TW201429007A - 具有濾光器及保護層之發光裝置 - Google Patents
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Abstract
根據本發明之實施例之一方法包含:提供附接至一安裝座之複數個發光二極體(LED)。一濾光器附接至該複數個LED之至少一者。一保護層形成於該濾光器上。一反射層形成於該安裝座上。移除安置於該保護層上之該反射層之一部分。
Description
本發明係關於具有一濾光器及一保護層之發光裝置。
包含發光二極體(LED)、諧振腔發光二極體(RCLED)、垂直腔雷射二極體(VCSEL)及邊射型雷射之半導體發光裝置係當前可用之最有效率光源中之一。在製造能夠橫跨可見光譜而操作之高亮度發光裝置時,當前所關注之材料系統包含III-V族半導體,尤其是鎵、鋁、銦及氮之二元合金、三元合金及四元合金,亦被稱為III族氮化物。通常,藉由通過有機金屬化學氣相沈積(MOCVD)、分子束磊晶(MBE)或其他磊晶技術在藍寶石、碳化矽、III族氮化物或其他適合基板上磊晶地生長不同組合物及摻雜劑濃度之一堆疊之半導體層而製造III族氮化物發光裝置。該堆疊通常包含形成於基板上之摻雜有(例如)Si之一或多個n型層、形成於該或該等n型層上之一作用區域中之一或多個發光層、及形成於該作用區域上之摻雜有(例如)Mg之一或多個p型層。電接觸件形成於該n型區域及該p型區域上。
圖1繪示US 7,256,483中更詳細所描述之一覆晶LED。該LED包含生長於一藍寶石生長基板(圖中未展示)上之n型層16、一作用層18及p型層20。在LED形成程序期間,蝕除p型層20及作用層18之部分,且金屬50(金屬化層加接合金屬)在與p型接觸金屬24相同之側上接觸n型
層16。一底填材料52可沈積於LED下方之空隙中以減小橫跨LED之熱梯度,將機械強度添加至LED與封裝基板之間之附件件,且防止污染物接觸LED材料。n型金屬50及p型金屬24分別接合至一封裝基板12上之墊22A及22B。使用通孔28A及28B及/或金屬跡線來將封裝基板12上之接觸墊22A及22B連接至可焊電極26A及26B。移除生長基板以暴露n型層16之一表面。例如,藉由使用一KOH溶液之光電化學蝕刻而粗糙化此表面以增加光提取。
本發明之一目的為提供一種具有一濾光器之發光裝置。由一保護層保護該濾光器。
根據本發明之實施例之一方法包含:提供附接至一安裝座之複數個LED。一濾光器附接至該複數個LED之至少一者。一保護層形成於該濾光器上。一反射層形成於該安裝座上。移除安置於該保護層上之該反射層之一部分。
本發明之實施例包含附接至一安裝座之複數個LED。一濾光器安置於該等LED上。一透明層安置於該濾光器上。反射材料安置於相鄰LED之間。
12‧‧‧封裝基板
16‧‧‧n型層
18‧‧‧作用層
20‧‧‧p型層
22A‧‧‧墊
22B‧‧‧墊
24‧‧‧p型接觸金屬/p型金屬
26A‧‧‧可焊電極
26B‧‧‧可焊電極
28A‧‧‧通孔
28B‧‧‧通孔
50‧‧‧金屬
52‧‧‧底填材料
60‧‧‧發光二極體(LED)
62‧‧‧安裝座
70‧‧‧區域
72‧‧‧接合墊
74‧‧‧反射材料/反射材料層
76‧‧‧區域
78‧‧‧頂部/頂面
100‧‧‧波長轉換結構
102‧‧‧濾光層/濾光器
103‧‧‧平滑層
104‧‧‧保護層
106‧‧‧區域
108‧‧‧黏著劑/黏著層
110‧‧‧接合墊
112‧‧‧區域
114‧‧‧區域
圖1繪示具有一粗糙化頂面之一覆晶LED。
圖2係安置於一安裝座上之一群組之LED之一平面圖。
圖3係安置於一安裝座上之LED之一橫截面圖。
圖4係安置於一波長轉換層上之一濾光器之一橫截面圖。
圖5繪示在濾光器上形成一保護層之後之圖4之結構。
圖6繪示單粒化之後之圖5之結構。
圖7係附接至圖3中所繪示之LED之圖6之結構之一橫截面圖。
圖8繪示在結構上形成一反射層之後之圖7之結構。
圖9繪示使反射層變薄以暴露保護層之一頂面之後之圖8之結構。
圖10係安置於一濾光器與一波長轉換層之間之一平滑層之一橫截面圖。
為符合特定應用之規格,有時需要過濾由LED發射之光。在本發明之實施例中,一濾光器係安置於由一LED發射之光的路徑中。一保護層可形成於該濾光器上,以在該LED之處理及/或操作期間保護該濾光器。儘管在以下實例中半導體發光裝置係發射藍光或UV光之III族氮化物LED,但可使用除LED之外之半導體發光裝置(諸如雷射二極體)及由其他材料系統(諸如其他III-V族材料、III族磷化物、III族砷化物、II-VI族材料、ZnO或基於Si之材料)製成的半導體發光裝置。
圖2係附接至一安裝座之一群組之LED 60之一平面圖。圖2中繪示呈一2×2陣列之附接至安裝座62之四個LED 60。隨應用所指定,一單一LED或任何數目個LED 60可以任何適合配置附接至安裝座62。在一些實施例中,安裝座62上之接合墊72用於將電力供應至LED 60。
下圖中之任何LED 60可為(例如)經組態以自LED之頂面發射大多數光之一覆晶裝置。圖1中繪示一適合LED 60之一實例,但可使用任何適合LED。為形成一III族氮化物LED,首先在一生長基板上生長一III族氮化物半導體結構,如此項技術中所知。該生長基板可為任何適合基板,諸如(例如)藍寶石、SiC、Si、GaN或一複合基板。該半導體結構包含夾於n型區域與p型區域之間之一發光或作用區域。一n型區域可首先被生長且可包含不同組合物及摻雜劑濃度的多個層,該多個層包含(例如):製備層,諸如緩衝層或成核層;及/或經設計以促進該生長基板之移除的層,其可為n型或未經有意摻雜;及n型或甚至p型裝置層,其根據發光區域所要之特定光學性質、材料性質或電性質來
設計,以有效率地發射光。一發光或作用區域生長於該n型區域上。適合發光區域之實例包含一單一厚或薄發光層或一多量子井發光區域,該多量子井發光區域包含由障壁層分離之多個薄或厚發光層。接著,一p型區域可生長於該發光區域上。如同該n型區域,該p型區域可包含不同組合物、厚度及摻雜劑濃度之多個層,其等包含未經有意摻雜之層,或n型層。裝置中之全部半導體材料的總厚度在一些實施例中小於10微米,且在一些實施例中小於6微米。在一些實施例中,首先生長該p型區域,接著為該作用區域及該n型區域。
一金屬p型接觸件形成於p型區域上。若透過與該p型接觸件相對之一表面自半導體結構向外導引大多數光,則諸如在一磊晶裝置中,該p型接觸件可具反射性。可藉由圖案化半導體結構(藉由標準光微影操作)且蝕刻半導體結構以移除p型區域之整個厚度之一部分及發光區域之整個厚度之一部分而形成一覆晶裝置以形成使其上形成一金屬n型接觸件之n型區域之一表面露出之一平台。可以任何適合方式形成該平台及p型接觸件與n型接觸件。熟習技術者已熟知如何形成該平台及p型接觸件與n型接觸件。
圖3係附接至安裝座62之四個LED 60之一簡化橫截面圖。LED可為一2×2陣列、一線性陣列或任何其他適合配置之部分。比圖中所繪示之四個LED多或少之LED可安裝於一單一安裝座62上。LED 60可透過p型及n型接觸件、金柱形凸塊或其他任何適合連接機構而連接至安裝座62。一底填材料(諸如環氧樹脂、聚氧矽或任何適合材料)可注入LED 60下方之LED 60與安裝座62之間之任何空間中。安裝座62及底材可在隨後處理步驟(諸如移除生長基板)期間機械地支撐半導體結構。可使用任何適合安裝座。適合安裝座之實例包含具有導電通孔以形成至半導體結構之電連接件之一絕緣或半絕緣晶圓,諸如一矽晶圓或一陶瓷晶圓、一金屬結構或任何其他適合安裝座。在一些實施例
中,厚金屬接合墊形成於半導體結構上以在諸如移除生長基板之處理期間支撐半導體結構。可在將LED 60附接至安裝座62之前或之後部分或完全移除生長基板,或生長基板可仍為裝置之部分。藉由移除生長基板而暴露之半導體結構可經粗糙化、圖案化或紋理化以增加光提取。
在與由圖3繪示之程序分離之一程序中,製備一波長轉換結構,如圖4、圖5及圖6中所繪示。
在圖4中,一濾光層102形成於一波長轉換結構100上。波長轉換結構100為一預製波長轉換構件(即,形成為與圖3之LED 60及安裝座62分離之一自支撐波長轉換構件),其包含吸收由LED發射之光且發射一不同波長之光之一或多個波長轉換材料。一適合波長轉換結構100之一實例為一自支撐波長轉換陶瓷厚片。一波長轉換陶瓷可為(例如)燒結成一自支撐厚片之一粉末磷光體。該厚片大體上不含除磷光體本身之外之其他黏結劑材料。例如,適合厚片在一些實施例中可為至少50微米厚,在一些實施例中可不超過500微米厚,在一些實施例中可為至少100微米厚,及在一些實施例中可不超過300微米厚。一適合波長轉換結構100之另一實例為安置於一透明材料中以形成一自支撐結構之一粉末波長轉換材料。適合透明材料之實例包含聚矽氧、玻璃及環氧樹脂。
波長轉換結構100中之(若干)波長轉換材料可為習知磷光體、有機磷光體、量子點、有機半導體、II-VI族或III-V族半導體、II-VI族或III-VI族半導體量子點或奈米晶體、染料、聚合物或發冷光材料。可使用任何適合粉末磷光體,其包含(但不限於):基於石榴石之磷光體,諸如(Y,Gd,La,Lu,T,Pr,Sm)3(Al,Ga,In)5O12:Ce、(Lu1-x-y-a-bYxGdy)3(Al1-zGaz)5O12:CeaPrb(其中0<x<1,0<y<1,0<z0.1,0<a0.2及0<b0.1)、Y3Al5O12:Ce(YAG)、Lu3Al5O12:Ce(LuAG)、Y3Al5-xGaxO12:Ce
(YAlGaG)、(Ba1-xSrx)SiO3:Eu(BOSE);及基於氮化物之磷光體,諸如(Ca,Sr)AlSiN3:Eu及(Ca,Sr,Ba)2Si5N8:Eu。
波長轉換結構100可包含一單一波長轉換材料、波長轉換材料之一混合物、或形成為分離層而非混合在一起之多個波長轉換材料。發射不同色彩之光之波長轉換材料可安置於波長轉換結構100之分離區域中或混合在一起。
一濾光層102可沈積至波長轉換結構100之一側上。在一些實施例中,濾光層102係二向色濾光器。二向色濾光器可由諸如Nb2O5、SiO2、TiO2及任何其他適合材料之交替材料的薄層組成。濾光層102之厚度在一些實施例中可為至少10奈米,在一些實施例中可不超過5微米厚,在一些實施例中可為至少1微米厚,及在一些實施例中可不超過2微米厚。濾光層102中之層的總數目在一些實施例中可為至少2個層,在一些實施例中可不超過50個層,在一些實施例中可為至少10個層,及在一些實施例中可不超過30個層。各層可為相同厚度或可使用不同厚度之層。二向色濾光層102可藉由包含塔形電子管濺鍍、DC濺鍍、電漿氣相沈積、化學氣相沈積及蒸鍍之任何適合技術而沈積於波長轉換結構100上。
在一些實施例中,如圖10中所繪示,一平滑層103係安置於波長轉換結構100與濾光器102之間。波長轉換結構100之表面可具有濾光器102之效力。在一些實施例中,若濾光器102為平滑器,則其效能改良;相應地,經設計以形成其上安置濾光器102之一平滑表面之一平滑層103可在沈積濾光器102之前形成於波長轉換結構100上。例如,一波長轉換陶瓷厚片可具有10奈米至600微米之間之一表面均方根(RMS)粗糙度。若該RMS粗糙度在一些實施例中大於(例如)300微米,則一平滑層103可在形成濾光器102之前形成於波長轉換結構100上。平滑層103可為(例如)Nb2O5、一或多個矽氧化物、一或多個鈦氧化
物、一或多個矽氮化物、一或多個過渡金屬氧化物或一或多個過渡金屬氮化物。例如,平滑層103在一些實施例中可為至少5奈米厚,在一些實施例中可不超過500微米厚,在一些實施例中可為至少1微米厚,及在一些實施例中可不超過20微米厚。
二向色濾光層102之厚度的變動可非所要地增加自裝置提取之「彩雲」的尺寸(即,自裝置提取之色點的分佈)及/或干擾由波長轉換材料及LED發射之組合光譜的色彩瞄準。
相應地,在圖5中,一透明無波長轉換之保護層104產生於濾光層102上方。此保護層104可包含(例如)聚矽氧化合物KJR9222A/B及KRJ9226D,以及其他材料。在一些實施例中,保護層104具有與濾光層102相同之一折射率以避免層102與104之間之邊界處的損耗。可使用包含(例如)網版印刷、層疊、包覆成型、鑄造等等之各種技術之任何者來使保護層104形成於濾光層102上。
為促進保護層104形成於濾光層102上,濾光層102可通常在2分鐘至30分鐘之間經受諸如氧電漿、UV臭氧及類似者之處理。為最大化此處理之效力,該處理與保護層104的形成之間的延時(若存在)不應超過數小時。
保護層104之厚度將取決於微珠噴砂或減小厚度之其他程序之效應之預期控制程度,且可在自2微米至100微米之範圍內。若為習知處理技術,則20微米至40微米之一保護層厚度一般將足以。若聚矽氧用作為保護材料,固化之一時程可為80℃處1小時,接著120℃處1小時,且接著150℃處4小時。
一適合保護層104之另一實例為一光學透明固態膜,諸如形成於濾光層102之頂部上之Nb2O5、TiO2、SiO2或TaO2之一單一層。一固態保護層104之優點在於:若用與上述二向色濾光器102相同之工具且在與上述二向色濾光器102相同之時間沈積固態保護層,則可減少處理
步驟之數目。一固態保護層104在一些實施例中可不超過5微米厚,且在一些實施例中可不超過500奈米厚。
在圖6中,(例如)藉由在區域106中進行鋸切或任何其他適合技術而切割包含波長轉換結構100、濾光層102、平滑層103(若存在)及保護層104之結構。
在圖7中,經切割之結構附接至LED 60,LED 60附接至安裝座62。圖中繪示位於安裝座62之左側上之一接合墊。各波長轉換結構100可藉由一黏著劑108而連接至一LED 60。可使用任何適合黏著劑。一適合黏著劑之一實例為聚矽氧,其安置於LED 60上、與濾光層102相對之波長轉換結構100之表面上或兩個表面上。例如,在一些實施例中,黏著劑108逐滴地施配(以一系列滴劑之形式施配)於各LED 60上。
在一些實施例中,一波長轉換材料可安置於一黏著層108中。例如,一粉末磷光體可與聚矽氧黏著層108混合,接著安置於LED 60上。
裝置之任何波長轉換結構(諸如波長轉換結構100及黏著層108)中之波長轉換材料、所使用之波長轉換材料之數量、濾光材料及厚度在一些實施例中經選擇以匹配由LED 60發射之光之峰值波長,使得來自LED 60之組合經未轉換泵浦光及自結構射出之經波長轉換光滿足(例如)色點及流明輸出之一預定規格。
由LED 60發射之未經轉換光通常為自結構提取之光之最終光譜之部分,但其無需如此。共同組合之實例包含與一黃光發射波長轉換材料組合之一藍光發射LED、與綠光發射及紅光發射波長轉換材料組合之一藍光發射LED、與藍光發射及黃光發射波長轉換材料組合之一UV發射LED及與藍光發射、綠光發射及紅光發射波長轉換材料組合之一UV發射LED。發射其他色彩光之波長轉換材料可經添加以調適
自結構發射之光之光譜。
在一些實施例中,LED 60發射具有一藍色峰值波長之光,波長轉換結構100包含吸收由LED 60發射之光且發射綠光及/或黃光之一或多個波長轉換材料,且一波長轉換材料(諸如一磷光體,其自LED 60吸收藍光或自波長轉換結構100吸收經波長轉換之光且發射紅光)安置於黏著層108中。在一些實施例中,LED 60發射具有一藍色峰值波長之光,且波長轉換結構100包含吸收由LED 60發射之光且發射綠光、黃光及紅光之部分或全部之一或多個波長轉換材料,使得無額外波長轉換材料安置於黏著層108中。
在圖8中,一反射材料74形成於LED 60及安裝座62上。反射材料74填充相鄰LED 60之間之區域70。反射材料74可為(例如)安置於一透明或反射支撐基體(諸如聚矽氧)中之反射顆粒,諸如TiO2或氧化鋁顆粒。可藉由任何適合技術(其包含(例如)將反射顆粒與支撐基體之一混合物壓入至區域70中或模製)而形成反射材料層74。如圖8中所繪示,反射材料74可安置於各裝置上之保護層104之頂部上之區域76中。在一些實施例中,藉由一技術(諸如模製)而形成反射材料74以促進在接合墊110上形成反射材料之一較薄區域112,如圖8中所繪示。
在圖9中,反射材料74經變薄以暴露LED 60上之保護層104之頂部78且暴露區域114中之接合墊110。當移除反射材料74時,保護層104保護濾光層102免受損害。可藉由任何適合技術(其包含(例如)蝕刻或機械技術,諸如微珠噴砂、濕式珠粒噴砂、乾式珠粒噴砂及研磨)而移除過量反射材料74。例如,在乾式珠粒噴砂中,80微米小蘇打顆粒以一空氣流之形式撞擊反射材料74之表面。在另一實例中,在濕式珠粒噴砂中,在反射材料74之表面處導引呈一水漿體之180微米塑膠顆粒。歸因於不同蝕刻機制,當保護層104為聚矽氧時,乾式珠粒噴砂係適合的,且當保護層104為聚矽氧或一固態材料(諸如Nb2O5、
TiO2或SiO2)時,濕式珠粒噴砂係適合的。
保護層104保護及保留濾光層102之厚度以可避免可非所要地增加色點雲之厚度變動。保護層104應足夠厚以適應用於移除過量反射材料74且不允許濾光層102之穿通損害之技術之移除變動。反射材料74可比保護層104更無法抵抗移除程序。用於移除過量反射材料74之技術可促進保護層104之表面粗糙化以可改良光提取。
在一些實施例中,在移除過量反射材料74之後,暴露保護層104之頂面78,如圖9中所繪示。LED 60之間之區域70中之反射材料74防止光自LED 60之側及波長轉換結構100之側射出,使得大多數光透過LED 60、波長轉換結構100及濾光層102之頂部被提取。在一些實施例中,反射材料74與LED 60、波長轉換結構、濾光器102及保護層104之一部分之側直接接觸,如圖9中所繪示。在一些實施例中,反射材料74之頂面與保護層104之頂面78等高(同平面)。
在一些實施例中,保護膜68之頂面78經粗糙化、紋理化或圖案化以改良光提取。可藉由移除過量反射材料74之相同程序或在一或多個單獨處理步驟中形成表面上之粗糙化、紋理化或圖案化。
儘管已詳細描述本發明,但熟習技術者應瞭解,就本發明而言,可在不背離本文所描述之發明概念之精神之情況下對本發明作出修改。因此,非意欲本發明之範疇受限於所繪示及所描述之特定實施例。
60‧‧‧發光二極體(LED)
62‧‧‧安裝座
70‧‧‧區域
74‧‧‧反射材料/反射材料層
78‧‧‧頂部/頂面
100‧‧‧波長轉換結構
102‧‧‧濾光層/濾光器
104‧‧‧保護層
108‧‧‧黏著劑/黏著層
110‧‧‧接合墊
114‧‧‧區域
Claims (15)
- 一種方法,其包括:提供附接至一安裝座之複數個LED;將一濾光器附接至該複數個LED之至少一者;在該濾光器上形成一保護層;在該安裝座上形成一反射層;及移除安置於該保護層上之該反射層的一部分。
- 如請求項1之方法,進一步包括:在一波長轉換結構上形成一濾光器,其中將一濾光器附接至該複數個LED之至少一者包括將該波長轉換結構黏著至該LED。
- 如請求項2之方法,其中該波長轉換結構係一波長轉換陶瓷。
- 如請求項2之方法,其中該濾光器係一個二向色濾光器。
- 如請求項2之方法,其中將該波長轉換結構黏著至該LED包括:將一個聚矽氧接合層安置於該波長轉換結構與該LED之間。
- 如請求項5之方法,進一步包括:將一波長轉換材料安置於該聚矽氧接合層中。
- 如請求項2之方法,其中在一波長轉換結構上形成一濾光器包括在波長轉換結構之一晶圓上形成一濾光器,該方法進一步包括在將該波長轉換結構黏著至該LED之前切割波長轉換結構之該晶圓。
- 如請求項2之方法,進一步包括:在形成一濾光器之前,將材料安置於該波長轉換結構上以形成一平滑表面。
- 一種結構,其包括:複數個LED,其等附接至一安裝座;一濾光器,其安置於該等LED上; 一透明層,其安置於該濾光器上;及反射材料,其安置於相鄰LED之間。
- 如請求項9之結構,進一步包括安置於該濾光器與該複數個LED之間之一波長轉換結構。
- 如請求項10之結構,其中該波長轉換結構係一波長轉換陶瓷。
- 如請求項10之結構,進一步包括安置於該波長轉換結構與該複數個LED之間之一接合層。
- 如請求項12之結構,進一步包括安置於該接合層中之一波長轉換材料。
- 如請求項9之結構,其中該濾光器係一個二向色濾光器。
- 如請求項9之結構,進一步包括安置於該濾光器與該波長轉換結構之間之一平滑層。
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