JP6109551B2 - Liquid crystal panel polishing method - Google Patents
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- 239000000758 substrate Substances 0.000 claims description 96
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
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- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Surface Treatment Of Glass (AREA)
Description
本発明は、液晶パネル研磨方法に関するものである。 The present invention relates to a liquid crystal panel polishing method.
近年、携帯電話、携帯ゲーム機器、携帯端末機器等の表示用ディスプレイとして、液晶ディスプレイ（以下、ＬＣＤと表記する）が用途に応じて用いられている。 2. Description of the Related Art In recent years, liquid crystal displays (hereinafter referred to as LCDs) have been used according to applications as display displays for mobile phones, mobile game devices, mobile terminal devices, and the like.
これらＬＣＤの中でも、特に薄膜トランジスタ（以下、ＴＦＴと表記する）型ＬＣＤは、表示が高精細であることから幅広く用いられている。 Among these LCDs, in particular, a thin film transistor (hereinafter referred to as TFT) type LCD is widely used because of its high definition display.
このＴＦＴ型ＬＣＤでは、ＴＦＴ層を形成したガラス基板と、カラーフィルター（以下ＣＦと表記する）層を形成したガラス基板により、スペーサーを含む液晶部材を挟んで積層し、封止した構成の液晶パネルが用いられている。 In this TFT-type LCD, a liquid crystal panel having a structure in which a glass substrate on which a TFT layer is formed and a glass substrate on which a color filter (hereinafter referred to as CF) layer is formed, laminated with a liquid crystal member including a spacer interposed therebetween, and sealed. Is used.
一方、このＴＦＴ型ＬＣＤは、近年、携帯型端末機器等に使用されることから薄型化の要求が高まっている。そして、このＴＦＴ型ＬＣＤの薄型化に対しては、ＴＦＴ型ＬＣＤに用いられる液晶パネルの主要材料であるガラス基板を薄くすることによってＴＦＴ型ＬＣＤ全体の薄型化を可能とすることができる。 On the other hand, since the TFT type LCD is used for a portable terminal device or the like in recent years, there is an increasing demand for thinning. To reduce the thickness of the TFT type LCD, it is possible to reduce the thickness of the entire TFT type LCD by thinning the glass substrate, which is the main material of the liquid crystal panel used in the TFT type LCD.
液晶パネルに用いられているガラス基板の薄型化を図る方法としては、一般に、液晶パネル全体又は片面を、フッ酸等の研磨液に浸漬してガラス基板表面を研磨する化学研磨法が行われている。 As a method for reducing the thickness of a glass substrate used in a liquid crystal panel, a chemical polishing method is generally used in which the entire liquid crystal panel or one surface is immersed in a polishing liquid such as hydrofluoric acid to polish the glass substrate surface. Yes.
しかしながら、この浸漬による化学研磨法では、研磨後のガラス基板表面にディンプルや、反応生成物が発生することがあった。 However, in this chemical polishing method by immersion, dimples and reaction products may be generated on the polished glass substrate surface.
ディンプルは、化学研磨後のガラス基板表面に点状、又は列状に現れる窪みであって、化学研磨の前にガラス基板表面に存在する数十μｍ程度の傷や微細孔が、化学研磨により拡大して窪みとして検出されるものである。 Dimples are depressions that appear in the form of dots or lines on the glass substrate surface after chemical polishing, and scratches and micropores of about several tens of μm that exist on the glass substrate surface before chemical polishing are expanded by chemical polishing. And detected as a depression.
また、反応生成物は、ガラス基板の材料に含まれる成分が化学研磨液と反応したものや、化学研磨液に溶けた成分であって、これが、ガラス表面に固着する。 The reaction product is a component obtained by reacting a component contained in the material of the glass substrate with the chemical polishing solution or a component dissolved in the chemical polishing solution, which is fixed to the glass surface.
そして、このようなディンプルが発生したり、反応生成物が固着した液晶パネルを用いてＴＦＴ型ＬＣＤを製造した場合には、ディンプルを原因とした輝点と呼ばれる表示不良が発生したり、反応生成物が固着して膜特性が低下することによる、表示不良やタッチパネルの不具合等が発生することがあった。 And when such a dimple is generated or a TFT type LCD is manufactured using a liquid crystal panel to which a reaction product is fixed, a display defect called a bright spot due to the dimple may occur or a reaction Display defects, touch panel defects, and the like may occur due to the fact that objects adhere and film characteristics deteriorate.
これまでに、このディンプルを解消する方法として、予めディンプルの原因となる傷や微細孔を消滅させるために、化学研磨前のガラス基板表面に機械研磨を施す方法が提案されている（例えば、特許文献１を参照）。 In the past, as a method for eliminating this dimple, a method of mechanically polishing the glass substrate surface before chemical polishing in order to eliminate scratches and micropores that cause dimples in advance has been proposed (for example, patents). Reference 1).
しかしながら、この方法は、ディンプルの抑制のみを目的としたものであり、化学研磨により発生する反応生成物の固着を抑制することは目的としていないため、反応生成物に起因する表示不良やタッチパネルの不具合までを解決できるものではなかった。 However, this method is only for the purpose of suppressing dimples, and is not intended to suppress the sticking of reaction products generated by chemical polishing. It could not be solved.
一方、液晶パネルは、現在、一般にＧ（generation）で表される規格のＧ５（１２００ｍｍ×１０００ｍｍ）程度の大型のサイズの液晶パネルを切断して、最終製品の画面サイズとしている。 On the other hand, the liquid crystal panel is currently cut into a large-sized liquid crystal panel having a size of about G5 (1200 mm × 1000 mm) of the standard generally represented by G (generation) to obtain the screen size of the final product.
このような現状において、製造現場では、大型の液晶パネルを取り扱う際に、液晶パネル側面の欠けや、液晶パネル自体の破損が発生することがあった。そして、これら液晶パネルの欠けや破損は歩留まりの低下を招き、製造コストの上昇の原因となっていた。 Under such circumstances, at the manufacturing site, when handling a large liquid crystal panel, chipping of the side surface of the liquid crystal panel or breakage of the liquid crystal panel itself may occur. Further, chipping or breakage of these liquid crystal panels causes a decrease in yield, which causes an increase in manufacturing cost.
なお、従来の液晶パネルの製造現場では、これらのＧ５程度の大型の液晶パネルを取り扱う際の欠けや破損の発生の対策を考慮していなかった。 In addition, in the manufacturing site of the conventional liquid crystal panel, the countermeasure of the generation | occurrence | production of the chip | tip and damage at the time of handling these large liquid crystal panels about G5 was not considered.
本発明は、上記のような背景から従来の問題点を解消し、大型の液晶パネルの欠けや破損の発生を低減し、更に、ディンプルの発生、そして反応生成物の固着に伴う表示不良等の不具合を大幅に抑制することができる液晶パネル研磨方法を提供することを課題としている。 The present invention solves the conventional problems from the background as described above, reduces the occurrence of chipping and breakage of a large liquid crystal panel, and further, displays such as dimples and display defects due to sticking of reaction products. It is an object of the present invention to provide a liquid crystal panel polishing method capable of greatly suppressing defects.
即ち、本発明の液晶パネル研磨方法は以下のことを特徴としている。 That is, the liquid crystal panel polishing method of the present invention is characterized by the following.
第１に、ＴＦＴ層を形成したバックライト側となる第１のガラス基板とカラーフィルター層を形成した第２のガラス基板との間に液晶部材を挟持してなる液晶パネルの表面に化学研磨を施す化学研磨工程を有する液晶パネル研磨方法において、前記化学研磨工程の前に、前記液晶パネルの前記第１及び第２のガラス基板のコーナー部及び側面部のエッジ部の面取りを行う面取工程と、前記化学研磨工程後の前記第１のガラス基板表面に存在するディンプルの平均径が２００μｍ以下となるように、前記第１のガラス基板の機械研磨を行う第１ガラス基板機械研磨工程と、前記第１ガラス基板機械研磨工程の後に、前記液晶パネル表面の残渣を除去する第１残渣処理工程と、前記第１残渣処理工程の後に、前記第１のガラス基板と前記第２のガラス基板の表面を化学研磨する前記化学研磨工程と、前記化学研磨工程の後に、前記第２のガラス基板表面に存在するディンプルの平均径が５０μｍ以下となるように、前記第２のガラス基板の機械研磨を行う第２ガラス基板機械研磨工程と、前記第２ガラス基板機械研磨工程の後に、前記液晶パネル表面の残渣及び、前記化学研磨工程で発生した反応生成物を除去する第２残渣処理工程を有することを特徴とする。 First, chemical polishing is performed on the surface of a liquid crystal panel in which a liquid crystal member is sandwiched between a first glass substrate on the backlight side on which a TFT layer is formed and a second glass substrate on which a color filter layer is formed. In the liquid crystal panel polishing method having a chemical polishing step to be applied, before the chemical polishing step, a chamfering step of chamfering corner portions and edge portions of the side surfaces of the first and second glass substrates of the liquid crystal panel; , so that the average diameter of the dimples present in the first glass substrate surface after the chemical polishing step is 200μm or less, and the first glass substrate mechanical polishing step of performing mechanical polishing of the first glass substrate, said after the first glass substrate mechanical polishing step, a first residue treatment step of removing the residue of the liquid crystal panel surface, after said first residue treatment step, the first glass substrate and the second moth The chemical polishing step for chemically polishing the surface of the glass substrate, and the second glass substrate so that an average diameter of dimples existing on the surface of the second glass substrate is 50 μm or less after the chemical polishing step. A second glass substrate mechanical polishing step for performing mechanical polishing, and a second residue treatment step for removing residues on the surface of the liquid crystal panel and reaction products generated in the chemical polishing step after the second glass substrate mechanical polishing step. It is characterized by having.
第２に、上記第１の液晶パネル研磨方法において、前記液晶パネルの大きさが、１２００ｍｍ×１０００ｍｍ〜１５００ｍｍ×１３００ｍｍの範囲であることを特徴とする。 Second, in the first liquid crystal panel polishing method, the size of the liquid crystal panel is in a range of 1200 mm × 1000 mm to 1500 mm × 1300 mm .
上記第１の発明によれば、化学研磨工程の前に、液晶パネルの前記第１及び第２のガラス基板の面取りを行う面取工程と、化学研磨工程後の前記第１のガラス基板表面に存在するディンプルの平均径が２００μｍ以下となるように、第１のガラス基板の機械研磨を行う第１ガラス基板機械研磨工程と、液晶パネル表面の残渣を除去する第１残渣処理工程を設け、化学研磨工程後に、反応生成物除去工程を設けることにより、大型の液晶パネルの欠けや破損の発生を低減し、ディンプルの発生に伴う表示不良を大幅に抑制し、化学研磨工程により、液晶パネル表面に固着した反応生成物を除去することができる液晶パネル研磨方法を提供することができる。 According to the first aspect, the chamfering step of chamfering the first and second glass substrates of the liquid crystal panel before the chemical polishing step, and the surface of the first glass substrate after the chemical polishing step are performed. A first glass substrate mechanical polishing step for mechanically polishing the first glass substrate and a first residue treatment step for removing residues on the surface of the liquid crystal panel are provided so that the average diameter of the existing dimples is 200 μm or less. By providing a reaction product removal step after the polishing step, the occurrence of chipping and breakage of the large liquid crystal panel is reduced, and display defects due to the occurrence of dimples are greatly suppressed. It is possible to provide a liquid crystal panel polishing method capable of removing the adhered reaction product.
上記第２の発明によれば、化学研磨工程後の第２のガラス基板表面に存在するディンプルの平均径が５０μｍ以下となるように、前記第２のガラス基板の機械研磨を行い、第２ガラス基板機械研磨工程と、前記液晶パネル表面の残渣及び、化学研磨工程で発生した反応生成物を除去する第２残渣処理工程を設けることにより、上記第１の発明の効果に加え、更にディンプルの発生に伴う表示不良を大幅に抑制した液晶パネル研磨方法を提供することが可能となる。 According to the second aspect of the invention, the second glass substrate is mechanically polished so that the average diameter of dimples existing on the surface of the second glass substrate after the chemical polishing step is 50 μm or less, and the second glass substrate is polished. In addition to the effect of the first invention, a dimple is further generated by providing a substrate mechanical polishing step and a second residue treatment step for removing the residue on the surface of the liquid crystal panel and a reaction product generated in the chemical polishing step. Accordingly, it is possible to provide a liquid crystal panel polishing method in which display defects accompanying the above are greatly suppressed.
本発明の液晶パネル研磨方法は、図１に示すような構成の液晶パネル表面の研磨を行う液晶パネル研磨方法である。 The liquid crystal panel polishing method of the present invention is a liquid crystal panel polishing method for polishing the surface of a liquid crystal panel having a structure as shown in FIG.
この液晶パネルは、第１のガラス基板１と第２のガラス基板２により液晶部材３及びスペーサー３１を挟持して、縁部をシール材４により封止した構成となっている。
This liquid crystal panel has a configuration in which a
第１のガラス基板１は、液晶部材３側にＴＦＴ層１１が形成されており、また、第２のガラス基板２は、液晶部材３側にＣＦ層２１が形成されている。
The
本発明の液晶パネル研磨方法は、液晶パネルの表面、即ち、ガラス基板のＴＦＴ層１１、ＣＦ層２１が形成されていない表面１２、２２側を研磨する方法に関するものである。
The liquid crystal panel polishing method of the present invention relates to a method for polishing the surface of a liquid crystal panel, that is, the
以下に、本発明の液晶パネル研磨方法についてフロー図を用いて詳細に説明する。図２は、本発明の液晶パネル研磨方法の一実施形態を示すフロー図である。 Hereinafter, the liquid crystal panel polishing method of the present invention will be described in detail with reference to a flow chart. FIG. 2 is a flowchart showing one embodiment of the liquid crystal panel polishing method of the present invention.
この実施形態の液晶パネル研磨方法では、面取工程（Ｓ１）、第１ガラス基板機械研磨工程（Ｓ２）、第１残渣処理工程（Ｓ３）、化学研磨工程（Ｓ４）、反応生成物除去工程（Ｓ５）の工程を有している。 In the liquid crystal panel polishing method of this embodiment, the chamfering step (S1), the first glass substrate mechanical polishing step (S2), the first residue treatment step (S3), the chemical polishing step (S4), the reaction product removal step ( Step S5) is included.
本発明の液晶パネル研磨方法に好適に対応可能な液晶パネルのサイズは、一般にＧ（generation）で表される規格の、大型液晶パネルとされるＧ５（１２００ｍｍ×１０００ｍｍ）程度のサイズのものである。 The size of the liquid crystal panel that can be suitably applied to the liquid crystal panel polishing method of the present invention is a size of about G5 (1200 mm × 1000 mm), which is a large liquid crystal panel of a standard generally represented by G (generation). .
Ｇ５程度のサイズの液晶パネルでは、通常、ディンプルの発生や、反応生成物の付着に伴う表示不良等を抑制することが非常に困難であり、また、研磨工程等での欠けや割れの発生に伴う損害が大きなものとなる。 In the case of a liquid crystal panel having a size of about G5, it is usually very difficult to suppress dimples and display defects due to the adhesion of reaction products. The accompanying damage will be significant.
そのため、以下に説明する本発明の液晶パネル研磨方法の面取工程（Ｓ１）から反応生成物除去工程（Ｓ５）の一連の工程は重要であり、これらの工程により高品質な液晶パネルを歩留まりよく製造することが可能となる。
＜面取工程（Ｓ１）＞
本発明の液晶パネル研磨方法では、まず、面取工程（Ｓ１）により液晶パネルのコーナー部及び側面部のエッジ部の面取を行う。
Therefore, a series of steps from the chamfering step (S1) to the reaction product removing step (S5) of the liquid crystal panel polishing method of the present invention to be described below is important. With these steps, a high-quality liquid crystal panel can be obtained with a high yield. It can be manufactured.
<Chamfering step (S1)>
In the liquid crystal panel polishing method of the present invention, first, the chamfering step (S1) is performed to chamfer the corner portion and the edge portion of the side surface portion of the liquid crystal panel.
面取の条件としては、最終製品のＬＣＤの機能に影響を及ぼさない範囲であれば特に制限はなく、液晶パネルの搬送路の中間部に設けた研磨装置により、液晶パネルのコーナー部及びエッジ部の研磨を行うことができる。 The chamfering condition is not particularly limited as long as it does not affect the function of the LCD of the final product, and the corner portion and the edge portion of the liquid crystal panel can be obtained by a polishing device provided in the middle portion of the liquid crystal panel conveyance path. Can be polished.
コーナー部の研磨は、例えば、ダイヤモンド粒度＃３００〜６００のメタルボンドの回転砥石を用いて、図４（ａ）に示すようなカット形状で１Ｃ〜５Ｃ又は１Ｒ〜５Ｒとなるように行うことができる（Ｃ及びＲはJISB001:2010に準ずる）。 Polishing of the corner portion is performed, for example, by using a metal bond rotating grindstone having a diamond particle size of # 300 to 600 so as to be 1C to 5C or 1R to 5R with a cut shape as shown in FIG. Yes (C and R conform to JISB001: 2010).
また、側面部の面取は、例えば、ダイヤモンド粒度＃３００〜６００のメタルボンドの回転砥石を用いて、図４（ｂ）に示すようなカット形状で面取幅０．１ｍｍ以上、面形状Ｃ又はＲとなるように行うことができる（Ｃ及びＲはJISB001:2010に準ずる）。 Further, the chamfering of the side surface portion is performed by, for example, using a metal-bonded rotating grindstone having a diamond particle size of # 300 to 600, with a cut shape as shown in FIG. Or it can carry out so that it may become R (C and R are based on JISB001: 2010).
上記のコーナー部及び側面部の研磨は、液晶パネルを搬送しながら研磨装置により行うものであるが、搬送条件及び研磨装置の運転条件は、導入する液晶パネルのサイズや材質等に応じてそれぞれ適宜設定することができる。 The above-mentioned corner and side portions are polished by a polishing apparatus while transporting the liquid crystal panel. The transport conditions and the operating conditions of the polishing apparatus are appropriately determined according to the size and material of the liquid crystal panel to be introduced. Can be set.
上記の条件による液晶パネルの面取を行うことにより、機械的な衝撃に対するコーナー部及び側面部の強度を飛躍的に向上させることができ、この後の各工程での液晶パネルの欠けや破損を大幅に低減させることが可能となる。 By chamfering the liquid crystal panel under the above conditions, the strength of the corner and side portions against mechanical shock can be dramatically improved, and chipping or breakage of the liquid crystal panel in each subsequent process can be achieved. It can be greatly reduced.
また、この面取工程では、面取後の洗浄乾燥工程により研磨ガラス粉やガラス基板表面の汚れを洗浄除去し、乾燥を行う。 In this chamfering process, the polishing glass powder and the dirt on the surface of the glass substrate are cleaned and removed by a cleaning and drying process after chamfering, and drying is performed.
洗浄、乾燥の条件としては、研磨ガラス粉やガラス基板表面の汚れを除去できる条件であれば特に制限はないが、洗浄は、例えば、液晶パネルを搬送しながら液晶パネルの上下面を、材質がナイロン等のディスクブラシと、材質がナイロン等のロールブラシを用いて水により行うことができる。 The cleaning and drying conditions are not particularly limited as long as they can remove the polishing glass powder and the dirt on the glass substrate surface. For example, the cleaning may be performed on the upper and lower surfaces of the liquid crystal panel while transporting the liquid crystal panel. It can be carried out with water using a disk brush such as nylon and a roll brush made of nylon or the like.
また乾燥は、例えば、材質がＰＶＡ（ポリビニルアルコール）スポンジ等の脱水ロール及び、エアナイフ、温風乾燥機等を用いて行うことができる。
＜第１ガラス基板機械研磨工程（Ｓ２）＞
次に、ＴＦＴ層を形成した第１のガラス基板表面を機械研磨する第１ガラス基板機械研磨工程（Ｓ２）を行う。
The drying can be performed using, for example, a dehydrating roll whose material is PVA (polyvinyl alcohol) sponge, an air knife, a hot air dryer or the like.
<First glass substrate mechanical polishing step (S2)>
Next, a first glass substrate mechanical polishing step (S2) for mechanically polishing the surface of the first glass substrate on which the TFT layer is formed is performed.
第１ガラス基板機械研磨工程（Ｓ２）で用いる研磨機は、研磨パッド及び研磨材を用いて研磨する通常公知の自動機械研磨機を好適に用いることができ、例えば、材質が発泡ポリウレタン等の研磨パッド及び、材質が酸化セリウム等の研磨材を用いて行うことができる。 As the polishing machine used in the first glass substrate mechanical polishing step (S2), a generally known automatic mechanical polishing machine for polishing using a polishing pad and an abrasive can be suitably used. For example, the material is a polishing material such as polyurethane foam. The pad and the material can be used with an abrasive such as cerium oxide.
第１ガラス基板機械研磨工程（Ｓ２）を、後述する化学研磨工程（Ｓ４）の前に行い、予めＴＦＴ層を形成した第１のガラス基板表面の傷や微細孔を削り取っておくことにより、化学研磨工程後の第１のガラス基板表面に存在するディンプルの平均径を２００μｍ以下、好ましくは５０μｍ以下に抑制することができる。なお、本発明のディンプルの平均径とはディンプルの直径を意味する。 The first glass substrate mechanical polishing step (S2) is performed before the chemical polishing step (S4), which will be described later, and the scratches and micropores on the surface of the first glass substrate on which the TFT layer has been formed in advance are removed. The average diameter of the dimples existing on the surface of the first glass substrate after the polishing step can be suppressed to 200 μm or less, preferably 50 μm or less. The average diameter of the dimple of the present invention means the diameter of the dimple.
本発明の液晶パネル研磨方法における第１ガラス基板機械研磨工程で、ＴＦＴ層を形成した第１のガラス基板表面を研磨する理由としては、ディンプルの発生に伴う表示不良が、ＴＦＴ層を形成した第１のガラス基板表面に発生したディンプルによるところが多いためである。 The reason for polishing the surface of the first glass substrate on which the TFT layer has been formed in the first glass substrate mechanical polishing step in the liquid crystal panel polishing method of the present invention is that display defects due to the occurrence of dimples are caused by the fact that the TFT layer is formed. This is because there are many dimples generated on the surface of one glass substrate.
これは、ＴＦＴ層を形成した第１のガラス基板がバックライト側となるため、例えば、ＴＦＴ層を形成した第１のガラス基板表面のディンプルが凹レンズの役割を果たし、これにバックライトからの光が乱反射して拡散し、輝点等の表示不良となることが考慮されるためである。 This is because the first glass substrate on which the TFT layer is formed is on the backlight side, for example, dimples on the surface of the first glass substrate on which the TFT layer is formed serve as a concave lens, and light from the backlight is added to this. This is because it is considered that the light is diffusely reflected and diffused, resulting in display defects such as bright spots.
従って、本発明におけるＴＦＴ層を形成した第１のガラス基板表面を機械研磨する第１ガラス基板機械研磨工程（Ｓ２）は特に重要な工程である。
＜第１残渣処理工程（Ｓ３）＞
本発明の液晶パネル研磨方法では、第１ガラス基板機械研磨工程（Ｓ２）の次に、第１残渣処理工程（Ｓ３）を行う。
Therefore, the first glass substrate mechanical polishing step (S2) for mechanically polishing the surface of the first glass substrate on which the TFT layer is formed in the present invention is a particularly important step.
<First residue treatment step (S3)>
In the liquid crystal panel polishing method of the present invention, the first residue treatment step (S3) is performed after the first glass substrate mechanical polishing step (S2).
この第１残渣処理工程（Ｓ３）は、研磨後の研磨ガラス粉や研磨材の除去及び、第２ガラス基板表面に発生する研磨材の固着を防止するためのスクラブ処理と、洗浄、乾燥処理からなる工程である。 The first residue treatment step (S3) includes removal of the polished glass powder and abrasive after polishing, scrub treatment for preventing the abrasive from sticking to the surface of the second glass substrate, cleaning, and drying treatment. It is a process.
スクラブ処理の条件は、研磨ガラス粉や研磨材が除去できれば特に制限はないが、例えば、液晶パネルの上下面を、研磨材として炭酸カルシウム又は酸化セリウム等を用い、材質がＰＶＡ（ポリビニルアルコール）等のディスクスポンジを用いて行うことができる。 The scrubbing conditions are not particularly limited as long as the polishing glass powder or the abrasive can be removed. For example, the upper and lower surfaces of the liquid crystal panel are made of calcium carbonate or cerium oxide as the abrasive, and the material is PVA (polyvinyl alcohol) or the like. The disc sponge can be used.
また、洗浄は、例えば、材質がナイロン等のロールブラシを用いて水により行うことができる。 The cleaning can be performed with water using a roll brush made of nylon or the like.
また、乾燥は、例えば、材質がＰＶＡ（ポリビニルアルコール）スポンジ等の脱水ロール及び、エアナイフ、温風乾燥機等を用いて行うことができる。 The drying can be performed using, for example, a dewatering roll whose material is PVA (polyvinyl alcohol) sponge, an air knife, a hot air dryer, or the like.
この第１残渣処理工程（Ｓ３）を行うことにより、液晶パネルのＴＦＴ側表面に、ディンプルの原因となる傷や微細孔及び、研磨に伴う残渣のない清浄な液晶パネルとすることができる。
＜化学研磨工程（Ｓ４）＞
次に、化学研磨工程（Ｓ４）を行う。この化学研磨工程（Ｓ４）は、液晶パネルを薄くするために一般に行われる化学研磨法により行うことができる。
By performing this first residue treatment step (S3), it is possible to obtain a clean liquid crystal panel free from flaws and fine holes that cause dimples on the TFT side surface of the liquid crystal panel and residues resulting from polishing.
<Chemical polishing step (S4)>
Next, a chemical polishing step (S4) is performed. This chemical polishing step (S4) can be performed by a chemical polishing method generally performed for thinning the liquid crystal panel.
この化学研磨方法では、液晶パネル全体を研磨液に浸漬して、第１及び第２のガラス基板表面の研磨を行う。研磨液としては、通常化学研磨で用いられるフッ酸等を挙げることができ、研磨条件は、最終的な液晶パネルの厚さを考慮して適宜設定することができる。 In this chemical polishing method, the entire liquid crystal panel is immersed in a polishing liquid to polish the surfaces of the first and second glass substrates. Examples of the polishing liquid include hydrofluoric acid and the like that are usually used in chemical polishing, and the polishing conditions can be appropriately set in consideration of the final thickness of the liquid crystal panel.
また、化学研磨後は、研磨液の除去を目的とする洗浄及び乾燥工程を行う。
＜反応生成物除去工程（Ｓ５）＞
次に、本発明の液晶パネルの研磨方法では、化学研磨工程（Ｓ４）で発生して固着した反応生成物を除去することを目的として反応生成物除去工程（Ｓ５）を行う。
In addition, after chemical polishing, a cleaning and drying process for removing the polishing liquid is performed.
<Reaction Product Removal Step (S5)>
Next, in the method for polishing a liquid crystal panel according to the present invention, the reaction product removing step (S5) is performed for the purpose of removing the reaction product generated and fixed in the chemical polishing step (S4).
化学研磨工程で発生する反応生成物は、通常、化学研磨で研磨液として用いられるフッ酸と、研磨液により研磨された液晶パネルの材料成分が反応して生成する物質である。 The reaction product generated in the chemical polishing step is usually a substance generated by a reaction between hydrofluoric acid used as a polishing liquid in chemical polishing and a material component of a liquid crystal panel polished by the polishing liquid.
反応生成物の原因となる液晶パネルの材料成分は、ガラス組成中に含まれるＡｌ、Ｃａ、Ｍｇ、Ｓｒ等の物質のほか、液晶パネルの縁部のシール材や基板、ガラスと基板の間の接着剤成分等であり、具体的な反応生成物としては、例えば、フッ化アルミ（ＡｌＦ３）、フッ化マグネシウム（ＭｇＦ２）、フッ化カルシウム（ＣａＦ２）、フッ化ケイ素（ＳｉＦ４）等の無機フッ化物や、無機・有機複合物等が挙げられる。また、研磨液に溶解したケイ素（Ｓｉ）等がガラス基板上に再固着したものも含まれる。 In addition to substances such as Al, Ca, Mg, and Sr contained in the glass composition, the material components of the liquid crystal panel that cause reaction products include the sealing material and substrate at the edge of the liquid crystal panel, and between the glass and the substrate. Specific examples of reaction products such as adhesive components include aluminum fluoride (AlF 3 ), magnesium fluoride (MgF 2 ), calcium fluoride (CaF 2 ), silicon fluoride (SiF 4 ), and the like. Inorganic fluorides, and inorganic / organic composites. Further, silicon (Si) or the like dissolved in the polishing liquid is re-adhered on the glass substrate.
これらの、ガラス基板表面に固着した反応生成物は、表示不良やタッチパネルの不具合の原因となるものである。 These reaction products fixed to the glass substrate surface cause display defects and touch panel defects.
この反応生成物除去工程（Ｓ５）は、第１ガラス基板及び第２ガラス基板の両表面に対して行うものである。 This reaction product removal step (S5) is performed on both surfaces of the first glass substrate and the second glass substrate.
反応生成物除去工程（Ｓ５）の条件としては、反応生成物が完全に除去できれば特に制限はないが、スクラブ処理は、例えば、研磨材として炭酸カルシウム又は酸化セリウム等と、材質がＰＶＡ（ポリビニルアルコール）等のディスクスポンジを用いて行うことができる。 Conditions for the reaction product removal step (S5) are not particularly limited as long as the reaction product can be completely removed, but the scrub treatment is, for example, calcium carbonate or cerium oxide as an abrasive, and the material is PVA (polyvinyl alcohol). ) Or the like.
また、洗浄は、例えば、材質がナイロン等のロールブラシを用いて水により行うことができる。 The cleaning can be performed with water using a roll brush made of nylon or the like.
また乾燥は、例えば、材質がＰＶＡ（ポリビニルアルコール）スポンジ等の脱水ロール及び、エアナイフ、温風乾燥機等を用いて行うことができる。 The drying can be performed using, for example, a dehydrating roll whose material is PVA (polyvinyl alcohol) sponge, an air knife, a hot air dryer or the like.
この反応生成物除去工程（Ｓ５）を行うことにより、液晶パネル全体にディンプルのない、清浄な液晶パネルを製造することができる。 By performing this reaction product removal step (S5), a clean liquid crystal panel having no dimples in the entire liquid crystal panel can be manufactured.
次に、本発明の液晶パネル研磨方法の他の実施形態を、図３のフロー図を用いて詳細に説明する。 Next, another embodiment of the liquid crystal panel polishing method of the present invention will be described in detail with reference to the flowchart of FIG.
この実施形態の液晶パネル研磨方法では、面取工程（Ｓ１）、第１ガラス基板機械研磨工程（Ｓ２）、第１残渣処理工程（Ｓ３）、化学研磨工程（Ｓ４）、第２ガラス基板機械研磨工程（Ｓ６）、第２残渣処理工程（Ｓ７）を有している。 In the liquid crystal panel polishing method of this embodiment, the chamfering step (S1), the first glass substrate mechanical polishing step (S2), the first residue treatment step (S3), the chemical polishing step (S4), and the second glass substrate mechanical polishing. It has a process (S6) and the 2nd residue processing process (S7).
この実施形態において、面取工程（Ｓ１）から化学研磨工程（Ｓ４）の各工程は、先に説明した図２に示す実施形態の面取工程（Ｓ１）から化学研磨工程（Ｓ４）の工程と同様の工程であるためその説明を省略する。
＜第２ガラス基板機械研磨工程（Ｓ６）＞
本発明の液晶パネル研磨方法では、液晶パネルのＣＦ層を形成した第２のガラス基板表面に発生の可能性のあるディンプルの除去することを目的として第２ガラス基板機械研磨工程（Ｓ６）を行うことができる。
In this embodiment, the steps from the chamfering step (S1) to the chemical polishing step (S4) are the same as the steps from the chamfering step (S1) to the chemical polishing step (S4) of the embodiment shown in FIG. Since it is the same process, the description is abbreviate | omitted.
<Second glass substrate mechanical polishing step (S6)>
In the liquid crystal panel polishing method of the present invention, the second glass substrate mechanical polishing step (S6) is performed for the purpose of removing dimples that may occur on the surface of the second glass substrate on which the CF layer of the liquid crystal panel is formed. be able to.
この第２ガラス基板機械研磨工程（Ｓ６）では、第１ガラス基板機械研磨工程（Ｓ２）で用いる研磨機と同様の自動機械研磨機を好適に用いて行うことができる。研磨条件としては、例えば、材質が発泡ポリウレタン等の研磨パッド及び、材質が酸化セリウム等の研磨材を用いて行うことができる。 In the second glass substrate mechanical polishing step (S6), an automatic mechanical polishing machine similar to the polishing machine used in the first glass substrate mechanical polishing step (S2) can be suitably used. As a polishing condition, for example, a polishing pad made of foamed polyurethane or the like and a polishing material made of cerium oxide or the like can be used.
上記のように、第２ガラス基板機械研磨工程（Ｓ６）を化学研磨工程（Ｓ４）の後に行うことにより、化学研磨工程後の第２のガラス基板表面に存在するディンプルの平均径を５０μｍ以下、好ましくは３０μｍ以下に抑制することができる。
＜第２残渣処理工程（Ｓ７）＞
本発明の液晶パネル研磨方法では、第２ガラス基板機械研磨工程（Ｓ６）の次に、第２残渣処理工程（Ｓ７）を行う。
As described above, by performing the second glass substrate mechanical polishing step (S6) after the chemical polishing step (S4), the average diameter of the dimples existing on the surface of the second glass substrate after the chemical polishing step is 50 μm or less, Preferably, it can be suppressed to 30 μm or less.
<Second residue treatment step (S7)>
In the liquid crystal panel polishing method of the present invention, the second residue processing step (S7) is performed after the second glass substrate mechanical polishing step (S6).
この第２残渣処理工程（Ｓ７）は、第２ガラス基板機械研磨工程（Ｓ６）により生じた研磨後の研磨ガラス粉や研磨材の除去とともに、化学研磨工程（Ｓ４）で発生して固着した反応生成物の除去を目的とする反応生成物除去工程を含む工程であり、スクラブ処理と、洗浄、乾燥処理からなる工程である。 This second residue treatment step (S7) is a reaction that is generated and fixed in the chemical polishing step (S4) along with the removal of the polished glass powder and polishing material after polishing generated in the second glass substrate mechanical polishing step (S6). This is a process including a reaction product removing process for the purpose of removing the product, and is a process comprising a scrub process, a washing process and a drying process.
この第２残渣処理工程（Ｓ７）は、第１ガラス基板及び第２ガラス基板の両表面に対して行うものである。 This second residue treatment step (S7) is performed on both surfaces of the first glass substrate and the second glass substrate.
スクラブ処理は、研磨ガラス粉、研磨材及び反応生成物が除去できれば特に制限はないが、例えば、研磨材として炭酸カルシウム又は酸化セリウム等を用い、材質がＰＶＡ（ポリビニルアルコール）等のディスクスポンジを用いて行うことができる。 The scrubbing treatment is not particularly limited as long as the polishing glass powder, the abrasive and the reaction product can be removed. Can be done.
また、洗浄は、例えば、材質がナイロン等のロールブラシを用いて水により行うことができる。 The cleaning can be performed with water using a roll brush made of nylon or the like.
また乾燥は、例えば、材質がＰＶＡ（ポリビニルアルコール）スポンジ等の脱水ロール及び、エアナイフ、温風乾燥機等を用いて行うことができる。 The drying can be performed using, for example, a dehydrating roll whose material is PVA (polyvinyl alcohol) sponge, an air knife, a hot air dryer or the like.
この第２残渣処理工程（Ｓ７）を行うことにより、研磨ガラス粉、研磨材及び、反応生成物を除去することができ、液晶パネル表面に残渣のない、清浄な液晶パネルを製造することができる。 By performing this second residue treatment step (S7), the polishing glass powder, the abrasive and the reaction product can be removed, and a clean liquid crystal panel having no residue on the surface of the liquid crystal panel can be produced. .
以上、実施形態に基づき本発明の液晶パネル研磨方法を説明したが、本発明は上記の実施形態に何ら限定されるものではなく、その要旨を逸脱しない範囲内において各種の変更が可能である。 The liquid crystal panel polishing method of the present invention has been described above based on the embodiments. However, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the present invention.
例えば、上記の実施形態では、第１ガラス基板機械研磨工程（Ｓ２）において、ＴＦＴ層を形成した第１のガラス基板表面のみを機械研磨しているが、この工程でＴＦＴ層を形成した第１のガラス基板表面とＣＦ層を形成した第２のガラス基板表面を同時に、又は片面ずつ別々に機械研磨するようにしてもよい。 For example, in the above embodiment, only the surface of the first glass substrate on which the TFT layer is formed is mechanically polished in the first glass substrate mechanical polishing step (S2), but the first layer on which the TFT layer is formed in this step. The glass substrate surface and the second glass substrate surface on which the CF layer is formed may be mechanically polished simultaneously or separately on each side.
例えば、面取工程（Ｓ１）を化学研磨工程（Ｓ４）の後に行なうことで化学研磨工程（Ｓ４）によって損なわれる液晶パネルのコーナー部および側面部の強度を向上させることができる。 For example, by performing the chamfering step (S1) after the chemical polishing step (S4), the strength of the corner portion and the side portion of the liquid crystal panel damaged by the chemical polishing step (S4) can be improved.
また、上記の実施形態では、本発明の液晶パネル研磨方法に好適に対応可能な液晶パネルをＧ５（１２００ｍｍ×１０００ｍｍ）程度のサイズとして説明したが、当然にＧ５以下のパネルサイズ（Ｇ１（４００ｍｍ×３００ｍｍ）からＧ４.５（９２０ｍｍ×７３０ｍｍ）のものも対応可能であり、また、Ｇ５.５（１５００ｍｍ×１３００ｍｍ）以上のサイズについても対応可能である。 In the above embodiment, the liquid crystal panel that can be suitably applied to the liquid crystal panel polishing method of the present invention has been described as having a size of about G5 (1200 mm × 1000 mm). Naturally, a panel size of G5 or smaller (G1 (400 mm × 300 mm) to G4.5 (920 mm × 730 mm) can also be handled, and G5.5 (1500 mm × 1300 mm) or larger sizes can also be handled.
１ 第１のガラス基板
１１ ＴＦＴ層
１２ 表面
２ 第２のガラス基板
２１ ＣＦ層
２２ 表面
３ 液晶部材
３１ スペーサー
４ シール材
Ｓ１ 面取工程
Ｓ２ 第１ガラス基板機械研磨工程
Ｓ３ 第１残渣処理工程
Ｓ４ 化学研磨工程
Ｓ５ 反応生成物液除去工程
Ｓ６ 第２ガラス基板機械研磨工程
Ｓ７ 第２残渣処理工程
DESCRIPTION OF
Claims (2)
前記化学研磨工程の前に、前記液晶パネルの前記第１及び第２のガラス基板のコーナー部及び側面部のエッジ部の面取りを行う面取工程と、
前記化学研磨工程後の前記第１のガラス基板表面に存在するディンプルの平均径が２００μｍ以下となるように、前記第１のガラス基板の機械研磨を行う第１ガラス基板機械研磨工程と、
前記第１ガラス基板機械研磨工程の後に、前記液晶パネル表面の残渣を除去する第１残渣処理工程と、
前記第１残渣処理工程の後に、前記第１のガラス基板と前記第２のガラス基板の表面を化学研磨する前記化学研磨工程と、
前記化学研磨工程の後に、前記第２のガラス基板表面に存在するディンプルの平均径が５０μｍ以下となるように、前記第２のガラス基板の機械研磨を行う第２ガラス基板機械研磨工程と、
前記第２ガラス基板機械研磨工程の後に、前記液晶パネル表面の残渣及び、前記化学研磨工程で発生した反応生成物を除去する第２残渣処理工程を有することを特徴とする液晶パネル研磨方法。 At least chemical polishing is performed on the surface of the liquid crystal panel in which the liquid crystal member is sandwiched between the first glass substrate on the backlight side on which the thin film transistor layer is formed and the second glass substrate on which the color filter layer is formed. In a liquid crystal panel polishing method having a chemical polishing step ,
Before the chemical polishing step, the chamfered step for chamfering the edge portion of the corner portions and side portions of the first and second glass substrates of the liquid crystal panel,
A first glass substrate mechanical polishing step for mechanically polishing the first glass substrate such that an average diameter of dimples existing on the surface of the first glass substrate after the chemical polishing step is 200 μm or less ;
After the first glass substrate mechanical polishing step, a first residue treatment step of removing residues on the liquid crystal panel surface ;
The chemical polishing step of chemically polishing the surfaces of the first glass substrate and the second glass substrate after the first residue treatment step;
A second glass substrate mechanical polishing step for mechanically polishing the second glass substrate so that an average diameter of dimples existing on the surface of the second glass substrate is 50 μm or less after the chemical polishing step;
A liquid crystal panel polishing method comprising a second residue treatment step of removing residues on the liquid crystal panel surface and reaction products generated in the chemical polishing step after the second glass substrate mechanical polishing step .
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| JP2012267640A JP6109551B2 (en) | 2012-12-06 | 2012-12-06 | Liquid crystal panel polishing method |
| KR1020130144288A KR20140073422A (en) | 2012-12-06 | 2013-11-26 | Method for grinding liquid crystal panel |
| TW102144350A TWI585489B (en) | 2012-12-06 | 2013-12-04 | Method of polishing liquid crystal display panels |
| CN201310651957.8A CN103846782A (en) | 2012-12-06 | 2013-12-05 | Method for grinding liquid crystal panel |
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| JP6822219B2 (en) * | 2017-03-01 | 2021-01-27 | Ａｇｃ株式会社 | Glass substrate for display |
| CN107608105A (en) * | 2017-08-30 | 2018-01-19 | 广东深越光电技术有限公司 | A kind of liquid crystal display die set that can increase effective display area |
| CN110076681B (en) * | 2018-09-12 | 2021-03-19 | 滁州盛诺电子科技有限公司 | Grinding treatment process for liquid crystal display screen |
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