CN107636197A - 赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层 - Google Patents

赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷捕捉层 Download PDF

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CN107636197A
CN107636197A CN201680029154.0A CN201680029154A CN107636197A CN 107636197 A CN107636197 A CN 107636197A CN 201680029154 A CN201680029154 A CN 201680029154A CN 107636197 A CN107636197 A CN 107636197A
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boron
precursor
adjustment layer
substrate
processing chamber
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CN107636197B (zh
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P·K·库尔施拉希萨
段子青
A·A·哈贾
Z·J·叶
A·K·班塞尔
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Applied Materials Inc
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Abstract

本发明大体上关于具有渐变组成的处理腔室调整层。在一实施例中，该调整层为硼‑碳‑氮化物(BCN)膜。该BCN膜在该膜的底部处可具有较高的硼成分。随着该BCN膜被沉积，硼的浓度可能接近零，同时碳及氮的相对浓度提高。可借着在初期使硼前体、碳前体及氮前体一同流入来沉积该BCN膜。经过第一时段之后，可降低硼前体的流动速率。在沉积该调整层期间，可在硼前体的流动速率降低时，施加RF功率以生成等离子体。

Description

赋予掺杂硼的碳膜静电夹持及极佳颗粒性能的渐变原位电荷 捕捉层
背景
技术领域
本发明实施例大体上关于处理腔室(例如半导体处理腔室)用的调整膜，及涂覆和使用所述调整膜的方法。
背景技术
下一代器件的其中一方面是从所处理的每个硅基板获得更高产量及更佳的器件良率和性能。未来诸代的NAND及DRAM器件具更多由氮氧化物沉积物所形成的多个堆栈，从而造成进料基板具有超过±200微米的弓形。在膜层沉积期间若没有足够的夹持力使基板保持平坦，会变得难以使膜性质(例如，斜角覆盖率、厚度及蚀刻选择性)达到均匀一致。
可能通过静电夹持来消除基板的弓形，从而增进膜性质的均匀性。然而，在处理腔室内涂覆有调整层以用来保护处理腔室部件，而基板的静电夹持作用经常受到所述调整层的影响。调整膜的一个示例是含硼的碳。虽然含硼的碳膜有助于静电夹持作用，但含硼的碳膜容易剥落并在基板上造成颗粒污染。调整层的另一个示例是非晶硼膜。相较于含硼的碳膜而言，非晶硼膜具有较少的剥落情形。然而，非晶硼膜具有相对高的漏电电流且进而对弓形基板的静电夹持作用产生负面影响。
因此，需要一种改善的处理腔室调整层，该调整层提供适当的颗粒性能及夹持性能。
发明内容
本发明大体上关于具有渐变组成的处理腔室调整层。在一实施例中，该调整层为硼-碳-氮化物(BCN)膜。该BCN膜在该膜的底部处可具有较高的硼成分。随着该BCN膜被沉积，硼的浓度可能接近零，同时碳及氮的相对浓度提高。可借着在初期使硼前体、碳前体及氮前体一同流入来沉积该BCN膜。经过第一时段之后，可将该硼前体的流动速率逐渐降低至零。于沉积该调整层的期间，可在该硼前体的流动速率降低时，施加RF功率以生成等离子体。
在一实施例中，沉积调整层的方法包括将硼前体、氮前体及碳前体引入处理腔室中达第一时段。在该第一时段期间，形成硼-碳-氮调整层的非晶硼基底部分。在第二时段期间，逐渐减小该硼前体的流动速率。在该第二时段期间，于该基底部分上沉积该硼-碳-氮调整层的顶部部分。该顶部部分具有逐渐减小的硼浓度分布轮廓。
在另一实施例中，夹持基板的方法包括在处理腔室内形成调整层。形成该调整层的步骤包括将硼前体、氮前体及碳前体引入处理腔室中达第一时段。在该第一时段期间，形成硼-碳-氮调整层的非晶硼基底部分。在第二时段期间，逐渐减小该硼前体的流动速率。在该第二时段期间，于该基底部分上沉积该硼-碳-氮调整层的顶部部分。该顶部部分具有逐渐减小的硼浓度分布轮廓。将基板定位在该处理腔室内的支撑件上，该支撑件包含静电夹盘，并对该支撑件施加功率以将该基板静电夹持在该支撑件上。
在另一实施例中，调整层包括硼-碳-氮膜，其中该硼-碳-氮膜具有基底部分及顶部部分，该基底部分具有均匀的硼浓度及该顶部部分具有逐渐减小的硼浓度。
附图说明
为求详细了解本发明的上述特征，可参考实施例更具体地说明以上简要阐述的本发明，所述实施例中的一些在附图中示出。然而应注意的是，附图仅示出示例性实施例，故附图不应视为是本发明范围的限制，且本发明允许做出其他等效实施例。
图1A为处理腔室的示意图，在该处理腔室中可沉积本发明的调整层。图1B为图1A的处理腔室的基板支撑组件的局部放大图。
图2根据本发明一实施例示出调整层的剖面图。
图3为根据本发明一实施例的用来沉积调整层的方法的流程图。
图4A根据本发明一实施例示出在沉积调整层期间，含硼前体气体的流动速率图。
图4B根据本发明一实施例示出在沉积调整层期间RF功率的施加的示图。
图5示出本发明调整层与常规调整层的颗粒性能的比较图。
图6A及图6B示出本发明调整层与常规调整层的夹持性能的比较结果。
图7A示出在使用常规调整层进行调整的处理腔室中处理后的基板。图7B示出在使用本发明调整层进行调整的处理腔室中处理后的基板。
为帮助理解，尽可能地使用相同组件符号来代表附图中共同的相同要素。无需多做说明，便能思及可将一实施例中的要素及特征有利地并入其他实施例中。
具体实施方式
本发明大体上关于具有渐变(graded)组成的处理腔室调整层。在一实施例中，该调整层为硼-碳-氮化物(BCN)膜。该BCN膜在该膜的底部处可具有较高的硼成分。随着该BCN膜被沉积，硼的浓度可能接近零，同时碳及氮的相对浓度提高。可借着在初期使硼前体、碳前体及氮前体一同流入来沉积该BCN膜。经过第一时段之后，可将该硼前体的流动速率逐渐降低至零。于沉积该调整层的期间，可在该硼前体的流动速率降低时，施加RF功率以生成等离子体。
图1A为处理腔室100的示意性剖面图，在该处理腔室中可沉积本发明的调整层。处理腔室100包括基板支撑组件101，基板102在该基板支撑组件101上被处理。处理腔室100可以是化学气相沉积(CVD)处理腔室、热灯丝化学气相沉积(HWCVD)处理腔室、蚀刻腔室或用于处理基板的其他真空腔室。
处理腔室100包含腔室主体103，腔室主体103具有顶部104、腔室侧壁105及腔室底部106且该等部位连接至接地145。顶部104、腔室侧壁105及腔室底部106限定内部处理区域107。腔室侧壁105可包括基板传送口108以便于传送基板102进入及离开该处理腔室100。基板传送口108可耦接至基板处理系统的传送室和/或其他腔室。
腔室主体103的尺寸及处理腔室100的相关部件并未加以限制，且通常按比例地大于将在腔室中进行处理的基板102。基板尺寸的示例包括200毫米的直径、250毫米的直径、300毫米的直径及450毫米的直径，等等。
在一实施例中，泵装置109耦接至该处理腔室100的底部106以用来抽空及控制该处理腔室100内的压力。泵装置109可以是常规粗抽泵、鲁氏鼓风机(roots blower)、涡轮泵或适用于控制该内部处理区域107中的压力的其他类似装置。在一示例中，该处理腔室100的内部处理区域107中的压力水平可维持在低于约760托(Torr)。
气体面板110经由气体管线111供应工艺气体、前体气体及其他气体进入该腔室主体103的内部处理区域107中。如有需要，气体面板110可配置成提供一或更多种工艺气体源、清洗气体、惰性气体、非反应性气体及反应性气体。喷淋头112配置在处理腔室100的顶部104下方，且喷淋头112以隔开的方式配置在该基板支撑组件101上方。由此，当基板102被定位在基板支撑组件101上以执行处理时，喷淋头位于基板102上方。由气体面板110所提供的一或更多种工艺气体可经由喷淋头112供应反应性物种至该内部处理区域107中。喷淋头112亦可作为电极以使功率与该内部处理区域107中的气体耦合而例如从该等气体生成离子化物种。考虑可利用其他电极或装置使功率与该内部处理区域107中的气体耦合。
电力供应器113可通过匹配电路114耦接至喷淋头112。在一示例中，电力供应器113可供应高频RF能量至喷淋头112。由电力供应器113施加于喷淋头112的能量与配置在该内部处理区域107中的工艺气体被感应耦合以维持该处理腔室100内的等离子体。或者(或除了电力供应器113之外)，可使功率与该处理区域107中的工艺气体被电容耦合以维持该处理区域107内的等离子体。可由控制器(图中未示出)控制电力供应器113的运作，该控制器亦可控制处理腔室100中的其他部件的运作。
图1B是图1A的处理腔室100的基板支撑组件101的局部放大图。基板支撑组件101包括静电夹盘(ESC)115，静电夹盘115用于将配置在该夹盘115上的基板102夹持住。在处理过程中，ESC 115将基板102固定于基板支撑组件101上。ESC 115可由介电材料形成，例如可由陶瓷材料(例如，氮化铝(AlN)或其他合适的材料)形成。ESC 115使用静电吸引力将基板102保持于基板支撑组件101上。
ESC 115包括夹持电极116，夹持电极116通过配置在电源117与夹持电极116之间的隔离变压器118而连接至电源117。隔离变压器118可视需要为电源117的一部分。电源117可对夹持电极116施加约50伏特(volt)与约5000伏特之间的夹持电压。视情况需要，该基板支撑组件101可包括以下其中一者或更多者：加热器119(加热器119具有耦接至电源供应器162的加热元件161)、冷却底座(图中未示出)或设施板160。在该ESC 115上可配置有涂层或层以抑制电流泄漏且减少该处理腔室100内的颗粒污染。在一示例中，该涂层或层为调整层220。
在替代实施例中，可附加地使用RF滤波电路，或用RF滤波电路作为隔离变压器118的替代物。RF滤波电路可经调整以拦阻任何可能对该电源117造成干扰的寄生性RF分量(parasitic RF component)，从而使ESC 115的夹持能力最大化。在一示例中，该RF滤波电路可包括50nF的电感器(inductor)，该电感器可过滤掉约为13.56MHz的高频射频(HFRF)。
在一示例中，ESC 115可以是约翰森-雷贝克(JR)单极夹盘(Johnsen-Rahbeckmonopolar chuck)，该JR单极夹盘使用JR力来夹持基板，而不是使用库仑力来夹持基板。当使用JR力时，夹持力会随着接触面积的增加和/或随着有效电压的提高(例如提高电力供应和/或减少漏电电流)而提高。如以下所述，调整层能够影响漏电电流，从而能够影响ESC的夹持能力。
图2示出根据本发明一实施例的调整层220的剖面图。图中所示的调整层220配置在基板支撑组件101上。然而应明白，调整层220可配置在该处理腔室的其他内部表面上。调整层220为渐变(graded)调整层，该渐变调整层具有渐变或逐渐减小的浓度的一或更多种元素。
在一示例中，调整层220含有渐变浓度的硼。在这样的示例中，在该调整层220的基底部分222a处的浓度高于该调整层220的顶部部分222b处的浓度。虽然图2中显示该调整层220具有多个子层，但应了解，该调整层220可以是连续形成且具有渐变组成的单层。调整层220可以是硼-碳-氮膜，该硼-碳-氮膜具有以下组成：约1摩尔％(mol％)至10摩尔％范围内的氮、约20摩尔％至50摩尔％范围内的碳、及从基底部分222a处为约80摩尔％至约90摩尔％范围内至该顶部部分222b处为零浓度的硼。在一实施例中，可预期到，在该调整层220的基底部分222a中可具有相对恒定的硼浓度，随后在该顶部部分222b中，硼的浓度开始逐渐递减至零。在这样的实施例中，该基底部分222a可具有约至约的厚度以及均匀的硼浓度，例如约85摩尔％至约95摩尔％的硼浓度。在沉积该基底部分222a之后，硼的浓度可逐渐递减至零且同时持续沉积总厚度在约至约(例如约至约)的范围内的碳-硼-氮膜。
图3为根据本发明一实施例的用来沉积调整层的方法390的流程图。方法390始于操作步骤391。在操作步骤391中执行清洗操作。于蚀刻工艺、沉积工艺或其他工艺之后，在处理腔室(例如，处理腔室100)中执行该清洗操作。该清洗工艺去除该处理腔室的内部表面上的任何颗粒污染物或早先沉积的腔室调整物。合适的清洗气体可包括以下其中之一或更多者：O2、Ar或NF3或以上气体所形成的自由基或离子。
抽除该等清洗气体之后，在操作步骤392期间，将一或更多种前体气体引入该处理腔室中以沉积该调整层220的基底部分222a(如图2中所示)。该一或更多种前体气体将硼、碳及氮引入该处理腔室。该一或更多种前体气体可包括含碳前体、含氮前体及含硼前体。可经由相同或不同的气体入口将该一或更多种前体气体引入该处理腔室中。
示例性的含碳前体包括丙烯、乙炔、乙烯、甲烷、己烷、异戊二烯及丁二烯，等等。可用约100sccm至约2000sccm范围内的流动速率将该含碳前体气体引入该处理腔室中。示例性的含氮前体包括吡啶、脂族胺类(aliphatic amines)、胺类(amines)、腈类(nitriles)及氨，等等。可用约500sccm至约15000sccm范围内的流动速率将该含氮前体气体引入该处理腔室中。在初期可用约500sccm至约4000sccm范围内的流动速率将该含硼前体引入该处理腔室中。示例性的含硼前体包括二硼烷(diborane)、邻碳硼烷(orthocarborane)及三甲基环硼氮烷(trimethylborazine)，等等。在操作步骤392期间，形成该调整层220的第一部分。该调整层220的第一部分是非晶硼膜。在该等前体气体热分解期间会形成该非晶硼膜。由于含硼前体远比含碳前体及含氮前体容易解离，因此在操作步骤392期间所形成的该非晶碳膜可能含有约80摩尔％至约100摩尔％的硼，例如含有约80摩尔％至约90摩尔％的硼。
在操作步骤393中，降低该含硼前体的流动速率，并施加RF功率。初期可用约500sccm至约4000sccm范围内的流动速率将该含硼前体引入该处理腔室中，且可将该含硼前体的流动速率逐渐减小至约零。在沉积该调整层220期间，该含碳前体及该含氮前体的流动速率可维持大致恒定，同时在形成该调整层220的过程中可降低该含硼前体的流动速率。在逐渐减少该含硼前体的同时，施加RF功率以使该等前体气体离子化。由于RF功率有助于含氮前体及含碳前体的离子化，因此该调整层220的在操作步骤393期间所形成的部分(例如，图2中所示的顶部部分222b)所包含的氮及碳的浓度高于该调整层220的在操作步骤392期间所形成的部分(例如，基底部分222a)。图4A及图4B分别示出用于方法390的含硼前体流动速率及RF功率施加情形的示例。
图4A为根据本发明一实施例示出在沉积调整层期间，含硼前体气体的流动速率图425。在时间t0时，用500sccm至约4000sccm范围内的恒定流动速率将该含硼前体气体引入处理腔室中。在图4A所示的示例中，以1000sccm的流动速率引入该含硼前体。在时间t1(时间t1可能与时间t0相隔约5秒至约30秒)，该含硼前体气体的流动速率开始逐渐减小或降低。在一示例中，时间t1可与图3中所示的操作步骤393相符。该含硼前体的流动速率持续降低直到时间t2为止，在时间t2处，该含硼前体气体的流动速率达到零。在一示例中，时间t1与时间t2之间的差为约10秒至约20秒。时间t1与时间t2之间的差经选择以在该调整层220中提供足够的硼量而减少该调整层220的剥落情形，及提供足够的非晶碳量以帮助该调整层220捕捉电荷。在静电夹盘上具有调整层220，该调整层220中的电荷捕捉作用可增进该静电夹盘的静电夹持性能。
图4B为根据本发明一实施例示出在沉积调整层期间高频RF功率的施加的示图426。可对该处理腔室施加RF功率以使该处理腔室内的一或更多种气体离子化。在一示例中，在时间t0与时间t1之间未对该处理腔室施加RF功率。不施加RF功率是仰赖该等前体气体的热分解来初步沉积调整层。该等前体气体的热分解有助于调整层附着于下方的腔室部件。在时间t1时，与逐渐减少该含硼前体气体的步骤同步执行的是对该处理腔室施加恒定水平的RF功率。RF功率的施加使该一或更多种前体气体离子化从而有助于在该调整层220中形成非晶材料。使用热能量容易地使该含硼前体气体分解，然而该等含碳前体气体及含氮前体气体可能不是那么容易分解。所施加的RF功率有助于该等含碳前体及含氮前体分解。RF功率的施加持续至时间t2，在时间t2结束该调整层220的沉积。
图5示出本发明的调整层220与常规调整层的颗粒性能比较图530。图530示出在基板上执行工艺之后，在300毫米的硅基板上找到的尺寸大于0.09微米的非期望颗粒的数目。该工艺可例如为蚀刻工艺，并在存在调整层531a～531h及220中每一个调整层的情况下执行该工艺以供比较之用。调整层531a为掺杂氮的非晶碳层，该掺杂氮的非晶碳层实质上不含硼。调整层531a造成在处理之后，该基板的表面上的颗粒计数约为130个颗粒。
调整层531b为非晶硼层。调整层531b造成在处理之后，该基板的表面上的颗粒计数约为45个颗粒。调整层531c为堆栈式调整层，该堆栈式调整层具有由非晶硼所形成的第一层及配置在第一层上且由掺杂氮的非晶碳所形成的第二层。调整层531c造成在处理之后，该基板的表面上的颗粒计数约为50个颗粒。调整层531d为掺杂硼的非晶碳层，整个掺杂硼的非晶碳层具有均匀的硼浓度。在一示例中，该调整层531d的组成为含有约50摩尔％的硼。调整层531d造成在处理之后，该基板的表面上的颗粒计数约为140个颗粒。
调整层531e是使用约500－1000sccm范围内的氮前体流量设定点及约1000－2000sccm范围内的硼前体流量设定点所形成的非晶碳层。调整层531e造成在处理之后，该基板的表面上的颗粒计数约为190个颗粒。调整层531f是使用约5000－10000sccm范围内的氮前体流量设定点及约1000－2000sccm范围内的硼前体流量设定点所形成的非晶碳层。因此，调整层531f的氮浓度高于调整层531e的氮浓度。调整层531f造成在处理之后，该基板的表面上的颗粒计数约为105个颗粒。调整层531g是使用约5000－10000sccm范围内的氮前体流量设定点及约500－1000sccm范围内的硼前体流量设定点所形成的非晶碳层。因此，调整层531g的硼浓度低于调整层531f的硼浓度。调整层531g造成在处理之后，该基板的表面上的颗粒计数约为70个颗粒。
调整层531h是使用约5000－10000sccm范围内的氮前体流量设定点及从约500－1000sccm范围内开始并逐渐降至200sccm的硼流量设定点所形成的非晶碳层。可使用图4A的硼气体流量分布轮廓来形成该调整层531h。调整层531h造成在处理之后，该基板的表面上的颗粒计数约为80个颗粒。如以上所述般地形成调整层220。调整层220是使用约5000－10000sccm范围内的氮流量设定点及从约500－1000sccm开始并逐渐降至零的硼流量设定点所形成的非晶碳膜。调整层531h造成在处理之后，该基板的表面上的颗粒计数约为35个颗粒。为进一步比较，在缺少调整层的情况下，经处理的基板所具有的颗粒计数将会超过250个。
图6A及图6B示出本发明的调整层与常规调整层的夹持性能的比较结果。图6A示出在整个基板上等距间隔的49个径向点的归一化后的基板厚度(在参考点处所测得的平面基板厚度对比在参考点处所测得被夹持着的基板的厚度)。“基线”示出夹持在支撑件上的平面基板的厚度分布轮廓。因此，被完全夹持住的基板将会具有与该基线轮廓相匹配的厚度分布轮廓。如图6A中所示，调整层531a及调整层531d各自造成该基板的平坦夹持。虽然图中未示出，但调整层220的图形也是类似的分布轮廓。然而，虽然调整层531a及调整层531d各自造成基板的完全夹持，但调整层531a及调整层531d各自会在经处理的基板上造成令人不满意的高颗粒计数，如图5中所示。调整层531b及调整层531c各自具有显示出基板呈凹状弯曲的归一化厚度分布轮廓，表示这是局部被夹持住的基板。
图6B示出本发明的调整层220的漏电电流对比常规调整层531a、531b及531d的漏电电流。如图所示，调整层220的漏电电流明显少于常规调整层531b及531d的漏电电流。此外，调整层220的漏电电流大小是常规调整层531a的漏电电流的10倍以内，同时如图5中所示，调整层220提供明显优于常规调整层531a的颗粒性能。因此，调整层220能够提供与常规调整层大致相等的电荷捕捉或夹持性能，同时能大幅减少经处理后的基板上的颗粒污染。
图7A示出在使用常规调整层进行调整的处理腔室中处理后的基板750a。图7B示出在使用本发明调整层进行调整的处理腔室中处理后的基板750b。基板750a展示出在该基板的背面752上的沉积环751。会出现沉积环751是由于静电夹盘不能固定基板750a以使基板750a成为平坦构造(planar configuration)，导致基板750a在处理期间发生凹状弯曲所造成。尤其是，由于该基板750a的背面752的有些部分在处理期间被暴露，因此材料能够沉积在该背面752上。如上所述，常规调整层往往具有不充分的电荷捕捉能力(例如，较高的电流漏电情形)而对涂有常规调整层的夹盘的静电夹持性能造成负面影响。降低的夹持性能导致该基板750a的背面752的一些部分在处理期间被暴露。沉积环751的存在会对器件性能造成负面影响，且在某些情况下可能导致损失整个基板750a。
相较之下，图7B中的基板750b是在使用本发明调整层220调整的处理腔室中进行处理。相较于常规调整层而言，调整层220通过增进的电荷捕捉作用而帮助提升夹持性能，甚至在约300℃至约650℃间的温度下亦然。因此，在处理期间能夹持该基板750b(即使具有高达+/-400微米的弓形)并使该基板750b保持平坦构造。由于该基板750b在处理期间是平坦的，因此在基板750b的背面上不会成长出沉积环。
本发明所公开的调整层的好处包括减少基板上的颗粒污染以及增进电荷捕捉作用(例如，降低电流泄漏)。本发明所公开的调整层包括逐渐减小的硼浓度分布轮廓。在靠近该调整层的基底处具有相对较高的硼浓度有助于提高对于腔室部件(例如由氧化铝或氮化铝所制成的部件)的附着力。本发明公开的调整层的附着力提高使该调整层减少剥落从而导致减少颗粒污染。在靠近该调整层的顶部部分处具有相对较低的硼浓度提高了电荷捕捉作用。因此，本发明所公开的调整层的漏电电流减小，并且使用本发明所公开的调整层调整的基板支撑件的夹持性能被改进。
尽管以上内容针对本发明的数个实施例，但在不偏离本发明基本范围下，可做出本发明的其他及进一步实施例，且本发明的范围由后附权利要求所决定。

Claims (15)

1.一种沉积调整层的方法，包括以下步骤：
将硼前体、氮前体及碳前体引入处理腔室中达第一时段；
在所述第一时段期间，形成硼-碳-氮调整层的非晶硼基底部分；
在第二时段期间，逐渐减小所述硼前体的流动速率；及
在所述第二时段期间，于所述基底部分上沉积所述硼-碳-氮调整层的顶部部分，所述顶部部分具有逐渐减小的硼浓度分布轮廓。
2.如权利要求1所述的方法，其中所述硼前体、所述氮前体及所述碳前体在所述第一时段期间被热分解。
3.如权利要求1所述的方法，进一步包括以下步骤：对所述处理腔室施加RF功率以使所述硼前体、所述氮前体及所述碳前体离子化，其中在所述第二时段期间内施加所述RF功率。
4.如权利要求1所述的方法，其中所述第一时段在约5秒至约30秒的范围内，以及其中所述第二时段在约10秒至约20秒的范围内。
5.如权利要求1所述的方法，进一步包括以下步骤：在将所述硼前体、所述氮前体及所述碳前体引入处理腔室内之前，先将清洗气体引入所述处理腔室内，其中所述清洗气体包括O2、Ar及NF3其中一者或更多者。
6.如权利要求1所述的方法，其中所述硼前体选自于由二硼烷、邻碳硼烷及三甲基环硼氮烷所构成的群组中。
7.如权利要求1所述的方法，其中所述氮前体选自于由吡啶、脂族胺类、胺类、腈类及氨所构成的群组中，以及其中所述碳前体选自于由丙烯、乙炔、乙烯、甲烷、己烷、异戊二烯及丁二烯所构成的群组中。
8.如权利要求1所述的方法，其中所述硼-碳-氮调整层被沉积到约至约的厚度。
9.一种夹持基板的方法，包括以下步骤：
在处理腔室内形成调整层，包括以下步骤：
将硼前体、氮前体及碳前体引入处理腔室中达第一时段；
在所述第一时段期间，形成硼-碳-氮调整层的非晶硼基底部分；
在第二时段期间，逐渐减小所述硼前体的流动速率；及
在所述第二时段期间，于所述基底部分上沉积所述硼-碳-氮调整层的顶部部分，所述顶部部分具有逐渐减小的硼浓度分布轮廓；
将基板定位在所述处理腔室内的支撑件上，所述支撑件包含静电夹盘；及
对所述支撑件施加功率以将所述基板静电夹持于所述支撑件上。
10.如权利要求9所述的方法，其中所述基板是300毫米的硅晶片，且在对所述支撑件施加功率之前，所述基板具有约+/-400微米的弓形，及在对所述支撑件施加功率之后，所述基板为大致平面状。
11.如权利要求9所述的方法，其中所述硼-碳-氮调整层被沉积到约至约的厚度。
12.如权利要求11所述的方法，其中当所述基板被静电夹持到所述支撑件时，所述基板处于约300℃至约650℃间的温度。
13.如权利要求11所述的方法，其中对所述支撑件施加功率的步骤包括：使用电感器来过滤寄生RF功率，以及其中所述碳前体选自于由丙烯、乙炔、乙烯、甲烷、己烷、异戊二烯及丁二烯所构成的群组中。
14.一种调整层，包括：
硼-碳-氮膜，其中所述硼-碳-氮膜具有基底部分及顶部部分，所述基底部分具有均匀的硼浓度且所述顶部部分具有逐渐减小的硼浓度。
15.如权利要求14所述的调整层，其中所述硼-碳-氮膜包括非晶碳，以及其中所述逐渐减小的硼浓度从所述膜的所述基底部分朝向所述膜的顶表面递减。
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