TW201405769A - 功率模組、功率模組中之連接端子的安裝構造及連接端子 - Google Patents

功率模組、功率模組中之連接端子的安裝構造及連接端子 Download PDF

Info

Publication number
TW201405769A
TW201405769A TW102116666A TW102116666A TW201405769A TW 201405769 A TW201405769 A TW 201405769A TW 102116666 A TW102116666 A TW 102116666A TW 102116666 A TW102116666 A TW 102116666A TW 201405769 A TW201405769 A TW 201405769A
Authority
TW
Taiwan
Prior art keywords
connection terminal
holding member
power module
substrate
wire
Prior art date
Application number
TW102116666A
Other languages
English (en)
Chinese (zh)
Inventor
Takahiro Fujii
Jun Tominaga
Koji Ishikawa
Original Assignee
Nhk Spring Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nhk Spring Co Ltd filed Critical Nhk Spring Co Ltd
Publication of TW201405769A publication Critical patent/TW201405769A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H01R13/2421—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means using coil springs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
TW102116666A 2012-05-10 2013-05-10 功率模組、功率模組中之連接端子的安裝構造及連接端子 TW201405769A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012108676A JP2013236015A (ja) 2012-05-10 2012-05-10 パワーモジュール、パワーモジュールにおける接続端子の取付構造および接続端子

Publications (1)

Publication Number Publication Date
TW201405769A true TW201405769A (zh) 2014-02-01

Family

ID=49550746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102116666A TW201405769A (zh) 2012-05-10 2013-05-10 功率模組、功率模組中之連接端子的安裝構造及連接端子

Country Status (3)

Country Link
JP (1) JP2013236015A (fr)
TW (1) TW201405769A (fr)
WO (1) WO2013168711A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015020176A1 (ja) * 2013-08-09 2017-03-02 日本発條株式会社 通電ユニット
EP2903024B1 (fr) * 2014-01-31 2022-08-03 Vincotech GmbH Élément de contact, module semi-conducteur de puissance et son procédé de fabrication
DE102018123993B4 (de) * 2018-09-28 2022-05-25 Knorr-Bremse Systeme für Nutzfahrzeuge GmbH Kontaktiereinrichtung zum elektrischen Kontaktieren einer Stromführungseinrichtung mit einem Modul für ein Fahrzeugsystem für ein Fahrzeug, Kontaktvorrichtung mit einer Kontaktiereinrichtung und Verfahren zum Herstellen einer Kontaktiereinrichtung
DE102018123995A1 (de) * 2018-09-28 2020-04-02 Knorr-Bremse Systeme für Nutzfahrzeuge GmbH Kontaktiereinrichtung zum elektrischen Kontaktieren einer Leiterplatte mit einem Spulenkörper für ein Magnetventil für eine Bremseinrichtung für ein Fahrzeug, Magnetventil mit einer Kontaktiereinrichtung und Verfahren zum Herstellen einer Kontaktiereinrichtung
DE102018123994B4 (de) 2018-09-28 2022-05-25 Knorr-Bremse Systeme für Nutzfahrzeuge GmbH Kontaktiervorrichtung zum federbaren Kontaktieren einer Platine mit einem Kontaktelement für eine Magnetspule oder einen Sensor für ein Fahrzeugsystem, Fahrzeugsystem mit einer Kontaktiervorrichtung und Verfahren zum Herstellen einer Kontaktiervorrichtung
WO2021085216A1 (fr) * 2019-10-29 2021-05-06 三菱電機株式会社 Dispositif à semi-conducteur, dispositif de conversion de puissance électrique et procédé de production de dispositif à semi-conducteur
US11211373B1 (en) * 2021-02-22 2021-12-28 United Silicon Carbide, Inc. Double-sided chip stack assembly

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4764979B2 (ja) * 2004-06-08 2011-09-07 富士電機株式会社 半導体装置
JP5350804B2 (ja) * 2007-01-22 2013-11-27 三菱電機株式会社 電力用半導体装置
JP4868464B2 (ja) * 2007-07-06 2012-02-01 北川工業株式会社 表面実装コンタクト
JP4900165B2 (ja) * 2007-09-27 2012-03-21 三菱電機株式会社 電力半導体モジュール
JP4998838B2 (ja) * 2010-04-09 2012-08-15 山一電機株式会社 プローブピン及びそれを備えるｉｃソケット

Also Published As

Publication number Publication date
WO2013168711A1 (fr) 2013-11-14
JP2013236015A (ja) 2013-11-21

Similar Documents

Publication Publication Date Title
TW201405769A (zh) 功率模組、功率模組中之連接端子的安裝構造及連接端子
JP5933728B2 (ja) パワーモジュール用接続端子およびパワーモジュール用接続端子群
JP4607995B2 (ja) 電力用半導体装置
JP6217101B2 (ja) 半導体装置の製造方法及び取り付け治具
JP5599328B2 (ja) 電力用半導体装置とプリント配線板との接続機構
JP2015035473A (ja) コイル部品
JP6426945B2 (ja) 蓄電装置
JP5175535B2 (ja) 接触バネを有するパワー半導体モジュール
JP4304189B2 (ja) Ｉｃソケット
TW201836241A (zh) 線圈狀電子零件、線圈零件、線圈零件的製造方法、電感元件、t型濾波器、振盪電路以及電感元件的製造方法
WO2015020176A1 (fr) Borne de connexion, module de puissance et unité d'alimentation
JP5614629B2 (ja) 電源装置
JP2009130311A (ja) 圧電トランスの実装方法及び圧電トランス
US10553523B2 (en) Semiconductor device
JP2009014480A (ja) 検査冶具
WO2016031512A1 (fr) Unité de terminal d'inspection, carte sonde et procédé de fabrication d'unité de terminal d'inspection
JP5250249B2 (ja) 圧電トランス
JP2021163824A (ja) 抵抗素子及びセメント抵抗器並びにこれらの製造方法
JP5395704B2 (ja) 静電霧化装置及びその製造方法及びペルチェユニット
JP6235272B2 (ja) 半導体素子搭載用基板およびそれを備えた半導体装置
JP2018166083A (ja) 電子部品モジュール、及び電子部品モジュールの製造方法
JP6838426B2 (ja) コイル部品、及びコイル部品の製造方法
JP6842236B2 (ja) 磁気センサモジュール
KR100382227B1 (ko) 센서소자 제조기술
JP2008206314A (ja) 電源モジュール