CN104904010A - 包括滤光器和保护层的发光器件 - Google Patents
包括滤光器和保护层的发光器件 Download PDFInfo
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Abstract
根据本发明的实施例的方法包括提供附接到底座(62)的多个LED(60)。将滤光器(102)附接到所述多个LED中的至少一个。在所述滤光器上方形成保护层(104)。在所述底座上方形成反射层(74)。去除安置在所述保护层上方的反射层的一部分。
Description
技术领域
本发明涉及具有滤光器和保护层的发光器件。
背景技术
包括发光二极管(LED)、谐振腔发光二极管(RCLED)、垂直腔激光二极管(VCSEL)和边缘发射激光器在内的半导体发光器件是当前可用的最高效的光源之一。在制造能够跨可见光谱进行操作的高亮度发光器件中当前令人感兴趣的材料系统包括III-V族半导体,特别是也被称为III-氮化物材料的镓、铝、铟和氮的二元、三元和四元合金。通常,由金属有机物化学气相沉积(MOCVD)、分子束外延(MBE)或其他外延技术通过在蓝宝石、硅碳化物、III-氮或其他合适衬底上外延生长不同组分和掺杂浓度的半导体层的堆叠来制作III-氮发光器件。该堆叠常常包括掺杂有例如形成在衬底上方的Si的一个或多个n型层、形成在该一个n型层或多个n型层上方处于有源区中的一个或多个发光层,以及掺杂有例如形成在该有源区上方的Mg的一个或多个p型层。在这些n型和p型区上形成电触点。
图1图示了在US 7256483中更详细描述的倒装芯片LED。该LED包括n型层16、有源层18以及生长在蓝宝石生长衬底(未示出)上的p型层20。P层20和有源层18的部分在LED形成过程期间被蚀刻掉,并且金属50(金属化层加上接合金属)在与p-接触金属24的同一侧上接触n层16。可以将底部填充料52沉积在LED下方的空隙中以降低跨LED的热梯度、增加LED与封装衬底之间的附件的机械强度,以及防止污染物接触LED材料。将n-金属50和p-金属24分别接合到封装衬底12上的垫22A和22B。使用过孔28A和28B和/或金属线将封装衬底12上的接触垫22A和22B连接到可焊电极26A和26B。去除生长衬底,暴露n型层16的表面。例如通过使用KOH解决方案进行光电化学蚀刻来使该表面变粗糙以提高光提取。
发明内容
本发明的目的是提供具有滤光器的发光器件。该滤光器由保护层进行保护。
根据本发明的实施例的方法包括提供附接到底座的多个LED。将滤光器附接到所述多个LED中的至少一个。在所述滤光器上方形成保护层。在所述底座上方形成反射层。去除安置在所述保护层上方的反射层的一部分。
本发明的实施例包括附接到底座的多个LED。将滤光器安置在LED上方。将透明层安置在滤光器上方。将反射材料安置在相邻的LED之间。
附图说明
图1图示了具有粗糙化顶表面的倒装芯片LED。
图2是安置在底座上的一组LED的俯视图。
图3是安置在底座上的LED的截面视图。
图4是安置在波长转换层上的滤光器的截面视图。
图5图示了在滤光器上方形成保护层之后图4的结构。
图6图示了在单一化(singulation)之后图5的结构。
图7是附接到图3中图示的LED的图6的结构的截面视图。
图8图示了在图7的结构上方形成反射层之后的图7的结构。
图9图示了在使反射层变薄以暴露保护层的顶表面之后图8的结构。
图10是安置在滤光器与波长转换层之间的平滑层的截面视图。
具体实施方式
为了满足用于针对应用的规格,过滤LED所发射的光有时是必要的。在本发明的实施例中,将滤光器安置在LED所发射的光路径中。可以在滤光器上方形成保护层以在LED的处理和/或操作期间保护滤光器。尽管在下面的示例中半导体发光器件是发射蓝光或UV光的III-氮LED,但是可以使用除了诸如激光二极管的LED之外的半导体发光器件以及由诸如其他的III-V材料、III-磷化物、III-砷化物、II-VI材料、ZnO或基于Si的材料之类的其他材料系统所制得的半导体发光器件。
图2是附接到底座的一组LED 60的俯视图。在图2中,图示了以2x2阵列附接到底座62的四个LED 60。如本申请所指示的,可以以任何合适的布置将单个LED或任意数目的LED 60附接到底座62。在一些实施例中,使用底座62上的接合垫72来向LED 60供应功率。
以下图中的任一LED 60可以是例如被配置成从该LED的顶表面发射大部分光的倒装芯片器件。在图1中图示了合适的LED 60的一个示例,但是可以使用任何合适的LED。为了形成III-氮LED,如本领域中已知的,首先在生长衬底上生长III-氮半导体结构。生长衬底可以是任何合适的衬底,诸如例如蓝宝石、SiC、Si、GaN或复合衬底。半导体结构包括夹在n型区和p型区之间的发光区或有源区。可以首先生长n型区,并且其可以包括不同组分和掺杂浓度的多个层,例如该多个层包括诸如缓冲层或成核层、和/或被设计成促进生长衬底的去除的层之类的制备层(该制备层可以是n型或非有意掺杂的),以及针对发光区高效地发射光所期望的特定光学、材料或电学性质而设计的n型或者甚至p型器件层。在n型区上方生长发光区或有源区。合适的发光区的示例包括单个厚的或薄的发光层,或者包括由屏障层所分隔的多个薄的或厚的发光层的多个量子阱发光区。然后,可以在发光区上方生长p型区。与n型区相似,p型区可以包括不同组分、厚度和掺杂浓度的多个层,该多个层包括非有意掺杂的层或n型层。器件中所有半导体材料的总厚度在一些实施例中小于10μm并且在一些实施例中小于6μm。在一些实施例中,首先生长p型区,接着是有源区和n型区。
在p型区上形成金属p触点。如果大部分光是通过与p触点相对的表面被导出半导体结构(诸如在倒装芯片器件中),则p触点可以是反射性的。可以通过由标准光刻操作使半导体结构图案化并对该半导体结构进行蚀刻以去除p型区的整个厚度的一部分和发光区的整个厚度的一部分以形成露出在其上形成金属n触点的n型区的表面的台面,来形成倒装芯片器件。可以以任何合适的方式形成台面和p触点以及n触点。形成台面和p触点以及n触点对于本领域技术人员是熟知的。
图3是附接到底座62的四个LED 60的简化的截面视图。LED可以是2x2阵列、线性阵列或任何其他合适的布置的一部分。在单个底座62上可以安装比所图示的四个更多或更少的LED。可以通过p触点及n触点、金球凸点(gold stud bump)或任何其他合适的连接机制将LED 60连接到底座62。可以将诸如环氧树脂、硅树脂或任何其他合适材料之类的底部填充料注入LED下方、LED 60与底座62之间的任何空间中。在诸如去除生长衬底之类的稍后的处理步骤期间,底座62和底部填充可以机械地支撑半导体结构。可以使用任何合适的底座。合适底座的示例包括具有用于形成到半导体结构的电连接的导电过孔的绝缘或半绝缘晶片(诸如硅晶片或陶瓷晶片)、金属结构或任何其他合适的底座。在一些实施例中,在半导体结构上形成厚的金属接合垫以在诸如去除生长衬底之类的处理期间支撑半导体结构。可以在将LED 60附接到底座62之前或之后部分地或总体地去除生长衬底,或者生长衬底可以留下作为器件的一部分。通过去除生长衬底所暴露的半导体结构可以被粗糙化、图案化或者纹理化以提高光提取。
在与图3所图示的过程相独立的过程中,制备波长转换结构,如图4、5和6中所图示的。
在图4中,在波长转换结构100上形成滤光器层102。波长转换结构100是预先制作的波长转换构件(即与图3的LED 60和底座62相分离地形成的自支撑(self-supporting)波长转换构件),其包括吸收由LED发射的光并发射不同波长的光的一种或多种波长转换材料。合适的波长转换结构100的一个示例是自支撑波长转换陶瓷板。波长转换陶瓷可以是例如被烧结成自支撑板的粉末磷光体。除了磷光体自身,该板一般不包含结合剂材料。合适的板可以例如在一些实施例中是至少50μm厚,在一些实施例中不超过500μm厚,在一些实施例中至少100μm厚,并且在一些实施例中不超过300μm厚。合适的波长转换结构100的另一示例是安置于透明材料中以形成自支撑结构的粉末波长转换材料。合适的透明材料的示例包括硅树脂、玻璃和环氧树脂。
波长转换结构100中的(多种)波长转换材料可以是常规的磷光体、有机磷光体、量子点、有机半导体、II-VI或III-V半导体、II-VI或III-V半导体量子点或纳米晶体、染料、聚合物或发光的材料。可以使用任何合适的粉末磷光体,包括但不限于基于石榴石的磷光体,诸如 ,(其中并且)、、、、以及基于氮的磷光体(诸如和)。
波长转换结构100可以包括单个波长转换材料、波长转换材料的混合或形成为单独的层而非混合在一起的多个波长转换材料。可以将发射不同颜色的光的波长转换材料安置在波长转换结构100的单独区域中或者将其混合在一起。
可以将滤光器层102沉积到波长转换结构100的一侧上。在一些实施例中,滤光器层102是二向色滤光器。二向色滤光器可以由诸如之类交替的(alternating)材料以及任何其他合适材料的薄层构成。滤波器层102的厚度可以在一些实施例中是至少10nm,在一些实施例中不超过5μm厚,在一些实施例中至少1μm厚,并且在一些实施例中不超过2μm厚。滤光器层102中总的层数在一些实施例中可以是至少2层,在一些实施例中不超过50层,在一些实施例中至少10层,并且在一些实施例中不超过30层。每个层可以是相同的厚度或者可以使用不同厚度的层。可以通过包括塔形电子管溅射、DC溅射、等离子气相沉积、化学气相沉积以及蒸发的任何合适技术将二向色滤光器层102沉积在波长转换结构100上。
在一些实施例中,如图10中所图示的,在波长转换结构100与滤光器102之间安置平滑层103。波长转换结构100的表面可以在滤光器102的有效性方面发挥作用。在一些实施例中,如果滤光器102更平滑,则其性能得以改进;相应地,可以在沉积滤光器102之前在波长转换结构100上形成平滑层103,该平滑层103被设计成形成在其上安置滤光器102的平滑表面。例如,波长转换陶瓷板可以具有10nm与600μm之间的表面均方根(RMS)粗糙度。如果在一些实施例中RMS粗糙度大于例如300μm,则可以在形成滤光器102之前在波长转换结构100上方形成平滑层103。平滑层103可以是例如、一种或多种硅氧化物、一种或多种钛氧化物、一种或多种硅氮化物、一种或多种过渡金属氧化物,或者一种或多种过渡金属氮化物。平滑层103可以例如在一些实施例中是至少5nm厚,在一些实施例中不超过500μm厚,在一些实施例中至少1μm厚,并且在一些实施例中不超过20μm厚。
二向色滤光器层102的厚度中的变化可能不合期望地增加从器件中提取的“颜色云”(即从器件提取的颜色点的分布)的尺寸和/或干扰对于由波长转换材料和LED所发射的组合光谱的颜色标靶。
相应地,在图5中,在滤光器层102上面创建了清楚的(clear)非波长转换保护层104。该保护层104可以包括例如硅树脂复合物KJR9222A/B和KRJ9226D,以及其他材料。在一些实施例中,保护层104具有与滤光器层102相同的折射率,以避免在层102与104之间的边界处的损耗。可以使用包括例如丝网印刷、层压、二次成型(overmolding)、铸造等等的各种技术中的任一个来在滤光器层102上方形成保护层104。
为了促进保护层104在滤光器层102上方的形成,滤光器层102可以经受通常2分钟与30分钟之间的诸如氧等离子体、UV臭氧等等的处理。为了最大化该处理的有效性,该处理与保护层104的形成之间的延迟(如果有的话)不应当超过几小时。
保护层104的厚度将取决于对于微珠爆破(micro-bead blasting)效果或减小厚度的其他过程的预期的控制度,并且可以从2到100μm不等。假设常规的处理技术,则20-40μm的保护层厚度一般将是足够的。如果将硅树脂用作保护材料,则固化的时间表可以是在80℃1小时,接着在120℃1小时,并且然后接着在150℃4小时。
合适的保护层104的另一示例是光学透明固态膜,诸如形成在滤光器层102顶部的单层的或。固态保护层104的优点在于在利用与上文描述的二向色滤光器102相同的工具且同时沉积固态保护层的情况下可以减少处理步骤的数目。固态保护层104在一些实施例中可以不超过5μm厚,并且在一些实施例中不超过500nm厚。
在图6中,例如通过锯切或任何其他合适的技术在区106中对包括波长转换结构100、滤光器层102、平滑层103(如果存在)以及保护层104的结构进行划片(diced)。
在图7中,将被划片的结构附接到LED 60,所述LED 60被附接到底座62。图示了在底座62的左侧的一个接合垫110。可以通过粘合剂108将每个波长转换结构100连接到LED 60。可以使用任何合适的粘合剂。合适的粘合剂的一个示例是被安置在LED 60上方、在波长转换结构100的与滤光器层102相对的表面上或者在两个表面上的硅树脂。例如,在一些实施例中,在每个LED 60上方逐滴地分发粘合剂108(分发为一系列的滴)。
在一些实施例中,可以将波长转换材料安置在粘合剂层108中。例如,可以将粉末磷光体与硅树脂粘合剂层108进行混合,然后安置在LED 60上方。
在一些实施例中,对器件中任何波长转换结构中的波长转换材料的选择(诸如波长转换结构100和粘合剂层108、所使用的波长转换材料的量、滤光器材料和厚度)被选择成匹配由LED 60所发射的光的峰值波长,使得组合的来自LED 60的未转换的泵浦光和离开该结构的波长转换光满足预定的规格,例如用于颜色点和流明输出。
由LED 60发射的未转换光常常是从该结构提取的光的最终光谱的一部分,尽管并不需要如此。常见的组合的示例包括与黄发射波长转换材料相结合的蓝发射LED、与绿发射和红发射波长转换材料相结合的蓝发射LED、与蓝发射和黄发射波长转换材料相结合的UV发射LED,以及与蓝发射、绿发射和红发射的波长转换材料相结合的UV发射LED。可以添加发射其他颜色的光的波长转换材料以量身定制(tailor)从该结构发射的光的光谱。
在一些实施例中,LED 60发射具有蓝峰值波长的光,波长转换结构100包括吸收由LED 60发射的光且发射绿和/或黄光的一种或多种波长转换材料,并且诸如吸收来自LED 60的蓝光或来自波长转换结构100的波长转换光且发射红光的磷光体之类的波长转换材料被安置在粘合剂层108中。在一些实施例中,LED 60发射具有蓝峰值波长的光,并且波长转换结构100包括吸收由LED 60发射的光且发射绿、黄和红光中的一些或全部的一种或多种波长转换材料,使得没有附加的波长转换材料被安置在粘合剂层108中。
在图8中,在LED 60和底座62上方形成反射材料74。反射材料74填充相邻的LED 60之间的区70。反射材料74可以是例如诸如安置在诸如硅树脂之类的透明或反射支撑基体(matrix)中的TiO2或氧化铝颗粒之类的反射颗粒。可以通过包括例如将反射颗粒与支撑基体的混合物压入区70中或者模制(molding)的任何合适的技术来形成反射材料层74。如图8中所图示的,可以将反射材料74安置在每个器件上方的保护层104的顶部上方的区76中。在一些实施例中,通过诸如促进在接合垫110上方形成反射材料的较薄区112的模制之类的技术来形成反射材料74,如图8中所图示的。
在图9中,使反射材料74变薄以暴露LED 60上方的保护层104的顶部78并且暴露区114中的接合垫110。当反射材料74被去除时保护层104保护滤光器层102免受损坏。可以通过包括例如蚀刻或诸如微珠爆破、湿珠爆破、干珠爆破和磨削之类的机械技术的任何合适的技术来去除过多的反射材料74。例如,在干珠爆破中,80μm的小苏打颗粒在气流中撞击反射材料74的表面。在另一示例中,在湿珠爆破中,将水浆中的180μm的塑料颗粒引导至反射材料74的表面处。由于不同蚀刻机制的原因,当保护层104为硅树脂时干珠爆破是合适的,并且当保护层104为硅树脂或诸如之类的固态材料时湿珠爆破是合适的。
保护层104保护并保存滤光器层102的厚度,潜在地避免可能不合期望地增加颜色点云的厚度变化。保护层104应当足够厚以适应被用来去除过多反射材料74的技术的去除变化而不允许滤光器层102的穿通损坏。反射材料74比起保护层104,可以不太耐受去除过程。用来去除过多反射材料74的技术可以促进保护层104的表面粗糙化,该表面粗糙化可以改进光提取。
在一些实施例中,在去除了过多的反射材料74之后,保护层104的顶表面78被暴露,如图9中所图示的。区70中的在LED 60之间的反射材料74防止光从LED 60的侧面和波长转换结构100的侧面逃逸,使得通过LED 60的顶部、波长转换结构100以及滤光器层102的大部分光被提取。在一些实施例中,反射材料74与LED 60的侧面、波长转换结构、滤光器102以及保护层104的一部分直接接触,如图9中所图示的。在一些实施例中,反射材料74的顶表面与保护层104的顶表面78齐平(平面化)。
在一些实施例中,保护膜68的顶表面78被粗糙化、纹理化或者图案化以改进光提取。可以通过去除过多反射材料74的同一过程或者在一个或多个单独的处理步骤中在表面上形成粗糙化、纹理化或者图案化。
虽然已经详细描述了本发明,但是本领域技术人员将领会的是,给定本公开,可以在不偏离本文描述的发明构思的精神的情况下作出本发明的修改。因此,并不意图将本发明的范围限制到所图示和描述的具体实施例。
Claims (15)
1.一种方法,包括:
提供附接到底座的多个LED;
将滤光器附接到所述多个LED中的至少一个;
在所述滤光器上方形成保护层;
在所述底座上方形成反射层;以及
去除安置在所述保护层上方的反射层的一部分。
2.如权利要求1所述的方法,还包括:在波长转换结构上形成滤光器,其中将滤光器附接到所述多个LED中的至少一个包括将所述波长转换结构粘附到所述LED。
3.如权利要求2所述的方法,其中所述波长转换结构是波长转换陶瓷。
4.如权利要求2所述的方法,其中所述滤光器是二向色滤光器。
5.如权利要求2所述的方法,其中将所述波长转换结构粘附到所述LED包括在所述波长转换结构和所述LED之间安置硅树脂接合层。
6.如权利要求5所述的方法,还包括:将波长转换材料安置在所述硅树脂接合层中。
7.如权利要求2所述的方法,其中在波长转换结构上形成滤光器包括在波长转换结构的晶片上形成滤光器,所述方法还包括在将所述波长转换结构粘附到所述LED之前对所述波长转换结构的晶片进行划片。
8.如权利要求2所述的方法,还包括:在形成滤光器之前,在所述波长转换结构上方安置材料以形成平滑的表面。
9.一种结构,包括:
附接到底座的多个LED;
安置在所述LED上方的滤光器;
安置在所述滤光器上方的透明层;以及
安置在相邻LED之间的反射材料。
10.如权利要求9所述的结构,还包括:安置在所述滤光器和所述多个LED之间的波长转换结构。
11.如权利要求10所述的结构,其中,所述波长转换结构是波长转换陶瓷。
12.如权利要求10所述的结构,还包括:安置在所述波长转换结构和所述多个LED之间的接合层。
13.如权利要求12所述的结构,还包括:安置在所述接合层中的波长转换材料。
14.如权利要求9所述的结构,其中,所述滤光器是二向色滤光器。
15.如权利要求9所述的结构,还包括:安置在所述滤光器和所述波长转换结构之间的平滑层。
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TW201429007A (zh) | 2014-07-16 |
JP6535598B2 (ja) | 2019-06-26 |
WO2014072871A1 (en) | 2014-05-15 |
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US9543478B2 (en) | 2017-01-10 |
TWI631736B (zh) | 2018-08-01 |
US20150280076A1 (en) | 2015-10-01 |
KR20150082543A (ko) | 2015-07-15 |
EP2917937B1 (en) | 2016-11-16 |
EP2917937A1 (en) | 2015-09-16 |
US20160315070A1 (en) | 2016-10-27 |
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