TW201423841A - 沉積非晶質矽薄膜的方法 - Google Patents
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- 238000000151 deposition Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000012545 processing Methods 0.000 claims description 23
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 3
- 230000006378 damage Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 14
- 239000010408 film Substances 0.000 description 35
- 239000010410 layer Substances 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 5
- 229910008051 Si-OH Inorganic materials 0.000 description 4
- 229910006358 Si—OH Inorganic materials 0.000 description 4
- 230000032798 delamination Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004720 dielectrophoresis Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Abstract
依據本發明，提供一種於一腔室內使一非晶質矽層沉積於一半導性或絕緣性之基材之一表面上的方法，其中，此表面係於沉積非晶質矽層前以一NH3電漿預熱。
Description
本發明係有關於沉積非晶質矽薄膜且特別是具有3μm厚度或以上的厚度之此等薄膜的方法。
已發現當尋求沉積較厚非晶質矽薄膜，諸如，具有3μm或以上之厚度者，薄膜與基材表面之黏著會具有顯著問題。現今，此限制非晶質矽薄膜之用途，特別是於MEMS產業。
非晶質矽係非晶狀同素異形式之矽。其可以薄膜沉積於各種基材上，對於各種電子應用提供獨特能力。非晶質矽係用於微電機系統(MEMS)及奈米電機系統(NEMS)、太陽能電池、微晶狀及微非晶質矽、大規模生產，甚至可用於各種基材上之輥-輥加工技術。非晶質矽薄膜之特別MEMS應用係：1.薄膜裝置，包括用於色彩或紅外線感應之光二極體或薄膜電晶體或用於壓力感應器之壓電電阻器；2.微流體應用之玻璃蝕刻的遮蔽層，或甚至作為一介電泳晶片中之薄電極，因為其於高濃縮HF溶液中之良好電阻；
3.電容式超音波感測器之微製造的犧牲層，因為其於鹼性溶液(TMAH或KOH)簡單移除；4.藉由XeF2蝕刻乾式脫離移除a-Si：H薄膜界定用於機械式RF磁場調變之壓電共振器之奈米間隙；5.提供用於陽極結合之一中間層以便改良結合品質或製造奈米流體通道。
申請人已發展出一種用於改良a-Si：H薄膜之黏著，且於特別實施例中之另外特徵，降低應力及改良均勻性之方法。
本發明包含一種於一腔室內使一非晶質矽層沉積於一基材之一表面上的方法，其中，此表面係於沉積非晶質矽層前以一NH3電漿預熱。
於本發明之實施例，NH3電漿可具有下列處理條件之至少一者：(a)於150-250W範圍供應之一RF功率；(b)NH3流速係於80與110sccm間；(c)腔室壓力係於800-1000毫托耳(m Torr)間；(d)NH3電漿係操作約5分鐘。
基材可由矽或一含矽之材料製成。基材可為矽或玻璃(SiO2)。基材可以一二氧化矽或氮化矽中間層塗層。但是，本發明不限於此等實施例。
較佳係藉由一惰性氣體流使基材橫越其寬度加熱至一固定溫度，以便改良其後處理步驟之均勻性。方便
地，惰性氣體係N2。
非晶質矽薄膜可使用SiH4作為處理氣體沉積，且此可於一載體氣體(例如，氬氣)進行。
典型上，腔室包含一平台。沉積非晶質矽薄膜期間之平台溫度可於200℃與350℃間，例如，200℃。較佳地，腔室壁係於~75℃，且若一噴淋頭被用於遞送處理氣體時，噴淋頭若使用時可具有200℃範圍之溫度。
當以如上方式沉積時，非晶質薄膜之應力可為低，例如，少於或等於50MPa。
雖然本發明已於上作界定，需瞭解其包含如上或於下列說明、圖式或申請專利範圍中所述之特徽之任何發明組合。
1‧‧‧真空加工腔室
2‧‧‧泵取孔
3‧‧‧基材
4‧‧‧平台
5‧‧‧噴淋頭組成
6‧‧‧面板
7‧‧‧底板
8‧‧‧氣體入口
9‧‧‧孔洞
10‧‧‧容積
11‧‧‧處理容積
12,13‧‧‧密封件
14‧‧‧RF功率供應器
本發明可以各種方式實施，且一特別範例現將連同附圖作說明，其中：圖1a及1b係對比(a)使用一般沉積技術及(b)使用本發明一實施例沉積時之3.2μm矽薄膜沉積之黏著測試結果；圖2係於上表面具有Si-OH鍵結之一基材之一示意結構；且圖3顯示一代表性PECVD系統之示意圖。
為了於非晶質矽沉積步驟期間改良黏著、降低應力，及改良均勻性，一新穎之NH3電漿基材處理步驟已被發展出。
舉例而言，未顯示任何脫層跡象之一低應力非晶質矽薄膜已以下列處理步驟成功地達成。處理參數係顯示於表1。
晶圓係裝載於如圖3所示之可包含一真空加工腔室之處理模組內。於圖3，一般以1描述之真空加工腔室包含一泵取孔2，其使腔室與一泵(未示出)連接。基材3係置於一平台4上，且可藉由諸如一靜電夾具之已知裝置夾持定位。腔室1進一步包含一噴淋頭組成5，其係由一面板6及一具有氣體入口8之底板7所組成。孔洞9係通過面板而形成。面板與底板間之一容積10係作為一氣體儲存器，以供氣體入口8與處理容積11間傳導。適合之密封件被提供，例如，於12及於13。一RF功率供應器14係以熟習此技之讀者充分瞭解之方式使RF功率供應至噴淋頭總成5以產生及維持一
電漿。有關於PECVD系統之組態及操作之進一步細節可於US公開案2004/0123800中發現，此案之完整內容在此被併入以供參考。
晶圓係於減壓(<0.1托耳)裝載於處理模組內，且藉由N2(>2托耳及~2000sccm)之助而達處理溫度。於此溫度，如圖3可見到般，一NH3電漿處理步驟係使用一RF(14)驅動之噴淋頭(5，6)實行。此步驟改良平台4上之基材3的表面。
NH3電漿基材處理步驟係增加經沉積之非晶質矽薄膜與基材間之黏著性質的一關鍵處理步驟。例如，200W高頻功率(13.56MHz)，900毫托耳壓力，及95sccm NH3氣流5分鐘之一NH3電漿基材處理步驟。薄膜應力可藉由於低溫沉積方法(低達200℃)操作進一步調整以供特低應力薄膜沉積(50MPa)。
實驗上，結合RF頻率、功率、壓力及氣流之最佳化處理參數之於低溫沉積之一非晶質矽薄膜能產生一超低應力(50MPa)非晶質矽薄膜。例如，於200℃之噴淋頭及平台溫度，75℃之腔室側壁溫度，以120W高頻功率(13.56MHz)、700毫托耳處理腔室壓力、120sccm之SiH4及500sccm之Ar的氣流之沉積會提供具有約109nm/分鐘之沉積速率的超低抗拉應力非晶質矽薄膜沉積(+48.1MPa)。
於圖1之a)無NH3預處理及b)NH3電漿處理，可看到此程序有關於a-Si：H薄膜(厚度3.25μm)與一矽晶圓之黏著的益處。黏著測試使用ANSI/SDI A250.10-1998(R2004)
程序。於1a)中，所有a-Si：H沉積係藉由膠帶移除，而於1b)中，無a-Si：H被移除。於薄膜上劃交叉線係確保可再現結果之程度的一部份。此等薄膜之應力可藉由改變溫度、功率、氣體流速及壓力之處理參數從抗拉分量控制成壓縮分量。例如，使平台溫度從200℃增至300℃，應力可從<50MPa抗拉調成>200MPa壓縮。藉由降低RF力率，抗拉應力亦可被增加。
可見到NH3電漿基材處理步驟已顯著增加非晶質矽薄膜黏著性質。
用以增強經沉積之薄膜的黏著性質之傳統方法可包含增加非晶質矽薄膜沉積溫度及引入一中間層，諸如，氮化矽及二氧化矽，但此二方法皆具有缺點。由於應力及熱存積(thermal budget)考量，>350℃之高溫於許多應用會不可接受，而引入另外層造成費用、複雜性，及可能之不需要薄膜於其後被移除。
下列實驗被實行以比較薄膜黏著增強。
表2中之結果顯示較高平台溫度(350℃)可增強
黏著性質，但其亦對沉積非晶質矽薄膜引入高壓縮應力。以如上範列，較高溫度沉積於-332.9Mpa高壓縮應力造成薄膜標準黏著測試10%失效。
表3及4之結晶(二者皆係對於薄膜~3.3μm)顯示具有SiN或SiO2中間層且無NH3電漿步驟之經沉積的非晶質矽薄膜之差的黏著。
表5概述表1-4之關鍵發現。即，對於遭遇真空破壞之Si、SiO2及SiN表面，除經NH3電漿處理之基材外，所有a-Si：H薄膜顯示脫層跡象。使處理溫度升至350℃大量降低脫層量；但是，此積極方法並未如以NH3電漿步驟處理之Si上之低應力200℃ a-Si：H沉積般具生產力。
瞭解a-Si：H薄膜之黏著改良的一可能機構係描述如下。已曝露於大氣之一矽表面會具有負氧化物層。於晶圓表面，矽原子經由氧原子加入一巨大共價結構內。但是，於二氧化矽之表面，矽-氧鍵於空氣中隨時間水解且形成-OH基團。因此，如表2所示，於此表面，具有Si-OH鍵結替代Si-O-Si鍵結。此表面因為-OH基團而被極化，且可與其周圍之適合化合物形成氫鍵與凡得瓦(Van der Waals)分散及偶極-偶極吸引。除了經沉積之非晶質矽的懸空鍵
外，基材表面上之此等Si-OH鍵結明顯地影響經沉積之非晶質矽薄膜與基材間之黏著性質。
因此，藉由使用NH3電漿基材處理步驟移除基材上表面上之Si-OH鍵結，經沉積之非晶質矽薄膜的黏著係顯著改良。
Claims (9)
- 一種於一腔室內使一非晶質矽層沉積於一半導性或絕緣基材之一表面上的方法，其中，該表面係於沉積該非晶質矽層前以一NH3電漿預熱。
- 如請求項1之方法，其中，該NH3電漿具有下列處理條件之至少一者：(a)於150-250W範圍供應之一RF功率；(b)該腔室壓力係於500-4000毫托耳(m Torr)間；(c)該NH3電漿係操作約1-5分鐘；及(d)該非晶質矽層係實質上無真空破壞而實行。
- 如請求項1或2之方法，其中，該基材係由矽製成。
- 如請求項1或2之方法，其中，該基材之該表面係由二氧化矽或氮化矽製成。
- 如先前請求項中任一項之方法，其中，於施加該NH3電漿前，該基材係藉由一惰性氣體流加熱至一固定溫度橫越其寬度。
- 如請求項5之方法，其中，該惰性氣體係N2。
- 如先前請求項中任一項之方法，其中，該非晶質矽薄膜係使用SiH4作為處理氣體而沉積。
- 如請求項7之方法，其中，該腔室包含一平台，且該平台溫度係於200-350℃間，例如，200℃。
- 如請求項8之方法，其中，該薄膜之應力係50Mpa。
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| US201261715411P | 2012-10-18 | 2012-10-18 | |
| GBGB1218697.9A GB201218697D0 (en) | 2012-10-18 | 2012-10-18 | A method of depositing an amorphous silicon film |
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| KR102146543B1 (ko) * | 2016-07-29 | 2020-08-20 | 주식회사 원익아이피에스 | 비정질 실리콘막의 형성 방법 |
| US10276379B2 (en) | 2017-04-07 | 2019-04-30 | Applied Materials, Inc. | Treatment approach to improve film roughness by improving nucleation/adhesion of silicon oxide |
| KR102579245B1 (ko) * | 2017-04-07 | 2023-09-14 | 어플라이드 머티어리얼스, 인코포레이티드 | 비정질 실리콘 갭충전을 개선하기 위한 표면 개질 |
| RU2661320C1 (ru) * | 2017-04-26 | 2018-07-13 | Закрытое акционерное общество Научно-инженерный центр "ИНКОМСИСТЕМ" | Способ гидрофобизации субстрата |
| CN107464743A (zh) * | 2017-07-17 | 2017-12-12 | 上海华虹宏力半导体制造有限公司 | 非晶硅薄膜成膜方法 |
| CN111295734A (zh) * | 2017-10-31 | 2020-06-16 | 朗姆研究公司 | 增加反应器处理批量大小的方法和设备 |
| CN109148263A (zh) * | 2018-07-26 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | 沉积非晶硅的成膜方法 |
| CN110970287B (zh) * | 2018-09-28 | 2022-12-02 | 长鑫存储技术有限公司 | 制备非晶硅薄膜的方法 |
| CN109616418B (zh) | 2018-12-06 | 2021-11-09 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、显示基板及其制作方法、显示装置 |
| CN111826632A (zh) * | 2019-04-22 | 2020-10-27 | 上海新微技术研发中心有限公司 | 一种非晶硅薄膜的沉积方法及沉积设备 |
| CN111589769A (zh) * | 2020-05-25 | 2020-08-28 | 常州时创能源股份有限公司 | 硅片pecvd镀非晶硅用石墨舟的清洗方法 |
| CN112760615B (zh) * | 2020-12-17 | 2023-04-28 | 武汉新芯集成电路制造有限公司 | 一种二氧化硅薄膜及其低温制备方法 |
| KR102608340B1 (ko) * | 2021-07-26 | 2023-12-01 | 주식회사 지엔테크 | 엑시머 레이저 어닐링을 이용한 초저접합 실리사이드층 형성방법 |
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| JP2014086730A (ja) | 2014-05-12 |
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| CN103938179A (zh) | 2014-07-23 |
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