TW201404901A - 有機層沉積設備、使用其製造有機發光顯示裝置之方法、以及以此方法製造之有機發光顯示裝置 - Google Patents
有機層沉積設備、使用其製造有機發光顯示裝置之方法、以及以此方法製造之有機發光顯示裝置 Download PDFInfo
- Publication number
- TW201404901A TW201404901A TW102114045A TW102114045A TW201404901A TW 201404901 A TW201404901 A TW 201404901A TW 102114045 A TW102114045 A TW 102114045A TW 102114045 A TW102114045 A TW 102114045A TW 201404901 A TW201404901 A TW 201404901A
- Authority
- TW
- Taiwan
- Prior art keywords
- deposition
- organic layer
- deposition source
- unit
- substrate
- Prior art date
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 708
- 239000012044 organic layer Substances 0.000 title claims abstract description 241
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000151 deposition Methods 0.000 claims abstract description 725
- 239000000758 substrate Substances 0.000 claims abstract description 173
- 239000000463 material Substances 0.000 claims abstract description 118
- 239000010410 layer Substances 0.000 claims description 58
- 238000000059 patterning Methods 0.000 claims description 45
- 238000012546 transfer Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 28
- 238000011068 loading method Methods 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000005540 biological transmission Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 11
- 238000000429 assembly Methods 0.000 claims description 10
- 230000000712 assembly Effects 0.000 claims description 10
- 230000008016 vaporization Effects 0.000 claims description 7
- 238000009834 vaporization Methods 0.000 claims description 6
- 230000032258 transport Effects 0.000 description 88
- 238000012545 processing Methods 0.000 description 17
- 239000000725 suspension Substances 0.000 description 16
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 239000011368 organic material Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000000149 penetrating effect Effects 0.000 description 8
- 238000005339 levitation Methods 0.000 description 7
- 239000011575 calcium Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000000696 magnetic material Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120077361A KR20140010303A (ko) | 2012-07-16 | 2012-07-16 | 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201404901A true TW201404901A (zh) | 2014-02-01 |
Family
ID=48613510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102114045A TW201404901A (zh) | 2012-07-16 | 2013-04-19 | 有機層沉積設備、使用其製造有機發光顯示裝置之方法、以及以此方法製造之有機發光顯示裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140014921A1 (enExample) |
| EP (1) | EP2688121A3 (enExample) |
| JP (1) | JP2014019954A (enExample) |
| KR (1) | KR20140010303A (enExample) |
| CN (1) | CN103540896A (enExample) |
| TW (1) | TW201404901A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI586019B (zh) * | 2015-01-14 | 2017-06-01 | 史那精密股份有限公司 | 有機發光元件製造用群集型沉積裝置 |
| US11732345B2 (en) | 2020-06-04 | 2023-08-22 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
Families Citing this family (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5328726B2 (ja) | 2009-08-25 | 2013-10-30 | 三星ディスプレイ株式會社 | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 |
| JP5677785B2 (ja) | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
| US8876975B2 (en) * | 2009-10-19 | 2014-11-04 | Samsung Display Co., Ltd. | Thin film deposition apparatus |
| KR101084184B1 (ko) | 2010-01-11 | 2011-11-17 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| KR101193186B1 (ko) | 2010-02-01 | 2012-10-19 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101156441B1 (ko) | 2010-03-11 | 2012-06-18 | 삼성모바일디스플레이주식회사 | 박막 증착 장치 |
| US8894458B2 (en) | 2010-04-28 | 2014-11-25 | Samsung Display Co., Ltd. | Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method |
| KR101223723B1 (ko) | 2010-07-07 | 2013-01-18 | 삼성디스플레이 주식회사 | 박막 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR101723506B1 (ko) | 2010-10-22 | 2017-04-19 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101738531B1 (ko) | 2010-10-22 | 2017-05-23 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| KR20120045865A (ko) | 2010-11-01 | 2012-05-09 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
| KR20120065789A (ko) | 2010-12-13 | 2012-06-21 | 삼성모바일디스플레이주식회사 | 유기층 증착 장치 |
| KR101760897B1 (ko) | 2011-01-12 | 2017-07-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 구비하는 유기막 증착 장치 |
| KR101840654B1 (ko) | 2011-05-25 | 2018-03-22 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101852517B1 (ko) | 2011-05-25 | 2018-04-27 | 삼성디스플레이 주식회사 | 유기층 증착 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
| KR101857249B1 (ko) | 2011-05-27 | 2018-05-14 | 삼성디스플레이 주식회사 | 패터닝 슬릿 시트 어셈블리, 유기막 증착 장치, 유기 발광 표시장치제조 방법 및 유기 발광 표시 장치 |
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| KR101959975B1 (ko) * | 2012-07-10 | 2019-07-16 | 삼성디스플레이 주식회사 | 유기층 증착 장치, 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 및 이에 따라 제조된 유기 발광 디스플레이 장치 |
| US9496524B2 (en) * | 2012-07-10 | 2016-11-15 | Samsung Display Co., Ltd. | Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus using the same, and organic light-emitting display apparatus manufactured using the method |
| KR101938365B1 (ko) * | 2012-07-31 | 2019-04-12 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착량 측정 방법 |
| KR102096049B1 (ko) * | 2013-05-03 | 2020-04-02 | 삼성디스플레이 주식회사 | 증착장치, 이를 이용한 유기발광 디스플레이 장치 제조 방법 및 유기발광 디스플레이 장치 |
| KR102369314B1 (ko) * | 2015-06-16 | 2022-03-04 | 삼성디스플레이 주식회사 | 증착 장치 |
| KR102376728B1 (ko) * | 2015-07-07 | 2022-03-21 | 삼성디스플레이 주식회사 | 증착원, 이를 포함하는 증착 장치 및 증착 장치를 이용한 표시 장치의 제조 방법 |
| KR102391346B1 (ko) | 2015-08-04 | 2022-04-28 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조방법 |
| KR20170049716A (ko) * | 2015-10-27 | 2017-05-11 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치, 유기층 증착 장치 및 이를 이용한 유기 발광 표시 장치의 제조방법 |
| CN105483633B (zh) * | 2016-02-01 | 2017-12-08 | 京东方科技集团股份有限公司 | 一种磁控溅射装置 |
| JP6605759B2 (ja) * | 2016-05-18 | 2019-11-13 | アプライド マテリアルズ インコーポレイテッド | 堆積源を搬送するための装置及び方法 |
| EP3366804B1 (en) * | 2017-02-22 | 2022-05-11 | Satisloh AG | Box coating apparatus for vacuum coating of substrates, in particular spectacle lenses |
| CN110234792A (zh) * | 2017-03-17 | 2019-09-13 | 应用材料公司 | 操作真空处理系统的方法 |
| US10540339B2 (en) * | 2017-05-19 | 2020-01-21 | Microsoft Technology Licensing, Llc | Matching a resource with a user for a predicted user need |
| JP2019534938A (ja) * | 2017-09-26 | 2019-12-05 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 材料堆積装置、真空堆積システム、及び真空堆積を行う方法 |
| US20200087777A1 (en) * | 2017-09-28 | 2020-03-19 | Sharp Kabushiki Kaisha | Vapor deposition source and vapor deposition apparatus, and method for manufacturing vapor deposition film |
| KR102020767B1 (ko) * | 2017-12-29 | 2019-09-11 | 주식회사 에스에프에이 | 기판 증착장치 |
| KR102020768B1 (ko) * | 2017-12-29 | 2019-09-11 | 주식회사 에스에프에이 | 기판 증착장치 |
| WO2019187162A1 (ja) * | 2018-03-30 | 2019-10-03 | シャープ株式会社 | 表示デバイスの製造方法および蒸着装置 |
| KR20200002242A (ko) * | 2018-06-29 | 2020-01-08 | 캐논 톡키 가부시키가이샤 | 성막 장치, 유기 디바이스의 제조 장치, 및 유기 디바이스의 제조 방법 |
| KR102641512B1 (ko) | 2018-07-20 | 2024-02-28 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
| JP6586216B1 (ja) * | 2018-11-22 | 2019-10-02 | 長州産業株式会社 | 蒸着装置及び蒸着方法 |
| KR102257008B1 (ko) * | 2019-01-11 | 2021-05-26 | 캐논 톡키 가부시키가이샤 | 성막 장치, 성막 방법 및 전자 디바이스 제조방법 |
| KR102179271B1 (ko) * | 2019-01-11 | 2020-11-16 | 캐논 톡키 가부시키가이샤 | 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법 |
| KR102700940B1 (ko) * | 2019-02-19 | 2024-09-02 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
| KR102282068B1 (ko) * | 2019-12-26 | 2021-07-27 | 주식회사 에스에프에이 | 기판 증착장치 |
| JP7522837B2 (ja) | 2020-01-22 | 2024-07-25 | アプライド マテリアルズ インコーポレイテッド | Ｏｌｅｄ層の厚さ及びドーパント濃度のインライン監視 |
| US11889740B2 (en) * | 2020-01-22 | 2024-01-30 | Applied Materials, Inc. | In-line monitoring of OLED layer thickness and dopant concentration |
| JP7509810B2 (ja) | 2022-02-24 | 2024-07-02 | キヤノントッキ株式会社 | 成膜装置 |
| KR102765576B1 (ko) * | 2024-06-14 | 2025-02-11 | (주)펀솔루션테크놀러지 | 듀얼 리니어 소스를 구비한 증착장치 및 이를 이용한 기판 증착방법 |
| KR102765571B1 (ko) * | 2024-06-14 | 2025-02-11 | (주)펀솔루션테크놀러지 | 오픈 에어리어를 조절하는 기판 증착장치 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3747558A (en) * | 1972-11-03 | 1973-07-24 | Us Air Force | Cross-mounted mask changer with thickness monitoring |
| JP2002146516A (ja) * | 2000-11-07 | 2002-05-22 | Sony Corp | 有機薄膜の蒸着方法 |
| US20030010288A1 (en) * | 2001-02-08 | 2003-01-16 | Shunpei Yamazaki | Film formation apparatus and film formation method |
| JP4315420B2 (ja) * | 2003-04-18 | 2009-08-19 | キヤノン株式会社 | 露光装置及び露光方法 |
| JP2005126821A (ja) * | 2003-09-30 | 2005-05-19 | Fuji Photo Film Co Ltd | 真空蒸着装置および真空蒸着の前処理方法 |
| JP2006016660A (ja) * | 2004-07-01 | 2006-01-19 | Showa Shinku:Kk | 有機薄膜形成装置および方法 |
| EP1717339A2 (de) * | 2005-04-20 | 2006-11-02 | Applied Films GmbH & Co. KG | Kontinuierliche Beschichtungsanlage |
| WO2007099929A1 (ja) * | 2006-02-28 | 2007-09-07 | Ulvac, Inc. | 有機薄膜蒸着方法及び有機薄膜蒸着装置 |
| KR101097311B1 (ko) * | 2009-06-24 | 2011-12-21 | 삼성모바일디스플레이주식회사 | 유기 발광 디스플레이 장치 및 이를 제조하기 위한 유기막 증착 장치 |
| JP5677785B2 (ja) * | 2009-08-27 | 2015-02-25 | 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． | 薄膜蒸着装置及びこれを利用した有機発光表示装置の製造方法 |
| EP2479311B1 (en) * | 2009-09-15 | 2017-04-05 | Sharp Kabushiki Kaisha | Vapor deposition method |
| CN103189542B (zh) * | 2010-10-29 | 2014-12-03 | 夏普株式会社 | 蒸镀方法、蒸镀装置和有机el显示装置 |
-
2012
- 2012-07-16 KR KR1020120077361A patent/KR20140010303A/ko not_active Withdrawn
-
2013
- 2013-03-11 US US13/794,743 patent/US20140014921A1/en not_active Abandoned
- 2013-04-19 TW TW102114045A patent/TW201404901A/zh unknown
- 2013-06-14 EP EP13172155.7A patent/EP2688121A3/en not_active Withdrawn
- 2013-07-12 JP JP2013146915A patent/JP2014019954A/ja active Pending
- 2013-07-15 CN CN201310301733.4A patent/CN103540896A/zh active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI586019B (zh) * | 2015-01-14 | 2017-06-01 | 史那精密股份有限公司 | 有機發光元件製造用群集型沉積裝置 |
| US11732345B2 (en) | 2020-06-04 | 2023-08-22 | Applied Materials, Inc. | Vapor deposition apparatus and method for coating a substrate in a vacuum chamber |
| TWI821677B (zh) * | 2020-06-04 | 2023-11-11 | 美商應用材料股份有限公司 | 氣相沉積設備及在真空腔室中塗覆基板的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2014019954A (ja) | 2014-02-03 |
| KR20140010303A (ko) | 2014-01-24 |
| EP2688121A2 (en) | 2014-01-22 |
| CN103540896A (zh) | 2014-01-29 |
| US20140014921A1 (en) | 2014-01-16 |
| EP2688121A3 (en) | 2016-02-17 |
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