusion process by continuously feeding the molten glass. If it is possible to chamfer carried out in such a production line, stacked once the glass substrate to an intermediate pallets glass substrate production line for continuous molding in a conventional manner, the step of cycling the plane preparative line of the next step It can be reduced, Ru Hakare the efficiency of equipment and processes. Furthermore, since the process of handling the glass substrate before chamfering is reduced, it is possible to reduce the cracking and chipping caused by the end surface strength is weak. Incidentally, chamfer it may also be carried out by one end face les, but, as shown in FIG. 4 (b), it is also possible to perform the movement direction I parallel to both end faces 2 of the glass substrate 1 at the same time.

[0053] FIG. 4 (c), the glass substrate 1 was fixed, an example for relatively moving both by Hashi查 the laser beam irradiation device 7 and the blower nozzle 5. Chamfering may be performed by one end face, but as shown in FIG. 4 (c), it is also possible to perform the conveying direction J and flat lines of both end faces 2 of the laser beam irradiation device 7 and the blower nozzle 5 at the same time. It may also be carried out fourth end surface simultaneously.

[0054] Thus, the apparatus of the present invention, row relative motion between the laser beam and the glass substrate scans the Yogu laser beam irradiation device 7 and the blower nozzle 5 be performed by conveying the glass substrate 1 One even good record,. The laser beam irradiation device 7 may perform chamfering simultaneously Yogu plurality of laser beam irradiation device 7 even more. For simplicity of the apparatus, the blowing nozzle 5 and the laser beam irradiation device 7 may be integrated.

Example

[0055] Hereinafter, further illustrate the invention by way of examples.

It was performed chamfered testing of the glass substrate in the present embodiment, as shown in FIG. As a test glass substrate 1, a glass substrate for a liquid crystal display fractured by the wheel cutter was prepared under the following conditions.

A: length 12cm, width 2. 5cm, thickness 0. 7mm

B: length 12cm, width 2. 5cm, thickness 0. 5mm

C: length 12cm, width 2. 5cm, thickness 0. 5mm

D: length 12cm, width 2. 5cm, thickness 0. 5mm

E: length 12cm, width 2. 5cm, thickness 0. 5mm

F: length 12cm, width 2. 5cm, thickness 0. 5mm

G: length 5cm, width 0. 5cm, thickness 0. 3mm

Here, a glass substrate C and F, by further # 500 grinding wheel end surfaces were chamfered as the radius of curvature of about 0. 25 mm. In addition, glass substrate LCD display glass substrate (product name: AN100, manufactured by Asahi Glass Co., Ltd.) of up to A~F is, the glass substrate G, liquid crystal glass substrate for a display (trade name 〇_A_ 10, Nippon Electric Glass it is a Co., Ltd.).

As [0056] Example 1, using the glass substrate A, as shown in FIG. 1, the end face of the glass substrate 1, wavelength 10.6 micron continuous wave carbon dioxide laser device (laser oscillation form CW light) , using a spherical lens and a cylindrical lens (not shown), the end face 2 of the glass substrate 1, the total wattage Q of the cross section of the laser beam irradiation section 4 is 18W, the end surface of the glass substrate 1 of the laser beam 3 2 0. 1 mm in the longitudinal direction of the width W of the end face of the glass substrate surface on which the energy density distribution of a cross section of the laser beam irradiation section 4 is surrounded by connecting it curved portion having a maximum of 1 / e 2 of plate thickness was irradiated with laser beam 3 such that the direction of the height H and the substantially elliptical shape of 3. 5 mm. The average power density P that is defined by the total wattage / irradiation area in this case was about 51W / mm 2. Incidentally, the laser beam 3, 0 ° illumination angle A in the longitudinal direction of the end face 2 with respect to the vertical direction of the end faces 2 of the glass substrate 1, the irradiation angle A in the thickness direction was irradiated at 0 °.

[0057] Further, the blasting nozzle 5 the dry air as the cooling gas 6, the cooling gas 6, 40 ° blowing angle C in the longitudinal direction of the end face with respect to the vertical direction of the end faces 2 of the glass base plate 1, the plate thickness the direction of the air blowing angle D to adjust the position and orientation of the cooling nozzles 5 so that the 0 °. Wind S of the cooling gas 6 was about 25mZ second at the end face of the glass substrate 1.

[0058] Glass substrate 1 is in the longitudinal direction of the end face 2 of the glass substrate 1, hold such irradiated with the laser beam 3, the relative run 查速 ratio U between the laser beam 3 and the glass substrate 1 as a 2 mm / sec was Hashi查.

Further, except that the prepared B~G condition glass substrate use les ,, following the was changed as shown in Table 1 were carried out chamfering example 2-7 in the same manner as in Example 1. Note that preheat Example 6, a carbon dioxide laser device having a wavelength of 10.6 microns a continuous wave (laser oscillation mode CW light) other prepared, from the irradiation center of the laser beam 3, the longitudinal direction of the glass substrate in 13mm upstream, a glass substrate upper surface of 7mm behind the direction the edge, 30 mm in the longitudinal direction of the section force plate of the glass substrate plate top surface of the laser beam, so as to be substantially elliptical shape of 10mm in width direction, the output of 19W It was preheated end surface 2 of the glass substrate 1 in irradiating the.

The test conditions are shown in Table 1.

[table 1]

Result of the test, the end face 2 of the glass substrate 1 is smoothed angle by melt from Example 1 7 rounded, beveled glass substrate was obtained. In addition, the glass substrate 1, and Taori after scribed by hand using a wheel cutter (3-star Diamond Industrial Co., Ltd. Ml 59), it was confirmed to be able to along go-between fracture to scrub Eve marks.

[0060] As a comparative example, it was chamfering without blowing under the same conditions as Examples 1-7. As a result, the end surface 2 of the glass substrate 1 in any case is rounded is smoothed angle by melting, but beveled glass substrate is obtained, where the present glass substrate 1 is scribed in the same manner as described above, scan Clive crack in a location other than the marks could not be cut normally be self-propelled. Industrial Applicability

[0061] The present invention, in order to go through manufacturing many processes can be widely applied to a glass substrate that need to be chamfered end faces of the glass board strength of the glass in question. In particular, through the Many manufacturing processes of a liquid crystal display, a plasma display is suitable for organic EL Disupu plate. Incidentally, Akira Itoda Statement of 曰本 Patent Application 2006- 38018 filed on Feb. 15 曰 2006, claims, citing the entire specification, drawings and abstract here, opening of the specification of the present invention as shown, it is intended to incorporate.

Claims

The scope of the claims
[1] A chamfering method of the glass substrate by irradiation with a laser beam, at least one laser beam irradiates to the end surface of the glass substrate, characterized in that blowing cooling gas into the laser beam irradiation portion of the glass substrate chamfering method of a glass substrate to be.
[2] irradiation angle of the laser beam, with respect to the vertical direction of the end face of the glass substrate, characterized in that within ± 70 ° to the longitudinal direction of the end face, and is within ± 70 ° in the direction of plate thickness chamfering method for a glass substrate according to claim 1.
[3] the air blowing direction of the cooling gas, characterized in that with respect to the vertical direction of the end face of the substrate of the glass, within ± 70 ° to the longitudinal direction of the end face is within ± 45 ° to the thickness direction 請chamfering method for a glass substrate according to Motomeko 1 or 2.
[4] The wind speed of the cooling gas in the laser beam irradiation unit, chamfering how the glass substrate according to any force one of claims 1 to 3, characterized in that the wind speed lm / sec ~ 200 meters / sec .
[5] at the end face of the glass substrate, the glass substrate surface energy density distribution of the laser beam irradiation unit cross section maximum (the e base of natural logarithm) of l / e 2 surrounded by the connected curve portion to be a W (mm) in the longitudinal direction of the width of the end face of, when the relative specific run 查速 degree between the glass substrate and the laser beam was set to U (mm / s),
W≤0. 15 claims claim 1-4 Les, characterized in that the XU + 2, displacement forces, glass substrate chamfering method according to item 1.
[6] at the end face of the glass substrate, an end surface of the glass substrate surface energy density distribution of the laser beam irradiation unit cross section maximum (the e base of natural logarithm) of LZE 2 surrounded by the connected curve portion to be a W (mm) in the longitudinal direction of the width of, when the relative specific run 查速 degree between the glass substrate and the laser beam was set to U (mm / s),
0. 02≤W≤0. 15 XU + 2
Chamfering how the glass substrate according to any force one of claims 1 to 4, characterized in that.
[7] the of an end face of a glass substrate, when the average power density is defined by the total wattage / irradiation area of the laser beam irradiation unit section was P (W / mm 2), (0. 5XU + 0. 2 ) / 0. 7 / (0. 15XU + 2) ≤P≤ (10XU + 10) /0.005XUX 0. 7
Chamfering method for a glass substrate according to any force one of claims 1 to 6 is.
[8] in the end face of the glass substrate, when the average power density is defined by the total wattage Z irradiation area of the laser beam irradiation unit section was P (W / mm 2),
(4XU) / 0. 7 / (0. 15XU + 2) ≤P≤ (10XU + 10) /0.005XUX0. Glass substrate according to any force 4 of claims 1-6, characterized in that the 7 chamfering how of.
[9] before irradiating the laser beam on the end face of the glass substrate, any force of the preceding claims, characterized in that preheating the end face of the glass substrate, chamfering the glass substrate according to item 1 mETHOD Ri.
[10] speed of Hashi查 the laser beam, to the glass substrate, relatively 0.: claim, wherein it is ~ 200 mm / sec: glass according to any one of 1-9 chamfering method of a substrate.
[11] Wavelength of the laser beam, 3: 11 / claim, characterized in that a m. 1 to: 10, whichever is chamfered method for a glass substrate according to (1).
[12] according to claim wherein the laser beam, characterized in that to the glass substrate to converge in the thickness direction of the end face of the glass substrate: ~ 11 chamfering method for a glass substrate according to any one of.
[13] in line for manufacturing a glass substrate by the molten glass was continuously fed float, claim and performs chamfering of the glass substrate continuously 1: to any force one of 12 chamfering method of a glass substrate according.
[14] Claim: A chamfering apparatus for a glass substrate for performing chamfering method of a glass substrate according to any one of to 13, a machine structure for irradiating against the end face of the glass at least one laser beam, chamfering apparatus for a glass substrate, characterized in that it and a mechanism for blowing a cooling gas into the laser beam irradiation portion of the glass substrate.
PCT/JP2007/051308 2006-02-15 2007-01-26 Method and apparatus for chamfering glass substrate WO2007094160A1 (en)

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JP2009035433A (en) * 2007-07-31 2009-02-19 Asahi Glass Co Ltd Method and device for chamfering glass substrate, and chamfered glass substrate
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JP2009035433A (en) * 2007-07-31 2009-02-19 Asahi Glass Co Ltd Method and device for chamfering glass substrate, and chamfered glass substrate
JP5580049B2 (en) * 2007-10-16 2014-08-27 三星ダイヤモンド工業株式会社 Removal processing method and hollowing processing method and chamfering method u-shaped groove processing method of the brittle material substrate and using the same
US9850159B2 (en) 2012-11-20 2017-12-26 Corning Incorporated High speed laser processing of transparent materials
JP2016534012A (en) * 2013-08-23 2016-11-04 ラスコム・リミテッド How to blunt the sharp edges of the glass products
EP3036203A4 (en) * 2013-08-23 2017-03-15 "Lascom" Ltd. Method for blunting sharp edges of glass objects
US9850160B2 (en) 2013-12-17 2017-12-26 Corning Incorporated Laser cutting of display glass compositions
US9701563B2 (en) 2013-12-17 2017-07-11 Corning Incorporated Laser cut composite glass article and method of cutting
US9815730B2 (en) 2013-12-17 2017-11-14 Corning Incorporated Processing 3D shaped transparent brittle substrate
US10183885B2 (en) 2013-12-17 2019-01-22 Corning Incorporated Laser cut composite glass article and method of cutting
US9676167B2 (en) 2013-12-17 2017-06-13 Corning Incorporated Laser processing of sapphire substrate and related applications
US10233112B2 (en) 2013-12-17 2019-03-19 Corning Incorporated Laser processing of slots and holes
US10179748B2 (en) 2013-12-17 2019-01-15 Corning Incorporated Laser processing of sapphire substrate and related applications
US10144093B2 (en) 2013-12-17 2018-12-04 Corning Incorporated Method for rapid laser drilling of holes in glass and products made therefrom
US10173916B2 (en) 2013-12-17 2019-01-08 Corning Incorporated Edge chamfering by mechanically processing laser cut glass
CN104741793A (en) * 2013-12-27 2015-07-01 三星钻石工业股份有限公司 Method for chamfering glass substrate and laser processing apparatus
US9815144B2 (en) 2014-07-08 2017-11-14 Corning Incorporated Methods and apparatuses for laser processing materials
US10047001B2 (en) 2014-12-04 2018-08-14 Corning Incorporated Glass cutting systems and methods using non-diffracting laser beams
US10252931B2 (en) 2015-01-12 2019-04-09 Corning Incorporated Laser cutting of thermally tempered substrates

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KR100985428B1 (en) 2010-10-05
TW200800454A (en) 2008-01-01

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