TW201423834A - 接合系統、接合方法及電腦記憶媒體 - Google Patents
接合系統、接合方法及電腦記憶媒體 Download PDFInfo
- Publication number
- TW201423834A TW201423834A TW102133489A TW102133489A TW201423834A TW 201423834 A TW201423834 A TW 201423834A TW 102133489 A TW102133489 A TW 102133489A TW 102133489 A TW102133489 A TW 102133489A TW 201423834 A TW201423834 A TW 201423834A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- substrate
- bonding
- processed
- heat treatment
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims abstract description 119
- 238000010438 heat treatment Methods 0.000 claims abstract description 103
- 238000012545 processing Methods 0.000 claims abstract description 92
- 239000000853 adhesive Substances 0.000 claims abstract description 80
- 230000001070 adhesive effect Effects 0.000 claims abstract description 78
- 239000011248 coating agent Substances 0.000 claims abstract description 47
- 238000000576 coating method Methods 0.000 claims abstract description 47
- 238000003825 pressing Methods 0.000 claims abstract description 5
- 238000005304 joining Methods 0.000 claims description 62
- 238000007689 inspection Methods 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 29
- 238000004140 cleaning Methods 0.000 claims description 22
- 239000007767 bonding agent Substances 0.000 claims description 7
- 235000012431 wafers Nutrition 0.000 abstract description 494
- 239000002131 composite material Substances 0.000 abstract 1
- 230000007246 mechanism Effects 0.000 description 68
- 238000012546 transfer Methods 0.000 description 52
- 230000032258 transport Effects 0.000 description 32
- 238000003384 imaging method Methods 0.000 description 31
- 239000002904 solvent Substances 0.000 description 27
- 238000001816 cooling Methods 0.000 description 25
- 238000006073 displacement reaction Methods 0.000 description 19
- 239000012530 fluid Substances 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 229910010293 ceramic material Inorganic materials 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 239000002826 coolant Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000007781 pre-processing Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 210000003934 vacuole Anatomy 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012206555A JP2014063791A (ja) | 2012-09-20 | 2012-09-20 | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201423834A true TW201423834A (zh) | 2014-06-16 |
Family
ID=50341126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW102133489A TW201423834A (zh) | 2012-09-20 | 2013-09-16 | 接合系統、接合方法及電腦記憶媒體 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2014063791A (enrdf_load_stackoverflow) |
TW (1) | TW201423834A (enrdf_load_stackoverflow) |
WO (1) | WO2014045803A1 (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI810221B (zh) * | 2017-11-17 | 2023-08-01 | 日商濱松赫德尼古斯股份有限公司 | 吸附方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6165102B2 (ja) * | 2014-05-20 | 2017-07-19 | 東京エレクトロン株式会社 | 接合装置、接合システム、接合方法、プログラム、および情報記憶媒体 |
JP7299685B2 (ja) * | 2018-10-11 | 2023-06-28 | キヤノン株式会社 | 膜形成装置、膜形成方法および物品製造方法 |
DE102019004470B4 (de) * | 2019-06-25 | 2021-12-09 | Mühlbauer Gmbh & Co. Kg | Bauteilfördervorrichtung mit einer Einstelleinheit und Verfahren zum Einstellen einer Bauteilfördervorrichtung |
KR102610837B1 (ko) * | 2020-12-29 | 2023-12-06 | 세메스 주식회사 | 기판과 기판을 접합하기 위한 기판 접합 설비에서의 기판 보관 및 정렬 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5027460B2 (ja) * | 2006-07-28 | 2012-09-19 | 東京応化工業株式会社 | ウエハの接着方法、薄板化方法、及び剥離方法 |
JP2008182016A (ja) * | 2007-01-24 | 2008-08-07 | Tokyo Electron Ltd | 貼り合わせ装置、貼り合わせ方法 |
US20110214809A1 (en) * | 2008-11-14 | 2011-09-08 | Tokyo Electron Limited | Bonding apparatus and bonding method |
TWI497244B (zh) * | 2008-11-21 | 2015-08-21 | 尼康股份有限公司 | A holding member managing means, a stacked semiconductor manufacturing apparatus, and a holding member managing method |
JP5671265B2 (ja) * | 2010-06-10 | 2015-02-18 | 東京応化工業株式会社 | 基板の加工方法 |
JP2012069906A (ja) * | 2010-08-23 | 2012-04-05 | Tokyo Electron Ltd | 接合装置、接合方法、プログラム及びコンピュータ記憶媒体 |
JP5352546B2 (ja) * | 2010-08-25 | 2013-11-27 | 東京エレクトロン株式会社 | 接合システム、接合方法、プログラム及びコンピュータ記憶媒体 |
-
2012
- 2012-09-20 JP JP2012206555A patent/JP2014063791A/ja active Pending
-
2013
- 2013-08-26 WO PCT/JP2013/072709 patent/WO2014045803A1/ja active Application Filing
- 2013-09-16 TW TW102133489A patent/TW201423834A/zh unknown
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI810221B (zh) * | 2017-11-17 | 2023-08-01 | 日商濱松赫德尼古斯股份有限公司 | 吸附方法 |
US11865701B2 (en) | 2017-11-17 | 2024-01-09 | Hamamatsu Photonics K.K. | Suction method |
Also Published As
Publication number | Publication date |
---|---|
JP2014063791A (ja) | 2014-04-10 |
WO2014045803A1 (ja) | 2014-03-27 |
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