TW201409711A - 積體電路裝置及其製造方法 - Google Patents

積體電路裝置及其製造方法 Download PDF

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TW201409711A
TW201409711A TW102126830A TW102126830A TW201409711A TW 201409711 A TW201409711 A TW 201409711A TW 102126830 A TW102126830 A TW 102126830A TW 102126830 A TW102126830 A TW 102126830A TW 201409711 A TW201409711 A TW 201409711A
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layer
isolation
isolation layer
substrate
integrated circuit
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TWI525823B (zh
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Min-Hao Hong
You-Hua Chou
Chih-Tsung Lee
Shiu-Ko Jangjian
Miao-Cheng Liao
Hsiang-Hsiang Ko
Chen-Ming Huang
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Taiwan Semiconductor Mfg
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Abstract

本發明提供積體電路裝置及其製造方法。該積體電路包含：一積體電路裝置，包含：一基板，其中該基板具有一溝槽；一第一隔離層填入該溝槽中；一第二隔離層形成於該第一隔離層上；一磊晶成長矽晶層形成於該基板之上，並與該第二隔離層以水平方向相鄰；以及，一閘極結構形成於該磊晶成長矽晶層之上，其中該閘極結構係定義出一通道。

Description

積體電路裝置及其製造方法
本發明係關於積體電路裝置及其製造方法，更特別關於一具有隔離結構的積體電路裝置及其製造方法。
半導體裝置在許多種像是電腦、手機等等的電子裝置中所使用。半導體裝置包含積體電路，而積體電路係藉由形成多種不同材料的薄膜於半導體晶圓上，再經過圖形化後所形成。積體電路可包含場效電晶體(FETs)，例如金氧半導體型(MOS)電晶體。
半導體工業的目標之一，是持續減少每個場效電晶體的尺寸以及增加其速度。然而，在65nm製程技術下形成各自區隔的場效電晶體卻面臨了挑戰。舉例來說，蝕刻淺溝槽隔離(STI)區的溝槽形成以及將絕緣材料填入溝槽中將會更為困難。
為解決上述問題，業界提出一種方法試圖克服上述問題，該方法包含使用四乙氧基矽烷(TEOS)作為隔離材料。然而，四乙氧基矽烷(TEOS)的使用可能會導致不希望發生的元件濕度吸收問題。在更先進的場效電晶體技術中，係利高深寬比製程(高寬比製程、HARP)或旋塗式玻璃(spin-On Glass、SOG)將一氧化層形成於STI溝槽中，以達到元件隔離。但是，這些方法可能需要一個特定的溝槽剖面結構才能成功。舉例來說，需應用在一高深寬比的STI溝槽(溝槽的深度與寬度比需大於等於5)，或是需要對溝槽側壁傾斜斜率進行一特定的要求(例如，溝槽側壁的傾斜角度需等於或小於87度)。
除了上述之外，當使用高深寬比製程(高寬比製程、HARP)將絕緣材料填入STI溝槽時，會在場效電晶體的通道區引發拉伸應力，使得該場效電晶體僅適合作為NMOS元件。
另一方面，當使用高密度電漿(high density plasma、HDP)製程將絕緣材料填入STI溝槽時，會在場效電晶體的通道區引發壓應力(compressive stress)，使得該場效電晶體僅適合作為PMOS元件。
本發明一實施例提供一種積體電路裝置及其製造方法。根據本發明一實施例，該積體電路裝置包含：本發明提供積體電路裝置及其製造方法。該積體電路包含：一積體電路裝置，包含：一基板，其中該基板具有一溝槽；一第一隔離層填入該溝槽中；一第二隔離層形成於該第一隔離層上；一磊晶成長矽晶層形成於該基板之上，並與該第二隔離層以水平方向相鄰；以及，一閘極結構形成於該磊晶成長矽晶層之上，其中該閘極結構係定義出一通道。
根據本發明另一實施例，該積體電路裝置包含一矽基板，其中該矽基板具有一溝槽；一兩部份隔離結構係配置於該基板上，其中該兩部份隔離結構係包含一第一氧化層以 及一第二氧化層，該第一氧化層係填入該溝槽中並突出該矽基板之上，且該第二氧化層係包覆該第一氧化層；一磊晶成長矽晶層係形成於該矽基板之上，並與該兩部份隔離結構水平相鄰；以及，一閘極結構形成於該磊晶成長矽晶層之上，並定義出一通道。
此外，本發明其他實施例提供一種積體電路裝置的製造方法，包含：對一矽基板進行蝕刻得到一溝槽；沉積一第一隔離層填入於該溝槽中，其中該第一隔離層係突出該矽基板；形成一第二隔離層以包覆該第一隔離層；形成一磊晶成長矽晶層於該矽基板之上，其中該磊晶成長矽晶層係與該第二隔離層水平相鄰；以及，形成一閘極結構於該磊晶成長矽晶層之上，其中該閘極結構定義出一通道。
10‧‧‧場效電晶體裝置
12‧‧‧基板
14‧‧‧溝槽
16‧‧‧第一隔離層
18‧‧‧第二隔離層
20‧‧‧磊晶成長矽晶層
22‧‧‧閘極結構
24‧‧‧基板上表面
26‧‧‧第二隔離層下表面
28‧‧‧第一隔離層上表面
30‧‧‧第二隔離層側壁
32‧‧‧第二隔離層寬度
34‧‧‧第一隔離層寬度
36‧‧‧第一隔離層深度
38‧‧‧兩部份隔離結構
40‧‧‧多晶矽層
42‧‧‧閘極介電層
44‧‧‧氮化層
46‧‧‧光阻層
48‧‧‧通道
第1圖係一剖面結構示意圖，說明本發明一實施例所述之積體電路裝置。
第2-17圖係一系列剖面結構示意圖，用以說明第1圖所述之積體電路裝置其製造流程。
本發明接下來將會提供許多不同的實施例以實施本發明中不同的特徵。值得注意的是，這些實施例提供許多可行之發明概念並可實施於各種特定情況。然而，在此所討論之這些特定實施例僅用於舉例說明本發明之製造及使用方法，但非用於限定本發明之範圍。
本發明將以場效電晶體金屬氧化半導體之特定實施例來作描述。然而，本發明亦可應用在其他的半導體裝置及電路結構。為讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：請參照第1圖，係繪示本發明一實施例所述之場效電晶體裝置10。該場效電晶體裝置10包含一以兩步驟製程所形成的隔離區，形成方式將在下文詳述。該場效電晶體裝置10的隔離區具有相對低的高寬比(即約為或小於3)，且不需對該STI溝槽的剖面結構進行任何的限制。此外，該隔離區亦可藉由高密度電漿(high density plasma、HDP)製程來形成，例如可使用N90或N65 HDP-STI製程。再者，亦可利用CO11 HDP-STI製程來形成該隔離區。
仍請參照第1圖，該場效電晶體裝置10可包含一基板12、一溝槽14、一第一隔離層16、一第二隔離層18、一磊晶成長矽晶層20、以及一閘極結構22。在本發明一實施例中，該基板12可為一半導體材料，例如為一矽基板。
如第1圖所示，該第一隔離層16係填入該溝槽14中。在本發明一實施例中，該第一隔離層16係突出於該基板12(即突出該基板12的一上表面24)。在本發明一實施例中，該第一隔離層16係為高密度電漿氧化物，而形成方法可為一高密度電漿(HDP)製程。
該第二隔離層18係形成於該第一隔離層16之上。如第1圖所示，該第二隔離層18係垂直配置於該第一隔離層16 之上。
在本發明一實施例中，該第二隔離層18係包覆該第一隔離層16之上。換言之，該第二隔離層18係包該第一隔離層16之一上部部份。在本發明一實施例中，該第二隔離層18係為高密度電漿氧化物，而形成方法可為一高密度電漿(HDP)製程。。
如第1圖所示，該第二隔離層18可具有一下表面26，其中該下表面26係直接與基板12的該上表面24直接接觸，此外該下表面26亦與該第一隔離層16的上表面28直接接觸。此外，該第二隔離層18的一側壁30可與該磊晶成長矽晶層20直接接觸。
在本發明一實施例中，該第二隔離層18之水平寬度32可大於該第一隔離層16的水平寬度34，無論該寬度34係以該第一隔離層16的那一段深度來量測。換言之，第二隔離層18之水平寬度32可大於任一深度的該第一隔離層16的水平寬度34。
該第一隔離層16以及該第二隔離層18係構成一兩部份(two-part)隔離結構38。該兩部份(two-part)隔離結構38係用來使相鄰的場效電晶體裝置10達到彼此電性隔離。該兩部份(two-part)隔離結構38亦稱為淺溝槽隔離(STI)區。
仍請參照第1圖，該磊晶成長矽晶層20係成於該基板12之上。如圖所示，在本發明一實施例中，該磊晶成長矽晶層20係與該第二隔離層18水平相鄰的。在本發明一實施例中，該磊晶成長矽晶層包含一矽鍺(SiGe)材料或一III-V族摻雜半 導體材料。在本發明一實施例中，該磊晶成長矽晶層20可具有一<100>晶體矽、一<110>晶體矽、或一<111>晶體矽。然而本發明並不限定該磊晶成長矽晶層20的組成，因此該該磊晶成長矽晶層20亦可為其他習知的半導體材料。
在本發明一實施例中，該閘極結構22(即閘極堆疊)包含，舉例來說，一多晶矽層40以及一閘極介電層42，其中該多晶矽層40形成於該閘極介電層42之上。該閘極結構22可包含其他的構件，舉例來說，間隙壁、或是金屬層等(未圖示)。
請參照第2-17圖，係為第1圖所示之場效電晶體裝置10形成方法的一系列剖面結構示意圖。請參照第2圖，該方法包含提供一矽基板12。接著，如第3圖所示，形成一氮化層44於該矽基板12之上。如第4圖所示，接著形成一光阻層46於該氮化層44之上，未被該光阻層46所覆蓋的部份即被定義成一淺溝槽隔離(STI)預定區。
請參照第4-5圖，以該光阻層46作為蝕刻罩幕對該氮化層44以及該矽基板12進行一蝕刻製程，以形成該溝槽14。在本發明一實施例中，該溝槽14之高寬比係低於3。請參照第6圖，該第一隔離層16係填入該溝槽14中(即，該第一隔離層16以高密度電漿(HDP)製程填入該溝槽14，形成一高密度電漿氧化物)。接著，如第7圖所示，利用一化學機械研磨(CMP)製程對該第一隔離層16進行研磨。在該化學機械研磨(CMP)製程後，填入該溝槽14之該第一隔離層16係與該氮化層44共平面。
請參照第7-8圖，接著，將該氮化層44移除。如圖所示，在移除該氮化層44之後，使得該第一隔離層16突出該矽 基板12的上表面24。接著，如第9圖所示，坦覆性形成該第二隔離層18(即一利用高密度電漿(HDP)製程所得的高密度電漿(HDP)氧化物)於該第一隔離層16以及該矽基板12之上。接著，如第10圖所示，形成一額外的氮化層44於該第二隔離層18之上。
如第11圖所示，形成另一圖形化光阻層46於該額外的氮化層44之上，該圖形化光阻層46所覆蓋的部份即為該兩部份(two-part)隔離結構38的預定區。請參照第11-12圖，以該光阻層46作為蝕刻罩幕對該氮化層44以及該第二隔離層18進行一蝕刻製程，得到該兩部份(two-part)隔離結構38(位於該額外的氮化層44之上。
請參照第13圖，該磊晶成長矽晶層20係以該矽基板12為基礎進行磊晶成長所形成，且該磊晶成長矽晶層20係為於任兩相鄰的兩部份(two-part)隔離結構38之間。接著，如第14圖所示，對該磊晶成長矽晶層20進行一化學機械研磨(CMP)製程以移除部份的該磊晶成長矽晶層20以及位於第二隔離層18之上的該氮化層44。如第14圖所示，在該化學機械研磨(CMP)製程的步驟後，該磊晶成長矽晶層20以及該第二隔離層18係為共平面的。接著，進行一氫退火製程以修復及緩和該磊晶成長矽晶層20。根據本發明一實施例，依據該場效電晶體裝置10所欲具有的效能特性，該磊晶成長矽晶層20可具有一<100>晶體矽，一<110>晶體矽，或一<111>晶體矽。
請參照第15圖，形成一閘極介電層42、以及一多晶矽層40於第14圖所示結構之上，且閘極介電層42係形成於任 兩相鄰的該兩部份(two-part)隔離結構38之間。接著，如第16圖所示，形成一圖形化光阻層46於該多晶矽層40之上，其中該圖形化光阻層46所覆蓋的部份係為閘極結構22的預定區。請參照第16-17圖，以該光阻層46作為蝕刻罩幕對該閘極介電層42及該多晶矽層40進行一蝕刻製程，得到閘極結構22，其中該閘極結構22位於該磊晶成長矽晶層20之上，得到該場效電晶體裝置10。
本發明所述之場效電晶體裝置10其製造步驟，亦可視需要加以調整及改變。本發明所述之場效電晶體裝置10與習知之場效電晶體裝置相比，具有以下優點。第1圖所示之場效電晶體裝置10的製程排除了困難的高高寬比STI溝槽蝕刻，且無需將絕緣材料填入較窄的溝槽中。該場效電晶體裝置10具有以高密度電漿氧化物所構成的STI區，且可在40nm製程技術下形成。此外，本發明所述的場效電晶體裝置10其溝槽的高寬比可小於3，而相反的，傳統場效電晶體裝置其溝槽需要高的高寬比(需要大於5)。此外，本發明所述之場效電晶體裝置10之於溝槽的形狀並無限定。在再，該場效電晶體裝置10在該閘極結構22下的通道48具有低的張力，使得該場效電晶體裝置10適合用於PMOS以及NMOS的應用。本發明所述之場效電晶體裝置10可避免該STI張力對該通道48造成影響，且避免汲極飽和電流(Idsat)效能的損失。
前述已揭露了本發明數個具體實施方式的特徵，使此領域中具有通常技藝者得更加瞭解本發明細節的描述。此領域中具有通常技藝者應能完全明白且能使用所揭露之技術 特徵，做為設計或改良其他製程和結構的基礎，以實現和達成在此所介紹實施態樣之相同的目的和優點。此領域中具有通常技藝者應也能瞭解這些對應的說明，並沒有偏離本發明所揭露之精神和範圍，且可在不偏離本發明所揭露之精神和範圍下進行各種改變、替換及修改。
10‧‧‧場效電晶體裝置
12‧‧‧基板
14‧‧‧溝槽
16‧‧‧第一隔離層
18‧‧‧第二隔離層
20‧‧‧磊晶成長矽晶層
22‧‧‧閘極結構
24‧‧‧基板上表面
26‧‧‧第二隔離層下表面
28‧‧‧第一隔離層上表面
30‧‧‧第二隔離層側壁
32‧‧‧第二隔離層寬度
34‧‧‧第一隔離層寬度
36‧‧‧第一隔離層深度
38‧‧‧兩部份隔離結構
40‧‧‧多晶矽層
42‧‧‧閘極介電層

Claims (10)

  1. 一種積體電路裝置，包含：一基板，其中該基板具有一溝槽；一第一隔離層填入該溝槽中；一第二隔離層形成於該第一隔離層上；一磊晶成長矽晶層形成於該基板之上，並與該第二隔離層以水平方向相鄰；以及一閘極結構形成於該磊晶成長矽晶層之上，其中該閘極結構係定義出一通道。
  2. 如申請專利範圍該第1項所述的積體電路裝置，其中該第一隔離層及第二隔離層係為一高密度電漿氧化物。
  3. 如申請專利範圍該第1項所述的積體電路裝置，其中第二隔離層包覆由該構槽所露出的該第一隔離層。
  4. 如申請專利範圍該第1項所述的積體電路裝置，其中該第一隔離層係突出該基板。
  5. 如申請專利範圍該第1項所述的積體電路裝置，其中該第二隔離層的水平寬度係大於該第一隔離層的水平寬度。
  6. 一種積體電路裝置，包含：一矽基板，其中該矽基板具有一溝槽；一兩部份隔離結構係配置於該基板上，其中該兩部份隔離結構係包含一第一氧化層以及一第二氧化層，該第一氧化層係填入該溝槽中並突出該矽基板之上，且該第二氧化層係包覆該第一氧化層；一磊晶成長矽晶層係形成於該矽基板之上，並與該兩部份 隔離結構水平相鄰；以及一閘極結構形成於該磊晶成長矽晶層之上，並定義出一通道。
  7. 如申請專利範圍該第6項所述的積體電路裝置，其中該第一氧化層以及該第二氧化層係為高密度電漿氧化物。
  8. 如申請專利範圍該第6項所述的積體電路裝置，其中該第二氧化層的水平寬度係大於該第一氧化層的水平寬度。
  9. 一種積體電路裝置的製造方法，包含：對一矽基板進行蝕刻得到一溝槽；沉積一第一隔離層填入於該溝槽中，其中該第一隔離層係突出該矽基板；形成一第二隔離層以包覆該第一隔離層；形成一磊晶成長矽晶層於該矽基板之上，其中該磊晶成長矽晶層係與該第二隔離層水平相鄰；以及形成一閘極結構於該磊晶成長矽晶層之上，其中該閘極結構定義出一通道。
  10. 如申請專利範圍第9項所述之方法，其中該第一隔離層以及第二隔離層係經由一高密度氧化物沉積製程所形成。
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