JP5448031B2 - Etching method and etching apparatus for glass substrate - Google Patents

Etching method and etching apparatus for glass substrate Download PDF

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JP5448031B2
JP5448031B2 JP2008313244A JP2008313244A JP5448031B2 JP 5448031 B2 JP5448031 B2 JP 5448031B2 JP 2008313244 A JP2008313244 A JP 2008313244A JP 2008313244 A JP2008313244 A JP 2008313244A JP 5448031 B2 JP5448031 B2 JP 5448031B2
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glass substrate
polishing
glass
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liquid crystal
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JP2010138000A (en
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岩夫 住母家
健太 森本
秀己 佐藤
正治 板倉
克美 小原
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Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
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Japan Display Inc
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Description

本発明は、液晶ディスプレイに使用されるガラス基板をエッチングによって薄板化する際に、ガラス表面に傷などの欠陥が発生するのを抑制可能なガラス基板のエッチング方法及びエッチング装置に関する。   The present invention relates to a glass substrate etching method and an etching apparatus capable of suppressing the occurrence of defects such as scratches on a glass surface when a glass substrate used in a liquid crystal display is thinned by etching.

近年、液晶ディスプレイやプラズマディスプレイをはじめとする様々なフラットパネルデイスプレイが製造されている。この製造工程では、基板寸法が概ね1200×1000×0.4mmなる大きさのガラス基板をマザーガラス基板として使用し、この中に複数の液晶表示パネル基板を形成する。しかしながら、モバイルや携帯端末等の用途に使用される液晶ディスプレイでは小形・軽量化のニーズが著しく、製品として要求される液晶表示パネルのガラス基板の厚さが一般に0.2mm以下と言われている。従って、液晶ディスプレイの生産においては、マザーガラス基板を研磨等の手段を用いて所望の厚さに薄板化することが必要である。   In recent years, various flat panel displays such as liquid crystal displays and plasma displays have been manufactured. In this manufacturing process, a glass substrate having a substrate size of approximately 1200 × 1000 × 0.4 mm is used as a mother glass substrate, and a plurality of liquid crystal display panel substrates are formed therein. However, liquid crystal displays used for applications such as mobile devices and portable terminals have a significant need for downsizing and weight reduction, and it is generally said that the glass substrate thickness of a liquid crystal display panel required as a product is 0.2 mm or less. . Therefore, in the production of a liquid crystal display, it is necessary to thin the mother glass substrate to a desired thickness using means such as polishing.

一般にガラスを薄くするには、薄い板ガラスを作ればよいが、薄い板ガラスの製造自体にも限界がある。そこで、機械的な研磨により薄くし、かつ、所望の精度に仕上げることが行われている。   In general, in order to make the glass thin, it is only necessary to make a thin plate glass, but there is a limit to the production of the thin plate glass itself. Therefore, it is thinned by mechanical polishing and finished to a desired accuracy.

このような目的で行うガラスの研磨は、従来、400番程度のダイヤモンドの砥粒による粗研磨、800番程度のアルミナ砥粒やジルコニアによる一次研磨、1200番程度のアルミナ砥粒やジルコニアによる二次研磨、と経て最後に8000番のセリウム砥粒により仕上げ研磨をする4工程となっている。   The glass polishing performed for such a purpose has been conventionally performed by rough polishing with about 400 diamond grains, primary polishing with about 800 alumina grains or zirconia, or secondary with about 1200 alumina grains or zirconia. After the polishing, the final polishing is performed with 8000th cerium abrasive grains.

このうち、仕上げ研磨以外の3工程は、研削であり、ガラス表面を削っている。ガラス表面に傷をつけて削るので、砥粒としては、ダイヤモンド、ジルコニア、アルミナ等の固い研磨材を使用する。最後の仕上げ研磨は、別名「傷取り研磨」と呼ばれ、前工程までの研削傷を取り、ガラス表面を鏡面状にする工程である。   Among these, three processes other than finish polishing are grinding and are shaving the glass surface. Since the glass surface is scratched and cut, a hard abrasive such as diamond, zirconia, or alumina is used as the abrasive. The final finish polishing is also called “scratch removal polishing”, and is a step of removing grinding scratches up to the previous step and making the glass surface a mirror surface.

上記の機械研磨では、二次研磨までにできた研削傷が仕上げ研磨で除去できずに割れや表面キズとして残るものがあるという研磨能力の限界などの問題がある。また、工数が多く時間が掛かり、非能率的である。   In the above-mentioned mechanical polishing, there is a problem such as a limit of the polishing ability in that there is a scratch or surface flaw that cannot be removed by the final polishing but remains as a crack or surface flaw. In addition, it takes a lot of man-hours, takes time, and is inefficient.

これに対し、特許文献1(特許第2722798号)では、液晶表示パネル複数個分のガラス基板を、各素子区画の液晶封入領域をシーリング材で封止して、フッ酸を含む薬液内に浸漬してガラス基板の外表面を溶かすことで薄くする化学処理方法を提案している。   On the other hand, in Patent Document 1 (Japanese Patent No. 2722798), a plurality of glass substrates for liquid crystal display panels are immersed in a chemical solution containing hydrofluoric acid by sealing the liquid crystal enclosing region of each element section with a sealing material. And the chemical processing method which makes thin by melt | dissolving the outer surface of a glass substrate is proposed.

また、特許文献2(特開2003−40649号)では、フッ酸を含む薬液の貯溜槽の底部から気泡を伴なう薬液の上昇水流を発生させ、この加工液中にガラス基板を浸漬して、ガラス基板の外表面を溶かして薄くするものである。この方法によれば、常に新しい薬液がガラス基板表面に供給されるため、エッチングが促進される。   Moreover, in patent document 2 (Unexamined-Japanese-Patent No. 2003-40649), the ascending water flow of the chemical | medical solution accompanied by a bubble is generated from the bottom part of the storage tank of the chemical | medical solution containing a hydrofluoric acid, and a glass substrate is immersed in this process liquid. The outer surface of the glass substrate is melted and thinned. According to this method, since a new chemical solution is always supplied to the glass substrate surface, etching is promoted.

しかし、特許文献1や特許文献2に記載された技術には次のような問題がある。ガラスの表面には、肉眼では見えない小さな傷がある。各傷は溝状や半球形の凹部となっているが、このような凹部ができたガラスを特許文献1や特許文献2に記載された方法でエッチングすると、薬液が凹部を集中的に溶かし、凹部の幅と深さが共に数倍の大きな凹部になってしまう。   However, the techniques described in Patent Document 1 and Patent Document 2 have the following problems. There are small scratches on the surface of the glass that are not visible to the naked eye. Each scratch is a groove-like or hemispherical recess, but when the glass with such a recess is etched by the method described in Patent Document 1 or Patent Document 2, the chemical solution intensively dissolves the recess, Both the width and depth of the recess become a large recess several times larger.

この問題に対し、特許文献3(特開2003−15111号)では、薬液によるエッチングが完了した後、機械研磨により微小欠陥を除去する方法を提案している。
特許第2722798号 特開2003−40649号 特開2003−15111号
To deal with this problem, Patent Document 3 (Japanese Patent Laid-Open No. 2003-15111) proposes a method of removing minute defects by mechanical polishing after etching with a chemical solution is completed.
Japanese Patent No. 2722798 JP 2003-40649 A JP 2003-15111 A

しかし、この特許文献3の方法は、化学研磨と機械研磨の2つの研磨工程を必要とし、大掛かりな設備上の制約やパネルの生産コストアップにつながるという問題があった。   However, the method of Patent Document 3 requires two polishing steps, that is, chemical polishing and mechanical polishing, and has a problem that it leads to significant equipment restrictions and an increase in panel production cost.

本発明は、このような問題の解決を図ったもので、化学研磨だけで液晶表示パネル用のガラス基板の傷を縮小することができるガラス基板のエッチング方法と、ガラス基板のエッチング装置とを提供することを目的としている。   The present invention has been made to solve such problems, and provides a glass substrate etching method and a glass substrate etching apparatus capable of reducing scratches on a glass substrate for a liquid crystal display panel only by chemical polishing. The purpose is to do.

上記の問題を解決するために、本発明のガラス基板のエッチング方法は、複数個の液晶表示パネルの大きさの第1のガラス基板と、該第1のガラス基板と同じ大きさの第2のガラス基板とを相互に離間するようにシール材を介して貼り合わせ、前記一対のガラス基板の少なくとも一方のガラス基板の外面を研磨力の小さいガラス基板用化学研磨液によって薄板化研磨する第1研磨工程と、前記薄板化研磨したガラス基板を、研磨力の大きいガラス基板用化学研磨液によって薄板化研磨する第2研磨工程と、を有することを特徴としている。   In order to solve the above problem, a glass substrate etching method of the present invention includes a first glass substrate having a size of a plurality of liquid crystal display panels and a second glass substrate having the same size as the first glass substrate. First polishing for laminating and polishing the outer surface of at least one glass substrate of the pair of glass substrates with a chemical polishing liquid for glass substrate having a small polishing power, and bonding the glass substrates to each other via a sealing material so as to be separated from each other. And a second polishing step of thinning and polishing the thinned and polished glass substrate with a glass substrate chemical polishing liquid having a high polishing power.

前記第1研磨工程に使用する研磨力の小さいガラス基板用化学研磨液が、フッ酸5〜10重量%とフッ化アンモニウムを5〜13重量%、残余が水からなる構成としたり、前記第1のガラス基板に複数の液晶表示パネルに対応した薄膜トランジスタ素子を形成し、前記第2のガラス基板に複数の液晶表示パネルに対応したカラーフィルタ素子を形成し、一対のガラス基板間の空間が前記シール材によって各液晶表示パネルに対応して分割されており、前記第1と第2のガラス基板の少なくとも一方のガラス基板の外面を薄板化研磨した後、前記第1と第2のガラス基板を、個々の液晶表示パネルに個片化切断する構成としたり、前記第1研磨工程で、ガラス基板の厚さを30μm±10μm研磨し、前記第2研磨工程でガラス基板の厚さが所望の厚さになるまで研磨する構成としたりしてもよい。   The chemical polishing liquid for glass substrate having a small polishing force used in the first polishing step is configured to comprise 5 to 10% by weight of hydrofluoric acid, 5 to 13% by weight of ammonium fluoride, and the balance of water. A thin film transistor element corresponding to a plurality of liquid crystal display panels is formed on the glass substrate, a color filter element corresponding to the plurality of liquid crystal display panels is formed on the second glass substrate, and a space between a pair of glass substrates is the seal The material is divided corresponding to each liquid crystal display panel, and after thinning and polishing the outer surface of at least one of the first and second glass substrates, the first and second glass substrates, Individual liquid crystal display panels are cut into individual pieces, or the glass substrate is polished by 30 μm ± 10 μm in the first polishing step, and the glass substrate thickness is desired in the second polishing step. It may be or is configured to be polished to a thickness.

本発明のガラス基板のエッチング装置は、複数個の液晶表示パネルの大きさの第1のガラス基板と、該第1のガラス基板と同じ大きさの第2のガラス基板とを相互に離間するようにシール材を介して貼り合わせたガラス基板対を収容する空間と、該空間内に入れられた研磨力の小さいガラス基板用化学研磨液と、を有する第1の液槽と、前記第1と第2のガラス基板を貼り合わせたガラス基板対を収容する空間と、該空間内に入れられた研磨力の大きいガラス基板用化学研磨液とを有する第2の液槽と、を有することを特徴としている。   The glass substrate etching apparatus according to the present invention separates a first glass substrate having a size of a plurality of liquid crystal display panels and a second glass substrate having the same size as the first glass substrate from each other. A first liquid tank having a space for accommodating a pair of glass substrates bonded to each other through a sealing material, and a chemical polishing liquid for glass substrate having a small polishing power, which is put in the space; A second liquid tank having a space for accommodating a glass substrate pair to which the second glass substrate is bonded, and a chemical polishing liquid for glass substrate having a high polishing power, which is placed in the space. It is said.

前記第1の液槽と第2の液槽により研磨の後に、ガラス基板を洗浄するためのリンス用液槽を設けた構成としたり、前記第1の液槽内の研磨力の小さいガラス基板用化学研磨液が、フッ酸5〜10重量%とフッ化アンモニウムを5〜13重量%、残余が水からなる構成としたりすることができる。   After polishing by the first liquid tank and the second liquid tank, a rinsing liquid tank for cleaning the glass substrate is provided, or for a glass substrate having a small polishing power in the first liquid tank. The chemical polishing liquid may be composed of 5 to 10% by weight of hydrofluoric acid, 5 to 13% by weight of ammonium fluoride, and the balance of water.

ガラス基板の薄板化のための第1研磨工程では研磨力の小さいガラス基板用化学研磨液を用いて行われる。研磨力の小さい化学研磨液の一例としては、フッ酸5〜10重量%、フッ化アンモニウム5〜13重量%、残余は水からなる化学研磨液がある。この研磨力の小さい化学研磨液によると、ガラス表面の傷は、以下のように研磨されることになる。   The first polishing step for thinning the glass substrate is performed using a chemical polishing liquid for glass substrate having a low polishing power. As an example of a chemical polishing liquid having a small polishing power, there is a chemical polishing liquid consisting of 5 to 10% by weight of hydrofluoric acid, 5 to 13% by weight of ammonium fluoride, and the balance being water. According to the chemical polishing liquid having a small polishing power, the scratches on the glass surface are polished as follows.

ガラスの表面は、研磨力の小さい化学研磨液中に浸漬されて研磨が開始されるが、ガラス表面に傷があると、この傷の凹部に化学研磨液が入り、ガラス表面と同時に、凹部の底面も研磨される。化学研磨液がガラスを研磨すると、化学研磨液とガラスとが反応しゲル状のフッ化物ができる。このフッ化物は凹部の底面を膜のように覆い、新しい化学研磨液のガラスの表面への接触が制限される。このとき化学研磨液の研磨力が大きいと、フッ化物の膜を通して化学研磨が行われ、凹部の底面が研磨されて、凹部が深く、幅も大きくなり、結果的にガラスの表面の凹凸が大きくなってしまう。しかし、本発明では、化学研磨液の研磨力が小さいので、傷などの凹部内では、化学研磨が大きく鈍化する。一方、凹部の外側は平面であり、凹部内と同様にガラスと化学研磨液が反応してフッ化物が発生するが、平面なのでフッ化物は移動し易く、ガラス表面から離れ、化学研磨液により引き続いてガラス面の研磨をすることができる。したがって、ガラス板は、平面部分から先に研磨が進むことになり、傷などの凹部は、だんだん浅くなって、ガラス板の平坦度が向上する。   The surface of the glass is immersed in a chemical polishing liquid having a low polishing power and polishing starts. However, if there is a scratch on the glass surface, the chemical polishing liquid enters the concave portion of the scratch, and simultaneously with the glass surface, The bottom is also polished. When the chemical polishing liquid polishes the glass, the chemical polishing liquid and the glass react to form a gel-like fluoride. This fluoride covers the bottom of the recess like a film, and the contact of the new chemical polishing liquid to the glass surface is limited. At this time, if the polishing power of the chemical polishing liquid is large, chemical polishing is performed through the fluoride film, the bottom surface of the recess is polished, the recess is deep, the width is increased, and as a result, the unevenness of the glass surface is increased. turn into. However, in the present invention, since the polishing power of the chemical polishing liquid is small, the chemical polishing is greatly slowed down in the recesses such as scratches. On the other hand, the outside of the recess is a flat surface, and the glass and chemical polishing liquid react to generate fluoride as in the recess, but the fluoride is easy to move because of the flat surface, and it is separated from the glass surface and continued by the chemical polishing liquid. The glass surface can be polished. Therefore, the glass plate is polished first from the plane portion, and the concave portions such as scratches become shallower and the flatness of the glass plate is improved.

研磨力の小さい化学研磨液での第1研磨が完了した状態では、凹部が浅くなっており、ガラス基板の表面の平坦度は向上している。しかし、このまま化学研磨を続けても、研磨力が小さいので研磨に時間が掛かる。そこで、次に、研磨力の大きい(通常の研磨力を備えた)化学研磨液により第2研磨を行う。第2研磨は通常のスピードで薄板化の研磨をするが、第2研磨の研磨開始時には、ガラス基板の平坦度が上がっているので、この状態を保って薄板化の研磨が進行し、目的の厚さになった時点で第2研磨が完了することになる。第2研磨が完了すると、ガラス基板は目的の厚さになり、平坦度も目標値を確保できている。   In the state where the first polishing with the chemical polishing liquid having a small polishing power is completed, the concave portion is shallow, and the flatness of the surface of the glass substrate is improved. However, even if chemical polishing is continued as it is, polishing takes time because the polishing power is small. Therefore, next, the second polishing is performed with a chemical polishing liquid having a large polishing power (provided with a normal polishing power). In the second polishing, the thin plate is polished at a normal speed, but at the start of the second polishing, the flatness of the glass substrate is increased, so that the thin plate proceeds while maintaining this state. When the thickness is reached, the second polishing is completed. When the second polishing is completed, the glass substrate has a target thickness, and the flatness can be secured at the target value.

研磨力の小さい化学研磨液は、フッ酸の濃度が5〜10重量%で、フッ化アンモニウムが5〜13重量%であるが、フッ酸の濃度が10重量%を越えるか、または、フッ化アンモニウムの濃度が13重量%を越えると、研磨力が強くなりすぎ、凹部の内面に化合物ができても化学研磨液の研磨力が勝り、凹部の内面が引き続き研磨され、傷が大きくなってしまう。また、化合物が凹部の縁に溜まり、ここの研磨だけを遅らせ、凹部の周縁に突起ができてしまう。   A chemical polishing liquid having a low polishing power has a concentration of hydrofluoric acid of 5 to 10% by weight and ammonium fluoride of 5 to 13% by weight. However, the concentration of hydrofluoric acid exceeds 10% by weight, or fluorination. When the concentration of ammonium exceeds 13% by weight, the polishing power becomes too strong, and even if a compound is formed on the inner surface of the recess, the polishing power of the chemical polishing liquid is superior, and the inner surface of the recess is continuously polished, resulting in larger scratches. . Also, the compound accumulates at the edge of the recess, delaying only the polishing here, and forming a protrusion on the periphery of the recess.

反対に、化学研磨液のフッ酸の濃度が5重量%未満になるか、フッ化アンモニウムの濃度が5重量%未満のいずれかになると、研磨力が弱すぎて、研磨時間が掛かり過ぎることになる。   On the other hand, if the concentration of hydrofluoric acid in the chemical polishing solution is less than 5% by weight or the concentration of ammonium fluoride is less than 5% by weight, the polishing power is too weak and it takes too much polishing time. Become.

第1研磨でガラス基板の厚さを30μm±10μm研磨すると、ガラス基板の表面にあった傷は殆どなくなる。そして、その後は研磨力の大きい化学研磨液で第2研磨を行っても、平坦度が悪化することはなく、目的の平坦度を保って研磨がされ薄板化される。   When the thickness of the glass substrate is polished by 30 μm ± 10 μm in the first polishing, scratches on the surface of the glass substrate are almost eliminated. Then, even if the second polishing is performed with a chemical polishing liquid having a high polishing power, the flatness is not deteriorated, and the target flatness is maintained and the plate is thinned.

複数の液晶パネルの大きさを有する大きなマザーガラス基板、あるいはこのマザーガラス基板を分割した液晶表示用パネルの外面を、本発明の研磨方法で研磨することにより、液晶表示パネルに必要な平坦度と厚さを持った薄板のガラス基板を安価に提供することが可能になった。また、平坦度が上がるので、液晶表示パネルの表示性能が向上することになる。   By polishing the outer surface of a large mother glass substrate having a size of a plurality of liquid crystal panels or a liquid crystal display panel obtained by dividing the mother glass substrate with the polishing method of the present invention, the flatness necessary for the liquid crystal display panel can be obtained. It has become possible to provide a thin glass substrate having a thickness at low cost. In addition, since the flatness is increased, the display performance of the liquid crystal display panel is improved.

以下、本発明の実施の形態を図面に基づいて詳細に説明する。なお、実施の形態を説明するための全図において同一の機能を有するものは同一の符号を付している。また、ガラス基板用化学研磨液(以下「化学研磨液」と略称する)の組成は、重量%で表記した。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments. The composition of the chemical polishing liquid for glass substrate (hereinafter abbreviated as “chemical polishing liquid”) is expressed in wt%.

先ず、携帯電話やモバイル機器等の液晶表示パネルの製造方法について説明する。図1はその製造工程を説明するための工程フローチャートである。また、図2は第1と第2のガラス基板を貼り合わせ、複数の液晶表示パネルを形成した状態の断面を模式的に示した図で、図3は第1研磨と第2研磨工程を行う研磨装置の構成を模式的に示す図である。   First, a method for manufacturing a liquid crystal display panel of a mobile phone or a mobile device will be described. FIG. 1 is a process flowchart for explaining the manufacturing process. 2 is a diagram schematically showing a cross section in a state where a plurality of liquid crystal display panels are formed by bonding the first and second glass substrates, and FIG. 3 performs the first polishing and the second polishing process. It is a figure which shows the structure of a grinding | polishing apparatus typically.

図1の101工程は、図2に示す第1のガラス基板1(マザーガラス)上に良く知られた薄膜プロセスを用いて薄膜トランジスタ素子3(アレイ)を形成する工程である。第1のガラス基板1は、液晶表示パネル7の複数枚分の大きさを有しており、各液晶表示パネル7に対応した薄膜トランジスタ素子3が、露光、現像、エッチングなどから成るフォトリソグラフィプロセスを繰り返して形成される。その後、形成した薄膜トランジスタ素子3の上に配向膜(図示せず)が形成され、この配向膜上に液晶を配向させるためのラビング処理が施される。一方、102工程は第2のガラス基板2(マザーガラス)上にRGBからなる複数のカラーフィルタ素子4を形成するカラーフィルタ形成工程である。カラーフィルタ素子4の形成は、よく知られた染料塗布法あるいは印刷法が用いられる。   Step 101 in FIG. 1 is a step of forming thin film transistor elements 3 (array) using a well-known thin film process on the first glass substrate 1 (mother glass) shown in FIG. The first glass substrate 1 has a size corresponding to a plurality of liquid crystal display panels 7, and a thin film transistor element 3 corresponding to each liquid crystal display panel 7 performs a photolithography process including exposure, development, etching, and the like. It is formed repeatedly. Thereafter, an alignment film (not shown) is formed on the formed thin film transistor element 3, and a rubbing process for aligning liquid crystal is performed on the alignment film. On the other hand, the step 102 is a color filter forming step of forming a plurality of RGB color filter elements 4 on the second glass substrate 2 (mother glass). The color filter element 4 is formed by a well-known dye coating method or printing method.

次に、第1のガラス基板1もしくは第2のガラス基板2の少なくとも一方のガラス基板上に、個々の薄膜トランジスタ素子3またはカラーフィルタ素子4に対応し、液晶表示パネルを形成する領域であって、液晶が封じ込められる空間6を囲むように製品シール5を、また、第1と第2のガラス基板1、2の外周縁には外周シール(図示せず)を、よく知られたディスペンサによる塗布法やスクリーン印刷法を用いて同時に印刷する。ここでは、ディスペンサによる塗布法を用いた。   Next, on at least one glass substrate of the first glass substrate 1 or the second glass substrate 2, a region corresponding to each thin film transistor element 3 or color filter element 4 and forming a liquid crystal display panel, Application method using a well-known dispenser, a product seal 5 is enclosed so as to surround a space 6 in which liquid crystal is contained, and an outer peripheral seal (not shown) is provided on the outer peripheral edges of the first and second glass substrates 1 and 2. And screen printing at the same time. Here, a coating method using a dispenser was used.

次に、103工程では第1のガラス基板1と第2のガラス基板2とを、図2に示すように、素子形成面同士が対向するように貼り合わせる。この一対のガラス基板で構成されるガラス基板対10を、携帯電話や携帯端末の表示ディスプレイとして使用するためには、少なくとも一方のガラス基板(1または2)の厚さを0.2mm程度に薄板化することが必要である。   Next, in step 103, the first glass substrate 1 and the second glass substrate 2 are bonded together so that the element formation surfaces face each other as shown in FIG. In order to use the glass substrate pair 10 composed of a pair of glass substrates as a display for a mobile phone or a mobile terminal, the thickness of at least one glass substrate (1 or 2) is as thin as about 0.2 mm. It is necessary to make it.

104工程は化学研磨液を用いてガラス基板の厚さを薄くする第1研磨工程で、105工程は、第2研磨工程である。   Step 104 is a first polishing step for reducing the thickness of the glass substrate using a chemical polishing liquid, and step 105 is a second polishing step.

図3は、第1研磨と第2研磨工程を行う研磨装置の構成を模式的に示す図である。研磨装置20は、第1の液槽21と、第2の液槽23とを有し、これらの間に洗浄水Wの入ったリンス用の液槽22と、仕上げ用の液槽24とを有する。   FIG. 3 is a diagram schematically illustrating a configuration of a polishing apparatus that performs the first polishing and the second polishing process. The polishing apparatus 20 includes a first liquid tank 21 and a second liquid tank 23. A rinsing liquid tank 22 containing cleaning water W therebetween and a finishing liquid tank 24 are provided. Have.

第1の液槽21には、研磨力の小さい化学研磨液Aが投入されており、化学研磨液Aを加熱する加熱器と、化学研磨液Aを冷却する冷却器の双方を兼ねた加熱冷却装置21aが設けられている。加熱冷却装置21aは、コイル状の中空パイプで、加熱する場合は中空パイプに温水を通し、冷却する場合は、中空パイプに冷水を通すことで、必要に応じて加熱と冷却を行う。加熱冷却装置21aに代えて加熱装置と冷却装置を別々に設けてもよい。   The first liquid tank 21 is charged with a chemical polishing liquid A having a small polishing power, and is heated and cooled as both a heater for heating the chemical polishing liquid A and a cooler for cooling the chemical polishing liquid A. A device 21a is provided. The heating / cooling device 21a is a coiled hollow pipe. When heated, hot water is passed through the hollow pipe, and when cooled, cold water is passed through the hollow pipe to perform heating and cooling as necessary. Instead of the heating / cooling device 21a, a heating device and a cooling device may be provided separately.

また、第1の液槽21の底部には、撹拌装置21bが設けられている。この撹拌装置21bは、多数の孔の開いた中空パイプで、入口から矢印方向に空気を送り込むと、複数の孔から空気の泡が出て、上方に移動し、化学研磨液を撹拌できるようになっている。   A stirring device 21 b is provided at the bottom of the first liquid tank 21. The stirring device 21b is a hollow pipe having a large number of holes, and when air is fed from the inlet in the direction of the arrow, air bubbles emerge from the plurality of holes and move upward so that the chemical polishing liquid can be stirred. It has become.

第2の液槽23も第1の液槽21と同様な構成で、加熱冷却装置23aと撹拌装置23bを備えている。リンス用の液槽22と仕上げ用の液槽24には、洗浄用の純水を入れている。充分な洗浄が可能ように、純水は常に新しいものを供給できるようにしている。   The 2nd liquid tank 23 is also the same structure as the 1st liquid tank 21, and is provided with the heating cooling device 23a and the stirring apparatus 23b. The rinsing liquid tank 22 and the finishing liquid tank 24 are filled with pure water for cleaning. Pure water is always supplied with fresh water so that it can be cleaned sufficiently.

第1の液槽21内の研磨力の小さい化学研磨液Aは、フッ酸5〜10重量%とフッ化アンモニウムを5〜13重量%、残余が水からなる構成である。望ましくは、フッ酸8±1重量%、フッ化アンモニウム10±1重量%である。本発明の実施例では、フッ酸8重量%、フッ化アンモニウム10重量%で残余は純水とした。温度は25〜50℃でよいが、本発明の実施例では、40℃としている。   The chemical polishing liquid A having a small polishing power in the first liquid tank 21 is composed of 5 to 10% by weight of hydrofluoric acid, 5 to 13% by weight of ammonium fluoride, and the balance being water. Desirably, hydrofluoric acid is 8 ± 1 wt% and ammonium fluoride is 10 ± 1 wt%. In the examples of the present invention, 8% by weight of hydrofluoric acid and 10% by weight of ammonium fluoride were used, and the balance was pure water. The temperature may be 25 to 50 ° C., but in the embodiment of the present invention, it is 40 ° C.

第2の液槽23内の研磨力の大きい化学研磨液Bは、通常、ガラス基板の研磨に使用されるもので、一例を挙げれば、フッ酸20重量%とフッ化アンモニウムを17重量%、酢酸10重量%からなる構成である。温度は第1の液槽21と同じで、25〜50℃でよいが、本発明の実施例では、40℃としている。   The chemical polishing liquid B having a large polishing power in the second liquid tank 23 is usually used for polishing a glass substrate. For example, 20 wt% hydrofluoric acid and 17 wt% ammonium fluoride, The composition consists of 10% by weight acetic acid. The temperature is the same as that of the first liquid tank 21 and may be 25 to 50 ° C., but is 40 ° C. in the embodiment of the present invention.

本発明のガラス基板の研磨方法では、第1の液槽21内に複数枚のガラス基板対10を相互に離間させて化学研磨液Aに浸漬することで薄板化第1研磨が行われる。この実施例では、第1のガラス基板1と第2のガラス基板2の両外面が研磨されるが、第1のガラス基板1もしくは第2のガラス基板2の何れかの薄板化研磨が不要な場合は、保護用のフイルムなどを貼り付ける方式が一般に行われている。   In the method for polishing a glass substrate of the present invention, the first polishing is performed by thinning the plurality of glass substrate pairs 10 in the first liquid tank 21 so as to be separated from each other and immersed in the chemical polishing liquid A. In this embodiment, both outer surfaces of the first glass substrate 1 and the second glass substrate 2 are polished, but thinning polishing of either the first glass substrate 1 or the second glass substrate 2 is unnecessary. In this case, a method of attaching a protective film or the like is generally performed.

図4(a)〜(c)は第1の液槽21内で行われる第1研磨について説明する図で、従来の化学研磨液を使用した場合の研磨の進行状態を示した図である。化学研磨液としてフッ酸20重量%、フッ化アンモニウム17重量%、酢酸10重量%の混合溶液を用いて第1のガラス基板1を化学研磨した状態を示す。化学研磨液の温度は40℃に調節して使用した。   FIGS. 4A to 4C are views for explaining the first polishing performed in the first liquid tank 21 and showing the progress of polishing when a conventional chemical polishing liquid is used. A state in which the first glass substrate 1 is chemically polished using a mixed solution of 20 wt% hydrofluoric acid, 17 wt% ammonium fluoride, and 10 wt% acetic acid as a chemical polishing solution is shown. The temperature of the chemical polishing liquid was adjusted to 40 ° C. for use.

図4(a)に示す第1のガラス基板1は、化学研磨液で外側にある表面(外面)1aが研磨される。第1のガラス基板1には、表面に溝状の凹部1cがある。これは、第1のガラス基板1を製造する際にできたものである。   In the first glass substrate 1 shown in FIG. 4A, the outer surface (outer surface) 1a is polished with a chemical polishing liquid. The first glass substrate 1 has a groove-like recess 1c on the surface. This is made when the first glass substrate 1 is manufactured.

第1のガラス基板1の表面1aは化学研磨液で研磨され、化学研磨液は凹部1c内にも入り、凹部の表面の化学研磨が開始する。そして、化学研磨液とガラスとが反応してゲル状のフッ化物fが発生する。従来の化学研磨液はフッ酸やフッ化アンモニウムの濃度が高く、研磨力が大きいので、フッ化物も多く発生する。発生したフッ化物fは、凹部1cの内部と凹部1cのエッジに集中する。フッ化物fがあると、ガラスの研磨は鈍化するが、従来の化学研磨液は研磨力が大きく、凹部1cの内面では研磨がやや鈍化するが、進行し、凹部1cの深さと幅とが大きくなっていく。一方、凹部1cのエッジ部分には厚いフッ化物fの層ができ、フッ化物fに邪魔され研磨が鈍化し、周囲のガラス表面1aの研磨の方が進行する。その結果、図4(c)のように、凹部1cの周縁に突起1dが形成され、凹部1cの幅が大きくなり、深さも深くなってしまう。   The surface 1a of the first glass substrate 1 is polished with a chemical polishing liquid, and the chemical polishing liquid also enters the recess 1c, and chemical polishing of the surface of the recess starts. Then, the chemical polishing liquid and glass react to generate a gel-like fluoride f. Conventional chemical polishing liquids have high concentrations of hydrofluoric acid and ammonium fluoride, and have high polishing power, so that a large amount of fluoride is generated. The generated fluoride f is concentrated inside the recess 1c and at the edge of the recess 1c. When fluoride f is present, the polishing of the glass is slowed down, but the conventional chemical polishing liquid has a large polishing power, and the polishing is slightly blunted on the inner surface of the recess 1c, but progresses and the depth and width of the recess 1c are increased. It will become. On the other hand, a thick fluoride f layer is formed at the edge portion of the recess 1c. The polishing is slowed by the fluoride f, and the polishing of the surrounding glass surface 1a proceeds. As a result, as shown in FIG. 4C, the protrusion 1d is formed on the periphery of the recess 1c, and the width of the recess 1c is increased and the depth is also increased.

図5は、本発明の例で、研磨力の小さい化学研磨液Aとして、フッ酸8重量%、フッ化アンモニウム10重量%で、塩酸、硫酸、硝酸、酢酸、リン酸等を含まず、残余は純水から構成されたものを使用した。化学研磨液の温度は40℃とした。   FIG. 5 shows an example of the present invention, in which the chemical polishing liquid A having low polishing power is 8 wt% hydrofluoric acid and 10 wt% ammonium fluoride, and does not contain hydrochloric acid, sulfuric acid, nitric acid, acetic acid, phosphoric acid, etc. Used was composed of pure water. The temperature of the chemical polishing liquid was 40 ° C.

図5(a)に示すように、第1のガラス基板1には、従来例と同様に凹部1cがある。化学研磨液は表面1aを研磨し、化学研磨液が凹部1c内に入り、凹部1cの表面も研磨するが、このとき生じたフッ化物fは、凹部1c内に留まる。   As shown to Fig.5 (a), the 1st glass substrate 1 has the recessed part 1c similarly to a prior art example. The chemical polishing liquid polishes the surface 1a, the chemical polishing liquid enters the recess 1c, and also polishes the surface of the recess 1c, but the fluoride f generated at this time remains in the recess 1c.

すると、凹部1cの底面を研磨するのを、フッ化物fが阻害する。本発明の化学研磨液は、フッ酸やフッ化アンモニウムの濃度が従来より低いので、化学研磨液の研磨力よりフッ化物fによる研磨抑制力の方が強くなり、凹部1cの底面は殆ど研磨されず、深くならない。一方、表面1aの研磨の方は進行するので、凹部1cは、図5(c)に示すように浅くなり、最終的には、図5(d)に示すように、ごく浅い窪み1cとなる。すなわち、第1のガラス基板1の表面は、凹凸が小さくなり、平坦に近づくことになる。   Then, the fluoride f inhibits polishing of the bottom surface of the recess 1c. In the chemical polishing liquid of the present invention, the concentration of hydrofluoric acid and ammonium fluoride is lower than that of the conventional one. Therefore, the polishing suppression force by the fluoride f is stronger than the polishing power of the chemical polishing liquid, and the bottom surface of the recess 1c is almost polished. Do not become deep. On the other hand, since the polishing of the surface 1a proceeds, the recess 1c becomes shallow as shown in FIG. 5C, and finally becomes a very shallow depression 1c as shown in FIG. 5D. . In other words, the surface of the first glass substrate 1 is reduced in unevenness and approaches flat.

なお、図4、図5で第1のガラス基板1を例示したが、第2のガラス基板2でも同じであることは言うまでもない。また、凹部1cとして傷に起因するものを例示したが、それ以外の例えば気泡による凹部でも同様である。   In addition, although the 1st glass substrate 1 was illustrated in FIG. 4, FIG. 5, it cannot be overemphasized that the 2nd glass substrate 2 is also the same. Moreover, although the thing resulting from a damage | wound was illustrated as the recessed part 1c, it is the same also in the recessed part by other than that, for example, a bubble.

図4、5から、フッ酸やフッ化アンモニウムの濃度の濃い化学研磨液では、研磨力が強すぎて、却って平坦にならなくなり、逆に、フッ酸やフッ化アンモニウムの濃度が薄いと、研磨力が低すぎて研磨に時間が掛かることになる、ということが分かった。   4 and 5, the chemical polishing liquid having a high concentration of hydrofluoric acid or ammonium fluoride has too strong polishing power and does not become flat. On the contrary, if the concentration of hydrofluoric acid or ammonium fluoride is low, the polishing is performed. It turns out that the power is too low and it takes time to polish.

本願の発明者は、さらに、鋭意努力した結果、研磨力の小さい化学研磨液Aとしては、フッ酸の濃度は、5〜10重量%、フッ化アンモニウムの濃度は、5〜13重量%の範囲であればよいことが分かった。そして、より望ましい範囲としては、フッ酸が、7〜9重量%、フッ化アンモニウムが、9〜11重量%の範囲である。いずれの場合も、残余の部分は水で、純水を使用した。   As a result of further diligent efforts, the inventor of the present application has a concentration of hydrofluoric acid in the range of 5 to 10% by weight and a concentration of ammonium fluoride in the range of 5 to 13% by weight as the chemical polishing liquid A having a low polishing power. I knew it would be good. A more desirable range is 7 to 9% by weight of hydrofluoric acid and 9 to 11% by weight of ammonium fluoride. In either case, the remaining part was water and pure water was used.

従来の化学研磨液を用いるガラス研磨によれば、ガラス基板表面に微小な傷が存在するとその傷が拡大され、液晶表示パネルとしての機能が損なわれてしまう。従って、使用する化学研磨液には、傷の拡大抑制が可能であるばかりでなく、ガラス基板表面全体の平坦性を維持可能な特性を有することが望まれる。そして、当然のことながら、シール材のシール性能に悪影響を及ぼさないことは言うまでもない。   According to the conventional glass polishing using a chemical polishing liquid, if a minute scratch is present on the surface of the glass substrate, the scratch is enlarged and the function as a liquid crystal display panel is impaired. Therefore, it is desirable that the chemical polishing liquid to be used not only can suppress the expansion of scratches but also has a characteristic that can maintain the flatness of the entire glass substrate surface. Needless to say, the sealing performance of the sealing material is not adversely affected.

第1の液槽21内で第1研磨がされ、ガラス基板1、2の表面が30μm程度研磨されたら、ガラス基板1、2の表面の傷は殆ど平坦化されるので、第1研磨を終了する。ガラス基板対10は第1の液槽21から引き上げられてリンス用の液槽22に入れられ、純水で洗浄される。この洗浄によって、化学研磨液Aと、化学研磨により生じたフッ化物fが洗い流される。
When the first polishing is performed in the first liquid tank 21 and the surfaces of the glass substrates 1 and 2 are polished by about 30 μm, the scratches on the surfaces of the glass substrates 1 and 2 are almost flattened, so the first polishing is finished. To do. The glass substrate pair 10 is pulled up from the first liquid tank 21 and put in the liquid tank 22 for rinsing, and is washed with pure water . By this cleaning, the chemical polishing liquid A and the fluoride f generated by the chemical polishing are washed away.

洗浄が終わると、ガラス基板対10は第2の液槽23に入れられ、化学研磨液Bに浸漬され、工程105の薄板化第2研磨が開始される。化学研磨液Bは、前述した組成で、通常の研磨力を備えており、従来と同じ速度でガラス基板1、2の表面を研磨し、薄板化する。化学研磨液Bの温度は、加熱冷却装置23aにより40℃に保持され、撹拌装置23bにより化学研磨液Bを撹拌しながら研磨が進行する。化学研磨液Bは、前述した組成で、研磨力が大きいが、薄板化第1研磨でガラス基板1の凹凸が小さくなっているので、このままの平坦な状態を保持して化学研磨が行われる。   When the cleaning is finished, the glass substrate pair 10 is placed in the second liquid tank 23 and immersed in the chemical polishing liquid B, and the thinned second polishing in Step 105 is started. The chemical polishing liquid B has the above-described composition and has a normal polishing force, and polishes the surfaces of the glass substrates 1 and 2 at the same speed as the conventional one to make a thin plate. The temperature of the chemical polishing liquid B is maintained at 40 ° C. by the heating / cooling device 23a, and polishing proceeds while stirring the chemical polishing liquid B by the stirring device 23b. The chemical polishing liquid B has the above-described composition and high polishing power. However, since the unevenness of the glass substrate 1 is reduced by the thinned first polishing, the chemical polishing is performed while maintaining the flat state as it is.

薄板化第2研磨によってガラス基板1の厚さが所望の厚さに達したら、第2研磨を終える。ガラス基板対10は、引き上げられて仕上げ用の液槽24内で純水によって洗浄される。   When the thickness of the glass substrate 1 reaches a desired thickness by the thinning second polishing, the second polishing is finished. The glass substrate pair 10 is pulled up and washed with pure water in the finishing bath 24.

その後の106工程は、貼り合わされた一対のマザーガラス基板を、図2の中央に示す製品シール5と5の中間で切断し、所定の表示領域を有する1つずつの液晶表示パネル7にするための個片化切断工程である。ガラス基板の切断には、カッターホイールを用いたスクライブ切断方法とガラス基板を分断するためのブレーク切断方法とを組合せて行った。   In the subsequent 106 steps, the pair of mother glass substrates bonded together are cut in the middle of the product seals 5 and 5 shown in the center of FIG. 2 to form one liquid crystal display panel 7 having a predetermined display area. This is a singulation cutting process. The glass substrate was cut by combining a scribe cutting method using a cutter wheel and a break cutting method for dividing the glass substrate.

107工程では上記した製品シール5で囲まれた領域に液晶を封入した後、封入口を封止する。 In step 107, after the liquid crystal is sealed in the region surrounded by the product seal 5 described above, the sealing port is sealed.

最後に、108工程は上記した液晶表示パネル基板の表面に偏光板を貼る工程であり、これによって液晶表示パネル10が完成する。   Finally, step 108 is a step of attaching a polarizing plate to the surface of the liquid crystal display panel substrate described above, whereby the liquid crystal display panel 10 is completed.

ところで、上記した液晶表示パネルの製造工程ではマザーガラスの状態で貼り合わせた一対のガラス基板(1または2)をマザーガラスの状態で薄板化研磨を行った。しかしながら、予め製品シール5で囲まれた領域に滴下方式で液晶を封入し、106工程と104工程との順序を入れ替えて、所定の大きさの液晶表示パネルに個片化切断した後、少なくとも一方のガラス基板の表面に対して薄板化研磨を行っても良い。   By the way, in the manufacturing process of the above-mentioned liquid crystal display panel, the pair of glass substrates (1 or 2) bonded together in the state of mother glass was thinned and polished in the state of mother glass. However, liquid crystal is sealed in a region enclosed by the product seal 5 in advance by a dropping method, the order of the 106 step and the 104 step is changed, and the liquid crystal display panel having a predetermined size is cut into pieces and then at least one of them is cut. The surface of the glass substrate may be thinned and polished.

図6は、従来の化学研磨液Bと、第1の化学研磨液A(フッ酸8重量%、フッ化アンモニウム10重量%)による研磨の比較をした実験例である。テストピースとなるガラス基板に、マイクロビッカース硬度計の四角錐をしたダイヤモンド圧子を、2N、3N、5Nの3通りの荷重により押しつけて凹部1cを人為的に形成した。縦軸は凹部の直径(四角なので、対角線の長さ)、横軸は圧子の加重である。図6において、四角の点は、ダイヤモンド圧子による凹部の径(対角線の長さ)である。三角の点は上記の従来の化学研磨液で、丸は上記の本発明の化学研磨液の場合である。   FIG. 6 is an experimental example comparing the polishing with the conventional chemical polishing solution B and the first chemical polishing solution A (hydrofluoric acid 8 wt%, ammonium fluoride 10 wt%). A concave indentation 1c was artificially formed by pressing a diamond indenter having a quadrangular pyramid of a micro Vickers hardness tester on a glass substrate serving as a test piece with three loads of 2N, 3N, and 5N. The vertical axis is the diameter of the recess (the length of the diagonal because it is a square), and the horizontal axis is the weight of the indenter. In FIG. 6, the square points are the diameters of the recesses (the length of the diagonal lines) by the diamond indenter. Triangular points are the above-described conventional chemical polishing liquid, and circles are the above-described chemical polishing liquid of the present invention.

図6によれば、本発明の化学研磨液は、従来の化学研磨液に比べて凹部の直径が5μm小さくなっている。また、従来の化学研磨液では、ダイヤモンド圧子で形成した凹部より直径が大きくなっているのに対し、本発明の化学研磨液では、ダイヤモンド圧子で形成した凹部より研磨後の直径の方が小さくなっていることが分かる。   According to FIG. 6, the chemical polishing liquid of the present invention has a recess having a diameter of 5 μm smaller than that of the conventional chemical polishing liquid. In addition, in the conventional chemical polishing liquid, the diameter is larger than the concave portion formed with the diamond indenter, whereas in the chemical polishing liquid of the present invention, the diameter after polishing is smaller than the concave portion formed with the diamond indenter. I understand that

本発明の実施の形態を説明する液晶表示パネルの製造工程を示すフローチャートである。It is a flowchart which shows the manufacturing process of the liquid crystal display panel explaining embodiment of this invention. 第1と第2のガラス基板を貼り合わせ、複数の液晶表示パネルを形成した状態の断面を模式的に示した図である。It is the figure which showed typically the cross section of the state which bonded together the 1st and 2nd glass substrate and formed the several liquid crystal display panel. 第1研磨と第2研磨工程を行う研磨装置の構成を模式的に示す図である。It is a figure which shows typically the structure of the grinding | polishing apparatus which performs a 1st grinding | polishing and a 2nd grinding | polishing process. 従来の化学研磨液によるガラス基板の第1研磨の状態を説明する図である。It is a figure explaining the state of the 1st grinding | polishing of the glass substrate by the conventional chemical polishing liquid. 本発明の化学研磨液によるガラス基板の第1研磨の状態を説明する図である。It is a figure explaining the state of the 1st grinding | polishing of the glass substrate by the chemical polishing liquid of this invention. 従来の化学研磨液と、本発明の化学研磨とによる凹部の研磨状態を示す線図である。It is a diagram which shows the grinding | polishing state of the recessed part by the conventional chemical polishing liquid and the chemical polishing of this invention.

符号の説明Explanation of symbols

1 第1のガラス基板
1c 凹部
1d 突起
2 第2のガラス基板
3 薄膜トランジスタ素子
5 製品シール
6 空間
7 液晶表示パネル
10 ガラス基板対
21 第1の液槽
23 第2の液槽
A 研磨力の小さい化学研磨液
B 研磨力の大きい化学研磨液
DESCRIPTION OF SYMBOLS 1 1st glass substrate 1c Recess 1d Protrusion 2 2nd glass substrate 3 Thin film transistor element 5 Product seal 6 Space 7 Liquid crystal display panel 10 Glass substrate pair 21 1st liquid tank 23 2nd liquid tank A Chemical with small polishing power Polishing liquid B Chemical polishing liquid with high polishing power

Claims (5)

複数個の液晶表示パネルが形成された第1のガラス基板と、該第1のガラス基板と同じ大きさの第2のガラス基板とを相互に離間するようにシール材を介して貼り合わせ、前記一対のガラス基板の少なくとも一方のガラス基板の外面を第1研磨工程と第2研磨工程からなるガラス基板用化学研磨液によって薄板化し、前記第1研磨工程が第2研磨工程に比較して研磨力が小さく、前記第1研磨工程に使用する研磨力の小さいガラス基板用化学研磨液が、フッ酸5〜10重量%とフッ化アンモニウムを5〜13重量%、残余が水からなる構成で、前記第1研磨工程により、研磨するガラス基板の表面の傷を研磨して平坦化し、前記第2研磨工程により、ガラス基板の厚さを所望の厚さまで研磨することを特徴とするガラス基板のエッチング方法。 The first glass substrate on which a plurality of liquid crystal display panels are formed and the second glass substrate having the same size as the first glass substrate are bonded together via a sealing material so as to be separated from each other, The outer surface of at least one glass substrate of the pair of glass substrates is thinned with a chemical polishing liquid for glass substrate comprising a first polishing step and a second polishing step, and the first polishing step is more abrasive than the second polishing step. is rather small, the first polishing force small glass substrates for chemical polishing solution used for polishing step, hydrofluoric acid 5-10% and 5-13% by weight of ammonium fluoride, in a configuration where the residual is composed of water, Etching the glass substrate characterized by polishing and flattening scratches on the surface of the glass substrate to be polished by the first polishing step, and polishing the glass substrate to a desired thickness by the second polishing step. Method 前記第1のガラス基板に複数の液晶表示パネルに対応した薄膜トランジスタ素子を形成し、前記第2のガラス基板に複数の液晶表示パネルに対応したカラーフィルタ素子を形成し、一対のガラス基板間の空間が前記シール材によって各液晶表示パネルに対応して分割されており、前記第1と第2のガラス基板の少なくとも一方のガラス基板の外面を薄板化研磨した後、前記第1と第2のガラス基板を、個々の液晶表示パネルに個片化切断することを特徴とする請求項1に記載のガラス基板のエッチング方法。 A thin film transistor element corresponding to a plurality of liquid crystal display panels is formed on the first glass substrate, a color filter element corresponding to the plurality of liquid crystal display panels is formed on the second glass substrate, and a space between the pair of glass substrates Are divided corresponding to each liquid crystal display panel by the sealing material, and after thinning and polishing the outer surface of at least one of the first and second glass substrates, the first and second glasses The method for etching a glass substrate according to claim 1, wherein the substrate is cut into individual liquid crystal display panels. 前記第1研磨工程で、ガラス基板の厚さを30μm±10μm研磨し、前記第2研磨工
程でガラス基板の厚さが所望の厚さになるまで研磨することを特徴とする請求項1又は2に記載のガラス基板のエッチング方法。
In the first polishing step, the thickness of the glass substrate was 30 [mu] m ± 10 [mu] m polishing, according to claim 1 or 2 the thickness of the glass substrate at the second polishing step, characterized in that the polished until a desired thickness The glass substrate etching method as described in 2.
複数個の液晶表示パネルの大きさの第1のガラス基板と、該第1のガラス基板と同じ大きさの第2のガラス基板とを相互に離間するようにシール材を介して貼り合わせたガラス基板対を収容する空間と、該空間内に入れられた研磨力の小さいガラス基板用化学研磨液と、を有する第1の液槽と、前記第1と第2のガラス基板を貼り合わせたガラス基板対を収容する空間と、該空間内に入れられた研磨力の大きいガラス基板用化学研磨液とを有する第2の液槽と、を有し、前記第1の液槽内の研磨力の小さいガラス基板用化学研磨液が、フッ酸5〜10重量%とフッ化アンモニウムを5〜13重量%、残余が水からなる構成であり、前記第1の液槽で研磨するガラス基板の表面の傷を研磨して平坦化し、前記第2の液槽によりガラス基板の厚さを所望の厚さまで研磨することを特徴とするガラス基板のエッチング装置。 A glass in which a first glass substrate having a size of a plurality of liquid crystal display panels and a second glass substrate having the same size as the first glass substrate are bonded to each other via a sealing material so as to be separated from each other. A first liquid tank having a space for accommodating a pair of substrates, and a chemical polishing liquid for a glass substrate having a small polishing power, which is placed in the space; and glass in which the first and second glass substrates are bonded together possess a space for accommodating the substrate pair, a second liquid tank having a large glass substrate for chemical polishing solution of the polishing force is placed in the space, a polishing force in the first liquid tank A small chemical polishing solution for a glass substrate is composed of 5 to 10% by weight of hydrofluoric acid, 5 to 13% by weight of ammonium fluoride, and the balance is water, and the surface of the glass substrate polished in the first liquid tank The scratches are polished and flattened, and the thickness of the glass substrate is increased by the second liquid tank. Etching apparatus for a glass substrate, which comprises grinding to a desired thickness. 前記第1の液槽と第2の液槽により研磨の後に、ガラス基板を洗浄するためのリンス用液槽を設けたことを特徴とする請求項4に記載のエッチング装置。 The etching apparatus according to claim 4, further comprising a rinsing liquid tank for cleaning the glass substrate after polishing by the first liquid tank and the second liquid tank.
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